WO2017199787A1 - Capteur magnétique - Google Patents

Capteur magnétique Download PDF

Info

Publication number
WO2017199787A1
WO2017199787A1 PCT/JP2017/017474 JP2017017474W WO2017199787A1 WO 2017199787 A1 WO2017199787 A1 WO 2017199787A1 JP 2017017474 W JP2017017474 W JP 2017017474W WO 2017199787 A1 WO2017199787 A1 WO 2017199787A1
Authority
WO
WIPO (PCT)
Prior art keywords
magnetic sensor
magnetic
magnetoresistive element
magnetoresistive elements
magnetic field
Prior art date
Application number
PCT/JP2017/017474
Other languages
English (en)
Japanese (ja)
Inventor
弘晃 難波
Original Assignee
株式会社村田製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社村田製作所 filed Critical 株式会社村田製作所
Publication of WO2017199787A1 publication Critical patent/WO2017199787A1/fr

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Definitions

  • the present invention relates to a magnetic sensor.
  • Patent Document 1 Japanese Patent Laid-Open No. 11-274598
  • Patent Document 2 Japanese Translation of PCT International Publication No. 2016-502098
  • Patent Document 3 Japanese Patent Application Laid-Open No. 2004-354182. Gazette
  • magnetic signals in the Z-axis direction are collected by a magnetic guiding unit installed in a groove provided on the substrate and on the substrate surface, and an induction installed on the substrate surface.
  • a magnetic field in the Z-axis direction is detected by guiding a magnetic signal in the Z-axis direction to the unit and guiding it in the horizontal direction.
  • the first thin film magnetic sensor formed on the inclined surface so that the sensitivity axis is not parallel to the surface of the insulating substrate, and the sensitivity axis is the surface of the insulating substrate.
  • a second thin film magnetic sensor formed on the flat portion so as not to be perpendicular to.
  • the first thin film magnetic sensor detects a Z-axis direction component of the external magnetic field.
  • the second thin film magnetic sensor detects an X-axis direction component and a Y-axis direction component of the external magnetic field.
  • a magnetoresistive element that detects a magnetic field of an X-axis direction component a magnetoresistive element that detects a magnetic field of a Y-axis direction component, and a magnetoresistance that detects a magnetic field of a Z-axis direction component
  • An element is required, and a three-dimensional magnetic field is detected by three magnetoresistive elements. Therefore, the configuration of the magnetic sensor described in Patent Document 1 is complicated compared to a conventional magnetic sensor that detects a magnetic field in a two-dimensional direction.
  • the magnetic sensor described in Patent Document 3 requires a magnetoresistive element that detects a magnetic field of a Z-axis direction component, and a magnetoresistive element that detects a magnetic field of an X-axis direction component and a Y-axis direction component. A magnetic field in the dimensional direction is detected by two magnetoresistive elements. Therefore, the configuration of the magnetic sensor described in Patent Document 3 is more complicated than a conventional magnetic sensor that detects a magnetic field in a two-dimensional direction.
  • the present invention has been made in view of the above problems, and an object thereof is to provide a magnetic sensor having a simple configuration by detecting a magnetic field in a three-dimensional direction with a single magnetoresistive element.
  • a magnetic sensor has an upper surface, a substrate provided with a groove having an inner surface connected to the upper surface, a first magnetoresistive element provided on the substrate and connected to each other to form a bridge circuit, and A second magnetoresistive element.
  • the first magnetoresistive element is composed of a magnetic film that continuously covers a part of the upper surface and the inner surface.
  • the second magnetoresistive element is composed of a magnetic film that covers the other part of the upper surface.
  • the inner surface includes a side surface perpendicular to a virtual plane including the upper surface.
  • the inner surface includes a bottom surface parallel to a virtual plane including the upper surface.
  • the said inner surface contains the curved bottom face.
  • the magnetic film constituting the first magnetoresistive element and the magnetic film constituting the second magnetoresistive element are made of the same material.
  • the first magnetoresistive element is provided in an annular shape or a spiral shape when viewed from a direction orthogonal to the upper surface.
  • the second magnetoresistive element is provided in a meander shape when viewed from a direction orthogonal to the upper surface.
  • the magnetic sensor includes two first magnetoresistive elements and two second magnetoresistive elements. Two first magnetoresistive elements and two second magnetoresistive elements are connected to each other to form a full bridge circuit.
  • the configuration of the magnetic sensor for detecting the magnetic field in the three-dimensional direction can be simplified.
  • FIG. 1 is a plan view showing the configuration of the magnetic sensor according to Embodiment 1 of the present invention.
  • FIG. 2 is an enlarged perspective view showing a II part of the magnetic sensor of FIG.
  • FIG. 3 is an enlarged perspective view showing a part III of the magnetic sensor in FIG. 1 to 3, the width direction of the substrate 110 to be described later is shown as the X-axis direction, the depth direction of the substrate 110 is shown as the Y-axis direction, and the thickness direction of the substrate 110 is shown as the Z-axis direction.
  • a magnetic sensor 100 As shown in FIGS. 1 to 3, a magnetic sensor 100 according to Embodiment 1 of the present invention includes a substrate 110 and a first magnetoresistive element R1, a second magnetoresistive element R2, and a first magnetic sensor provided on the substrate 110. A resistance element R3 and a second magnetoresistance element R4 are provided. In the present embodiment, the magnetic sensor 100 includes two first magnetoresistive elements and two second magnetoresistive elements.
  • the substrate 110 has an upper surface 111.
  • the substrate 110 has a rectangular outer shape when viewed from a direction orthogonal to the upper surface 111.
  • the outer shape of the substrate 110 is not limited to a rectangle, and may be a circle or an ellipse.
  • the substrate 110 is made of Si, for example.
  • the substrate 110 is provided with a groove 112 having an inner surface connected to the upper surface 111.
  • the groove 112 is formed in a shape corresponding to the pattern shape of first magnetoresistive elements R1 and R3 described later.
  • the inner surface of the groove portion 112 includes a side surface 113 perpendicular to a virtual plane including the upper surface 111 and a bottom surface 114 parallel to the virtual plane including the upper surface 111.
  • each of the first magnetoresistive elements R1, R3 and the second magnetoresistive elements R2, R4 is an AMR (Anisotropic Magneto Resistance) element.
  • each of the first magnetoresistive elements R1, R3 and the second magnetoresistive elements R2, R4 includes GMR (Giant Magneto Resistance), TMR (Tunnel Magneto Resistance), BMR (Ballistic Magneto Resistance), CMR (Colossal Magneto Resistance). It may be a magnetoresistive element.
  • each of the first magnetoresistive elements R1 and R3 and the second magnetoresistive elements R2 and R4 is magnetically provided in a meander-like pattern shape when viewed from the direction orthogonal to the upper surface 111 of the substrate 110.
  • the body membrane 120 is configured.
  • the magnetic film 120 constituting the first magnetoresistive elements R1 and R3 and the magnetic film 120 constituting the second magnetoresistive elements R2 and R4 are made of the same material.
  • the magnetic film 120 constituting the first magnetoresistive elements R1 and R3 includes a long portion extending in the X-axis direction and a short portion extending in the Y-axis direction, which are connected to each other.
  • the magnetic film 120 constituting the second magnetoresistive elements R2 and R4 includes a long part extending in the Y-axis direction and a short part extending in the X-axis direction, which are connected to each other.
  • the magnetic film 120 constituting the first magnetoresistive elements R1, R3 continuously covers a part of the upper surface 111 of the substrate 110 and the inner surface of the groove 112.
  • the magnetic film 120 constituting the second magnetoresistive elements R2 and R4 covers another part of the upper surface 111 of the substrate 110.
  • the magnetic film 120 is a thin film of a ferromagnetic material such as permalloy.
  • the magnetization direction of the magnetic film 120 is determined by the shape anisotropy of the magnetic film 120.
  • a barber pole electrode or a bias magnet (not shown) is provided in order to bias the current to flow through the magnetic film 120 in a direction that forms a predetermined angle with respect to the magnetization direction of the magnetic film 120.
  • the portions provided on the top surface 111 and the bottom surface 114 are magnetic field components in the Y-axis direction orthogonal to the longitudinal portion extending in the X-axis direction. When is applied, the electric resistance value becomes the smallest.
  • a portion provided on the side surface 113 is applied with a magnetic field component in the Z-axis direction orthogonal to the longitudinal portion extending in the X-axis direction. The electric resistance value is the smallest.
  • the magnetic film 120 constituting the second magnetoresistive elements R2 and R4 has the smallest electric resistance value when a magnetic field component in the X-axis direction orthogonal to the longitudinal portion extending in the Y-axis direction is applied.
  • the magnetic sensor 100 further includes a first midpoint Vout1, a second midpoint Vout2, a power supply terminal Vcc, and a ground terminal Gnd provided on the substrate 110.
  • Each of the first magnetoresistive element R1 and the second magnetoresistive element R2 is connected to the first middle point Vout1.
  • Each of the first magnetoresistive element R3 and the second magnetoresistive element R4 is connected to the second middle point Vout2.
  • Each of the second magnetoresistive element R2 and the first magnetoresistive element R3 is connected to a power supply terminal Vcc to which a current is input.
  • Each of the first magnetoresistive element R1 and the second magnetoresistive element R4 is connected to the ground terminal Gnd.
  • FIG. 4 is a perspective view showing a state in which an external magnetic field is applied to the first magnetoresistive element of the magnetic sensor according to the first embodiment of the present invention.
  • FIG. 5 is a perspective view showing a state in which an external magnetic field is applied to the second magnetoresistive element of the magnetic sensor according to Embodiment 1 of the present invention.
  • the current I input from the power supply terminal Vcc flows through the magnetic film 120 constituting each of the first magnetoresistive elements R1 and R3 and the second magnetoresistive elements R2 and R4.
  • the external magnetic field includes a magnetic field component Bp in the X-axis direction and the Y-axis direction and a magnetic field component Bz in the Z-axis direction.
  • the magnetic field component Bp travels in a direction substantially perpendicular to the longitudinal portion of the magnetic film 120 constituting the first magnetoresistive elements R1 and R3, and the magnetic field component Bp of the magnetic film 120 constituting the second magnetoresistive elements R2 and R4. It proceeds in a direction substantially parallel to the longitudinal portion.
  • the magnetic film 120 constituting the first magnetoresistive elements R1 and R3 when an external magnetic field is applied, in the magnetic film 120 constituting the first magnetoresistive elements R1 and R3, the electrical resistance values of the portions provided on the top surface 111 and the bottom surface 114 are greatly reduced. On the other hand, the electric resistance value of the magnetic film 120 constituting the second magnetoresistive elements R2 and R4 hardly decreases.
  • the magnetic field component Bz travels in a direction substantially perpendicular to the longitudinal portion of the magnetic film 120 constituting the first magnetoresistive elements R1 and R3. Therefore, when an external magnetic field is applied, the electric resistance value of the portion provided on the side surface 113 in the magnetic film 120 constituting the first magnetoresistive elements R1 and R3 is greatly reduced. On the other hand, the second magnetoresistive elements R2 and R4 do not detect the magnetic field component Bz in the Z-axis direction.
  • the first magnetoresistive elements R1 and R3 can detect both the magnetic field component Bp in the X-axis direction and the Y-axis direction and the magnetic field component Bz in the Z-axis direction. That is, a magnetic field in a three-dimensional direction can be detected by one first magnetoresistive element. Note that, regardless of the incident direction of the external magnetic field, the electric resistance values of the first magnetoresistive elements R1 and R3 fluctuate, and the current I is the electric resistance value of the first magnetoresistive elements R1 and R3.
  • the first magnetoresistive elements R1 and R3 have sensitivity in the three-dimensional direction because they flow preferentially through the lowered portion.
  • FIG. 6 is an equivalent circuit diagram of the magnetic sensor according to the first embodiment of the present invention.
  • the first magnetoresistive element R1 includes a variable resistor R1P that detects magnetic field components in the X-axis direction and the Y-axis direction, and a Z-axis. And a variable resistance portion R1V that detects a magnetic field component in the direction.
  • the variable resistor portion R1P and the variable resistor portion R1V are connected in parallel between the first middle point Vout1 and the ground terminal Gnd.
  • the first magnetoresistive element R3 includes a variable resistor R3P that detects magnetic field components in the X-axis direction and the Y-axis direction, and a variable resistor R3V that detects magnetic field components in the Z-axis direction.
  • the variable resistor portion R3P and the variable resistor portion R3V are connected in parallel between the power supply terminal Vcc and the second middle point Vout2.
  • FIG. 7 is a partial cross-sectional view showing a state in which a photoresist is formed on a substrate.
  • a photoresist 10 is formed on the upper surface 111 of the substrate 110.
  • the photoresist 10 is provided with an opening at a portion corresponding to the position where the groove 112 is formed.
  • the photoresist 10 may be either a negative type or a positive type.
  • a hard mask made of, for example, silicon nitride, silicon carbonitride, or metal may be formed on the upper surface 111 of the substrate 110.
  • FIG. 8 is a partial cross-sectional view showing a state in which a groove is formed in the substrate by etching.
  • the photoresist 10 is removed, so that a groove 112 is provided in the substrate 110 as shown in FIG. As a result, the side surface 113 and the bottom surface 114 which are the inner surfaces of the groove 112 are exposed.
  • the etching method may be any method that allows anisotropic etching, and may be either dry etching or wet etching.
  • the method for forming the groove 112 is not limited to etching, and cutting or laser scribing may be used.
  • FIG. 9 is a partial cross-sectional view showing a state where a magnetic film is formed on a substrate.
  • the magnetic film 120 is formed on the substrate 110 provided with the groove 112.
  • a copper wiring technique used in manufacturing LSI (large scale integration) or a TSV (through silicon via) technique is applied.
  • Can do As a film forming method, sputtering, vapor deposition, or the like can be used.
  • FIG. 10 is a partial cross-sectional view showing a state in which a photoresist is formed on a substrate on which a magnetic film is formed.
  • a photoresist 11 is provided so as to correspond to each pattern shape of the first magnetoresistive element and the second magnetoresistive element.
  • the groove portion 112 is covered with the photoresist 11.
  • the photoresist 11 may be either a negative type or a positive type.
  • FIG. 11 is a partial cross-sectional view showing a state where an unnecessary magnetic film is removed by etching. As shown in FIG. 11, by patterning the magnetic film 120 and removing the photoresist 11, the first magnetoresistive elements R1, R3 and the second magnetoresistive elements R2, R4 are formed.
  • the magnetic sensor 100 according to Embodiment 1 of the present invention can detect a magnetic field in a three-dimensional direction by the first magnetoresistive elements R1 and R3, and the first magnetoresistive elements R1 and R3 and the second magnetoresistive elements.
  • the pattern shape of each of the elements R2 and R4 is the same as the pattern shape of a magnetoresistive element that detects a magnetic field in a conventional two-dimensional direction, and has a simple configuration.
  • all the resistors constituting the bridge circuit are magnetoresistive elements. For this reason, all the resistors can be formed of the same material. Furthermore, all resistors can be manufactured in the same manufacturing process.
  • the detection sensitivity of the magnetic field component in the Z-axis direction can be changed by appropriately adjusting the width and depth of the groove 112. Moreover, the detection sensitivity of the magnetic field component in the Z-axis direction can be changed by appropriately adjusting the shape of the inner surface of the groove 112.
  • FIG. 12 is a partial cross-sectional view showing a configuration of a first magnetoresistive element according to a first modification of the magnetic sensor according to the first embodiment of the present invention.
  • FIG. 13 is a partial cross-sectional view showing the configuration of the first magnetoresistance element according to the second modification example of the magnetic sensor according to the first embodiment of the present invention.
  • the inner surface of the groove 112 a has a side surface 113 perpendicular to a virtual plane including the upper surface 111 and a virtual surface including the upper surface 111.
  • a bottom surface 114 parallel to the plane and an inclined surface 115 extending in a direction intersecting with a virtual plane including the upper surface 111 and connecting the side surface 113 and the bottom surface 114 are formed.
  • the inner surface of the groove 112b includes a side surface 113 perpendicular to a virtual plane including the upper surface 111, and a curved bottom surface 116. It is composed of
  • the magnetic sensor 100 includes a Wheatstone bridge type full-bridge circuit, but is not limited thereto, and may include a half-bridge circuit.
  • FIG. 14 is an equivalent circuit diagram of a magnetic sensor according to a third modification of the magnetic sensor according to Embodiment 1 of the present invention.
  • the first magnetoresistive element R1 and the first magnetoresistive element R1 are connected between the power supply terminal Vcc and the ground terminal Gnd.
  • Two magnetoresistive elements R2 are connected in series.
  • a first middle point Vout1 is connected between the first magnetoresistive element R1 and the second magnetoresistive element R2.
  • An external magnetic field can be detected based on a change in potential difference between the first middle point Vout1 and the ground terminal Gnd.
  • Embodiment 2 a magnetic sensor according to Embodiment 2 of the present invention will be described with reference to the drawings.
  • the magnetic sensor according to the second embodiment of the present invention is different from the magnetic sensor 100 according to the first embodiment of the present invention only in the pattern shape of the first magnetoresistive element, and therefore the magnetic sensor 100 according to the first embodiment of the present invention.
  • the description of the same configuration as in FIG. 1 is different from the magnetic sensor 100 according to the first embodiment of the present invention only in the pattern shape of the first magnetoresistive element, and therefore the magnetic sensor 100 according to the first embodiment of the present invention.
  • FIG. 15 is a plan view showing the pattern shape of the first magnetoresistive element of the magnetic sensor according to the second embodiment of the present invention.
  • the first magnetoresistive elements R ⁇ b> 1 and R ⁇ b> 3 are configured by a magnetic film 120 provided in a double spiral pattern when viewed from a direction orthogonal to the upper surface 111 of the substrate 110.
  • the double spiral pattern includes one spiral pattern, the other spiral pattern, and an S-shape that connects one spiral pattern and the other spiral pattern at the center of the double spiral pattern. Includes patterns.
  • the double spiral pattern may be wound in the opposite direction, and in this case, the central portion of the double spiral pattern is constituted by an inverted S-shaped pattern.
  • the double spiral pattern is mainly configured by winding a substantially arc-shaped curved portion. Since the arc is an approximate shape when the number of corners of the polygon becomes infinitely large, the direction of the current flowing through the double spiral pattern extends over almost all directions (360 °) in the horizontal direction. . Therefore, the first magnetoresistive elements R1 and R3 can detect the external magnetic field over substantially the entire horizontal direction (360 °). In addition, since each of the first magnetoresistive elements R1 and R3 does not include a linear extending portion, anisotropy of magnetic field detection is reduced.
  • the first magnetoresistive elements R1 and R3 may be configured by the magnetic film 120 provided in an annular pattern shape when viewed from the direction orthogonal to the upper surface 111 of the substrate 110.
  • the magnetic film 120 is provided over the entire circumference in the annular circumferential direction.
  • the annular shape is not limited to a circle but may be an ellipse.
  • the groove 112 may not be formed over the entire pattern shape of the first magnetoresistive elements R1 and R3. However, the groove 112 may be provided over the entire circumference in the circumferential direction of the pattern shape. This is preferable from the viewpoint of reducing detection anisotropy.
  • Embodiment 3 a magnetic sensor according to Embodiment 3 of the present invention will be described with reference to the drawings.
  • the magnetic sensor according to the third embodiment of the present invention differs from the magnetic sensor 100 according to the first embodiment of the present invention only in the pattern shape of the first magnetoresistive element and the second magnetoresistive element. The description of the same configuration as that of the magnetic sensor 100 according to 1 will not be repeated.
  • FIG. 16 is a plan view showing the configuration of the magnetic sensor according to the third embodiment of the present invention.
  • the first magnetoresistive elements R ⁇ b> 1 and R ⁇ b> 3 are double spiral patterns when viewed from the direction orthogonal to the upper surface 111 of the substrate 110.
  • the magnetic film 120 is provided in a shape.
  • the second magnetoresistive elements R2 and R4 are configured by a magnetic film 120 provided in a meandering pattern shape when viewed from a direction orthogonal to the upper surface 111 of the substrate 110.
  • the longitudinal portion of the magnetic film 120 constituting the second magnetoresistive elements R2 and R4 is formed in a zigzag manner.
  • the length of the linearly extending portion of the magnetic film 120 constituting the second magnetoresistive elements R2 and R4 is 10 ⁇ m or less.
  • the resistance change rate of the magnetoresistive element decreases as the length of the linearly extending portion of the magnetic film 120 becomes shorter.
  • the resistance change rate of the second magnetoresistive elements R2 and R4 in which the length of the linearly extending portion of the magnetic film 120 is 10 ⁇ m is less than 0.5%. Therefore, the second magnetoresistive elements R2 and R4 hardly change in electric resistance value even when an external magnetic field is applied.
  • the resistance change rates of the second magnetoresistive elements R2 and R4 are smaller than the resistance change rates of the first magnetoresistive elements R1 and R3. That is, the first magnetoresistive elements R1 and R3 are so-called magnetosensitive resistors whose electric resistance values change when an external magnetic field is applied.
  • the second magnetoresistive elements R2 and R4 are fixed resistors whose electric resistance values hardly change even when an external magnetic field is applied.
  • the degree of freedom of arrangement of the magnetic sensor 300 with respect to an external magnetic field can be increased.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)

Abstract

Le capteur magnétique de l'invention comporte : un substrat (110), qui comporte une surface supérieure (111) et est pourvu d'une partie tranchée (112) comportant une surface interne reliée à la surface supérieure (111); et un premier élément magnétorésistif et un second élément magnétorésistif, qui sont placés sur le substrat (110) et constituent un circuit en pont en étant reliés l'un à l'autre. Le premier élément magnétorésistif est constitué d'un film magnétique (120) recouvrant de façon continue une partie de la surface supérieure (111) et de la surface interne. Le second élément magnétorésistif est constitué du film magnétique (120) recouvrant une autre partie de la surface supérieure (111).
PCT/JP2017/017474 2016-05-19 2017-05-09 Capteur magnétique WO2017199787A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016100517 2016-05-19
JP2016-100517 2016-05-19

Publications (1)

Publication Number Publication Date
WO2017199787A1 true WO2017199787A1 (fr) 2017-11-23

Family

ID=60325781

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2017/017474 WO2017199787A1 (fr) 2016-05-19 2017-05-09 Capteur magnétique

Country Status (1)

Country Link
WO (1) WO2017199787A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021141281A (ja) * 2020-03-09 2021-09-16 日立金属株式会社 Ｇｍｒ素子および検知装置
US11953567B2 (en) 2020-09-08 2024-04-09 Analog Devices International Unlimited Company Magnetic multi-turn sensor and method of manufacture

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050270020A1 (en) * 2004-06-03 2005-12-08 Honeywell International Inc. Integrated three-dimensional magnetic sensing device and method to fabricate an integrated three-dimensional magnetic sensing device
US20060171081A1 (en) * 2005-01-21 2006-08-03 Marcus Brcuer Magnetic sensor with tilted magnetoresistive structures
JP2009222650A (ja) * 2008-03-18 2009-10-01 Ricoh Co Ltd 磁気センサーおよび携帯情報端末装置
US20100327864A1 (en) * 2009-06-30 2010-12-30 Stmicroelectronics S.R.L. Magnetoresistive sensor and manufacturing method thereof
US20140159717A1 (en) * 2012-12-12 2014-06-12 Stmicroelectronics S.R.L. Magnetoresistive sensor integrated in a chip for detecting magnetic fields perpendicular to the chip and manufacturing process thereof
WO2014156751A1 (fr) * 2013-03-26 2014-10-02 株式会社村田製作所 Capteur magnétique
CN104681713A (zh) * 2014-12-25 2015-06-03 上海华虹宏力半导体制造有限公司 各向异性磁阻及提升各向异性磁阻z轴敏感度的制备方法
WO2015182365A1 (fr) * 2014-05-30 2015-12-03 株式会社村田製作所 Capteur magnétique
US20150349243A1 (en) * 2014-06-03 2015-12-03 Semiconductor Manufacturing International (Shanghai) Corporation Magnetoresistive sensor, related manufacturing method, and related electronic device
CN105261699A (zh) * 2015-09-08 2016-01-20 杭州士兰集成电路有限公司 单芯片三轴各向异性磁阻传感器制作方法
WO2016013345A1 (fr) * 2014-07-24 2016-01-28 株式会社村田製作所 Capteur magnétique
CN105304811A (zh) * 2015-11-19 2016-02-03 杭州士兰微电子股份有限公司 具有斜面的衬底结构、磁阻传感器及其制作方法

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050270020A1 (en) * 2004-06-03 2005-12-08 Honeywell International Inc. Integrated three-dimensional magnetic sensing device and method to fabricate an integrated three-dimensional magnetic sensing device
US20060171081A1 (en) * 2005-01-21 2006-08-03 Marcus Brcuer Magnetic sensor with tilted magnetoresistive structures
JP2009222650A (ja) * 2008-03-18 2009-10-01 Ricoh Co Ltd 磁気センサーおよび携帯情報端末装置
US20100327864A1 (en) * 2009-06-30 2010-12-30 Stmicroelectronics S.R.L. Magnetoresistive sensor and manufacturing method thereof
US20140159717A1 (en) * 2012-12-12 2014-06-12 Stmicroelectronics S.R.L. Magnetoresistive sensor integrated in a chip for detecting magnetic fields perpendicular to the chip and manufacturing process thereof
WO2014156751A1 (fr) * 2013-03-26 2014-10-02 株式会社村田製作所 Capteur magnétique
WO2015182365A1 (fr) * 2014-05-30 2015-12-03 株式会社村田製作所 Capteur magnétique
US20150349243A1 (en) * 2014-06-03 2015-12-03 Semiconductor Manufacturing International (Shanghai) Corporation Magnetoresistive sensor, related manufacturing method, and related electronic device
WO2016013345A1 (fr) * 2014-07-24 2016-01-28 株式会社村田製作所 Capteur magnétique
CN104681713A (zh) * 2014-12-25 2015-06-03 上海华虹宏力半导体制造有限公司 各向异性磁阻及提升各向异性磁阻z轴敏感度的制备方法
CN105261699A (zh) * 2015-09-08 2016-01-20 杭州士兰集成电路有限公司 单芯片三轴各向异性磁阻传感器制作方法
CN105304811A (zh) * 2015-11-19 2016-02-03 杭州士兰微电子股份有限公司 具有斜面的衬底结构、磁阻传感器及其制作方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021141281A (ja) * 2020-03-09 2021-09-16 日立金属株式会社 Ｇｍｒ素子および検知装置
JP7404939B2 (ja) 2020-03-09 2023-12-26 株式会社プロテリアル Ｇｍｒ素子および検知装置
US11953567B2 (en) 2020-09-08 2024-04-09 Analog Devices International Unlimited Company Magnetic multi-turn sensor and method of manufacture

Similar Documents

Publication Publication Date Title
JP5152495B2 (ja) 磁気センサーおよび携帯情報端末装置
JP5144803B2 (ja) 回転検出装置
JP5271448B2 (ja) 磁気式位置検出装置
JP6597370B2 (ja) 磁気センサ
JP5532166B1 (ja) 磁気センサおよび磁気センサシステム
JP5843079B2 (ja) 磁気センサおよび磁気センサシステム
KR20080031964A (ko) 위치 센서용 비대칭 ａｍｒ 휘트스톤 브릿지 레이아웃
WO2015182365A1 (fr) Capteur magnétique
US9678177B2 (en) Magnetic sensor device for suppressing magnetic saturation
CN104280699A (zh) 一种单芯片三轴磁场感测装置
WO2008072610A1 (fr) Détecteur magnétique et codeur magnétique utilisant le détecteur
WO2019167598A1 (fr) Capteur magnétique
JP2009300150A (ja) 磁気センサ及び磁気センサモジュール
JP2016170028A (ja) 磁気センサ
JP2015219227A (ja) 磁気センサ
JP5802565B2 (ja) 磁気センサ
WO2017199787A1 (fr) Capteur magnétique
WO2014156751A1 (fr) Capteur magnétique
WO2011074488A1 (fr) Capteur magnétique
WO2017209169A1 (fr) Capteur magnétique
JP2014089088A (ja) 磁気抵抗効果素子
CN110837066B (zh) 磁场感测装置
CN111433620B (zh) 磁传感器
JP6699638B2 (ja) 磁気センサ
JP5630247B2 (ja) 回転角センサ

Legal Events

Date Code Title Description
NENP Non-entry into the national phase

Ref country code: DE

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17799212

Country of ref document: EP

Kind code of ref document: A1

122 Ep: pct application non-entry in european phase

Ref document number: 17799212

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: JP