JP2009044494A - Imaging device - Google Patents

Imaging device Download PDF

Info

Publication number
JP2009044494A
JP2009044494A JP2007207660A JP2007207660A JP2009044494A JP 2009044494 A JP2009044494 A JP 2009044494A JP 2007207660 A JP2007207660 A JP 2007207660A JP 2007207660 A JP2007207660 A JP 2007207660A JP 2009044494 A JP2009044494 A JP 2009044494A
Authority
JP
Japan
Prior art keywords
imaging device
package substrate
solid
transparent cover
state imaging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007207660A
Other languages
Japanese (ja)
Inventor
Katsuhiro Sasaki
勝弘 佐々木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2007207660A priority Critical patent/JP2009044494A/en
Publication of JP2009044494A publication Critical patent/JP2009044494A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Landscapes

  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide an imaging device excellent in heat radiation, in which a solid imaging device is positioned with high accuracy. <P>SOLUTION: The imaging device 2 includes: the solid imaging device 3; a metal package substrate 4; and a transparent cover 5. The package substrate 4 is flat. The transparent cover 5 is of a box shape in which an opening is formed on a bottom surface. A groove 4a for pouring an adhesive for bonding the solid imaging device 3 is formed on the upper surface of the package substrate 4. An area of the upper surface of the package substrate 4 in which the groove 4a is not formed is a positioning part 4b for abutting on the bottom surface of the solid imaging device 3. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、パッケージ基板に固体撮像素子が固着された撮像デバイスに関する。   The present invention relates to an imaging device in which a solid-state imaging element is fixed to a package substrate.

デジタルカメラやカメラ付き携帯電話機などの撮影機器には、半導体チップであるＣＣＤイメージセンサなどの固体撮像素子をパッケージ化した撮像デバイスが搭載されている。撮像デバイスは、固体撮像素子と、この固体撮像素子が固着されるパッケージ基板と、固体撮像素子の撮像面を覆うようにしてパッケージ基板に取り付けられる透明カバーとから構成されている。撮像デバイスのパッケージ基板には、セラミック製のものを用いるのが一般的である。   Imaging devices such as digital cameras and camera-equipped mobile phones are equipped with an imaging device in which a solid-state imaging device such as a CCD image sensor that is a semiconductor chip is packaged. The imaging device includes a solid-state imaging device, a package substrate to which the solid-state imaging device is fixed, and a transparent cover attached to the package substrate so as to cover the imaging surface of the solid-state imaging device. A ceramic substrate is generally used for the package substrate of the imaging device.

ところで、撮像デバイスは高性能化及び小型化が進められているが、これに伴って固体撮像素子の熱が蓄積しやすくなることから、撮像デバイスの放熱性を向上させることが要求されている。特許文献１には、固体撮像素子をケース状に形成されたセラミックベースに固着し、このセラミックベースを金属製の基板に取り付ける技術が記載されている。固体撮像素子の熱はセラミックベースを介して金属板に逃げる構成になっている。
特開平８−２３７５５４号公報 By the way, although the performance and miniaturization of the imaging device are being promoted, the heat of the solid-state imaging device is easily accumulated along with this, so that it is required to improve the heat dissipation of the imaging device. Patent Document 1 describes a technique in which a solid-state imaging device is fixed to a ceramic base formed in a case shape, and the ceramic base is attached to a metal substrate. The heat of the solid-state image sensor escapes to the metal plate via the ceramic base.
JP-A-8-237554

しかしながら、特許文献１記載の技術のように、セラミックベースに固体撮像素子を固着する場合（セラミック製のパッケージ基板に固体撮像素子を固着する場合）には、セラミックベースの平坦度が個々にばらつくことから、固体撮像素子を精度良く位置決めすること（いわゆるアオリ精度を高く保つこと）が難しいという問題があった。また、固体撮像素子の位置決め作業に手間がかかるという問題があった。通常、セラミック製のパッケージ基板はシート状のセラミック板を積層して成型し焼成して製造するので、熱収縮などで変形し、ベースの平坦度が個々にばらつくという問題があり、このベースの平坦度のばらつきを改善するために機械切削技術を用いて対処することができるものの、この場合には製造コストが上昇するという問題が生じる。   However, as in the technique described in Patent Document 1, when the solid-state image sensor is fixed to the ceramic base (when the solid-state image sensor is fixed to the ceramic package substrate), the flatness of the ceramic base varies individually. Therefore, there is a problem that it is difficult to position the solid-state image pickup device with high accuracy (maintaining so-called tilt accuracy is high). Further, there is a problem that it takes time to position the solid-state imaging device. Usually, a ceramic package substrate is manufactured by laminating and firing sheet-shaped ceramic plates, so there is a problem that the flatness of the base varies due to deformation due to heat shrinkage, etc. Although this can be dealt with using a mechanical cutting technique in order to improve the variation in the degree, in this case, there arises a problem that the manufacturing cost increases.

本発明は、固体撮像素子が高精度に位置決めできるとともに放熱性に優れた撮像デバイスを提供することを目的とする。   An object of the present invention is to provide an imaging device in which a solid-state imaging element can be positioned with high accuracy and excellent in heat dissipation.

本発明の撮像デバイスは、金属製のパッケージ基板と、前記パッケージ基板の上面に固着された固体撮像素子と、前記固体撮像素子の撮像面を覆うようにして、前記固体撮像素子を前記パッケージ基板との間で密封する透明カバーとからなることを特徴とする。   The imaging device of the present invention includes a metal package substrate, a solid-state image sensor fixed to the upper surface of the package substrate, and the solid-state image sensor and the package substrate so as to cover an imaging surface of the solid-state image sensor. It is characterized by comprising a transparent cover sealed between.

前記パッケージ基板は平板状に形成され、前記透明カバーは下面側に開口をもつ箱型に形成され、前記透明カバーの下部が前記パッケージ基板の上面に光硬化型接着剤を用いて接着することが好ましい。   The package substrate is formed in a flat plate shape, the transparent cover is formed in a box shape having an opening on the lower surface side, and a lower portion of the transparent cover is bonded to the upper surface of the package substrate using a photo-curing adhesive. preferable.

前記パッケージ基板の上面には前記固体撮像素子を固着するための接着剤を流し込む溝が形成され、前記上面のうち前記溝が形成されていない領域が、前記固体撮像素子を位置決めするために前記固体撮像素子の下面が当てられる位置決め部であることが好ましい。   A groove into which an adhesive for fixing the solid-state image sensor is poured is formed on the upper surface of the package substrate, and a region of the upper surface where the groove is not formed is used to position the solid-state image sensor. A positioning portion to which the lower surface of the image sensor is applied is preferable.

本発明の撮像デバイスによれば、金属製のパッケージ基板を用いることから、パッケージ基板の平坦度が高く保たれ、固体撮像素子が高精度に位置決めできる。また、固体撮像素子の熱が直接に金属製のパッケージ基板に伝わることから、撮像デバイスの放熱性を高くすることができる。   According to the imaging device of the present invention, since the metal package substrate is used, the flatness of the package substrate is kept high, and the solid-state imaging device can be positioned with high accuracy. In addition, since the heat of the solid-state imaging device is directly transmitted to the metal package substrate, the heat dissipation of the imaging device can be increased.

パッケージ基板を平板状に形成し、透明カバーを下面側に開口をもつ箱型に形成し、透明カバーをパッケージ基板に接着するときに光硬化型接着剤を用いる場合には、パッケージ基板の加工が簡単であり、また、撮像デバイスの組立て作業が簡単になる。   When the package substrate is formed in a flat plate shape, the transparent cover is formed in a box shape having an opening on the lower surface side, and a photo-curing adhesive is used when bonding the transparent cover to the package substrate, the processing of the package substrate is not possible. It is simple, and the assembly operation of the imaging device is simplified.

パッケージ基板の上面に溝を形成し、この上面のうち溝が形成されていない領域を位置決め部とすることにより、固体撮像素子の下面をパッケージ基板の位置決め部に当てて位置決めしつつ固体撮像素子を固着することが可能になり、固体撮像素子を高精度に位置決めできる。また、固体撮像素子の固着作業が簡単になる。   A groove is formed on the upper surface of the package substrate, and a region of the upper surface where no groove is formed is used as a positioning portion, so that the solid-state imaging device is positioned while positioning the lower surface of the solid-state imaging device against the positioning portion of the package substrate. The solid-state image sensor can be positioned with high accuracy. In addition, the fixing operation of the solid-state imaging device is simplified.

図１及び図２に示すように、撮像デバイス２は、矩形板状の半導体チップである固体撮像素子３と、この固体撮像素子３が固着されるパッケージ基板４と、固体撮像素子３を覆うようにして固体撮像素子３をパッケージ基板４との間で密封する透明カバー５とから構成される。   As shown in FIGS. 1 and 2, the imaging device 2 covers a solid-state imaging device 3 that is a rectangular plate-shaped semiconductor chip, a package substrate 4 to which the solid-state imaging device 3 is fixed, and the solid-state imaging device 3. And a transparent cover 5 that seals the solid-state imaging device 3 with the package substrate 4.

固体撮像素子３の上面中央部には撮像面６が形成されている。撮像面６は、マトリクス状に配置された多数個の受光素子によって構成されており、各受光素子の上には、ＲＧＢのカラーフィルタやマイクロレンズが積層されている。各受光素子に蓄積された電荷は電荷結合素子（ＣＣＤ）によって出力部まで搬送される。なお、固体撮像素子３にはＣＣＤイメージセンサの替わりに、ＣＭＯＳイメージセンサを用いてもよい。固体撮像素子３の撮像面６の側方には、電極パッド７が設けられている。   An imaging surface 6 is formed at the center of the upper surface of the solid-state imaging device 3. The imaging surface 6 is composed of a large number of light receiving elements arranged in a matrix, and RGB color filters and microlenses are stacked on each light receiving element. The electric charge accumulated in each light receiving element is conveyed to an output unit by a charge coupled device (CCD). Note that a CMOS image sensor may be used for the solid-state imaging device 3 instead of the CCD image sensor. An electrode pad 7 is provided on the side of the imaging surface 6 of the solid-state imaging device 3.

パッケージ基板４は平板状に形成されている。パッケージ基板４は金属製であり、金属の種類として例えばアルミニウムや銅などを用いる。パッケージ基板４の上面端部には絶縁層８が形成されており、この絶縁層８としては例えばシリコン酸化膜などを用いる。絶縁層８上にはリード端子９が設けられており、リード端子８は透明カバー５の外部にまで延ばされている。固体撮像素子３の電極パッド７とリード端子９とは、透明カバー５の内部で金属線１０を介して接続されている。リード端子９には例えばフレキシブル基板が接続され、このフレキシブル基板を介して固体撮像素子を制御する制御回路や固体撮像素子の出力信号を処理する信号処理回路などに接続される。   The package substrate 4 is formed in a flat plate shape. The package substrate 4 is made of metal, and for example, aluminum or copper is used as the metal type. An insulating layer 8 is formed on the upper end portion of the package substrate 4. As the insulating layer 8, for example, a silicon oxide film or the like is used. A lead terminal 9 is provided on the insulating layer 8, and the lead terminal 8 extends to the outside of the transparent cover 5. The electrode pad 7 and the lead terminal 9 of the solid-state imaging device 3 are connected through the metal wire 10 inside the transparent cover 5. For example, a flexible substrate is connected to the lead terminal 9 and connected to a control circuit for controlling the solid-state imaging device, a signal processing circuit for processing an output signal of the solid-state imaging device, and the like via the flexible substrate.

パッケージ基板４の上面中央部には略矩形状（または円形状）の浅い溝４ａ（図２参照）が形成されている。この溝４ａは固体撮像素子３を固着する接着剤１１を流し込むためのものである。接着剤１１には弾性率が高いものを用いる。パッケージ基板４の上面のうち溝４ａ及び絶縁層８が形成されていない領域（溝４ａと絶縁層８との間の領域）は、固体撮像素子３の下面が当てられて固体撮像素子３を位置決めするための位置決め部４ｂになっている。   A substantially rectangular (or circular) shallow groove 4 a (see FIG. 2) is formed at the center of the upper surface of the package substrate 4. The groove 4a is for pouring the adhesive 11 for fixing the solid-state imaging device 3. An adhesive 11 having a high elastic modulus is used. In the upper surface of the package substrate 4, the region where the groove 4 a and the insulating layer 8 are not formed (the region between the groove 4 a and the insulating layer 8) is applied with the lower surface of the solid-state image sensor 3 to position the solid-state image sensor 3. This is a positioning part 4b.

透明カバー５は、下面側に開口をもつ箱型形状である。透明カバー５は成形ガラス製であり、例えばレンズなどに用いられる光学ガラスを溶融して成形金型に射出して成形する。透明カバー５の表面にはＩＲカットフィルタをコーティングし、透明カバー５が赤外線を透過しないよう構成されている。なお、透明カバー５の材料にはガラスの替わりにプラスチックを用いてもよい。   The transparent cover 5 has a box shape having an opening on the lower surface side. The transparent cover 5 is made of molded glass. For example, optical glass used for a lens or the like is melted and injected into a molding die to be molded. The surface of the transparent cover 5 is coated with an IR cut filter so that the transparent cover 5 does not transmit infrared rays. The material of the transparent cover 5 may be plastic instead of glass.

透明カバー５は、光硬化型接着剤１２（図２参照）を介してパッケージ基板４に接着される。光硬化型接着剤１２としては、例えば紫外線の照射により硬化する紫外線硬化型接着剤を用いる。光硬化型接着剤１２には弾性率が高いものを用いる。透明カバー５の下端面が、パッケージ基板４の上面周部に接着される。透明カバー５は、固体撮像素子３の撮像面６を覆って保護する。   The transparent cover 5 is bonded to the package substrate 4 via a photocurable adhesive 12 (see FIG. 2). As the photocurable adhesive 12, for example, an ultraviolet curable adhesive that is cured by irradiation with ultraviolet rays is used. A photocurable adhesive 12 having a high elastic modulus is used. The lower end surface of the transparent cover 5 is bonded to the upper surface periphery of the package substrate 4. The transparent cover 5 covers and protects the imaging surface 6 of the solid-state imaging device 3.

以下では撮像デバイス２の製造工程について図３を用いて説明する。まず、図３（Ａ）に示すように、矩形状の金属製の基材を用意して、この基材の上面中央部を切削して溝４ａを形成してから、基材の上面両端部に絶縁層８を形成し、さらに絶縁層８上にリード端子９を形成して、パッケージ基板４とする。このパッケージ基板４は金属製であることから歪みが生じにくく、パッケージ基板４の位置決め部４ｂは平坦度が高く保たれる。パッケージ基板４の溝４ａには接着剤１１を流し込む。   Below, the manufacturing process of the imaging device 2 is demonstrated using FIG. First, as shown in FIG. 3A, a rectangular metal base material is prepared, the upper surface center portion of the base material is cut to form the groove 4a, and then both upper surface end portions of the base material are formed. An insulating layer 8 is formed on the insulating layer 8, and lead terminals 9 are formed on the insulating layer 8 to form the package substrate 4. Since the package substrate 4 is made of metal, distortion is not easily generated, and the positioning portion 4b of the package substrate 4 is kept high in flatness. An adhesive 11 is poured into the groove 4 a of the package substrate 4.

次に、図３（Ｂ）に示すように、固体撮像素子３の下面をパッケージ基板４の位置決め部４ｂに当てながら、固体撮像素子３を接着剤１１を介してパッケージ基板４に接着する。固体撮像素子３の下面をパッケージ基板４の位置決め部４ｂに直接に当てることにより、固体撮像素子３をパッケージ基板４に対して高精度に位置決めして固着することができる。   Next, as illustrated in FIG. 3B, the solid-state imaging device 3 is bonded to the package substrate 4 through the adhesive 11 while the lower surface of the solid-state imaging device 3 is applied to the positioning portion 4 b of the package substrate 4. By directly contacting the lower surface of the solid-state imaging device 3 to the positioning portion 4 b of the package substrate 4, the solid-state imaging device 3 can be positioned and fixed to the package substrate 4 with high accuracy.

固体撮像素子３をパッケージ基板４に固着した後、キャピラリ２０を用いてワイヤボンディングを行う。固体撮像素子３の電極パッド７（図１参照）とパッケージ基板４のリード端子９とを金属線１０により接続する。   After the solid-state imaging device 3 is fixed to the package substrate 4, wire bonding is performed using the capillary 20. An electrode pad 7 (see FIG. 1) of the solid-state imaging device 3 and a lead terminal 9 of the package substrate 4 are connected by a metal wire 10.

次に、図３（Ｃ）に示すように、透明カバー５の下端面を、光硬化型接着剤１２を介して、パッケージ基板４に接着する。透明カバー５を接着した後、光硬化型接着剤１２の硬化処理を行う。硬化処理は、紫外線を光硬化型接着剤１２へ照射する作業であり、紫外線は透明カバー５を透過して照射される。この硬化処理により、透明カバー５がパッケージ基板４に固定される。以上の工程により、撮像デバイス２が完成する。   Next, as shown in FIG. 3C, the lower end surface of the transparent cover 5 is bonded to the package substrate 4 via the photocurable adhesive 12. After the transparent cover 5 is bonded, the photocurable adhesive 12 is cured. The curing process is an operation of irradiating the photocurable adhesive 12 with ultraviolet rays, and the ultraviolet rays are irradiated through the transparent cover 5. The transparent cover 5 is fixed to the package substrate 4 by this curing process. The imaging device 2 is completed through the above steps.

本発明の撮像デバイス２によれば、金属製のパッケージ基板４を用いることから、パッケージ基板４の位置決め部４ｂは平坦度が高く保たれ、この位置決め部４ｂに直接に当接された固体撮像素子３は高精度に位置決めされる（いわゆるアオリ精度が高くなる）。また、固体撮像素子３の熱が直接に金属製のパッケージ基板４に伝わるから、撮像デバイス２の放熱性を非常に高くすることができる。さらに、透明カバー５を光硬化型接着剤１２を用いてパッケージ基板４に固着できるから、撮像デバイス２の組立て作業が簡単である。   According to the imaging device 2 of the present invention, since the metal package substrate 4 is used, the positioning portion 4b of the package substrate 4 is kept high in flatness, and is a solid-state imaging device that is in direct contact with the positioning portion 4b. 3 is positioned with high accuracy (so-called tilt accuracy is increased). Moreover, since the heat of the solid-state imaging device 3 is directly transmitted to the metal package substrate 4, the heat dissipation of the imaging device 2 can be made extremely high. Furthermore, since the transparent cover 5 can be fixed to the package substrate 4 using the photo-curing adhesive 12, the assembly operation of the imaging device 2 is simple.

上記実施形態では、パッケージ基板に平板状のものを用いたが、キャビティタイプのものを用いてもよい。図４に示すように、パッケージ基板１００は金属製であり、その中央部に固体撮像素子３が固着される略矩形状（または円形状）の凹部１０１を有する。凹部１０１の底面には接着剤１０４を流し込む略矩形状（または円形状）の溝１０２が形成されている。凹部１０１及び溝１０２は切削加工により形成する。固体撮像素子３をパッケージ基板１００に固着するときには、凹部１０１の底面のうち溝１０２が形成されていない領域１０３に固体撮像素子３の下面を当てつつ、固体撮像素子３を接着剤１０４を介して凹部１０１の底面に接着する。   In the above embodiment, a flat substrate is used as the package substrate, but a cavity type substrate may be used. As shown in FIG. 4, the package substrate 100 is made of metal, and has a substantially rectangular (or circular) recess 101 to which the solid-state imaging device 3 is fixed at the center. A substantially rectangular (or circular) groove 102 into which the adhesive 104 is poured is formed on the bottom surface of the recess 101. The recess 101 and the groove 102 are formed by cutting. When the solid-state image pickup device 3 is fixed to the package substrate 100, the solid-state image pickup device 3 is placed through the adhesive 104 while the lower surface of the solid-state image pickup device 3 is applied to the region 103 where the groove 102 is not formed in the bottom surface of the recess 101. Adhere to the bottom surface of the recess 101.

撮像デバイスの外観斜視図である。It is an external appearance perspective view of an imaging device. 撮像デバイスの断面図である。It is sectional drawing of an imaging device. 撮像デバイスの製造工程を示す図である。It is a figure which shows the manufacturing process of an imaging device. キャビティタイプのパッケージ基板を用いた撮像デバイスを示す断面図である。It is sectional drawing which shows the imaging device using a cavity type package board | substrate.

符号の説明Explanation of symbols

２ 撮像デバイス
３ 固体撮像素子
４，１００ パッケージ基板
４ａ 溝
４ｂ 位置決め部
５ 透明カバー
８ 絶縁層
１２ 光硬化型接着剤 DESCRIPTION OF SYMBOLS 2 Imaging device 3 Solid-state image sensor 4,100 Package substrate 4a Groove 4b Positioning part 5 Transparent cover 8 Insulating layer 12 Photocurable adhesive

Claims (3)

金属製のパッケージ基板と、
前記パッケージ基板の上面に固着された固体撮像素子と、
前記固体撮像素子の撮像面を覆うようにして、前記固体撮像素子を前記パッケージ基板との間で密封する透明カバーとからなることを特徴とする撮像デバイス。 A metal package substrate,
A solid-state imaging device fixed to the upper surface of the package substrate;
An imaging device comprising: a transparent cover that covers the imaging surface of the solid-state imaging device and seals the solid-state imaging device with the package substrate. 前記パッケージ基板は平板状に形成され、前記透明カバーは下面側に開口をもつ箱型に形成され、前記透明カバーの下部が前記パッケージ基板の上面に光硬化型接着剤を用いて接着されることを特徴とする請求項１記載の撮像デバイス。   The package substrate is formed in a flat plate shape, the transparent cover is formed in a box shape having an opening on the lower surface side, and a lower portion of the transparent cover is bonded to the upper surface of the package substrate using a photocurable adhesive. The imaging device according to claim 1. 前記パッケージ基板の上面には前記固体撮像素子を固着するための接着剤を流し込む溝が形成され、前記上面のうち前記溝が形成されていない領域が、前記固体撮像素子を位置決めするために前記固体撮像素子の下面が当てられる位置決め部になっていることを特徴とする請求項１または２記載の撮像デバイス。   A groove into which an adhesive for fixing the solid-state image sensor is poured is formed on the upper surface of the package substrate, and a region of the upper surface where the groove is not formed is used to position the solid-state image sensor. The imaging device according to claim 1, wherein the imaging device is a positioning portion to which a lower surface of the imaging element is applied.
JP2007207660A 2007-08-09 2007-08-09 Imaging device Pending JP2009044494A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007207660A JP2009044494A (en) 2007-08-09 2007-08-09 Imaging device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007207660A JP2009044494A (en) 2007-08-09 2007-08-09 Imaging device

Publications (1)

Publication Number Publication Date
JP2009044494A true JP2009044494A (en) 2009-02-26

Family

ID=40444745

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007207660A Pending JP2009044494A (en) 2007-08-09 2007-08-09 Imaging device

Country Status (1)

Country Link
JP (1) JP2009044494A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014192442A (en) * 2013-03-28 2014-10-06 Nec Corp Hermetic sealing body and hermetic sealing method
KR101653996B1 (en) * 2016-01-20 2016-09-09 테라셈 주식회사 Glass semiconductor package for image sensor
KR20170030378A (en) 2015-09-09 2017-03-17 삼성전기주식회사 Camera module
CN109887781A (en) * 2019-04-04 2019-06-14 上海科世达-华阳汽车电器有限公司 A kind of sensing components connection structure
CN110010557A (en) * 2018-01-05 2019-07-12 深圳市绎立锐光科技开发有限公司 Substrate, the method and encapsulating structure that encapsulating structure is formed using substrate

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014192442A (en) * 2013-03-28 2014-10-06 Nec Corp Hermetic sealing body and hermetic sealing method
KR20170030378A (en) 2015-09-09 2017-03-17 삼성전기주식회사 Camera module
KR101653996B1 (en) * 2016-01-20 2016-09-09 테라셈 주식회사 Glass semiconductor package for image sensor
CN110010557A (en) * 2018-01-05 2019-07-12 深圳市绎立锐光科技开发有限公司 Substrate, the method and encapsulating structure that encapsulating structure is formed using substrate
CN109887781A (en) * 2019-04-04 2019-06-14 上海科世达-华阳汽车电器有限公司 A kind of sensing components connection structure

Similar Documents

Publication Publication Date Title
KR100604190B1 (en) Solid state imaging device, semiconductor wafer, optical device module, method of solid state imaging device fabrication, and method of optical device module fabrication
JP5676171B2 (en) Solid-state imaging device, manufacturing method thereof, and electronic apparatus
JP2006276463A (en) Module for optical device and method of manufacturing module for optical device
US20050285016A1 (en) Image sensor module structure comprising wire bonding package and method of manufacturing the image sensor module structure
JP2008283002A (en) Imaging element module and its manufacturing method
JP2006287533A (en) Module for optical device
JP2004301938A (en) Module for optical device and manufacturing method of module for optical device
JP2006278726A (en) Semiconductor device module and its manufacturing method
JP2003198897A (en) Optical module, circuit board, and electronic device
JP2008258921A (en) Solid-state imaging apparatus, and electronic equipment with same
JP2007116560A (en) Imaging device and method of manufacturing the same
JP2005026426A (en) Solid-state imaging device and its manufacturing method
US20090147115A1 (en) Solid-state image pick-up device, method for producing the same, and electronics device with the same
JP6067262B2 (en) Semiconductor device, manufacturing method thereof, and camera
JP2007317719A (en) Imaging device and its manufacturing method
WO2016203923A1 (en) Module, module manufacturing method, and electronic apparatus
JP4466552B2 (en) Method for manufacturing solid-state imaging device
JP2008277593A (en) Circuit board, optical device employing the same, camera module, and manufacturing method for the circuit board
JP2009044494A (en) Imaging device
JP2005064292A (en) Method of manufacturing solid state imaging device
JP2011187482A (en) Solid-state imaging apparatus, module for optical device, and method of manufacturing solid-state imaging apparatus
JP3838573B2 (en) Solid-state imaging device
JP2009193986A (en) Semiconductor device and method for manufacturing the same
JP5899862B2 (en) The camera module
JP5694670B2 (en) Solid-state imaging device and manufacturing method thereof