WO2019187244A1 - Cible de pulvérisation - Google Patents

Cible de pulvérisation Download PDF

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Publication number
WO2019187244A1
WO2019187244A1 PCT/JP2018/036509 JP2018036509W WO2019187244A1 WO 2019187244 A1 WO2019187244 A1 WO 2019187244A1 JP 2018036509 W JP2018036509 W JP 2018036509W WO 2019187244 A1 WO2019187244 A1 WO 2019187244A1
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Prior art keywords
powder
sputtering
sputtering target
target
carbon
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PCT/JP2018/036509
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English (en)
Japanese (ja)
Inventor
祐樹 古谷
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Ｊｘ金属株式会社
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Application filed by Ｊｘ金属株式会社 filed Critical Ｊｘ金属株式会社
Priority to CN201880091597.1A priority Critical patent/CN111886359A/zh
Priority to SG11202009357PA priority patent/SG11202009357PA/en
Publication of WO2019187244A1 publication Critical patent/WO2019187244A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C19/00—Alloys based on nickel or cobalt
    • C22C19/07—Alloys based on nickel or cobalt based on cobalt
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering

Definitions

  • the present invention relates to a sputtering target, particularly a ferromagnetic material sputtering target used for forming a magnetic recording layer of a hard disk adopting a perpendicular magnetic recording method, and relates to a ferromagnetic material sputtering with less generation of particles when sputtering with a magnetron sputtering apparatus.
  • sputtering target is simply abbreviated as “target”, but it means the substantially same thing. I will tell you just in case.
  • a material based on Co, Fe, or Ni which is a ferromagnetic metal, is used as a magnetic thin film material for recording.
  • a Co—Cr-based or Co—Cr—Pt-based ferromagnetic alloy containing Co as a main component has been used for a recording layer of a hard disk employing an in-plane magnetic recording method.
  • a composite material composed of a Co—Cr—Pt ferromagnetic alloy containing Co as a main component and a non-magnetic inorganic material is often used for a recording layer of a hard disk employing a perpendicular magnetic recording method that has been put into practical use in recent years. ing.
  • ruthenium (Ru) alloys have excellent thermal stability, and are excellent in low resistance and barrier properties. Therefore, they are attracting attention as film forming materials for semiconductor elements, particularly as gate electrode materials and various diffusion barrier materials. Yes.
  • Patent Document 1 Japanese Patent No. 539477 discloses a sputtering target made of a metal having a composition of Cr of 20 mol% or less, Ru of 0.5 mol% or more and 30 mol% or less, and the balance of Co.
  • a ferromagnetic material sputtering target having (C) is disclosed.
  • Such a sputtering target becomes a target with a large leakage magnetic flux, and when used in a magnetron sputtering apparatus, the ionization promotion of the inert gas proceeds efficiently, and there is an effect that a stable discharge can be obtained.
  • Patent Document 1 does not sufficiently study the generation of impurities and particles contained in a sputtering target containing Ru.
  • Patent Document 2 discloses a ruthenium alloy sintered body target obtained by sintering a mixed powder of ruthenium powder and metal powder that is easier to form an oxide than ruthenium, and excludes gas components.
  • the purity of the target is 99.95 wt% or more
  • a metal that is easier to form an oxide than ruthenium is contained at 5 at% to 60 at%
  • the relative density is 99% or more
  • the oxygen content as an impurity is 1000 ppm or less.
  • a featured ruthenium alloy sputtering target is disclosed.
  • the reason why the oxygen content as an impurity is 1000 ppm or less is that the sputtering target with an oxygen content exceeding 1000 ppm has a problem that the arcing and particle generation at the time of sputtering becomes remarkable and the quality of film formation is deteriorated. Because there is.
  • Patent Document 2 a certain effect was obtained with respect to suppressing the generation of particles during sputtering by setting the oxygen content as an impurity to 1000 ppm or less.
  • the demand for a sputtering target with a small number of generated particles is increasing, and there are some aspects that cannot be handled by the technique disclosed in Patent Document 2. The same applies to the invention according to Patent Document 1.
  • an object of the present invention is to provide a sputtering target having a small number of generated particles throughout the life of the sputtering target by controlling impurities such as oxygen and carbon for the sputtering target containing Co and Ru.
  • the present inventor found that particles generated during sputtering were more carbon than impurities as impurities. I found that the influence was greater. Further, it has been found that the generation of particles can be extremely effectively suppressed throughout the life of the sputtering target by setting the content of carbon as an impurity to a certain amount or less. The present invention has been completed based on such findings.
  • the present invention is specified as follows.
  • Co is 50 to 90 at%
  • Ru is 10 to 50 at%
  • the balance is a sputtering target consisting of impurities, oxygen of which exceeds 10,000 wtppm and carbon of 50 wtppm or less.
  • Sputtering target characterized by the above.
  • a sputtering target having excellent film forming properties capable of effectively suppressing the generation of particles during sputtering throughout the life of the sputtering target.
  • the main components constituting the sputtering target of the present invention are Co of 50 to 90 at%, Ru of 10 to 50 at%, the balance being impurities, of which oxygen exceeds 10,000 wtppm and carbon is 50 wtppm or less. It is.
  • Co and Ru are added as essential components. If the amount of Co is 50 at% or more, ferromagnetism as a whole sputtering target can be imparted. On the other hand, if the amount of Co exceeds 90 at%, Ru is relatively small, and the effect of improving the performance by adding Ru is not desirable. Regarding the above-mentioned Ru, since the effect of the magnetic thin film can be obtained from 10 at% or more, the lower limit value is set as described above. On the other hand, if the amount of Ru is too large, it is not preferable in terms of characteristics as a magnetic material, so the upper limit is set to 50 at%.
  • the remaining part of the sputtering target becomes impurities.
  • oxygen and carbon have the most influence on the performance of the sputtering target.
  • oxygen has an effect of suppressing particles by setting it to 1000 ppm or less.
  • the control of the amount of carbon in a sputtering target containing Co and Ru is much higher. Since it is important, in the present invention, the amount of oxygen exceeds 10,000 wtppm. If the amount of oxygen exceeds 10,000 wtppm, the effect of particle suppression by making the amount of carbon 50 wtppm or less will be more remarkable.
  • the carbon content is 50 wtppm or less.
  • the carbon content is 50 wtppm or less. If the carbon content is 50 wtppm or less, not only can the number of particles generated be dramatically reduced, but also the increase in the number of particles generated can be extremely effectively suppressed throughout the life of the sputtering target. From this viewpoint, the amount of carbon is preferably 30 wtppm or less, more preferably 20 wtppm or less, and even more preferably 10 wtppm or less.
  • the carbon contained in the sputtering target includes not only those contained in the raw material powder itself but also those diffused from the graphite die case when the raw material powder is sintered. In particular, since carbon easily diffuses into Ru, the amount of carbon in the sputtering target often increases.
  • the concentration of impurities can be measured by an inert gas melting method.
  • the carbon concentration which is important in the present invention is obtained by collecting a chip of diameter 100 mm ⁇ thickness 0.1 mm from a center of a circle of each sputtering target with a lathe, and using this sample as a carbon analyzer [manufactured by LECO, CSLS600] Can be measured by an inert gas melting method.
  • the oxygen concentration can be measured by an inert gas melting method using the oxygen / nitrogen simultaneous analyzer [manufactured by LECO, TC-600].
  • the sputtering target of the present invention can contain one or more elements selected from the group consisting of Cr, Ti, Si, Ta, and B, and oxygen present in the form of an oxide.
  • the sputtering target of the present invention can contain one or more elements selected from the group consisting of Cr, Ti, Si, Ta, and B, and oxygen present in the form of an oxide.
  • each of them is preferably 1 at% or more.
  • a Cr, Ti, Si, Ta, or B powder, or a Cr, Ti, Si, Ta, or B oxide powder is used as a raw material powder when a sputtering target is manufactured. What is necessary is just to add.
  • the magnetic recording film having a granular structure particularly, a characteristic suitable for a material of a recording film of a hard disk drive adopting a perpendicular magnetic recording system.
  • Cr has the effect of demagnetizing without hindering the hcp structure of Co in the film
  • TiO 2 has the effect of improving the separation between particles in the film. Note that oxygen present in the form of an oxide is not oxygen as an impurity.
  • the relative density of the sputtering target of the present invention is preferably 98.0% or more. In general, it is known that a higher density target can reduce the amount of particles generated during sputtering. Similarly, in the present invention, it is preferable to have a high density. From the above viewpoint, the relative density of the target is more preferably 99.0% or more, and even more preferably 99.5% or more.
  • the relative density is a value obtained by dividing the actually measured density of the target by the calculated density (also called the theoretical density).
  • the calculation density is a density when it is assumed that the constituent components of the target are mixed without diffusing or reacting with each other, and is calculated by the following equation.
  • Calculated density ⁇ (Molecular weight of constituent component ⁇ Molar ratio of constituent component) / ⁇ (Molecular weight of constituent component ⁇ Molar ratio of constituent component / Document value density of constituent component)
  • ⁇ means taking the sum for all the constituent components of the target.
  • the sputtering target of the present invention can contain one or more inorganic materials selected from carbon, oxide, nitride, carbide and carbonitride.
  • the magnetic recording film having a granular structure, particularly, a characteristic suitable for a material of a recording film of a hard disk drive adopting a perpendicular magnetic recording system is provided.
  • the production method of the tungsten sputtering target of the present invention is not particularly limited as long as it has the above-mentioned characteristics, but as a means for obtaining a sputtering target having such characteristics, powder sintering
  • powder sintering For example, it can be produced by the following method. First, particle powder in which Co and Ru are dispersed with each other is prepared, and these are weighed so as to have a desired target composition to obtain a powder for sintering. This can be sintered by hot pressing or the like to produce the sputtering target of the present invention.
  • Co metal powder and Ru metal powder are used as starting materials. It is desirable to use Co metal powder and Ru metal powder having a maximum particle size of 150 ⁇ m or less, more preferably 50 ⁇ m or less, and even more preferably 20 ⁇ m or less. Furthermore, when using metal oxide powder, it is desirable to use a powder having a maximum particle size of 100 ⁇ m or less, more preferably 20 ⁇ m or less, and even more preferably 5 ⁇ m or less. In addition, since it will be easy to aggregate when a particle size is too small, it is more desirable to use a 0.1 micrometer or more thing.
  • the above raw material powder is weighed so as to have a desired target composition, and is mixed by pulverization using a known method such as a ball mill.
  • the sintering powder thus obtained is molded and sintered with a hot press.
  • a plasma discharge sintering method or a hot isostatic pressing method can also be used.
  • the holding temperature at the time of sintering is preferably set to the lowest temperature in the temperature range where the target is sufficiently densified. Depending on the composition of the target, it is often in the temperature range of 900 to 1300 ° C.
  • the sintered body for a ferromagnetic material sputtering target can be manufactured by the above process.
  • alumina may be applied to a die case.
  • the sputtering target according to the present invention can be manufactured by molding the obtained sintered body into a desired shape using a lathe or the like. Although there is no restriction
  • the sputtering target according to the present invention is particularly useful as a sputtering target used for forming a granular structure magnetic thin film.
  • Example 1 Example 2, Example 3 and Comparative Example 1
  • a Co powder having an average particle diameter of 3 ⁇ m a Cr powder having an average particle diameter of 3 ⁇ m, a Ru powder having an average particle diameter of 3 ⁇ m, and a TiO 2 powder having an average particle diameter of 1 ⁇ m were prepared.
  • Co powder, Cr powder, Ru powder, and TiO 2 powder were enclosed in a ball mill pot with a capacity of 10 liters together with zirconia balls as a grinding medium, and rotated and mixed for 20 hours.
  • This mixed powder was filled in a carbon mold, and in each of the examples, under the conditions of a pressure of 30 MPa, a temperature of 1100 ° C., 1000 ° C., 900 ° C., a holding time of 2 hours, and a comparative example 1 of a temperature of 1100 ° C. Then, hot pressing was performed for 2 hours to obtain a sintered body. At the time of sintering, alumina was applied to the die case for Example 1, but no alumina was applied to the die case for Example 2, Example 3, and Comparative Example 1, and the raw material powder and the die case were not separated. Further, these sintered bodies were ground using a surface grinder to obtain a disk-shaped target having a diameter of 180 mm and a thickness of 5 mm.
  • the carbon concentration is obtained by using a lathe to collect chips having a diameter of 100 mm and a thickness of 0.1 mm from the center of the circle of each sputtering target, and using this sample with a carbon analyzer [manufactured by LECO, CSLS600] as an inert gas. It was measured by the melting method. The oxygen concentration was measured by an inert gas melting method using the above sample using an oxygen / nitrogen simultaneous analyzer [LE-CO, TC-600].
  • this target was attached to a DC magnetron sputtering apparatus, and sputtering was performed.
  • the sputtering conditions were a sputtering power of 1.0 kW, an Ar gas pressure of 1.7 Pa, a sputtering time of 20 seconds, and sputtering onto a 4-inch diameter silicon substrate.
  • the number of particles adhering to the substrate was measured with a particle counter. This sputtering was performed so that the target life was 3 kWhr or more, and the number of particles generated at each time point was measured.
  • Co powder having an average particle diameter of 3 ⁇ m, B powder having an average particle diameter of 3 ⁇ m, Ru powder having an average particle diameter of 3 ⁇ m, and SiO 2 powder having an average particle diameter of 1 ⁇ m were prepared.
  • Co powder, B powder, Ru powder, and SiO 2 powder were encapsulated in a ball mill pot with a capacity of 10 liters together with zirconia balls as a grinding medium, and rotated and mixed for 20 hours.
  • This mixed powder was filled in a carbon mold and hot-pressed in a vacuum atmosphere under a pressure of 30 MPa and at a temperature of 1100 ° C. and a holding time of 2 hours to obtain a sintered body.
  • alumina was applied to the die case in Example 4, but alumina was not applied to the die case in Comparative Example 2, and the raw material powder and the die case were not separated. Further, these sintered bodies were ground using a surface grinder to obtain a disk-shaped target having a diameter of 180 mm and a thickness of 5 mm.
  • the carbon concentration is obtained by using a lathe to collect chips having a diameter of 100 mm and a thickness of 0.1 mm from the center of the circle of each sputtering target, and using this sample with a carbon analyzer [manufactured by LECO, CSLS600] as an inert gas. It was measured by the melting method. The oxygen concentration was measured by an inert gas melting method using the above sample using an oxygen / nitrogen simultaneous analyzer [LE-CO, TC-600].
  • this target was attached to a DC magnetron sputtering apparatus, and sputtering was performed.
  • the sputtering conditions were a sputtering power of 1.0 kW, an Ar gas pressure of 1.7 Pa, a sputtering time of 20 seconds, and sputtering onto a 4-inch diameter silicon substrate.
  • the number of particles adhering to the substrate was measured with a particle counter. This sputtering was performed so that the target life was 3 kWhr or more, and the number of particles generated at each time point was measured.
  • Table 1 shows the results of Example 4 and Comparative Example 2.
  • Example 5 As a raw material powder, a Co powder having an average particle diameter of 3 ⁇ m, a Ru powder having an average particle diameter of 3 ⁇ m, and a CoO powder having an average particle diameter of 1 ⁇ m were prepared. These powders were weighed at a weight ratio of 72.82 wt% Co powder, 15.61 wt% Ru powder, and 11.57 wt% CoO powder so that the composition of the target was 80 Co-10 Ru-10 CoO (mol%).
  • Co powder, Ru powder, and CoO powder were sealed in a ball mill pot with a capacity of 10 liters together with zirconia balls as a grinding medium, and rotated and mixed for 20 hours.
  • This mixed powder was filled in a carbon mold and hot-pressed in a vacuum atmosphere under a pressure of 30 MPa and at a temperature of 1100 ° C. and a holding time of 2 hours to obtain a sintered body.
  • alumina was applied to the die case in Example 5, but in Comparative Example 3, alumina was not applied to the die case, and the raw material powder and the die case were not separated. Further, these sintered bodies were ground using a surface grinder to obtain a disk-shaped target having a diameter of 180 mm and a thickness of 5 mm.
  • the carbon concentration is obtained by using a lathe to collect chips having a diameter of 100 mm and a thickness of 0.1 mm from the center of the circle of each sputtering target, and using this sample with a carbon analyzer [manufactured by LECO, CSLS600] as an inert gas. It was measured by the melting method. The oxygen concentration was measured by an inert gas melting method using the above sample using an oxygen / nitrogen simultaneous analyzer [LE-CO, TC-600].
  • this target was attached to a DC magnetron sputtering apparatus, and sputtering was performed.
  • the sputtering conditions were a sputtering power of 1.0 kW, an Ar gas pressure of 1.7 Pa, a sputtering time of 20 seconds, and sputtering onto a 4-inch diameter silicon substrate.
  • the number of particles adhering to the substrate was measured with a particle counter. This sputtering was performed so that the target life was 3 kWhr or more, and the number of particles generated at each time point was measured.
  • Example 5 The results of Example 5 and Comparative Example 3 are shown in Table 1.
  • Example 6 and Comparative Example 4 As raw material powders, Co powder having an average particle diameter of 3 ⁇ m, Ru powder having an average particle diameter of 3 ⁇ m, and Cr 2 O 3 powder having an average particle diameter of 1 ⁇ m were prepared. The weight of these powders was 35.70 wt% Co powder, 55.10 wt% Ru powder, and 9.20 wt% Cr 2 O 3 powder so that the target composition would be 50 Co-45Ru-5Cr 2 O 3 (mol%). Weighed by ratio.
  • the Co powder, the Ru powder and the Cr 2 O 3 powder were enclosed in a ball mill pot having a capacity of 10 liters together with zirconia balls as a grinding medium, and rotated and mixed for 20 hours.
  • This mixed powder was filled in a carbon mold and hot-pressed in a vacuum atmosphere under a pressure of 30 MPa and at a temperature of 1100 ° C. and a holding time of 2 hours to obtain a sintered body.
  • alumina was applied to the die case for Example 6, but alumina was not applied to the die case for Comparative Example 4, and the raw material powder and the die case were not separated. Further, these sintered bodies were ground using a surface grinder to obtain a disk-shaped target having a diameter of 180 mm and a thickness of 5 mm.
  • the carbon concentration is obtained by using a lathe to collect chips having a diameter of 100 mm and a thickness of 0.1 mm from the center of the circle of each sputtering target, and using this sample with a carbon analyzer [manufactured by LECO, CSLS600] as an inert gas. It was measured by the melting method. The oxygen concentration was measured by an inert gas melting method using the above sample using an oxygen / nitrogen simultaneous analyzer [LE-CO, TC-600].
  • this target was attached to a DC magnetron sputtering apparatus, and sputtering was performed.
  • the sputtering conditions were a sputtering power of 1.0 kW, an Ar gas pressure of 1.7 Pa, a sputtering time of 20 seconds, and sputtering onto a 4-inch diameter silicon substrate.
  • the number of particles adhering to the substrate was measured with a particle counter. This sputtering was performed so that the target life was 3 kWhr or more, and the number of particles generated at each time point was measured.
  • Example 6 The results of Example 6 and Comparative Example 4 are shown in Table 1.
  • Comparative Example 3 since the amount of carbon was 100 wtppm, the number of particles increased explosively after the start of sputtering. In Comparative Example 4, since the carbon content was 140 wtppm, the number of particles increased explosively after the start of sputtering.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)

Abstract

Cette invention concerne une cible de pulvérisation avec laquelle un petit nombre de particules est généré pendant toute la durée de vie de la cible de pulvérisation. Cette cible de pulvérisation, qui comprend 50 à 90 % at. de Co et 10 à 50 % at. de Ru, le reste étant les inévitables impuretés, est caractérisée en ce que, parmi les impuretés, l'oxygène dépasse 10000 ppm en poids et le carbone n'est pas supérieur à 50 ppm en poids.
PCT/JP2018/036509 2018-03-27 2018-09-28 Cible de pulvérisation WO2019187244A1 (fr)

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Application Number Priority Date Filing Date Title
CN201880091597.1A CN111886359A (zh) 2018-03-27 2018-09-28 溅射靶
SG11202009357PA SG11202009357PA (en) 2018-03-27 2018-09-28 Sputtering target

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JP2018-060365 2018-03-27
JP2018060365A JP6971901B2 (ja) 2018-03-27 2018-03-27 スパッタリングターゲット

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JP (1) JP6971901B2 (fr)
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SG (1) SG11202009357PA (fr)
TW (1) TWI668311B (fr)
WO (1) WO2019187244A1 (fr)

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JP2022042874A (ja) * 2020-09-03 2022-03-15 Ｊｘ金属株式会社 スパッタリングターゲット、その製造方法、及び磁気記録媒体の製造方法

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CN104032270A (zh) * 2014-06-12 2014-09-10 贵研铂业股份有限公司 一种大尺寸钌基合金溅射靶材及其制备方法
WO2017141557A1 (fr) * 2016-02-19 2017-08-24 Ｊｘ金属株式会社 Cible de pulvérisation pour support d'enregistrement magnétique et film mince magnétique

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US20010047838A1 (en) * 2000-03-28 2001-12-06 Segal Vladimir M. Methods of forming aluminum-comprising physical vapor deposition targets; sputtered films; and target constructions
US20090053089A1 (en) * 2007-08-20 2009-02-26 Heraeus Inc. HOMOGENEOUS GRANULATED METAL BASED and METAL-CERAMIC BASED POWDERS
WO2012086575A1 (fr) * 2010-12-22 2012-06-28 Jx日鉱日石金属株式会社 Cible de pulvérisation cathodique en matériau ferromagnétique
SG11201404314WA (en) * 2012-02-22 2014-10-30 Jx Nippon Mining & Metals Corp Magnetic material sputtering target and manufacturing method for same
JP5969120B2 (ja) * 2013-05-13 2016-08-17 Ｊｘ金属株式会社 磁性薄膜形成用スパッタリングターゲット
KR20160050485A (ko) * 2014-10-29 2016-05-11 희성금속 주식회사 루테늄 또는 루테늄 합금계 스퍼터링 타겟의 제조방법 및 이로부터 제조된 루테늄 또는 루테늄 합금계 스퍼터링 타겟
SG10201510661RA (en) * 2015-12-24 2017-07-28 Heraeus Materials Singapore Pte Ltd Sputtering Target Of Ruthenium-Containing Alloy And Production Method Thereof

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CN104032270A (zh) * 2014-06-12 2014-09-10 贵研铂业股份有限公司 一种大尺寸钌基合金溅射靶材及其制备方法
WO2017141557A1 (fr) * 2016-02-19 2017-08-24 Ｊｘ金属株式会社 Cible de pulvérisation pour support d'enregistrement magnétique et film mince magnétique

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SG11202009357PA (en) 2020-10-29
CN111886359A (zh) 2020-11-03
TWI668311B (zh) 2019-08-11
JP2019173067A (ja) 2019-10-10
JP6971901B2 (ja) 2021-11-24
TW201942376A (zh) 2019-11-01

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