TWI803127B - 半導體元件組裝方法、半導體元件和電子設備 - Google Patents
半導體元件組裝方法、半導體元件和電子設備 Download PDFInfo
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Abstract
本申請提供一種半導體元件組裝方法、半導體元件和電子設備。該方法包括:提供互連板和至少一個半導體器件;使第一對準焊接部與對應的第二對準焊接部基本對準;通過熔融或部分熔融第一對準焊接部和/或第二對準焊接部形成對準焊點,使至少一個半導體器件與互連板精確對準;在對準焊點熔融或部分熔融、並且第一連接端子和/或第二連接端子處於熔融狀態時,將至少一個半導體器件朝向互連板按壓,以使得第一連接端子和對應的第二連接端子結合成熔融或部分熔融狀態的互連焊點,然後使對準焊點和/或互連焊點凝固或基本凝固。採用本申請提供的組裝方法,半導體器件與互連板的對位精准,工藝簡單,設備成本低。
Description
本申請屬於半導體製造技術領域,具體涉及一種半導體元件組裝方法、半導體元件和電子設備。
在微電子產品製造中,通常會將半導體器件(例如封裝好的晶片或裸芯)焊接在互連板(例如基板(substrate)或轉接板(interposer))上,得到半導體元件,再將半導體元件與其他的元器件實現互連形成電子產品或系統。
在另一些場景中,需要將一個或多個半導體器件焊接在另個半導體器件上,實現這些半導體器件之間的互連。
如何以較低的設備及工藝成本實現半導體器件高精度地放置並固定在互連板或另一個半導體器件上,成為亟待解決的技術問題。
本申請的目的在於針對現有技術的不足之處,提供一種創新的半導體元件組裝方法、半導體元件和電子設備。
為解決上述技術問題,本申請採用如下技術方案:一種半導體元件組裝方法,包括:
提供互連板和至少一個半導體器件,其中,所述互連板上形成有多個第一連接端子和多個第一對準焊接部,任一所述半導體器件的有源表面上形成有多個第二連接端子和多個第二對準焊接部,所述第一連接端子和所述第二連接端子一一對應,所述第一對準焊接部和所述第二對準焊接部一一對應,任一所述第一連接端子與對應的第二連接端子的高度和小於任一第一對準焊接部和對應的第二對準焊接部的高度和;
將所述至少一個半導體器件放置在所述互連板上,使得所述第一對準焊接部與對應的第二對準焊接部基本對準;
採用焊接工藝使得所述第一對準焊接部和對應的第二對準焊接部彼此結合成熔融或部分熔融狀態的對準焊點,以使所述至少一個半導體器件精確對準,其中,所述第一連接端子和對應的第二連接端子之間留有間距;
在所述對準焊點熔融或部分熔融、並且所述第一連接端子和/或所述第二連接端子處於熔融或部分熔融狀態時,將所述至少一個半導體器件朝向所述互連板按壓,以使得所述第一連接端子和對應的第二連接端子彼此結合成熔融或部分熔融狀態的互連焊點;
在所述對準焊點和/或所述互連焊點凝固或基本凝固後解除對所述至少一個半導體器件的按壓。
為解決上述技術問題,本申請採用如下技術方案:一種半導體元件組裝方法,包括:
提供第一半導體器件和至少一個第二半導體器件,其中,所述第一半導體器件的有源表面上形成多個第一連接端子和多個第一對準焊接部,所述至少一個第二半導體器件的有源表面上形成有多個第二連接端子和多個第二對準焊接部,所述第一連接端子和所述第二連接端子一一對應,所述第一對準焊接部和所述第二對準焊接部一一對應,任一所述第一連接端子與對應的第二連接端子的高度和小於任一第一對準焊接部和對應的第二對準焊接部的高度和;
將所述至少一個第二半導體器件放置在所述第一半導體器件上,使得所述第一對準焊接部與對應的第二對準焊接部基本對準;
採用焊接工藝使得所述第一對準焊接部和對應的第二對準焊接部彼此結合成熔融或部分熔融狀態的對準焊點,以使所述第一半導體器件和所述至少一個第二半導體器件精確對準,其中,所述第一連接端子和對應的第二連接端子之間留有間距;
在所述對準焊點熔融或部分熔融、並且所述第一連接端子和/或所述第二連接端子處於熔融或部分熔融狀態時,將所述至少一個第二半導體器件朝向所述第一半導體器件按壓,以使得所述第一連接端子和對應的第二連接端子彼此結合成熔融或部分熔融狀態的互連焊點;
在所述對準焊點和/或所述互連焊點凝固或基本凝固後解除對所述至少一個第二半導體器件的按壓。
為解決上述技術問題,本申請採用如下技術方案:一種半導體元件組裝方法,包括;
提供互連板和至少一個半導體器件,其中,所述互連板上形成有多個第一連接端子和多個第一對準焊接部,任一所述半導體器件的有源表面上形成有多個第二連接端子和多個第二對準焊接部,所述第一連接端子和所述第二連接端子一一對應,所述第一對準焊接部和所述第二對準焊接部一一對應,任一所述第一連接端子與對應的第二連接端子的高度和小於任一第一對準焊接部和對應的第二對準焊接部的高度和;
將所述至少一個半導體器件放置在所述互連板上,使得所述第一對準焊接部與對應的第二對準焊接部基本對準;
採用焊接工藝使得所述第一對準焊接部和對應的第二對準焊接部彼此結合成熔融或部分熔融狀態的對準焊點,以使所述至少一個半導體器件精確對準,其中,所述第一連接端子和對應的第二連接端子之間留有間距;
在所述對準焊點熔融或部分熔融時,將所述至少一個半導體器件朝向所述互連板按壓,以使得所述第一連接端子和對應的第二連接端子經熱壓而綁定成互連凸點。
為解決上述技術問題,本申請採用如下技術方案:一種半導體元件組裝方法,包括:
提供第一半導體器件和至少一個第二半導體器件,其中,所述第一半導體器件的有源表面上形成多個第一連接端子和多個第一對準焊接部,所述至少一個第二半導體器件的有源表面上形成有多個第二連接端子和多個第二對準焊接部,所述第一連接端子和所述第二連接端子一一對應,所述第一對準焊接部和所述第二對準焊接部一一對應,任一所述第一連接端子與對應的第二連接端子的高度和小於任一第一對準焊接部和對應的第二對準焊接部的高度和;
將所述至少一個第二半導體器件放置在所述第一半導體器件上,使得所述第一對準焊接部與對應的第二對準焊接部基本對準;
採用焊接工藝使得所述第一對準焊接部和對應的第二對準焊接部彼此結合成熔融或部分熔融狀態的對準焊點,以使所述第一半導體器件和所述至少一個第二半導體器件精確對準,其中,所述第一連接端子和對應的第二連接端子之間留有間距;
在所述對準焊點熔融或部分熔融時,將所述至少一個第二半導體器件朝向所述第一半導體器件按壓,以使得所述第一連接端子和對應的第二連接端子經熱壓而綁定成互連凸點。
為解決上述技術問題,本申請採用如下技術方案:一種半導體元件,所述半導體元件由前述的方法制得。
為解決上述技術問題,本申請採用如下技術方案:一種電子設備,所述電子設備包括前述的半導體元件。
與現有技術相比,本申請的有益效果為:基於熔融和部分熔融狀態焊點的最小表面能原理會自動地使半導體器件精確地引入至目標位置以達到表面能最小化,且對準焊點在凝固和基本凝固後使得半導體器件牢準確地固定在目標位置。如對第一對準焊接部和第二對準焊接部(例如對體積、幾何形狀、成分、位置、分佈和數量等的方面)優化設計,能夠實現最精確、有效、高效且可靠的自對準能力。半導體器件的精確對位也保證了第一連接端子和第二連接端子的精確對位。鑒於對準焊點的自對準能力而在拾取並放置半導體器件時容許一定程度的放置偏差,從而可顯著降低對半導體器件放置精度的要求,且可顯著提高半導體器件拾取和放置操作的速度,進而提高工藝效率,降低工藝和設備成本。
在本申請中,應理解,諸如“包括”或“具有”等術語旨在指示本說明書中存在所公開的特徵、數位、步驟、行為、部件、部分或其組合的存在,但是並不排除存在一個或多個其他特徵、數位、步驟、行為、部件、部分或其組合存在的可能性。
另外還需要說明的是,在不衝突的情況下,本申請中的實施例及實施例中的特徵可以相互組合。下面將參考附圖並結合實施例來詳細說明本申請。
半導體器件是現代電子設備或產品的核心部件。半導體器件包括:分立式半導體器件和多晶片半導體器件。分立式半導體器件例如,單顆的數位邏輯處理器、三極管、雙極型電晶體、場效應電晶體、積體電路等有源器件和二極體、片式電阻、電容、電感、集成被動元器件(IPD)等無源器件。多晶片半導體器件,例如影像感測器(CIS)與影像處理器(ASIC)的模組、中央處理器(CPU)與動態儲存裝置器(DRAM)的堆疊。本申請涉及的半導體器件可以是處於封裝完的狀態,也可以是處於裸芯的狀態。
本申請關注的是如何將半導體器件焊接在互連板上,以實現半導體器件與互連板之間的信號的互連以及如何將半導體器件焊接在另一個半導體器件上。
如本申請所使用的術語“有源表面”通常指半導體器件的具有電路功能的一側表面,其上具有互連焊盤(或形成在互連焊盤上的互連凸點)。
如本申請所使用的術語“連接端子”通常指半導體器件的有源表面上的互連焊盤或互連凸點,以及互連板上的互連焊盤或互連凸點。
如本申請所使用的術語“對準焊接部”通常指可通過本領域已知的組裝方法焊接至對應的另一對準焊接部以用於對準的結構。
下面結合附圖所示的實施例對本申請作進一步說明。
如附圖1a所示,本申請的半導體元件組裝方法包括以下步驟。
步驟1000、提供互連板和至少一個半導體器件,其中,所述互連板上形成有多個第一連接端子和多個第一對準焊接部,任一所述半導體器件的有源表面上形成有多個第二連接端子和多個第二對準焊接部,所述第一連接端子和所述第二連接端子一一對應,所述第一對準焊接部和所述第二對準焊接部一一對應,任一所述第一連接端子與對應的第二連接端子的高度和小於任一第一對準焊接部和對應的第二對準焊接部的高度和。
在一些實施例中,半導體器件的數量為多個,各半導體器件在功能、尺寸或形狀上可以至少部分地彼此不同,也可以彼此相同。
本申請對互連板的材料不做限定,例如互連板的材料可以是矽、有機高分子、玻璃、陶瓷或金屬,或者上述材料的組合。在一些實施例中,互連板也稱為基板(substrate)。在另一些實施例中,互連板也稱轉接板(interposer)。只要用於承接半導體器件並能夠實現與其信號互連的板材均可作為互連板。
在一些實施例中,所述第一對準焊接部和所述第二對準焊接部中的任一者具有焊接凸點的形態,另一者具有與所述焊接凸點對應的焊盤的形態;或者所述第一對準焊接部和所述第二對準焊接部均具有焊接凸點的形態。
例如,所述焊接凸點由焊錫製成,後續步驟中通過熔融焊錫來形成所述對準焊點。
作為示例,所述焊接凸點可採用本領域已知的凸點製作工藝(例如,電鍍法、植球法、範本印刷法、蒸發/濺射法等)預先製作在半導體器件(例如,晶圓)或互連板上。作為示例,所述焊盤可採用沉積(例如金屬層)-光刻-蝕刻工藝預先製作在半導體器件或互連板上。應當理解,所述第一對準焊接部和所述第二對準焊接部只要能夠彼此焊接以用於對準目的,也可以採用任何其他焊接結構或形態。
在一些實施例中,所述第一對準焊接部在體積、尺寸、幾何形狀、成分、分佈、位置和數量等方面與所述第二對準焊接部彼此對應,使得能夠通過焊接彼此來使所述半導體器件在所述互連板上精確地對準至相應的目標位置。
在一些實施例中,所述第一連接端子和所述第二連接端子中任一者具有焊接凸點的形態,另一者具有與所述焊接凸點對應的焊盤的形態;或者所述第一連接端子和所述第二連接端子均具有焊接凸點的形態。
例如,所述焊接凸點由焊錫製成,後續步驟中通過熔融焊錫來形成所述互連焊點。
參考圖2,互連板1的上表面上形成有多個第一對準焊接部11和多個第一連接端子12。步驟1000中提供兩個半導體器件2,二者尺寸不同。每個半導體器件2的有源表面上均形成有多個第二對準焊接部21和多個第二連接端子。
互連板上各第一連接端子之間可以存在互連的引線,也可以彼此之間沒有互連引線。如將互連板的具有第一對準焊接部的表面稱為互連板的 “正面”,互連板的與其“正面”相對的面稱為互連板的“背面”,用於實現最終制得的半導體元件與外部的信號實現互連的端子可以設置在互連板的“背面”,也可以是設置在互連板的“正面”。
步驟1001、將所述至少一個半導體器件放置在所述互連板上,使得所述第一對準焊接部與對應的第二對準焊接部基本對準。
在一些實施例中,所述“基本對準”包括:使得所述第一對準焊接部與對應的第二對準焊接部彼此接觸,但二者的中心在所述互連板所處平面的正投影允許存在偏差。“基本對準”的狀態並不排除二者的中心在所述互連板所處平面的正投影精確重疊的狀態。
需要說明的是,所述第一對準焊接部與所述第二對準焊接部的“基本對準”表示至少存在所述第一對準焊接部與所述第二對準焊接部之間的接觸以致於能夠如下文所述借助於焊接過程中處於熔融或部分熔融狀態的對準焊點的最小表面能原理進行自對準的程度。
參考圖3,在步驟1001中將半導體器件2放置在互連板1上時,半導體器件2的有源表面面向互連板1(即,形成有第一對準焊接部11的表面),半導體器件2的無源表面背向互連板1。在這一步中,半導體器件2與互連板1並不要求完全對準。
步驟1002、採用焊接工藝使得所述第一對準焊接部和對應的第二對準焊接部彼此結合成熔融或部分熔融狀態的對準焊點,以使所述至少一個半導體器件精確對準,其中,所述第一連接端子和對應的第二連接端子之間留有間距。
需要說明的是,“精確對準”表示所述半導體器件在所述互連板上的實際位置與目標位置之間的偏差在本領域的容差範圍內的狀態。應當理解,所述精確對準是利用焊接第一對準焊接部和第二對準焊接部而成的對準焊點在焊接過程中的熔融或部分熔融狀態下呈現的最小表面能原理來實現的。具體地,當第一對準焊接部和第二對準焊接部彼此接觸但二者的中心在互連板所處平面的正投影並未重疊時,在焊接過程中,所述第一對準焊接部和所述第二對準焊接部中作為焊接凸點的一方熔融或部分熔融並浸潤作為焊盤或另一焊接凸點的另一方,或所述第一對準焊接部和所述第二對準焊接部均作為焊接凸點熔融或部分熔融,由此形成處於熔融或部分熔融狀態的對準焊點,此時基於最小表面能原理,處於熔融或部分熔融狀態的對準焊點會趨於變形移動以使所述第一對準焊接部和所述第二對準焊接部接近對中狀態,從而帶動相對于互連板較輕的半導體器件以精確對準至互連板上的目標位置。
應當理解,在焊接所述第一對準焊接部與所述第二對準焊接部之後,由於由此形成的對準焊點本身的高度(在垂直於所述半導體器件的有源表面或所述互連板的方向上),所述半導體器件的有源表面和所述互連板相隔開以在它們之間形成一定的空間。應當保證所述第一連接端子和對應的第二連接端子之間留有間距。
第一連接端子和第二連接端子的熔點可能高於使第一對準焊接部和第二對準焊接部結合成對準焊點的溫度,也可能低於該溫度。當第一對準焊接部和第二對準焊接部融合在一起時,第一連接端子和第二連接端子可能是固體狀態也可能處於熔融狀態。由於此時第一連接端子和第二連接端子是彼此分開的,二者並不會結合在一起形成互連焊點。
在一些實施例中,所述焊接凸點由焊錫製成,且所述焊接可採用本領域已知的各種熔融焊錫的焊接方式,包括但不限於回流焊、鐳射焊、高頻焊接、紅外焊接等。
參考圖4,第一對準焊接部11呈焊盤的形態,第二對準焊接部21呈焊接凸點的形態。當第二對準焊接部21處於熔融狀態並浸潤第一對準焊接部11時,在最小表面能的作用下,第二對準焊接部21趨於移動至第一對準焊接部11的中心處,從而帶動半導體器件2移動至預期的準確位置處。第一對準焊接部11和第二對準焊接部21結合成為對準焊點100。如此,完成了互連板1與半導體器件2之間的自對準。
對比圖4和圖3,半導體器件2在焊接過程中自動移動到了與互連板1精確對準的位置處。
步驟1003、在所述對準焊點熔融或部分熔融、並且所述第一連接端子和/或所述第二連接端子處於熔融或部分熔融狀態時,將所述至少一個半導體器件朝向所述互連板按壓,以使得所述第一連接端子和對應的第二連接端子彼此結合成熔融或部分熔融狀態的互連焊點。
由於半導體器件此時的位置是其預期的位置,第一連接端子與第二連接端子也是正對的,此時下壓半導體器件,可以使得第一連接端子與第二連接端子在對中的狀態下結合在一起形成互連焊點,從而實現良好的電性連接。
一種實施方式是:在所述對準焊點凝固或基本凝固後,再次採用焊接工藝使得所述對準焊點熔融或部分熔融、並且使得所述第一連接端子和/或所述第二連接端子處於熔融或部分熔融狀態後,隨後對所述至少一個半導體器件進行按壓。
另一種實施方式是:在所述熔融或部分熔融狀態的對準焊點形成後,保持所述對準焊點處於熔融或部分熔融狀態,並使所述第一連接端子和/或所述第二連接端子處於熔融或部分熔融狀態,將所述至少一個半導體器件朝向所述互連板按壓。
前者有利於對半導體器件的對準狀態進行檢查,後者有利於提高生產效率。
參考圖5,對準焊點100被壓扁,使得第一連接端子12和第二連接端子22結合成為互連焊點200。
具體地,可以採用壓平板下壓半導體器件。
步驟1002和步驟1003之間的間隔時間內,可以執行對對準焊點的焊接狀態進行檢查的工藝。
步驟1004、在所述對準焊點和/或所述互連焊點凝固或基本凝固後解除對所述至少一個半導體器件的按壓。
解除對所述至少一個半導體器件的按壓的前提是對準焊點和互連焊點的形狀均能保持穩定,本領域技術人員可以根據實際情況靈活調整解除對所述至少一個半導體器件的按壓的時機、作用力、下壓距離、按壓時間等參數。
參考圖6,完成焊接後,對準焊點100和互連焊點200均位於預期的位置。
基於最小表面能原理會自動地使半導體器件精確地引入至目標位置以達到表面能最小化,且對準焊點使得半導體器件牢準確地固定在目標位置。如對第一對準焊接部和第二對準焊接部(例如對體積、幾何形狀、成分、位置、分佈和數量等的方面)優化設計,能夠實現最精確、有效、高效且可靠的自對準能力。半導體器件的精確對位也保證了第一連接端子和第二連接端子的精確對位。鑒於對準焊點的自對準能力而在拾取並放置半導體器件時容許一定程度的放置偏差,從而可顯著降低對半導體器件放置精度的要求,且可顯著提高半導體器件拾取和放置操作的速度,進而提高工藝效率,降低工藝和設備成本。
參考圖6,在一些實施例中,所述多個第二對準焊接部21在所述有源表面上位於所述第二連接端子22所處區域外側。當然,第二對準焊接部21也可能是設置在第二連接端子22中。本領域技術人員可以根據實際情況靈活設置第二對準焊接部21的位置。
在一些實施例中,所述互連板的所述第一對準焊接部的周邊分別預先形成有焊錫阱。在下壓半導體器件時,熔融或部分熔融狀態的對準焊點的材料可能向周邊溢出或流動,容易引發對準焊點與互聯焊點之間或對準焊點與對準焊點之間短路或造成其他不良影響。焊錫阱用於接收這些多餘的對準焊點的材料。
參考圖9,在一些實施例中,所述互連板1上形成有環繞所述第一對準焊接部11的凹槽13,所述凹槽13用於接收熔融態的所述對準焊點100的材料。即焊錫阱呈凹槽狀。
在前述的步驟1003中,隨著半導體器件被朝向互連板下壓,形成對準焊點100的材料會向外溢出或流動,這容易引發對準焊點與互連焊點之間發生短路。為避免這一問題,可以在第一對準焊接部周圍設置凹槽,該凹槽用於接納外溢的熔融狀態的對準焊點的材料。
需要說明的是,凹槽環繞第一對準焊接部,指的是凹槽在互連板所處平面的正投影環繞第一對準焊接部在互連板所處平面的正投影。
基於相同的發明構思,參考圖10,所述互連板1上形成有環繞所述第一對準焊接部11的通孔14,所述通孔14用於供熔融態的所述對準焊點100的材料流出所述互連板1。即焊錫阱呈通孔狀。
與前一個實施方式不同,互連板並不存留多餘的對準焊點的材料,而是當多餘的對準焊點的材料處於熔融狀態且向四周外溢時,多餘的對準焊點的材料會從通孔直接流出互連板。
具體的,所述通孔為多個且彼此之間留有間距。如此設計,是為了保證互連板的機械強度。
在一些實施例中,完成各個半導體器件的焊接工序之後,整個互連板即作為獨立的產品(即本申請所述的半導體元件)。
在另一些實施例中,為提高生產效率,互連板足夠大,在完成各個半導體器件的焊接工藝之後,需要對互連板進行切割,從而得到多個半導體元件。
即在半導體器件準確地固定在互連板上之後,進一步可以執行:對所述互連板進行切割,以得到多個半導體元件,任一所述半導體元件對應至少一個所述半導體器件。
在一些實施例中,參考圖7,對準焊點100被保留,其可以用作連接電信號、電源電位、用於接地、或者用於機械固定和散熱等功能。
在一些實施例中,參考圖8,對所述基1進行切割時,還切除至少一個對準焊點100。
而當對準焊點100無需被保留時,如圖8所示,在切割互連板1時,可以將對準焊點100切除。
參考圖1b,本申請的實施例還提一種半導體元件的組裝方法。該方法與前述實施例的組裝方法是基於相同的發明構思,與前述實施例相同之處不做贅述。該方法包括以下步驟。
步驟2000、提供第一半導體器件和至少一個第二半導體器件,其中,所述第一半導體器件的有源表面上形成多個第一連接端子和多個第一對準焊接部,所述至少一個第二半導體器件的有源表面上形成有多個第二連接端子和多個第二對準焊接部,所述第一連接端子和所述第二連接端子一一對應,所述第一對準焊接部和所述第二對準焊接部一一對應,任一所述第一連接端子與對應的第二連接端子的高度和小於任一第一對準焊接部和對應的第二對準焊接部的高度和。
步驟2001、將所述至少一個第二半導體器件放置在所述第一半導體器件上,使得所述第一對準焊接部與對應的第二對準焊接部基本對準。
步驟2002、採用焊接工藝使得所述第一對準焊接部和對應的第二對準焊接部彼此結合成熔融或部分熔融狀態的對準焊點,以使所述第一半導體器件和所述至少一個第二半導體器件精確對準,其中,所述第一連接端子和對應的第二連接端子之間留有間距。
步驟2003、在所述對準焊點熔融或部分熔融、並且所述第一連接端子和/或所述第二連接端子處於熔融或部分熔融狀態時,將所述至少一個第二半導體器件朝向所述第一半導體器件按壓,以使得所述第一連接端子和對應的第二連接端子彼此結合成熔融或部分熔融狀態的互連焊點。
步驟2004、在所述對準焊點和/或所述互連焊點凝固或基本凝固後解除對所述至少一個第二半導體器件的按壓。
該方法與圖1a所示方法的區別在於:將下方的的互連板替換為第一半導體器件,也就是將一個或多個第二半導體器件焊接在第一半導體器件上。從而實現第二半導體器件與第一半導體器件直接的互連。相關的技術細節可以參照圖1a所示方法的相關描述,在此不做贅述。
在一些實施例中,所述第一對準焊接部和所述第二對準焊接部中的任一者具有焊接凸點的形態,另一者具有與所述焊接凸點對應的焊盤的形態;或者所述第一對準焊接部和所述第二對準焊接部均具有焊接凸點的形態。
在一些實施例中,所述焊接凸點由焊錫製成,且通過熔融焊錫來形成所述對準焊點。
在一些實施例中,所述第一連接端子和所述第二連接端子中任一者具有焊接凸點的形態,另一者具有與所述焊接凸點對應的焊盤的形態;或者所述第一連接端子和所述第二連接端子均具有焊接凸點的形態。
在一些實施例中,所述焊接凸點由焊錫製成,且通過熔融焊錫來形成所述互連焊點。
在一些實施例中,使得所述第一對準焊接部與對應的第二對準焊接部基本對準,包括:使得所述第一對準焊接部與對應的第二對準焊接部彼此接觸,其中,所述第一對準焊接部與對應的第二對準焊二者的中心在所述第一半導體器件的有源表面所處平面的正投影允許存在偏差。
在一些實施例中,將所述至少一個第二半導體器件朝向所述第一半導體器件按壓時,採用壓平板對所述至少一個第二半導體器件進行按壓。
在一些實施例中,在所述對準焊點熔融或部分熔融、並且所述第一連接端子和/或所述第二連接端子處於熔融或部分熔融狀態時,將所述至少一個第二半導體器件朝向所述第一半導體器件按壓,以使得所述第一連接端子和對應的第二連接端子彼此結合成熔融或部分熔融狀態的互連焊點,包括:
在所述對準焊點凝固或基本凝固後,再次採用焊接工藝使得所述對準焊點熔融或部分熔融、並且使得所述第一連接端子和/或所述第二連接端子處於熔融或部分熔融狀態後,對所述至少一個第二半導體器件進行按壓。
在一些實施例中,在所述對準焊點熔融或部分熔融、並且所述第一連接端子和/或所述第二連接端子處於熔融或部分熔融狀態時,將所述至少一個第二半導體器件朝向所述第一半導體器件按壓,以使得所述第一連接端子和對應的第二連接端子彼此結合成熔融或部分熔融狀態的互連焊點,包括:
在所述熔融或部分熔融狀態的對準焊點形成後,保持所述對準焊點處於熔融或部分熔融狀態,並使所述第一連接端子和/或所述第二連接端子處於熔融或部分熔融狀態,將所述至少一個第二半導體器件朝向所述第一半導體器件按壓。
基於相同的發明構思,參考圖1c,本申請的實施例還提供一種半導體器件組裝方法,包括以下步驟。
步驟3000、提供互連板和至少一個半導體器件,其中,所述互連板上形成有多個第一連接端子和多個第一對準焊接部,任一所述半導體器件的有源表面上形成有多個第二連接端子和多個第二對準焊接部,所述第一連接端子和所述第二連接端子一一對應,所述第一對準焊接部和所述第二對準焊接部一一對應,任一所述第一連接端子與對應的第二連接端子的高度和小於任一第一對準焊接部和對應的第二對準焊接部的高度和。
步驟3001、將所述至少一個半導體器件放置在所述互連板上,使得所述第一對準焊接部與對應的第二對準焊接部基本對準。
步驟3002、採用焊接工藝使得所述第一對準焊接部和對應的第二對準焊接部彼此結合成熔融或部分熔融狀態的對準焊點,以使所述至少一個半導體器件精確對準,其中,所述第一連接端子和對應的第二連接端子之間留有間距。
步驟3003、在所述對準焊點熔融或部分熔融時,將所述至少一個半導體器件朝向所述互連板按壓,以使得所述第一連接端子和對應的第二連接端子經熱壓而綁定成互連凸點。
該方法與圖1a所示方法的區別在於:互連凸點是通過熱壓的工藝使得第一連接端子和對應的第二連接端子綁定(Bonding)形成的。相關的技術細節可以參照圖1a所示方法的相關描述,在此不做贅述。
需要說明的是,由於互連凸點的機械強度足夠穩定,在撤去對半導體器件的按壓時,對準焊點可以處於凝固狀態,也可以是處於熔融狀態,本領域技術人員可以根據實際情況靈活調整。
在一些實施例中,所述第一對準焊接部和所述第二對準焊接部中的任一者具有焊接凸點的形態,另一者具有與所述焊接凸點對應的焊盤的形態;或者所述第一對準焊接部和所述第二對準焊接部均具有焊接凸點的形態。
在一些實施例中,所述焊接凸點由焊錫製成,且通過熔融焊錫來形成所述對準焊點。
在一些實施例中,使得所述第一對準焊接部與對應的第二對準焊接部基本對準,包括:使得所述第一對準焊接部與對應的第二對準焊接部彼此接觸,其中,所述第一對準焊接部與對應的第二對準焊二者的中心在所述互連板所處平面的正投影允許存在偏差。
在一些實施例中,所述互連板的所述第一對準焊接部的周邊分別預先形成有焊錫阱。
在一些實施例中,還包括:對所述互連板進行切割,以得到多個半導體元件,任一所述半導體元件對應至少一個所述半導體器件。
在一些實施例中,對所述互連板進行切割時,還切除至少一個對準焊點。
在一些實施例中,將所述至少一個半導體器件朝向所述互連板按壓時,採用壓平板對所述至少一個半導體器件進行按壓。
在一些實施例中,在所述對準焊點熔融或部分熔融時,將所述至少一個半導體器件朝向所述互連板按壓,以使得所述第一連接端子和對應的第二連接端子經熱壓而綁定成互連凸點,包括:
在所述對準焊點凝固或基本凝固後,再次採用焊接工藝使得所述對準焊點熔融或部分熔融,隨後將所述至少一個半導體器件朝向所述互連板按壓。
在一些實施例中,在所述對準焊點熔融或部分熔融時,將所述至少一個半導體器件朝向所述互連板按壓,以使得所述第一連接端子和對應的第二連接端子經熱壓而綁定成互連凸點,包括:
在所述熔融或部分熔融狀態的對準焊點形成後,保持所述對準焊點處於熔融或部分熔融狀態,將所述至少一個半導體器件朝向所述互連板按壓。
基於相同的發明構思,參考圖1d,本申請還提供一種半導體元件組裝方法,包括:
步驟4000、提供第一半導體器件和至少一個第二半導體器件,其中,所述第一半導體器件的有源表面上形成多個第一連接端子和多個第一對準焊接部,所述至少一個第二半導體器件的有源表面上形成有多個第二連接端子和多個第二對準焊接部,所述第一連接端子和所述第二連接端子一一對應,所述第一對準焊接部和所述第二對準焊接部一一對應,任一所述第一連接端子與對應的第二連接端子的高度和小於任一第一對準焊接部和對應的第二對準焊接部的高度和。
步驟4001、將所述至少一個第二半導體器件放置在所述第一半導體器件上,使得所述第一對準焊接部與對應的第二對準焊接部基本對準。
步驟4002、採用焊接工藝使得所述第一對準焊接部和對應的第二對準焊接部彼此結合成熔融或部分熔融狀態的對準焊點,以使所述第一半導體器件和所述至少一個第二半導體器件精確對準,其中,所述第一連接端子和對應的第二連接端子之間留有間距。
步驟4003、在所述對準焊點熔融或部分熔融時,將所述至少一個第二半導體器件朝向所述第一半導體器件按壓,以使得所述第一連接端子和對應的第二連接端子經熱壓而綁定成互連凸點。
該方法與圖1a所示方法的區別在於:將下方的的互連板替換為第一半導體器件,也就是將一個或多個第二半導體器件焊接在第一半導體器件上,並且互連凸點是通過熱壓綁定的方式形成的。從而實現第二半導體器件與第一半導體器件直接的互連。相關的技術細節可以參照圖1a所示方法的相關描述,在此不做贅述。
在一些實施例中,所述第一對準焊接部和所述第二對準焊接部中的任一者具有焊接凸點的形態,另一者具有與所述焊接凸點對應的焊盤的形態;或者所述第一對準焊接部和所述第二對準焊接部均具有焊接凸點的形態。
在一些實施例中,所述焊接凸點由焊錫製成,且通過熔融焊錫來形成所述對準焊點。
在一些實施例中,使得所述第一對準焊接部與對應的第二對準焊接部基本對準,包括:使得所述第一對準焊接部與對應的第二對準焊接部彼此接觸,其中,所述第一對準焊接部與對應的第二對準焊二者的中心在所述第一半導體器件的有源表面所處平面的正投影允許存在偏差。
在一些實施例中,將所述至少一個第二半導體器件朝向所述第一半導體器件按壓時,採用壓平板對所述至少一個第二半導體器件進行按壓。
在一些實施例中,在所述對準焊點熔融或部分熔融時,將所述至少一個第二半導體器件朝向所述第一半導體器件按壓,以使得所述第一連接端子和對應的第二連接端子經熱壓而綁定成互連凸點,包括:
在所述對準焊點凝固或基本凝固後,再次採用焊接工藝使得所述對準焊點熔融或部分熔融,隨後將所述至少一個第二半導體器件朝向所述第一半導體器件按壓。
在一些實施例中,在所述對準焊點熔融或部分熔融時,將所述至少一個第二半導體器件朝向所述第一半導體器件按壓,以使得所述第一連接端子和對應的第二連接端子經熱壓而綁定成互連凸點,包括:
在所述熔融或部分熔融狀態的對準焊點形成後,保持所述對準焊點處於熔融或部分熔融狀態,將所述至少一個第二半導體器件朝向所述第一半導體器件按壓。
通常,對於將第二半導體器件固定在第一半導體器件的場景中,完成二者固定和互連後無需執行切割的工藝,即能得到半導體元件。
本申請的實施例還提供一種半導體元件,所述半導體元件由前述的方法制得。
本申請的實施例還提供一種電子設備,所述電子設備包括前述的半導體元件。
本申請中的各個實施例均採用遞進的方式描述,各個實施例之間相同相似的部分互相參見即可,每個實施例重點說明的都是與其他實施例的不同之處。
本申請的保護範圍不限於上述的實施例,顯然,本領域的技術人員可以對本申請進行各種改動和變形而不脫離本申請的範圍和精神。倘若這些改動和變形屬於本申請權利要求及其等同技術的範圍,則本申請的意圖也包含這些改動和變形在內。
1:互連板
11:第一對準焊接部
12:第一連接端子
13:凹槽
14:通孔
2:半導體器件
21:第二對準焊接部
22:第二連接端子
100:對準焊點
200:互連焊點
步驟1001:將所述至少一個半導體器件放置在所述互連板上,使得所述第一對準焊接部與對應的第二對準焊接部基本對準。
步驟1001:將半導體器件放置在互連板上時,半導體器件的有源表面面向互連板(即,形成有第一對準焊接部的表面),半導體器件的無源表面背向互連板。在這一步中,半導體器件與互連板並不要求完全對準。
步驟1002:採用焊接工藝使得所述第一對準焊接部和對應的第二對準焊接部彼此結合成熔融或部分熔融狀態的對準焊點,以使所述至少一個半導體器件精確對準,其中,所述第一連接端子和對應的第二連接端子之間留有間距。
步驟1003:在所述對準焊點熔融或部分熔融、並且所述第一連接端子和/或所述第二連接端子處於熔融或部分熔融狀態時,將所述至少一個半導體器件朝向所述互連板按壓,以使得所述第一連接端子和對應的第二連接端子彼此結合成熔融或部分熔融狀態的互連焊點。
步驟1004:在所述對準焊點和/或所述互連焊點凝固或基本凝固後解除對所述至少一個半導體器件的按壓。
步驟2000:提供第一半導體器件和至少一個第二半導體器件,其中,所述第一半導體器件的有源表面上形成多個第一連接端子和多個第一對準焊接部,所述至少一個第二半導體器件的有源表面上形成有多個第二連接端子和多個第二對準焊接部,所述第一連接端子和所述第二連接端子一一對應,所述第一對準焊接部和所述第二對準焊接部一一對應,任一所述第一連接端子與對應的第二連接端子的高度和小於任一第一對準焊接部和對應的第二對準焊接部的高度和。步驟2001將所述至少一個第二半導體器件放置在所述第一半導體器件上,使得所述第一對準焊接部與對應的第二對準焊接部基本對準。
步驟2002:採用焊接工藝使得所述第一對準焊接部和對應的第二對準焊接部彼此結合成熔融或部分熔融狀態的對準焊點,以使所述第一半導體器件和所述至少一個第二半導體器件精確對準,其中,所述第一連接端子和對應的第二連接端子之間留有間距。
步驟2003:在所述對準焊點熔融或部分熔融、並且所述第一連接端子和/或所述第二連接端子處於熔融或部分熔融狀態時,將所述至少一個第二半導體器件朝向所述第一半導體器件按壓,以使得所述第一連接端子和對應的第二連接端子彼此結合成熔融或部分熔融狀態的互連焊點。
步驟2004:在所述對準焊點和/或所述互連焊點凝固或基本凝固後解除對所述至少一個第二半導體器件的按壓。
步驟3000:提供互連板和至少一個半導體器件,其中,所述互連板上形成有多個第一連接端子和多個第一對準焊接部,任一所述半導體器件的有源表面上形成有多個第二連接端子和多個第二對準焊接部,所述第一連接端子和所述第二連接端子一一對應,所述第一對準焊接部和所述第二對準焊接部一一對應,任一所述第一連接端子與對應的第二連接端子的高度和小於任一第一對準焊接部和對應的第二對準焊接部的高度和。
步驟3001:將所述至少一個半導體器件放置在所述互連板上,使得所述第一對準焊接部與對應的第二對準焊接部基本對準。
步驟3002:採用焊接工藝使得所述第一對準焊接部和對應的第二對準焊接部彼此結合成熔融或部分熔融狀態的對準焊點,以使所述至少一個半導體器件精確對準,其中,所述第一連接端子和對應的第二連接端子之間留有間距。
步驟3003:在所述對準焊點熔融或部分熔融時,將所述至少一個半導體器件朝向所述互連板按壓,以使得所述第一連接端子和對應的第二連接端子經熱壓而綁定成互連凸點。
步驟4000:提供第一半導體器件和至少一個第二半導體器件,其中,所述第一半導體器件的有源表面上形成多個第一連接端子和多個第一對準焊接部,所述至少一個第二半導體器件的有源表面上形成有多個第二連接端子和多個第二對準焊接部,所述第一連接端子和所述第二連接端子一一對應,所述第一對準焊接部和所述第二對準焊接部一一對應,任一所述第一連接端子與對應的第二連接端子的高度和小於任一第一對準焊接部和對應的第二對準焊接部的高度和。
步驟4001:將所述至少一個第二半導體器件放置在所述第一半導體器件上,使得所述第一對準焊接部與對應的第二對準焊接部基本對準。
步驟4002:採用焊接工藝使得所述第一對準焊接部和對應的第二對準焊接部彼此結合成熔融或部分熔融狀態的對準焊點,以使所述第一半導體器件和所述至少一個第二半導體器件精確對準,其中,所述第一連接端子和對應的第二連接端子之間留有間距。
步驟4003:在所述對準焊點熔融或部分熔融時,將所述至少一個第二半導體器件朝向所述第一半導體器件按壓,以使得所述第一連接端子和對應的第二連接端子經熱壓而綁定成互連凸點。
[圖1a至圖1d]分別是根據本申請實施例的半導體元件組裝方法的流程示意圖。
[圖2-圖8]是根據本申請實施例的半導體元件組裝方法的不同階段產品狀態示意圖。
[圖9]是本申請實施例的互連板的正視圖和該正視圖中沿AA線的剖視圖。
[圖10]是根據本申請另一實施例的互連板的正視圖和該正視圖中沿BB線的剖視圖。
步驟1001:將所述至少一個半導體器件放置在所述互連板上,使得所述第一對準焊接部與對應的第二對準焊接部基本對準
步驟1001:將半導體器件放置在互連板上時,半導體器件的有源表面面向互連板(即,形成有第一對準焊接部的表面),半導體器件的無源表面背向互連板。在這一步中,半導體器件與互連板並不要求完全對準
步驟1002:採用焊接工藝使得所述第一對準焊接部和對應的第二對準焊接部彼此結合成熔融或部分熔融狀態的對準焊點,以使所述至少一個半導體器件精確對準,其中,所述第一連接端子和對應的第二連接端子之間留有間距
步驟1003:在所述對準焊點熔融或部分熔融、並且所述第一連接端子和/或所述第二連接端子處於熔融或部分熔融狀態時,將所述至少一個半導體器件朝向所述互連板按壓,以使得所述第一連接端子和對應的第二連接端子彼此結合成熔融或部分熔融狀態的互連焊點
步驟1004:在所述對準焊點和/或所述互連焊點凝固或基本凝固後解除對所述至少一個半導體器件的按壓
Claims (40)
- 一種半導體元件組裝方法,其中,包括: 提供互連板和至少一個半導體器件,其中,所述互連板上形成有多個第一連接端子和多個第一對準焊接部,任一所述半導體器件的有源表面上形成有多個第二連接端子和多個第二對準焊接部,所述第一連接端子和所述第二連接端子一一對應,所述第一對準焊接部和所述第二對準焊接部一一對應,任一所述第一連接端子與對應的第二連接端子的高度和小於任一第一對準焊接部和對應的第二對準焊接部的高度和; 將所述至少一個半導體器件放置在所述互連板上,使得所述第一對準焊接部與對應的第二對準焊接部基本對準; 採用焊接工藝使得所述第一對準焊接部和對應的第二對準焊接部彼此結合成熔融或部分熔融狀態的對準焊點,以使所述至少一個半導體器件精確對準,其中,所述第一連接端子和對應的第二連接端子之間留有間距; 在所述對準焊點熔融或部分熔融、並且所述第一連接端子和/或所述第二連接端子處於熔融或部分熔融狀態時,將所述至少一個半導體器件朝向所述互連板按壓,以使得所述第一連接端子和對應的第二連接端子彼此結合成熔融或部分熔融狀態的互連焊點; 在所述對準焊點和/或所述互連焊點凝固或基本凝固後解除對所述至少一個半導體器件的按壓。
- 如請求項1所述的方法,其中,所述第一對準焊接部和所述第二對準焊接部中的任一者具有焊接凸點的形態,另一者具有與所述焊接凸點對應的焊盤的形態;或者所述第一對準焊接部和所述第二對準焊接部均具有焊接凸點的形態。
- 如請求項2所述的方法,其中,所述焊接凸點由焊錫製成,且通過熔融焊錫來形成所述對準焊點。
- 如請求項1所述的方法,其中,所述第一連接端子和所述第二連接端子中任一者具有焊接凸點的形態,另一者具有與所述焊接凸點對應的焊盤的形態;或者所述第一連接端子和所述第二連接端子均具有焊接凸點的形態。
- 如請求項求4所述的方法,其中,所述焊接凸點由焊錫製成,且通過熔融焊錫來形成所述互連焊點。
- 如請求項1所述的方法,其中,使得所述第一對準焊接部與對應的第二對準焊接部基本對準,包括:使得所述第一對準焊接部與對應的第二對準焊接部彼此接觸,其中,所述第一對準焊接部與對應的第二對準焊二者的中心在所述互連板所處平面的正投影允許存在偏差。
- 如請求項1所述的方法,其中,所述互連板的所述第一對準焊接部的周邊分別預先形成有焊錫阱。
- 如請求項1所述的方法,其中,還包括:對所述互連板進行切割,以得到多個半導體元件,任一所述半導體元件對應至少一個所述半導體器件。
- 如請求項8所述的方法,其中,對所述互連板進行切割時,還切除至少一個對準焊點。
- 如請求項1所述的方法,其中,將所述至少一個半導體器件朝向所述互連板按壓時,採用壓平板對所述至少一個半導體器件進行按壓。
- 如請求項1所述的方法,其中,在所述對準焊點熔融或部分熔融、並且所述第一連接端子和/或所述第二連接端子處於熔融或部分熔融狀態時,將所述至少一個半導體器件朝向所述互連板按壓,以使得所述第一連接端子和對應的第二連接端子彼此結合成熔融或部分熔融狀態的互連焊點,包括: 在所述對準焊點凝固或基本凝固後,再次採用焊接工藝使得所述對準焊點熔融或部分熔融、並且使得所述第一連接端子和/或所述第二連接端子處於熔融或部分熔融狀態後,隨後對所述至少一個半導體器件進行按壓。
- 如請求項1所述的方法,其中,在所述對準焊點熔融或部分熔融、並且所述第一連接端子和/或所述第二連接端子處於熔融或部分熔融狀態時,將所述至少一個半導體器件朝向所述互連板按壓,以使得所述第一連接端子和對應的第二連接端子彼此結合成熔融或部分熔融狀態的互連焊點,包括: 在所述熔融或部分熔融狀態的對準焊點形成後,保持所述對準焊點處於熔融或部分熔融狀態,並使所述第一連接端子和/或所述第二連接端子處於熔融或部分熔融狀態,將所述至少一個半導體器件朝向所述互連板按壓。
- 一種半導體元件組裝方法,其中,包括; 提供第一半導體器件和至少一個第二半導體器件,其中,所述第一半導體器件的有源表面上形成多個第一連接端子和多個第一對準焊接部,所述至少一個第二半導體器件的有源表面上形成有多個第二連接端子和多個第二對準焊接部,所述第一連接端子和所述第二連接端子一一對應,所述第一對準焊接部和所述第二對準焊接部一一對應,任一所述第一連接端子與對應的第二連接端子的高度和小於任一第一對準焊接部和對應的第二對準焊接部的高度和; 將所述至少一個第二半導體器件放置在所述第一半導體器件上,使得所述第一對準焊接部與對應的第二對準焊接部基本對準; 採用焊接工藝使得所述第一對準焊接部和對應的第二對準焊接部彼此結合成熔融或部分熔融狀態的對準焊點,以使所述第一半導體器件和所述至少一個第二半導體器件精確對準,其中,所述第一連接端子和對應的第二連接端子之間留有間距; 在所述對準焊點熔融或部分熔融、並且所述第一連接端子和/或所述第二連接端子處於熔融或部分熔融狀態時,將所述至少一個第二半導體器件朝向所述第一半導體器件按壓,以使得所述第一連接端子和對應的第二連接端子彼此結合成熔融或部分熔融狀態的互連焊點; 在所述對準焊點和/或所述互連焊點凝固或基本凝固後解除對所述至少一個第二半導體器件的按壓。
- 如請求項13所述的方法,其中,所述第一對準焊接部和所述第二對準焊接部中的任一者具有焊接凸點的形態,另一者具有與所述焊接凸點對應的焊盤的形態;或者所述第一對準焊接部和所述第二對準焊接部均具有焊接凸點的形態。
- 如請求項14所述的方法,其中,所述焊接凸點由焊錫製成,且通過熔融焊錫來形成所述對準焊點。
- 如請求項13所述的方法,其中,所述第一連接端子和所述第二連接端子中任一者具有焊接凸點的形態,另一者具有與所述焊接凸點對應的焊盤的形態;或者所述第一連接端子和所述第二連接端子均具有焊接凸點的形態。
- 如請求項16所述的方法,其中,所述焊接凸點由焊錫製成,且通過熔融焊錫來形成所述互連焊點。
- 如請求項13所述的方法,其中,使得所述第一對準焊接部與對應的第二對準焊接部基本對準,包括:使得所述第一對準焊接部與對應的第二對準焊接部彼此接觸,其中,所述第一對準焊接部與對應的第二對準焊二者的中心在所述第一半導體器件的有源表面所處平面的正投影允許存在偏差。
- 如請求項13所述的方法,其中,將所述至少一個第二半導體器件朝向所述第一半導體器件按壓時,採用壓平板對所述至少一個第二半導體器件進行按壓。
- 如請求項13所述的方法,其中,在所述對準焊點熔融或部分熔融、並且所述第一連接端子和/或所述第二連接端子處於熔融或部分熔融狀態時,將所述至少一個第二半導體器件朝向所述第一半導體器件按壓,以使得所述第一連接端子和對應的第二連接端子彼此結合成熔融或部分熔融狀態的互連焊點,包括: 在所述對準焊點凝固或基本凝固後,再次採用焊接工藝使得所述對準焊點熔融或部分熔融、並且使得所述第一連接端子和/或所述第二連接端子處於熔融或部分熔融狀態後,對所述至少一個第二半導體器件進行按壓。
- 如請求項13所述的方法,其中,在所述對準焊點熔融或部分熔融、並且所述第一連接端子和/或所述第二連接端子處於熔融或部分熔融狀態時,將所述至少一個第二半導體器件朝向所述第一半導體器件按壓,以使得所述第一連接端子和對應的第二連接端子彼此結合成熔融或部分熔融狀態的互連焊點,包括: 在所述熔融或部分熔融狀態的對準焊點形成後,保持所述對準焊點處於熔融或部分熔融狀態,並使所述第一連接端子和/或所述第二連接端子處於熔融或部分熔融狀態,將所述至少一個第二半導體器件朝向所述第一半導體器件按壓。
- 一種半導體元件組裝方法,其中,包括: 提供互連板和至少一個半導體器件,其中,所述互連板上形成有多個第一連接端子和多個第一對準焊接部,任一所述半導體器件的有源表面上形成有多個第二連接端子和多個第二對準焊接部,所述第一連接端子和所述第二連接端子一一對應,所述第一對準焊接部和所述第二對準焊接部一一對應,任一所述第一連接端子與對應的第二連接端子的高度和小於任一第一對準焊接部和對應的第二對準焊接部的高度和; 將所述至少一個半導體器件放置在所述互連板上,使得所述第一對準焊接部與對應的第二對準焊接部基本對準; 採用焊接工藝使得所述第一對準焊接部和對應的第二對準焊接部彼此結合成熔融或部分熔融狀態的對準焊點,以使所述至少一個半導體器件精確對準,其中,所述第一連接端子和對應的第二連接端子之間留有間距; 在所述對準焊點熔融或部分熔融時,將所述至少一個半導體器件朝向所述互連板按壓,以使得所述第一連接端子和對應的第二連接端子經熱壓而綁定成互連凸點。
- 如請求項22所述的方法,其中,所述第一對準焊接部和所述第二對準焊接部中的任一者具有焊接凸點的形態,另一者具有與所述焊接凸點對應的焊盤的形態;或者所述第一對準焊接部和所述第二對準焊接部均具有焊接凸點的形態。
- 如請求項23所述的方法,其中,所述焊接凸點由焊錫製成,且通過熔融焊錫來形成所述對準焊點。
- 如請求項23所述的方法,其中,使得所述第一對準焊接部與對應的第二對準焊接部基本對準,包括:使得所述第一對準焊接部與對應的第二對準焊接部彼此接觸,其中,所述第一對準焊接部與對應的第二對準焊二者的中心在所述互連板所處平面的正投影允許存在偏差。
- 如請求項23所述的方法,其中,所述互連板的所述第一對準焊接部的周邊分別預先形成有焊錫阱。
- 如請求項23所述的方法,其中,還包括:對所述互連板進行切割,以得到多個半導體元件,任一所述半導體元件對應至少一個所述半導體器件。
- 如請求項23所述的方法,其中,對所述互連板進行切割時,還切除至少一個對準焊點。
- 如請求項23所述的方法,其中,將所述至少一個半導體器件朝向所述互連板按壓時,採用壓平板對所述至少一個半導體器件進行按壓。
- 如請求項23所述的方法,其中,在所述對準焊點熔融或部分熔融時,將所述至少一個半導體器件朝向所述互連板按壓,以使得所述第一連接端子和對應的第二連接端子經熱壓而綁定成互連凸點,包括: 在所述對準焊點凝固或基本凝固後,再次採用焊接工藝使得所述對準焊點熔融或部分熔融,隨後將所述至少一個半導體器件朝向所述互連板按壓。
- 如請求項23所述的方法,其中,在所述對準焊點熔融或部分熔融時,將所述至少一個半導體器件朝向所述互連板按壓,以使得所述第一連接端子和對應的第二連接端子經熱壓而綁定成互連凸點,包括: 在所述熔融或部分熔融狀態的對準焊點形成後,保持所述對準焊點處於熔融或部分熔融狀態,將所述至少一個半導體器件朝向所述互連板按壓。
- 一種半導體元件組裝方法,其中,包括: 提供第一半導體器件和至少一個第二半導體器件,其中,所述第一半導體器件的有源表面上形成多個第一連接端子和多個第一對準焊接部,所述至少一個第二半導體器件的有源表面上形成有多個第二連接端子和多個第二對準焊接部,所述第一連接端子和所述第二連接端子一一對應,所述第一對準焊接部和所述第二對準焊接部一一對應,任一所述第一連接端子與對應的第二連接端子的高度和小於任一第一對準焊接部和對應的第二對準焊接部的高度和; 將所述至少一個第二半導體器件放置在所述第一半導體器件上,使得所述第一對準焊接部與對應的第二對準焊接部基本對準; 採用焊接工藝使得所述第一對準焊接部和對應的第二對準焊接部彼此結合成熔融或部分熔融狀態的對準焊點,以使所述第一半導體器件和所述至少一個第二半導體器件精確對準,其中,所述第一連接端子和對應的第二連接端子之間留有間距; 在所述對準焊點熔融或部分熔融時,將所述至少一個第二半導體器件朝向所述第一半導體器件按壓,以使得所述第一連接端子和對應的第二連接端子經熱壓而綁定成互連凸點。
- 如請求項32所述的方法,其中,所述第一對準焊接部和所述第二對準焊接部中的任一者具有焊接凸點的形態,另一者具有與所述焊接凸點對應的焊盤的形態;或者所述第一對準焊接部和所述第二對準焊接部均具有焊接凸點的形態。
- 如請求項22所述的方法,其中,所述焊接凸點由焊錫製成,且通過熔融焊錫來形成所述對準焊點。
- 如請求項32所述的方法,其中,使得所述第一對準焊接部與對應的第二對準焊接部基本對準,包括:使得所述第一對準焊接部與對應的第二對準焊接部彼此接觸,其中,所述第一對準焊接部與對應的第二對準焊二者的中心在所述第一半導體器件的有源表面所處平面的正投影允許存在偏差。
- 如請求項32所述的方法,其中,將所述至少一個第二半導體器件朝向所述第一半導體器件按壓時,採用壓平板對所述至少一個第二半導體器件進行按壓。
- 如請求項32所述的方法,其中,在所述對準焊點熔融或部分熔融時,將所述至少一個第二半導體器件朝向所述第一半導體器件按壓,以使得所述第一連接端子和對應的第二連接端子經熱壓而綁定成互連凸點,包括: 在所述對準焊點凝固或基本凝固後,再次採用焊接工藝使得所述對準焊點熔融或部分熔融,隨後將所述至少一個第二半導體器件朝向所述第一半導體器件按壓。
- 如請求項32所述的方法,其中,在所述對準焊點熔融或部分熔融時,將所述至少一個第二半導體器件朝向所述第一半導體器件按壓,以使得所述第一連接端子和對應的第二連接端子經熱壓而綁定成互連凸點,包括: 在所述熔融或部分熔融狀態的對準焊點形成後,保持所述對準焊點處於熔融或部分熔融狀態,將所述至少一個第二半導體器件朝向所述第一半導體器件按壓。
- 一種半導體元件,其中,所述半導體元件如請求項1-38其中任一項所述的方法制得。
- 一種電子設備,其中,所述電子設備包括如請求項39所述的半導體元件。
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TW201133663A (en) * | 2009-07-17 | 2011-10-01 | Sumitomo Bakelite Co | Electronic component and method for manufacturing electronic component |
TW201344819A (zh) * | 2012-04-17 | 2013-11-01 | Asm Tech Singapore Pte Ltd | 半導體晶片的熱壓縮鍵合 |
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JPH11111771A (ja) * | 1997-10-07 | 1999-04-23 | Matsushita Electric Ind Co Ltd | 配線基板の接続方法、キャリア基板および配線基板 |
JPH11317468A (ja) * | 1998-05-06 | 1999-11-16 | Hitachi Ltd | 半導体装置及びその実装方法並びに半導体チップ及びその実装方法 |
JP2003031728A (ja) * | 2001-07-13 | 2003-01-31 | Alps Electric Co Ltd | Icチップおよびその取付構造 |
JP2004265888A (ja) * | 2003-01-16 | 2004-09-24 | Sony Corp | 半導体装置及びその製造方法 |
JP2004253598A (ja) * | 2003-02-20 | 2004-09-09 | Fujitsu Ltd | 電子部品の実装方法 |
JP2007189066A (ja) * | 2006-01-13 | 2007-07-26 | Murata Mfg Co Ltd | 電子部品の製造方法及び電子部品の基板集合体 |
JP2008171879A (ja) * | 2007-01-09 | 2008-07-24 | Nec Corp | プリント基板およびパッケージ実装構造 |
CN103327728A (zh) * | 2012-03-21 | 2013-09-25 | 鸿富锦精密工业(深圳)有限公司 | 印刷电路板 |
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TW201133663A (en) * | 2009-07-17 | 2011-10-01 | Sumitomo Bakelite Co | Electronic component and method for manufacturing electronic component |
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