WO2019111782A1 - Capteur magnétique - Google Patents

Capteur magnétique Download PDF

Info

Publication number
WO2019111782A1
WO2019111782A1 PCT/JP2018/043774 JP2018043774W WO2019111782A1 WO 2019111782 A1 WO2019111782 A1 WO 2019111782A1 JP 2018043774 W JP2018043774 W JP 2018043774W WO 2019111782 A1 WO2019111782 A1 WO 2019111782A1
Authority
WO
WIPO (PCT)
Prior art keywords
insulating layer
magnetic
viewed
magnetic member
direction orthogonal
Prior art date
Application number
PCT/JP2018/043774
Other languages
English (en)
Japanese (ja)
Inventor
智彦 中川
Original Assignee
株式会社村田製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社村田製作所 filed Critical 株式会社村田製作所
Publication of WO2019111782A1 publication Critical patent/WO2019111782A1/fr

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Definitions

  • the present invention relates to a magnetic sensor, and more particularly to a magnetic sensor including a magnetoresistive element.
  • Patent Document 1 Japanese Patent Application Laid-Open No. 2013-44641
  • Patent Document 2 International Publication No. 2015/182365
  • Patent Document 3 International Publication No. 2016/013345
  • Patent Document 4 JP-A-2017-166925
  • Patent Document 6 JP-A-2016-173317
  • the magnetic sensors described in Patent Document 1 are connected to each other to form a bridge circuit, and each of a first magnetoresistive element, a second magnetoresistive element, a third magnetoresistive element, and a fourth magnetic element formed in a meander shape.
  • a resistive element is provided.
  • the surfaces of the first magnetoresistive element, the second magnetoresistive element, the third magnetoresistive element, and the fourth magnetoresistive element are covered with an insulating film.
  • a magnetic flux collecting film made of a magnetic material is formed on the surfaces of the third magnetoresistive element and the fourth magnetoresistive element, which are so-called fixed resistors, with an insulating film interposed therebetween.
  • the magnetic sensor described in Patent Document 2 and Patent Document 3 includes a first magnetoresistive element and a second magnetoresistive element having a smaller rate of change in resistance than the first magnetoresistive element.
  • the first magnetoresistance element which is a so-called magnetosensitive element, includes a pattern arranged concentrically.
  • the magnetic sensor described in Patent Document 4 includes a semiconductor substrate provided with a plurality of Hall elements, and a magnetic body having a magnetic amplification function provided on the semiconductor substrate.
  • An underlayer serving as an underlayer of a magnetic substance is provided on a semiconductor substrate.
  • the underlayer has a coefficient of thermal expansion different from that of the plurality of Hall elements.
  • the underlayer has an area that at least partially covers the areas of the plurality of Hall elements.
  • the magnetic body has an area larger than the area of the underlayer.
  • the magnetic sensor described in Patent Document 5 includes a semiconductor substrate provided with a plurality of Hall elements, and a magnetic body having a magnetic focusing function provided on the semiconductor substrate.
  • the outer peripheral portion defining the outer cross-sectional shape of the magnetic body on the semiconductor substrate has a portion having a curved shape in at least a part of the outer peripheral portion and a portion substantially parallel to the semiconductor substrate. At least a portion of the nonmagnetic substance is embedded inside the magnetic body.
  • the magnetic sensor described in Patent Document 6 includes a Hall element provided on a semiconductor substrate, and a magnetic body having a magnetic amplification function provided on the semiconductor substrate and at least partially covering each of the Hall elements. Equipped with The magnetic body is provided with a slit or a slot.
  • each of the first magnetoresistance element and the second magnetoresistance element which are so-called magnetosensitive elements, includes a meander-like pattern, and therefore, the isotropy of detection of the horizontal magnetic field Is low.
  • the first magnetoresistive element since the first magnetoresistive element includes a pattern in which the first magnetoresistive elements are arranged concentrically, the isotropic property of detection of the horizontal magnetic field is high, but the weak vertical It can not detect the magnetic field.
  • Patent Document 4 The magnetic sensors described in Patent Document 4, Patent Document 5 and Patent Document 6 are magnetic sensors provided with Hall elements, and it is not considered to detect a horizontal magnetic field and a vertical magnetic field using a magnetoresistive element.
  • the present invention has been made in view of the above problems, and a magnetoresistance element is used to achieve high isotropy of detection of a horizontal magnetic field and to detect a weak vertical magnetic field, and a magnetoresistance element. It is an object of the present invention to provide a magnetic sensor capable of suppressing a decrease in output accuracy due to a stress acting on a magnetoresistive element from a structure provided above.
  • a magnetic sensor includes a first magnetoresistance element, a second magnetoresistance element electrically connected to the first magnetoresistance element to form a bridge circuit, a first magnetoresistance element, and a first magnetoresistance element.
  • at least the first magnetic member among the second magnetic members different from the first magnetic member is provided to cover the second conductor portion.
  • the first magnetoresistive element has at least the outer periphery of the outer periphery and the inner periphery.
  • the first magnetic member is located in an area inside the outer peripheral edge of the first magnetoresistive element as viewed in the direction orthogonal to the insulating layer.
  • the second magnetoresistive element is located in a region inside the inner peripheral edge of the first magnetoresistive element and viewed from the direction perpendicular to the insulating layer, and is covered with the first magnetic member or the first magnetoresistive element
  • the second magnetic member is located in a region outside the outer peripheral edge of the element.
  • the first conductor portion is provided with a through groove or a through hole penetrating in a direction orthogonal to the insulating layer.
  • the first magnetic member is located along the through groove or the through hole when viewed in the direction orthogonal to the insulating layer.
  • the through hole is provided at the center of the first conductor portion when viewed in the direction orthogonal to the insulating layer.
  • the through holes are provided in a circular shape when viewed in the direction orthogonal to the insulating layer.
  • the through groove when viewed in the direction orthogonal to the insulating layer, passes through the center of the first conductor portion.
  • the through groove extends in a straight line when viewed in the direction orthogonal to the insulating layer.
  • the first conductor portion is further provided with another penetration groove penetrating in the direction orthogonal to the insulating layer.
  • the other through groove intersects the center of the first groove with the through hole when viewed in the direction perpendicular to the insulating layer.
  • the other through grooves extend in a straight line when viewed in the direction orthogonal to the insulating layer.
  • a magnetic sensor includes a first magnetoresistance element, a second magnetoresistance element electrically connected to the first magnetoresistance element to form a bridge circuit, a first magnetoresistance element, and a first magnetoresistance element.
  • the first magnetoresistive element has at least the outer periphery of the outer periphery and the inner periphery.
  • the first magnetic member is located in an area inside the outer peripheral edge of the first magnetoresistive element as viewed in the direction orthogonal to the insulating layer.
  • the second magnetoresistive element is located in a region inside the inner peripheral edge of the first magnetoresistive element and viewed from the direction perpendicular to the insulating layer, and is covered with the first magnetic member or the first magnetoresistive element
  • the second magnetic member is located in a region outside the outer peripheral edge of the element.
  • the first magnetic member is provided with a through groove or a through hole penetrating in a direction orthogonal to the insulating layer.
  • the through hole is provided at the center of the first magnetic member as viewed in the direction orthogonal to the insulating layer.
  • the through holes are provided in a circular shape when viewed in the direction orthogonal to the insulating layer.
  • the through groove when viewed in the direction orthogonal to the insulating layer, passes through the center of the first magnetic member.
  • the through groove extends in a straight line when viewed in the direction orthogonal to the insulating layer.
  • another through groove is further provided in the first magnetic member in a direction perpendicular to the insulating layer.
  • the other through groove intersects the center of the first magnetic member with the through groove when viewed in the direction orthogonal to the insulating layer.
  • the other through grooves extend in a straight line when viewed in the direction orthogonal to the insulating layer.
  • the thickness of the first magnetic member is x ⁇ m
  • the first magnetic member is located concentrically with the outer peripheral edge of the first magnetoresistive element as viewed in the direction orthogonal to the insulating layer.
  • the second magnetoresistive element is covered with the first magnetic member and located in a region inside the inner peripheral edge of the first magnetoresistive element when viewed in the direction orthogonal to the insulating layer.
  • the first magnetic member is located in a region including the region on the inner peripheral edge of the first magnetoresistance element and the region inside the inner peripheral edge as viewed in the direction orthogonal to the insulating layer.
  • the second magnetoresistive element is covered with the first magnetic member and located in a region inside the inner peripheral edge of the first magnetoresistive element when viewed in the direction orthogonal to the insulating layer.
  • the first magnetic member covers only the second magnetoresistive element of the first magnetoresistive element and the second magnetoresistive element as viewed in the direction perpendicular to the insulating layer.
  • the second magnetoresistive element is located at a position 7 ⁇ m away from the center of the first magnetic member from the outer peripheral edge of the first magnetic member as viewed in the direction orthogonal to the insulating layer. Is located in the area.
  • the second magnetoresistive element is covered with the second magnetic member and located in a region outside the outer peripheral edge of the first magnetoresistive element when viewed in the direction orthogonal to the insulating layer.
  • the first magnetic member covers only a part of the first magnetoresistance element of the first and second magnetoresistance elements when viewed in the direction perpendicular to the insulating layer.
  • the second magnetic member covers only the second magnetoresistive element of the first magnetoresistive element and the second magnetoresistive element as viewed from the direction perpendicular to the insulating layer.
  • the second magnetoresistive element is located at a position 7 ⁇ m away from the center of the second magnetic member from the outer peripheral edge of the second magnetic member as viewed in the direction orthogonal to the insulating layer. Is located in the area.
  • the first magnetoresistive element includes a plurality of first unit patterns concentrically arranged and connected to each other when viewed in the direction orthogonal to the insulating layer.
  • a magnetic sensor includes a magnetosensitive element, an insulating layer covering the magnetosensitive element, a first conductor portion located on the insulating layer, and an insulating layer located on the first conductor portion And a first magnetic member covering the first conductor as viewed in the direction orthogonal to the layer.
  • the first conductor portion is provided with a through groove or a through hole penetrating in a direction orthogonal to the insulating layer.
  • the first magnetic member is located along the through groove or the through hole when viewed in the direction orthogonal to the insulating layer.
  • the magnetosensitive element has an outer peripheral edge.
  • the first magnetic member is located in an area inside the outer peripheral edge of the magnetosensitive element when viewed in the direction orthogonal to the insulating layer.
  • a magnetoresistive element it is possible to use a magnetoresistive element to achieve high isotropy of detection of a horizontal magnetic field and also to detect a weak vertical magnetic field, and to provide magnetoresistive resistance from a structure provided above the magnetoresistive element. It can suppress that the output accuracy of a magnetic sensor falls by the stress which acts on an element.
  • FIG. 1 It is a perspective view which shows the structure of the magnetic sensor which concerns on Embodiment 1 of this invention. It is sectional drawing which looked at the magnetic sensor of FIG. 1 from the II-II line arrow direction. It is the top view which looked at the magnetic sensor of FIG. 1 from the arrow III direction. It is the top view which looked at the magnetic sensor of FIG. 1 from the arrow IV direction. It is an equivalent circuit schematic of the magnetic sensor which concerns on Embodiment 1 of this invention. It is sectional drawing which shows the laminated structure of the connection part of the magnetoresistive element and wiring in the circuit board of the magnetic sensor which concerns on Embodiment 1 of this invention.
  • FIG. 7 is a flux diagram showing a magnetic flux density distribution when a perpendicular magnetic field is applied to the magnetic sensor according to Experimental Example 1.
  • FIG. 6 is a flux diagram showing a magnetic flux density distribution when a horizontal magnetic field is applied to the magnetic sensor according to Experimental Example 1.
  • the thickness of the first magnetic member given to the relationship between the distance in the horizontal direction from the outer peripheral edge of the first magnetic member and the magnetic field strength in the horizontal direction when the vertical magnetic field is applied to the magnetic sensor according to Experimental Example 2 Is a graph showing the effect of It is a graph which shows the relationship between the distance of the horizontal direction from the outer periphery of the 1st magnetic member to which the magnetic field intensity of the horizontal direction becomes 1/3 of a peak value to the outside, and the thickness of the 1st magnetic member. It is a perspective view which shows the structure of the magnetic sensor which concerns on Embodiment 2 of this invention.
  • FIG. 15 is a cross-sectional view of the magnetic sensor of FIG. 14 as viewed in the arrow direction of the XV-XV line.
  • FIG. 14 It is the top view which looked at the magnetic sensor of FIG. 14 from the arrow XVI direction. It is a perspective view which shows the structure of the magnetic sensor which concerns on Embodiment 3 of this invention.
  • FIG. 18 is a cross-sectional view of the magnetic sensor of FIG. 17 as viewed in the direction of arrows XVIII-XVIII. It is the top view which looked at the magnetic sensor of FIG. 17 from the arrow XIX direction. It is a perspective view which shows the structure of the magnetic sensor which concerns on Embodiment 4 of this invention.
  • FIG. 21 is a cross-sectional view of the magnetic sensor of FIG. 20 as viewed in the direction of the arrows along line XXI-XXI.
  • FIG. 26 is a cross-sectional view of the magnetic sensor of FIG. 25 as viewed in the direction of arrows XXVI-XXVI. It is the top view which looked at the magnetic sensor of FIG. 25 from the arrow XXVII direction. It is the top view which looked at the magnetic sensor of FIG.
  • FIG. 1 is a perspective view showing the configuration of a magnetic sensor according to Embodiment 1 of the present invention.
  • FIG. 2 is a cross-sectional view of the magnetic sensor of FIG. 1 as viewed in the direction of arrows II-II.
  • FIG. 3 is a plan view of the magnetic sensor of FIG. 1 as viewed in the direction of arrow III.
  • FIG. 4 is a plan view of the magnetic sensor of FIG. 1 as viewed in the direction of arrow IV.
  • FIG. 5 is an equivalent circuit diagram of the magnetic sensor according to the first embodiment of the present invention.
  • the width direction of the circuit board 100 described later is shown as the X-axis direction, the length direction of the circuit board 100 as the Y-axis direction, and the thickness direction of the circuit board 100 as the Z-axis direction.
  • the outer edge of the first magnetic member to be described later is indicated by a dotted line.
  • illustration of a differential amplifier, a temperature compensation circuit, and the like, which will be described later, is omitted.
  • the magnetic sensor 1 according to the first embodiment of the present invention includes a circuit board 100 and two first magnetic members 40 provided above the circuit board 100.
  • two first conductor portions 60 are provided on the circuit board 100.
  • the insulating layer 30 covering the magnetic layer 10 is provided on the surface layer of the circuit board 100, and the two first conductor portions 60 are located on the insulating layer 30.
  • Circuit board 100 includes a semiconductor substrate 110.
  • the first conductor portion 60 is provided with a through hole 60 h penetrating in the Z-axis direction which is a direction orthogonal to the insulating layer 30.
  • the through hole 60 h is provided at the center of the first conductor portion 60 as viewed in the Z-axis direction which is a direction orthogonal to the insulating layer 30.
  • the through holes 60h are provided in a circular shape. That is, the first conductor portion 60 has an annular shape.
  • the two first magnetic members 40 are located on the two first conductors 60 in a one-to-one correspondence.
  • the first magnetic member 40 covers the corresponding first conductor portion 60 as viewed in the Z-axis direction which is a direction orthogonal to the insulating layer 30.
  • the first magnetic member 40 is located along the through hole 60 h as viewed in the direction orthogonal to the insulating layer 30. That is, the first magnetic member 40 is provided with the through hole 40 h penetrating in the direction orthogonal to the insulating layer 30.
  • the through hole 40 h is provided at the center of the first magnetic member 40 when viewed in the direction orthogonal to the insulating layer 30. When viewed in the direction orthogonal to the insulating layer 30, the through holes 40h are provided in a circular shape.
  • the first magnetic member 40 has a cylindrical shape.
  • the thickness in the Z-axis direction of the first conductor portion 60 is preferably 2.0 ⁇ m or less.
  • the function of the first magnetic member 40 described later as a magnetic shield can be secured.
  • patterning using a resist can be used as a method of forming the first conductor portion 60.
  • the first conductor portion 60 includes gold (Au) located on the insulating layer 30 and located on the layer containing titanium (Ti) and the layer containing titanium (Ti) It is composed of layers.
  • the layer containing titanium (Ti) is an adhesive layer.
  • a layer containing gold (Au) functions as an electrode reaction layer, that is, a seed layer.
  • the configuration of the first conductor portion 60 is not limited to the above, and iron (Fe), molybdenum (Mo), tantalum (Ta), platinum (Pt) and copper (Cu), which are materials functioning as a seed layer for plating. And a layer comprising at least one of Moreover, when the 1st magnetic body member 40 is formed by methods other than plating, such as vapor deposition, you may be comprised with the other conductor containing at least one of a metal and resin.
  • the four magnetic resistances electrically connected to each other by wires to form a Wheatstone bridge type bridge circuit on the circuit board 100 of the magnetic sensor 1 according to the first embodiment of the present invention.
  • An element is provided.
  • the four magnetoresistance elements consist of two sets of first magnetoresistance elements and second magnetoresistance elements.
  • the magnetic sensor 1 includes a first magnetoresistance element 120a and a second magnetoresistance element 130a, and a first magnetoresistance element 120b and a second magnetoresistance element 130b.
  • the first magnetoresistance element 120a and the second magnetoresistance element 130a constitute one set.
  • the first magnetoresistance element 120 b and the second magnetoresistance element 130 b constitute one set.
  • the magnetic sensor 1 includes the two sets of the first and second magnetoresistance elements, but the invention is not limited thereto, and at least one set of the first and second magnetoresistance elements. It is sufficient if the element is included.
  • the circuit board 100 is configured with a half bridge circuit.
  • Each of the first magnetoresistive elements 120a and 120b and the second magnetoresistive elements 130a and 130b is an AMR (Anisotropic Magneto Resistance) element. Note that each of the first magnetoresistance elements 120a and 120b and the second magnetoresistance elements 130a and 130b is replaced with an AMR element, and a GMR (Giant Magneto Resistance) element, a TMR (Tunnel Magneto Resistance) element, a BMR (Ballistic Magneto Resistance) Or a magnetoresistive element such as a CMR (Colossal Magneto Resistance) element.
  • AMR Analog Magnetotropic Magneto Resistance
  • the first magnetoresistance element 120 a is a so-called magnetosensitive resistance whose electric resistance value changes when an external magnetic field is applied. That is, the first magnetoresistance element 120a functions as a magnetosensitive element, and the second magnetoresistance element 130a does not function as a magnetosensitive element.
  • the rate of change in resistance of the second magnetoresistance element 130a to the external magnetic field is preferably lower than the rate of change in resistance of the first magnetic resistance element 120a to the external magnetic field.
  • the magnetic field in the Z-axis direction (vertical magnetic field) and the magnetic field in the X-axis and Y-axis directions (horizontal It is a so-called fixed resistance that hardly detects the magnetic field.
  • the first magnetoresistance element 120 b is a so-called magnetosensitive resistance whose electric resistance value changes when an external magnetic field is applied. That is, the first magnetoresistance element 120b functions as a magnetosensitive element, and the second magnetoresistance element 130b does not function as a magnetosensitive element.
  • the rate of change in resistance of the second magnetoresistance element 130b to the external magnetic field is preferably lower than the rate of change in resistance of the first magnetic resistance element 120b to the external magnetic field.
  • the first magnetoresistive elements 120 a and 120 b and the second magnetoresistive elements 130 a and 130 b are electrically connected to each other by a wiring provided on the semiconductor substrate 110. Specifically, the first magnetoresistive element 120 a and the second magnetoresistive element 130 a are connected in series by the wire 146. The first magnetoresistance element 120 b and the second magnetoresistance element 130 b are connected in series by the wiring 150.
  • a middle point 140 On the semiconductor substrate 110 of the circuit board 100, a middle point 140, a middle point 141, a power supply terminal (Vcc) 142, a ground terminal (Gnd) 143 and an output terminal (Out) 144 are further provided.
  • Vcc power supply terminal
  • Gnd ground terminal
  • Out output terminal
  • Each of the first magnetoresistance element 120 a and the second magnetoresistance element 130 b is connected to the middle point 140. Specifically, the first magnetoresistive element 120 a and the midpoint 140 are connected by the wire 145, and the second magnetoresistive element 130 b and the midpoint 140 are connected by the wire 152.
  • Each of the first magnetoresistance element 120 b and the second magnetoresistance element 130 a is connected to the middle point 141. Specifically, the first magnetoresistive element 120 b and the midpoint 141 are connected by the wire 149, and the second magnetoresistive element 130 a and the midpoint 141 are connected by the wire 148.
  • the wiring 146 is connected to a power supply terminal (Vcc) 142 to which current is input.
  • the wiring 150 is connected to the ground terminal (Gnd) 143.
  • the magnetic sensor 1 further includes a differential amplifier 160, a temperature compensation circuit 161, a latch and switch circuit 162, and a complementary metal oxide semiconductor (CMOS) driver 163.
  • CMOS complementary metal oxide semiconductor
  • the differential amplifier 160 has an input end connected to each of the midpoints 140 and 141 and an output end connected to the temperature compensation circuit 161. Also, the differential amplifier 160 is connected to each of the power supply terminal (Vcc) 142 and the ground terminal (Gnd) 143.
  • the output terminal of the temperature compensation circuit 161 is connected to the latch and switch circuit 162. Also, the temperature compensation circuit 161 is connected to each of the power supply terminal (Vcc) 142 and the ground terminal (Gnd) 143.
  • An output end of the latch and switch circuit 162 is connected to the CMOS driver 163.
  • the latch and switch circuit 162 is connected to each of the power supply terminal (Vcc) 142 and the ground terminal (Gnd) 143.
  • the output terminal of the CMOS driver 163 is connected to the output terminal (Out) 144.
  • the CMOS driver 163 is connected to each of the power supply terminal (Vcc) 142 and the ground terminal (Gnd) 143.
  • the magnetic sensor 1 By having the above-described circuit configuration, the magnetic sensor 1 generates a potential difference depending on the strength of the external magnetic field between the midpoint 140 and the midpoint 141. When this potential difference exceeds a preset detection level, a signal is output from the output terminal (Out) 144.
  • FIG. 6 is a cross-sectional view showing the laminated structure of the connection portion between the magnetoresistive element and the wiring on the circuit board of the magnetic sensor according to Embodiment 1 of the present invention. In FIG. 6, only the connection between the region R functioning as a magnetoresistive element and the region L functioning as a wire is shown.
  • each of the first magnetoresistance elements 120a and 120b and the second magnetoresistance elements 130a and 130b is a semiconductor made of Si or the like on the surface of which a SiO 2 layer or a Si 3 N 4 layer is provided. It is provided on the substrate 110.
  • the magnetic material layer 10 formed of an alloy containing Ni and Fe provided on the semiconductor substrate 110 is patterned by ion milling. It is formed by being done. The thickness of the magnetic layer 10 is, for example, 0.04 ⁇ m.
  • the wirings 145, 146, 148, 149, 150, and 152 are formed by patterning the conductive layer 20 provided on the semiconductor substrate 110 and made of Au or Al by wet etching.
  • the conductive layer 20 is located immediately above the magnetic layer 10 in the region L functioning as a wire, and is not provided in the region R functioning as a magnetoresistive element. Therefore, as shown in FIG. 6, the end of the conductive layer 20 is located immediately above the magnetic layer 10 in the connection portion between the region R functioning as a magnetoresistive element and the region L functioning as a wire. .
  • Each of middle point 140, middle point 141, power supply terminal (Vcc) 142, ground terminal (Gnd) 143 and output terminal (Out) 144 is formed of conductive layer 20 located directly above semiconductor substrate 110. That is, each of middle point 140, middle point 141, power supply terminal (Vcc) 142, ground terminal (Gnd) 143 and output terminal (Out) 144 is a pad provided on semiconductor substrate 110.
  • a Ti layer not shown is provided immediately above the conductive layer 20.
  • An insulating layer 30 made of SiO 2 or the like is provided to cover the magnetic layer 10 and the conductive layer 20. That is, the insulating layer 30 covers the first magnetoresistive elements 120a and 120b and the second magnetoresistive elements 130a and 130b.
  • FIG. 7 is a plan view showing a pattern of the first magnetoresistive element of the magnetic sensor according to Embodiment 1 of the present invention.
  • the first magneto resistive element 120a, the pattern 120 and 120b when viewed from a direction perpendicular to the insulating layer 30, the diameter of the virtual circle C 1 along the circumference of the virtual circle C 1 It includes four first unit patterns arranged in a direction and connected to each other.
  • the direction orthogonal to the insulating layer 30 is the Z-axis direction, which is parallel to the direction orthogonal to the top surface of the semiconductor substrate 110.
  • Each of the four first unit pattern is located along a virtual C-shaped C 11 a portion where the wiring 146,148,150,152 are located at the circumference of the virtual circle C 1 is opened.
  • Each of the four first unit pattern is a C-shaped pattern 121 disposed concentrically so as to be arranged in a radial direction of the virtual circle C 1 along a virtual C-shaped C 11.
  • C-shaped pattern 121 are connected to each other alternately from the center of the virtual circle C 1 and the one end and the other end in order.
  • the C-shaped patterns 121 whose one ends are connected to each other are connected to each other by a semi-circular pattern 122.
  • the C-shaped patterns 121 whose other ends are connected to each other are connected to each other by a semi-circular pattern 123.
  • the pattern 120 of the first magnetoresistance elements 120a and 120b includes two semicircular arc patterns 122 and one semicircular arc pattern 123. Thus, four C-shaped patterns 121 are connected in series.
  • the semi-arc shaped patterns 122 and 123 do not include linear extending portions, and are formed only of curved portions.
  • An end portion of the C-shaped pattern located on the outermost side from the center of the virtual circle C 1 among the four C-shaped patterns 121, the end portion not connected to the semi-circular pattern 122 is a wiring made of the conductive layer 20 It is connected to 145 or the wiring 149.
  • the electric resistance value of the first magnetoresistance elements 120 a and 120 b can be adjusted by changing the formation position of the conductive layer 20 which is the connection position with the end of the C-shaped pattern 121.
  • the conductive layer 20 is extended to the region R functioning as a magnetoresistive element.
  • the electric resistance value of each of the first magnetoresistance elements 120a and 120b can be reduced by enlarging the region L functioning as the wiring.
  • the conductive layer 20 is shortened to the region L functioning as a wire, thereby reducing the region L functioning as a wire.
  • the electric resistance value of each of the first magnetoresistance elements 120a and 120b can be increased.
  • the adjustment of the electric resistance value of the first magnetoresistance elements 120a and 120b is performed by removing or additionally forming a part of the conductive layer 20. Therefore, the adjustment is preferably performed before the insulating layer 30 is provided.
  • the inner peripheral edge of the C-shaped pattern 121 located at the innermost side from the center of the virtual circle C 1 among the four C-shaped patterns 121 is the inner peripheral edge of the first magnetoresistance elements 120 a and 120 b.
  • the first magnetoresistance element 120 a and the first magnetoresistance element 120 b have different circumferential directions such that the virtual C-shape C 11 has a different orientation. That is, the first magnetoresistance element 120 a and the first magnetoresistance element 120 b have different circumferential directions of the pattern 120 such that the C-shaped patterns 121 have different directions.
  • the first magnetoresistive element 120 a and the first magnetoresistive element 120 b have the circumferential direction of the pattern 120 different by 90 ° such that the C-shaped patterns 121 are different from each other by 90 °. .
  • FIG. 8 is a plan view showing a pattern of a second magnetoresistive element of the magnetic sensor according to Embodiment 1 of the present invention.
  • the second magnetoresistance element 130a is seen from a direction perpendicular to the insulating layer 30, situated in the center of the virtual circle C 1, it is surrounded by a first magnetoresistive element 120a
  • the second magnetoresistive element 130 b is located on the center side of the imaginary circle C 1 when viewed in the direction orthogonal to the insulating layer 30 and is surrounded by the first magnetoresistive element 120 b.
  • the second magnetoresistive element 130 a is located inside the inner peripheral edge of the first magnetoresistive element 120 a when viewed in the direction orthogonal to the insulating layer 30, and the second magnetoresistive element 130 b is located on the insulating layer 30. It is located inside the inner peripheral edge of the 1st magnetoresistive element 120b seeing from the orthogonal direction.
  • Second magnetoresistance element 130a is connected to the wiring 146, 148 made of a conductive layer 20 provided from the central side of the imaginary circle C 1 to the outside of the virtual circle C 1.
  • Second magnetoresistance element 130b is connected to the wiring 150, 152 made of a conductive layer 20 provided from the central side of the imaginary circle C 1 to the outside of the virtual circle C 1.
  • the second magnetoresistance elements 130 a and 130 b have a double spiral pattern 130 when viewed in the direction orthogonal to the insulating layer 30.
  • the double spiral pattern 130 has one spiral pattern 131 which is one of two second unit patterns, the other spiral pattern 132 which is the other one of two second unit patterns, And an inverted S-shaped pattern 133 connecting one spiral pattern 131 and the other spiral pattern 132 at the center of the double spiral pattern 130.
  • the reverse S-shaped pattern 133 does not include a linear extending portion, and is formed only of a curved portion.
  • the double spiral pattern 130 is formed to have the same thickness as the pattern 120. Therefore, each of the one spiral pattern 131 and the other spiral pattern 132 has the same thickness as each of the four C-shaped patterns 121.
  • a double spiral pattern 130 has a shape substantially point-symmetrical with respect to the center of the virtual circle C 1. That is, the double spiral pattern 130 has a substantially 180 ° rotationally symmetrical shape with respect to the center of the virtual circle C 1.
  • the second magnetoresistive element 130 a and the second magnetoresistive element 130 b have different circumferential directions of the double spiral pattern 130 such that the directions of the inverted S-shaped patterns 133 are different from each other. ing.
  • the second magnetoresistive element 130 a and the second magnetoresistive element 130 b have a circumferential direction of the double spiral pattern 130 such that the directions of the inverted S-shaped patterns 133 are different from each other by 90 °. 90 ° different.
  • the first magnetoresistance elements 120 a and 120 b have a C-shaped pattern 121.
  • the C-shaped pattern 121 is configured by an arc.
  • the C-shaped patterns 121 adjacent to each other are connected to each other by a semi-circular pattern 122 or a semi-circular pattern 123.
  • the anisotropy of the magnetic field detection is reduced.
  • the direction of the C-shaped pattern 121 of the first magnetoresistive element 120 a and the direction of the C-shaped pattern 121 of the first magnetoresistive element 120 b are different from each other.
  • the different orientations of the circumferential direction 120 increase the isotropy of magnetic field detection.
  • the second magnetoresistance elements 130 a and 130 b have a double spiral pattern 130.
  • the double spiral pattern 130 is mainly configured by winding a substantially arc-shaped curved portion. Since the arc is an approximation when the number of polygon corners increases to infinity, the direction of the current flowing through the double spiral pattern 130 extends in substantially all directions (360 °) in the horizontal direction. There is.
  • the horizontal direction is a direction parallel to the top surface of the semiconductor substrate 110.
  • the double spiral pattern 130 is configured by an inverted S-shaped pattern 133 in which the central portion is formed of only a curved portion.
  • the second magnetoresistance elements 130a and 130b do not include the linearly extending portions, the anisotropy of the magnetoresistance effect is reduced.
  • the circumferential direction of the double spiral pattern 130 is such that the directions of the reverse S-shaped patterns 133 of the second magnetoresistance element 130a and the second magnetoresistance element 130b are different from each other. Due to the different orientations, the isotropy of the magnetoresistance effect is enhanced.
  • the double spiral pattern 130 has a substantially 180 ° rotationally symmetrical shape with respect to the center of the virtual circle C 1. Therefore, each of the second magnetoresistance element 130a and the second magnetoresistance element 130b has a slight anisotropy of magnetoresistance effect.
  • the magnetic direction of the double spiral pattern 130 of the second magnetoresistance element 130a is different from the direction of the circumferential direction of the double spiral pattern 130 of the second magnetoresistance element 130b.
  • the anisotropy of the resistance effect can be reduced to one another.
  • the direction in which the second magnetoresistance element 130a is the highest sensitivity matches the direction in which the second magnetoresistance element 130b is the lowest sensitivity, and the direction in which the second magnetoresistance element 130a is the lowest sensitivity. And the direction in which the second magnetoresistance element 130 b has the highest sensitivity coincide with each other. Therefore, the potential difference generated between the midpoint 140 and the midpoint 141 when the external magnetic field is applied to the magnetic sensor 1 can be suppressed from fluctuating depending on the direction in which the external magnetic field is applied to the magnetic sensor 1.
  • the double spiral pattern 130 has a high density per unit area.
  • the second magnetoresistance elements 130a and 130b having the double spiral pattern 130 make the pattern disposed in the imaginary circle C 1 longer to make the second magnetoresistance elements 130a and 130b have high resistance. it can.
  • the current consumption of the magnetic sensor 1 can be reduced as the electric resistance value of the second magnetoresistance elements 130a and 130b is higher.
  • the direction of the current flowing through the double spiral pattern 130 is dispersed in the horizontal direction to reduce the anisotropy of the magnetoresistance effect of each of the second magnetoresistance element 130a and the second magnetoresistance element 130b.
  • the output of the magnetic sensor 1 when the external magnetic field is zero can be suppressed from being dispersed due to the influence of the residual magnetization.
  • the double spiral pattern 130 may be wound in the opposite direction, and in this case, the central portion of the double spiral pattern 130 is an S-shaped pattern formed of only a curved portion. That is, one spiral pattern and the other spiral pattern are connected by the S-shaped pattern.
  • the magnetic sensor 1 since the second magnetoresistance elements 130a and 130b are disposed inside the first magnetoresistance elements 120a and 120b, the magnetic sensor 1 can be miniaturized. Further, in the magnetic sensor 1, the circuit board 100 is manufactured by a simple manufacturing process because it is not necessary to three-dimensionally draw the wiring connecting the first magnetoresistance elements 120a and 120b and the second magnetoresistance elements 130a and 130b. It is possible.
  • first magnetic members 40 are provided above the insulating layer 30, and the two first magnetic members 40 are arranged side by side in the Y-axis direction.
  • the thickness x of the first magnetic member 40 is, for example, 10 ⁇ m or more, preferably 20 ⁇ m or more and 150 ⁇ m or less.
  • the first magnetic resistance elements 120 a and 120 b detect a perpendicular magnetic field deflected in a substantially horizontal direction by the first magnetic member 40 as described later. it can.
  • the perpendicular magnetic field can be effectively deflected by the first magnetic member 40 in the substantially horizontal direction, so that the first magnetoresistive elements 120a and 120b are weaker Vertical magnetic field can be detected.
  • the thickness x of the first magnetic member 40 is 150 ⁇ m or less, it is possible to maintain the mass productivity of the magnetic sensor 1 by suppressing an increase in the formation time of the first magnetic member 40.
  • the first magnetic member 40 has a circular outer shape when viewed in the direction orthogonal to the insulating layer 30 and is a region inside the outer peripheral edge of the first magnetoresistance elements 120 a and 120 b. It is located in Note that, with respect to the region inside the outer peripheral edge of the first magnetoresistance elements 120a and 120b, both ends of the outer peripheral edge of the first magnetoresistance elements 120a and 120b are connected by imaginary straight lines when viewed from the direction orthogonal to the insulating layer 30.
  • first magnetic member 40 It is an area surrounded by It is preferable that a region inside the outer peripheral edge of the first magnetoresistance elements 120a and 120b and a half or more of the first magnetic member 40 overlap with each other when viewed from the direction orthogonal to the insulating layer 30, and the first magnetic member More preferably, 2/3 or more of 40 overlap.
  • the first magnetic member 40 is located in a region inside the inner peripheral edge of the first magnetoresistive elements 120 a and 120 b when viewed from the direction orthogonal to the insulating layer 30. Note that with the region inside the inner peripheral edge of the first magnetoresistance elements 120a and 120b, both ends of the inner peripheral edge of the first magnetoresistance elements 120a and 120b are connected by imaginary straight lines when viewed from the direction orthogonal to the insulating layer 30. It is an area surrounded by The first magnetic member 40 may be located in a region including the region on the inner peripheral edge of the first magnetoresistance elements 120 a and 120 b and the region inside the inner peripheral edge as viewed from the direction orthogonal to the insulating layer 30.
  • a region inside the inner peripheral edge of the first magnetoresistance elements 120a and 120b and a half or more of the first magnetic member 40 overlap with each other when viewed from the direction orthogonal to the insulating layer 30, and the first magnetic member More preferably, 2/3 or more of 40 overlap.
  • the first magnetic member 40 is concentric with the outer peripheral edge of the first magnetoresistance elements 120 a and 120 b when viewed from the direction orthogonal to the insulating layer 30.
  • the first magnetic member 40 is a second magnetoresistive element of the first magnetoresistive elements 120 a and 120 b and the second magnetoresistive elements 130 a and 130 b when viewed from the direction orthogonal to the insulating layer 30. It covers only 130a and 130b. Therefore, when viewed from the direction orthogonal to the insulating layer 30, the first magnetic member 40 is surrounded by the first magnetoresistive elements 120a and 120b.
  • the first magnetic member 40 is made of a magnetic material having high magnetic permeability and high saturation magnetic flux density, such as electromagnetic steel, mild steel, silicon steel, permalloy, supermalloy, nickel alloy, iron alloy or ferrite. In addition, these magnetic materials preferably have low coercivity.
  • the magnetic permeability increases at high temperatures and decreases at low temperatures.
  • the resistance of the first magnetoresistance elements 120a and 120b The temperature dependency of the rate of change can be reduced.
  • the first magnetic member 40 is formed, for example, by plating. Another thin layer may be provided between the insulating layer 30 and the first magnetic member 40.
  • the outer shape of the first magnetic member 40 was a cylindrical shape having a diameter of 140 ⁇ m and a thickness x of 100 ⁇ m.
  • the first magnetic member 40 was made of permalloy.
  • the second magnetoresistance elements 130a and 130b above the second magnetoresistance elements 130a and 130b, only the second magnetoresistance elements 130a and 130b of the first magnetoresistance elements 120a and 120b and the second magnetoresistance elements 130a and 130b.
  • the first magnetic member 40 is disposed such that the inner peripheral edge of the first magnetoresistance elements 120 a and 120 b is adjacent to the outer peripheral edge of the first magnetic member 40 when viewed in the direction orthogonal to the insulating layer 30. .
  • the strength of the applied vertical magnetic field or horizontal magnetic field was 30 mT.
  • FIG. 9 is a flux diagram showing a magnetic flux density distribution when a perpendicular magnetic field is applied to the magnetic sensor according to Experimental Example 1.
  • FIG. 10 is a magnetic flux diagram showing a magnetic flux density distribution when a horizontal magnetic field is applied to the magnetic sensor according to Experimental Example 1.
  • FIG. 11 shows the relationship between the distance in the horizontal direction from the outer peripheral edge of the first magnetic member and the magnetic field strength in the horizontal direction when a vertical magnetic field or a horizontal magnetic field is applied to the magnetic sensor according to Experimental Example 1. It is a graph. 9 and 10, only the first magnetic member 40, the first magnetoresistive elements 120a and 120b, and the second magnetoresistive elements 130a and 130b are illustrated when the magnetic sensor 1 is viewed from the horizontal direction.
  • the vertical axis indicates the magnetic field strength (mT) in the horizontal direction
  • the horizontal axis indicates the horizontal distance ( ⁇ m) from the outer peripheral edge of the first magnetic member.
  • the distance in the horizontal direction from the outer peripheral edge of the first magnetic member is a positive distance from the outer peripheral edge of the first magnetic member 40, and the distance from the outer peripheral edge of the first magnetic member 40 to the inner side The distance is indicated by a negative value.
  • the distribution of the magnetic field intensity in the horizontal direction when the perpendicular magnetic field is applied is indicated by a solid line V
  • the distribution of the magnetic field intensity in the horizontal direction when a horizontal magnetic field is applied is indicated by a solid line H.
  • the magnetic flux is applied to the first magnetic member 40 having high permeability on the upper surface side of the first magnetic member 40. Were attracted and collected. The magnetic flux that has entered the first magnetic member 40 passes through the first magnetic member 40 in the vertical direction, and then is diffused and emitted from the lower surface side of the first magnetic member 40.
  • a magnetic field was applied to the second magnetoresistance elements 130 a and 130 b positioned directly below the first magnetic member 40 in a substantially perpendicular direction. Therefore, the second magnetoresistance elements 130a and 130b hardly detect the perpendicular magnetic field.
  • the first magnetoresistance elements 120a and 120b located below the outer peripheral edge of the first magnetic member 40 a magnetic field deflected in a substantially horizontal direction was applied as shown by the arrows in FIG. Therefore, the first magnetoresistance elements 120a and 120b could detect the vertical magnetic field as a magnetic field deflected in the substantially horizontal direction.
  • the magnetic field in the horizontal direction was hardly applied to the second magnetoresistance elements 130a and 130b located immediately below the first magnetic member 40. Therefore, the second magnetoresistance elements 130a and 130b hardly detect the horizontal magnetic field.
  • a magnetic field in the horizontal direction was applied to the first magnetoresistance elements 120 a and 120 b located below the outer peripheral edge of the first magnetic member 40. Therefore, the first magnetoresistance elements 120a and 120b could detect the horizontal magnetic field.
  • a perpendicular magnetic field a position about 10 ⁇ m away from the outer peripheral edge of the first magnetic member 40 from a position about 2 ⁇ m away inwardly from the outer periphery of the first magnetic member 40 Up to the horizontal magnetic field strength was higher than 30 mT, which is the strength of the applied vertical magnetic field.
  • the magnetic field strength in the horizontal direction is higher than 30 mT which is the strength of the applied horizontal magnetic field at the position outside the outer peripheral edge of the first magnetic member 40.
  • the magnetic field strength in the horizontal direction is 1/3 of 30 mT, which is the strength of the applied vertical magnetic field or horizontal magnetic field, at a position spaced about 7 ⁇ m or more inward from the outer peripheral edge of the first magnetic member 40. It was below. Therefore, it is preferable that the second magnetoresistance elements 130a and 130b be provided at a position spaced apart by about 7 ⁇ m or more from the outer peripheral edge of the first magnetic member 40.
  • the horizontal direction The magnetic field strength of the magnetic field is higher than 30 mT, which is the strength of the applied vertical magnetic field or horizontal magnetic field. Therefore, it is preferable that at least a part of the first magnetoresistance elements 120a and 120b be provided in at least a part of this region. More than half of the entire outer circumference of the first magnetic member 40 is surrounded by the first magnetoresistance elements 120a and 120b provided in the above region, as viewed in the direction orthogonal to the insulating layer 30. More preferably, 2/3 or more of the entire outer circumference of the first magnetic member 40 is surrounded.
  • the first magnetic member 40 is positioned concentrically with the outer peripheral edge of the first magnetoresistive elements 120a and 120b when viewed from the direction orthogonal to the insulating layer 30, and the first magnetoresistive elements 120a and 120b.
  • the magnetic field in the horizontal direction emitted outward from the outer peripheral edge of the first magnetic member 40 can be applied approximately equally in the circumferential direction to the first magnetoresistance elements 120a and 120b.
  • the perpendicular magnetic field of the first magnetoresistance elements 120a and 120b is suppressed while suppressing the resistance change of the second magnetoresistance elements 130a and 130b due to the perpendicular magnetic field. It has been confirmed that the detection sensitivity of can be enhanced. That is, the first magnetoresistance elements 120a and 120b can detect a weak vertical magnetic field. Further, the magnetic sensor 1 according to the first embodiment of the present invention improves the detection sensitivity of the horizontal magnetic field of the first magnetic resistance elements 120a and 120b while suppressing the resistance change of the second magnetic resistance elements 130a and 130b due to the horizontal magnetic field. I was able to confirm that I could do it. That is, the first magnetoresistance elements 120a and 120b can detect a weak horizontal magnetic field.
  • FIG. 12 shows the relationship between the distance in the horizontal direction from the outer peripheral edge of the first magnetic member and the magnetic field strength in the horizontal direction when a vertical magnetic field is applied to the magnetic sensor according to Experimental Example 2 It is a graph which shows the influence of the thickness of a body member.
  • the vertical axis indicates the magnetic field strength (mT) in the horizontal direction
  • the horizontal axis indicates the horizontal distance ( ⁇ m) from the outer peripheral edge of the first magnetic member.
  • FIG. 13 is a graph showing the relationship between the thickness of the first magnetic member and the horizontal distance from the outer peripheral edge of the first magnetic member to the outside at which the magnetic field strength in the horizontal direction is 1/3 of the peak value. is there. 12 and 13, the horizontal distance from the outer peripheral edge of the first magnetic member is a positive distance from the outer peripheral edge of the first magnetic member 40 to the first magnetic member 40. The distance away from the outer edge of the inward is indicated by a negative value.
  • the outer shape of the first magnetic member 40 was a cylindrical shape having a diameter of 140 ⁇ m.
  • the thickness x of the first magnetic member 40 was five types of 10 ⁇ m, 20 ⁇ m, 50 ⁇ m, 100 ⁇ m and 150 ⁇ m.
  • the first magnetic member 40 was made of permalloy.
  • the arrangement of the first magnetic member 40 was the same as that of Example 1.
  • the strength of the applied perpendicular magnetic field was 30 mT.
  • the peak value of the magnetic field strength in the horizontal direction increases.
  • the dependency on the permeability of the first magnetic member 40 is small, and the permeability of the first magnetic member 40 is There is almost no change when
  • a horizontal magnetic field of 1/3 or more of the peak value of the magnetic field strength in the horizontal direction is applied to the first magnetoresistance elements 120a and 120b, And it is preferable that the intensity of the magnetic field in the horizontal direction applied to the second magnetoresistance elements 130a and 130b is 1/10 or less of the peak value of the magnetic field intensity in the horizontal direction.
  • the magnetic field strength in the horizontal direction is 1/1 of the peak value. It was 3 or more.
  • the horizontal distance y from the outer peripheral edge of the first magnetic member 40 to the outer side where the magnetic field strength in the horizontal direction is 1/3 of the peak value is the thickness of the first magnetic member 40. It became long as x became thick.
  • the magnetic field strength in the horizontal direction becomes 1/3 or more of the peak value. Therefore, when viewed from the direction orthogonal to the insulating layer 30, the above-mentioned formula (I) is shown outside from the outer peripheral edge of the first magnetic member 40 from a position spaced 2 ⁇ m inward from the outer peripheral edge of the first magnetic member 40 In the region up to a position separated by y ⁇ m, the magnetic field strength in the horizontal direction becomes 1/3 or more of the peak value.
  • the magnetic field strength in the horizontal direction is 1/1 of the peak value. It was less than ten. That is, in the region from the center of the first magnetic member 40 to the position 7 ⁇ m away from the outer peripheral edge of the first magnetic member 40 in the direction perpendicular to the insulating layer 30, the magnetic field strength in the horizontal direction was less than 1/10 of the peak value.
  • the first magnetic member It is preferable to be located in at least one part of an area
  • the center of the first magnetic member 40 to a position 7 ⁇ m away from the outer peripheral edge of the first magnetic member 40 when the second magnetoresistive elements 130 a and 130 b are viewed in the direction orthogonal to the insulating layer 30.
  • it is located in the area of
  • the magnetic sensor 1 according to Embodiment 1 of the present invention can detect the vertical magnetic field and the horizontal magnetic field with high sensitivity. Further, the magnetic sensor 1 according to the first embodiment of the present invention includes a plurality of first unit patterns in which the first magnetoresistance elements 120a and 120b are arranged concentrically, so that the isotropy of detection of the horizontal magnetic field is obtained. high.
  • the double spiral pattern 130 of the second magnetoresistance elements 130a and 130b is formed to have the same thickness as the pattern 120 of the first magnetoresistance elements 120a and 120b.
  • the double spiral pattern 130 may be formed in a pattern thinner than the pattern 120.
  • the magnetoresistance effect of the second magnetoresistance elements 130a and 130b is smaller than that of the first magnetoresistance elements 120a and 120b.
  • the magnetoresistance effect of the second magnetoresistance elements 130a and 130b is suppressed, and the rate of change in resistance of the second magnetoresistance elements 130a and 130b is significantly reduced.
  • the detection sensitivity of the magnetic sensor 1 can be increased by increasing the potential difference generated between the midpoint 140 and the midpoint 141 when the external magnetic field is applied to the magnetic sensor 1. Further, since the electric resistance value of the second magnetoresistance elements 130a and 130b is high, a reduction in the potential difference generated between the middle point 140 and the middle point 141 when an external magnetic field of high magnetic field strength is applied to the magnetic sensor 1 Is relatively small, and the output characteristics of the magnetic sensor 1 can be stabilized.
  • the second magnetoresistive elements 130a and 130b are magnetically shielded by the first magnetic member 40 and hardly detect the vertical magnetic field and the horizontal magnetic field, the second magnetoresistive elements 130a and 130b are not necessarily detected.
  • the rate of change in resistance does not have to be smaller than the rate of change in resistance of the first magnetoresistance elements 120a and 120b.
  • the first conductor portion 60 is provided between the first magnetic member 40 and the circuit board 100, and the first conductor portion 60 includes As viewed in the Z-axis direction which is a direction orthogonal to the insulating layer 30, the through holes 60h are provided.
  • the contact area between the first conductor portion 60 and the circuit board 100 can be reduced, and the stress acting on the contact interface between the first conductor portion 60 and the insulating layer 30 can be dispersed.
  • the stress acting on the first magnetoresistance elements 120a and 120b and the second magnetoresistance elements 130a and 130b from the first magnetic member 40 through the first conductor portion 60 can be reduced, and the output of the magnetic sensor 1 can be reduced. It is possible to suppress the decrease in accuracy.
  • generation of a crack in the insulating layer 30 due to the stress acting on the insulating layer 30 from the first magnetic member 40 through the first conductor portion 60 can be suppressed. Thereby, it can suppress that the reliability of the magnetic sensor 1 falls.
  • the magnetic sensor 1 has high isotropy of detection of the horizontal magnetic field and can detect weak vertical magnetic fields by using the magnetoresistance element, and can also detect magnetic resistance. It is possible to suppress a decrease in output accuracy due to a stress acting on a magnetoresistive element from a structure provided above the element.
  • thickness x of the 1st magnetic material member 40 into the thickness of the part located on the 1st conductor part 60 in the 1st magnetic material member 40, the verification result based on Experimental example 1 and Experimental example 2 It is possible to use
  • Embodiment 2 of the present invention a magnetic sensor according to Embodiment 2 of the present invention will be described with reference to the drawings.
  • the magnetic sensor according to the second embodiment of the present invention is different from the magnetic sensor 1 according to the first embodiment of the present invention mainly in the shapes of the first conductor portion and the first magnetic member, so that the embodiment of the present invention is implemented.
  • the description of the same configuration as that of the magnetic sensor 1 according to the first embodiment will not be repeated.
  • FIG. 14 is a perspective view showing a configuration of a magnetic sensor according to Embodiment 2 of the present invention.
  • FIG. 15 is a cross-sectional view of the magnetic sensor of FIG. 14 as viewed in the arrow direction of XV-XV.
  • FIG. 16 is a plan view of the magnetic sensor of FIG. 14 as viewed in the direction of arrow XVI.
  • the first conductor portion 60 a penetrates in the Z axis direction which is a direction orthogonal to the insulating layer 30.
  • a groove 60am is provided. When viewed in the Z-axis direction which is a direction orthogonal to the insulating layer 30, the through groove 60am extends linearly. The through groove 60am passes through the center of the first conductor portion 60a as viewed in the Z-axis direction which is a direction orthogonal to the insulating layer 30.
  • the first conductor portion 60a when viewed in the Z-axis direction which is a direction orthogonal to the insulating layer 30, the first conductor portion 60a has a substantially circular shape separated into two semicircular shapes.
  • the shape of the first conductor portion 60a is not limited to the above.
  • the through groove 60am is not provided at the center of the first conductor portion 60a but is divided into two, and the first conductor portion 60a is You may be comprised by 1 member.
  • the two first magnetic members 40a are located on the two first conductors 60a in a one-to-one correspondence.
  • the first magnetic member 40 a covers the corresponding first conductor portion 60 a when viewed in the direction orthogonal to the insulating layer 30.
  • the first magnetic member 40 a is located along the through groove 60 am when viewed in the direction orthogonal to the insulating layer 30. That is, in the first magnetic member 40a, a through groove 40am penetrating in the direction orthogonal to the insulating layer 30 is provided.
  • the through groove 40am passes through the center of the first magnetic member 40a as viewed from the direction perpendicular to the insulating layer 30.
  • the first magnetic member 40a has a substantially cylindrical shape divided into two half cylinders.
  • the shape of the first magnetic member 40a is not limited to the above, and for example, the through groove 40am is not provided at the center of the first magnetic member 40a but is divided into two, and the first magnetic member 40a is You may be comprised by 1 member.
  • the first conductor portion 60a has the above shape, whereby the plating solution is formed along the through groove 60am on the outer peripheral side of the first conductor portion 60a. Since it can flow out, it can suppress that a plating solution is confined in the inside of the 1st magnetic member 40a.
  • the first conductor portion 60a is provided between the first magnetic member 40a and the circuit board 100, and the first conductor portion 60a is insulated. As viewed in the Z-axis direction which is a direction orthogonal to the layer 30, the through groove 60am is provided.
  • the contact area between the first conductor portion 60 a and the circuit board 100 can be reduced, and the stress acting on the contact interface between the first conductor portion 60 a and the insulating layer 30 can be dispersed.
  • the stress acting on the first magnetoresistance elements 120a and 120b and the second magnetoresistance elements 130a and 130b from the first magnetic member 40a through the first conductor portion 60a can be reduced, and the output of the magnetic sensor 1a It is possible to suppress the decrease in accuracy.
  • Embodiment 3 a magnetic sensor according to Embodiment 3 of the present invention will be described with reference to the drawings.
  • the magnetic sensor according to the third embodiment of the present invention is different from the magnetic sensor 1a according to the second embodiment of the present invention mainly in that another through groove is further provided in the first conductor portion. Description is not repeated about the same composition as magnetic sensor 1a concerning Embodiment 2 of the present invention.
  • FIG. 17 is a perspective view showing the configuration of a magnetic sensor according to Embodiment 3 of the present invention.
  • FIG. 18 is a cross-sectional view of the magnetic sensor of FIG. 17 as viewed in the direction of arrows XVIII-XVIII.
  • FIG. 19 is a plan view of the magnetic sensor of FIG. 17 as viewed in the direction of arrow XIX.
  • the first conductor portion 60b penetrates in the Z axis direction which is a direction orthogonal to the insulating layer 30.
  • Grooves 60am and other through grooves 60bm are provided.
  • the other through grooves 60bm extend linearly.
  • the other through grooves 60bm pass through the center of the first conductor portion 60b when viewed from the Z-axis direction which is a direction orthogonal to the insulating layer 30.
  • the other through groove 60bm intersects the through groove 60am at the center of the first conductor portion 60b when viewed from the Z-axis direction which is a direction orthogonal to the insulating layer 30. That is, the first conductor portion 60b has a substantially circular shape separated into four quadrants.
  • the shape of the first conductor portion 60b is not limited to the above.
  • each of the through groove 60am and the other through groove 60bm is not provided at the center of the first conductor portion 60b, but is divided into two.
  • the first conductor portion 60b may be constituted by one member.
  • the two first magnetic members 40b are located on the two first conductor parts 60b so as to correspond one to one.
  • the first magnetic member 40 b covers the corresponding first conductor portion 60 b as viewed in the direction orthogonal to the insulating layer 30.
  • the first magnetic member 40b is located along the through groove 60am and the other through groove 60bm when viewed from the direction orthogonal to the insulating layer 30. That is, in the first magnetic member 40b, a through groove 40am and another through groove 40bm which are penetrated in the direction orthogonal to the insulating layer 30 are provided.
  • the other through grooves 40 bm pass through the center of the first magnetic member 40 b when viewed in the direction orthogonal to the insulating layer 30.
  • the other through groove 40bm intersects the through groove 40am at the center of the first magnetic member 40b when viewed in the direction orthogonal to the insulating layer 30.
  • the first magnetic member 40b has a substantially cylindrical shape divided into four quadrants.
  • the shape of the first magnetic member 40b is not limited to the above.
  • each of the through groove 40am and the other through groove 40bm is not provided at the center of the first magnetic member 40b but divided into two.
  • the first magnetic member 40b may be formed of one member.
  • the first conductor portion 60b has the above-described shape, whereby the plating solution is formed along the through groove 60am and the other through groove 60bm. Since it can flow out to the outer peripheral side of the part 60b, it can suppress that a plating solution is confined in the inside of the 1st magnetic material member 40b.
  • the first conductor portion 60b is provided between the first magnetic member 40b and the circuit board 100, and the first conductor portion 60b includes A through groove 60am and another through groove 60bm are provided when viewed from the Z-axis direction which is a direction orthogonal to the insulating layer 30.
  • the contact area between the first conductor portion 60 b and the circuit board 100 can be reduced, and the stress acting on the contact interface between the first conductor portion 60 b and the insulating layer 30 can be dispersed.
  • the stress acting on the first magnetoresistance elements 120a and 120b and the second magnetoresistance elements 130a and 130b from the first magnetic member 40b through the first conductor portion 60b can be reduced, and the output of the magnetic sensor 1b It is possible to suppress the decrease in accuracy.
  • the magnetic sensor according to the fourth embodiment of the present invention differs from the magnetic sensor 1 according to the first embodiment of the present invention mainly in that the magnetic sensor according to the fourth embodiment of the present invention does not include the first conductor portion. The description of the same configuration as that of the magnetic sensor 1 will not be repeated.
  • FIG. 20 is a perspective view showing a configuration of a magnetic sensor according to Embodiment 4 of the present invention.
  • FIG. 21 is a cross-sectional view of the magnetic sensor of FIG. 20 as viewed in the direction of the arrows along line XXI-XXI.
  • FIG. 22 is a plan view of the magnetic sensor of FIG. 20 as viewed in the direction of arrow XXII.
  • the first magnetic member 40 is provided on the circuit board 100.
  • the first magnetic member 40 is provided with a through hole 40 h penetrating in the Z-axis direction which is a direction orthogonal to the insulating layer 30.
  • the first magnetic member 40 has a cylindrical shape.
  • the contact area between the first magnetic member 40 and the circuit board 100 can be reduced, and the stress acting on the contact interface between the first magnetic member 40 and the insulating layer 30 can be dispersed.
  • the generation of a crack in the insulating layer 30 due to the stress acting on the insulating layer 30 from the first magnetic member 40 can be suppressed. Thereby, it can suppress that the reliability of the magnetic sensor 1c falls.
  • the shape of the first magnetic member 40 is not limited to the above, and may be the shape of the first magnetic member 40a according to the second embodiment or the shape of the first magnetic member 40b according to the third embodiment. It is also good.
  • Embodiment 5 a magnetic sensor according to Embodiment 5 of the present invention will be described with reference to the drawings.
  • the magnetic sensor according to the fifth embodiment of the present invention is different from the magnetic sensor 1 according to the first embodiment of the present invention mainly in the pattern of the second magnetoresistive element, so the magnetic sensor according to the first embodiment of the present invention Description will not be repeated for configurations that are similar to 1.
  • FIG. 23 is a plan view of a magnetic sensor according to Embodiment 5 of the present invention.
  • FIG. 24 is a plan view showing a pattern of the second magnetoresistive element of the magnetic sensor according to Embodiment 5 of the present invention.
  • the magnetic sensor 2 according to Embodiment 5 of the present invention includes a circuit board 200 and two first magnetic members 40 provided above the circuit board 200.
  • two first conductor portions are provided on the circuit board 200.
  • the first magnetic member 40 covers the corresponding first conductive portion as viewed in the Z-axis direction which is a direction orthogonal to the insulating layer 30.
  • the first magneto resistive element 120a of the magnetic sensor 2 according to a fifth embodiment of the present invention, 120b of the pattern is viewed from the direction perpendicular to the insulating layer 30, the imaginary circle C 2 including three first unit patterns connected to each other are arranged side by side in the radial direction of the virtual circle C 2 along the circumference.
  • Each of the three first unit pattern is located along a virtual C-shape C 21 a portion where the wiring 146,148,150,152 are located at the circumference of the virtual circle C 2 is opened.
  • Each of the three first unit pattern is a C-shaped pattern which are arranged side by side in the radial direction of the virtual circle C 2 along a virtual C-shape C 21.
  • the first magnetoresistance element 120a and the first magnetoresistance element 120b differ in the circumferential direction of the pattern by 90 ° so that the directions of the C-shaped patterns are different from each other by 90 °.
  • the second magnetoresistance element 230a, 230b when viewed from a direction perpendicular to the insulating layer 30, situated in the center of the imaginary circle C 2, the first magnetoresistive element 120a, 120b It is surrounded by That is, the second magnetoresistance elements 230a and 230b are located inside the inner peripheral edge of the first magnetoresistance elements 120a and 120b when viewed from the direction orthogonal to the insulating layer 30.
  • Second magnetoresistance element 230a, 230b is fourteen semicircular pattern is a second unit pattern arranged symmetrically so as to align in the radial direction of the virtual circle C 2 along the circumference of the virtual circle C 2
  • a pattern 230 including 231 is included.
  • the pattern 230 is formed to have the same thickness as the pattern 120 of the first magnetoresistance elements 120a and 120b. However, the thickness of the pattern 230 may be thinner than the thickness of the pattern 120.
  • the fourteen semi-circular patterns 231 are alternately connected to each other at one end and the other in order from the inside.
  • the semicircular arc-shaped patterns 231 whose ends are connected to each other are connected to each other by a semicircular arc-shaped pattern 232.
  • the semicircular arc patterns 231 whose other ends are connected to each other are connected to each other by a semicircular arc pattern 233.
  • the semicircular arc-shaped patterns 231 located at the innermost and symmetrical with each other are connected to each other at their one ends by the linear extending portions 234.
  • the length of the linear extension 234 is less than 10 ⁇ m.
  • the pattern 230 of the second magnetoresistive elements 230a and 230b includes six semicircular arc patterns 232, six semicircular arc patterns 233, and a linear extension 234. As a result, fourteen semi-circular patterns 231 are connected in series.
  • the semi-arc shaped patterns 232 and 233 do not include linear extending parts, and are formed only of curved parts.
  • the second magnetoresistance elements 230 a and 230 b have a semicircular arc-shaped pattern 231.
  • the semicircular arc-shaped pattern 231 is configured by an arc.
  • Two semi-arc shaped patterns 231 adjacent to each other are connected to each other by semi-arc shaped patterns 232 and 233. Since the second magnetoresistive elements 230a and 230b include only the linear extending portion 234 whose length is shorter than 10 ⁇ m, the anisotropy of the magnetic field detection is reduced.
  • the second magnetoresistance element 230 a and the second magnetoresistance element 230 b are different in the circumferential direction of the pattern 230.
  • the second magnetoresistance element 130a and the second magnetoresistance element 130b differ in the circumferential direction of the pattern 230 by 90 °.
  • the magnetic sensor 2 since the second magnetoresistance elements 230a and 230b are disposed inside the first magnetoresistance elements 120a and 120b, the magnetic sensor 2 can be miniaturized. Further, in the magnetic sensor 2 as well, it is not necessary to three-dimensionally extend the wiring connecting the first magnetoresistance elements 120a and 120b and the second magnetoresistance elements 230a and 230b, so the circuit board 200 is manufactured by a simple manufacturing process. It is possible.
  • the first magnetic member 40 when viewed from the Z-axis direction which is a direction perpendicular to the insulating layer 30, the first magnetic member 40 is one of the first magnetoresistive elements 120a and 120b and the second magnetoresistive elements 230a and 230b. Only the second magnetoresistance elements 230a and 230b.
  • the vertical magnetic field and the horizontal magnetic field can be detected with high sensitivity.
  • the magnetic sensor 2 according to Embodiment 5 of the present invention includes a plurality of first unit patterns in which the first magnetoresistance elements 120a and 120b are arranged concentrically, so that the isotropy of detection of the horizontal magnetic field is obtained. high.
  • the second magnetoresistance elements 230a and 230b are magnetically shielded by the first magnetic member 40 and hardly detect the vertical magnetic field and the horizontal magnetic field, the second magnetoresistance elements 230a and 230b are not necessarily detected.
  • the rate of change in resistance does not have to be smaller than the rate of change in resistance of the first magnetoresistance elements 120a and 120b.
  • the isotropy of detection of the horizontal magnetic field is high, and a weak vertical magnetic field can be detected, and above the magnetoresistive element It is possible to suppress the decrease in output accuracy due to the stress acting on the magnetoresistive element from the provided structure.
  • Embodiment 6 a magnetic sensor according to Embodiment 6 of the present invention will be described with reference to the drawings.
  • the pattern of each of the first and second magnetoresistance elements, the arrangement of the second magnetoresistance element, and the point of including the second conductor portion The configuration is the same as that of the magnetic sensor 1 according to the first embodiment of the present invention, and therefore, the description will not be repeated because it is mainly different from the magnetic sensor 1 according to the first embodiment of the present invention.
  • FIG. 25 is a perspective view showing a configuration of a magnetic sensor according to Embodiment 6 of the present invention.
  • FIG. 26 is a cross-sectional view of the magnetic sensor of FIG. 25 as viewed in the direction of arrows XXVI-XXVI.
  • FIG. 27 is a plan view of the magnetic sensor of FIG. 25 as viewed in the direction of arrow XXVII.
  • the magnetic sensor 3 includes a circuit board 300, and two first magnetic members 40 and two first magnetic members 40 provided above the circuit board 300. And 2 a magnetic member 50.
  • the two first conductor parts 60 and the two second conductor parts 70 are provided on the circuit board 300.
  • the insulating layer 30 is provided on the surface layer of the circuit board 300, and the two first conductor parts 60 and the two second conductor parts 70 are located on the insulating layer 30.
  • the second conductor portion 70 is provided with a through hole 70 h penetrating in the Z-axis direction which is a direction orthogonal to the insulating layer 30.
  • the through hole 70 h is provided at the center of the second conductor portion 70 as viewed in the Z-axis direction which is a direction orthogonal to the insulating layer 30.
  • the through holes 70h are provided in a bent rectangular shape. That is, the second conductor portion 70 has an annular shape while having a bent rectangular outer shape when viewed from the Z-axis direction which is a direction orthogonal to the insulating layer 30.
  • the two second magnetic members 50 are located on the two second conductor portions 70 in a one-to-one correspondence.
  • the second magnetic member 50 covers the corresponding second conductor portion 70 as viewed in the direction orthogonal to the insulating layer 30.
  • the second magnetic member 50 is located along the through hole 70 h as viewed in the direction orthogonal to the insulating layer 30. That is, the second magnetic member 50 is provided with the through hole 50 h penetrating in the direction orthogonal to the insulating layer 30.
  • the through hole 50 h is provided at the center of the second magnetic member 50 when viewed in the direction orthogonal to the insulating layer 30.
  • the through holes 50h are provided in a bent rectangular shape.
  • the second magnetic member 50 has a tubular shape while having a bent rectangular outer shape when viewed in the direction orthogonal to the insulating layer 30.
  • the thickness in the Z-axis direction of the second conductor portion 70 is preferably 2.0 ⁇ m or less.
  • the function of the second magnetic member 50 as a magnetic shield can be secured.
  • patterning using a resist can be used as a method of forming the second conductor portion 70.
  • the second conductor portion 70 is located on the insulating layer 30 and is a layer containing titanium (Ti) and a layer containing gold (Au) located on the layer containing titanium (Ti) And consists of The layer containing titanium (Ti) is an adhesive layer.
  • a layer containing gold (Au) functions as an electrode reaction layer, that is, a seed layer.
  • the configuration of the second conductor portion 70 is not limited to the above, and iron (Fe), molybdenum (Mo), tantalum (Ta), platinum (Pt) and copper (Cu), which are materials functioning as a seed layer for plating. And a layer comprising at least one of Moreover, when the 2nd magnetic body member 50 is formed by methods other than plating, such as vapor deposition, you may be comprised with the other conductor containing at least one of a metal and resin.
  • FIG. 28 is a plan view of the magnetic sensor of FIG. 25 as viewed in the direction of arrow XXVIII.
  • the circuit board 300 of the magnetic sensor 3 according to the sixth embodiment of the present invention is provided with four magnetoresistive elements electrically connected to each other by wires to form a Wheatstone bridge type bridge circuit. It is done.
  • the four magnetoresistance elements consist of two sets of first magnetoresistance elements and second magnetoresistance elements.
  • the magnetic sensor 3 includes a first magnetoresistive element 320a and a second magnetoresistive element 330a, and a first magnetoresistive element 320b and a second magnetoresistive element 330b.
  • the first magnetoresistance element 320a and the second magnetoresistance element 330a constitute one set.
  • the first magnetoresistance element 320 b and the second magnetoresistance element 330 b constitute one set.
  • FIG. 29 is a plan view showing a pattern of the first magnetoresistive element of the magnetic sensor according to Embodiment 6 of the present invention.
  • the first magnetoresistance elements 320a and 320b have a double spiral pattern 320 when viewed from the direction orthogonal to the insulating layer 30.
  • the two double spiral patterns 320 are concentrically arranged in the radial direction of the imaginary circle along the circumference of the imaginary circle and viewed from the direction orthogonal to the insulating layer 30 and connected to each other. Includes unit patterns.
  • the double spiral pattern 320 includes one spiral pattern 321 which is a first unit pattern, the other spiral pattern 322 which is a first unit pattern, and one spiral pattern 321 and the other spiral pattern 322. Are connected at the central portion of the double spiral pattern 320.
  • the S-shaped pattern 323 does not include a linear extending portion, and is formed only of a curved portion.
  • the double spiral pattern 320 has redundant portions 324 and 325 for adjusting the length of the double spiral pattern 320 at the end of each spiral pattern 321 and the other spiral pattern 322.
  • the length adjustment redundant portions 324 and 325 are configured by bending and folding the end portions of one spiral pattern 321 and the other spiral pattern 322, respectively.
  • the length adjustment redundant portion 324 provided in one spiral pattern 321 and the length adjustment redundant portion 325 provided in the other spiral pattern 322 are mutually different in the radial direction of the double spiral pattern 320. It is located on the opposite side.
  • Each of the length adjustment redundant portions 324 and 325 does not include a linear extending portion, and is configured only by a curved portion.
  • the double spiral pattern 320 is connected to the conductive layer 20 forming the wiring in the length adjustment redundant portions 324 and 325.
  • the electric resistance value of the first magnetoresistance elements 320a and 320b can be adjusted.
  • the conductive layer 20 is extended to the region R functioning as a magnetoresistive element.
  • the electric resistance value of each of the first magnetoresistance elements 320a and 320b can be reduced by enlarging the region L functioning as the wiring.
  • the conductive layer 20 is shortened to the region L functioning as a wire, thereby reducing the region L functioning as a wire.
  • the electric resistance value of each of the first magnetoresistance elements 320a and 320b can be increased.
  • the adjustment of the electric resistance value of the first magnetoresistance elements 320a and 320b is performed by removing or additionally forming a part of the conductive layer 20. Therefore, the adjustment is preferably performed before the insulating layer 30 is provided.
  • the double spiral pattern 320 has a substantially point-symmetrical shape with respect to the central point of the double spiral pattern 320. That is, the double spiral pattern 320 has a shape that is approximately 180 ° rotationally symmetric with respect to the center point of the double spiral pattern 320.
  • the circumferential direction of the double spiral pattern 320 is different so that the directions of the S-shaped patterns 323 are different from each other. There is.
  • the circumferential direction of the double spiral pattern 320 is 90 so that the orientations of the S-shaped patterns 323 are different from each other by 90 °. ° is different.
  • the double spiral pattern 320 may be wound in the reverse direction, and in this case, the central portion of the double spiral pattern 320 is formed of an inverted S-shaped pattern including only a curved portion. That is, one spiral pattern 321 and the other spiral pattern 322 are connected by the reverse S-shaped pattern.
  • FIG. 30 is a plan view showing the pattern of the second magnetoresistance element of the magnetic sensor according to Embodiment 6 of the present invention.
  • FIG. 31 is a plan view showing a second unit pattern included in the pattern of the second magnetoresistance element of the magnetic sensor according to Embodiment 6 of the present invention.
  • FIG. 30 only one of three patterns 330 of the same shape that the second magnetoresistance elements 330a and 330b have is illustrated.
  • the second magnetoresistive elements 330a and 330b are located outside the outer peripheral edge of the first magnetoresistive elements 320a and 320b when viewed from the Z-axis direction which is a direction orthogonal to the insulating layer 30. positioned.
  • the second magnetoresistance elements 330a and 330b three patterns 330 of the same shape including eight second unit patterns 370 folded back having a plurality of curved portions are connected in series.
  • the second magnetoresistance element 330 a three patterns 330 of the same shape are connected to each other by the wiring 147.
  • the second magnetoresistance element 330 b three patterns 330 having the same shape are connected to each other by the wiring 151.
  • the pattern 330 is formed in a thinner pattern than the double spiral pattern 320. Thereby, in the second magnetoresistance elements 330a and 330b, necessary electric resistance values are secured.
  • the current consumption of the magnetic sensor 3 can be reduced as the electric resistance value of the second magnetoresistance elements 330a and 330b is higher.
  • the second unit pattern 370 includes 14 curved portions B 1 to B 14 and 15 linear extension portions L 1 to L 15 between the start end 370 a and the end end 370 b. Have a fold. That is, the second unit pattern 370 has a bag-like shape with the start end 370a and the end end 370b as the mouth.
  • the second unit pattern 370 is bent at a right angle in each of the 14 curved portions B 1 to B 14 .
  • the second unit pattern 370 does not include a linear extension of 10 ⁇ m or more. That is, the length of each of the fifteen linear extensions L 1 to L 15 is shorter than 10 ⁇ m.
  • the pattern of the second magnetoresistance elements 330a and 330b is not limited to the above, and includes at least one second unit having a plurality of curved portions and folded without including a linear extending portion having a length of 10 ⁇ m or more. It should just contain the pattern.
  • the magnetoresistance effect of the second magnetoresistance elements 330a and 330b is suppressed, and the rate of change in resistance is significantly reduced.
  • the rate of change in resistance of the second magnetoresistance elements 330a and 330b is lower than the rate of change in resistance of the first magnetoresistance elements 320a and 320b.
  • the first magnetoresistance elements 320 a and 320 b have a double spiral pattern 320.
  • the double spiral pattern 320 is mainly configured by winding a substantially arc-shaped curved portion. Since the arc is an approximation when the number of polygon corners increases to infinity, the direction of the current flowing through the double spiral pattern 320 extends in substantially all directions (360 °) in the horizontal direction. There is. Therefore, the first magnetoresistance elements 320a and 320b can detect an external magnetic field over substantially all directions (360 °) in the horizontal direction.
  • the double spiral pattern 320 is formed of an S-shaped pattern 323 in which the central portion is formed of only the curved portion, and for the length adjustment of which the outer peripheral portion is formed of only the curved portion. It comprises the redundant parts 324 and 325. As described above, since each of the first magnetoresistance elements 320a and 320b does not include a linear extension, the anisotropy of magnetic field detection is reduced.
  • the circumferential direction of the double spiral pattern 320 is different such that the directions of the S-shaped patterns 323 of the first magnetoresistance elements 320a and 320b are different from each other. As a result, the isotropy of magnetic field detection is enhanced.
  • each of the second magnetoresistance elements 330a and 330b does not include a linear extending portion having a length of 10 ⁇ m or more, and each of the 14 curved portions B 1 to B 14 , And includes a second unit pattern 370 having a bag-like shape with the start end 370a and the end 370b as a mouth.
  • the direction of the current flowing through the second unit pattern 370 can be dispersed in the horizontal direction, and the anisotropy of the magnetoresistance effect of the second magnetoresistance elements 330a and 330b can be reduced.
  • the direction of the current flowing through the pattern 330 are dispersed in the horizontal direction, the second magneto resistive element 330a, the magnetoresistance effect of 330b Anisotropy can be reduced.
  • the circuit board can be manufactured by a simple manufacturing process. 300 can be manufactured.
  • the pattern 330 is formed thinner than the double spiral pattern 320, the magnetoresistance effect of the second magnetoresistance elements 330a and 330b is suppressed, and the rate of change in resistance of the second magnetoresistance elements 330a and 330b is extremely small. Become.
  • the detection sensitivity of the magnetic sensor 3 can be increased by increasing the potential difference generated between the midpoint 140 and the midpoint 141 when an external magnetic field is applied to the magnetic sensor 3. Further, since the electric resistance value of the second magnetoresistance elements 330a and 330b is high, a reduction in the potential difference generated between the midpoint 140 and the midpoint 141 when an external magnetic field of high magnetic field strength is applied to the magnetic sensor 3 Is relatively small, and the output characteristics of the magnetic sensor 3 can be stabilized.
  • first magnetic members 40 and two second magnetic members 50 are disposed on the insulating layer 30.
  • the thickness of each of the first magnetic member 40 and the second magnetic member 50 is, for example, 10 ⁇ m or more, preferably 20 ⁇ m or more and 150 ⁇ m or less. The thicknesses may be different from each other, but in the case where the thicknesses are the same, the two first magnetic members 40 and the two second magnetic members 50 are processed in the same step. The two first magnetic members 40 and the two second magnetic members 50 can be easily formed.
  • the first magnetic member 40 has a circular outer shape when viewed in the direction orthogonal to the insulating layer 30, and is a region inside the outer peripheral edge of the first magnetoresistance elements 320a and 320b. It is located in In the present embodiment, the first magnetic member 40 is located concentrically with the outer peripheral edge of the first magnetoresistive elements 320 a and 320 b when viewed from the direction orthogonal to the insulating layer 30.
  • the first magnetic member 40 when viewed from the direction perpendicular to the insulating layer 30, the first magnetic member 40 is the first magnetoresistive element of the first magnetoresistive elements 320a and 320b and the second magnetoresistive elements 330a and 330b. It covers only the central part of 320a and 320b. Therefore, as viewed in the direction orthogonal to the insulating layer 30, the first magnetic member 40 is surrounded by the outer peripheral portions of the first magnetoresistance elements 320a and 320b.
  • the second magnetic member 50 covers only the second magnetoresistance elements 330a and 330b of the first magnetoresistance elements 320a and 320b and the second magnetoresistance elements 330a and 330b, as viewed from the direction orthogonal to the insulating layer 30. ing.
  • the second magnetoresistive elements 330 a and 330 b are each positioned 7 ⁇ m away from the center of the second magnetic member 50 from the outer peripheral edge of the second magnetic member 50 as viewed in the direction orthogonal to the insulating layer 30. It is preferable to be located in the area.
  • the second magnetic member 50 is made of a magnetic material having high magnetic permeability and high saturation magnetic flux density, such as electromagnetic steel, mild steel, silicon steel, permalloy, supermalloy, nickel alloy, iron alloy or ferrite. In addition, these magnetic materials preferably have low coercivity.
  • the magnetic sensor 3 suppresses the resistance change of the second magnetoresistance elements 330a and 330b due to the perpendicular magnetic field, and the perpendicular magnetic field of the first magnetoresistance elements 320a and 320b by the first magnetic member 40. Detection sensitivity can be increased.
  • the first magnetic body member 40 performs the first magnetic body member 40 while suppressing the resistance change of the second magnetoresistive elements 330 a and 330 b due to the horizontal magnetic field.
  • the detection sensitivity of the horizontal magnetic field of the magnetoresistive elements 320a and 320b can be enhanced.
  • the reason why the detection sensitivity of the horizontal magnetic field of the first magnetoresistance elements 320a and 320b can be enhanced by the first magnetic body member 40 is that the first magnetoresistance elements 320a and 320b are covered by the first magnetic body member 40.
  • the strength of the horizontal magnetic field applied to the central portion of the first magnetic resistance element 320a, 320b is longer than the central portions of the first magnetic resistance elements 320a, 320b, the ratio of the resistance value in the entire pattern is large. Since the horizontal magnetic field emitted from the first magnetic member 40 at a high magnetic field strength is applied to the outer peripheral portion of the first magnetic member 40, the first magnetic resistance members 320a and 320b The intensity of the horizontal magnetic field applied to the
  • the vertical magnetic field and the horizontal magnetic field can be detected with high sensitivity.
  • the magnetic sensor 3 according to the sixth embodiment of the present invention by including the plurality of first unit patterns in which the first magnetoresistance elements 320a and 320b are arranged concentrically, the isotropy of detection of the horizontal magnetic field is obtained. high.
  • the second magnetoresistance elements 330a and 330b are magnetically shielded by the second magnetic member 50 and hardly detect the vertical magnetic field and the horizontal magnetic field, the second magnetoresistance elements 330a and 330b are not necessarily detected.
  • the rate of change in resistance may not be smaller than the rate of change in resistance of the first magnetoresistance elements 320a and 320b.
  • the second conductor portion 70 is provided between the second magnetic member 50 and the circuit board 300, and the second conductor portion 70 includes: As viewed in the Z-axis direction which is a direction orthogonal to the insulating layer 30, the through holes 70h are provided.
  • the contact area between the second conductor portion 70 and the circuit board 300 can be reduced, and the stress acting on the contact interface between the second conductor portion 70 and the insulating layer 30 can be dispersed.
  • the stress acting on the second magnetoresistance elements 130a and 130b from the second magnetic member 50 through the second conductor portion 70 can be reduced, and a decrease in the output accuracy of the magnetic sensor can be suppressed.
  • generation of a crack in the insulating layer 30 due to the stress acting on the insulating layer 30 from the second magnetic member 50 through the second conductor portion 70 can be suppressed. Thereby, it can suppress that the reliability of the magnetic sensor 3 falls.
  • the isotropy of detection of the horizontal magnetic field is high, and a weak vertical magnetic field can be detected, and above the magnetoresistive element It is possible to suppress the decrease in output accuracy due to the stress acting on the magnetoresistive element from the provided structure.
  • the configuration of the first magnetic member 40 according to the fourth embodiment may be applied to the second magnetic member 50. In this case, the magnetic sensor 3 does not include the second conductor portion 70.
  • the magnetic sensor according to the seventh embodiment of the present invention is different from the magnetic sensor 3 according to the sixth embodiment of the present invention mainly in the pattern of each of the first and second magnetoresistance elements. The description of the same configuration as that of the magnetic sensor 3 according to the sixth embodiment will not be repeated.
  • FIG. 32 is a perspective view showing a configuration of a magnetic sensor according to Embodiment 7 of the present invention.
  • FIG. 33 is a plan view of the magnetic sensor of FIG. 32 as viewed in the direction of arrow XXXIII.
  • the magnetic sensor 4 according to the seventh embodiment of the present invention includes a circuit board 400, two first magnetic members 40 and two first magnetic members 40 provided above the circuit board 400. And 2 a magnetic member 50.
  • two first conductor parts 60 and two second conductor parts 70 are provided on the circuit board 400.
  • the insulating layer 30 is provided on the surface layer of the circuit board 400, and each of the two first conductor parts 60 and the two second conductor parts 70 is located on the insulating layer 30.
  • the first magnetic member 40 covers the corresponding first conductor portion 60 as viewed in the Z-axis direction which is a direction orthogonal to the insulating layer 30.
  • the second magnetic member 50 covers the corresponding second conductor portion 70 as viewed in the Z-axis direction which is a direction orthogonal to the insulating layer 30.
  • the circuit board 400 of the magnetic sensor 4 according to the seventh embodiment of the present invention is provided with four magnetoresistive elements which are electrically connected to each other by wires to form a Wheatstone bridge type bridge circuit.
  • the four magnetoresistance elements consist of two sets of first magnetoresistance elements and second magnetoresistance elements.
  • the magnetic sensor 4 includes a first magnetoresistance element 420a and a second magnetoresistance element 430a, and a first magnetoresistance element 420b and a second magnetoresistance element 430b.
  • the first magnetoresistance elements 420 a and 420 b have a double spiral pattern as viewed from the direction orthogonal to the insulating layer 30.
  • the two double spiral patterns are arranged concentrically so as to be arranged in the radial direction of the imaginary circle along the circumference of the imaginary circle when viewed in the direction orthogonal to the insulating layer 30, and connected to each other. Including patterns.
  • the double spiral pattern is a double spiral of one spiral pattern which is a first unit pattern, the other spiral pattern which is a first unit pattern, and one spiral pattern and the other spiral pattern. It includes an S-shaped pattern connected at the center of the pattern.
  • the S-shaped pattern does not include a linear extension, and is formed only of a curved portion.
  • the first magnetoresistance element 420a and the first magnetoresistance element 420b have different directions in the circumferential direction of the double spiral pattern so that the directions of the S-shaped patterns are different from each other.
  • the first magnetoresistive element 420a and the first magnetoresistive element 420b have a 90 ° difference in the circumferential direction of the double spiral pattern such that the S-shaped pattern has a 90 ° difference in direction. ing.
  • the double spiral pattern may be wound in the opposite direction, and in this case, the central portion of the double spiral pattern is formed of an inverted S-shaped pattern including only a curved portion. That is, one spiral pattern and the other spiral pattern are connected by the reverse S-shaped pattern.
  • the second magnetoresistance elements 430a and 430b are located outside the outer peripheral edge of the first magnetoresistance elements 420a and 420b when viewed from the direction orthogonal to the insulating layer 30.
  • the second magnetoresistance elements 430 a and 430 b have a meandering pattern as viewed from the direction orthogonal to the insulating layer 30.
  • the meandering pattern of the second magnetoresistance elements 430a and 430b is formed to have the same thickness as the double spiral pattern of the first magnetoresistance elements 420a and 420b. However, the thickness of the meandering pattern of the second magnetoresistance elements 430a and 430b may be thinner than the thickness of the double spiral pattern of the first magnetoresistance elements 420a and 420b.
  • the first magnetic member 40 has a circular outer shape when viewed in the direction orthogonal to the insulating layer 30, and is a region inside the outer peripheral edge of the first magnetoresistance elements 420a and 420b. It is located in In the present embodiment, the first magnetic member 40 is concentric with the outer peripheral edge of the first magnetoresistance elements 420 a and 420 b when viewed from the direction orthogonal to the insulating layer 30.
  • the first magnetic member 40 when viewed from the direction perpendicular to the insulating layer 30, the first magnetic member 40 is the first magnetoresistive element of the first magnetoresistive elements 420a and 420b and the second magnetoresistive elements 430a and 430b. It covers only the central part of 420a and 420b. Therefore, when viewed in the direction orthogonal to the insulating layer 30, the first magnetic member 40 is surrounded by the outer peripheral portions of the first magnetoresistance elements 420a and 420b.
  • the second magnetic member 50 covers only the second magnetoresistance elements 430a and 430b of the first magnetoresistance elements 420a and 420b and the second magnetoresistance elements 430a and 430b, as viewed from the direction orthogonal to the insulating layer 30. ing.
  • the magnetic sensor 4 according to the seventh embodiment of the present invention suppresses the resistance change of the second magnetoresistance elements 430a and 430b due to the perpendicular magnetic field, and the perpendicular magnetic field of the first magnetoresistance elements 420a and 420b by the first magnetic member 40. Detection sensitivity can be increased.
  • the first magnetic body member 40 performs the first magnetic body member 40 while suppressing the resistance change of the second magnetoresistive elements 430 a and 430 b due to the horizontal magnetic field.
  • the detection sensitivity of the horizontal magnetic field of the magnetoresistive elements 420a and 420b can be enhanced.
  • the vertical magnetic field and the horizontal magnetic field can be detected with high sensitivity.
  • the magnetic sensor 4 according to Embodiment 7 of the present invention includes a plurality of first unit patterns in which the first magnetoresistance elements 420a and 420b are arranged concentrically, so that the isotropy of detection of the horizontal magnetic field is obtained. high.
  • the second magnetoresistance elements 430a and 430b are magnetically shielded by the second magnetic member 50 and hardly detect the vertical magnetic field and the horizontal magnetic field, the second magnetoresistance elements 430a and 430b are not necessarily detected.
  • the rate of change in resistance does not have to be smaller than the rate of change in resistance of the first magnetoresistance elements 420a and 420b.
  • the isotropy of detection of the horizontal magnetic field is high, and a weak vertical magnetic field can be detected, and above the magnetoresistive element It is possible to suppress the decrease in output accuracy due to the stress acting on the magnetoresistive element from the provided structure.
  • Embodiment 8 a magnetic sensor according to Embodiment 8 of the present invention will be described with reference to the drawings.
  • the patterns of the first and second magnetic resistance elements and the shape of the first magnetic member mainly refer to the magnetic sensor according to the first embodiment of the present invention.
  • the configuration is the same as that of the magnetic sensor 1 according to the first embodiment of the present invention, and therefore the description will not be repeated.
  • FIG. 34 is a plan view showing the configuration of the magnetic sensor according to Embodiment 8 of the present invention.
  • FIG. 35 is a plan view showing a pattern of the first magnetoresistive element of the magnetic sensor according to Embodiment 8 of the present invention.
  • FIG. 36 is a plan view showing a pattern of the second magnetoresistance element of the magnetic sensor according to Embodiment 8 of the present invention.
  • the magnetic sensor 5 according to Embodiment 8 of the present invention includes a circuit board 500 and two first magnetic members 45 provided above the circuit board 500.
  • two first conductor portions are provided on the circuit board 500.
  • the first magnetic member 45 covers the corresponding first conductive portion as viewed in the Z-axis direction which is a direction orthogonal to the insulating layer 30.
  • the first conductor portion has a substantially regular octagonal outer shape when viewed from the Z-axis direction which is a direction orthogonal to the insulating layer 30.
  • a through hole penetrating in the Z-axis direction which is a direction orthogonal to the insulating layer 30 is provided.
  • the imaginary circle C 5 includes four first unit patterns connected to each other are arranged side by side in the radial direction of the virtual circle C 5 along the circumference.
  • Each of the four first unit pattern is located along a virtual C-shape C 51 which portion positioned wiring 146,148,150,152 in the circumference of the virtual circle C 5 is opened.
  • Each of the four first unit pattern is a C-shaped pattern 521 which is arranged concentrically so as to be arranged in a radial direction of the virtual circle C 5 along the virtual C-shape C 51.
  • the four C-shaped patterns 521 are alternately connected to each other at one end and the other end sequentially from the inside.
  • C-shaped pattern 521 which one ends are connected are connected to each other by linear pattern 522 extending in the radial direction of the virtual circle C 5.
  • C-shaped pattern 521 and the other end are connected to each other are connected to each other by a linear pattern 523 extending in the radial direction of the virtual circle C 5.
  • the pattern 520 of the first magnetoresistance elements 520 a and 520 b includes two linear patterns 522 and one linear pattern 523. Thus, four C-shaped patterns 521 are connected in series.
  • the outer peripheral edge of the outermost C-shaped pattern 521 is the outer peripheral edge of the first magnetoresistance elements 520a and 520b.
  • the inner peripheral edge of the C-shaped pattern 521 located at the innermost side becomes the inner peripheral edge of the first magnetoresistance elements 520a and 520b.
  • the first magnetoresistance element 520a and the first magnetoresistance element 520b have different circumferential directions such that the virtual C-shape C 51 has a different orientation. That is, the first magnetoresistance element 520a and the first magnetoresistance element 520b have different circumferential directions of the pattern 520 such that the C-shaped patterns 521 have different directions.
  • the first magnetoresistance element 520 a and the first magnetoresistance element 520 b have the circumferential direction of the pattern 520 different by 90 ° such that the C-shaped patterns 521 are different from each other by 90 °. .
  • the second magnetoresistance element 530a, 530b when viewed from a direction perpendicular to the insulating layer 30, situated in the center of the virtual circle C 5, first magnetoresistive element 520a, 520b It is surrounded by That is, the second magnetoresistive elements 530 a and 530 b are located inside the inner peripheral edge of the first magnetoresistive elements 520 a and 520 b when viewed in the direction orthogonal to the insulating layer 30.
  • Second magnetoresistance element 530a is connected to the wiring 146, 148 led from the center of the virtual circle C 5 to the outside of the virtual circle C 5.
  • Second magnetoresistance element 530b is connected to the wiring 150, 152 led from the center of the virtual circle C 5 to the outside of the virtual circle C 5.
  • the second magnetoresistance elements 530 a and 530 b have a double spiral pattern 530 as viewed from the direction orthogonal to the insulating layer 30.
  • the double spiral pattern 530 has one spiral pattern 531 which is one of the two second unit patterns, the other spiral pattern 532 which is the other one of the two second unit patterns, And an inverted S-shaped pattern 533 connecting one spiral pattern 531 and the other spiral pattern 532 at the center of the double spiral pattern 530.
  • the reverse S-shaped pattern 533 is composed of a plurality of linear extension portions whose length is shorter than 10 ⁇ m.
  • the double spiral pattern 530 is formed to have the same thickness as the pattern 520. Therefore, each of the one spiral pattern 531 and the other spiral pattern 532 has the same thickness as that of each of the four C-shaped patterns 521. However, the thickness of the double spiral pattern 530 may be thinner than the thickness of the pattern 520.
  • the double spiral pattern 530 has a shape substantially point-symmetrical with respect to the center of the virtual circle C 5. That is, the double spiral pattern 530 has a substantially 180 ° rotationally symmetrical shape with respect to the center of the virtual circle C 5.
  • the second magnetoresistance element 530a and the second magnetoresistance element 530b have different circumferential directions of the double spiral pattern 530 such that the directions of the inverted S-shaped patterns 533 are different from each other. ing.
  • the second magnetoresistive element 530 a and the second magnetoresistive element 530 b have a circumferential direction of the double spiral pattern 530 such that the directions of the inverted S-shaped patterns 533 differ from each other by 90 °. 90 ° different.
  • the first magnetoresistance elements 520 a and 520 b have a C-shaped pattern 521.
  • the C-shaped pattern 521 is constituted by approximately seven sides out of eight sides constituting an approximately regular octagon. As described above, since the first magnetoresistance elements 520a and 520b are constituted by most of the sides constituting the polygon, the anisotropy of the magnetic field detection is reduced.
  • the circumferential direction of the pattern 520 is different so that the directions of the C-shaped patterns 521 of the first magnetoresistance element 520a and the first magnetoresistance element 520b are different from each other. Because of this, the isotropy of magnetic field detection is high.
  • the second magnetoresistance elements 530 a and 530 b have a double spiral pattern 530.
  • the double spiral pattern 530 is mainly configured by winding the sides forming a substantially regular octagon.
  • the circumferential direction of the double spiral pattern 530 is such that the directions of the reverse S-shaped patterns 533 of the second magnetoresistance element 530a and the second magnetoresistance element 530b are different from each other. Is different, the isotropy of the magnetoresistance effect is high.
  • the magnetic sensor 5 since the second magnetoresistance elements 530a and 530b are disposed inside the first magnetoresistance elements 520a and 520b, the magnetic sensor 5 can be miniaturized. Further, in the magnetic sensor 5 as well, it is not necessary to three-dimensionally extend the wiring connecting the first magnetoresistance elements 520a and 520b and the second magnetoresistance elements 530a and 530b, so the circuit board 500 is manufactured by a simple manufacturing process. It is possible.
  • the first magnetic member 45 has a regular octagonal outer shape as viewed in the direction orthogonal to the insulating layer 30, and is inside the outer peripheral edge of the first magnetoresistance elements 520a and 520b. Located in the area of Here, the region inside the outer peripheral edge of the first magnetoresistance elements 520a and 520b is connected with the outer peripheral edge of the first magnetoresistance elements 520a and 520b by a virtual straight line when viewed from the direction orthogonal to the insulating layer 30.
  • the first magnetic member 45 is located in a region inside the inner peripheral edge of the first magnetoresistive elements 520 a and 520 b when viewed in the direction orthogonal to the insulating layer 30.
  • the first magnetic member 45 may be located in a region including the region on the inner peripheral edge of the first magnetoresistive elements 520 a and 520 b and the region inside the inner peripheral edge as viewed from the direction orthogonal to the insulating layer 30.
  • the inner peripheral edge of the first magnetoresistance elements 520a and 520b is connected by a virtual straight line as viewed from the direction orthogonal to the insulating layer 30 with the region inside the inner peripheral edges of the first magnetoresistance elements 520a and 520b.
  • the first magnetic member 45 is concentric with the outer peripheral edge of the first magnetoresistance elements 520 a and 520 b when viewed from the direction orthogonal to the insulating layer 30.
  • the first magnetic member 45 is a second magnetoresistive element of the first magnetoresistive elements 520 a and 520 b and the second magnetoresistive elements 530 a and 530 b when viewed from the direction orthogonal to the insulating layer 30. It covers only 530a and 530b. Therefore, when viewed from the direction orthogonal to the insulating layer 30, a half or more of the entire periphery of the first magnetic member 40 is surrounded by the first magnetoresistance elements 120a and 120b.
  • the vertical magnetic field and the horizontal magnetic field can be detected with high sensitivity.
  • the isotropy of detection of the horizontal magnetic field is obtained by including the plurality of first unit patterns in which the first magnetoresistance elements 520a and 520b are arranged in a polygonal shape. high.
  • each of the first magnetoresistance elements 520a and 520b, the second magnetoresistance elements 530a and 530b, and the first magnetic member 45 has a shape along a concentric regular octagon.
  • these shapes are not limited to the above, and may be shapes along concentric polygons. As the number of corners of this polygon is increased, the isotropy of detection of the horizontal magnetic field of the first magnetoresistance elements 520a and 520b can be made higher.
  • the second magnetoresistive elements 530a and 530b are magnetically shielded by the first magnetic member 45 and hardly detect the vertical magnetic field and the horizontal magnetic field, the second magnetoresistive elements 530a and 530b are not necessarily detected.
  • the rate of change in resistance may not be smaller than the rate of change in resistance of the first magnetoresistance elements 520a and 520b.
  • the isotropy of detection of a horizontal magnetic field is high using a magnetoresistance element, and a weak vertical magnetic field can also be detected, and above the magnetoresistance element. It is possible to suppress the decrease in output accuracy due to the stress acting on the magnetoresistive element from the provided structure.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)

Abstract

Le capteur magnétique selon l'invention comporte: un élément magnéto-sensible; une couche d'isolation recouvrant l'élément magnéto-sensible; un premier corps électro-conducteur (60) situé sur la couche d'isolation; et un premier composant magnétique (40) situé sur le premier corps électro-conducteur (60) et recouvrant ce premier corps électro-conducteur (60) dans une vue depuis une direction perpendiculaire à la couche d'isolation. L'élément magnéto-sensible possède un bord périphérique externe. Le premier composant magnétique (40), dans une vue depuis une direction perpendiculaire à la couche d'isolation, est situé dans une zone davantage côté interne que le bord périphérique externe de l'élément magnéto-sensible. Dans le premier corps électro-conducteur (60) est située une rainure traversante ou un trou traversant, laquelle est traversante dans une direction perpendiculaire à la couche d'isolation. Le premier composant magnétique (40), dans une vue depuis une direction perpendiculaire à la couche d'isolation, est situé de façon à longer la rainure traversante ou le trou traversant.
PCT/JP2018/043774 2017-12-04 2018-11-28 Capteur magnétique WO2019111782A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017232854 2017-12-04
JP2017-232854 2017-12-04

Publications (1)

Publication Number Publication Date
WO2019111782A1 true WO2019111782A1 (fr) 2019-06-13

Family

ID=66751010

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2018/043774 WO2019111782A1 (fr) 2017-12-04 2018-11-28 Capteur magnétique

Country Status (1)

Country Link
WO (1) WO2019111782A1 (fr)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003142752A (ja) * 2001-11-01 2003-05-16 Asahi Kasei Corp 磁気センサの製造方法
JP2010159982A (ja) * 2009-01-06 2010-07-22 Asahi Kasei Electronics Co Ltd 半導体装置及びその製造方法
EP2814065A2 (fr) * 2013-06-12 2014-12-17 MagnaChip Semiconductor Ltd. Capteur magnétique et son procédé de fabrication
JP2015118067A (ja) * 2013-12-20 2015-06-25 アルプス電気株式会社 磁気検知装置
WO2016013345A1 (fr) * 2014-07-24 2016-01-28 株式会社村田製作所 Capteur magnétique
JP2016173317A (ja) * 2015-03-17 2016-09-29 エスアイアイ・セミコンダクタ株式会社 半導体装置
WO2017209169A1 (fr) * 2016-05-31 2017-12-07 株式会社村田製作所 Capteur magnétique

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003142752A (ja) * 2001-11-01 2003-05-16 Asahi Kasei Corp 磁気センサの製造方法
JP2010159982A (ja) * 2009-01-06 2010-07-22 Asahi Kasei Electronics Co Ltd 半導体装置及びその製造方法
EP2814065A2 (fr) * 2013-06-12 2014-12-17 MagnaChip Semiconductor Ltd. Capteur magnétique et son procédé de fabrication
JP2015118067A (ja) * 2013-12-20 2015-06-25 アルプス電気株式会社 磁気検知装置
WO2016013345A1 (fr) * 2014-07-24 2016-01-28 株式会社村田製作所 Capteur magnétique
JP2016173317A (ja) * 2015-03-17 2016-09-29 エスアイアイ・セミコンダクタ株式会社 半導体装置
WO2017209169A1 (fr) * 2016-05-31 2017-12-07 株式会社村田製作所 Capteur magnétique

Similar Documents

Publication Publication Date Title
JP6424889B2 (ja) 磁気センサ
JP6369548B2 (ja) 磁気センサ
US9891293B2 (en) Magnetic sensor device preventing concentration of magnetic fluxes to a magnetic sensing element
JP6658676B2 (ja) 電流センサ
JPWO2017169156A1 (ja) 平衡式磁界検知装置
WO2017199519A1 (fr) Dispositif de détection magnétique du type à équilibre
WO2019111766A1 (fr) Capteur magnétique
WO2017209169A1 (fr) Capteur magnétique
WO2014156751A1 (fr) Capteur magnétique
WO2019111765A1 (fr) Capteur magnétique
JP6064656B2 (ja) センサ用磁気抵抗素子、およびセンサ回路
JP5413866B2 (ja) 磁気検出素子を備えた電流センサ
WO2019111782A1 (fr) Capteur magnétique
WO2022018978A1 (fr) Capteur magnétique
JP2008209224A (ja) 磁気センサ
WO2019111781A1 (fr) Capteur magnétique
JP6237903B2 (ja) 磁気センサ
WO2019111780A1 (fr) Capteur magnétique
WO2017199787A1 (fr) Capteur magnétique
CN110998349B (zh) 磁传感器
JP4984962B2 (ja) 磁気式角度センサ
WO2023162584A1 (fr) Capteur magnétique

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18885902

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18885902

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: JP