WO2019187324A1 - MgAl2O4焼結体及び該焼結体を用いたスパッタリングターゲット、並びにMgAl2O4焼結体の製造方法 - Google Patents
MgAl2O4焼結体及び該焼結体を用いたスパッタリングターゲット、並びにMgAl2O4焼結体の製造方法 Download PDFInfo
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Definitions
- the present invention relates to a MgAl 2 O 4 sintered body, a sputtering target using the sintered body, and a method for producing an MgAl 2 O 4 sintered body.
- Non-patent Document 1 Non-patent Document 1
- An object of an embodiment of the present invention is to provide a high-density and white MgAl 2 O 4 sintered body, a sputtering target using the sintered body, and a method for producing an MgAl 2 O 4 sintered body.
- Embodiments of the present invention 1) A MgAl 2 O 4 sintered body characterized in that the relative density is 90% or more and L * in the L * a * b * color system is 90 or more, 2) The MgAl 2 O 4 sintered body according to 1) above, wherein the in-plane distribution of the relative density is within ⁇ 0.2%, 3) The MgAl 2 O 4 sintered body according to 1) above, wherein the in-plane distribution of L * is within ⁇ 3, 4) The MgAl 2 O 4 sintered body according to any one of 1) to 3) above, wherein the impurity concentration is less than 100 wtppm, 5) A sputtering target using the MgAl 2 O 4 sintered body described in any one of 1) to 4) above.
- the embodiment of the present invention 6) The method for producing an MgAl 2 O 4 sintered body according to any one of 1) to 4) above, wherein the MgAl 2 O 4 powder is hot-pressed at 1150 to 1300 ° C. and then air is heated to 1350 ° C. or higher.
- a method for producing an MgAl 2 O 4 sintered body, characterized by sintering 7) The method for producing an MgAl 2 O 4 sintered body according to any one of the above 1) to 4), wherein the MgAl 2 O 4 powder is hot pressed so that the relative density is 79% or more and less than 90%. Then, it is an air sintering method, and the relative density is set to 90% or more. This is a method for producing a MgAl 2 O 4 sintered body.
- a high-density and white MgAl 2 O 4 sintered body and a sputtering target using the sintered body can be manufactured.
- an MgAl 2 O 4 film can be formed by sputtering, which can be industrially mass-produced.
- Example 13 It is a photograph of the MgAl 2 O 4 sintered body (after atmospheric sintering) produced in Example 13. It is a figure which shows the relationship between the relative density of a sintered compact, and L *. It is a figure which shows the relationship of the relative density of the sintered compact before and behind air sintering.
- the hot pressing temperature needs to be 1350 ° C. or higher in order to achieve a high density of 95% or higher relative density.
- the hot press temperature is 1350 ° C. or higher, oxygen deficiency occurs, and the color of the sintered body becomes gray or black.
- the entire sintered body is uniformly gray or black, but color unevenness often occurs due to filling unevenness or temperature unevenness.
- the film thickness distribution of the sputtered film reflects the uneven color.
- the color must be uniformed by hot pressing at a low temperature of 1300 ° C. or lower. In that case, the relative density of the sintered body is only 90% or lower. And the sputtering target using such a low density sintered compact also becomes a cause of a particle.
- the present inventor conducted intensive research and prioritized that there is no oxygen deficiency over the relative density in hot pressing (primary sintering), and high in atmospheric sintering (secondary sintering) after hot pressing. The knowledge that a white and high-density sintered body can be obtained by increasing the density was obtained.
- the MgAl 2 O 4 sintered body according to the embodiment of the present invention has a relative density of 90% or more, and L * in the L * a * b * color system of 90 or more, It is characterized by being.
- the relative density of the MgAl 2 O 4 sintered body is 90% or more, generation of particles can be suppressed when sputtering film formation is performed using a sputtering target using the sintered body. More preferably, the relative density is 95% or more.
- the MgAl 2 O 4 sintered body according to the embodiment of the present invention is characterized in that L * in the L * a * b * color system is 90 or more. If L * is 90 or more, it can be determined that the MgAl 2 O 4 sintered body and the sputtering target using the sintered body are white.
- NF333 manufactured by Nippon Denshoku Industries Co., Ltd. optical system specification based on JIS Z 8722
- L * which concerns on embodiment of this invention measures L * about the center part and edge part of a sintered compact surface, and makes those average values.
- an edge part in order to avoid an extreme edge, it measures with the space
- the center of the surface and four end portions of two line segments that intersect with the center at 90 degrees are used as measurement points, for a total of five points.
- the in-plane distribution of the relative density of the MgAl 2 O 4 sintered body is preferably within ⁇ 0.2%.
- the in-plane distribution of the relative density is within ⁇ 0.2%, the sputtered film quality can be improved in the sputtering target using the sintered body.
- the in-plane distribution of the relative density is a total of 17 in the cross-section of the sintered body (corresponding to the surface to be sputtered when processed into a sputtering target) at nine points in a cross shape as shown in FIG. The relative density of the location (one point because it intersects each other at the center) is measured, and the in-plane distribution of the relative density is obtained.
- the in-plane distribution of L * in the L * a * b * color system of the MgAl 2 O 4 sintered body is preferably within ⁇ 3.
- the L * distribution is within ⁇ 3
- the sputtered film quality can be improved in the sputtering target using the sintered body.
- the in-plane distribution of the relative density the in-plane distribution of L * is within the plane of the sintered body (corresponding to the plane to be sputtered when processed into a sputtering target) as shown in FIG.
- L * is measured at 9 points in a cross shape and 17 points in total at equal intervals (one point because they cross each other at the center), and the in-plane distribution of L * is obtained.
- the MgAl 2 O 4 sintered body according to the embodiment of the present invention preferably has an impurity concentration of less than 100 wtppm.
- Impurities that may deteriorate device characteristics such as memory elements include Na, Si, K, Ti, Cr, Mn, Fe, Ni, Cu, Zn, and Pb. Therefore, the total content of these impurities is It is preferable to be less than 100 wtppm. In the present disclosure, the purity of 99.99% or more is synonymous with the impurity concentration of less than 100 wtppm.
- the sputtering target according to the embodiment of the present invention uses the MgAl 2 O 4 sintered body according to the embodiment of the present invention described above.
- the thickness is preferably 3 mm or more. Note that the sputtering target is different in size and shape from the use of the infrared transmission window disclosed in the cited documents 1 and 2 and controls the submicron (for example, 0.08 ⁇ m) size particles and film thickness. The required characteristics are very different.
- Manufacturing method of MgAl 2 O 4 sintered body according to the embodiment of the present invention after hot-pressing (primary sintering) less than MgAl 2 O 4 powder 1300 ° C. 1150 ° C. or more, the atmosphere sintering at 1350 ° C. or higher ( Secondary sintering). This is because if the hot press temperature is less than 1150 ° C., the density is not sufficiently increased even by the subsequent air sintering, while if the hot press temperature is 1300 ° C. or higher, color unevenness due to oxygen deficiency occurs.
- the hot pressing is performed in a vacuum or an inert atmosphere, and depending on the size of the sintered body, the pressing pressure is preferably 275 kgf / cm 2 or more and the sintering time is preferably 2 hours or more.
- atmospheric sintering (secondary sintering) is performed at 1350 ° C. or higher.
- air sintering means sintering without pressure in the air or in an atmosphere containing 20% or more of oxygen.
- secondary sintering By carrying out secondary sintering at 1350 ° C. or higher after hot pressing, a high-density and white sintered body can be obtained. In addition, this can also suppress color unevenness and density variation in the sintered body surface.
- the sintering time is preferably 5 hours or longer.
- the method for producing a MgAl 2 O 4 sintered body according to the embodiment of the present invention includes hot pressing the MgAl 2 O 4 powder so that the relative density (initial density) is 79% or more and less than 90%, and then air sintering.
- the relative density is 90% or more.
- the initial density is less than 79%, the density is not sufficiently increased even by the subsequent atmospheric sintering, while if the initial density is 90% or more, color unevenness due to oxygen deficiency occurs.
- a sufficiently high density may be obtained by performing atmospheric sintering at a relatively high temperature after that, while the initial density is 79% or more.
- the temperature during atmospheric sintering is low, the density may not be sufficiently increased.
- atmospheric sintering (secondary sintering) is performed to make the relative density 90% or more.
- the relative density is set to 79% or more and less than 90% by sintering by hot pressing (oxygen-free atmosphere), and then the relative density is set to 90% or more by sintering in air (oxygen atmosphere).
- a white MgAl 2 O 4 sintered body can be obtained.
- the MgAl 2 O 4 sintered body can be obtained by the above method, when this is used for a sputtering target, after cutting the end of the MgAl 2 O 4 sintered body obtained above, By polishing the surface and finishing to a target shape, a sputtering target of MgAl 2 O 4 sintered body can be produced.
- MgAl 2 O 4 powder having a purity of 99.99% or more is prepared.
- MgO powder having a particle size of 0.5 ⁇ m and a purity of 99.99% or more and Al 2 O 3 powder having a particle size of 0.1 ⁇ m and a purity of 99.99% or more were prepared.
- 29L g of MgO powder and 736.8 g of Al 2 O 3 powder are put into a resin pod with a capacity of 5 L, 4 kg of Al 2 O 3 balls (purity 99.5%, ⁇ 3 mm), 1000 cc of pure water Then, 1000 cc of EL grade ethanol was added and mixed for 2 hours at a rotation speed of 100 rpm. After mixing, it was placed in a Teflon (registered trademark) coated stainless steel vat and dried.
- Teflon registered trademark
- FIG. 1 shows X-ray diffraction peaks before and after synthesis. From FIG. 1, before the synthesis, MgO is comprised in Mg (OH) 2, it is found that is a mixture of Mg (OH) 2 and Al 2 O 3. On the other hand, it can be seen that after the synthesis is in the MgAl 2 O 4.
- the obtained powder after synthesis was wet-ground by an SC mill using Al 2 O 3 balls ( ⁇ 1 mm) to a particle size of 0.5 ⁇ m.
- sintering tests were performed using the above powder.
- an MgAl 2 O 4 sintered body having a relative density of 90% or more can be obtained by performing atmospheric sintering at a relatively high temperature (Examples). 1) In addition, even if the sintered body has an initial density of 79% or more, an MgAl 2 O 4 sintered body having a relative density of 90% or more may not be obtained at a relatively low temperature of atmospheric sintering. (Comparative Example 29).
- FIG. 7 shows the relationship between the relative density of the MgAl 2 O 4 sintered body and L *. As shown in FIG. 7, the color becomes black when the relative density is increased, and the relative density cannot be increased when the color is white. It can also be seen that there is a correlation between the color of the MgAl 2 O 4 sintered body and the relative density even in a region where the relative density is as high as 98% or more.
- FIG. 8 shows the relationship between the initial density (relative density after hot pressing) and the relative density after atmospheric sintering for each sintering temperature in atmospheric sintering.
- the sputtering target using the MgAl 2 O 4 sintered body according to the embodiment of the present invention has a relative density of 90% or more, and L * in the L * a * b * color system is 90 or more. . Sputtering using such a target makes it possible to improve the quality of the sputtered film (for example, improve the uniformity of the film thickness and suppress the generation of particles).
- the sputtering target according to the embodiment of the present invention is useful for forming an MgAl 2 O 4 film as an etching stopper layer used for forming a three-dimensional structure such as a memory element, for example.
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Abstract
Description
1)相対密度が90%以上であり、且つ、L*a*b*表色系におけるL*が90以上であることを特徴とするMgAl2O4焼結体、
2)前記相対密度の面内分布が±0.2%以内であることを特徴とする上記1)記載のMgAl2O4焼結体、
3)前記L*の面内分布が±3以内であることを特徴とする上記1)記載のMgAl2O4焼結体、
4)不純物濃度が100wtppm未満であることを上記1)~3)のいずれか一に記載のMgAl2O4焼結体、
5)上記1)~4)のいずれか一に記載するMgAl2O4焼結体を用いたスパッタリングターゲット、である。
また、本発明の実施形態は、
6)上記1)~4)のいずれか一に記載のMgAl2O4焼結体の製造方法であって、MgAl2O4粉末を1150~1300℃でホットプレスした後、1350℃以上で大気焼結することを特徴とするMgAl2O4焼結体の製造方法、
7)上記1)~4)のいずれか一に記載のMgAl2O4焼結体の製造方法であって、MgAl2O4粉末をホットプレスして相対密度を79%以上90%未満とした後、大気焼結して相対密度を90%以上とすることを特徴とするMgAl2O4焼結体の製造方法、である。
本発明の実施形態に係るL*は、焼結体表面の中心部及び端部についてL*を測定し、それらの平均値をとする。なお、端部については、極端な端を避けるため、端から10mm程度の間隔を空けて測定する。具体的には、円盤型の焼結体(スパッタリングターゲット)の場合、表面の中心と、その中心と通り90度に交わる二本の線分の端部4箇所を測定箇所とし、合計5か所の平均値とする。また、矩形型の焼結体(スパッタリングターゲット)の場合、表面の中心と、その中心を通り、且つ各辺の中心を通る、90度に交わる二本の線分の端部4箇所、並びに、表面の4箇所の角部、合計9箇所の平均とする。なお、測定箇所は、これ以上増やしてもよい。
相対密度の面内分布は、焼結体の面内(スパッタリングターゲットに加工した場合、スパッタされる面に相当)を、図5に示されるように十字状にそれぞれ9箇所、等間隔に計17箇所(中心で互いに交差するため、1点)の相対密度を測定して、相対密度の面内分布を求める。
前記L*の面内分布も、相対密度の面内分布と同様に、焼結体の面内(スパッタリングターゲットに加工した場合、スパッタされる面内に相当)を、図4に示されるように、十字状にそれぞれ9箇所、等間隔に計17箇所(中心で互いに交差するため、1点)のL*を測定して、L*の面内分布を求める。
ホットプレス温度が1150℃未満であると、その後の大気焼結によっても、十分に密度が上がらず、一方、ホットプレス温度が1300℃以上であると、酸素欠損による色ムラが生じるためである。また、ホットプレスは真空又は不活性雰囲気で行い、また、焼結体の大きさにもよるが、プレス圧は、275kgf/cm2以上、焼結時間は2時間以上とするのが好ましい。
但し、初期密度が79%未満であっても、その後、比較的高い温度で大気焼結を行うことで十分に高い密度を得ることができる場合があり、一方、初期密度が79%以上であっても、大気焼結時の温度が低いと、十分に密度を上げることができない場合がある。
はじめに純度99.99%以上のMgAl2O4粉を作製する。原料として粒度が0.5μm、純度99.99%以上のMgO粉と、粒度が0.1μm、純度が99.99%以上のAl2O3粉を準備した。それを容量5Lの樹脂製ポッドに、MgO粉を291.2g、Al2O3粉を736.8g投入し、さらにAl2O3ボール(純度99.5%、φ3mm)を4kg、純水1000cc、ELグレードのエタノールを1000cc投入し、回転数100rpmで2時間混合した。混合後、テフロン(登録商標)コートされたステンレスのバットに入れて乾燥した。
以下、実施例および比較例では、上記の粉を用いて焼結試験を行った。
内径φ32mmのステンレス製のダイスに上記MgAl2O4粉を充填し、大気中で面圧200kgf/cm2でプレスした。その後、176MPaでCIPを行った。CIP後の相対密度は53%程度であった。以上の結果を表1に示す。なお、比較例1~3は同一の条件の下、複数回に分けて処理したものである。なお、実施例、比較例において、L*の測定には日本電色工業(株)製のNF333(JIS Z 8722準拠の光学系仕様)を使用した。
内径φ30mmのカーボン製ダイスに上記MgAl2O4粉を充填し、真空中で1150℃、1200℃、1220℃、1250℃、1270℃、1320℃、1400℃の7温度条件で3時間、ホットプレスを行った。プレス圧力は275kgf/cm2である。その結果を図2に示す。ホットプレス温度が1150~1270℃までは白色、1320℃で若干灰色がかり、1400℃では黒くなった。相対密度と比較すると、96%程度から灰色かがっていた。密度分布およびL*の分布はサンプルが小さいため測定していない。以上の結果を表1に示す。なお、各温度条件において複数の比較例があるが、これは同一の条件の下、複数回に分けて処理したものである。
同じ原料を用い、内径φ480mmのカーボン製ダイスにおいても試験を行った。内径φ480mmのカーボン製ダイスに上記MgAl2O4粉を充填し、真空中で1260℃、1300℃、1320℃、1330℃、1400℃の5温度条件で5時間、ホットプレスを行った。プレス圧力は275kgf/cm2である。図3にその結果を示す。ホットプレス温度が1260℃では白色になるが、1300~1330℃は灰色が混じり、1400℃では黒と白の斑になった。また、相対密度が90%程度から灰色が混ざってくる。このように相対密度が90%程度でも灰色が混じり、さらに密度を上げると黒くなる。焼結体の径がφ30mm程度の小口径では出にくいが、φ480mmの大型品になると、色ムラとなって現れやすい。なお、カーボンダイスは、φ480mmであるが、ホットプレス後は、ホットプレス温度によらずφ479mm程度になった。
No.1(比較例1~3)の焼結体をそれぞれ大気焼結(二次焼結)した。焼結温度は、1350℃、1400℃、1450℃であり、焼結時間は5時間とした。初期密度が79%以下の場合には、その後大気焼結しても、相対密度90%以上のMgAl2O4焼結体を得ることはできなかった。
No.2(比較例4~7、9~19)の焼結体をそれぞれ大気焼結(二次焼結)した。焼結温度は、1350℃、1400℃、1450℃であり、焼結時間は5時間とした。その結果、焼結体の相対密度は90%以上であり、且つ、L*は90以上と、所望の焼結体が得られた(実施例1~8)。一方、初期(ホットプレス後)の状態で灰色もしくは黒い焼結体は、大気焼結しても白色になることはなかった(比較例31~34)。また、初期密度が79%未満の焼結体は、相対密度90%以上のMgAl2O4焼結体を得ることは困難であった(比較例28、30)。
No.3(比較例20)の焼結体を、1460℃、5時間、大気雰囲気で焼結した。その結果、MgAl2O4焼結体の相対密度は96%、且つ、L*は99.4と所望の焼結体が得られた。また、焼結体面内の密度分布は±0.1であり、L*の面内分布は±0.5とバラツキの小さいものが得られた。また、このMgAl2O4焼結体を加工してスパッタリングターゲットにし、スパッタしたところ、300mmウエハー上での膜厚分布は3%と向上していた。スパッタ前のターゲットのL*と相対密度の面内分布を調査したものが、それぞれ図6である。50mmおきに計17点測定した結果、L*=99.4±0.3、相対密度=96.0±0.1%であった。なお、焼結体の直径は、φ478.8mmが、φ456.2mmに収縮していた。
図7に示すように相対密度を上げようとすると色は黒くなり、色を白くしようとすれば相対密度を上げられないというトレードオフの関係にある。また、相対密度が98%以上と高い領域でも、MgAl2O4焼結体の色と相対密度に相関があることが分かる。
また、図8に大気焼結の各焼結温度に対する初期密度(ホットプレス後の相対密度)と大気焼結後の相対密度の関係を示す。
Claims (7)
- 相対密度が90%以上であり、且つ、L*a*b*表色系におけるL*が90以上であることを特徴とするMgAl2O4焼結体。
- 前記相対密度の面内分布が±0.2%以内であることを特徴とする請求項1記載のMgAl2O4焼結体。
- 前記L*の面内分布が±3以内であることを特徴とする請求項1記載のMgAl2O4焼結体。
- 不純物濃度が100wtppm未満であることを請求項1~3のいずれか一項に記載のMgAl2O4焼結体。
- 請求項1~4のいずれか一項に記載するMgAl2O4焼結体を用いたスパッタリングターゲット。
- 請求項1~4のいずれか一項に記載のMgAl2O4焼結体の製造方法であって、MgAl2O4粉末を1150~1300℃でホットプレスした後、1350℃以上で大気焼結することを特徴とするMgAl2O4焼結体の製造方法。
- 請求項1~4のいずれか一項に記載のMgAl2O4焼結体の製造方法であって、MgAl2O4粉末をホットプレスして相対密度を79%以上90%未満とした後、大気焼結して相対密度を90%以上とすることを特徴とするMgAl2O4焼結体の製造方法。
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