WO2019184345A1 - 发光器件及其制造方法、显示装置 - Google Patents

发光器件及其制造方法、显示装置 Download PDF

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Publication number
WO2019184345A1
WO2019184345A1 PCT/CN2018/113390 CN2018113390W WO2019184345A1 WO 2019184345 A1 WO2019184345 A1 WO 2019184345A1 CN 2018113390 W CN2018113390 W CN 2018113390W WO 2019184345 A1 WO2019184345 A1 WO 2019184345A1
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Prior art keywords
sub
pixel
light emitting
layer
organic light
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PCT/CN2018/113390
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English (en)
French (fr)
Inventor
徐健
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京东方科技集团股份有限公司
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Priority to US16/337,618 priority Critical patent/US11127800B2/en
Priority to JP2019570027A priority patent/JP7182569B2/ja
Publication of WO2019184345A1 publication Critical patent/WO2019184345A1/zh
Priority to US17/399,848 priority patent/US11744117B2/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/352—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels the areas of the RGB subpixels being different
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/353—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels characterised by the geometrical arrangement of the RGB subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the present disclosure relates to the field of display technologies, and in particular, to a light emitting device, a method of manufacturing the same, and a display device.
  • OLED Organic Light-Emitting Diode
  • FMM Fluorescence Metal Mask
  • An organic layer of a corresponding color is vapor-deposited in each sub-pixel.
  • the boundary of the sub-pixel light-emitting area is defined by a Pixel Define Layer (PDL) to form a sub-pixel well.
  • PDL Pixel Define Layer
  • the PPI pixels per inch
  • the sub-pixel spacing is getting smaller and smaller, but the brightness of the light is required to be higher and higher.
  • light emitted by each sub-pixel is emitted mainly in a direction perpendicular to the surface of the sub-pixel.
  • the inventors of the present disclosure have found that in each sub-pixel, a part of the light is emitted in a direction inclined with the surface of the sub-pixel. This causes a phenomenon of light mixing between adjacent sub-pixels of different colors, resulting in poor color gamut and reduced visual effects.
  • embodiments of the present disclosure provide a light emitting device to attenuate a light mixing phenomenon between adjacent sub-pixels.
  • a light emitting device includes: a pixel defining layer; a plurality of sub-pixels, each of the sub-pixels including a functional layer, the functional layer of the plurality of sub-pixels including a layer interval defined by the pixels a functional layer of the adjacent first sub-pixel and a functional layer of the second sub-pixel; and a blocking member disposed on the pixel defining layer.
  • the blocking member includes a first portion and a second portion, the material of the first portion being the same as the material of at least a portion of the functional layer of the first sub-pixel, the material of the second portion At least a portion of the functional layers of the second sub-pixel are of the same material, wherein the first portion and the second portion are superimposed on the pixel defining layer.
  • the functional layer comprises a light emitting layer.
  • the functional layer further includes an electron transport layer and a hole transport layer, the light emitting layer being located between the electron transport layer and the hole transport layer; in the first portion and the first Where both parts include the same portion as the material of the electron transport layer, the first portion includes the same portion as the material of the electron transport layer and the second portion includes the electron The same portion of the material of the transport layer is spaced apart; in the case where the first portion and the second portion each include the same portion of the material of the hole transport layer, the first portion includes and The portion of the hole transport layer having the same material is spaced apart from the portion of the second portion that is the same as the material of the hole transport layer.
  • the first portion includes a portion identical to a material of the electron transport layer, the hole transport layer, and the light emitting layer of the first sub-pixel, the second portion including the second sub-pixel
  • the materials of the electron transport layer, the hole transport layer, and the light-emitting layer are respectively the same.
  • the barrier comprises an insulating layer.
  • the slope angle ⁇ formed by the blocking member on the pixel defining layer ranges from 1° ⁇ 60°.
  • the first portion is a portion of the functional layer of the first sub-pixel extending above the pixel defining layer
  • the second portion is extending to a functional layer of the second sub-pixel The pixel defines the portion above the layer.
  • the first sub-pixel is a red sub-pixel, and the second sub-pixel is a green sub-pixel or a blue sub-pixel; or The first sub-pixel is a green sub-pixel, and the second sub-pixel is a blue sub-pixel.
  • a sum of areas of a functional layer of the blue sub-pixel and an extended portion of a functional layer of the blue sub-pixel > a functional layer of the red sub-pixel and The sum of the areas of the extended portions of the functional layers of the red sub-pixels > the sum of the areas of the functional layers of the green sub-pixels and the extended portions of the functional layers of the green sub-pixels.
  • the thickness of the blocking member ranges from to In a case where the first sub-pixel is a green sub-pixel and the second sub-pixel is a blue sub-pixel, the thickness of the blocking member ranges from to Alternatively, in a case where the first sub-pixel is a red sub-pixel and the second sub-pixel is a blue sub-pixel, the thickness of the blocking component ranges from to
  • a light emitting device including: a plurality of driving transistors each including a first electrode; a substrate on one side of the plurality of driving transistors; and a plurality of organic light emitting a diode on another side of the plurality of driving transistors opposite to the substrate; each of the organic light emitting diodes includes a second electrode, a third electrode, and a functional layer; and the second electrode and the first electrode are electrically Connecting, at least a portion of the functional layer is located between the second electrode and the third electrode, the plurality of organic light emitting diodes including at least a first organic light emitting diode and a second organic light emitting diode spaced apart by a pixel defining layer
  • the functional layer includes at least a light emitting layer having an area larger than an area of the second electrode, and a blocking member located on a side of the pixel defining layer away from the driving transistor, the blocking member being a projection on the substrate is spaced apart from a
  • the first electrode is a source
  • the driving transistor further includes a gate, a drain, and a semiconductor layer; wherein a projection of the semiconductor layer on the substrate is located at the second electrode Within the projection on the substrate.
  • the functional layer further includes a hole transport layer and an electron transport layer, an area of the hole transport layer away from the side of the drive transistor being larger than a distance of the second electrode away from the drive transistor The area of one side, the area of the side of the electron transport layer remote from the driving transistor is larger than the area of the side of the second electrode remote from the driving transistor.
  • the slope angle ⁇ formed by the blocking member on the pixel defining layer ranges from 1° ⁇ 60°.
  • the blocking member includes a first portion and a second portion, the material of the first portion being the same as the material of at least a portion of the functional layer of the first organic light emitting diode, the material of the second portion being At least a portion of the functional layers of the second organic light emitting diode are of the same material, wherein the first portion and the second portion are superimposed on the pixel defining layer.
  • the first portion is a portion of a functional layer of the first organic light emitting diode that extends over the pixel defining layer
  • the second portion is a functional layer extension of the second organic light emitting diode To the portion above the pixel defining layer.
  • the first organic light emitting diode is a red organic light emitting diode
  • the second organic light emitting diode is a green organic light emitting diode or a blue organic The light emitting diode; or the first organic light emitting diode is a green organic light emitting diode, and the second organic light emitting diode is a blue organic light emitting diode.
  • the thickness of the blocking member ranges from to In the case where the first organic light emitting diode is a green organic light emitting diode and the second organic light emitting diode is a blue organic light emitting diode, the thickness of the blocking member ranges from to Alternatively, in a case where the first organic light emitting diode is a red organic light emitting diode and the second organic light emitting diode is a blue organic light emitting diode, the thickness of the blocking member ranges from to
  • a display device comprising: a light emitting device as described above.
  • a method of fabricating a light emitting device comprising: forming a pixel defining layer on an initial substrate structure, the pixel defining layer being formed with a plurality of exposed initial substrate structures Opening; forming a functional layer for the plurality of sub-pixels in the plurality of openings, and forming a barrier on the pixel defining layer.
  • the barrier is formed during formation of the functional layers of the plurality of sub-pixels, wherein the material of the barrier is the same as the material of at least a portion of the functional layers of the plurality of sub-pixels.
  • a blocking member is provided on the pixel defining layer.
  • the blocking member can block the light emitted by the first sub-pixel and the second sub-pixel from being respectively emitted above the pixel defining layer to cause a light mixing phenomenon. This can reduce the light mixing phenomenon between the adjacent first sub-pixel and the second sub-pixel, thereby improving the display effect.
  • FIG. 1 is a schematic cross-sectional view schematically showing a light emitting device according to some embodiments of the present disclosure
  • FIG. 2 is a schematic cross-sectional view schematically showing a light emitting device according to further embodiments of the present disclosure
  • FIG. 3 is a schematic cross-sectional view schematically showing a light emitting device according to further embodiments of the present disclosure
  • FIG. 4 is a top view schematically showing a light emitting device according to further embodiments of the present disclosure.
  • FIG. 5 is a flowchart illustrating a method of fabricating a light emitting device according to some embodiments of the present disclosure
  • FIG. 6 is a schematic cross-sectional view schematically showing the structure of step S520 in FIG. 5 in the manufacturing process of the light emitting device according to some embodiments of the present disclosure.
  • a particular device when it is described that a particular device is located between the first device and the second device, there may be intervening devices between the particular device and the first device or the second device, or there may be no intervening devices.
  • that particular device can be directly connected to the other device without intervening devices, or without intervening devices directly connected to the other devices.
  • the inventors of the present disclosure have found that in each sub-pixel, a part of the light is emitted in a direction inclined with the surface of the sub-pixel. This causes a phenomenon of light mixing between adjacent sub-pixels of different colors, resulting in poor color gamut and reduced visual effects.
  • FIG. 1 is a schematic cross-sectional view schematically showing a light emitting device according to some embodiments of the present disclosure.
  • the light emitting device may include a pixel defining layer 2, a plurality of sub-pixels, and a blocking member 80.
  • Each sub-pixel may include a functional layer.
  • the functional layers of the plurality of sub-pixels may include a functional layer of the adjacent first sub-pixel 71 and a functional layer of the second sub-pixel 72 that are spaced apart by the pixel defining layer 2.
  • the blocking member 80 may be disposed on the pixel defining layer 2.
  • an anode including a first anode 41 for a first sub-pixel and a second anode 42 for a second sub-pixel
  • a via 5 an anode and backplane circuit are also shown in FIG. 1 (FIG.
  • the insulating layer 6 is spaced apart between them.
  • the via 5 is a via formed on the spacer insulating layer 6, and has a layer of a conductive material (for example, a metal layer) in the via.
  • the anode and backplane circuits are conducted through a layer of conductive material within vias 5.
  • FIG. 1 shows a structure in which an anode and a conductive material layer in the via 5 are integrally formed, the scope of the embodiments of the present disclosure is not limited thereto, and the anode and the conductive material layer in the via hole are not limited thereto. It may be a separately formed structure.
  • the layers of conductive material within the anode and vias can be of a different material.
  • a blocking member is provided on the pixel defining layer.
  • the blocking member can block the light emitted by the first sub-pixel and the second sub-pixel from being respectively emitted above the pixel defining layer to cause a light mixing phenomenon. This can reduce the light mixing phenomenon between the adjacent first sub-pixel and the second sub-pixel, thereby improving the display effect.
  • the slope angle ⁇ formed by the blocking member 80 on the pixel defining layer may range from 1° ⁇ 60°.
  • the slope angle ⁇ may be 10°, 20°, 30°, or 50°.
  • the slope angle may be an angle between the slope of the blocking member and the upper surface of the pixel defining layer.
  • the gradient angle ⁇ may be set to other angles as needed by those skilled in the art, and the range of the slope angle ⁇ of the embodiment of the present disclosure is not limited thereto.
  • the barrier 80 can include an insulating layer.
  • the insulating layer may include at least one of silicon dioxide and silicon nitride.
  • an embodiment in which an insulating layer is used as a stopper on a pixel defining layer is described.
  • the manner of the embodiments of the present disclosure is not limited thereto.
  • Embodiments of the present disclosure may also include embodiments that form a barrier using the same structural layer as the functional layer of the sub-pixel.
  • the barrier can include a first portion and a second portion.
  • the material of the first portion is the same as the material of at least a portion of the functional layer of the first sub-pixel.
  • the material of the second portion is the same as the material of at least a portion of the functional layer of the second sub-pixel.
  • the first portion and the second portion are superimposed on the pixel defining layer.
  • the same structural layer as that of at least a portion of the functional layers of the adjacent two sub-pixels is utilized as a barrier, and it is not necessary to introduce other material layers during the manufacturing process, which is easier to implement in the manufacturing process.
  • the first portion of the blocking member may be a portion of the functional layer of the first sub-pixel extending above the pixel defining layer
  • the second portion of the blocking member may extend to the pixel of the functional layer of the second sub-pixel Define the part above the layer.
  • the functional layer of each sub-pixel may extend over the pixel defining layer such that a portion of the functional layers of the adjacent first and second sub-pixels overlap each other on the pixel defining layer to form an overlapping portion.
  • This overlapping portion can serve as a blocking member.
  • the scope of the embodiments of the present disclosure is not limited to the extensions described herein, for example, during the manufacturing process, the functional layers of the overlapping portions may be spaced apart from the functional layers of the respective sub-pixels, respectively.
  • the functional layer can include a light emitting layer.
  • the first portion of the barrier may comprise the same portion as the material of the luminescent layer of the first sub-pixel, and the second portion of the barrier may comprise the same portion of the material of the luminescent layer of the second sub-pixel.
  • the functional layer may further include an Electro Transport Layer (ETL) and a Hole Transport Layer (HTL).
  • ETL Electro Transport Layer
  • HTL Hole Transport Layer
  • a light emitting layer is between the electron transport layer and the hole transport layer.
  • the electron transport layer, the hole transport layer, and the light-emitting layer may both be organic layers.
  • the functional layer may include other organic layers or inorganic layers in addition to at least one of the electron transport layer, the hole transport layer, and the light-emitting layer.
  • the functional layer may include an electron blocking layer or a hole blocking layer or the like. Therefore, the scope of the embodiments of the present disclosure is not limited to the examples of the functional layers exemplified herein.
  • the first portion of the barrier may include the same material as the material of at least one of the electron transport layer, the hole transport layer, and the light emitting layer of the first subpixel.
  • the second portion of the barrier may include the same material as the material of at least one of the electron transport layer, the hole transport layer, and the light emitting layer of the second subpixel.
  • at least one of the electron transport layer, the hole transport layer, and the light-emitting layer of the first sub-pixel may be extended to the pixel defining layer, and at least one of the electron transport layer, the hole transport layer, and the light-emitting layer of the second sub-pixel
  • the layer also extends onto the pixel defining layer.
  • the two extended portions overlap on the pixel defining layer to form an overlapping portion.
  • This overlapping portion can serve as a blocking member.
  • the scope of embodiments of the present disclosure is not limited to the extensions described herein.
  • the overlapping portions may be spaced apart from the respective sub-pixels, respectively.
  • the first portion and the second portion of the barrier member both comprise the same portion as the material of the electron transport layer
  • the first portion includes the same portion as the material of the electron transport layer and the electrons included in the second portion
  • the same portions of the material of the transport layer are spaced apart.
  • the first portion includes The same material portion of the electron transport layer of the first sub-pixel is spaced apart from the portion of the second portion that is identical to the material of the electron transport layer of the second sub-pixel.
  • the first portion includes the same material as the electron transport layer and the second portion includes the same material as the electron transport layer in a direction perpendicular to the surface of the pixel defining layer adjacent to the barrier.
  • the parts can be separated by different structural layers, so that the electrons between different sub-pixels do not affect each other, and the accuracy of sub-pixel illumination is improved.
  • the first portion and the second portion of the barrier member both comprise the same portion as the material of the hole transport layer
  • the first portion includes the same portion as the material of the hole transport layer and the portion included in the second portion
  • the same portions as the material of the hole transport layer are spaced apart.
  • the first portion includes The same portion of the material as the hole transport layer of the first sub-pixel is spaced apart from the portion of the second portion that is the same as the material of the hole transport layer of the second sub-pixel.
  • the first portion includes the same portion of the material as the hole transport layer and the second portion includes the hole transport layer in a direction perpendicular to the surface of the pixel defining layer adjacent to the blocking member.
  • the same material portion can be separated by different structural layers, so that the holes between different sub-pixels can be mutually unaffected, and the accuracy of sub-pixel illumination is improved.
  • the light emitting device may include a pixel defining layer 2, a plurality of sub-pixels, and a blocking member 80'.
  • Each sub-pixel may include a functional layer.
  • the functional layers of the plurality of sub-pixels may include a functional layer of the adjacent first sub-pixel 71 and a functional layer of the second sub-pixel 72 that are spaced apart by the pixel defining layer 2.
  • the blocking member 80' may be disposed on the pixel defining layer 2.
  • the functional layer of the first sub-pixel 71 may include an electron transport layer (which may be referred to as a first electron transport layer) 311, a hole transport layer (which may be referred to as a first hole transport layer) 313, and A light-emitting layer (which may be referred to as a first light-emitting layer) 312 between the electron transport layer 311 and the hole transport layer 313.
  • an electron transport layer which may be referred to as a first electron transport layer
  • a hole transport layer which may be referred to as a first hole transport layer
  • a light-emitting layer which may be referred to as a first light-emitting layer 312 between the electron transport layer 311 and the hole transport layer 313.
  • the functional layer of the second sub-pixel 72 may include an electron transport layer (which may be referred to as a second electron transport layer) 321, a hole transport layer (which may be referred to as a second hole transport layer) 323, and the electron transport layer 321 and the A light emitting layer (which may be referred to as a second light emitting layer) 322 between the hole transport layers 323.
  • an electron transport layer which may be referred to as a second electron transport layer
  • a hole transport layer which may be referred to as a second hole transport layer
  • a light emitting layer which may be referred to as a second light emitting layer
  • the first portion of the barrier 80' can include the same portion of the material as the luminescent layer 312 of the first sub-pixel 71.
  • the second portion of the barrier 80' can include the same portion of the material as the luminescent layer 322 of the second sub-pixel 72.
  • the first luminescent layer 312 and the second luminescent layer 322 may extend onto the pixel defining layer 2, respectively.
  • the extended portions of the two luminescent layers overlap on the pixel defining layer 2 to form an overlapping portion.
  • This overlapping portion can serve as the blocking member 80'.
  • an extended portion of the second luminescent layer 322 covers the extended portion of the first luminescent layer 312.
  • the blocking member can achieve the effect of blocking the light caused by the mixing phenomenon of the adjacent two sub-pixels, thereby reducing the light mixing phenomenon of the two sub-pixels.
  • the slope angle ⁇ formed on the pixel defining layer as the overlapping portion of the blocking member 80' may range from 1° ⁇ 60°.
  • the light-emitting layer at the upper layer covers the state of climbing when covered on the light-emitting layer of the lower layer, thus forming a slope angle.
  • the functional layer for example, the organic layer
  • the cathode layer described later
  • the first The sub-pixel 71 may be a red sub-pixel
  • the second sub-pixel 72 may be a green sub-pixel or a blue sub-pixel.
  • the first sub-pixel 71 can be a green sub-pixel
  • the second sub-pixel 72 can be a blue sub-pixel.
  • the red sub-pixel is a sub-pixel that can emit red light
  • the green sub-pixel is a sub-pixel that can emit green light
  • the blue sub-pixel is a sub-pixel that can emit blue light.
  • the same portion as the material of the light emitting layer of the green sub-pixel or the blue sub-pixel covers the same portion as the material of the light-emitting layer of the red sub-pixel.
  • the same portion as the material of the light-emitting layer of the blue sub-pixel covers the same portion as the material of the light-emitting layer of the green sub-pixel.
  • a light-emitting layer of a red sub-pixel is formed first, and then a light-emitting layer of a blue or green sub-pixel is formed. Since the light-emitting layer of the blue or green sub-pixel is thinner than the light-emitting layer of the red sub-pixel, the evaporation process time required to form the light-emitting layer of the blue or green sub-pixel is relatively short, thereby forming the red color The effect of the light-emitting layer of the sub-pixel is relatively small.
  • the human eye is insensitive to the blue sub-pixels, and the blue light-emitting layer is located at the uppermost layer. Thus, even if blue fluorescence occurs, it will affect the light purity of the blue light-emitting layer in the overlapping region, and the effect on the image of the human eye is relatively small.
  • the light emitting device may further include a cathode layer 1.
  • the cathode layer 1 may cover the entire area of a plurality of sub-pixels (which may be referred to as an active area).
  • the cathode layer 1 is located above the electron transport layer.
  • the light emitting device may further include a driving transistor (eg, a TFT (Thin Film Transistor)).
  • the driving transistor may include a semiconductor layer 92, a gate insulating layer 93, a gate electrode 94, a source electrode 95, a drain electrode 96, and the like.
  • the semiconductor layer 92 is on the substrate 91.
  • a buffer layer (not shown) may be present between the substrate 91 and the semiconductor layer 92.
  • the gate insulating layer 93 is located between the gate electrode 94 and the semiconductor layer 92.
  • the source 95 is connected to the anode 42 (or 41) through a layer of conductive material in the via 5 and to the semiconductor layer 92 through a layer of conductive material in the other via 971.
  • the drain 96 is connected to the semiconductor layer 92 through a layer of conductive material within another via 972.
  • the light emitting device may further include other insulating layers (for example, insulating layers 981 and 982) or a planarization layer or the like.
  • the sub-pixel may include an organic light emitting diode.
  • the light emitting device according to some embodiments of the present disclosure may be described in detail below from another angle.
  • Embodiments of the present disclosure also provide a light emitting device.
  • the light emitting device may include a plurality of driving transistors, a substrate 91, a plurality of organic light emitting diodes, and a blocking member 80'.
  • Each of the drive transistors may include a first electrode.
  • the first electrode can be the source 95.
  • the substrate 91 is located on one side of the plurality of driving transistors.
  • a plurality of organic light emitting diodes are located on the other side of the plurality of driving transistors opposite to the substrate 91.
  • Each of the organic light emitting diodes may include a second electrode (eg, anode 41 or 42), a third electrode (eg, cathode 1), and a functional layer.
  • the second electrode is electrically connected to the first electrode (for example, the anode 41 or 42 is electrically connected to the source 95). At least a portion of the functional layer is between the second electrode and the third electrode.
  • the plurality of organic light emitting diodes include at least a first organic light emitting diode 701 and a second organic light emitting diode 702 that are spaced apart by the pixel defining layer 2.
  • the functional layer may include at least the light emitting layer 312 or 322.
  • the area of the side of the light-emitting layer remote from the drive transistor is larger than the area of the side of the second electrode (eg, anode 41 or 42) remote from the drive transistor. This allows the luminescent layer to be in full contact with other functional layers, such as an electron transport layer or a hole transport layer, and to ensure an effective illuminating area as much as possible.
  • the blocking member 80' is located on a side of the pixel defining layer 2 remote from the driving transistor.
  • the projection of the blocking member 80' on the substrate 91 is spaced apart from the projection of the second electrode (e.g., the anode 41 or 42) on the substrate 91.
  • the blocking member 80' may include the same portion as the material of the functional layer (e.g., the luminescent layer).
  • the blocking member 80' may include a portion in which the light emitting layers 312 and 322 respectively extend onto the pixel defining layer 2 to overlap.
  • the drive transistor can also include a gate 94, a drain 96, and a semiconductor layer 92.
  • the semiconductor layer 92 is on the substrate 91.
  • the gate electrode 94 and the semiconductor layer 92 are spaced apart by the gate insulating layer 93.
  • Source 95 is coupled to a second electrode (e.g., anode 42 or 41).
  • the source 95 and the drain 96 are connected to the semiconductor layer 92, respectively.
  • the projection of the semiconductor layer 92 on the substrate 91 is within the projection of the second electrode (e.g., anode 42 or 41) on the substrate 91.
  • the functional layer may further include a hole transport layer 313 (or 323) and an electron transport layer 311 (or 321).
  • the barrier 80' can include a first portion and a second portion.
  • the material of the first portion is the same as the material of at least a portion of the functional layer of the first organic light emitting diode 701.
  • the material of the second portion is the same as the material of at least a portion of the functional layer of the second organic light emitting diode 702.
  • the material of the first portion of the blocking member 80' is the same as the material of the light emitting layer 312 of the first organic light emitting diode 701, and the material of the second portion of the blocking member 80' and the second organic light emitting diode
  • the material of the light-emitting layer 322 of 702 is the same.
  • the first portion and the second portion are superimposed on the pixel defining layer.
  • the first portion may be a portion of the first organic light emitting diode that extends over the pixel defining layer
  • the second portion may be a portion of the second organic light emitting diode that extends over the pixel defining layer .
  • the first portion may be a portion of the first organic light emitting diode 701 that extends above the pixel defining layer 2
  • the second portion may extend to the light emitting layer 322 of the second organic light emitting diode 702.
  • the pixel defines a portion above layer 2.
  • the first organic light emitting diode 701 may be a red organic light emitting diode, and the second organic light emitting diode 702 may be a green organic light emitting diode or a blue organic light emitting diode.
  • the first organic light emitting diode 701 may be a green organic light emitting diode, and the second organic light emitting diode 702 may be a blue organic light emitting diode.
  • FIG. 3 is a schematic cross-sectional view schematically showing a light emitting device according to further embodiments of the present disclosure.
  • the light emitting device may include a pixel defining layer 2, a plurality of sub-pixels, and a blocking member 80".
  • Each of the sub-pixels may include a functional layer.
  • the functional layers of the plurality of sub-pixels may include spaces separated by the pixel defining layer 2.
  • the blocking member 80" may be disposed on the pixel defining layer 2.
  • the same or similar structures of the light-emitting device shown in FIG. 3 and the light-emitting device shown in FIG. 2 will not be described again.
  • the first portion of the blocking member 80" may include the same portions as the materials of the electron transport layer 311, the hole transport layer 313, and the light emitting layer 312 of the first sub-pixel 71, respectively.
  • the second portion of the blocking member 80" may include the same portions as the materials of the electron transport layer 321, the hole transport layer 323, and the light emitting layer 322 of the second sub-pixel 72, respectively.
  • the electron transport layer 311, the hole transport layer 313, and the light emitting layer 312 of the first sub-pixel 71 may extend integrally onto the pixel defining layer 2.
  • the electron transport layer 321 , the hole transport layer 323 , and the light emitting layer 322 of the second sub-pixel 72 may also extend integrally onto the pixel defining layer 2 .
  • the extended portion of the above-described respective layers of the first sub-pixel 71 and the extended portion of the above-described respective layers of the second sub-pixel 72 overlap on the pixel defining layer 2, thereby forming an overlapping portion.
  • the overlapping portion can serve as the blocking member 80".
  • the blocking member can achieve the effect of blocking the light caused by the mixing phenomenon of the adjacent two sub-pixels, thereby weakening the light mixing phenomenon of the two sub-pixels.
  • the extended portions of the respective layers of the second sub-pixel 72 integrally cover the respective layers of the first sub-pixel 71 (including On the extended portion of the electron transport layer 311, the hole transport layer 313, and the light-emitting layer 312), for example, as shown in FIG.
  • the two electron transport layers 311 and 312 are spaced apart by the light emitting layer 322 and the hole transport layer 323, and the two hole transport layers 313 and 323 are spaced apart by the electron transport layer 311 and the light emitting layer 312, such that The carriers between the different sub-pixels may be made unaffected.
  • the contact resistance is small due to the small contact area. Large, holes are difficult to transfer between the two hole transport layers, and thus do not substantially affect the illumination of different sub-pixels.
  • the slope angle ⁇ formed on the pixel defining layer as the overlapping portion of the blocking member 80" may range from 1 ° ⁇ ⁇ ⁇ 60 °.
  • the first sub-pixel 71 may be a red sub-pixel, and the second sub-pixel 72 It can be a green sub-pixel or a blue sub-pixel.
  • the first sub-pixel 71 may be a green sub-pixel, and the second sub-pixel 72 can be a blue sub-pixel.
  • Such a design has a relatively small effect on the effect of viewing images by the human eye.
  • FIG. 2 shows an embodiment in which the light emitting layers of two sub-pixels overlap on the pixel defining layer to form a blocking member
  • FIG. 3 shows the electron transport layer, the hole transport layer and the light emitting layer of the two sub-pixels.
  • the blocking member of the embodiment of the present disclosure is not limited to the structure mentioned in the above embodiment.
  • the blocking member may include a structure formed by overlapping the electron transport layer 311 and the hole transport layer 323 on the pixel defining layer.
  • the blocking member may include a structure formed by overlapping the two light emitting layers 312 and 322, the electron transport layer 311, and the hole transport layer 323 on the pixel defining layer.
  • the blocking member may include a structure formed by overlapping the two light emitting layers 312 and 322, the electron transport layer 321 and the hole transport layer 313 on the pixel defining layer.
  • the blocking member can also be a structure formed by overlapping functional layers by other means, which are not enumerated here.
  • the area of the side of the hole transport layer 313 or 323 remote from the driving transistor is larger than the distance of the second electrode of the organic light emitting diode 701 or 702 (eg, the anode 41 or 42) away from the driving transistor.
  • the area of one side is larger than the area of the side of the electron transport layer 311 or 321 remote from the driving transistor is larger than the area of the side of the second electrode (eg, the anode 41 or 42) of the organic light emitting diode 701 or 702 that is remote from the driving transistor.
  • the first sub-pixel 71 is a red sub-pixel
  • the second sub-pixel 72 is a green sub-pixel
  • the first organic light-emitting diode 701 is a red organic light-emitting diode
  • the second organic light-emitting diode 702 is In the case of a green organic light emitting diode
  • the thickness of the blocking member (for example, the overlapping portion shown in FIG. 2 or FIG. 3) may be in the range of to For example, the thickness of the blocking member can be or Wait.
  • the first sub-pixel 71 is a green sub-pixel
  • the second sub-pixel 72 is a blue sub-pixel (or, in the first organic light-emitting diode 701, a green organic light-emitting diode, and a second organic light-emitting diode).
  • the thickness of the blocking member (for example, the overlapping portion shown in FIG. 2 or FIG. 3) may be in the range of to For example, the thickness of the blocking member can be or Wait.
  • the first sub-pixel 71 is a red sub-pixel
  • the second sub-pixel 72 is a blue sub-pixel
  • the thickness of the blocking member may be in the range of to For example, the thickness of the blocking member can be or Wait.
  • FIG. 4 is a top view schematically showing a light emitting device according to further embodiments of the present disclosure.
  • the first region 301 is a functional layer of the red sub-pixel R and an extended portion of the functional layer of the red sub-pixel R
  • the second region 302 is a functional layer of the green sub-pixel G and the green sub-pixel.
  • a region of the extended portion of the functional layer of G, the third region 303 being a region of the functional layer of the blue sub-pixel B and the extended portion of the functional layer of the blue sub-pixel B.
  • Such a design can make the effect of viewing images by the human eye better.
  • one pixel may be composed of three colors of red, green and blue sub-pixels, or one pixel may be composed of one red sub-pixel, one blue sub-pixel and two green sub-pixels. Moreover, the green sub-pixel can be made common to both pixels.
  • sub-pixels of the same row are alternately arranged in RGBG. Such an arrangement may result in substantially overlapping regions between adjacent sub-pixels of different colors.
  • the green sub-pixels G are arranged in one column, and the red sub-pixels R and the blue sub-pixels B are alternately arranged in another column.
  • Such a design can cause the green sub-pixels G to be multiplexed at different pixels.
  • the green sub-pixel G of the first row may serve as a sub-pixel of the first row when the first frame is displayed, and may also serve as a sub-pixel of the second row when the second frame is displayed. This will make the corners of the displayed image more rounded and the resolution higher.
  • a display device comprising: the light emitting device as described above.
  • the display device may include a display panel, a display screen, a mobile phone, a tablet, a notebook computer, and the like.
  • FIG. 5 is a flow chart illustrating a method of fabricating a light emitting device in accordance with some embodiments of the present disclosure.
  • a pixel defining layer is formed on the initial substrate structure, the pixel defining layer being formed with a plurality of openings exposing the initial substrate structure.
  • FIG. 6 is a schematic cross-sectional view schematically showing the structure of step S520 in FIG. 5 in the manufacturing process of the light emitting device according to some embodiments of the present disclosure.
  • a pixel defining layer 2 is formed on the initial substrate structure 100.
  • the initial substrate structure 100 may include an anode (eg, a first anode 41 and a second anode 42), a spacer insulating layer 6, a via 5 connecting the anode, and the like.
  • the initial substrate structure 100 can also include other structural layers, which are not shown here.
  • the pixel defining layer 2 is formed with a plurality of openings 201 exposing the initial substrate structure 100.
  • etching may be performed on the pixel defining layer 2 to form the plurality of openings 201.
  • each opening 201 can expose an anode.
  • one opening exposes the first anode 41 and the other opening exposes the second anode 42.
  • step S540 a functional layer for a plurality of sub-pixels is formed in the plurality of openings, and a stopper is formed on the pixel defining layer.
  • FIG. 1 is a schematic cross-sectional view schematically showing the structure of step S540 in FIG. 5 in the manufacturing process of a light emitting device according to some embodiments of the present disclosure.
  • a functional layer of the first sub-pixel 71 is formed in one of the plurality of openings
  • a functional layer of the second sub-pixel 72 is formed in the other adjacent opening
  • a blocking member 80 is formed on the pixel defining layer 2
  • the material of the barrier is different than the material of the sub-pixel.
  • the barrier may include an insulating layer, and the sub-pixel may include a functional layer (eg, an organic layer).
  • the functional layers and the blocking members of the sub-pixels can be formed separately.
  • a functional layer for a plurality of sub-pixels may be formed in a plurality of openings, and then a stopper may be formed on the pixel defining layer.
  • a barrier may be formed on the pixel defining layer and then a functional layer for the plurality of sub-pixels may be formed in the plurality of openings.
  • the material of the barrier may be the same as at least a portion of the functional layers of the plurality of sub-pixels.
  • a stopper may be formed in the process of forming the functional layers of the plurality of sub-pixels.
  • portions of the functional layers may also be formed on the pixel defining layer during the formation of the partial functional layers of the first sub-pixel and the second sub-pixel. These functional layers overlap on the pixel defining layer to form a barrier.
  • the functional layer of the sub-pixel may include an electron transport layer, a hole transport layer, and a light-emitting layer.
  • a portion of the light-emitting layer of the first sub-pixel may be overlaid on the pixel defining layer by an evaporation or printing process in forming the light-emitting layer of the first sub-pixel and the light-emitting layer of the second sub-pixel;
  • the evaporation or printing process causes a portion of the light-emitting layer of the second sub-pixel to overlie the portion of the light-emitting layer of the first sub-pixel located on the pixel-defining layer (refer to FIG. 2).
  • the light emitting layers of adjacent sub-pixels overlap on the pixel defining layer to form a barrier.
  • a method of fabricating a light emitting device has been provided.
  • a stopper is formed on the pixel defining layer.
  • the blocking member can block the light emitted by the first sub-pixel and the second sub-pixel from being respectively emitted above the pixel defining layer to cause a light mixing phenomenon.
  • the light mixing phenomenon between the adjacent first sub-pixel and the second sub-pixel can be weakened, and the display effect can be improved.

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Abstract

本公开提供了一种发光器件和显示装置，涉及显示技术领域。该发光器件包括：像素界定层；多个子像素，每个子像素包括功能层，该多个子像素的功能层包括被该像素界定层间隔开的相邻的第一子像素的功能层和第二子像素的功能层；和阻挡件，设置在该像素界定层上。在本公开中，在像素界定层上设置阻挡件，该阻挡件可以尽量阻挡该第一子像素和该第二子像素分别发射到像素界定层上方而造成混光现象的光线。这样可以减弱相邻的第一子像素和第二子像素之间的混光现象，从而提高显示效果。

Description

发光器件及其制造方法、显示装置
相关申请的交叉引用
本申请是以CN申请号为201820418243.0，申请日为2018年3月27日的申请为基础，并主张其优先权，该CN申请的公开内容在此作为整体引入本申请中。
技术领域
本公开涉及显示技术领域，特别涉及一种发光器件及其制造方法、显示装置。
背景技术
在相关技术的OLED(Organic Light-Emitting Diode，有机发光二极管)器件中，当多个颜色的子像素中的发光层材料以FMM(Fine metal mask，精密金属掩模板)工艺分别形成时，需要在各子像素中蒸镀对应颜色的有机层。子像素发光区域的边界被像素界定层(Pixel Define Layer，简称为PDL)限定，形成一个子像素井。有机层填充在该子像素井内。但当子像素发光时，光仍可在PDL的材料内传输。
目前，小尺寸产品的PPI(pixels per inch，每英寸像素数)越来越高，子像素间隔越来越小，但要求发光亮度却越来越高。在OLED器件中，每个子像素发出的光主要沿着与子像素的表面相垂直的方向发射出。
发明内容
本公开的发明人发现，在每个子像素中，会有一部分光以与子像素的表面相倾斜的方向发射出。这造成在相邻不同颜色的子像素之间的混光现象，从而导致色域不佳，降低视觉效果。
鉴于此，本公开的实施例提供一种发光器件，以减弱相邻子像素之间的混光现象。
根据本公开实施例的一个方面，提供了一种发光器件，包括：像素界定层；多个子像素，每个子像素包括功能层，所述多个子像素的功能层包括被所述像素界定层间隔开的相邻的第一子像素的功能层和第二子像素的功能层；和阻挡件，设置在所述像素界定层上。
在一些实施例中，所述阻挡件包括第一部分和第二部分，所述第一部分的材料与所述第一子像素的功能层的至少一部分的材料相同，所述第二部分的材料与所述第二 子像素的功能层的至少一部分的材料相同，其中，所述第一部分和所述第二部分叠加在所述像素界定层上。
在一些实施例中，所述功能层包括发光层。
在一些实施例中，所述功能层还包括电子传输层和空穴传输层，所述发光层位于所述电子传输层与所述空穴传输层之间；在所述第一部分和所述第二部分均包括与所述电子传输层的材料相同的部分的情况下，所述第一部分所包括的与所述电子传输层的材料相同的部分与所述第二部分所包括的与所述电子传输层的材料相同的部分间隔开；在所述第一部分和所述第二部分均包括与所述空穴传输层的材料相同的部分的情况下，所述第一部分所包括的与所述空穴传输层的材料相同的部分与所述第二部分所包括的与所述空穴传输层的材料相同的部分间隔开。
在一些实施例中，所述第一部分包括与所述第一子像素的电子传输层、空穴传输层和发光层的材料分别相同的部分，所述第二部分包括与所述第二子像素的电子传输层、空穴传输层和发光层的材料分别相同的部分。
在一些实施例中，所述阻挡件包括绝缘层。
在一些实施例中，所述阻挡件在所述像素界定层上所成的坡度角θ的范围为：1°<θ<60°。
在一些实施例中，所述第一部分为所述第一子像素的功能层延伸到所述像素界定层之上的部分，所述第二部分为所述第二子像素的功能层延伸到所述像素界定层之上的部分。
在一些实施例中，在所述第二部分覆盖所述第一部分的情况下，所述第一子像素为红色子像素，所述第二子像素为绿色子像素或蓝色子像素；或者，所述第一子像素为绿色子像素，所述第二子像素为蓝色子像素。
在一些实施例中，在所述多个子像素中，所述蓝色子像素的功能层和所述蓝色子像素的功能层的延伸部分的面积之和>所述红色子像素的功能层和所述红色子像素的功能层的延伸部分的面积之和>所述绿色子像素的功能层和所述绿色子像素的功能层的延伸部分的面积之和。
在一些实施例中，在所述第一子像素为红色子像素，所述第二子像素为绿色子像素的情况下，所述阻挡件的厚度范围为
Figure PCTCN2018113390-appb-000001
至
Figure PCTCN2018113390-appb-000002
在所述第一子像素为绿色子像素，所述第二子像素为蓝色子像素的情况下，所述阻挡件的厚度范围为
Figure PCTCN2018113390-appb-000003
至
Figure PCTCN2018113390-appb-000004
或者，在所述第一子像素为红色子像素，所述第二子像素为蓝色子像素的情况下，所 述阻挡件的厚度范围为
Figure PCTCN2018113390-appb-000005
至
Figure PCTCN2018113390-appb-000006
根据本公开实施例的另一个方面，提供了一种发光器件，包括，多个驱动晶体管，每个驱动晶体管包括第一电极；基板，位于所述多个驱动晶体管的一侧；多个有机发光二极管，位于所述多个驱动晶体管的与所述基板相对的另一侧；每个有机发光二极管包括第二电极、第三电极和功能层；所述第二电极与所述第一电极电性连接，所述功能层的至少一部分位于所述第二电极与第三电极之间，所述多个有机发光二极管至少包括被像素界定层间隔开的第一有机发光二极管和第二有机发光二极管，所述功能层至少包括发光层，所述发光层的面积大于所述第二电极的面积；以及阻挡件，位于所述像素界定层的远离所述驱动晶体管的一侧，所述阻挡件在所述基板上的投影与所述第二电极在所述基板上的投影间隔开，所述阻挡件包括与所述功能层的材料相同的部分。
在一些实施例中，所述第一电极为源极，所述驱动晶体管还包括栅极、漏极和半导体层；其中，所述半导体层在所述基板上的投影位于所述第二电极在所述基板上的投影之内。
在一些实施例中，所述功能层还包括空穴传输层和电子传输层，所述空穴传输层的远离所述驱动晶体管的一面的面积大于所述第二电极的远离所述驱动晶体管的一面的面积，所述电子传输层的远离所述驱动晶体管的一面的面积大于所述第二电极的远离所述驱动晶体管的一面的面积。
在一些实施例中，所述阻挡件在所述像素界定层上所成的坡度角θ的范围为：1°<θ<60°。
在一些实施例中，所述阻挡件包括第一部分和第二部分，所述第一部分的材料与所述第一有机发光二极管的功能层的至少一部分的材料相同，所述第二部分的材料与所述第二有机发光二极管的功能层的至少一部分的材料相同，其中，所述第一部分和所述第二部分叠加在所述像素界定层上。
在一些实施例中，所述第一部分为所述第一有机发光二极管的功能层延伸到所述像素界定层之上的部分，所述第二部分为所述第二有机发光二极管的功能层延伸到所述像素界定层之上的部分。
在一些实施例中，在所述第二部分覆盖所述第一部分的情况下，所述第一有机发光二极管为红色有机发光二极管，所述第二有机发光二极管为绿色有机发光二极管或蓝色有机发光二极管；或者，所述第一有机发光二极管为绿色有机发光二极管，所述 第二有机发光二极管为蓝色有机发光二极管。
在一些实施例中，在所述第一有机发光二极管为红色有机发光二极管，所述第二有机发光二极管为绿色有机发光二极管的情况下，所述阻挡件的厚度范围为
Figure PCTCN2018113390-appb-000007
至
Figure PCTCN2018113390-appb-000008
在所述第一有机发光二极管为绿色有机发光二极管，所述第二有机发光二极管为蓝色有机发光二极管的情况下，所述阻挡件的厚度范围为
Figure PCTCN2018113390-appb-000009
至
Figure PCTCN2018113390-appb-000010
或者，在所述第一有机发光二极管为红色有机发光二极管，所述第二有机发光二极管为蓝色有机发光二极管的情况下，所述阻挡件的厚度范围为
Figure PCTCN2018113390-appb-000011
至
Figure PCTCN2018113390-appb-000012
根据本公开实施例的另一个方面，提供了一种显示装置，包括：如前所述的发光器件。
根据本公开实施例的另一个方面，提供了一种发光器件的制造方法，包括：在初始衬底结构上形成像素界定层，所述像素界定层形成有露出所述初始衬底结构的多个开口；以及在所述多个开口中形成用于多个子像素的功能层，并在所述像素界定层上形成阻挡件。
在一些实施例中，在所述阻挡件的材料与所述多个子像素的功能层的至少部分材料相同的情况下，在形成所述多个子像素的功能层的过程中形成所述阻挡件。
在上述发光器件中，在像素界定层上设置有阻挡件。该阻挡件可以尽量阻挡第一子像素和第二子像素分别发射到像素界定层上方而造成混光现象的光线。这样可以减弱相邻的第一子像素和第二子像素之间的混光现象，从而提高显示效果。
通过以下参照附图对本公开的示例性实施例的详细描述，本公开的其它特征及其优点将会变得清楚。
附图说明
构成说明书的一部分的附图描述了本公开的实施例，并且连同说明书一起用于解释本公开的原理。
参照附图，根据下面的详细描述，可以更加清楚地理解本公开，其中：
图1是示意性地示出根据本公开一些实施例的发光器件的截面示意图；
图2是示意性地示出根据本公开另一些实施例的发光器件的截面示意图；
图3是示意性地示出根据本公开另一些实施例的发光器件的截面示意图；
图4是示意性地示出根据本公开另一些实施例的发光器件的顶视图；
图5是示出根据本公开一些实施例的发光器件的制造方法的流程图；
图6是示意性地示出根据本公开一些实施例的发光器件的制造过程中在图5中的步骤S520的结构的截面示意图。
应当明白，附图中所示出的各个部分的尺寸并不是按照实际的比例关系绘制的。此外，相同或类似的参考标号表示相同或类似的构件。
具体实施方式
现在将参照附图来详细描述本公开的各种示例性实施例。对示例性实施例的描述仅仅是说明性的，决不作为对本公开及其应用或使用的任何限制。本公开可以以许多不同的形式实现，不限于这里所述的实施例。提供这些实施例是为了使本公开透彻且完整，并且向本领域技术人员充分表达本公开的范围。应注意到：除非另外具体说明，否则在这些实施例中阐述的部件和步骤的相对布置、材料的组分、数字表达式和数值应被解释为仅仅是示例性的，而不是作为限制。
本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的部分。“包括”或者“包含”等类似的词语意指在该词前的要素涵盖在该词后列举的要素，并不排除也涵盖其他要素的可能。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
在本公开中，当描述到特定器件位于第一器件和第二器件之间时，在该特定器件与第一器件或第二器件之间可以存在居间器件，也可以不存在居间器件。当描述到特定器件连接其它器件时，该特定器件可以与所述其它器件直接连接而不具有居间器件，也可以不与所述其它器件直接连接而具有居间器件。
本公开使用的所有术语(包括技术术语或者科学术语)与本公开所属领域的普通技术人员理解的含义相同，除非另外特别定义。还应当理解，在诸如通用字典中定义的术语应当被解释为具有与它们在相关技术的上下文中的含义相一致的含义，而不应用理想化或极度形式化的意义来解释，除非这里明确地这样定义。
对于相关领域普通技术人员已知的技术、方法和设备可能不作详细讨论，但在适当情况下，所述技术、方法和设备应当被视为说明书的一部分。
本公开的发明人发现，在每个子像素中，会有一部分光以与子像素的表面相倾斜的方向发射出。这造成在相邻不同颜色的子像素之间的混光现象，从而导致色域不佳，降低视觉效果。
鉴于此，本公开的实施例提供一种发光器件，以减弱相邻子像素之间的混光现象。下面结合附图详细描述根据本公开一些实施例的发光器件。图1是示意性地示出根据本公开一些实施例的发光器件的截面示意图。
如图1所示，该发光器件可以包括像素界定层2、多个子像素和阻挡件80。每个子像素可以包括功能层。该多个子像素的功能层可以包括被像素界定层2间隔开的相邻的第一子像素71的功能层和第二子像素72的功能层。该阻挡件80可以设置在像素界定层2上。此外，图1中还示出了阳极(包括用于第一子像素的第一阳极41和用于第二子像素的第二阳极42)、过孔5、以及阳极与背板电路(图1中未示出)之间的间隔绝缘层6。该过孔5是在间隔绝缘层6上形成的通孔，在通孔内具有导电材料层(例如金属层)。阳极与背板电路通过过孔5内的导电材料层导通。需要说明的是，虽然图1中示出了阳极与过孔5内的导电材料层为一体形成的结构，但是本公开实施例的范围并不仅限于此，该阳极与过孔内的导电材料层可以为分别形成的结构。例如，阳极与过孔内的导电材料层可以是不同材料的结构。
在该实施例的发光器件中，在像素界定层上设置有阻挡件。该阻挡件可以尽量阻挡第一子像素和第二子像素分别发射到像素界定层上方而造成混光现象的光线。这样可以减弱相邻的第一子像素和第二子像素之间的混光现象，从而提高显示效果。
在一些实施例中，如图1所示，该阻挡件80在像素界定层上所成的坡度角θ的范围可以为：1°<θ<60°。例如该坡度角θ可以为10°、20°、30°或50°等。这里，坡度角可以是阻挡件的斜面与像素界定层的上表面之间的夹角。在该实施例中，通过设置上述合适范围的坡度角，可以尽可能地减弱相邻子像素之间的混光现象，而且也能够尽量防止阻挡子像素正常发射的光线。需要说明的是，本领域技术人员根据需要也可以将坡度角θ设置为其他的角度，本公开实施例的坡度角θ的范围并不仅限于此。
在一些实施例中，该阻挡件80可以包括绝缘层。例如该绝缘层可以包括二氧化硅和氮化硅中的至少一种。在该实施例中，描述了在像素界定层上利用绝缘层作为阻挡件的实施例。但是，本公开实施例的方式并不仅限于此。本公开的实施例还可以包括利用与子像素的功能层的材料相同的结构层形成阻挡件的实施例。
在一些实施例中，阻挡件可以包括第一部分和第二部分。该第一部分的材料与第一子像素的功能层的至少一部分的材料相同。该第二部分的材料与第二子像素的功能层的至少一部分的材料相同。该第一部分和该第二部分叠加在像素界定层上。在该实 施例中，利用与相邻两个子像素的至少部分功能层的材料相同的结构层作为阻挡件，在制造过程中不需要引入其他材料层，制造过程中更容易实施。
在一些实施例中，阻挡件的第一部分可以为第一子像素的功能层延伸到像素界定层之上的部分，该阻挡件的第二部分可以为第二子像素的功能层延伸到该像素界定层之上的部分。例如，每个子像素的功能层可以延伸到像素界定层之上，这样相邻的第一子像素和第二子像素各有一部分功能层在像素界定层上交叠，从而形成交叠部分。该交叠部分就可以作为阻挡件。当然，本公开实施例的范围并不仅限于这里描述的延伸情况，例如，在制造的过程中，交叠部分的功能层可以分别与相应的子像素的功能层间隔开。
在一些实施例中，功能层可以包括发光层。例如，阻挡件的第一部分可以包括与第一子像素的发光层的材料相同的部分，阻挡件的第二部分可以包括与第二子像素的发光层的材料相同的部分。
在另一些实施例中，功能层还可以包括电子传输层(Electron Transport Layer，简称为ETL)和空穴传输层(Hole Transport Layer，简称为HTL)。发光层位于该电子传输层与该空穴传输层之间。例如，电子传输层、空穴传输层和发光层可以均为有机层。需要说明的是，功能层除了可以包括电子传输层、空穴传输层和发光层中的至少一种之外，也可以包括其他有机层或无机层。例如，功能层可以包括电子阻挡层或空穴阻挡层等。因此，本公开实施例的范围并不仅限于这里所举出的功能层的示例。
在一些实施例中，阻挡件的第一部分可以包括与第一子像素的电子传输层、空穴传输层和发光层的至少一层的材料相同的部分。阻挡件的第二部分可以包括与第二子像素的电子传输层、空穴传输层和发光层的至少一层的材料相同的部分。例如，可以使得第一子像素的电子传输层、空穴传输层和发光层的至少一层延伸到像素界定层上，第二子像素的电子传输层、空穴传输层和发光层的至少一层也延伸到像素界定层上。这两个延伸的部分在像素界定层上交叠，从而形成交叠部分。该交叠部分可以作为阻挡件。当然，本公开实施例的范围并不仅限于这里描述的延伸情况。例如，在制造的过程中，交叠部分可以分别与相应的子像素间隔开。
在阻挡件的第一部分和第二部分均包括与电子传输层的材料相同的部分的情况下，该第一部分所包括的与电子传输层的材料相同的部分与该第二部分所包括的与电子传输层的材料相同的部分间隔开。例如，在第一部分包括与第一子像素的电子传输层的材料相同的部分且第二部分包括与第二子像素的电子传输层的材料相同的部分 的情况下，该第一部分所包括的与第一子像素的电子传输层的材料相同的部分与该第二部分所包括的与第二子像素的电子传输层的材料相同的部分间隔开。在该实施例中，在垂直于像素界定层的靠近阻挡件的表面的方向上，第一部分所包括的与电子传输层的材料相同的部分与第二部分所包括的与电子传输层的材料相同的部分可以被不同的结构层间隔开，这样可以使得不同的子像素之间的电子互不影响，提高子像素发光的准确性。
在阻挡件的第一部分和第二部分均包括与空穴传输层的材料相同的部分的情况下，该第一部分所包括的与空穴传输层的材料相同的部分与该第二部分所包括的与空穴传输层的材料相同的部分间隔开。例如，在第一部分包括与第一子像素的空穴传输层的材料相同的部分且第二部分包括与第二子像素的空穴传输层的材料相同的部分的情况下，该第一部分所包括的与第一子像素的空穴传输层的材料相同的部分与该第二部分所包括的与第二子像素的空穴传输层的材料相同的部分间隔开。在该实施例中，在垂直于像素界定层的靠近阻挡件的表面的方向上，第一部分所包括的与空穴传输层的材料相同的部分与第二部分所包括的与空穴传输层的材料相同的部分可以被不同的结构层间隔开，这样可以使得不同的子像素之间的空穴互不影响，提高子像素发光的准确性。
下面分别结合图2和图3详细描述以功能层的交叠部分作为阻挡件的实施例。
图2是示意性地示出根据本公开另一些实施例的发光器件的截面示意图。如图2所示，该发光器件可以包括像素界定层2、多个子像素和阻挡件80'。每个子像素可以包括功能层。该多个子像素的功能层可以包括被像素界定层2间隔开的相邻的第一子像素71的功能层和第二子像素72的功能层。该阻挡件80'可以设置在像素界定层2上。
例如，如图2所示，第一子像素71的功能层可以包括电子传输层(可以称为第一电子传输层)311、空穴传输层(可以称为第一空穴传输层)313以及在该电子传输层311与该空穴传输层313之间的发光层(可以称为第一发光层)312。第二子像素72的功能层可以包括电子传输层(可以称为第二电子传输层)321、空穴传输层(可以称为第二空穴传输层)323以及在该电子传输层321与该空穴传输层323之间的发光层(可以称为第二发光层)322。
在一些实施例中，如图2所示，阻挡件80'的第一部分可以包括与第一子像素71的发光层312的材料相同的部分。在一些实施例中，该阻挡件80'的第二部分可以包 括与第二子像素72的发光层322的材料相同的部分。
例如，如图2所示，第一发光层312和第二发光层322可以分别延伸到像素界定层2上。而且这两个发光层的延伸部分在该像素界定层2上交叠，从而形成交叠部分。该交叠部分即可作为阻挡件80'。在该阻挡件80'中，第二发光层322的延伸部分覆盖在第一发光层312的延伸部分上。该阻挡件可以实现阻挡相邻两个子像素发出的造成混合现象的光线的效果，因此可以减弱两个子像素的混光现象。
在一些实施例中，如图2所示，作为阻挡件80'的交叠部分在像素界定层上所成的坡度角θ的范围可以为1°<θ<60°。在该实施例中，在两个发光层交叠时，处于高层的发光层覆盖在处于低层的发光层上时会呈现爬坡的状态，因而形成坡度角。在前面所述的坡度角的范围内，功能层(例如有机层)和在该功能层上的阴极层(后面将描述)不容易在底角处断裂，从而不影响电学性能。
在一些实施例中，如图2所示，在阻挡件的第二部分(例如第二发光层322的延伸部分)覆盖第一部分(例如第一发光层312的延伸部分)的情况下，第一子像素71可以为红色子像素，第二子像素72可以为绿色子像素或蓝色子像素。在另一些实施例中，在阻挡件的第二部分覆盖第一部分的情况下，第一子像素71可以为绿色子像素，第二子像素72可以为蓝色子像素。这里，红色子像素为可以发出红色光的子像素，绿色子像素为可以发出绿色光的子像素，蓝色子像素为可以发出蓝色光的子像素。
在上述实施例中，在作为阻挡件的交叠部分，与绿色子像素或蓝色子像素的发光层的材料相同的部分覆盖与红色子像素的发光层的材料相同的部分。或者，在交叠部分，与蓝色子像素的发光层的材料相同的部分覆盖与绿色子像素的发光层的材料相同的部分。按照这样的交叠覆盖方式，在制造过程中，可以设置RGB(R表示红色子像素，G表示绿色子像素，B表示蓝色子像素)三者的有机层(例如发光层)的厚度逐渐递减，这样可以使得后续的蒸镀工艺时间比前面时间更短，对前面形成的膜层材料影响比较小。
例如，先形成红色子像素的发光层，然后形成蓝色或绿色子像素的发光层。由于蓝色或绿色子像素的发光层相比红色子像素的发光层更薄，因而在形成蓝色或绿色子像素的发光层时所需要的蒸镀工艺时间比较短，从而对已经形成的红色子像素的发光层的影响比较小。
另外，人眼对蓝色子像素不敏感，蓝色发光层位于最上层。这样即使有蓝色荧光发生，更多会影响到蓝色发光层在交叠区的光纯度，对人眼观看图像效果的影响比较 小。
在本公开的一些实施例中，如图2所示，发光器件还可以包括阴极层1。例如，该阴极层1可以覆盖多个子像素的整个区域(可以称为有源区)。该阴极层1位于电子传输层之上。
在本公开的一些实施例中，发光器件还可以包括驱动晶体管(例如TFT(Thin Film Transistor，薄膜晶体管))。例如，如图2所示，该驱动晶体管可以包括：半导体层92、栅极绝缘层93、栅极94、源极95和漏极96等。该半导体层92位于基板91上。例如，在基板91与半导体层92之间还可以存在缓冲层(图中未示出)。栅极绝缘层93位于栅极94与半导体层92之间。源极95通过过孔5内的导电材料层与阳极42(或41)连接，并通过另一过孔971内的导电材料层与半导体层92连接。漏极96通过另一过孔972内的导电材料层与半导体层92连接。另外，发光器件还可以包括其他的绝缘层(例如绝缘层981和982)或平坦化层等。
在本公开的实施例中，子像素可以包括有机发光二极管。下面可以从另一个角度详细描述根据本公开一些实施例中的发光器件。
本公开的实施例还提供了一种发光器件。例如如图2所示，该发光器件可以包括多个驱动晶体管、基板91、多个有机发光二极管和阻挡件80'。
每个驱动晶体管可以包括第一电极。例如该第一电极可以为源极95。基板91位于所述多个驱动晶体管的一侧。多个有机发光二极管位于所述多个驱动晶体管的与该基板91相对的另一侧。每个有机发光二极管可以包括第二电极(例如阳极41或42)、第三电极(例如阴极1)和功能层。该第二电极与该第一电极电性连接(例如阳极41或42与源极95电性连接)。所述功能层的至少一部分位于第二电极与第三电极之间。所述多个有机发光二极管至少包括被像素界定层2间隔开的第一有机发光二极管701和第二有机发光二极管702。功能层至少可以包括发光层312或322。发光层的远离驱动晶体管的一面的面积大于第二电极(例如阳极41或42)的远离驱动晶体管的一面的面积。这样可以使得发光层与其它功能层(例如电子传输层或空穴传输层)完全接触，并可以尽量确保有效发光面积。
阻挡件80'位于像素界定层2的远离驱动晶体管的一侧。该阻挡件80'在基板91上的投影与第二电极(例如阳极41或42)在该基板91上的投影间隔开。该阻挡件80'可以包括与功能层(例如发光层)的材料相同的部分。例如，该阻挡件80'可以包括发光层312和322分别延伸到像素界定层2上而交叠的部分。
在一些实施例中，如图2所示，该驱动晶体管还可以包括栅极94、漏极96和半导体层92。该半导体层92位于基板91上。栅极94与半导体层92之间被栅极绝缘层93间隔开。源极95与第二电极(例如阳极42或41)连接。该源极95和漏极96分别与半导体层92连接。该半导体层92在该基板91上的投影位于第二电极(例如阳极42或41)在该基板91上的投影之内。
在一些实施例中，如图2所示，功能层还可以包括空穴传输层313(或323)和电子传输层311(或321)。
在一些实施例中，阻挡件80'可以包括第一部分和第二部分。该第一部分的材料与第一有机发光二极管701的功能层的至少一部分的材料相同。该第二部分的材料与第二有机发光二极管702的功能层的至少一部分的材料相同。例如，如图2所示，该阻挡件80'的第一部分的材料与第一有机发光二极管701的发光层312的材料相同，该阻挡件80'的第二部分的材料与第二有机发光二极管702的发光层322的材料相同。该第一部分和该第二部分叠加在像素界定层上。
在一些实施例中，第一部分可以为第一有机发光二极管的功能层延伸到像素界定层之上的部分，第二部分可以为第二有机发光二极管的功能层延伸到像素界定层之上的部分。例如，如图2所示，第一部分可以为第一有机发光二极管701的发光层312延伸到像素界定层2之上的部分，第二部分可以为第二有机发光二极管702的发光层322延伸到像素界定层2之上的部分。
在一些实施例中，在第二部分覆盖第一部分的情况下，第一有机发光二极管701可以为红色有机发光二极管，第二有机发光二极管702可以为绿色有机发光二极管或蓝色有机发光二极管。在另一些实施例中，在第二部分覆盖第一部分的情况下，第一有机发光二极管701可以为绿色有机发光二极管，第二有机发光二极管702可以为蓝色有机发光二极管。
图3是示意性地示出根据本公开另一些实施例的发光器件的截面示意图。如图3所示，该发光器件可以包括像素界定层2、多个子像素和阻挡件80"。每个子像素可以包括功能层。该多个子像素的功能层可以包括被像素界定层2间隔开的相邻的第一子像素71的功能层和第二子像素72的功能层。该阻挡件80"可以设置在像素界定层2上。这里，图3所示的发光器件与图2所示的发光器件的相同或相似的结构将不再赘述。
在一些实施例中，如图3所示，阻挡件80"的第一部分可以包括与第一子像素71 的电子传输层311、空穴传输层313和发光层312的材料分别相同的部分。在一些实施例中，如图3所示，该阻挡件80"的第二部分可以包括与第二子像素72的电子传输层321、空穴传输层323和发光层322的材料分别相同的部分。
例如，如图3所示，第一子像素71的电子传输层311、空穴传输层313和发光层312可以整体地延伸到像素界定层2上。第二子像素72的电子传输层321、空穴传输层323和发光层322也可以整体地延伸到像素界定层2上。第一子像素71的上述各层的延伸部分与第二子像素72的上述各层的延伸部分在该像素界定层2上交叠，从而形成交叠部分。该交叠部分即可作为阻挡件80"。该阻挡件可以实现阻挡相邻两个子像素发出的造成混合现象的光线的效果，因此可以减弱两个子像素的混光现象。
在该阻挡件80"中，第二子像素72的各层(包括电子传输层321、空穴传输层323和发光层322)的延伸部分整体地覆盖在第一子像素71的各层(包括电子传输层311、空穴传输层313和发光层312)的延伸部分上。例如如图3所示，在交叠部分的结构层中，在垂直于像素界定层的上表面(即靠近阻挡件的表面)的方向上，两个电子传输层311和312被发光层322和空穴传输层323间隔开，两个空穴传输层313和323被电子传输层311和发光层312间隔开，这样可以使得不同的子像素之间的载流子互不影响。需要说明的是，虽然空穴传输层313的侧面与空穴传输层323可能会有接触，但是由于接触面积很小，造成接触电阻很大，空穴很难在两个空穴传输层之间传输，因此基本并不影响不同子像素的发光。
相比图2所示的发光器件的结构，图3所示的发光器件中，所有功能层均在相邻子像素之间进行交叠，这可以增加交叠部分的厚度即增加阻挡件的厚度，从而提高阻挡混光的效果。
在一些实施例中，如图3所示，作为阻挡件80"的交叠部分在像素界定层上所成的坡度角θ的范围可以为1°<θ<60°。
在一些实施例中，与前面描述类似地，如图3所示，在阻挡件的第二部分覆盖第一部分的情况下，该第一子像素71可以为红色子像素，该第二子像素72可以为绿色子像素或蓝色子像素。在另一些实施例中，与前面描述类似地，如图3所示，在阻挡件的第二部分覆盖第一部分的情况下，该第一子像素71可以为绿色子像素，该第二子像素72可以为蓝色子像素。这样的设计对人眼观看图像效果的影响比较小。
需要说明的是，图2示出了两个子像素的发光层在像素界定层上交叠形成阻挡件的实施方式，图3示出了两个子像素的电子传输层、空穴传输层和发光层在像素界定 层上交叠形成阻挡件的实施方式。应当理解的是，本公开实施例的阻挡件并不局限于上述实施例中提及的结构。例如，该阻挡件可以包括通过电子传输层311和空穴传输层323在像素界定层上交叠而形成的结构。又例如，该阻挡件可以包括通过两个发光层312和322、电子传输层311和空穴传输层323在像素界定层上交叠而形成的结构。又例如，该阻挡件可以包括通过两个发光层312和322、电子传输层321和空穴传输层313在像素界定层上交叠而形成的结构。当然，本领域技术人员能够理解，该阻挡件还可以是将功能层通过其他方式交叠而形成的结构，这里不在一一列举。
在一些实施例中，如图3所示，空穴传输层313或323的远离驱动晶体管的一面的面积大于有机发光二极管701或702的第二电极(例如阳极41或42)的远离驱动晶体管的一面的面积。在一些实施例中，电子传输层311或321的远离驱动晶体管的一面的面积大于有机发光二极管701或702的第二电极(例如阳极41或42)的远离驱动晶体管的一面的面积。
在一些实施例中，在第一子像素71为红色子像素，第二子像素72为绿色子像素(或者说，在第一有机发光二极管701为红色有机发光二极管，第二有机发光二极管702为绿色有机发光二极管)的情况下，阻挡件(例如图2或图3所示的交叠部分)的厚度范围可以为
Figure PCTCN2018113390-appb-000013
至
Figure PCTCN2018113390-appb-000014
例如，该阻挡件的厚度可以为
Figure PCTCN2018113390-appb-000015
或
Figure PCTCN2018113390-appb-000016
等。
在另一些实施例中，在第一子像素71为绿色子像素，第二子像素72为蓝色子像素(或者说，在第一有机发光二极管701为绿色有机发光二极管，第二有机发光二极管702为蓝色有机发光二极管)的情况下，阻挡件(例如图2或图3所示的交叠部分)的厚度范围可以为
Figure PCTCN2018113390-appb-000017
至
Figure PCTCN2018113390-appb-000018
例如，该阻挡件的厚度可以为
Figure PCTCN2018113390-appb-000019
或
Figure PCTCN2018113390-appb-000020
等。
在另一些实施例中，在第一子像素71为红色子像素，第二子像素72为蓝色子像素(或者说，在第一有机发光二极管701为红色有机发光二极管，第二有机发光二极管702为蓝色有机发光二极管)的情况下，阻挡件(例如图2或图3所示的交叠部分)的厚度范围可以为
Figure PCTCN2018113390-appb-000021
至
Figure PCTCN2018113390-appb-000022
例如，该阻挡件的厚度可以为
Figure PCTCN2018113390-appb-000023
或
Figure PCTCN2018113390-appb-000024
等。
图4是示意性地示出根据本公开另一些实施例的发光器件的顶视图。
如图4所示，第一区域301为红色子像素R的功能层和该红色子像素R的功能层的延伸部分的区域，第二区域302为绿色子像素G的功能层和该绿色子像素G的功 能层的延伸部分的区域，第三区域303为蓝色子像素B的功能层和该蓝色子像素B的功能层的延伸部分的区域。这些子像素中，相邻的子像素之间均存在交叠的区域。
在一些实施例中，如图4所示，在多个子像素中，第三区域303的面积>第一区域301的面积>第二区域302的面积。这样的设计可以使得人眼观看图像的效果比较好。
在一些实施例中，可以由红绿蓝三个颜色的子像素组成一个像素，也可以由1个红色子像素、1个蓝色子像素和2个绿色子像素共同组成一个像素。而且可以使得绿色子像素被两个像素所共用。
在一些实施例中，如图4所示，在多个子像素中，同一行的子像素按照RGBG交替排列。这样的排列可以使得不同颜色的相邻子像素之间基本均包含交叠区域。
在一些实施例中，如图4所示，在相邻的两列子像素中，绿色子像素G在一列中排列，红色子像素R和蓝色子像素B在另一列中交替排列。这样的设计可以使得绿色子像素G在不同像素复用。例如，第一行的绿色子像素G在显示第一幅画面时可以作为第一行的子像素，而在显示第二幅画面时，也可以根据画面需要，作为第二行的子像素。这样可以使得所显示图像的边角更加圆润，分辨率更高。
在本公开的实施例中，还提供了一种显示装置，包括：如前所述的发光器件。例如图1、图2或图3所示的发光器件。例如，该显示装置可以包括显示面板、显示屏、手机、平板电脑、笔记本电脑等。
图5是示出根据本公开一些实施例的发光器件的制造方法的流程图。
在步骤S520，在初始衬底结构上形成像素界定层，该像素界定层形成有露出该初始衬底结构的多个开口。
图6是示意性地示出根据本公开一些实施例的发光器件的制造过程中在图5中的步骤S520的结构的截面示意图。如图6所示，在初始衬底结构100上形成像素界定层2。例如，如图6所示，该初始衬底结构100可以包括阳极(例如第一阳极41和第二阳极42)、间隔绝缘层6和连接阳极的过孔5等。当然，本领域技术人员可以理解，初始衬底结构100还可以包括其他结构层，这里不在一一示出。
如图6所示，该像素界定层2形成有露出初始衬底结构100的多个开口201。例如可以对像素界定层2执行刻蚀以形成该多个开口201。例如，每个开口201可以露出一个阳极。例如，如图6所示，对于相邻的两个开口，一个开口露出第一阳极41，另一个开口露出第二阳极42。
回到图5，在步骤S540，在多个开口中形成用于多个子像素的功能层，并在像素界定层上形成阻挡件。
图1是示意性地示出根据本公开一些实施例的发光器件的制造过程中在图5中的步骤S540的结构的截面示意图。如图1所示，在多个开口中的一个开口中形成第一子像素71的功能层，在相邻的另一个开口中形成第二子像素72的功能层，以及在像素界定层2上形成阻挡件80。
在一些实施例中，阻挡件的材料与子像素的材料不同。例如阻挡件可以包括绝缘层，子像素可以包括功能层(例如有机层)。在这样的情况下，可以分别形成子像素的功能层和阻挡件。例如，可以先在多个开口中形成用于多个子像素的功能层，然后在像素界定层上形成阻挡件。又例如，可以先在像素界定层上形成阻挡件，然后在多个开口中形成用于多个子像素的功能层。
在另一些实施例中，阻挡件的材料可以与所述多个子像素的功能层的至少部分材料相同。在这样的情况下，可以在形成所述多个子像素的功能层的过程中形成阻挡件。例如，可以在形成第一子像素和第二子像素的部分功能层的过程中，使得这些功能层的部分也形成在像素界定层上。通过这些功能层在像素界定层上交叠，从而形成阻挡件。
在一些实施例中，子像素的功能层可以包括电子传输层、空穴传输层和发光层。例如，可以在形成第一子像素的发光层和第二子像素的发光层的过程中，利用蒸镀或打印工艺使得第一子像素的发光层的一部分覆盖在像素界定层上；然后，利用蒸镀或打印工艺使得第二子像素的发光层的一部分覆盖在该第一子像素的发光层的位于该像素界定层上的所述部分上(可以参考图2所示)。这样，相邻的子像素的发光层在像素界定层上交叠，从而形成阻挡件。
至此，提供了根据本公开一些实施例的发光器件的制造方法。在该制造方法中，在像素界定层上形成了阻挡件。该阻挡件可以尽量阻挡第一子像素和第二子像素分别发射到像素界定层上方而造成混光现象的光线。从而可以减弱相邻的第一子像素和第二子像素之间的混光现象，提高显示效果。
至此，已经详细描述了本公开的各实施例。为了避免遮蔽本公开的构思，没有描述本领域所公知的一些细节。本领域技术人员根据上面的描述，完全可以明白如何实施这里公开的技术方案。
虽然已经通过示例对本公开的一些特定实施例进行了详细说明，但是本领域的技 术人员应该理解，以上示例仅是为了进行说明，而不是为了限制本公开的范围。本领域的技术人员应该理解，可在不脱离本公开的范围和精神的情况下，对以上实施例进行修改或者对部分技术特征进行等同替换。本公开的范围由所附权利要求来限定。

Claims (22)

  1. 一种发光器件，包括：
    像素界定层；
    多个子像素，每个子像素包括功能层，所述多个子像素的功能层包括被所述像素界定层间隔开的相邻的第一子像素的功能层和第二子像素的功能层；和
    阻挡件，设置在所述像素界定层上。
  2. 根据权利要求1所述的发光器件，其中，
    所述阻挡件包括第一部分和第二部分，所述第一部分的材料与所述第一子像素的功能层的至少一部分的材料相同，所述第二部分的材料与所述第二子像素的功能层的至少一部分的材料相同，其中，所述第一部分和所述第二部分叠加在所述像素界定层上。
  3. 根据权利要求2所述的发光器件，其中，
    所述功能层包括发光层。
  4. 根据权利要求3所述的发光器件，其中，
    所述功能层还包括电子传输层和空穴传输层，所述发光层位于所述电子传输层与所述空穴传输层之间；
    在所述第一部分和所述第二部分均包括与所述电子传输层的材料相同的部分的情况下，所述第一部分所包括的与所述电子传输层的材料相同的部分与所述第二部分所包括的与所述电子传输层的材料相同的部分间隔开；
    在所述第一部分和所述第二部分均包括与所述空穴传输层的材料相同的部分的情况下，所述第一部分所包括的与所述空穴传输层的材料相同的部分与所述第二部分所包括的与所述空穴传输层的材料相同的部分间隔开。
  5. 根据权利要求4所述的发光器件，其中，
    所述第一部分包括与所述第一子像素的电子传输层、空穴传输层和发光层的材料分别相同的部分，所述第二部分包括与所述第二子像素的电子传输层、空穴传输层和 发光层的材料分别相同的部分。
  6. 根据权利要求1所述的发光器件，其中，
    所述阻挡件包括绝缘层。
  7. 根据权利要求1至6任意一项所述的发光器件，其中，
    所述阻挡件在所述像素界定层上所成的坡度角θ的范围为：1°<θ<60°。
  8. 根据权利要求2所述的发光器件，其中，
    所述第一部分为所述第一子像素的功能层延伸到所述像素界定层之上的部分，
    所述第二部分为所述第二子像素的功能层延伸到所述像素界定层之上的部分。
  9. 根据权利要求8所述的发光器件，其中，
    在所述第二部分覆盖所述第一部分的情况下，
    所述第一子像素为红色子像素，所述第二子像素为绿色子像素或蓝色子像素；或者，所述第一子像素为绿色子像素，所述第二子像素为蓝色子像素。
  10. 根据权利要求9所述的发光器件，其中，
    在所述多个子像素中，所述蓝色子像素的功能层和所述蓝色子像素的功能层的延伸部分的面积之和>所述红色子像素的功能层和所述红色子像素的功能层的延伸部分的面积之和>所述绿色子像素的功能层和所述绿色子像素的功能层的延伸部分的面积之和。
  11. 根据权利要求1或2所述的发光器件，其中，
    在所述第一子像素为红色子像素，所述第二子像素为绿色子像素的情况下，所述阻挡件的厚度范围为
    Figure PCTCN2018113390-appb-100001
    至
    Figure PCTCN2018113390-appb-100002
    在所述第一子像素为绿色子像素，所述第二子像素为蓝色子像素的情况下，所述阻挡件的厚度范围为
    Figure PCTCN2018113390-appb-100003
    至
    Figure PCTCN2018113390-appb-100004
    或者，
    在所述第一子像素为红色子像素，所述第二子像素为蓝色子像素的情况下，所述阻挡件的厚度范围为
    Figure PCTCN2018113390-appb-100005
    至
    Figure PCTCN2018113390-appb-100006
  12. 一种发光器件，包括，
    多个驱动晶体管，每个驱动晶体管包括第一电极；
    基板，位于所述多个驱动晶体管的一侧；
    多个有机发光二极管，位于所述多个驱动晶体管的与所述基板相对的另一侧；每个有机发光二极管包括第二电极、第三电极和功能层；所述第二电极与所述第一电极电性连接，所述功能层的至少一部分位于所述第二电极与所述第三电极之间，所述多个有机发光二极管至少包括被像素界定层间隔开的第一有机发光二极管和第二有机发光二极管，所述功能层至少包括发光层，所述发光层的远离所述驱动晶体管的一面的面积大于所述第二电极的远离所述驱动晶体管的一面的面积；以及
    阻挡件，位于所述像素界定层的远离所述驱动晶体管的一侧，所述阻挡件在所述基板上的投影与所述第二电极在所述基板上的投影间隔开，所述阻挡件包括与所述功能层的材料相同的部分。
  13. 根据权利要求12所述的发光器件，其中，
    所述第一电极为源极，
    所述驱动晶体管还包括栅极、漏极和半导体层；
    其中，所述半导体层在所述基板上的投影位于所述第二电极在所述基板上的投影之内。
  14. 根据权利要求12所述的发光器件，其中，
    所述功能层还包括空穴传输层和电子传输层，
    所述空穴传输层的远离所述驱动晶体管的一面的面积大于所述第二电极的远离所述驱动晶体管的一面的面积，所述电子传输层的远离所述驱动晶体管的一面的面积大于所述第二电极的远离所述驱动晶体管的一面的面积。
  15. 根据权利要求12所述的发光器件，其中，
    所述阻挡件在所述像素界定层上所成的坡度角θ的范围为：1°<θ<60°。
  16. 根据权利要求12所述的发光器件，其中，
    所述阻挡件包括第一部分和第二部分，所述第一部分的材料与所述第一有机发光 二极管的功能层的至少一部分的材料相同，所述第二部分的材料与所述第二有机发光二极管的功能层的至少一部分的材料相同，其中，所述第一部分和所述第二部分叠加在所述像素界定层上。
  17. 根据权利要求16所述的发光器件，其中，
    所述第一部分为所述第一有机发光二极管的功能层延伸到所述像素界定层之上的部分，
    所述第二部分为所述第二有机发光二极管的功能层延伸到所述像素界定层之上的部分。
  18. 根据权利要求16所述的发光器件，其中，
    在所述第二部分覆盖所述第一部分的情况下，
    所述第一有机发光二极管为红色有机发光二极管，所述第二有机发光二极管为绿色有机发光二极管或蓝色有机发光二极管；或者，所述第一有机发光二极管为绿色有机发光二极管，所述第二有机发光二极管为蓝色有机发光二极管。
  19. 根据权利要求18所述的发光器件，其中，
    在所述第一有机发光二极管为红色有机发光二极管，所述第二有机发光二极管为绿色有机发光二极管的情况下，所述阻挡件的厚度范围为
    Figure PCTCN2018113390-appb-100007
    至
    Figure PCTCN2018113390-appb-100008
    在所述第一有机发光二极管为绿色有机发光二极管，所述第二有机发光二极管为蓝色有机发光二极管的情况下，所述阻挡件的厚度范围为
    Figure PCTCN2018113390-appb-100009
    至
    Figure PCTCN2018113390-appb-100010
    或者，
    在所述第一有机发光二极管为红色有机发光二极管，所述第二有机发光二极管为蓝色有机发光二极管的情况下，所述阻挡件的厚度范围为
    Figure PCTCN2018113390-appb-100011
    至
    Figure PCTCN2018113390-appb-100012
  20. 一种显示装置，包括：如权利要求1至19任意一项所述的发光器件。
  21. 一种发光器件的制造方法，包括：
    在初始衬底结构上形成像素界定层，所述像素界定层形成有露出所述初始衬底结构的多个开口；以及
    在所述多个开口中形成用于多个子像素的功能层，并在所述像素界定层上形成阻 挡件。
  22. 根据权利要求21所述的制造方法，其中，
    在所述阻挡件的材料与所述多个子像素的功能层的至少部分材料相同的情况下，在形成所述多个子像素的功能层的过程中形成所述阻挡件。
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