WO2019192084A1 - 一种igzo有源层、氧化物薄膜晶体管的制备方法 - Google Patents

一种igzo有源层、氧化物薄膜晶体管的制备方法 Download PDF

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WO2019192084A1
WO2019192084A1 PCT/CN2018/092358 CN2018092358W WO2019192084A1 WO 2019192084 A1 WO2019192084 A1 WO 2019192084A1 CN 2018092358 W CN2018092358 W CN 2018092358W WO 2019192084 A1 WO2019192084 A1 WO 2019192084A1
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igzo
film
plasma cleaning
active layer
argon
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French (fr)
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武岳
吴伟
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深圳市华星光电半导体显示技术有限公司
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Priority to US16/203,159 priority Critical patent/US10797166B2/en
Publication of WO2019192084A1 publication Critical patent/WO2019192084A1/zh

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    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments

Definitions

  • the invention relates to the field of display, in particular to a preparation method of a flexible PI substrate and a preparation method of the corresponding high temperature resistant rubber material.
  • IGZO indium gallium zinc oxide
  • Indium can increase the carrier concentration and increase the TFT current, but correspondingly reduces the controllability.
  • the etching solution used in the process is acidic, the pH is generally 3-5, and the etching solution further contains a component of hydrogen peroxide, so after the IGZO active layer 2' passes through the etching solution, the surface of the indium ( The contents of In), gallium (Ga), and zinc (Zn) are redistributed, and the oxygen (O) content is increased.
  • the blank sample is an IGZO film deposited by physical vapor deposition (PVD).
  • PVD physical vapor deposition
  • the technical problem to be solved by the present invention is to provide a method for preparing an IGZO active layer and a method for preparing an oxide thin film transistor, which can adjust elements of the IGZO active layer film surface and improve electrical properties thereof.
  • an aspect of an embodiment of the present invention provides a method for fabricating an IGZO active layer, including the steps of:
  • a plasma cleaning treatment is performed on the surface of the IGZO film by using argon gas or helium gas, and the element content on the surface of the IGZO film is adjusted to form an IGZO active layer.
  • the step of performing plasma cleaning treatment on the surface of the IGZO film by using argon gas or helium gas specifically includes:
  • Plasma cleaning of the film surface of the IGZO active layer is performed by using argon gas or helium gas, wherein the plasma cleaning power is 1000-6000 watts; the gas pressure is 30-70 mTorr, and the gas flow rate is 200- 2000 standard cc / min; processing time is 0-120 seconds.
  • the IGZO film subjected to the plasma cleaning treatment was subjected to photoresist coating, exposure, development, and etching on the surface to complete IGZO patterning to form an IGZO active layer.
  • the present invention also provides a method of fabricating an oxide thin film transistor, comprising the steps of:
  • the step of performing plasma cleaning treatment on the surface of the IGZO film by using argon gas or helium gas specifically includes:
  • the plasma cleaning uses a power of 3000-4000 watts; the gas pressure is 30-50 mTorr; the gas flow rate is 500-1000 standard cc/min, and the processing time is 5-20 seconds.
  • the IGZO material is deposited on the gate insulating layer to form an IGZO film, and the surface of the IGZO film is subjected to plasma cleaning treatment using argon or helium gas to form an IGZO active layer:
  • the IGZO material is deposited on the gate insulating layer to form an IGZO film, and the surface of the IGZO film is subjected to plasma cleaning treatment using argon or helium gas to form an IGZO active layer:
  • the surface of the IGZO thin film was subjected to plasma cleaning treatment with argon or helium gas to form an IGZO active layer.
  • the method for preparing an IGZO active layer and the method for preparing an oxide thin film transistor provided by the present invention after forming an IGZO film, performing plasma cleaning treatment on the surface of the IGZO film by using argon gas or helium gas to form a film of the IGZO active layer
  • the Ga content and the Zn content in the surface increase, and the O content and the In content decrease, thereby reducing the performance impact caused by the wet etching process for forming the source and drain electrodes.
  • FIG. 1 is a schematic structural view of an oxide thin film transistor in the prior art
  • FIG. 2 is a schematic diagram of a main flow of an embodiment of an IGZO active layer preparation method provided by the present invention
  • FIG. 3 is a schematic diagram showing the main flow of an embodiment of a method for fabricating an oxide thin film transistor provided by the present invention
  • FIG. 5 is a schematic structural view of the finally formed oxide thin film transistor of FIG. 3.
  • FIG. 5 is a schematic structural view of the finally formed oxide thin film transistor of FIG. 3.
  • Figure 6 is a schematic illustration of the steps of a more detailed preparation process of another embodiment of Figure 3;
  • FIG. 2 it is a schematic diagram of a main flow of an embodiment of an IGZO active layer preparation method provided by the present invention; in this embodiment, the method includes the following steps:
  • Step S11 performing plasma cleaning treatment on the surface of the IGZO film by using argon gas or helium gas to adjust the element content on the surface of the IGZO film, for example, forming a certain amount of oxygen holes in the IGZO active layer to form IGZO. Source layer.
  • the step of performing plasma cleaning treatment on the surface of the IGZO film by using argon gas or helium gas specifically includes:
  • Plasma cleaning of the film surface of the IGZO active layer is performed by using argon gas or helium gas, wherein the plasma cleaning power is 1000-6000 watts; the gas pressure is 30-70 mTorr, and the gas flow rate is 200- 2000 standard cc / min; processing time is 0-120 seconds.
  • the plasma cleaning employs a power of 3000-4000 watts; a gas pressure of 30-50 mTorr; a gas flow rate of 500-1000 standard cc/min, and a processing time of 5-20 seconds.
  • step S11 the following steps are further included in step S11:
  • the IGZO film subjected to the plasma cleaning treatment was subjected to photoresist coating, exposure, development, and etching on the surface to complete IGZO patterning to form an IGZO active layer.
  • plasma cleaning of the film surface of the IGZO active layer by argon gas or helium gas can adjust the content of each element of the film surface of the IGZO active layer, as shown in Table 2 below.
  • Table 2 a schematic of the change of each element after argon treatment is shown.
  • the blank sample is an IGZO film deposited by physical vapor deposition (PVD).
  • PVD physical vapor deposition
  • the surface Ga content percentage increases from 12.53 to 26.12, and the Zn content percentage increases from 14.77 to 15.66.
  • the percentage of O content decreased from 56.98 to 43.53, and the percentage of In content decreased from 15.72 to 14.69.
  • the direction of film surface adjustment of the IGZO film after argon gas or helium gas treatment is opposite to the direction of adjustment of the film surface of the IGZO film by the etching solution, thereby being treated by using argon gas or helium gas.
  • FIG. 3 is a schematic diagram of a main flow of an embodiment of a method for fabricating an oxide thin film transistor provided by the present invention; in the embodiment, the method includes the following steps:
  • Step S20 providing a substrate, and depositing a first metal layer thereon to form a gate
  • Step S22 depositing an IGZO material on the gate insulating layer to form an IGZO thin film, and performing plasma cleaning treatment on the surface of the IGZO thin film by using argon gas or helium gas to form an IGZO active layer;
  • the step of performing plasma cleaning treatment on the surface of the IGZO film by using argon gas or helium gas specifically includes:
  • the plasma cleaning uses a power of 3000-4000 watts; a gas pressure of 30-50 mTorr; a gas flow rate of 500-1000 standard cc/min, and a processing time of 5-20 seconds.
  • the step S22 specifically includes:
  • step S22 specifically includes:
  • the surface of the IGZO thin film was subjected to plasma cleaning treatment with argon or helium gas to form an IGZO active layer.
  • the step S23 is specifically:
  • the photoresist is thinned, and the second metal layer is formed into a gate and a drain by wet etching.
  • FIG. 4 is a schematic diagram showing the steps of a more detailed preparation process of a corresponding embodiment of FIG. 3;
  • Step S30 forming a first metal, that is, depositing a first layer of metal on the substrate substrate 10 (such as a glass substrate) to form a gate electrode 11;
  • Step S31 depositing a gate insulating layer 12 on the gate electrode 11;
  • Step S32 depositing an IGZO material by physical vapor deposition (PVD) on the gate insulating layer 12 to form an IGZO thin film 13; at this time, the surface of the IGZO thin film needs to be plasma-cleaned with argon or helium gas, specifically
  • PVD physical vapor deposition
  • Step S33 the plasma cleaning process of the IGZO film on the surface of the photoresist coating, exposure, development, etching and other processes to complete the IGZO patterning, forming an IGZO active layer 130;
  • Step S34 depositing a second metal layer 14 on the IGZO active layer 130;
  • step S35 the second metal layer 14 is etched by wet etching to form a gate electrode 140 and a drain electrode 141.
  • the structure of the finally formed oxide thin film transistor is as shown in FIG. 5, wherein the IGZO film in the B region is treated only by argon gas or helium gas, the conductivity is improved, and the contact resistance is lowered; and the IGZO film in the A region is first subjected to argon. Gas or helium treatment, followed by etching by etching solution, wherein the content of Ga, Zn, O and In elements is redistributed, which is beneficial to electrical improvement.
  • FIG. 6 it is a schematic diagram of the steps of a more detailed preparation process of another embodiment corresponding to FIG.
  • Step S40 forming a first metal, that is, depositing a first layer of metal on the substrate substrate 10 (such as a glass substrate) to form a gate electrode 11;
  • Step S41 depositing a gate insulating layer 12 on the gate electrode 11;
  • Step S42 depositing an IGZO material by physical vapor deposition (PVD) on the gate insulating layer 12 to form an IGZO thin film 13; at this time, the surface of the IGZO thin film needs to be plasma-cleaned with argon or helium gas, specifically
  • PVD physical vapor deposition
  • Step S43 depositing a second metal layer 14 on the IGZO film 13;
  • Step S44 coating a photoresist 15 on the second metal layer 14;
  • Step S46 thinning the photoresist 15 in the intermediate position to expose a part of the surface of the second metal layer 14;
  • step S47 the second metal layer 14 is etched by wet etching to form the gate electrode 140 and the drain electrode 141.
  • the structure of the finally formed oxide thin film transistor is as shown in the following one of FIG. 6, wherein the IGZO active layer 130 is treated only by argon gas or helium gas, the conductivity is improved, and the contact resistance is lowered;
  • the film layer is first treated with argon gas or helium gas, and then etched by an etching solution, wherein the contents of Ga, Zn, O and In elements are redistributed, which is favorable for electrical improvement.
  • the method for preparing an IGZO active layer and the method for preparing an oxide thin film transistor provided by the present invention after forming an IGZO film, performing plasma cleaning treatment on the surface of the IGZO film by using argon gas or helium gas to form a film of the IGZO active layer
  • the Ga content and the Zn content in the surface increase, and the O content and the In content decrease, thereby reducing the performance impact caused by the wet etching process for forming the source and drain electrodes.

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Abstract

一种IGZO有源层的制备方法，包括步骤：在衬底基板（10）上沉积第一金属层、栅绝缘层（12）后，在栅绝缘层上沉积IGZO材料，形成IGZO薄膜（13）；对IGZO薄膜表面采用氩气或氦气进行等离子清洗处理，调整IGZO薄膜表面的元素含量，并形成IGZO有源层（130）。提供一种氧化物薄膜晶体管的制备方法。通过对IGZO有源层膜面的元素进行调节，提高其电气性能。

Description

一种IGZO有源层、氧化物薄膜晶体管的制备方法
本申请要求于2018年4月3日提交中国专利局、申请号为201810298222.4、发明名称为“一种IGZO有源层、氧化物薄膜晶体管的制备方法”的中国专利申请的优先权，上述专利的全部内容通过引用结合在本申请中。
技术领域
本发明涉及显示领域，特别涉及一种柔性PI基板的制备方法及相应耐高温胶材的制备方法。
背景技术
在薄膜晶体管液晶显示器(TFT-LCD)的阵列基板中，对于TFT中的金属氧化物半导体层，目前应用较为广泛的是IGZO(铟镓锌氧化物)材料，这三种金属元素，在半导体中起到的作用各不相同，举例来说，镓能够有效的稳定氧，提高IGZO-TFT的可控性，铟可以增加载流子浓度，提高TFT电流，但是相应地会降低可控性能。
如图1中示出了现有技术中一种背沟道刻蚀型(Back channel etching，BCE)结构的氧化物薄膜晶体管(TFT)的结构示意图，其包括依次在玻璃基板1’上沉积的栅极11’、栅绝缘层12’、IGZO有源层13’和源漏极14’。但是在现有的制备TFT过程中，尤其是制备BCE结构的TFT的过程中，由于第二金属层的源漏极14’是采用湿蚀刻的方法形成，为了保证没有金属残留，通常在第二金属层刚刚蚀刻开后(just etch，JE)，增加一定的额外蚀刻时间(over etch，OE)，在该额外蚀刻时间内，会使IGZO有源层13’的膜面与蚀刻液充分接触。
由于该制程所使用的蚀刻液为酸性，其PH值一般为3-5，且该蚀刻液中还包含有双氧水的成分，故在IGZO有源层2’经过蚀刻液后，其表面的铟(In)、镓(Ga)、锌(Zn)等含量会重新分布，并且氧(O)含量有所上升。
具体地，在针对背沟道进行检测，发现背沟道中镓、锌含量有较大降低，而铟、氧含量有所升高。例如，下表1示出在一个实施例中的各成分前后的对比结果。
表1、各成分刻蚀前后的百分比变化
峰值(Peak) 空白样品原子百分比 经过蚀刻液后表面原子百分比
Ga 2p 12.53 10.78
Zn 2p 14.77 7.82
O 1s 56.98 62.97
In 3d 15.72 18.42
其中，空白样品为经过物理气相沉积方法(PVD)沉积而成的IGZO薄膜，在经过蚀刻液后，其表面Ga含量百分比从12.53下降到10.78，Zn含量百分比从14.77到7.82，O含量百分比从56.98升高到62.97，In含量百分比从15.72升高到18.42，这种变化会对IGZO薄膜的性能产生影响。
发明内容
本发明所要解决的技术问题在于，提供一种IGZO有源层制备方法及氧化物薄膜晶体管的制备方法，可以对IGZO有源层膜面的元素进行调节，提高其电气性能。
为了解决上述技术问题，本发明的实施例的一方面提供一种IGZO有源层的制备方法，包括步骤：
在衬底基板上沉积第一金属层、栅绝缘层后，在所述栅绝缘层上沉积IGZO材料，形成IGZO薄膜；
对所述IGZO薄膜表面采用氩气或氦气进行等离子清洗处理，调整所述IGZO薄膜表面的元素含量，并形成IGZO有源层。
其中，对所述IGZO薄膜的表面采用氩气或氦气进行等离子清洗处理的步骤具体包括：
采用氩气或者氦气对所述IGZO有源层的膜面进行等离子清洗，其中，所述等离子清洗所采用的功率为1000-6000瓦；气体压力为30-70毫托，气体流量为200-2000标准毫升/分钟；处理时间为0-120秒。
其中，所述等离子清洗所采用的功率为3000-4000瓦；气体压力为30-50毫托；气体流量为500-1000标准毫升/分钟，处理时间为5-20秒。
其中，进一步包括：
对经过等离子清洗处理的IGZO薄膜，在其表面上进行光阻涂布、曝光、显影、蚀刻，完成IGZO的图案化，形成IGZO有源层。
相应地，本发明还提供一种氧化物薄膜晶体管的制备方法，其包括步骤：
提供一衬底基板，并在上面沉积第一金属层，形成栅极；
在所述第一金属层上沉积栅绝缘层；
在所述栅绝缘层上沉积IGZO材料，形成IGZO薄膜，对所述IGZO薄膜的表面采用氩气或氦气进行等离子清洗处理，形成IGZO有源层；
在所述IGZO有源层上沉积第二金属层，并经过刻蚀形成栅极和漏极。
其中，对所述IGZO薄膜的表面采用氩气或氦气进行等离子清洗处理的步骤具体包括：
采用氩气或者氦气对所述IGZO薄膜的表面进行等离子清洗，其中，所述等离子清洗所采用的功率为1000-6000瓦；气体压力为30-70毫托，气体流量为200-2000标准毫升/分钟；处理时间为0-120秒。
其中，所述等离子清洗所采用的功率为3000-4000瓦；气体压力为30-50毫托；气体流量为500-1000标准毫升/分钟，处理时间为5-20秒。
其中，在所述栅绝缘层上沉积IGZO材料，形成IGZO薄膜，对所述IGZO薄膜的表面采用氩气或氦气进行等离子清洗处理，形成IGZO有源层具体为：
在所述栅绝缘层上以物理气相沉积法沉积IGZO材料，形成IGZO薄膜；
以氩气或氦气对所述IGZO薄膜的表面进行等离子清洗处理；
对经过等离子清洗处理的IGZO薄膜，在其表面上进行光阻涂布、曝光、显影、蚀刻，完成IGZO的图案化，形成IGZO有源层。
其中，在所述栅绝缘层上沉积IGZO材料，形成IGZO薄膜，对所述IGZO薄膜的表面采用氩气或氦气进行等离子清洗处理，形成IGZO有源层具体为：
在所述栅绝缘层上以物理气相沉积法沉积IGZO材料，形成IGZO薄膜；
以氩气或氦气对所述IGZO薄膜的表面进行等离子清洗处理，形成IGZO有源层。
其中，在所述IGZO有源层上沉积第二金属层，并经过刻蚀形成栅极和漏极的步骤具体为；
在所述IGZO有源层上沉积第二金属层；
在所述第二金属层上涂布光刻胶；
对外围的第二金属层以及IGZO薄膜进行蚀刻处理；
对所述光刻胶进行减薄，通过湿刻处理，使第二金属层形成栅极和漏极。
实施本发明实施例，具有如下有益效果：
本发明提供的IGZO有源层制备方法以及氧化物薄膜晶体管的制备方法，通过在形成IGZO薄膜后，对IGZO薄膜表面采用氩气或氦气进行等离子清洗处理，使所述IGZO有源层的膜面中的Ga含量和Zn含量上升，O含量和In含量下降，从而降低形成源漏极所采用湿刻工艺时带来的性能影响。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它的附图。
图1是现有技术中一种氧化物薄膜晶体管的结构示意图；
图2是本发明提供的一种IGZO有源层制备方法一个实施例的主流程示意图；
图3是本发明提供的一种氧化物薄膜晶体管的制备方法的一个实施例的主流程示意图；
图4是图3中对应的一个实施例的更详细制备过程的步骤示意图；
图5是图3中最终形成的氧化物薄膜晶体管结构示意图。
图6是图3中对应的另一个实施例的更详细制备过程的步骤示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚完整地描述，显然，所描述的实施例仅仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其它实施例，都属于本发明保护的范围。
在此，还需要说明的是，为了避免因不必要的细节而模糊了本发明，在附图中仅仅示出了与根据本发明的方案密切相关的结构和/或处理步骤，而省略了与本发明关系不大的其他细节。
如图2所示，是本发明提供的一种IGZO有源层制备方法一个实施例的主流程示意图；在该实施例中，所述方法包括如下步骤：
步骤S10，在衬底基板上沉积第一金属层、栅绝缘层后，在所述栅绝缘层上沉积IGZO材料，并形成IGZO薄膜；
步骤S11，对所述IGZO薄膜表面采用氩气或氦气进行等离子清洗处理，调整所述IGZO薄膜表面的元素含量，例如使所述IGZO有源层中形成一定数量的氧空穴，形成IGZO有源层。
其中，对所述IGZO薄膜的表面采用氩气或氦气进行等离子清洗处理的步骤具体包括：
采用氩气或者氦气对所述IGZO有源层的膜面进行等离子清洗，其中，所述等离子清洗所采用的功率为1000-6000瓦；气体压力为30-70毫托，气体流量为200-2000标准毫升/分钟；处理时间为0-120秒。
在一个更具体的例子中，所述等离子清洗所采用的功率为3000-4000瓦；气体压力为30-50毫托；气体流量为500-1000标准毫升/分钟，处理时间为5-20秒。
可以理解的是，在一些例子中，在步骤S11中进一步包括如下步骤：
对经过等离子清洗处理的IGZO薄膜，在其表面上进行光阻涂布、曝光、显影、蚀刻，完成IGZO的图案化，形成IGZO有源层。
可以理解的是，采用氩气或者氦气对所述IGZO有源层的膜面进行等离 子清洗，可以对IGZO有源层的膜面的各元素的含量进行调整，如下表2所示，示出了一个实施例中，经过氩气处理后各元素的变更示意表。
表2 经过氩气处理后各成分百分比变化
Figure PCTCN2018092358-appb-000001
其中，空白样品为经过物理气相沉积方法(PVD)沉积而成的IGZO薄膜，在经过氩气(Ar)清洗后，其表面Ga含量百分比从12.53上升到26.12，Zn含量百分比从14.77上升到15.66，O含量百分比从56.98下降到43.53，In含量百分比从15.72下降到14.69。对照前述表1中的数据可以知道，经过氩气或者氦气处理对IGZO薄膜的膜面调整方向与蚀刻液对IGZO薄膜的膜面的调整方向相反，从而通过采用氩气或者氦气处理，可以提升BCE型氧化物薄膜晶体管中IGZO有源层的电气性能。
如图3所示，是本发明提供的一种氧化物薄膜晶体管的制备方法的一个实施例的主流程示意图；在该实施例中，所述方法包括如下步骤：
步骤S20，提供一衬底基板，并在上面沉积第一金属层，形成栅极；
步骤S21，在所述第一金属层上沉积栅绝缘层；
步骤S22，在所述栅绝缘层上沉积IGZO材料，形成IGZO薄膜，对所述IGZO薄膜的表面采用氩气或氦气进行等离子清洗处理，形成IGZO有源层；
其中，对所述IGZO薄膜的表面采用氩气或氦气进行等离子清洗处理的步骤具体包括：
采用氩气或者氦气对所述IGZO薄膜的表面进行等离子清洗，其中，所述等离子清洗所采用的功率为1000-6000瓦；气体压力为30-70毫托，气体 流量为200-2000标准毫升/分钟；处理时间为0-120秒。
具体地，在一个例子中，所述等离子清洗所采用的功率为3000-4000瓦；气体压力为30-50毫托；气体流量为500-1000标准毫升/分钟，处理时间为5-20秒。
步骤S23，在所述IGZO有源层上沉积第二金属层，并经过刻蚀形成栅极和漏极。
具体地，在一个例子中，所述步骤S22具体包括：
在所述栅绝缘层上以物理气相沉积法沉积IGZO材料，形成IGZO薄膜；
以氩气或氦气对所述IGZO薄膜的表面进行等离子清洗处理；
对经过等离子清洗处理的IGZO薄膜，在其表面上进行光阻涂布、曝光、显影、蚀刻，完成IGZO的图案化，形成IGZO有源层。
具体地，在另一个例子中，所述步骤S22具体包括：
在所述栅绝缘层上以物理气相沉积法沉积IGZO材料，形成IGZO薄膜；
以氩气或氦气对所述IGZO薄膜的表面进行等离子清洗处理，形成IGZO有源层。
其中，所述步骤S23具体为：
在所述IGZO有源层上沉积第二金属层；
在所述第二金属层上涂布光刻胶；
对外围的第二金属层以及IGZO薄膜进行蚀刻处理；
对所述光刻胶进行减薄，通过湿刻处理，使第二金属层形成栅极和漏极。
为了便于理解上述所涉及的两个例子，下述分别以具体的实施例进行说明。
如图4所示，是图3中对应的一个实施例的更详细制备过程的步骤示意图；
在所述实施例中，其示出了一个采用五道光罩制备氧化物薄膜晶体管的过程。具体地包括如下步骤：
步骤S30，形成第一道金属，即在衬底基板10(如玻璃基板)上沉积第一层金属，形成栅极11；
步骤S31，在所述栅极11上沉积栅绝缘层12；
步骤S32，在所述栅绝缘层12采用以物理气相沉积法(PVD)沉积IGZO材料，形成IGZO薄膜13；此时需要以氩气或氦气对所述IGZO薄膜的表面进行等离子清洗处理，具体地处理条件和方法可参照前述对图3的描述；
步骤S33，对经过等离子清洗处理的IGZO薄膜，在其表面上进行光阻涂布、曝光、显影、蚀刻等过程，完成IGZO的图案化，形成IGZO有源层130；
步骤S34，在所述IGZO有源层130上沉积第二金属层14；
步骤S35，经过湿刻法对所述第二金属层14进行刻蚀形成栅极140和漏极141。
最终形成的氧化物薄膜晶体管结构如图5所示，其中，B区域的IGZO薄膜只经过氩气或氦气处理，其导电性提高，并降低接触电阻；而A区域的IGZO薄膜先经过过氩气或氦气处理，随后经过蚀刻液侵蚀，其中Ga、Zn、O和In元素的含量重新分布，有利于电性提升。
如图6所示，是图3中对应的另一个实施例的更详细制备过程的步骤示意图。
在所述实施例中，其示出了一个采用四道光罩制备氧化物薄膜晶体管的过程。具体地包括如下步骤：
步骤S40，形成第一道金属，即在衬底基板10(如玻璃基板)上沉积第一层金属，形成栅极11；
步骤S41，在所述栅极11上沉积栅绝缘层12；
步骤S42，在所述栅绝缘层12采用以物理气相沉积法(PVD)沉积IGZO材料，形成IGZO薄膜13；此时需要以氩气或氦气对所述IGZO薄膜的表面进行等离子清洗处理，具体地处理条件和方法可参照前述对图3的描述；
步骤S43，在所述IGZO薄膜13上沉积第二金属层14；
步骤S44，在所述第二金属层14上涂布光刻胶15；
步骤S45，对外围的第二金属层14以及IGZO薄膜13进行刻蚀，形成IGZO有源层130；
步骤S46，对中间位置的光刻胶15进行减薄，露出第二金属层14的一部份表面；
步骤S47，采用湿刻法湿刻法对所述第二金属层14进行刻蚀形成栅极140和漏极141。
最终形成的氧化物薄膜晶体管结构如图6中最下列一个图所示，其中，IGZO有源层130两端只经过氩气或氦气处理，其导电性提高，并降低接触电阻；而中间位置的膜层先经过过氩气或氦气处理，随后经过蚀刻液侵蚀，其中Ga、Zn、O和In元素的含量重新分布，有利于电性提升。
实施本发明实施例，具有如下有益效果：
本发明提供的IGZO有源层制备方法以及氧化物薄膜晶体管的制备方法，通过在形成IGZO薄膜后，对IGZO薄膜表面采用氩气或氦气进行等离子清洗处理，使所述IGZO有源层的膜面中的Ga含量和Zn含量上升，O含量和In含量下降，从而降低形成源漏极所采用湿刻工艺时带来的性能影响。
需要说明的是，在本文中，诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个......”限定的要素，并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。
以上所述仅是本申请的具体实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本申请原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本申请的保护范围。

Claims (14)

  1. 一种IGZO有源层的制备方法，其中，包括步骤：
    在衬底基板上沉积第一金属层、栅绝缘层后，在所述栅绝缘层上沉积IGZO材料，形成IGZO薄膜；
    对所述IGZO薄膜表面采用氩气或氦气进行等离子清洗处理，调整所述IGZO薄膜表面的元素含量，并形成IGZO有源层。
  2. 如权利要求1所述的方法，其中，对所述IGZO薄膜的表面采用氩气或氦气进行等离子清洗处理的步骤具体包括：
    采用氩气或者氦气对所述IGZO有源层的膜面进行等离子清洗，其中，所述等离子清洗所采用的功率为1000-6000瓦；气体压力为30-70毫托，气体流量为200-2000标准毫升/分钟；处理时间为0-120秒。
  3. 如权利要求1所述的方法，其中，所述等离子清洗所采用的功率为3000-4000瓦；气体压力为30-50毫托；气体流量为500-1000标准毫升/分钟，处理时间为5-20秒。
  4. 如权利要求3所述的方法，其中，进一步包括：
    对经过等离子清洗处理的IGZO薄膜，在其表面上进行光阻涂布、曝光、显影、蚀刻，完成IGZO的图案化，形成IGZO有源层。
  5. 一种氧化物薄膜晶体管的制备方法，其中，包括步骤：
    提供一衬底基板，并在上面沉积第一金属层，形成栅极；
    在所述第一金属层上沉积栅绝缘层；
    在所述栅绝缘层上沉积IGZO材料，形成IGZO薄膜，对所述IGZO薄膜的表面采用氩气或氦气进行等离子清洗处理，形成IGZO有源层；
    在所述IGZO有源层上沉积第二金属层，并经过湿刻形成栅极和漏极。
  6. 如权利要求5所述的方法，其中，对所述IGZO薄膜的表面采用氩 气或氦气进行等离子清洗处理的步骤具体包括：
    采用氩气或者氦气对所述IGZO薄膜的表面进行等离子清洗，其中，所述等离子清洗所采用的功率为1000-6000瓦；气体压力为30-70毫托，气体流量为200-2000标准毫升/分钟；处理时间为0-120秒。
  7. 如权利要求6所述的方法，其中，所述等离子清洗所采用的功率为3000-4000瓦；气体压力为30-50毫托；气体流量为500-1000标准毫升/分钟，处理时间为5-20秒。
  8. 如权利要求5所述的方法，其中，在所述栅绝缘层上沉积IGZO材料，形成IGZO薄膜，对所述IGZO薄膜的表面采用氩气或氦气进行等离子清洗处理，形成IGZO有源层具体为：
    在所述栅绝缘层上以物理气相沉积法沉积IGZO材料，形成IGZO薄膜；
    以氩气或氦气对所述IGZO薄膜的表面进行等离子清洗处理；
    对经过等离子清洗处理的IGZO薄膜，在其表面上进行光阻涂布、曝光、显影、蚀刻，完成IGZO的图案化，形成IGZO有源层。
  9. 如权利要求6所述的方法，其中，在所述栅绝缘层上沉积IGZO材料，形成IGZO薄膜，对所述IGZO薄膜的表面采用氩气或氦气进行等离子清洗处理，形成IGZO有源层具体为：
    在所述栅绝缘层上以物理气相沉积法沉积IGZO材料，形成IGZO薄膜；
    以氩气或氦气对所述IGZO薄膜的表面进行等离子清洗处理；
    对经过等离子清洗处理的IGZO薄膜，在其表面上进行光阻涂布、曝光、显影、蚀刻，完成IGZO的图案化，形成IGZO有源层。
  10. 如权利要求7所述的方法，其中，在所述栅绝缘层上沉积IGZO材料，形成IGZO薄膜，对所述IGZO薄膜的表面采用氩气或氦气进行等离子清洗处理，形成IGZO有源层具体为：
    在所述栅绝缘层上以物理气相沉积法沉积IGZO材料，形成IGZO薄膜；
    以氩气或氦气对所述IGZO薄膜的表面进行等离子清洗处理；
    对经过等离子清洗处理的IGZO薄膜，在其表面上进行光阻涂布、曝光、显影、蚀刻，完成IGZO的图案化，形成IGZO有源层。
  11. 如权利要求5所述的方法，其中，在所述栅绝缘层上沉积IGZO材料，形成IGZO薄膜，对所述IGZO薄膜的表面采用氩气或氦气进行等离子清洗处理，形成IGZO有源层具体为：
    在所述栅绝缘层上以物理气相沉积法沉积IGZO材料，形成IGZO薄膜；
    以氩气或氦气对所述IGZO薄膜的表面进行等离子清洗处理，形成IGZO有源层。
  12. 如权利要求6所述的方法，其中，在所述栅绝缘层上沉积IGZO材料，形成IGZO薄膜，对所述IGZO薄膜的表面采用氩气或氦气进行等离子清洗处理，形成IGZO有源层具体为：
    在所述栅绝缘层上以物理气相沉积法沉积IGZO材料，形成IGZO薄膜；
    以氩气或氦气对所述IGZO薄膜的表面进行等离子清洗处理，形成IGZO有源层。
  13. 如权利要求7所述的方法，其中，在所述栅绝缘层上沉积IGZO材料，形成IGZO薄膜，对所述IGZO薄膜的表面采用氩气或氦气进行等离子清洗处理，形成IGZO有源层具体为：
    在所述栅绝缘层上以物理气相沉积法沉积IGZO材料，形成IGZO薄膜；
    以氩气或氦气对所述IGZO薄膜的表面进行等离子清洗处理，形成IGZO有源层。
  14. 如权利要求13所述的方法，其中，在所述IGZO有源层上沉积第二金属层，并经过湿刻形成栅极和漏极的步骤具体为；
    在所述IGZO有源层上沉积第二金属层；
    在所述第二金属层上涂布光刻胶；
    对外围的第二金属层以及IGZO薄膜进行蚀刻处理；
    对所述光刻胶进行减薄处理，并通过湿刻处理使第二金属层形成栅极和漏极。
PCT/CN2018/092358 2018-04-03 2018-06-22 一种igzo有源层、氧化物薄膜晶体管的制备方法 WO2019192084A1 (zh)

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