US20230083071A1 - Light-transmitting display module, display panel and method for manufacturing the same - Google Patents

Light-transmitting display module, display panel and method for manufacturing the same Download PDF

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US20230083071A1
US20230083071A1 US17/991,308 US202217991308A US2023083071A1 US 20230083071 A1 US20230083071 A1 US 20230083071A1 US 202217991308 A US202217991308 A US 202217991308A US 2023083071 A1 US2023083071 A1 US 2023083071A1
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pixel
light
common electrode
substrate
sub
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Xiaowei Xu
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Hefei Visionox Technology Co Ltd
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Hefei Visionox Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H01L27/3246—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H01L51/5225—
    • H01L51/56—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/822—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/352—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels the areas of the RGB subpixels being different
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/353—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels characterised by the geometrical arrangement of the RGB subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H01L2227/323—
    • H01L27/3211—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes

Definitions

  • the present application relates to the field of display, and in particular, to a light-transmitting display module, a display panel and a method for manufacturing the display panel.
  • the present application provides a light-transmitting display module, a display panel and a method for manufacturing the display panel, so that at least an area of the display panel can be light-transmitting and used for display, thus facilitating under-screen integration of a photosensitive component.
  • a first aspect of the present application provides a light-transmitting display module including: a substrate; a pixel definition layer, located on the substrate, the pixel definition layer including an isolation structure and at least one pixel opening encircled by the isolation structure; a nucleation inhibiting layer, located on a side of the pixel definition layer facing away from the substrate, the nucleation inhibiting layer including a plurality of inhibiting units, a first orthographic projection of the inhibiting unit on the pixel definition layer covering at least a part of the isolation structure, and at least a part of the inhibiting units being spaced apart from one another; a first common electrode, located on the side of the pixel definition layer facing away from the substrate, a second orthographic projection of the first common electrode on the pixel definition layer covering at least a part of an area other than the first orthographic projection.
  • a second aspect of the present application provides a display panel including a first display area and a second display area.
  • a light transmittance of the first display area is greater than a light transmittance of the second display area.
  • the display panel includes the light-transmitting display module according to any embodiment in the above-mentioned first aspect.
  • the light-transmitting display module is located in the first display area.
  • a third aspect of the present application further provides a method for manufacturing a display panel, the display panel including a first display area and a second display area.
  • a light transmittance of the first display area is greater than a light transmittance of the second display area.
  • the method includes:
  • a pixel definition material layer on a substrate, and patterning the pixel definition material layer to form a pixel definition layer, the pixel definition layer including an isolation structure and at least one pixel opening encircled by the isolation structure;
  • the mask including at least one mask opening, and an orthographic projection of the mask opening on the pixel definition layer covering at least a part of the isolation structure;
  • nucleation inhibiting layer in the first display area by using the mask, the nucleation inhibiting layer including a plurality of inhibiting units, and a first orthographic projection of the inhibiting unit on the pixel definition layer covering at least a part of the isolation structure;
  • first common electrode on the side of the pixel definition layer facing away from the substrate, a second orthographic projection of the first common electrode on the pixel definition layer covering at least a part of an area other than the first orthographic projection.
  • the light-transmitting display module provided by the embodiments of the present application includes the pixel definition layer, the nucleation inhibiting layer and the first common electrode.
  • the first orthographic projections of the plurality of inhibiting units of the nucleation inhibiting layer on the pixel definition layer covers at least a part of the isolation structure.
  • the second orthographic projection of the first common electrode on the pixel definition layer covers at least a part of the area other than the first orthographic projection.
  • the inhibiting units are disposed on at least a part of the isolation structure. Therefore, the first common electrode is not disposed on at least a part of the isolation structure.
  • the occupation area of the first common electrode is small, so that the light transmittance of the light-transmitting display module can be improved.
  • the inhibiting unit is not disposed in the pixel opening, and the first common electrode is disposed in the pixel opening, so that the normal display operation of the light-transmitting display module is not affected. Therefore, in the present application, the light transmittance of the light-transmitting display module can be improved while the normal display operation of the light-transmitting display module is not affected, thus facilitating the under-screen integration of the photosensitive component on a side of the light-transmitting display module.
  • FIG. 1 is a top view of a display panel according to an embodiment of the present application.
  • FIG. 2 illustrates an enlarged partial view of the area Q shown in FIG. 1 .
  • FIG. 3 illustrates a cross-sectional view along the line A-A shown in FIG. 2 .
  • FIG. 4 illustrates a schematic view of a partial layer structure in a display panel according to an embodiment of the present application.
  • FIG. 5 illustrates a flowchart of a method for manufacturing a display panel according to an embodiment of the present application.
  • FIG. 6 to FIG. 12 are views illustrating a formation process of a display panel.
  • a photosensitive component e.g., a front camera, an infrared light sensor and a proximity light sensor, is required to be integrated on a side where a display panel is disposed.
  • a light-transmitting display area may be provided in the above-described electronic device, and the photosensitive component may be provided on a backside of the light-transmitting display area, so that the electronic device can implement full-screen display while the normal operation of the photosensitive component is ensured.
  • the material of a functional layer of the light-transmitting area of the display panel is usually a light-transmitting material.
  • an anode of the light-transmitting area is made of indium tin oxide (ITO) material.
  • ITO indium tin oxide
  • a light transmittance of a cathode is low, so that it is difficult to improve the light transmittance of the light-transmitting display area while a desired display effect is ensured.
  • embodiments of the present application provide a light-transmitting display module, a display panel and a method for manufacturing the display panel.
  • the embodiments of the light-transmitting display module, display panel and the method for manufacturing the display panel will be described below with reference to the accompanying drawings.
  • the embodiments of the present application provide a display apparatus including a display panel.
  • the display apparatus may be, but not limited to, an electronic device such as a cell phone or a tablet.
  • the display panel may be an organic light emitting diode (OLED) display panel.
  • OLED organic light emitting diode
  • the embodiments of the present application provide a display panel, which can be used in the above-mentioned display apparatus.
  • the display panel includes a first display area AA 1 and a second display area AA 2 .
  • a light transmittance of the first display area AA 1 is greater than a light transmittance of the second display area AA 2 , that is, the first display area AA 1 is a light-transmitting display area.
  • the display panel may further include a non-display area NA surrounding the first display area AA 1 and the second display area AA 2 .
  • the first display area AA 1 may be of various shapes, for example, the first display area AA 1 is circular, rectangular or of other irregular shapes.
  • the first display area AA 1 can be disposed in various positions, for example, the first display area AA 1 is located in the middle region of the top portion of the display panel, or the first display area AA 1 is close to a corner region of the display panel.
  • the light transmittance of the first display area AA 1 is greater than or equal to 15%.
  • light transmittances of functional film layers of the first display area AA 1 in the embodiments are each greater than 50%, and light transmittances of at least some of the functional film layers are even greater than 90%.
  • the light transmittance of the first display area AA 1 of the display panel 100 is greater than the light transmittance of the second display area AA 2 , so that a photosensitive component can be integrated on the backside of the first display area AA 1 of the display panel 100 , realizing the under-screen integration of a photosensitive component such as a camera, and at the same time, the first display area AA 1 can display images, which increases a display area of the display panel 100 and realizes a full-screen design of the display apparatus.
  • the photosensitive component may be configured in many manners.
  • the photosensitive component may not be limited to an image capturing apparatus.
  • the photosensitive component may be a light sensor such as an infrared sensor, a proximity sensor, an infrared lens, a flood sensing element, an ambient light sensor, and a dot matrix projector.
  • other components may be integrated on a lower surface of the display panel of the display apparatus, such as an earpiece or a speaker.
  • FIG. 2 and FIG. 3 As shown in FIG. 2 , a light-transmitting display module is disposed in the first display area AA 1 , so as to improve the light transmittance of the first display area AA 1 .
  • a boundary between the first display area AA 1 and the second display area AA 2 is illustrated as a dashed line, but the structure of the display panel according to the embodiments of the present application is not limited thereto.
  • a light-transmitting display module includes: a substrate 101 ; a pixel definition layer 100 located on the substrate 101 , the pixel definition layer 100 including an isolation structure 110 and at least one pixel opening 120 encircled by the isolation structure 110 ; a nucleation inhibiting layer located 200 on a side of the pixel definition layer 100 facing away from the substrate 101 , the nucleation inhibiting layer 200 including a plurality of inhibiting units 210 , a first orthographic projection of the inhibiting unit 210 on the pixel definition layer 100 covering at least a part of the isolation structure 110 , and at least a part of the inhibiting units 210 being spaced apart from one another; a first common electrode 300 located on the side of the pixel definition layer 100 facing away from the substrate 101 , a second orthographic projection of the first common electrode 300 on the pixel definition layer 100 covering at least a part of an area other than the
  • the light-transmitting display module includes the pixel definition layer 100 , the nucleation inhibiting layer 200 and the first common electrode 300 .
  • the first orthographic projections of the plurality of inhibiting units 210 of the nucleation inhibiting layer 200 on the pixel definition layer 100 covers at least a part of the isolation structure 110 .
  • the second orthographic projection of the first common electrode 300 on the pixel definition layer 100 covers at least a part of the area other than the first orthographic projection.
  • the inhibiting unit 210 is disposed on at least a part of the isolation structure 110 , so that the first common electrode 300 is not disposed on at least a part of the isolation structure 110 , which can reduce an occupation area of the first common electrode 300 in the light-transmitting display module.
  • the occupation area of the first common electrode 300 is reduced, so that the light transmittance of the light-transmitting display module can be improved.
  • the inhibiting unit 210 is not disposed in the pixel opening 120 , and the first common electrode 300 is disposed in the pixel opening 120 , so that the normal display operation of the light-transmitting display module is not affected. Therefore, in the present application, the light transmittance of the light-transmitting display module can be improved while the normal display operation of the light-transmitting display module is not affected, thus facilitating the under-screen integration of the photosensitive component on a side of the light-transmitting display module.
  • the nucleation inhibiting layer 200 of the light-transmitting display module may be in direct contact with the pixel definition layer 100 , or other layer structure may be disposed between the nucleation inhibiting layer 200 and the pixel definition layer 100 .
  • a structure such as a carrier layer is disposed between the nucleation inhibiting layer 200 and the pixel definition layer 100 .
  • the carrier layer refers to a carrier-related film layer for realizing functions such as injection, transport, and blocking of carriers (holes or electrons).
  • the carrier layer may include at least one of a hole inject layer (HIL), a hole transport layer (HTL), an electron blocking layer (EBL), an electron inject layer (EIL), an electron transport layer (ETL), and a hole blocking layer (HBL).
  • HIL hole inject layer
  • HTL hole transport layer
  • EBL electron blocking layer
  • EIL electron inject layer
  • ETL electron transport layer
  • HBL hole blocking layer
  • the first common electrode 300 is located on the side of the pixel definition layer 100 facing away from the substrate 101 .
  • the first common electrode 300 may be in direct contact with the isolation structure of the pixel definition layer 100 , or other layer structure may be disposed between the first common electrode 300 and the pixel definition layer 100 , such as the above-mentioned carrier layer.
  • the first common electrode is disposed on the side of a light-emitting layer facing away from the substrate 101 , and the pixel electrode, the light-emitting layer and the common electrode form a light-emitting device to realize a light-emitting function.
  • the nucleation inhibiting layer 200 is, for example, an optical external coupling coating layer.
  • the nucleation inhibiting layer 200 can be selectively deposited on the isolation structure 110 by means of evaporation (including thermal evaporation and electron beam evaporation), photolithography, printing and the like.
  • a material of the nucleation inhibiting layer 200 includes small molecular organic compounds, polymers, organometallic compounds and/or inorganic compounds and elements.
  • the nucleation inhibiting layer 200 makes certain materials such as magnesium not likely to be deposited on its surface.
  • magnesium is not likely to be deposited on the surface of the nucleation inhibiting layer 200 .
  • the material of the first common electrode 300 includes, for example, magnesium, and the nucleation inhibiting layer 200 is configured to inhibit the first common electrode 300 from being formed on the surface of the nucleation inhibiting layer 200 .
  • the first common electrode 300 is inhibited from being formed on the inhibiting unit 210 , and the first common electrode 300 is not formed on the surface of the inhibiting unit 210 facing away from the isolation structure 110 .
  • the nucleation inhibiting layer 200 is formed on the isolation structure 110 , in the formation of the first common electrode on the pixel definition layer 100 , the first common electrode 300 will not be formed on the inhibiting unit 210 . Therefore, at least a part of the isolation structure 110 is not covered by the first common electrode 300 .
  • the first common electrode 300 includes a body portion 310 and a plurality of hollow portions 320 extending through the body portion 310 and spaced apart from one another.
  • An orthographic projection of the hollow portion 320 in a thickness direction of the light-transmitting display module covers an orthographic projection of at least a part of the isolation structure 110 in the thickness direction, and the inhibiting unit 210 is located in the hollow portion 320 .
  • the plurality of hollow portions 320 are spaced apart from one another, so that the first common electrode 300 can form a contiguous single layer via the body portion 310 between two adjacent hollow portions 320 . Portions of the first common electrode 300 in different pixel openings 120 are connected to one another. Moreover, the first common electrode 300 are provided with the hollow portions 320 , and an inhibiting unit 210 is disposed in each hollow portion 320 , which can reduce the area of the first common electrode 300 and improve the light transmittance of the light-transmitting module.
  • the material of the first common electrode 300 includes magnesium weighted greater than or equal to 95% of the first common electrode 300 .
  • Magnesium constitutes a high proportion of the material of the first common electrode 300 , which can improve the light transmittance of the first common electrode 300 .
  • a thickness of the nucleation inhibiting layer 200 ranges from 10 angstroms to 100 angstroms. When the thickness of the nucleation inhibiting layer 200 is within the above range, it can not only be ensured that the surface of the nucleation inhibiting layer 200 has a sufficiently small adhesion, so that the first common electrode 300 cannot be formed on the surface of the inhibiting units 210 , but also avoid that the nucleus inhibiting layer is too thick and causes the inhibiting units 210 to spread to a non-designated region, so that enlargement of a coverage area of the inhibiting unit 210 is avoided.
  • the size of the inhibiting unit 210 is not limited herein, as long as the inhibiting units 210 are located on the isolation structure 110 and are not located in the pixel opening 120 , and does not affect the formation of the first common electrode 300 in the pixel opening 120 .
  • a minimum width of the inhibiting unit 210 is greater than or equal to 5 ⁇ m.
  • the inhibiting units 210 have large areas, which can improve the light transmittance of the light-transmitting display module.
  • the minimum distance between the inhibiting unit 210 and the pixel opening 120 is greater than or equal to 10 ⁇ m.
  • the minimum distance between the inhibiting unit 210 and the pixel opening 120 is within the above range, which can prevent the inhibiting unit 210 from spreading to the pixel opening 120 , thereby preventing the first common electrode 300 from being unable to be formed in the pixel opening 120 and affecting the display.
  • the display panel according to an embodiment of the present application further includes a second common electrode 500 located in the second display area AA 2 , and the second common electrode 500 includes a magnesium-silver alloy layer.
  • the second common electrode 500 in the second display area AA 2 includes the magnesium-silver alloy layer, and the magnesium-silver alloy layer has a good electrical conductivity, which can alleviate color shift between viewing angles and improve display uniformity of the second display area AA 2 .
  • a weight ratio of magnesium to silver ranges from 1/15 to 1/9.
  • the light-transmitting display module further includes a first pixel group 400 including at least one first sub-pixel 410 and a plurality of second sub-pixels 420 .
  • the first sub-pixel 410 is surrounded by the plurality of second sub-pixels 420 .
  • the inhibiting unit 210 is located around the first sub-pixel 410 , and the inhibiting unit 210 is located between two adjacent second sub-pixels 420 .
  • the inhibiting unit 210 is located around the first sub-pixel 410 , and the inhibiting unit 210 is located between two adjacent second sub-pixels 420 .
  • the inhibiting units 210 are distributed, which can improve the light transmittance of the light-transmitting display module and current flow allowance of the first common electrode 300 .
  • multiple second sub-pixels 420 are evenly distributed around a first sub-pixel 410 .
  • Inhibiting units 210 are uniformly distributed around a first sub-pixel 410 .
  • the display effect can be improved.
  • four second sub-pixels 420 are disposed around one first sub-pixel 410 , and the four second sub-pixels 420 are uniformly distributed around the first sub-pixel 410 .
  • the first sub-pixel 410 is a green sub-pixel
  • the plurality of second sub-pixels 420 include a red sub-pixel and a blue sub-pixel.
  • the light-transmitting display module includes a plurality of first pixel groups 400 disposed in an array along a first direction and a second direction.
  • a first sub-pixel 410 is disposed between two adjacent first pixel groups 400 .
  • a first sub-pixel 410 is disposed between two adjacent first pixel groups 400 .
  • a plurality of the first sub-pixels 410 in the light-transmitting display module are disposed in an array along the first direction and the second direction.
  • the red sub-pixels and the blue sub-pixels are alternately disposed.
  • the display panel includes red sub-pixels, blue sub-pixels and green sub-pixels.
  • the plurality of second sub-pixels 420 are disposed in an array along the first direction and the second direction, that is, the red sub-pixels and the blue sub-pixels are located in same rows and same columns and are arranged in an array along the first direction and the second direction. In a row along the first direction, red sub-pixels and blue sub-pixels are alternately disposed, and in a column along the second direction, red sub-pixels and blue sub-pixels are alternately disposed.
  • the first sub-pixels 410 disposed in sequence along the first direction are located between two adjacent rows of second sub-pixels 420 , that is, the green sub-pixels are located between two adjacent rows of red sub-pixels and blue sub-pixels.
  • the first sub-pixels 410 disposed in sequence along the second direction are located between two adjacent columns of second sub-pixels 420 , that is, the green sub-pixels are located between two adjacent columns of red sub-pixels and blue sub-pixels.
  • an inhibiting unit 210 is disposed between two adjacent second sub-pixels 420 , that is, an inhibiting unit 210 is disposed between adjacent red and blue sub-pixels along the first direction, and an inhibiting unit 210 is disposed between adjacent red and blue sub-pixels along the second direction.
  • the sizes of the first sub-pixels 410 and the second sub-pixels 420 may be set in various ways.
  • the size of the first sub-pixel 410 is smaller than the size of the second sub-pixel 420 .
  • the sizes of the plurality of the second sub-pixels 420 may be the same or different.
  • the light-transmitting display module further includes a first pixel circuit (not shown in the drawings).
  • the first pixel circuit is electrically connected to the first sub-pixels 410 or the second sub-pixels 420 for driving the display operations of the first sub-pixels 410 or the second sub-pixels 420 .
  • Multiple first pixel circuits may be provided and each electrically connected to their corresponding first type sub-pixels 410 and second sub-pixels 420 .
  • a circuit structure of the first pixel circuit is any one of a 2T1C circuit, a 7T1C circuit, a 7T2C circuit, or a 9T1C circuit.
  • 2T1C circuit refers to a pixel circuit including two thin film transistors (T) and one capacitor (C), configurations of other circuits such as “7T1C circuit”, “7T2C circuit” and “9T1C circuit” can be understood similarly.
  • the display panel 100 may further include a second pixel circuit located in the second display area AA 2 and electrically connected to the sub-pixels in the second display area AA 2 for driving display operations of the sub-pixels in the second display area AA 2 .
  • the circuit structure of the second pixel circuit may be any one of the 2T1C circuit, the 7T1C circuit, the 7T2C circuit, or the 9T1C circuit.
  • the light-transmitting display module further includes the substrate 101 and a device layer (not shown in the drawings) located on the substrate 101 .
  • the first pixel circuit is located in the device layer.
  • the pixel definition layer 100 is located on the device layer.
  • the substrate 101 may be made of light-transmitting materials such as glass or polyimide (PI).
  • the device layer may include pixel circuits for driving display operations of sub-pixels.
  • the at least one pixel opening 120 of the pixel definition layer 100 includes a first pixel opening and a second pixel opening.
  • the at least one pixel opening 120 includes a first pixel opening and a second pixel opening located in the first display area AA 1 .
  • the at least one pixel opening 120 further includes a third pixel opening located in the second display area AA 2 .
  • the first sub-pixel 410 includes a first light-emitting structure 412 and a first pixel electrode 411 .
  • the first light-emitting structure 412 is located in the first pixel opening and on the side of the first common electrode 300 facing the substrate 101 .
  • the first pixel electrode 411 is located on the side of the first light-emitting structure 412 facing the substrate 101 .
  • the second sub-pixel 420 includes a second light-emitting structure 422 and a second pixel electrode 421 .
  • the second light-emitting structure 422 is located in the second pixel opening 120 and on the side of the first common electrode 300 facing the substrate 101 .
  • the second pixel electrode 421 is located on the side of the second light-emitting structure 422 facing the substrate 101 .
  • the first light-emitting structure 412 is disposed between the first pixel electrode 411 and the first common electrode 300 .
  • the first pixel electrode 411 and the first common electrode 300 when powered, can drive the first light-emitting structure 412 to emit light.
  • the second light-emitting structure 422 is disposed between the second pixel electrode 421 and the first common electrode 300 .
  • the second pixel electrode 421 and the first common electrode 300 when powered, can drive the second light-emitting structure 422 to emit light.
  • the inhibiting units 210 are located on the isolation structure 110 , and the first common electrode 300 is not disposed on a part of the surface of the isolation structure 110 , so that the light-emitting by the first light-emitting structure 412 and the second light-emitting structure 422 will not be affected.
  • the first light-emitting structure 412 and the second light-emitting structure 422 may each include an OLED light-emitting layer, and depending on the design requirements of the first light-emitting structure 412 and the second light-emitting structure 422 , the first light-emitting structure 412 and the second light-emitting structure 422 may each further include at least one of a hole injection layer, a hole transport layer, an electron injection layer or an electron transport layer.
  • the first pixel electrode 411 and/or the second pixel electrode 421 are light-transmitting electrodes.
  • the first pixel electrode 411 and/or the second pixel electrode 421 include an indium tin oxide (ITO) layer or an indium zinc oxide layer.
  • the first pixel electrode 411 and/or the second pixel electrode 421 are reflective electrodes including a first light-transmitting conductive layer, a reflective layer on the first light-transmitting conductive layer, and a second light-transmitting conductive layer on the reflective layer.
  • the first light-transmitting conductive layer and the second light-transmitting conductive layer may be ITO, indium zinc oxide, etc.
  • the reflective layer may be a metal layer, for example, the reflective layer is made of a silver material.
  • the second pixel electrode 421 may be configured to use the same material as the first pixel electrode 411 .
  • an orthographic projection of the first light-emitting structure 412 on the substrate 101 comprises one first pattern unit or comprises two or more first pattern units joined together, and the first pattern unit includes at least one selected from a group including a circle, an oval, a dumbbell, a gourd and a rectangle.
  • an orthographic projection of the first pixel electrode 411 on the substrate 101 comprises one second pattern unit or comprises two or more second pattern units joined together, and the second pattern unit includes at least one selected from a group including a circle, an oval, a dumbbell, a gourd and a rectangle.
  • an orthographic projection of the second light-emitting structure 422 on the substrate 101 comprises one third pattern unit or comprises two or more third pattern units joined together, and the third pattern unit includes at least one selected from a group including a circle, an oval, a dumbbell, a gourd and a rectangle.
  • an orthographic projection of the second pixel electrode 421 on the substrate 101 comprises one fourth pattern unit or comprises two or more fourth pattern units joined together, and the fourth pattern unit includes at least one selected from a group including a circle, an oval, a dumbbell, a gourd and a rectangle.
  • the light-transmitting display module may further include an encapsulation layer, a polarizer and a cover plate over the encapsulation layer.
  • the cover plate may also be directly disposed over the encapsulation layer without the arrangement of the polarizer, or the cover plate may be directly disposed over the encapsulation layer in at least the first display area AA 1 without the arrangement of the polarizer, so as to avoid the influence of the polarizer on amount of light collected by a photosensitive element correspondingly disposed under the first display area AA 1 .
  • the polarizer may also be disposed over the encapsulation layer in the first display area AA 1 .
  • the embodiments of the present application provide a method for manufacturing a display panel.
  • the display panel includes a first display area AA 1 and a second display area AA 2 .
  • a light transmittance of the first display area AA 1 is greater than that of the second display area AA 2 .
  • the method for manufacturing the display panel includes steps S 501 -S 504 .
  • a pixel definition material layer is formed on a substrate 101 , and the pixel definition material layer is patterned to form a pixel definition layer 100 including an isolation structure 110 and at least one pixel opening 120 encircled by the isolation structure 110 .
  • a mask 600 is disposed on a side of the pixel definition layer 100 facing away from the substrate 101 .
  • the mask 600 includes at least one mask opening 610 .
  • An orthographic projection of the mask opening 610 on the pixel definition layer 100 covers at least a part of the isolation structure 110 .
  • a nucleation inhibiting layer 200 is formed in the first display area AA 1 by using the mask 600 .
  • the nucleation inhibiting layer 200 includes a plurality of inhibiting units 210 .
  • a first orthographic projection of the inhibiting unit 210 on the pixel definition layer 100 covers at least a part of the isolation structure 110 .
  • a first common electrode 300 is formed on the side of the pixel definition layer 100 facing away from the substrate 101 .
  • a second orthographic projection of the first common electrode 300 on the pixel definition layer 100 covers at least a part of an area other than the first orthographic projection.
  • the plurality of inhibiting units 210 of the nucleation inhibiting layer 200 are located on at least a part of the isolation structure 110 , and the first common electrode 300 is located at least a part of the area other than the area where the inhibiting units 210 are located.
  • the inhibiting units 210 are disposed on at least a part of the isolation structure 110 . Therefore, the first common electrode 300 is not disposed on at least a part of the isolation structure 110 .
  • the occupation area of the first common electrode 300 is small, so that the light transmittance of the light-transmitting display module can be improved.
  • the inhibiting unit 210 is not disposed in the pixel opening 120 , and the first common electrode 300 is disposed in the pixel opening 120 , so that the normal display operation of the light-transmitting display module is not affected. Therefore, in the present application, the light transmittance of the light-transmitting display module can be improved while the normal display operation of the light-transmitting display module is not affected, thus facilitating the under-screen integration of the photosensitive component on a side of the light-transmitting display module.
  • the method for manufacturing the display panel further includes: forming a second common electrode 500 on the side of the pixel definition layer 100 facing away from the substrate 101 , the second common electrode 500 being formed in the second display area AA 2 .
  • the second common electrode 500 for example, includes the magnesium-silver alloy layer, which can ensure a desired conductivity of the second common electrode 500 and improve the display effect of the display panel.
  • the method for manufacturing the display panel provided by the present application includes Steps 1-3.
  • the first pixel electrodes 411 and the second pixel electrodes 421 are formed on an array substrate.
  • the array substrate includes, for example, a substrate 101 and a device layer.
  • the pixel definition layer 100 is formed on the first pixel electrodes 411 and the second pixel electrodes 421 .
  • the pixel definition layer 100 includes the isolation structure 110 and the pixel opening 120 encircled by the isolation structure 110 .
  • the light-emitting structures are formed in the pixel opening 120 .
  • the light-emitting structures includes the first light-emitting structures 412 and the second light-emitting structures 422 .
  • the second common electrode 500 is formed on the pixel definition layer 100 .
  • the second common electrode 500 is located in the second display area AA 2 .
  • the pixel definition layer 100 is covered with the mask 600 .
  • the mask 600 includes the mask openings 610 , and the orthographic projection of each mask opening 610 on the pixel definition layer 100 covers at least a part of the isolation structure 110 .
  • the nucleation inhibiting layer 200 is formed in the first display area AA 1 by means of evaporation or printing, etc.
  • the nucleation inhibiting layer 200 includes a plurality of inhibiting units 210 .
  • the inhibiting units 210 are formed on the side of the isolation structure 110 facing away from the substrate 101 through the mask openings 610 .
  • the first common electrode 300 is formed on the side of the pixel definition layer 100 facing away from the substrate 101 .
  • the second orthographic projection of the first common electrode 300 on the pixel definition layer 100 covers at least a part of the area other than the first orthographic projection.
  • step 6 may be performed directly after step 3 to form the nucleation inhibiting layer 200 , and then the same step may be performed to form the first common electrode 300 and the second common electrode 500 .

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Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11832473B2 (en) 2019-06-26 2023-11-28 Oti Lumionics Inc. Optoelectronic device including light transmissive regions, with light diffraction characteristics
KR20220046551A (ko) 2019-06-26 2022-04-14 오티아이 루미오닉스 인크. 광 회절 특성을 갖는 광 투과 영역을 포함하는 광전자 디바이스
CN112054048A (zh) * 2020-09-17 2020-12-08 合肥维信诺科技有限公司 透光显示模组、显示面板及其制备方法
US11985841B2 (en) 2020-12-07 2024-05-14 Oti Lumionics Inc. Patterning a conductive deposited layer using a nucleation inhibiting coating and an underlying metallic coating
CN112928147B (zh) * 2021-02-09 2023-06-06 武汉华星光电半导体显示技术有限公司 显示面板及显示装置
CN113054134B (zh) * 2021-03-09 2022-06-10 武汉华星光电半导体显示技术有限公司 显示面板
CN115377321A (zh) * 2021-03-09 2022-11-22 武汉华星光电半导体显示技术有限公司 显示面板及其制备方法
CN113053978B (zh) 2021-03-12 2022-09-27 武汉华星光电半导体显示技术有限公司 显示面板及显示装置
CN113410268B (zh) * 2021-06-02 2022-09-02 昆山国显光电有限公司 显示面板、显示面板的制造方法及显示装置
CN113629205B (zh) * 2021-07-19 2023-02-10 武汉华星光电半导体显示技术有限公司 显示面板及显示装置
US20240147779A1 (en) * 2021-10-28 2024-05-02 Chengdu Boe Optoelectronics Technology Co., Ltd. Terminal device, display apparatus, and display panel and manufacturing method therefor
CN114695790B (zh) * 2022-03-18 2023-10-10 武汉华星光电半导体显示技术有限公司 Oled显示面板和oled显示装置
CN115132815A (zh) * 2022-07-27 2022-09-30 京东方科技集团股份有限公司 显示基板及显示装置
CN117062489B (zh) * 2023-10-12 2024-01-30 合肥维信诺科技有限公司 显示面板和显示装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102155736B1 (ko) * 2013-09-13 2020-09-15 삼성디스플레이 주식회사 유기 발광 표시장치 및 그 제조방법
KR102582884B1 (ko) * 2016-12-02 2023-09-26 오티아이 루미오닉스 인크. 방출 영역 위에 배치된 전도성 코팅을 포함하는 디바이스 및 이를 위한 방법
CN110785867B (zh) * 2017-04-26 2023-05-02 Oti照明公司 用于图案化表面上覆层的方法和包括图案化覆层的装置
CN112889162A (zh) * 2018-11-23 2021-06-01 Oti照明公司 包括光透射区域的光电装置
CN210575958U (zh) * 2019-08-02 2020-05-19 昆山国显光电有限公司 显示面板及显示装置
CN110783485B (zh) * 2019-09-24 2021-06-18 昆山国显光电有限公司 透光显示面板、显示面板、制作方法、显示装置
CN111463356B (zh) * 2020-04-20 2022-08-09 昆山国显光电有限公司 一种显示面板、显示面板的制备方法和显示装置
CN111584591B (zh) * 2020-05-22 2023-03-28 京东方科技集团股份有限公司 显示面板、驱动方法及显示装置
CN112054048A (zh) * 2020-09-17 2020-12-08 合肥维信诺科技有限公司 透光显示模组、显示面板及其制备方法

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