JP6719856B2 - 活性ガス生成装置及び成膜処理装置 - Google Patents
活性ガス生成装置及び成膜処理装置 Download PDFInfo
- Publication number
- JP6719856B2 JP6719856B2 JP2019565098A JP2019565098A JP6719856B2 JP 6719856 B2 JP6719856 B2 JP 6719856B2 JP 2019565098 A JP2019565098 A JP 2019565098A JP 2019565098 A JP2019565098 A JP 2019565098A JP 6719856 B2 JP6719856 B2 JP 6719856B2
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- Prior art keywords
- gas
- electrode
- active
- active gas
- holes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 230000015572 biosynthetic process Effects 0.000 title claims description 26
- 239000007789 gas Substances 0.000 claims description 477
- 239000000470 constituent Substances 0.000 claims description 75
- 239000002184 metal Substances 0.000 claims description 62
- 239000002994 raw material Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 239000002243 precursor Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 3
- 230000003213 activating effect Effects 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000010408 film Substances 0.000 description 66
- 235000012431 wafers Nutrition 0.000 description 21
- 125000006850 spacer group Chemical group 0.000 description 19
- 239000008186 active pharmaceutical agent Substances 0.000 description 17
- 238000010586 diagram Methods 0.000 description 17
- 238000000034 method Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 11
- 230000000694 effects Effects 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 5
- 125000004433 nitrogen atom Chemical group N* 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 230000004308 accommodation Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/30—Plasma torches using applied electromagnetic fields, e.g. high frequency or microwave energy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2018/000230 WO2019138453A1 (ja) | 2018-01-10 | 2018-01-10 | 活性ガス生成装置及び成膜処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2019138453A1 JPWO2019138453A1 (ja) | 2020-04-02 |
| JP6719856B2 true JP6719856B2 (ja) | 2020-07-08 |
Family
ID=67219446
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019565098A Active JP6719856B2 (ja) | 2018-01-10 | 2018-01-10 | 活性ガス生成装置及び成膜処理装置 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6719856B2 (zh) |
| TW (1) | TWI675123B (zh) |
| WO (1) | WO2019138453A1 (zh) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20230108322A (ko) | 2021-12-08 | 2023-07-18 | 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 | 활성 가스 생성 장치 |
| WO2024057424A1 (ja) | 2022-09-14 | 2024-03-21 | 東芝三菱電機産業システム株式会社 | 活性ガス生成装置 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3886540B1 (en) * | 2019-11-27 | 2023-05-03 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Active gas generation device |
| KR102690910B1 (ko) | 2020-09-17 | 2024-08-02 | 주식회사 엘지화학 | 스파저 및 이를 포함하는 반응기 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2452939A1 (en) * | 2001-07-02 | 2003-01-16 | Seth Tropper | A novel electrode for use with atmospheric pressure plasma emitter apparatus and method for using the same |
| JP2007141582A (ja) * | 2005-11-16 | 2007-06-07 | Uinzu:Kk | 放電プラズマ処理装置 |
| CN101658076A (zh) * | 2007-03-27 | 2010-02-24 | 积水化学工业株式会社 | 等离子处理装置 |
| JP2009199740A (ja) * | 2008-02-19 | 2009-09-03 | Sekisui Chem Co Ltd | プラズマ処理装置 |
| JP5328685B2 (ja) * | 2010-01-28 | 2013-10-30 | 三菱電機株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| EP3193566B1 (en) * | 2014-07-25 | 2018-12-05 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Radical gas generation system |
| JP6321200B2 (ja) * | 2014-10-29 | 2018-05-09 | 東芝三菱電機産業システム株式会社 | ガス噴射装置 |
| CN107079575B (zh) * | 2014-10-29 | 2020-08-04 | 东芝三菱电机产业系统株式会社 | 放电发生装置 |
| EP3401949B1 (en) * | 2016-01-06 | 2021-03-24 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Gas supply device |
-
2018
- 2018-01-10 JP JP2019565098A patent/JP6719856B2/ja active Active
- 2018-01-10 WO PCT/JP2018/000230 patent/WO2019138453A1/ja active Application Filing
- 2018-05-29 TW TW107118295A patent/TWI675123B/zh active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20230108322A (ko) | 2021-12-08 | 2023-07-18 | 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 | 활성 가스 생성 장치 |
| WO2024057424A1 (ja) | 2022-09-14 | 2024-03-21 | 東芝三菱電機産業システム株式会社 | 活性ガス生成装置 |
| KR20240048546A (ko) | 2022-09-14 | 2024-04-15 | 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 | 활성 가스 생성 장치 |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI675123B (zh) | 2019-10-21 |
| TW201930644A (zh) | 2019-08-01 |
| JPWO2019138453A1 (ja) | 2020-04-02 |
| WO2019138453A1 (ja) | 2019-07-18 |
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