WO2022057331A1 - 透光显示模组、显示面板及其制备方法 - Google Patents

透光显示模组、显示面板及其制备方法 Download PDF

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Publication number
WO2022057331A1
WO2022057331A1 PCT/CN2021/099177 CN2021099177W WO2022057331A1 WO 2022057331 A1 WO2022057331 A1 WO 2022057331A1 CN 2021099177 W CN2021099177 W CN 2021099177W WO 2022057331 A1 WO2022057331 A1 WO 2022057331A1
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Prior art keywords
light
pixel
layer
common electrode
substrate
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PCT/CN2021/099177
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English (en)
French (fr)
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许晓伟
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合肥维信诺科技有限公司
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Priority to KR1020227040715A priority Critical patent/KR20220162836A/ko
Publication of WO2022057331A1 publication Critical patent/WO2022057331A1/zh
Priority to US17/991,308 priority patent/US20230083071A1/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/822—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/352—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels the areas of the RGB subpixels being different
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/353—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels characterised by the geometrical arrangement of the RGB subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes

Definitions

  • the present application relates to the field of display, and in particular, to a light-transmitting display module, a display panel and a preparation method thereof.
  • the present application provides a light-transmitting display module, a display panel and a manufacturing method thereof, so that at least part of the display panel can be transparent and displayable, which facilitates under-screen integration of photosensitive components.
  • a first aspect of the present application provides a light-transmitting display module.
  • the light-transmitting display module includes: a substrate; a pixel definition layer located on the substrate, and the pixel definition layer includes an isolation structure and a pixel opening enclosed by the isolation structure;
  • the nucleation suppression layer is located on the side of the pixel definition layer away from the substrate, the nucleation suppression layer includes a plurality of suppression units, the first orthographic projection of the suppression units on the pixel definition layer covers at least part of the isolation structure, and at least part of the suppression units Discontinuously arranged with each other;
  • the first common electrode is arranged on the side of the pixel definition layer away from the substrate, and the second orthographic projection of the first common electrode on the pixel definition layer covers at least part of the area except the first orthographic projection.
  • a second aspect of the present application provides a display panel, the display panel has a first display area and a second display area, the light transmittance of the first display area is greater than the light transmittance of the second display area, and the display panel includes: the above-mentioned first aspect
  • the light-transmitting display module of any embodiment is located in the first display area.
  • a third aspect of the present application further provides a method for preparing a display panel, the display panel has a first display area and a second display area, the light transmittance of the first display area is greater than that of the second display area, and the method includes:
  • a pixel definition material layer on the substrate, patterning the pixel definition material layer to form a pixel definition layer, and the pixel definition layer includes an isolation structure and a pixel opening enclosed by the isolation structure;
  • a mask is arranged on the side of the pixel definition layer away from the substrate, the mask has a mask opening, and the orthographic projection of the mask opening on the pixel definition layer covers at least part of the isolation structure;
  • a nucleation suppression layer is formed in the first display area by a mask, the nucleation suppression layer includes a plurality of suppression units, and the first orthographic projection of the suppression units on the pixel definition layer covers at least part of the isolation structure;
  • a first common electrode is formed on the side of the pixel definition layer away from the substrate, and the second orthographic projection of the first common electrode on the pixel definition layer covers at least a part of the area other than the first orthographic projection.
  • the light-transmitting display module includes a pixel definition layer, a nucleation suppression layer, and a first common electrode.
  • a first orthographic projection of the plurality of suppression units of the nucleation-suppressing layer on the pixel definition layer covers at least part of the isolation structure
  • a second orthographic projection of the first common electrode on the pixel definition layer covers at least a part of the area other than the first orthographic projection .
  • the suppression unit is correspondingly disposed on at least part of the isolation structure, so the first common electrode is not disposed on at least part of the isolation structure.
  • the distribution area of the first common electrode is small, which can improve the light transmittance of the light-transmitting display module.
  • the suppression unit is not arranged in the pixel opening, and a first common electrode is arranged in the pixel opening, which does not affect the normal display of the light-transmitting display module. Therefore, in the present application, without affecting the normal display of the light-transmitting display module, the light transmittance of the light-transmitting display module can be improved, and it is convenient for the photosensitive component to be integrated under the screen on one side of the light-transmitting display module.
  • FIG. 1 shows a schematic top view of a display panel according to an embodiment of the present application
  • Fig. 2 shows a partial enlarged view of the Q region in Fig. 1;
  • Figure 3 shows a cross-sectional view at A-A in Figure 2;
  • FIG. 4 shows a schematic diagram of a partial layer structure in a display panel according to an embodiment of the present application
  • FIG. 5 shows a flowchart of a method for fabricating a display panel provided by an embodiment of the present application
  • 6 to 12 are diagrams illustrating a molding process of the display panel.
  • a light-transmitting display area may be provided on the above-mentioned electronic device, and the photosensitive component may be arranged on the back of the light-transmitting display area, so as to ensure the normal operation of the photosensitive component, a full-screen display of the electronic device can be realized.
  • the material of the functional layer of the light-transmitting area of the display panel is usually selected from a light-transmitting material.
  • the anode of the light-transmitting area is made of indium tin oxide (Indium Tin Oxide, ITO) material.
  • ITO Indium Tin Oxide
  • the embodiments of the present application provide a light-transmitting display module, a display panel, and a manufacturing method thereof.
  • the following will describe each embodiment of the light-transmitting display module, the display panel, and the manufacturing method thereof with reference to the accompanying drawings. .
  • Embodiments of the present application provide a display device including a display panel.
  • the display device can be, but is not limited to, electronic devices such as mobile phones and tablet computers.
  • the display panel may be an organic light emitting diode (Organic Light Emitting Diode, OLED) display panel.
  • OLED Organic Light Emitting Diode
  • An embodiment of the present application provides a display panel, which can be used in the above-mentioned display device.
  • the display panel includes a first display area AA1 and a second display area AA2, and the light transmittance of the first display area AA1 is greater than that of the second display area AA2.
  • Light transmittance, that is, the first display area AA1 is a light-transmitting display area.
  • the display panel may further include a non-display area NA surrounding the first display area AA1 and the second display area AA2.
  • the first display area AA1 is circular, rectangular or other special shapes.
  • the first display area AA1 can be set in various positions, for example, the first display area AA1 is located in the middle area of the top of the display panel, or the first display area AA1 is close to the corner area of the display panel.
  • the light transmittance of the first display area AA1 is greater than or equal to 15%.
  • the transmittance of each functional film layer in the first display area AA1 in this embodiment is greater than 50%. %, and even at least some of the functional film layers have a light transmittance greater than 90%.
  • the light transmittance of the first display area AA1 is greater than that of the second display area AA2, so that the display panel 100 can integrate a photosensitive component on the back of the first display area AA1 to realize, for example, a camera
  • the photosensitive components are integrated under the screen, and at the same time, the first display area AA1 can display pictures, which increases the display area of the display panel 100 and realizes the full-screen design of the display device.
  • the photosensitive component may not be limited to an image acquisition device.
  • the photosensitive component may also be an infrared sensor, a proximity sensor, an infrared lens, and a flood light sensing element. , ambient light sensors, and light sensors such as dot matrix projectors.
  • the display device may also integrate other components on the lower surface of the display panel, such as an earpiece, a speaker, and the like.
  • FIG. 2 a light-transmitting display module is disposed in the first display area AA1 to improve the light transmittance of the first display area AA1 .
  • FIG. 2 and FIG. 3 show the boundary line between the first display area AA1 and the second display area AA2 with a dashed line, and the dashed line is not enough to limit the structure of the display panel according to the embodiment of the present application.
  • a light-transmitting display module includes: a substrate 101;
  • the layer 100 includes an isolation structure 110 and a pixel opening 120 surrounded by the isolation structure 110 ;
  • the nucleation suppression layer 200 is located on the side of the pixel definition layer 100 away from the substrate 101 , and includes a plurality of suppression units 210 .
  • the first orthographic projection on the definition layer 100 covers at least part of the isolation structure 110, and at least part of the suppression units 210 are arranged discontinuously with each other; the first common electrode 300 is located on the side of the pixel definition layer 100 away from the substrate 101, and the first The second orthographic projection of the common electrode 300 on the pixel definition layer 100 covers at least a part of the area other than the first orthographic projection.
  • the light-transmitting display module includes a pixel definition layer 100 , a nucleation suppression layer 200 and a first common electrode 300 .
  • the first orthographic projection of the plurality of suppression units 210 of the nucleation suppression layer 200 on the pixel definition layer 100 covers at least part of the isolation structure 110
  • the second orthographic projection of the first common electrode 300 on the pixel definition layer 100 covers all but the first positive projection. At least part of the area outside the projection.
  • the suppressing unit 210 is disposed on at least part of the isolation structure 110 , so the first common electrode 300 is not disposed on at least part of the isolation structure 110 , which can reduce the distribution area of the first common electrode 300 in the light-transmitting display module.
  • the distribution area of the first common electrode 300 is reduced, which can improve the light transmittance of the light-transmitting display module.
  • the suppression unit 210 is not disposed in the pixel opening 120, and the pixel opening 120 is provided with a first common electrode 300, which does not affect the normal display of the light-transmitting display module.
  • the light transmittance of the light-transmitting display module can be improved, and it is convenient for the photosensitive component to be integrated under the screen on one side of the light-transmitting display module.
  • the nucleation suppression layer 200 of the light-transmitting display module may directly contact the pixel definition layer 100 , or other layer structures may be provided between the nucleation suppression layer 200 and the pixel definition layer 100 .
  • a structure such as a carrier layer is disposed between the nucleation suppression layer 200 and the pixel definition layer 100 .
  • the carrier layer refers to the functions of injection, transport and blocking of carriers (holes or electrons).
  • the carrier-dependent film layer refers to the functions of injection, transport and blocking of carriers (holes or electrons).
  • the carrier layer may include a hole injection layer (Hole Inject Layer, HIL), a hole transport layer (Hole Transport Layer, HTL), an electron blocking layer (Electron Blocking Layer, EBL), an electron injection layer At least one of (Electron Inject Layer, EIL), electron transport layer (Electron Transport Layer, ETL), and hole blocking layer (Hole Blocking Layer, HBL).
  • HIL hole injection layer
  • HTL hole transport layer
  • EBL electron blocking layer
  • HBL electron injection layer At least one of (Electron Inject Layer, EIL), electron transport layer (Electron Transport Layer, ETL), and hole blocking layer (Hole Blocking Layer, HBL).
  • the first common electrode 300 is located on the side of the pixel definition layer 100 away from the substrate 101 , and the first common electrode 300 may be in direct contact with the isolation structure of the pixel definition layer 100 , or may be disposed between the first common electrode 300 and the pixel definition layer 100 There are other layer structures, such as the above-mentioned carrier layer, but it can be understood that the first common electrode is disposed on the side of the light-emitting layer away from the substrate 101, and the pixel electrode, the light-emitting layer and the common electrode form a light-emitting device to realize the light-emitting function .
  • the nucleation inhibiting layer 200 is, for example, an optical outcoupling coating.
  • the nucleation inhibiting layer 200 can be selectively deposited on the isolation structure 110 by means of evaporation (including thermal evaporation and electron beam evaporation), photolithography, printing and the like.
  • the material of the nucleation inhibiting layer 200 includes small molecular organic compounds, polymers, organometallic compounds and/or inorganic compounds and elements.
  • the nucleation inhibiting layer 200 makes certain materials such as magnesium less likely to deposit on its surface.
  • magnesium is not easily deposited on the surface of the nucleation inhibiting layer 200 .
  • the material of the first common electrode 300 includes, for example, magnesium, and the nucleation inhibiting layer 200 is used to inhibit the first common electrode 300 from being formed on its own surface. That is, the first common electrode 300 is suppressed from being formed on the suppression unit 210 , and the first common electrode 300 will not be formed on the surface of the suppression unit 210 away from the isolation structure 110 .
  • the first common electrode 300 After the nucleation suppression layer 200 is formed on the isolation structure 110 , and the first common electrode 300 is continuously formed on the pixel definition layer 100 , the first common electrode 300 will not be formed on the suppression unit 210 , so at least part of the isolation structure 110 is formed. Not covered by the first common electrode 300 .
  • the first common electrode 300 includes a body portion 310 and a plurality of hollow portions 320 penetrating the body portion 310 and spaced apart from each other.
  • the hollow portions 320 are thicker than the light-transmitting display module.
  • the orthographic projection in the direction covers at least part of the orthographic projection of the isolation structure 110 in the thickness direction, and the suppression unit 210 is located in the hollow portion 320 .
  • the plurality of hollow parts 320 are arranged at intervals, so that the first common electrode 300 can form a continuous whole layer through the body part 310 between two adjacent hollow parts 320 .
  • the first common electrodes 300 are connected to each other.
  • a hollow portion 320 is disposed on the first common electrode 300
  • a suppressing unit 210 is disposed in the hollow portion 320 , which can reduce the area of the first common electrode 300 and improve the light transmittance of the light transmission module.
  • the material of the first common electrode 300 includes magnesium, and the weight ratio of magnesium is greater than or equal to 95%.
  • the proportion of magnesium in the material of the first common electrode 300 is relatively high, which can improve the light transmittance of the first common electrode 300 .
  • the thickness of the nucleation suppression layer 200 is 10 angstroms to 100 angstroms.
  • the thickness of the nucleation inhibiting layer 200 is within the above range, it can not only ensure that the surface of the nucleation inhibiting layer 200 has a sufficiently small adhesion, so that the first common electrode 300 cannot be formed on the surface of the inhibiting unit 210; If the thickness of the nucleus suppression layer is too large, the suppression unit 210 will spread to the non-designated area, and the coverage area of the suppression unit 210 will be enlarged.
  • the size of the suppression unit 210 is not limited, as long as the suppression unit 210 is located in the isolation structure 110 and not located in the pixel opening 120 , and does not affect the formation of the first common electrode 300 in the pixel opening 120 .
  • the minimum width of the suppression unit 210 is greater than or equal to 5 ⁇ m.
  • the suppression unit 210 has a larger area, which can improve the light transmittance of the light-transmitting display module.
  • the minimum distance between the suppression unit 210 and the pixel opening 120 is greater than or equal to 10 ⁇ m.
  • the minimum distance between the suppressing unit 210 and the pixel opening 120 is within the above range, which can prevent the suppressing unit 210 from spreading to the pixel opening 120 , thereby preventing the first common electrode 300 from being unable to be formed in the pixel opening 120 and affecting the display.
  • the display panel further includes a second common electrode 500 located in the second display area AA2, and the second common electrode 500 includes a magnesium-silver alloy layer.
  • the second common electrode 500 of the second display area AA2 includes an American silver alloy layer, and the American silver alloy layer has good electrical conductivity, which can improve the viewing angle polarization and display of the second display area AA2 uniformity.
  • the weight ratio of magnesium and silver ranges from 1/15 to 1/9.
  • the light-transmitting display module further includes a first pixel group 400, the first pixel group 400 includes a first type of sub-pixels 410 and a second type of sub-pixels 420, and a plurality of second type of sub-pixels 420 distributed around the periphery of the first type of sub-pixels 410 .
  • the suppression unit 210 is located on the peripheral side of the first type of sub-pixels 410 , and the suppression unit 210 is located between two adjacent second-type sub-pixels 420 .
  • the suppression unit 210 is disposed on the peripheral side of the first type of sub-pixels 410, and is located between two adjacent second-type sub-pixels 420.
  • the distribution of the suppression units 210 is relatively scattered, which can improve the The light transmittance of the light-transmitting display module and the overcurrent capability of the first common electrode 300 .
  • the plurality of second-type sub-pixels 420 are evenly distributed on the periphery of the first-type sub-pixels 410 .
  • the suppression units 210 are uniformly distributed on the periphery of the first type of sub-pixels 410 . It can improve the display effect.
  • four second-type sub-pixels 420 are arranged around the periphery of one first-type sub-pixel 410 , and the four second-type sub-pixels 420 are uniformly distributed on the periphery of the first-type sub-pixel 410 .
  • the first type of sub-pixels 410 are green sub-pixels
  • the second type of sub-pixels 420 include red sub-pixels and blue sub-pixels.
  • the light-transmitting display module includes a plurality of first pixel groups 400, and the plurality of first pixel groups 400 are distributed in an array along the first direction and the second direction, and in the first direction, two adjacent first pixel groups 400 are arranged in an array.
  • the first type of sub-pixels 410 are arranged between the pixel groups 400.
  • the first type of sub-pixels 410 are arranged between two adjacent first pixel groups 400.
  • the first type of sub-pixels 410 are distributed in an array along the first direction and the second direction. And in the first direction and the second direction, the red sub-pixels and the blue sub-pixels are alternately distributed.
  • the display panel includes red sub-pixels, blue sub-pixels and green sub-pixels.
  • the plurality of second-type sub-pixels 420 are arranged in an array along the first direction and the second direction, that is, the red sub-pixels and the blue sub-pixels are located in the same row and column and are arranged in an array along the first direction and the second direction. In the same row along the first direction, red subpixels and blue subpixels are alternately arranged, and in the same column along the second direction, red subpixels and blue subpixels are alternately arranged.
  • the first-type sub-pixels 410 arranged in sequence in the first direction are located between two adjacent rows of second-type sub-pixels 420, that is, the green sub-pixels are located between two adjacent rows of red sub-pixels and blue sub-pixels.
  • the first-type sub-pixels 410 arranged in sequence in the second direction are located between two adjacent columns of second-type sub-pixels 420, that is, the green sub-pixels are located between two adjacent columns of red sub-pixels and blue sub-pixels.
  • the suppression unit 210 is provided between two adjacent second-type sub-pixels 420, that is, the suppression unit 210 is provided between the adjacent red sub-pixels and blue sub-pixels in the first direction , a suppression unit 210 is disposed between the adjacent red sub-pixels and blue sub-pixels in the second direction.
  • the sizes of the first type of sub-pixels 410 and the second type of sub-pixels 420 can be set in various ways.
  • the size of the first type of sub-pixels 410 is smaller than the size of the second type of sub-pixels 420 .
  • the sizes of the plurality of second-type sub-pixels 420 may be the same or different.
  • the light-transmitting display module further includes a first pixel circuit (not shown in the figure), and the first pixel circuit is electrically connected to the first type of sub-pixel 410 or the second type of sub-pixel 420 for driving the first pixel circuit A type of sub-pixel 410 or a second type of sub-pixel 420 is displayed.
  • the number of the first pixel circuits may be plural, and they are respectively electrically connected to the corresponding first type sub-pixels 410 and the second type sub-pixels 420 .
  • the circuit structure of the first pixel circuit is any one of a 2T1C circuit, a 7T1C circuit, a 7T2C circuit, or a 9T1C circuit.
  • 2T1C circuit refers to the pixel circuit including two thin film transistors (T) and one capacitor (C) in the pixel circuit, and other "7T1C circuits", “7T2C circuits”, “9T1C circuits” and so on.
  • the display panel 100 may further include a second pixel circuit, the second pixel circuit is located in the second display area AA2, and the second pixel circuit is electrically connected to the sub-pixels of the second display area AA2 for driving the second display Subpixel display of area AA2.
  • the circuit structure of the second pixel circuit may be any one of a 2T1C circuit, a 7T1C circuit, a 7T2C circuit, or a 9T1C circuit.
  • the light-transmitting display module further includes a substrate 101 and a device layer (not shown in the figure), the device layer is located on the substrate 101, and the first pixel circuit is located on the device layer.
  • the pixel definition layer 100 is located on the device layer.
  • the substrate 101 may be made of light-transmitting materials such as glass and polyimide (PI).
  • the device layer may include pixel circuitry for driving the display of each sub-pixel.
  • the pixel opening 120 of the pixel definition layer 100 includes a first pixel opening and a second pixel opening.
  • the pixel opening 120 includes a first pixel opening and a second pixel opening located in the first display area AA1.
  • the pixel opening 120 further includes a third pixel opening located in the second display area AA2.
  • the first type of sub-pixel 410 includes a first light emitting structure 412 and a first pixel electrode 411, the first light emitting structure 412 is located at the first pixel opening, and the first light emitting structure 412 is located on the side of the first common electrode 300 facing the substrate 101,
  • the first pixel electrode 411 is located on the side of the first light emitting structure 412 facing the substrate 101
  • the second type of sub-pixel 420 includes a second light emitting structure 422 and a second pixel electrode 421, and the second light emitting structure 422 is located in the second pixel opening 120,
  • the second light emitting structure 422 is located on the side of the first common electrode 300 facing the substrate 101
  • the second pixel electrode 421 is located on the side of the second light emitting structure 422 facing the substrate 101 .
  • the first light emitting structure 412 is disposed between the first pixel electrode 411 and the first common electrode 300, and the first pixel electrode 411 and the first common electrode 300 can drive the first light emitting structure 412 when powered glow.
  • a second light emitting structure 422 is disposed between the second pixel electrode 421 and the first common electrode 300 , and the second pixel electrode 421 and the first common electrode 300 can drive the second light emitting structure 422 to emit light when powered.
  • the suppressing unit 210 is located in the isolation structure 110 , and the first common electrode 300 is not disposed on a part of the surface of the isolation structure 110 , which will not affect the light emission of the first light emitting structure 412 and the second light emitting structure 422 .
  • the first light-emitting structure 412 and the second light-emitting structure 422 may respectively include an OLED light-emitting layer, and according to the design requirements of the first light-emitting structure 412 and the second light-emitting structure 422, each may further include a hole injection layer, a hole transport layer, an electron At least one of an injection layer or an electron transport layer.
  • the first pixel electrode 411 and/or the second pixel electrode 421 are light-transmitting electrodes.
  • the first pixel electrode 411 and/or the second pixel electrode 421 include an indium tin oxide (Indium Tin Oxide, ITO) layer or an indium zinc oxide layer.
  • the first pixel electrode 411 and/or the second pixel electrode 421 are reflective electrodes, including a first light-transmitting conductive layer, a reflective layer on the first light-transmitting conductive layer, and a second light-transmitting conductive layer on the reflective layer Light-transmitting conductive layer.
  • the first light-transmitting conductive layer and the second light-transmitting conductive layer may be ITO, indium zinc oxide, etc.
  • the reflective layer may be a metal layer, for example, made of silver.
  • the second pixel electrode 421 can be configured to use the same material as the first pixel electrode 411 .
  • the orthographic projection of each first light emitting structure 412 on the substrate 101 is composed of one first graphic unit or composed of two or more first graphic units spliced together, and the first graphic unit includes At least one selected from the group consisting of circle, oval, dumbbell, gourd, and rectangle.
  • the orthographic projection of each first pixel electrode 411 on the substrate 101 is composed of one second graphic unit or composed of two or more second graphic units spliced together, and the second graphic unit includes At least one selected from the group consisting of circle, oval, dumbbell, gourd, and rectangle.
  • the orthographic projection of each second light emitting structure 422 on the substrate 101 is composed of one third graphic unit or composed of two or more third graphic units spliced together, and the third graphic unit includes At least one selected from the group consisting of circle, oval, dumbbell, gourd, and rectangle.
  • the orthographic projection of each second pixel electrode 421 on the substrate 101 is composed of one fourth graphic unit or a mosaic of two or more fourth graphic units, and the fourth graphic unit includes At least one selected from the group consisting of circle, oval, dumbbell, gourd, and rectangle.
  • the light-transmitting display module may further include an encapsulation layer, a polarizer and a cover plate located above the encapsulation layer, or a cover plate may be directly disposed above the encapsulation layer without a polarizer, or at least in the first display area.
  • a cover plate is placed directly above the encapsulation layer of AA1, and no polarizer is required to prevent the polarizer from affecting the light collection amount of the photosensitive element arranged under the corresponding first display area AA1.
  • polarized light can also be arranged above the encapsulation layer of the first display area AA1 piece.
  • an embodiment of the present application provides a method for manufacturing a display panel.
  • the display panel has a first display area AA1 and a second display area AA2, and the light transmittance of the first display area AA1 is greater than that of the second display area AA2
  • the light transmittance, the preparation method of the display panel includes:
  • Step S501 forming a pixel definition material layer on the substrate 101 , and patterning the pixel definition material layer to form the pixel definition layer 100 .
  • Step S502 Disposing a mask 600 on the side of the pixel definition layer 100 away from the substrate 101, the mask 600 has a mask opening 610, and the orthographic projection of the mask opening 610 on the pixel definition layer 100 covers at least part of the isolation structure 110 .
  • Step S503 forming the nucleation suppression layer 200 in the first display area AA1 through the mask 600 , the nucleation suppression layer 200 includes a plurality of suppression units 210 , and the first orthographic projection of the suppression units 210 on the pixel definition layer 100 covers at least part of the Isolated structure 110 .
  • Step S504 forming the first common electrode 300 on the side of the pixel definition layer 100 away from the substrate 101 , and the second orthographic projection of the first common electrode 300 on the pixel definition layer 100 covers at least part of the area except the first orthographic projection.
  • a formed display panel is manufactured by using the method for manufacturing a display panel according to the embodiment of the present application.
  • the plurality of suppressing units 210 of the nucleation suppressing layer 200 are located on at least part of the isolation structure 110 , and the first common electrode 300 is located at at least a part except the suppressing unit 210 . area.
  • the suppressing unit 210 is disposed on at least part of the isolation structure 110, so the first common electrode 300 is not disposed on at least part of the isolation structure 110.
  • the distribution area of the first common electrode 300 is small, which can improve the light transmittance of the light-transmitting display module.
  • the suppression unit 210 is not disposed in the pixel opening 120, and the pixel opening 120 is provided with a first common electrode 300, which does not affect the normal display of the light-transmitting display module. Therefore, in the present application, without affecting the normal display of the light-transmitting display module, the light transmittance of the light-transmitting display module can be improved, and it is convenient for the photosensitive component to be integrated under the screen on one side of the light-transmitting display module.
  • the preparation method of the display panel further includes: forming a second common electrode 500 on the side of the pixel definition layer 100 away from the substrate 101, and the second common electrode 500 is formed on the second display panel.
  • the second common electrode 500 includes a magnesium-silver alloy layer, which can ensure the conductivity of the second common electrode 500 and improve the display effect of the display panel.
  • the manufacturing method of the display panel provided by the embodiment of the present application includes:
  • Step 1 As shown in FIG. 6 , a first pixel electrode 411 and a second pixel electrode 421 are formed on the array substrate.
  • the array substrate includes, for example, a substrate 101 and a device layer.
  • Step 2 As shown in FIG. 7 , the pixel definition layer 100 is formed on the first pixel electrode 411 and the second pixel electrode 421 .
  • the pixel definition layer 100 includes an isolation structure 110 and a pixel opening 120 surrounded by the isolation structure 110 .
  • Step 3 As shown in FIG. 8 , a light-emitting structure is formed in the pixel opening 120 .
  • the light emitting structure includes a first light emitting structure 412 and a second light emitting structure 422 .
  • Step 4 As shown in FIG. 9 , a second common electrode 500 is formed on the pixel definition layer 100 .
  • the second common electrode 500 is located in the second display area AA2.
  • Step 5 As shown in FIG. 10 , cover the mask plate 600 on the pixel definition layer 100 , the mask plate 600 has a mask opening 610 , and the orthographic projection of the mask opening 610 on the pixel definition layer 100 covers at least part of the isolation structure 110 .
  • Step 6 As shown in FIG. 11 , a nucleation suppression layer 200 is formed in the first display area AA1 by means of evaporation or printing.
  • the nucleation suppression layer 200 includes a plurality of suppression units 210 , and the suppression units 210 are formed through the mask openings 610 on the side of the isolation structure 110 away from the substrate 101 .
  • Step 7 As shown in FIG. 12 , a first common electrode 300 is formed on the side of the pixel definition layer 100 away from the substrate 101 , and the second orthographic projection of the first common electrode 300 on the pixel definition layer 100 covers the first orthographic projection at least part of the area.
  • step 6 may be performed directly after step 3 to form the nucleation inhibiting layer 200, and then the same steps are used to form The first common electrode 300 and the second common electrode 500 .

Abstract

一种透光显示模组及其制备方法，透光显示模组包括：衬底（101）；像素定义层（100），位于衬底（101）上，像素定义层（100）包括隔离结构（110）及由隔离结构（110）围合形成的像素开口（120）；成核抑制层（200），位于像素定义层（100）背离衬底（101）的一侧，成核抑制层（200）包括多个抑制单元（210），抑制单元（210）在像素定义层（100）上的第一正投影覆盖至少部分隔离结构（110），且至少部分的抑制单元（210）相互不连续设置；第一公共电极（300），位于像素定义层（100）背离衬底（101）的一侧，且第一公共电极（300）在像素定义层（100）上的第二正投影覆盖除第一正投影以外的至少部分区域。在不影响透光显示模组正常显示的情况下，能够提高透光显示模组的透光率，便于感光组件在透光显示模组的一侧实现屏下集成。

Description

透光显示模组、显示面板及其制备方法
相关申请的交叉引用
本申请要求享有于2020年09月17日提交的名称为“透光显示模组、显示面板及其制备方法”的中国专利申请第202010979680.1号的优先权，该申请的全部内容通过引用并入本文中。
技术领域
本申请涉及显示领域，具体涉及一种透光显示模组、显示面板及其制备方法。
背景技术
随着电子设备的快速发展，用户对屏占比的要求越来越高，使得电子设备的全面屏显示受到业界越来越多的关注。
传统的电子设备如手机、平板电脑等，由于需要集成诸如前置摄像头、听筒以及红外感应元件等。现有技术中，可通过在显示屏上开槽(Notch)或开孔，外界光线可通过屏幕上的开槽或开孔进入位于屏幕下方的感光元件。但是这些电子设备均不是真正意义上的全面屏，并不能在整个屏幕的各个区域均进行显示，例如其前置摄像头对应区域不能显示画面。
发明内容
本申请提供一种透光显示模组、显示面板及其制备方法，实现显示面板的至少部分区域可透光且可显示，便于感光组件的屏下集成。
本申请第一方面提供一种透光显示模组，透光显示模组包括：衬底；像素定义层，位于衬底上，像素定义层包括隔离结构及由隔离结构围合形成的像素开口；成核抑制层，位于像素定义层背离衬底的一侧，成核抑制 层包括多个抑制单元，抑制单元在像素定义层上的第一正投影覆盖至少部分隔离结构，且至少部分的抑制单元相互不连续设置；第一公共电极，设置于像素定义层背离衬底的一侧，且第一公共电极在像素定义层上的第二正投影覆盖除第一正投影以外的至少部分区域。
本申请第二方面提供一种显示面板，显示面板具有第一显示区和第二显示区，第一显示区的透光率大于第二显示区的透光率，显示面板包括：上述第一方面任一实施例的透光显示模组，位于第一显示区。
本申请第三方面还提供一种显示面板的制备方法，显示面板具有第一显示区和第二显示区，第一显示区的透光率大于第二显示区的透光率，方法包括：
在衬底上形成像素定义材料层，对像素定义材料层进行图案化处理形成像素定义层，像素定义层包括隔离结构及由隔离结构围合形成的像素开口；
在像素定义层背离衬底的一侧设置掩膜板，掩膜板具有掩模开口，掩模开口在像素定义层上的正投影覆盖至少部分隔离结构；
在第一显示区通过掩膜板形成成核抑制层，成核抑制层包括多个抑制单元，抑制单元在像素定义层上的第一正投影覆盖至少部分隔离结构；
在像素定义层背离衬底的一侧形成第一公共电极，第一公共电极在像素定义层上的第二正投影覆盖除第一正投影以外的至少部分区域。
根据本申请实施例提供的透光显示模组，透光显示模组包括像素定义层、成核抑制层和第一公共电极。成核抑制层的多个抑制单元在像素定义层上的第一正投影覆盖至少部分隔离结构，第一公共电极在像素定义层上的第二正投影覆盖除第一正投影以外的至少部分区域。抑制单元对应设置于至少部分隔离结构上，因此至少部分隔离结构上未设置第一公共电极。第一公共电极的分布面积小，能够提高透光显示模组的透光率。抑制单元未设置于像素开口，像素开口内设置有第一公共电极，不影响透光显示模组的正常显示。因此本申请中，在不影响透光显示模组正常显示的情况下，能够提高透光显示模组的透光率，便于感光组件在透光显示模组的一侧实现屏下集成。
附图说明
图1示出根据本申请一种实施例的显示面板的俯视示意图；
图2示出图1中Q区域的局部放大图；
图3示出图2中A-A处的剖视图；
图4示出本申请实施例的显示面板中部分层结构的示意图；
图5示出本申请实施例提供的一种显示面板制备方法的流程图；
图6至图12示出显示面板的成型过程图。
具体实施方式
下面将详细描述本申请的各个方面的特征和示例性实施例，为了使本申请的目的、技术方案及优点更加清楚明白，以下结合附图及具体实施例，对本申请进行进一步详细描述。应理解，此处所描述的具体实施例仅被配置为解释本申请，并不被配置为限定本申请。
在诸如手机和平板电脑等电子设备上，需要在设置显示面板的一侧集成诸如前置摄像头、红外光传感器、接近光传感器等感光组件。在一些实施例中，可以在上述电子设备上设置透光显示区，将感光组件设置在透光显示区背面，在保证感光组件正常工作的情况下，实现电子设备的全面屏显示。
在透光显示区内，为了具有较高的透光率，显示面板的透光区域的功能层的材料通常选用透光材料。例如透光区的阳极选用氧化铟锡(Indium Tin Oxide、ITO)材料制成。但是由于阴极的透光率较低，难以在保证显示效果的情况下，提高透光显示区的透光率。
为解决上述问题，本申请实施例提供了一种透光显示模组、显示面板及其制备方法，以下将结合附图对透光显示模组、显示面板及其制备方法的各实施例进行说明。
本申请实施例提供一种显示装置，包括显示面板。显示装置可以但不仅限于为手机、平板电脑等电子设备。
显示面板可以是有机发光二极管(Organic Light Emitting Diode，OLED)显示面板。
本申请实施例提供一种显示面板，该显示面板可以用于上述的显示装置。
如图1和图2所示，根据本申请实施例提供的显示面板，显示面板包括第一显示区AA1和第二显示区AA2，第一显示区AA1的透光率大于第二显示区AA2的透光率，即第一显示区AA1为透光显示区。
可选的，在另一些实施例中，显示面板还可以包括围绕第一显示区AA1、第二显示区AA2的非显示区NA。
第一显示区AA1的形状设置有多种，例如第一显示区AA1区为圆形、矩形或其他异形。第一显示区AA1区的设置位置有多种，例如第一显示区AA1位于显示面板顶部的中间区域，或者第一显示区AA1靠近显示面板的拐角区域等。
本申请中，第一显示区AA1的透光率大于或等于15％。为确保第一显示区AA1的透光率大于15％，甚至大于40％，甚至具有更高的透光率，本实施例中第一显示区AA1的各个功能膜层的透光率均大于50％，甚至至少部分功能膜层的透光率均大于90％。
根据本申请实施例的显示面板100，第一显示区AA1的透光率大于第二显示区AA2的透光率，使得显示面板100在第一显示区AA1的背面可以集成感光组件，实现例如摄像头的感光组件的屏下集成，同时第一显示区AA1能够显示画面，提高显示面板100的显示面积，实现显示装置的全面屏设计。
感光组件的设置方式有多种，在一些实施例中，感光组件可以不限于是图像采集装置，例如在一些实施例中，感光组件也可以是红外传感器、接近传感器、红外镜头、泛光感应元件、环境光传感器以及点阵投影器等光传感器。此外，显示装置在显示面板的下表面还可以集成其它部件，例如是听筒、扬声器等。
请一并参阅图2和图3，图2中第一显示区AA1内设置有透光显示模组，以提高第一显示区AA1的透光率。图2和图3中以点划线示出第一显示区AA1和第二显示区AA2的分界线，点划线并不够成对本申请实施例显示面板结构上的限定。
具体的，如图2和图3所示，根据本申请实施例提供一种透光显示模组，透光显示模组包括：衬底101；像素定义层100，位于衬底101上，像素定义层100包括隔离结构110及由隔离结构110围合形成的像素开口120；成核抑制层200，位于像素定义层100背离衬底101的一侧，包括多个抑制单元210，抑制单元210在像素定义层100上的第一正投影覆盖至少部分隔离结构110，且至少部分的抑制单元210相互不连续设置；第一公共电极300，位于像素定义层100背离衬底101的一侧，且第一公共电极300在像素定义层100上的第二正投影覆盖除第一正投影以外的至少部分区域。
根据本申请实施例的透光显示模组，透光显示模组包括像素定义层100、成核抑制层200和第一公共电极300。成核抑制层200的多个抑制单元210在像素定义层100上的第一正投影覆盖至少部分隔离结构110，第一公共电极300在像素定义层100上的第二正投影覆盖除第一正投影以外的至少部分区域。抑制单元210设置于至少部分隔离结构110上，因此至少部分隔离结构110上未设置第一公共电极300，能够降低透光显示模组内第一公共电极300的分布面积。第一公共电极300的分布面积减小，能够提高透光显示模组的透光率。抑制单元210未设置于像素开口120，像素开口120内设置有第一公共电极300，不影响透光显示模组的正常显示。因此本申请中，在不影响透光显示模组正常显示的情况下，能够提高透光显示模组的透光率，便于感光组件在透光显示模组的一侧实现屏下集成。
可选的，透光显示模组的成核抑制层200可以直接和像素定义层100接触，或者，成核抑制层200和像素定义层100之间设置有其他层结构。例如成核抑制层200和像素定义层100之间设置有载流子层等结构，本文中，载流子层指用于实现载流子(空穴或电子)的注入、传输、阻挡等功能的载流子相关膜层。在一些实施例中，载流子层可以包括空穴注入层(Hole Inject Layer，HIL)、空穴传输层(Hole Transport Layer，HTL)、电子阻挡层(Electron Blocking Layer，EBL)、电子注入层(Electron Inject Layer，EIL)、电子传输层(Electron Transport Layer，ETL)、空穴 阻挡层(Hole Blocking Layer，HBL)中的至少之一。第一公共电极300位于像素定义层100背离衬底101的一侧，第一公共电极300可以直接和像素定义层100的隔离结构接触，或者，第一公共电极300和像素定义层100之间设置有其他层结构，如上述的载流子层，但是可以理解的是，第一公共电极设置于发光层背离衬底101的一侧，像素电极、发光层和公共电极形成发光器件，实现发光功能。
可选的，成核抑制层200例如为光学外耦合涂层。成核抑制层200可以选用蒸发(包括热蒸发和电子束蒸发)、光刻、印刷等方式选择性地沉积于隔离结构110上。
成核抑制层200的材料包括小分子有机化合物、聚合物、有机金属化合物和/或无机化合物和元素。成核抑制层200使得某些材料，例如镁不容易沉积在自身表面。例如当成核抑制层200的材料包括有机材料时，镁不容易沉积在成核抑制层200的表面。第一公共电极300的材料例如包括镁，成核抑制层200用于抑制第一公共电极300形成于其自身表面。即第一公共电极300被抑制形成于抑制单元210上，抑制单元210背离隔离结构110的表面不会形成第一公共电极300。当成核抑制层200形成于隔离结构110上后，继续将第一公共电极300形成于像素定义层100上时，第一公共电极300不会形成于抑制单元210上，因此至少部分隔离结构110上未被第一公共电极300覆盖。
如图4所示，在一些可选的实施例中，第一公共电极300包括本体部310及贯穿本体部310且相互间隔设置的多个镂空部320，镂空部320在透光显示模组厚度方向上的正投影覆盖至少部分隔离结构110在厚度方向上的正投影，抑制单元210位于镂空部320。
在这些可选的实施例中，多个镂空部320间隔设置，令第一公共电极300能够通过相邻两个镂空部320之间的本体部310形成连续的整层，不同像素开口120内的第一公共电极300相互连接。且第一公共电极300上设置有镂空部320，镂空部320内设置有抑制单元210，能够减小第一公共电极300的面积，提高透光模组的透光率。
第一公共电极300的材料包括镁，镁的重量占比大于或等于95％。第 一公共电极300的材料中镁的成分占比较高，能够提高第一公共电极300的透光率。
在一些可选的实施例中，成核抑制层200的厚度为10埃～100埃。成核抑制层200的厚度在上述范围之内时，既能够保证成核抑制层200表面具有足够小的附着力，使得第一公共电极300不能够形成于抑制单元210的表面；还能够避免成核抑制层的厚度过大导致抑制单元210蔓延至非指定区域，扩大抑制单元210的覆盖面积。
抑制单元210的尺寸不做限定，只要抑制单元210位于隔离结构110，抑制单元210不位于像素开口120，不影响第一公共电极300形成于像素开口120内即可。可选的，抑制单元210的最小宽度大于或等于5μm。抑制单元210的面积较大，能够提高透光显示模组的透光率。
在一些可选的实施例中，抑制单元210与像素开口120之间的最小距离大于或等于10μm。抑制单元210与像素开口120之间的最小距离在上述范围之内，能够避免抑制单元210蔓延至像素开口120，从而避免第一公共电极300不能够形成于像素开口120而影响显示。
根据本申请实施例提供的显示面板，显示面板还包括位于第二显示区AA2的第二公共电极500，第二公共电极500包括镁银合金层。在本申请实施例的显示面板中，第二显示区AA2的第二公共电极500包括美银合金层，美银合金层具有良好的导电能力，能够改善第二显示区AA2的视角色偏和显示均一性。
镁银合金层的材料中，镁和银的重量比范围为1/15～1/9。
在一些可选的实施例中，透光显示模组还包括第一像素组400，第一像素组400包括第一类子像素410和第二类子像素420，多个第二类子像素420环绕于第一类子像素410的周侧分布。抑制单元210位于第一类子像素410的周侧，且抑制单元210位于相邻的两个第二类子像素420之间。
在这些可选的实施例中，抑制单元210设置于第一类子像素410的周侧，且位于相邻的两个第二类子像素420之间，抑制单元210的分布较为分散，能提高透光显示模组的透光率和第一公共电极300的过流能力。
可选的，多个第二类子像素420在第一类子像素410的周侧均匀分布。抑制单元210在第一类子像素410的周侧均匀分布。能够提高显示效果。
可选的，一个第一类子像素410的周侧环绕设置有四个第二类子像素420，四个第二类子像素420在第一类子像素410的周侧均匀分布。
可选的，第一类子像素410为绿色子像素，第二类子像素420包括红色子像素和蓝色子像素。
可选的，透光显示模组包括多个第一像素组400，多个第一像素组400沿第一方向和第二方向阵列分布，且在第一方向上，相邻的两个第一像素组400之间设置有第一类子像素410，在第二方向上，相邻的两个第一像素组400之间设置有第一类子像素410，透光显示模组中的多个第一类子像素410沿第一方向和第二方向阵列分布。且在第一方向和第二方向上，红色子像素和蓝色子像素交替分布。
请继续参阅图2，显示面板包括红色子像素、蓝色子像素和绿色子像素。多个第二类子像素420沿第一方向和第二方向阵列排布，即红色子像素和蓝色子像素位于同一行和同一列并沿第一方向和第二方向阵列排布。在沿第一方向的同一行中，红色子像素和蓝色子像素交替排布，在沿第二方向的同一列中，红色子像素和蓝色子像素交替分布。在第一方向依次排布的第一类子像素410位于相邻的两行第二类子像素420之间，即绿色子像素位于相邻的两行红色子像素和蓝色子像素之间。在第二方向依次排布的第一类子像素410位于相邻的两列第二类子像素420之间，即绿色子像素位于相邻的两列红色子像素和蓝色子像素之间。在第一显示区AA1，相邻的两个第二类子像素420之间设置有抑制单元210，即在第一方向上相邻的红色子像素和蓝色子像素之间设置有抑制单元210，在第二方向上相邻的红色子像素和蓝色子像素之间设置有抑制单元210。
在第一像素组400中，第一类子像素410和第二类子像素420的尺寸的设置方式有多种，例如第一类子像素410的尺寸小于第二类子像素420的尺寸。多个第二类子像素420的尺寸可以相同或不同。
在一些实施例中，透光显示模组还包括第一像素电路(图中未示 出)，第一像素电路与第一类子像素410或第二类子像素420电连接，用于驱动第一类子像素410或第二类子像素420显示。第一像素电路的数量可以是多个，并且分别对应电连接至对应的第一类子像素410和第二类子像素420。
在一些实施例中，第一像素电路的电路结构是2T1C电路、7T1C电路、7T2C电路、或9T1C电路中的任一种。本文中，“2T1C电路”指像素电路中包括2个薄膜晶体管(T)和1个电容(C)的像素电路，其它“7T1C电路”、“7T2C电路”、“9T1C电路”等依次类推。
在一些实施例中，显示面板100还可以包括第二像素电路，第二像素电路位于第二显示区AA2，第二像素电路与第二显示区AA2的子像素电连接，用于驱动第二显示区AA2的子像素显示。在一些实施例中，第二像素电路的电路结构可以是2T1C电路、7T1C电路、7T2C电路、或9T1C电路中的任一种。
在一些实施例中，透光显示模组还包括衬底101和器件层(图中未示出)，器件层位于衬底101上，第一像素电路位于器件层。像素定义层100位于器件层上。
衬底101可以采用玻璃、聚酰亚胺(Polyimide，PI)等透光材料制成。器件层可以包括用于驱动各子像素显示的像素电路。
像素定义层100的像素开口120包括第一像素开口和第二像素开口。可选的，当透光显示模组用于显示面板时，像素开口120包括位于第一显示区AA1的第一像素开口和第二像素开口。像素开口120还包括位于第二显示区AA2的第三像素开口。
第一类子像素410包括第一发光结构412和第一像素电极411，第一发光结构412位于第一像素开口，且第一发光结构412位于第一公共电极300朝向衬底101的一侧，第一像素电极411位于第一发光结构412朝向衬底101的一侧；第二类子像素420包括第二发光结构422和第二像素电极421，第二发光结构422位于第二像素开口120，且第二发光结构422位于第一公共电极300朝向衬底101的一侧，第二像素电极421位于第二发光结构422的朝向衬底101的一侧。
在这些可选的实施例中，第一像素电极411和第一公共电极300之间设置有第一发光结构412，第一像素电极411和第一公共电极300供电时能够驱动第一发光结构412发光。同理，第二像素电极421和第一公共电极300之间设置有第二发光结构422，第二像素电极421和第一公共电极300供电时能够驱动第二发光结构422发光。抑制单元210位于隔离结构110，隔离结构110的部分表面上未设置第一公共电极300，不会影响第一发光结构412和第二发光结构422发光。
第一发光结构412和第二发光结构422分别可以包括OLED发光层，根据第一发光结构412和第二发光结构422的设计需要，各自还可以分别包括空穴注入层、空穴传输层、电子注入层或电子传输层中的至少一种。
在一些实施例中，第一像素电极411和/或第二像素电极421为透光电极。在一些实施例中，第一像素电极411和/或第二像素电极421包括氧化铟锡(Indium Tin Oxide，ITO)层或氧化铟锌层。在一些实施例中，第一像素电极411和/或第二像素电极421为反射电极，包括第一透光导电层、位于第一透光导电层上的反射层以及位于反射层上的第二透光导电层。其中，第一透光导电层、第二透光导电层可以是ITO、氧化铟锌等，反射层可以是金属层，例如是银材质制成。第二像素电极421可以配置为与第一像素电极411采用相同的材质。
在一些实施例中，每个第一发光结构412在衬底101上的正投影由一个第一图形单元组成或由两个或两个以上第一图形单元拼接组成，第一图形单元包括从由圆形、椭圆形、哑铃形、葫芦形、矩形组成的群组中选择的至少一个。
在一些实施例中，每个第一像素电极411在衬底101上的正投影由一个第二图形单元组成或由两个或两个以上第二图形单元拼接组成，第二图形单元包括从由圆形、椭圆形、哑铃形、葫芦形、矩形组成的群组中选择的至少一个。
在一些实施例中，每个第二发光结构422在衬底101上的正投影由一个第三图形单元组成或由两个或两个以上第三图形单元拼接组成，第三图形单元包括从由圆形、椭圆形、哑铃形、葫芦形、矩形组成的群组中选择 的至少一个。
在一些实施例中，每个第二像素电极421在衬底101上的正投影由一个第四图形单元组成或由两个或两个以上第四图形单元拼接组成，第四图形单元包括从由圆形、椭圆形、哑铃形、葫芦形、矩形组成的群组中选择的至少一个。
示例性地，透光显示模组还可以包括封装层和位于封装层上方的偏光片和盖板，也可以直接在封装层上方直接设置盖板，无需设置偏光片，或者至少在第一显示区AA1的封装层上方直接设置盖板，无需设置偏光片，避免偏光片影响对应第一显示区AA1下方设置的感光元件的光线采集量，当然，第一显示区AA1的封装层上方也可以设置偏光片。
如图5所示，本申请实施例提供了一种显示面板的制备方法，显示面板具有第一显示区AA1和第二显示区AA2，第一显示区AA1的透光率大于第二显示区AA2的透光率，显示面板的制备方法包括：
步骤S501：在衬底101上形成像素定义材料层，对像素定义材料层进行图案化处理形成像素定义层100，像素定义层100包括隔离结构110及由隔离结构110围合形成的像素开口120。
步骤S502：在像素定义层100背离衬底101的一侧设置掩膜板600，掩膜板600具有掩模开口610，掩模开口610在像素定义层100上的正投影覆盖至少部分隔离结构110。
步骤S503：在第一显示区AA1通过掩膜板600形成成核抑制层200，成核抑制层200包括多个抑制单元210，抑制单元210在像素定义层100上的第一正投影覆盖至少部分隔离结构110。
步骤S504：在像素定义层100背离衬底101的一侧形成第一公共电极300，第一公共电极300在像素定义层100上的第二正投影覆盖除第一正投影以外的至少部分区域。
利用本申请实施例的显示面板的制备方法制造成型的显示面板，成核抑制层200的多个抑制单元210位于至少部分隔离结构110上，第一公共电极300位于除抑制单元210以外的至少部分区域。抑制单元210设置于至少部分隔离结构110上，因此至少部分隔离结构110上未设置第一公共 电极300。第一公共电极300的分布面积小，能够提高透光显示模组的透光率。抑制单元210未设置于像素开口120，像素开口120内设置有第一公共电极300，不影响透光显示模组的正常显示。因此本申请中，在不影响透光显示模组正常显示的情况下，能够提高透光显示模组的透光率，便于感光组件在透光显示模组的一侧实现屏下集成。
可选的，在步骤S502之前或者步骤S504之后，显示面板的制备方法还包括：在像素定义层100背离衬底101的一侧形成第二公共电极500，第二公共电极500形成于第二显示区AA2。
第二公共电极500例如包括镁银合金层，能够保证第二公共电极500的导电能力，提高显示面板的显示效果。
以图3示出的显示面板为例，请一并参阅图6至图12，具体说明本申请提供的显示面板的制备方法，本申请实施例提供的显示面板的制备方法包括：
步骤一：如图6所示，在阵列基板上形成第一像素电极411和第二像素电极421。阵列基板例如包括衬底101和器件层。
步骤二：如图7所示，在第一像素电极411和第二像素电极421上形成像素定义层100。像素定义层100包括隔离结构110和由隔离结构110围合形成的像素开口120。
步骤三：如图8所示，在像素开口120内形成发光结构。发光结构包括第一发光结构412和第二发光结构422。
步骤四：如图9所示，在像素定义层100上形成第二公共电极500。第二公共电极500位于第二显示区AA2。
步骤五：如图10所示，在像素定义层100上覆盖掩膜板600，掩膜板600具有掩模开口610，掩模开口610在像素定义层100上的正投影覆盖至少部分隔离结构110。
步骤六：如图11所示，利用蒸镀或者印刷等方式在第一显示区AA1形成成核抑制层200，成核抑制层200包括多个抑制单元210，抑制单元210通过掩模开口610形成于隔离结构110背离衬底101的一侧。
步骤七：如图12所示，在像素定义层100背离衬底101的一侧形成第 一公共电极300，第一公共电极300在像素定义层100上的第二正投影覆盖除第一正投影以外的至少部分区域。
在另一些可选的实施例中，当第一公共电极300和第二公共电极500的材料相同时，在步骤三之后还可以直接进行步骤六形成成核抑制层200，然后利用相同的步骤形成第一公共电极300和第二公共电极500。
本说明书选取并具体描述这些实施例，是为了更好地解释本申请的原理和实际应用，从而使所属技术领域技术人员能很好地利用本申请以及在本申请基础上的修改使用。

Claims (20)

  1. 一种透光显示模组，包括：
    衬底；
    像素定义层，位于所述衬底上，所述像素定义层包括隔离结构及由所述隔离结构围合形成的像素开口；
    成核抑制层，位于所述像素定义层背离所述衬底的一侧，所述成核抑制层包括多个抑制单元，所述抑制单元在所述像素定义层上的第一正投影覆盖至少部分所述隔离结构，且至少部分的所述抑制单元相互不连续设置；
    第一公共电极，位于所述像素定义层背离所述衬底的一侧，且所述第一公共电极在所述像素定义层上的第二正投影覆盖除所述第一正投影以外的至少部分区域。
  2. 根据权利要求1所述的透光显示模组，其中，所述第一公共电极包括本体部及贯穿所述本体部且相互间隔设置的多个镂空部，所述镂空部在所述透光显示模组厚度方向上的正投影覆盖至少部分所述隔离结构在所述厚度方向上的正投影，所述抑制单元位于所述镂空部。
  3. 根据权利要求1所述的透光显示模组，其中，所述第一公共电极的材料包括镁，且所述镁的重量占比大于或等于95％。
  4. 根据权利要求1所述的透光显示模组，其中，所述成核抑制层的厚度为10埃～100埃。
  5. 根据权利要求1所述的透光显示模组，其中，所述抑制单元的最小宽度大于或等于5μm。
  6. 根据权利要求1所述的透光显示模组，其中，所述抑制单元与所述像素开口之间的最小距离大于或等于10μm。
  7. 根据权利要求1所述的透光显示模组，其中，所述透光显示模组还包括：
    第一像素组，包括第一类子像素和第二类子像素，多个所述第二类子像素环绕于所述第一类子像素的周侧分布；
    所述抑制单元位于所述第一类子像素的周侧，且所述抑制单元位于相邻的两个所述第二类子像素之间。
  8. 根据权利要求7所述的透光显示模组，其中，一个所述第一类子像素的周侧环绕设置有四个所述第二类子像素和四个所述抑制单元。
  9. 根据权利要求7所述的透光显示模组，其中，所述第一类子像素为绿色子像素，所述第二类子像素包括红色子像素和蓝色子像素。
  10. 根据权利要求7所述的透光显示模组，其中，所述像素开口包括第一像素开口和第二像素开口；
    所述第一类子像素包括第一发光结构和第一像素电极，所述第一发光结构位于所述第一像素开口，且所述第一发光结构位于所述第一公共电极朝向所述衬底的一侧，所述第一像素电极位于所述第一发光结构朝向所述衬底的一侧；
    所述第二类子像素包括第二发光结构和第二像素电极，所述第二发光结构位于所述第二像素开口，且所述第二发光结构位于所述第一公共电极朝向所述衬底的一侧，所述第二像素电极位于所述第二发光结构的朝向所述衬底的一侧。
  11. 根据权利要求10所述的透光显示模组，其中，每个所述第一发光结构在所述衬底上的正投影由一个第一图形单元组成或由两个或两个以上第一图形单元拼接组成，所述第一图形单元包括从由圆形、椭圆形、哑铃形、葫芦形、矩形组成的群组中选择的至少一个。
  12. 根据权利要求10所述的透光显示模组，其中，每个所述第一像素电极在所述衬底上的正投影由一个第二图形单元组成或由两个或两个以上第二图形单元拼接组成，所述第二图形单元包括从由圆形、椭圆形、哑铃形、葫芦形、矩形组成的群组中选择的至少一个。
  13. 根据权利要求10所述的透光显示模组，其中，每个所述第二发光结构在所述衬底上的正投影由一个第三图形单元组成或由两个或两个以上第三图形单元拼接组成，所述第三图形单元包括从由圆形、椭圆形、哑铃形、葫芦形、矩形组成的群组中选择的至少一个。
  14. 根据权利要求10所述的透光显示模组，其中，每个所述第二像素 电极在所述衬底上的正投影由一个第四图形单元组成或由两个或两个以上第四图形单元拼接组成，所述第四图形单元包括从由圆形、椭圆形、哑铃形、葫芦形、矩形组成的群组中选择的至少一个。
  15. 一种显示面板，所述显示面板具有第一显示区和第二显示区，所述第一显示区的透光率大于所述第二显示区的透光率，所述显示面板包括：
    权利要求1-14任一项所述的透光显示模组，位于所述第一显示区。
  16. 根据权利要求15所述的显示面板，其中，所述显示面板还包括位于所述第二显示区的第二公共电极，所述第二公共电极包括镁银合金层。
  17. 根据权利要求16所述的显示面板，其中，所述镁银合金层的材料中，镁和银的重量比范围为1/15～1/9。
  18. 一种显示面板的制备方法，所述显示面板具有第一显示区和第二显示区，所述第一显示区的透光率大于所述第二显示区的透光率，所述方法包括：
    在衬底上形成像素定义材料层，对所述像素定义材料层进行图案化处理形成像素定义层，所述像素定义层包括隔离结构及由所述隔离结构围合形成的像素开口；
    在所述像素定义层背离所述衬底的一侧设置掩膜板，所述掩膜板具有掩模开口，所述掩模开口在所述像素定义层上的正投影覆盖至少部分所述隔离结构；
    在所述第一显示区通过所述掩膜板形成成核抑制层，所述成核抑制层包括多个抑制单元，所述抑制单元在所述像素定义层上的第一正投影覆盖至少部分所述隔离结构；
    在所述像素定义层背离所述衬底的一侧形成第一公共电极，所述第一公共电极在所述像素定义层上的第二正投影覆盖除所述第一正投影以外的至少部分区域。
  19. 根据权利要求18所述的方法，其中，在所述像素定义层背离所述衬底的一侧设置掩膜板之前，所述方法还包括：
    在所述像素定义层背离所述衬底的一侧形成第二公共电极，所述第二公共电极形成于所述第二显示区。
  20. 根据权利要求18所述的方法，其中，在所述像素定义层背离所述衬底的一侧形成第一公共电极的步骤之后，所述方法还包括：
    在所述像素定义层背离所述衬底的一侧形成第二公共电极，所述第二公共电极形成于所述第二显示区。
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