WO2019198343A1 - Double-sided polishing device for workpiece - Google Patents

Double-sided polishing device for workpiece Download PDF

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Publication number
WO2019198343A1
WO2019198343A1 PCT/JP2019/005924 JP2019005924W WO2019198343A1 WO 2019198343 A1 WO2019198343 A1 WO 2019198343A1 JP 2019005924 W JP2019005924 W JP 2019005924W WO 2019198343 A1 WO2019198343 A1 WO 2019198343A1
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Prior art keywords
surface plate
double
hole
workpiece
thickness
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PCT/JP2019/005924
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French (fr)
Japanese (ja)
Inventor
真美 久保田
啓一 高梨
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株式会社Sumco
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Publication of WO2019198343A1 publication Critical patent/WO2019198343A1/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
    • Y02T10/00—Road transport of goods or passengers
    • Y02T10/10—Internal combustion engine [ICE] based vehicles
    • Y02T10/40—Engine management systems

Definitions

  • the present invention relates to a double-side polishing apparatus for workpieces.
  • an upper surface plate 91 (or lower surface plate) is provided with a through hole 92, and a measurement mechanism (not shown) is used to remove the through hole 92.
  • a double-side polishing apparatus 100 capable of measuring the thickness of the wafer W in real time during polishing is described.
  • the polishing surface of the upper and lower surface plates is provided with a polishing pad 94 having a hole 93 having a diameter d 3 larger than the diameter d 1 of the through hole 92 at a position corresponding to the through hole 92, and the through hole 92.
  • a window material 95 having a diameter d2 larger than the diameter d1 of the polishing pad 94 and smaller than the diameter d3 of the hole 93 of the polishing pad 94 and having a thickness smaller than that of the polishing pad 94 is provided.
  • the window material 95 is fixed to the upper surface plate 91 (or the lower surface plate) by an adhesive layer 96.
  • the polishing slurry jumps and contacts the adhesive layer 96 during polishing, and the adhesive layer 96 may elute into the polishing slurry and the polishing slurry may flow into the through hole 92. .
  • the polishing slurry flows into the through-hole 92, the upper surface of the window member 95 becomes cloudy and the thickness measurement accuracy of the wafer W deteriorates.
  • the wafer W cannot be polished on both sides while accurately measuring the thickness of the wafer W over a long period of time.
  • the present invention is intended to solve the above-described problems, and an object of the present invention is to perform a double-side polishing of a workpiece while accurately measuring the thickness of the workpiece over a longer period of time than in the past.
  • An object of the present invention is to provide a double-side polishing apparatus.
  • a rotating surface plate having an upper surface plate and a lower surface plate, a sun gear provided at a central portion of the rotating surface plate, an internal gear provided at an outer peripheral portion of the rotating surface plate, and the upper surface plate
  • a workpiece double-side polishing apparatus comprising a carrier plate provided between the lower surface plate and one or more holding holes for holding the workpiece,
  • the upper surface plate or the lower surface plate is provided with one or more through holes penetrating from the upper surface to the lower surface of the upper surface plate or the lower surface plate,
  • the polishing pad is provided with a hole at a position corresponding to the through hole,
  • a work thickness measuring instrument capable of measuring the thickness of the work through the one or more through holes and holes during double-side polishing of the work;
  • a solid window material is inserted into each of the one or more through holes, and the window material includes a cylindrical portion and a flange portion having a diameter larger than the diameter of the through hole.
  • the cylindrical portion has a protruding portion that has a length larger than the thickness of the upper surface plate or the lower surface plate and protrudes from the through hole, and the protruding portion is fixed to the upper surface plate by a fixing member.
  • the double-side polishing apparatus according to [1] which is fixed to the upper surface of the lower surface plate or the lower surface of the lower surface plate.
  • a recess is provided at the bottom of the side wall of the upper surface plate that defines the through hole, or at the top of the side wall of the lower surface plate that defines the through hole, and the flange portion of the window member is formed in the recess.
  • FIG. 2 shows an example of a double-side polishing apparatus for workpieces according to the present invention.
  • the double-side polishing apparatus 1 shown in FIG. 1 includes a rotating surface plate 4 having an upper surface plate 2 and a lower surface plate 3 opposite to the upper surface plate 2, a sun gear 5 provided at the center of rotation of the rotating surface plate 4, And an internal gear 6 provided in an annular shape on the outer periphery.
  • a polishing pad 7 is affixed to the opposing surfaces of the upper and lower rotating surface plates 4, that is, the lower surface that is the polishing surface of the upper surface plate 2 and the upper surface that is the polishing surface of the lower surface plate 3. Yes.
  • the apparatus 1 includes a carrier plate 9 disposed between the upper surface plate 2 and the lower surface plate 3, and this carrier plate 9 holds one workpiece W.
  • the above holding hole 8 is provided.
  • the apparatus 1 includes only one carrier plate 9, but may include a plurality of carrier plates 9.
  • a workpiece (wafer in this embodiment) W is held in the holding hole 8.
  • the device 1 can rotate the sun gear 5 and the internal gear 6 to cause the carrier plate 9 to revolve and rotate to cause planetary motion. That is, while supplying the polishing slurry, the carrier plate 9 is caused to make a planetary movement, and at the same time, the upper surface plate 2 and the lower surface plate 3 are rotated relative to the carrier plate 9 to be stuck to the upper and lower rotating surface plates 4. Both surfaces of the wafer W can be simultaneously polished by sliding the polishing pad 7 and both surfaces of the wafer W held in the holding holes 8 of the carrier plate 9.
  • the upper surface plate 2 is provided with one or more through holes 10 penetrating from the upper surface of the upper surface plate 2 to the lower surface that is the polishing surface.
  • one through hole 10 is disposed at a position passing through the vicinity of the center of the wafer W.
  • the through hole 10 is provided in the upper surface plate 2, but may be provided in the lower surface plate 3, and one or more through holes 10 are provided in either the upper surface plate 2 or the lower surface plate 3.
  • one hole 10 is provided, but a plurality of holes 10 may be arranged on the same circumference of the upper surface plate 2.
  • the polishing pad 7 affixed to the upper surface plate 2 also has a hole 11 penetrating at a position corresponding to the through hole 10. It is the state which penetrated to the lower surface.
  • a workpiece thickness measuring device 12 is provided above the through hole 10, and the thickness of the wafer W can be measured in real time through the through hole 10 and the hole 11 during double-side polishing of the wafer W. It is.
  • the workpiece thickness measuring instrument 12 can be, for example, a variable wavelength infrared laser measuring instrument. According to such a measuring instrument, the thickness of the wafer W can be measured by evaluating the interference between the reflected light on the front surface of the wafer W and the reflected light on the back surface.
  • a solid window member 13 is inserted into each of the through holes 10.
  • the window member 13 includes a cylindrical portion 14 and a flange portion 15 having a diameter larger than the diameter of the through hole 10, and the cylindrical portion 14 and the flange portion 15 are integrally formed.
  • an annular recess 14b is provided on the side surface 14a of the cylindrical portion 14, and the cylindrical portion 14 is inserted into the through hole 10 from the polishing pad 7 side in a state where the O-ring 16 is disposed in the annular recess 14b.
  • the space between the through hole 10 and the cylindrical portion 14 is sealed by the O-ring 16.
  • the window material 13 is fixed to the upper surface plate 2 (or the lower surface plate 3) by an adhesive layer (for example, double-sided tape).
  • the cylindrical portion 14 of the window member 13 has a protruding portion 14 d that has a length larger than the thickness of the upper surface plate 2 (or the lower surface plate 3) and protrudes from the through hole 10.
  • the projecting portion 14 d may be fixed to the upper surface 2 a of the upper surface plate 2 (the lower surface of the lower surface plate 3) by a fixing member (for example, a nut) 18.
  • a fixing member for example, a nut
  • a recess 2 b is provided at the bottom of the side wall of the upper surface plate 2 (or the top of the side wall of the lower surface plate) that defines the through hole 10. .
  • the lower surface 15b of the upper surface plate 2 and the lower surface 2c of the upper surface plate 2 are made the same as the sum of the depth of the concave portion 2b of the upper surface plate 2 and the thickness of the flange portion 15 and the thickness of the adhesive layer 17. 3) is preferably arranged on the same plane.
  • the window material 13 can be arrange
  • polishing can be performed favorably.
  • the polishing pad 7 covers the outer peripheral portion 15 c of the flange portion 15.
  • the gap between the polishing pad 7 and the outer peripheral portion of the lower surface 15 b of the flange portion 15 is reduced from the hole 11 of the polishing pad 7 as compared with the configuration shown in FIG. 4. It is necessary to pass through, and the inflow of the polishing slurry can be further suppressed.
  • the thickness of the silicon wafer (diameter: 300 mm, conductivity type: p ⁇ , p ++ ) was measured using the double-side polishing apparatus 100 described in Patent Document 1 shown in FIG. Specifically, the upper surface plate 2 was spaced apart from the silicon wafer W and disposed above, and the wafer thickness measuring device 12 was disposed at a position where the distance from the silicon wafer surface was about 1 m.
  • the near-infrared light (wavelength: 1310 nm) is irradiated from the wafer thickness measuring device 12 to the surface of the silicon wafer W, the reflection intensity due to the interference between the front surface reflected light and the back surface reflected light of the silicon wafer W, and the thickness of the silicon wafer W.
  • the present invention is useful in the semiconductor wafer manufacturing industry because the workpiece can be polished on both sides while accurately measuring the thickness of the workpiece over a longer period of time than before.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)

Abstract

Provided is a double-sided polishing device for a workpiece that can perform double-sided polishing of the workpiece while maintaining accuracy, for a longer period of time than conventional devices, in measuring the thickness of the workpiece. In this double-sided polishing device 1, an upper surface plate 2 or a lower surface plate is provided with one or more through-holes 10 that penetrate from the top surface to the bottom surface of the upper surface plate 2 or the lower surface plate. A polishing pad 7 is provided with a hole 11 at a position corresponding to the through-hole 10. The double-sided polishing device 1 is further provided with a workpiece thickness measuring device that measures the thickness of a workpiece W while engaging in double-sided polishing of the workpiece W. The present invention is characterized in that: each of the one or more through-holes 10 has inserted therein a solid window member 13; the window member 13 comprises a cylindrical section 14 and a flange section 15 that has a larger diameter than the through-hole 10; a ring-shaped recess 14b is provided in a side surface 14a of the cylindrical section 14; and, in a state where an O-ring 16 is disposed in the ring-shaped recess 14b, the cylindrical section 14 is inserted into the through-hole 10 from the polishing pad 7 side.

Description

ワークの両面研磨装置Double-side polishing machine for workpieces
　本発明は、ワークの両面研磨装置に関する。 The present invention relates to a double-side polishing apparatus for workpieces.
　研磨に供するワークの典型例であるシリコンウェーハなどの半導体ウェーハの製造において、より高精度なウェーハの平坦度品質や表面粗さ品質を得るために、ウェーハの表裏面を同時に研磨する両面研磨工程が一般的に採用されている。 In the manufacture of semiconductor wafers such as silicon wafers, which are typical examples of workpieces used for polishing, there is a double-side polishing process that simultaneously polishes the front and back surfaces of the wafer in order to obtain higher-precision wafer flatness quality and surface roughness quality. Generally adopted.
　特に近年、半導体素子の微細化と半導体ウェーハの大口径化により、露光時における半導体ウェーハの平坦度要求が厳しくなってきているという背景から、適切なタイミングで研磨を終了させることが重要である。 In particular, it is important to finish the polishing at an appropriate timing because the demand for flatness of the semiconductor wafer at the time of exposure has become severe due to the miniaturization of semiconductor elements and the increase in the diameter of semiconductor wafers in recent years.
　こうした背景の下、特許文献１には、図１に示すように、上定盤９１（または下定盤）に貫通孔９２が設けられ、測定機構（図示せず）を用いて、貫通孔９２からウェーハＷの厚みを研磨中にリアルタイムで測定することができる両面研磨装置１００が記載されている。 Under such a background, as shown in FIG. 1, in Patent Document 1, an upper surface plate 91 (or lower surface plate) is provided with a through hole 92, and a measurement mechanism (not shown) is used to remove the through hole 92. A double-side polishing apparatus 100 capable of measuring the thickness of the wafer W in real time during polishing is described.
　上記両面研磨装置１００においては、上下定盤の研磨面には、貫通孔９２に対応する位置に、貫通孔９２の径ｄ１より大きな径ｄ３の穴９３の開いた研磨パッド９４と、貫通孔９２の径ｄ１より大きく研磨布９４の穴９３の径ｄ３より小さな径ｄ２を有し、研磨布９４より厚みが小さい窓材９５とが設けられている。窓材９５は、接着層９６によって上定盤９１（または下定盤）に固定されている。 In the double-side polishing apparatus 100, the polishing surface of the upper and lower surface plates is provided with a polishing pad 94 having a hole 93 having a diameter d 3 larger than the diameter d 1 of the through hole 92 at a position corresponding to the through hole 92, and the through hole 92. A window material 95 having a diameter d2 larger than the diameter d1 of the polishing pad 94 and smaller than the diameter d3 of the hole 93 of the polishing pad 94 and having a thickness smaller than that of the polishing pad 94 is provided. The window material 95 is fixed to the upper surface plate 91 (or the lower surface plate) by an adhesive layer 96.
特許第４６５４２７５号公報Japanese Patent No. 4654275
　しかしながら、特許文献１の両面研磨装置１００では、研磨中に研磨スラリーが飛び跳ねて接着層９６に接触し、接着層９６が研磨スラリーに溶出して、研磨スラリーが貫通孔９２に流入するおそれがある。貫通孔９２に研磨スラリーが流入すると、窓材９５の上面が曇ってウェーハＷの厚み測定の精度が悪化する。このように、研磨スラリーの貫通孔９２への流入によって、ウェーハＷの厚みを長期に亘って精度よく測定しつつ、ウェーハＷの両面研磨を行うことができなくなる。 However, in the double-side polishing apparatus 100 of Patent Document 1, the polishing slurry jumps and contacts the adhesive layer 96 during polishing, and the adhesive layer 96 may elute into the polishing slurry and the polishing slurry may flow into the through hole 92. . When the polishing slurry flows into the through-hole 92, the upper surface of the window member 95 becomes cloudy and the thickness measurement accuracy of the wafer W deteriorates. Thus, due to the polishing slurry flowing into the through-holes 92, the wafer W cannot be polished on both sides while accurately measuring the thickness of the wafer W over a long period of time.
　本発明は、上記の問題を解決しようとするものであり、その目的とするところは、ワークの厚みを従来よりも長期に亘って精度よく測定しつつ、ワークの両面研磨を行うことができるワークの両面研磨装置を提供することにある。 The present invention is intended to solve the above-described problems, and an object of the present invention is to perform a double-side polishing of a workpiece while accurately measuring the thickness of the workpiece over a longer period of time than in the past. An object of the present invention is to provide a double-side polishing apparatus.
　上記課題を解決する本発明の要旨構成は以下の通りである。
［１］上定盤および下定盤を有する回転定盤と、該回転定盤の中心部に設けられたサンギアと、前記回転定盤の外周部に設けられたインターナルギアと、前記上定盤と前記下定盤との間に設けられ、ワークを保持する１つ以上の保持孔が設けられたキャリアプレートとを備えるワークの両面研磨装置において、
　前記上定盤または前記下定盤には、該上定盤または該下定盤の上面から下面まで貫通する１以上の貫通孔が設けられ、
　前記研磨パッドには、前記貫通孔に対応する位置に穴が設けられ、
　前記ワークの両面研磨中に、前記ワークの厚みを前記１つ以上の貫通孔および穴を介して計測することが可能なワーク厚み計測器をさらに備え、
　前記１以上の貫通孔の各々には、中実の窓材が挿入されており、該窓材は、筒部と前記貫通孔の径より大きい径を有するフランジ部とからなり、前記筒部の側面には環状の凹部が設けられ、該環状の凹部にＯリングが配置された状態で前記筒部が前記研磨パッド側から前記貫通孔に挿入されていることを特徴とする両面研磨装置。 The gist configuration of the present invention for solving the above-described problems is as follows.
[1] A rotating surface plate having an upper surface plate and a lower surface plate, a sun gear provided at a central portion of the rotating surface plate, an internal gear provided at an outer peripheral portion of the rotating surface plate, and the upper surface plate In a workpiece double-side polishing apparatus comprising a carrier plate provided between the lower surface plate and one or more holding holes for holding the workpiece,
The upper surface plate or the lower surface plate is provided with one or more through holes penetrating from the upper surface to the lower surface of the upper surface plate or the lower surface plate,
The polishing pad is provided with a hole at a position corresponding to the through hole,
A work thickness measuring instrument capable of measuring the thickness of the work through the one or more through holes and holes during double-side polishing of the work;
A solid window material is inserted into each of the one or more through holes, and the window material includes a cylindrical portion and a flange portion having a diameter larger than the diameter of the through hole. A double-side polishing apparatus, wherein an annular recess is provided on a side surface, and the cylindrical portion is inserted into the through-hole from the polishing pad side with an O-ring disposed in the annular recess.
［２］前記筒部は、前記上定盤または前記下定盤の厚みよりも大きな長さを有して前記貫通孔から突出した突出部を有し、該突出部が固定部材によって前記上定盤の上面または前記下定盤の下面に固定されている、前記［１］に記載の両面研磨装置。 [2] The cylindrical portion has a protruding portion that has a length larger than the thickness of the upper surface plate or the lower surface plate and protrudes from the through hole, and the protruding portion is fixed to the upper surface plate by a fixing member. The double-side polishing apparatus according to [1], which is fixed to the upper surface of the lower surface plate or the lower surface of the lower surface plate.
［３］前記貫通孔を区画する前記上定盤の側壁の底部、または前記貫通孔を区画する前記下定盤の側壁の頂部に凹部が設けられており、前記窓材のフランジ部が前記凹部に嵌合されている、前記［１］または［２］に記載の両面研磨装置。 [3] A recess is provided at the bottom of the side wall of the upper surface plate that defines the through hole, or at the top of the side wall of the lower surface plate that defines the through hole, and the flange portion of the window member is formed in the recess. The double-side polishing apparatus according to [1] or [2], which is fitted.
［４］前記研磨パッドが前記フランジ部の外周部を覆っている、前記［１］～［３］のいずれか一項に記載の両面研磨装置。 [4] The double-side polishing apparatus according to any one of [1] to [3], wherein the polishing pad covers an outer peripheral portion of the flange portion.
　本発明によれば、ワークの厚みを従来よりも長期に亘って精度よく測定しつつ、ワークの両面研磨を行うことができる。 According to the present invention, it is possible to perform double-side polishing of a workpiece while accurately measuring the thickness of the workpiece over a longer period than in the past.
従来のワークの両面研磨装置の要部を示す図である。It is a figure which shows the principal part of the conventional double-side polish apparatus of a workpiece | work. 本発明によるワークの両面研磨装置の一例を示す図である。It is a figure which shows an example of the double-side polish apparatus of the workpiece | work by this invention. 図２に示した両面研磨装置の要部を示す図である。It is a figure which shows the principal part of the double-side polish apparatus shown in FIG. 本発明によるワークの両面研磨装置の別の例の要部を示す図である。It is a figure which shows the principal part of another example of the double-side polish apparatus of the workpiece | work by this invention. 本発明によるワークの両面研磨装置の好適な例の要部を示す図である。It is a figure which shows the principal part of the suitable example of the double-side polish apparatus of the workpiece | work by this invention. 本発明によるワークの両面研磨装置の別の好適な例の要部を示す図である。It is a figure which shows the principal part of another suitable example of the double-side polish apparatus of the workpiece | work by this invention.
　以下、図面を参照して本発明の実施形態について説明する。図２は、本発明によるワークの両面研磨装置の一例を示している。この図に示す両面研磨装置１は、上定盤２およびそれに対向する下定盤３を有する回転定盤４と、回転定盤４の回転中心部に設けられたサンギア５と、回転定盤４の外周部に円環状に設けられたインターナルギア６とを備えている。図２に示すように、上下の回転定盤４の対向面、すなわち、上定盤２の研磨面である下面および下定盤３の研磨面である上面には、それぞれ研磨パッド７が貼付されている。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 2 shows an example of a double-side polishing apparatus for workpieces according to the present invention. The double-side polishing apparatus 1 shown in FIG. 1 includes a rotating surface plate 4 having an upper surface plate 2 and a lower surface plate 3 opposite to the upper surface plate 2, a sun gear 5 provided at the center of rotation of the rotating surface plate 4, And an internal gear 6 provided in an annular shape on the outer periphery. As shown in FIG. 2, a polishing pad 7 is affixed to the opposing surfaces of the upper and lower rotating surface plates 4, that is, the lower surface that is the polishing surface of the upper surface plate 2 and the upper surface that is the polishing surface of the lower surface plate 3. Yes.
　また、図２に示すように、この装置１は、上定盤２と下定盤３との間に配置されたキャリアプレート９を備えており、このキャリアプレート９は、ワークＷを保持する１つ以上の保持孔８を有している。なお、図示例では、この装置１は、キャリアプレート９を１つのみ有しているが、複数のキャリアプレート９を有していてもよい。図示例では、保持孔８にワーク（本実施形態ではウェーハ）Ｗが保持されている。 As shown in FIG. 2, the apparatus 1 includes a carrier plate 9 disposed between the upper surface plate 2 and the lower surface plate 3, and this carrier plate 9 holds one workpiece W. The above holding hole 8 is provided. In the illustrated example, the apparatus 1 includes only one carrier plate 9, but may include a plurality of carrier plates 9. In the illustrated example, a workpiece (wafer in this embodiment) W is held in the holding hole 8.
　ここで、この装置１は、サンギア５とインターナルギア６とを回転させることにより、キャリアプレート９を公転および自転させて遊星運動させることができる。すなわち、研磨スラリーを供給しながら、キャリアプレート９を遊星運動させ、同時に上定盤２および下定盤３をキャリアプレート９に対して相対的に回転させることにより、上下の回転定盤４に貼付した研磨パッド７とキャリアプレート９の保持孔８に保持したウェーハＷの両面とを摺動させてウェーハＷの両面を同時に研磨することができる。 Here, the device 1 can rotate the sun gear 5 and the internal gear 6 to cause the carrier plate 9 to revolve and rotate to cause planetary motion. That is, while supplying the polishing slurry, the carrier plate 9 is caused to make a planetary movement, and at the same time, the upper surface plate 2 and the lower surface plate 3 are rotated relative to the carrier plate 9 to be stuck to the upper and lower rotating surface plates 4. Both surfaces of the wafer W can be simultaneously polished by sliding the polishing pad 7 and both surfaces of the wafer W held in the holding holes 8 of the carrier plate 9.
　さらに、図２に示すように、本実施形態の装置１では、上定盤２は、該上定盤２の上面から研磨面である下面まで貫通した１つ以上の貫通孔１０が設けられている。図示例では、貫通孔１０は、ウェーハＷの中心付近を通過する位置に１つ配置されている。なお、この例では、貫通孔１０は、上定盤２に設けているが、下定盤３に設けてもよく、上定盤２および下定盤３のいずれかに貫通孔１０を１つ以上設ければよい。また、図２に示す例では、穴１０を１つ設けているが、上定盤２の同一円周上に複数配置してもよい。ここで、図２に示すように、上定盤２に貼付した研磨パッド７にも、貫通孔１０に対応する位置に穴１１が貫通しており、上定盤２の上面から研磨パッド７の下面まで貫通した状態である。 Further, as shown in FIG. 2, in the apparatus 1 of the present embodiment, the upper surface plate 2 is provided with one or more through holes 10 penetrating from the upper surface of the upper surface plate 2 to the lower surface that is the polishing surface. Yes. In the illustrated example, one through hole 10 is disposed at a position passing through the vicinity of the center of the wafer W. In this example, the through hole 10 is provided in the upper surface plate 2, but may be provided in the lower surface plate 3, and one or more through holes 10 are provided in either the upper surface plate 2 or the lower surface plate 3. Just do it. In the example shown in FIG. 2, one hole 10 is provided, but a plurality of holes 10 may be arranged on the same circumference of the upper surface plate 2. Here, as shown in FIG. 2, the polishing pad 7 affixed to the upper surface plate 2 also has a hole 11 penetrating at a position corresponding to the through hole 10. It is the state which penetrated to the lower surface.
　また、この貫通孔１０の上方には、ワーク厚み計測器１２を備えており、ウェーハＷの両面研磨中に、ウェーハＷの厚みを貫通孔１０および穴１１を介してリアルタイムに計測することが可能である。なお、ワーク厚み計測器１２は、例えば、波長可変型の赤外線レーザ計測器とすることができる。このような計測器によれば、ウェーハＷの表面での反射光と裏面での反射光との干渉を評価して、ウェーハＷの厚みを計測することができる。 In addition, a workpiece thickness measuring device 12 is provided above the through hole 10, and the thickness of the wafer W can be measured in real time through the through hole 10 and the hole 11 during double-side polishing of the wafer W. It is. The workpiece thickness measuring instrument 12 can be, for example, a variable wavelength infrared laser measuring instrument. According to such a measuring instrument, the thickness of the wafer W can be measured by evaluating the interference between the reflected light on the front surface of the wafer W and the reflected light on the back surface.
　そして、本発明の両面研磨装置１においては、上記貫通孔１０の各々には、中実の窓材１３が挿入されている。この窓材１３は、図３に示すように、筒部１４と貫通孔１０の径より大きい径を有するフランジ部１５とからなり、筒部１４とフランジ部１５とは一体に形成されている。また、筒部１４の側面１４ａには環状の凹部１４ｂが設けられ、この環状の凹部１４ｂにＯリング１６が配置された状態で、筒部１４が研磨パッド７側から貫通孔１０に挿入されており、Ｏリング１６によって貫通孔１０と筒部１４との間がシールされている。窓材１３は、接着層（例えば、両面テープ）１７によって上定盤２（または下定盤３）に固定されている。 In the double-side polishing apparatus 1 of the present invention, a solid window member 13 is inserted into each of the through holes 10. As shown in FIG. 3, the window member 13 includes a cylindrical portion 14 and a flange portion 15 having a diameter larger than the diameter of the through hole 10, and the cylindrical portion 14 and the flange portion 15 are integrally formed. Further, an annular recess 14b is provided on the side surface 14a of the cylindrical portion 14, and the cylindrical portion 14 is inserted into the through hole 10 from the polishing pad 7 side in a state where the O-ring 16 is disposed in the annular recess 14b. The space between the through hole 10 and the cylindrical portion 14 is sealed by the O-ring 16. The window material 13 is fixed to the upper surface plate 2 (or the lower surface plate 3) by an adhesive layer (for example, double-sided tape).
　このような窓材１３によって、仮に、接着層１７が溶出して研磨スラリーが貫通孔１０に流入したとしても、貫通孔１０には窓材１３の筒部１４が挿入されているため、研磨スラリーが貫通孔１０に流入するためには、筒部１４の側面１４ａと上定盤２（または下定盤３）との間を上昇する必要がある。しかし、筒部１４の環状の凹部１４ｂにはＯリング１６が配置されているため、研磨スラリーがＯリングまで到達したとしても、筒部１４の上面１４ｃまでは到達できない。 Even if the adhesive layer 17 is eluted by the window material 13 and the polishing slurry flows into the through hole 10, the cylindrical portion 14 of the window material 13 is inserted into the through hole 10. In order to flow into the through hole 10, it is necessary to ascend between the side surface 14a of the cylindrical portion 14 and the upper surface plate 2 (or the lower surface plate 3). However, since the O-ring 16 is disposed in the annular recess 14b of the cylindrical portion 14, even if the polishing slurry reaches the O-ring, it cannot reach the upper surface 14c of the cylindrical portion 14.
　こうして、研磨スラリーが貫通孔１０に流入することによってウェーハＷの厚み測定の精度が悪化するのを防止することができ、ワークＷの厚みを従来よりも長期に亘って精度よく測定しつつ、ワークＷの両面研磨を行うことができる。 In this way, it is possible to prevent the accuracy of the thickness measurement of the wafer W from deteriorating due to the polishing slurry flowing into the through-hole 10, and while measuring the thickness of the workpiece W more accurately than in the past, Double-side polishing of W can be performed.
　また、図４に示すように、窓材１３の筒部１４は、上定盤２（または下定盤３）の厚みよりも大きな長さを有して貫通孔１０から突出した突出部１４ｄを有し、突出部１４ｄが固定部材（例えば、ナット）１８によって上定盤２の上面２ａ（下定盤３の下面）に固定されていてもよい。これにより、窓材１３を上定盤２（または下定盤３）に強固に固定することができ、研磨スラリーが貫通孔１０に流入するのをさらに抑制することができる。この場合には、図３に示した窓材１３とは異なり、接着層１７は不要である。 Further, as shown in FIG. 4, the cylindrical portion 14 of the window member 13 has a protruding portion 14 d that has a length larger than the thickness of the upper surface plate 2 (or the lower surface plate 3) and protrudes from the through hole 10. The projecting portion 14 d may be fixed to the upper surface 2 a of the upper surface plate 2 (the lower surface of the lower surface plate 3) by a fixing member (for example, a nut) 18. Thereby, the window material 13 can be firmly fixed to the upper surface plate 2 (or the lower surface plate 3), and the flowing of the polishing slurry into the through hole 10 can be further suppressed. In this case, unlike the window member 13 shown in FIG. 3, the adhesive layer 17 is unnecessary.
　本発明の両面研磨装置１において、図５に示すように、貫通孔１０を区画する上定盤２の側壁の底部（または下定盤の側壁の頂部）に凹部２ｂが設けられていることが好ましい。このような構成にすると、研磨スラリーが貫通孔１０に流入するためには、図３に示した構成に比べて、フランジ部１５の側面１５ａと凹部２ｂを区画する側壁との間を経由する必要があるため、研磨スラリーの流入をさらに抑制することができる。特に、上定盤２の凹部２ｂの深さと、フランジ部１５の厚みと接着層１７の厚みとの和を同じにして、フランジ部１５の下面１５ｂと上定盤２の下面２ｃ（または下定盤３の上面）とが同一平面上に配置されるように構成されていることが好ましい。これにより、窓材１３がより安定的に配置されて、両面研磨を良好に行うことができる。 In the double-side polishing apparatus 1 of the present invention, as shown in FIG. 5, it is preferable that a recess 2 b is provided at the bottom of the side wall of the upper surface plate 2 (or the top of the side wall of the lower surface plate) that defines the through hole 10. . With such a configuration, in order for the polishing slurry to flow into the through-hole 10, it is necessary to pass between the side surface 15a of the flange portion 15 and the side wall defining the recess 2b, as compared to the configuration shown in FIG. Therefore, the inflow of the polishing slurry can be further suppressed. In particular, the lower surface 15b of the upper surface plate 2 and the lower surface 2c of the upper surface plate 2 (or the lower surface plate) are made the same as the sum of the depth of the concave portion 2b of the upper surface plate 2 and the thickness of the flange portion 15 and the thickness of the adhesive layer 17. 3) is preferably arranged on the same plane. Thereby, the window material 13 can be arrange | positioned more stably and double-sided grinding | polishing can be performed favorably.
　また、図６に示すように、研磨パッド７がフランジ部１５の外周部１５ｃを覆っていることが好ましい。これにより、研磨スラリーが貫通孔１０に流入するためには、図４に示した構成に比べて、研磨パッド７の穴１１から研磨パッド７とフランジ部１５の下面１５ｂの外周部との間を経由する必要があり、研磨スラリーの流入をさらに抑制することができる。 Further, as shown in FIG. 6, it is preferable that the polishing pad 7 covers the outer peripheral portion 15 c of the flange portion 15. Thus, in order for the polishing slurry to flow into the through-hole 10, the gap between the polishing pad 7 and the outer peripheral portion of the lower surface 15 b of the flange portion 15 is reduced from the hole 11 of the polishing pad 7 as compared with the configuration shown in FIG. 4. It is necessary to pass through, and the inflow of the polishing slurry can be further suppressed.
（従来例１）
　図１に示した、特許文献１に記載された両面研磨装置１００を用いて、シリコンウェーハ（直径：３００ｍｍ、導電型：ｐ－、ｐ＋＋）の厚みを計測した。具体的には、上定盤２をシリコンウェーハＷから離間させて上方に配置し、ウェーハ厚み計測器１２を、シリコンウェーハ表面からの距離が約１ｍとなるような位置に配置した。 (Conventional example 1)
The thickness of the silicon wafer (diameter: 300 mm, conductivity type: p − , p ++ ) was measured using the double-side polishing apparatus 100 described in Patent Document 1 shown in FIG. Specifically, the upper surface plate 2 was spaced apart from the silicon wafer W and disposed above, and the wafer thickness measuring device 12 was disposed at a position where the distance from the silicon wafer surface was about 1 m.
　ウェーハ厚み計測器１２から近赤外光（波長：１３１０ｎｍ）をシリコンウェーハＷの表面に照射して、シリコンウェーハＷの表面反射光と裏面反射光との干渉による反射強度と、シリコンウェーハＷの厚み分を通過した光路差情報から得られた干渉縞周期を高速フーリエ変換（ＦＦＴ）してシリコンウェーハＷの厚みを算出した。その際、厚みの測定は、シリコンウェーハＷの中心部の約１００００箇所について測定し、窓材１３としては、加工直後（すなわち、使用ライフ＝０分）のものを使用した。算出された厚みを表１に示す。 The near-infrared light (wavelength: 1310 nm) is irradiated from the wafer thickness measuring device 12 to the surface of the silicon wafer W, the reflection intensity due to the interference between the front surface reflected light and the back surface reflected light of the silicon wafer W, and the thickness of the silicon wafer W. The thickness of the silicon wafer W was calculated by fast Fourier transform (FFT) of the interference fringe period obtained from the optical path difference information that passed through the minute. At that time, the thickness was measured at about 10000 locations in the center of the silicon wafer W, and the window member 13 was used immediately after processing (that is, the life used = 0 minutes). Table 1 shows the calculated thickness.
Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000001
（従来例２）
　従来例１と同様に、シリコンウェーハＷの厚みを計測した。ただし、窓材１３としては、１００００分の両面研磨を行った後（すなわち、使用ライフ＝１００００分）のものを用いて行った。その他の条件は従来例１と全て同じである。得られた結果を表１に示す。 (Conventional example 2)
Similar to Conventional Example 1, the thickness of the silicon wafer W was measured. However, the window material 13 was used after having been subjected to double-side polishing for 10,000 minutes (that is, used life = 10000 minutes). All other conditions are the same as in Conventional Example 1. The obtained results are shown in Table 1.
（従来例３）
　従来例１と同様に、シリコンウェーハＷの厚みを計測した。ただし、窓材１３としては、４００００分の両面研磨を行った後（すなわち、使用ライフ＝４００００分）のものを用いて行った。その他の条件は従来例１と全て同じである。得られた結果を表１に示す。 (Conventional example 3)
Similar to Conventional Example 1, the thickness of the silicon wafer W was measured. However, the window material 13 was used after performing double-side polishing for 40000 minutes (that is, use life = 40000 minutes). All other conditions are the same as in Conventional Example 1. The obtained results are shown in Table 1.
（発明例１）
　従来例１と同様に、シリコンウェーハＷの厚みを計測した。ただし、図２および３に示した本発明による両面研磨装置１を用いて行った。その他の条件は従来例１と全て同じである。得られた結果を表１に示す。 (Invention Example 1)
Similar to Conventional Example 1, the thickness of the silicon wafer W was measured. However, the double-side polishing apparatus 1 according to the present invention shown in FIGS. 2 and 3 was used. All other conditions are the same as in Conventional Example 1. The obtained results are shown in Table 1.
（発明例２）
　従来例２と同様に、シリコンウェーハＷの厚みを計測した。ただし、図２および３に示した本発明による両面研磨装置１を用いて行った。その他の条件は従来例２と全て同じである。得られた結果を表１に示す。 (Invention Example 2)
Similar to Conventional Example 2, the thickness of the silicon wafer W was measured. However, the double-side polishing apparatus 1 according to the present invention shown in FIGS. 2 and 3 was used. All other conditions are the same as in Conventional Example 2. The obtained results are shown in Table 1.
（発明例３）
　従来例３と同様に、シリコンウェーハＷの厚みを計測した。ただし、図２および３に示した本発明による両面研磨装置１を用いて行った。その他の条件は従来例３と全て同じである。得られた結果を表１に示す。 (Invention Example 3)
As in Conventional Example 3, the thickness of the silicon wafer W was measured. However, the double-side polishing apparatus 1 according to the present invention shown in FIGS. 2 and 3 was used. All other conditions are the same as in Conventional Example 3. The obtained results are shown in Table 1.
＜ウェーハ厚みの評価＞
　表１から明らかなように、従来例１～３については、使用ライフ＝０分の従来例１に比べて、研磨時間が増えるにつれてウェーハの厚みの測定値が増加しているのに対して、発明例１～３については、使用ライフ＝０分の発明例１に比べて、研磨時間が増えてもウェーハの厚みの測定値がほぼ変わらないことが分かる。このように、本発明によって、ワークの厚みを従来よりも長期に亘って精度よく測定しつつ、ワークの両面研磨を行うことができることが分かる。 <Evaluation of wafer thickness>
As is apparent from Table 1, in the conventional examples 1 to 3, the measured value of the wafer thickness increases as the polishing time increases as compared to the conventional example 1 in which the use life = 0 minutes. In Invention Examples 1 to 3, it can be seen that the measured value of the thickness of the wafer is not substantially changed even when the polishing time is increased, as compared with Invention Example 1 in which the use life = 0 minutes. As described above, according to the present invention, it is understood that the double-side polishing of the workpiece can be performed while measuring the thickness of the workpiece with accuracy over a long period of time as compared with the related art.
　本発明によれば、ワークの厚みを従来よりも長期に亘って精度よく測定しつつ、ワークの両面研磨を行うことができるため、半導体ウェーハ製造業において有用である。 The present invention is useful in the semiconductor wafer manufacturing industry because the workpiece can be polished on both sides while accurately measuring the thickness of the workpiece over a longer period of time than before.
１　両面研磨装置
２　上定盤
２ａ　上面
２ｂ　凹部
２ｃ　下面
３　下定盤
４　回転定盤
５　サンギア
６　インターナルギア
７　研磨パッド
８　保持孔
９　キャリアプレート
１０　貫通孔
１１　穴
１２　ワーク厚み計測器
１３　窓材
１４　筒部
１４ａ　側面
１４ｂ　環状の凹部
１４ｃ　上面
１４ｄ　突出部
１５　フランジ部
１５ａ　側面
１５ｂ　下面
１５ｃ　外周部
１６　Ｏリング
１７　接着層
１８　固定部材
Ｗ　ワーク（ウェーハ）
  DESCRIPTION OF SYMBOLS 1 Double-side polish apparatus 2 Upper surface plate 2a Upper surface 2b Recessed surface 2c Lower surface 3 Lower surface plate 4 Rotation surface plate 5 Sun gear 6 Internal gear 7 Polishing pad 8 Holding hole 9 Carrier plate 10 Through-hole 11 Hole 12 Work thickness measuring instrument 13 Window material 14 Cylinder Portion 14a Side 14b Annular recess 14c Top 14d Projection 15 Flange 15a Side 15b Bottom 15c Outer peripheral 16 O-ring 17 Adhesive layer 18 Fixing member W Workpiece (wafer)

Claims (4)

  1. 　上定盤および下定盤を有する回転定盤と、該回転定盤の中心部に設けられたサンギアと、前記回転定盤の外周部に設けられたインターナルギアと、前記上定盤と前記下定盤との間に設けられ、ワークを保持する１つ以上の保持孔が設けられたキャリアプレートとを備えるワークの両面研磨装置において、
    　前記上定盤または前記下定盤には、該上定盤または該下定盤の上面から下面まで貫通する１以上の貫通孔が設けられ、
    　前記研磨パッドには、前記貫通孔に対応する位置に穴が設けられ、
    　前記ワークの両面研磨中に、前記ワークの厚みを前記１つ以上の貫通孔および穴を介して計測することが可能なワーク厚み計測器をさらに備え、
    　前記１以上の貫通孔の各々には、中実の窓材が挿入されており、該窓材は、筒部と前記貫通孔の径より大きい径を有するフランジ部とからなり、前記筒部の側面には環状の凹部が設けられ、該環状の凹部にＯリングが配置された状態で前記筒部が前記研磨パッド側から前記貫通孔に挿入されていることを特徴とする両面研磨装置。     A rotating surface plate having an upper surface plate and a lower surface plate, a sun gear provided at the center of the rotating surface plate, an internal gear provided at the outer periphery of the rotating surface plate, the upper surface plate, and the lower surface plate And a double-side polishing apparatus for a workpiece, comprising a carrier plate provided with one or more holding holes for holding the workpiece,
    The upper surface plate or the lower surface plate is provided with one or more through holes penetrating from the upper surface to the lower surface of the upper surface plate or the lower surface plate,
    The polishing pad is provided with a hole at a position corresponding to the through hole,
    A work thickness measuring instrument capable of measuring the thickness of the work through the one or more through holes and holes during double-side polishing of the work;
    A solid window material is inserted into each of the one or more through holes, and the window material includes a cylindrical portion and a flange portion having a diameter larger than the diameter of the through hole. A double-side polishing apparatus, wherein an annular recess is provided on a side surface, and the cylindrical portion is inserted into the through-hole from the polishing pad side with an O-ring disposed in the annular recess.
  2. 　前記筒部は、前記上定盤または前記下定盤の厚みよりも大きな長さを有して前記貫通孔から突出した突出部を有し、該突出部が固定部材によって前記上定盤の上面または前記下定盤の下面に固定されている、請求項１に記載の両面研磨装置。 The cylindrical portion has a protruding portion that has a length larger than the thickness of the upper surface plate or the lower surface plate and protrudes from the through hole, and the protruding portion is fixed to the upper surface of the upper surface plate or The double-side polishing apparatus according to claim 1, wherein the double-side polishing apparatus is fixed to a lower surface of the lower surface plate.
  3. 　前記貫通孔を区画する前記上定盤の側壁の底部、または前記貫通孔を区画する前記下定盤の側壁の頂部に凹部が設けられており、前記窓材のフランジ部が前記凹部に嵌合されている、請求項１または２に記載の両面研磨装置。 A recess is provided at the bottom of the side wall of the upper surface plate that defines the through hole, or at the top of the side wall of the lower surface plate that defines the through hole, and the flange portion of the window material is fitted into the recess. The double-side polishing apparatus according to claim 1 or 2.
  4. 　前記研磨パッドが前記フランジ部の外周部を覆っている、請求項１～３のいずれか一項に記載の両面研磨装置。
          The double-side polishing apparatus according to any one of claims 1 to 3, wherein the polishing pad covers an outer peripheral portion of the flange portion.
PCT/JP2019/005924 2018-04-11 2019-02-18 Double-sided polishing device for workpiece WO2019198343A1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115297997A (en) * 2020-03-23 2022-11-04 胜高股份有限公司 Double-side polishing device for workpiece

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7168109B1 (en) * 2022-01-24 2022-11-09 信越半導体株式会社 Double-sided polishing machine

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030180973A1 (en) * 2002-02-04 2003-09-25 Kurt Lehman Methods and systems for monitoring a parameter of a measurement device during polishing, damage to a specimen during polishing, or a characteristic of a polishing pad or tool
US20030205325A1 (en) * 2001-12-12 2003-11-06 Lam Research Corporation Apparatus and method for providing a signal port in a polishing pad for optical endpoint detection
JP2011249833A (en) * 1995-03-28 2011-12-08 Applied Materials Inc Polishing pad for use in in-situ endpoint detection in cmp process
JP2017052027A (en) * 2015-09-08 2017-03-16 株式会社東京精密 Wafer polishing device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5893796A (en) * 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
JP5917994B2 (en) * 2012-04-23 2016-05-18 スピードファム株式会社 Measuring window structure for polishing equipment
JP6197598B2 (en) * 2013-11-18 2017-09-20 株式会社Sumco Double-side polishing apparatus and double-side polishing method for work
JP2016064495A (en) * 2014-09-24 2016-04-28 東洋ゴム工業株式会社 Laminated polishing pad and manufacturing method of the same
JP6622105B2 (en) * 2016-02-10 2019-12-18 スピードファム株式会社 Surface polishing equipment
JP6622117B2 (en) * 2016-03-08 2019-12-18 スピードファム株式会社 Planar polishing apparatus and carrier

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011249833A (en) * 1995-03-28 2011-12-08 Applied Materials Inc Polishing pad for use in in-situ endpoint detection in cmp process
US20030205325A1 (en) * 2001-12-12 2003-11-06 Lam Research Corporation Apparatus and method for providing a signal port in a polishing pad for optical endpoint detection
US20030180973A1 (en) * 2002-02-04 2003-09-25 Kurt Lehman Methods and systems for monitoring a parameter of a measurement device during polishing, damage to a specimen during polishing, or a characteristic of a polishing pad or tool
JP2017052027A (en) * 2015-09-08 2017-03-16 株式会社東京精密 Wafer polishing device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115297997A (en) * 2020-03-23 2022-11-04 胜高股份有限公司 Double-side polishing device for workpiece

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