WO2019118366A1 - Embedded vertical inductor in laminate stacked substrates - Google Patents

Embedded vertical inductor in laminate stacked substrates Download PDF

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Publication number
WO2019118366A1
WO2019118366A1 PCT/US2018/064782 US2018064782W WO2019118366A1 WO 2019118366 A1 WO2019118366 A1 WO 2019118366A1 US 2018064782 W US2018064782 W US 2018064782W WO 2019118366 A1 WO2019118366 A1 WO 2019118366A1
Authority
WO
WIPO (PCT)
Prior art keywords
laminate substrate
traces
vertical
vertical columns
inductor structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2018/064782
Other languages
English (en)
French (fr)
Inventor
Daniel Daeik KIM
Bonhoon Koo
Babak Nejati
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Priority to EP18829662.8A priority Critical patent/EP3724900A1/en
Priority to JP2020531599A priority patent/JP7442446B2/ja
Priority to CN201880080174.XA priority patent/CN111448626A/zh
Priority to SG11202004020TA priority patent/SG11202004020TA/en
Priority to KR1020207016813A priority patent/KR102722208B1/ko
Publication of WO2019118366A1 publication Critical patent/WO2019118366A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00Fixed inductances of the signal type
    • H01F17/0006Printed inductances
    • H01F17/0013Printed inductances with stacked layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00Details of transformers or inductances, in general
    • H01F27/34Special means for preventing or reducing unwanted electric or magnetic effects, e.g. no-load losses, reactive currents, harmonics, oscillations, leakage fields
    • H01F27/36Electric or magnetic shields or screens
    • H01F27/363Electric or magnetic shields or screens made of electrically conductive material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/02Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
    • H01F41/04Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
    • H01F41/041Printed circuit coils
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40Circuits
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/14Structural association of two or more printed circuits
    • H05K1/144Stacked arrangements of planar printed circuit boards
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/36Assembling printed circuits with other printed circuits
    • H05K3/368Assembling printed circuits with other printed circuits parallel to each other
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00Fixed inductances of the signal type
    • H01F17/0006Printed inductances
    • H01F17/0013Printed inductances with stacked layers
    • H01F2017/002Details of via holes for interconnecting the layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00Fixed inductances of the signal type
    • H01F17/0006Printed inductances
    • H01F2017/008Electric or magnetic shielding of printed inductances
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00Details of transformers or inductances, in general
    • H01F27/34Special means for preventing or reducing unwanted electric or magnetic effects, e.g. no-load losses, reactive currents, harmonics, oscillations, leakage fields
    • H01F27/36Electric or magnetic shields or screens
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02Transmitters
    • H04B1/04Circuits

Definitions

  • the present disclosure generally relates to inductors, and more particularly to an embedded vertical inductor in laminate stacked substrates for high-quality (Q)-factor radio frequency (RF) applications.
  • Q high-quality
  • RF radio frequency
  • Mobile radio frequency (RF) chip designs e.g., mobile RF transceivers
  • RF radio frequency
  • the design complexity of mobile RF transceivers is complicated by added circuit functions to support communication enhancements, such as carrier aggregation. Further design challenges for mobile RF transceivers include analog/RF performance considerations, including mismatch, noise and other performance considerations.
  • the design of mobile RF transceivers includes the use of passive devices, such as inductors and capacitors, to, for example, suppress resonance, and/or to perform filtering, bypassing and coupling.
  • FIGURE 1 is a diagram of a radio frequency (RF) communication system in accordance with an aspect of the disclosure.
  • FIGURE 2A is a perspective view of a vertical inductor structure in laminate stacked substrates according to aspects of the present disclosure.
  • FIGURE 4A shows a perspective view of another vertical inductor structure
  • FIGURE 4B shows a cross-sectional view taken generally along the line A-A of FIGURE 4A, showing the vertical inductor structure embedded in laminate stacked substrates according to further aspects of the present disclosure.
  • Mobile RF transceivers have migrated to a deep sub-micron process node due to cost and power consumption considerations.
  • the design complexity of mobile RF transceivers is complicated by added circuit functions to support communication enhancements, such as carrier aggregation. Further design challenges for mobile RF transceivers include analog/RF performance considerations, including mismatch, noise and other performance considerations.
  • the design of mobile RF transceivers includes the use of passive devices, such as inductors and capacitors, to, for example, suppress resonance, and/or to perform filtering, bypassing and coupling.
  • passive devices such as inductors and capacitors
  • the improved inductor design is a vertical inductor embedded in multiple laminate stacked substrates. Embedding the vertical inductor in two laminate substrates provides flexibility to achieve a targeted inductor performance at a reduced inductor footprint.
  • Each laminate substrate may have any number of layers, for example between two layers and ten layers, and the vertical height of the inductor structure may range between 50 pm and 600 pm and be optimized to achieve a particular Q-factor.
  • layers in the first laminate substrate may provide a desired separation between the inductor and the ground plane of the substrate, so that the magnetic field of the inductor is not compressed, thereby improving the Q-factor of the inductor.
  • An improved vertical inductor structure having an area of less than 0.6 mm 2 may have a Q-factor of up to 40 for 2.5 nH at 800 MHz and 85 ⁇ .
  • the RF communications system 100 includes a WiFi module 170 having a first duplexer 190-1 and an RF front-end module 150 including a second duplexer 190-2 for a chipset 160 to provide carrier aggregation according to an aspect of the present disclosure.
  • the WiFi module 170 includes the first diplexer 190-1 communicably coupling an antenna 192 to a wireless local area network module (e.g., WLAN module 172).
  • the RF front-end module 150 includes the second diplexer 190-2 communicably coupling an antenna 194 to a wireless transceiver (WTR) 120 through the duplexer 180.
  • WTR wireless transceiver
  • the wireless transceiver 120 and the WLAN module 172 of the WiFi module 170 are coupled to a modem (mobile station modem (MSM), e.g., baseband modem) 130 that is powered by a power supply 152 through a power management integrated circuit (PMIC) 156.
  • MSM mobile station modem
  • PMIC power management integrated circuit
  • the chipset 160 also includes capacitors 162 and 164, as well as an inductor(s) 166 to provide signal integrity.
  • the PMIC 156, the modem 130, the wireless transceiver 120, and the WLAN module 172 each include capacitors (e.g., 158, 132,
  • the RF communications system 100 may also include a power amplifier (PA) integrated with the duplexer 180 (e.g., a PAMID module).
  • PA power amplifier
  • the duplexer 180 may filter the input/output signals according to a variety of different parameters, including frequency, insertion loss, rejection, or other like parameters.
  • the duplexer 180 may be integrated with an embedded vertical inductor in laminate stacked substrates, for example, as shown in FIGURES 2A-5B.
  • the first laminate substrate 216 and the second laminate substrate 218 may include a plurality of traces 220(1) and 220(2), respectively, that form part of the vertical inductor structure 210.
  • Each of the traces 220(1), 220(2) may be provided in a single layer 222(1), 222(2), respectively, of the respective first laminate substrate 216 and the second laminate substrate 218.
  • the traces 220(1) of the first laminate substrate 216 may form the bottom traces of the vertical inductor structure 210
  • the traces 220(2) of the second laminate substrate 218 may form the top traces of the vertical inductor structure 210.
  • the traces 220(1), 220(2) may be comprised of copper or any other conductive material.
  • the first laminate substrate 216 may further include vertical columns 224(1), 224(2) that are coupled to the traces 220(1) at a respective first end 226 and second end 228.
  • the second laminate substrate 218 may include vertical columns 224(3), 224(4) that are coupled to the traces 220(2) at the respective first end 226 and second end 228.
  • the vertical columns 224(1 )-224(4) may be comprised of stacked, metal-filled vias 230 and capture pads 232. Copper is one conductive metal that may be used to form the metal-filled vias 230 and capture pads 232 of the vertical columns 224(1)- 224(4), however, other conductive materials may also be used.
  • the vertical inductor structure 210 may
  • each of the first laminate substrate 216 and the second laminate substrate 218 may be provided with any multiple number of layers.
  • the first laminate substrate 216 includes 4 layers that separate the bottom traces 220(1) of the vertical inductor structure 210 from the module ground 236.
  • the distance between the bottom traces 220(1) of the vertical inductor structure 210 and the module ground 236 maybe adjusted by increasing or decreasing the number of layers provided therebetween to prevent magnetic field compression and coupling from the module ground 236.
  • FIGURES 2B and 2C is also shown as having 4 layers that separate the top traces 220(2) of the vertical inductor structure 210 from the molding 238.
  • These layers of the second laminate substrate 218 along with the molding 238 may provide a separation between the top traces 220(2) of the vertical inductor structure 210 and the module shield layer 240 to also prevent magnetic field compression and coupling from the module shield.
  • the second laminate substrate 218 may be provided with fewer or more layers above the top traces 220(2) of the vertical inductor structure 210, and instead the thickness of the molding 238 may be increased or decreased to achieve the desired separation from the module shield layer 240.
  • aspects of the present disclosure provide the multi-substrate vertical inductor structure 210 with a flexible design that has a smaller footprint than a comparably performing single substrate inductor or one formed in a through glass via (TGV) or through substrate via (TSV) module.
  • the height of vertical columns 224(l)-224(4) may be anywhere in the range of 50 pm to 600 pm to achieve a target inductor performance.
  • the additional layers or molding 238 may be used to distance the traces 220(1), 220(2) of the vertical inductor structure 210 from the module ground 236 and the module shield layer 240.
  • FIGURES 3A shows a perspective view of a vertical inductor structure 310 according to other aspects of the present disclosure
  • FIGURE 3B shows a cross- sectional view of the vertical inductor structure 310 embedded in laminate stacked substrates.
  • the vertical inductor structure 310 is similar to the vertical inductor structure 210 of FIGURES 2A-2D, except that the vertical inductor structure 310 includes two layers of traces in each laminate substrate.
  • the vertical inductor structure 310 may include a first portion 312 formed in a first laminate substrate 316 and a second portion 314 formed in a second laminate substrate 318.
  • Each of the first laminate substrate 316 and the second laminate substrate 318 may have any number of a plurality of layers, for example, between 2 layers and 10 layers, and need not have the same number of layers as the other laminate substrate.
  • first laminate substrate 316 and the second laminate substrate 318 may
  • first traces 320(1) and 320(2) include a plurality of first traces 320(1) and 320(2), respectively, and a plurality of second traces 320(3) and 320(4), respectively, that form part of the vertical inductor structure 310.
  • first traces 320(1), 320(2) may be provided in a single layer 322(1), 322(2), respectively, of the respective first laminate substrate 316 and the second laminate substrate 318.
  • second traces 320(3), 320(4) may be provided in an another single layer 322(3), 322(4), respectively, of the respective first laminate substrate 316 and the second laminate substrate 318.
  • the traces 320(1)- 320(4) may be comprised of copper or any other conductive material.
  • the first laminate substrate 316 may further include vertical columns 324(1) that are coupled to the first traces 320(1) and the second traces 320(3) at a first end 326, and vertical columns 324(2) that are coupled to the first traces 320(1) and the second traces 320(3) at a second end 328.
  • the second laminate substrate 318 may include vertical columns 324(3) that are coupled to the first traces 320(2) and the second traces 320(4) at the first end 326, and vertical columns 324(4) that are coupled to the first traces 320(2) and the second traces 320(4) at the second end 328.
  • the vertical columns 324(1 )-324(4) may be made of copper or any other conductive material and may be comprised of stacked, metal-filled vias and capture pads.
  • the second laminate substrate 318 may be mounted on the first laminate
  • each of the vertical columns 324(1) of the first laminate substrate 316 may be electrically and mechanically coupled to a respective vertical column 324(3) of the second laminate substrate 318 by a bump 334.
  • each of the vertical columns 324(2) of the first laminate substrate 316 may be electrically and mechanically coupled to a respective vertical column 324(4) of the second laminate substrate 318 by a bump 334.
  • the bumps 334 may be solder balls and are composed of a conductive material. Alternatively, the bumps 334 may be other types of bumps that provide electrical and mechanical connections, such as flip-chip bumps, ball grid array bumps, solder on pads (SOP), or copper pillars.
  • inductor structure 310 may also be provided with an optional module ground 336 from the bottom layer of the first laminate substrate 316, molding 338 and a module shield layer 340.
  • first laminate substrate 316 may be provided with additional layers below the first traces 320(1) to provide a desired distance between the module ground 336 and the vertical inductor structure 310.
  • second laminate substrate 318 may be provided with additional layers above the first traces 320(2) and/or the thickness of the molding 338 may be increased/decreased to adjust a distance between the vertical inductor structure 310 and the module shield layer 340.
  • FIGURE. 4A shows a perspective view of a vertical inductor structure 410
  • the second laminate substrate 318 may include metal-filled vias 442(2) that couple the first traces 320(2) of the second laminate substrate 318 to the second traces 320(4).
  • the metal- filled vias 442(1), 442(2) are coupled to the respective first traces 320(1), 320(2) and the respective second traces 320(3), 320(4) between the first end 326 and the second end 328.
  • the metal-filled vias 442(1), 442(2) improve the inductance of the traces 320(1)- 320(4). Any number of metal-filled vias 442(1), 442(2) may be provided along the traces 320(l)-320(4).
  • the vertical inductor structure 410 is shown in FIGURE 4B having 2 metal-filled vias 442(1), 442(2) between the first traces 320(1), 320(2) and the second traces 320(3), 320(4), more than 2 metal-filled vias 442(1), 442(2) may be provided between the traces 320(l)-320(4).
  • the vertical inductor structure 410 may include a single metal-filled via 442(1), 442(2) may between the first traces 320(1), 320(2) and the second traces 320(3), 320(4).
  • the metal- filled vias 442(1), 442(2) may be composed of copper or any other conductive material.
  • FIGURE 5A shows a perspective view of a vertical inductor structure 510
  • FIGURE 4B shows a cross-sectional view of the vertical inductor structure 510 embedded in laminate stacked substrates.
  • the vertical inductor structure 510 is very similar to the vertical inductor structure 410 of FIGURES 4A-4B, and, for simplicity, the same reference numerals will again be used for like parts.
  • the difference between the two vertical inductor structures is that the vertical inductor structure 510 may further include additional vertical columns to couple the first traces 320(1) and the second traces 320(3) of the first laminate substrate 316 to the first traces 320(2) and the second traces 320(4) of the second laminate substrate 318.
  • the first laminate substrate 316 may further include vertical columns 544(1), 544(2).
  • the vertical columns 544(1) are coupled to the traces 320(1), 320(3) proximate the first end 326, while the vertical columns 544(2) are coupled to the traces 320(1), 320(3) proximate the second end 328.
  • the second laminate substrate 318 may include vertical columns 544(3), 544(4) that are coupled to the traces 320(2), 320(4) proximate the first end 326 and the second end 328, respectively.
  • the vertical columns 544(l)-544(4) may be comprised of stacked, metal-filled vias 330 and capture pads 332.
  • Copper is one conductive metal that may be used to form the metal-filled vias 330 and capture pads 332 of the vertical columns 544(1 )-544(4), however, other conductive materials may also be used.
  • the vertical columns 544(1 )-544(4) reduce the resistance in the vertical portion of the vertical inductor structure 510.
  • the second laminate substrate 318 may be mounted on the first laminate substrate 316 to complete the vertical inductor structure 510.
  • bumps 334 may electrically and mechanically couple each of the vertical columns 324(1), 544(1) of the first laminate substrate 316 to a respective vertical column 324(3), 544(3) of the second laminate substrate 318.
  • bumps 334 may electrically and mechanically couple each of the vertical columns 324(2), 544(2) of the first laminate substrate 316 to a respective vertical column 324(4), 544(4) of the second laminate substrate 318.
  • the bumps 334 may be solder balls and composed of a conductive material.
  • the bumps 234 may be other types of bumps that provide electrical and mechanical connections, such as flip-chip bumps, ball grid array bumps, solder on pads (SOP), or copper pillars.
  • FIGURE 6 is a flow diagram illustrating a method 600 of fabricating an
  • a first laminate substrate 216, 316 forming a first portion of the vertical inductor structure is provided.
  • the first laminate substrate may be the first laminate substrate 216 of the vertical inductor structure 210 of FIGURES 2A-2D with a single layer of traces 220(1).
  • the first laminate substrate 316 may be provided with any one of the following: two layers of traces 320(1), 320(3), as in the vertical inductor structure 310 of FIGURES 3A-3B; two layers of traces 320(1), 320(3) and metal-filled vias 442(1) coupling the first and second traces 320(1) and 320(3), respectively, as in the vertical inductor structure 410 of FIGURES 4A-4B; and two layers of traces 320(1), 320(3), metal-filled vias 442(1), and additional vertical columns 544(1), 544(2), as in the vertical inductor structure 510 of FIGURES 5A-5B.
  • the first laminate structure may also be provided with an optional module ground 236, 336.
  • a second laminate substrate 218, 318 may be provided on the first laminate substrate 216, 316.
  • the second laminate substrate 218, 318 forms a second portion of the vertical inductor structure.
  • the second laminate substrate may be the second laminate substrate 218 of the vertical inductor structure 210 of FIGURES 2A-2D with a single layer of traces 220(2).
  • molding 238, 338 is provided over the first laminate substrate 216, 316 and around the second laminate substrate 218, 318.
  • the molding also fills the gap between the first laminate substrate 216, 316 and the second laminate substate 218, 318.
  • the molding 238, 338 is composed of a polymer material.
  • FIGURE 7 is a block diagram showing an exemplary wireless communication system 700 in which an aspect of the disclosure may be advantageously employed.
  • FIGURE 7 shows three remote units 720, 730 and 750 and two base stations 740.
  • Remote units 720, 730 and 750 each include IC devices 725A, 725C, and 725B having a RF front-end module that includes the disclosed inductors.
  • RF front-end module that includes the disclosed inductors.
  • other devices may also include the disclosed inductors, such as the base stations, switching devices, and network equipment including a RF front-end module.
  • FIGURE 7 shows forward link signals 780 from the base station 740 to the remote units 720, 730 and 750 and reverse link signals 790 from the remote units 720, 730 and 750 to the base stations 740.
  • a remote unit 720 is shown as a mobile telephone
  • remote unit 730 is shown as a portable computer
  • remote unit 750 is shown as a fixed location remote unit in a wireless local loop system.
  • the remote units 720, 730 and 750 may be a mobile phone, a hand-held personal communications systems (PCS) unit, a portable data unit such as a personal digital assistant (PDA), a GPS enabled device, a navigation device, a set top box, a music player, a video player, an entertainment unit, a fixed location data unit such as a meter reading equipment, or a communications device, including an RF front-end module that stores or retrieves data or computer instructions, or combinations thereof.
  • FIGURE 7 illustrates remote units according to the aspects of the disclosure, the disclosure is not limited to these exemplary illustrated units. Aspects of the disclosure may be suitably employed in many devices, which include the disclosed devices.
  • FIGURE 8 is a block diagram illustrating a design workstation used for circuit, layout, and logic design of a semiconductor component, such as the inductors disclosed above.
  • a design workstation 800 includes a hard disk 802 containing operating system software, support files, and design software such as Cadence or OrCAD.
  • the design workstation 800 also includes a display 804 to facilitate design of a circuit 806 or a semiconductor component 808 such as an inductor.
  • a storage medium 810 is provided for tangibly storing the design of the circuit 806 or the semiconductor component 808.
  • the design of the circuit 806 or the semiconductor component 808 may be stored on the storage medium 810 in a file format such as GDSII or GERBER.
  • the storage medium 810 may be a CD-ROM, DVD, hard disk, flash memory, or other appropriate device.
  • the design workstation 800 includes a drive apparatus 812 for accepting input from or writing output to the storage medium 810.
  • the data may further include logic verification data such as timing diagrams or net circuits associated with logic
  • a machine-readable medium tangibly embodying instructions may be used in implementing the methodologies described herein.
  • software codes may be stored in a memory and executed by a processor unit.
  • Memory may be implemented within the processor unit or external to the processor unit.
  • the term“memory” refers to types of long term, short term, volatile, nonvolatile, or other memory and is not to be limited to a particular type of memory or number of memories, or type of media upon which memory is stored.
  • the functions may be stored as one or more instructions or code on a computer-readable medium.
  • instructions and/or data may be provided as signals on transmission media included in a communication apparatus.
  • a communications apparatus may include a transceiver having signals indicative of instructions and data. The instructions and data are configured to cause one or more processors to implement the functions outlined in the claims.
  • DSP digital signal processor
  • ASIC application specific integrated circuit
  • FPGA field programmable gate array
  • a general- purpose processor may be a microprocessor, but in the alternative, the processor may be any conventional processor, controller, microcontroller, or state machine.
  • a processor may also be implemented as a combination of computing devices, e.g., a combination of a DSP and a microprocessor, multiple microprocessors, one or more microprocessors in conjunction with a DSP core, or any other such configuration.
  • a software module may reside in RAM, flash memory, ROM, EPROM, EEPROM, registers, hard disk, a removable disk, a CD-ROM, or any other form of storage medium known in the art.
  • An exemplary storage medium is coupled to the processor such that the processor can read information from, and write information to, the storage medium.
  • the storage medium may be integral to the processor.
  • the processor and the storage medium may reside in an ASIC.
  • the ASIC may reside in a user terminal.
  • the processor and the storage medium may reside as discrete components in a user terminal.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Manufacturing Cores, Coils, And Magnets (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Combinations Of Printed Boards (AREA)
  • Semiconductor Integrated Circuits (AREA)
PCT/US2018/064782 2017-12-15 2018-12-10 Embedded vertical inductor in laminate stacked substrates Ceased WO2019118366A1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP18829662.8A EP3724900A1 (en) 2017-12-15 2018-12-10 Embedded vertical inductor in laminate stacked substrates
JP2020531599A JP7442446B2 (ja) 2017-12-15 2018-12-10 ラミネート積層基板における埋め込み垂直インダクタ
CN201880080174.XA CN111448626A (zh) 2017-12-15 2018-12-10 层压堆叠基板中的嵌入式垂直电感器
SG11202004020TA SG11202004020TA (en) 2017-12-15 2018-12-10 Embedded vertical inductor in laminate stacked substrates
KR1020207016813A KR102722208B1 (ko) 2017-12-15 2018-12-10 라미네이트 적층 기판들에 임베딩된 수직 인덕터

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201762599397P 2017-12-15 2017-12-15
US62/599,397 2017-12-15
US16/210,594 US11817239B2 (en) 2017-12-15 2018-12-05 Embedded vertical inductor in laminate stacked substrates
US16/210,594 2018-12-05

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WO2019118366A1 true WO2019118366A1 (en) 2019-06-20

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EP (1) EP3724900A1 (https=)
JP (1) JP7442446B2 (https=)
KR (1) KR102722208B1 (https=)
CN (1) CN111448626A (https=)
SG (1) SG11202004020TA (https=)
TW (1) TWI837106B (https=)
WO (1) WO2019118366A1 (https=)

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