WO2017199787A1 - Magnetic sensor - Google Patents

Magnetic sensor Download PDF

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Publication number
WO2017199787A1
WO2017199787A1 PCT/JP2017/017474 JP2017017474W WO2017199787A1 WO 2017199787 A1 WO2017199787 A1 WO 2017199787A1 JP 2017017474 W JP2017017474 W JP 2017017474W WO 2017199787 A1 WO2017199787 A1 WO 2017199787A1
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Prior art keywords
magnetic sensor
magnetic
magnetoresistive element
magnetoresistive elements
magnetic field
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PCT/JP2017/017474
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French (fr)
Japanese (ja)
Inventor
弘晃 難波
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株式会社村田製作所
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Publication of WO2017199787A1 publication Critical patent/WO2017199787A1/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Definitions

  • the present invention relates to a magnetic sensor.
  • Patent Document 1 Japanese Patent Laid-Open No. 11-274598
  • Patent Document 2 Japanese Translation of PCT International Publication No. 2016-502098
  • Patent Document 3 Japanese Patent Application Laid-Open No. 2004-354182. Gazette
  • magnetic signals in the Z-axis direction are collected by a magnetic guiding unit installed in a groove provided on the substrate and on the substrate surface, and an induction installed on the substrate surface.
  • a magnetic field in the Z-axis direction is detected by guiding a magnetic signal in the Z-axis direction to the unit and guiding it in the horizontal direction.
  • the first thin film magnetic sensor formed on the inclined surface so that the sensitivity axis is not parallel to the surface of the insulating substrate, and the sensitivity axis is the surface of the insulating substrate.
  • a second thin film magnetic sensor formed on the flat portion so as not to be perpendicular to.
  • the first thin film magnetic sensor detects a Z-axis direction component of the external magnetic field.
  • the second thin film magnetic sensor detects an X-axis direction component and a Y-axis direction component of the external magnetic field.
  • a magnetoresistive element that detects a magnetic field of an X-axis direction component a magnetoresistive element that detects a magnetic field of a Y-axis direction component, and a magnetoresistance that detects a magnetic field of a Z-axis direction component
  • An element is required, and a three-dimensional magnetic field is detected by three magnetoresistive elements. Therefore, the configuration of the magnetic sensor described in Patent Document 1 is complicated compared to a conventional magnetic sensor that detects a magnetic field in a two-dimensional direction.
  • the magnetic sensor described in Patent Document 3 requires a magnetoresistive element that detects a magnetic field of a Z-axis direction component, and a magnetoresistive element that detects a magnetic field of an X-axis direction component and a Y-axis direction component. A magnetic field in the dimensional direction is detected by two magnetoresistive elements. Therefore, the configuration of the magnetic sensor described in Patent Document 3 is more complicated than a conventional magnetic sensor that detects a magnetic field in a two-dimensional direction.
  • the present invention has been made in view of the above problems, and an object thereof is to provide a magnetic sensor having a simple configuration by detecting a magnetic field in a three-dimensional direction with a single magnetoresistive element.
  • a magnetic sensor has an upper surface, a substrate provided with a groove having an inner surface connected to the upper surface, a first magnetoresistive element provided on the substrate and connected to each other to form a bridge circuit, and A second magnetoresistive element.
  • the first magnetoresistive element is composed of a magnetic film that continuously covers a part of the upper surface and the inner surface.
  • the second magnetoresistive element is composed of a magnetic film that covers the other part of the upper surface.
  • the inner surface includes a side surface perpendicular to a virtual plane including the upper surface.
  • the inner surface includes a bottom surface parallel to a virtual plane including the upper surface.
  • the said inner surface contains the curved bottom face.
  • the magnetic film constituting the first magnetoresistive element and the magnetic film constituting the second magnetoresistive element are made of the same material.
  • the first magnetoresistive element is provided in an annular shape or a spiral shape when viewed from a direction orthogonal to the upper surface.
  • the second magnetoresistive element is provided in a meander shape when viewed from a direction orthogonal to the upper surface.
  • the magnetic sensor includes two first magnetoresistive elements and two second magnetoresistive elements. Two first magnetoresistive elements and two second magnetoresistive elements are connected to each other to form a full bridge circuit.
  • the configuration of the magnetic sensor for detecting the magnetic field in the three-dimensional direction can be simplified.
  • FIG. 1 is a plan view showing the configuration of the magnetic sensor according to Embodiment 1 of the present invention.
  • FIG. 2 is an enlarged perspective view showing a II part of the magnetic sensor of FIG.
  • FIG. 3 is an enlarged perspective view showing a part III of the magnetic sensor in FIG. 1 to 3, the width direction of the substrate 110 to be described later is shown as the X-axis direction, the depth direction of the substrate 110 is shown as the Y-axis direction, and the thickness direction of the substrate 110 is shown as the Z-axis direction.
  • a magnetic sensor 100 As shown in FIGS. 1 to 3, a magnetic sensor 100 according to Embodiment 1 of the present invention includes a substrate 110 and a first magnetoresistive element R1, a second magnetoresistive element R2, and a first magnetic sensor provided on the substrate 110. A resistance element R3 and a second magnetoresistance element R4 are provided. In the present embodiment, the magnetic sensor 100 includes two first magnetoresistive elements and two second magnetoresistive elements.
  • the substrate 110 has an upper surface 111.
  • the substrate 110 has a rectangular outer shape when viewed from a direction orthogonal to the upper surface 111.
  • the outer shape of the substrate 110 is not limited to a rectangle, and may be a circle or an ellipse.
  • the substrate 110 is made of Si, for example.
  • the substrate 110 is provided with a groove 112 having an inner surface connected to the upper surface 111.
  • the groove 112 is formed in a shape corresponding to the pattern shape of first magnetoresistive elements R1 and R3 described later.
  • the inner surface of the groove portion 112 includes a side surface 113 perpendicular to a virtual plane including the upper surface 111 and a bottom surface 114 parallel to the virtual plane including the upper surface 111.
  • each of the first magnetoresistive elements R1, R3 and the second magnetoresistive elements R2, R4 is an AMR (Anisotropic Magneto Resistance) element.
  • each of the first magnetoresistive elements R1, R3 and the second magnetoresistive elements R2, R4 includes GMR (Giant Magneto Resistance), TMR (Tunnel Magneto Resistance), BMR (Ballistic Magneto Resistance), CMR (Colossal Magneto Resistance). It may be a magnetoresistive element.
  • each of the first magnetoresistive elements R1 and R3 and the second magnetoresistive elements R2 and R4 is magnetically provided in a meander-like pattern shape when viewed from the direction orthogonal to the upper surface 111 of the substrate 110.
  • the body membrane 120 is configured.
  • the magnetic film 120 constituting the first magnetoresistive elements R1 and R3 and the magnetic film 120 constituting the second magnetoresistive elements R2 and R4 are made of the same material.
  • the magnetic film 120 constituting the first magnetoresistive elements R1 and R3 includes a long portion extending in the X-axis direction and a short portion extending in the Y-axis direction, which are connected to each other.
  • the magnetic film 120 constituting the second magnetoresistive elements R2 and R4 includes a long part extending in the Y-axis direction and a short part extending in the X-axis direction, which are connected to each other.
  • the magnetic film 120 constituting the first magnetoresistive elements R1, R3 continuously covers a part of the upper surface 111 of the substrate 110 and the inner surface of the groove 112.
  • the magnetic film 120 constituting the second magnetoresistive elements R2 and R4 covers another part of the upper surface 111 of the substrate 110.
  • the magnetic film 120 is a thin film of a ferromagnetic material such as permalloy.
  • the magnetization direction of the magnetic film 120 is determined by the shape anisotropy of the magnetic film 120.
  • a barber pole electrode or a bias magnet (not shown) is provided in order to bias the current to flow through the magnetic film 120 in a direction that forms a predetermined angle with respect to the magnetization direction of the magnetic film 120.
  • the portions provided on the top surface 111 and the bottom surface 114 are magnetic field components in the Y-axis direction orthogonal to the longitudinal portion extending in the X-axis direction. When is applied, the electric resistance value becomes the smallest.
  • a portion provided on the side surface 113 is applied with a magnetic field component in the Z-axis direction orthogonal to the longitudinal portion extending in the X-axis direction. The electric resistance value is the smallest.
  • the magnetic film 120 constituting the second magnetoresistive elements R2 and R4 has the smallest electric resistance value when a magnetic field component in the X-axis direction orthogonal to the longitudinal portion extending in the Y-axis direction is applied.
  • the magnetic sensor 100 further includes a first midpoint Vout1, a second midpoint Vout2, a power supply terminal Vcc, and a ground terminal Gnd provided on the substrate 110.
  • Each of the first magnetoresistive element R1 and the second magnetoresistive element R2 is connected to the first middle point Vout1.
  • Each of the first magnetoresistive element R3 and the second magnetoresistive element R4 is connected to the second middle point Vout2.
  • Each of the second magnetoresistive element R2 and the first magnetoresistive element R3 is connected to a power supply terminal Vcc to which a current is input.
  • Each of the first magnetoresistive element R1 and the second magnetoresistive element R4 is connected to the ground terminal Gnd.
  • FIG. 4 is a perspective view showing a state in which an external magnetic field is applied to the first magnetoresistive element of the magnetic sensor according to the first embodiment of the present invention.
  • FIG. 5 is a perspective view showing a state in which an external magnetic field is applied to the second magnetoresistive element of the magnetic sensor according to Embodiment 1 of the present invention.
  • the current I input from the power supply terminal Vcc flows through the magnetic film 120 constituting each of the first magnetoresistive elements R1 and R3 and the second magnetoresistive elements R2 and R4.
  • the external magnetic field includes a magnetic field component Bp in the X-axis direction and the Y-axis direction and a magnetic field component Bz in the Z-axis direction.
  • the magnetic field component Bp travels in a direction substantially perpendicular to the longitudinal portion of the magnetic film 120 constituting the first magnetoresistive elements R1 and R3, and the magnetic field component Bp of the magnetic film 120 constituting the second magnetoresistive elements R2 and R4. It proceeds in a direction substantially parallel to the longitudinal portion.
  • the magnetic film 120 constituting the first magnetoresistive elements R1 and R3 when an external magnetic field is applied, in the magnetic film 120 constituting the first magnetoresistive elements R1 and R3, the electrical resistance values of the portions provided on the top surface 111 and the bottom surface 114 are greatly reduced. On the other hand, the electric resistance value of the magnetic film 120 constituting the second magnetoresistive elements R2 and R4 hardly decreases.
  • the magnetic field component Bz travels in a direction substantially perpendicular to the longitudinal portion of the magnetic film 120 constituting the first magnetoresistive elements R1 and R3. Therefore, when an external magnetic field is applied, the electric resistance value of the portion provided on the side surface 113 in the magnetic film 120 constituting the first magnetoresistive elements R1 and R3 is greatly reduced. On the other hand, the second magnetoresistive elements R2 and R4 do not detect the magnetic field component Bz in the Z-axis direction.
  • the first magnetoresistive elements R1 and R3 can detect both the magnetic field component Bp in the X-axis direction and the Y-axis direction and the magnetic field component Bz in the Z-axis direction. That is, a magnetic field in a three-dimensional direction can be detected by one first magnetoresistive element. Note that, regardless of the incident direction of the external magnetic field, the electric resistance values of the first magnetoresistive elements R1 and R3 fluctuate, and the current I is the electric resistance value of the first magnetoresistive elements R1 and R3.
  • the first magnetoresistive elements R1 and R3 have sensitivity in the three-dimensional direction because they flow preferentially through the lowered portion.
  • FIG. 6 is an equivalent circuit diagram of the magnetic sensor according to the first embodiment of the present invention.
  • the first magnetoresistive element R1 includes a variable resistor R1P that detects magnetic field components in the X-axis direction and the Y-axis direction, and a Z-axis. And a variable resistance portion R1V that detects a magnetic field component in the direction.
  • the variable resistor portion R1P and the variable resistor portion R1V are connected in parallel between the first middle point Vout1 and the ground terminal Gnd.
  • the first magnetoresistive element R3 includes a variable resistor R3P that detects magnetic field components in the X-axis direction and the Y-axis direction, and a variable resistor R3V that detects magnetic field components in the Z-axis direction.
  • the variable resistor portion R3P and the variable resistor portion R3V are connected in parallel between the power supply terminal Vcc and the second middle point Vout2.
  • FIG. 7 is a partial cross-sectional view showing a state in which a photoresist is formed on a substrate.
  • a photoresist 10 is formed on the upper surface 111 of the substrate 110.
  • the photoresist 10 is provided with an opening at a portion corresponding to the position where the groove 112 is formed.
  • the photoresist 10 may be either a negative type or a positive type.
  • a hard mask made of, for example, silicon nitride, silicon carbonitride, or metal may be formed on the upper surface 111 of the substrate 110.
  • FIG. 8 is a partial cross-sectional view showing a state in which a groove is formed in the substrate by etching.
  • the photoresist 10 is removed, so that a groove 112 is provided in the substrate 110 as shown in FIG. As a result, the side surface 113 and the bottom surface 114 which are the inner surfaces of the groove 112 are exposed.
  • the etching method may be any method that allows anisotropic etching, and may be either dry etching or wet etching.
  • the method for forming the groove 112 is not limited to etching, and cutting or laser scribing may be used.
  • FIG. 9 is a partial cross-sectional view showing a state where a magnetic film is formed on a substrate.
  • the magnetic film 120 is formed on the substrate 110 provided with the groove 112.
  • a copper wiring technique used in manufacturing LSI (large scale integration) or a TSV (through silicon via) technique is applied.
  • Can do As a film forming method, sputtering, vapor deposition, or the like can be used.
  • FIG. 10 is a partial cross-sectional view showing a state in which a photoresist is formed on a substrate on which a magnetic film is formed.
  • a photoresist 11 is provided so as to correspond to each pattern shape of the first magnetoresistive element and the second magnetoresistive element.
  • the groove portion 112 is covered with the photoresist 11.
  • the photoresist 11 may be either a negative type or a positive type.
  • FIG. 11 is a partial cross-sectional view showing a state where an unnecessary magnetic film is removed by etching. As shown in FIG. 11, by patterning the magnetic film 120 and removing the photoresist 11, the first magnetoresistive elements R1, R3 and the second magnetoresistive elements R2, R4 are formed.
  • the magnetic sensor 100 according to Embodiment 1 of the present invention can detect a magnetic field in a three-dimensional direction by the first magnetoresistive elements R1 and R3, and the first magnetoresistive elements R1 and R3 and the second magnetoresistive elements.
  • the pattern shape of each of the elements R2 and R4 is the same as the pattern shape of a magnetoresistive element that detects a magnetic field in a conventional two-dimensional direction, and has a simple configuration.
  • all the resistors constituting the bridge circuit are magnetoresistive elements. For this reason, all the resistors can be formed of the same material. Furthermore, all resistors can be manufactured in the same manufacturing process.
  • the detection sensitivity of the magnetic field component in the Z-axis direction can be changed by appropriately adjusting the width and depth of the groove 112. Moreover, the detection sensitivity of the magnetic field component in the Z-axis direction can be changed by appropriately adjusting the shape of the inner surface of the groove 112.
  • FIG. 12 is a partial cross-sectional view showing a configuration of a first magnetoresistive element according to a first modification of the magnetic sensor according to the first embodiment of the present invention.
  • FIG. 13 is a partial cross-sectional view showing the configuration of the first magnetoresistance element according to the second modification example of the magnetic sensor according to the first embodiment of the present invention.
  • the inner surface of the groove 112 a has a side surface 113 perpendicular to a virtual plane including the upper surface 111 and a virtual surface including the upper surface 111.
  • a bottom surface 114 parallel to the plane and an inclined surface 115 extending in a direction intersecting with a virtual plane including the upper surface 111 and connecting the side surface 113 and the bottom surface 114 are formed.
  • the inner surface of the groove 112b includes a side surface 113 perpendicular to a virtual plane including the upper surface 111, and a curved bottom surface 116. It is composed of
  • the magnetic sensor 100 includes a Wheatstone bridge type full-bridge circuit, but is not limited thereto, and may include a half-bridge circuit.
  • FIG. 14 is an equivalent circuit diagram of a magnetic sensor according to a third modification of the magnetic sensor according to Embodiment 1 of the present invention.
  • the first magnetoresistive element R1 and the first magnetoresistive element R1 are connected between the power supply terminal Vcc and the ground terminal Gnd.
  • Two magnetoresistive elements R2 are connected in series.
  • a first middle point Vout1 is connected between the first magnetoresistive element R1 and the second magnetoresistive element R2.
  • An external magnetic field can be detected based on a change in potential difference between the first middle point Vout1 and the ground terminal Gnd.
  • Embodiment 2 a magnetic sensor according to Embodiment 2 of the present invention will be described with reference to the drawings.
  • the magnetic sensor according to the second embodiment of the present invention is different from the magnetic sensor 100 according to the first embodiment of the present invention only in the pattern shape of the first magnetoresistive element, and therefore the magnetic sensor 100 according to the first embodiment of the present invention.
  • the description of the same configuration as in FIG. 1 is different from the magnetic sensor 100 according to the first embodiment of the present invention only in the pattern shape of the first magnetoresistive element, and therefore the magnetic sensor 100 according to the first embodiment of the present invention.
  • FIG. 15 is a plan view showing the pattern shape of the first magnetoresistive element of the magnetic sensor according to the second embodiment of the present invention.
  • the first magnetoresistive elements R ⁇ b> 1 and R ⁇ b> 3 are configured by a magnetic film 120 provided in a double spiral pattern when viewed from a direction orthogonal to the upper surface 111 of the substrate 110.
  • the double spiral pattern includes one spiral pattern, the other spiral pattern, and an S-shape that connects one spiral pattern and the other spiral pattern at the center of the double spiral pattern. Includes patterns.
  • the double spiral pattern may be wound in the opposite direction, and in this case, the central portion of the double spiral pattern is constituted by an inverted S-shaped pattern.
  • the double spiral pattern is mainly configured by winding a substantially arc-shaped curved portion. Since the arc is an approximate shape when the number of corners of the polygon becomes infinitely large, the direction of the current flowing through the double spiral pattern extends over almost all directions (360 °) in the horizontal direction. . Therefore, the first magnetoresistive elements R1 and R3 can detect the external magnetic field over substantially the entire horizontal direction (360 °). In addition, since each of the first magnetoresistive elements R1 and R3 does not include a linear extending portion, anisotropy of magnetic field detection is reduced.
  • the first magnetoresistive elements R1 and R3 may be configured by the magnetic film 120 provided in an annular pattern shape when viewed from the direction orthogonal to the upper surface 111 of the substrate 110.
  • the magnetic film 120 is provided over the entire circumference in the annular circumferential direction.
  • the annular shape is not limited to a circle but may be an ellipse.
  • the groove 112 may not be formed over the entire pattern shape of the first magnetoresistive elements R1 and R3. However, the groove 112 may be provided over the entire circumference in the circumferential direction of the pattern shape. This is preferable from the viewpoint of reducing detection anisotropy.
  • Embodiment 3 a magnetic sensor according to Embodiment 3 of the present invention will be described with reference to the drawings.
  • the magnetic sensor according to the third embodiment of the present invention differs from the magnetic sensor 100 according to the first embodiment of the present invention only in the pattern shape of the first magnetoresistive element and the second magnetoresistive element. The description of the same configuration as that of the magnetic sensor 100 according to 1 will not be repeated.
  • FIG. 16 is a plan view showing the configuration of the magnetic sensor according to the third embodiment of the present invention.
  • the first magnetoresistive elements R ⁇ b> 1 and R ⁇ b> 3 are double spiral patterns when viewed from the direction orthogonal to the upper surface 111 of the substrate 110.
  • the magnetic film 120 is provided in a shape.
  • the second magnetoresistive elements R2 and R4 are configured by a magnetic film 120 provided in a meandering pattern shape when viewed from a direction orthogonal to the upper surface 111 of the substrate 110.
  • the longitudinal portion of the magnetic film 120 constituting the second magnetoresistive elements R2 and R4 is formed in a zigzag manner.
  • the length of the linearly extending portion of the magnetic film 120 constituting the second magnetoresistive elements R2 and R4 is 10 ⁇ m or less.
  • the resistance change rate of the magnetoresistive element decreases as the length of the linearly extending portion of the magnetic film 120 becomes shorter.
  • the resistance change rate of the second magnetoresistive elements R2 and R4 in which the length of the linearly extending portion of the magnetic film 120 is 10 ⁇ m is less than 0.5%. Therefore, the second magnetoresistive elements R2 and R4 hardly change in electric resistance value even when an external magnetic field is applied.
  • the resistance change rates of the second magnetoresistive elements R2 and R4 are smaller than the resistance change rates of the first magnetoresistive elements R1 and R3. That is, the first magnetoresistive elements R1 and R3 are so-called magnetosensitive resistors whose electric resistance values change when an external magnetic field is applied.
  • the second magnetoresistive elements R2 and R4 are fixed resistors whose electric resistance values hardly change even when an external magnetic field is applied.
  • the degree of freedom of arrangement of the magnetic sensor 300 with respect to an external magnetic field can be increased.

Abstract

This magnetic sensor is equipped with: a substrate (110), which has an upper surface (111), and which is provided with a trench section (112) having an inner surface connected to the upper surface (111); and a first magnetoresistive element and a second magnetoresistive element, which are provided on the substrate (110), and which constitute a bridge circuit by being connected to each other. The first magnetoresistive element is configured from a magnetic film (120) continuously covering a part of the upper surface (111) and the inner surface. The second magnetoresistive element is configured from the magnetic film (120) covering another part of the upper surface (111).

Description

磁気センサMagnetic sensor
　本発明は、磁気センサに関する。 The present invention relates to a magnetic sensor.
　３次元方向の磁界の検出を図った磁気センサを開示した先行文献として、特開平１１－２７４５９８号公報(特許文献１)、特表２０１６－５０２０９８号公報(特許文献２)および特開２００４－３５４１８２号公報(特許文献３)がある。 As prior documents disclosing magnetic sensors that detect a magnetic field in a three-dimensional direction, Japanese Patent Laid-Open No. 11-274598 (Patent Document 1), Japanese Translation of PCT International Publication No. 2016-502098 (Patent Document 2) and Japanese Patent Application Laid-Open No. 2004-354182. Gazette (Patent Document 3).
　特許文献１に記載された磁気センサにおいては、平面状の３つの磁気抵抗素子が互いに直交する３面に立体配置されていることにより、３次元方向において等方的に磁界を検出することを図っている。 In the magnetic sensor described in Patent Document 1, three planar magnetoresistive elements are arranged in three planes orthogonal to each other to detect a magnetic field isotropically in a three-dimensional direction. ing.
　特許文献２に記載された磁気センサにおいては、基板に設けられた溝内および基板表面に設置されている導磁ユニットによって、Ｚ軸方向の磁気信号を収集し、基板表面に設置されている誘導ユニットに、Ｚ軸方向の磁気信号を水平方向にガイドして伝えることにより、Ｚ軸方向の磁界を検出している。 In the magnetic sensor described in Patent Document 2, magnetic signals in the Z-axis direction are collected by a magnetic guiding unit installed in a groove provided on the substrate and on the substrate surface, and an induction installed on the substrate surface. A magnetic field in the Z-axis direction is detected by guiding a magnetic signal in the Z-axis direction to the unit and guiding it in the horizontal direction.
　特許文献３に記載された磁気センサチップにおいては、感度軸が絶縁基板の表面に対して平行にならないように、傾斜面上に形成された第１薄膜磁気センサと、感度軸が絶縁基板の表面に対して垂直にならないように、平坦部上に形成された第２薄膜磁気センサとを備えている。第１薄膜磁気センサは、外部磁界のうちのＺ軸方向成分を検出する。第２薄膜磁気センサは、外部磁界のうちのＸ軸方向成分およびＹ軸方向成分を検出する。 In the magnetic sensor chip described in Patent Document 3, the first thin film magnetic sensor formed on the inclined surface so that the sensitivity axis is not parallel to the surface of the insulating substrate, and the sensitivity axis is the surface of the insulating substrate. And a second thin film magnetic sensor formed on the flat portion so as not to be perpendicular to. The first thin film magnetic sensor detects a Z-axis direction component of the external magnetic field. The second thin film magnetic sensor detects an X-axis direction component and a Y-axis direction component of the external magnetic field.
特開平１１－２７４５９８号公報JP 11-274598 A 特表２０１６－５０２０９８号公報Special table 2016-502098 gazette 特開２００４－３５４１８２号公報JP 2004-354182 A
　特許文献１に記載の磁気センサにおいては、Ｘ軸方向成分の磁界を検出する磁気抵抗素子、Ｙ軸方向成分の磁界を検出する磁気抵抗素子、および、Ｚ軸方向成分の磁界を検出する磁気抵抗素子が必要であり、３次元方向の磁界を３つの磁気抵抗素子によって検出している。そのため、特許文献１に記載の磁気センサは、従来の２次元方向の磁界を検出する磁気センサに比べて、構成が複雑である。 In the magnetic sensor described in Patent Document 1, a magnetoresistive element that detects a magnetic field of an X-axis direction component, a magnetoresistive element that detects a magnetic field of a Y-axis direction component, and a magnetoresistance that detects a magnetic field of a Z-axis direction component An element is required, and a three-dimensional magnetic field is detected by three magnetoresistive elements. Therefore, the configuration of the magnetic sensor described in Patent Document 1 is complicated compared to a conventional magnetic sensor that detects a magnetic field in a two-dimensional direction.
　特許文献２に記載された磁気センサにおいては、Ｚ軸方向の磁気信号を水平方向に伝送するための誘導ユニットを設置しなければならない。そのため、特許文献２に記載の磁気センサは、従来の２次元方向の磁界を検出する磁気センサに比べて、構成が複雑である。 In the magnetic sensor described in Patent Document 2, an induction unit for transmitting a magnetic signal in the Z-axis direction in the horizontal direction must be installed. Therefore, the configuration of the magnetic sensor described in Patent Document 2 is more complicated than a conventional magnetic sensor that detects a magnetic field in a two-dimensional direction.
　特許文献３に記載された磁気センサにおいては、Ｚ軸方向成分の磁界を検出する磁気抵抗素子、並びに、Ｘ軸方向成分およびＹ軸方向成分の磁界を検出する磁気抵抗素子が必要であり、３次元方向の磁界を２つの磁気抵抗素子によって検出している。そのため、特許文献３に記載の磁気センサは、従来の２次元方向の磁界を検出する磁気センサに比べて、構成が複雑である。 The magnetic sensor described in Patent Document 3 requires a magnetoresistive element that detects a magnetic field of a Z-axis direction component, and a magnetoresistive element that detects a magnetic field of an X-axis direction component and a Y-axis direction component. A magnetic field in the dimensional direction is detected by two magnetoresistive elements. Therefore, the configuration of the magnetic sensor described in Patent Document 3 is more complicated than a conventional magnetic sensor that detects a magnetic field in a two-dimensional direction.
　本発明は上記の問題点に鑑みてなされたものであって、３次元方向の磁界を１つの磁気抵抗素子で検出して、簡易な構成を有する、磁気センサを提供することを目的とする。 The present invention has been made in view of the above problems, and an object thereof is to provide a magnetic sensor having a simple configuration by detecting a magnetic field in a three-dimensional direction with a single magnetoresistive element.
　本発明に基づく磁気センサは、上面を有し、この上面に繋がった内表面を有する溝部が設けられた基板と、基板に設けられ、互いに接続されてブリッジ回路を構成する第１磁気抵抗素子および第２磁気抵抗素子とを備える。第１磁気抵抗素子は、上記上面の一部および上記内表面を連続して覆う磁性体膜で構成されている。第２磁気抵抗素子は、上記上面の他の一部を覆う磁性体膜で構成されている。 A magnetic sensor according to the present invention has an upper surface, a substrate provided with a groove having an inner surface connected to the upper surface, a first magnetoresistive element provided on the substrate and connected to each other to form a bridge circuit, and A second magnetoresistive element. The first magnetoresistive element is composed of a magnetic film that continuously covers a part of the upper surface and the inner surface. The second magnetoresistive element is composed of a magnetic film that covers the other part of the upper surface.
　本発明の一形態においては、上記内表面が、上記上面を含む仮想平面に垂直な側面を含む。 In one embodiment of the present invention, the inner surface includes a side surface perpendicular to a virtual plane including the upper surface.
　本発明の一形態においては、上記内表面が、上記上面を含む仮想平面に平行な底面を含む。 In one embodiment of the present invention, the inner surface includes a bottom surface parallel to a virtual plane including the upper surface.
　本発明の一形態においては、上記内表面が、湾曲した底面を含む。
　本発明の一形態においては、第１磁気抵抗素子を構成する磁性体膜と、第２磁気抵抗素子を構成する磁性体膜とが、同一の材料で構成されている。 In one form of this invention, the said inner surface contains the curved bottom face.
In one embodiment of the present invention, the magnetic film constituting the first magnetoresistive element and the magnetic film constituting the second magnetoresistive element are made of the same material.
　本発明の一形態においては、第１磁気抵抗素子が、上記上面に直交する方向から見て、円環状または渦巻状に設けられている。 In one embodiment of the present invention, the first magnetoresistive element is provided in an annular shape or a spiral shape when viewed from a direction orthogonal to the upper surface.
　本発明の一形態においては、第２磁気抵抗素子が、上記上面に直交する方向から見て、ミアンダ状に設けられている。 In one embodiment of the present invention, the second magnetoresistive element is provided in a meander shape when viewed from a direction orthogonal to the upper surface.
　本発明の一形態においては、磁気センサは、第１磁気抵抗素子を２つ含み、第２磁気抵抗素子を２つ含む。２つの第１磁気抵抗素子と２つの第２磁気抵抗素子とが、互いに接続されてフルブリッジ回路を構成している。 In one embodiment of the present invention, the magnetic sensor includes two first magnetoresistive elements and two second magnetoresistive elements. Two first magnetoresistive elements and two second magnetoresistive elements are connected to each other to form a full bridge circuit.
　本発明によれば、３次元方向の磁界を１つの磁気抵抗素子で検出することができるため、３次元方向の磁界を検出する磁気センサの構成を簡易にできる。 According to the present invention, since the magnetic field in the three-dimensional direction can be detected by one magnetoresistive element, the configuration of the magnetic sensor for detecting the magnetic field in the three-dimensional direction can be simplified.
本発明の実施形態１に係る磁気センサの構成を示す平面図である。It is a top view which shows the structure of the magnetic sensor which concerns on Embodiment 1 of this invention. 図１の磁気センサのＩＩ部を拡大して示す斜視図である。It is a perspective view which expands and shows the II section of the magnetic sensor of FIG. 図１の磁気センサのＩＩＩ部を拡大して示す斜視図である。It is a perspective view which expands and shows the III part of the magnetic sensor of FIG. 本発明の実施形態１に係る磁気センサの第１磁気抵抗素子に外部磁界が印加されている状態を示す斜視図である。It is a perspective view which shows the state in which the external magnetic field is applied to the 1st magnetoresistive element of the magnetic sensor which concerns on Embodiment 1 of this invention. 本発明の実施形態１に係る磁気センサの第２磁気抵抗素子に外部磁界が印加されている状態を示す斜視図である。It is a perspective view which shows the state in which the external magnetic field is applied to the 2nd magnetoresistive element of the magnetic sensor which concerns on Embodiment 1 of this invention. 本発明の実施形態１に係る磁気センサの等価回路図である。It is an equivalent circuit schematic of the magnetic sensor which concerns on Embodiment 1 of this invention. 基板上にフォトレジストを形成した状態を示す部分断面図である。It is a fragmentary sectional view showing the state where a photoresist was formed on a substrate. エッチングにより基板に溝部を形成した状態を示す部分断面図である。It is a fragmentary sectional view which shows the state which formed the groove part in the board | substrate by the etching. 基板上に磁性体膜を形成した状態を示す部分断面図である。It is a fragmentary sectional view which shows the state in which the magnetic body film was formed on the board | substrate. 磁性体膜が成膜された基板上にフォトレジストを形成した状態を示す部分断面図である。It is a fragmentary sectional view which shows the state which formed the photoresist on the board | substrate with which the magnetic body film was formed. エッチングにより不要な磁性体膜を除去した状態を示す部分断面図である。It is a fragmentary sectional view which shows the state which removed the unnecessary magnetic body film by the etching. 本発明の実施形態１に係る磁気センサの第１変形例に係る第１磁気抵抗素子の構成を示す部分断面図である。It is a fragmentary sectional view showing the composition of the 1st magnetoresistive element concerning the 1st modification of the magnetic sensor concerning Embodiment 1 of the present invention. 本発明の実施形態１に係る磁気センサの第２変形例に係る第１磁気抵抗素子の構成を示す部分断面図である。It is a fragmentary sectional view showing the composition of the 1st magnetoresistive element concerning the 2nd modification of the magnetic sensor concerning Embodiment 1 of the present invention. 本発明の実施形態１に係る磁気センサの第３変形例に係る磁気センサの等価回路図である。It is an equivalent circuit schematic of the magnetic sensor which concerns on the 3rd modification of the magnetic sensor which concerns on Embodiment 1 of this invention. 本発明の実施形態２に係る磁気センサの第１磁気抵抗素子のパターン形状を示す平面図である。It is a top view which shows the pattern shape of the 1st magnetoresistive element of the magnetic sensor which concerns on Embodiment 2 of this invention. 本発明の実施形態３に係る磁気センサの構成を示す平面図である。It is a top view which shows the structure of the magnetic sensor which concerns on Embodiment 3 of this invention.
　以下、本発明の各実施形態に係る磁気センサについて図を参照して説明する。以下の実施形態の説明においては、図中の同一または相当部分には同一符号を付して、その説明は繰り返さない。 Hereinafter, the magnetic sensor according to each embodiment of the present invention will be described with reference to the drawings. In the following description of the embodiments, the same or corresponding parts in the drawings are denoted by the same reference numerals, and the description thereof will not be repeated.
　(実施形態１)
　図１は、本発明の実施形態１に係る磁気センサの構成を示す平面図である。図２は、図１の磁気センサのＩＩ部を拡大して示す斜視図である。図３は、図１の磁気センサのＩＩＩ部を拡大して示す斜視図である。図１～３においては、後述する基板１１０の幅方向をＸ軸方向、基板１１０の奥行方向をＹ軸方向、基板１１０の厚さ方向をＺ軸方向として示している。 (Embodiment 1)
FIG. 1 is a plan view showing the configuration of the magnetic sensor according to Embodiment 1 of the present invention. FIG. 2 is an enlarged perspective view showing a II part of the magnetic sensor of FIG. FIG. 3 is an enlarged perspective view showing a part III of the magnetic sensor in FIG. 1 to 3, the width direction of the substrate 110 to be described later is shown as the X-axis direction, the depth direction of the substrate 110 is shown as the Y-axis direction, and the thickness direction of the substrate 110 is shown as the Z-axis direction.
　図１～３に示すように、本発明の実施形態１に係る磁気センサ１００は、基板１１０と、基板１１０に設けられた、第１磁気抵抗素子Ｒ１、第２磁気抵抗素子Ｒ２、第１磁気抵抗素子Ｒ３および第２磁気抵抗素子Ｒ４とを備える。本実施形態においては、磁気センサ１００は、２つの第１磁気抵抗素子と、２つの第２磁気抵抗素子とを含んでいる。 As shown in FIGS. 1 to 3, a magnetic sensor 100 according to Embodiment 1 of the present invention includes a substrate 110 and a first magnetoresistive element R1, a second magnetoresistive element R2, and a first magnetic sensor provided on the substrate 110. A resistance element R3 and a second magnetoresistance element R4 are provided. In the present embodiment, the magnetic sensor 100 includes two first magnetoresistive elements and two second magnetoresistive elements.
　基板１１０は、上面１１１を有する。基板１１０は、上面１１１に直交する方向から見て、矩形状の外形を有している。ただし、基板１１０の外形は、矩形に限られず、円形または楕円形などでもよい。基板１１０は、たとえば、Ｓｉで構成されている。 The substrate 110 has an upper surface 111. The substrate 110 has a rectangular outer shape when viewed from a direction orthogonal to the upper surface 111. However, the outer shape of the substrate 110 is not limited to a rectangle, and may be a circle or an ellipse. The substrate 110 is made of Si, for example.
　基板１１０には、上面１１１に繋がった内表面を有する溝部１１２が設けられている。溝部１１２は、後述する第１磁気抵抗素子Ｒ１，Ｒ３のパターン形状に対応した形状で形成されている。本実施形態においては、溝部１１２の内表面は、上面１１１を含む仮想平面に垂直な側面１１３と、上面１１１を含む仮想平面に平行な底面１１４とから構成されている。 The substrate 110 is provided with a groove 112 having an inner surface connected to the upper surface 111. The groove 112 is formed in a shape corresponding to the pattern shape of first magnetoresistive elements R1 and R3 described later. In the present embodiment, the inner surface of the groove portion 112 includes a side surface 113 perpendicular to a virtual plane including the upper surface 111 and a bottom surface 114 parallel to the virtual plane including the upper surface 111.
　本実施形態においては、第１磁気抵抗素子Ｒ１，Ｒ３および第２磁気抵抗素子Ｒ２，Ｒ４の各々は、ＡＭＲ(Anisotropic　Magneto　Resistance)素子である。ただし、第１磁気抵抗素子Ｒ１，Ｒ３および第２磁気抵抗素子Ｒ２，Ｒ４の各々が、ＧＭＲ(Giant　Magneto　Resistance)、ＴＭＲ(Tunnel　Magneto　Resistance)、ＢＭＲ(Ballistic　Magneto　Resistance)、ＣＭＲ(Colossal　Magneto　Resistance)などの磁気抵抗素子であってもよい。 In the present embodiment, each of the first magnetoresistive elements R1, R3 and the second magnetoresistive elements R2, R4 is an AMR (Anisotropic Magneto Resistance) element. However, each of the first magnetoresistive elements R1, R3 and the second magnetoresistive elements R2, R4 includes GMR (Giant Magneto Resistance), TMR (Tunnel Magneto Resistance), BMR (Ballistic Magneto Resistance), CMR (Colossal Magneto Resistance). It may be a magnetoresistive element.
　本実施形態においては、第１磁気抵抗素子Ｒ１，Ｒ３および第２磁気抵抗素子Ｒ２，Ｒ４の各々は、基板１１０の上面１１１に直交する方向から見て、ミアンダ状のパターン形状に設けられた磁性体膜１２０で構成されている。第１磁気抵抗素子Ｒ１，Ｒ３を構成する磁性体膜１２０と、第２磁気抵抗素子Ｒ２，Ｒ４を構成する磁性体膜１２０とが、同一の材料で構成されている。 In the present embodiment, each of the first magnetoresistive elements R1 and R3 and the second magnetoresistive elements R2 and R4 is magnetically provided in a meander-like pattern shape when viewed from the direction orthogonal to the upper surface 111 of the substrate 110. The body membrane 120 is configured. The magnetic film 120 constituting the first magnetoresistive elements R1 and R3 and the magnetic film 120 constituting the second magnetoresistive elements R2 and R4 are made of the same material.
　第１磁気抵抗素子Ｒ１，Ｒ３を構成する磁性体膜１２０は、互いに接続されている、Ｘ軸方向に延在する長手部と、Ｙ軸方向に延在する短手部とを含む。第２磁気抵抗素子Ｒ２，Ｒ４を構成する磁性体膜１２０は、互いに接続されている、Ｙ軸方向に延在する長手部と、Ｘ軸方向に延在する短手部とを含む。 The magnetic film 120 constituting the first magnetoresistive elements R1 and R3 includes a long portion extending in the X-axis direction and a short portion extending in the Y-axis direction, which are connected to each other. The magnetic film 120 constituting the second magnetoresistive elements R2 and R4 includes a long part extending in the Y-axis direction and a short part extending in the X-axis direction, which are connected to each other.
　第１磁気抵抗素子Ｒ１，Ｒ３を構成する磁性体膜１２０は、基板１１０の上面１１１の一部および溝部１１２の内表面を連続して覆っている。第２磁気抵抗素子Ｒ２，Ｒ４を構成する磁性体膜１２０は、基板１１０の上面１１１の他の一部を覆っている。 The magnetic film 120 constituting the first magnetoresistive elements R1, R3 continuously covers a part of the upper surface 111 of the substrate 110 and the inner surface of the groove 112. The magnetic film 120 constituting the second magnetoresistive elements R2 and R4 covers another part of the upper surface 111 of the substrate 110.
　磁性体膜１２０は、パーマロイなどの強磁性体の薄膜である。磁性体膜１２０の形状異方性により、磁性体膜１２０の磁化方向が決まっている。磁性体膜１２０の磁化方向に対して所定の角度をなす方向に電流が磁性体膜１２０を流れるようにバイアスするために、図示しないバーバーポール型電極またはバイアス磁石が設けられている。 The magnetic film 120 is a thin film of a ferromagnetic material such as permalloy. The magnetization direction of the magnetic film 120 is determined by the shape anisotropy of the magnetic film 120. A barber pole electrode or a bias magnet (not shown) is provided in order to bias the current to flow through the magnetic film 120 in a direction that forms a predetermined angle with respect to the magnetization direction of the magnetic film 120.
　第１磁気抵抗素子Ｒ１，Ｒ３を構成する磁性体膜１２０において、上面１１１上および底面１１４上に設けられている部分は、Ｘ軸方向に延在する長手部と直交するＹ軸方向の磁界成分が印加されているとき、電気抵抗値が最も小さくなる。第１磁気抵抗素子Ｒ１，Ｒ３を構成する磁性体膜１２０において、側面１１３上に設けられている部分は、Ｘ軸方向に延在する長手部と直交するＺ軸方向の磁界成分が印加されているとき、電気抵抗値が最も小さくなる。 In the magnetic film 120 constituting the first magnetoresistive elements R1 and R3, the portions provided on the top surface 111 and the bottom surface 114 are magnetic field components in the Y-axis direction orthogonal to the longitudinal portion extending in the X-axis direction. When is applied, the electric resistance value becomes the smallest. In the magnetic film 120 constituting the first magnetoresistive elements R1 and R3, a portion provided on the side surface 113 is applied with a magnetic field component in the Z-axis direction orthogonal to the longitudinal portion extending in the X-axis direction. The electric resistance value is the smallest.
　第２磁気抵抗素子Ｒ２，Ｒ４を構成する磁性体膜１２０は、Ｙ軸方向に延在する長手部と直交するＸ軸方向の磁界成分が印加されているとき、電気抵抗値が最も小さくなる。 The magnetic film 120 constituting the second magnetoresistive elements R2 and R4 has the smallest electric resistance value when a magnetic field component in the X-axis direction orthogonal to the longitudinal portion extending in the Y-axis direction is applied.
　磁気センサ１００は、基板１１０上に設けられた、第１中点Ｖｏｕｔ１、第２中点Ｖｏｕｔ２、電源端子Ｖｃｃおよび接地端子Ｇｎｄをさらに備える。 The magnetic sensor 100 further includes a first midpoint Vout1, a second midpoint Vout2, a power supply terminal Vcc, and a ground terminal Gnd provided on the substrate 110.
　第１磁気抵抗素子Ｒ１および第２磁気抵抗素子Ｒ２の各々は、第１中点Ｖｏｕｔ１に接続されている。第１磁気抵抗素子Ｒ３および第２磁気抵抗素子Ｒ４の各々は、第２中点Ｖｏｕｔ２に接続されている。 Each of the first magnetoresistive element R1 and the second magnetoresistive element R2 is connected to the first middle point Vout1. Each of the first magnetoresistive element R3 and the second magnetoresistive element R4 is connected to the second middle point Vout2.
　第２磁気抵抗素子Ｒ２および第１磁気抵抗素子Ｒ３の各々は、電流が入力される電源端子Ｖｃｃに接続されている。第１磁気抵抗素子Ｒ１および第２磁気抵抗素子Ｒ４の各々は、接地端子Ｇｎｄに接続されている。上記の接続により、本実施形態においては、２つの第１磁気抵抗素子Ｒ１，Ｒ３と２つの第２磁気抵抗素子Ｒ２，Ｒ４とが、互いに接続されてホイートストンブリッジ型のフルブリッジ回路を構成している。 Each of the second magnetoresistive element R2 and the first magnetoresistive element R3 is connected to a power supply terminal Vcc to which a current is input. Each of the first magnetoresistive element R1 and the second magnetoresistive element R4 is connected to the ground terminal Gnd. With the above connection, in the present embodiment, the two first magnetoresistive elements R1 and R3 and the two second magnetoresistive elements R2 and R4 are connected to each other to form a Wheatstone bridge type full bridge circuit. Yes.
　図４は、本発明の実施形態１に係る磁気センサの第１磁気抵抗素子に外部磁界が印加されている状態を示す斜視図である。図５は、本発明の実施形態１に係る磁気センサの第２磁気抵抗素子に外部磁界が印加されている状態を示す斜視図である。 FIG. 4 is a perspective view showing a state in which an external magnetic field is applied to the first magnetoresistive element of the magnetic sensor according to the first embodiment of the present invention. FIG. 5 is a perspective view showing a state in which an external magnetic field is applied to the second magnetoresistive element of the magnetic sensor according to Embodiment 1 of the present invention.
　図４，５に示すように、電源端子Ｖｃｃから入力された電流Ｉが、第１磁気抵抗素子Ｒ１，Ｒ３および第２磁気抵抗素子Ｒ２，Ｒ４の各々を構成する磁性体膜１２０を流れる。外部磁界は、Ｘ軸方向およびＹ軸方向の磁界成分Ｂｐと、Ｚ軸方向の磁界成分Ｂｚとからなる。磁界成分Ｂｐは、第１磁気抵抗素子Ｒ１，Ｒ３を構成する磁性体膜１２０の長手部に対して略垂直な方向に進行し、第２磁気抵抗素子Ｒ２，Ｒ４を構成する磁性体膜１２０の長手部に対して略平行な方向に進行する。 As shown in FIGS. 4 and 5, the current I input from the power supply terminal Vcc flows through the magnetic film 120 constituting each of the first magnetoresistive elements R1 and R3 and the second magnetoresistive elements R2 and R4. The external magnetic field includes a magnetic field component Bp in the X-axis direction and the Y-axis direction and a magnetic field component Bz in the Z-axis direction. The magnetic field component Bp travels in a direction substantially perpendicular to the longitudinal portion of the magnetic film 120 constituting the first magnetoresistive elements R1 and R3, and the magnetic field component Bp of the magnetic film 120 constituting the second magnetoresistive elements R2 and R4. It proceeds in a direction substantially parallel to the longitudinal portion.
　そのため、外部磁界が印加されることによって、第１磁気抵抗素子Ｒ１，Ｒ３を構成する磁性体膜１２０において、上面１１１上および底面１１４上に設けられている部分の電気抵抗値が大きく低下する。一方、第２磁気抵抗素子Ｒ２，Ｒ４を構成する磁性体膜１２０の電気抵抗値は、ほとんど低下しない。 Therefore, when an external magnetic field is applied, in the magnetic film 120 constituting the first magnetoresistive elements R1 and R3, the electrical resistance values of the portions provided on the top surface 111 and the bottom surface 114 are greatly reduced. On the other hand, the electric resistance value of the magnetic film 120 constituting the second magnetoresistive elements R2 and R4 hardly decreases.
　磁界成分Ｂｚは、第１磁気抵抗素子Ｒ１，Ｒ３を構成する磁性体膜１２０の長手部に対して略垂直な方向に進行する。そのため、外部磁界が印加されることによって、第１磁気抵抗素子Ｒ１，Ｒ３を構成する磁性体膜１２０において、側面１１３上に設けられている部分の電気抵抗値が大きく低下する。一方、第２磁気抵抗素子Ｒ２，Ｒ４は、Ｚ軸方向の磁界成分Ｂｚを検出しない。 The magnetic field component Bz travels in a direction substantially perpendicular to the longitudinal portion of the magnetic film 120 constituting the first magnetoresistive elements R1 and R3. Therefore, when an external magnetic field is applied, the electric resistance value of the portion provided on the side surface 113 in the magnetic film 120 constituting the first magnetoresistive elements R1 and R3 is greatly reduced. On the other hand, the second magnetoresistive elements R2 and R4 do not detect the magnetic field component Bz in the Z-axis direction.
　上記のように、第１磁気抵抗素子Ｒ１，Ｒ３は、Ｘ軸方向およびＹ軸方向の磁界成分Ｂｐ、および、Ｚ軸方向の磁界成分Ｂｚの両方を検出することができる。すなわち、３次元方向の磁界を１つの第１磁気抵抗素子で検出することができる。なお、外部磁界の入射方向がどのような方向であっても、第１磁気抵抗素子Ｒ１，Ｒ３の電気抵抗値が変動して、電流Ｉが第１磁気抵抗素子Ｒ１，Ｒ３の電気抵抗値の低下した箇所を優先的に流れるため、第１磁気抵抗素子Ｒ１，Ｒ３は、３次元方向に感度を有することになる。 As described above, the first magnetoresistive elements R1 and R3 can detect both the magnetic field component Bp in the X-axis direction and the Y-axis direction and the magnetic field component Bz in the Z-axis direction. That is, a magnetic field in a three-dimensional direction can be detected by one first magnetoresistive element. Note that, regardless of the incident direction of the external magnetic field, the electric resistance values of the first magnetoresistive elements R1 and R3 fluctuate, and the current I is the electric resistance value of the first magnetoresistive elements R1 and R3. The first magnetoresistive elements R1 and R3 have sensitivity in the three-dimensional direction because they flow preferentially through the lowered portion.
　図６は、本発明の実施形態１に係る磁気センサの等価回路図である。図６に示すように、本発明の実施形態１に係る磁気センサ１００においては、第１磁気抵抗素子Ｒ１は、Ｘ軸方向およびＹ軸方向の磁界成分を検出する可変抵抗部Ｒ１Ｐと、Ｚ軸方向の磁界成分を検出する可変抵抗部Ｒ１Ｖとを有している。可変抵抗部Ｒ１Ｐと可変抵抗部Ｒ１Ｖとは、第１中点Ｖｏｕｔ１と接地端子Ｇｎｄとの間において、並列に接続されている。 FIG. 6 is an equivalent circuit diagram of the magnetic sensor according to the first embodiment of the present invention. As shown in FIG. 6, in the magnetic sensor 100 according to the first embodiment of the present invention, the first magnetoresistive element R1 includes a variable resistor R1P that detects magnetic field components in the X-axis direction and the Y-axis direction, and a Z-axis. And a variable resistance portion R1V that detects a magnetic field component in the direction. The variable resistor portion R1P and the variable resistor portion R1V are connected in parallel between the first middle point Vout1 and the ground terminal Gnd.
　第１磁気抵抗素子Ｒ３は、Ｘ軸方向およびＹ軸方向の磁界成分を検出する可変抵抗部Ｒ３Ｐと、Ｚ軸方向の磁界成分を検出する可変抵抗部Ｒ３Ｖとを有している。可変抵抗部Ｒ３Ｐと可変抵抗部Ｒ３Ｖとは、電源端子Ｖｃｃと第２中点Ｖｏｕｔ２との間において、並列に接続されている。 The first magnetoresistive element R3 includes a variable resistor R3P that detects magnetic field components in the X-axis direction and the Y-axis direction, and a variable resistor R3V that detects magnetic field components in the Z-axis direction. The variable resistor portion R3P and the variable resistor portion R3V are connected in parallel between the power supply terminal Vcc and the second middle point Vout2.
　磁気センサ１００が上記の回路構成を有することにより、第１中点Ｖｏｕｔ１と第２中点Ｖｏｕｔ２との間に、外部磁界の強さに依存する電位差が発生する。 When the magnetic sensor 100 has the above circuit configuration, a potential difference depending on the strength of the external magnetic field is generated between the first middle point Vout1 and the second middle point Vout2.
　以下、本発明の実施形態１に係る磁気センサの製造方法について説明する。図７は、基板上にフォトレジストを形成した状態を示す部分断面図である。図７に示すように、基板１１０の上面１１１上に、フォトレジスト１０を形成する。フォトレジスト１０には、溝部１１２の形成位置に対応する部分に開口部が設けられている。フォトレジスト１０は、ネガ型およびポジ型のいずれでもよい。なお、フォトレジスト１０の代わりに、たとえば窒化シリコン、炭窒化シリコンまたは金属などからなるハードマスクを基板１１０の上面１１１上に形成してもよい。 Hereinafter, a method for manufacturing the magnetic sensor according to the first embodiment of the present invention will be described. FIG. 7 is a partial cross-sectional view showing a state in which a photoresist is formed on a substrate. As shown in FIG. 7, a photoresist 10 is formed on the upper surface 111 of the substrate 110. The photoresist 10 is provided with an opening at a portion corresponding to the position where the groove 112 is formed. The photoresist 10 may be either a negative type or a positive type. Instead of the photoresist 10, a hard mask made of, for example, silicon nitride, silicon carbonitride, or metal may be formed on the upper surface 111 of the substrate 110.
　図８は、エッチングにより基板に溝部を形成した状態を示す部分断面図である。フォトレジスト１０が設けられた基板１１０をエッチングした後、フォトレジスト１０を除去することにより、図８に示すように、基板１１０に溝部１１２が設けられる。その結果、溝部１１２の内表面である、側面１１３と底面１１４とが露出する。エッチング方法は、異方性エッチングが可能な方法であればよく、ドライエッチングおよびウエットエッチングのいずれでもよい。なお、溝部１１２の形成方法は、エッチングに限られず、切削加工またはレーザースクライブなどを用いてもよい。 FIG. 8 is a partial cross-sectional view showing a state in which a groove is formed in the substrate by etching. After the substrate 110 provided with the photoresist 10 is etched, the photoresist 10 is removed, so that a groove 112 is provided in the substrate 110 as shown in FIG. As a result, the side surface 113 and the bottom surface 114 which are the inner surfaces of the groove 112 are exposed. The etching method may be any method that allows anisotropic etching, and may be either dry etching or wet etching. The method for forming the groove 112 is not limited to etching, and cutting or laser scribing may be used.
　図９は、基板上に磁性体膜を形成した状態を示す部分断面図である。図９に示すように、溝部１１２が設けられた基板１１０上に、磁性体膜１２０を成膜する。溝部１１２の内表面を磁性体膜１２０で均一に覆う方法としては、ＬＳＩ(large　scale　integration)を製造する際に使用される銅配線技術、または、ＴＳＶ(through　silicon　via)技術などを適用することができる。成膜方法としては、スパッタリングまたは蒸着などを用いることができる。 FIG. 9 is a partial cross-sectional view showing a state where a magnetic film is formed on a substrate. As shown in FIG. 9, the magnetic film 120 is formed on the substrate 110 provided with the groove 112. As a method of uniformly covering the inner surface of the groove 112 with the magnetic film 120, a copper wiring technique used in manufacturing LSI (large scale integration) or a TSV (through silicon via) technique is applied. Can do. As a film forming method, sputtering, vapor deposition, or the like can be used.
　図１０は、磁性体膜が成膜された基板上にフォトレジストを形成した状態を示す部分断面図である。図１０に示すように、第１磁気抵抗素子および第２磁気抵抗素子の各々のパターン形状に対応するように、フォトレジスト１１が設けられる。溝部１１２は、フォトレジスト１１に覆われている。フォトレジスト１１は、ネガ型およびポジ型のいずれでもよい。 FIG. 10 is a partial cross-sectional view showing a state in which a photoresist is formed on a substrate on which a magnetic film is formed. As shown in FIG. 10, a photoresist 11 is provided so as to correspond to each pattern shape of the first magnetoresistive element and the second magnetoresistive element. The groove portion 112 is covered with the photoresist 11. The photoresist 11 may be either a negative type or a positive type.
　図１１は、エッチングにより不要な磁性体膜を除去した状態を示す部分断面図である。図１１に示すように、磁性体膜１２０をパターニングしてフォトレジスト１１を除去することにより、第１磁気抵抗素子Ｒ１，Ｒ３、および、第２磁気抵抗素子Ｒ２，Ｒ４が形成される。 FIG. 11 is a partial cross-sectional view showing a state where an unnecessary magnetic film is removed by etching. As shown in FIG. 11, by patterning the magnetic film 120 and removing the photoresist 11, the first magnetoresistive elements R1, R3 and the second magnetoresistive elements R2, R4 are formed.
　本発明の実施形態１に係る磁気センサ１００は、第１磁気抵抗素子Ｒ１，Ｒ３によって、３次元方向の磁界を検出することができ、また、第１磁気抵抗素子Ｒ１，Ｒ３および第２磁気抵抗素子Ｒ２，Ｒ４の各々のパターン形状は、従来の２次元方向の磁界を検出する磁気抵抗素子のパターン形状と同様であり、簡易な構成を有する。 The magnetic sensor 100 according to Embodiment 1 of the present invention can detect a magnetic field in a three-dimensional direction by the first magnetoresistive elements R1 and R3, and the first magnetoresistive elements R1 and R3 and the second magnetoresistive elements. The pattern shape of each of the elements R2 and R4 is the same as the pattern shape of a magnetoresistive element that detects a magnetic field in a conventional two-dimensional direction, and has a simple configuration.
　さらに、上記のように、本実施形態に係る磁気センサにおいて、ブリッジ回路を構成する抵抗は全て磁気抵抗素子である。このため、全ての抵抗を同じ材料で形成することができる。さらに、全ての抵抗を同じ製造工程で製造することができる。 Furthermore, as described above, in the magnetic sensor according to the present embodiment, all the resistors constituting the bridge circuit are magnetoresistive elements. For this reason, all the resistors can be formed of the same material. Furthermore, all resistors can be manufactured in the same manufacturing process.
　なお、溝部１１２の幅および深さを適宜調整することにより、Ｚ軸方向の磁界成分の検出感度を変更することができる。また、溝部１１２の内表面の形状を適宜整することにより、Ｚ軸方向の磁界成分の検出感度を変更することができる。 Note that the detection sensitivity of the magnetic field component in the Z-axis direction can be changed by appropriately adjusting the width and depth of the groove 112. Moreover, the detection sensitivity of the magnetic field component in the Z-axis direction can be changed by appropriately adjusting the shape of the inner surface of the groove 112.
　図１２は、本発明の実施形態１に係る磁気センサの第１変形例に係る第１磁気抵抗素子の構成を示す部分断面図である。図１３は、本発明の実施形態１に係る磁気センサの第２変形例に係る第１磁気抵抗素子の構成を示す部分断面図である。 FIG. 12 is a partial cross-sectional view showing a configuration of a first magnetoresistive element according to a first modification of the magnetic sensor according to the first embodiment of the present invention. FIG. 13 is a partial cross-sectional view showing the configuration of the first magnetoresistance element according to the second modification example of the magnetic sensor according to the first embodiment of the present invention.
　図１２に示すように、本発明の実施形態１に係る磁気センサの第１変形例においては、溝部１１２ａの内表面は、上面１１１を含む仮想平面に垂直な側面１１３と、上面１１１を含む仮想平面に平行な底面１１４と、上面１１１を含む仮想平面に交差する方向に延在して側面１１３と底面１１４とを繋ぐ傾斜面１１５とから構成されている。 As shown in FIG. 12, in the first modification of the magnetic sensor according to the first embodiment of the present invention, the inner surface of the groove 112 a has a side surface 113 perpendicular to a virtual plane including the upper surface 111 and a virtual surface including the upper surface 111. A bottom surface 114 parallel to the plane and an inclined surface 115 extending in a direction intersecting with a virtual plane including the upper surface 111 and connecting the side surface 113 and the bottom surface 114 are formed.
　本発明の実施形態１に係る磁気センサの第１変形例においては、図１２中の矢印で示すように、Ｚ軸方向に交差する方向に外部磁界Ｂが印加された場合に、傾斜面１１５上に位置する部分の磁性体膜１２０によって外部磁界Ｂを効果的に検出することができる。 In the first modification of the magnetic sensor according to the first embodiment of the present invention, as shown by an arrow in FIG. 12, when an external magnetic field B is applied in a direction crossing the Z-axis direction, The external magnetic field B can be effectively detected by the portion of the magnetic film 120 located in the region.
　図１３に示すように、本発明の実施形態１に係る磁気センサの第２変形例においては、溝部１１２ｂの内表面は、上面１１１を含む仮想平面に垂直な側面１１３と、湾曲した底面１１６とから構成されている。 As shown in FIG. 13, in the second modification of the magnetic sensor according to the first embodiment of the present invention, the inner surface of the groove 112b includes a side surface 113 perpendicular to a virtual plane including the upper surface 111, and a curved bottom surface 116. It is composed of
　本発明の実施形態１に係る磁気センサの第２変形例においては、図１３中の矢印で示すように、Ｚ軸方向に交差する方向に外部磁界Ｂが印加された場合に、底面１１６上に位置する部分の磁性体膜１２０によって外部磁界Ｂを効果的に検出することができる。底面１１６が円弧状に湾曲していることにより、外部磁界Ｂの印加方向とＺ軸方向との交差角度によらず、外部磁界Ｂを効果的に検出することができる。 In the second modification of the magnetic sensor according to the first embodiment of the present invention, as shown by an arrow in FIG. 13, when an external magnetic field B is applied in a direction crossing the Z-axis direction, The external magnetic field B can be effectively detected by the portion of the magnetic film 120 that is positioned. Since the bottom surface 116 is curved in an arc shape, the external magnetic field B can be effectively detected regardless of the intersection angle between the application direction of the external magnetic field B and the Z-axis direction.
　本実施形態においては、磁気センサ１００は、ホイートストンブリッジ型のフルブリッジ回路を含んでいたが、これに限られず、ハーフブリッジ回路を含んでいてもよい。図１４は、本発明の実施形態１に係る磁気センサの第３変形例に係る磁気センサの等価回路図である。 In the present embodiment, the magnetic sensor 100 includes a Wheatstone bridge type full-bridge circuit, but is not limited thereto, and may include a half-bridge circuit. FIG. 14 is an equivalent circuit diagram of a magnetic sensor according to a third modification of the magnetic sensor according to Embodiment 1 of the present invention.
　図１４に示すように、本発明の実施形態１に係る磁気センサの第３変形例に係る磁気センサ１００ａにおいては、電源端子Ｖｃｃと接地端子Ｇｎｄとの間において、第１磁気抵抗素子Ｒ１と第２磁気抵抗素子Ｒ２とが直列に接続されている。第１磁気抵抗素子Ｒ１と第２磁気抵抗素子Ｒ２との間に、第１中点Ｖｏｕｔ１が接続されている。第１中点Ｖｏｕｔ１と接地端子Ｇｎｄとの間の電位差の変化に基づいて、外部磁界を検出することができる。 As shown in FIG. 14, in the magnetic sensor 100a according to the third modification of the magnetic sensor according to the first embodiment of the present invention, the first magnetoresistive element R1 and the first magnetoresistive element R1 are connected between the power supply terminal Vcc and the ground terminal Gnd. Two magnetoresistive elements R2 are connected in series. A first middle point Vout1 is connected between the first magnetoresistive element R1 and the second magnetoresistive element R2. An external magnetic field can be detected based on a change in potential difference between the first middle point Vout1 and the ground terminal Gnd.
　(実施形態２)
　以下、本発明の実施形態２に係る磁気センサについて図を参照して説明する。なお、本発明の実施形態２に係る磁気センサは、第１磁気抵抗素子のパターン形状のみ、本発明の実施形態１に係る磁気センサ１００と異なるため、本発明の実施形態１に係る磁気センサ１００と同様である構成については説明を繰り返さない。 (Embodiment 2)
Hereinafter, a magnetic sensor according to Embodiment 2 of the present invention will be described with reference to the drawings. The magnetic sensor according to the second embodiment of the present invention is different from the magnetic sensor 100 according to the first embodiment of the present invention only in the pattern shape of the first magnetoresistive element, and therefore the magnetic sensor 100 according to the first embodiment of the present invention. The description of the same configuration as in FIG.
　図１５は、本発明の実施形態２に係る磁気センサの第１磁気抵抗素子のパターン形状を示す平面図である。図１５に示すように、第１磁気抵抗素子Ｒ１，Ｒ３は、基板１１０の上面１１１に直交する方向から見て、２重渦巻き状のパターン形状に設けられた磁性体膜１２０で構成されている。２重渦巻き状のパターンは、一方の渦巻き状パターン、他方の渦巻き状パターン、および、一方の渦巻き状パターンと他方の渦巻き状パターンとを２重渦巻き状パターンの中央部にて連結するＳ字状パターンを含む。なお、２重渦巻き状パターンは逆方向に巻いていてもよく、この場合、２重渦巻き状パターンの中央部が逆Ｓ字状パターンで構成される。 FIG. 15 is a plan view showing the pattern shape of the first magnetoresistive element of the magnetic sensor according to the second embodiment of the present invention. As shown in FIG. 15, the first magnetoresistive elements R <b> 1 and R <b> 3 are configured by a magnetic film 120 provided in a double spiral pattern when viewed from a direction orthogonal to the upper surface 111 of the substrate 110. . The double spiral pattern includes one spiral pattern, the other spiral pattern, and an S-shape that connects one spiral pattern and the other spiral pattern at the center of the double spiral pattern. Includes patterns. Note that the double spiral pattern may be wound in the opposite direction, and in this case, the central portion of the double spiral pattern is constituted by an inverted S-shaped pattern.
　２重渦巻き状パターンは、主に略円弧状の湾曲部が巻き回されて構成されている。円弧は、多角形の角の数が無限大に大きくなった際の近似形であるため、２重渦巻き状パターンを流れる電流の向きは、水平方向の略全方位(３６０°)に亘っている。よって、第１磁気抵抗素子Ｒ１，Ｒ３は、水平方向の略全方位(３６０°)に亘って、外部磁界を検出することができる。また、第１磁気抵抗素子Ｒ１，Ｒ３の各々は、直線状延在部を含んでいないため、磁界検出の異方性が低減されている。 The double spiral pattern is mainly configured by winding a substantially arc-shaped curved portion. Since the arc is an approximate shape when the number of corners of the polygon becomes infinitely large, the direction of the current flowing through the double spiral pattern extends over almost all directions (360 °) in the horizontal direction. . Therefore, the first magnetoresistive elements R1 and R3 can detect the external magnetic field over substantially the entire horizontal direction (360 °). In addition, since each of the first magnetoresistive elements R1 and R3 does not include a linear extending portion, anisotropy of magnetic field detection is reduced.
　なお、第１磁気抵抗素子Ｒ１，Ｒ３が、基板１１０の上面１１１に直交する方向から見て、円環状のパターン形状に設けられた磁性体膜１２０で構成されていてもよい。この場合、磁性体膜１２０は、円環状の周方向の全周に亘って設けられている。円環状は、円形に限られず、楕円形であってもよい。 Note that the first magnetoresistive elements R1 and R3 may be configured by the magnetic film 120 provided in an annular pattern shape when viewed from the direction orthogonal to the upper surface 111 of the substrate 110. In this case, the magnetic film 120 is provided over the entire circumference in the annular circumferential direction. The annular shape is not limited to a circle but may be an ellipse.
　また、溝部１１２は、第１磁気抵抗素子Ｒ１，Ｒ３のパターン形状の全体に亘って形成されていなくてもよいが、パターン形状の周方向の全周に亘って設けられていることが、磁界検出の異方性を低減する観点から好ましい。 In addition, the groove 112 may not be formed over the entire pattern shape of the first magnetoresistive elements R1 and R3. However, the groove 112 may be provided over the entire circumference in the circumferential direction of the pattern shape. This is preferable from the viewpoint of reducing detection anisotropy.
　(実施形態３)
　以下、本発明の実施形態３に係る磁気センサについて図を参照して説明する。なお、本発明の実施形態３に係る磁気センサは、第１磁気抵抗素子および第２磁気抵抗素子のパターン形状のみ、本発明の実施形態１に係る磁気センサ１００と異なるため、本発明の実施形態１に係る磁気センサ１００と同様である構成については説明を繰り返さない。 (Embodiment 3)
Hereinafter, a magnetic sensor according to Embodiment 3 of the present invention will be described with reference to the drawings. The magnetic sensor according to the third embodiment of the present invention differs from the magnetic sensor 100 according to the first embodiment of the present invention only in the pattern shape of the first magnetoresistive element and the second magnetoresistive element. The description of the same configuration as that of the magnetic sensor 100 according to 1 will not be repeated.
　図１６は、本発明の実施形態３に係る磁気センサの構成を示す平面図である。図１６に示すように、本発明の実施形態３に係る磁気センサ３００においては、第１磁気抵抗素子Ｒ１，Ｒ３は、基板１１０の上面１１１に直交する方向から見て、２重渦巻き状のパターン形状に設けられた磁性体膜１２０で構成されている。第２磁気抵抗素子Ｒ２，Ｒ４は、基板１１０の上面１１１に直交する方向から見て、ミアンダ状のパターン形状に設けられた磁性体膜１２０で構成されている。第２磁気抵抗素子Ｒ２，Ｒ４を構成する磁性体膜１２０の長手部は、ジグザグに形成されている。第２磁気抵抗素子Ｒ２，Ｒ４を構成する磁性体膜１２０の長手部において直線状に延在している部分の長さは、１０μｍ以下である。 FIG. 16 is a plan view showing the configuration of the magnetic sensor according to the third embodiment of the present invention. As shown in FIG. 16, in the magnetic sensor 300 according to Embodiment 3 of the present invention, the first magnetoresistive elements R <b> 1 and R <b> 3 are double spiral patterns when viewed from the direction orthogonal to the upper surface 111 of the substrate 110. The magnetic film 120 is provided in a shape. The second magnetoresistive elements R2 and R4 are configured by a magnetic film 120 provided in a meandering pattern shape when viewed from a direction orthogonal to the upper surface 111 of the substrate 110. The longitudinal portion of the magnetic film 120 constituting the second magnetoresistive elements R2 and R4 is formed in a zigzag manner. The length of the linearly extending portion of the magnetic film 120 constituting the second magnetoresistive elements R2 and R4 is 10 μm or less.
　磁性体膜１２０の直線状に延在している部分の長さが短くなるに従って、磁気抵抗素子の抵抗変化率は低下する。磁性体膜１２０の直線状に延在している部分の長さが１０μｍである第２磁気抵抗素子Ｒ２，Ｒ４の抵抗変化率は０．５％未満である。そのため、第２磁気抵抗素子Ｒ２，Ｒ４は、外部磁界が印加されても電気抵抗値がほとんど変化しない。 The resistance change rate of the magnetoresistive element decreases as the length of the linearly extending portion of the magnetic film 120 becomes shorter. The resistance change rate of the second magnetoresistive elements R2 and R4 in which the length of the linearly extending portion of the magnetic film 120 is 10 μm is less than 0.5%. Therefore, the second magnetoresistive elements R2 and R4 hardly change in electric resistance value even when an external magnetic field is applied.
　上記のように、本実施形態に係る磁気センサ３００においては、第２磁気抵抗素子Ｒ２，Ｒ４の抵抗変化率が、第１磁気抵抗素子Ｒ１，Ｒ３の抵抗変化率より小さい。すなわち、第１磁気抵抗素子Ｒ１，Ｒ３は、外部磁界が印加されることによって電気抵抗値が変化するいわゆる感磁抵抗である。第２磁気抵抗素子Ｒ２，Ｒ４は、外部磁界が印加されてもほとんど電気抵抗値が変化しない固定抵抗である。 As described above, in the magnetic sensor 300 according to the present embodiment, the resistance change rates of the second magnetoresistive elements R2 and R4 are smaller than the resistance change rates of the first magnetoresistive elements R1 and R3. That is, the first magnetoresistive elements R1 and R3 are so-called magnetosensitive resistors whose electric resistance values change when an external magnetic field is applied. The second magnetoresistive elements R2 and R4 are fixed resistors whose electric resistance values hardly change even when an external magnetic field is applied.
　第２磁気抵抗素子Ｒ２，Ｒ４を固定抵抗とすることにより、外部磁界に対する磁気センサ３００の配置の自由度を高めることができる。 By using the second magnetoresistive elements R2 and R4 as fixed resistors, the degree of freedom of arrangement of the magnetic sensor 300 with respect to an external magnetic field can be increased.
　上述した実施形態の説明において、組み合わせ可能な構成を相互に組み合わせてもよい。 In the description of the embodiment described above, configurations that can be combined may be combined with each other.
　今回開示された実施形態はすべての点で例示であって制限的なものではないと考えられるべきである。本発明の範囲は上記した説明ではなくて請求の範囲によって示され、請求の範囲と均等の意味および範囲内でのすべての変更が含まれることが意図される。 The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.
　１０，１１　フォトレジスト、１００，１００ａ，３００　磁気センサ、１１０　基板、１１１　上面、１１２，１１２ａ，１１２ｂ　溝部、１１３　側面、１１４，１１６　底面、１１５　傾斜面、１２０　磁性体膜、Ｂ　外部磁界、Ｂｐ，Ｂｚ　磁界成分、Ｇｎｄ　接地端子、Ｉ　電流、Ｒ１，Ｒ３　第１磁気抵抗素子、Ｒ１Ｐ，Ｒ１Ｖ，Ｒ３Ｖ，Ｒ３Ｐ　可変抵抗部、Ｒ２，Ｒ４　第２磁気抵抗素子、Ｖｃｃ　電源端子、Ｖｏｕｔ１　第１中点、Ｖｏｕｔ２　第２中点。 10, 11 photoresist, 100, 100a, 300 magnetic sensor, 110 substrate, 111 top surface, 112, 112a, 112b groove, 113 side surface, 114, 116 bottom surface, 115 inclined surface, 120 magnetic film, B external magnetic field, Bp, Bz magnetic field component, Gnd ground terminal, I current, R1, R3 first magnetoresistive element, R1P, R1V, R3V, R3P variable resistance part, R2, R4 second magnetoresistive element, Vcc power supply terminal, Vout1 first midpoint, Vout2 2nd midpoint.

Claims (8)

  1. 　上面を有し、該上面に繋がった内表面を有する溝部が設けられた基板と、
    　前記基板に設けられ、互いに接続されてブリッジ回路を構成する第１磁気抵抗素子および第２磁気抵抗素子とを備え、
    　前記第１磁気抵抗素子は、前記上面の一部および前記内表面を連続して覆う磁性体膜で構成されており、
    　前記第２磁気抵抗素子は、前記上面の他の一部を覆う磁性体膜で構成されている、磁気センサ。     A substrate having an upper surface and provided with a groove having an inner surface connected to the upper surface;
    A first magnetoresistive element and a second magnetoresistive element provided on the substrate and connected to each other to form a bridge circuit;
    The first magnetoresistive element is composed of a magnetic film that continuously covers a part of the upper surface and the inner surface,
    The second magnetoresistive element is a magnetic sensor configured of a magnetic film that covers another part of the upper surface.
  2. 　前記内表面が、前記上面を含む仮想平面に垂直な側面を含む、請求項１に記載の磁気センサ。 The magnetic sensor according to claim 1, wherein the inner surface includes a side surface perpendicular to a virtual plane including the upper surface.
  3. 　前記内表面が、前記上面を含む仮想平面に平行な底面を含む、請求項１または請求項２に記載の磁気センサ。 The magnetic sensor according to claim 1 or 2, wherein the inner surface includes a bottom surface parallel to a virtual plane including the upper surface.
  4. 　前記内表面が、湾曲した底面を含む、請求項１または請求項２に記載の磁気センサ。 The magnetic sensor according to claim 1 or 2, wherein the inner surface includes a curved bottom surface.
  5. 　前記第１磁気抵抗素子を構成する前記磁性体膜と、前記第２磁気抵抗素子を構成する前記磁性体膜とが、同一の材料で構成されている、請求項１から請求項４のいずれか１項に記載の磁気センサ。 The said magnetic body film which comprises the said 1st magnetoresistive element, and the said magnetic body film which comprises the said 2nd magnetoresistive element are comprised by the same material, The any one of Claims 1-4 The magnetic sensor according to item 1.
  6. 　前記第１磁気抵抗素子が、前記上面に直交する方向から見て、円環状または渦巻状に設けられている、請求項１から請求項５のいずれか１項に記載の磁気センサ。 The magnetic sensor according to any one of claims 1 to 5, wherein the first magnetoresistive element is provided in an annular shape or a spiral shape when viewed from a direction orthogonal to the upper surface.
  7. 　前記第２磁気抵抗素子が、前記上面に直交する方向から見て、ミアンダ状に設けられている、請求項１から請求項６のいずれか１項に記載の磁気センサ。 The magnetic sensor according to any one of claims 1 to 6, wherein the second magnetoresistive element is provided in a meander shape when viewed from a direction orthogonal to the upper surface.
  8. 　前記第１磁気抵抗素子を２つ含み、
    　前記第２磁気抵抗素子を２つ含み、
    　２つの前記第１磁気抵抗素子と２つの前記第２磁気抵抗素子とが、互いに接続されてフルブリッジ回路を構成している、請求項１から請求項７のいずれか１項に記載の磁気センサ。     Including two first magnetoresistive elements;
    Including two of the second magnetoresistive elements;
    The magnetic sensor according to any one of claims 1 to 7, wherein the two first magnetoresistive elements and the two second magnetoresistive elements are connected to each other to form a full bridge circuit. .
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