WO2019134268A1 - Substrat, procédé de formation d'une structure d'encapsulation à l'aide d'un substrat, et structure d'encapsulation - Google Patents

Substrat, procédé de formation d'une structure d'encapsulation à l'aide d'un substrat, et structure d'encapsulation Download PDF

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Publication number
WO2019134268A1
WO2019134268A1 PCT/CN2018/080876 CN2018080876W WO2019134268A1 WO 2019134268 A1 WO2019134268 A1 WO 2019134268A1 CN 2018080876 W CN2018080876 W CN 2018080876W WO 2019134268 A1 WO2019134268 A1 WO 2019134268A1
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WIPO (PCT)
Prior art keywords
groove structure
substrate
substrate according
joined
bonding
Prior art date
Application number
PCT/CN2018/080876
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English (en)
Chinese (zh)
Inventor
段银祥
周萌
徐虎
田梓峰
张世忠
许颜正
Original Assignee
深圳市绎立锐光科技开发有限公司
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Publication of WO2019134268A1 publication Critical patent/WO2019134268A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02315—Support members, e.g. bases or carriers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/0232—Lead-frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/02365—Fixing laser chips on mounts by clamping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H01L2924/15155—Shape the die mounting substrate comprising a recess for hosting the device the shape of the recess being other than a cuboid
    • H01L2924/15156—Side view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H01L2924/15155—Shape the die mounting substrate comprising a recess for hosting the device the shape of the recess being other than a cuboid
    • H01L2924/15157—Top view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
    • H01L2924/18165—Exposing the passive side of the semiconductor or solid-state body of a wire bonded chip

Definitions

  • the present invention relates to a substrate, a substrate packaging method, and a package structure, and more particularly to a substrate capable of strictly controlling thickness uniformity of a bonding material and positioning of a bonded member in a device packaging process, a package structure forming method using the substrate, and a package structure.
  • a light source that uses a blue laser diode (LD) to excite a wavelength conversion device has the advantages of high efficiency, high brightness, and the like.
  • the blue LD has a small spot size and a large power, and thus its optical power density is large, the heat dissipation performance of the wavelength conversion device is required to be high.
  • a typical wavelength conversion device having, for example, a "thermally conductive substrate + diffuse reflection layer + luminescent layer” structure cannot meet its heat dissipation requirements.
  • the "thermally conductive substrate + diffuse reflection layer + luminescent layer” structure is more advantageous for heat dissipation.
  • the "thermally conductive substrate + diffuse reflection layer + luminescent layer” structure mainly uses solder to weld metallized luminescent ceramic or glass to a copper substrate.
  • Fig. 1 shows such a wavelength conversion device package structure.
  • the package structure includes a copper substrate 1, a solder paste 2, a wavelength conversion chip 3 composed of a wavelength converting material 32 and a metallization layer 31, and a lens group 4.
  • the excitation light having the wavelength ⁇ 1 is incident to the wavelength conversion material 32 through the lens group 4, so that the wavelength conversion material 32 emits a laser light having a wavelength ⁇ 1 different from the wavelength ⁇ 1.
  • the solder paste 2 is a bonding layer for connecting the wavelength conversion chip 3 as a member to be bonded to the copper substrate 1.
  • the thickness of the solder paste 2 becomes uneven due to the influence of the viscosity, wettability, and soldering process of the solder material.
  • the fluidity and uncontrollability of liquid tin during the reflow soldering process can cause the position of the wavelength conversion chip to drift and/or skew.
  • the offset chip will affect the light collection efficiency of the lens group 4 and the assembly of the entire light source system.
  • Patent document CN105814681A proposes a substrate having a groove structure.
  • the opening of the recess is larger than the member to be joined, and the outer peripheral portion of the recess faced by the outer peripheral edge of the joined member is deeper than the central portion of the recess.
  • the invention is mainly for solving the problem that the chip position shift in the high-power semiconductor soldering process affects the deterioration of the yield of the subsequent metal wire bonding.
  • the substrate can improve the positional deviation of the chip in the planar direction, but the substrate cannot control the position of the chip in the vertical direction due to the uncontrollability of the solder in the vertical direction.
  • the present invention aims to prevent the joint member from being misaligned and to control the uniformity of the thickness of the bonding material so that the bonded member after welding is kept parallel with the substrate and the lens, thereby ensuring maximum light collection efficiency.
  • the present invention also aims to control the consistency of the thickness of the bonding material of different samples, thereby reducing the debugging work of different samples in the later stage.
  • a substrate comprising: a substrate body having a bonding surface for bonding the bonded member with a bonding material; a first groove structure, the first concave a groove structure formed in the joint surface and having an opening size equal to a size of the joined member to enable positioning of the engaged member in a planar direction of the joint surface; and a second groove structure, a second groove structure for accommodating the bonding material, the second groove structure being formed in the first groove structure and having a second depth such that the first groove structure is only capable of being along the periphery
  • a plurality of support positions supporting the joined member in the vertical direction have a first depth smaller than the second depth.
  • a method of forming a package structure using the above-described substrate comprising: providing the substrate; printing a bonding material to a bonding surface of the member to be joined; Attaching the joined component to the first groove structure of the substrate in a manner that the bonding surface of the component faces the substrate; placing a weight on the bonded component; The assembly including the substrate, the joined member, and the weight is placed in a vacuum eutectic furnace for welding to allow the bonding material to flow freely in the second groove structure of the substrate And after the welding is completed, the weight is removed.
  • a package structure comprising: the substrate described above; a member to be joined; and a bonding material for bonding the member to be bonded to the substrate Said joint surface.
  • the first groove structure since the opening size of the first groove structure completely corresponds to the size of the member to be joined, the first groove structure can accurately position the engaged member in the substrate in the planar direction.
  • the first groove structure since the depth of the first groove structure at the plurality of support positions along the periphery is smaller than the depth of the second groove structure, the first groove structure can support the joined member in the vertical direction.
  • Fig. 1 shows a package structure of a prior art wavelength conversion device.
  • Fig. 2 shows a perspective view of a substrate according to a first example of the present invention.
  • Fig. 3 shows a plan view of a substrate according to a first example of the present invention.
  • Fig. 4 shows a cross-sectional view taken along line A-A of Fig. 3.
  • Fig. 5 shows a cross-sectional view taken along line B-B of Fig. 3.
  • Fig. 6 shows a plan view of a package structure according to a first example of the present invention.
  • Fig. 7 shows a cross-sectional view taken along line C-C of Fig. 6.
  • Fig. 8 shows a cross-sectional view taken along line D-D of Fig. 6.
  • FIG. 10 shows a perspective view of a substrate according to a modification example 2 of the first example.
  • Fig. 11 shows a perspective view of a substrate according to a modification example 2 of the first example.
  • Fig. 12 shows a perspective view of a substrate according to a modification example 3 of the first example.
  • Figure 13 shows a perspective view of a substrate in accordance with a second example of the present invention.
  • FIG. 6 to 8 illustrate a state of a package structure formed using a substrate according to a first example of the present invention. Specifically, FIG. 6 shows a plan view of the package structure. 7 and 8 show cross-sectional views taken along line C-C and line D-D of Fig. 6, respectively.
  • the substrate of the present invention can be used to package various high power electronic chips, such as wavelength conversion chips and the like.
  • wavelength conversion chips are described herein as an example.
  • solder paste is used as an example of the bonding material.
  • the substrate 1 of the present invention includes a substrate body 11, a first groove structure 12, and a second groove structure 13.
  • the square substrate 1 may be formed by punching or cutting a copper plate material, wherein the copper plate material may have a thickness of 2 mm to 10 mm, preferably 3 mm.
  • the planar size of the copper substrate 1 may be 20 mm * 20 mm.
  • the material of the substrate 1 a pure copper or a copper alloy having a thermal conductivity of 300 w/m ⁇ k or more may be used, and a copper material having a thermal conductivity of 398 w/m ⁇ k is preferable.
  • the copper substrate is subjected to nickel plating treatment.
  • the first groove structure 12 and the second groove structure 13 are formed on the bonding surface of the substrate body 11 for bonding the wavelength conversion chip 3 by a process such as laser etching, chemical etching, or machining.
  • the wavelength conversion chip 3 may be an electronic chip such as a wavelength conversion chip.
  • the first groove structure 12 is for positioning the wavelength conversion chip 3 in the planar direction and supporting the wavelength conversion chip 3 in the vertical direction.
  • the shape of the electronic chip as the wavelength conversion chip 3 is generally square in view of cost and process simplification, but various shapes such as a rectangle, a triangle, a hexagon, and a circle are not excluded.
  • the planar shape of the first groove structure 12 i.e., the shape in Fig. 3 should correspond to the shape of the wavelength conversion chip.
  • the opening size of the first groove structure 12 must be equal to the size of the wavelength conversion chip.
  • the planar shape of the first groove structure 12 is square.
  • the wavelength conversion chip 3 should also have a square shape.
  • W0 5 mm.
  • the second groove structure 13 is a groove structure further formed in the first groove structure 12 and has a depth H2 (see FIG. 8).
  • the second groove structure 13 is a space for allowing the solder paste 2 to freely flow during the reflow soldering process.
  • the first groove structure 12 has a depth H1 smaller than the depth H2 only at the four corners along the circumference. That is, in the first groove structure 12, the formation position of the second groove structure 13 is a position other than the four corners. Thereby, the first groove structure 12 has four corner support positions which can be used to support the wavelength conversion chip 3 in the vertical direction along the periphery.
  • the second groove structure 13 may further be from the first recess
  • the four sides of the slot structure 12 extend outwardly into the exterior of the first groove structure 12 in four directions.
  • the second groove structure 13 also extends outwardly from the periphery of the first groove structure 12 between the four corner support locations to the exterior of the first groove structure 12.
  • the second groove structure 13 is shown as having a portion extending outside the first groove structure 12 in all of the drawings of the present invention, the second The groove structure 13 does not necessarily have to extend outward. Under the premise that the production process can ensure an appropriate amount of bonding material, the second groove structure without outward extension is sufficient to allow free flow of the bonding material during the reflow soldering process. In this case, the second groove structure 13 is formed only in the first groove structure 12. At the four sides of the first groove structure 12, the second groove structure 13 is flush with the first groove structure 12. The same applies to the examples described later.
  • the second groove structure 13 extends to the outside of the first groove structure 12
  • the second groove structure 13 is formed by the portion formed in the first groove structure 12 and formed in the first groove structure 12
  • the outer part is composed and thus has a cross-shaped planar shape.
  • the second groove structure 13 has a length W1 and a width W2. Since the second groove structure 13 is formed at a position other than the four corner support positions in the first groove structure 12, as shown in FIG. 5, the width W2 of the second groove structure 13 should be smaller than the first recess. The width W0 of the groove structure 12. Moreover, since the second groove structure 13 extends from the periphery of the first groove structure 12 between the four corner support positions to the outside of the first groove structure 12, as shown in FIG. The length W1 of the groove structure 13 should be greater than the width W0 of the first groove structure 12.
  • the difference between W0 and W2 may be 1 mm to 2 mm, preferably 1 mm.
  • the difference between W1 and W0 may be from 3 mm to 15 mm, preferably 5 mm.
  • FIGS. 6 to 8 illustrate a state of a package structure formed using a substrate according to a first example of the present invention.
  • a process of forming a package structure using the substrate according to the present invention and a package structure formed thereby will be described below with reference to FIGS. 6 to 8.
  • the solder paste 2 is printed on the bonding surface (for example, the metalized surface) of the wavelength conversion chip 3, for example, by a stencil printing method. Then, the wavelength conversion chip 3 is attached to the first groove structure 12 in such a manner that the bonding surface of the wavelength conversion chip 3 on which the solder paste is printed faces the substrate 1. Thereafter, a weight is placed on the wavelength conversion chip 3. Then, the assembly including the substrate, the wavelength conversion chip, and the weight block obtained at this time was placed in a vacuum reflow furnace, and welding was performed in accordance with the set temperature and pressure curves. At this time, the bonding material is free to flow in the second groove structure 13 of the substrate. Finally, after the welding is completed, the weights are removed. At this time, the package structure shown in FIG. 6 is obtained.
  • the depth H1 of the first groove structure 12 is equal to or smaller than the thickness H0 of the chip 3.
  • the difference between H0 and H1 may be 0 to 100 ⁇ m, preferably 50 ⁇ m.
  • the depth H2 of the second groove structure 13 is greater than the thickness H0 of the chip 3.
  • the solder paste 2 has a thickness of H2-H1 and a value of 100 to 300 ⁇ m, preferably 150 ⁇ m.
  • the first groove structure 12 since the opening size of the first groove structure 12 completely corresponds to the size of the chip 3, the first groove structure can accurately position the chip 3 in the substrate 1 in the planar direction. Even during the reflow soldering process, the chip 3 does not drift in the planar direction due to the fluidity and uncontrollability of the solder paste 2.
  • the first groove structure 12 can support the chip 3 in the vertical direction, thus, the chip 3 does not undergo any skew during the reflow soldering process.
  • the second groove structure 13 is formed in the first groove structure 12 and has a depth greater than the depth of the first groove structure 12, the solder paste 2 can be freely performed during the reflow soldering process Flowing, thereby improving the uniformity of the thickness of the solder paste 2 between the chip 3 and the substrate 1.
  • the second groove structure 13 may further have a portion extending to the outside of the first groove structure 12, even if the solder paste 2 exceeds a prescribed amount during the reflow soldering process, the second recess can be The groove structure 13 flows freely, thereby improving the uniformity of the thickness of the solder paste 2 between the chip 3 and the substrate 1.
  • the second groove structure extends outwardly from a perimeter of the first groove structure between the plurality of support locations.
  • the second groove structure may also extend outwardly from a portion of the perimeter of the first groove structure between the plurality of support locations.
  • this case will be explained by enumerating the modification examples 1 to 3.
  • FIG. 9 shows a perspective view of a substrate according to Modification Example 1.
  • the second groove structure 13 extends outward from the four sides of the first groove structure 12 to the outside of the first groove structure 12. However, as shown in FIG. 9, in the modification example 1, the second groove structure 13 extends outward from the three sides of the first groove structure 12 to the outside of the first groove structure 12, but not from the first concave The remaining one of the slots 12 (in this example, the upper side) extends outwardly.
  • the second groove structure 13 extends outward from the four sides of the first groove structure 12 to the outside of the first groove structure 12. However, as shown in FIGS. 10 and 11, in the modification example 2, the second groove structure 13 extends outward from the two opposite or adjacent sides of the first groove structure 12 to the outside of the first groove structure 12. But without the remaining two opposite sides of the first groove structure 12 (in this example, the upper and lower sides of Figure 10) or adjacent sides (in this example, the lower side of Figure 11 And the right side) extends outward.
  • first groove structure 12 and the second groove structure 13 are flush.
  • first groove structure 12 and the second groove structure 13 are flush.
  • FIG. 12 shows a perspective view of a substrate according to Modification Example 1.
  • the second groove structure 13 extends outward from the four sides of the first groove structure 12 to the outside of the first groove structure 12.
  • the second groove structure 13 extends outward from one side of the first groove structure 12 to the outside of the first groove structure 12, but without the first groove
  • the remaining three sides of structure 12 in this example, the upper side, the lower side, and the left side
  • a plurality of support positions are provided at the four corners of the periphery of the first groove structure.
  • the number of these support positions can be more or less, and the set position can be not limited to the corner position.
  • the first groove structure has a square planar shape.
  • the first groove structure may also be other shapes than squares, such as rectangles, triangles, hexagons, circles, and the like.
  • a plurality of support positions may be appropriately disposed along the circumference of the first groove structure to be capable of supporting the chip in the vertical direction.
  • the second groove structure may also extend outward from at least a portion of the periphery of the first groove structure between the plurality of support positions.
  • a high thermal conductivity heat conduction stage 5 for conducting heat from the chip 3 is further provided in the second groove structure 13 for improving the thermal performance of the package structure.
  • other configurations of the substrate according to the second example may adopt configurations of the first example and its modifications.
  • the thermal pad 5 may be a portion of the material that is intentionally retained when the second groove structure 13 is formed in the substrate 1. At this time, the material of the heat transfer stage 5 is the same as that of the substrate. Since the thermal conductivity of copper is 7 to 8 times higher than that of tin, the thermal conductivity can be improved by forming the high thermal conductivity thermal conduction stage 5.
  • the upper surface of the heat conducting stage 5 is at most flush with the bottom of the first groove structure 12, i.e., does not exceed the bottom of the groove structure 12 in height.
  • the heat transfer stage 5 is formed below the heat generating position of the wavelength conversion chip, that is, below the area for receiving and converting the excitation light.
  • the shape of the upper surface of the heat transfer stage 5 corresponds to the spot shape of the excitation light, and may be any shape such as a square, a rectangle, or a circle.
  • the area of the upper surface of the heat transfer stage 5 is slightly larger than the area of the area of the wavelength conversion chip that receives the excitation light.
  • the substrate according to the second example can also obtain the same actions and effects as the first example and its modified example.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Led Device Packages (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Cette invention concerne un substrat (1), comprenant : un corps de substrat (11), une première structure d'évidement (12) et une seconde structure d'évidement (13). Le corps de substrat a une surface de soudure qui soude un composant soudé (3) au moyen d'un matériau de soudure (2). La première structure d'évidement est formée dans la surface de soudure, et comprend une ouverture ayant une taille égale à la taille du composant soudé de telle sorte que le composant soudé puisse être orienté dans une direction du plan de la surface de soudure. La seconde structure d'évidement est formée dans la première structure d'évidement et a une seconde profondeur de telle sorte que la première structure d'évidement a une première profondeur inférieure à la seconde profondeur uniquement à une pluralité de positions de support le long du périmètre, le composant soudé pouvant être supporté dans une direction verticale sur les positions de support.
PCT/CN2018/080876 2018-01-05 2018-03-28 Substrat, procédé de formation d'une structure d'encapsulation à l'aide d'un substrat, et structure d'encapsulation WO2019134268A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201810011733.3A CN110010557B (zh) 2018-01-05 2018-01-05 基板、利用基板形成封装结构的方法和封装结构
CN201810011733.3 2018-01-05

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WO2019134268A1 true WO2019134268A1 (fr) 2019-07-11

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WO (1) WO2019134268A1 (fr)

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