WO2019134268A1 - Substrate, method for forming package structure by using substrate, and package structure - Google Patents

Substrate, method for forming package structure by using substrate, and package structure Download PDF

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Publication number
WO2019134268A1
WO2019134268A1 PCT/CN2018/080876 CN2018080876W WO2019134268A1 WO 2019134268 A1 WO2019134268 A1 WO 2019134268A1 CN 2018080876 W CN2018080876 W CN 2018080876W WO 2019134268 A1 WO2019134268 A1 WO 2019134268A1
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WO
WIPO (PCT)
Prior art keywords
groove structure
substrate
substrate according
joined
bonding
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PCT/CN2018/080876
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French (fr)
Chinese (zh)
Inventor
段银祥
周萌
徐虎
田梓峰
张世忠
许颜正
Original Assignee
深圳市绎立锐光科技开发有限公司
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Publication of WO2019134268A1 publication Critical patent/WO2019134268A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/023Mount members, e.g. sub-mount members
    • H01S5/02315Support members, e.g. bases or carriers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00Soldering, e.g. brazing, or unsoldering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52Mounting semiconductor bodies in containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/023Mount members, e.g. sub-mount members
    • H01S5/0232Lead-frames
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0233Mounting configuration of laser chips
    • H01S5/02345Wire-bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0235Method for mounting laser chips
    • H01S5/02355Fixing laser chips on mounts
    • H01S5/02365Fixing laser chips on mounts by clamping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/024Arrangements for thermal management
    • H01S5/02469Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1515Shape
    • H01L2924/15153Shape the die mounting substrate comprising a recess for hosting the device
    • H01L2924/15155Shape the die mounting substrate comprising a recess for hosting the device the shape of the recess being other than a cuboid
    • H01L2924/15156Side view
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1515Shape
    • H01L2924/15153Shape the die mounting substrate comprising a recess for hosting the device
    • H01L2924/15155Shape the die mounting substrate comprising a recess for hosting the device the shape of the recess being other than a cuboid
    • H01L2924/15157Top view
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • H01L2924/1815Shape
    • H01L2924/1816Exposing the passive side of the semiconductor or solid-state body
    • H01L2924/18165Exposing the passive side of the semiconductor or solid-state body of a wire bonded chip

Definitions

  • the present invention relates to a substrate, a substrate packaging method, and a package structure, and more particularly to a substrate capable of strictly controlling thickness uniformity of a bonding material and positioning of a bonded member in a device packaging process, a package structure forming method using the substrate, and a package structure.
  • a light source that uses a blue laser diode (LD) to excite a wavelength conversion device has the advantages of high efficiency, high brightness, and the like.
  • the blue LD has a small spot size and a large power, and thus its optical power density is large, the heat dissipation performance of the wavelength conversion device is required to be high.
  • a typical wavelength conversion device having, for example, a "thermally conductive substrate + diffuse reflection layer + luminescent layer” structure cannot meet its heat dissipation requirements.
  • the "thermally conductive substrate + diffuse reflection layer + luminescent layer” structure is more advantageous for heat dissipation.
  • the "thermally conductive substrate + diffuse reflection layer + luminescent layer” structure mainly uses solder to weld metallized luminescent ceramic or glass to a copper substrate.
  • Fig. 1 shows such a wavelength conversion device package structure.
  • the package structure includes a copper substrate 1, a solder paste 2, a wavelength conversion chip 3 composed of a wavelength converting material 32 and a metallization layer 31, and a lens group 4.
  • the excitation light having the wavelength ⁇ 1 is incident to the wavelength conversion material 32 through the lens group 4, so that the wavelength conversion material 32 emits a laser light having a wavelength ⁇ 1 different from the wavelength ⁇ 1.
  • the solder paste 2 is a bonding layer for connecting the wavelength conversion chip 3 as a member to be bonded to the copper substrate 1.
  • the thickness of the solder paste 2 becomes uneven due to the influence of the viscosity, wettability, and soldering process of the solder material.
  • the fluidity and uncontrollability of liquid tin during the reflow soldering process can cause the position of the wavelength conversion chip to drift and/or skew.
  • the offset chip will affect the light collection efficiency of the lens group 4 and the assembly of the entire light source system.
  • Patent document CN105814681A proposes a substrate having a groove structure.
  • the opening of the recess is larger than the member to be joined, and the outer peripheral portion of the recess faced by the outer peripheral edge of the joined member is deeper than the central portion of the recess.
  • the invention is mainly for solving the problem that the chip position shift in the high-power semiconductor soldering process affects the deterioration of the yield of the subsequent metal wire bonding.
  • the substrate can improve the positional deviation of the chip in the planar direction, but the substrate cannot control the position of the chip in the vertical direction due to the uncontrollability of the solder in the vertical direction.
  • the present invention aims to prevent the joint member from being misaligned and to control the uniformity of the thickness of the bonding material so that the bonded member after welding is kept parallel with the substrate and the lens, thereby ensuring maximum light collection efficiency.
  • the present invention also aims to control the consistency of the thickness of the bonding material of different samples, thereby reducing the debugging work of different samples in the later stage.
  • a substrate comprising: a substrate body having a bonding surface for bonding the bonded member with a bonding material; a first groove structure, the first concave a groove structure formed in the joint surface and having an opening size equal to a size of the joined member to enable positioning of the engaged member in a planar direction of the joint surface; and a second groove structure, a second groove structure for accommodating the bonding material, the second groove structure being formed in the first groove structure and having a second depth such that the first groove structure is only capable of being along the periphery
  • a plurality of support positions supporting the joined member in the vertical direction have a first depth smaller than the second depth.
  • a method of forming a package structure using the above-described substrate comprising: providing the substrate; printing a bonding material to a bonding surface of the member to be joined; Attaching the joined component to the first groove structure of the substrate in a manner that the bonding surface of the component faces the substrate; placing a weight on the bonded component; The assembly including the substrate, the joined member, and the weight is placed in a vacuum eutectic furnace for welding to allow the bonding material to flow freely in the second groove structure of the substrate And after the welding is completed, the weight is removed.
  • a package structure comprising: the substrate described above; a member to be joined; and a bonding material for bonding the member to be bonded to the substrate Said joint surface.
  • the first groove structure since the opening size of the first groove structure completely corresponds to the size of the member to be joined, the first groove structure can accurately position the engaged member in the substrate in the planar direction.
  • the first groove structure since the depth of the first groove structure at the plurality of support positions along the periphery is smaller than the depth of the second groove structure, the first groove structure can support the joined member in the vertical direction.
  • Fig. 1 shows a package structure of a prior art wavelength conversion device.
  • Fig. 2 shows a perspective view of a substrate according to a first example of the present invention.
  • Fig. 3 shows a plan view of a substrate according to a first example of the present invention.
  • Fig. 4 shows a cross-sectional view taken along line A-A of Fig. 3.
  • Fig. 5 shows a cross-sectional view taken along line B-B of Fig. 3.
  • Fig. 6 shows a plan view of a package structure according to a first example of the present invention.
  • Fig. 7 shows a cross-sectional view taken along line C-C of Fig. 6.
  • Fig. 8 shows a cross-sectional view taken along line D-D of Fig. 6.
  • FIG. 10 shows a perspective view of a substrate according to a modification example 2 of the first example.
  • Fig. 11 shows a perspective view of a substrate according to a modification example 2 of the first example.
  • Fig. 12 shows a perspective view of a substrate according to a modification example 3 of the first example.
  • Figure 13 shows a perspective view of a substrate in accordance with a second example of the present invention.
  • FIG. 6 to 8 illustrate a state of a package structure formed using a substrate according to a first example of the present invention. Specifically, FIG. 6 shows a plan view of the package structure. 7 and 8 show cross-sectional views taken along line C-C and line D-D of Fig. 6, respectively.
  • the substrate of the present invention can be used to package various high power electronic chips, such as wavelength conversion chips and the like.
  • wavelength conversion chips are described herein as an example.
  • solder paste is used as an example of the bonding material.
  • the substrate 1 of the present invention includes a substrate body 11, a first groove structure 12, and a second groove structure 13.
  • the square substrate 1 may be formed by punching or cutting a copper plate material, wherein the copper plate material may have a thickness of 2 mm to 10 mm, preferably 3 mm.
  • the planar size of the copper substrate 1 may be 20 mm * 20 mm.
  • the material of the substrate 1 a pure copper or a copper alloy having a thermal conductivity of 300 w/m ⁇ k or more may be used, and a copper material having a thermal conductivity of 398 w/m ⁇ k is preferable.
  • the copper substrate is subjected to nickel plating treatment.
  • the first groove structure 12 and the second groove structure 13 are formed on the bonding surface of the substrate body 11 for bonding the wavelength conversion chip 3 by a process such as laser etching, chemical etching, or machining.
  • the wavelength conversion chip 3 may be an electronic chip such as a wavelength conversion chip.
  • the first groove structure 12 is for positioning the wavelength conversion chip 3 in the planar direction and supporting the wavelength conversion chip 3 in the vertical direction.
  • the shape of the electronic chip as the wavelength conversion chip 3 is generally square in view of cost and process simplification, but various shapes such as a rectangle, a triangle, a hexagon, and a circle are not excluded.
  • the planar shape of the first groove structure 12 i.e., the shape in Fig. 3 should correspond to the shape of the wavelength conversion chip.
  • the opening size of the first groove structure 12 must be equal to the size of the wavelength conversion chip.
  • the planar shape of the first groove structure 12 is square.
  • the wavelength conversion chip 3 should also have a square shape.
  • W0 5 mm.
  • the second groove structure 13 is a groove structure further formed in the first groove structure 12 and has a depth H2 (see FIG. 8).
  • the second groove structure 13 is a space for allowing the solder paste 2 to freely flow during the reflow soldering process.
  • the first groove structure 12 has a depth H1 smaller than the depth H2 only at the four corners along the circumference. That is, in the first groove structure 12, the formation position of the second groove structure 13 is a position other than the four corners. Thereby, the first groove structure 12 has four corner support positions which can be used to support the wavelength conversion chip 3 in the vertical direction along the periphery.
  • the second groove structure 13 may further be from the first recess
  • the four sides of the slot structure 12 extend outwardly into the exterior of the first groove structure 12 in four directions.
  • the second groove structure 13 also extends outwardly from the periphery of the first groove structure 12 between the four corner support locations to the exterior of the first groove structure 12.
  • the second groove structure 13 is shown as having a portion extending outside the first groove structure 12 in all of the drawings of the present invention, the second The groove structure 13 does not necessarily have to extend outward. Under the premise that the production process can ensure an appropriate amount of bonding material, the second groove structure without outward extension is sufficient to allow free flow of the bonding material during the reflow soldering process. In this case, the second groove structure 13 is formed only in the first groove structure 12. At the four sides of the first groove structure 12, the second groove structure 13 is flush with the first groove structure 12. The same applies to the examples described later.
  • the second groove structure 13 extends to the outside of the first groove structure 12
  • the second groove structure 13 is formed by the portion formed in the first groove structure 12 and formed in the first groove structure 12
  • the outer part is composed and thus has a cross-shaped planar shape.
  • the second groove structure 13 has a length W1 and a width W2. Since the second groove structure 13 is formed at a position other than the four corner support positions in the first groove structure 12, as shown in FIG. 5, the width W2 of the second groove structure 13 should be smaller than the first recess. The width W0 of the groove structure 12. Moreover, since the second groove structure 13 extends from the periphery of the first groove structure 12 between the four corner support positions to the outside of the first groove structure 12, as shown in FIG. The length W1 of the groove structure 13 should be greater than the width W0 of the first groove structure 12.
  • the difference between W0 and W2 may be 1 mm to 2 mm, preferably 1 mm.
  • the difference between W1 and W0 may be from 3 mm to 15 mm, preferably 5 mm.
  • FIGS. 6 to 8 illustrate a state of a package structure formed using a substrate according to a first example of the present invention.
  • a process of forming a package structure using the substrate according to the present invention and a package structure formed thereby will be described below with reference to FIGS. 6 to 8.
  • the solder paste 2 is printed on the bonding surface (for example, the metalized surface) of the wavelength conversion chip 3, for example, by a stencil printing method. Then, the wavelength conversion chip 3 is attached to the first groove structure 12 in such a manner that the bonding surface of the wavelength conversion chip 3 on which the solder paste is printed faces the substrate 1. Thereafter, a weight is placed on the wavelength conversion chip 3. Then, the assembly including the substrate, the wavelength conversion chip, and the weight block obtained at this time was placed in a vacuum reflow furnace, and welding was performed in accordance with the set temperature and pressure curves. At this time, the bonding material is free to flow in the second groove structure 13 of the substrate. Finally, after the welding is completed, the weights are removed. At this time, the package structure shown in FIG. 6 is obtained.
  • the depth H1 of the first groove structure 12 is equal to or smaller than the thickness H0 of the chip 3.
  • the difference between H0 and H1 may be 0 to 100 ⁇ m, preferably 50 ⁇ m.
  • the depth H2 of the second groove structure 13 is greater than the thickness H0 of the chip 3.
  • the solder paste 2 has a thickness of H2-H1 and a value of 100 to 300 ⁇ m, preferably 150 ⁇ m.
  • the first groove structure 12 since the opening size of the first groove structure 12 completely corresponds to the size of the chip 3, the first groove structure can accurately position the chip 3 in the substrate 1 in the planar direction. Even during the reflow soldering process, the chip 3 does not drift in the planar direction due to the fluidity and uncontrollability of the solder paste 2.
  • the first groove structure 12 can support the chip 3 in the vertical direction, thus, the chip 3 does not undergo any skew during the reflow soldering process.
  • the second groove structure 13 is formed in the first groove structure 12 and has a depth greater than the depth of the first groove structure 12, the solder paste 2 can be freely performed during the reflow soldering process Flowing, thereby improving the uniformity of the thickness of the solder paste 2 between the chip 3 and the substrate 1.
  • the second groove structure 13 may further have a portion extending to the outside of the first groove structure 12, even if the solder paste 2 exceeds a prescribed amount during the reflow soldering process, the second recess can be The groove structure 13 flows freely, thereby improving the uniformity of the thickness of the solder paste 2 between the chip 3 and the substrate 1.
  • the second groove structure extends outwardly from a perimeter of the first groove structure between the plurality of support locations.
  • the second groove structure may also extend outwardly from a portion of the perimeter of the first groove structure between the plurality of support locations.
  • this case will be explained by enumerating the modification examples 1 to 3.
  • FIG. 9 shows a perspective view of a substrate according to Modification Example 1.
  • the second groove structure 13 extends outward from the four sides of the first groove structure 12 to the outside of the first groove structure 12. However, as shown in FIG. 9, in the modification example 1, the second groove structure 13 extends outward from the three sides of the first groove structure 12 to the outside of the first groove structure 12, but not from the first concave The remaining one of the slots 12 (in this example, the upper side) extends outwardly.
  • the second groove structure 13 extends outward from the four sides of the first groove structure 12 to the outside of the first groove structure 12. However, as shown in FIGS. 10 and 11, in the modification example 2, the second groove structure 13 extends outward from the two opposite or adjacent sides of the first groove structure 12 to the outside of the first groove structure 12. But without the remaining two opposite sides of the first groove structure 12 (in this example, the upper and lower sides of Figure 10) or adjacent sides (in this example, the lower side of Figure 11 And the right side) extends outward.
  • first groove structure 12 and the second groove structure 13 are flush.
  • first groove structure 12 and the second groove structure 13 are flush.
  • FIG. 12 shows a perspective view of a substrate according to Modification Example 1.
  • the second groove structure 13 extends outward from the four sides of the first groove structure 12 to the outside of the first groove structure 12.
  • the second groove structure 13 extends outward from one side of the first groove structure 12 to the outside of the first groove structure 12, but without the first groove
  • the remaining three sides of structure 12 in this example, the upper side, the lower side, and the left side
  • a plurality of support positions are provided at the four corners of the periphery of the first groove structure.
  • the number of these support positions can be more or less, and the set position can be not limited to the corner position.
  • the first groove structure has a square planar shape.
  • the first groove structure may also be other shapes than squares, such as rectangles, triangles, hexagons, circles, and the like.
  • a plurality of support positions may be appropriately disposed along the circumference of the first groove structure to be capable of supporting the chip in the vertical direction.
  • the second groove structure may also extend outward from at least a portion of the periphery of the first groove structure between the plurality of support positions.
  • a high thermal conductivity heat conduction stage 5 for conducting heat from the chip 3 is further provided in the second groove structure 13 for improving the thermal performance of the package structure.
  • other configurations of the substrate according to the second example may adopt configurations of the first example and its modifications.
  • the thermal pad 5 may be a portion of the material that is intentionally retained when the second groove structure 13 is formed in the substrate 1. At this time, the material of the heat transfer stage 5 is the same as that of the substrate. Since the thermal conductivity of copper is 7 to 8 times higher than that of tin, the thermal conductivity can be improved by forming the high thermal conductivity thermal conduction stage 5.
  • the upper surface of the heat conducting stage 5 is at most flush with the bottom of the first groove structure 12, i.e., does not exceed the bottom of the groove structure 12 in height.
  • the heat transfer stage 5 is formed below the heat generating position of the wavelength conversion chip, that is, below the area for receiving and converting the excitation light.
  • the shape of the upper surface of the heat transfer stage 5 corresponds to the spot shape of the excitation light, and may be any shape such as a square, a rectangle, or a circle.
  • the area of the upper surface of the heat transfer stage 5 is slightly larger than the area of the area of the wavelength conversion chip that receives the excitation light.
  • the substrate according to the second example can also obtain the same actions and effects as the first example and its modified example.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Led Device Packages (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Provided is a substrate (1), comprising: a substrate body (11), a first recess structure (12), and a second recess structure (13). The substrate body has a bonding surface that bonds a bonded component (3) by means of a bonding material (2). The first recess structure is formed in the bonding surface, and comprises an opening having a size equal to the size of the bonded component so that the bonded component can be oriented in a plane direction of the bonding surface. The second recess structure is formed in the first recess structure and has a second depth such that the first recess structure has a first depth less than the second depth only at a plurality of support positions along the perimeter, wherein the bonded component can be supported in a vertical direction at the support positions.

Description

基板、利用基板形成封装结构的方法和封装结构Substrate, method and package structure for forming package structure using substrate 技术领域Technical field
本发明涉及基板、基板封装方法和封装结构,并尤其涉及能够在装置封装过程中严格控制接合材料的厚度均一性及被接合部件的定位的基板、利用基板的封装结构形成方法和封装结构。The present invention relates to a substrate, a substrate packaging method, and a package structure, and more particularly to a substrate capable of strictly controlling thickness uniformity of a bonding material and positioning of a bonded member in a device packaging process, a package structure forming method using the substrate, and a package structure.
背景技术Background technique
采用蓝光激光二极管(LD)激发波长转换装置的光源具有高效率、高亮度等优点。然而,由于蓝光LD的光斑小且功率大,并进而其光功率密度较大,所以对波长换转装置的散热性能要求较高。通常的例如具有“导热基板+漫反射层+发光层”结构的波长转换装置无法满足其散热需求。相比地,“导热基板+漫反射层+发光层”结构更有利于散热。A light source that uses a blue laser diode (LD) to excite a wavelength conversion device has the advantages of high efficiency, high brightness, and the like. However, since the blue LD has a small spot size and a large power, and thus its optical power density is large, the heat dissipation performance of the wavelength conversion device is required to be high. A typical wavelength conversion device having, for example, a "thermally conductive substrate + diffuse reflection layer + luminescent layer" structure cannot meet its heat dissipation requirements. In contrast, the "thermally conductive substrate + diffuse reflection layer + luminescent layer" structure is more advantageous for heat dissipation.
目前,“导热基板+漫反射层+发光层”结构主要是采用焊料将金属化的发光陶瓷或者玻璃与铜基板进行焊接。图1示出了这种波长转换装置封装结构。如图1所示,封装结构包括铜基板1、焊锡膏2、由波长转换材料32和金属化层31构成的波长转换芯片3以及透镜组4。在此结构中,具有波长λ1的激发光通过透镜组4入射到波长转换材料32,使得波长转换材料32发出具有不同于波长λ1的波长λ1的受激光。At present, the "thermally conductive substrate + diffuse reflection layer + luminescent layer" structure mainly uses solder to weld metallized luminescent ceramic or glass to a copper substrate. Fig. 1 shows such a wavelength conversion device package structure. As shown in FIG. 1, the package structure includes a copper substrate 1, a solder paste 2, a wavelength conversion chip 3 composed of a wavelength converting material 32 and a metallization layer 31, and a lens group 4. In this configuration, the excitation light having the wavelength λ1 is incident to the wavelength conversion material 32 through the lens group 4, so that the wavelength conversion material 32 emits a laser light having a wavelength λ1 different from the wavelength λ1.
焊锡膏2是用于将作为被接合部件的波长转换芯片3连接至铜基板1的接合层。由于焊锡材料的粘度、润湿性及焊接工艺等条件的影响,焊锡膏2的厚度变得不均匀。同时,在回流焊接工艺过程中,液态锡的流动性及不可控性会导致波长转换芯片的位置发生漂移和/或歪斜。偏位后的芯片将影响透镜组4的收光效率及整个光源系统的组装。The solder paste 2 is a bonding layer for connecting the wavelength conversion chip 3 as a member to be bonded to the copper substrate 1. The thickness of the solder paste 2 becomes uneven due to the influence of the viscosity, wettability, and soldering process of the solder material. At the same time, the fluidity and uncontrollability of liquid tin during the reflow soldering process can cause the position of the wavelength conversion chip to drift and/or skew. The offset chip will affect the light collection efficiency of the lens group 4 and the assembly of the entire light source system.
为解决被接合部件的偏位及接合层的厚度均一性,目前提出了以下技术。In order to solve the misalignment of the joined member and the thickness uniformity of the bonding layer, the following technique has been proposed.
例如,专利文献CN104517931B提出一种在表面上设置有突出支点阵列的基板。通过基板上的支点阵列来控制衬板与基板之间的焊层的厚度均一性。进一步,支点阵列位于衬板的背面和/或基板的表面的四周或 四角。这样的设计使得支点阵列在起到支撑作用的前提下不会阻挡焊层的流动,从而最大程度地降低了在焊层中出现空洞和非连续性焊点的几率。然而,采用此铜基板并不能解决衬板偏位的问题。而且,为解决衬板偏位问题,需要通过定位治具进行修正,这增加了工艺的复杂性和成本。For example, the patent document CN104517931B proposes a substrate provided with an array of protruding fulcrums on the surface. The thickness uniformity of the solder layer between the liner and the substrate is controlled by an array of fulcrums on the substrate. Further, the array of fulcrums is located on the back side of the liner and/or around the four corners of the surface of the substrate. This design allows the fulcrum array to resist the flow of the solder layer while supporting, thereby minimizing the chance of voids and discontinuous solder joints in the solder layer. However, the use of this copper substrate does not solve the problem of lining offset. Moreover, in order to solve the problem of the lining offset, it is necessary to correct by the positioning fixture, which increases the complexity and cost of the process.
专利文献CN105814681A提出一种具有凹槽结构的基板。在该基板中,凹处的开口比被接合部件大,被接合部件的外周缘所面对的凹处外周部比凹处中央部深。该发明主要是为了解决大功率半导体焊接过程中芯片位置偏移而影响后续金属线绑定时成品率恶化等问题。该基板能改善芯片平面方向位置偏移,但是由于焊锡在垂直方向的不可控性,该基板不能控制芯片在垂直方向上的位置。Patent document CN105814681A proposes a substrate having a groove structure. In the substrate, the opening of the recess is larger than the member to be joined, and the outer peripheral portion of the recess faced by the outer peripheral edge of the joined member is deeper than the central portion of the recess. The invention is mainly for solving the problem that the chip position shift in the high-power semiconductor soldering process affects the deterioration of the yield of the subsequent metal wire bonding. The substrate can improve the positional deviation of the chip in the planar direction, but the substrate cannot control the position of the chip in the vertical direction due to the uncontrollability of the solder in the vertical direction.
总而言之,目前采用锡基合金共晶焊等方式将波长转换芯片焊接于普通铜基板上存在一些问题。具体地,在焊接过程中由于锡合金在液态时的不可控性,焊接后会出现焊接层厚度不一致,引起波长转换芯片歪斜、偏位,焊接后样品的一致性较差。In summary, there are some problems in soldering wavelength conversion chips to common copper substrates by means of tin-based alloy eutectic soldering. Specifically, in the soldering process, due to the uncontrollability of the tin alloy in the liquid state, the thickness of the soldering layer may be inconsistent after soldering, causing the wavelength conversion chip to be skewed and misaligned, and the consistency of the sample after soldering is poor.
发明内容Summary of the invention
针对现有技术的不足,本发明旨在防止被接合部件偏位并控制接合材料厚度的均一性,使得焊接后的被接合部件与基板及透镜保持平行,从而保证最大的收光效率。此外,本发明也旨在控制不同样品的接合材料厚度具有一致性,由此减小了后期不同样品的调试工作。In view of the deficiencies of the prior art, the present invention aims to prevent the joint member from being misaligned and to control the uniformity of the thickness of the bonding material so that the bonded member after welding is kept parallel with the substrate and the lens, thereby ensuring maximum light collection efficiency. In addition, the present invention also aims to control the consistency of the thickness of the bonding material of different samples, thereby reducing the debugging work of different samples in the later stage.
根据本发明的第一方面,提供了一种基板,所述基板包括:基板本体,所述基板本体具有利用接合材料来接合被接合部件的接合面;第一凹槽结构,所述第一凹槽结构形成在所述接合面中,并具有等于所述被接合部件的尺寸的开口尺寸以能够在所述接合面的平面方向上定位所述被接合部件;及第二凹槽结构,所述第二凹槽结构用于容纳所述接合材料,所述第二凹槽结构形成在所述第一凹槽结构中并具有第二深度,使得所述第一凹槽结构仅在沿周边的能够在垂直方向上支撑所述被接合部件的多个支撑位置处具有小于所述第二深度的第一深度。According to a first aspect of the present invention, there is provided a substrate comprising: a substrate body having a bonding surface for bonding the bonded member with a bonding material; a first groove structure, the first concave a groove structure formed in the joint surface and having an opening size equal to a size of the joined member to enable positioning of the engaged member in a planar direction of the joint surface; and a second groove structure, a second groove structure for accommodating the bonding material, the second groove structure being formed in the first groove structure and having a second depth such that the first groove structure is only capable of being along the periphery A plurality of support positions supporting the joined member in the vertical direction have a first depth smaller than the second depth.
根据本发明的第二方面,提供了一种利用上述的基板形成封装结构 的方法,所述方法包括:提供所述基板;将接合材料印刷至被接合部件的接合表面;以使所述被接合部件的接合表面面向所述基板的方式,将所述被接合部件贴装在所述基板的所述第一凹槽结构处;在所述被接合部件上放置配重块;将此时获得的包括所述基板、所述被接合部件和所述配重块的组合体放置在真空共晶炉中进行焊接,以允许所述接合材料在所述基板的所述第二凹槽结构中自由流动;且在焊接完成后,移除所述配重块。According to a second aspect of the present invention, there is provided a method of forming a package structure using the above-described substrate, the method comprising: providing the substrate; printing a bonding material to a bonding surface of the member to be joined; Attaching the joined component to the first groove structure of the substrate in a manner that the bonding surface of the component faces the substrate; placing a weight on the bonded component; The assembly including the substrate, the joined member, and the weight is placed in a vacuum eutectic furnace for welding to allow the bonding material to flow freely in the second groove structure of the substrate And after the welding is completed, the weight is removed.
根据本发明的第三方面,提供了一种封装结构,所述封装结构包括:上述的基板;被接合部件;以及接合材料,所述接合材料用于将所述被接合部件接合至所述基板的所述接合面上。According to a third aspect of the present invention, there is provided a package structure comprising: the substrate described above; a member to be joined; and a bonding material for bonding the member to be bonded to the substrate Said joint surface.
根据本发明,由于第一凹槽结构的开口尺寸完全对应于被接合部件的尺寸,所以第一凹槽结构能够在平面方向上精确地定位被接合部件在基板中的位置。According to the present invention, since the opening size of the first groove structure completely corresponds to the size of the member to be joined, the first groove structure can accurately position the engaged member in the substrate in the planar direction.
另外,根据本发明,由于第一凹槽结构在沿周边的多个支撑位置的深度小于第二凹槽结构的深度,所以第一凹槽结构能够在垂直方向上支撑被接合部件。Further, according to the present invention, since the depth of the first groove structure at the plurality of support positions along the periphery is smaller than the depth of the second groove structure, the first groove structure can support the joined member in the vertical direction.
由此,根据本发明的第一至第三方面,能够在装置封装过程中严格控制接合材料的厚度均一性及被接合部件的定位。Thus, according to the first to third aspects of the invention, it is possible to strictly control the thickness uniformity of the bonding material and the positioning of the joined member in the device packaging process.
下面结合附图和具体实施例,对本发明的技术方案进行详细说明。The technical solutions of the present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
附图说明DRAWINGS
为了更清楚地说明本发明实施例或现有技术中的技术方案,以下将对实施例描述中所需要使用的附图作简单地介绍,以下描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员而言,在不付出创造性劳动的前提下,还可以根据这些附图所示实施例得到其它的实施例及其附图。In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments will be briefly described below, and the drawings in the following description are only some embodiments of the present invention. Other embodiments and their drawings may be derived from the embodiments shown in the drawings without departing from the scope of the invention.
图1示出现有技术的波长转换装置的封装结构。Fig. 1 shows a package structure of a prior art wavelength conversion device.
图2示出了根据本发明的第一示例的基板的立体图。Fig. 2 shows a perspective view of a substrate according to a first example of the present invention.
图3示出了根据本发明的第一示例的基板的平面图。Fig. 3 shows a plan view of a substrate according to a first example of the present invention.
图4示出了沿图3的A-A线截取的剖面图。Fig. 4 shows a cross-sectional view taken along line A-A of Fig. 3.
图5示出了沿图3的B-B线截取的剖面图。Fig. 5 shows a cross-sectional view taken along line B-B of Fig. 3.
图6示出了根据本发明的第一示例的封装结构的平面图。Fig. 6 shows a plan view of a package structure according to a first example of the present invention.
图7示出了沿图6的C-C线截取的剖面图。Fig. 7 shows a cross-sectional view taken along line C-C of Fig. 6.
图8示出了沿图6的D-D线截取的剖面图。Fig. 8 shows a cross-sectional view taken along line D-D of Fig. 6.
图9示出了根据第一示例的变形示例1的基板的立体图。FIG. 9 shows a perspective view of a substrate according to a modification example 1 of the first example.
图10示出了根据第一示例的变形示例2的基板的立体图。FIG. 10 shows a perspective view of a substrate according to a modification example 2 of the first example.
图11示出了根据第一示例的变形示例2的基板的立体图。Fig. 11 shows a perspective view of a substrate according to a modification example 2 of the first example.
图12示出了根据第一示例的变形示例3的基板的立体图。Fig. 12 shows a perspective view of a substrate according to a modification example 3 of the first example.
图13示出了根据本发明的第二示例的基板的立体图。Figure 13 shows a perspective view of a substrate in accordance with a second example of the present invention.
具体实施方式Detailed ways
以下将结合附图对本发明各实施例的技术方案进行清楚、完整的描述,显然,所描述的实施例仅是本发明的一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动的前提下所得到的所有其它实施例,都属于本发明所保护的范围。The technical solutions of the various embodiments of the present invention are clearly and completely described in the following with reference to the accompanying drawings. It is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative efforts are within the scope of the present invention.
注意,附图是示意性的,且不是基于实际比例绘制的。附图中图示的部件的相对尺度和比例在尺寸方面被放大或缩小,且任何尺度仅是示例性的且不具有限制性。附图中的相同的结构、元件或部件由相同的附图标记表示。Note that the drawings are schematic and are not drawn based on actual scales. The relative dimensions and proportions of the components illustrated in the figures are exaggerated or reduced in size, and any dimensions are merely exemplary and not limiting. The same structures, elements or components in the drawings are denoted by the same reference numerals.
基板的第一示例First example of substrate
图2至图5示出了根据本发明的第一示例的基板。具体地,图2示出了本发明的基板的立体图。图3示出了本发明的基板的平面图。图4和图5分别示出了沿图2的A-A线和B-B线截取的剖面图。2 to 5 illustrate a substrate according to a first example of the present invention. Specifically, FIG. 2 shows a perspective view of a substrate of the present invention. Figure 3 shows a plan view of a substrate of the present invention. 4 and 5 respectively show cross-sectional views taken along line A-A and line B-B of Fig. 2.
图6至图8示出了利用根据本发明的第一示例的基板形成的封装结构的状态。具体地,图6示出了封装结构的平面图。图7和图8分别示出了沿图6的C-C线和D-D线截取的剖面图。6 to 8 illustrate a state of a package structure formed using a substrate according to a first example of the present invention. Specifically, FIG. 6 shows a plan view of the package structure. 7 and 8 show cross-sectional views taken along line C-C and line D-D of Fig. 6, respectively.
本发明的基板可以用于封装各种高功率电子芯片,例如波长转换芯 片等。仅出于说明的目的,在本文中,以波长转换芯片为示例进行说明。此时,采用焊锡膏作为接合材料的示例。The substrate of the present invention can be used to package various high power electronic chips, such as wavelength conversion chips and the like. For purposes of illustration only, wavelength conversion chips are described herein as an example. At this time, solder paste is used as an example of the bonding material.
本发明的基板1包括基板本体11、第一凹槽结构12和第二凹槽结构13。The substrate 1 of the present invention includes a substrate body 11, a first groove structure 12, and a second groove structure 13.
如图2所示,例如,方形的基板1可以由铜板原料冲压或者切割而成,其中,铜板原料的厚度可以为2mm~10mm,优选为3mm。铜基板1的平面尺寸可以为20mm*20mm。基板1的材料可以选用热导率为300w/m·k以上的纯铜或者铜合金,优选热导率为398w/m·k的铜材料。一般地,为了防止分子扩散和/或提高抗腐蚀性能等,对铜基板进行镀镍处理。As shown in FIG. 2, for example, the square substrate 1 may be formed by punching or cutting a copper plate material, wherein the copper plate material may have a thickness of 2 mm to 10 mm, preferably 3 mm. The planar size of the copper substrate 1 may be 20 mm * 20 mm. As the material of the substrate 1, a pure copper or a copper alloy having a thermal conductivity of 300 w/m·k or more may be used, and a copper material having a thermal conductivity of 398 w/m·k is preferable. Generally, in order to prevent molecular diffusion and/or improve corrosion resistance and the like, the copper substrate is subjected to nickel plating treatment.
第一凹槽结构12和第二凹槽结构13通过诸如激光刻蚀、化学刻蚀或者机械加工等工艺形成在基板本体11的用于接合波长转换芯片3的接合表面上。在本示例中,波长转换芯片3可以是诸如波长转换芯片之类的电子芯片。The first groove structure 12 and the second groove structure 13 are formed on the bonding surface of the substrate body 11 for bonding the wavelength conversion chip 3 by a process such as laser etching, chemical etching, or machining. In the present example, the wavelength conversion chip 3 may be an electronic chip such as a wavelength conversion chip.
第一凹槽结构12用于在平面方向上定位波长转换芯片3并在垂直方向上支撑波长转换芯片3。在电子芯片领域中,出于成本和工艺简化的考虑,作为波长转换芯片3的电子芯片的形状一般为正方形,但也不排除长方形、三角形、六边形、圆形等各种形状。为了实现对波长转换芯片3的定位和支撑,第一凹槽结构12的平面形状(即,在图3中的形状)应当对应于波长转换芯片的形状。具体地,第一凹槽结构12的开口尺寸必须等于波长转换芯片的尺寸。The first groove structure 12 is for positioning the wavelength conversion chip 3 in the planar direction and supporting the wavelength conversion chip 3 in the vertical direction. In the field of electronic chips, the shape of the electronic chip as the wavelength conversion chip 3 is generally square in view of cost and process simplification, but various shapes such as a rectangle, a triangle, a hexagon, and a circle are not excluded. In order to achieve positioning and support of the wavelength conversion chip 3, the planar shape of the first groove structure 12 (i.e., the shape in Fig. 3) should correspond to the shape of the wavelength conversion chip. Specifically, the opening size of the first groove structure 12 must be equal to the size of the wavelength conversion chip.
仅出于说明的目的,在此示例中,如图3所示,第一凹槽结构12的平面形状为正方形。在此情况下,波长转换芯片3应当同样具有正方形形状。在图3中,第一凹槽结构12的宽度(边长)由W0表示,其中,W0应满足W0=波长转换芯片的宽度(边长),由此第一凹槽结构12能够在平面方向上定位波长转换芯片。这里,例如,W0=5mm。For purposes of illustration only, in this example, as shown in FIG. 3, the planar shape of the first groove structure 12 is square. In this case, the wavelength conversion chip 3 should also have a square shape. In FIG. 3, the width (side length) of the first groove structure 12 is represented by W0, wherein W0 should satisfy W0 = the width (side length) of the wavelength conversion chip, whereby the first groove structure 12 can be in the planar direction Position the wavelength conversion chip. Here, for example, W0 = 5 mm.
第二凹槽结构13是进一步形成在第一凹槽结构12中的凹槽结构,并具有深度H2(参见图8)。第二凹槽结构13是用于在回流焊接工艺过程中允许焊锡膏2自由流动的空间。The second groove structure 13 is a groove structure further formed in the first groove structure 12 and has a depth H2 (see FIG. 8). The second groove structure 13 is a space for allowing the solder paste 2 to freely flow during the reflow soldering process.
在本示例中,如图2和图8所示,第一凹槽结构12仅在沿周边的四个角部处具有小于深度H2的深度H1。也就是说,在第一凹槽结构12中,第二凹槽结构13的形成位置是除四个角部之外的其它位置。由此,第一凹槽结构12沿周边具有能够用于在垂直方向上支撑波长转换芯片3的四个角部支撑位置。In the present example, as shown in FIGS. 2 and 8, the first groove structure 12 has a depth H1 smaller than the depth H2 only at the four corners along the circumference. That is, in the first groove structure 12, the formation position of the second groove structure 13 is a position other than the four corners. Thereby, the first groove structure 12 has four corner support positions which can be used to support the wavelength conversion chip 3 in the vertical direction along the periphery.
另外,在非必要但优选的特征中,为了在接合材料3超过规定量的情况下在回流焊接工艺过程中允许多余的接合材料的自由流动,第二凹槽结构13还可以进一步从第一凹槽结构12的四个边在四个方向上向外延伸到第一凹槽结构12的外部。换句话说,第二凹槽结构13还从第一凹槽结构12的位于四个角部支撑位置之间的周边向外延伸到第一凹槽结构12的外部。Further, in an optional but preferred feature, in order to allow free flow of excess bonding material during the reflow soldering process with the bonding material 3 exceeding a prescribed amount, the second groove structure 13 may further be from the first recess The four sides of the slot structure 12 extend outwardly into the exterior of the first groove structure 12 in four directions. In other words, the second groove structure 13 also extends outwardly from the periphery of the first groove structure 12 between the four corner support locations to the exterior of the first groove structure 12.
由此,与第二凹槽结构13没有延伸到第一凹槽结构12外部的情况相比,通过使第二凹槽结构13延伸到第一凹槽结构12的外部,能够进一步获得在回流焊接工艺过程中允许多余的结合材料自由流动的作用和效果。Thereby, by re-welding the second groove structure 13 to the outside of the first groove structure 12, as compared with the case where the second groove structure 13 does not extend to the outside of the first groove structure 12. The effect and effect of free flow of excess bonding material during the process.
然而,对于本领域技术人员来说,应当理解的是,虽然在本发明的所有附图中将第二凹槽结构13示出为具有延伸到第一凹槽结构12外部的部分,但第二凹槽结构13并不一定必须向外延伸。在生产工艺能够确保适量的接合材料的前提下,没有向外延伸的第二凹槽结构就足以在回流焊接工艺过程中允许接合材料的自由流动。在这种情况下,第二凹槽结构13仅形成在第一凹槽结构12中。在第一凹槽结构12的四个边处,第二凹槽结构13与第一凹槽结构12齐平。这同样适用于后文描述的示例。However, it will be understood by those skilled in the art that although the second groove structure 13 is shown as having a portion extending outside the first groove structure 12 in all of the drawings of the present invention, the second The groove structure 13 does not necessarily have to extend outward. Under the premise that the production process can ensure an appropriate amount of bonding material, the second groove structure without outward extension is sufficient to allow free flow of the bonding material during the reflow soldering process. In this case, the second groove structure 13 is formed only in the first groove structure 12. At the four sides of the first groove structure 12, the second groove structure 13 is flush with the first groove structure 12. The same applies to the examples described later.
尽管如此,在本示例中,如图2至8所示,将第二凹槽结构13延伸到第一凹槽结构12外部的情况作为示例进行了具体说明。Nevertheless, in the present example, as shown in FIGS. 2 to 8, the case where the second groove structure 13 is extended to the outside of the first groove structure 12 is specifically explained as an example.
由此,在第二凹槽结构13延伸到第一凹槽结构12外部的情况下,第二凹槽结构13由形成在第一凹槽结构12中的部分和形成在第一凹槽结构12外部的部分组成,并因而具有十字形的平面形状。Thus, in the case where the second groove structure 13 extends to the outside of the first groove structure 12, the second groove structure 13 is formed by the portion formed in the first groove structure 12 and formed in the first groove structure 12 The outer part is composed and thus has a cross-shaped planar shape.
如图3所示,第二凹槽结构13具有长度W1和宽度W2。由于第二 凹槽结构13形成在第一凹槽结构12中的除四个角部支撑位置之外的位置,所以如图5所示,第二凹槽结构13的宽度W2应当小于第一凹槽结构12的宽度W0。而且,由于第二凹槽结构13从第一凹槽结构12的位于四个角部支撑位置之间的周边外延伸到第一凹槽结构12的外部,所以如图4所示,第二凹槽结构13的长度W1应当大于第一凹槽结构12的宽度W0。这里,例如,W0和W2的差值可以为1mm至2mm,优选为1mm。例如,W1和W0的差值可以为3mm至15mm,优选为5mm。As shown in FIG. 3, the second groove structure 13 has a length W1 and a width W2. Since the second groove structure 13 is formed at a position other than the four corner support positions in the first groove structure 12, as shown in FIG. 5, the width W2 of the second groove structure 13 should be smaller than the first recess. The width W0 of the groove structure 12. Moreover, since the second groove structure 13 extends from the periphery of the first groove structure 12 between the four corner support positions to the outside of the first groove structure 12, as shown in FIG. The length W1 of the groove structure 13 should be greater than the width W0 of the first groove structure 12. Here, for example, the difference between W0 and W2 may be 1 mm to 2 mm, preferably 1 mm. For example, the difference between W1 and W0 may be from 3 mm to 15 mm, preferably 5 mm.
图6至图8示出了利用根据本发明的第一示例的基板形成的封装结构的状态。下面将参考图6至图8说明利用根据本发明的基板形成封装结构的过程及由此形成的封装结构。6 to 8 illustrate a state of a package structure formed using a substrate according to a first example of the present invention. A process of forming a package structure using the substrate according to the present invention and a package structure formed thereby will be described below with reference to FIGS. 6 to 8.
在将波长转换芯片3焊接至基板1之前,例如采用钢网印刷方法将焊锡膏2印刷在波长转换芯片3的接合表面(例如,金属化表面)上。然后,以使波长转换芯片3的印刷有焊锡膏的接合表面面对基板1的方式,将波长转换芯片3贴装在第一凹槽结构12处。此后,在波长转换芯片3上放置配重块。然后,将此时获得的包括基板、波长转换芯片和配重块的组合体放置到真空回流炉中,按照设定好的温度、压力曲线进行焊接。此时,接合材料在基板的第二凹槽结构13中能够自由流动。最后,在焊接完成后,移除配重块。此时,获得了图6所示的封装结构。Before the wavelength conversion chip 3 is soldered to the substrate 1, the solder paste 2 is printed on the bonding surface (for example, the metalized surface) of the wavelength conversion chip 3, for example, by a stencil printing method. Then, the wavelength conversion chip 3 is attached to the first groove structure 12 in such a manner that the bonding surface of the wavelength conversion chip 3 on which the solder paste is printed faces the substrate 1. Thereafter, a weight is placed on the wavelength conversion chip 3. Then, the assembly including the substrate, the wavelength conversion chip, and the weight block obtained at this time was placed in a vacuum reflow furnace, and welding was performed in accordance with the set temperature and pressure curves. At this time, the bonding material is free to flow in the second groove structure 13 of the substrate. Finally, after the welding is completed, the weights are removed. At this time, the package structure shown in FIG. 6 is obtained.
当然,应当理解,封装结构的形成及封装结构也可以利用下文描述的其它示例的基板。Of course, it should be understood that the formation of the package structure and the package structure may also utilize substrates of other examples described below.
如图6所示,第一凹槽结构12的深度H1要等于或小于芯片3的厚度H0。这里,例如,芯片3的厚度H0=300μm。例如,H0和H1的差值可以为0~100μm,优选50μm。As shown in FIG. 6, the depth H1 of the first groove structure 12 is equal to or smaller than the thickness H0 of the chip 3. Here, for example, the thickness of the chip 3 is H0 = 300 μm. For example, the difference between H0 and H1 may be 0 to 100 μm, preferably 50 μm.
例如,第二凹槽结构13的深度H2要大于芯片3的厚度H0。从图9可以看出,焊锡膏2的厚度为H2-H1,其值为100~300μm,优选150μm。For example, the depth H2 of the second groove structure 13 is greater than the thickness H0 of the chip 3. As can be seen from Fig. 9, the solder paste 2 has a thickness of H2-H1 and a value of 100 to 300 μm, preferably 150 μm.
根据本示例,由于第一凹槽结构12的开口尺寸完全对应于芯片3的尺寸,所以第一凹槽结构能够在平面方向上精确地定位芯片3在基板1中的位置。即使在回流焊接工艺过程中,芯片3仍不会由于焊锡膏2的流动性和不可控性而在平面方向上发生漂移。According to the present example, since the opening size of the first groove structure 12 completely corresponds to the size of the chip 3, the first groove structure can accurately position the chip 3 in the substrate 1 in the planar direction. Even during the reflow soldering process, the chip 3 does not drift in the planar direction due to the fluidity and uncontrollability of the solder paste 2.
另外,根据本示例,由于第一凹槽结构12的四个角部支撑位置的深度H1小于第二凹槽结构13的深度H2,所以第一凹槽结构12能够在垂直方向上支撑芯片3,由此在回流焊接工艺过程中,芯片3不会发生任何歪斜。In addition, according to the present example, since the depth H1 of the four corner support positions of the first groove structure 12 is smaller than the depth H2 of the second groove structure 13, the first groove structure 12 can support the chip 3 in the vertical direction, Thus, the chip 3 does not undergo any skew during the reflow soldering process.
此外,根据本示例,由于第二凹槽结构13形成在第一凹槽结构12中并具有大于第一凹槽结构12的深度的深度,因此在回流焊接工艺过程中,焊锡膏2能够自由地流动,从而提高了芯片3与基板1之间的焊锡膏2的厚度的一致性。另外,可选地,由于第二凹槽结构13可以进一步具有延伸到第一凹槽结构12外部的部分,因此在回流焊接工艺过程中,即使焊锡膏2超过规定量,仍能够在第二凹槽结构13中自由地流动,从而提高了芯片3与基板1之间的焊锡膏2的厚度的一致性。Further, according to the present example, since the second groove structure 13 is formed in the first groove structure 12 and has a depth greater than the depth of the first groove structure 12, the solder paste 2 can be freely performed during the reflow soldering process Flowing, thereby improving the uniformity of the thickness of the solder paste 2 between the chip 3 and the substrate 1. In addition, alternatively, since the second groove structure 13 may further have a portion extending to the outside of the first groove structure 12, even if the solder paste 2 exceeds a prescribed amount during the reflow soldering process, the second recess can be The groove structure 13 flows freely, thereby improving the uniformity of the thickness of the solder paste 2 between the chip 3 and the substrate 1.
在第一示例中,第二凹槽结构从第一凹槽结构的位于多个支撑位置之间的周边向外延伸。然而,第二凹槽结构也可以从第一凹槽结构的位于多个支撑位置之间的周边的一部分向外延伸。下面,通过列举变形示例1至3来说明这种情况。In a first example, the second groove structure extends outwardly from a perimeter of the first groove structure between the plurality of support locations. However, the second groove structure may also extend outwardly from a portion of the perimeter of the first groove structure between the plurality of support locations. Hereinafter, this case will be explained by enumerating the modification examples 1 to 3.
<第一示例的变形示例1><Modification Example 1 of First Example>
图9示出了根据变形示例1的基板的立体图。FIG. 9 shows a perspective view of a substrate according to Modification Example 1.
在第一示例中,第二凹槽结构13从第一凹槽结构12的四个边向外延伸到第一凹槽结构12的外部。然而,如图9所示,在变形示例1中,第二凹槽结构13从第一凹槽结构12的三个边向外延伸到第一凹槽结构12的外部,但没有从第一凹槽结构12的其余一个边(在本示例中,上侧边)向外延伸。In the first example, the second groove structure 13 extends outward from the four sides of the first groove structure 12 to the outside of the first groove structure 12. However, as shown in FIG. 9, in the modification example 1, the second groove structure 13 extends outward from the three sides of the first groove structure 12 to the outside of the first groove structure 12, but not from the first concave The remaining one of the slots 12 (in this example, the upper side) extends outwardly.
从图9可以看出,在上侧边处,第一凹槽结构12和第二凹槽结构13齐平。As can be seen from Figure 9, at the upper side, the first groove structure 12 and the second groove structure 13 are flush.
根据本变形示例的基板也可以获得与第一示例相同的作用和效果。The same effects and effects as those of the first example can also be obtained with the substrate according to the present modification example.
<第一示例的变形示例2><Modification Example 2 of First Example>
图10和图11示出了根据变形示例2的基板的立体图。10 and 11 show perspective views of a substrate according to a modification example 2.
在第一示例中,第二凹槽结构13从第一凹槽结构12的四个边向外 延伸到第一凹槽结构12的外部。然而,如图10和11所示,在变形示例2中,第二凹槽结构13从第一凹槽结构12的两个对边或相邻边向外延伸到第一凹槽结构12的外部,但没有从第一凹槽结构12的其余的两个对边(在本示例中,图10的上侧边和下侧边)或相邻边(在本示例中,图11的下侧边和右侧边)向外延伸。In the first example, the second groove structure 13 extends outward from the four sides of the first groove structure 12 to the outside of the first groove structure 12. However, as shown in FIGS. 10 and 11, in the modification example 2, the second groove structure 13 extends outward from the two opposite or adjacent sides of the first groove structure 12 to the outside of the first groove structure 12. But without the remaining two opposite sides of the first groove structure 12 (in this example, the upper and lower sides of Figure 10) or adjacent sides (in this example, the lower side of Figure 11 And the right side) extends outward.
从图10可以看出,在上侧边和下侧边处,第一凹槽结构12和第二凹槽结构13齐平。从图11可以看出,在下侧边和右侧边处,第一凹槽结构12和第二凹槽结构13齐平。As can be seen from Figure 10, at the upper and lower sides, the first groove structure 12 and the second groove structure 13 are flush. As can be seen from Figure 11, at the lower and right sides, the first groove structure 12 and the second groove structure 13 are flush.
根据本变形示例的基板也可以获得与第一示例相同的作用和效果。The same effects and effects as those of the first example can also be obtained with the substrate according to the present modification example.
<第一示例的变形示例3><Modification Example 3 of First Example>
图12示出了根据变形示例1的基板的立体图。FIG. 12 shows a perspective view of a substrate according to Modification Example 1.
在第一示例中,第二凹槽结构13从第一凹槽结构12的四个边向外延伸到第一凹槽结构12的外部。然而,如图12所示,在变形示例3中,第二凹槽结构13从第一凹槽结构12的一个边向外延伸到第一凹槽结构12的外部,但没有从第一凹槽结构12的其余三个边(在本示例中,上侧边、下侧边和左侧边)向外延伸。In the first example, the second groove structure 13 extends outward from the four sides of the first groove structure 12 to the outside of the first groove structure 12. However, as shown in FIG. 12, in the modification example 3, the second groove structure 13 extends outward from one side of the first groove structure 12 to the outside of the first groove structure 12, but without the first groove The remaining three sides of structure 12 (in this example, the upper side, the lower side, and the left side) extend outward.
从图12可以看出,在上侧边、下侧边和左侧边处,第一凹槽结构12和第二凹槽结构13齐平。As can be seen from Figure 12, at the upper, lower and left sides, the first groove structure 12 and the second groove structure 13 are flush.
根据本变形示例的基板也可以获得与第一示例相同的作用和效果。The same effects and effects as those of the first example can also be obtained with the substrate according to the present modification example.
<第一示例的其它变形示例><Other Modified Examples of First Example>
在上面的第一示例及其变形示例1至3中,多个支撑位置设置在第一凹槽结构的沿周边的四个角部处。然而,只要这些支撑位置能够在垂直方向上支撑芯片,这些支撑位置的数量可以更多或更少,且设置位置可以不限于角部位置。例如,也可以在第一凹槽结构的任意边的中心部分设置支撑位置,并且/或者可以省略该边的一个或两个相应角部处的支撑位置。In the above first example and its modification examples 1 to 3, a plurality of support positions are provided at the four corners of the periphery of the first groove structure. However, as long as these support positions can support the chip in the vertical direction, the number of these support positions can be more or less, and the set position can be not limited to the corner position. For example, it is also possible to provide a support position at a central portion of any side of the first groove structure and/or to omit a support position at one or two respective corners of the side.
另外,在上面的第一示例及其变形示例1至3中,第一凹槽结构具有正方形的平面形状。然而,由于芯片还可能具有不同于正方形的其它 形状,所以第一凹槽结构也可以是不同于正方形的其它形状,例如长方形、三角形、六边形、圆形等。在此情况下,一般性地,多个支撑位置可以沿第一凹槽结构的周边适当地设置,以能够在垂直方向上支撑芯片。另外,类似于第一示例及其变形示例1至3,第二凹槽结构也可以从第一凹槽结构的位于多个支撑位置之间的周边的至少一部分向外延伸。In addition, in the above first example and its modification examples 1 to 3, the first groove structure has a square planar shape. However, since the chip may also have other shapes than squares, the first groove structure may also be other shapes than squares, such as rectangles, triangles, hexagons, circles, and the like. In this case, generally, a plurality of support positions may be appropriately disposed along the circumference of the first groove structure to be capable of supporting the chip in the vertical direction. In addition, similar to the first example and its modified examples 1 to 3, the second groove structure may also extend outward from at least a portion of the periphery of the first groove structure between the plurality of support positions.
基板的第二示例Second example of substrate
图13示出了根据本发明的第二示例的基板。第二示例是对第一示例的改进。Figure 13 shows a substrate in accordance with a second example of the present invention. The second example is an improvement to the first example.
如图13所示,在第二凹槽结构13中进一步设置有用于传导来自芯片3的热量的高热导率导热台5,以用于提高封装结构的热性能。除此之外,根据第二示例的基板的其它构造可以采用第一示例及其变形例的构造。As shown in FIG. 13, a high thermal conductivity heat conduction stage 5 for conducting heat from the chip 3 is further provided in the second groove structure 13 for improving the thermal performance of the package structure. In addition to this, other configurations of the substrate according to the second example may adopt configurations of the first example and its modifications.
例如,导热台5可以是在基板1中形成第二凹槽结构13时有意保留的一部分材料。此时,导热台5的材料与基板的材料相同。由于铜的热导率比锡的热导率高7~8倍,所以通过形成高热导率导热台5,能够提高导热性能。For example, the thermal pad 5 may be a portion of the material that is intentionally retained when the second groove structure 13 is formed in the substrate 1. At this time, the material of the heat transfer stage 5 is the same as that of the substrate. Since the thermal conductivity of copper is 7 to 8 times higher than that of tin, the thermal conductivity can be improved by forming the high thermal conductivity thermal conduction stage 5.
导热台5的上表面至多与第一凹槽结构12的底部平齐,即在高度上不超过凹槽结构12的底部。导热台5形成在波长转换芯片的发热位置的下方,即形成在用于接收和转换激发光的区域的下方。另外,导热台5的上表面的形状对应于激发光的光斑形状,且可以是正方形、长方形、圆形等任意形状。此外,导热台5的上表面面积要稍大于波长转换芯片的接收激发光的区域的面积。The upper surface of the heat conducting stage 5 is at most flush with the bottom of the first groove structure 12, i.e., does not exceed the bottom of the groove structure 12 in height. The heat transfer stage 5 is formed below the heat generating position of the wavelength conversion chip, that is, below the area for receiving and converting the excitation light. Further, the shape of the upper surface of the heat transfer stage 5 corresponds to the spot shape of the excitation light, and may be any shape such as a square, a rectangle, or a circle. Further, the area of the upper surface of the heat transfer stage 5 is slightly larger than the area of the area of the wavelength conversion chip that receives the excitation light.
在回流焊接工艺过程中,在真空环境及毛细作用力下,导热台5与波长转换芯片3之间形成一层非常薄的焊锡膏。此时,并未降低波长转换装置的强度,但减薄了光斑处的焊锡膏的厚度,从而大大降低了焊锡膏的热阻。During the reflow soldering process, a very thin solder paste is formed between the thermal pad 5 and the wavelength conversion chip 3 under vacuum and capillary forces. At this time, the strength of the wavelength conversion device is not lowered, but the thickness of the solder paste at the spot is reduced, thereby greatly reducing the thermal resistance of the solder paste.
除了上述效果之外,根据第二示例的基板还可以获得与第一示例及其变形示例相同的作用和效果。In addition to the above effects, the substrate according to the second example can also obtain the same actions and effects as the first example and its modified example.
尽管在上面已经参照附图说明了本发明的实施例,但是本发明不限 于此,且本领域技术人员应理解,在不偏离本发明随附权利要求书限定的精神或范围的情况下,可以做出各种改变、组合、次组合以及变型。Although the embodiments of the present invention have been described above with reference to the drawings, the present invention is not limited thereto, and those skilled in the art will understand that the present invention may be practiced without departing from the spirit or scope of the appended claims. Make various changes, combinations, sub-combinations, and variants.

Claims (15)

  1. 一种基板,其包括:A substrate comprising:
    基板本体,所述基板本体具有利用接合材料来接合被接合部件的接合面;a substrate body having a bonding surface for bonding the bonded member with a bonding material;
    第一凹槽结构,所述第一凹槽结构形成在所述接合面中,并具有等于所述被接合部件的尺寸的开口尺寸以能够在所述接合面的平面方向上定位所述被接合部件;及a first groove structure formed in the joint surface and having an opening size equal to a size of the joined member to enable positioning of the engaged in a planar direction of the joint surface Parts; and
    第二凹槽结构,所述第二凹槽结构用于容纳所述接合材料,所述第二凹槽结构形成在所述第一凹槽结构中并具有第二深度,使得所述第一凹槽结构仅在沿周边的能够在垂直方向上支撑所述被接合部件的多个支撑位置处具有小于所述第二深度的第一深度。a second groove structure for accommodating the bonding material, the second groove structure being formed in the first groove structure and having a second depth such that the first concave The groove structure has a first depth smaller than the second depth only at a plurality of support positions along the periphery capable of supporting the joined member in the vertical direction.
  2. 根据权利要求1所述的基板,其中,所述第二凹槽结构进一步从位于所述多个支撑位置之间的所述周边的至少一部分延伸到所述第一凹槽结构的外部。The substrate of claim 1 wherein the second groove structure further extends from at least a portion of the perimeter between the plurality of support locations to an exterior of the first groove structure.
  3. 根据权利要求1或2所述的基板,其中,所述第一深度等于或小于所述被接合部件的厚度。The substrate according to claim 1 or 2, wherein the first depth is equal to or smaller than a thickness of the joined member.
  4. 根据权利要求1所述的基板,其中,所述第一凹槽结构具有正方形平面形状。The substrate according to claim 1, wherein the first groove structure has a square planar shape.
  5. 根据权利要求4所述的基板,其中,所述多个支撑位置是所述第一凹槽结构的四个角部处的位置。The substrate according to claim 4, wherein the plurality of support positions are positions at four corners of the first groove structure.
  6. 根据权利要求2所述的基板,其中,所述第一凹槽结构具有正方形平面形状,所述多个支撑位置是所述第一凹槽结构的四个角部处的位置,且所述第二凹槽结构从所述第一凹槽结构的至少一个边延伸到所述第一凹槽结构的外部。The substrate according to claim 2, wherein the first groove structure has a square planar shape, the plurality of support positions are positions at four corners of the first groove structure, and the A two groove structure extends from at least one side of the first groove structure to an exterior of the first groove structure.
  7. 根据权利要求6所述的基板,其中,所述第二凹槽结构从所述第一凹槽结构的四个边延伸到所述第一凹槽结构的外部,并具有十字形平面形状。The substrate according to claim 6, wherein the second groove structure extends from four sides of the first groove structure to an outside of the first groove structure and has a cross-shaped planar shape.
  8. 根据权利要求7所述的基板,其中,所述第二凹槽结构的宽度小于所述第一凹槽结构的宽度,且所述第二凹槽结构的长度大于所述第一凹槽结构的宽度。The substrate according to claim 7, wherein a width of the second groove structure is smaller than a width of the first groove structure, and a length of the second groove structure is larger than a length of the first groove structure width.
  9. 根据权利要求1或2所述的基板,其中,在所述第二凹槽结构的内部设置有用于传导来自所述被接合部件的热量的导热台,所述导热台的顶表面至多与所述第一凹槽结构的底部齐平。The substrate according to claim 1 or 2, wherein a heat transfer station for conducting heat from the joined member is disposed inside the second groove structure, and a top surface of the heat transfer station is at most The bottom of the first groove structure is flush.
  10. 根据权利要求9所述的基板,其中,所述导热台的位置对应于所述被接合部件的发热位置。The substrate according to claim 9, wherein the position of the heat transfer stage corresponds to a heat generating position of the joined member.
  11. 根据权利要求10所述的基板,其中,所述导热台的平面形状为正方形、长方形和圆形中的一者。The substrate according to claim 10, wherein the planar shape of the heat transfer stage is one of a square, a rectangle, and a circle.
  12. 根据权利要求1或2所述的基板,其中,所述被接合部件为波长转换芯片。The substrate according to claim 1 or 2, wherein the member to be joined is a wavelength conversion chip.
  13. 根据权利要求1或2所述的基板,其中,所述接合材料为焊锡膏。The substrate according to claim 1 or 2, wherein the bonding material is a solder paste.
  14. 一种利用根据权利要求1至13中任一项所述的基板形成封装结构的方法,所述方法包括:A method of forming a package structure using the substrate according to any one of claims 1 to 13, the method comprising:
    提供所述基板;Providing the substrate;
    将接合材料印刷至被接合部件的接合表面;Printing the bonding material to the bonding surface of the joined component;
    以使所述被接合部件的接合表面面向所述基板的方式,将所述被接合部件贴装在所述基板的所述第一凹槽结构处;Mounting the joined component at the first groove structure of the substrate in such a manner that the bonding surface of the joined component faces the substrate;
    在所述被接合部件上放置配重块;Placing a weight on the engaged component;
    将此时获得的包括所述基板、所述被接合部件和所述配重块的组合体放置在真空共晶炉中进行焊接,以允许所述接合材料在所述基板的所述第二凹槽结构中自由流动;且The assembly including the substrate, the joined member, and the weight obtained at this time is placed in a vacuum eutectic furnace for welding to allow the bonding material to be in the second concave of the substrate Free flow in the groove structure;
    在焊接完成后,移除所述配重块。After the welding is completed, the weight is removed.
  15. 一种封装结构,所述封装结构包括:A package structure, the package structure comprising:
    根据权利要求1至13中任一项所述的基板;The substrate according to any one of claims 1 to 13;
    被接合部件;以及Jointed component;
    接合材料,所述接合材料用于将所述被接合部件接合至所述基板的所述接合面上。A bonding material for bonding the joined component to the bonding surface of the substrate.
PCT/CN2018/080876 2018-01-05 2018-03-28 Substrate, method for forming package structure by using substrate, and package structure WO2019134268A1 (en)

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