WO2019138453A1 - 活性ガス生成装置及び成膜処理装置 - Google Patents

活性ガス生成装置及び成膜処理装置 Download PDF

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Publication number
WO2019138453A1
WO2019138453A1 PCT/JP2018/000230 JP2018000230W WO2019138453A1 WO 2019138453 A1 WO2019138453 A1 WO 2019138453A1 JP 2018000230 W JP2018000230 W JP 2018000230W WO 2019138453 A1 WO2019138453 A1 WO 2019138453A1
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Prior art keywords
gas
electrode
active
active gas
holes
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PCT/JP2018/000230
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English (en)
French (fr)
Japanese (ja)
Inventor
真一 西村
謙資 渡辺
廉 有田
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東芝三菱電機産業システム株式会社
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Priority to JP2019565098A priority Critical patent/JP6719856B2/ja
Priority to PCT/JP2018/000230 priority patent/WO2019138453A1/ja
Priority to TW107118295A priority patent/TWI675123B/zh
Publication of WO2019138453A1 publication Critical patent/WO2019138453A1/ja

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/30—Plasma torches using applied electromagnetic fields, e.g. high frequency or microwave energy

Definitions

  • the present invention relates to an active gas generator for generating an active gas obtained by activating a source gas supplied to a discharge space.
  • a disk formed by parallelly arranging a high voltage side electrode structure having a disk-like high voltage dielectric electrode and a ground side electrode structure having a ground dielectric electrode as one of conventional active gas generating devices There is a configuration that uses an electrode group component in the shape of a loop.
  • the source gas that has entered the inside from the outer peripheral portion of the electrode group configuration portion passes through the discharge space (discharge field) to become an active gas (a gas containing radicals), and the obtained active gas is grounded at the lower side. It spouts out from the gas spout hole provided only one in the dielectric electrode.
  • the residence time of the gas in the discharge space be constant for all source gases. The reason is that if the residence time of the source gas in the discharge space is not constant, the flow rate and concentration of the active gas will differ, so the active gas is supplied to the target (substrate to be processed) such as a wafer and the film is made to the target When forming a film, the film formation result of the film may not be constant.
  • a disk-like electrode structure or a cylindrical electrode structure is used to make the residence time of the source gas in the discharge space constant.
  • FIG. 11 is an explanatory view schematically showing a basic configuration of a conventional active gas generator using a disk-like electrode structure.
  • the figure (a) is a figure which shows the outline seen from diagonally downward from the upper part, and the figure (b) is a sectional view showing section structure.
  • FIG. 12 is an explanatory view showing the gas injection hole 9 shown in FIG. 11 and the periphery thereof in an enlarged manner. Note that FIGS. 11 and 12 appropriately show an XYZ orthogonal coordinate system.
  • an electrode group constituting portion consisting of a high voltage side electrode constituting portion 1X and a ground side electrode constituting portion 2X provided below the high voltage side electrode constituting portion 1X has a basic constitution.
  • the high voltage side electrode constituting portion 1X is constituted by a dielectric electrode 11X and a metal electrode 10X which is provided on the upper surface of the dielectric electrode 11X and has a space in the center and which has a flat shape in a plan view.
  • the ground-side electrode configuration portion 2X is provided on the lower surface of the dielectric electrode 21X and the lower surface of the dielectric electrode 21X, and is configured of a toroidal metal electrode 20X having a space at the center.
  • one gas injection hole 9 is provided at the center of the central portion of the dielectric electrode 21X (the area where the metal electrodes 20X and 10X do not overlap in plan view).
  • An alternating voltage is applied to the high voltage side electrode forming portion 1X and the ground side electrode forming portion 2X by a high frequency power supply (not shown).
  • a region where the metal electrodes 10X and 20X overlap in plan view is defined as a discharge space DSX (discharge field) in the dielectric space where the dielectric electrodes 11X and 21X face each other by application of an AC voltage from a high frequency power source.
  • DSX discharge field
  • the discharge space DSX is formed between the high voltage side electrode forming portion 1X and the ground side electrode forming portion 2X by the application of the alternating voltage, and the source gas 6 is formed along the gas flow 8 in the discharge space DSX.
  • an active gas 7 such as nitrogen atomized radically and eject the active gas 7 from the gas injection holes 9 provided at the center of the dielectric electrode 21 X to the lower side (-Z direction). it can.
  • a branch mechanism such as a shower plate is connected to the gas jet hole 9 below the ground side electrode configuration portion 2X, and a branch for jetting an active gas from a plurality of branch jet holes provided in the lower portion of this branch mechanism.
  • An active gas generator with a mechanism is conceivable.
  • the active gas can be ejected directly to the target (the substrate to be treated) without using the branching mechanism, as compared with the above-described active gas generation apparatus with branching mechanism. Also, the active gas can be supplied at a high concentration to the target even when using a material that can shorten the transport distance of the active gas, and can attenuate the active gas when the active gas branches in the branching mechanism. It has the advantage of being able to
  • FIG. 13 is an explanatory view schematically showing a basic configuration of a conventional active gas generator using a cylindrical electrode structure.
  • the figure (a) is a figure which shows side structure
  • the figure (b) is a figure which shows surface structure. Note that FIG. 13 appropriately shows an XYZ orthogonal coordinate system.
  • a high voltage side electrode configuration unit 1Y and a ground side electrode configuration unit 2Y provided inside the high voltage side electrode configuration unit 1Y are basically configured.
  • the ground-side electrode configuration unit 2Y is provided at the center of a circle on the XZ plane of the high-voltage-side electrode configuration unit 1Y, and the outer periphery of the bar-like metal electrode 20Y and metal electrode 20Y having a circular cross-section on the XZ plane It is comprised by the dielectric material electrode 21Y formed and covered.
  • the high voltage side electrode configuration portion 1Y is configured of a hollow cylindrical dielectric electrode 11Y having a space inside and having a circular cross-sectional structure and a metal electrode 10Y formed so as to cover the outer periphery of the dielectric electrode 11Y. Ru.
  • a discharge space DSY is provided in the hollow region provided between the dielectric electrode 11Y and the dielectric electrode 21Y. Further, an alternating voltage is applied to the high voltage side electrode forming portion 1Y and the ground side electrode forming portion 2Y by a high frequency power supply (not shown).
  • the space between the inner peripheral region of metal electrode 10Y and the outer peripheral region of metal electrode 20Y is a discharge space DSY in the dielectric space where dielectric electrodes 11Y and 21Y are opposed by the application of an alternating voltage from a high frequency power supply.
  • discharge space DSY is formed between high voltage side electrode forming portion 1Y and ground side electrode forming portion 2Y by application of alternating voltage, and from one end, the height direction of the cylinder in discharge space DSY
  • an active gas 7 such as radicalized nitrogen atom can be obtained, and the active gas 7 can be ejected from the other end to the outside.
  • the flow of gas 8 in the discharge space can be made constant regardless of the supply direction.
  • Patent Document 2 discloses an atmospheric pressure plasma processing apparatus that generates an active gas by using atmospheric pressure plasma to perform film formation and the like.
  • the conventional gas generator shown in FIGS. 11 and 12 can supply the active gas 7 with a constant gas residence time in the discharge space DSX, film formation is performed because the gas injection hole 9 is one.
  • the range that can be done is not wide.
  • the distance between the gas injection holes 9, 9 between the pair of adjacently arranged active gas generators is at least Since the distance is relatively long for the diameter (radius ⁇ 2) of the electrode group constituting portion, there is a problem that the film formed on the target becomes a waved film, and uniform film formation can not be performed.
  • An object of the present invention is to provide a structure of an active gas generator.
  • An active gas generation apparatus is an active gas generation apparatus that generates an active gas obtained by activating a source gas supplied to a discharge space, comprising: a first electrode component and a first electrode component Between the first and second electrode components by applying an AC voltage to the first and second electrode components, and applying the AC voltage to the first and second electrode components.
  • the discharge space is formed, and the first electrode configuration includes a first dielectric electrode and a first metal electrode formed on the top surface of the first dielectric electrode;
  • the second electrode component has a second dielectric electrode and a second metal electrode formed on the lower surface of the second dielectric electrode, and the application of the alternating voltage causes the first and second electrode components to be formed.
  • Each of the gas ejection holes has at least two gas supply holes adjacent to each other in plan view among the plurality of gas supply holes, and the corresponding one of the plurality of gas ejection holes from each of the at least two gas supply holes.
  • Moth At least two distances lead to ejection hole is a second arrangement relationship having the same distance all, characterized in that it is arranged to satisfy.
  • the plurality of gas supply holes and the plurality of gas injection holes satisfy both the first and second disposition relationships, and the active gas is externally output from the plurality of gas injection holes.
  • the active gas generation apparatus supplies active gas from a plurality of gas injection holes with uniform concentration and flow rate to targets with large formation area to be supplied with active gas. It is possible to perform a film forming process to form a uniform film on the target.
  • FIG. 2 is an explanatory view schematically showing a configuration of an active gas generator of Embodiment 1.
  • FIG. 2 is an explanatory view schematically showing a planar structure of the active gas generator of Embodiment 1.
  • FIG. 2 is an explanatory view schematically showing details of a configuration of an active gas generator of Embodiment 1.
  • FIG. 2 is an explanatory view showing the details of the planar structure of the active gas generator of Embodiment 1.
  • FIG. 2 is an explanatory view showing details of an electrode structure of an active gas generator of Embodiment 1.
  • FIG. 2 is an explanatory view schematically showing a cross-sectional structure in a film formation processing apparatus realized by using the active gas generation apparatus of the first embodiment.
  • FIG. 8 is an explanatory view schematically showing a planar structure of an active gas generation device of a second embodiment.
  • FIG. 10 is an explanatory view showing the details of the planar structure of the active gas generator of Embodiment 2.
  • FIG. 13 is an explanatory view schematically showing a planar structure of an active gas generator of Embodiment 3.
  • FIG. 13 is an explanatory drawing showing the details of the planar structure of the active gas generator of Embodiment 3.
  • FIG. 14 is an explanatory view schematically showing an improved configuration of a conventional active gas generating device adopting the disk-like electrode structure shown in FIGS.
  • a basic configuration is an electrode group configuration portion including a high voltage side electrode configuration portion 1Z and a ground side electrode configuration portion 2Z provided below the high voltage side electrode configuration portion 1Z.
  • the metal electrodes of the high voltage side electrode constituting portion 1Z and the ground side electrode constituting portion 2Z are not shown, and the structure of the dielectric electrode is shown as a representative.
  • the improved configuration is characterized in that a plurality of gas injection holes 9 are provided in (the dielectric electrode of) the ground side electrode configuration portion 2Z.
  • the active gas ejected from the plurality of gas ejection holes may be abbreviated as “the plurality of active gases”.
  • the high voltage side electrode configuration portion 1Z is provided with a plurality of gas supply holes corresponding to the plurality of gas injection holes 9, A modified and improved arrangement for supplying 6 is conceivable.
  • the source gas supplied from the plurality of gas supply holes may be abbreviated as “the plurality of source gases”.
  • the passage time for each of the source gases supplied from the plurality of gas supply holes to pass through the discharge space formed between the high voltage side electrode forming portion 1Z and the ground side electrode forming portion 2Z is Due to the influence of the arrangement of gas supply holes and gas injection holes, the possibility of non-uniformity is very high.
  • the improved configuration shown in FIG. 14 and the above-described modified improved configuration have the problem that the plurality of active gases 7 can not be supplied to the target with uniform concentration and flow rate.
  • FIG. 1 is an explanatory view schematically showing the structure of an active gas generator according to Embodiment 1 in which a disk-like electrode structure is adopted.
  • FIG. 2 is an explanatory view schematically showing a planar structure of the active gas generator of the first embodiment.
  • FIG. 3 is an explanatory view schematically showing details of the configuration of the active gas generator of the first embodiment.
  • FIG. 4 is an explanatory view showing the details of the planar structure of the active gas generator of the first embodiment.
  • FIG. 5 is an explanatory view showing the details of the electrode structure of the active gas generator of the first embodiment. 5 corresponds to, for example, a cross section taken along the line BB in FIG.
  • FIG. 1 to FIG. 3 the metal electrodes of the high voltage side electrode forming portion 1 and the ground side electrode forming portion 2 are not shown, and the structure of the dielectric electrode is shown as a representative. Further, FIGS. 1 to 5 respectively show an XYZ orthogonal coordinate system.
  • the active gas generation device includes a high voltage side electrode forming unit 1 which is a first electrode forming unit, and a ground side provided below the high voltage side electrode forming unit 1.
  • An electrode group configuration unit 100 (see FIG. 6) including the electrode configuration unit 2 (second electrode configuration unit) is a basic configuration.
  • the high voltage side electrode constituting portion 1 includes a dielectric electrode 11 which is a first dielectric electrode, and a disk-like metal electrode 10 in plan view which is provided on the upper surface of the dielectric electrode 11 and has a plurality of gaps 18 discretely.
  • the metal electrode 10 is a first metal electrode (see FIGS. 4 and 5).
  • the ground-side electrode configuration portion 2 is provided on the lower surface of the dielectric electrode 21 which is the second dielectric electrode and the dielectric electrode 21, and is a flat surface having a plurality of gaps 28 separately like the metal electrode 10. It is comprised by the visual disk shaped metal electrode 20 (refer FIG. 4, FIG. 5), and the metal electrode 20 turns into a 2nd metal electrode.
  • the plurality of gaps 18 in the metal electrode 10 and the plurality of gaps 28 in the metal electrode 20 are provided so as to completely match in plan view.
  • a plurality of gas supply holes 19 are provided discretely in a region where metal electrodes 10 and 20 do not overlap in plan view, and in dielectric electrode 21, metal electrodes 20 and 10 in plan view.
  • a plurality of gas supply holes 29 are provided discretely in a region where the two do not overlap.
  • the plurality of gas supply holes 19 are provided to guide the source gas 6 to a discharge space DS described later, and the plurality of gas injection holes 29 are provided to eject the active gas 7 to the outside.
  • the plurality of gas supply holes 19 are arranged at equal intervals along the X direction and the Y direction, and the plurality of gas ejection holes 29 are also arranged at equal intervals along the X direction and the Y direction.
  • the gas supply holes 19 and the plurality of gas injection holes 29 are disposed without overlapping each other in plan view, and are alternately arranged at equal intervals along the X direction and the Y direction. Further, the gas supply holes 19 are always positioned at the outermost positions in the X and Y directions.
  • the plurality of gaps 18 in the metal electrode 10 correspond to the gas supply holes 19 or the gas injection holes 29 in plan view respectively, and the plurality of gaps 28 in the metal electrode 20 are respectively the gas supply holes 19 or gas It is provided so as to be in plan view with the ejection hole 29.
  • Each of the plurality of gas supply holes 19 has a first circular hole diameter (diameter) in plan view, and each of the plurality of gas ejection holes 29 has a second circular hole diameter in plan view, and the first hole diameter The second hole diameter is set to be the same.
  • the plurality of gas supply holes 19 and the plurality of gas injection holes 29 satisfy the following first and second positional relationships.
  • the plurality of gas supply holes 19 and the plurality of gas injection holes 29 are arranged without overlapping each other in plan view, and are formed of the plurality of gas supply holes 19 and plurality of gas injection holes 29 in plan view.
  • a discharge space DS is provided in a region where none of them is formed.
  • Each of the plurality of gas injection holes 29 has four (at least two) gas supply holes 19 adjacent to each other in plan view among the plurality of gas supply holes 19 and four adjacent gas
  • the four distances from each of the supply holes 19 to the corresponding gas injection hole 29 among the plurality of gas injection holes 29 are all the same distance D1 (see FIG. 2).
  • An alternating voltage is applied to the high voltage side electrode forming unit 1 and the ground side electrode forming unit 2 by a high frequency power supply (not shown).
  • a region where the metal electrodes 10 and 20 overlap in plan view is a discharge space DS in the dielectric space where the dielectric electrodes 11 and 21 face each other. It is defined as (discharge site).
  • side spacers 30 are provided along the circumferential direction at the outer peripheral portions of the high voltage side electrode configuration 1 (dielectric electrode 11) and the ground side electrode configuration 2 (dielectric electrode 21).
  • the side surface spacer 30 is formed to form a side surface of a cylinder having the high voltage side electrode forming portion 1 as the upper surface and the ground side electrode forming portion 2 as the bottom surface.
  • the side spacer 30 is shown below the actual formation position (in the ⁇ Z direction) in order to make the ground side electrode configuration part 2 visually recognizable.
  • each internal spacer 33 is circular in plan view. It has a third diameter smaller than the first and second hole diameters of the gas injection holes 29.
  • the side surface spacer 30 can reliably prevent the gas flowing in from the circumferential side which is the outer peripheral portion of the high voltage side electrode forming portion 1 and the ground side electrode forming portion 2 by the side surface spacer 30.
  • a plurality of discharge spaces DS are discretely formed between the high voltage side electrode forming portion 1 and the ground side electrode forming portion 2.
  • the active gas generator of the first embodiment when the source gas 6 is supplied from the plurality of gas supply holes 19, the plurality of source gases 6 flows in the plurality of discharge spaces DS by the application of the alternating voltage. When it passes along, the active gas 7 such as nitrogen atom radicalized in each discharge space DS is obtained. Then, the active gas 7 can be ejected from the plurality of gas ejection holes 29 provided in the dielectric electrode 21 to the lower side ( ⁇ Z direction).
  • FIG. 6 is an explanatory view schematically showing a cross-sectional structure in a film formation processing apparatus realized by using the active gas generation apparatus of the first embodiment. 6 schematically shows between the high voltage side electrode forming portion 1 and the ground side electrode forming portion 2 of the cross section AA of FIG. Further, in FIG. 6, the metal electrode 10 and the metal electrode 20 in the high voltage side electrode forming portion 1 and the ground side electrode forming portion 2 are not shown, and the structure of the dielectric electrode is representatively shown. I am trying.
  • the film formation processing chamber 63 places and accommodates the wafer 64 which is the target substrate to be processed on the bottom surface, and functions as a substrate accommodation unit for accommodating the wafer 64 in the treatment space SP33.
  • An electrode group constituting unit 100 including the high voltage side electrode constituting unit 1 and the ground side electrode constituting unit 2 is a main part of the active gas generating device of the first embodiment, and is disposed above the film forming processing chamber 63.
  • the electrode group configuration unit 100 obtains the plurality of active gases 7 from the plurality of source gases 6 using the discharge phenomenon in each of the plurality of discharge spaces DS, and the ground-side electrode configuration unit 2 (dielectric electrode 21 of)
  • the active gas 7 is ejected from the plurality of gas injection holes 29 discretely formed toward the wafer 64 disposed in the processing space SP 33 of the film forming processing chamber 63.
  • the film formation processing chamber 63 in the film formation processing apparatus shown in FIG. 6 is arranged to directly receive the active gas 7 ejected from the plurality of gas injection holes 29 of the active gas generation apparatus of the first embodiment. It is characterized by being
  • the film formation processing apparatus shown in FIG. 6 is disposed below the ground side electrode forming section 2 of the electrode group forming section 100 in the active gas generation apparatus of the first embodiment, and the wafer 64 (processing target substrate) inside And a film formation processing chamber 63 for performing film formation with a plurality of active gases 7.
  • the wafer 64 in the processing space SP 33 of the film forming process chamber 63 can directly receive the active gas 7 ejected from the plurality of gas injection holes 29.
  • a film forming process for forming a film on the surface of the wafer 64 can be performed using the plurality of active gases 7 directly received from the active gas generator (electrode group configuration unit 100) of the first embodiment.
  • the plurality of gas supply holes 19 and the plurality of gas injection holes 29 satisfy the first and second positional relationships, and the activation gas 7 is externally output from the plurality of gas injection holes 29. You can spout.
  • each of the wafers 64 which are large targets receiving the plurality of active gases 7 can be obtained.
  • a plurality of active gases 7 of uniform flow rate and concentration can be ejected, and as a result, a film forming process can be performed to form a uniform film on the surface of the wafer 64.
  • the number of gas supply holes 19 adjacent to each of the plurality of gas injection holes 29 is “4”.
  • target gas ejection hole 29 Focusing on any one gas ejection hole 29 among the plurality of gas ejection holes 29 (hereinafter abbreviated as “target gas ejection hole 29”), four gas supply holes adjacent to the target gas ejection hole 29 in plan view 19 are present, and all four distances from the adjacent four gas supply holes 19 to the target gas injection hole 29 become the same distance D1 (see FIG. 2).
  • the horizontal distance (X direction or Y direction) of the four raw material gases 6 supplied from the four gas supply holes 19 adjacent to the target gas injection hole 29 is It has a constant-condition discharge space passing effect in which it passes through the discharge space DS at a distance D1 and is jetted outside (downward) from the target gas jet hole 29 as one active gas 7.
  • the target gas injection holes 29 have the above-mentioned constant-condition discharge space passage effect for each of the source gases 6 supplied from the four gas supply holes 19.
  • the plurality of internal spacers 33 are disposed at positions where the X direction and the Y direction of the plurality of gas supply holes 19 and the plurality of gas injection holes 29 do not coincide. Does not affect the above-mentioned constant-condition discharge space passage effect.
  • the active gas generation device satisfies the first and second arrangement relationships, and the plurality of gas injection holes 29 all have the above-described constant-condition discharge effect passing effect, so that a plurality of raw materials are produced.
  • the gas 6 passes through the discharge space DS under the same conditions (the same distance and the same time)
  • a plurality of active gases 7 having the same concentration and concentration are obtained, and the plurality of active gases 7 The gas is jetted from the gas jet holes 29.
  • the active gas generating apparatus performs the film forming process for forming a uniform film on the surface of the wafer 64 having a wide area similar to the bottom surface of the film forming process chamber 63. It has the effect of being able to
  • a film formation processing chamber 63 can be added immediately below the active gas generation device of the first embodiment to constitute a film formation processing device. That is, the active gas generation device itself has the discharge space DS for generating dielectric barrier discharge, and the plurality of gas injection holes 29 provided in the dielectric electrode 21 of the ground side electrode configuration part 2 directly connected to the discharge space DS. Also serves as a gas ejection nozzle function for ejecting the plurality of active gases 7 to the lower film formation processing chamber 63.
  • the active gas generation device of the first embodiment has the gas injection nozzle function in the film formation processing apparatus shown in FIG. 6, the active gas 7 generated in the plurality of gas injection holes 29 is very short. Even if it is the active gas 7 that can be supplied to the target (substrate to be processed) wafer 64 in a short time of less than a second and the life generated by the discharge is very short, the attenuation is minimized, The film formation rate at the time of film formation on the wafer 64 can be improved.
  • FIG. 7 is an explanatory view schematically showing a planar structure of the active gas generator of the second embodiment.
  • FIG. 8 is an explanatory view showing the details of the planar structure of the active gas generator of the second embodiment.
  • the metal electrodes of the high voltage side electrode constituting portion 1B and the ground side electrode constituting portion 2B are not shown, and the structure of the dielectric electrode is shown as a representative. 7 and 8 show an XYZ orthogonal coordinate system, respectively.
  • a high voltage side electrode configuration portion 1B which is a first electrode configuration portion
  • a ground side electrode configuration portion 2B provided below the high voltage side electrode configuration portion 1B (a second electrode configuration portion And the electrode group constituent part which consists of.
  • the high voltage side electrode constituting portion 1B is provided on the top surface of the dielectric electrode 11B which is a first dielectric electrode and the dielectric electrode 11B, and has a disc-like metal electrode 10B in plan view having a plurality of discrete spaces. And the metal electrode 10B is the first metal electrode.
  • the ground-side electrode configuration portion 2B is provided on the lower surface of the dielectric electrode 21B, which is the second dielectric electrode, and the lower surface of the dielectric electrode 21B, and has a plurality of gaps separated as in the metal electrode 10B. It is comprised by the disk shaped metal electrode 20B, and the metal electrode 20 turns into a 2nd metal electrode.
  • the plurality of gaps in the metal electrode 10B and the plurality of gaps in the metal electrode 20B are provided so as to completely match in plan view.
  • a plurality of gas supply holes 19B are provided discretely in a region where metal electrodes 10B and 20B do not overlap in plan view, and in dielectric electrode 21B, metal electrodes 20B and 10B in plan view.
  • a plurality of gas injection holes 29B are provided discretely in a region where the two do not overlap.
  • the plurality of gas supply holes 19B are provided to guide the source gas 6 to the discharge space DS, and the plurality of gas injection holes 29B are provided to eject the plurality of active gases 7 to the outside.
  • the plurality of gas supply holes 19B are disposed at equal intervals along the X direction and the Y direction, and the plurality of gas ejection holes 29B are also disposed at equal intervals along the X direction and the Y direction.
  • the gas supply holes 19B and the plurality of gas injection holes 29B are disposed without overlapping with each other in plan view.
  • the gas supply holes 19B are always positioned at the outermost positions in the X and Y directions.
  • the plurality of gaps in the metal electrode 10B correspond to the gas supply holes 19B or the gas injection holes 29B in plan view, and the plurality of gaps in the metal electrode 20B. Are provided in plan view in agreement with the gas supply holes 19B or the gas injection holes 29B, respectively.
  • Each of the plurality of gas supply holes 19B has a first circular hole diameter in plan view
  • each of the plurality of gas injection holes 29B has a second circular hole diameter in plan view, and has a first hole diameter and a second hole diameter.
  • the pore size is set identical.
  • the plurality of gas supply holes 19B and the plurality of gas injection holes 29B satisfy the following first and second positional relationships, as in the first embodiment.
  • the plurality of gas supply holes 19B and the plurality of gas injection holes 29B are arranged without overlapping with each other in plan view, and the plurality of gas supply holes 19B and the plurality of gas injection holes 29B in plan view A discharge space DS is provided in a region where none of them is formed.
  • Each of the plurality of gas injection holes 29B has three (at least two) gas supply holes 19B adjacent to each other in plan view among the plurality of gas supply holes 19B, and three adjacent gas All three distances from the supply holes 19B to the corresponding gas injection holes 29B among the plurality of gas injection holes 29B are the same distance D2 (see FIG. 7).
  • the three adjacent gas supply holes 19B are arranged in an equilateral triangle so as to have an interval of 120 ° around the corresponding gas ejection holes 29B.
  • An alternating voltage is applied to the high voltage side electrode forming portion 1B and the ground side electrode forming portion 2B by a high frequency power supply (not shown).
  • each internal spacer 33B is circular in plan view. It has a third diameter smaller than the first and second hole diameters of the gas injection holes 29B.
  • deposition processing apparatus can be configured by disposing the deposition processing chamber 63 downward, having the side surface spacer 30, etc. Basically, it is the same as the active gas generator of the first embodiment shown in FIGS. 1 to 6, and therefore the description is appropriately omitted.
  • the active gas generator when the plurality of source gases 6 are supplied from the plurality of gas supply holes 19B, the active gas generator according to the second embodiment applies the AC voltage to the plurality of source gases.
  • the active gas 7 such as nitrogen atom which is radicalized in each discharge space. Then, the active gas 7 can be ejected from the plurality of gas ejection holes 29B provided in the dielectric electrode 21B downward (in the -Z direction).
  • the plurality of gas supply holes 19B and the plurality of gas injection holes 29B satisfy the first and second positional relationships, and the activation gas 7 is externally output from the plurality of gas injection holes 29. You can spout.
  • the active gas generation device has a uniform flow rate for each target such as a large area wafer 64 (see FIG. 6) receiving the plurality of active gases 7. And a plurality of active gases 7 having a concentration can be supplied, and as a result, a film forming process can be performed to form a uniform film on the surface of the target.
  • the number of gas supply holes 19B adjacent to one gas injection hole 29B is “3”.
  • the active gas generation device of the second embodiment has a gas jet nozzle function as in the first embodiment, the active gas 7 jetted from the plurality of gas jet holes 29B has a very short millisecond or less. Even if the active gas 7 which can be supplied to the target such as the wafer 64 in a short time and has a very short life of the discharge-generated active gas 7, the attenuation is minimized to form the film at the target portion. The deposition rate can be improved.
  • FIG. 9 is an explanatory view schematically showing a planar structure of the active gas generator of the third embodiment.
  • FIG. 10 is an explanatory view showing the details of the planar structure of the active gas generator of the third embodiment.
  • the metal electrodes of the high voltage side electrode constituting portion 1C and the ground side electrode constituting portion 2C are not shown, and the structure of the dielectric electrode is shown as a representative. Further, an XYZ orthogonal coordinate system is shown in FIGS. 9 and 10, respectively.
  • a high voltage side electrode configuration portion 1C which is a first electrode configuration portion
  • a ground side electrode configuration portion 2C provided below the high voltage side electrode configuration portion 1C (a second electrode configuration portion
  • the electrode group constituent part which consists of.
  • the high voltage side electrode constituting portion 1C includes a dielectric electrode 11C which is a first dielectric electrode, and a disk-like metal electrode 10C which is provided on the upper surface of the dielectric electrode 11C and has a plurality of discrete spaces.
  • the metal electrode 10C is the first metal electrode.
  • the ground-side electrode configuration portion 2C is provided on the lower surface of the dielectric electrode 21C, which is the second dielectric electrode, and on the lower surface of the dielectric electrode 21C, and has a plurality of gaps separated as in the metal electrode 10C. It is comprised by the disk shaped metal electrode 20C, and the metal electrode 20C becomes a 2nd metal electrode.
  • the plurality of gaps in the metal electrode 10C and the plurality of gaps in the metal electrode 20C are provided so as to completely match in plan view.
  • a plurality of gas supply holes 19C are provided discretely in a region where metal electrodes 10C and 20C do not overlap in plan view, and in dielectric electrode 21C, metal electrodes 20C and 10B in plan view
  • a plurality of gas injection holes 29C are provided discretely in a region where the two do not overlap.
  • the plurality of gas supply holes 19C are provided to guide the plurality of source gases 6 to the discharge space DS, and the plurality of gas injection holes 29C are provided to eject the plurality of active gases 7 to the outside.
  • the plurality of gas supply holes 19C are arranged at equal intervals along the X direction and the Y direction, and the plurality of gas ejection holes 29C are also arranged at equal intervals along the X direction and the Y direction.
  • the gas supply holes 19C and the plurality of gas injection holes 29C are arranged without overlapping with each other in plan view, and are alternately arranged at equal intervals along the X direction and the Y direction. Further, the gas supply holes 19C are always positioned at the outermost positions in the X direction and the Y direction.
  • the plurality of gaps in the metal electrode 10C respectively coincide in plan view with the gas supply holes 19C or the gas injection holes 29C, and a plurality of gaps in the metal electrode 20C. Are respectively provided in plan view in agreement with the gas supply holes 19C or the gas injection holes 29C.
  • the plurality of gas supply holes 19C each have a first circular hole diameter in plan view
  • the plurality of gas injection holes 29C each have a second circular hole diameter in plan view, and the second hole diameter is larger than the first hole diameter. It is characterized in that the hole diameter is set small.
  • the plurality of gas supply holes 19C and the plurality of gas injection holes 29C satisfy the following first and second positional relationships.
  • the plurality of gas supply holes 19C and the plurality of gas injection holes 29C are arranged without overlapping with each other in plan view, and the plurality of gas supply holes 19C and the plurality of gas injection holes 29C in plan view A discharge space DS is provided in a region where none of them is formed.
  • Each of the plurality of gas injection holes 29C has four (at least two) gas supply holes 19C adjacent to each other in plan view among the plurality of gas supply holes 19C, and four adjacent gas
  • the four distances from each of the supply holes 19C to the corresponding gas injection hole 29C among the plurality of gas injection holes 29C are all the same distance D3 (see FIG. 9).
  • An alternating voltage is applied to the high voltage side electrode forming unit 1C and the ground side electrode forming unit 2C by a high frequency power supply (not shown).
  • each internal spacer 33C is circular in plan view. It has a third diameter smaller than the first hole diameter and about the same as the second hole diameter of the gas injection holes 29B.
  • the cross-sectional structure of the active gas generator, the film formation processing chamber 63 can be disposed downward as shown in FIG. 6, and the side wall spacer 30 can be configured.
  • the other configuration including the possessing and the like is basically the same as that of the active gas generator of the embodiment 1 shown in FIGS. 1 to 6, and hence the description is appropriately omitted.
  • the active gas generation device of the third embodiment as in the first embodiment, when the source gas 6 is supplied from the plurality of gas supply holes 19C, the plurality of source gases 6 are supplied by the application of alternating voltage. When passing through a plurality of discharge spaces, an active gas 7 such as nitrogen atom radicalized in each discharge space is obtained. Then, the active gas 7 can be jetted from the plurality of gas jetting holes 29C provided in the dielectric electrode 21C to the outside in the lower direction ( ⁇ Z direction).
  • the plurality of gas supply holes 19C and the plurality of gas injection holes 29C satisfy the first and second positional relationships, and the activation gas 7 is externally output from the plurality of gas injection holes 29. You can spout.
  • the active gas generation device has a uniform flow rate for each target such as a large area wafer 64 (see FIG. 6) receiving the plurality of active gases 7. And a plurality of active gases 7 can be supplied, and as a result, a film forming process can be performed to form a uniform film on the surface of the target.
  • the number of gas supply holes 19C adjacent to one gas injection hole 29C is “4”.
  • the active gas generation device of the third embodiment has a gas jet nozzle function as in the first embodiment, the active gas 7 generated by the plurality of gas jet holes 29C is very short and has a short millisecond or less. Even if the active gas 7 which can be supplied to the target such as the wafer 64 in time and has a very short life of the discharge, the attenuation is minimized and the deposition on the target is completed. The film speed can be improved.
  • the second hole diameter of the gas injection holes 29C is made smaller than the first hole diameter of the gas supply holes 19C, and the first and second hole diameters are set to different values. doing.
  • the pressure of the gas supply portion of the source gas 6 and the pressure of the gas ejection portion (the film forming processing chamber 63 etc.) of the active gas 7 are not made dependent.
  • the pressure of the discharge space formed between the high voltage side electrode forming portion 1C and the ground side electrode forming portion 2C can be set to a desired value.
  • the pressure of the gas supply unit is PA
  • the pressure of the discharge space is PB
  • the pressure of the gas injection unit is PC
  • the hole diameter RD of the gas supply hole 19C is RE
  • the hole diameter of the gas injection hole 29C is RE
  • PA ⁇ PC the pressure of the gas injection unit
  • the hole diameter RD of the gas supply hole 19C falls within the pressure between the pressure PA and the pressure PC.
  • the relationship between the hole diameter RD and RE may be set as follows. That is, when it is desired to bring the pressure PB closer to the pressure PA side when PA> PC, this can be realized by increasing the hole diameter RD or decreasing the hole diameter RE.
  • the pressure PB when it is desired to bring the pressure PB close to the PC side, it can be realized by reducing the hole diameter RD or increasing the hole diameter RE. Also in the case of PA ⁇ PC, the pressure PB can be changed by similarly changing the pore sizes RD and RE.
  • the gas contact region which is a region in contact with the active gas, of the high voltage side electrode configuration portion 1 and the ground side electrode configuration portion 2 is formed using quartz or alumina as a component material. Is desirable.
  • the first aspect is a state in which there is little chemical reaction with the gas contact area in contact with the active gas 7; That is, the active gas 7 can be ejected from the plurality of gas supply holes 19 to an external film forming chamber or the like in a state where the deactivation of the active gas 7 is suppressed.
  • the generation of corrosive substances as a by-product accompanying the chemical reaction with the active gas of the active gas generator can be reduced, and as a result, the active gas 7 ejected to the outside can be reduced.
  • the clean active gas 7 which does not contain contamination can be supplied to the outside of the film formation processing chamber 63 or the like, and the effect of improving the film formation quality is produced.
  • the active gas generator for example, a gas containing at least one of nitrogen, oxygen, fluorine, a rare gas and hydrogen is considered.
  • the raw material gases 6 are supplied from the plurality of gas injection holes 29 and become the active gas 7 when passing through the discharge space DS inside, and are made into the plurality of active gases 7 and the plurality of gas injection holes provided in the dielectric electrode 21 From 29 on the outside, for example, it is ejected to the processing space SP 33 (see FIG. 6) of the film forming processing chamber 63. Therefore, film formation processing can be performed on the target wafer 64 by using the reactive gas 7 having high reactivity in the film formation processing chamber 63.
  • the active gas 7 having a higher concentration can be generated from the source gas 6 containing at least one of nitrogen, oxygen, fluorine, a rare gas and hydrogen.
  • the second embodiment not only the film formation of the insulating film for forming the nitride film or oxide film on the target object such as the wafer 64, but also the surface treatment of the target object as resist stripping, etching and cleaning gas. Also available.
  • the second aspect can be used for various film forming processes other than the etching process and the cleaning process of the insulating film by supplying hydrogen gas as the active gas to the surface of the wafer 64.
  • the precursor gas may be employed as the source gas 6 to be supplied in the active gas generating apparatus according to the first to third embodiments.
  • the source gas 6 as a precursor gas (precursor gas)
  • a precursor gas precursor gas
  • the precursor gas that is required for the film and that is the deposition material for film formation can also be supplied to the target to form a film.
  • gas supply holes 19 (19C) adjacent to one gas ejection hole 29 (29C) in a plan view one in the second embodiment.
  • three gas supply holes 19B adjacent to each other in plan view with respect to the gas injection holes 29B are shown, two or more gas supply holes adjacent in plan view to one gas injection hole are two or more. It suffices to satisfy the first and second arrangement relationships.

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  • Organic Chemistry (AREA)
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  • Cleaning Or Drying Semiconductors (AREA)
PCT/JP2018/000230 2018-01-10 2018-01-10 活性ガス生成装置及び成膜処理装置 WO2019138453A1 (ja)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022059904A1 (ko) * 2020-09-17 2022-03-24 주식회사 엘지화학 스파저 및 이를 포함하는 반응기
EP3886540A4 (en) * 2019-11-27 2022-07-06 Toshiba Mitsubishi-Electric Industrial Systems Corporation ACTIVE GAS PRODUCTION DEVICE
JP7220973B1 (ja) * 2021-12-08 2023-02-13 東芝三菱電機産業システム株式会社 活性ガス生成装置
US12017209B2 (en) 2020-09-17 2024-06-25 Lg Chem, Ltd. Sparger and reactor comprising the same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7366513B1 (ja) 2022-09-14 2023-10-23 東芝三菱電機産業システム株式会社 活性ガス生成装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004535041A (ja) * 2001-07-02 2004-11-18 プラズマゾル・コーポレイション 大気圧プラズマ照射装置用の新規な電極及びその使用方法
JP2007141582A (ja) * 2005-11-16 2007-06-07 Uinzu:Kk 放電プラズマ処理装置
JP2011154973A (ja) * 2010-01-28 2011-08-11 Mitsubishi Electric Corp プラズマ処理装置及びプラズマ処理方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2008123142A1 (ja) * 2007-03-27 2010-07-15 積水化学工業株式会社 プラズマ処理装置
JP2009199740A (ja) * 2008-02-19 2009-09-03 Sekisui Chem Co Ltd プラズマ処理装置
KR101913978B1 (ko) * 2014-07-25 2018-10-31 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 라디칼 가스 발생 시스템
WO2016067380A1 (ja) * 2014-10-29 2016-05-06 東芝三菱電機産業システム株式会社 放電発生器とその電源装置
EP3214204A4 (en) * 2014-10-29 2018-06-13 Toshiba Mitsubishi-Electric Industrial Systems Corporation Gas jetting device
WO2017119074A1 (ja) * 2016-01-06 2017-07-13 東芝三菱電機産業システム株式会社 ガス供給装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004535041A (ja) * 2001-07-02 2004-11-18 プラズマゾル・コーポレイション 大気圧プラズマ照射装置用の新規な電極及びその使用方法
JP2007141582A (ja) * 2005-11-16 2007-06-07 Uinzu:Kk 放電プラズマ処理装置
JP2011154973A (ja) * 2010-01-28 2011-08-11 Mitsubishi Electric Corp プラズマ処理装置及びプラズマ処理方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3886540A4 (en) * 2019-11-27 2022-07-06 Toshiba Mitsubishi-Electric Industrial Systems Corporation ACTIVE GAS PRODUCTION DEVICE
WO2022059904A1 (ko) * 2020-09-17 2022-03-24 주식회사 엘지화학 스파저 및 이를 포함하는 반응기
US12017209B2 (en) 2020-09-17 2024-06-25 Lg Chem, Ltd. Sparger and reactor comprising the same
JP7220973B1 (ja) * 2021-12-08 2023-02-13 東芝三菱電機産業システム株式会社 活性ガス生成装置

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