WO2017209169A1 - Capteur magnétique - Google Patents

Capteur magnétique Download PDF

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Publication number
WO2017209169A1
WO2017209169A1 PCT/JP2017/020202 JP2017020202W WO2017209169A1 WO 2017209169 A1 WO2017209169 A1 WO 2017209169A1 JP 2017020202 W JP2017020202 W JP 2017020202W WO 2017209169 A1 WO2017209169 A1 WO 2017209169A1
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WO
WIPO (PCT)
Prior art keywords
magnetic
magnetoresistive element
magnetoresistive
pattern
insulating layer
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PCT/JP2017/020202
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English (en)
Japanese (ja)
Inventor
修二 岡部
弘毅 堤
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株式会社村田製作所
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Publication of WO2017209169A1 publication Critical patent/WO2017209169A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Definitions

  • the present invention relates to a magnetic sensor, and more particularly to a magnetic sensor including a magnetoresistive element.
  • Patent Document 1 Japanese Patent Application Laid-Open No. 2013-44641
  • Patent Document 2 International Publication No. 2015/182365
  • Patent Document 3 International Publication No. 2016/013345
  • the magnetic sensor described in Patent Document 1 is connected to each other to form a bridge circuit, and each of the first, second, third, and fourth magnetoresistive elements formed in a meander shape.
  • a resistance element is provided.
  • the surfaces of the first magnetoresistive element, the second magnetoresistive element, the third magnetoresistive element, and the fourth magnetoresistive element are covered with an insulating film.
  • a magnetic flux collecting film made of a magnetic material is formed on the surfaces of the third magnetoresistive element and the fourth magnetoresistive element, which are so-called fixed resistors, with an insulating film interposed therebetween.
  • the magnetic sensor described in Patent Document 2 and Patent Document 3 includes a first magnetoresistive element and a second magnetoresistive element having a resistance change rate smaller than that of the first magnetoresistive element.
  • the first magnetoresistive element which is a so-called magnetosensitive element, includes a pattern arranged concentrically.
  • JP 2013-44641 A International Publication No. 2015/182365 International Publication No. 2016/013345
  • each of the first magnetoresistive element and the second magnetoresistive element which are so-called magnetosensitive elements, includes a meander-like pattern, the isotropic detection of the horizontal magnetic field is performed. Is low.
  • the first magnetoresistive element since the first magnetoresistive element includes a pattern arranged concentrically, the horizontal magnetic field detection is highly isotropic, but the weak vertical The magnetic field cannot be detected.
  • the present invention has been made in view of the above problems, and an object of the present invention is to provide a magnetic sensor that is highly isotropic in detecting a horizontal magnetic field and can detect a weak vertical magnetic field.
  • a magnetic sensor includes a first magnetoresistive element, a second magnetoresistive element that is electrically connected to the first magnetoresistive element to form a bridge circuit, the first magnetoresistive element, and the second magnetoresistive element. And at least a first magnetic member that is located on the insulating layer and is different from the first magnetic member and the second magnetic member that is different from the first magnetic member.
  • the first magnetoresistive element has at least an outer peripheral edge of the outer peripheral edge and the inner peripheral edge. The first magnetic member is located in a region inside the outer peripheral edge of the first magnetoresistive element when viewed from a direction orthogonal to the insulating layer.
  • the second magnetoresistive element is located in a region inside the inner peripheral edge of the first magnetoresistive element when viewed from the direction orthogonal to the insulating layer, or is covered with the first magnetic member, or the first magnetoresistive element It is located in a region outside the outer peripheral edge of the element and is covered with a second magnetic member.
  • the thickness of the first magnetic member is x ⁇ m
  • the first magnetic member is located concentrically with the outer peripheral edge of the first magnetoresistive element when viewed from the direction orthogonal to the insulating layer.
  • the 2nd magnetoresistive element is located in the area
  • the first magnetic member is located on the inner periphery of the first magnetoresistive element and in the region including the region inside the inner periphery as viewed from the direction orthogonal to the insulating layer.
  • the 2nd magnetoresistive element is located in the area
  • the first magnetic member covers only the second magnetoresistive element of the first magnetoresistive element and the second magnetoresistive element when viewed from the direction orthogonal to the insulating layer.
  • the second magnetoresistive element is located from the center of the first magnetic member to a position 7 ⁇ m away from the outer peripheral edge of the first magnetic member when viewed from the direction orthogonal to the insulating layer. Located in the area.
  • the second magnetoresistive element is located in a region outside the outer peripheral edge of the first magnetoresistive element when viewed from the direction orthogonal to the insulating layer, and is covered with the second magnetic member. Yes.
  • the first magnetic member covers only a part of the first magnetoresistive element of the first magnetoresistive element and the second magnetoresistive element when viewed from the direction orthogonal to the insulating layer.
  • the second magnetic member covers only the second magnetoresistive element of the first magnetoresistive element and the second magnetoresistive element when viewed from the direction orthogonal to the insulating layer.
  • the second magnetoresistive element is located from the center of the second magnetic member to a position 7 ⁇ m away from the outer peripheral edge of the second magnetic member when viewed from the direction orthogonal to the insulating layer. Located in the area.
  • the first magnetoresistive element includes a plurality of first unit patterns arranged concentrically and connected to each other when viewed from a direction orthogonal to the insulating layer.
  • a magnetic sensor that is highly isotropic for detecting a horizontal magnetic field and can detect a weak vertical magnetic field.
  • FIG. 6 is a magnetic flux diagram showing a magnetic flux density distribution when a vertical magnetic field is applied to the magnetic sensor according to Experimental Example 1.
  • FIG. 6 is a magnetic flux diagram showing a magnetic flux density distribution when a horizontal magnetic field is applied to the magnetic sensor according to Experimental Example 1.
  • FIG. 7 is a graph showing a relationship between a horizontal distance from an outer peripheral edge of a first magnetic member and a horizontal magnetic field strength when a vertical magnetic field or a horizontal magnetic field is applied to the magnetic sensor according to Experimental Example 1.
  • the thickness of the first magnetic member that is given to the relationship between the horizontal distance from the outer periphery of the first magnetic member and the horizontal magnetic field strength when a vertical magnetic field is applied to the magnetic sensor according to Experimental Example 2. It is a graph which shows the influence of thickness.
  • FIG. 1 is a perspective view showing a configuration of a magnetic sensor according to Embodiment 1 of the present invention.
  • FIG. 2 is a plan view of the magnetic sensor of FIG. 1 viewed from the direction of arrow II.
  • FIG. 3 is an equivalent circuit diagram of the magnetic sensor according to the first embodiment of the present invention.
  • an outer edge of a first magnetic member described later is indicated by a dotted line.
  • the width direction of a circuit board 100 described later is shown as an X-axis direction
  • the length direction of the circuit board 100 is shown as a Y-axis direction
  • the thickness direction of the circuit board 100 is shown as a Z-axis direction.
  • a differential amplifier, a temperature compensation circuit, and the like which will be described later are not shown.
  • the magnetic sensor 1 As shown in FIGS. 1 and 2, the magnetic sensor 1 according to Embodiment 1 of the present invention includes a circuit board 100 and two first magnetic members 40 provided on the circuit board 100.
  • the magnetic sensor 1 As shown in FIGS. 2 and 3, on the circuit board 100 of the magnetic sensor 1 according to the first embodiment of the present invention, four magnetoresistive elements that are electrically connected to each other by wiring to form a Wheatstone bridge type bridge circuit. Is provided.
  • the four magnetoresistive elements are composed of two sets of first and second magnetoresistive elements.
  • the magnetic sensor 1 includes a first magnetoresistive element 120a and a second magnetoresistive element 130a, and a first magnetoresistive element 120b and a second magnetoresistive element 130b.
  • the magnetic sensor 1 includes two sets of the first magnetoresistive element and the second magnetoresistive element.
  • the present invention is not limited to this, and at least one set of the first magnetoresistive element and the second magnetoresistive element is included. What is necessary is just to include an element.
  • a half bridge circuit is configured on the circuit board 100.
  • Each of the first magnetoresistive element and the second magnetoresistive element is an AMR (Anisotropic Magneto Resistance) element.
  • Each of the first magnetic sensor and the second magnetic sensor is replaced with an AMR element such as GMR (Giant Magneto Resistance), TMR (Tunnel Magneto Resistance), BMR (Ballistic Magneto Resistance), CMR (Colossal Magneto Resistance), etc.
  • a magnetoresistive element may be used.
  • the second magnetoresistive element 130a is a so-called fixed resistor that is magnetically shielded by the first magnetic member 40 and hardly detects a vertical magnetic field and a horizontal magnetic field.
  • the first magnetoresistive element 120a is a so-called magnetosensitive resistor whose electrical resistance value changes when an external magnetic field is applied.
  • the resistance change rate of the second magnetoresistive element 130a with respect to the external magnetic field is preferably lower than the resistance change rate of the first magnetoresistive element 120a with respect to the external magnetic field.
  • the second magnetoresistive element 130b is a so-called fixed resistor that is magnetically shielded by the first magnetic member 40 and hardly detects a vertical magnetic field and a horizontal magnetic field.
  • the first magnetoresistive element 120b is a so-called magnetosensitive resistor whose electrical resistance value changes when an external magnetic field is applied.
  • the resistance change rate of the second magnetoresistive element 130b with respect to the external magnetic field is preferably lower than the resistance change rate of the first magnetoresistive element 120b with respect to the external magnetic field.
  • the four magnetoresistive elements are electrically connected to each other by wiring formed on the semiconductor substrate 110. Specifically, the first magnetoresistive element 120 a and the second magnetoresistive element 130 a are connected in series by the wiring 146. The first magnetoresistive element 120 b and the second magnetoresistive element 130 b are connected in series by a wiring 150.
  • a midpoint 140 On the semiconductor substrate 110 of the circuit board 100, a midpoint 140, a midpoint 141, a power supply terminal (Vcc) 142, a ground terminal (Gnd) 143, and an output terminal (Out) 144 are further provided.
  • Vcc power supply terminal
  • Gnd ground terminal
  • Out output terminal
  • Each of the first magnetoresistive element 120 a and the second magnetoresistive element 130 b is connected to the midpoint 140. Specifically, the first magnetoresistive element 120 a and the midpoint 140 are connected by a wiring 145, and the second magnetoresistive element 130 b and the midpoint 140 are connected by a wiring 152.
  • Each of the first magnetoresistive element 120b and the second magnetoresistive element 130a is connected to the midpoint 141. Specifically, the first magnetoresistive element 120 b and the middle point 141 are connected by the wiring 149, and the second magnetoresistive element 130 a and the middle point 141 are connected by the wiring 148.
  • the wiring 146 is connected to a power supply terminal (Vcc) 142 to which current is input.
  • the wiring 150 is connected to a ground terminal (Gnd) 143.
  • the magnetic sensor 1 further includes a differential amplifier 160, a temperature compensation circuit 161, a latch and switch circuit 162, and a CMOS (Complementary Metal Oxide Semiconductor) driver 163.
  • CMOS Complementary Metal Oxide Semiconductor
  • the differential amplifier 160 has an input terminal connected to each of the middle point 140 and the middle point 141, and an output terminal connected to the temperature compensation circuit 161.
  • the differential amplifier 160 is connected to each of a power supply terminal (Vcc) 142 and a ground terminal (Gnd) 143.
  • the temperature compensation circuit 161 has an output terminal connected to the latch and switch circuit 162.
  • the temperature compensation circuit 161 is connected to each of a power supply terminal (Vcc) 142 and a ground terminal (Gnd) 143.
  • the output terminal of the latch and switch circuit 162 is connected to the CMOS driver 163.
  • the latch and switch circuit 162 is connected to each of a power supply terminal (Vcc) 142 and a ground terminal (Gnd) 143.
  • the output terminal of the CMOS driver 163 is connected to the output terminal (Out) 144.
  • the CMOS driver 163 is connected to each of a power supply terminal (Vcc) 142 and a ground terminal (Gnd) 143.
  • FIG. 4 is a cross-sectional view showing a laminated structure of a connection portion between the magnetoresistive element and the wiring in the circuit board of the magnetic sensor according to the first embodiment of the present invention. In FIG. 4, only the connection portion between the region R functioning as a magnetoresistive element and the region L functioning as a wiring is illustrated.
  • the four magnetoresistive elements are formed on a semiconductor substrate 110 made of Si or the like having a SiO 2 layer, a Si 3 N 4 layer or the like provided on the surface thereof.
  • the four magnetoresistive elements are formed by patterning the magnetic layer 10 made of an alloy containing Ni and Fe provided on the semiconductor substrate 110 by milling.
  • the thickness of the magnetic layer 10 is, for example, 0.04 ⁇ m.
  • the wiring is formed by patterning the conductive layer 20 made of Au or Al provided on the semiconductor substrate 110 by wet etching.
  • the conductive layer 20 is located directly above the magnetic layer 10 in the region L functioning as a wiring, and is not formed in the region R functioning as a magnetoresistive element. Therefore, as shown in FIG. 4, in the connection portion between the region R functioning as a magnetoresistive element and the region L functioning as a wiring, the end portion of the conductive layer 20 is located immediately above the magnetic layer 10. .
  • Each of the middle point 140, the middle point 141, the power supply terminal (Vcc) 142, the ground terminal (Gnd) 143, and the output terminal (Out) 144 is constituted by the conductive layer 20 positioned immediately above the semiconductor substrate 110.
  • a Ti layer (not shown) is provided immediately above the conductive layer 20.
  • An insulating layer 30 made of SiO 2 or the like is provided so as to cover the magnetoresistive element and the wiring. That is, the insulating layer 30 covers the first magnetoresistance elements 120a and 120b and the second magnetoresistance elements 130a and 130b.
  • FIG. 5 is a plan view showing a pattern of the first magnetoresistive element of the magnetic sensor according to the first embodiment of the present invention.
  • the pattern 120 of the first magnetoresistive elements 120 a and 120 b is the radial direction of the virtual circle C 1 along the circumference of the virtual circle C 1 when viewed from the direction orthogonal to the insulating layer 30.
  • Four first unit patterns arranged in a row and connected to each other. Note that the direction orthogonal to the insulating layer 30 is parallel to the direction orthogonal to the upper surface of the semiconductor substrate 110.
  • Each of the four first unit patterns is located along a virtual C-shape C 11 in which a portion where the wirings 146, 148, 150, and 152 are located on the circumference of the virtual circle C 1 is opened.
  • Each of the four first unit patterns is a C-shaped pattern 121 arranged concentrically so as to be aligned in the radial direction of the virtual circle C 1 along the virtual C-shape C 11 .
  • the four C-shaped patterns 121 are alternately connected to each other at one end and the other end in order from the inside.
  • the C-shaped patterns 121 whose one ends are connected to each other are connected to each other by a semicircular arc-shaped pattern 122.
  • the C-shaped patterns 121 to which the other ends are connected are connected to each other by a semicircular arc pattern 123.
  • the pattern 120 of the first magnetoresistive elements 120 a and 120 b includes two semicircular arc patterns 122 and one semicircular arc pattern 123. Thereby, the four C-shaped patterns 121 are connected in series.
  • the semicircular arc patterns 122 and 123 do not include a linearly extending portion, and are configured only from a curved portion.
  • the end of the outermost C-shaped pattern of the four C-shaped patterns 121 that is not connected to the semicircular arc-shaped pattern 122 is connected to the wiring 145 or the wiring 149 on which the conductive layer 20 is formed.
  • the end of the innermost C-shaped pattern of the four C-shaped patterns 121 that is not connected to the semicircular arc-shaped pattern 122 is the wiring 146 or wiring in which the conductive layer 20 is formed.
  • the electrical resistance values of the first magnetoresistive elements 120 a and 120 b can be adjusted by changing the formation position of the conductive layer 20 that is the connection position with the end of the C-shaped pattern 121.
  • the conductive layer 20 toward the region R functioning as the magnetoresistive element at the connection portion between the region R functioning as the magnetoresistive element and the region L functioning as the wiring shown in FIG.
  • the electrical resistance values of the first magnetoresistive elements 120a and 120b can be reduced.
  • the region L functioning as a wiring is reduced by shortening the conductive layer 20 toward the region L functioning as a wiring.
  • the electric resistance value of each of the first magnetoresistive elements 120a and 120b can be increased.
  • the adjustment of the electric resistance values of the first magnetoresistive elements 120a and 120b is performed by removing or additionally forming a part of the conductive layer 20, and therefore is preferably performed before the insulating layer 30 is provided.
  • the outer peripheral edge of the C-shaped pattern 121 located on the outermost side is the outer peripheral edge of the first magnetoresistive elements 120a and 120b.
  • the inner peripheral edge of the innermost C-shaped pattern 121 is the inner peripheral edge of the first magnetoresistive elements 120a and 120b.
  • the first magnetoresistive element 120 a and the first magnetoresistive element 120 b have different circumferential directions so that the virtual C-shaped C 11 has different directions. That is, the first magnetoresistive element 120a and the first magnetoresistive element 120b are different in the circumferential direction of the pattern 120 so that the directions of the C-shaped pattern 121 are different from each other.
  • the first magnetoresistive element 120a and the first magnetoresistive element 120b are different in the circumferential direction of the pattern 120 by 90 ° so that the directions of the C-shaped pattern 121 are different from each other by 90 °. .
  • FIG. 6 is a plan view showing a pattern of the second magnetoresistive element of the magnetic sensor according to the first embodiment of the present invention.
  • the second magnetoresistance element 130a, 130b when viewed from a direction perpendicular to the insulating layer 30, situated in the center of the virtual circle C 1, the first magnetoresistive element 120a, and 120b being surrounded. That is, the second magnetoresistive elements 130a and 130b are located inside the inner peripheral edges of the first magnetoresistive elements 120a and 120b when viewed from the direction orthogonal to the insulating layer 30.
  • Second magnetoresistance element 130a is connected to the wiring 146, 148 led from the center of the virtual circle C 1 to the outside of the virtual circle C 1.
  • Second magnetoresistance element 130b is connected to the wiring 150, 152 led from the center of the virtual circle C 1 to the outside of the virtual circle C 1.
  • the second magnetoresistive elements 130 a and 130 b have a double spiral pattern 130 when viewed from the direction orthogonal to the insulating layer 30.
  • the double spiral pattern 130 is one spiral pattern 131 that is one of the two second unit patterns, and the other spiral pattern 132 that is the other one of the two second unit patterns.
  • an inverted S-shaped pattern 133 that connects one spiral pattern 131 and the other spiral pattern 132 at the center of the double spiral pattern 130 is included.
  • the inverted S-shaped pattern 133 does not include a linear extension portion and is configured only from a curved portion.
  • the double spiral pattern 130 is formed with the same thickness as the pattern 120. Accordingly, each of the one spiral pattern 131 and the other spiral pattern 132 has the same thickness as each of the four C-shaped patterns 121.
  • the double spiral pattern 130 has a substantially point-symmetric shape with respect to the center of the virtual circle C 1 . That is, the double spiral pattern 130 has a shape that is approximately 180 ° rotationally symmetric with respect to the center of the virtual circle C 1 .
  • the second magnetoresistive element 130a and the second magnetoresistive element 130b are different in the circumferential direction of the double spiral pattern 130 so that the directions of the inverted S-shaped pattern 133 are different from each other. ing.
  • the circumferential direction of the double spiral pattern 130 is different between the second magnetoresistive element 130a and the second magnetoresistive element 130b so that the directions of the inverted S-shaped patterns 133 are different from each other by 90 °. It is 90 ° different.
  • the first magnetoresistive elements 120 a and 120 b have the C-shaped pattern 121.
  • the C-shaped pattern 121 is configured by an arc.
  • the C-shaped patterns 121 adjacent to each other are connected to each other by a semicircular arc pattern 122 or a semicircular arc pattern 123.
  • the 1st magnetoresistive element 120a, 120b does not include the linear extension part, the anisotropy of a magnetic field detection is reduced.
  • the circumferential direction of the pattern 120 is different so that the directions of the C-shaped pattern 121 of the first magnetoresistive element 120a and the first magnetoresistive element 120b are different from each other. As a result, the isotropy of magnetic field detection is increased.
  • the second magnetoresistive elements 130 a and 130 b have the double spiral pattern 130.
  • the double spiral pattern 130 is mainly configured by winding a substantially arc-shaped curved portion. Since the circular arc is an approximate shape when the number of polygon corners becomes infinitely large, the direction of the current flowing through the double spiral pattern 130 extends over almost all directions in the horizontal direction (360 °). Yes. Note that the horizontal direction is a direction parallel to the upper surface of the semiconductor substrate 110.
  • the double spiral pattern 130 is composed of an inverted S-shaped pattern 133 having a central portion composed only of a curved portion.
  • the 2nd magnetoresistive elements 130a and 130b do not include the linear extension part, the anisotropy of the magnetoresistive effect is reduced.
  • the circumferential direction of the double spiral pattern 130 so that the directions of the inverted S-shaped patterns 133 of the second magnetoresistive element 130a and the second magnetoresistive element 130b are different from each other.
  • the isotropic direction of the magnetoresistive effect is increased due to the difference in the direction of.
  • the double spiral pattern 130 has a shape that is approximately 180 ° rotationally symmetric with respect to the center of the virtual circle C 1 . Therefore, each of the second magnetoresistive element 130a and the second magnetoresistive element 130b has a slight anisotropy of the magnetoresistive effect.
  • each magnetic field can be changed.
  • the anisotropy of the resistance effect can be reduced mutually.
  • the direction in which the second magnetoresistive element 130a has the highest sensitivity coincides with the direction in which the second magnetoresistive element 130b has the lowest sensitivity, and the direction in which the second magnetoresistive element 130a has the lowest sensitivity. And the direction in which the second magnetoresistive element 130b has the highest sensitivity. Therefore, it is possible to suppress the potential difference generated between the midpoint 140 and the midpoint 141 when an external magnetic field is applied to the magnetic sensor 1 from fluctuating depending on the direction in which the external magnetic field is applied to the magnetic sensor 1.
  • the double spiral pattern 130 has a shape with a high density per unit area.
  • Second magnetoresistance element 130a, by 130b has a double spiral pattern 130, by increasing the pattern arranged in a virtual circle C 1, be second magnetoresistive element 130a, the 130b to the high-resistance it can. As the electric resistance values of the second magnetoresistive elements 130a and 130b are higher, the current consumption of the magnetic sensor 1 can be reduced.
  • the direction of the current flowing through the double spiral pattern 130 is dispersed in the horizontal direction to reduce the anisotropy of the magnetoresistive effect of each of the second magnetoresistive element 130a and the second magnetoresistive element 130b.
  • the output of the magnetic sensor 1 when the external magnetic field is 0 can be prevented from varying due to the influence of residual magnetization.
  • the double spiral pattern 130 may be wound in the opposite direction, and in this case, the central portion of the double spiral pattern 130 is formed of an S-shaped pattern consisting of only a curved portion. That is, one spiral pattern and the other spiral pattern are connected by an S-shaped pattern.
  • the magnetic sensor 1 since the second magnetoresistive elements 130a and 130b are arranged inside the first magnetoresistive elements 120a and 120b, the magnetic sensor 1 can be miniaturized. Further, in the magnetic sensor 1, since it is not necessary to three-dimensionally route the wiring connecting the first magnetoresistive elements 120a and 120b and the second magnetoresistive elements 130a and 130b, the circuit board 100 is manufactured by a simple manufacturing process. Is possible.
  • the thickness of the 1st magnetic body member 40 is 10 micrometers or more, for example, Preferably, they are 20 micrometers or more and 150 micrometers or less.
  • a vertical magnetic field deflected in a substantially horizontal direction by the first magnetic member 40 can be detected by the first magnetoresistive elements 120a and 120b.
  • the thickness of the first magnetic member 40 is 20 ⁇ m or more, the vertical magnetic field can be effectively deflected in the substantially horizontal direction by the first magnetic member 40, so that the first magnetic resistance elements 120a and 120b are weaker.
  • a vertical magnetic field can be detected.
  • the thickness of the 1st magnetic body member 40 is 150 micrometers or less, it can suppress that the formation time of the 1st magnetic body member 40 becomes long, and the mass productivity of the magnetic sensor 1 can be maintained.
  • the first magnetic member 40 has a circular outer shape when viewed from the direction orthogonal to the insulating layer 30 and is a region inside the outer peripheral edge of the first magnetoresistive elements 120 a and 120 b. Is located. Note that the regions inside the outer peripheral edges of the first magnetoresistive elements 120a and 120b are connected to both ends of the outer peripheral edges of the first magnetoresistive elements 120a and 120b by virtual lines when viewed from the direction orthogonal to the insulating layer 30. It is an area that is surrounded.
  • a region inside the outer peripheral edge of the first magnetoresistive elements 120 a and 120 b overlaps with more than half of the first magnetic member 40, and the first magnetic member More preferably, 2/3 or more of 40 overlap.
  • the first magnetic member 40 is located in a region inside the inner peripheral edges of the first magnetoresistive elements 120a and 120b when viewed from the direction orthogonal to the insulating layer 30.
  • the region inside the inner peripheral edge of the first magnetoresistive elements 120a and 120b is connected to both ends of the inner peripheral edge of the first magnetoresistive elements 120a and 120b by virtual lines when viewed from the direction orthogonal to the insulating layer 30. It is an area that is surrounded.
  • the first magnetic member 40 may be located on the inner periphery of the first magnetoresistive elements 120a and 120b and in the region including the region inside the inner periphery as viewed from the direction orthogonal to the insulating layer 30.
  • a region inside the inner peripheral edge of the first magnetoresistive elements 120 a and 120 b overlaps with more than half of the first magnetic member 40, and the first magnetic member More preferably, 2/3 or more of 40 overlap.
  • the first magnetic member 40 is located concentrically with the outer peripheral edges of the first magnetoresistive elements 120a and 120b when viewed from the direction orthogonal to the insulating layer 30.
  • the first magnetic member 40 is a second magnetoresistive element of the first magnetoresistive elements 120a and 120b and the second magnetoresistive elements 130a and 130b when viewed from the direction orthogonal to the insulating layer 30. Only 130a and 130b are covered. Therefore, the first magnetic member 40 is surrounded by the first magnetoresistive elements 120a and 120b when viewed from the direction orthogonal to the insulating layer 30.
  • the first magnetic member 40 is made of a magnetic material having high magnetic permeability and high saturation magnetic flux density, such as electromagnetic steel, soft iron steel, silicon steel, permalloy, supermalloy, nickel alloy, iron alloy, or ferrite. Moreover, it is preferable that these magnetic materials have low holding power.
  • the resistance of the first magnetoresistive elements 120a and 120b is used. The temperature dependency of the rate of change can be reduced.
  • the first magnetic member 40 is formed by plating, for example. Note that another thin layer may be provided between the insulating layer 30 and the first magnetic member 40.
  • an adhesion layer containing Ti (titanium) and Au (gold) are included between the insulating layer 30 and the first magnetic member 40. At least one of the electrode reaction layers may be formed.
  • Experimental Example 1 in which the influence of the first magnetic member 40 on the distribution of the vertical magnetic field and the horizontal magnetic field is verified by simulation will be described.
  • the outer shape of the first magnetic member 40 was a cylindrical shape having a diameter of 140 ⁇ m and a thickness of 100 ⁇ m.
  • the first magnetic member 40 was made of permalloy. Only the second magnetoresistive elements 130a and 130b of the first magnetoresistive elements 120a and 120b and the second magnetoresistive elements 130a and 130b are disposed above the second magnetoresistive elements 130a and 130b. It was arranged so as to cover.
  • the first magnetic member 40 is arranged so that the inner periphery of the first magnetoresistive elements 120a and 120b is adjacent to the outside of the outer periphery of the first magnetic member 40 when viewed from the direction orthogonal to the insulating layer 30. .
  • the strength of the applied vertical magnetic field or horizontal magnetic field was 30 mT.
  • FIG. 7 is a magnetic flux diagram showing a magnetic flux density distribution when a vertical magnetic field is applied to the magnetic sensor according to Experimental Example 1.
  • FIG. 8 is a magnetic flux diagram showing a magnetic flux density distribution when a horizontal magnetic field is applied to the magnetic sensor according to Experimental Example 1.
  • FIG. 9 shows the relationship between the horizontal distance from the outer peripheral edge of the first magnetic member and the horizontal magnetic field intensity when a vertical magnetic field or a horizontal magnetic field is applied to the magnetic sensor according to Experimental Example 1. It is a graph. 7 and 8, only the first magnetic body member 40, the first magnetoresistance elements 120a and 120b, and the second magnetoresistance elements 130a and 130b are shown when the magnetic sensor 1 is viewed from the horizontal direction.
  • the vertical axis represents the horizontal magnetic field strength (mT), and the horizontal axis represents the horizontal distance ( ⁇ m) from the outer periphery of the first magnetic member.
  • the distance in the horizontal direction from the outer peripheral edge of the first magnetic member is a positive value for the distance away from the outer peripheral edge of the first magnetic member 40, and the inner distance from the outer peripheral edge of the first magnetic member 40 is The distance is shown as a negative value.
  • a solid line V indicates the distribution of the magnetic field strength in the horizontal direction when the vertical magnetic field is applied, and a solid line H indicates the distribution of the magnetic field strength in the horizontal direction when the horizontal magnetic field is applied.
  • a magnetic field was applied to the second magnetoresistive elements 130a and 130b located immediately below the first magnetic member 40 in a substantially vertical direction. Therefore, the second magnetoresistive elements 130a and 130b hardly detected a vertical magnetic field.
  • a magnetic field deflected in a substantially horizontal direction as shown by an arrow in FIG. 7 was applied to the first magnetoresistive elements 120a and 120b located below the outer peripheral edge of the first magnetic body member 40. Therefore, the first magnetoresistive elements 120a and 120b were able to detect a vertical magnetic field as a magnetic field deflected in a substantially horizontal direction.
  • a horizontal magnetic field was hardly applied to the second magnetoresistance elements 130a and 130b located immediately below the first magnetic member 40. Therefore, the second magnetoresistive elements 130a and 130b hardly detected a horizontal magnetic field.
  • a horizontal magnetic field was applied to the first magnetoresistive elements 120 a and 120 b located below the outer peripheral edge of the first magnetic member 40. Therefore, the first magnetoresistive elements 120a and 120b were able to detect a horizontal magnetic field.
  • the horizontal magnetic field strength at a position outside the outer peripheral edge of the first magnetic member 40 was higher than 30 mT, which is the applied vertical magnetic field or horizontal magnetic field strength.
  • a position that is about 2 ⁇ m inward from the outer peripheral edge of the first magnetic member 40 and a position that is about 10 ⁇ m outward from the outer peripheral edge of the first magnetic member 40 was higher than 30 mT, which is the strength of the applied vertical magnetic field.
  • the horizontal magnetic field strength was higher than 30 mT, which is the strength of the applied horizontal magnetic field, at a position outside the outer peripheral edge of the first magnetic member 40.
  • the horizontal magnetic field strength is 1/3 of 30 mT, which is the applied vertical magnetic field or horizontal magnetic field strength. It was as follows. Therefore, it is preferable that the second magnetoresistive elements 130a and 130b are provided at positions spaced about 7 ⁇ m or more inward from the outer peripheral edge of the first magnetic member 40.
  • the horizontal direction was higher than 30 mT, which is the strength of the applied vertical magnetic field or horizontal magnetic field. Therefore, it is preferable that at least a part of the first magnetoresistance elements 120a and 120b is provided in at least a part of this region.
  • the first magnetoresistive elements 120 a and 120 b provided in the above-described region surround half or more of the entire outer circumference of the first magnetic member 40. Preferably, 2/3 or more of the entire outer periphery of the first magnetic member 40 is surrounded.
  • the first magnetic member 40 is located concentrically with the outer peripheral edge of the first magnetoresistive elements 120a and 120b when viewed from the direction orthogonal to the insulating layer 30, and is located on the first magnetoresistive elements 120a and 120b.
  • the horizontal magnetic field emitted from the outer peripheral edge of the first magnetic member 40 to the outside can be applied to the first magnetoresistive elements 120a and 120b substantially evenly in the circumferential direction.
  • the magnetic sensor 1 according to the first embodiment of the present invention suppresses the change in resistance of the second magnetoresistance elements 130a and 130b due to the vertical magnetic field, and the vertical magnetic field of the first magnetoresistance elements 120a and 120b. It was confirmed that the detection sensitivity of can be increased. That is, the first magnetoresistance elements 120a and 120b can detect a weak vertical magnetic field.
  • the magnetic sensor 1 according to Embodiment 1 of the present invention increases the detection sensitivity of the horizontal magnetic field of the first magnetoresistance elements 120a and 120b while suppressing the resistance change of the second magnetoresistance elements 130a and 130b due to the horizontal magnetic field. I was able to confirm that it was possible. That is, the first magnetoresistive elements 120a and 120b can detect a weak horizontal magnetic field.
  • FIG. 10 shows the first magnetic property given to the relationship between the horizontal distance from the outer peripheral edge of the first magnetic member and the horizontal magnetic field strength when a vertical magnetic field is applied to the magnetic sensor according to Experimental Example 2. It is a graph which shows the influence of the thickness of a body member.
  • the vertical axis indicates the horizontal magnetic field strength (mT)
  • the horizontal axis indicates the horizontal distance ( ⁇ m) from the outer periphery of the first magnetic member.
  • FIG. 11 is a graph showing the relationship between the distance in the horizontal direction from the outer peripheral edge of the first magnetic member at which the horizontal magnetic field strength is 1/3 of the peak value and the thickness of the first magnetic member. is there.
  • the distance in the horizontal direction from the outer peripheral edge of the first magnetic member is a positive value
  • the distance away from the outer peripheral edge of the first magnetic member 40 is a positive value
  • the distance away from the outer periphery to the inside is shown as a negative value.
  • the outer shape of the first magnetic member 40 was a columnar shape having a diameter of 140 ⁇ m.
  • the thickness x of the 1st magnetic body member 40 was made into five types, 10 micrometers, 20 micrometers, 50 micrometers, 100 micrometers, and 150 micrometers.
  • the first magnetic member 40 was made of permalloy.
  • the arrangement of the first magnetic member 40 was the same as in Experimental Example 1.
  • the strength of the applied vertical magnetic field was 30 mT.
  • the peak value of the magnetic field strength in the horizontal direction increased as the thickness x of the first magnetic member 40 increased.
  • the graph shown in FIG. 10 shows that the magnetic permeability of the first magnetic member 40 is small in the range of 10,000 to 100,000 of the magnetic permeability that can be taken by the permalloy, and the first magnetic member 40 is less dependent on the magnetic permeability. Even if changes, it hardly changes.
  • a horizontal magnetic field having an intensity of 1/3 or more of the peak value of the horizontal magnetic field intensity is applied to the first magnetoresistive elements 120a and 120b. Further, it is preferable that the strength of the horizontal magnetic field applied to the second magnetoresistive elements 130a and 130b is 1/10 or less of the peak value of the horizontal magnetic field strength.
  • the horizontal magnetic field strength is 1 / peak of the peak value in the region within 2 ⁇ m inward from the outer periphery of the first magnetic member 40. It was 3 or more.
  • the horizontal distance y from the outer peripheral edge to the outer side of the first magnetic member 40 at which the horizontal magnetic field intensity is 1/3 of the peak value is the thickness of the first magnetic member 40. It became longer as x became thicker.
  • the horizontal magnetic field strength is 1/3 or more of the peak value. Therefore, when viewed from the direction orthogonal to the insulating layer 30, the above formula (I) is expressed from the position 2 ⁇ m away from the outer periphery of the first magnetic member 40 to the outside from the outer periphery of the first magnetic member 40. In the region up to a position separated by y ⁇ m, the horizontal magnetic field intensity is 1/3 or more of the peak value.
  • the horizontal magnetic field strength is 1 / (peak) of the peak value in the region of 7 ⁇ m or more inward from the outer periphery of the first magnetic member 40. It was 10 or less. That is, in the region from the center of the first magnetic member 40 to a position 7 ⁇ m away from the outer peripheral edge of the first magnetic member 40 in the direction orthogonal to the insulating layer 30, the horizontal magnetic field strength was 1/10 or less of the peak value.
  • the first magnetoresistive elements 120a and 120b is viewed from the direction orthogonal to the insulating layer 30 from the position away from the outer peripheral edge of the first magnetic member 40 by 2 ⁇ m from the first magnetic member. It is preferable that it is located in at least a part of the region from the outer peripheral edge of 40 to the position separated by y ⁇ m as indicated by the above formula (I).
  • the second magnetoresistive elements 130 a and 130 b are located from the center of the first magnetic member 40 to a position 7 ⁇ m away from the outer peripheral edge of the first magnetic member 40 in the direction orthogonal to the insulating layer 30. It is preferable to be located in the region.
  • the magnetic sensor 1 according to Embodiment 1 of the present invention can detect a vertical magnetic field and a horizontal magnetic field with high sensitivity.
  • the magnetic sensor 1 according to the first embodiment of the present invention includes a plurality of first unit patterns in which the first magnetoresistive elements 120a and 120b are concentrically arranged, so that isotropic detection of the horizontal magnetic field is achieved. high.
  • the double spiral pattern 130 of the second magnetoresistive elements 130a and 130b is formed with the same thickness as the pattern 120 of the first magnetoresistive elements 120a and 120b. Therefore, even when the first magnetoresistive elements 120a and 120b and the second magnetoresistive elements 130a and 130b are formed in the same process, the processing of the first magnetoresistive elements 120a and 120b and the second magnetoresistive elements 130a and 130b is performed. Variations in accuracy are reduced, and the magnetic sensor 1 with stable output characteristics can be manufactured.
  • the double spiral pattern 130 may be formed in a pattern thinner than the pattern 120.
  • the magnetoresistive effect of the second magnetoresistive elements 130a and 130b is further smaller than the magnetoresistive effect of the first magnetoresistive elements 120a and 120b.
  • the magnetoresistive effect of the second magnetoresistive elements 130a and 130b is suppressed, and the resistance change rate of the second magnetoresistive elements 130a and 130b is significantly reduced.
  • the potential difference generated between the midpoint 140 and the midpoint 141 when an external magnetic field is applied to the magnetic sensor 1 can be increased, and the detection sensitivity of the magnetic sensor 1 can be increased. Further, since the electric resistance values of the second magnetoresistive elements 130a and 130b are high, the potential difference generated between the midpoint 140 and the midpoint 141 when an external magnetic field having a high magnetic field strength is applied to the magnetic sensor 1 is reduced. Is relatively small, and the output characteristics of the magnetic sensor 1 can be stabilized.
  • the second magnetoresistive elements 130a and 130b are magnetically shielded by the first magnetic member 40 and hardly detect the vertical magnetic field and the horizontal magnetic field, the second magnetoresistive elements 130a and 130b are not necessarily detected.
  • the resistance change rate may not be smaller than the resistance change rates of the first magnetoresistive elements 120a and 120b.
  • Embodiment 2 a magnetic sensor according to Embodiment 2 of the present invention will be described with reference to the drawings.
  • the magnetic sensor according to the second embodiment of the present invention is different from the magnetic sensor 1 according to the first embodiment of the present invention in that the pattern of the second magnetoresistive element is mainly different from the magnetic sensor according to the first embodiment of the present invention.
  • the description of the same configuration as that of the sensor 1 will not be repeated.
  • FIG. 12 is a plan view of a magnetic sensor according to Embodiment 2 of the present invention.
  • FIG. 13 is a plan view showing a pattern of the second magnetoresistive element of the magnetic sensor according to the second embodiment of the present invention.
  • the magnetic sensor 2 according to the second embodiment of the present invention includes a circuit board 200 and two first magnetic members 40 provided on the circuit board 200.
  • the pattern of the first magnetoresistive elements 120 a and 120 b of the magnetic sensor 2 according to the second embodiment of the present invention is a circle of the virtual circle C 2 when viewed from the direction orthogonal to the insulating layer 30.
  • including three first unit patterns connected to each other are arranged side by side in the radial direction of the virtual circle C 2 along the circumference.
  • Each of the three first unit pattern is located along a virtual C-shape C 21 a portion where the wiring 146,148,150,152 are located at the circumference of the virtual circle C 2 is opened.
  • Each of the three first unit patterns is a C-shaped pattern arranged so as to be aligned in the radial direction of the virtual circle C 2 along the virtual C-shaped C 21 .
  • a first magnetoresistive element 120a and the first magnetoresistive element 120b, the orientation of the virtual C-shaped C 21 are different in the circumferential direction of the orientation are different from each other. That is, the first magnetoresistive element 120a and the first magnetoresistive element 120b are different in the direction of the circumferential direction of the pattern so that the directions of the C-shaped pattern are different from each other.
  • the first magnetoresistive element 120a and the first magnetoresistive element 120b are different in the direction of the circumferential direction of the pattern by 90 ° so that the directions of the C-shaped patterns are different from each other by 90 °.
  • the second magnetoresistive elements 230 a and 230 b are located on the center side of the virtual circle C 2 when viewed from the direction orthogonal to the insulating layer 30 and are located on the first magnetoresistive elements 120 a and 120 b. being surrounded. That is, the second magnetoresistive elements 230a and 230b are located inside the inner peripheral edges of the first magnetoresistive elements 120a and 120b when viewed from the direction orthogonal to the insulating layer 30.
  • Second magnetoresistance element 230a, 230b is fourteen semicircular pattern is a second unit pattern arranged symmetrically so as to align in the radial direction of the virtual circle C 2 along the circumference of the virtual circle C 2
  • a pattern 230 including 231 is included.
  • the pattern 230 is formed with the same thickness as the pattern 120 of the first magnetoresistive elements 120a and 120b. However, the thickness of the pattern 230 may be smaller than the thickness of the pattern 120.
  • the 14 semicircular arc patterns 231 are alternately connected to each other at one end and the other end in order from the inside.
  • the semicircular arc patterns 231 whose one ends are connected to each other are connected to each other by a semicircular arc pattern 232.
  • the semicircular arc patterns 231 to which the other ends are connected are connected to each other by a semicircular arc pattern 233.
  • the semicircular arc patterns 231 that are located on the innermost side and symmetrical with each other are connected to each other at one end by a linearly extending portion 234.
  • the length of the linear extension 234 is shorter than 10 ⁇ m.
  • the pattern 230 of the second magnetoresistive elements 230a and 230b includes six semicircular arc patterns 232, six semicircular arc patterns 233, and a linear extension 234. Thereby, 14 semicircular arc patterns 231 are connected in series.
  • the semicircular arc patterns 232 and 233 do not include a linearly extending portion and are configured only from a curved portion.
  • the second magnetoresistive elements 230a and 230b have a semicircular arc pattern 231.
  • the semicircular arc pattern 231 is formed of an arc.
  • Two semicircular arc patterns 231 adjacent to each other are connected to each other by semicircular arc patterns 232 and 233. Since the second magnetoresistive elements 230a and 230b include only the linear extension part 234 having a length shorter than 10 ⁇ m, the anisotropy of magnetic field detection is reduced.
  • the direction of the circumferential direction of the pattern 230 is different between the second magnetoresistive element 230a and the second magnetoresistive element 230b.
  • the second magnetoresistive element 130a and the second magnetoresistive element 130b differ in the circumferential direction of the pattern 230 by 90 °. Thereby, each anisotropy of the magnetoresistive effect of the 2nd magnetoresistive element 230a and the 2nd magnetoresistive element 230b can be mutually reduced.
  • the magnetic sensor 2 since the second magnetoresistive elements 230a and 230b are arranged inside the first magnetoresistive elements 120a and 120b, the magnetic sensor 2 can be downsized. Also in the magnetic sensor 2, the circuit board 200 can be manufactured by a simple manufacturing process because it is not necessary to three-dimensionally route the wiring connecting the first magnetoresistive elements 120a and 120b and the second magnetoresistive elements 230a and 230b. Is possible.
  • the first magnetic member 40 has a second magnetoresistive of the first magnetoresistive elements 120 a and 120 b and the second magnetoresistive elements 230 a and 230 b when viewed from the direction orthogonal to the insulating layer 30. Only the elements 230a and 230b are covered.
  • the magnetic sensor 2 according to the present embodiment includes a plurality of first unit patterns in which the first magnetoresistive elements 120a and 120b are concentrically arranged, so that isotropic detection of the horizontal magnetic field is achieved. high.
  • the second magnetoresistive elements 230a and 230b are magnetically shielded by the first magnetic member 40 and hardly detect the vertical magnetic field and the horizontal magnetic field.
  • the resistance change rate may not be smaller than the resistance change rates of the first magnetoresistive elements 120a and 120b.
  • the magnetic sensor according to the third embodiment of the present invention is mainly composed of the pattern of each of the first magnetoresistive element and the second magnetoresistive element and the arrangement of the second magnetoresistive element. Since it is different from the magnetic sensor 1 according to the first embodiment, the description of the same configuration as that of the magnetic sensor 1 according to the first embodiment of the present invention will not be repeated.
  • FIG. 14 is a perspective view showing the configuration of the magnetic sensor according to Embodiment 3 of the present invention.
  • FIG. 15 is a plan view of the magnetic sensor of FIG. 14 viewed from the direction of the arrow XV.
  • the magnetic sensor 3 according to the third embodiment of the present invention includes a circuit board 300, two first magnetic members 40 provided on the circuit board 300, and two second magnetic members. A body member 50.
  • the circuit board 300 of the magnetic sensor 3 is provided with four magnetoresistive elements that are electrically connected to each other by wiring to form a Wheatstone bridge type bridge circuit.
  • the four magnetoresistive elements are composed of two sets of first and second magnetoresistive elements.
  • the magnetic sensor 3 includes a first magnetoresistive element 320a and a second magnetoresistive element 330a, and a first magnetoresistive element 320b and a second magnetoresistive element 330b.
  • FIG. 16 is a plan view showing a pattern of the first magnetoresistive element of the magnetic sensor according to the third embodiment of the present invention.
  • the first magnetoresistive elements 320 a and 320 b have a double spiral pattern 320 when viewed from the direction orthogonal to the insulating layer 30.
  • the double spiral pattern 320 is arranged in two concentric circles so as to be aligned in the radial direction of the virtual circle along the circumference of the virtual circle when viewed from the direction orthogonal to the insulating layer 30 and is connected to each other. Includes unit patterns.
  • the double spiral pattern 320 includes one spiral pattern 321 that is a first unit pattern, the other spiral pattern 322 that is a first unit pattern, and one spiral pattern 321 and the other spiral pattern 322. Are included at the center of the double spiral pattern 320.
  • the S-shaped pattern 323 does not include a linearly extending portion and is configured only from a curved portion.
  • the double spiral pattern 320 has length adjusting redundant portions 324 and 325 of the double spiral pattern 320 at each end of one spiral pattern 321 and the other spiral pattern 322.
  • the length adjusting redundant portions 324 and 325 are configured such that the ends of one spiral pattern 321 and the other spiral pattern 322 are folded back while being curved.
  • the length adjusting redundant part 324 provided in one spiral pattern 321 and the length adjusting redundant part 325 provided in the other spiral pattern 322 are mutually in the radial direction of the double spiral pattern 320.
  • Each of the length adjusting redundant portions 324 and 325 does not include a linearly extending portion, and is configured only by a curved portion.
  • the double spiral pattern 320 is connected to the conductive layer 20 constituting the wiring in the length adjusting redundant portions 324 and 325.
  • the electrical resistance values of the first magnetoresistive elements 320a and 320b can be adjusted by changing the connection position between the length adjusting redundant portions 324 and 325 and the conductive layer 20.
  • the conductive layer 20 toward the region R functioning as the magnetoresistive element at the connection portion between the region R functioning as the magnetoresistive element and the region L functioning as the wiring shown in FIG.
  • the region L functioning as a wiring By expanding the region L functioning as a wiring, the electric resistance value of each of the first magnetoresistance elements 320a and 320b can be reduced.
  • the region L functioning as a wiring is reduced by shortening the conductive layer 20 toward the region L functioning as a wiring.
  • the electrical resistance value of each of the first magnetoresistive elements 320a and 320b can be increased.
  • the adjustment of the electric resistance values of the first magnetoresistive elements 320a and 320b is performed by removing or additionally forming a part of the conductive layer 20, and thus is preferably performed before the insulating layer 30 is provided.
  • the double spiral pattern 320 has a substantially point-symmetric shape with respect to the center point of the double spiral pattern 320. That is, the double spiral pattern 320 has a shape that is approximately 180 ° rotationally symmetric with respect to the center point of the double spiral pattern 320.
  • the first magnetoresistive element 320a and the first magnetoresistive element 320b are different in the circumferential direction of the double spiral pattern 320 so that the directions of the S-shaped pattern 323 are different from each other. Yes.
  • the circumferential direction of the double spiral pattern 320 is 90 so that the first magnetoresistive element 320a and the first magnetoresistive element 320b are different from each other by 90 degrees in the S-shaped pattern 323. ° Different.
  • the double spiral pattern 320 may be wound in the opposite direction, and in this case, the central portion of the double spiral pattern 320 is constituted by an inverted S-shaped pattern including only a curved portion. That is, one spiral pattern 321 and the other spiral pattern 322 are connected by an inverted S-shaped pattern.
  • FIG. 17 is a plan view showing a pattern of the second magnetoresistive element of the magnetic sensor according to the third embodiment of the present invention.
  • FIG. 18 is a plan view showing a second unit pattern included in the pattern of the second magnetoresistive element of the magnetic sensor according to the third embodiment of the invention. In FIG. 17, only one of the three patterns 330 having the same shape included in the second magnetoresistive elements 330a and 330b is illustrated.
  • the second magnetoresistive elements 330 a and 330 b are located outside the outer peripheral edges of the first magnetoresistive elements 320 a and 320 b when viewed from the direction orthogonal to the insulating layer 30.
  • the second magnetoresistive elements 330a and 330b three patterns 330 having the same shape including the eight second unit patterns 370 having a plurality of bent portions and folded back are connected in series.
  • the second magnetoresistive element 330 a three patterns 330 having the same shape are connected to each other by the wiring 147.
  • the second magnetoresistive element 330 b three patterns 330 having the same shape are connected to each other by the wiring 151.
  • the pattern 330 is formed in a pattern thinner than the double spiral pattern 320. Thereby, in the 2nd magnetoresistive element 330a, 330b, the required electrical resistance value is ensured. As the electric resistance values of the second magnetoresistive elements 330a and 330b are higher, the current consumption of the magnetic sensor 3 can be reduced.
  • the eight second unit patterns 370 are arranged on the virtual circle C 3 and connected to each other.
  • the second unit pattern 370 includes 14 curved portions B 1 to B 14 and 15 linear extending portions L 1 to L 15 between the start end portion 370a and the end end portion 370b. And folded. That is, the second unit pattern 370 has a bag shape with the start end portion 370a and the end portion 370b as mouth portions.
  • the second unit pattern 370 is bent at a right angle in each of the 14 curved portions B 1 to B 14 .
  • the second unit pattern 370 does not include a linear extension portion having a length of 10 ⁇ m or more. That is, the length of each of the 15 linear extending portions L 1 to L 15 is shorter than 10 ⁇ m.
  • the pattern included in the second magnetoresistive elements 330a and 330b is not limited to the above, and includes at least one second folded portion including a plurality of curved portions without including a linear extension portion having a length of 10 ⁇ m or more. It only has to include a unit pattern.
  • the magnetoresistive effect of the second magnetoresistive elements 330a and 330b is suppressed, and the rate of change in resistance is significantly reduced.
  • the rate of change in resistance of the second magnetoresistive elements 330a and 330b is lower than the rate of change in resistance of the first magnetoresistive elements 320a and 320b.
  • the first magnetoresistive elements 320a and 320b have the double spiral pattern 320.
  • the double spiral pattern 320 is mainly configured by winding a substantially arc-shaped curved portion. Since the circular arc is an approximate form when the number of corners of the polygon becomes infinitely large, the direction of the current flowing through the double spiral pattern 320 extends over almost all directions (360 °) in the horizontal direction. Yes. Therefore, the first magnetoresistive elements 320a and 320b can detect an external magnetic field over substantially the entire horizontal direction (360 °).
  • the double spiral pattern 320 is composed of an S-shaped pattern 323 whose central portion is composed only of a curved portion, and whose outer peripheral portion is composed of only a curved portion. It consists of redundant parts 324 and 325.
  • each of the first magnetoresistive elements 320a and 320b does not include the linearly extending portion, so that the anisotropy of the magnetic field detection is reduced.
  • the circumferential direction of the double spiral pattern 320 is different so that the directions of the S-shaped patterns 323 of the first magnetoresistive elements 320a and 320b are different from each other. Therefore, the isotropy of magnetic field detection is high.
  • each of the second magnetoresistive elements 330a and 330b does not include a linearly extending portion having a length of 10 ⁇ m or more, and each of the 14 curved portions B 1 to B 14 . 2 includes a second unit pattern 370 that is bent at a right angle and has a bag-like shape with the start end portion 370a and the end end portion 370b as mouth portions.
  • the direction of the current flowing through the second unit pattern 370 can be dispersed in the horizontal direction, and the anisotropy of the magnetoresistive effect of the second magnetoresistive elements 330a and 330b can be reduced. Moreover, it can suppress that the output of the magnetic sensor 3 when an external magnetic field is 0 varies by the influence of residual magnetization.
  • the direction of the current flowing through the pattern 330 is dispersed in the horizontal direction, and the magnetoresistive effect of the second magnetoresistive elements 330 a and 330 b.
  • the anisotropy of can be reduced.
  • the circuit board can be manufactured with a simple manufacturing process. 300 can be manufactured.
  • the pattern 330 is formed in a pattern thinner than the double spiral pattern 320, the magnetoresistive effect of the second magnetoresistive elements 330a and 330b is suppressed, and the resistance change rate of the second magnetoresistive elements 330a and 330b is remarkably small. Become.
  • the potential difference generated between the midpoint 140 and the midpoint 141 when an external magnetic field is applied to the magnetic sensor 3 can be increased, and the detection sensitivity of the magnetic sensor 3 can be increased. Further, since the electric resistance values of the second magnetoresistive elements 330a and 330b are high, the potential difference generated between the midpoint 140 and the midpoint 141 when an external magnetic field having a high magnetic field strength is applied to the magnetic sensor 3 is reduced. Is relatively small, and the output characteristics of the magnetic sensor 3 can be stabilized.
  • first magnetic members 40 and two second magnetic members 50 are disposed on the insulating layer 30.
  • the thickness of each of the first magnetic member 40 and the second magnetic member 50 is, for example, not less than 10 ⁇ m, preferably not less than 20 ⁇ m and not more than 150 ⁇ m. Although these thicknesses may be different from each other, when the thicknesses are the same, the two first magnetic members 40 and the two second magnetic members 50 are processed in the same process. The two first magnetic members 40 and the two second magnetic members 50 can be easily manufactured.
  • the first magnetic member 40 has a circular outer shape when viewed from the direction orthogonal to the insulating layer 30 and is a region inside the outer peripheral edge of the first magnetoresistive elements 320 a and 320 b. Is located. In the present embodiment, the first magnetic member 40 is located concentrically with the outer peripheral edges of the first magnetoresistance elements 320a and 320b when viewed from the direction orthogonal to the insulating layer 30.
  • the first magnetic member 40 is the first magnetoresistive element of the first magnetoresistive elements 320a and 320b and the second magnetoresistive elements 330a and 330b when viewed from the direction orthogonal to the insulating layer 30. Only the center part of 320a, 320b is covered. Therefore, when viewed from a direction orthogonal to the insulating layer 30, the first magnetic member 40 is surrounded by the outer peripheral portions of the first magnetoresistance elements 320a and 320b.
  • the second magnetic member 50 covers only the second magnetoresistive elements 330a and 330b among the first magnetoresistive elements 320a and 320b and the second magnetoresistive elements 330a and 330b when viewed from the direction orthogonal to the insulating layer 30. ing.
  • the second magnetoresistive elements 330a and 330b are viewed from the direction orthogonal to the insulating layer 30 from the center of the second magnetic body member 50 to a position 7 ⁇ m away from the outer peripheral edge of the second magnetic body member 50. It is preferably located in the region.
  • the second magnetic member 50 is made of a magnetic material having a high magnetic permeability and high saturation magnetic flux density, such as electromagnetic steel, soft iron steel, silicon steel, permalloy, supermalloy, nickel alloy, iron alloy, or ferrite. Moreover, it is preferable that these magnetic materials have low holding power.
  • the vertical magnetic field of the first magnetoresistive elements 320a and 320b is suppressed by the first magnetic member 40 while suppressing the resistance change of the second magnetoresistive elements 330a and 330b due to the vertical magnetic field.
  • the detection sensitivity can be increased.
  • the magnetic sensor 3 uses the first magnetic member 40 to suppress the resistance change of the second magnetoresistive elements 330 a and 330 b due to the horizontal magnetic field by the second magnetic member 50.
  • the detection sensitivity of the horizontal magnetic field of the magnetoresistive elements 320a and 320b can be increased.
  • the reason why the detection sensitivity of the horizontal magnetic field of the first magnetoresistive elements 320a and 320b can be increased by the first magnetic body member 40 is that the first magnetoresistive elements 320a and 320b are covered by the first magnetic body member 40.
  • the strength of the horizontal magnetic field applied to the central portion of the first magnetoresistive element 320a, 320b is lower, but the first magnetoresistive element 320a, 320b has a longer circumference than the central portion of the first magnetoresistive element 320a, 320b and a large ratio of the resistance value in the entire pattern Since a horizontal magnetic field emitted from the first magnetic member 40 with a high magnetic field strength is applied to the outer periphery of the first magnetic member 40, the first magnetoresistive elements 320a and 320b are viewed by the first magnetic member 40 as a whole. This is because the strength of the horizontal magnetic field applied to the is increased.
  • the magnetic sensor 3 according to the present embodiment includes a plurality of first unit patterns in which the first magnetoresistive elements 320a and 320b are concentrically arranged, so that the isotropic detection of the horizontal magnetic field is achieved. high.
  • the second magnetoresistive elements 330a and 330b are magnetically shielded by the second magnetic member 50 and hardly detect the vertical magnetic field and the horizontal magnetic field, the second magnetoresistive elements 330a and 330b are not necessarily detected. May not be smaller than the resistance change rate of the first magnetoresistive elements 320a and 320b.
  • Embodiment 4 a magnetic sensor according to Embodiment 4 of the present invention will be described with reference to the drawings.
  • the magnetic sensor according to the fourth embodiment of the present invention is different from the magnetic sensor 3 according to the third embodiment of the present invention in that the patterns of the first and second magnetoresistive elements are mainly different from those of the magnetic sensor 3 according to the third embodiment of the present invention.
  • the description of the same configuration as that of the magnetic sensor 3 according to Embodiment 3 of the invention will not be repeated.
  • FIG. 19 is a perspective view showing a configuration of a magnetic sensor according to Embodiment 4 of the present invention.
  • FIG. 20 is a plan view of the magnetic sensor of FIG. 19 viewed from the direction of the arrow XX.
  • the magnetic sensor 4 according to Embodiment 4 of the present invention includes a circuit board 400, two first magnetic members 40 and two second magnetic members provided on the circuit board 400. A body member 50.
  • the circuit board 400 of the magnetic sensor 4 according to the fourth embodiment of the present invention is provided with four magnetoresistive elements that are electrically connected to each other by wiring to form a Wheatstone bridge type bridge circuit.
  • the four magnetoresistive elements are composed of two sets of first and second magnetoresistive elements.
  • the magnetic sensor 4 includes a first magnetoresistive element 420a and a second magnetoresistive element 430a, and a first magnetoresistive element 420b and a second magnetoresistive element 430b.
  • the first magnetoresistive elements 420 a and 420 b have a double spiral pattern when viewed from the direction orthogonal to the insulating layer 30.
  • the double spiral pattern includes two first units arranged concentrically so as to be arranged in the radial direction of the virtual circle along the circumference of the virtual circle when viewed from the direction orthogonal to the insulating layer 30. Includes patterns.
  • one spiral pattern that is the first unit pattern, the other spiral pattern that is the first unit pattern, and one spiral pattern and the other spiral pattern are double spirals.
  • An S-shaped pattern connected at the center of the pattern is included.
  • the S-shaped pattern does not include a linear extension portion and is configured only from a curved portion.
  • the circumferential direction of the double spiral pattern is different between the first magnetoresistive element 420a and the first magnetoresistive element 420b so that the directions of the S-shaped patterns are different from each other.
  • the first and second magnetoresistive elements 420a and 420b differ in the circumferential direction of the double spiral pattern by 90 ° so that the directions of the S-shaped patterns differ from each other by 90 °. ing.
  • the double spiral pattern may be wound in the opposite direction, and in this case, the central portion of the double spiral pattern is constituted by an inverted S-shaped pattern including only a curved portion. That is, one spiral pattern and the other spiral pattern are connected by an inverted S-shaped pattern.
  • the second magnetoresistive elements 430a and 430b are located outside the outer peripheral edges of the first magnetoresistive elements 420a and 420b when viewed from the direction orthogonal to the insulating layer 30.
  • the second magnetoresistive elements 430 a and 430 b have a meandering pattern when viewed from the direction orthogonal to the insulating layer 30.
  • the meander pattern of the second magnetoresistive elements 430a and 430b is formed with the same thickness as the double spiral pattern of the first magnetoresistive elements 420a and 420b. However, the thickness of the meander pattern of the second magnetoresistive elements 430a and 430b may be smaller than the thickness of the double spiral pattern of the first magnetoresistive elements 420a and 420b.
  • the first magnetic member 40 has a circular outer shape as viewed from the direction orthogonal to the insulating layer 30 and is an area inside the outer peripheral edges of the first magnetoresistive elements 420 a and 420 b. Is located. In the present embodiment, the first magnetic member 40 is located concentrically with the outer peripheral edges of the first magnetoresistive elements 420 a and 420 b when viewed from the direction orthogonal to the insulating layer 30.
  • the first magnetic member 40 is the first magnetoresistive element of the first magnetoresistive elements 420a and 420b and the second magnetoresistive elements 430a and 430b when viewed from the direction orthogonal to the insulating layer 30. Only the center part of 420a, 420b is covered. Accordingly, when viewed from the direction orthogonal to the insulating layer 30, the first magnetic member 40 is surrounded by the outer peripheral portions of the first magnetoresistive elements 420a and 420b.
  • the second magnetic member 50 covers only the second magnetoresistive elements 430a and 430b of the first magnetoresistive elements 420a and 420b and the second magnetoresistive elements 430a and 430b when viewed from the direction orthogonal to the insulating layer 30. ing.
  • the vertical magnetic field of the first magnetoresistive elements 420a and 420b is controlled by the first magnetic member 40 while suppressing the resistance change of the second magnetoresistive elements 430a and 430b due to the vertical magnetic field.
  • the detection sensitivity can be increased.
  • the magnetic sensor 4 uses the first magnetic member 40 to suppress the resistance change of the second magnetoresistive elements 430a and 430b due to the horizontal magnetic field by the second magnetic member 50.
  • the detection sensitivity of the horizontal magnetic field of the magnetoresistive elements 420a and 420b can be increased.
  • the magnetic sensor 4 according to the present embodiment includes a plurality of first unit patterns in which the first magnetoresistive elements 420a and 420b are concentrically arranged, so that the isotropic detection of the horizontal magnetic field is achieved. high.
  • the second magnetoresistive elements 430a and 430b are magnetically shielded by the second magnetic member 50 and hardly detect the vertical magnetic field and the horizontal magnetic field, the second magnetoresistive elements 430a and 430b are not necessarily detected.
  • the resistance change rate may not be smaller than the resistance change rates of the first magnetoresistive elements 420a and 420b.
  • Embodiment 5 a magnetic sensor according to a fifth embodiment of the present invention will be described with reference to the drawings.
  • the magnetic sensor according to Embodiment 5 of the present invention is mainly related to the pattern of the first magnetoresistive element and the second magnetoresistive element, and the shape of the first magnetic body member, according to Embodiment 1 of the present invention. Since it is different from the magnetic sensor 1, the description of the same configuration as the magnetic sensor 1 according to the first embodiment of the present invention will not be repeated.
  • FIG. 21 is a plan view showing the configuration of the magnetic sensor according to the fifth embodiment of the present invention.
  • FIG. 22 is a plan view showing a pattern of the first magnetoresistive element of the magnetic sensor according to the fifth embodiment of the present invention.
  • FIG. 23 is a plan view showing a pattern of the second magnetoresistive element of the magnetic sensor according to the fifth embodiment of the present invention.
  • the magnetic sensor 5 includes a circuit board 500 and two first magnetic members 45 provided on the circuit board 500.
  • the pattern of the first magnetoresistive elements 520 a and 520 b of the magnetic sensor 5 is a circle of the virtual circle C 5 when viewed from the direction orthogonal to the insulating layer 30.
  • includes four first unit patterns connected to each other are arranged side by side in the radial direction of the virtual circle C 5 along the circumference.
  • Each of the four first unit pattern is located along a virtual C-shape C 51 which portion positioned wiring 146,148,150,152 in the circumference of the virtual circle C 5 is opened.
  • Each of the four first unit patterns is a C-shaped pattern 521 arranged concentrically along the virtual C-shape C 51 so as to be aligned in the radial direction of the virtual circle C 5 .
  • the four C-shaped patterns 521 are alternately connected to each other at one end and the other end in order from the inside.
  • the C-shaped patterns 521 whose one ends are connected to each other are connected to each other by a linear pattern 522 extending in the radial direction of the virtual circle C 5 .
  • C-shaped pattern 521 and the other end are connected to each other are connected to each other by a linear pattern 523 extending in the radial direction of the virtual circle C 5.
  • the pattern 520 of the first magnetoresistive elements 520a and 520b includes two linear patterns 522 and one linear pattern 523. Thereby, the four C-shaped patterns 521 are connected in series.
  • the outer peripheral edge of the outermost C-shaped pattern 521 is the outer peripheral edge of the first magnetoresistive elements 520a and 520b.
  • the inner peripheral edge of the innermost C-shaped pattern 521 is the inner peripheral edge of the first magnetoresistive elements 520a and 520b.
  • a first magnetoresistive element 520a and the first magnetoresistive element 520b, the orientation of the virtual C-shaped C 51 are different in the circumferential direction of the orientation are different from each other. That is, the first magnetoresistive element 520a and the first magnetoresistive element 520b are different in the circumferential direction of the pattern 520 so that the directions of the C-shaped pattern 521 are different from each other.
  • the first magnetoresistive element 520a and the first magnetoresistive element 520b are different in the circumferential direction of the pattern 520 by 90 ° so that the directions of the C-shaped pattern 521 are different from each other by 90 °. .
  • the second magnetoresistance element 530a, 530b when viewed from a direction perpendicular to the insulating layer 30, situated in the center of the virtual circle C 5, first magnetoresistive element 520a, the 520b being surrounded. That is, the second magnetoresistive elements 530a and 530b are located inside the inner peripheral edges of the first magnetoresistive elements 520a and 520b when viewed from the direction orthogonal to the insulating layer 30.
  • Second magnetoresistance element 530a is connected to the wiring 146, 148 led from the center of the virtual circle C 5 to the outside of the virtual circle C 5.
  • Second magnetoresistance element 530b is connected to the wiring 150, 152 led from the center of the virtual circle C 5 to the outside of the virtual circle C 5.
  • the second magnetoresistive elements 530 a and 530 b have a double spiral pattern 530 when viewed from the direction orthogonal to the insulating layer 30.
  • the double spiral pattern 530 includes one spiral pattern 531 which is one of the two second unit patterns, and the other spiral pattern 532 which is the other one of the two second unit patterns.
  • an inverted S-shaped pattern 533 that connects one spiral pattern 531 and the other spiral pattern 532 at the center of the double spiral pattern 530 is included.
  • the inverted S-shaped pattern 533 is composed of a plurality of linear extending portions having a length shorter than 10 ⁇ m.
  • the double spiral pattern 530 is formed with the same thickness as the pattern 520. Accordingly, each of the spiral pattern 531 and the spiral pattern 532 has the same thickness as each of the four C-shaped patterns 521. However, the thickness of the double spiral pattern 530 may be smaller than the thickness of the pattern 520.
  • the double spiral pattern 530 has a substantially point-symmetric shape with respect to the center of the virtual circle C 5 . That is, the double spiral pattern 530 has a shape that is approximately 180 ° rotationally symmetric with respect to the center of the virtual circle C 5 .
  • the second magnetoresistive element 530a and the second magnetoresistive element 530b are different in the circumferential direction of the double spiral pattern 530 so that the directions of the inverted S-shaped pattern 533 are different from each other. ing.
  • the second magnetoresistive element 530a and the second magnetoresistive element 530b have the circumferential direction of the double spiral pattern 530 such that the directions of the inverted S-shaped patterns 533 are different from each other by 90 °. It is 90 ° different.
  • the first magnetoresistive elements 520a and 520b have a C-shaped pattern 521.
  • the C-shaped pattern 521 is composed of approximately 7 sides out of 8 sides constituting a substantially regular octagon.
  • the 1st magnetoresistive element 520a, 520b is comprised by most sides among the sides which comprise a polygon, the anisotropy of a magnetic field detection is reduced.
  • the circumferential direction of the pattern 520 is different so that the directions of the C-shaped patterns 521 of the first magnetoresistive element 520a and the first magnetoresistive element 520b are different from each other. As a result, the isotropy of magnetic field detection is increased.
  • the second magnetoresistive elements 530a and 530b have a double spiral pattern 530.
  • the double spiral pattern 530 is mainly configured by winding sides forming a substantially regular octagon.
  • the circumferential direction of the double spiral pattern 530 so that the directions of the inverted S-shaped patterns 533 of the second magnetoresistive element 530a and the second magnetoresistive element 530b are different from each other. Is different, the isotropy of the magnetoresistive effect is increased.
  • the magnetic sensor 5 since the second magnetoresistive elements 530a and 530b are arranged inside the first magnetoresistive elements 520a and 520b, the magnetic sensor 5 can be reduced in size. Also in the magnetic sensor 5, it is not necessary to three-dimensionally route the wiring connecting the first magnetoresistive elements 520 a, 520 b and the second magnetoresistive elements 530 a, 530 b, so that the circuit board 500 is manufactured by a simple manufacturing process. Is possible.
  • the first magnetic member 45 has a regular octagonal outer shape as viewed from the direction orthogonal to the insulating layer 30 and is inside the outer peripheral edges of the first magnetoresistive elements 520a and 520b. Located in the area.
  • the outer peripheral edges of the first magnetoresistive elements 520a and 520b are connected to the region inside the outer peripheral edges of the first magnetoresistive elements 520a and 520b by a virtual straight line. It is an area that is surrounded. It is preferable that more than half of the first magnetic body member 45 overlaps the region inside the outer peripheral edge of the first magnetoresistive elements 520a and 520b, and 2/3 or more of the first magnetic body member 45 overlaps. It is more preferable.
  • the first magnetic member 45 is located in a region inside the inner periphery of the first magnetoresistive elements 520a and 520b when viewed from the direction orthogonal to the insulating layer 30.
  • the first magnetic body member 45 may be located on the inner periphery of the first magnetoresistive elements 520a and 520b and in a region including the region inside the inner periphery as viewed from the direction orthogonal to the insulating layer 30.
  • the inner peripheral edge of the first magnetoresistive elements 520a and 520b is connected to the region inside the inner peripheral edge of the first magnetoresistive elements 520a and 520b by a virtual straight line when viewed from the direction orthogonal to the insulating layer 30. It is an area that is surrounded. It is preferable that more than half of the first magnetic body member 45 overlaps the area inside the inner peripheral edge of the first magnetoresistive elements 520a and 520b, and 2/3 or more of the first magnetic body member 45 overlaps. It is more preferable.
  • the first magnetic member 45 is located concentrically with the outer peripheral edges of the first magnetoresistive elements 520a and 520b when viewed from the direction orthogonal to the insulating layer 30.
  • the first magnetic member 45 is the second magnetoresistive element of the first magnetoresistive elements 520a and 520b and the second magnetoresistive elements 530a and 530b when viewed from the direction orthogonal to the insulating layer 30. Only 530a and 530b are covered. Therefore, when viewed from the direction orthogonal to the insulating layer 30, the outer periphery of the first magnetic member 40 is surrounded by the first magnetoresistive elements 120a and 120b at least 1/2 of the entire circumference.
  • the vertical magnetic field and the horizontal magnetic field can be detected with high sensitivity.
  • the magnetic sensor 5 according to the fifth embodiment of the present invention includes a plurality of first unit patterns in which the first magnetoresistive elements 520a and 520b are arranged in a polygonal shape, thereby providing isotropic detection of the horizontal magnetic field. high.
  • each of the first magnetoresistive elements 520a and 520b, the second magnetoresistive elements 530a and 530b, and the first magnetic member 45 has a shape along a concentric regular octagon.
  • these shapes are not limited to the above, and may be any shape along a concentric polygon. As the number of corners of the polygon increases, the isotropic property of detecting the horizontal magnetic field of the first magnetoresistive elements 520a and 520b can be increased.
  • the second magnetoresistive elements 530a and 530b are magnetically shielded by the first magnetic member 45 and hardly detect the vertical magnetic field and the horizontal magnetic field, the second magnetoresistive elements 530a and 530b are not necessarily detected. Is not necessarily smaller than the resistance change rate of the first magnetoresistive elements 520a and 520b.
  • Second magnetic member 100, 200, 300, 400, 500 Circuit board, 110 Semiconductor substrate, 120, 230, 330, 520 pattern, 120a, 120b, 320a, 320b, 420a, 420b, 520a, 520b First magnetoresistive element, 121, 521 C-shaped pattern, 122, 123, 231 , 232, 233 Semicircular arc pattern, 130, 320, 530 Double spiral pattern, 130a, 130b, 230a, 230b, 330a, 330b, 430a, 430b, 530a, 530b Second magnetoresistive element, 131, 132, 321 , 322, 531, 532 spiral pattern, 133 reverse S-shaped pattern, 140 , 141 Midpoint, 145, 146, 147, 148, 149, 150, 151, 152 Wiring, 160 Differential Amp

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)

Abstract

La présente invention concerne un capteur magnétique pourvu de : premiers éléments de résistance magnétique (120a, 120b) ; deuxièmes éléments de résistance magnétique (130a, 130b) ; une couche d'isolation (30) ; et, parmi un premier élément magnétique (40) et un deuxième élément magnétique (50) situé sur la couche isolante (30), au moins le premier élément magnétique (40). Les premiers éléments de résistance magnétique (120a, 120b) comportent, parmi un bord périphérique externe et un bord périphérique interne, au moins le bord périphérique externe. Le premier élément magnétique (40), observé depuis une direction orthogonale à la couche d'isolation (30), est situé en position médiane par rapport au bord périphérique externe des premiers éléments de résistance magnétique (120a, 120b). Les deuxièmes éléments de résistance magnétique (130a, 130b), observés depuis une direction orthogonale à la couche d'isolation (30), sont situés en position médiane par rapport aux premiers éléments de résistance magnétique (120a, 120b) et recouverts par le premier élément magnétique (40), ou sont situés en position latérale par rapport aux premiers éléments de résistance magnétique (120a, 120b) et recouverts par le deuxième élément magnétique (50).
PCT/JP2017/020202 2016-05-31 2017-05-31 Capteur magnétique WO2017209169A1 (fr)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019035269A1 (fr) * 2017-08-16 2019-02-21 株式会社村田製作所 Capteur magnétique
WO2019111782A1 (fr) * 2017-12-04 2019-06-13 株式会社村田製作所 Capteur magnétique
WO2019240005A1 (fr) * 2018-06-11 2019-12-19 株式会社東海理化電機製作所 Dispositif capteur magnétique

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Publication number Priority date Publication date Assignee Title
JPH09102638A (ja) * 1995-10-06 1997-04-15 Sony Corp 磁気センサ
US20040137275A1 (en) * 2002-11-15 2004-07-15 Nve Corporation Two-axis magnetic field sensor
JP2010066262A (ja) * 2008-09-08 2010-03-25 Robert Bosch Gmbh 磁界の空間成分を測定する磁界センサ装置
JP2013044641A (ja) * 2011-08-24 2013-03-04 Murata Mfg Co Ltd 磁気センサ
WO2015035912A1 (fr) * 2013-09-10 2015-03-19 江苏多维科技有限公司 Capteur monopuce linéaire à magnétorésistance dans le sens de l'axe z
WO2016013345A1 (fr) * 2014-07-24 2016-01-28 株式会社村田製作所 Capteur magnétique

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09102638A (ja) * 1995-10-06 1997-04-15 Sony Corp 磁気センサ
US20040137275A1 (en) * 2002-11-15 2004-07-15 Nve Corporation Two-axis magnetic field sensor
JP2010066262A (ja) * 2008-09-08 2010-03-25 Robert Bosch Gmbh 磁界の空間成分を測定する磁界センサ装置
JP2013044641A (ja) * 2011-08-24 2013-03-04 Murata Mfg Co Ltd 磁気センサ
WO2015035912A1 (fr) * 2013-09-10 2015-03-19 江苏多维科技有限公司 Capteur monopuce linéaire à magnétorésistance dans le sens de l'axe z
WO2016013345A1 (fr) * 2014-07-24 2016-01-28 株式会社村田製作所 Capteur magnétique

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019035269A1 (fr) * 2017-08-16 2019-02-21 株式会社村田製作所 Capteur magnétique
WO2019111782A1 (fr) * 2017-12-04 2019-06-13 株式会社村田製作所 Capteur magnétique
WO2019240005A1 (fr) * 2018-06-11 2019-12-19 株式会社東海理化電機製作所 Dispositif capteur magnétique

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