WO2019111782A1 - Magnetic sensor - Google Patents

Magnetic sensor Download PDF

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Publication number
WO2019111782A1
WO2019111782A1 PCT/JP2018/043774 JP2018043774W WO2019111782A1 WO 2019111782 A1 WO2019111782 A1 WO 2019111782A1 JP 2018043774 W JP2018043774 W JP 2018043774W WO 2019111782 A1 WO2019111782 A1 WO 2019111782A1
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Prior art keywords
insulating layer
magnetic
viewed
magnetic member
direction orthogonal
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PCT/JP2018/043774
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French (fr)
Japanese (ja)
Inventor
智彦 中川
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株式会社村田製作所
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Publication of WO2019111782A1 publication Critical patent/WO2019111782A1/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Definitions

  • the present invention relates to a magnetic sensor, and more particularly to a magnetic sensor including a magnetoresistive element.
  • Patent Document 1 Japanese Patent Application Laid-Open No. 2013-44641
  • Patent Document 2 International Publication No. 2015/182365
  • Patent Document 3 International Publication No. 2016/013345
  • Patent Document 4 JP-A-2017-166925
  • Patent Document 6 JP-A-2016-173317
  • the magnetic sensors described in Patent Document 1 are connected to each other to form a bridge circuit, and each of a first magnetoresistive element, a second magnetoresistive element, a third magnetoresistive element, and a fourth magnetic element formed in a meander shape.
  • a resistive element is provided.
  • the surfaces of the first magnetoresistive element, the second magnetoresistive element, the third magnetoresistive element, and the fourth magnetoresistive element are covered with an insulating film.
  • a magnetic flux collecting film made of a magnetic material is formed on the surfaces of the third magnetoresistive element and the fourth magnetoresistive element, which are so-called fixed resistors, with an insulating film interposed therebetween.
  • the magnetic sensor described in Patent Document 2 and Patent Document 3 includes a first magnetoresistive element and a second magnetoresistive element having a smaller rate of change in resistance than the first magnetoresistive element.
  • the first magnetoresistance element which is a so-called magnetosensitive element, includes a pattern arranged concentrically.
  • the magnetic sensor described in Patent Document 4 includes a semiconductor substrate provided with a plurality of Hall elements, and a magnetic body having a magnetic amplification function provided on the semiconductor substrate.
  • An underlayer serving as an underlayer of a magnetic substance is provided on a semiconductor substrate.
  • the underlayer has a coefficient of thermal expansion different from that of the plurality of Hall elements.
  • the underlayer has an area that at least partially covers the areas of the plurality of Hall elements.
  • the magnetic body has an area larger than the area of the underlayer.
  • the magnetic sensor described in Patent Document 5 includes a semiconductor substrate provided with a plurality of Hall elements, and a magnetic body having a magnetic focusing function provided on the semiconductor substrate.
  • the outer peripheral portion defining the outer cross-sectional shape of the magnetic body on the semiconductor substrate has a portion having a curved shape in at least a part of the outer peripheral portion and a portion substantially parallel to the semiconductor substrate. At least a portion of the nonmagnetic substance is embedded inside the magnetic body.
  • the magnetic sensor described in Patent Document 6 includes a Hall element provided on a semiconductor substrate, and a magnetic body having a magnetic amplification function provided on the semiconductor substrate and at least partially covering each of the Hall elements. Equipped with The magnetic body is provided with a slit or a slot.
  • each of the first magnetoresistance element and the second magnetoresistance element which are so-called magnetosensitive elements, includes a meander-like pattern, and therefore, the isotropy of detection of the horizontal magnetic field Is low.
  • the first magnetoresistive element since the first magnetoresistive element includes a pattern in which the first magnetoresistive elements are arranged concentrically, the isotropic property of detection of the horizontal magnetic field is high, but the weak vertical It can not detect the magnetic field.
  • Patent Document 4 The magnetic sensors described in Patent Document 4, Patent Document 5 and Patent Document 6 are magnetic sensors provided with Hall elements, and it is not considered to detect a horizontal magnetic field and a vertical magnetic field using a magnetoresistive element.
  • the present invention has been made in view of the above problems, and a magnetoresistance element is used to achieve high isotropy of detection of a horizontal magnetic field and to detect a weak vertical magnetic field, and a magnetoresistance element. It is an object of the present invention to provide a magnetic sensor capable of suppressing a decrease in output accuracy due to a stress acting on a magnetoresistive element from a structure provided above.
  • a magnetic sensor includes a first magnetoresistance element, a second magnetoresistance element electrically connected to the first magnetoresistance element to form a bridge circuit, a first magnetoresistance element, and a first magnetoresistance element.
  • at least the first magnetic member among the second magnetic members different from the first magnetic member is provided to cover the second conductor portion.
  • the first magnetoresistive element has at least the outer periphery of the outer periphery and the inner periphery.
  • the first magnetic member is located in an area inside the outer peripheral edge of the first magnetoresistive element as viewed in the direction orthogonal to the insulating layer.
  • the second magnetoresistive element is located in a region inside the inner peripheral edge of the first magnetoresistive element and viewed from the direction perpendicular to the insulating layer, and is covered with the first magnetic member or the first magnetoresistive element
  • the second magnetic member is located in a region outside the outer peripheral edge of the element.
  • the first conductor portion is provided with a through groove or a through hole penetrating in a direction orthogonal to the insulating layer.
  • the first magnetic member is located along the through groove or the through hole when viewed in the direction orthogonal to the insulating layer.
  • the through hole is provided at the center of the first conductor portion when viewed in the direction orthogonal to the insulating layer.
  • the through holes are provided in a circular shape when viewed in the direction orthogonal to the insulating layer.
  • the through groove when viewed in the direction orthogonal to the insulating layer, passes through the center of the first conductor portion.
  • the through groove extends in a straight line when viewed in the direction orthogonal to the insulating layer.
  • the first conductor portion is further provided with another penetration groove penetrating in the direction orthogonal to the insulating layer.
  • the other through groove intersects the center of the first groove with the through hole when viewed in the direction perpendicular to the insulating layer.
  • the other through grooves extend in a straight line when viewed in the direction orthogonal to the insulating layer.
  • a magnetic sensor includes a first magnetoresistance element, a second magnetoresistance element electrically connected to the first magnetoresistance element to form a bridge circuit, a first magnetoresistance element, and a first magnetoresistance element.
  • the first magnetoresistive element has at least the outer periphery of the outer periphery and the inner periphery.
  • the first magnetic member is located in an area inside the outer peripheral edge of the first magnetoresistive element as viewed in the direction orthogonal to the insulating layer.
  • the second magnetoresistive element is located in a region inside the inner peripheral edge of the first magnetoresistive element and viewed from the direction perpendicular to the insulating layer, and is covered with the first magnetic member or the first magnetoresistive element
  • the second magnetic member is located in a region outside the outer peripheral edge of the element.
  • the first magnetic member is provided with a through groove or a through hole penetrating in a direction orthogonal to the insulating layer.
  • the through hole is provided at the center of the first magnetic member as viewed in the direction orthogonal to the insulating layer.
  • the through holes are provided in a circular shape when viewed in the direction orthogonal to the insulating layer.
  • the through groove when viewed in the direction orthogonal to the insulating layer, passes through the center of the first magnetic member.
  • the through groove extends in a straight line when viewed in the direction orthogonal to the insulating layer.
  • another through groove is further provided in the first magnetic member in a direction perpendicular to the insulating layer.
  • the other through groove intersects the center of the first magnetic member with the through groove when viewed in the direction orthogonal to the insulating layer.
  • the other through grooves extend in a straight line when viewed in the direction orthogonal to the insulating layer.
  • the thickness of the first magnetic member is x ⁇ m
  • the first magnetic member is located concentrically with the outer peripheral edge of the first magnetoresistive element as viewed in the direction orthogonal to the insulating layer.
  • the second magnetoresistive element is covered with the first magnetic member and located in a region inside the inner peripheral edge of the first magnetoresistive element when viewed in the direction orthogonal to the insulating layer.
  • the first magnetic member is located in a region including the region on the inner peripheral edge of the first magnetoresistance element and the region inside the inner peripheral edge as viewed in the direction orthogonal to the insulating layer.
  • the second magnetoresistive element is covered with the first magnetic member and located in a region inside the inner peripheral edge of the first magnetoresistive element when viewed in the direction orthogonal to the insulating layer.
  • the first magnetic member covers only the second magnetoresistive element of the first magnetoresistive element and the second magnetoresistive element as viewed in the direction perpendicular to the insulating layer.
  • the second magnetoresistive element is located at a position 7 ⁇ m away from the center of the first magnetic member from the outer peripheral edge of the first magnetic member as viewed in the direction orthogonal to the insulating layer. Is located in the area.
  • the second magnetoresistive element is covered with the second magnetic member and located in a region outside the outer peripheral edge of the first magnetoresistive element when viewed in the direction orthogonal to the insulating layer.
  • the first magnetic member covers only a part of the first magnetoresistance element of the first and second magnetoresistance elements when viewed in the direction perpendicular to the insulating layer.
  • the second magnetic member covers only the second magnetoresistive element of the first magnetoresistive element and the second magnetoresistive element as viewed from the direction perpendicular to the insulating layer.
  • the second magnetoresistive element is located at a position 7 ⁇ m away from the center of the second magnetic member from the outer peripheral edge of the second magnetic member as viewed in the direction orthogonal to the insulating layer. Is located in the area.
  • the first magnetoresistive element includes a plurality of first unit patterns concentrically arranged and connected to each other when viewed in the direction orthogonal to the insulating layer.
  • a magnetic sensor includes a magnetosensitive element, an insulating layer covering the magnetosensitive element, a first conductor portion located on the insulating layer, and an insulating layer located on the first conductor portion And a first magnetic member covering the first conductor as viewed in the direction orthogonal to the layer.
  • the first conductor portion is provided with a through groove or a through hole penetrating in a direction orthogonal to the insulating layer.
  • the first magnetic member is located along the through groove or the through hole when viewed in the direction orthogonal to the insulating layer.
  • the magnetosensitive element has an outer peripheral edge.
  • the first magnetic member is located in an area inside the outer peripheral edge of the magnetosensitive element when viewed in the direction orthogonal to the insulating layer.
  • a magnetoresistive element it is possible to use a magnetoresistive element to achieve high isotropy of detection of a horizontal magnetic field and also to detect a weak vertical magnetic field, and to provide magnetoresistive resistance from a structure provided above the magnetoresistive element. It can suppress that the output accuracy of a magnetic sensor falls by the stress which acts on an element.
  • FIG. 1 It is a perspective view which shows the structure of the magnetic sensor which concerns on Embodiment 1 of this invention. It is sectional drawing which looked at the magnetic sensor of FIG. 1 from the II-II line arrow direction. It is the top view which looked at the magnetic sensor of FIG. 1 from the arrow III direction. It is the top view which looked at the magnetic sensor of FIG. 1 from the arrow IV direction. It is an equivalent circuit schematic of the magnetic sensor which concerns on Embodiment 1 of this invention. It is sectional drawing which shows the laminated structure of the connection part of the magnetoresistive element and wiring in the circuit board of the magnetic sensor which concerns on Embodiment 1 of this invention.
  • FIG. 7 is a flux diagram showing a magnetic flux density distribution when a perpendicular magnetic field is applied to the magnetic sensor according to Experimental Example 1.
  • FIG. 6 is a flux diagram showing a magnetic flux density distribution when a horizontal magnetic field is applied to the magnetic sensor according to Experimental Example 1.
  • the thickness of the first magnetic member given to the relationship between the distance in the horizontal direction from the outer peripheral edge of the first magnetic member and the magnetic field strength in the horizontal direction when the vertical magnetic field is applied to the magnetic sensor according to Experimental Example 2 Is a graph showing the effect of It is a graph which shows the relationship between the distance of the horizontal direction from the outer periphery of the 1st magnetic member to which the magnetic field intensity of the horizontal direction becomes 1/3 of a peak value to the outside, and the thickness of the 1st magnetic member. It is a perspective view which shows the structure of the magnetic sensor which concerns on Embodiment 2 of this invention.
  • FIG. 15 is a cross-sectional view of the magnetic sensor of FIG. 14 as viewed in the arrow direction of the XV-XV line.
  • FIG. 14 It is the top view which looked at the magnetic sensor of FIG. 14 from the arrow XVI direction. It is a perspective view which shows the structure of the magnetic sensor which concerns on Embodiment 3 of this invention.
  • FIG. 18 is a cross-sectional view of the magnetic sensor of FIG. 17 as viewed in the direction of arrows XVIII-XVIII. It is the top view which looked at the magnetic sensor of FIG. 17 from the arrow XIX direction. It is a perspective view which shows the structure of the magnetic sensor which concerns on Embodiment 4 of this invention.
  • FIG. 21 is a cross-sectional view of the magnetic sensor of FIG. 20 as viewed in the direction of the arrows along line XXI-XXI.
  • FIG. 26 is a cross-sectional view of the magnetic sensor of FIG. 25 as viewed in the direction of arrows XXVI-XXVI. It is the top view which looked at the magnetic sensor of FIG. 25 from the arrow XXVII direction. It is the top view which looked at the magnetic sensor of FIG.
  • FIG. 1 is a perspective view showing the configuration of a magnetic sensor according to Embodiment 1 of the present invention.
  • FIG. 2 is a cross-sectional view of the magnetic sensor of FIG. 1 as viewed in the direction of arrows II-II.
  • FIG. 3 is a plan view of the magnetic sensor of FIG. 1 as viewed in the direction of arrow III.
  • FIG. 4 is a plan view of the magnetic sensor of FIG. 1 as viewed in the direction of arrow IV.
  • FIG. 5 is an equivalent circuit diagram of the magnetic sensor according to the first embodiment of the present invention.
  • the width direction of the circuit board 100 described later is shown as the X-axis direction, the length direction of the circuit board 100 as the Y-axis direction, and the thickness direction of the circuit board 100 as the Z-axis direction.
  • the outer edge of the first magnetic member to be described later is indicated by a dotted line.
  • illustration of a differential amplifier, a temperature compensation circuit, and the like, which will be described later, is omitted.
  • the magnetic sensor 1 according to the first embodiment of the present invention includes a circuit board 100 and two first magnetic members 40 provided above the circuit board 100.
  • two first conductor portions 60 are provided on the circuit board 100.
  • the insulating layer 30 covering the magnetic layer 10 is provided on the surface layer of the circuit board 100, and the two first conductor portions 60 are located on the insulating layer 30.
  • Circuit board 100 includes a semiconductor substrate 110.
  • the first conductor portion 60 is provided with a through hole 60 h penetrating in the Z-axis direction which is a direction orthogonal to the insulating layer 30.
  • the through hole 60 h is provided at the center of the first conductor portion 60 as viewed in the Z-axis direction which is a direction orthogonal to the insulating layer 30.
  • the through holes 60h are provided in a circular shape. That is, the first conductor portion 60 has an annular shape.
  • the two first magnetic members 40 are located on the two first conductors 60 in a one-to-one correspondence.
  • the first magnetic member 40 covers the corresponding first conductor portion 60 as viewed in the Z-axis direction which is a direction orthogonal to the insulating layer 30.
  • the first magnetic member 40 is located along the through hole 60 h as viewed in the direction orthogonal to the insulating layer 30. That is, the first magnetic member 40 is provided with the through hole 40 h penetrating in the direction orthogonal to the insulating layer 30.
  • the through hole 40 h is provided at the center of the first magnetic member 40 when viewed in the direction orthogonal to the insulating layer 30. When viewed in the direction orthogonal to the insulating layer 30, the through holes 40h are provided in a circular shape.
  • the first magnetic member 40 has a cylindrical shape.
  • the thickness in the Z-axis direction of the first conductor portion 60 is preferably 2.0 ⁇ m or less.
  • the function of the first magnetic member 40 described later as a magnetic shield can be secured.
  • patterning using a resist can be used as a method of forming the first conductor portion 60.
  • the first conductor portion 60 includes gold (Au) located on the insulating layer 30 and located on the layer containing titanium (Ti) and the layer containing titanium (Ti) It is composed of layers.
  • the layer containing titanium (Ti) is an adhesive layer.
  • a layer containing gold (Au) functions as an electrode reaction layer, that is, a seed layer.
  • the configuration of the first conductor portion 60 is not limited to the above, and iron (Fe), molybdenum (Mo), tantalum (Ta), platinum (Pt) and copper (Cu), which are materials functioning as a seed layer for plating. And a layer comprising at least one of Moreover, when the 1st magnetic body member 40 is formed by methods other than plating, such as vapor deposition, you may be comprised with the other conductor containing at least one of a metal and resin.
  • the four magnetic resistances electrically connected to each other by wires to form a Wheatstone bridge type bridge circuit on the circuit board 100 of the magnetic sensor 1 according to the first embodiment of the present invention.
  • An element is provided.
  • the four magnetoresistance elements consist of two sets of first magnetoresistance elements and second magnetoresistance elements.
  • the magnetic sensor 1 includes a first magnetoresistance element 120a and a second magnetoresistance element 130a, and a first magnetoresistance element 120b and a second magnetoresistance element 130b.
  • the first magnetoresistance element 120a and the second magnetoresistance element 130a constitute one set.
  • the first magnetoresistance element 120 b and the second magnetoresistance element 130 b constitute one set.
  • the magnetic sensor 1 includes the two sets of the first and second magnetoresistance elements, but the invention is not limited thereto, and at least one set of the first and second magnetoresistance elements. It is sufficient if the element is included.
  • the circuit board 100 is configured with a half bridge circuit.
  • Each of the first magnetoresistive elements 120a and 120b and the second magnetoresistive elements 130a and 130b is an AMR (Anisotropic Magneto Resistance) element. Note that each of the first magnetoresistance elements 120a and 120b and the second magnetoresistance elements 130a and 130b is replaced with an AMR element, and a GMR (Giant Magneto Resistance) element, a TMR (Tunnel Magneto Resistance) element, a BMR (Ballistic Magneto Resistance) Or a magnetoresistive element such as a CMR (Colossal Magneto Resistance) element.
  • AMR Analog Magnetotropic Magneto Resistance
  • the first magnetoresistance element 120 a is a so-called magnetosensitive resistance whose electric resistance value changes when an external magnetic field is applied. That is, the first magnetoresistance element 120a functions as a magnetosensitive element, and the second magnetoresistance element 130a does not function as a magnetosensitive element.
  • the rate of change in resistance of the second magnetoresistance element 130a to the external magnetic field is preferably lower than the rate of change in resistance of the first magnetic resistance element 120a to the external magnetic field.
  • the magnetic field in the Z-axis direction (vertical magnetic field) and the magnetic field in the X-axis and Y-axis directions (horizontal It is a so-called fixed resistance that hardly detects the magnetic field.
  • the first magnetoresistance element 120 b is a so-called magnetosensitive resistance whose electric resistance value changes when an external magnetic field is applied. That is, the first magnetoresistance element 120b functions as a magnetosensitive element, and the second magnetoresistance element 130b does not function as a magnetosensitive element.
  • the rate of change in resistance of the second magnetoresistance element 130b to the external magnetic field is preferably lower than the rate of change in resistance of the first magnetic resistance element 120b to the external magnetic field.
  • the first magnetoresistive elements 120 a and 120 b and the second magnetoresistive elements 130 a and 130 b are electrically connected to each other by a wiring provided on the semiconductor substrate 110. Specifically, the first magnetoresistive element 120 a and the second magnetoresistive element 130 a are connected in series by the wire 146. The first magnetoresistance element 120 b and the second magnetoresistance element 130 b are connected in series by the wiring 150.
  • a middle point 140 On the semiconductor substrate 110 of the circuit board 100, a middle point 140, a middle point 141, a power supply terminal (Vcc) 142, a ground terminal (Gnd) 143 and an output terminal (Out) 144 are further provided.
  • Vcc power supply terminal
  • Gnd ground terminal
  • Out output terminal
  • Each of the first magnetoresistance element 120 a and the second magnetoresistance element 130 b is connected to the middle point 140. Specifically, the first magnetoresistive element 120 a and the midpoint 140 are connected by the wire 145, and the second magnetoresistive element 130 b and the midpoint 140 are connected by the wire 152.
  • Each of the first magnetoresistance element 120 b and the second magnetoresistance element 130 a is connected to the middle point 141. Specifically, the first magnetoresistive element 120 b and the midpoint 141 are connected by the wire 149, and the second magnetoresistive element 130 a and the midpoint 141 are connected by the wire 148.
  • the wiring 146 is connected to a power supply terminal (Vcc) 142 to which current is input.
  • the wiring 150 is connected to the ground terminal (Gnd) 143.
  • the magnetic sensor 1 further includes a differential amplifier 160, a temperature compensation circuit 161, a latch and switch circuit 162, and a complementary metal oxide semiconductor (CMOS) driver 163.
  • CMOS complementary metal oxide semiconductor
  • the differential amplifier 160 has an input end connected to each of the midpoints 140 and 141 and an output end connected to the temperature compensation circuit 161. Also, the differential amplifier 160 is connected to each of the power supply terminal (Vcc) 142 and the ground terminal (Gnd) 143.
  • the output terminal of the temperature compensation circuit 161 is connected to the latch and switch circuit 162. Also, the temperature compensation circuit 161 is connected to each of the power supply terminal (Vcc) 142 and the ground terminal (Gnd) 143.
  • An output end of the latch and switch circuit 162 is connected to the CMOS driver 163.
  • the latch and switch circuit 162 is connected to each of the power supply terminal (Vcc) 142 and the ground terminal (Gnd) 143.
  • the output terminal of the CMOS driver 163 is connected to the output terminal (Out) 144.
  • the CMOS driver 163 is connected to each of the power supply terminal (Vcc) 142 and the ground terminal (Gnd) 143.
  • the magnetic sensor 1 By having the above-described circuit configuration, the magnetic sensor 1 generates a potential difference depending on the strength of the external magnetic field between the midpoint 140 and the midpoint 141. When this potential difference exceeds a preset detection level, a signal is output from the output terminal (Out) 144.
  • FIG. 6 is a cross-sectional view showing the laminated structure of the connection portion between the magnetoresistive element and the wiring on the circuit board of the magnetic sensor according to Embodiment 1 of the present invention. In FIG. 6, only the connection between the region R functioning as a magnetoresistive element and the region L functioning as a wire is shown.
  • each of the first magnetoresistance elements 120a and 120b and the second magnetoresistance elements 130a and 130b is a semiconductor made of Si or the like on the surface of which a SiO 2 layer or a Si 3 N 4 layer is provided. It is provided on the substrate 110.
  • the magnetic material layer 10 formed of an alloy containing Ni and Fe provided on the semiconductor substrate 110 is patterned by ion milling. It is formed by being done. The thickness of the magnetic layer 10 is, for example, 0.04 ⁇ m.
  • the wirings 145, 146, 148, 149, 150, and 152 are formed by patterning the conductive layer 20 provided on the semiconductor substrate 110 and made of Au or Al by wet etching.
  • the conductive layer 20 is located immediately above the magnetic layer 10 in the region L functioning as a wire, and is not provided in the region R functioning as a magnetoresistive element. Therefore, as shown in FIG. 6, the end of the conductive layer 20 is located immediately above the magnetic layer 10 in the connection portion between the region R functioning as a magnetoresistive element and the region L functioning as a wire. .
  • Each of middle point 140, middle point 141, power supply terminal (Vcc) 142, ground terminal (Gnd) 143 and output terminal (Out) 144 is formed of conductive layer 20 located directly above semiconductor substrate 110. That is, each of middle point 140, middle point 141, power supply terminal (Vcc) 142, ground terminal (Gnd) 143 and output terminal (Out) 144 is a pad provided on semiconductor substrate 110.
  • a Ti layer not shown is provided immediately above the conductive layer 20.
  • An insulating layer 30 made of SiO 2 or the like is provided to cover the magnetic layer 10 and the conductive layer 20. That is, the insulating layer 30 covers the first magnetoresistive elements 120a and 120b and the second magnetoresistive elements 130a and 130b.
  • FIG. 7 is a plan view showing a pattern of the first magnetoresistive element of the magnetic sensor according to Embodiment 1 of the present invention.
  • the first magneto resistive element 120a, the pattern 120 and 120b when viewed from a direction perpendicular to the insulating layer 30, the diameter of the virtual circle C 1 along the circumference of the virtual circle C 1 It includes four first unit patterns arranged in a direction and connected to each other.
  • the direction orthogonal to the insulating layer 30 is the Z-axis direction, which is parallel to the direction orthogonal to the top surface of the semiconductor substrate 110.
  • Each of the four first unit pattern is located along a virtual C-shaped C 11 a portion where the wiring 146,148,150,152 are located at the circumference of the virtual circle C 1 is opened.
  • Each of the four first unit pattern is a C-shaped pattern 121 disposed concentrically so as to be arranged in a radial direction of the virtual circle C 1 along a virtual C-shaped C 11.
  • C-shaped pattern 121 are connected to each other alternately from the center of the virtual circle C 1 and the one end and the other end in order.
  • the C-shaped patterns 121 whose one ends are connected to each other are connected to each other by a semi-circular pattern 122.
  • the C-shaped patterns 121 whose other ends are connected to each other are connected to each other by a semi-circular pattern 123.
  • the pattern 120 of the first magnetoresistance elements 120a and 120b includes two semicircular arc patterns 122 and one semicircular arc pattern 123. Thus, four C-shaped patterns 121 are connected in series.
  • the semi-arc shaped patterns 122 and 123 do not include linear extending portions, and are formed only of curved portions.
  • An end portion of the C-shaped pattern located on the outermost side from the center of the virtual circle C 1 among the four C-shaped patterns 121, the end portion not connected to the semi-circular pattern 122 is a wiring made of the conductive layer 20 It is connected to 145 or the wiring 149.
  • the electric resistance value of the first magnetoresistance elements 120 a and 120 b can be adjusted by changing the formation position of the conductive layer 20 which is the connection position with the end of the C-shaped pattern 121.
  • the conductive layer 20 is extended to the region R functioning as a magnetoresistive element.
  • the electric resistance value of each of the first magnetoresistance elements 120a and 120b can be reduced by enlarging the region L functioning as the wiring.
  • the conductive layer 20 is shortened to the region L functioning as a wire, thereby reducing the region L functioning as a wire.
  • the electric resistance value of each of the first magnetoresistance elements 120a and 120b can be increased.
  • the adjustment of the electric resistance value of the first magnetoresistance elements 120a and 120b is performed by removing or additionally forming a part of the conductive layer 20. Therefore, the adjustment is preferably performed before the insulating layer 30 is provided.
  • the inner peripheral edge of the C-shaped pattern 121 located at the innermost side from the center of the virtual circle C 1 among the four C-shaped patterns 121 is the inner peripheral edge of the first magnetoresistance elements 120 a and 120 b.
  • the first magnetoresistance element 120 a and the first magnetoresistance element 120 b have different circumferential directions such that the virtual C-shape C 11 has a different orientation. That is, the first magnetoresistance element 120 a and the first magnetoresistance element 120 b have different circumferential directions of the pattern 120 such that the C-shaped patterns 121 have different directions.
  • the first magnetoresistive element 120 a and the first magnetoresistive element 120 b have the circumferential direction of the pattern 120 different by 90 ° such that the C-shaped patterns 121 are different from each other by 90 °. .
  • FIG. 8 is a plan view showing a pattern of a second magnetoresistive element of the magnetic sensor according to Embodiment 1 of the present invention.
  • the second magnetoresistance element 130a is seen from a direction perpendicular to the insulating layer 30, situated in the center of the virtual circle C 1, it is surrounded by a first magnetoresistive element 120a
  • the second magnetoresistive element 130 b is located on the center side of the imaginary circle C 1 when viewed in the direction orthogonal to the insulating layer 30 and is surrounded by the first magnetoresistive element 120 b.
  • the second magnetoresistive element 130 a is located inside the inner peripheral edge of the first magnetoresistive element 120 a when viewed in the direction orthogonal to the insulating layer 30, and the second magnetoresistive element 130 b is located on the insulating layer 30. It is located inside the inner peripheral edge of the 1st magnetoresistive element 120b seeing from the orthogonal direction.
  • Second magnetoresistance element 130a is connected to the wiring 146, 148 made of a conductive layer 20 provided from the central side of the imaginary circle C 1 to the outside of the virtual circle C 1.
  • Second magnetoresistance element 130b is connected to the wiring 150, 152 made of a conductive layer 20 provided from the central side of the imaginary circle C 1 to the outside of the virtual circle C 1.
  • the second magnetoresistance elements 130 a and 130 b have a double spiral pattern 130 when viewed in the direction orthogonal to the insulating layer 30.
  • the double spiral pattern 130 has one spiral pattern 131 which is one of two second unit patterns, the other spiral pattern 132 which is the other one of two second unit patterns, And an inverted S-shaped pattern 133 connecting one spiral pattern 131 and the other spiral pattern 132 at the center of the double spiral pattern 130.
  • the reverse S-shaped pattern 133 does not include a linear extending portion, and is formed only of a curved portion.
  • the double spiral pattern 130 is formed to have the same thickness as the pattern 120. Therefore, each of the one spiral pattern 131 and the other spiral pattern 132 has the same thickness as each of the four C-shaped patterns 121.
  • a double spiral pattern 130 has a shape substantially point-symmetrical with respect to the center of the virtual circle C 1. That is, the double spiral pattern 130 has a substantially 180 ° rotationally symmetrical shape with respect to the center of the virtual circle C 1.
  • the second magnetoresistive element 130 a and the second magnetoresistive element 130 b have different circumferential directions of the double spiral pattern 130 such that the directions of the inverted S-shaped patterns 133 are different from each other. ing.
  • the second magnetoresistive element 130 a and the second magnetoresistive element 130 b have a circumferential direction of the double spiral pattern 130 such that the directions of the inverted S-shaped patterns 133 are different from each other by 90 °. 90 ° different.
  • the first magnetoresistance elements 120 a and 120 b have a C-shaped pattern 121.
  • the C-shaped pattern 121 is configured by an arc.
  • the C-shaped patterns 121 adjacent to each other are connected to each other by a semi-circular pattern 122 or a semi-circular pattern 123.
  • the anisotropy of the magnetic field detection is reduced.
  • the direction of the C-shaped pattern 121 of the first magnetoresistive element 120 a and the direction of the C-shaped pattern 121 of the first magnetoresistive element 120 b are different from each other.
  • the different orientations of the circumferential direction 120 increase the isotropy of magnetic field detection.
  • the second magnetoresistance elements 130 a and 130 b have a double spiral pattern 130.
  • the double spiral pattern 130 is mainly configured by winding a substantially arc-shaped curved portion. Since the arc is an approximation when the number of polygon corners increases to infinity, the direction of the current flowing through the double spiral pattern 130 extends in substantially all directions (360 °) in the horizontal direction. There is.
  • the horizontal direction is a direction parallel to the top surface of the semiconductor substrate 110.
  • the double spiral pattern 130 is configured by an inverted S-shaped pattern 133 in which the central portion is formed of only a curved portion.
  • the second magnetoresistance elements 130a and 130b do not include the linearly extending portions, the anisotropy of the magnetoresistance effect is reduced.
  • the circumferential direction of the double spiral pattern 130 is such that the directions of the reverse S-shaped patterns 133 of the second magnetoresistance element 130a and the second magnetoresistance element 130b are different from each other. Due to the different orientations, the isotropy of the magnetoresistance effect is enhanced.
  • the double spiral pattern 130 has a substantially 180 ° rotationally symmetrical shape with respect to the center of the virtual circle C 1. Therefore, each of the second magnetoresistance element 130a and the second magnetoresistance element 130b has a slight anisotropy of magnetoresistance effect.
  • the magnetic direction of the double spiral pattern 130 of the second magnetoresistance element 130a is different from the direction of the circumferential direction of the double spiral pattern 130 of the second magnetoresistance element 130b.
  • the anisotropy of the resistance effect can be reduced to one another.
  • the direction in which the second magnetoresistance element 130a is the highest sensitivity matches the direction in which the second magnetoresistance element 130b is the lowest sensitivity, and the direction in which the second magnetoresistance element 130a is the lowest sensitivity. And the direction in which the second magnetoresistance element 130 b has the highest sensitivity coincide with each other. Therefore, the potential difference generated between the midpoint 140 and the midpoint 141 when the external magnetic field is applied to the magnetic sensor 1 can be suppressed from fluctuating depending on the direction in which the external magnetic field is applied to the magnetic sensor 1.
  • the double spiral pattern 130 has a high density per unit area.
  • the second magnetoresistance elements 130a and 130b having the double spiral pattern 130 make the pattern disposed in the imaginary circle C 1 longer to make the second magnetoresistance elements 130a and 130b have high resistance. it can.
  • the current consumption of the magnetic sensor 1 can be reduced as the electric resistance value of the second magnetoresistance elements 130a and 130b is higher.
  • the direction of the current flowing through the double spiral pattern 130 is dispersed in the horizontal direction to reduce the anisotropy of the magnetoresistance effect of each of the second magnetoresistance element 130a and the second magnetoresistance element 130b.
  • the output of the magnetic sensor 1 when the external magnetic field is zero can be suppressed from being dispersed due to the influence of the residual magnetization.
  • the double spiral pattern 130 may be wound in the opposite direction, and in this case, the central portion of the double spiral pattern 130 is an S-shaped pattern formed of only a curved portion. That is, one spiral pattern and the other spiral pattern are connected by the S-shaped pattern.
  • the magnetic sensor 1 since the second magnetoresistance elements 130a and 130b are disposed inside the first magnetoresistance elements 120a and 120b, the magnetic sensor 1 can be miniaturized. Further, in the magnetic sensor 1, the circuit board 100 is manufactured by a simple manufacturing process because it is not necessary to three-dimensionally draw the wiring connecting the first magnetoresistance elements 120a and 120b and the second magnetoresistance elements 130a and 130b. It is possible.
  • first magnetic members 40 are provided above the insulating layer 30, and the two first magnetic members 40 are arranged side by side in the Y-axis direction.
  • the thickness x of the first magnetic member 40 is, for example, 10 ⁇ m or more, preferably 20 ⁇ m or more and 150 ⁇ m or less.
  • the first magnetic resistance elements 120 a and 120 b detect a perpendicular magnetic field deflected in a substantially horizontal direction by the first magnetic member 40 as described later. it can.
  • the perpendicular magnetic field can be effectively deflected by the first magnetic member 40 in the substantially horizontal direction, so that the first magnetoresistive elements 120a and 120b are weaker Vertical magnetic field can be detected.
  • the thickness x of the first magnetic member 40 is 150 ⁇ m or less, it is possible to maintain the mass productivity of the magnetic sensor 1 by suppressing an increase in the formation time of the first magnetic member 40.
  • the first magnetic member 40 has a circular outer shape when viewed in the direction orthogonal to the insulating layer 30 and is a region inside the outer peripheral edge of the first magnetoresistance elements 120 a and 120 b. It is located in Note that, with respect to the region inside the outer peripheral edge of the first magnetoresistance elements 120a and 120b, both ends of the outer peripheral edge of the first magnetoresistance elements 120a and 120b are connected by imaginary straight lines when viewed from the direction orthogonal to the insulating layer 30.
  • first magnetic member 40 It is an area surrounded by It is preferable that a region inside the outer peripheral edge of the first magnetoresistance elements 120a and 120b and a half or more of the first magnetic member 40 overlap with each other when viewed from the direction orthogonal to the insulating layer 30, and the first magnetic member More preferably, 2/3 or more of 40 overlap.
  • the first magnetic member 40 is located in a region inside the inner peripheral edge of the first magnetoresistive elements 120 a and 120 b when viewed from the direction orthogonal to the insulating layer 30. Note that with the region inside the inner peripheral edge of the first magnetoresistance elements 120a and 120b, both ends of the inner peripheral edge of the first magnetoresistance elements 120a and 120b are connected by imaginary straight lines when viewed from the direction orthogonal to the insulating layer 30. It is an area surrounded by The first magnetic member 40 may be located in a region including the region on the inner peripheral edge of the first magnetoresistance elements 120 a and 120 b and the region inside the inner peripheral edge as viewed from the direction orthogonal to the insulating layer 30.
  • a region inside the inner peripheral edge of the first magnetoresistance elements 120a and 120b and a half or more of the first magnetic member 40 overlap with each other when viewed from the direction orthogonal to the insulating layer 30, and the first magnetic member More preferably, 2/3 or more of 40 overlap.
  • the first magnetic member 40 is concentric with the outer peripheral edge of the first magnetoresistance elements 120 a and 120 b when viewed from the direction orthogonal to the insulating layer 30.
  • the first magnetic member 40 is a second magnetoresistive element of the first magnetoresistive elements 120 a and 120 b and the second magnetoresistive elements 130 a and 130 b when viewed from the direction orthogonal to the insulating layer 30. It covers only 130a and 130b. Therefore, when viewed from the direction orthogonal to the insulating layer 30, the first magnetic member 40 is surrounded by the first magnetoresistive elements 120a and 120b.
  • the first magnetic member 40 is made of a magnetic material having high magnetic permeability and high saturation magnetic flux density, such as electromagnetic steel, mild steel, silicon steel, permalloy, supermalloy, nickel alloy, iron alloy or ferrite. In addition, these magnetic materials preferably have low coercivity.
  • the magnetic permeability increases at high temperatures and decreases at low temperatures.
  • the resistance of the first magnetoresistance elements 120a and 120b The temperature dependency of the rate of change can be reduced.
  • the first magnetic member 40 is formed, for example, by plating. Another thin layer may be provided between the insulating layer 30 and the first magnetic member 40.
  • the outer shape of the first magnetic member 40 was a cylindrical shape having a diameter of 140 ⁇ m and a thickness x of 100 ⁇ m.
  • the first magnetic member 40 was made of permalloy.
  • the second magnetoresistance elements 130a and 130b above the second magnetoresistance elements 130a and 130b, only the second magnetoresistance elements 130a and 130b of the first magnetoresistance elements 120a and 120b and the second magnetoresistance elements 130a and 130b.
  • the first magnetic member 40 is disposed such that the inner peripheral edge of the first magnetoresistance elements 120 a and 120 b is adjacent to the outer peripheral edge of the first magnetic member 40 when viewed in the direction orthogonal to the insulating layer 30. .
  • the strength of the applied vertical magnetic field or horizontal magnetic field was 30 mT.
  • FIG. 9 is a flux diagram showing a magnetic flux density distribution when a perpendicular magnetic field is applied to the magnetic sensor according to Experimental Example 1.
  • FIG. 10 is a magnetic flux diagram showing a magnetic flux density distribution when a horizontal magnetic field is applied to the magnetic sensor according to Experimental Example 1.
  • FIG. 11 shows the relationship between the distance in the horizontal direction from the outer peripheral edge of the first magnetic member and the magnetic field strength in the horizontal direction when a vertical magnetic field or a horizontal magnetic field is applied to the magnetic sensor according to Experimental Example 1. It is a graph. 9 and 10, only the first magnetic member 40, the first magnetoresistive elements 120a and 120b, and the second magnetoresistive elements 130a and 130b are illustrated when the magnetic sensor 1 is viewed from the horizontal direction.
  • the vertical axis indicates the magnetic field strength (mT) in the horizontal direction
  • the horizontal axis indicates the horizontal distance ( ⁇ m) from the outer peripheral edge of the first magnetic member.
  • the distance in the horizontal direction from the outer peripheral edge of the first magnetic member is a positive distance from the outer peripheral edge of the first magnetic member 40, and the distance from the outer peripheral edge of the first magnetic member 40 to the inner side The distance is indicated by a negative value.
  • the distribution of the magnetic field intensity in the horizontal direction when the perpendicular magnetic field is applied is indicated by a solid line V
  • the distribution of the magnetic field intensity in the horizontal direction when a horizontal magnetic field is applied is indicated by a solid line H.
  • the magnetic flux is applied to the first magnetic member 40 having high permeability on the upper surface side of the first magnetic member 40. Were attracted and collected. The magnetic flux that has entered the first magnetic member 40 passes through the first magnetic member 40 in the vertical direction, and then is diffused and emitted from the lower surface side of the first magnetic member 40.
  • a magnetic field was applied to the second magnetoresistance elements 130 a and 130 b positioned directly below the first magnetic member 40 in a substantially perpendicular direction. Therefore, the second magnetoresistance elements 130a and 130b hardly detect the perpendicular magnetic field.
  • the first magnetoresistance elements 120a and 120b located below the outer peripheral edge of the first magnetic member 40 a magnetic field deflected in a substantially horizontal direction was applied as shown by the arrows in FIG. Therefore, the first magnetoresistance elements 120a and 120b could detect the vertical magnetic field as a magnetic field deflected in the substantially horizontal direction.
  • the magnetic field in the horizontal direction was hardly applied to the second magnetoresistance elements 130a and 130b located immediately below the first magnetic member 40. Therefore, the second magnetoresistance elements 130a and 130b hardly detect the horizontal magnetic field.
  • a magnetic field in the horizontal direction was applied to the first magnetoresistance elements 120 a and 120 b located below the outer peripheral edge of the first magnetic member 40. Therefore, the first magnetoresistance elements 120a and 120b could detect the horizontal magnetic field.
  • a perpendicular magnetic field a position about 10 ⁇ m away from the outer peripheral edge of the first magnetic member 40 from a position about 2 ⁇ m away inwardly from the outer periphery of the first magnetic member 40 Up to the horizontal magnetic field strength was higher than 30 mT, which is the strength of the applied vertical magnetic field.
  • the magnetic field strength in the horizontal direction is higher than 30 mT which is the strength of the applied horizontal magnetic field at the position outside the outer peripheral edge of the first magnetic member 40.
  • the magnetic field strength in the horizontal direction is 1/3 of 30 mT, which is the strength of the applied vertical magnetic field or horizontal magnetic field, at a position spaced about 7 ⁇ m or more inward from the outer peripheral edge of the first magnetic member 40. It was below. Therefore, it is preferable that the second magnetoresistance elements 130a and 130b be provided at a position spaced apart by about 7 ⁇ m or more from the outer peripheral edge of the first magnetic member 40.
  • the horizontal direction The magnetic field strength of the magnetic field is higher than 30 mT, which is the strength of the applied vertical magnetic field or horizontal magnetic field. Therefore, it is preferable that at least a part of the first magnetoresistance elements 120a and 120b be provided in at least a part of this region. More than half of the entire outer circumference of the first magnetic member 40 is surrounded by the first magnetoresistance elements 120a and 120b provided in the above region, as viewed in the direction orthogonal to the insulating layer 30. More preferably, 2/3 or more of the entire outer circumference of the first magnetic member 40 is surrounded.
  • the first magnetic member 40 is positioned concentrically with the outer peripheral edge of the first magnetoresistive elements 120a and 120b when viewed from the direction orthogonal to the insulating layer 30, and the first magnetoresistive elements 120a and 120b.
  • the magnetic field in the horizontal direction emitted outward from the outer peripheral edge of the first magnetic member 40 can be applied approximately equally in the circumferential direction to the first magnetoresistance elements 120a and 120b.
  • the perpendicular magnetic field of the first magnetoresistance elements 120a and 120b is suppressed while suppressing the resistance change of the second magnetoresistance elements 130a and 130b due to the perpendicular magnetic field. It has been confirmed that the detection sensitivity of can be enhanced. That is, the first magnetoresistance elements 120a and 120b can detect a weak vertical magnetic field. Further, the magnetic sensor 1 according to the first embodiment of the present invention improves the detection sensitivity of the horizontal magnetic field of the first magnetic resistance elements 120a and 120b while suppressing the resistance change of the second magnetic resistance elements 130a and 130b due to the horizontal magnetic field. I was able to confirm that I could do it. That is, the first magnetoresistance elements 120a and 120b can detect a weak horizontal magnetic field.
  • FIG. 12 shows the relationship between the distance in the horizontal direction from the outer peripheral edge of the first magnetic member and the magnetic field strength in the horizontal direction when a vertical magnetic field is applied to the magnetic sensor according to Experimental Example 2 It is a graph which shows the influence of the thickness of a body member.
  • the vertical axis indicates the magnetic field strength (mT) in the horizontal direction
  • the horizontal axis indicates the horizontal distance ( ⁇ m) from the outer peripheral edge of the first magnetic member.
  • FIG. 13 is a graph showing the relationship between the thickness of the first magnetic member and the horizontal distance from the outer peripheral edge of the first magnetic member to the outside at which the magnetic field strength in the horizontal direction is 1/3 of the peak value. is there. 12 and 13, the horizontal distance from the outer peripheral edge of the first magnetic member is a positive distance from the outer peripheral edge of the first magnetic member 40 to the first magnetic member 40. The distance away from the outer edge of the inward is indicated by a negative value.
  • the outer shape of the first magnetic member 40 was a cylindrical shape having a diameter of 140 ⁇ m.
  • the thickness x of the first magnetic member 40 was five types of 10 ⁇ m, 20 ⁇ m, 50 ⁇ m, 100 ⁇ m and 150 ⁇ m.
  • the first magnetic member 40 was made of permalloy.
  • the arrangement of the first magnetic member 40 was the same as that of Example 1.
  • the strength of the applied perpendicular magnetic field was 30 mT.
  • the peak value of the magnetic field strength in the horizontal direction increases.
  • the dependency on the permeability of the first magnetic member 40 is small, and the permeability of the first magnetic member 40 is There is almost no change when
  • a horizontal magnetic field of 1/3 or more of the peak value of the magnetic field strength in the horizontal direction is applied to the first magnetoresistance elements 120a and 120b, And it is preferable that the intensity of the magnetic field in the horizontal direction applied to the second magnetoresistance elements 130a and 130b is 1/10 or less of the peak value of the magnetic field intensity in the horizontal direction.
  • the magnetic field strength in the horizontal direction is 1/1 of the peak value. It was 3 or more.
  • the horizontal distance y from the outer peripheral edge of the first magnetic member 40 to the outer side where the magnetic field strength in the horizontal direction is 1/3 of the peak value is the thickness of the first magnetic member 40. It became long as x became thick.
  • the magnetic field strength in the horizontal direction becomes 1/3 or more of the peak value. Therefore, when viewed from the direction orthogonal to the insulating layer 30, the above-mentioned formula (I) is shown outside from the outer peripheral edge of the first magnetic member 40 from a position spaced 2 ⁇ m inward from the outer peripheral edge of the first magnetic member 40 In the region up to a position separated by y ⁇ m, the magnetic field strength in the horizontal direction becomes 1/3 or more of the peak value.
  • the magnetic field strength in the horizontal direction is 1/1 of the peak value. It was less than ten. That is, in the region from the center of the first magnetic member 40 to the position 7 ⁇ m away from the outer peripheral edge of the first magnetic member 40 in the direction perpendicular to the insulating layer 30, the magnetic field strength in the horizontal direction was less than 1/10 of the peak value.
  • the first magnetic member It is preferable to be located in at least one part of an area
  • the center of the first magnetic member 40 to a position 7 ⁇ m away from the outer peripheral edge of the first magnetic member 40 when the second magnetoresistive elements 130 a and 130 b are viewed in the direction orthogonal to the insulating layer 30.
  • it is located in the area of
  • the magnetic sensor 1 according to Embodiment 1 of the present invention can detect the vertical magnetic field and the horizontal magnetic field with high sensitivity. Further, the magnetic sensor 1 according to the first embodiment of the present invention includes a plurality of first unit patterns in which the first magnetoresistance elements 120a and 120b are arranged concentrically, so that the isotropy of detection of the horizontal magnetic field is obtained. high.
  • the double spiral pattern 130 of the second magnetoresistance elements 130a and 130b is formed to have the same thickness as the pattern 120 of the first magnetoresistance elements 120a and 120b.
  • the double spiral pattern 130 may be formed in a pattern thinner than the pattern 120.
  • the magnetoresistance effect of the second magnetoresistance elements 130a and 130b is smaller than that of the first magnetoresistance elements 120a and 120b.
  • the magnetoresistance effect of the second magnetoresistance elements 130a and 130b is suppressed, and the rate of change in resistance of the second magnetoresistance elements 130a and 130b is significantly reduced.
  • the detection sensitivity of the magnetic sensor 1 can be increased by increasing the potential difference generated between the midpoint 140 and the midpoint 141 when the external magnetic field is applied to the magnetic sensor 1. Further, since the electric resistance value of the second magnetoresistance elements 130a and 130b is high, a reduction in the potential difference generated between the middle point 140 and the middle point 141 when an external magnetic field of high magnetic field strength is applied to the magnetic sensor 1 Is relatively small, and the output characteristics of the magnetic sensor 1 can be stabilized.
  • the second magnetoresistive elements 130a and 130b are magnetically shielded by the first magnetic member 40 and hardly detect the vertical magnetic field and the horizontal magnetic field, the second magnetoresistive elements 130a and 130b are not necessarily detected.
  • the rate of change in resistance does not have to be smaller than the rate of change in resistance of the first magnetoresistance elements 120a and 120b.
  • the first conductor portion 60 is provided between the first magnetic member 40 and the circuit board 100, and the first conductor portion 60 includes As viewed in the Z-axis direction which is a direction orthogonal to the insulating layer 30, the through holes 60h are provided.
  • the contact area between the first conductor portion 60 and the circuit board 100 can be reduced, and the stress acting on the contact interface between the first conductor portion 60 and the insulating layer 30 can be dispersed.
  • the stress acting on the first magnetoresistance elements 120a and 120b and the second magnetoresistance elements 130a and 130b from the first magnetic member 40 through the first conductor portion 60 can be reduced, and the output of the magnetic sensor 1 can be reduced. It is possible to suppress the decrease in accuracy.
  • generation of a crack in the insulating layer 30 due to the stress acting on the insulating layer 30 from the first magnetic member 40 through the first conductor portion 60 can be suppressed. Thereby, it can suppress that the reliability of the magnetic sensor 1 falls.
  • the magnetic sensor 1 has high isotropy of detection of the horizontal magnetic field and can detect weak vertical magnetic fields by using the magnetoresistance element, and can also detect magnetic resistance. It is possible to suppress a decrease in output accuracy due to a stress acting on a magnetoresistive element from a structure provided above the element.
  • thickness x of the 1st magnetic material member 40 into the thickness of the part located on the 1st conductor part 60 in the 1st magnetic material member 40, the verification result based on Experimental example 1 and Experimental example 2 It is possible to use
  • Embodiment 2 of the present invention a magnetic sensor according to Embodiment 2 of the present invention will be described with reference to the drawings.
  • the magnetic sensor according to the second embodiment of the present invention is different from the magnetic sensor 1 according to the first embodiment of the present invention mainly in the shapes of the first conductor portion and the first magnetic member, so that the embodiment of the present invention is implemented.
  • the description of the same configuration as that of the magnetic sensor 1 according to the first embodiment will not be repeated.
  • FIG. 14 is a perspective view showing a configuration of a magnetic sensor according to Embodiment 2 of the present invention.
  • FIG. 15 is a cross-sectional view of the magnetic sensor of FIG. 14 as viewed in the arrow direction of XV-XV.
  • FIG. 16 is a plan view of the magnetic sensor of FIG. 14 as viewed in the direction of arrow XVI.
  • the first conductor portion 60 a penetrates in the Z axis direction which is a direction orthogonal to the insulating layer 30.
  • a groove 60am is provided. When viewed in the Z-axis direction which is a direction orthogonal to the insulating layer 30, the through groove 60am extends linearly. The through groove 60am passes through the center of the first conductor portion 60a as viewed in the Z-axis direction which is a direction orthogonal to the insulating layer 30.
  • the first conductor portion 60a when viewed in the Z-axis direction which is a direction orthogonal to the insulating layer 30, the first conductor portion 60a has a substantially circular shape separated into two semicircular shapes.
  • the shape of the first conductor portion 60a is not limited to the above.
  • the through groove 60am is not provided at the center of the first conductor portion 60a but is divided into two, and the first conductor portion 60a is You may be comprised by 1 member.
  • the two first magnetic members 40a are located on the two first conductors 60a in a one-to-one correspondence.
  • the first magnetic member 40 a covers the corresponding first conductor portion 60 a when viewed in the direction orthogonal to the insulating layer 30.
  • the first magnetic member 40 a is located along the through groove 60 am when viewed in the direction orthogonal to the insulating layer 30. That is, in the first magnetic member 40a, a through groove 40am penetrating in the direction orthogonal to the insulating layer 30 is provided.
  • the through groove 40am passes through the center of the first magnetic member 40a as viewed from the direction perpendicular to the insulating layer 30.
  • the first magnetic member 40a has a substantially cylindrical shape divided into two half cylinders.
  • the shape of the first magnetic member 40a is not limited to the above, and for example, the through groove 40am is not provided at the center of the first magnetic member 40a but is divided into two, and the first magnetic member 40a is You may be comprised by 1 member.
  • the first conductor portion 60a has the above shape, whereby the plating solution is formed along the through groove 60am on the outer peripheral side of the first conductor portion 60a. Since it can flow out, it can suppress that a plating solution is confined in the inside of the 1st magnetic member 40a.
  • the first conductor portion 60a is provided between the first magnetic member 40a and the circuit board 100, and the first conductor portion 60a is insulated. As viewed in the Z-axis direction which is a direction orthogonal to the layer 30, the through groove 60am is provided.
  • the contact area between the first conductor portion 60 a and the circuit board 100 can be reduced, and the stress acting on the contact interface between the first conductor portion 60 a and the insulating layer 30 can be dispersed.
  • the stress acting on the first magnetoresistance elements 120a and 120b and the second magnetoresistance elements 130a and 130b from the first magnetic member 40a through the first conductor portion 60a can be reduced, and the output of the magnetic sensor 1a It is possible to suppress the decrease in accuracy.
  • Embodiment 3 a magnetic sensor according to Embodiment 3 of the present invention will be described with reference to the drawings.
  • the magnetic sensor according to the third embodiment of the present invention is different from the magnetic sensor 1a according to the second embodiment of the present invention mainly in that another through groove is further provided in the first conductor portion. Description is not repeated about the same composition as magnetic sensor 1a concerning Embodiment 2 of the present invention.
  • FIG. 17 is a perspective view showing the configuration of a magnetic sensor according to Embodiment 3 of the present invention.
  • FIG. 18 is a cross-sectional view of the magnetic sensor of FIG. 17 as viewed in the direction of arrows XVIII-XVIII.
  • FIG. 19 is a plan view of the magnetic sensor of FIG. 17 as viewed in the direction of arrow XIX.
  • the first conductor portion 60b penetrates in the Z axis direction which is a direction orthogonal to the insulating layer 30.
  • Grooves 60am and other through grooves 60bm are provided.
  • the other through grooves 60bm extend linearly.
  • the other through grooves 60bm pass through the center of the first conductor portion 60b when viewed from the Z-axis direction which is a direction orthogonal to the insulating layer 30.
  • the other through groove 60bm intersects the through groove 60am at the center of the first conductor portion 60b when viewed from the Z-axis direction which is a direction orthogonal to the insulating layer 30. That is, the first conductor portion 60b has a substantially circular shape separated into four quadrants.
  • the shape of the first conductor portion 60b is not limited to the above.
  • each of the through groove 60am and the other through groove 60bm is not provided at the center of the first conductor portion 60b, but is divided into two.
  • the first conductor portion 60b may be constituted by one member.
  • the two first magnetic members 40b are located on the two first conductor parts 60b so as to correspond one to one.
  • the first magnetic member 40 b covers the corresponding first conductor portion 60 b as viewed in the direction orthogonal to the insulating layer 30.
  • the first magnetic member 40b is located along the through groove 60am and the other through groove 60bm when viewed from the direction orthogonal to the insulating layer 30. That is, in the first magnetic member 40b, a through groove 40am and another through groove 40bm which are penetrated in the direction orthogonal to the insulating layer 30 are provided.
  • the other through grooves 40 bm pass through the center of the first magnetic member 40 b when viewed in the direction orthogonal to the insulating layer 30.
  • the other through groove 40bm intersects the through groove 40am at the center of the first magnetic member 40b when viewed in the direction orthogonal to the insulating layer 30.
  • the first magnetic member 40b has a substantially cylindrical shape divided into four quadrants.
  • the shape of the first magnetic member 40b is not limited to the above.
  • each of the through groove 40am and the other through groove 40bm is not provided at the center of the first magnetic member 40b but divided into two.
  • the first magnetic member 40b may be formed of one member.
  • the first conductor portion 60b has the above-described shape, whereby the plating solution is formed along the through groove 60am and the other through groove 60bm. Since it can flow out to the outer peripheral side of the part 60b, it can suppress that a plating solution is confined in the inside of the 1st magnetic material member 40b.
  • the first conductor portion 60b is provided between the first magnetic member 40b and the circuit board 100, and the first conductor portion 60b includes A through groove 60am and another through groove 60bm are provided when viewed from the Z-axis direction which is a direction orthogonal to the insulating layer 30.
  • the contact area between the first conductor portion 60 b and the circuit board 100 can be reduced, and the stress acting on the contact interface between the first conductor portion 60 b and the insulating layer 30 can be dispersed.
  • the stress acting on the first magnetoresistance elements 120a and 120b and the second magnetoresistance elements 130a and 130b from the first magnetic member 40b through the first conductor portion 60b can be reduced, and the output of the magnetic sensor 1b It is possible to suppress the decrease in accuracy.
  • the magnetic sensor according to the fourth embodiment of the present invention differs from the magnetic sensor 1 according to the first embodiment of the present invention mainly in that the magnetic sensor according to the fourth embodiment of the present invention does not include the first conductor portion. The description of the same configuration as that of the magnetic sensor 1 will not be repeated.
  • FIG. 20 is a perspective view showing a configuration of a magnetic sensor according to Embodiment 4 of the present invention.
  • FIG. 21 is a cross-sectional view of the magnetic sensor of FIG. 20 as viewed in the direction of the arrows along line XXI-XXI.
  • FIG. 22 is a plan view of the magnetic sensor of FIG. 20 as viewed in the direction of arrow XXII.
  • the first magnetic member 40 is provided on the circuit board 100.
  • the first magnetic member 40 is provided with a through hole 40 h penetrating in the Z-axis direction which is a direction orthogonal to the insulating layer 30.
  • the first magnetic member 40 has a cylindrical shape.
  • the contact area between the first magnetic member 40 and the circuit board 100 can be reduced, and the stress acting on the contact interface between the first magnetic member 40 and the insulating layer 30 can be dispersed.
  • the generation of a crack in the insulating layer 30 due to the stress acting on the insulating layer 30 from the first magnetic member 40 can be suppressed. Thereby, it can suppress that the reliability of the magnetic sensor 1c falls.
  • the shape of the first magnetic member 40 is not limited to the above, and may be the shape of the first magnetic member 40a according to the second embodiment or the shape of the first magnetic member 40b according to the third embodiment. It is also good.
  • Embodiment 5 a magnetic sensor according to Embodiment 5 of the present invention will be described with reference to the drawings.
  • the magnetic sensor according to the fifth embodiment of the present invention is different from the magnetic sensor 1 according to the first embodiment of the present invention mainly in the pattern of the second magnetoresistive element, so the magnetic sensor according to the first embodiment of the present invention Description will not be repeated for configurations that are similar to 1.
  • FIG. 23 is a plan view of a magnetic sensor according to Embodiment 5 of the present invention.
  • FIG. 24 is a plan view showing a pattern of the second magnetoresistive element of the magnetic sensor according to Embodiment 5 of the present invention.
  • the magnetic sensor 2 according to Embodiment 5 of the present invention includes a circuit board 200 and two first magnetic members 40 provided above the circuit board 200.
  • two first conductor portions are provided on the circuit board 200.
  • the first magnetic member 40 covers the corresponding first conductive portion as viewed in the Z-axis direction which is a direction orthogonal to the insulating layer 30.
  • the first magneto resistive element 120a of the magnetic sensor 2 according to a fifth embodiment of the present invention, 120b of the pattern is viewed from the direction perpendicular to the insulating layer 30, the imaginary circle C 2 including three first unit patterns connected to each other are arranged side by side in the radial direction of the virtual circle C 2 along the circumference.
  • Each of the three first unit pattern is located along a virtual C-shape C 21 a portion where the wiring 146,148,150,152 are located at the circumference of the virtual circle C 2 is opened.
  • Each of the three first unit pattern is a C-shaped pattern which are arranged side by side in the radial direction of the virtual circle C 2 along a virtual C-shape C 21.
  • the first magnetoresistance element 120a and the first magnetoresistance element 120b differ in the circumferential direction of the pattern by 90 ° so that the directions of the C-shaped patterns are different from each other by 90 °.
  • the second magnetoresistance element 230a, 230b when viewed from a direction perpendicular to the insulating layer 30, situated in the center of the imaginary circle C 2, the first magnetoresistive element 120a, 120b It is surrounded by That is, the second magnetoresistance elements 230a and 230b are located inside the inner peripheral edge of the first magnetoresistance elements 120a and 120b when viewed from the direction orthogonal to the insulating layer 30.
  • Second magnetoresistance element 230a, 230b is fourteen semicircular pattern is a second unit pattern arranged symmetrically so as to align in the radial direction of the virtual circle C 2 along the circumference of the virtual circle C 2
  • a pattern 230 including 231 is included.
  • the pattern 230 is formed to have the same thickness as the pattern 120 of the first magnetoresistance elements 120a and 120b. However, the thickness of the pattern 230 may be thinner than the thickness of the pattern 120.
  • the fourteen semi-circular patterns 231 are alternately connected to each other at one end and the other in order from the inside.
  • the semicircular arc-shaped patterns 231 whose ends are connected to each other are connected to each other by a semicircular arc-shaped pattern 232.
  • the semicircular arc patterns 231 whose other ends are connected to each other are connected to each other by a semicircular arc pattern 233.
  • the semicircular arc-shaped patterns 231 located at the innermost and symmetrical with each other are connected to each other at their one ends by the linear extending portions 234.
  • the length of the linear extension 234 is less than 10 ⁇ m.
  • the pattern 230 of the second magnetoresistive elements 230a and 230b includes six semicircular arc patterns 232, six semicircular arc patterns 233, and a linear extension 234. As a result, fourteen semi-circular patterns 231 are connected in series.
  • the semi-arc shaped patterns 232 and 233 do not include linear extending parts, and are formed only of curved parts.
  • the second magnetoresistance elements 230 a and 230 b have a semicircular arc-shaped pattern 231.
  • the semicircular arc-shaped pattern 231 is configured by an arc.
  • Two semi-arc shaped patterns 231 adjacent to each other are connected to each other by semi-arc shaped patterns 232 and 233. Since the second magnetoresistive elements 230a and 230b include only the linear extending portion 234 whose length is shorter than 10 ⁇ m, the anisotropy of the magnetic field detection is reduced.
  • the second magnetoresistance element 230 a and the second magnetoresistance element 230 b are different in the circumferential direction of the pattern 230.
  • the second magnetoresistance element 130a and the second magnetoresistance element 130b differ in the circumferential direction of the pattern 230 by 90 °.
  • the magnetic sensor 2 since the second magnetoresistance elements 230a and 230b are disposed inside the first magnetoresistance elements 120a and 120b, the magnetic sensor 2 can be miniaturized. Further, in the magnetic sensor 2 as well, it is not necessary to three-dimensionally extend the wiring connecting the first magnetoresistance elements 120a and 120b and the second magnetoresistance elements 230a and 230b, so the circuit board 200 is manufactured by a simple manufacturing process. It is possible.
  • the first magnetic member 40 when viewed from the Z-axis direction which is a direction perpendicular to the insulating layer 30, the first magnetic member 40 is one of the first magnetoresistive elements 120a and 120b and the second magnetoresistive elements 230a and 230b. Only the second magnetoresistance elements 230a and 230b.
  • the vertical magnetic field and the horizontal magnetic field can be detected with high sensitivity.
  • the magnetic sensor 2 according to Embodiment 5 of the present invention includes a plurality of first unit patterns in which the first magnetoresistance elements 120a and 120b are arranged concentrically, so that the isotropy of detection of the horizontal magnetic field is obtained. high.
  • the second magnetoresistance elements 230a and 230b are magnetically shielded by the first magnetic member 40 and hardly detect the vertical magnetic field and the horizontal magnetic field, the second magnetoresistance elements 230a and 230b are not necessarily detected.
  • the rate of change in resistance does not have to be smaller than the rate of change in resistance of the first magnetoresistance elements 120a and 120b.
  • the isotropy of detection of the horizontal magnetic field is high, and a weak vertical magnetic field can be detected, and above the magnetoresistive element It is possible to suppress the decrease in output accuracy due to the stress acting on the magnetoresistive element from the provided structure.
  • Embodiment 6 a magnetic sensor according to Embodiment 6 of the present invention will be described with reference to the drawings.
  • the pattern of each of the first and second magnetoresistance elements, the arrangement of the second magnetoresistance element, and the point of including the second conductor portion The configuration is the same as that of the magnetic sensor 1 according to the first embodiment of the present invention, and therefore, the description will not be repeated because it is mainly different from the magnetic sensor 1 according to the first embodiment of the present invention.
  • FIG. 25 is a perspective view showing a configuration of a magnetic sensor according to Embodiment 6 of the present invention.
  • FIG. 26 is a cross-sectional view of the magnetic sensor of FIG. 25 as viewed in the direction of arrows XXVI-XXVI.
  • FIG. 27 is a plan view of the magnetic sensor of FIG. 25 as viewed in the direction of arrow XXVII.
  • the magnetic sensor 3 includes a circuit board 300, and two first magnetic members 40 and two first magnetic members 40 provided above the circuit board 300. And 2 a magnetic member 50.
  • the two first conductor parts 60 and the two second conductor parts 70 are provided on the circuit board 300.
  • the insulating layer 30 is provided on the surface layer of the circuit board 300, and the two first conductor parts 60 and the two second conductor parts 70 are located on the insulating layer 30.
  • the second conductor portion 70 is provided with a through hole 70 h penetrating in the Z-axis direction which is a direction orthogonal to the insulating layer 30.
  • the through hole 70 h is provided at the center of the second conductor portion 70 as viewed in the Z-axis direction which is a direction orthogonal to the insulating layer 30.
  • the through holes 70h are provided in a bent rectangular shape. That is, the second conductor portion 70 has an annular shape while having a bent rectangular outer shape when viewed from the Z-axis direction which is a direction orthogonal to the insulating layer 30.
  • the two second magnetic members 50 are located on the two second conductor portions 70 in a one-to-one correspondence.
  • the second magnetic member 50 covers the corresponding second conductor portion 70 as viewed in the direction orthogonal to the insulating layer 30.
  • the second magnetic member 50 is located along the through hole 70 h as viewed in the direction orthogonal to the insulating layer 30. That is, the second magnetic member 50 is provided with the through hole 50 h penetrating in the direction orthogonal to the insulating layer 30.
  • the through hole 50 h is provided at the center of the second magnetic member 50 when viewed in the direction orthogonal to the insulating layer 30.
  • the through holes 50h are provided in a bent rectangular shape.
  • the second magnetic member 50 has a tubular shape while having a bent rectangular outer shape when viewed in the direction orthogonal to the insulating layer 30.
  • the thickness in the Z-axis direction of the second conductor portion 70 is preferably 2.0 ⁇ m or less.
  • the function of the second magnetic member 50 as a magnetic shield can be secured.
  • patterning using a resist can be used as a method of forming the second conductor portion 70.
  • the second conductor portion 70 is located on the insulating layer 30 and is a layer containing titanium (Ti) and a layer containing gold (Au) located on the layer containing titanium (Ti) And consists of The layer containing titanium (Ti) is an adhesive layer.
  • a layer containing gold (Au) functions as an electrode reaction layer, that is, a seed layer.
  • the configuration of the second conductor portion 70 is not limited to the above, and iron (Fe), molybdenum (Mo), tantalum (Ta), platinum (Pt) and copper (Cu), which are materials functioning as a seed layer for plating. And a layer comprising at least one of Moreover, when the 2nd magnetic body member 50 is formed by methods other than plating, such as vapor deposition, you may be comprised with the other conductor containing at least one of a metal and resin.
  • FIG. 28 is a plan view of the magnetic sensor of FIG. 25 as viewed in the direction of arrow XXVIII.
  • the circuit board 300 of the magnetic sensor 3 according to the sixth embodiment of the present invention is provided with four magnetoresistive elements electrically connected to each other by wires to form a Wheatstone bridge type bridge circuit. It is done.
  • the four magnetoresistance elements consist of two sets of first magnetoresistance elements and second magnetoresistance elements.
  • the magnetic sensor 3 includes a first magnetoresistive element 320a and a second magnetoresistive element 330a, and a first magnetoresistive element 320b and a second magnetoresistive element 330b.
  • the first magnetoresistance element 320a and the second magnetoresistance element 330a constitute one set.
  • the first magnetoresistance element 320 b and the second magnetoresistance element 330 b constitute one set.
  • FIG. 29 is a plan view showing a pattern of the first magnetoresistive element of the magnetic sensor according to Embodiment 6 of the present invention.
  • the first magnetoresistance elements 320a and 320b have a double spiral pattern 320 when viewed from the direction orthogonal to the insulating layer 30.
  • the two double spiral patterns 320 are concentrically arranged in the radial direction of the imaginary circle along the circumference of the imaginary circle and viewed from the direction orthogonal to the insulating layer 30 and connected to each other. Includes unit patterns.
  • the double spiral pattern 320 includes one spiral pattern 321 which is a first unit pattern, the other spiral pattern 322 which is a first unit pattern, and one spiral pattern 321 and the other spiral pattern 322. Are connected at the central portion of the double spiral pattern 320.
  • the S-shaped pattern 323 does not include a linear extending portion, and is formed only of a curved portion.
  • the double spiral pattern 320 has redundant portions 324 and 325 for adjusting the length of the double spiral pattern 320 at the end of each spiral pattern 321 and the other spiral pattern 322.
  • the length adjustment redundant portions 324 and 325 are configured by bending and folding the end portions of one spiral pattern 321 and the other spiral pattern 322, respectively.
  • the length adjustment redundant portion 324 provided in one spiral pattern 321 and the length adjustment redundant portion 325 provided in the other spiral pattern 322 are mutually different in the radial direction of the double spiral pattern 320. It is located on the opposite side.
  • Each of the length adjustment redundant portions 324 and 325 does not include a linear extending portion, and is configured only by a curved portion.
  • the double spiral pattern 320 is connected to the conductive layer 20 forming the wiring in the length adjustment redundant portions 324 and 325.
  • the electric resistance value of the first magnetoresistance elements 320a and 320b can be adjusted.
  • the conductive layer 20 is extended to the region R functioning as a magnetoresistive element.
  • the electric resistance value of each of the first magnetoresistance elements 320a and 320b can be reduced by enlarging the region L functioning as the wiring.
  • the conductive layer 20 is shortened to the region L functioning as a wire, thereby reducing the region L functioning as a wire.
  • the electric resistance value of each of the first magnetoresistance elements 320a and 320b can be increased.
  • the adjustment of the electric resistance value of the first magnetoresistance elements 320a and 320b is performed by removing or additionally forming a part of the conductive layer 20. Therefore, the adjustment is preferably performed before the insulating layer 30 is provided.
  • the double spiral pattern 320 has a substantially point-symmetrical shape with respect to the central point of the double spiral pattern 320. That is, the double spiral pattern 320 has a shape that is approximately 180 ° rotationally symmetric with respect to the center point of the double spiral pattern 320.
  • the circumferential direction of the double spiral pattern 320 is different so that the directions of the S-shaped patterns 323 are different from each other. There is.
  • the circumferential direction of the double spiral pattern 320 is 90 so that the orientations of the S-shaped patterns 323 are different from each other by 90 °. ° is different.
  • the double spiral pattern 320 may be wound in the reverse direction, and in this case, the central portion of the double spiral pattern 320 is formed of an inverted S-shaped pattern including only a curved portion. That is, one spiral pattern 321 and the other spiral pattern 322 are connected by the reverse S-shaped pattern.
  • FIG. 30 is a plan view showing the pattern of the second magnetoresistance element of the magnetic sensor according to Embodiment 6 of the present invention.
  • FIG. 31 is a plan view showing a second unit pattern included in the pattern of the second magnetoresistance element of the magnetic sensor according to Embodiment 6 of the present invention.
  • FIG. 30 only one of three patterns 330 of the same shape that the second magnetoresistance elements 330a and 330b have is illustrated.
  • the second magnetoresistive elements 330a and 330b are located outside the outer peripheral edge of the first magnetoresistive elements 320a and 320b when viewed from the Z-axis direction which is a direction orthogonal to the insulating layer 30. positioned.
  • the second magnetoresistance elements 330a and 330b three patterns 330 of the same shape including eight second unit patterns 370 folded back having a plurality of curved portions are connected in series.
  • the second magnetoresistance element 330 a three patterns 330 of the same shape are connected to each other by the wiring 147.
  • the second magnetoresistance element 330 b three patterns 330 having the same shape are connected to each other by the wiring 151.
  • the pattern 330 is formed in a thinner pattern than the double spiral pattern 320. Thereby, in the second magnetoresistance elements 330a and 330b, necessary electric resistance values are secured.
  • the current consumption of the magnetic sensor 3 can be reduced as the electric resistance value of the second magnetoresistance elements 330a and 330b is higher.
  • the second unit pattern 370 includes 14 curved portions B 1 to B 14 and 15 linear extension portions L 1 to L 15 between the start end 370 a and the end end 370 b. Have a fold. That is, the second unit pattern 370 has a bag-like shape with the start end 370a and the end end 370b as the mouth.
  • the second unit pattern 370 is bent at a right angle in each of the 14 curved portions B 1 to B 14 .
  • the second unit pattern 370 does not include a linear extension of 10 ⁇ m or more. That is, the length of each of the fifteen linear extensions L 1 to L 15 is shorter than 10 ⁇ m.
  • the pattern of the second magnetoresistance elements 330a and 330b is not limited to the above, and includes at least one second unit having a plurality of curved portions and folded without including a linear extending portion having a length of 10 ⁇ m or more. It should just contain the pattern.
  • the magnetoresistance effect of the second magnetoresistance elements 330a and 330b is suppressed, and the rate of change in resistance is significantly reduced.
  • the rate of change in resistance of the second magnetoresistance elements 330a and 330b is lower than the rate of change in resistance of the first magnetoresistance elements 320a and 320b.
  • the first magnetoresistance elements 320 a and 320 b have a double spiral pattern 320.
  • the double spiral pattern 320 is mainly configured by winding a substantially arc-shaped curved portion. Since the arc is an approximation when the number of polygon corners increases to infinity, the direction of the current flowing through the double spiral pattern 320 extends in substantially all directions (360 °) in the horizontal direction. There is. Therefore, the first magnetoresistance elements 320a and 320b can detect an external magnetic field over substantially all directions (360 °) in the horizontal direction.
  • the double spiral pattern 320 is formed of an S-shaped pattern 323 in which the central portion is formed of only the curved portion, and for the length adjustment of which the outer peripheral portion is formed of only the curved portion. It comprises the redundant parts 324 and 325. As described above, since each of the first magnetoresistance elements 320a and 320b does not include a linear extension, the anisotropy of magnetic field detection is reduced.
  • the circumferential direction of the double spiral pattern 320 is different such that the directions of the S-shaped patterns 323 of the first magnetoresistance elements 320a and 320b are different from each other. As a result, the isotropy of magnetic field detection is enhanced.
  • each of the second magnetoresistance elements 330a and 330b does not include a linear extending portion having a length of 10 ⁇ m or more, and each of the 14 curved portions B 1 to B 14 , And includes a second unit pattern 370 having a bag-like shape with the start end 370a and the end 370b as a mouth.
  • the direction of the current flowing through the second unit pattern 370 can be dispersed in the horizontal direction, and the anisotropy of the magnetoresistance effect of the second magnetoresistance elements 330a and 330b can be reduced.
  • the direction of the current flowing through the pattern 330 are dispersed in the horizontal direction, the second magneto resistive element 330a, the magnetoresistance effect of 330b Anisotropy can be reduced.
  • the circuit board can be manufactured by a simple manufacturing process. 300 can be manufactured.
  • the pattern 330 is formed thinner than the double spiral pattern 320, the magnetoresistance effect of the second magnetoresistance elements 330a and 330b is suppressed, and the rate of change in resistance of the second magnetoresistance elements 330a and 330b is extremely small. Become.
  • the detection sensitivity of the magnetic sensor 3 can be increased by increasing the potential difference generated between the midpoint 140 and the midpoint 141 when an external magnetic field is applied to the magnetic sensor 3. Further, since the electric resistance value of the second magnetoresistance elements 330a and 330b is high, a reduction in the potential difference generated between the midpoint 140 and the midpoint 141 when an external magnetic field of high magnetic field strength is applied to the magnetic sensor 3 Is relatively small, and the output characteristics of the magnetic sensor 3 can be stabilized.
  • first magnetic members 40 and two second magnetic members 50 are disposed on the insulating layer 30.
  • the thickness of each of the first magnetic member 40 and the second magnetic member 50 is, for example, 10 ⁇ m or more, preferably 20 ⁇ m or more and 150 ⁇ m or less. The thicknesses may be different from each other, but in the case where the thicknesses are the same, the two first magnetic members 40 and the two second magnetic members 50 are processed in the same step. The two first magnetic members 40 and the two second magnetic members 50 can be easily formed.
  • the first magnetic member 40 has a circular outer shape when viewed in the direction orthogonal to the insulating layer 30, and is a region inside the outer peripheral edge of the first magnetoresistance elements 320a and 320b. It is located in In the present embodiment, the first magnetic member 40 is located concentrically with the outer peripheral edge of the first magnetoresistive elements 320 a and 320 b when viewed from the direction orthogonal to the insulating layer 30.
  • the first magnetic member 40 when viewed from the direction perpendicular to the insulating layer 30, the first magnetic member 40 is the first magnetoresistive element of the first magnetoresistive elements 320a and 320b and the second magnetoresistive elements 330a and 330b. It covers only the central part of 320a and 320b. Therefore, as viewed in the direction orthogonal to the insulating layer 30, the first magnetic member 40 is surrounded by the outer peripheral portions of the first magnetoresistance elements 320a and 320b.
  • the second magnetic member 50 covers only the second magnetoresistance elements 330a and 330b of the first magnetoresistance elements 320a and 320b and the second magnetoresistance elements 330a and 330b, as viewed from the direction orthogonal to the insulating layer 30. ing.
  • the second magnetoresistive elements 330 a and 330 b are each positioned 7 ⁇ m away from the center of the second magnetic member 50 from the outer peripheral edge of the second magnetic member 50 as viewed in the direction orthogonal to the insulating layer 30. It is preferable to be located in the area.
  • the second magnetic member 50 is made of a magnetic material having high magnetic permeability and high saturation magnetic flux density, such as electromagnetic steel, mild steel, silicon steel, permalloy, supermalloy, nickel alloy, iron alloy or ferrite. In addition, these magnetic materials preferably have low coercivity.
  • the magnetic sensor 3 suppresses the resistance change of the second magnetoresistance elements 330a and 330b due to the perpendicular magnetic field, and the perpendicular magnetic field of the first magnetoresistance elements 320a and 320b by the first magnetic member 40. Detection sensitivity can be increased.
  • the first magnetic body member 40 performs the first magnetic body member 40 while suppressing the resistance change of the second magnetoresistive elements 330 a and 330 b due to the horizontal magnetic field.
  • the detection sensitivity of the horizontal magnetic field of the magnetoresistive elements 320a and 320b can be enhanced.
  • the reason why the detection sensitivity of the horizontal magnetic field of the first magnetoresistance elements 320a and 320b can be enhanced by the first magnetic body member 40 is that the first magnetoresistance elements 320a and 320b are covered by the first magnetic body member 40.
  • the strength of the horizontal magnetic field applied to the central portion of the first magnetic resistance element 320a, 320b is longer than the central portions of the first magnetic resistance elements 320a, 320b, the ratio of the resistance value in the entire pattern is large. Since the horizontal magnetic field emitted from the first magnetic member 40 at a high magnetic field strength is applied to the outer peripheral portion of the first magnetic member 40, the first magnetic resistance members 320a and 320b The intensity of the horizontal magnetic field applied to the
  • the vertical magnetic field and the horizontal magnetic field can be detected with high sensitivity.
  • the magnetic sensor 3 according to the sixth embodiment of the present invention by including the plurality of first unit patterns in which the first magnetoresistance elements 320a and 320b are arranged concentrically, the isotropy of detection of the horizontal magnetic field is obtained. high.
  • the second magnetoresistance elements 330a and 330b are magnetically shielded by the second magnetic member 50 and hardly detect the vertical magnetic field and the horizontal magnetic field, the second magnetoresistance elements 330a and 330b are not necessarily detected.
  • the rate of change in resistance may not be smaller than the rate of change in resistance of the first magnetoresistance elements 320a and 320b.
  • the second conductor portion 70 is provided between the second magnetic member 50 and the circuit board 300, and the second conductor portion 70 includes: As viewed in the Z-axis direction which is a direction orthogonal to the insulating layer 30, the through holes 70h are provided.
  • the contact area between the second conductor portion 70 and the circuit board 300 can be reduced, and the stress acting on the contact interface between the second conductor portion 70 and the insulating layer 30 can be dispersed.
  • the stress acting on the second magnetoresistance elements 130a and 130b from the second magnetic member 50 through the second conductor portion 70 can be reduced, and a decrease in the output accuracy of the magnetic sensor can be suppressed.
  • generation of a crack in the insulating layer 30 due to the stress acting on the insulating layer 30 from the second magnetic member 50 through the second conductor portion 70 can be suppressed. Thereby, it can suppress that the reliability of the magnetic sensor 3 falls.
  • the isotropy of detection of the horizontal magnetic field is high, and a weak vertical magnetic field can be detected, and above the magnetoresistive element It is possible to suppress the decrease in output accuracy due to the stress acting on the magnetoresistive element from the provided structure.
  • the configuration of the first magnetic member 40 according to the fourth embodiment may be applied to the second magnetic member 50. In this case, the magnetic sensor 3 does not include the second conductor portion 70.
  • the magnetic sensor according to the seventh embodiment of the present invention is different from the magnetic sensor 3 according to the sixth embodiment of the present invention mainly in the pattern of each of the first and second magnetoresistance elements. The description of the same configuration as that of the magnetic sensor 3 according to the sixth embodiment will not be repeated.
  • FIG. 32 is a perspective view showing a configuration of a magnetic sensor according to Embodiment 7 of the present invention.
  • FIG. 33 is a plan view of the magnetic sensor of FIG. 32 as viewed in the direction of arrow XXXIII.
  • the magnetic sensor 4 according to the seventh embodiment of the present invention includes a circuit board 400, two first magnetic members 40 and two first magnetic members 40 provided above the circuit board 400. And 2 a magnetic member 50.
  • two first conductor parts 60 and two second conductor parts 70 are provided on the circuit board 400.
  • the insulating layer 30 is provided on the surface layer of the circuit board 400, and each of the two first conductor parts 60 and the two second conductor parts 70 is located on the insulating layer 30.
  • the first magnetic member 40 covers the corresponding first conductor portion 60 as viewed in the Z-axis direction which is a direction orthogonal to the insulating layer 30.
  • the second magnetic member 50 covers the corresponding second conductor portion 70 as viewed in the Z-axis direction which is a direction orthogonal to the insulating layer 30.
  • the circuit board 400 of the magnetic sensor 4 according to the seventh embodiment of the present invention is provided with four magnetoresistive elements which are electrically connected to each other by wires to form a Wheatstone bridge type bridge circuit.
  • the four magnetoresistance elements consist of two sets of first magnetoresistance elements and second magnetoresistance elements.
  • the magnetic sensor 4 includes a first magnetoresistance element 420a and a second magnetoresistance element 430a, and a first magnetoresistance element 420b and a second magnetoresistance element 430b.
  • the first magnetoresistance elements 420 a and 420 b have a double spiral pattern as viewed from the direction orthogonal to the insulating layer 30.
  • the two double spiral patterns are arranged concentrically so as to be arranged in the radial direction of the imaginary circle along the circumference of the imaginary circle when viewed in the direction orthogonal to the insulating layer 30, and connected to each other. Including patterns.
  • the double spiral pattern is a double spiral of one spiral pattern which is a first unit pattern, the other spiral pattern which is a first unit pattern, and one spiral pattern and the other spiral pattern. It includes an S-shaped pattern connected at the center of the pattern.
  • the S-shaped pattern does not include a linear extension, and is formed only of a curved portion.
  • the first magnetoresistance element 420a and the first magnetoresistance element 420b have different directions in the circumferential direction of the double spiral pattern so that the directions of the S-shaped patterns are different from each other.
  • the first magnetoresistive element 420a and the first magnetoresistive element 420b have a 90 ° difference in the circumferential direction of the double spiral pattern such that the S-shaped pattern has a 90 ° difference in direction. ing.
  • the double spiral pattern may be wound in the opposite direction, and in this case, the central portion of the double spiral pattern is formed of an inverted S-shaped pattern including only a curved portion. That is, one spiral pattern and the other spiral pattern are connected by the reverse S-shaped pattern.
  • the second magnetoresistance elements 430a and 430b are located outside the outer peripheral edge of the first magnetoresistance elements 420a and 420b when viewed from the direction orthogonal to the insulating layer 30.
  • the second magnetoresistance elements 430 a and 430 b have a meandering pattern as viewed from the direction orthogonal to the insulating layer 30.
  • the meandering pattern of the second magnetoresistance elements 430a and 430b is formed to have the same thickness as the double spiral pattern of the first magnetoresistance elements 420a and 420b. However, the thickness of the meandering pattern of the second magnetoresistance elements 430a and 430b may be thinner than the thickness of the double spiral pattern of the first magnetoresistance elements 420a and 420b.
  • the first magnetic member 40 has a circular outer shape when viewed in the direction orthogonal to the insulating layer 30, and is a region inside the outer peripheral edge of the first magnetoresistance elements 420a and 420b. It is located in In the present embodiment, the first magnetic member 40 is concentric with the outer peripheral edge of the first magnetoresistance elements 420 a and 420 b when viewed from the direction orthogonal to the insulating layer 30.
  • the first magnetic member 40 when viewed from the direction perpendicular to the insulating layer 30, the first magnetic member 40 is the first magnetoresistive element of the first magnetoresistive elements 420a and 420b and the second magnetoresistive elements 430a and 430b. It covers only the central part of 420a and 420b. Therefore, when viewed in the direction orthogonal to the insulating layer 30, the first magnetic member 40 is surrounded by the outer peripheral portions of the first magnetoresistance elements 420a and 420b.
  • the second magnetic member 50 covers only the second magnetoresistance elements 430a and 430b of the first magnetoresistance elements 420a and 420b and the second magnetoresistance elements 430a and 430b, as viewed from the direction orthogonal to the insulating layer 30. ing.
  • the magnetic sensor 4 according to the seventh embodiment of the present invention suppresses the resistance change of the second magnetoresistance elements 430a and 430b due to the perpendicular magnetic field, and the perpendicular magnetic field of the first magnetoresistance elements 420a and 420b by the first magnetic member 40. Detection sensitivity can be increased.
  • the first magnetic body member 40 performs the first magnetic body member 40 while suppressing the resistance change of the second magnetoresistive elements 430 a and 430 b due to the horizontal magnetic field.
  • the detection sensitivity of the horizontal magnetic field of the magnetoresistive elements 420a and 420b can be enhanced.
  • the vertical magnetic field and the horizontal magnetic field can be detected with high sensitivity.
  • the magnetic sensor 4 according to Embodiment 7 of the present invention includes a plurality of first unit patterns in which the first magnetoresistance elements 420a and 420b are arranged concentrically, so that the isotropy of detection of the horizontal magnetic field is obtained. high.
  • the second magnetoresistance elements 430a and 430b are magnetically shielded by the second magnetic member 50 and hardly detect the vertical magnetic field and the horizontal magnetic field, the second magnetoresistance elements 430a and 430b are not necessarily detected.
  • the rate of change in resistance does not have to be smaller than the rate of change in resistance of the first magnetoresistance elements 420a and 420b.
  • the isotropy of detection of the horizontal magnetic field is high, and a weak vertical magnetic field can be detected, and above the magnetoresistive element It is possible to suppress the decrease in output accuracy due to the stress acting on the magnetoresistive element from the provided structure.
  • Embodiment 8 a magnetic sensor according to Embodiment 8 of the present invention will be described with reference to the drawings.
  • the patterns of the first and second magnetic resistance elements and the shape of the first magnetic member mainly refer to the magnetic sensor according to the first embodiment of the present invention.
  • the configuration is the same as that of the magnetic sensor 1 according to the first embodiment of the present invention, and therefore the description will not be repeated.
  • FIG. 34 is a plan view showing the configuration of the magnetic sensor according to Embodiment 8 of the present invention.
  • FIG. 35 is a plan view showing a pattern of the first magnetoresistive element of the magnetic sensor according to Embodiment 8 of the present invention.
  • FIG. 36 is a plan view showing a pattern of the second magnetoresistance element of the magnetic sensor according to Embodiment 8 of the present invention.
  • the magnetic sensor 5 according to Embodiment 8 of the present invention includes a circuit board 500 and two first magnetic members 45 provided above the circuit board 500.
  • two first conductor portions are provided on the circuit board 500.
  • the first magnetic member 45 covers the corresponding first conductive portion as viewed in the Z-axis direction which is a direction orthogonal to the insulating layer 30.
  • the first conductor portion has a substantially regular octagonal outer shape when viewed from the Z-axis direction which is a direction orthogonal to the insulating layer 30.
  • a through hole penetrating in the Z-axis direction which is a direction orthogonal to the insulating layer 30 is provided.
  • the imaginary circle C 5 includes four first unit patterns connected to each other are arranged side by side in the radial direction of the virtual circle C 5 along the circumference.
  • Each of the four first unit pattern is located along a virtual C-shape C 51 which portion positioned wiring 146,148,150,152 in the circumference of the virtual circle C 5 is opened.
  • Each of the four first unit pattern is a C-shaped pattern 521 which is arranged concentrically so as to be arranged in a radial direction of the virtual circle C 5 along the virtual C-shape C 51.
  • the four C-shaped patterns 521 are alternately connected to each other at one end and the other end sequentially from the inside.
  • C-shaped pattern 521 which one ends are connected are connected to each other by linear pattern 522 extending in the radial direction of the virtual circle C 5.
  • C-shaped pattern 521 and the other end are connected to each other are connected to each other by a linear pattern 523 extending in the radial direction of the virtual circle C 5.
  • the pattern 520 of the first magnetoresistance elements 520 a and 520 b includes two linear patterns 522 and one linear pattern 523. Thus, four C-shaped patterns 521 are connected in series.
  • the outer peripheral edge of the outermost C-shaped pattern 521 is the outer peripheral edge of the first magnetoresistance elements 520a and 520b.
  • the inner peripheral edge of the C-shaped pattern 521 located at the innermost side becomes the inner peripheral edge of the first magnetoresistance elements 520a and 520b.
  • the first magnetoresistance element 520a and the first magnetoresistance element 520b have different circumferential directions such that the virtual C-shape C 51 has a different orientation. That is, the first magnetoresistance element 520a and the first magnetoresistance element 520b have different circumferential directions of the pattern 520 such that the C-shaped patterns 521 have different directions.
  • the first magnetoresistance element 520 a and the first magnetoresistance element 520 b have the circumferential direction of the pattern 520 different by 90 ° such that the C-shaped patterns 521 are different from each other by 90 °. .
  • the second magnetoresistance element 530a, 530b when viewed from a direction perpendicular to the insulating layer 30, situated in the center of the virtual circle C 5, first magnetoresistive element 520a, 520b It is surrounded by That is, the second magnetoresistive elements 530 a and 530 b are located inside the inner peripheral edge of the first magnetoresistive elements 520 a and 520 b when viewed in the direction orthogonal to the insulating layer 30.
  • Second magnetoresistance element 530a is connected to the wiring 146, 148 led from the center of the virtual circle C 5 to the outside of the virtual circle C 5.
  • Second magnetoresistance element 530b is connected to the wiring 150, 152 led from the center of the virtual circle C 5 to the outside of the virtual circle C 5.
  • the second magnetoresistance elements 530 a and 530 b have a double spiral pattern 530 as viewed from the direction orthogonal to the insulating layer 30.
  • the double spiral pattern 530 has one spiral pattern 531 which is one of the two second unit patterns, the other spiral pattern 532 which is the other one of the two second unit patterns, And an inverted S-shaped pattern 533 connecting one spiral pattern 531 and the other spiral pattern 532 at the center of the double spiral pattern 530.
  • the reverse S-shaped pattern 533 is composed of a plurality of linear extension portions whose length is shorter than 10 ⁇ m.
  • the double spiral pattern 530 is formed to have the same thickness as the pattern 520. Therefore, each of the one spiral pattern 531 and the other spiral pattern 532 has the same thickness as that of each of the four C-shaped patterns 521. However, the thickness of the double spiral pattern 530 may be thinner than the thickness of the pattern 520.
  • the double spiral pattern 530 has a shape substantially point-symmetrical with respect to the center of the virtual circle C 5. That is, the double spiral pattern 530 has a substantially 180 ° rotationally symmetrical shape with respect to the center of the virtual circle C 5.
  • the second magnetoresistance element 530a and the second magnetoresistance element 530b have different circumferential directions of the double spiral pattern 530 such that the directions of the inverted S-shaped patterns 533 are different from each other. ing.
  • the second magnetoresistive element 530 a and the second magnetoresistive element 530 b have a circumferential direction of the double spiral pattern 530 such that the directions of the inverted S-shaped patterns 533 differ from each other by 90 °. 90 ° different.
  • the first magnetoresistance elements 520 a and 520 b have a C-shaped pattern 521.
  • the C-shaped pattern 521 is constituted by approximately seven sides out of eight sides constituting an approximately regular octagon. As described above, since the first magnetoresistance elements 520a and 520b are constituted by most of the sides constituting the polygon, the anisotropy of the magnetic field detection is reduced.
  • the circumferential direction of the pattern 520 is different so that the directions of the C-shaped patterns 521 of the first magnetoresistance element 520a and the first magnetoresistance element 520b are different from each other. Because of this, the isotropy of magnetic field detection is high.
  • the second magnetoresistance elements 530 a and 530 b have a double spiral pattern 530.
  • the double spiral pattern 530 is mainly configured by winding the sides forming a substantially regular octagon.
  • the circumferential direction of the double spiral pattern 530 is such that the directions of the reverse S-shaped patterns 533 of the second magnetoresistance element 530a and the second magnetoresistance element 530b are different from each other. Is different, the isotropy of the magnetoresistance effect is high.
  • the magnetic sensor 5 since the second magnetoresistance elements 530a and 530b are disposed inside the first magnetoresistance elements 520a and 520b, the magnetic sensor 5 can be miniaturized. Further, in the magnetic sensor 5 as well, it is not necessary to three-dimensionally extend the wiring connecting the first magnetoresistance elements 520a and 520b and the second magnetoresistance elements 530a and 530b, so the circuit board 500 is manufactured by a simple manufacturing process. It is possible.
  • the first magnetic member 45 has a regular octagonal outer shape as viewed in the direction orthogonal to the insulating layer 30, and is inside the outer peripheral edge of the first magnetoresistance elements 520a and 520b. Located in the area of Here, the region inside the outer peripheral edge of the first magnetoresistance elements 520a and 520b is connected with the outer peripheral edge of the first magnetoresistance elements 520a and 520b by a virtual straight line when viewed from the direction orthogonal to the insulating layer 30.
  • the first magnetic member 45 is located in a region inside the inner peripheral edge of the first magnetoresistive elements 520 a and 520 b when viewed in the direction orthogonal to the insulating layer 30.
  • the first magnetic member 45 may be located in a region including the region on the inner peripheral edge of the first magnetoresistive elements 520 a and 520 b and the region inside the inner peripheral edge as viewed from the direction orthogonal to the insulating layer 30.
  • the inner peripheral edge of the first magnetoresistance elements 520a and 520b is connected by a virtual straight line as viewed from the direction orthogonal to the insulating layer 30 with the region inside the inner peripheral edges of the first magnetoresistance elements 520a and 520b.
  • the first magnetic member 45 is concentric with the outer peripheral edge of the first magnetoresistance elements 520 a and 520 b when viewed from the direction orthogonal to the insulating layer 30.
  • the first magnetic member 45 is a second magnetoresistive element of the first magnetoresistive elements 520 a and 520 b and the second magnetoresistive elements 530 a and 530 b when viewed from the direction orthogonal to the insulating layer 30. It covers only 530a and 530b. Therefore, when viewed from the direction orthogonal to the insulating layer 30, a half or more of the entire periphery of the first magnetic member 40 is surrounded by the first magnetoresistance elements 120a and 120b.
  • the vertical magnetic field and the horizontal magnetic field can be detected with high sensitivity.
  • the isotropy of detection of the horizontal magnetic field is obtained by including the plurality of first unit patterns in which the first magnetoresistance elements 520a and 520b are arranged in a polygonal shape. high.
  • each of the first magnetoresistance elements 520a and 520b, the second magnetoresistance elements 530a and 530b, and the first magnetic member 45 has a shape along a concentric regular octagon.
  • these shapes are not limited to the above, and may be shapes along concentric polygons. As the number of corners of this polygon is increased, the isotropy of detection of the horizontal magnetic field of the first magnetoresistance elements 520a and 520b can be made higher.
  • the second magnetoresistive elements 530a and 530b are magnetically shielded by the first magnetic member 45 and hardly detect the vertical magnetic field and the horizontal magnetic field, the second magnetoresistive elements 530a and 530b are not necessarily detected.
  • the rate of change in resistance may not be smaller than the rate of change in resistance of the first magnetoresistance elements 520a and 520b.
  • the isotropy of detection of a horizontal magnetic field is high using a magnetoresistance element, and a weak vertical magnetic field can also be detected, and above the magnetoresistance element. It is possible to suppress the decrease in output accuracy due to the stress acting on the magnetoresistive element from the provided structure.

Abstract

This magnetic sensor comprises: a magnetosensitive element; an insulating layer covering the magnetosensitive element; a first conductor part (60) located on the insulating layer; and a first magnetic member (40) located on the first conductor part (60) and which, when viewed from the direction orthogonal to the insulating layer, covers the first conductor part (60). The magnetosensitive element has an outer peripheral edge. The first magnetic member (40), when viewed from the direction orthogonal to the insulating layer, is located in a region inside the outer peripheral edge of the magnetosensitive element. The first conductor part (60) is provided with a through-groove or a through-hole passing through in the direction orthogonal to the insulating layer. The first magnetic body (40), when viewed from the direction orthogonal to the insulating layer, is located along the through-groove or the through-hole.

Description

磁気センサMagnetic sensor
　本発明は、磁気センサに関し、特に、磁気抵抗素子を含む磁気センサに関する。 The present invention relates to a magnetic sensor, and more particularly to a magnetic sensor including a magnetoresistive element.
　磁気センサの構成を開示した先行文献として、特開２０１３－４４６４１号公報(特許文献１)、国際公開第２０１５／１８２３６５号(特許文献２)、国際公開第２０１６／０１３３４５号(特許文献３)、国際公開第２００７／１１９５６９号(特許文献４)、特開２０１７－１６６９２５号公報(特許文献５)、および、特開２０１６－１７３３１７号公報(特許文献６)がある。 As prior documents disclosing the configuration of the magnetic sensor, Japanese Patent Application Laid-Open No. 2013-44641 (Patent Document 1), International Publication No. 2015/182365 (Patent Document 2), International Publication No. 2016/013345 (Patent Document 3), There are International Publication No. 2007/119569 (Patent Document 4), JP-A-2017-166925 (Patent Document 5), and JP-A-2016-173317 (Patent Document 6).
　特許文献１に記載された磁気センサは、互いに接続されてブリッジ回路を構成し、ミアンダ状に各々形成された、第１磁気抵抗素子、第２磁気抵抗素子、第３磁気抵抗素子および第４磁気抵抗素子を備える。第１磁気抵抗素子、第２磁気抵抗素子、第３磁気抵抗素子および第４磁気抵抗素子の表面は、絶縁膜によって覆われている。いわゆる固定抵抗である第３磁気抵抗素子および第４磁気抵抗素子の表面には、絶縁膜を挟んで磁性材料からなる磁束集磁膜が形成されている。 The magnetic sensors described in Patent Document 1 are connected to each other to form a bridge circuit, and each of a first magnetoresistive element, a second magnetoresistive element, a third magnetoresistive element, and a fourth magnetic element formed in a meander shape. A resistive element is provided. The surfaces of the first magnetoresistive element, the second magnetoresistive element, the third magnetoresistive element, and the fourth magnetoresistive element are covered with an insulating film. A magnetic flux collecting film made of a magnetic material is formed on the surfaces of the third magnetoresistive element and the fourth magnetoresistive element, which are so-called fixed resistors, with an insulating film interposed therebetween.
　特許文献２および特許文献３に記載された磁気センサは、第１磁気抵抗素子、および、第１磁気抵抗素子より抵抗変化率が小さい第２磁気抵抗素子を備える。いわゆる感磁素子である第１磁気抵抗素子は、同心円状に配置されたパターンを含んでいる。 The magnetic sensor described in Patent Document 2 and Patent Document 3 includes a first magnetoresistive element and a second magnetoresistive element having a smaller rate of change in resistance than the first magnetoresistive element. The first magnetoresistance element, which is a so-called magnetosensitive element, includes a pattern arranged concentrically.
　特許文献４に記載された磁気センサは、複数のホール素子が設けられた半導体基板と、半導体基板上に設けられた磁気増幅機能を有する磁性体とを備える。半導体基板上に磁性体の下地となる下地層が設けられている。下地層は、複数のホール素子と異なる熱膨張率を有している。下地層は、複数のホール素子の領域を少なくとも部分的に覆う面積を有している。磁性体は、下地層の面積より大きい面積を有している。 The magnetic sensor described in Patent Document 4 includes a semiconductor substrate provided with a plurality of Hall elements, and a magnetic body having a magnetic amplification function provided on the semiconductor substrate. An underlayer serving as an underlayer of a magnetic substance is provided on a semiconductor substrate. The underlayer has a coefficient of thermal expansion different from that of the plurality of Hall elements. The underlayer has an area that at least partially covers the areas of the plurality of Hall elements. The magnetic body has an area larger than the area of the underlayer.
　特許文献５に記載された磁気センサは、複数のホール素子が設けられた半導体基板と、半導体基板上に設けられた磁気収束機能を有する磁性体とを備える。半導体基板上の磁性体の縦断面外形形状を規定する外周部において、外周部の少なくとも一部に曲線形状を有する部分と、半導体基板と略平行な部分とを有している。磁性体内部に非磁性物質からなる構造体の少なくとも一部が埋め込まれている。 The magnetic sensor described in Patent Document 5 includes a semiconductor substrate provided with a plurality of Hall elements, and a magnetic body having a magnetic focusing function provided on the semiconductor substrate. The outer peripheral portion defining the outer cross-sectional shape of the magnetic body on the semiconductor substrate has a portion having a curved shape in at least a part of the outer peripheral portion and a portion substantially parallel to the semiconductor substrate. At least a portion of the nonmagnetic substance is embedded inside the magnetic body.
　特許文献６に記載された磁気センサは、半導体基板上に設けられたホール素子と、半導体基板上に設けられてホール素子の各々を少なくとも部分的に覆っている、磁気増幅機能を有する磁性体とを備える。磁性体には、スリットまたはスロットが設けられている。 The magnetic sensor described in Patent Document 6 includes a Hall element provided on a semiconductor substrate, and a magnetic body having a magnetic amplification function provided on the semiconductor substrate and at least partially covering each of the Hall elements. Equipped with The magnetic body is provided with a slit or a slot.
特開２０１３－４４６４１号公報JP, 2013-44641, A 国際公開第２０１５／１８２３６５号International Publication No. 2015/182365 国際公開第２０１６／０１３３４５号International Publication No. 2016/013345 国際公開第２００７／１１９５６９号WO 2007/119569 特開２０１７－１６６９２５号公報JP, 2017-166925, A 特開２０１６－１７３３１７号公報JP, 2016-173317, A
　特許文献１に記載された磁気センサにおいては、いわゆる感磁素子である第１磁気抵抗素子および第２磁気抵抗素子の各々がミアンダ状のパターンを含んでいるため、水平磁界の検出の等方性が低い。 In the magnetic sensor described in Patent Document 1, each of the first magnetoresistance element and the second magnetoresistance element, which are so-called magnetosensitive elements, includes a meander-like pattern, and therefore, the isotropy of detection of the horizontal magnetic field Is low.
　特許文献２および特許文献３に記載された磁気センサにおいては、第１磁気抵抗素子が同心円状に配置されたパターンを含んでいるため、水平磁界の検出の等方性は高いが、微弱な垂直磁界を検出することができない。 In the magnetic sensors described in Patent Document 2 and Patent Document 3, since the first magnetoresistive element includes a pattern in which the first magnetoresistive elements are arranged concentrically, the isotropic property of detection of the horizontal magnetic field is high, but the weak vertical It can not detect the magnetic field.
　特許文献４、特許文献５および特許文献６に記載された磁気センサにおいては、ホール素子を備える磁気センサであり、磁気抵抗素子を用いて水平磁界および垂直磁界を検出することは考慮されていない。 The magnetic sensors described in Patent Document 4, Patent Document 5 and Patent Document 6 are magnetic sensors provided with Hall elements, and it is not considered to detect a horizontal magnetic field and a vertical magnetic field using a magnetoresistive element.
　本発明は上記の問題点に鑑みてなされたものであって、磁気抵抗素子を用いて、水平磁界の検出の等方性が高く、微弱な垂直磁界も検出することができるとともに、磁気抵抗素子の上方に設けられた構造体から磁気抵抗素子に作用する応力によって出力精度が低下することを抑制できる、磁気センサを提供することを目的とする。 The present invention has been made in view of the above problems, and a magnetoresistance element is used to achieve high isotropy of detection of a horizontal magnetic field and to detect a weak vertical magnetic field, and a magnetoresistance element. It is an object of the present invention to provide a magnetic sensor capable of suppressing a decrease in output accuracy due to a stress acting on a magnetoresistive element from a structure provided above.
　本発明の第１局面に基づく磁気センサは、第１磁気抵抗素子と、第１磁気抵抗素子と電気的に接続されてブリッジ回路を構成する第２磁気抵抗素子と、第１磁気抵抗素子および第２磁気抵抗素子を覆う絶縁層と、絶縁層上に位置する、第１導電体部および第１導電体部とは異なる第２導電体部のうちの、少なくとも第１導電体部と、第１導電体部上に位置し、絶縁層に直交する方向から見て、第１導電体部を覆う第１磁性体部材、および、第２導電体部上に位置し、絶縁層に直交する方向から見て、第２導電体部を覆う、第１磁性体部材とは異なる第２磁性体部材のうちの、少なくとも第１磁性体部材とを備える。第１磁気抵抗素子は、外周縁および内周縁のうちの少なくとも外周縁を有する。第１磁性体部材は、絶縁層に直交する方向から見て、第１磁気抵抗素子の外周縁より内側の領域に位置している。第２磁気抵抗素子は、絶縁層に直交する方向から見て、第１磁気抵抗素子の内周縁より内側の領域に位置して第１磁性体部材で覆われている、または、第１磁気抵抗素子の外周縁より外側の領域に位置して第２磁性体部材で覆われている。第１導電体部には、絶縁層に直交する方向に貫通した、貫通溝または貫通孔が設けられている。第１磁性体部材は、絶縁層に直交する方向から見て、上記貫通溝または上記貫通孔に沿って位置している。 A magnetic sensor according to a first aspect of the present invention includes a first magnetoresistance element, a second magnetoresistance element electrically connected to the first magnetoresistance element to form a bridge circuit, a first magnetoresistance element, and a first magnetoresistance element. (2) At least a first conductor portion of an insulating layer covering the magnetoresistive element, and a second conductor portion located on the insulating layer and different from the first conductor portion and the first conductor portion; A first magnetic member that covers the first conductor portion and is located on the conductor portion and viewed from the direction orthogonal to the insulating layer, and from a direction that is located on the second conductor portion and is orthogonal to the insulating layer In view of the above, at least the first magnetic member among the second magnetic members different from the first magnetic member is provided to cover the second conductor portion. The first magnetoresistive element has at least the outer periphery of the outer periphery and the inner periphery. The first magnetic member is located in an area inside the outer peripheral edge of the first magnetoresistive element as viewed in the direction orthogonal to the insulating layer. The second magnetoresistive element is located in a region inside the inner peripheral edge of the first magnetoresistive element and viewed from the direction perpendicular to the insulating layer, and is covered with the first magnetic member or the first magnetoresistive element The second magnetic member is located in a region outside the outer peripheral edge of the element. The first conductor portion is provided with a through groove or a through hole penetrating in a direction orthogonal to the insulating layer. The first magnetic member is located along the through groove or the through hole when viewed in the direction orthogonal to the insulating layer.
　本発明の一形態においては、絶縁層に直交する方向から見て、上記貫通孔は、第１導電体部の中央に設けられている。 In one aspect of the present invention, the through hole is provided at the center of the first conductor portion when viewed in the direction orthogonal to the insulating layer.
　本発明の一形態においては、絶縁層に直交する方向から見て、上記貫通孔は、円形状に設けられている。 In one aspect of the present invention, the through holes are provided in a circular shape when viewed in the direction orthogonal to the insulating layer.
　本発明の一形態においては、絶縁層に直交する方向から見て、上記貫通溝は、第１導電体部の中心を通過している。 In one aspect of the present invention, when viewed in the direction orthogonal to the insulating layer, the through groove passes through the center of the first conductor portion.
　本発明の一形態においては、絶縁層に直交する方向から見て、上記貫通溝は、直線状に延在している。 In one aspect of the present invention, the through groove extends in a straight line when viewed in the direction orthogonal to the insulating layer.
　本発明の一形態においては、第１導電体部に、絶縁層に直交する方向に貫通した、他の貫通溝がさらに設けられている。上記他の貫通溝は、絶縁層に直交する方向から見て、上記貫通溝と第１導電体部の中心で交差している。 In one aspect of the present invention, the first conductor portion is further provided with another penetration groove penetrating in the direction orthogonal to the insulating layer. The other through groove intersects the center of the first groove with the through hole when viewed in the direction perpendicular to the insulating layer.
　本発明の一形態においては、絶縁層に直交する方向から見て、上記他の貫通溝は、直線状に延在している。 In one aspect of the present invention, the other through grooves extend in a straight line when viewed in the direction orthogonal to the insulating layer.
　本発明の第２局面に基づく磁気センサは、第１磁気抵抗素子と、第１磁気抵抗素子と電気的に接続されてブリッジ回路を構成する第２磁気抵抗素子と、第１磁気抵抗素子および第２磁気抵抗素子を覆う絶縁層と、絶縁層上に位置する、第１磁性体部材および第１磁性体部材とは異なる第２磁性体部材のうちの少なくとも第１磁性体部材とを備える。第１磁気抵抗素子は、外周縁および内周縁のうちの少なくとも外周縁を有する。第１磁性体部材は、絶縁層に直交する方向から見て、第１磁気抵抗素子の外周縁より内側の領域に位置している。第２磁気抵抗素子は、絶縁層に直交する方向から見て、第１磁気抵抗素子の内周縁より内側の領域に位置して第１磁性体部材で覆われている、または、第１磁気抵抗素子の外周縁より外側の領域に位置して第２磁性体部材で覆われている。第１磁性体部材には、絶縁層に直交する方向に貫通した、貫通溝または貫通孔が設けられている。 A magnetic sensor according to a second aspect of the present invention includes a first magnetoresistance element, a second magnetoresistance element electrically connected to the first magnetoresistance element to form a bridge circuit, a first magnetoresistance element, and a first magnetoresistance element. (2) An insulating layer covering the magnetoresistive element, and at least a first magnetic member of the second magnetic members different from the first magnetic member and the first magnetic member located on the insulating layer. The first magnetoresistive element has at least the outer periphery of the outer periphery and the inner periphery. The first magnetic member is located in an area inside the outer peripheral edge of the first magnetoresistive element as viewed in the direction orthogonal to the insulating layer. The second magnetoresistive element is located in a region inside the inner peripheral edge of the first magnetoresistive element and viewed from the direction perpendicular to the insulating layer, and is covered with the first magnetic member or the first magnetoresistive element The second magnetic member is located in a region outside the outer peripheral edge of the element. The first magnetic member is provided with a through groove or a through hole penetrating in a direction orthogonal to the insulating layer.
　本発明の一形態においては、絶縁層に直交する方向から見て、上記貫通孔は、第１磁性体部材の中央に設けられている。 In one aspect of the present invention, the through hole is provided at the center of the first magnetic member as viewed in the direction orthogonal to the insulating layer.
　本発明の一形態においては、絶縁層に直交する方向から見て、上記貫通孔は、円形状に設けられている。 In one aspect of the present invention, the through holes are provided in a circular shape when viewed in the direction orthogonal to the insulating layer.
　本発明の一形態においては、絶縁層に直交する方向から見て、上記貫通溝は、第１磁性体部材の中心を通過している。 In one aspect of the present invention, when viewed in the direction orthogonal to the insulating layer, the through groove passes through the center of the first magnetic member.
　本発明の一形態においては、絶縁層に直交する方向から見て、上記貫通溝は、直線状に延在している。 In one aspect of the present invention, the through groove extends in a straight line when viewed in the direction orthogonal to the insulating layer.
　本発明の一形態においては、第１磁性体部材に、絶縁層に直交する方向に貫通した、他の貫通溝がさらに設けられている。上記他の貫通溝は、絶縁層に直交する方向から見て、上記貫通溝と第１磁性体部材の中心で交差している。 In one aspect of the present invention, another through groove is further provided in the first magnetic member in a direction perpendicular to the insulating layer. The other through groove intersects the center of the first magnetic member with the through groove when viewed in the direction orthogonal to the insulating layer.
　本発明の一形態においては、絶縁層に直交する方向から見て、上記他の貫通溝は、直線状に延在している。 In one aspect of the present invention, the other through grooves extend in a straight line when viewed in the direction orthogonal to the insulating layer.
　本発明の一形態においては、第１磁性体部材の厚さをｘμｍとすると、第１磁気抵抗素子の少なくとも一部は、絶縁層に直交する方向から見て、第１磁性体部材の外周縁から内側に２μｍ離れた位置から、第１磁性体部材の外周縁から外側に下記式(Ｉ)で示すｙμｍ離れた位置までの、領域の少なくとも一部に位置している。
　ｙ＝－０．０００８ｘ２＋０．２４９５ｘ＋６．６５０６　(Ｉ) In one aspect of the present invention, assuming that the thickness of the first magnetic member is x μm, at least a part of the first magnetoresistive element is an outer peripheral edge of the first magnetic member when viewed from the direction orthogonal to the insulating layer. It is located in at least a part of a region from a position spaced 2 μm inward from the outer edge of the first magnetic member to a position spaced y μm away as shown in the following formula (I).
y = -0.0008x 2 + 0.2495x + 6.6506 (I)
　本発明の一形態においては、第１磁性体部材は、絶縁層に直交する方向から見て、第１磁気抵抗素子の外周縁と同心状に位置している。 In one aspect of the present invention, the first magnetic member is located concentrically with the outer peripheral edge of the first magnetoresistive element as viewed in the direction orthogonal to the insulating layer.
　本発明の一形態においては、第２磁気抵抗素子は、絶縁層に直交する方向から見て、第１磁気抵抗素子の内周縁より内側の領域に位置して第１磁性体部材で覆われている。第１磁性体部材は、絶縁層に直交する方向から見て、第１磁気抵抗素子の内周縁上および内周縁より内側の領域を含む領域に位置している。 In one aspect of the present invention, the second magnetoresistive element is covered with the first magnetic member and located in a region inside the inner peripheral edge of the first magnetoresistive element when viewed in the direction orthogonal to the insulating layer. There is. The first magnetic member is located in a region including the region on the inner peripheral edge of the first magnetoresistance element and the region inside the inner peripheral edge as viewed in the direction orthogonal to the insulating layer.
　本発明の一形態においては、第２磁気抵抗素子は、絶縁層に直交する方向から見て、第１磁気抵抗素子の内周縁より内側の領域に位置して第１磁性体部材で覆われている。第１磁性体部材は、絶縁層に直交する方向から見て、第１磁気抵抗素子および第２磁気抵抗素子のうちの第２磁気抵抗素子のみを覆っている。 In one aspect of the present invention, the second magnetoresistive element is covered with the first magnetic member and located in a region inside the inner peripheral edge of the first magnetoresistive element when viewed in the direction orthogonal to the insulating layer. There is. The first magnetic member covers only the second magnetoresistive element of the first magnetoresistive element and the second magnetoresistive element as viewed in the direction perpendicular to the insulating layer.
　本発明の一形態においては、第２磁気抵抗素子は、絶縁層に直交する方向から見て、第１磁性体部材の中心から、第１磁性体部材の外周縁から内側に７μｍ離れた位置までの、領域に位置している。 In one aspect of the present invention, the second magnetoresistive element is located at a position 7 μm away from the center of the first magnetic member from the outer peripheral edge of the first magnetic member as viewed in the direction orthogonal to the insulating layer. Is located in the area.
　本発明の一形態においては、第２磁気抵抗素子は、絶縁層に直交する方向から見て、第１磁気抵抗素子の外周縁より外側の領域に位置して第２磁性体部材で覆われている。第１磁性体部材は、絶縁層に直交する方向から見て、第１磁気抵抗素子および第２磁気抵抗素子のうちの第１磁気抵抗素子の一部のみを覆っている。 In one aspect of the present invention, the second magnetoresistive element is covered with the second magnetic member and located in a region outside the outer peripheral edge of the first magnetoresistive element when viewed in the direction orthogonal to the insulating layer. There is. The first magnetic member covers only a part of the first magnetoresistance element of the first and second magnetoresistance elements when viewed in the direction perpendicular to the insulating layer.
　本発明の一形態においては、第２磁性体部材は、絶縁層に直交する方向から見て、第１磁気抵抗素子および第２磁気抵抗素子のうちの第２磁気抵抗素子のみを覆っている。 In one aspect of the present invention, the second magnetic member covers only the second magnetoresistive element of the first magnetoresistive element and the second magnetoresistive element as viewed from the direction perpendicular to the insulating layer.
　本発明の一形態においては、第２磁気抵抗素子は、絶縁層に直交する方向から見て、第２磁性体部材の中心から、第２磁性体部材の外周縁から内側に７μｍ離れた位置までの、領域に位置している。 In one aspect of the present invention, the second magnetoresistive element is located at a position 7 μm away from the center of the second magnetic member from the outer peripheral edge of the second magnetic member as viewed in the direction orthogonal to the insulating layer. Is located in the area.
　本発明の一形態においては、第１磁気抵抗素子は、絶縁層に直交する方向から見て、同心状に配置されて互いに接続された複数の第１単位パターンを含む。 In one aspect of the present invention, the first magnetoresistive element includes a plurality of first unit patterns concentrically arranged and connected to each other when viewed in the direction orthogonal to the insulating layer.
　本発明の第３局面に基づく磁気センサは、感磁素子と、感磁素子を覆う絶縁層と、絶縁層上に位置する第１導電体部と、第１導電体部上に位置し、絶縁層に直交する方向から見て、第１導電体部を覆う第１磁性体部材とを備える。第１導電体部には、絶縁層に直交する方向に貫通した、貫通溝または貫通孔が設けられている。第１磁性体部材は、絶縁層に直交する方向から見て、上記貫通溝または上記貫通孔に沿って位置している。 A magnetic sensor according to a third aspect of the present invention includes a magnetosensitive element, an insulating layer covering the magnetosensitive element, a first conductor portion located on the insulating layer, and an insulating layer located on the first conductor portion And a first magnetic member covering the first conductor as viewed in the direction orthogonal to the layer. The first conductor portion is provided with a through groove or a through hole penetrating in a direction orthogonal to the insulating layer. The first magnetic member is located along the through groove or the through hole when viewed in the direction orthogonal to the insulating layer.
　本発明の一形態においては、感磁素子は、外周縁を有している。第１磁性体部材は、絶縁層に直交する方向から見て、感磁素子の外周縁より内側の領域に位置している。 In one aspect of the present invention, the magnetosensitive element has an outer peripheral edge. The first magnetic member is located in an area inside the outer peripheral edge of the magnetosensitive element when viewed in the direction orthogonal to the insulating layer.
　本発明によれば、磁気抵抗素子を用いて、水平磁界の検出の等方性が高く、微弱な垂直磁界も検出することができるとともに、磁気抵抗素子の上方に設けられた構造体から磁気抵抗素子に作用する応力によって磁気センサの出力精度が低下することを抑制できる。 According to the present invention, it is possible to use a magnetoresistive element to achieve high isotropy of detection of a horizontal magnetic field and also to detect a weak vertical magnetic field, and to provide magnetoresistive resistance from a structure provided above the magnetoresistive element. It can suppress that the output accuracy of a magnetic sensor falls by the stress which acts on an element.
本発明の実施形態１に係る磁気センサの構成を示す斜視図である。It is a perspective view which shows the structure of the magnetic sensor which concerns on Embodiment 1 of this invention. 図１の磁気センサをＩＩ－ＩＩ線矢印方向から見た断面図である。It is sectional drawing which looked at the magnetic sensor of FIG. 1 from the II-II line arrow direction. 図１の磁気センサを矢印ＩＩＩ方向から見た平面図である。It is the top view which looked at the magnetic sensor of FIG. 1 from the arrow III direction. 図１の磁気センサを矢印ＩＶ方向から見た平面図である。It is the top view which looked at the magnetic sensor of FIG. 1 from the arrow IV direction. 本発明の実施形態１に係る磁気センサの等価回路図である。It is an equivalent circuit schematic of the magnetic sensor which concerns on Embodiment 1 of this invention. 本発明の実施形態１に係る磁気センサの回路基板における磁気抵抗素子と配線との接続部の積層構造を示す断面図である。It is sectional drawing which shows the laminated structure of the connection part of the magnetoresistive element and wiring in the circuit board of the magnetic sensor which concerns on Embodiment 1 of this invention. 本発明の実施形態１に係る磁気センサの第１磁気抵抗素子のパターンを示す平面図である。It is a top view which shows the pattern of the 1st magnetoresistive element of the magnetic sensor which concerns on Embodiment 1 of this invention. 本発明の実施形態１に係る磁気センサの第２磁気抵抗素子のパターンを示す平面図である。It is a top view which shows the pattern of the 2nd magnetoresistive element of the magnetic sensor which concerns on Embodiment 1 of this invention. 実験例１に係る磁気センサに垂直磁界が印加された際の磁束密度分布を示す磁束線図である。FIG. 7 is a flux diagram showing a magnetic flux density distribution when a perpendicular magnetic field is applied to the magnetic sensor according to Experimental Example 1. 実験例１に係る磁気センサに水平磁界が印加された際の磁束密度分布を示す磁束線図である。FIG. 6 is a flux diagram showing a magnetic flux density distribution when a horizontal magnetic field is applied to the magnetic sensor according to Experimental Example 1. 実験例１に係る磁気センサに垂直磁界または水平磁界が印加された際の、第１磁性体部材の外周縁からの水平方向の距離と、水平方向の磁界強度との関係を示すグラフである。It is a graph which shows the relationship of the distance of the horizontal direction from the outer periphery of a 1st magnetic material member, and the magnetic field intensity of a horizontal direction when the perpendicular magnetic field or a horizontal magnetic field is applied to the magnetic sensor which concerns on Experimental example 1. FIG. 実験例２に係る磁気センサに垂直磁界が印加された際の、第１磁性体部材の外周縁からの水平方向の距離と水平方向の磁界強度との関係に与える、第１磁性体部材の厚さの影響を示すグラフである。The thickness of the first magnetic member given to the relationship between the distance in the horizontal direction from the outer peripheral edge of the first magnetic member and the magnetic field strength in the horizontal direction when the vertical magnetic field is applied to the magnetic sensor according to Experimental Example 2 Is a graph showing the effect of 水平方向の磁界強度がピーク値の１/３となる第１磁性体部材の外周縁から外側への水平方向の距離と、第１磁性体部材の厚さとの関係を示すグラフである。It is a graph which shows the relationship between the distance of the horizontal direction from the outer periphery of the 1st magnetic member to which the magnetic field intensity of the horizontal direction becomes 1/3 of a peak value to the outside, and the thickness of the 1st magnetic member. 本発明の実施形態２に係る磁気センサの構成を示す斜視図である。It is a perspective view which shows the structure of the magnetic sensor which concerns on Embodiment 2 of this invention. 図１４の磁気センサをＸＶ－ＸＶ線矢印方向から見た断面図である。FIG. 15 is a cross-sectional view of the magnetic sensor of FIG. 14 as viewed in the arrow direction of the XV-XV line. 図１４の磁気センサを矢印ＸＶＩ方向から見た平面図である。It is the top view which looked at the magnetic sensor of FIG. 14 from the arrow XVI direction. 本発明の実施形態３に係る磁気センサの構成を示す斜視図である。It is a perspective view which shows the structure of the magnetic sensor which concerns on Embodiment 3 of this invention. 図１７の磁気センサをＸＶＩＩＩ－ＸＶＩＩＩ線矢印方向から見た断面図である。FIG. 18 is a cross-sectional view of the magnetic sensor of FIG. 17 as viewed in the direction of arrows XVIII-XVIII. 図１７の磁気センサを矢印ＸＩＸ方向から見た平面図である。It is the top view which looked at the magnetic sensor of FIG. 17 from the arrow XIX direction. 本発明の実施形態４に係る磁気センサの構成を示す斜視図である。It is a perspective view which shows the structure of the magnetic sensor which concerns on Embodiment 4 of this invention. 図２０の磁気センサをＸＸＩ－ＸＸＩ線矢印方向から見た断面図である。FIG. 21 is a cross-sectional view of the magnetic sensor of FIG. 20 as viewed in the direction of the arrows along line XXI-XXI. 図２０の磁気センサを矢印ＸＸＩＩ方向から見た平面図である。It is the top view which looked at the magnetic sensor of FIG. 20 from the arrow XXII direction. 本発明の実施形態５に係る磁気センサの平面図である。It is a top view of the magnetic sensor concerning Embodiment 5 of the present invention. 本発明の実施形態５に係る磁気センサの第２磁気抵抗素子のパターンを示す平面図である。It is a top view which shows the pattern of the 2nd magnetoresistive element of the magnetic sensor which concerns on Embodiment 5 of this invention. 本発明の実施形態６に係る磁気センサの構成を示す斜視図である。It is a perspective view which shows the structure of the magnetic sensor which concerns on Embodiment 6 of this invention. 図２５の磁気センサをＸＸＶＩ－ＸＸＶＩ線矢印方向から見た断面図である。FIG. 26 is a cross-sectional view of the magnetic sensor of FIG. 25 as viewed in the direction of arrows XXVI-XXVI. 図２５の磁気センサを矢印ＸＸＶＩＩ方向から見た平面図である。It is the top view which looked at the magnetic sensor of FIG. 25 from the arrow XXVII direction. 図２５の磁気センサを矢印ＸＸＶＩＩＩ方向から見た平面図である。It is the top view which looked at the magnetic sensor of FIG. 25 from the arrow XXVIII direction. 本発明の実施形態６に係る磁気センサの第１磁気抵抗素子のパターンを示す平面図である。It is a top view which shows the pattern of the 1st magnetoresistive element of the magnetic sensor which concerns on Embodiment 6 of this invention. 本発明の実施形態６に係る磁気センサの第２磁気抵抗素子のパターンを示す平面図である。It is a top view which shows the pattern of the 2nd magnetoresistive element of the magnetic sensor which concerns on Embodiment 6 of this invention. 本発明の実施形態６に係る磁気センサの第２磁気抵抗素子のパターンに含まれる第２単位パターンを示す平面図である。It is a top view which shows the 2nd unit pattern contained in the pattern of the 2nd magnetoresistive element of the magnetic sensor concerning Embodiment 6 of this invention. 本発明の実施形態７に係る磁気センサの構成を示す斜視図である。It is a perspective view which shows the structure of the magnetic sensor which concerns on Embodiment 7 of this invention. 図３２の磁気センサを矢印ＸＸＸＩＩＩ方向から見た平面図である。It is the top view which looked at the magnetic sensor of FIG. 32 from the arrow XXXIII direction. 本発明の実施形態８に係る磁気センサの構成を示す平面図である。It is a top view which shows the structure of the magnetic sensor which concerns on Embodiment 8 of this invention. 本発明の実施形態８に係る磁気センサの第１磁気抵抗素子のパターンを示す平面図である。It is a top view which shows the pattern of the 1st magnetoresistive element of the magnetic sensor which concerns on Embodiment 8 of this invention. 本発明の実施形態８に係る磁気センサの第２磁気抵抗素子のパターンを示す平面図である。It is a top view which shows the pattern of the 2nd magnetoresistive element of the magnetic sensor which concerns on Embodiment 8 of this invention.
　以下、本発明の各実施形態に係る磁気センサについて図を参照して説明する。以下の実施形態の説明においては、図中の同一または相当部分には同一符号を付して、その説明は繰り返さない。 Hereinafter, the magnetic sensor according to each embodiment of the present invention will be described with reference to the drawings. In the following description of the embodiments, the same or corresponding portions in the drawings are denoted by the same reference characters, and the description thereof will not be repeated.
　(実施形態１)
　図１は、本発明の実施形態１に係る磁気センサの構成を示す斜視図である。図２は、図１の磁気センサをＩＩ－ＩＩ線矢印方向から見た断面図である。図３は、図１の磁気センサを矢印ＩＩＩ方向から見た平面図である。図４は、図１の磁気センサを矢印ＩＶ方向から見た平面図である。図５は、本発明の実施形態１に係る磁気センサの等価回路図である。 (Embodiment 1)
FIG. 1 is a perspective view showing the configuration of a magnetic sensor according to Embodiment 1 of the present invention. FIG. 2 is a cross-sectional view of the magnetic sensor of FIG. 1 as viewed in the direction of arrows II-II. FIG. 3 is a plan view of the magnetic sensor of FIG. 1 as viewed in the direction of arrow III. FIG. 4 is a plan view of the magnetic sensor of FIG. 1 as viewed in the direction of arrow IV. FIG. 5 is an equivalent circuit diagram of the magnetic sensor according to the first embodiment of the present invention.
　図１においては、後述する回路基板１００の幅方向をＸ軸方向、回路基板１００の長さ方向をＹ軸方向、回路基板１００の厚さ方向をＺ軸方向として示している。図４においては、後述する第１磁性体部材の外縁を点線で記載している。なお、図４においては、後述する差動増幅器および温度補償回路などの図示を省略している。 In FIG. 1, the width direction of the circuit board 100 described later is shown as the X-axis direction, the length direction of the circuit board 100 as the Y-axis direction, and the thickness direction of the circuit board 100 as the Z-axis direction. In FIG. 4, the outer edge of the first magnetic member to be described later is indicated by a dotted line. In FIG. 4, illustration of a differential amplifier, a temperature compensation circuit, and the like, which will be described later, is omitted.
　図１～図４に示すように、本発明の実施形態１に係る磁気センサ１は、回路基板１００と、回路基板１００の上方に設けられた２つの第１磁性体部材４０とを備える。本発明の実施形態１に係る磁気センサ１においては、回路基板１００上に２つの第１導電体部６０が設けられている。後述するように、回路基板１００の表層には、磁性体層１０を覆う絶縁層３０が設けられており、２つの第１導電体部６０は、絶縁層３０上に位置している。回路基板１００は、半導体基板１１０を含む。 As shown in FIGS. 1 to 4, the magnetic sensor 1 according to the first embodiment of the present invention includes a circuit board 100 and two first magnetic members 40 provided above the circuit board 100. In the magnetic sensor 1 according to the first embodiment of the present invention, two first conductor portions 60 are provided on the circuit board 100. As described later, the insulating layer 30 covering the magnetic layer 10 is provided on the surface layer of the circuit board 100, and the two first conductor portions 60 are located on the insulating layer 30. Circuit board 100 includes a semiconductor substrate 110.
　本実施形態においては、第１導電体部６０には、絶縁層３０に直交する方向であるＺ軸方向に貫通した、貫通孔６０ｈが設けられている。絶縁層３０に直交する方向であるＺ軸方向から見て、貫通孔６０ｈは、第１導電体部６０の中央に設けられている。絶縁層３０に直交する方向であるＺ軸方向から見て、貫通孔６０ｈは、円形状に設けられている。すなわち、第１導電体部６０は、円環状の形状を有している。 In the present embodiment, the first conductor portion 60 is provided with a through hole 60 h penetrating in the Z-axis direction which is a direction orthogonal to the insulating layer 30. The through hole 60 h is provided at the center of the first conductor portion 60 as viewed in the Z-axis direction which is a direction orthogonal to the insulating layer 30. When viewed from the Z-axis direction which is a direction orthogonal to the insulating layer 30, the through holes 60h are provided in a circular shape. That is, the first conductor portion 60 has an annular shape.
　２つの第１磁性体部材４０は、１対１で対応するように２つの第１導電体部６０上に位置している。第１磁性体部材４０は、絶縁層３０に直交する方向であるＺ軸方向から見て、対応する第１導電体部６０を覆っている。第１磁性体部材４０は、絶縁層３０に直交する方向から見て、貫通孔６０ｈに沿って位置している。すなわち、第１磁性体部材４０には、絶縁層３０に直交する方向に貫通した、貫通孔４０ｈが設けられている。絶縁層３０に直交する方向から見て、貫通孔４０ｈは、第１磁性体部材４０の中央に設けられている。絶縁層３０に直交する方向から見て、貫通孔４０ｈは、円形状に設けられている。第１磁性体部材４０は、円筒状の形状を有している。 The two first magnetic members 40 are located on the two first conductors 60 in a one-to-one correspondence. The first magnetic member 40 covers the corresponding first conductor portion 60 as viewed in the Z-axis direction which is a direction orthogonal to the insulating layer 30. The first magnetic member 40 is located along the through hole 60 h as viewed in the direction orthogonal to the insulating layer 30. That is, the first magnetic member 40 is provided with the through hole 40 h penetrating in the direction orthogonal to the insulating layer 30. The through hole 40 h is provided at the center of the first magnetic member 40 when viewed in the direction orthogonal to the insulating layer 30. When viewed in the direction orthogonal to the insulating layer 30, the through holes 40h are provided in a circular shape. The first magnetic member 40 has a cylindrical shape.
　第１磁性体部材４０と回路基板１００との間の距離を短くする観点から、第１導電体部６０のＺ軸方向の厚さ、すなわち、第１導電体部６０のＺ軸方向の厚さは、２．０μｍ以下であることが好ましい。第１磁性体部材４０と回路基板１００との間の距離が短いほど、後述する第１磁性体部材４０の磁気シールドとしての機能を確保することができる。第１導電体部６０の形成方法としては、レジストを用いたパターニングなどを用いることができる。 From the viewpoint of shortening the distance between the first magnetic member 40 and the circuit board 100, the thickness in the Z-axis direction of the first conductor portion 60, that is, the thickness in the Z-axis direction of the first conductor portion 60 Is preferably 2.0 μm or less. As the distance between the first magnetic member 40 and the circuit board 100 is shorter, the function of the first magnetic member 40 described later as a magnetic shield can be secured. As a method of forming the first conductor portion 60, patterning using a resist can be used.
　本実施形態においては、第１導電体部６０は、絶縁層３０上に位置し、チタン(Ｔｉ)を含む層と、チタン(Ｔｉ)を含む層の上に位置する、金(Ａｕ)を含む層とから構成されている。チタン(Ｔｉ)を含む層は密着層である。第１磁性体部材４０を電解めっきで形成する場合、金(Ａｕ)を含む層は電極反応層、すなわちシード層として機能する。第１導電体部６０の構成は、上記に限られず、めっきのシード層として機能する材料である、鉄(Ｆｅ)、モリブデン(Ｍｏ)、タンタル(Ｔａ)、白金(Ｐｔ)および銅(Ｃｕ)の少なくとも一つからなる層を含むものであってもよい。また、第１磁性体部材４０が蒸着などのめっき以外の方法で形成される場合には、金属および樹脂の少なくとも一方を含む他の導電体で構成されていてもよい。 In the present embodiment, the first conductor portion 60 includes gold (Au) located on the insulating layer 30 and located on the layer containing titanium (Ti) and the layer containing titanium (Ti) It is composed of layers. The layer containing titanium (Ti) is an adhesive layer. When the first magnetic member 40 is formed by electrolytic plating, a layer containing gold (Au) functions as an electrode reaction layer, that is, a seed layer. The configuration of the first conductor portion 60 is not limited to the above, and iron (Fe), molybdenum (Mo), tantalum (Ta), platinum (Pt) and copper (Cu), which are materials functioning as a seed layer for plating. And a layer comprising at least one of Moreover, when the 1st magnetic body member 40 is formed by methods other than plating, such as vapor deposition, you may be comprised with the other conductor containing at least one of a metal and resin.
　図４および図５に示すように、本発明の実施形態１に係る磁気センサ１の回路基板１００には、互いに配線によって電気的に接続されてホイートストンブリッジ型のブリッジ回路を構成する４つの磁気抵抗素子が設けられている。４つの磁気抵抗素子は、２組の第１磁気抵抗素子および第２磁気抵抗素子からなる。具体的には、磁気センサ１は、第１磁気抵抗素子１２０ａおよび第２磁気抵抗素子１３０ａと、第１磁気抵抗素子１２０ｂおよび第２磁気抵抗素子１３０ｂとを含んでいる。第１磁気抵抗素子１２０ａおよび第２磁気抵抗素子１３０ａは１つの組を構成している。第１磁気抵抗素子１２０ｂおよび第２磁気抵抗素子１３０ｂは１つの組を構成している。 As shown in FIG. 4 and FIG. 5, four magnetic resistances electrically connected to each other by wires to form a Wheatstone bridge type bridge circuit on the circuit board 100 of the magnetic sensor 1 according to the first embodiment of the present invention. An element is provided. The four magnetoresistance elements consist of two sets of first magnetoresistance elements and second magnetoresistance elements. Specifically, the magnetic sensor 1 includes a first magnetoresistance element 120a and a second magnetoresistance element 130a, and a first magnetoresistance element 120b and a second magnetoresistance element 130b. The first magnetoresistance element 120a and the second magnetoresistance element 130a constitute one set. The first magnetoresistance element 120 b and the second magnetoresistance element 130 b constitute one set.
　本実施形態においては、磁気センサ１は、２組の第１磁気抵抗素子および第２磁気抵抗素子を含んでいるが、これに限られず、少なくとも１組の第１磁気抵抗素子および第２磁気抵抗素子を含んでいればよい。磁気センサ１が、１組の第１磁気抵抗素子および第２磁気抵抗素子のみを含む場合には、回路基板１００にはハーフブリッジ回路が構成されている。 In the present embodiment, the magnetic sensor 1 includes the two sets of the first and second magnetoresistance elements, but the invention is not limited thereto, and at least one set of the first and second magnetoresistance elements. It is sufficient if the element is included. When the magnetic sensor 1 includes only one set of the first and second magnetoresistance elements, the circuit board 100 is configured with a half bridge circuit.
　第１磁気抵抗素子１２０ａ，１２０ｂおよび第２磁気抵抗素子１３０ａ，１３０ｂの各々は、ＡＭＲ(Anisotropic　Magneto　Resistance)素子である。なお、第１磁気抵抗素子１２０ａ，１２０ｂおよび第２磁気抵抗素子１３０ａ，１３０ｂの各々が、ＡＭＲ素子に代えて、ＧＭＲ(Giant　Magneto　Resistance)素子、ＴＭＲ(Tunnel　Magneto　Resistance)素子、ＢＭＲ(Ballistic　Magneto　Resistance)素子、ＣＭＲ(Colossal　Magneto　Resistance)素子などの磁気抵抗素子であってもよい。 Each of the first magnetoresistive elements 120a and 120b and the second magnetoresistive elements 130a and 130b is an AMR (Anisotropic Magneto Resistance) element. Note that each of the first magnetoresistance elements 120a and 120b and the second magnetoresistance elements 130a and 130b is replaced with an AMR element, and a GMR (Giant Magneto Resistance) element, a TMR (Tunnel Magneto Resistance) element, a BMR (Ballistic Magneto Resistance) Or a magnetoresistive element such as a CMR (Colossal Magneto Resistance) element.
　第２磁気抵抗素子１３０ａは、後述するように、第１磁性体部材４０によって磁気シールドされているためＺ軸方向の磁界(垂直磁界)とＸ軸方向およびＹ軸方向の磁界(水平磁界)をほとんど検出しない、いわゆる固定抵抗となる。第１磁気抵抗素子１２０ａは、外部磁界が印加されることによって電気抵抗値が変化するいわゆる感磁抵抗である。すなわち、第１磁気抵抗素子１２０ａは感磁素子として機能し、第２磁気抵抗素子１３０ａは感磁素子として機能しない。第２磁気抵抗素子１３０ａの外部磁界に対する抵抗変化率は、第１磁気抵抗素子１２０ａの外部磁界に対する抵抗変化率より低いことが好ましい。 As described later, since the second magnetoresistance element 130a is magnetically shielded by the first magnetic member 40, the magnetic field (vertical magnetic field) in the Z-axis direction and the magnetic field (horizontal magnetic field) in the X-axis direction and the Y-axis direction are It becomes so-called fixed resistance which hardly detects. The first magnetoresistance element 120 a is a so-called magnetosensitive resistance whose electric resistance value changes when an external magnetic field is applied. That is, the first magnetoresistance element 120a functions as a magnetosensitive element, and the second magnetoresistance element 130a does not function as a magnetosensitive element. The rate of change in resistance of the second magnetoresistance element 130a to the external magnetic field is preferably lower than the rate of change in resistance of the first magnetic resistance element 120a to the external magnetic field.
　同様に、第２磁気抵抗素子１３０ｂは、後述するように、第１磁性体部材４０によって磁気シールドされているためＺ軸方向の磁界(垂直磁界)とＸ軸方向およびＹ軸方向の磁界(水平磁界)をほとんど検出しない、いわゆる固定抵抗となる。第１磁気抵抗素子１２０ｂは、外部磁界が印加されることによって電気抵抗値が変化するいわゆる感磁抵抗である。すなわち、第１磁気抵抗素子１２０ｂは感磁素子として機能し、第２磁気抵抗素子１３０ｂは感磁素子として機能しない。第２磁気抵抗素子１３０ｂの外部磁界に対する抵抗変化率は、第１磁気抵抗素子１２０ｂの外部磁界に対する抵抗変化率より低いことが好ましい。 Similarly, as described later, since the second magnetoresistance element 130b is magnetically shielded by the first magnetic member 40, the magnetic field in the Z-axis direction (vertical magnetic field) and the magnetic field in the X-axis and Y-axis directions (horizontal It is a so-called fixed resistance that hardly detects the magnetic field. The first magnetoresistance element 120 b is a so-called magnetosensitive resistance whose electric resistance value changes when an external magnetic field is applied. That is, the first magnetoresistance element 120b functions as a magnetosensitive element, and the second magnetoresistance element 130b does not function as a magnetosensitive element. The rate of change in resistance of the second magnetoresistance element 130b to the external magnetic field is preferably lower than the rate of change in resistance of the first magnetic resistance element 120b to the external magnetic field.
　第１磁気抵抗素子１２０ａ，１２０ｂおよび第２磁気抵抗素子１３０ａ，１３０ｂは、半導体基板１１０上に設けられた配線によって互いに電気的に接続されている。具体的には、第１磁気抵抗素子１２０ａと第２磁気抵抗素子１３０ａとが配線１４６によって直列に接続されている。第１磁気抵抗素子１２０ｂと第２磁気抵抗素子１３０ｂとが配線１５０によって直列に接続されている。 The first magnetoresistive elements 120 a and 120 b and the second magnetoresistive elements 130 a and 130 b are electrically connected to each other by a wiring provided on the semiconductor substrate 110. Specifically, the first magnetoresistive element 120 a and the second magnetoresistive element 130 a are connected in series by the wire 146. The first magnetoresistance element 120 b and the second magnetoresistance element 130 b are connected in series by the wiring 150.
　回路基板１００の半導体基板１１０上には、中点１４０、中点１４１、電源端子(Ｖｃｃ)１４２、接地端子(Ｇｎｄ)１４３および出力端子(Ｏｕｔ)１４４がさらに設けられている。 On the semiconductor substrate 110 of the circuit board 100, a middle point 140, a middle point 141, a power supply terminal (Vcc) 142, a ground terminal (Gnd) 143 and an output terminal (Out) 144 are further provided.
　第１磁気抵抗素子１２０ａおよび第２磁気抵抗素子１３０ｂの各々は、中点１４０に接続されている。具体的には、第１磁気抵抗素子１２０ａと中点１４０とが配線１４５によって接続され、第２磁気抵抗素子１３０ｂと中点１４０とが配線１５２によって接続されている。 Each of the first magnetoresistance element 120 a and the second magnetoresistance element 130 b is connected to the middle point 140. Specifically, the first magnetoresistive element 120 a and the midpoint 140 are connected by the wire 145, and the second magnetoresistive element 130 b and the midpoint 140 are connected by the wire 152.
　第１磁気抵抗素子１２０ｂおよび第２磁気抵抗素子１３０ａの各々は、中点１４１に接続されている。具体的には、第１磁気抵抗素子１２０ｂと中点１４１とが配線１４９によって接続され、第２磁気抵抗素子１３０ａと中点１４１とが配線１４８によって接続されている。 Each of the first magnetoresistance element 120 b and the second magnetoresistance element 130 a is connected to the middle point 141. Specifically, the first magnetoresistive element 120 b and the midpoint 141 are connected by the wire 149, and the second magnetoresistive element 130 a and the midpoint 141 are connected by the wire 148.
　配線１４６は、電流が入力される電源端子(Ｖｃｃ)１４２に接続されている。配線１５０は、接地端子(Ｇｎｄ)１４３に接続されている。 The wiring 146 is connected to a power supply terminal (Vcc) 142 to which current is input. The wiring 150 is connected to the ground terminal (Gnd) 143.
　図５に示すように、磁気センサ１は、差動増幅器１６０、温度補償回路１６１、ラッチおよびスイッチ回路１６２、並びに、ＣＭＯＳ(Complementary　Metal　Oxide　Semiconductor)ドライバ１６３をさらに備える。差動増幅器１６０、温度補償回路１６１、ラッチおよびスイッチ回路１６２、並びに、ＣＭＯＳドライバ１６３の各々は、半導体基板１１０に設けられている。 As shown in FIG. 5, the magnetic sensor 1 further includes a differential amplifier 160, a temperature compensation circuit 161, a latch and switch circuit 162, and a complementary metal oxide semiconductor (CMOS) driver 163. Each of the differential amplifier 160, the temperature compensation circuit 161, the latch and switch circuit 162, and the CMOS driver 163 is provided on the semiconductor substrate 110.
　差動増幅器１６０は、入力端が中点１４０および中点１４１の各々に接続され、出力端が温度補償回路１６１に接続されている。また、差動増幅器１６０は、電源端子(Ｖｃｃ)１４２および接地端子(Ｇｎｄ)１４３の各々に接続されている。 The differential amplifier 160 has an input end connected to each of the midpoints 140 and 141 and an output end connected to the temperature compensation circuit 161. Also, the differential amplifier 160 is connected to each of the power supply terminal (Vcc) 142 and the ground terminal (Gnd) 143.
　温度補償回路１６１は、出力端がラッチおよびスイッチ回路１６２に接続されている。また、温度補償回路１６１は、電源端子(Ｖｃｃ)１４２および接地端子(Ｇｎｄ)１４３の各々に接続されている。 The output terminal of the temperature compensation circuit 161 is connected to the latch and switch circuit 162. Also, the temperature compensation circuit 161 is connected to each of the power supply terminal (Vcc) 142 and the ground terminal (Gnd) 143.
　ラッチおよびスイッチ回路１６２は、出力端がＣＭＯＳドライバ１６３に接続されている。また、ラッチおよびスイッチ回路１６２は、電源端子(Ｖｃｃ)１４２および接地端子(Ｇｎｄ)１４３の各々に接続されている。 An output end of the latch and switch circuit 162 is connected to the CMOS driver 163. The latch and switch circuit 162 is connected to each of the power supply terminal (Vcc) 142 and the ground terminal (Gnd) 143.
　ＣＭＯＳドライバ１６３は、出力端が出力端子(Ｏｕｔ)１４４に接続されている。また、ＣＭＯＳドライバ１６３は、電源端子(Ｖｃｃ)１４２および接地端子(Ｇｎｄ)１４３の各々に接続されている。 The output terminal of the CMOS driver 163 is connected to the output terminal (Out) 144. The CMOS driver 163 is connected to each of the power supply terminal (Vcc) 142 and the ground terminal (Gnd) 143.
　磁気センサ１が上記の回路構成を有することにより、中点１４０と中点１４１との間に、外部磁界の強さに依存する電位差が発生する。この電位差があらかじめ設定された検出レベルを超えると、出力端子(Ｏｕｔ)１４４から信号が出力される。 By having the above-described circuit configuration, the magnetic sensor 1 generates a potential difference depending on the strength of the external magnetic field between the midpoint 140 and the midpoint 141. When this potential difference exceeds a preset detection level, a signal is output from the output terminal (Out) 144.
　図６は、本発明の実施形態１に係る磁気センサの回路基板における磁気抵抗素子と配線との接続部の積層構造を示す断面図である。図６においては、磁気抵抗素子として機能する領域Ｒと、配線として機能する領域Ｌとの接続部のみ図示している。 FIG. 6 is a cross-sectional view showing the laminated structure of the connection portion between the magnetoresistive element and the wiring on the circuit board of the magnetic sensor according to Embodiment 1 of the present invention. In FIG. 6, only the connection between the region R functioning as a magnetoresistive element and the region L functioning as a wire is shown.
　図６に示すように、第１磁気抵抗素子１２０ａ，１２０ｂおよび第２磁気抵抗素子１３０ａ，１３０ｂの各々は、ＳｉＯ2層またはＳｉ3Ｎ4層などが表面に設けられた、Ｓｉなどからなる半導体基板１１０上に設けられている。第１磁気抵抗素子１２０ａ，１２０ｂおよび第２磁気抵抗素子１３０ａ，１３０ｂの各々は、半導体基板１１０上に設けられた、ＮｉとＦｅとを含む合金からなる磁性体層１０が、イオンミリング法によりパターニングされることにより形成されている。磁性体層１０の厚さは、たとえば、０．０４μｍである。 As shown in FIG. 6, each of the first magnetoresistance elements 120a and 120b and the second magnetoresistance elements 130a and 130b is a semiconductor made of Si or the like on the surface of which a SiO 2 layer or a Si 3 N 4 layer is provided. It is provided on the substrate 110. In each of the first magnetoresistance elements 120a and 120b and the second magnetoresistance elements 130a and 130b, the magnetic material layer 10 formed of an alloy containing Ni and Fe provided on the semiconductor substrate 110 is patterned by ion milling. It is formed by being done. The thickness of the magnetic layer 10 is, for example, 0.04 μm.
　配線１４５，１４６，１４８，１４９，１５０，１５２は、半導体基板１１０上に設けられた、ＡｕまたはＡｌなどからなる導電層２０が、ウエットエッチングによりパターニングされることにより形成されている。導電層２０は、配線として機能する領域Ｌにおいては磁性体層１０の真上に位置し、磁気抵抗素子として機能する領域Ｒには設けられていない。よって、図６に示すように、磁気抵抗素子として機能する領域Ｒと、配線として機能する領域Ｌとの接続部においては、導電層２０の端部が磁性体層１０の直上に位置している。 The wirings 145, 146, 148, 149, 150, and 152 are formed by patterning the conductive layer 20 provided on the semiconductor substrate 110 and made of Au or Al by wet etching. The conductive layer 20 is located immediately above the magnetic layer 10 in the region L functioning as a wire, and is not provided in the region R functioning as a magnetoresistive element. Therefore, as shown in FIG. 6, the end of the conductive layer 20 is located immediately above the magnetic layer 10 in the connection portion between the region R functioning as a magnetoresistive element and the region L functioning as a wire. .
　中点１４０、中点１４１、電源端子(Ｖｃｃ)１４２、接地端子(Ｇｎｄ)１４３および出力端子(Ｏｕｔ)１４４の各々は、半導体基板１１０の直上に位置する導電層２０によって構成されている。すなわち、中点１４０、中点１４１、電源端子(Ｖｃｃ)１４２、接地端子(Ｇｎｄ)１４３および出力端子(Ｏｕｔ)１４４の各々は、半導体基板１１０上に設けられたパッドである。 Each of middle point 140, middle point 141, power supply terminal (Vcc) 142, ground terminal (Gnd) 143 and output terminal (Out) 144 is formed of conductive layer 20 located directly above semiconductor substrate 110. That is, each of middle point 140, middle point 141, power supply terminal (Vcc) 142, ground terminal (Gnd) 143 and output terminal (Out) 144 is a pad provided on semiconductor substrate 110.
　導電層２０の直上には、図示しないＴｉ層が設けられている。磁性体層１０および導電層２０を覆うように、ＳｉＯ2などからなる絶縁層３０が設けられている。すなわち、絶縁層３０は、第１磁気抵抗素子１２０ａ，１２０ｂおよび第２磁気抵抗素子１３０ａ，１３０ｂを覆っている。 A Ti layer not shown is provided immediately above the conductive layer 20. An insulating layer 30 made of SiO 2 or the like is provided to cover the magnetic layer 10 and the conductive layer 20. That is, the insulating layer 30 covers the first magnetoresistive elements 120a and 120b and the second magnetoresistive elements 130a and 130b.
　図７は、本発明の実施形態１に係る磁気センサの第１磁気抵抗素子のパターンを示す平面図である。図４および図７に示すように、第１磁気抵抗素子１２０ａ，１２０ｂのパターン１２０は、絶縁層３０に直交する方向から見て、仮想円Ｃ1の円周に沿って仮想円Ｃ1の径方向に並ぶように配置されて互いに接続された４つの第１単位パターンを含む。なお、絶縁層３０に直交する方向はＺ軸方向であり、半導体基板１１０の上面に直交する方向と平行である。 FIG. 7 is a plan view showing a pattern of the first magnetoresistive element of the magnetic sensor according to Embodiment 1 of the present invention. As shown in FIGS. 4 and 7, the first magneto resistive element 120a, the pattern 120 and 120b, when viewed from a direction perpendicular to the insulating layer 30, the diameter of the virtual circle C 1 along the circumference of the virtual circle C 1 It includes four first unit patterns arranged in a direction and connected to each other. The direction orthogonal to the insulating layer 30 is the Z-axis direction, which is parallel to the direction orthogonal to the top surface of the semiconductor substrate 110.
　４つの第１単位パターンの各々は、仮想円Ｃ1の円周において配線１４６，１４８，１５０，１５２が位置する部分が開放した仮想Ｃ字形状Ｃ11に沿って位置している。４つの第１単位パターンの各々は、仮想Ｃ字形状Ｃ11に沿って仮想円Ｃ1の径方向に並ぶように同心円状に配置されたＣ字状パターン１２１である。 Each of the four first unit pattern is located along a virtual C-shaped C 11 a portion where the wiring 146,148,150,152 are located at the circumference of the virtual circle C 1 is opened. Each of the four first unit pattern is a C-shaped pattern 121 disposed concentrically so as to be arranged in a radial direction of the virtual circle C 1 along a virtual C-shaped C 11.
　４つのＣ字状パターン１２１は、仮想円Ｃ1の中心側から順に一端と他端とで交互に互いに接続されている。一端同士が接続されているＣ字状パターン１２１は、半円弧状パターン１２２によって互いに接続されている。他端同士が接続されているＣ字状パターン１２１は、半円弧状パターン１２３によって互いに接続されている。 Four C-shaped pattern 121 are connected to each other alternately from the center of the virtual circle C 1 and the one end and the other end in order. The C-shaped patterns 121 whose one ends are connected to each other are connected to each other by a semi-circular pattern 122. The C-shaped patterns 121 whose other ends are connected to each other are connected to each other by a semi-circular pattern 123.
　第１磁気抵抗素子１２０ａ，１２０ｂのパターン１２０は、２つの半円弧状パターン１２２および１つの半円弧状パターン１２３を含む。これにより、４つのＣ字状パターン１２１が直列に接続されている。半円弧状パターン１２２，１２３は、直線状延在部を含まず、湾曲部のみから構成されている。 The pattern 120 of the first magnetoresistance elements 120a and 120b includes two semicircular arc patterns 122 and one semicircular arc pattern 123. Thus, four C-shaped patterns 121 are connected in series. The semi-arc shaped patterns 122 and 123 do not include linear extending portions, and are formed only of curved portions.
　４つのＣ字状パターン１２１のうちの仮想円Ｃ1の中心から最も外側に位置するＣ字状パターンの、半円弧状パターン１２２と接続されていない側の端部は、導電層２０からなる配線１４５または配線１４９と接続されている。同様に、４つのＣ字状パターン１２１のうちの仮想円Ｃ1の中心から最も内側に位置するＣ字状パターンの、半円弧状パターン１２２と接続されていない側の端部は、導電層２０からなる配線１４６または配線１５０と接続されている。ここで、Ｃ字状パターン１２１の端部との接続位置となる導電層２０の形成位置を変更することにより、第１磁気抵抗素子１２０ａ，１２０ｂの電気抵抗値を調整することができる。 An end portion of the C-shaped pattern located on the outermost side from the center of the virtual circle C 1 among the four C-shaped patterns 121, the end portion not connected to the semi-circular pattern 122 is a wiring made of the conductive layer 20 It is connected to 145 or the wiring 149. Similarly, the virtual circle C 1 of the C-shaped pattern located on the innermost side from the center, the end portion on the side not connected to the semicircular pattern 122 of the four C-shaped pattern 121, the conductive layer 20 And the wiring 150 or 150. Here, the electric resistance value of the first magnetoresistance elements 120 a and 120 b can be adjusted by changing the formation position of the conductive layer 20 which is the connection position with the end of the C-shaped pattern 121.
　具体的には、図６に示す、磁気抵抗素子として機能する領域Ｒと、配線として機能する領域Ｌとの接続部において、導電層２０を磁気抵抗素子として機能する領域Ｒ側に延長することにより、配線として機能する領域Ｌを拡大して、第１磁気抵抗素子１２０ａ，１２０ｂの各々の電気抵抗値を低下させることができる。または、磁気抵抗素子として機能する領域Ｒと、配線として機能する領域Ｌとの接続部において、導電層２０を配線として機能する領域Ｌ側に短縮することにより、配線として機能する領域Ｌを縮小して、第１磁気抵抗素子１２０ａ，１２０ｂの各々の電気抵抗値を増加させることができる。 Specifically, in the connection portion between the region R functioning as a magnetoresistive element and the region L functioning as an interconnection shown in FIG. 6, the conductive layer 20 is extended to the region R functioning as a magnetoresistive element. The electric resistance value of each of the first magnetoresistance elements 120a and 120b can be reduced by enlarging the region L functioning as the wiring. Alternatively, in the connection portion between the region R functioning as a magnetoresistive element and the region L functioning as a wire, the conductive layer 20 is shortened to the region L functioning as a wire, thereby reducing the region L functioning as a wire. Thus, the electric resistance value of each of the first magnetoresistance elements 120a and 120b can be increased.
　上記の第１磁気抵抗素子１２０ａ，１２０ｂの電気抵抗値の調整は、導電層２０の一部を除去または追加形成することにより行なわれるため、絶縁層３０を設ける前に行なわれることが好ましい。 The adjustment of the electric resistance value of the first magnetoresistance elements 120a and 120b is performed by removing or additionally forming a part of the conductive layer 20. Therefore, the adjustment is preferably performed before the insulating layer 30 is provided.
　４つのＣ字状パターン１２１のうちの仮想円Ｃ1の中心から最も外側に位置するＣ字状パターン１２１の外周縁が、第１磁気抵抗素子１２０ａ，１２０ｂの外周縁となる。４つのＣ字状パターン１２１のうちの仮想円Ｃ1の中心から最も内側に位置するＣ字状パターン１２１の内周縁が、第１磁気抵抗素子１２０ａ，１２０ｂの内周縁となる。 Four of the outer peripheral edge of the C-shaped pattern 121 which is located outermost from the center of the virtual circle C 1 of the C-shaped pattern 121, the first magnetoresistive element 120a, the outer peripheral edge of 120b. The inner peripheral edge of the C-shaped pattern 121 located at the innermost side from the center of the virtual circle C 1 among the four C-shaped patterns 121 is the inner peripheral edge of the first magnetoresistance elements 120 a and 120 b.
　図４に示すように、第１磁気抵抗素子１２０ａと第１磁気抵抗素子１２０ｂとは、仮想Ｃ字形状Ｃ11の向きが互いに異なるように周方向の向きが異なっている。すなわち、第１磁気抵抗素子１２０ａと第１磁気抵抗素子１２０ｂとは、Ｃ字状パターン１２１の向きが互いに異なるように、パターン１２０の周方向の向きが異なっている。 As shown in FIG. 4, the first magnetoresistance element 120 a and the first magnetoresistance element 120 b have different circumferential directions such that the virtual C-shape C 11 has a different orientation. That is, the first magnetoresistance element 120 a and the first magnetoresistance element 120 b have different circumferential directions of the pattern 120 such that the C-shaped patterns 121 have different directions.
　本実施形態においては、第１磁気抵抗素子１２０ａと第１磁気抵抗素子１２０ｂとは、Ｃ字状パターン１２１の向きが互いに９０°異なるように、パターン１２０の周方向の向きが９０°異なっている。 In the present embodiment, the first magnetoresistive element 120 a and the first magnetoresistive element 120 b have the circumferential direction of the pattern 120 different by 90 ° such that the C-shaped patterns 121 are different from each other by 90 °. .
　図８は、本発明の実施形態１に係る磁気センサの第２磁気抵抗素子のパターンを示す平面図である。図４および図８に示すように、第２磁気抵抗素子１３０ａは、絶縁層３０に直交する方向から見て、仮想円Ｃ1の中心側に位置し、第１磁気抵抗素子１２０ａにより囲まれており、第２磁気抵抗素子１３０ｂは、絶縁層３０に直交する方向から見て、仮想円Ｃ1の中心側に位置し、第１磁気抵抗素子１２０ｂにより囲まれている。すなわち、第２磁気抵抗素子１３０ａは、絶縁層３０に直交する方向から見て、第１磁気抵抗素子１２０ａの内周縁より内側に位置しており、第２磁気抵抗素子１３０ｂは、絶縁層３０に直交する方向から見て、第１磁気抵抗素子１２０ｂの内周縁より内側に位置している。 FIG. 8 is a plan view showing a pattern of a second magnetoresistive element of the magnetic sensor according to Embodiment 1 of the present invention. As shown in FIGS. 4 and 8, the second magnetoresistance element 130a is seen from a direction perpendicular to the insulating layer 30, situated in the center of the virtual circle C 1, it is surrounded by a first magnetoresistive element 120a The second magnetoresistive element 130 b is located on the center side of the imaginary circle C 1 when viewed in the direction orthogonal to the insulating layer 30 and is surrounded by the first magnetoresistive element 120 b. That is, the second magnetoresistive element 130 a is located inside the inner peripheral edge of the first magnetoresistive element 120 a when viewed in the direction orthogonal to the insulating layer 30, and the second magnetoresistive element 130 b is located on the insulating layer 30. It is located inside the inner peripheral edge of the 1st magnetoresistive element 120b seeing from the orthogonal direction.
　第２磁気抵抗素子１３０ａは、仮想円Ｃ1の中心側から仮想円Ｃ1の外側まで設けられた導電層２０からなる配線１４６，１４８と接続されている。第２磁気抵抗素子１３０ｂは、仮想円Ｃ1の中心側から仮想円Ｃ1の外側まで設けられた導電層２０からなる配線１５０，１５２と接続されている。 Second magnetoresistance element 130a is connected to the wiring 146, 148 made of a conductive layer 20 provided from the central side of the imaginary circle C 1 to the outside of the virtual circle C 1. Second magnetoresistance element 130b is connected to the wiring 150, 152 made of a conductive layer 20 provided from the central side of the imaginary circle C 1 to the outside of the virtual circle C 1.
　第２磁気抵抗素子１３０ａ，１３０ｂは、絶縁層３０に直交する方向から見て、２重渦巻き状パターン１３０を有している。２重渦巻き状パターン１３０は、２つの第２単位パターンのうちの１つである一方の渦巻き状パターン１３１、２つの第２単位パターンのうちの他の１つである他方の渦巻き状パターン１３２、および、一方の渦巻き状パターン１３１と他方の渦巻き状パターン１３２とを２重渦巻き状パターン１３０の中央部にて接続する逆Ｓ字状パターン１３３を含む。逆Ｓ字状パターン１３３は、直線状延在部を含まず、湾曲部のみから構成されている。 The second magnetoresistance elements 130 a and 130 b have a double spiral pattern 130 when viewed in the direction orthogonal to the insulating layer 30. The double spiral pattern 130 has one spiral pattern 131 which is one of two second unit patterns, the other spiral pattern 132 which is the other one of two second unit patterns, And an inverted S-shaped pattern 133 connecting one spiral pattern 131 and the other spiral pattern 132 at the center of the double spiral pattern 130. The reverse S-shaped pattern 133 does not include a linear extending portion, and is formed only of a curved portion.
　２重渦巻き状パターン１３０は、パターン１２０と同じ太さで形成されている。従って、一方の渦巻き状パターン１３１および他方の渦巻き状パターン１３２の各々は、４つのＣ字状パターン１２１の各々と同じ太さである。 The double spiral pattern 130 is formed to have the same thickness as the pattern 120. Therefore, each of the one spiral pattern 131 and the other spiral pattern 132 has the same thickness as each of the four C-shaped patterns 121.
　図８に示すように、２重渦巻き状パターン１３０は、仮想円Ｃ1の中心に関して略点対称の形状を有している。すなわち、２重渦巻き状パターン１３０は、仮想円Ｃ1の中心に関して略１８０°回転対称な形状を有している。 As shown in FIG. 8, a double spiral pattern 130 has a shape substantially point-symmetrical with respect to the center of the virtual circle C 1. That is, the double spiral pattern 130 has a substantially 180 ° rotationally symmetrical shape with respect to the center of the virtual circle C 1.
　図４に示すように、第２磁気抵抗素子１３０ａと第２磁気抵抗素子１３０ｂとは、逆Ｓ字状パターン１３３の向きが互いに異なるように、２重渦巻き状パターン１３０の周方向の向きが異なっている。 As shown in FIG. 4, the second magnetoresistive element 130 a and the second magnetoresistive element 130 b have different circumferential directions of the double spiral pattern 130 such that the directions of the inverted S-shaped patterns 133 are different from each other. ing.
　本実施形態においては、第２磁気抵抗素子１３０ａと第２磁気抵抗素子１３０ｂとは、逆Ｓ字状パターン１３３の向きが互いに９０°異なるように、２重渦巻き状パターン１３０の周方向の向きが９０°異なっている。 In the present embodiment, the second magnetoresistive element 130 a and the second magnetoresistive element 130 b have a circumferential direction of the double spiral pattern 130 such that the directions of the inverted S-shaped patterns 133 are different from each other by 90 °. 90 ° different.
　本実施形態に係る磁気センサ１においては、第１磁気抵抗素子１２０ａ，１２０ｂがＣ字状パターン１２１を有している。Ｃ字状パターン１２１は、円弧で構成されている。互いに隣接したＣ字状パターン１２１同士は、半円弧状パターン１２２または半円弧状パターン１２３によって互いに接続されている。このように、第１磁気抵抗素子１２０ａ，１２０ｂは、直線状延在部を含んでいないため、磁界検出の異方性が低減されている。 In the magnetic sensor 1 according to the present embodiment, the first magnetoresistance elements 120 a and 120 b have a C-shaped pattern 121. The C-shaped pattern 121 is configured by an arc. The C-shaped patterns 121 adjacent to each other are connected to each other by a semi-circular pattern 122 or a semi-circular pattern 123. As described above, since the first magnetoresistance elements 120a and 120b do not include the linearly extending portions, the anisotropy of the magnetic field detection is reduced.
　さらに、本実施形態に係る磁気センサ１においては、第１磁気抵抗素子１２０ａのＣ字状パターン１２１の向きと第１磁気抵抗素子１２０ｂのＣ字状パターン１２１の向きとが互いに異なるように、パターン１２０の周方向の向きが異なっていることにより、磁界検出の等方性が高くなっている。 Furthermore, in the magnetic sensor 1 according to the present embodiment, the direction of the C-shaped pattern 121 of the first magnetoresistive element 120 a and the direction of the C-shaped pattern 121 of the first magnetoresistive element 120 b are different from each other. The different orientations of the circumferential direction 120 increase the isotropy of magnetic field detection.
　本実施形態に係る磁気センサ１においては、第２磁気抵抗素子１３０ａ，１３０ｂが２重渦巻き状パターン１３０を有している。２重渦巻き状パターン１３０は、主に略円弧状の湾曲部が巻き回されて構成されている。円弧は、多角形の角の数が無限大に大きくなった際の近似形であるため、２重渦巻き状パターン１３０を流れる電流の向きは、水平方向の略全方位(３６０°)に亘っている。なお、水平方向は、半導体基板１１０の上面と平行な方向である。 In the magnetic sensor 1 according to the present embodiment, the second magnetoresistance elements 130 a and 130 b have a double spiral pattern 130. The double spiral pattern 130 is mainly configured by winding a substantially arc-shaped curved portion. Since the arc is an approximation when the number of polygon corners increases to infinity, the direction of the current flowing through the double spiral pattern 130 extends in substantially all directions (360 °) in the horizontal direction. There is. The horizontal direction is a direction parallel to the top surface of the semiconductor substrate 110.
　また、本実施形態に係る磁気センサ１においては、２重渦巻き状パターン１３０は、中央部が湾曲部のみからなる逆Ｓ字状パターン１３３で構成されている。このように、第２磁気抵抗素子１３０ａ，１３０ｂは、直線状延在部を含んでいないため、磁気抵抗効果の異方性が低減されている。 Further, in the magnetic sensor 1 according to the present embodiment, the double spiral pattern 130 is configured by an inverted S-shaped pattern 133 in which the central portion is formed of only a curved portion. As described above, since the second magnetoresistance elements 130a and 130b do not include the linearly extending portions, the anisotropy of the magnetoresistance effect is reduced.
　さらに、本実施形態に係る磁気センサ１においては、第２磁気抵抗素子１３０ａおよび第２磁気抵抗素子１３０ｂの逆Ｓ字状パターン１３３の向きが互いに異なるように、２重渦巻き状パターン１３０の周方向の向きが異なっていることにより、磁気抵抗効果の等方性が高くなっている。 Furthermore, in the magnetic sensor 1 according to the present embodiment, the circumferential direction of the double spiral pattern 130 is such that the directions of the reverse S-shaped patterns 133 of the second magnetoresistance element 130a and the second magnetoresistance element 130b are different from each other. Due to the different orientations, the isotropy of the magnetoresistance effect is enhanced.
　その理由は以下の通りである。上記のように、２重渦巻き状パターン１３０は、仮想円Ｃ1の中心に関して略１８０°回転対称な形状を有している。そのため、第２磁気抵抗素子１３０ａおよび第２磁気抵抗素子１３０ｂの各々は、僅かに磁気抵抗効果の異方性を有する。 The reason is as follows. As described above, the double spiral pattern 130 has a substantially 180 ° rotationally symmetrical shape with respect to the center of the virtual circle C 1. Therefore, each of the second magnetoresistance element 130a and the second magnetoresistance element 130b has a slight anisotropy of magnetoresistance effect.
　そこで、第２磁気抵抗素子１３０ａの２重渦巻き状パターン１３０の周方向の向きと、第２磁気抵抗素子１３０ｂの２重渦巻き状パターン１３０の周方向の向きとを異ならせることにより、それぞれの磁気抵抗効果の異方性を互いに低減することができる。 Therefore, the magnetic direction of the double spiral pattern 130 of the second magnetoresistance element 130a is different from the direction of the circumferential direction of the double spiral pattern 130 of the second magnetoresistance element 130b. The anisotropy of the resistance effect can be reduced to one another.
　第２磁気抵抗素子１３０ａの２重渦巻き状パターン１３０の周方向の向きと、第２磁気抵抗素子１３０ｂの２重渦巻き状パターン１３０の周方向の向きとを９０°異ならせた場合には、それぞれの磁気抵抗効果の異方性を最も低減することができる。 When the circumferential direction of the double spiral pattern 130 of the second magnetoresistance element 130a and the circumferential direction of the double spiral pattern 130 of the second magnetoresistance element 130b differ by 90 °, respectively. The anisotropy of the magnetoresistance effect can be most reduced.
　この場合は、第２磁気抵抗素子１３０ａが最も高感度である方向と、第２磁気抵抗素子１３０ｂが最も低感度である方向とが一致し、第２磁気抵抗素子１３０ａが最も低感度である方向と、第２磁気抵抗素子１３０ｂが最も高感度である方向とが一致する。そのため、磁気センサ１に外部磁界が印加された際に中点１４０と中点１４１との間に発生する電位差が、磁気センサ１に外部磁界が印加された方向によって変動することを抑制できる。 In this case, the direction in which the second magnetoresistance element 130a is the highest sensitivity matches the direction in which the second magnetoresistance element 130b is the lowest sensitivity, and the direction in which the second magnetoresistance element 130a is the lowest sensitivity. And the direction in which the second magnetoresistance element 130 b has the highest sensitivity coincide with each other. Therefore, the potential difference generated between the midpoint 140 and the midpoint 141 when the external magnetic field is applied to the magnetic sensor 1 can be suppressed from fluctuating depending on the direction in which the external magnetic field is applied to the magnetic sensor 1.
　２重渦巻き状パターン１３０は、単位面積当たりの密度が高い形状である。第２磁気抵抗素子１３０ａ，１３０ｂが２重渦巻き状パターン１３０を有することにより、仮想円Ｃ1内に配置されるパターンを長くして、第２磁気抵抗素子１３０ａ，１３０ｂを高抵抗にすることができる。第２磁気抵抗素子１３０ａ，１３０ｂの電気抵抗値が高いほど、磁気センサ１の消費電流を低減できる。 The double spiral pattern 130 has a high density per unit area. The second magnetoresistance elements 130a and 130b having the double spiral pattern 130 make the pattern disposed in the imaginary circle C 1 longer to make the second magnetoresistance elements 130a and 130b have high resistance. it can. The current consumption of the magnetic sensor 1 can be reduced as the electric resistance value of the second magnetoresistance elements 130a and 130b is higher.
　上記のように、２重渦巻き状パターン１３０を流れる電流の向きを水平方向において分散させて、第２磁気抵抗素子１３０ａおよび第２磁気抵抗素子１３０ｂの各々の磁気抵抗効果の異方性を低減することにより、外部磁界が０である時の磁気センサ１の出力が、残留磁化の影響によってばらつくことを抑制することができる。 As described above, the direction of the current flowing through the double spiral pattern 130 is dispersed in the horizontal direction to reduce the anisotropy of the magnetoresistance effect of each of the second magnetoresistance element 130a and the second magnetoresistance element 130b. Thus, the output of the magnetic sensor 1 when the external magnetic field is zero can be suppressed from being dispersed due to the influence of the residual magnetization.
　なお、２重渦巻き状パターン１３０は逆方向に巻いていてもよく、この場合、２重渦巻き状パターン１３０の中央部が湾曲部のみからなるＳ字状パターンで構成される。すなわち、一方の渦巻き状パターンと他方の渦巻き状パターンとが、Ｓ字状パターンによって接続される。 The double spiral pattern 130 may be wound in the opposite direction, and in this case, the central portion of the double spiral pattern 130 is an S-shaped pattern formed of only a curved portion. That is, one spiral pattern and the other spiral pattern are connected by the S-shaped pattern.
　本実施形態に係る磁気センサ１においては、第１磁気抵抗素子１２０ａ，１２０ｂの内側に第２磁気抵抗素子１３０ａ，１３０ｂを配置しているため、磁気センサ１を小形にできる。また、磁気センサ１においては、第１磁気抵抗素子１２０ａ，１２０ｂと第２磁気抵抗素子１３０ａ，１３０ｂとを接続する配線を立体的に引き回す必要がないため、簡易な製造プロセスで回路基板１００を製造可能である。 In the magnetic sensor 1 according to the present embodiment, since the second magnetoresistance elements 130a and 130b are disposed inside the first magnetoresistance elements 120a and 120b, the magnetic sensor 1 can be miniaturized. Further, in the magnetic sensor 1, the circuit board 100 is manufactured by a simple manufacturing process because it is not necessary to three-dimensionally draw the wiring connecting the first magnetoresistance elements 120a and 120b and the second magnetoresistance elements 130a and 130b. It is possible.
　本実施形態に係る磁気センサ１においては、絶縁層３０の上方に２つの第１磁性体部材４０が設けられており、２つの第１磁性体部材４０はＹ軸方向に並んで配置されている。第１磁性体部材４０の厚さｘは、たとえば、１０μｍ以上、好ましくは、２０μｍ以上１５０μｍ以下である。第１磁性体部材４０の厚さｘが１０μｍ以上の場合、後述するように、第１磁性体部材４０によって略水平方向に偏向された垂直磁界を、第１磁気抵抗素子１２０ａ，１２０ｂにて検出できる。第１磁性体部材４０の厚さｘが２０μｍ以上の場合、第１磁性体部材４０によって垂直磁界を略水平方向により効果的に偏向できるため、第１磁気抵抗素子１２０ａ，１２０ｂにて、より微弱な垂直磁界を検出できる。第１磁性体部材４０の厚さｘが１５０μｍ以下の場合、第１磁性体部材４０の形成時間が長くなることを抑制して、磁気センサ１の量産性を維持できる。 In the magnetic sensor 1 according to the present embodiment, two first magnetic members 40 are provided above the insulating layer 30, and the two first magnetic members 40 are arranged side by side in the Y-axis direction. . The thickness x of the first magnetic member 40 is, for example, 10 μm or more, preferably 20 μm or more and 150 μm or less. When the thickness x of the first magnetic member 40 is 10 μm or more, the first magnetic resistance elements 120 a and 120 b detect a perpendicular magnetic field deflected in a substantially horizontal direction by the first magnetic member 40 as described later. it can. When the thickness x of the first magnetic member 40 is 20 μm or more, the perpendicular magnetic field can be effectively deflected by the first magnetic member 40 in the substantially horizontal direction, so that the first magnetoresistive elements 120a and 120b are weaker Vertical magnetic field can be detected. When the thickness x of the first magnetic member 40 is 150 μm or less, it is possible to maintain the mass productivity of the magnetic sensor 1 by suppressing an increase in the formation time of the first magnetic member 40.
　図４に示すように、第１磁性体部材４０は、絶縁層３０に直交する方向から見て、円形の外形を有し、かつ、第１磁気抵抗素子１２０ａ，１２０ｂの外周縁より内側の領域に位置している。なお、第１磁気抵抗素子１２０ａ，１２０ｂの外周縁より内側の領域とは、絶縁層３０に直交する方向から見て、第１磁気抵抗素子１２０ａ，１２０ｂの外周縁の両端を仮想直線で結んだ際に囲まれる領域である。絶縁層３０に直交する方向から見て、第１磁気抵抗素子１２０ａ，１２０ｂの外周縁より内側の領域と、第１磁性体部材４０の半分以上が重なっていることが好ましく、第１磁性体部材４０の２/３以上が重なっていることがより好ましい。 As shown in FIG. 4, the first magnetic member 40 has a circular outer shape when viewed in the direction orthogonal to the insulating layer 30 and is a region inside the outer peripheral edge of the first magnetoresistance elements 120 a and 120 b. It is located in Note that, with respect to the region inside the outer peripheral edge of the first magnetoresistance elements 120a and 120b, both ends of the outer peripheral edge of the first magnetoresistance elements 120a and 120b are connected by imaginary straight lines when viewed from the direction orthogonal to the insulating layer 30. It is an area surrounded by It is preferable that a region inside the outer peripheral edge of the first magnetoresistance elements 120a and 120b and a half or more of the first magnetic member 40 overlap with each other when viewed from the direction orthogonal to the insulating layer 30, and the first magnetic member More preferably, 2/3 or more of 40 overlap.
　本実施形態においては、第１磁性体部材４０は、絶縁層３０に直交する方向から見て、第１磁気抵抗素子１２０ａ，１２０ｂの内周縁より内側の領域に位置している。なお、第１磁気抵抗素子１２０ａ，１２０ｂの内周縁より内側の領域とは、絶縁層３０に直交する方向から見て、第１磁気抵抗素子１２０ａ，１２０ｂの内周縁の両端を仮想直線で結んだ際に囲まれる領域である。第１磁性体部材４０は、絶縁層３０に直交する方向から見て、第１磁気抵抗素子１２０ａ，１２０ｂの内周縁上および内周縁より内側の領域を含む領域に位置していてもよい。絶縁層３０に直交する方向から見て、第１磁気抵抗素子１２０ａ，１２０ｂの内周縁より内側の領域と、第１磁性体部材４０の半分以上が重なっていることが好ましく、第１磁性体部材４０の２/３以上が重なっていることがより好ましい。 In the present embodiment, the first magnetic member 40 is located in a region inside the inner peripheral edge of the first magnetoresistive elements 120 a and 120 b when viewed from the direction orthogonal to the insulating layer 30. Note that with the region inside the inner peripheral edge of the first magnetoresistance elements 120a and 120b, both ends of the inner peripheral edge of the first magnetoresistance elements 120a and 120b are connected by imaginary straight lines when viewed from the direction orthogonal to the insulating layer 30. It is an area surrounded by The first magnetic member 40 may be located in a region including the region on the inner peripheral edge of the first magnetoresistance elements 120 a and 120 b and the region inside the inner peripheral edge as viewed from the direction orthogonal to the insulating layer 30. It is preferable that a region inside the inner peripheral edge of the first magnetoresistance elements 120a and 120b and a half or more of the first magnetic member 40 overlap with each other when viewed from the direction orthogonal to the insulating layer 30, and the first magnetic member More preferably, 2/3 or more of 40 overlap.
　本実施形態においては、第１磁性体部材４０は、絶縁層３０に直交する方向から見て、第１磁気抵抗素子１２０ａ，１２０ｂの外周縁と同心状に位置している。 In the present embodiment, the first magnetic member 40 is concentric with the outer peripheral edge of the first magnetoresistance elements 120 a and 120 b when viewed from the direction orthogonal to the insulating layer 30.
　本実施形態においては、第１磁性体部材４０は、絶縁層３０に直交する方向から見て、第１磁気抵抗素子１２０ａ，１２０ｂおよび第２磁気抵抗素子１３０ａ，１３０ｂのうちの第２磁気抵抗素子１３０ａ，１３０ｂのみを覆っている。よって、絶縁層３０に直交する方向から見て、第１磁性体部材４０は、第１磁気抵抗素子１２０ａ，１２０ｂに囲まれている。第１磁性体部材４０は、電磁鋼、軟鉄鋼、ケイ素鋼、パーマロイ、スーパーマロイ、ニッケル合金、鉄合金またはフェライトなどの、透磁率および飽和磁束密度の高い磁性体材料で構成されている。また、これらの磁性体材料は、保磁力が低いことが好ましい。 In the present embodiment, the first magnetic member 40 is a second magnetoresistive element of the first magnetoresistive elements 120 a and 120 b and the second magnetoresistive elements 130 a and 130 b when viewed from the direction orthogonal to the insulating layer 30. It covers only 130a and 130b. Therefore, when viewed from the direction orthogonal to the insulating layer 30, the first magnetic member 40 is surrounded by the first magnetoresistive elements 120a and 120b. The first magnetic member 40 is made of a magnetic material having high magnetic permeability and high saturation magnetic flux density, such as electromagnetic steel, mild steel, silicon steel, permalloy, supermalloy, nickel alloy, iron alloy or ferrite. In addition, these magnetic materials preferably have low coercivity.
　第１磁性体部材４０を構成する磁性体材料として、透磁率が、高温で大きくなり、低温で小さくなる、たとえば、Ｆｅ－７８Ｎｉ合金などを用いた場合、第１磁気抵抗素子１２０ａ，１２０ｂの抵抗変化率の温度依存性を低減することができる。 As the magnetic material forming the first magnetic member 40, the magnetic permeability increases at high temperatures and decreases at low temperatures. For example, when using an Fe-78 Ni alloy or the like, the resistance of the first magnetoresistance elements 120a and 120b The temperature dependency of the rate of change can be reduced.
　第１磁性体部材４０は、たとえば、めっきにより形成される。なお、絶縁層３０と第１磁性体部材４０との間に、他の薄層が設けられていてもよい。 The first magnetic member 40 is formed, for example, by plating. Another thin layer may be provided between the insulating layer 30 and the first magnetic member 40.
　ここで、第１磁性体部材４０が垂直磁界および水平磁界の分布に及ぼす影響をシミュレーションにより検証した実験例１について説明する。実験例１においては、第１磁性体部材４０の外形を、直径が１４０μｍ、厚さｘが１００μｍの円柱状とした。第１磁性体部材４０は、パーマロイで構成した。第１磁性体部材４０を、第２磁気抵抗素子１３０ａ，１３０ｂの上方にて、第１磁気抵抗素子１２０ａ，１２０ｂおよび第２磁気抵抗素子１３０ａ，１３０ｂのうちの第２磁気抵抗素子１３０ａ，１３０ｂのみを覆うように配置した。絶縁層３０に直交する方向から見て、第１磁気抵抗素子１２０ａ，１２０ｂの内周縁が、第１磁性体部材４０の外周縁の外側に隣接するように、第１磁性体部材４０を配置した。印加する垂直磁界または水平磁界の強度は、３０ｍＴとした。 Here, an experimental example 1 will be described in which the influence of the first magnetic member 40 on the distribution of the vertical magnetic field and the horizontal magnetic field is verified by simulation. In Experimental Example 1, the outer shape of the first magnetic member 40 was a cylindrical shape having a diameter of 140 μm and a thickness x of 100 μm. The first magnetic member 40 was made of permalloy. In the first magnetic member 40, above the second magnetoresistance elements 130a and 130b, only the second magnetoresistance elements 130a and 130b of the first magnetoresistance elements 120a and 120b and the second magnetoresistance elements 130a and 130b. Placed to cover the The first magnetic member 40 is disposed such that the inner peripheral edge of the first magnetoresistance elements 120 a and 120 b is adjacent to the outer peripheral edge of the first magnetic member 40 when viewed in the direction orthogonal to the insulating layer 30. . The strength of the applied vertical magnetic field or horizontal magnetic field was 30 mT.
　図９は、実験例１に係る磁気センサに垂直磁界が印加された際の磁束密度分布を示す磁束線図である。図１０は、実験例１に係る磁気センサに水平磁界が印加された際の磁束密度分布を示す磁束線図である。図１１は、実験例１に係る磁気センサに垂直磁界または水平磁界が印加された際の、第１磁性体部材の外周縁からの水平方向の距離と、水平方向の磁界強度との関係を示すグラフである。図９および図１０においては、磁気センサ１を水平方向から見て、第１磁性体部材４０、第１磁気抵抗素子１２０ａ，１２０ｂおよび第２磁気抵抗素子１３０ａ，１３０ｂのみを図示している。 FIG. 9 is a flux diagram showing a magnetic flux density distribution when a perpendicular magnetic field is applied to the magnetic sensor according to Experimental Example 1. FIG. 10 is a magnetic flux diagram showing a magnetic flux density distribution when a horizontal magnetic field is applied to the magnetic sensor according to Experimental Example 1. FIG. 11 shows the relationship between the distance in the horizontal direction from the outer peripheral edge of the first magnetic member and the magnetic field strength in the horizontal direction when a vertical magnetic field or a horizontal magnetic field is applied to the magnetic sensor according to Experimental Example 1. It is a graph. 9 and 10, only the first magnetic member 40, the first magnetoresistive elements 120a and 120b, and the second magnetoresistive elements 130a and 130b are illustrated when the magnetic sensor 1 is viewed from the horizontal direction.
　図１１においては、縦軸に水平方向の磁界強度(ｍＴ)、横軸に第１磁性体部材の外周縁からの水平方向の距離(μｍ)を示している。第１磁性体部材の外周縁からの水平方向の距離は、第１磁性体部材４０の外周縁から外側に離れた距離を正の値、第１磁性体部材４０の外周縁から内側に離れた距離を負の値で示している。垂直磁界が印加された際の水平方向の磁界強度の分布を実線Ｖで、水平磁界が印加された際の水平方向の磁界強度の分布を実線Ｈで示している。 In FIG. 11, the vertical axis indicates the magnetic field strength (mT) in the horizontal direction, and the horizontal axis indicates the horizontal distance (μm) from the outer peripheral edge of the first magnetic member. The distance in the horizontal direction from the outer peripheral edge of the first magnetic member is a positive distance from the outer peripheral edge of the first magnetic member 40, and the distance from the outer peripheral edge of the first magnetic member 40 to the inner side The distance is indicated by a negative value. The distribution of the magnetic field intensity in the horizontal direction when the perpendicular magnetic field is applied is indicated by a solid line V, and the distribution of the magnetic field intensity in the horizontal direction when a horizontal magnetic field is applied is indicated by a solid line H.
　図９に示すように、実験例１に係る磁気センサに上方から下方に向かう垂直磁界を印加した場合、第１磁性体部材４０の上面側において、透磁率の高い第１磁性体部材４０に磁束が引き寄せられて集められた。第１磁性体部材４０に進入した磁束は、第１磁性体部材４０を垂直方向に通過した後、第１磁性体部材４０の下面側から、拡散しつつ放出された。 As shown in FIG. 9, when a vertical magnetic field directed downward from above is applied to the magnetic sensor according to Experimental Example 1, the magnetic flux is applied to the first magnetic member 40 having high permeability on the upper surface side of the first magnetic member 40. Were attracted and collected. The magnetic flux that has entered the first magnetic member 40 passes through the first magnetic member 40 in the vertical direction, and then is diffused and emitted from the lower surface side of the first magnetic member 40.
　このとき、第１磁性体部材４０の直下に位置する第２磁気抵抗素子１３０ａ，１３０ｂには、磁界が略垂直方向に印加された。そのため、第２磁気抵抗素子１３０ａ，１３０ｂは、垂直磁界をほとんど検出しなかった。一方、第１磁性体部材４０の外周縁の下方に位置する第１磁気抵抗素子１２０ａ，１２０ｂには、図９中の矢印で示すように略水平方向に偏向された磁界が印加された。そのため、第１磁気抵抗素子１２０ａ，１２０ｂは、垂直磁界を略水平方向に偏向された磁界として検出することができた。 At this time, a magnetic field was applied to the second magnetoresistance elements 130 a and 130 b positioned directly below the first magnetic member 40 in a substantially perpendicular direction. Therefore, the second magnetoresistance elements 130a and 130b hardly detect the perpendicular magnetic field. On the other hand, to the first magnetoresistance elements 120a and 120b located below the outer peripheral edge of the first magnetic member 40, a magnetic field deflected in a substantially horizontal direction was applied as shown by the arrows in FIG. Therefore, the first magnetoresistance elements 120a and 120b could detect the vertical magnetic field as a magnetic field deflected in the substantially horizontal direction.
　図１０に示すように、実験例１に係る磁気センサに左側から右側に向かう水平磁界を印加した場合、第１磁性体部材４０の左側面側において、第１磁性体部材４０に磁束が引き寄せられて集められた。第１磁性体部材４０に進入した磁束は、第１磁性体部材４０を水平方向に通過した後、第１磁性体部材４０の右側面側から、拡散しつつ放出された。 As shown in FIG. 10, when a horizontal magnetic field from left to right is applied to the magnetic sensor according to Experimental Example 1, the magnetic flux is drawn to the first magnetic member 40 on the left side of the first magnetic member 40. It was collected. The magnetic flux that has entered the first magnetic member 40 passes through the first magnetic member 40 in the horizontal direction, and then is diffused and emitted from the right side of the first magnetic member 40.
　このとき、図１０中の矢印で示すように、第１磁性体部材４０の直下に位置する第２磁気抵抗素子１３０ａ，１３０ｂには、水平方向の磁界がほとんど印加されなかった。そのため、第２磁気抵抗素子１３０ａ，１３０ｂは、水平磁界をほとんど検出しなかった。一方、第１磁性体部材４０の外周縁の下方に位置する第１磁気抵抗素子１２０ａ，１２０ｂには、水平方向の磁界が印加された。そのため、第１磁気抵抗素子１２０ａ，１２０ｂは、水平磁界を検出することができた。 At this time, as shown by the arrow in FIG. 10, the magnetic field in the horizontal direction was hardly applied to the second magnetoresistance elements 130a and 130b located immediately below the first magnetic member 40. Therefore, the second magnetoresistance elements 130a and 130b hardly detect the horizontal magnetic field. On the other hand, a magnetic field in the horizontal direction was applied to the first magnetoresistance elements 120 a and 120 b located below the outer peripheral edge of the first magnetic member 40. Therefore, the first magnetoresistance elements 120a and 120b could detect the horizontal magnetic field.
　図１１に示すように、第１磁性体部材４０の外周縁の外側の位置における水平方向の磁界強度が、印加した垂直磁界または水平磁界の強度である３０ｍＴより高い領域が生じていた。具体的には、垂直磁界を印加した場合においては、第１磁性体部材４０の外周縁から内側に約２μｍ離れた位置から、第１磁性体部材４０の外周縁から外側に約１０μｍ離れた位置まで、水平方向の磁界強度が、印加した垂直磁界の強度である３０ｍＴより高くなっていた。また、水平磁界を印加した場合においても、第１磁性体部材４０の外周縁の外側の位置では、水平方向の磁界強度が、印加した水平磁界の強度である３０ｍＴより高くなっていた。これらは、第１磁性体部材４０に引き寄せられて集められた磁界が、高い磁界強度で第１磁性体部材４０から水平方向に放出されたためである。この高い磁界強度の水平方向の磁界が、第１磁気抵抗素子１２０ａ，１２０ｂに印加された。 As shown in FIG. 11, the region where the horizontal magnetic field strength at the position outside the outer peripheral edge of the first magnetic member 40 is higher than 30 mT, which is the strength of the applied vertical magnetic field or horizontal magnetic field, has occurred. Specifically, when a perpendicular magnetic field is applied, a position about 10 μm away from the outer peripheral edge of the first magnetic member 40 from a position about 2 μm away inwardly from the outer periphery of the first magnetic member 40 Up to the horizontal magnetic field strength was higher than 30 mT, which is the strength of the applied vertical magnetic field. Further, even when the horizontal magnetic field is applied, the magnetic field strength in the horizontal direction is higher than 30 mT which is the strength of the applied horizontal magnetic field at the position outside the outer peripheral edge of the first magnetic member 40. These are because the magnetic field attracted and collected by the first magnetic member 40 was horizontally emitted from the first magnetic member 40 at a high magnetic field strength. The high magnetic field strength horizontal magnetic field was applied to the first magnetoresistance elements 120a and 120b.
　図１１に示すように、第１磁性体部材４０の外周縁から内側に約７μｍ以上離れた位置では、水平方向の磁界強度が、印加した垂直磁界または水平磁界の強度である３０ｍＴの１／３以下となっていた。よって、第１磁性体部材４０の外周縁から内側に約７μｍ以上離れた位置に、第２磁気抵抗素子１３０ａ，１３０ｂが設けられていることが好ましい。 As shown in FIG. 11, the magnetic field strength in the horizontal direction is 1/3 of 30 mT, which is the strength of the applied vertical magnetic field or horizontal magnetic field, at a position spaced about 7 μm or more inward from the outer peripheral edge of the first magnetic member 40. It was below. Therefore, it is preferable that the second magnetoresistance elements 130a and 130b be provided at a position spaced apart by about 7 μm or more from the outer peripheral edge of the first magnetic member 40.
　上記のように、第１磁性体部材４０の外周縁から内側に約２μｍ離れた位置から、第１磁性体部材４０の外周縁から外側に約１０μｍ離れた位置までの、領域においては、水平方向の磁界強度が、印加した垂直磁界または水平磁界の強度である３０ｍＴより高くなっていた。よって、この領域の少なくとも一部に、第１磁気抵抗素子１２０ａ，１２０ｂの少なくとも一部が設けられていることが好ましい。絶縁層３０に直交する方向から見て、上記の領域に設けられた第１磁気抵抗素子１２０ａ，１２０ｂによって、第１磁性体部材４０の外周全周の１／２以上が取り囲まれていることが好ましく、第１磁性体部材４０の外周全周の２／３以上が取り囲まれていることがさらに好ましい。 As described above, in the region from the position spaced about 2 μm inward from the outer circumferential edge of the first magnetic member 40 to the position spaced about 10 μm outward from the outer circumferential edge of the first magnetic member 40, the horizontal direction The magnetic field strength of the magnetic field is higher than 30 mT, which is the strength of the applied vertical magnetic field or horizontal magnetic field. Therefore, it is preferable that at least a part of the first magnetoresistance elements 120a and 120b be provided in at least a part of this region. More than half of the entire outer circumference of the first magnetic member 40 is surrounded by the first magnetoresistance elements 120a and 120b provided in the above region, as viewed in the direction orthogonal to the insulating layer 30. More preferably, 2/3 or more of the entire outer circumference of the first magnetic member 40 is surrounded.
　また、第１磁性体部材４０が、絶縁層３０に直交する方向から見て、第１磁気抵抗素子１２０ａ，１２０ｂの外周縁と同心状に位置し、かつ、第１磁気抵抗素子１２０ａ，１２０ｂに囲まれていることにより、第１磁性体部材４０の外周縁から外側に放出された水平方向の磁界を第１磁気抵抗素子１２０ａ，１２０ｂに周方向において略均等に印加させることができた。 In addition, the first magnetic member 40 is positioned concentrically with the outer peripheral edge of the first magnetoresistive elements 120a and 120b when viewed from the direction orthogonal to the insulating layer 30, and the first magnetoresistive elements 120a and 120b. By being surrounded, the magnetic field in the horizontal direction emitted outward from the outer peripheral edge of the first magnetic member 40 can be applied approximately equally in the circumferential direction to the first magnetoresistance elements 120a and 120b.
　実験例１の結果から、本発明の実施形態１に係る磁気センサ１は、垂直磁界による第２磁気抵抗素子１３０ａ，１３０ｂの抵抗変化を抑制しつつ、第１磁気抵抗素子１２０ａ，１２０ｂの垂直磁界の検出感度を高めることができることを確認できた。すなわち、第１磁気抵抗素子１２０ａ，１２０ｂは、微弱な垂直磁界を検出することができる。また、本発明の実施形態１に係る磁気センサ１は、水平磁界による第２磁気抵抗素子１３０ａ，１３０ｂの抵抗変化を抑制しつつ、第１磁気抵抗素子１２０ａ，１２０ｂの水平磁界の検出感度を高めることができることを確認できた。すなわち、第１磁気抵抗素子１２０ａ，１２０ｂは、微弱な水平磁界を検出することができる。 From the results of Experimental Example 1, in the magnetic sensor 1 according to Embodiment 1 of the present invention, the perpendicular magnetic field of the first magnetoresistance elements 120a and 120b is suppressed while suppressing the resistance change of the second magnetoresistance elements 130a and 130b due to the perpendicular magnetic field. It has been confirmed that the detection sensitivity of can be enhanced. That is, the first magnetoresistance elements 120a and 120b can detect a weak vertical magnetic field. Further, the magnetic sensor 1 according to the first embodiment of the present invention improves the detection sensitivity of the horizontal magnetic field of the first magnetic resistance elements 120a and 120b while suppressing the resistance change of the second magnetic resistance elements 130a and 130b due to the horizontal magnetic field. I was able to confirm that I could do it. That is, the first magnetoresistance elements 120a and 120b can detect a weak horizontal magnetic field.
　ここで、磁気センサに垂直磁界が印加された際の第１磁性体部材の外周縁からの水平方向の距離と水平方向の磁界強度との関係に与える、第１磁性体部材の厚さの影響をシミュレーションにより検証した実験例２について説明する。 Here, the influence of the thickness of the first magnetic member on the relationship between the horizontal distance from the outer peripheral edge of the first magnetic member and the magnetic field strength in the horizontal direction when a vertical magnetic field is applied to the magnetic sensor Experimental example 2 which verified by simulation is demonstrated.
　図１２は、実験例２に係る磁気センサに垂直磁界が印加された際の、第１磁性体部材の外周縁からの水平方向の距離と水平方向の磁界強度との関係に与える、第１磁性体部材の厚さの影響を示すグラフである。図１２においては、縦軸に水平方向の磁界強度(ｍＴ)、横軸に第１磁性体部材の外周縁からの水平方向の距離(μｍ)を示している。図１３は、水平方向の磁界強度がピーク値の１/３となる第１磁性体部材の外周縁から外側への水平方向の距離と、第１磁性体部材の厚さとの関係を示すグラフである。図１２および図１３においては、第１磁性体部材の外周縁からの水平方向の距離は、第１磁性体部材４０の外周縁から外側に離れた距離を正の値、第１磁性体部材４０の外周縁から内側に離れた距離を負の値で示している。 FIG. 12 shows the relationship between the distance in the horizontal direction from the outer peripheral edge of the first magnetic member and the magnetic field strength in the horizontal direction when a vertical magnetic field is applied to the magnetic sensor according to Experimental Example 2 It is a graph which shows the influence of the thickness of a body member. In FIG. 12, the vertical axis indicates the magnetic field strength (mT) in the horizontal direction, and the horizontal axis indicates the horizontal distance (μm) from the outer peripheral edge of the first magnetic member. FIG. 13 is a graph showing the relationship between the thickness of the first magnetic member and the horizontal distance from the outer peripheral edge of the first magnetic member to the outside at which the magnetic field strength in the horizontal direction is 1/3 of the peak value. is there. 12 and 13, the horizontal distance from the outer peripheral edge of the first magnetic member is a positive distance from the outer peripheral edge of the first magnetic member 40 to the first magnetic member 40. The distance away from the outer edge of the inward is indicated by a negative value.
　実験例２においては、第１磁性体部材４０の外形を、直径が１４０μｍの円柱状とした。第１磁性体部材４０の厚さｘを、１０μｍ、２０μｍ、５０μｍ、１００μｍおよび１５０μｍの５種類とした。第１磁性体部材４０は、パーマロイで構成した。第１磁性体部材４０の配置は、実験例１と同様にした。印加する垂直磁界の強度は、３０ｍＴとした。 In Experimental Example 2, the outer shape of the first magnetic member 40 was a cylindrical shape having a diameter of 140 μm. The thickness x of the first magnetic member 40 was five types of 10 μm, 20 μm, 50 μm, 100 μm and 150 μm. The first magnetic member 40 was made of permalloy. The arrangement of the first magnetic member 40 was the same as that of Example 1. The strength of the applied perpendicular magnetic field was 30 mT.
　図１２に示すように、第１磁性体部材４０の厚さｘが厚くなるにしたがって、水平方向の磁界強度のピーク値が大きくなった。なお、図１２に示すグラフは、パーマロイが取り得る透磁率の１００００以上１０００００以下の範囲においては、第１磁性体部材４０の透磁率への依存性が小さく、第１磁性体部材４０の透磁率が変わった場合にもほとんど変化しない。 As shown in FIG. 12, as the thickness x of the first magnetic member 40 increases, the peak value of the magnetic field strength in the horizontal direction increases. In the graph shown in FIG. 12, in the range of 10000 or more and 100000 or less of the permeability that Permalloy can take, the dependency on the permeability of the first magnetic member 40 is small, and the permeability of the first magnetic member 40 is There is almost no change when
　磁気センサ１のブリッジ回路から安定した出力を得るためには、第１磁気抵抗素子１２０ａ，１２０ｂに、水平方向の磁界強度のピーク値の１/３以上の強度の水平方向の磁界が印加され、かつ、第２磁気抵抗素子１３０ａ，１３０ｂに印加される水平方向の磁界の強度が、水平方向の磁界強度のピーク値の１/１０以下であることが好ましい。 In order to obtain a stable output from the bridge circuit of the magnetic sensor 1, a horizontal magnetic field of 1/3 or more of the peak value of the magnetic field strength in the horizontal direction is applied to the first magnetoresistance elements 120a and 120b, And it is preferable that the intensity of the magnetic field in the horizontal direction applied to the second magnetoresistance elements 130a and 130b is 1/10 or less of the peak value of the magnetic field intensity in the horizontal direction.
　図１２に示すように、第１磁性体部材４０の厚さｘによらず、第１磁性体部材４０の外周縁から内側に２μｍ以内の領域では、水平方向の磁界強度がピーク値の１/３以上となっていた。 As shown in FIG. 12, regardless of the thickness x of the first magnetic member 40, in a region within 2 μm from the outer peripheral edge of the first magnetic member 40, the magnetic field strength in the horizontal direction is 1/1 of the peak value. It was 3 or more.
　図１３に示すように、水平方向の磁界強度がピーク値の１/３となる第１磁性体部材４０の外周縁から外側への水平方向の距離ｙは、第１磁性体部材４０の厚さｘが厚くなるにしたがって長くなっていた。厚さｘと距離ｙとの関係は、下記の近似式(Ｉ)で表される。
　ｙ＝－０．０００８ｘ２＋０．２４９５ｘ＋６．６５０６　(Ｉ) As shown in FIG. 13, the horizontal distance y from the outer peripheral edge of the first magnetic member 40 to the outer side where the magnetic field strength in the horizontal direction is 1/3 of the peak value is the thickness of the first magnetic member 40. It became long as x became thick. The relationship between the thickness x and the distance y is expressed by the following approximate expression (I).
y = -0.0008x 2 + 0.2495x + 6.6506 (I)
　すなわち、第１磁性体部材４０の外周縁から外側に上記ｙμｍ以内の領域では、水平方向の磁界強度がピーク値の１/３以上となる。よって、絶縁層３０に直交する方向から見て、第１磁性体部材４０の外周縁から内側に２μｍ離れた位置から、第１磁性体部材４０の外周縁から外側に上記式(Ｉ)で示すｙμｍ離れた位置までの、領域では、水平方向の磁界強度がピーク値の１/３以上となる。 That is, in the region within y μm outside the outer peripheral edge of the first magnetic member 40, the magnetic field strength in the horizontal direction becomes 1/3 or more of the peak value. Therefore, when viewed from the direction orthogonal to the insulating layer 30, the above-mentioned formula (I) is shown outside from the outer peripheral edge of the first magnetic member 40 from a position spaced 2 μm inward from the outer peripheral edge of the first magnetic member 40 In the region up to a position separated by y μm, the magnetic field strength in the horizontal direction becomes 1/3 or more of the peak value.
　図１２に示すように、第１磁性体部材４０の厚さｘによらず、第１磁性体部材４０の外周縁から内側に７μｍ以上の領域では、水平方向の磁界強度がピーク値の１/１０以下となっていた。すなわち、絶縁層３０に直交する方向から見て、第１磁性体部材４０の中心から、第１磁性体部材４０の外周縁から内側に７μｍ離れた位置までの、領域では、水平方向の磁界強度がピーク値の１/１０以下となっていた。 As shown in FIG. 12, regardless of the thickness x of the first magnetic member 40, in the region 7 μm or more inward from the outer peripheral edge of the first magnetic member 40, the magnetic field strength in the horizontal direction is 1/1 of the peak value. It was less than ten. That is, in the region from the center of the first magnetic member 40 to the position 7 μm away from the outer peripheral edge of the first magnetic member 40 in the direction perpendicular to the insulating layer 30, the magnetic field strength in the horizontal direction Was less than 1/10 of the peak value.
　よって、第１磁気抵抗素子１２０ａ，１２０ｂの少なくとも一部が、絶縁層３０に直交する方向から見て、第１磁性体部材４０の外周縁から内側に２μｍ離れた位置から、第１磁性体部材４０の外周縁から外側に上記式(Ｉ)で示すｙμｍ離れた位置までの、領域の少なくとも一部に位置していることが好ましい。 Therefore, when at least a part of the first magnetoresistance elements 120 a and 120 b are separated from the outer peripheral edge of the first magnetic member 40 by 2 μm inward when viewed from the direction orthogonal to the insulating layer 30, the first magnetic member It is preferable to be located in at least one part of an area | region from the outer periphery of 40 to the position left | separated from the outer periphery by y micrometer shown by said Formula (I).
　また、第２磁気抵抗素子１３０ａ，１３０ｂが、絶縁層３０に直交する方向から見て、第１磁性体部材４０の中心から、第１磁性体部材４０の外周縁から内側に７μｍ離れた位置までの、領域に位置していることが好ましい。 Further, from the center of the first magnetic member 40 to a position 7 μm away from the outer peripheral edge of the first magnetic member 40 when the second magnetoresistive elements 130 a and 130 b are viewed in the direction orthogonal to the insulating layer 30. Preferably, it is located in the area of
　上記のように、本発明の実施形態１に係る磁気センサ１は、垂直磁界および水平磁界を高感度に検出することができる。また、本発明の実施形態１に係る磁気センサ１は、第１磁気抵抗素子１２０ａ，１２０ｂが同心円状に配置された複数の第１単位パターンを含むことにより、水平磁界の検出の等方性が高い。 As described above, the magnetic sensor 1 according to Embodiment 1 of the present invention can detect the vertical magnetic field and the horizontal magnetic field with high sensitivity. Further, the magnetic sensor 1 according to the first embodiment of the present invention includes a plurality of first unit patterns in which the first magnetoresistance elements 120a and 120b are arranged concentrically, so that the isotropy of detection of the horizontal magnetic field is obtained. high.
　本実施形態においては、第２磁気抵抗素子１３０ａ，１３０ｂの２重渦巻き状パターン１３０は、第１磁気抵抗素子１２０ａ，１２０ｂのパターン１２０と同じ太さで形成されている。これにより、第１磁気抵抗素子１２０ａ，１２０ｂと第２磁気抵抗素子１３０ａ，１３０ｂとを同一工程により形成した場合においても、第１磁気抵抗素子１２０ａ，１２０ｂおよび第２磁気抵抗素子１３０ａ，１３０ｂの加工精度のばらつきは低減され、出力特性が安定した磁気センサ１を作製することができる。 In the present embodiment, the double spiral pattern 130 of the second magnetoresistance elements 130a and 130b is formed to have the same thickness as the pattern 120 of the first magnetoresistance elements 120a and 120b. Thereby, even when the first magnetoresistance elements 120a and 120b and the second magnetoresistance elements 130a and 130b are formed in the same step, the first magnetoresistance elements 120a and 120b and the second magnetoresistance elements 130a and 130b are processed. Variation in accuracy is reduced, and a magnetic sensor 1 with stable output characteristics can be manufactured.
　ただし、２重渦巻き状パターン１３０がパターン１２０より細いパターンで形成されていてもよい。この場合、第２磁気抵抗素子１３０ａ，１３０ｂの磁気抵抗効果は、第１磁気抵抗素子１２０ａ，１２０ｂの磁気抵抗効果よりさらに小さくなる。その結果、第２磁気抵抗素子１３０ａ，１３０ｂの磁気抵抗効果が抑制され、第２磁気抵抗素子１３０ａ，１３０ｂの抵抗変化率が著しく小さくなる。 However, the double spiral pattern 130 may be formed in a pattern thinner than the pattern 120. In this case, the magnetoresistance effect of the second magnetoresistance elements 130a and 130b is smaller than that of the first magnetoresistance elements 120a and 120b. As a result, the magnetoresistance effect of the second magnetoresistance elements 130a and 130b is suppressed, and the rate of change in resistance of the second magnetoresistance elements 130a and 130b is significantly reduced.
　これにより、磁気センサ１に外部磁界が印加された際に中点１４０と中点１４１との間に発生する電位差を大きくして、磁気センサ１の検出感度を高くできる。また、第２磁気抵抗素子１３０ａ，１３０ｂの電気抵抗値が高いため、磁気センサ１に高い磁界強度の外部磁界が印加された際の中点１４０と中点１４１との間に発生する電位差の減少が比較的小さく、磁気センサ１の出力特性を安定させることができる。 Thus, the detection sensitivity of the magnetic sensor 1 can be increased by increasing the potential difference generated between the midpoint 140 and the midpoint 141 when the external magnetic field is applied to the magnetic sensor 1. Further, since the electric resistance value of the second magnetoresistance elements 130a and 130b is high, a reduction in the potential difference generated between the middle point 140 and the middle point 141 when an external magnetic field of high magnetic field strength is applied to the magnetic sensor 1 Is relatively small, and the output characteristics of the magnetic sensor 1 can be stabilized.
　なお、本実施形態においては、第２磁気抵抗素子１３０ａ，１３０ｂは、第１磁性体部材４０により磁気シールドされて、垂直磁界および水平磁界をほとんど検出しないため、必ずしも第２磁気抵抗素子１３０ａ，１３０ｂの抵抗変化率が、第１磁気抵抗素子１２０ａ，１２０ｂの抵抗変化率より小さくなくてもよい。 In the present embodiment, since the second magnetoresistive elements 130a and 130b are magnetically shielded by the first magnetic member 40 and hardly detect the vertical magnetic field and the horizontal magnetic field, the second magnetoresistive elements 130a and 130b are not necessarily detected. The rate of change in resistance does not have to be smaller than the rate of change in resistance of the first magnetoresistance elements 120a and 120b.
　本発明の実施形態１に係る磁気センサ１においては、第１磁性体部材４０と回路基板１００との間に、第１導電体部６０が設けられており、第１導電体部６０には、絶縁層３０に直交する方向であるＺ軸方向から見て、貫通孔６０ｈが設けられている。 In the magnetic sensor 1 according to the first embodiment of the present invention, the first conductor portion 60 is provided between the first magnetic member 40 and the circuit board 100, and the first conductor portion 60 includes As viewed in the Z-axis direction which is a direction orthogonal to the insulating layer 30, the through holes 60h are provided.
　これにより、第１導電体部６０と回路基板１００との接触面積を低減することができるとともに、第１導電体部６０と絶縁層３０との接触界面に作用する応力を分散することができる。その結果、第１磁性体部材４０から第１導電体部６０を通じて第１磁気抵抗素子１２０ａ，１２０ｂおよび第２磁気抵抗素子１３０ａ，１３０ｂに作用する応力を低減することができ、磁気センサ１の出力精度が低下することを抑制できる。また、第１磁性体部材４０から第１導電体部６０を通じて絶縁層３０に作用する応力によって絶縁層３０に亀裂が発生することを抑制できる。これにより、磁気センサ１の信頼性が低下することを抑制できる。 Thus, the contact area between the first conductor portion 60 and the circuit board 100 can be reduced, and the stress acting on the contact interface between the first conductor portion 60 and the insulating layer 30 can be dispersed. As a result, the stress acting on the first magnetoresistance elements 120a and 120b and the second magnetoresistance elements 130a and 130b from the first magnetic member 40 through the first conductor portion 60 can be reduced, and the output of the magnetic sensor 1 can be reduced. It is possible to suppress the decrease in accuracy. In addition, generation of a crack in the insulating layer 30 due to the stress acting on the insulating layer 30 from the first magnetic member 40 through the first conductor portion 60 can be suppressed. Thereby, it can suppress that the reliability of the magnetic sensor 1 falls.
　上記のように、本発明の実施形態１に係る磁気センサ１は、磁気抵抗素子を用いて、水平磁界の検出の等方性が高く、微弱な垂直磁界も検出することができるとともに、磁気抵抗素子の上方に設けられた構造体から磁気抵抗素子に作用する応力によって出力精度が低下することを抑制できる。なお、第１磁性体部材４０の厚さｘを、第１磁性体部材４０において第１導電体部６０上に位置する部分の厚さとすることにより、実験例１および実験例２に基づく検証結果を援用することが可能である。 As described above, the magnetic sensor 1 according to the first embodiment of the present invention has high isotropy of detection of the horizontal magnetic field and can detect weak vertical magnetic fields by using the magnetoresistance element, and can also detect magnetic resistance. It is possible to suppress a decrease in output accuracy due to a stress acting on a magnetoresistive element from a structure provided above the element. In addition, by making thickness x of the 1st magnetic material member 40 into the thickness of the part located on the 1st conductor part 60 in the 1st magnetic material member 40, the verification result based on Experimental example 1 and Experimental example 2 It is possible to use
　(実施形態２)
　以下、本発明の実施形態２に係る磁気センサについて図を参照して説明する。なお、本発明の実施形態２に係る磁気センサは、第１導電体部および第１磁性体部材の形状が主に、本発明の実施形態１に係る磁気センサ１と異なるため、本発明の実施形態１に係る磁気センサ１と同様である構成については説明を繰り返さない。 Second Embodiment
Hereinafter, a magnetic sensor according to Embodiment 2 of the present invention will be described with reference to the drawings. The magnetic sensor according to the second embodiment of the present invention is different from the magnetic sensor 1 according to the first embodiment of the present invention mainly in the shapes of the first conductor portion and the first magnetic member, so that the embodiment of the present invention is implemented. The description of the same configuration as that of the magnetic sensor 1 according to the first embodiment will not be repeated.
　図１４は、本発明の実施形態２に係る磁気センサの構成を示す斜視図である。図１５は、図１４の磁気センサをＸＶ－ＸＶ線矢印方向から見た断面図である。図１６は、図１４の磁気センサを矢印ＸＶＩ方向から見た平面図である。 FIG. 14 is a perspective view showing a configuration of a magnetic sensor according to Embodiment 2 of the present invention. FIG. 15 is a cross-sectional view of the magnetic sensor of FIG. 14 as viewed in the arrow direction of XV-XV. FIG. 16 is a plan view of the magnetic sensor of FIG. 14 as viewed in the direction of arrow XVI.
　図１４～図１６に示すように、本発明の実施形態２に係る磁気センサ１ａにおいては、第１導電体部６０ａには、絶縁層３０に直交する方向であるＺ軸方向に貫通した、貫通溝６０ａｍが設けられている。絶縁層３０に直交する方向であるＺ軸方向から見て、貫通溝６０ａｍは、直線状に延在している。貫通溝６０ａｍは、絶縁層３０に直交する方向であるＺ軸方向から見て、第１導電体部６０ａの中心を通過している。すなわち、第１導電体部６０ａは、絶縁層３０に直交する方向であるＺ軸方向から見て、２つの半円形に分離された略円形の形状を有している。なお、第１導電体部６０ａの形状は、上記に限られず、たとえば、貫通溝６０ａｍが第１導電体部６０ａの中心に設けられておらず２分割されており、第１導電体部６０ａが１部材で構成されていてもよい。 As shown in FIGS. 14 to 16, in the magnetic sensor 1 a according to the second embodiment of the present invention, the first conductor portion 60 a penetrates in the Z axis direction which is a direction orthogonal to the insulating layer 30. A groove 60am is provided. When viewed in the Z-axis direction which is a direction orthogonal to the insulating layer 30, the through groove 60am extends linearly. The through groove 60am passes through the center of the first conductor portion 60a as viewed in the Z-axis direction which is a direction orthogonal to the insulating layer 30. That is, when viewed in the Z-axis direction which is a direction orthogonal to the insulating layer 30, the first conductor portion 60a has a substantially circular shape separated into two semicircular shapes. The shape of the first conductor portion 60a is not limited to the above. For example, the through groove 60am is not provided at the center of the first conductor portion 60a but is divided into two, and the first conductor portion 60a is You may be comprised by 1 member.
　２つの第１磁性体部材４０ａは、１対１で対応するように２つの第１導電体部６０ａ上に位置している。第１磁性体部材４０ａは、絶縁層３０に直交する方向から見て、対応する第１導電体部６０ａを覆っている。第１磁性体部材４０ａは、絶縁層３０に直交する方向から見て、貫通溝６０ａｍに沿って位置している。すなわち、第１磁性体部材４０ａには、絶縁層３０に直交する方向に貫通した、貫通溝４０ａｍが設けられている。貫通溝４０ａｍは、絶縁層３０に直交する方向から見て、第１磁性体部材４０ａの中心を通過している。第１磁性体部材４０ａは、２つの半円柱に分離された略円柱状の形状を有している。 The two first magnetic members 40a are located on the two first conductors 60a in a one-to-one correspondence. The first magnetic member 40 a covers the corresponding first conductor portion 60 a when viewed in the direction orthogonal to the insulating layer 30. The first magnetic member 40 a is located along the through groove 60 am when viewed in the direction orthogonal to the insulating layer 30. That is, in the first magnetic member 40a, a through groove 40am penetrating in the direction orthogonal to the insulating layer 30 is provided. The through groove 40am passes through the center of the first magnetic member 40a as viewed from the direction perpendicular to the insulating layer 30. The first magnetic member 40a has a substantially cylindrical shape divided into two half cylinders.
　なお、第１磁性体部材４０ａの形状は、上記に限られず、たとえば、貫通溝４０ａｍが第１磁性体部材４０ａの中心に設けられておらず２分割されており、第１磁性体部材４０ａが１部材で構成されていてもよい。第１磁性体部材４０ａを電解めっきで形成する場合には、第１導電体部６０ａが上記の形状を有することにより、めっき液が貫通溝６０ａｍに沿って第１導電体部６０ａの外周側に流出できるため、めっき液が第１磁性体部材４０ａの内部に閉じ込められることを抑制できる。 The shape of the first magnetic member 40a is not limited to the above, and for example, the through groove 40am is not provided at the center of the first magnetic member 40a but is divided into two, and the first magnetic member 40a is You may be comprised by 1 member. In the case where the first magnetic member 40a is formed by electrolytic plating, the first conductor portion 60a has the above shape, whereby the plating solution is formed along the through groove 60am on the outer peripheral side of the first conductor portion 60a. Since it can flow out, it can suppress that a plating solution is confined in the inside of the 1st magnetic member 40a.
　本発明の実施形態２に係る磁気センサにおいては、第１磁性体部材４０ａと回路基板１００との間に、第１導電体部６０ａが設けられており、第１導電体部６０ａには、絶縁層３０に直交する方向であるＺ軸方向から見て、貫通溝６０ａｍが設けられている。 In the magnetic sensor according to the second embodiment of the present invention, the first conductor portion 60a is provided between the first magnetic member 40a and the circuit board 100, and the first conductor portion 60a is insulated. As viewed in the Z-axis direction which is a direction orthogonal to the layer 30, the through groove 60am is provided.
　これにより、第１導電体部６０ａと回路基板１００との接触面積を低減することができるとともに、第１導電体部６０ａと絶縁層３０との接触界面に作用する応力を分散することができる。その結果、第１磁性体部材４０ａから第１導電体部６０ａを通じて第１磁気抵抗素子１２０ａ，１２０ｂおよび第２磁気抵抗素子１３０ａ，１３０ｂに作用する応力を低減することができ、磁気センサ１ａの出力精度が低下することを抑制できる。また、第１磁性体部材４０ａから第１導電体部６０ａを通じて絶縁層３０に作用する応力によって絶縁層３０に亀裂が発生することを抑制できる。これにより、磁気センサ１ａの信頼性が低下することを抑制できる。 Thus, the contact area between the first conductor portion 60 a and the circuit board 100 can be reduced, and the stress acting on the contact interface between the first conductor portion 60 a and the insulating layer 30 can be dispersed. As a result, the stress acting on the first magnetoresistance elements 120a and 120b and the second magnetoresistance elements 130a and 130b from the first magnetic member 40a through the first conductor portion 60a can be reduced, and the output of the magnetic sensor 1a It is possible to suppress the decrease in accuracy. In addition, it is possible to suppress the occurrence of cracks in the insulating layer 30 due to the stress that acts on the insulating layer 30 from the first magnetic member 40a through the first conductor portion 60a. Thereby, it can suppress that the reliability of the magnetic sensor 1a falls.
　(実施形態３)
　以下、本発明の実施形態３に係る磁気センサについて図を参照して説明する。なお、本発明の実施形態３に係る磁気センサは、第１導電体部に他の貫通溝がさらに設けられている点が主に、本発明の実施形態２に係る磁気センサ１ａと異なるため、本発明の実施形態２に係る磁気センサ１ａと同様である構成については説明を繰り返さない。 (Embodiment 3)
Hereinafter, a magnetic sensor according to Embodiment 3 of the present invention will be described with reference to the drawings. The magnetic sensor according to the third embodiment of the present invention is different from the magnetic sensor 1a according to the second embodiment of the present invention mainly in that another through groove is further provided in the first conductor portion. Description is not repeated about the same composition as magnetic sensor 1a concerning Embodiment 2 of the present invention.
　図１７は、本発明の実施形態３に係る磁気センサの構成を示す斜視図である。図１８は、図１７の磁気センサをＸＶＩＩＩ－ＸＶＩＩＩ線矢印方向から見た断面図である。図１９は、図１７の磁気センサを矢印ＸＩＸ方向から見た平面図である。 FIG. 17 is a perspective view showing the configuration of a magnetic sensor according to Embodiment 3 of the present invention. FIG. 18 is a cross-sectional view of the magnetic sensor of FIG. 17 as viewed in the direction of arrows XVIII-XVIII. FIG. 19 is a plan view of the magnetic sensor of FIG. 17 as viewed in the direction of arrow XIX.
　図１７～図１９に示すように、本発明の実施形態３に係る磁気センサ１ｂにおいては、第１導電体部６０ｂには、絶縁層３０に直交する方向であるＺ軸方向に貫通した、貫通溝６０ａｍおよび他の貫通溝６０ｂｍが設けられている。絶縁層３０に直交する方向であるＺ軸方向から見て、他の貫通溝６０ｂｍは、直線状に延在している。他の貫通溝６０ｂｍは、絶縁層３０に直交する方向であるＺ軸方向から見て、第１導電体部６０ｂの中心を通過している。他の貫通溝６０ｂｍは、絶縁層３０に直交する方向であるＺ軸方向から見て、第１導電体部６０ｂの中心で貫通溝６０ａｍと交差している。すなわち、第１導電体部６０ｂは、４つの四半円形に分離された略円形の形状を有している。なお、第１導電体部６０ｂの形状は、上記に限られず、たとえば、貫通溝６０ａｍおよび他の貫通溝６０ｂｍの各々が、第１導電体部６０ｂの中心に設けられておらず２分割されており、第１導電体部６０ｂが１部材で構成されていてもよい。 As shown in FIGS. 17 to 19, in the magnetic sensor 1b according to the third embodiment of the present invention, the first conductor portion 60b penetrates in the Z axis direction which is a direction orthogonal to the insulating layer 30. Grooves 60am and other through grooves 60bm are provided. When viewed in the Z-axis direction which is a direction orthogonal to the insulating layer 30, the other through grooves 60bm extend linearly. The other through grooves 60bm pass through the center of the first conductor portion 60b when viewed from the Z-axis direction which is a direction orthogonal to the insulating layer 30. The other through groove 60bm intersects the through groove 60am at the center of the first conductor portion 60b when viewed from the Z-axis direction which is a direction orthogonal to the insulating layer 30. That is, the first conductor portion 60b has a substantially circular shape separated into four quadrants. The shape of the first conductor portion 60b is not limited to the above. For example, each of the through groove 60am and the other through groove 60bm is not provided at the center of the first conductor portion 60b, but is divided into two. Alternatively, the first conductor portion 60b may be constituted by one member.
　２つの第１磁性体部材４０ｂは、１対１で対応するように２つの第１導電体部６０ｂ上に位置している。第１磁性体部材４０ｂは、絶縁層３０に直交する方向から見て、対応する第１導電体部６０ｂを覆っている。第１磁性体部材４０ｂは、絶縁層３０に直交する方向から見て、貫通溝６０ａｍおよび他の貫通溝６０ｂｍに沿って位置している。すなわち、第１磁性体部材４０ｂには、絶縁層３０に直交する方向に貫通した、貫通溝４０ａｍおよび他の貫通溝４０ｂｍが設けられている。他の貫通溝４０ｂｍは、絶縁層３０に直交する方向から見て、第１磁性体部材４０ｂの中心を通過している。他の貫通溝４０ｂｍは、絶縁層３０に直交する方向から見て、第１磁性体部材４０ｂの中心で貫通溝４０ａｍと交差している。第１磁性体部材４０ｂは、４つの四半円柱に分離された略円柱状の形状を有している。 The two first magnetic members 40b are located on the two first conductor parts 60b so as to correspond one to one. The first magnetic member 40 b covers the corresponding first conductor portion 60 b as viewed in the direction orthogonal to the insulating layer 30. The first magnetic member 40b is located along the through groove 60am and the other through groove 60bm when viewed from the direction orthogonal to the insulating layer 30. That is, in the first magnetic member 40b, a through groove 40am and another through groove 40bm which are penetrated in the direction orthogonal to the insulating layer 30 are provided. The other through grooves 40 bm pass through the center of the first magnetic member 40 b when viewed in the direction orthogonal to the insulating layer 30. The other through groove 40bm intersects the through groove 40am at the center of the first magnetic member 40b when viewed in the direction orthogonal to the insulating layer 30. The first magnetic member 40b has a substantially cylindrical shape divided into four quadrants.
　なお、第１磁性体部材４０ｂの形状は、上記に限られず、たとえば、貫通溝４０ａｍおよび他の貫通溝４０ｂｍの各々が、第１磁性体部材４０ｂの中心に設けられておらず２分割されており、第１磁性体部材４０ｂが１部材で構成されていてもよい。第１磁性体部材４０ｂを電解めっきで形成する場合には、第１導電体部６０ｂが上記の形状を有することにより、めっき液が貫通溝６０ａｍおよび他の貫通溝６０ｂｍに沿って第１導電体部６０ｂの外周側に流出できるため、めっき液が第１磁性体部材４０ｂの内部に閉じ込められることを抑制できる。 The shape of the first magnetic member 40b is not limited to the above. For example, each of the through groove 40am and the other through groove 40bm is not provided at the center of the first magnetic member 40b but divided into two. The first magnetic member 40b may be formed of one member. In the case where the first magnetic member 40b is formed by electrolytic plating, the first conductor portion 60b has the above-described shape, whereby the plating solution is formed along the through groove 60am and the other through groove 60bm. Since it can flow out to the outer peripheral side of the part 60b, it can suppress that a plating solution is confined in the inside of the 1st magnetic material member 40b.
　本発明の実施形態３に係る磁気センサ１ｂにおいては、第１磁性体部材４０ｂと回路基板１００との間に、第１導電体部６０ｂが設けられており、第１導電体部６０ｂには、絶縁層３０に直交する方向であるＺ軸方向から見て、貫通溝６０ａｍおよび他の貫通溝６０ｂｍが設けられている。 In the magnetic sensor 1b according to the third embodiment of the present invention, the first conductor portion 60b is provided between the first magnetic member 40b and the circuit board 100, and the first conductor portion 60b includes A through groove 60am and another through groove 60bm are provided when viewed from the Z-axis direction which is a direction orthogonal to the insulating layer 30.
　これにより、第１導電体部６０ｂと回路基板１００との接触面積を低減することができるとともに、第１導電体部６０ｂと絶縁層３０との接触界面に作用する応力を分散することができる。その結果、第１磁性体部材４０ｂから第１導電体部６０ｂを通じて第１磁気抵抗素子１２０ａ，１２０ｂおよび第２磁気抵抗素子１３０ａ，１３０ｂに作用する応力を低減することができ、磁気センサ１ｂの出力精度が低下することを抑制できる。また、第１磁性体部材４０ｂから第１導電体部６０ｂを通じて絶縁層３０に作用する応力によって絶縁層３０に亀裂が発生することを抑制できる。これにより、磁気センサ１ｂの信頼性が低下することを抑制できる。 Thus, the contact area between the first conductor portion 60 b and the circuit board 100 can be reduced, and the stress acting on the contact interface between the first conductor portion 60 b and the insulating layer 30 can be dispersed. As a result, the stress acting on the first magnetoresistance elements 120a and 120b and the second magnetoresistance elements 130a and 130b from the first magnetic member 40b through the first conductor portion 60b can be reduced, and the output of the magnetic sensor 1b It is possible to suppress the decrease in accuracy. In addition, it is possible to suppress the occurrence of cracks in the insulating layer 30 due to the stress that acts on the insulating layer 30 from the first magnetic member 40b through the first conductor portion 60b. Thereby, it can suppress that the reliability of the magnetic sensor 1b falls.
　(実施形態４)
　以下、本発明の実施形態４に係る磁気センサについて図を参照して説明する。なお、本発明の実施形態４に係る磁気センサは、第１導電体部を備えない点が主に、本発明の実施形態１に係る磁気センサ１と異なるため、本発明の実施形態１に係る磁気センサ１と同様である構成については説明を繰り返さない。 (Embodiment 4)
Hereinafter, a magnetic sensor according to Embodiment 4 of the present invention will be described with reference to the drawings. The magnetic sensor according to the fourth embodiment of the present invention differs from the magnetic sensor 1 according to the first embodiment of the present invention mainly in that the magnetic sensor according to the fourth embodiment of the present invention does not include the first conductor portion. The description of the same configuration as that of the magnetic sensor 1 will not be repeated.
　図２０は、本発明の実施形態４に係る磁気センサの構成を示す斜視図である。図２１は、図２０の磁気センサをＸＸＩ－ＸＸＩ線矢印方向から見た断面図である。図２２は、図２０の磁気センサを矢印ＸＸＩＩ方向から見た平面図である。 FIG. 20 is a perspective view showing a configuration of a magnetic sensor according to Embodiment 4 of the present invention. FIG. 21 is a cross-sectional view of the magnetic sensor of FIG. 20 as viewed in the direction of the arrows along line XXI-XXI. FIG. 22 is a plan view of the magnetic sensor of FIG. 20 as viewed in the direction of arrow XXII.
　図２０～図２２に示すように、本発明の実施形態４に係る磁気センサ１ｃにおいては、回路基板１００上に第１磁性体部材４０が設けられている。第１磁性体部材４０には、絶縁層３０に直交する方向であるＺ軸方向に貫通した、貫通孔４０ｈが設けられている。第１磁性体部材４０は、円筒状の形状を有している。 As shown in FIGS. 20 to 22, in the magnetic sensor 1c according to the fourth embodiment of the present invention, the first magnetic member 40 is provided on the circuit board 100. The first magnetic member 40 is provided with a through hole 40 h penetrating in the Z-axis direction which is a direction orthogonal to the insulating layer 30. The first magnetic member 40 has a cylindrical shape.
　これにより、第１磁性体部材４０と回路基板１００との接触面積を低減することができるとともに、第１磁性体部材４０と絶縁層３０との接触界面に作用する応力を分散することができる。その結果、第１磁性体部材４０から第１磁気抵抗素子１２０ａ，１２０ｂおよび第２磁気抵抗素子１３０ａ，１３０ｂに作用する応力を低減することができ、磁気センサ１ｃの出力精度が低下することを抑制できる。また、第１磁性体部材４０から絶縁層３０に作用する応力によって絶縁層３０に亀裂が発生することを抑制できる。これにより、磁気センサ１ｃの信頼性が低下することを抑制できる。 Thus, the contact area between the first magnetic member 40 and the circuit board 100 can be reduced, and the stress acting on the contact interface between the first magnetic member 40 and the insulating layer 30 can be dispersed. As a result, it is possible to reduce the stress acting from the first magnetic member 40 to the first magnetoresistance elements 120a and 120b and the second magnetoresistance elements 130a and 130b, and to suppress the decrease in the output accuracy of the magnetic sensor 1c. it can. In addition, the generation of a crack in the insulating layer 30 due to the stress acting on the insulating layer 30 from the first magnetic member 40 can be suppressed. Thereby, it can suppress that the reliability of the magnetic sensor 1c falls.
　なお、第１磁性体部材４０の形状は、上記に限られず、実施形態２に係る第１磁性体部材４０ａの形状、または、実施形態３に係る第１磁性体部材４０ｂの形状などであってもよい。 The shape of the first magnetic member 40 is not limited to the above, and may be the shape of the first magnetic member 40a according to the second embodiment or the shape of the first magnetic member 40b according to the third embodiment. It is also good.
　(実施形態５)
　以下、本発明の実施形態５に係る磁気センサについて図を参照して説明する。なお、本発明の実施形態５に係る磁気センサは、第２磁気抵抗素子のパターンが主に、本発明の実施形態１に係る磁気センサ１と異なるため、本発明の実施形態１に係る磁気センサ１と同様である構成については説明を繰り返さない。 Embodiment 5
Hereinafter, a magnetic sensor according to Embodiment 5 of the present invention will be described with reference to the drawings. The magnetic sensor according to the fifth embodiment of the present invention is different from the magnetic sensor 1 according to the first embodiment of the present invention mainly in the pattern of the second magnetoresistive element, so the magnetic sensor according to the first embodiment of the present invention Description will not be repeated for configurations that are similar to 1.
　図２３は、本発明の実施形態５に係る磁気センサの平面図である。図２４は、本発明の実施形態５に係る磁気センサの第２磁気抵抗素子のパターンを示す平面図である。図２３に示すように、本発明の実施形態５に係る磁気センサ２は、回路基板２００と、回路基板２００の上方に設けられた２つの第１磁性体部材４０とを備える。本発明の実施形態５に係る磁気センサ２においては、回路基板２００上に２つの第１導電体部が設けられている。第１磁性体部材４０は、絶縁層３０に直交する方向であるＺ軸方向から見て、対応する第１導電体部を覆っている。 FIG. 23 is a plan view of a magnetic sensor according to Embodiment 5 of the present invention. FIG. 24 is a plan view showing a pattern of the second magnetoresistive element of the magnetic sensor according to Embodiment 5 of the present invention. As shown in FIG. 23, the magnetic sensor 2 according to Embodiment 5 of the present invention includes a circuit board 200 and two first magnetic members 40 provided above the circuit board 200. In the magnetic sensor 2 according to the fifth embodiment of the present invention, two first conductor portions are provided on the circuit board 200. The first magnetic member 40 covers the corresponding first conductive portion as viewed in the Z-axis direction which is a direction orthogonal to the insulating layer 30.
　図２３および図２４に示すように、本発明の実施形態５に係る磁気センサ２の第１磁気抵抗素子１２０ａ，１２０ｂのパターンは、絶縁層３０に直交する方向から見て、仮想円Ｃ2の円周に沿って仮想円Ｃ2の径方向に並ぶように配置されて互いに接続された３つの第１単位パターンを含む。３つの第１単位パターンの各々は、仮想円Ｃ2の円周において配線１４６，１４８，１５０，１５２が位置する部分が開放した仮想Ｃ字形状Ｃ21に沿って位置している。３つの第１単位パターンの各々は、仮想Ｃ字形状Ｃ21に沿って仮想円Ｃ2の径方向に並ぶように配置されたＣ字状パターンである。 As shown in FIGS. 23 and 24, the first magneto resistive element 120a of the magnetic sensor 2 according to a fifth embodiment of the present invention, 120b of the pattern is viewed from the direction perpendicular to the insulating layer 30, the imaginary circle C 2 including three first unit patterns connected to each other are arranged side by side in the radial direction of the virtual circle C 2 along the circumference. Each of the three first unit pattern is located along a virtual C-shape C 21 a portion where the wiring 146,148,150,152 are located at the circumference of the virtual circle C 2 is opened. Each of the three first unit pattern is a C-shaped pattern which are arranged side by side in the radial direction of the virtual circle C 2 along a virtual C-shape C 21.
　図２３に示すように、第１磁気抵抗素子１２０ａと第１磁気抵抗素子１２０ｂとは、仮想Ｃ字形状Ｃ21の向きが互いに異なるように周方向の向きが異なっている。すなわち、第１磁気抵抗素子１２０ａと第１磁気抵抗素子１２０ｂとは、Ｃ字状パターンの向きが互いに異なるように、パターンの周方向の向きが異なっている。 As shown in FIG. 23, a first magnetoresistive element 120a and the first magnetoresistive element 120b, the orientation of the virtual C-shaped C 21 are different in the circumferential direction of the orientation are different from each other. That is, in the first magnetoresistance element 120 a and the first magnetoresistance element 120 b, the circumferential directions of the patterns are different so that the directions of the C-shaped patterns are different from each other.
　本実施形態においては、第１磁気抵抗素子１２０ａと第１磁気抵抗素子１２０ｂとは、Ｃ字状パターンの向きが互いに９０°異なるように、パターンの周方向の向きが９０°異なっている。 In the present embodiment, the first magnetoresistance element 120a and the first magnetoresistance element 120b differ in the circumferential direction of the pattern by 90 ° so that the directions of the C-shaped patterns are different from each other by 90 °.
　図２３および図２４に示すように、第２磁気抵抗素子２３０ａ，２３０ｂは、絶縁層３０に直交する方向から見て、仮想円Ｃ2の中心側に位置し、第１磁気抵抗素子１２０ａ，１２０ｂに囲まれている。すなわち、第２磁気抵抗素子２３０ａ，２３０ｂは、絶縁層３０に直交する方向から見て、第１磁気抵抗素子１２０ａ，１２０ｂの内周縁より内側に位置している。 As shown in FIGS. 23 and 24, the second magnetoresistance element 230a, 230b, when viewed from a direction perpendicular to the insulating layer 30, situated in the center of the imaginary circle C 2, the first magnetoresistive element 120a, 120b It is surrounded by That is, the second magnetoresistance elements 230a and 230b are located inside the inner peripheral edge of the first magnetoresistance elements 120a and 120b when viewed from the direction orthogonal to the insulating layer 30.
　第２磁気抵抗素子２３０ａ，２３０ｂは、仮想円Ｃ2の円周に沿って仮想円Ｃ2の径方向に並ぶように線対称に配置された第２単位パターンである１４個の半円弧状パターン２３１を含むパターン２３０を有している。パターン２３０は、第１磁気抵抗素子１２０ａ，１２０ｂのパターン１２０と同じ太さで形成されている。ただし、パターン２３０の太さが、パターン１２０の太さより細くてもよい。 Second magnetoresistance element 230a, 230b is fourteen semicircular pattern is a second unit pattern arranged symmetrically so as to align in the radial direction of the virtual circle C 2 along the circumference of the virtual circle C 2 A pattern 230 including 231 is included. The pattern 230 is formed to have the same thickness as the pattern 120 of the first magnetoresistance elements 120a and 120b. However, the thickness of the pattern 230 may be thinner than the thickness of the pattern 120.
　１４個の半円弧状パターン２３１は、内側から順に一端と他端とで交互に互いに接続されている。一端同士が接続されている半円弧状パターン２３１は、半円弧状パターン２３２によって互いに接続されている。他端同士が接続されている半円弧状パターン２３１は、半円弧状パターン２３３によって互いに接続されている。最も内側に位置して互いに線対称な半円弧状パターン２３１同士は、互いの一端同士を直線状延在部２３４によって接続されている。直線状延在部２３４の長さは、１０μｍより短い。 The fourteen semi-circular patterns 231 are alternately connected to each other at one end and the other in order from the inside. The semicircular arc-shaped patterns 231 whose ends are connected to each other are connected to each other by a semicircular arc-shaped pattern 232. The semicircular arc patterns 231 whose other ends are connected to each other are connected to each other by a semicircular arc pattern 233. The semicircular arc-shaped patterns 231 located at the innermost and symmetrical with each other are connected to each other at their one ends by the linear extending portions 234. The length of the linear extension 234 is less than 10 μm.
　第２磁気抵抗素子２３０ａ，２３０ｂのパターン２３０は、６つの半円弧状パターン２３２、６つの半円弧状パターン２３３および直線状延在部２３４を含む。これにより、１４個の半円弧状パターン２３１が直列に接続されている。半円弧状パターン２３２，２３３は、直線状延在部を含まず、湾曲部のみから構成されている。 The pattern 230 of the second magnetoresistive elements 230a and 230b includes six semicircular arc patterns 232, six semicircular arc patterns 233, and a linear extension 234. As a result, fourteen semi-circular patterns 231 are connected in series. The semi-arc shaped patterns 232 and 233 do not include linear extending parts, and are formed only of curved parts.
　本実施形態に係る磁気センサ２においては、第２磁気抵抗素子２３０ａ，２３０ｂが半円弧状パターン２３１を有している。半円弧状パターン２３１は、円弧で構成されている。互いに隣接した２つの半円弧状パターン２３１同士は、半円弧状パターン２３２，２３３によって互いに接続されている。第２磁気抵抗素子２３０ａ，２３０ｂは、長さが１０μｍより短い直線状延在部２３４のみを含んでいるため、磁界検出の異方性が低減されている。 In the magnetic sensor 2 according to the present embodiment, the second magnetoresistance elements 230 a and 230 b have a semicircular arc-shaped pattern 231. The semicircular arc-shaped pattern 231 is configured by an arc. Two semi-arc shaped patterns 231 adjacent to each other are connected to each other by semi-arc shaped patterns 232 and 233. Since the second magnetoresistive elements 230a and 230b include only the linear extending portion 234 whose length is shorter than 10 μm, the anisotropy of the magnetic field detection is reduced.
　第２磁気抵抗素子２３０ａと第２磁気抵抗素子２３０ｂとは、パターン２３０の周方向の向きが異なっている。本実施形態においては、第２磁気抵抗素子１３０ａと第２磁気抵抗素子１３０ｂとは、パターン２３０の周方向の向きが９０°異なっている。これにより、第２磁気抵抗素子２３０ａおよび第２磁気抵抗素子２３０ｂの各々の磁気抵抗効果の異方性を互いに低減することができる。 The second magnetoresistance element 230 a and the second magnetoresistance element 230 b are different in the circumferential direction of the pattern 230. In the present embodiment, the second magnetoresistance element 130a and the second magnetoresistance element 130b differ in the circumferential direction of the pattern 230 by 90 °. Thereby, the anisotropy of the magnetoresistive effect of each of the 2nd magnetoresistive element 230a and the 2nd magnetoresistive element 230b can mutually be reduced.
　本実施形態に係る磁気センサ２においても、第１磁気抵抗素子１２０ａ，１２０ｂの内側に第２磁気抵抗素子２３０ａ，２３０ｂを配置しているため、磁気センサ２を小形にできる。また、磁気センサ２においても、第１磁気抵抗素子１２０ａ，１２０ｂと第２磁気抵抗素子２３０ａ，２３０ｂとを接続する配線を立体的に引き回す必要がないため、簡易な製造プロセスで回路基板２００を製造可能である。 Also in the magnetic sensor 2 according to the present embodiment, since the second magnetoresistance elements 230a and 230b are disposed inside the first magnetoresistance elements 120a and 120b, the magnetic sensor 2 can be miniaturized. Further, in the magnetic sensor 2 as well, it is not necessary to three-dimensionally extend the wiring connecting the first magnetoresistance elements 120a and 120b and the second magnetoresistance elements 230a and 230b, so the circuit board 200 is manufactured by a simple manufacturing process. It is possible.
　図２３に示すように、第１磁性体部材４０は、絶縁層３０に直交する方向であるＺ軸方向から見て、第１磁気抵抗素子１２０ａ，１２０ｂおよび第２磁気抵抗素子２３０ａ，２３０ｂのうちの第２磁気抵抗素子２３０ａ，２３０ｂのみを覆っている。 As shown in FIG. 23, when viewed from the Z-axis direction which is a direction perpendicular to the insulating layer 30, the first magnetic member 40 is one of the first magnetoresistive elements 120a and 120b and the second magnetoresistive elements 230a and 230b. Only the second magnetoresistance elements 230a and 230b.
　本実施形態に係る磁気センサ２においても、垂直磁界および水平磁界を高感度に検出することができる。また、本発明の実施形態５に係る磁気センサ２は、第１磁気抵抗素子１２０ａ，１２０ｂが同心円状に配置された複数の第１単位パターンを含むことにより、水平磁界の検出の等方性が高い。 Also in the magnetic sensor 2 according to the present embodiment, the vertical magnetic field and the horizontal magnetic field can be detected with high sensitivity. Further, the magnetic sensor 2 according to Embodiment 5 of the present invention includes a plurality of first unit patterns in which the first magnetoresistance elements 120a and 120b are arranged concentrically, so that the isotropy of detection of the horizontal magnetic field is obtained. high.
　なお、本実施形態においては、第２磁気抵抗素子２３０ａ，２３０ｂは、第１磁性体部材４０により磁気シールドされて、垂直磁界および水平磁界をほとんど検出しないため、必ずしも第２磁気抵抗素子２３０ａ，２３０ｂの抵抗変化率が、第１磁気抵抗素子１２０ａ，１２０ｂの抵抗変化率より小さくなくてもよい。 In the present embodiment, since the second magnetoresistance elements 230a and 230b are magnetically shielded by the first magnetic member 40 and hardly detect the vertical magnetic field and the horizontal magnetic field, the second magnetoresistance elements 230a and 230b are not necessarily detected. The rate of change in resistance does not have to be smaller than the rate of change in resistance of the first magnetoresistance elements 120a and 120b.
　本発明の実施形態５に係る磁気センサ２においても、磁気抵抗素子を用いて、水平磁界の検出の等方性が高く、微弱な垂直磁界も検出することができるとともに、磁気抵抗素子の上方に設けられた構造体から磁気抵抗素子に作用する応力によって出力精度が低下することを抑制できる。 Also in the magnetic sensor 2 according to Embodiment 5 of the present invention, using the magnetoresistive element, the isotropy of detection of the horizontal magnetic field is high, and a weak vertical magnetic field can be detected, and above the magnetoresistive element It is possible to suppress the decrease in output accuracy due to the stress acting on the magnetoresistive element from the provided structure.
　(実施形態６)
　以下、本発明の実施形態６に係る磁気センサについて図を参照して説明する。なお、本発明の実施形態６に係る磁気センサは、第１磁気抵抗素子および第２磁気抵抗素子の各々のパターンと、第２磁気抵抗素子の配置と、第２導電体部を備える点とが主に、本発明の実施形態１に係る磁気センサ１と異なるため、本発明の実施形態１に係る磁気センサ１と同様である構成については説明を繰り返さない。 Embodiment 6
Hereinafter, a magnetic sensor according to Embodiment 6 of the present invention will be described with reference to the drawings. In the magnetic sensor according to the sixth embodiment of the present invention, the pattern of each of the first and second magnetoresistance elements, the arrangement of the second magnetoresistance element, and the point of including the second conductor portion The configuration is the same as that of the magnetic sensor 1 according to the first embodiment of the present invention, and therefore, the description will not be repeated because it is mainly different from the magnetic sensor 1 according to the first embodiment of the present invention.
　図２５は、本発明の実施形態６に係る磁気センサの構成を示す斜視図である。図２６は、図２５の磁気センサをＸＸＶＩ－ＸＸＶＩ線矢印方向から見た断面図である。図２７は、図２５の磁気センサを矢印ＸＸＶＩＩ方向から見た平面図である。 FIG. 25 is a perspective view showing a configuration of a magnetic sensor according to Embodiment 6 of the present invention. FIG. 26 is a cross-sectional view of the magnetic sensor of FIG. 25 as viewed in the direction of arrows XXVI-XXVI. FIG. 27 is a plan view of the magnetic sensor of FIG. 25 as viewed in the direction of arrow XXVII.
　図２５～図２７に示すように、本発明の実施形態６に係る磁気センサ３は、回路基板３００と、回路基板３００の上方に設けられた、２つの第１磁性体部材４０および２つの第２磁性体部材５０とを備える。本発明の実施形態６に係る磁気センサ３においては、回路基板３００上に２つの第１導電体部６０および２つの第２導電体部７０が設けられている。回路基板３００の表層には、絶縁層３０が設けられており、２つの第１導電体部６０および２つの第２導電体部７０は、絶縁層３０上に位置している。 As shown in FIGS. 25 to 27, the magnetic sensor 3 according to the sixth embodiment of the present invention includes a circuit board 300, and two first magnetic members 40 and two first magnetic members 40 provided above the circuit board 300. And 2 a magnetic member 50. In the magnetic sensor 3 according to the sixth embodiment of the present invention, the two first conductor parts 60 and the two second conductor parts 70 are provided on the circuit board 300. The insulating layer 30 is provided on the surface layer of the circuit board 300, and the two first conductor parts 60 and the two second conductor parts 70 are located on the insulating layer 30.
　第２導電体部７０には、絶縁層３０に直交する方向であるＺ軸方向に貫通した、貫通孔７０ｈが設けられている。絶縁層３０に直交する方向であるＺ軸方向から見て、貫通孔７０ｈは、第２導電体部７０の中央に設けられている。絶縁層３０に直交する方向であるＺ軸方向から見て、貫通孔７０ｈは、屈曲した矩形状に設けられている。すなわち、第２導電体部７０は、絶縁層３０に直交する方向であるＺ軸方向から見て、屈曲した矩形状の外形を有しつつ環状の形状を有している。 The second conductor portion 70 is provided with a through hole 70 h penetrating in the Z-axis direction which is a direction orthogonal to the insulating layer 30. The through hole 70 h is provided at the center of the second conductor portion 70 as viewed in the Z-axis direction which is a direction orthogonal to the insulating layer 30. When viewed from the Z-axis direction which is a direction orthogonal to the insulating layer 30, the through holes 70h are provided in a bent rectangular shape. That is, the second conductor portion 70 has an annular shape while having a bent rectangular outer shape when viewed from the Z-axis direction which is a direction orthogonal to the insulating layer 30.
　２つの第２磁性体部材５０は、１対１で対応するように２つの第２導電体部７０上に位置している。第２磁性体部材５０は、絶縁層３０に直交する方向から見て、対応する第２導電体部７０を覆っている。第２磁性体部材５０は、絶縁層３０に直交する方向から見て、貫通孔７０ｈに沿って位置している。すなわち、第２磁性体部材５０には、絶縁層３０に直交する方向に貫通した、貫通孔５０ｈが設けられている。絶縁層３０に直交する方向から見て、貫通孔５０ｈは、第２磁性体部材５０の中央に設けられている。絶縁層３０に直交する方向から見て、貫通孔５０ｈは、屈曲した矩形状に設けられている。第２磁性体部材５０は、絶縁層３０に直交する方向から見て、屈曲した矩形状の外形を有しつつ、筒状の形状を有している。 The two second magnetic members 50 are located on the two second conductor portions 70 in a one-to-one correspondence. The second magnetic member 50 covers the corresponding second conductor portion 70 as viewed in the direction orthogonal to the insulating layer 30. The second magnetic member 50 is located along the through hole 70 h as viewed in the direction orthogonal to the insulating layer 30. That is, the second magnetic member 50 is provided with the through hole 50 h penetrating in the direction orthogonal to the insulating layer 30. The through hole 50 h is provided at the center of the second magnetic member 50 when viewed in the direction orthogonal to the insulating layer 30. When viewed in the direction orthogonal to the insulating layer 30, the through holes 50h are provided in a bent rectangular shape. The second magnetic member 50 has a tubular shape while having a bent rectangular outer shape when viewed in the direction orthogonal to the insulating layer 30.
　第２磁性体部材５０と回路基板３００との間の距離を短くする観点から、第２導電体部７０のＺ軸方向の厚さ、すなわち、第２導電体部７０のＺ軸方向の厚さは、２．０μｍ以下であることが好ましい。第２磁性体部材５０と回路基板３００との間の距離が短いほど、第２磁性体部材５０の磁気シールドとしての機能を確保することができる。第２導電体部７０の形成方法としては、レジストを用いたパターニングなどを用いることができる。 From the viewpoint of shortening the distance between the second magnetic member 50 and the circuit board 300, the thickness in the Z-axis direction of the second conductor portion 70, that is, the thickness in the Z-axis direction of the second conductor portion 70 Is preferably 2.0 μm or less. As the distance between the second magnetic member 50 and the circuit board 300 is shorter, the function of the second magnetic member 50 as a magnetic shield can be secured. As a method of forming the second conductor portion 70, patterning using a resist can be used.
　本実施形態においては、第２導電体部７０は、絶縁層３０上に位置し、チタン(Ｔｉ)を含む層と、チタン(Ｔｉ)を含む層上に位置する、金(Ａｕ)を含む層とから構成されている。チタン(Ｔｉ)を含む層は密着層である。第２磁性体部材５０を電解めっきで形成する場合、金(Ａｕ)を含む層は電極反応層、すなわちシード層として機能する。第２導電体部７０の構成は、上記に限られず、めっきのシード層として機能する材料である、鉄(Ｆｅ)、モリブデン(Ｍｏ)、タンタル(Ｔａ)、白金(Ｐｔ)および銅(Ｃｕ)の少なくとも一つからなる層を含むものであってもよい。また、第２磁性体部材５０が蒸着などのめっき以外の方法で形成される場合には、金属および樹脂の少なくとも一方を含む他の導電体で構成されていてもよい。 In the present embodiment, the second conductor portion 70 is located on the insulating layer 30 and is a layer containing titanium (Ti) and a layer containing gold (Au) located on the layer containing titanium (Ti) And consists of The layer containing titanium (Ti) is an adhesive layer. When the second magnetic member 50 is formed by electrolytic plating, a layer containing gold (Au) functions as an electrode reaction layer, that is, a seed layer. The configuration of the second conductor portion 70 is not limited to the above, and iron (Fe), molybdenum (Mo), tantalum (Ta), platinum (Pt) and copper (Cu), which are materials functioning as a seed layer for plating. And a layer comprising at least one of Moreover, when the 2nd magnetic body member 50 is formed by methods other than plating, such as vapor deposition, you may be comprised with the other conductor containing at least one of a metal and resin.
　図２８は、図２５の磁気センサを矢印ＸＸＶＩＩＩ方向から見た平面図である。図２８に示すように、本発明の実施形態６に係る磁気センサ３の回路基板３００には、互いに配線によって電気的に接続されてホイートストンブリッジ型のブリッジ回路を構成する４つの磁気抵抗素子が設けられている。４つの磁気抵抗素子は、２組の第１磁気抵抗素子および第２磁気抵抗素子からなる。具体的には、磁気センサ３は、第１磁気抵抗素子３２０ａおよび第２磁気抵抗素子３３０ａと、第１磁気抵抗素子３２０ｂおよび第２磁気抵抗素子３３０ｂとを含んでいる。第１磁気抵抗素子３２０ａおよび第２磁気抵抗素子３３０ａは１つの組を構成している。第１磁気抵抗素子３２０ｂおよび第２磁気抵抗素子３３０ｂは１つの組を構成している。 FIG. 28 is a plan view of the magnetic sensor of FIG. 25 as viewed in the direction of arrow XXVIII. As shown in FIG. 28, the circuit board 300 of the magnetic sensor 3 according to the sixth embodiment of the present invention is provided with four magnetoresistive elements electrically connected to each other by wires to form a Wheatstone bridge type bridge circuit. It is done. The four magnetoresistance elements consist of two sets of first magnetoresistance elements and second magnetoresistance elements. Specifically, the magnetic sensor 3 includes a first magnetoresistive element 320a and a second magnetoresistive element 330a, and a first magnetoresistive element 320b and a second magnetoresistive element 330b. The first magnetoresistance element 320a and the second magnetoresistance element 330a constitute one set. The first magnetoresistance element 320 b and the second magnetoresistance element 330 b constitute one set.
　図２９は、本発明の実施形態６に係る磁気センサの第１磁気抵抗素子のパターンを示す平面図である。図２８および図２９に示すように、第１磁気抵抗素子３２０ａ，３２０ｂは、絶縁層３０に直交する方向から見て、２重渦巻き状パターン３２０を有している。２重渦巻き状パターン３２０は、絶縁層３０に直交する方向から見て、仮想円の円周に沿って仮想円の径方向に並ぶように同心円状に配置されて互いに接続された２つの第１単位パターンを含む。 FIG. 29 is a plan view showing a pattern of the first magnetoresistive element of the magnetic sensor according to Embodiment 6 of the present invention. As shown in FIGS. 28 and 29, the first magnetoresistance elements 320a and 320b have a double spiral pattern 320 when viewed from the direction orthogonal to the insulating layer 30. The two double spiral patterns 320 are concentrically arranged in the radial direction of the imaginary circle along the circumference of the imaginary circle and viewed from the direction orthogonal to the insulating layer 30 and connected to each other. Includes unit patterns.
　２重渦巻き状パターン３２０は、第１単位パターンである一方の渦巻き状パターン３２１、第１単位パターンである他方の渦巻き状パターン３２２、および、一方の渦巻き状パターン３２１と他方の渦巻き状パターン３２２とを２重渦巻き状パターン３２０の中央部にて接続するＳ字状パターン３２３を含む。Ｓ字状パターン３２３は、直線状延在部を含まず、湾曲部のみから構成されている。 The double spiral pattern 320 includes one spiral pattern 321 which is a first unit pattern, the other spiral pattern 322 which is a first unit pattern, and one spiral pattern 321 and the other spiral pattern 322. Are connected at the central portion of the double spiral pattern 320. The S-shaped pattern 323 does not include a linear extending portion, and is formed only of a curved portion.
　２重渦巻き状パターン３２０は、一方の渦巻き状パターン３２１および他方の渦巻き状パターン３２２の各々の端部に、２重渦巻き状パターン３２０の長さ調整用冗長部３２４，３２５を有する。長さ調整用冗長部３２４，３２５は、一方の渦巻き状パターン３２１および他方の渦巻き状パターン３２２の各々の端部が湾曲しつつ折り返されて構成されている。一方の渦巻き状パターン３２１に設けられた長さ調整用冗長部３２４と、他方の渦巻き状パターン３２２に設けられた長さ調整用冗長部３２５とは、２重渦巻き状パターン３２０の径方向において互いに反対側に位置している。長さ調整用冗長部３２４，３２５の各々は、直線状延在部を含まず、湾曲部のみから構成されている。 The double spiral pattern 320 has redundant portions 324 and 325 for adjusting the length of the double spiral pattern 320 at the end of each spiral pattern 321 and the other spiral pattern 322. The length adjustment redundant portions 324 and 325 are configured by bending and folding the end portions of one spiral pattern 321 and the other spiral pattern 322, respectively. The length adjustment redundant portion 324 provided in one spiral pattern 321 and the length adjustment redundant portion 325 provided in the other spiral pattern 322 are mutually different in the radial direction of the double spiral pattern 320. It is located on the opposite side. Each of the length adjustment redundant portions 324 and 325 does not include a linear extending portion, and is configured only by a curved portion.
　２重渦巻き状パターン３２０は、長さ調整用冗長部３２４，３２５において、配線を構成する導電層２０と接続されている。長さ調整用冗長部３２４，３２５と導電層２０との接続位置を変更することにより、第１磁気抵抗素子３２０ａ，３２０ｂの電気抵抗値を調整することができる。 The double spiral pattern 320 is connected to the conductive layer 20 forming the wiring in the length adjustment redundant portions 324 and 325. By changing the connection position of the length adjustment redundant parts 324 and 325 and the conductive layer 20, the electric resistance value of the first magnetoresistance elements 320a and 320b can be adjusted.
　具体的には、図６に示す、磁気抵抗素子として機能する領域Ｒと、配線として機能する領域Ｌとの接続部において、導電層２０を磁気抵抗素子として機能する領域Ｒ側に延長することにより、配線として機能する領域Ｌを拡大して、第１磁気抵抗素子３２０ａ，３２０ｂの各々の電気抵抗値を低下させることができる。または、磁気抵抗素子として機能する領域Ｒと、配線として機能する領域Ｌとの接続部において、導電層２０を配線として機能する領域Ｌ側に短縮することにより、配線として機能する領域Ｌを縮小して、第１磁気抵抗素子３２０ａ，３２０ｂの各々の電気抵抗値を増加させることができる。 Specifically, in the connection portion between the region R functioning as a magnetoresistive element and the region L functioning as an interconnection shown in FIG. 6, the conductive layer 20 is extended to the region R functioning as a magnetoresistive element. The electric resistance value of each of the first magnetoresistance elements 320a and 320b can be reduced by enlarging the region L functioning as the wiring. Alternatively, in the connection portion between the region R functioning as a magnetoresistive element and the region L functioning as a wire, the conductive layer 20 is shortened to the region L functioning as a wire, thereby reducing the region L functioning as a wire. Thus, the electric resistance value of each of the first magnetoresistance elements 320a and 320b can be increased.
　上記の第１磁気抵抗素子３２０ａ，３２０ｂの電気抵抗値の調整は、導電層２０の一部を除去または追加形成することにより行なわれるため、絶縁層３０を設ける前に行なわれることが好ましい。 The adjustment of the electric resistance value of the first magnetoresistance elements 320a and 320b is performed by removing or additionally forming a part of the conductive layer 20. Therefore, the adjustment is preferably performed before the insulating layer 30 is provided.
　図２９に示すように、２重渦巻き状パターン３２０は、２重渦巻き状パターン３２０の中心点に関して略点対称の形状を有している。すなわち、２重渦巻き状パターン３２０は、２重渦巻き状パターン３２０の中心点に関して略１８０°回転対称な形状を有している。 As shown in FIG. 29, the double spiral pattern 320 has a substantially point-symmetrical shape with respect to the central point of the double spiral pattern 320. That is, the double spiral pattern 320 has a shape that is approximately 180 ° rotationally symmetric with respect to the center point of the double spiral pattern 320.
　図２８に示すように、第１磁気抵抗素子３２０ａと第１磁気抵抗素子３２０ｂとは、Ｓ字状パターン３２３の向きが互いに異なるように、２重渦巻き状パターン３２０の周方向の向きが異なっている。 As shown in FIG. 28, in the first magnetoresistance element 320a and the first magnetoresistance element 320b, the circumferential direction of the double spiral pattern 320 is different so that the directions of the S-shaped patterns 323 are different from each other. There is.
　本実施形態においては、第１磁気抵抗素子３２０ａと第１磁気抵抗素子３２０ｂとは、Ｓ字状パターン３２３の向きが互いに９０°異なるように、２重渦巻き状パターン３２０の周方向の向きが９０°異なっている。 In the present embodiment, in the first magnetoresistance element 320a and the first magnetoresistance element 320b, the circumferential direction of the double spiral pattern 320 is 90 so that the orientations of the S-shaped patterns 323 are different from each other by 90 °. ° is different.
　なお、２重渦巻き状パターン３２０は逆方向に巻いていてもよく、この場合、２重渦巻き状パターン３２０の中央部が湾曲部のみからなる逆Ｓ字状パターンで構成される。すなわち、一方の渦巻き状パターン３２１と他方の渦巻き状パターン３２２とが、逆Ｓ字状パターンによって接続される。 The double spiral pattern 320 may be wound in the reverse direction, and in this case, the central portion of the double spiral pattern 320 is formed of an inverted S-shaped pattern including only a curved portion. That is, one spiral pattern 321 and the other spiral pattern 322 are connected by the reverse S-shaped pattern.
　図３０は、本発明の実施形態６に係る磁気センサの第２磁気抵抗素子のパターンを示す平面図である。図３１は、本発明の実施形態６に係る磁気センサの第２磁気抵抗素子のパターンに含まれる第２単位パターンを示す平面図である。なお、図３０においては、第２磁気抵抗素子３３０ａ，３３０ｂが有する同一形状の３つのパターン３３０のうちの１つのみを図示している。 FIG. 30 is a plan view showing the pattern of the second magnetoresistance element of the magnetic sensor according to Embodiment 6 of the present invention. FIG. 31 is a plan view showing a second unit pattern included in the pattern of the second magnetoresistance element of the magnetic sensor according to Embodiment 6 of the present invention. In FIG. 30, only one of three patterns 330 of the same shape that the second magnetoresistance elements 330a and 330b have is illustrated.
　図２８および図３０に示すように、第２磁気抵抗素子３３０ａ，３３０ｂは、絶縁層３０に直交する方向であるＺ軸方向から見て、第１磁気抵抗素子３２０ａ，３２０ｂの外周縁より外側に位置している。 As shown in FIGS. 28 and 30, the second magnetoresistive elements 330a and 330b are located outside the outer peripheral edge of the first magnetoresistive elements 320a and 320b when viewed from the Z-axis direction which is a direction orthogonal to the insulating layer 30. positioned.
　第２磁気抵抗素子３３０ａ，３３０ｂにおいては、複数の曲部を有して折り返した８つの第２単位パターン３７０を含む同一形状の３つのパターン３３０が直列に接続されている。第２磁気抵抗素子３３０ａにおいては、同一形状の３つのパターン３３０が配線１４７によって互いに接続されている。第２磁気抵抗素子３３０ｂにおいては、同一形状の３つのパターン３３０が配線１５１によって互いに接続されている。パターン３３０は、２重渦巻き状パターン３２０より細いパターンで形成されている。これにより、第２磁気抵抗素子３３０ａ，３３０ｂにおいて、必要な電気抵抗値を確保している。第２磁気抵抗素子３３０ａ，３３０ｂの電気抵抗値が高いほど、磁気センサ３の消費電流を低減できる。 In the second magnetoresistance elements 330a and 330b, three patterns 330 of the same shape including eight second unit patterns 370 folded back having a plurality of curved portions are connected in series. In the second magnetoresistance element 330 a, three patterns 330 of the same shape are connected to each other by the wiring 147. In the second magnetoresistance element 330 b, three patterns 330 having the same shape are connected to each other by the wiring 151. The pattern 330 is formed in a thinner pattern than the double spiral pattern 320. Thereby, in the second magnetoresistance elements 330a and 330b, necessary electric resistance values are secured. The current consumption of the magnetic sensor 3 can be reduced as the electric resistance value of the second magnetoresistance elements 330a and 330b is higher.
　図３０に示すように、８つの第２単位パターン３７０は、仮想円Ｃ3上に配置されて互いに接続されている。図３１に示すように、第２単位パターン３７０は、始端部３７０ａから終端部３７０ｂまでの間に、１４個の曲部Ｂ1～Ｂ14および１５個の直線状延在部Ｌ1～Ｌ15を有して、折り返している。すなわち、第２単位パターン３７０は、始端部３７０ａおよび終端部３７０ｂを口部とした袋状の形状を有している。 As shown in FIG. 30, eight second unit patterns 370 are connected to each other are arranged on the imaginary circle C 3. As shown in FIG. 31, the second unit pattern 370 includes 14 curved portions B 1 to B 14 and 15 linear extension portions L 1 to L 15 between the start end 370 a and the end end 370 b. Have a fold. That is, the second unit pattern 370 has a bag-like shape with the start end 370a and the end end 370b as the mouth.
　本実施形態においては、第２単位パターン３７０は、１４個の曲部Ｂ1～Ｂ14の各々において直角に屈曲している。第２単位パターン３７０は、１０μｍ以上の長さの直線状延在部を含まない。すなわち、１５個の直線状延在部Ｌ1～Ｌ15の各々の長さは、１０μｍより短い。 In the present embodiment, the second unit pattern 370 is bent at a right angle in each of the 14 curved portions B 1 to B 14 . The second unit pattern 370 does not include a linear extension of 10 μm or more. That is, the length of each of the fifteen linear extensions L 1 to L 15 is shorter than 10 μm.
　ただし、第２磁気抵抗素子３３０ａ，３３０ｂのパターンは、上記に限られず、１０μｍ以上の長さの直線状延在部を含まずに複数の曲部を有して折り返した少なくとも１つの第２単位パターンを含んでいればよい。 However, the pattern of the second magnetoresistance elements 330a and 330b is not limited to the above, and includes at least one second unit having a plurality of curved portions and folded without including a linear extending portion having a length of 10 μm or more. It should just contain the pattern.
　第２磁気抵抗素子３３０ａ，３３０ｂが上記のパターンを有することにより、第２磁気抵抗素子３３０ａ，３３０ｂの磁気抵抗効果が抑制されて抵抗変化率が著しく小さくなる。その結果、第２磁気抵抗素子３３０ａ，３３０ｂの抵抗変化率が、第１磁気抵抗素子３２０ａ，３２０ｂの抵抗変化率より低くなる。 By the second magnetoresistance elements 330a and 330b having the above-described pattern, the magnetoresistance effect of the second magnetoresistance elements 330a and 330b is suppressed, and the rate of change in resistance is significantly reduced. As a result, the rate of change in resistance of the second magnetoresistance elements 330a and 330b is lower than the rate of change in resistance of the first magnetoresistance elements 320a and 320b.
　本実施形態に係る磁気センサ３においては、第１磁気抵抗素子３２０ａ，３２０ｂが２重渦巻き状パターン３２０を有している。２重渦巻き状パターン３２０は、主に略円弧状の湾曲部が巻き回されて構成されている。円弧は、多角形の角の数が無限大に大きくなった際の近似形であるため、２重渦巻き状パターン３２０を流れる電流の向きは、水平方向の略全方位(３６０°)に亘っている。よって、第１磁気抵抗素子３２０ａ，３２０ｂは、水平方向の略全方位(３６０°)に亘って、外部磁界を検出することができる。 In the magnetic sensor 3 according to the present embodiment, the first magnetoresistance elements 320 a and 320 b have a double spiral pattern 320. The double spiral pattern 320 is mainly configured by winding a substantially arc-shaped curved portion. Since the arc is an approximation when the number of polygon corners increases to infinity, the direction of the current flowing through the double spiral pattern 320 extends in substantially all directions (360 °) in the horizontal direction. There is. Therefore, the first magnetoresistance elements 320a and 320b can detect an external magnetic field over substantially all directions (360 °) in the horizontal direction.
　また、本実施形態に係る磁気センサ３においては、２重渦巻き状パターン３２０は、中央部が湾曲部のみからなるＳ字状パターン３２３で構成され、外周部が湾曲部のみからなる長さ調整用冗長部３２４，３２５で構成されている。このように、第１磁気抵抗素子３２０ａ，３２０ｂの各々は、直線状延在部を含んでいないため、磁界検出の異方性が低減されている。 Further, in the magnetic sensor 3 according to the present embodiment, the double spiral pattern 320 is formed of an S-shaped pattern 323 in which the central portion is formed of only the curved portion, and for the length adjustment of which the outer peripheral portion is formed of only the curved portion. It comprises the redundant parts 324 and 325. As described above, since each of the first magnetoresistance elements 320a and 320b does not include a linear extension, the anisotropy of magnetic field detection is reduced.
　さらに、本実施形態に係る磁気センサ３においては、第１磁気抵抗素子３２０ａ，３２０ｂの各々のＳ字状パターン３２３の向きが互いに異なるように、２重渦巻き状パターン３２０の周方向の向きが異なっていることにより、磁界検出の等方性が高くなっている。 Furthermore, in the magnetic sensor 3 according to the present embodiment, the circumferential direction of the double spiral pattern 320 is different such that the directions of the S-shaped patterns 323 of the first magnetoresistance elements 320a and 320b are different from each other. As a result, the isotropy of magnetic field detection is enhanced.
　本実施形態に係る磁気センサ３においては、第２磁気抵抗素子３３０ａ，３３０ｂの各々は、１０μｍ以上の長さの直線状延在部を含まずに１４個の曲部Ｂ1～Ｂ14の各々において直角に屈曲して、始端部３７０ａおよび終端部３７０ｂを口部とした袋状の形状を有する第２単位パターン３７０を含んでいる。 In the magnetic sensor 3 according to the present embodiment, each of the second magnetoresistance elements 330a and 330b does not include a linear extending portion having a length of 10 μm or more, and each of the 14 curved portions B 1 to B 14 , And includes a second unit pattern 370 having a bag-like shape with the start end 370a and the end 370b as a mouth.
　これにより、第２単位パターン３７０を流れる電流の向きを水平方向において分散させて、第２磁気抵抗素子３３０ａ，３３０ｂの磁気抵抗効果の異方性を低減することができる。また、外部磁界が０である時の磁気センサ３の出力が、残留磁化の影響によってばらつくことを抑制することができる。 Thereby, the direction of the current flowing through the second unit pattern 370 can be dispersed in the horizontal direction, and the anisotropy of the magnetoresistance effect of the second magnetoresistance elements 330a and 330b can be reduced. In addition, it is possible to suppress that the output of the magnetic sensor 3 when the external magnetic field is 0 disperses due to the influence of the residual magnetization.
　さらに、複数の第２単位パターン３７０が仮想円Ｃ3上に配置されていることによって、パターン３３０を流れる電流の向きを水平方向において分散させて、第２磁気抵抗素子３３０ａ，３３０ｂの磁気抵抗効果の異方性を低減することができる。 Moreover, by a plurality of second unit patterns 370 are arranged on the imaginary circle C 3, the direction of the current flowing through the pattern 330 are dispersed in the horizontal direction, the second magneto resistive element 330a, the magnetoresistance effect of 330b Anisotropy can be reduced.
　本実施形態に係る磁気センサ３においても、第１磁気抵抗素子３２０ａ，３２０ｂと第２磁気抵抗素子３３０ａ，３３０ｂとを接続する配線を立体的に引き回す必要がないため、簡易な製造プロセスで回路基板３００を製造可能である。 Also in the magnetic sensor 3 according to the present embodiment, it is not necessary to three-dimensionally draw the wiring connecting the first magnetoresistance elements 320a and 320b and the second magnetoresistance elements 330a and 330b, so the circuit board can be manufactured by a simple manufacturing process. 300 can be manufactured.
　パターン３３０が２重渦巻き状パターン３２０より細いパターンで形成されているため、第２磁気抵抗素子３３０ａ，３３０ｂの磁気抵抗効果が抑制され、第２磁気抵抗素子３３０ａ，３３０ｂの抵抗変化率が著しく小さくなる。 Since the pattern 330 is formed thinner than the double spiral pattern 320, the magnetoresistance effect of the second magnetoresistance elements 330a and 330b is suppressed, and the rate of change in resistance of the second magnetoresistance elements 330a and 330b is extremely small. Become.
　これにより、磁気センサ３に外部磁界が印加された際に中点１４０と中点１４１との間に発生する電位差を大きくして、磁気センサ３の検出感度を高くできる。また、第２磁気抵抗素子３３０ａ，３３０ｂの電気抵抗値が高いため、磁気センサ３に高い磁界強度の外部磁界が印加された際の中点１４０と中点１４１との間に発生する電位差の減少が比較的小さく、磁気センサ３の出力特性を安定させることができる。 Thus, the detection sensitivity of the magnetic sensor 3 can be increased by increasing the potential difference generated between the midpoint 140 and the midpoint 141 when an external magnetic field is applied to the magnetic sensor 3. Further, since the electric resistance value of the second magnetoresistance elements 330a and 330b is high, a reduction in the potential difference generated between the midpoint 140 and the midpoint 141 when an external magnetic field of high magnetic field strength is applied to the magnetic sensor 3 Is relatively small, and the output characteristics of the magnetic sensor 3 can be stabilized.
　本実施形態に係る磁気センサ３においては、絶縁層３０上に２つの第１磁性体部材４０と２つの第２磁性体部材５０が配置されている。第１磁性体部材４０および第２磁性体部材５０の各々の厚さは、たとえば、１０μｍ以上、好ましくは、２０μｍ以上１５０μｍ以下である。なお、これらの厚さは互いに異なっていてもよいが、これらの厚さが互いに同一である場合には、２つの第１磁性体部材４０と２つの第２磁性体部材５０とを同一の工程において形成することができ、２つの第１磁性体部材４０および２つの第２磁性体部材５０を容易に形成できる。 In the magnetic sensor 3 according to the present embodiment, two first magnetic members 40 and two second magnetic members 50 are disposed on the insulating layer 30. The thickness of each of the first magnetic member 40 and the second magnetic member 50 is, for example, 10 μm or more, preferably 20 μm or more and 150 μm or less. The thicknesses may be different from each other, but in the case where the thicknesses are the same, the two first magnetic members 40 and the two second magnetic members 50 are processed in the same step. The two first magnetic members 40 and the two second magnetic members 50 can be easily formed.
　図２８に示すように、第１磁性体部材４０は、絶縁層３０に直交する方向から見て、円形の外形を有し、かつ、第１磁気抵抗素子３２０ａ，３２０ｂの外周縁より内側の領域に位置している。本実施形態においては、第１磁性体部材４０は、絶縁層３０に直交する方向から見て、第１磁気抵抗素子３２０ａ，３２０ｂの外周縁と同心状に位置している。 As shown in FIG. 28, the first magnetic member 40 has a circular outer shape when viewed in the direction orthogonal to the insulating layer 30, and is a region inside the outer peripheral edge of the first magnetoresistance elements 320a and 320b. It is located in In the present embodiment, the first magnetic member 40 is located concentrically with the outer peripheral edge of the first magnetoresistive elements 320 a and 320 b when viewed from the direction orthogonal to the insulating layer 30.
　本実施形態においては、第１磁性体部材４０は、絶縁層３０に直交する方向から見て、第１磁気抵抗素子３２０ａ，３２０ｂおよび第２磁気抵抗素子３３０ａ，３３０ｂのうちの第１磁気抵抗素子３２０ａ，３２０ｂの中央部のみを覆っている。よって、絶縁層３０に直交する方向から見て、第１磁性体部材４０は、第１磁気抵抗素子３２０ａ，３２０ｂの外周部に囲まれている。 In the present embodiment, when viewed from the direction perpendicular to the insulating layer 30, the first magnetic member 40 is the first magnetoresistive element of the first magnetoresistive elements 320a and 320b and the second magnetoresistive elements 330a and 330b. It covers only the central part of 320a and 320b. Therefore, as viewed in the direction orthogonal to the insulating layer 30, the first magnetic member 40 is surrounded by the outer peripheral portions of the first magnetoresistance elements 320a and 320b.
　第２磁性体部材５０は、絶縁層３０に直交する方向から見て、第１磁気抵抗素子３２０ａ，３２０ｂおよび第２磁気抵抗素子３３０ａ，３３０ｂのうちの第２磁気抵抗素子３３０ａ，３３０ｂのみを覆っている。第２磁気抵抗素子３３０ａ，３３０ｂは、絶縁層３０に直交する方向から見て、第２磁性体部材５０の中心から、第２磁性体部材５０の外周縁から内側に７μｍ離れた位置までの、領域に位置していることが好ましい。第２磁性体部材５０は、電磁鋼、軟鉄鋼、ケイ素鋼、パーマロイ、スーパーマロイ、ニッケル合金、鉄合金またはフェライトなどの、透磁率および飽和磁束密度の高い磁性体材料で構成されている。また、これらの磁性体材料は、保磁力が低いことが好ましい。 The second magnetic member 50 covers only the second magnetoresistance elements 330a and 330b of the first magnetoresistance elements 320a and 320b and the second magnetoresistance elements 330a and 330b, as viewed from the direction orthogonal to the insulating layer 30. ing. The second magnetoresistive elements 330 a and 330 b are each positioned 7 μm away from the center of the second magnetic member 50 from the outer peripheral edge of the second magnetic member 50 as viewed in the direction orthogonal to the insulating layer 30. It is preferable to be located in the area. The second magnetic member 50 is made of a magnetic material having high magnetic permeability and high saturation magnetic flux density, such as electromagnetic steel, mild steel, silicon steel, permalloy, supermalloy, nickel alloy, iron alloy or ferrite. In addition, these magnetic materials preferably have low coercivity.
　本発明の実施形態６に係る磁気センサ３は、垂直磁界による第２磁気抵抗素子３３０ａ，３３０ｂの抵抗変化を抑制しつつ、第１磁性体部材４０によって第１磁気抵抗素子３２０ａ，３２０ｂの垂直磁界の検出感度を高めることができる。 The magnetic sensor 3 according to the sixth embodiment of the present invention suppresses the resistance change of the second magnetoresistance elements 330a and 330b due to the perpendicular magnetic field, and the perpendicular magnetic field of the first magnetoresistance elements 320a and 320b by the first magnetic member 40. Detection sensitivity can be increased.
　また、本発明の実施形態６に係る磁気センサ３は、第２磁性体部材５０によって水平磁界による第２磁気抵抗素子３３０ａ，３３０ｂの抵抗変化を抑制しつつ、第１磁性体部材４０によって第１磁気抵抗素子３２０ａ，３２０ｂの水平磁界の検出感度を高めることができる。 In the magnetic sensor 3 according to the sixth embodiment of the present invention, the first magnetic body member 40 performs the first magnetic body member 40 while suppressing the resistance change of the second magnetoresistive elements 330 a and 330 b due to the horizontal magnetic field. The detection sensitivity of the horizontal magnetic field of the magnetoresistive elements 320a and 320b can be enhanced.
　第１磁性体部材４０によって第１磁気抵抗素子３２０ａ，３２０ｂの水平磁界の検出感度を高めることができる理由は、第１磁性体部材４０に覆われていることにより第１磁気抵抗素子３２０ａ，３２０ｂの中央部に印加される水平磁界の強度は低くなるが、第１磁気抵抗素子３２０ａ，３２０ｂの中央部より円周が長くパターン全体に占める抵抗値の比率が大きい第１磁気抵抗素子３２０ａ，３２０ｂの外周部に、第１磁性体部材４０から高い磁界強度で放出された水平方向の磁界が印加されるため、全体的に見ると、第１磁性体部材４０によって第１磁気抵抗素子３２０ａ，３２０ｂに印加される水平磁界の強度が高くなるためである。 The reason why the detection sensitivity of the horizontal magnetic field of the first magnetoresistance elements 320a and 320b can be enhanced by the first magnetic body member 40 is that the first magnetoresistance elements 320a and 320b are covered by the first magnetic body member 40. Although the strength of the horizontal magnetic field applied to the central portion of the first magnetic resistance element 320a, 320b is longer than the central portions of the first magnetic resistance elements 320a, 320b, the ratio of the resistance value in the entire pattern is large. Since the horizontal magnetic field emitted from the first magnetic member 40 at a high magnetic field strength is applied to the outer peripheral portion of the first magnetic member 40, the first magnetic resistance members 320a and 320b The intensity of the horizontal magnetic field applied to the
　本実施形態に係る磁気センサ３においても、垂直磁界および水平磁界を高感度に検出することができる。また、本発明の実施形態６に係る磁気センサ３は、第１磁気抵抗素子３２０ａ，３２０ｂが同心円状に配置された複数の第１単位パターンを含むことにより、水平磁界の検出の等方性が高い。 Also in the magnetic sensor 3 according to the present embodiment, the vertical magnetic field and the horizontal magnetic field can be detected with high sensitivity. In the magnetic sensor 3 according to the sixth embodiment of the present invention, by including the plurality of first unit patterns in which the first magnetoresistance elements 320a and 320b are arranged concentrically, the isotropy of detection of the horizontal magnetic field is obtained. high.
　なお、本実施形態においては、第２磁気抵抗素子３３０ａ，３３０ｂは、第２磁性体部材５０により磁気シールドされて、垂直磁界および水平磁界をほとんど検出しないため、必ずしも第２磁気抵抗素子３３０ａ，３３０ｂの抵抗変化率が、第１磁気抵抗素子３２０ａ，３２０ｂの抵抗変化率より小さくなくてもよい。 In the present embodiment, since the second magnetoresistance elements 330a and 330b are magnetically shielded by the second magnetic member 50 and hardly detect the vertical magnetic field and the horizontal magnetic field, the second magnetoresistance elements 330a and 330b are not necessarily detected. The rate of change in resistance may not be smaller than the rate of change in resistance of the first magnetoresistance elements 320a and 320b.
　本発明の実施形態６に係る磁気センサ３においては、第２磁性体部材５０と回路基板３００との間に、第２導電体部７０が設けられており、第２導電体部７０には、絶縁層３０に直交する方向であるＺ軸方向から見て、貫通孔７０ｈが設けられている。 In the magnetic sensor 3 according to the sixth embodiment of the present invention, the second conductor portion 70 is provided between the second magnetic member 50 and the circuit board 300, and the second conductor portion 70 includes: As viewed in the Z-axis direction which is a direction orthogonal to the insulating layer 30, the through holes 70h are provided.
　これにより、第２導電体部７０と回路基板３００との接触面積を低減することができるとともに、第２導電体部７０と絶縁層３０との接触界面に作用する応力を分散することができる。その結果、第２磁性体部材５０から第２導電体部７０を通じて第２磁気抵抗素子１３０ａ，１３０ｂに作用する応力を低減することができ、磁気センサの出力精度が低下することを抑制できる。また、第２磁性体部材５０から第２導電体部７０を通じて絶縁層３０に作用する応力によって絶縁層３０に亀裂が発生することを抑制できる。これにより、磁気センサ３の信頼性が低下することを抑制できる。 Thus, the contact area between the second conductor portion 70 and the circuit board 300 can be reduced, and the stress acting on the contact interface between the second conductor portion 70 and the insulating layer 30 can be dispersed. As a result, the stress acting on the second magnetoresistance elements 130a and 130b from the second magnetic member 50 through the second conductor portion 70 can be reduced, and a decrease in the output accuracy of the magnetic sensor can be suppressed. In addition, generation of a crack in the insulating layer 30 due to the stress acting on the insulating layer 30 from the second magnetic member 50 through the second conductor portion 70 can be suppressed. Thereby, it can suppress that the reliability of the magnetic sensor 3 falls.
　本発明の実施形態６に係る磁気センサ３においても、磁気抵抗素子を用いて、水平磁界の検出の等方性が高く、微弱な垂直磁界も検出することができるとともに、磁気抵抗素子の上方に設けられた構造体から磁気抵抗素子に作用する応力によって出力精度が低下することを抑制できる。なお、第２磁性体部材５０に、実施形態４に係る第１磁性体部材４０の構成を適用してもよい。この場合、磁気センサ３は、第２導電体部７０を備えない。 Also in the magnetic sensor 3 according to the sixth embodiment of the present invention, using the magnetoresistive element, the isotropy of detection of the horizontal magnetic field is high, and a weak vertical magnetic field can be detected, and above the magnetoresistive element It is possible to suppress the decrease in output accuracy due to the stress acting on the magnetoresistive element from the provided structure. The configuration of the first magnetic member 40 according to the fourth embodiment may be applied to the second magnetic member 50. In this case, the magnetic sensor 3 does not include the second conductor portion 70.
　(実施形態７)
　以下、本発明の実施形態７に係る磁気センサについて図を参照して説明する。なお、本発明の実施形態７に係る磁気センサは、第１磁気抵抗素子および第２磁気抵抗素子の各々のパターンが主に、本発明の実施形態６に係る磁気センサ３と異なるため、本発明の実施形態６に係る磁気センサ３と同様である構成については説明を繰り返さない。 Seventh Embodiment
Hereinafter, a magnetic sensor according to Embodiment 7 of the present invention will be described with reference to the drawings. The magnetic sensor according to the seventh embodiment of the present invention is different from the magnetic sensor 3 according to the sixth embodiment of the present invention mainly in the pattern of each of the first and second magnetoresistance elements. The description of the same configuration as that of the magnetic sensor 3 according to the sixth embodiment will not be repeated.
　図３２は、本発明の実施形態７に係る磁気センサの構成を示す斜視図である。図３３は、図３２の磁気センサを矢印ＸＸＸＩＩＩ方向から見た平面図である。図３２および図３３に示すように、本発明の実施形態７に係る磁気センサ４は、回路基板４００と、回路基板４００の上方に設けられた、２つの第１磁性体部材４０および２つの第２磁性体部材５０とを備える。本発明の実施形態７に係る磁気センサ４においては、回路基板４００上に２つの第１導電体部６０および２つの第２導電体部７０が設けられている。回路基板４００の表層には、絶縁層３０が設けられており、２つの第１導電体部６０および２つの第２導電体部７０の各々は、絶縁層３０上に位置している。第１磁性体部材４０は、絶縁層３０に直交する方向であるＺ軸方向から見て、対応する第１導電体部６０を覆っている。第２磁性体部材５０は、絶縁層３０に直交する方向であるＺ軸方向から見て、対応する第２導電体部７０を覆っている。 FIG. 32 is a perspective view showing a configuration of a magnetic sensor according to Embodiment 7 of the present invention. FIG. 33 is a plan view of the magnetic sensor of FIG. 32 as viewed in the direction of arrow XXXIII. As shown in FIGS. 32 and 33, the magnetic sensor 4 according to the seventh embodiment of the present invention includes a circuit board 400, two first magnetic members 40 and two first magnetic members 40 provided above the circuit board 400. And 2 a magnetic member 50. In the magnetic sensor 4 according to the seventh embodiment of the present invention, two first conductor parts 60 and two second conductor parts 70 are provided on the circuit board 400. The insulating layer 30 is provided on the surface layer of the circuit board 400, and each of the two first conductor parts 60 and the two second conductor parts 70 is located on the insulating layer 30. The first magnetic member 40 covers the corresponding first conductor portion 60 as viewed in the Z-axis direction which is a direction orthogonal to the insulating layer 30. The second magnetic member 50 covers the corresponding second conductor portion 70 as viewed in the Z-axis direction which is a direction orthogonal to the insulating layer 30.
　本発明の実施形態７に係る磁気センサ４の回路基板４００には、互いに配線によって電気的に接続されてホイートストンブリッジ型のブリッジ回路を構成する４つの磁気抵抗素子が設けられている。４つの磁気抵抗素子は、２組の第１磁気抵抗素子および第２磁気抵抗素子からなる。具体的には、磁気センサ４は、第１磁気抵抗素子４２０ａおよび第２磁気抵抗素子４３０ａと、第１磁気抵抗素子４２０ｂおよび第２磁気抵抗素子４３０ｂとを含んでいる。 The circuit board 400 of the magnetic sensor 4 according to the seventh embodiment of the present invention is provided with four magnetoresistive elements which are electrically connected to each other by wires to form a Wheatstone bridge type bridge circuit. The four magnetoresistance elements consist of two sets of first magnetoresistance elements and second magnetoresistance elements. Specifically, the magnetic sensor 4 includes a first magnetoresistance element 420a and a second magnetoresistance element 430a, and a first magnetoresistance element 420b and a second magnetoresistance element 430b.
　第１磁気抵抗素子４２０ａ，４２０ｂは、絶縁層３０に直交する方向から見て、２重渦巻き状パターンを有している。２重渦巻き状パターンは、絶縁層３０に直交する方向から見て、仮想円の円周に沿って仮想円の径方向に並ぶように同心円状に配置されて互いに接続された２つの第１単位パターンを含む。 The first magnetoresistance elements 420 a and 420 b have a double spiral pattern as viewed from the direction orthogonal to the insulating layer 30. The two double spiral patterns are arranged concentrically so as to be arranged in the radial direction of the imaginary circle along the circumference of the imaginary circle when viewed in the direction orthogonal to the insulating layer 30, and connected to each other. Including patterns.
　２重渦巻き状パターンは、第１単位パターンである一方の渦巻き状パターン、第１単位パターンである他方の渦巻き状パターン、および、一方の渦巻き状パターンと他方の渦巻き状パターンとを２重渦巻き状パターンの中央部にて連結するＳ字状パターンを含む。Ｓ字状パターンは、直線状延在部を含まず、湾曲部のみから構成されている。 The double spiral pattern is a double spiral of one spiral pattern which is a first unit pattern, the other spiral pattern which is a first unit pattern, and one spiral pattern and the other spiral pattern. It includes an S-shaped pattern connected at the center of the pattern. The S-shaped pattern does not include a linear extension, and is formed only of a curved portion.
　第１磁気抵抗素子４２０ａと第１磁気抵抗素子４２０ｂとは、Ｓ字状パターンの向きが互いに異なるように、２重渦巻き状パターンの周方向の向きが異なっている。 The first magnetoresistance element 420a and the first magnetoresistance element 420b have different directions in the circumferential direction of the double spiral pattern so that the directions of the S-shaped patterns are different from each other.
　本実施形態においては、第１磁気抵抗素子４２０ａと第１磁気抵抗素子４２０ｂとは、Ｓ字状パターンの向きが互いに９０°異なるように、２重渦巻き状パターンの周方向の向きが９０°異なっている。 In the present embodiment, the first magnetoresistive element 420a and the first magnetoresistive element 420b have a 90 ° difference in the circumferential direction of the double spiral pattern such that the S-shaped pattern has a 90 ° difference in direction. ing.
　なお、２重渦巻き状パターンは逆方向に巻いていてもよく、この場合、２重渦巻き状パターンの中央部が湾曲部のみからなる逆Ｓ字状パターンで構成される。すなわち、一方の渦巻き状パターンと他方の渦巻き状パターンとが、逆Ｓ字状パターンによって接続される。 The double spiral pattern may be wound in the opposite direction, and in this case, the central portion of the double spiral pattern is formed of an inverted S-shaped pattern including only a curved portion. That is, one spiral pattern and the other spiral pattern are connected by the reverse S-shaped pattern.
　図３３に示すように、第２磁気抵抗素子４３０ａ，４３０ｂは、絶縁層３０に直交する方向から見て、第１磁気抵抗素子４２０ａ，４２０ｂの外周縁より外側に位置している。第２磁気抵抗素子４３０ａ，４３０ｂは、絶縁層３０に直交する方向から見て、ミアンダ状パターンを有している。第２磁気抵抗素子４３０ａ，４３０ｂのミアンダ状パターンは、第１磁気抵抗素子４２０ａ，４２０ｂの２重渦巻き状パターンと同じ太さで形成されている。ただし、第２磁気抵抗素子４３０ａ，４３０ｂのミアンダ状パターンの太さが、第１磁気抵抗素子４２０ａ，４２０ｂの２重渦巻き状パターンの太さより細くてもよい。 As shown in FIG. 33, the second magnetoresistance elements 430a and 430b are located outside the outer peripheral edge of the first magnetoresistance elements 420a and 420b when viewed from the direction orthogonal to the insulating layer 30. The second magnetoresistance elements 430 a and 430 b have a meandering pattern as viewed from the direction orthogonal to the insulating layer 30. The meandering pattern of the second magnetoresistance elements 430a and 430b is formed to have the same thickness as the double spiral pattern of the first magnetoresistance elements 420a and 420b. However, the thickness of the meandering pattern of the second magnetoresistance elements 430a and 430b may be thinner than the thickness of the double spiral pattern of the first magnetoresistance elements 420a and 420b.
　図３３に示すように、第１磁性体部材４０は、絶縁層３０に直交する方向から見て、円形の外形を有し、かつ、第１磁気抵抗素子４２０ａ，４２０ｂの外周縁より内側の領域に位置している。本実施形態においては、第１磁性体部材４０は、絶縁層３０に直交する方向から見て、第１磁気抵抗素子４２０ａ，４２０ｂの外周縁と同心状に位置している。 As shown in FIG. 33, the first magnetic member 40 has a circular outer shape when viewed in the direction orthogonal to the insulating layer 30, and is a region inside the outer peripheral edge of the first magnetoresistance elements 420a and 420b. It is located in In the present embodiment, the first magnetic member 40 is concentric with the outer peripheral edge of the first magnetoresistance elements 420 a and 420 b when viewed from the direction orthogonal to the insulating layer 30.
　本実施形態においては、第１磁性体部材４０は、絶縁層３０に直交する方向から見て、第１磁気抵抗素子４２０ａ，４２０ｂおよび第２磁気抵抗素子４３０ａ，４３０ｂのうちの第１磁気抵抗素子４２０ａ，４２０ｂの中央部のみを覆っている。よって、絶縁層３０に直交する方向から見て、第１磁性体部材４０は、第１磁気抵抗素子４２０ａ，４２０ｂの外周部に囲まれている。 In the present embodiment, when viewed from the direction perpendicular to the insulating layer 30, the first magnetic member 40 is the first magnetoresistive element of the first magnetoresistive elements 420a and 420b and the second magnetoresistive elements 430a and 430b. It covers only the central part of 420a and 420b. Therefore, when viewed in the direction orthogonal to the insulating layer 30, the first magnetic member 40 is surrounded by the outer peripheral portions of the first magnetoresistance elements 420a and 420b.
　第２磁性体部材５０は、絶縁層３０に直交する方向から見て、第１磁気抵抗素子４２０ａ，４２０ｂおよび第２磁気抵抗素子４３０ａ，４３０ｂのうちの第２磁気抵抗素子４３０ａ，４３０ｂのみを覆っている。 The second magnetic member 50 covers only the second magnetoresistance elements 430a and 430b of the first magnetoresistance elements 420a and 420b and the second magnetoresistance elements 430a and 430b, as viewed from the direction orthogonal to the insulating layer 30. ing.
　本発明の実施形態７に係る磁気センサ４は、垂直磁界による第２磁気抵抗素子４３０ａ，４３０ｂの抵抗変化を抑制しつつ、第１磁性体部材４０によって第１磁気抵抗素子４２０ａ，４２０ｂの垂直磁界の検出感度を高めることができる。 The magnetic sensor 4 according to the seventh embodiment of the present invention suppresses the resistance change of the second magnetoresistance elements 430a and 430b due to the perpendicular magnetic field, and the perpendicular magnetic field of the first magnetoresistance elements 420a and 420b by the first magnetic member 40. Detection sensitivity can be increased.
　また、本発明の実施形態７に係る磁気センサ４は、第２磁性体部材５０によって水平磁界による第２磁気抵抗素子４３０ａ，４３０ｂの抵抗変化を抑制しつつ、第１磁性体部材４０によって第１磁気抵抗素子４２０ａ，４２０ｂの水平磁界の検出感度を高めることができる。 In the magnetic sensor 4 according to the seventh embodiment of the present invention, the first magnetic body member 40 performs the first magnetic body member 40 while suppressing the resistance change of the second magnetoresistive elements 430 a and 430 b due to the horizontal magnetic field. The detection sensitivity of the horizontal magnetic field of the magnetoresistive elements 420a and 420b can be enhanced.
　本実施形態に係る磁気センサ４においても、垂直磁界および水平磁界を高感度に検出することができる。また、本発明の実施形態７に係る磁気センサ４は、第１磁気抵抗素子４２０ａ，４２０ｂが同心円状に配置された複数の第１単位パターンを含むことにより、水平磁界の検出の等方性が高い。 Also in the magnetic sensor 4 according to the present embodiment, the vertical magnetic field and the horizontal magnetic field can be detected with high sensitivity. Further, the magnetic sensor 4 according to Embodiment 7 of the present invention includes a plurality of first unit patterns in which the first magnetoresistance elements 420a and 420b are arranged concentrically, so that the isotropy of detection of the horizontal magnetic field is obtained. high.
　なお、本実施形態においては、第２磁気抵抗素子４３０ａ，４３０ｂは、第２磁性体部材５０により磁気シールドされて、垂直磁界および水平磁界をほとんど検出しないため、必ずしも第２磁気抵抗素子４３０ａ，４３０ｂの抵抗変化率が、第１磁気抵抗素子４２０ａ，４２０ｂの抵抗変化率より小さくなくてもよい。 In the present embodiment, since the second magnetoresistance elements 430a and 430b are magnetically shielded by the second magnetic member 50 and hardly detect the vertical magnetic field and the horizontal magnetic field, the second magnetoresistance elements 430a and 430b are not necessarily detected. The rate of change in resistance does not have to be smaller than the rate of change in resistance of the first magnetoresistance elements 420a and 420b.
　本発明の実施形態７に係る磁気センサ４においても、磁気抵抗素子を用いて、水平磁界の検出の等方性が高く、微弱な垂直磁界も検出することができるとともに、磁気抵抗素子の上方に設けられた構造体から磁気抵抗素子に作用する応力によって出力精度が低下することを抑制できる。 Also in the magnetic sensor 4 according to the seventh embodiment of the present invention, using the magnetoresistive element, the isotropy of detection of the horizontal magnetic field is high, and a weak vertical magnetic field can be detected, and above the magnetoresistive element It is possible to suppress the decrease in output accuracy due to the stress acting on the magnetoresistive element from the provided structure.
　(実施形態８)
　以下、本発明の実施形態８に係る磁気センサについて図を参照して説明する。なお、本発明の実施形態８に係る磁気センサは、第１磁気抵抗素子および第２磁気抵抗素子のパターン、並びに、第１磁性体部材の形状が主に、本発明の実施形態１に係る磁気センサ１と異なるため、本発明の実施形態１に係る磁気センサ１と同様である構成については説明を繰り返さない。 (Embodiment 8)
Hereinafter, a magnetic sensor according to Embodiment 8 of the present invention will be described with reference to the drawings. In the magnetic sensor according to the eighth embodiment of the present invention, the patterns of the first and second magnetic resistance elements and the shape of the first magnetic member mainly refer to the magnetic sensor according to the first embodiment of the present invention. The configuration is the same as that of the magnetic sensor 1 according to the first embodiment of the present invention, and therefore the description will not be repeated.
　図３４は、本発明の実施形態８に係る磁気センサの構成を示す平面図である。図３５は、本発明の実施形態８に係る磁気センサの第１磁気抵抗素子のパターンを示す平面図である。図３６は、本発明の実施形態８に係る磁気センサの第２磁気抵抗素子のパターンを示す平面図である。 FIG. 34 is a plan view showing the configuration of the magnetic sensor according to Embodiment 8 of the present invention. FIG. 35 is a plan view showing a pattern of the first magnetoresistive element of the magnetic sensor according to Embodiment 8 of the present invention. FIG. 36 is a plan view showing a pattern of the second magnetoresistance element of the magnetic sensor according to Embodiment 8 of the present invention.
　図３４に示すように、本発明の実施形態８に係る磁気センサ５は、回路基板５００と、回路基板５００の上方に設けられた２つの第１磁性体部材４５とを備える。本発明の実施形態８に係る磁気センサ５においては、回路基板５００上に２つの第１導電体部が設けられている。第１磁性体部材４５は、絶縁層３０に直交する方向であるＺ軸方向から見て、対応する第１導電体部を覆っている。第１導電体部は、絶縁層３０に直交する方向であるＺ軸方向から見て、略正八角形の外形を有する。第１導電体部の中心には、絶縁層３０に直交する方向であるＺ軸方向に貫通した、貫通孔が設けられている。 As shown in FIG. 34, the magnetic sensor 5 according to Embodiment 8 of the present invention includes a circuit board 500 and two first magnetic members 45 provided above the circuit board 500. In the magnetic sensor 5 according to Embodiment 8 of the present invention, two first conductor portions are provided on the circuit board 500. The first magnetic member 45 covers the corresponding first conductive portion as viewed in the Z-axis direction which is a direction orthogonal to the insulating layer 30. The first conductor portion has a substantially regular octagonal outer shape when viewed from the Z-axis direction which is a direction orthogonal to the insulating layer 30. At the center of the first conductor portion, a through hole penetrating in the Z-axis direction which is a direction orthogonal to the insulating layer 30 is provided.
　図３４および図３５に示すように、本発明の実施形態８に係る磁気センサ５の第１磁気抵抗素子５２０ａ，５２０ｂのパターンは、絶縁層３０に直交する方向から見て、仮想円Ｃ5の円周に沿って仮想円Ｃ5の径方向に並ぶように配置されて互いに接続された４つの第１単位パターンを含む。４つの第１単位パターンの各々は、仮想円Ｃ5の円周において配線１４６，１４８，１５０，１５２が位置する部分が開放した仮想Ｃ字形状Ｃ51に沿って位置している。４つの第１単位パターンの各々は、仮想Ｃ字形状Ｃ51に沿って仮想円Ｃ5の径方向に並ぶように同心状に配置されたＣ字状パターン５２１である。 As shown in FIGS. 34 and 35, the first magneto resistive element 520a of the magnetic sensor 5 according to Embodiment 8 of the present invention, the pattern of 520b, when viewed from a direction perpendicular to the insulating layer 30, the imaginary circle C 5 includes four first unit patterns connected to each other are arranged side by side in the radial direction of the virtual circle C 5 along the circumference. Each of the four first unit pattern is located along a virtual C-shape C 51 which portion positioned wiring 146,148,150,152 in the circumference of the virtual circle C 5 is opened. Each of the four first unit pattern is a C-shaped pattern 521 which is arranged concentrically so as to be arranged in a radial direction of the virtual circle C 5 along the virtual C-shape C 51.
　４つのＣ字状パターン５２１は、内側から順に一端と他端とで交互に互いに接続されている。一端同士が接続されているＣ字状パターン５２１は、仮想円Ｃ5の径方向に延びる直線状パターン５２２によって互いに接続されている。他端同士が接続されているＣ字状パターン５２１は、仮想円Ｃ5の径方向に延びる直線状パターン５２３によって互いに接続されている。 The four C-shaped patterns 521 are alternately connected to each other at one end and the other end sequentially from the inside. C-shaped pattern 521 which one ends are connected, are connected to each other by linear pattern 522 extending in the radial direction of the virtual circle C 5. C-shaped pattern 521 and the other end are connected to each other are connected to each other by a linear pattern 523 extending in the radial direction of the virtual circle C 5.
　第１磁気抵抗素子５２０ａ，５２０ｂのパターン５２０は、２つの直線状パターン５２２および１つの直線状パターン５２３を含む。これにより、４つのＣ字状パターン５２１が直列に接続されている。 The pattern 520 of the first magnetoresistance elements 520 a and 520 b includes two linear patterns 522 and one linear pattern 523. Thus, four C-shaped patterns 521 are connected in series.
　最も外側に位置するＣ字状パターン５２１の外周縁が、第１磁気抵抗素子５２０ａ，５２０ｂの外周縁となる。最も内側に位置するＣ字状パターン５２１の内周縁が、第１磁気抵抗素子５２０ａ，５２０ｂの内周縁となる。 The outer peripheral edge of the outermost C-shaped pattern 521 is the outer peripheral edge of the first magnetoresistance elements 520a and 520b. The inner peripheral edge of the C-shaped pattern 521 located at the innermost side becomes the inner peripheral edge of the first magnetoresistance elements 520a and 520b.
　図３４に示すように、第１磁気抵抗素子５２０ａと第１磁気抵抗素子５２０ｂとは、仮想Ｃ字形状Ｃ51の向きが互いに異なるように周方向の向きが異なっている。すなわち、第１磁気抵抗素子５２０ａと第１磁気抵抗素子５２０ｂとは、Ｃ字状パターン５２１の向きが互いに異なるように、パターン５２０の周方向の向きが異なっている。 As shown in FIG. 34, the first magnetoresistance element 520a and the first magnetoresistance element 520b have different circumferential directions such that the virtual C-shape C 51 has a different orientation. That is, the first magnetoresistance element 520a and the first magnetoresistance element 520b have different circumferential directions of the pattern 520 such that the C-shaped patterns 521 have different directions.
　本実施形態においては、第１磁気抵抗素子５２０ａと第１磁気抵抗素子５２０ｂとは、Ｃ字状パターン５２１の向きが互いに９０°異なるように、パターン５２０の周方向の向きが９０°異なっている。 In the present embodiment, the first magnetoresistance element 520 a and the first magnetoresistance element 520 b have the circumferential direction of the pattern 520 different by 90 ° such that the C-shaped patterns 521 are different from each other by 90 °. .
　図３４および図３６に示すように、第２磁気抵抗素子５３０ａ，５３０ｂは、絶縁層３０に直交する方向から見て、仮想円Ｃ5の中心側に位置し、第１磁気抵抗素子５２０ａ，５２０ｂに囲まれている。すなわち、第２磁気抵抗素子５３０ａ，５３０ｂは、絶縁層３０に直交する方向から見て、第１磁気抵抗素子５２０ａ，５２０ｂの内周縁より内側に位置している。 As shown in FIGS. 34 and 36, the second magnetoresistance element 530a, 530b, when viewed from a direction perpendicular to the insulating layer 30, situated in the center of the virtual circle C 5, first magnetoresistive element 520a, 520b It is surrounded by That is, the second magnetoresistive elements 530 a and 530 b are located inside the inner peripheral edge of the first magnetoresistive elements 520 a and 520 b when viewed in the direction orthogonal to the insulating layer 30.
　第２磁気抵抗素子５３０ａは、仮想円Ｃ5の中心側から仮想円Ｃ5の外側まで繋がった配線１４６，１４８と接続されている。第２磁気抵抗素子５３０ｂは、仮想円Ｃ5の中心側から仮想円Ｃ5の外側まで繋がった配線１５０，１５２と接続されている。 Second magnetoresistance element 530a is connected to the wiring 146, 148 led from the center of the virtual circle C 5 to the outside of the virtual circle C 5. Second magnetoresistance element 530b is connected to the wiring 150, 152 led from the center of the virtual circle C 5 to the outside of the virtual circle C 5.
　第２磁気抵抗素子５３０ａ，５３０ｂは、絶縁層３０に直交する方向から見て、２重渦巻き状パターン５３０を有している。２重渦巻き状パターン５３０は、２つの第２単位パターンのうちの１つである一方の渦巻き状パターン５３１、２つの第２単位パターンのうちの他の１つである他方の渦巻き状パターン５３２、および、一方の渦巻き状パターン５３１と他方の渦巻き状パターン５３２とを２重渦巻き状パターン５３０の中央部にて接続する逆Ｓ字状パターン５３３を含む。逆Ｓ字状パターン５３３は、長さが１０μｍより短い複数の直線状延在部で構成されている。 The second magnetoresistance elements 530 a and 530 b have a double spiral pattern 530 as viewed from the direction orthogonal to the insulating layer 30. The double spiral pattern 530 has one spiral pattern 531 which is one of the two second unit patterns, the other spiral pattern 532 which is the other one of the two second unit patterns, And an inverted S-shaped pattern 533 connecting one spiral pattern 531 and the other spiral pattern 532 at the center of the double spiral pattern 530. The reverse S-shaped pattern 533 is composed of a plurality of linear extension portions whose length is shorter than 10 μm.
　２重渦巻き状パターン５３０は、パターン５２０と同じ太さで形成されている。従って、一方の渦巻き状パターン５３１および他方の渦巻き状パターン５３２の各々は、４つのＣ字状パターン５２１の各々と同じ太さである。ただし、２重渦巻き状パターン５３０の太さが、パターン５２０の太さより細くてもよい。 The double spiral pattern 530 is formed to have the same thickness as the pattern 520. Therefore, each of the one spiral pattern 531 and the other spiral pattern 532 has the same thickness as that of each of the four C-shaped patterns 521. However, the thickness of the double spiral pattern 530 may be thinner than the thickness of the pattern 520.
　図３６に示すように、２重渦巻き状パターン５３０は、仮想円Ｃ5の中心に関して略点対称の形状を有している。すなわち、２重渦巻き状パターン５３０は、仮想円Ｃ5の中心に関して略１８０°回転対称な形状を有している。 As shown in FIG. 36, the double spiral pattern 530 has a shape substantially point-symmetrical with respect to the center of the virtual circle C 5. That is, the double spiral pattern 530 has a substantially 180 ° rotationally symmetrical shape with respect to the center of the virtual circle C 5.
　図３４に示すように、第２磁気抵抗素子５３０ａと第２磁気抵抗素子５３０ｂとは、逆Ｓ字状パターン５３３の向きが互いに異なるように、２重渦巻き状パターン５３０の周方向の向きが異なっている。 As shown in FIG. 34, the second magnetoresistance element 530a and the second magnetoresistance element 530b have different circumferential directions of the double spiral pattern 530 such that the directions of the inverted S-shaped patterns 533 are different from each other. ing.
　本実施形態においては、第２磁気抵抗素子５３０ａと第２磁気抵抗素子５３０ｂとは、逆Ｓ字状パターン５３３の向きが互いに９０°異なるように、２重渦巻き状パターン５３０の周方向の向きが９０°異なっている。 In the present embodiment, the second magnetoresistive element 530 a and the second magnetoresistive element 530 b have a circumferential direction of the double spiral pattern 530 such that the directions of the inverted S-shaped patterns 533 differ from each other by 90 °. 90 ° different.
　本実施形態に係る磁気センサ５においては、第１磁気抵抗素子５２０ａ，５２０ｂがＣ字状パターン５２１を有している。Ｃ字状パターン５２１は、略正８角形を構成する８辺のうちの略７辺で構成されている。このように、第１磁気抵抗素子５２０ａ，５２０ｂは、多角形を構成する辺のうちの大部分の辺で構成されているため、磁界検出の異方性が低減されている。 In the magnetic sensor 5 according to the present embodiment, the first magnetoresistance elements 520 a and 520 b have a C-shaped pattern 521. The C-shaped pattern 521 is constituted by approximately seven sides out of eight sides constituting an approximately regular octagon. As described above, since the first magnetoresistance elements 520a and 520b are constituted by most of the sides constituting the polygon, the anisotropy of the magnetic field detection is reduced.
　さらに、本実施形態に係る磁気センサ５においては、第１磁気抵抗素子５２０ａおよび第１磁気抵抗素子５２０ｂのＣ字状パターン５２１の向きが互いに異なるように、パターン５２０の周方向の向きが異なっていることにより、磁界検出の等方性が高くなっている。 Furthermore, in the magnetic sensor 5 according to the present embodiment, the circumferential direction of the pattern 520 is different so that the directions of the C-shaped patterns 521 of the first magnetoresistance element 520a and the first magnetoresistance element 520b are different from each other. Because of this, the isotropy of magnetic field detection is high.
　本実施形態に係る磁気センサ５においては、第２磁気抵抗素子５３０ａ，５３０ｂが２重渦巻き状パターン５３０を有している。２重渦巻き状パターン５３０は、主に略正８角形を構成する辺が巻き回されて構成されている。 In the magnetic sensor 5 according to the present embodiment, the second magnetoresistance elements 530 a and 530 b have a double spiral pattern 530. The double spiral pattern 530 is mainly configured by winding the sides forming a substantially regular octagon.
　本実施形態に係る磁気センサ５においては、第２磁気抵抗素子５３０ａおよび第２磁気抵抗素子５３０ｂの逆Ｓ字状パターン５３３の向きが互いに異なるように、２重渦巻き状パターン５３０の周方向の向きが異なっていることにより、磁気抵抗効果の等方性が高くなっている。 In the magnetic sensor 5 according to the present embodiment, the circumferential direction of the double spiral pattern 530 is such that the directions of the reverse S-shaped patterns 533 of the second magnetoresistance element 530a and the second magnetoresistance element 530b are different from each other. Is different, the isotropy of the magnetoresistance effect is high.
　本実施形態に係る磁気センサ５においては、第１磁気抵抗素子５２０ａ，５２０ｂの内側に第２磁気抵抗素子５３０ａ，５３０ｂを配置しているため、磁気センサ５を小形にできる。また、磁気センサ５においても、第１磁気抵抗素子５２０ａ，５２０ｂと第２磁気抵抗素子５３０ａ，５３０ｂとを接続する配線を立体的に引き回す必要がないため、簡易な製造プロセスで回路基板５００を製造可能である。 In the magnetic sensor 5 according to the present embodiment, since the second magnetoresistance elements 530a and 530b are disposed inside the first magnetoresistance elements 520a and 520b, the magnetic sensor 5 can be miniaturized. Further, in the magnetic sensor 5 as well, it is not necessary to three-dimensionally extend the wiring connecting the first magnetoresistance elements 520a and 520b and the second magnetoresistance elements 530a and 530b, so the circuit board 500 is manufactured by a simple manufacturing process. It is possible.
　本実施形態に係る磁気センサ５においては、絶縁層３０上に２つの第１磁性体部材４５が配置されている。図３４に示すように、第１磁性体部材４５は、絶縁層３０に直交する方向から見て、正８角形の外形を有し、かつ、第１磁気抵抗素子５２０ａ，５２０ｂの外周縁より内側の領域に位置している。ここで、第１磁気抵抗素子５２０ａ，５２０ｂの外周縁より内側の領域とは、絶縁層３０に直交する方向から見て、第１磁気抵抗素子５２０ａ，５２０ｂの外周縁端を仮想直線で結んだ際に囲まれる領域である。この第１磁気抵抗素子５２０ａ，５２０ｂの外周縁より内側の領域と、第１磁性体部材４５の半分以上が重なっていることが好ましく、第１磁性体部材４５の２/３以上が重なっていることがより好ましい。 In the magnetic sensor 5 according to the present embodiment, two first magnetic members 45 are disposed on the insulating layer 30. As shown in FIG. 34, the first magnetic member 45 has a regular octagonal outer shape as viewed in the direction orthogonal to the insulating layer 30, and is inside the outer peripheral edge of the first magnetoresistance elements 520a and 520b. Located in the area of Here, the region inside the outer peripheral edge of the first magnetoresistance elements 520a and 520b is connected with the outer peripheral edge of the first magnetoresistance elements 520a and 520b by a virtual straight line when viewed from the direction orthogonal to the insulating layer 30. It is an area surrounded by It is preferable that a region inside the outer peripheral edge of the first magnetoresistance elements 520a and 520b and a half or more of the first magnetic member 45 overlap, and 2/3 or more of the first magnetic member 45 overlap Is more preferred.
　第１磁性体部材４５は、絶縁層３０に直交する方向から見て、第１磁気抵抗素子５２０ａ，５２０ｂの内周縁より内側の領域に位置している。第１磁性体部材４５は、絶縁層３０に直交する方向から見て、第１磁気抵抗素子５２０ａ，５２０ｂの内周縁上および内周縁より内側の領域を含む領域に位置していてもよい。ここで、第１磁気抵抗素子５２０ａ，５２０ｂの内周縁より内側の領域とは、絶縁層３０に直交する方向から見て、第１磁気抵抗素子５２０ａ，５２０ｂの内周縁端を仮想直線で結んだ際に囲まれる領域である。この第１磁気抵抗素子５２０ａ，５２０ｂの内周縁より内側の領域と、第１磁性体部材４５の半分以上が重なっていることが好ましく、第１磁性体部材４５の２/３以上が重なっていることがより好ましい。 The first magnetic member 45 is located in a region inside the inner peripheral edge of the first magnetoresistive elements 520 a and 520 b when viewed in the direction orthogonal to the insulating layer 30. The first magnetic member 45 may be located in a region including the region on the inner peripheral edge of the first magnetoresistive elements 520 a and 520 b and the region inside the inner peripheral edge as viewed from the direction orthogonal to the insulating layer 30. Here, the inner peripheral edge of the first magnetoresistance elements 520a and 520b is connected by a virtual straight line as viewed from the direction orthogonal to the insulating layer 30 with the region inside the inner peripheral edges of the first magnetoresistance elements 520a and 520b. It is an area surrounded by It is preferable that a region inside the inner peripheral edge of the first magnetoresistance elements 520a and 520b and a half or more of the first magnetic member 45 overlap, and 2/3 or more of the first magnetic member 45 overlap Is more preferred.
　本実施形態においては、第１磁性体部材４５は、絶縁層３０に直交する方向から見て、第１磁気抵抗素子５２０ａ，５２０ｂの外周縁と同心状に位置している。 In the present embodiment, the first magnetic member 45 is concentric with the outer peripheral edge of the first magnetoresistance elements 520 a and 520 b when viewed from the direction orthogonal to the insulating layer 30.
　本実施形態においては、第１磁性体部材４５は、絶縁層３０に直交する方向から見て、第１磁気抵抗素子５２０ａ，５２０ｂおよび第２磁気抵抗素子５３０ａ，５３０ｂのうちの第２磁気抵抗素子５３０ａ，５３０ｂのみを覆っている。よって、絶縁層３０に直交する方向から見て、第１磁性体部材４０の外周は、その全周の１／２以上が第１磁気抵抗素子１２０ａ，１２０ｂに取り囲まれている。 In the present embodiment, the first magnetic member 45 is a second magnetoresistive element of the first magnetoresistive elements 520 a and 520 b and the second magnetoresistive elements 530 a and 530 b when viewed from the direction orthogonal to the insulating layer 30. It covers only 530a and 530b. Therefore, when viewed from the direction orthogonal to the insulating layer 30, a half or more of the entire periphery of the first magnetic member 40 is surrounded by the first magnetoresistance elements 120a and 120b.
　本実施形態に係る磁気センサ５においても、垂直磁界および水平磁界を高感度に検出することができる。また、本発明の実施形態８に係る磁気センサ５は、第１磁気抵抗素子５２０ａ，５２０ｂが多角形状に配置された複数の第１単位パターンを含むことにより、水平磁界の検出の等方性が高い。 Also in the magnetic sensor 5 according to the present embodiment, the vertical magnetic field and the horizontal magnetic field can be detected with high sensitivity. In the magnetic sensor 5 according to Embodiment 8 of the present invention, the isotropy of detection of the horizontal magnetic field is obtained by including the plurality of first unit patterns in which the first magnetoresistance elements 520a and 520b are arranged in a polygonal shape. high.
　本実施形態においては、第１磁気抵抗素子５２０ａ，５２０ｂ、第２磁気抵抗素子５３０ａ，５３０ｂ、および、第１磁性体部材４５の各々が、同心状の正８角形に沿う形状を有しているが、これらの形状は、上記に限られず、同心状の多角形に沿う形状であればよい。この多角形の角の数を多くするほど、第１磁気抵抗素子５２０ａ，５２０ｂの水平磁界の検出の等方性が高くすることができる。 In the present embodiment, each of the first magnetoresistance elements 520a and 520b, the second magnetoresistance elements 530a and 530b, and the first magnetic member 45 has a shape along a concentric regular octagon. However, these shapes are not limited to the above, and may be shapes along concentric polygons. As the number of corners of this polygon is increased, the isotropy of detection of the horizontal magnetic field of the first magnetoresistance elements 520a and 520b can be made higher.
　なお、本実施形態においては、第２磁気抵抗素子５３０ａ，５３０ｂは、第１磁性体部材４５により磁気シールドされて、垂直磁界および水平磁界をほとんど検出しないため、必ずしも第２磁気抵抗素子５３０ａ，５３０ｂの抵抗変化率が、第１磁気抵抗素子５２０ａ，５２０ｂの抵抗変化率より小さくなくてもよい。 In the present embodiment, since the second magnetoresistive elements 530a and 530b are magnetically shielded by the first magnetic member 45 and hardly detect the vertical magnetic field and the horizontal magnetic field, the second magnetoresistive elements 530a and 530b are not necessarily detected. The rate of change in resistance may not be smaller than the rate of change in resistance of the first magnetoresistance elements 520a and 520b.
　本発明の実施形態８に係る磁気センサ５においても、磁気抵抗素子を用いて、水平磁界の検出の等方性が高く、微弱な垂直磁界も検出することができるとともに、磁気抵抗素子の上方に設けられた構造体から磁気抵抗素子に作用する応力によって出力精度が低下することを抑制できる。 Also in the magnetic sensor 5 according to the eighth embodiment of the present invention, the isotropy of detection of a horizontal magnetic field is high using a magnetoresistance element, and a weak vertical magnetic field can also be detected, and above the magnetoresistance element. It is possible to suppress the decrease in output accuracy due to the stress acting on the magnetoresistive element from the provided structure.
　上述した実施形態の説明において、組み合わせ可能な構成を相互に組み合わせてもよい。 In the description of the above-described embodiments, the combinations of combinations may be combined with each other.
　今回開示された実施形態はすべての点で例示であって制限的なものではないと考えられるべきである。本発明の範囲は上記した説明ではなくて請求の範囲によって示され、請求の範囲と均等の意味および範囲内でのすべての変更が含まれることが意図される。 It should be understood that the embodiments disclosed herein are illustrative and non-restrictive in every respect. The scope of the present invention is shown not by the above description but by the scope of claims, and is intended to include all modifications within the scope and meaning equivalent to the scope of claims.
　１，１ａ，１ｂ，１ｃ，２，３，４，５　磁気センサ、１０　磁性体層、２０　導電層、３０　絶縁層、４０，４０ａ，４０ｂ，４５　第１磁性体部材、４０ｂｍ，６０ｂｍ　貫通溝、４０ｈ，５０ｈ，６０ｈ，７０ｈ　貫通孔、５０　第２磁性体部材、６０，６０ａ，６０ｂ　第１導電体部、６０ａｈ，６０ｃｈ　貫通孔、６０ｂｍ，６０ｍ，７０ｂｍ　貫通溝、７０，７０ｂ　第２導電体部、１００，２００，３００，４００，５００　回路基板、１１０　半導体基板、１２０，２３０，３３０，５２０　パターン、１２０ａ，１２０ｂ，３２０ａ，３２０ｂ，４２０ａ，４２０ｂ，５２０ａ，５２０ｂ　第１磁気抵抗素子、１２１，１３３，３２３，５２１，５３３　Ｃ字状パターン、１２２，１２３，２３１，２３２，２３３　半円弧状パターン、１３０，３２０，５３０　２重渦巻き状パターン、１３０ａ，１３０ｂ，２３０ａ，２３０ｂ，３３０ａ，３３０ｂ，４３０ａ，４３０ｂ，５３０ａ，５３０ｂ　第２磁気抵抗素子、１３１，１３２，３２１，３２２，５３１，５３２　渦巻き状パターン、１４０，１４１　中点、１４５，１４６，１４７，１４８，１４９，１５０，１５１，１５２　配線、１６０　差動増幅器、１６１　温度補償回路、１６２　スイッチ回路、１６３　ドライバ、２３４，Ｌ1～Ｌ15　直線状延在部、３２４，３２５　長さ調整用冗長部、３７０　第２単位パターン、３７０ａ　始端部、３７０ｂ　終端部、５２２，５２３　直線状パターン、Ｂ1～Ｂ14　曲部、Ｃ1，Ｃ2，Ｃ3，Ｃ5　仮想円、Ｃ11，Ｃ21，Ｃ51　Ｃ字形状。 1, 1a, 1b, 1c, 2, 3, 4, 5 magnetic sensors, 10 magnetic layers, 20 conductive layers, 30 insulating layers, 40, 40a, 40b, 45 first magnetic members, 40bm, 60b through grooves, 40h, 50h, 60h, 70h through hole, 50 second magnetic member, 60, 60a, 60b first conductor portion, 60ah, 60ch through hole, 60bm, 60m, 70bm through groove, 70, 70b second conductor portion 100, 200, 300, 400, 500 circuit board, 110 semiconductor substrate, 120, 230, 330, 520 pattern, 120a, 120b, 320a, 320b, 420a, 420b, 520a, 520b first magnetoresistance element, 121, 133 , 323, 521, 533 C-shaped pattern, 122, 123, 231, 232, 233 semi-circular pattern, 130, 3 0, 530 double spiral pattern, 130a, 130b, 230a, 230b, 330a, 330b, 430a, 430b, 530a, 530b second magnetoresistive element, 131, 132, 321, 322, 531, 532 spiral pattern, 140 , 141 middle point, 145, 146, 147, 148, 149, 150, 151, 152 wiring, 160 differential amplifier, 161 temperature compensation circuit, 162 switch circuit, 163 driver, 234, L 1 to L 15 linear extension Part, 324, 325 Length adjustment redundant part, 370 second unit pattern, 370a start end, 370b end end, 522, 523 linear pattern, B 1 to B 14 curved part, C 1 , C 2 , C 3 , C 5 virtual circle, C 11, C 21, C 51 C -shape.

Claims (25)

  1. 　第１磁気抵抗素子と、
    　前記第１磁気抵抗素子と電気的に接続されてブリッジ回路を構成する第２磁気抵抗素子と、
    　前記第１磁気抵抗素子および前記第２磁気抵抗素子を覆う絶縁層と、
    　前記絶縁層上に位置する、第１導電体部および該第１導電体部とは異なる第２導電体部のうちの、少なくとも前記第１導電体部と、
    　前記第１導電体部上に位置し、前記絶縁層に直交する方向から見て、前記第１導電体部を覆う第１磁性体部材、および、前記第２導電体部上に位置し、前記絶縁層に直交する方向から見て、前記第２導電体部を覆う、前記第１磁性体部材とは異なる第２磁性体部材のうちの、少なくとも前記第１磁性体部材とを備え、
    　前記第１磁気抵抗素子は、外周縁および内周縁のうちの少なくとも前記外周縁を有し、
    　前記第１磁性体部材は、前記絶縁層に直交する方向から見て、前記第１磁気抵抗素子の前記外周縁より内側の領域に位置しており、
    　前記第２磁気抵抗素子は、前記絶縁層に直交する方向から見て、前記第１磁気抵抗素子の前記内周縁より内側の領域に位置して前記第１磁性体部材で覆われている、または、前記第１磁気抵抗素子の前記外周縁より外側の領域に位置して前記第２磁性体部材で覆われており、
    　前記第１導電体部には、前記絶縁層に直交する方向に貫通した、貫通溝または貫通孔が設けられており、
    　前記第１磁性体部材は、前記絶縁層に直交する方向から見て、前記貫通溝または前記貫通孔に沿って位置している、磁気センサ。     A first magnetoresistance element,
    A second magnetoresistance element electrically connected to the first magnetoresistance element to form a bridge circuit;
    An insulating layer covering the first magnetoresistive element and the second magnetoresistive element;
    At least the first conductor portion of a first conductor portion and a second conductor portion different from the first conductor portion, the first conductor portion being located on the insulating layer;
    A first magnetic material member covering the first conductor portion, which is located on the first conductor portion and viewed from a direction perpendicular to the insulating layer, and is located on the second conductor portion, And at least the first magnetic member among the second magnetic members different from the first magnetic member covering the second conductive portion when viewed in the direction orthogonal to the insulating layer;
    The first magnetoresistive element has at least the outer peripheral edge of the outer peripheral edge and the inner peripheral edge,
    The first magnetic member is located in an area inside the outer peripheral edge of the first magnetoresistive element, as viewed in a direction orthogonal to the insulating layer,
    The second magnetic resistance element is located in a region inside the inner peripheral edge of the first magnetic resistance element and is covered with the first magnetic member, as viewed in the direction orthogonal to the insulating layer, or The second magnetic member is located in a region outside the outer peripheral edge of the first magnetoresistive element;
    The first conductor portion is provided with a through groove or a through hole penetrating in a direction orthogonal to the insulating layer,
    The magnetic sensor, wherein the first magnetic member is located along the through groove or the through hole when viewed in a direction perpendicular to the insulating layer.
  2. 　前記絶縁層に直交する方向から見て、前記貫通孔は、前記第１導電体部の中央に設けられている、請求項１に記載の磁気センサ。 The magnetic sensor according to claim 1, wherein the through hole is provided at a center of the first conductor portion when viewed in a direction orthogonal to the insulating layer.
  3. 　前記絶縁層に直交する方向から見て、前記貫通孔は、円形状に設けられている、請求項２に記載の磁気センサ。 The magnetic sensor according to claim 2, wherein the through holes are provided in a circular shape when viewed in a direction orthogonal to the insulating layer.
  4. 　前記絶縁層に直交する方向から見て、前記貫通溝は、前記第１導電体部の中心を通過している、請求項１に記載の磁気センサ。 2. The magnetic sensor according to claim 1, wherein the through groove passes through the center of the first conductor portion when viewed in a direction orthogonal to the insulating layer.
  5. 　前記絶縁層に直交する方向から見て、前記貫通溝は、直線状に延在している、請求項４に記載の磁気センサ。 The magnetic sensor according to claim 4, wherein the through groove extends linearly when viewed in a direction orthogonal to the insulating layer.
  6. 　前記第１導電体部に、前記絶縁層に直交する方向に貫通した、他の貫通溝がさらに設けられており、
    　前記他の貫通溝は、前記絶縁層に直交する方向から見て、前記貫通溝と前記第１導電体部の中心で交差している、請求項４または請求項５に記載の磁気センサ。     The first conductor portion is further provided with another through groove penetrating in a direction orthogonal to the insulating layer,
    The magnetic sensor according to claim 4 or 5, wherein the other through groove intersects the center of the first groove with the through hole when viewed in a direction perpendicular to the insulating layer.
  7. 　前記絶縁層に直交する方向から見て、前記他の貫通溝は、直線状に延在している、請求項６に記載の磁気センサ。 The magnetic sensor according to claim 6, wherein the other through groove extends linearly when viewed in a direction orthogonal to the insulating layer.
  8. 　第１磁気抵抗素子と、
    　前記第１磁気抵抗素子と電気的に接続されてブリッジ回路を構成する第２磁気抵抗素子と、
    　前記第１磁気抵抗素子および前記第２磁気抵抗素子を覆う絶縁層と、
    　前記絶縁層上に位置する、第１磁性体部材および該第１磁性体部材とは異なる第２磁性体部材のうちの少なくとも前記第１磁性体部材とを備え、
    　前記第１磁気抵抗素子は、外周縁および内周縁のうちの少なくとも前記外周縁を有し、
    　前記第１磁性体部材は、前記絶縁層に直交する方向から見て、前記第１磁気抵抗素子の前記外周縁より内側の領域に位置しており、
    　前記第２磁気抵抗素子は、前記絶縁層に直交する方向から見て、前記第１磁気抵抗素子の前記内周縁より内側の領域に位置して前記第１磁性体部材で覆われている、または、前記第１磁気抵抗素子の前記外周縁より外側の領域に位置して前記第２磁性体部材で覆われており、
    　前記第１磁性体部材には、前記絶縁層に直交する方向に貫通した、貫通溝または貫通孔が設けられている、磁気センサ。     A first magnetoresistance element,
    A second magnetoresistance element electrically connected to the first magnetoresistance element to form a bridge circuit;
    An insulating layer covering the first magnetoresistive element and the second magnetoresistive element;
    And at least the first magnetic member among the first magnetic member and the second magnetic member different from the first magnetic member located on the insulating layer,
    The first magnetoresistive element has at least the outer peripheral edge of the outer peripheral edge and the inner peripheral edge,
    The first magnetic member is located in an area inside the outer peripheral edge of the first magnetoresistive element, as viewed in a direction orthogonal to the insulating layer,
    The second magnetic resistance element is located in a region inside the inner peripheral edge of the first magnetic resistance element and is covered with the first magnetic member, as viewed in the direction orthogonal to the insulating layer, or The second magnetic member is located in a region outside the outer peripheral edge of the first magnetoresistive element;
    The magnetic sensor according to claim 1, wherein the first magnetic member has a through groove or a through hole penetrating in a direction perpendicular to the insulating layer.
  9. 　前記絶縁層に直交する方向から見て、前記貫通孔は、前記第１磁性体部材の中央に設けられている、請求項８に記載の磁気センサ。 The magnetic sensor according to claim 8, wherein the through hole is provided at the center of the first magnetic member as viewed in a direction orthogonal to the insulating layer.
  10. 　前記絶縁層に直交する方向から見て、前記貫通孔は、円形状に設けられている、請求項９に記載の磁気センサ。 The magnetic sensor according to claim 9, wherein the through holes are provided in a circular shape when viewed in a direction orthogonal to the insulating layer.
  11. 　前記絶縁層に直交する方向から見て、前記貫通溝は、前記第１磁性体部材の中心を通過している、請求項８に記載の磁気センサ。 The magnetic sensor according to claim 8, wherein the through groove passes through the center of the first magnetic member as viewed in a direction orthogonal to the insulating layer.
  12. 　前記絶縁層に直交する方向から見て、前記貫通溝は、直線状に延在している、請求項１１に記載の磁気センサ。 The magnetic sensor according to claim 11, wherein the through groove extends in a straight line when viewed in a direction orthogonal to the insulating layer.
  13. 　前記第１磁性体部材に、前記絶縁層に直交する方向に貫通した、他の貫通溝がさらに設けられており、
    　前記他の貫通溝は、前記絶縁層に直交する方向から見て、前記貫通溝と前記第１磁性体部材の中心で交差している、請求項１１または請求項１２に記載の磁気センサ。     The first magnetic member further includes another through groove penetrating in a direction orthogonal to the insulating layer,
    The magnetic sensor according to claim 11, wherein the other through groove intersects the center of the first magnetic member with the through groove when viewed in a direction orthogonal to the insulating layer.
  14. 　前記絶縁層に直交する方向から見て、前記他の貫通溝は、直線状に延在している、請求項１３に記載の磁気センサ。 The magnetic sensor according to claim 13, wherein the other through grooves extend in a straight line when viewed in a direction orthogonal to the insulating layer.
  15. 　前記第１磁性体部材の厚さをｘμｍとすると、
    　前記第１磁気抵抗素子の少なくとも一部は、前記絶縁層に直交する方向から見て、前記第１磁性体部材の前記外周縁から内側に２μｍ離れた位置から、前記第１磁性体部材の前記外周縁から外側に下記式(Ｉ)で示すｙμｍ離れた位置までの、領域の少なくとも一部に位置している、請求項１から請求項１４のいずれか１項に記載の磁気センサ。
    　ｙ＝－０．０００８ｘ２＋０．２４９５ｘ＋６．６５０６　(Ｉ)     Assuming that the thickness of the first magnetic member is x μm,
    At least a part of the first magnetoresistive element is the second magnetic member from a position spaced 2 μm inward from the outer peripheral edge of the first magnetic member when viewed in the direction orthogonal to the insulating layer. The magnetic sensor according to any one of claims 1 to 14, wherein the magnetic sensor is located at least a part of the region from the outer peripheral edge to a position separated by y μm indicated by the following formula (I) to the outside.
    y = -0.0008x 2 + 0.2495x + 6.6506 (I)
  16. 　前記第１磁性体部材は、前記絶縁層に直交する方向から見て、前記第１磁気抵抗素子の前記外周縁と同心状に位置している、請求項１から請求項１５のいずれか１項に記載の磁気センサ。 The first magnetic member according to any one of claims 1 to 15, wherein the first magnetic member is concentric with the outer peripheral edge of the first magnetoresistive element as viewed in the direction orthogonal to the insulating layer. Magnetic sensor described in.
  17. 　前記第２磁気抵抗素子は、前記絶縁層に直交する方向から見て、前記第１磁気抵抗素子の前記内周縁より内側の領域に位置して前記第１磁性体部材で覆われており、
    　前記第１磁性体部材は、前記絶縁層に直交する方向から見て、前記第１磁気抵抗素子の前記内周縁上および前記内周縁より内側の領域を含む領域に位置している、請求項１から請求項１６のいずれか１項に記載の磁気センサ。     The second magnetoresistive element is located in a region inside the inner peripheral edge of the first magnetoresistive element as viewed in the direction orthogonal to the insulating layer, and is covered with the first magnetic member.
    The first magnetic member is located in a region including the region on the inner peripheral edge of the first magnetoresistive element and the region inside the inner peripheral edge as viewed in the direction orthogonal to the insulating layer. 17. A magnetic sensor according to any one of the preceding claims.
  18. 　前記第２磁気抵抗素子は、前記絶縁層に直交する方向から見て、前記第１磁気抵抗素子の前記内周縁より内側の領域に位置して前記第１磁性体部材で覆われており、
    　前記第１磁性体部材は、前記絶縁層に直交する方向から見て、前記第１磁気抵抗素子および前記第２磁気抵抗素子のうちの前記第２磁気抵抗素子のみを覆っている、請求項１から請求項１６のいずれか１項に記載の磁気センサ。     The second magnetoresistive element is located in a region inside the inner peripheral edge of the first magnetoresistive element as viewed in the direction orthogonal to the insulating layer, and is covered with the first magnetic member.
    The first magnetic member covers only the second magnetoresistive element of the first magnetoresistive element and the second magnetoresistive element, as viewed in a direction perpendicular to the insulating layer. 17. A magnetic sensor according to any one of the preceding claims.
  19. 　前記第２磁気抵抗素子は、前記絶縁層に直交する方向から見て、前記第１磁性体部材の中心から、前記第１磁性体部材の前記外周縁から内側に７μｍ離れた位置までの、領域に位置している、請求項１８に記載の磁気センサ。 The second magnetoresistive element is a region from the center of the first magnetic member to a position 7 μm inward from the outer peripheral edge of the first magnetic member as viewed in the direction orthogonal to the insulating layer. The magnetic sensor according to claim 18, wherein the magnetic sensor is located at
  20. 　前記第２磁気抵抗素子は、前記絶縁層に直交する方向から見て、前記第１磁気抵抗素子の前記外周縁より外側の領域に位置して前記第２磁性体部材で覆われており、
    　前記第１磁性体部材は、前記絶縁層に直交する方向から見て、前記第１磁気抵抗素子および前記第２磁気抵抗素子のうちの前記第１磁気抵抗素子の一部のみを覆っている、請求項１から請求項１６のいずれか１項に記載の磁気センサ。     The second magnetoresistive element is located in a region outside the outer peripheral edge of the first magnetoresistive element when viewed in the direction orthogonal to the insulating layer, and is covered with the second magnetic member.
    The first magnetic member covers only a part of the first magnetoresistive element of the first magnetoresistive element and the second magnetoresistive element, as viewed in a direction perpendicular to the insulating layer. The magnetic sensor according to any one of claims 1 to 16.
  21. 　前記第２磁性体部材は、前記絶縁層に直交する方向から見て、前記第１磁気抵抗素子および前記第２磁気抵抗素子のうちの前記第２磁気抵抗素子のみを覆っている、請求項２０に記載の磁気センサ。 21. The magnetic recording medium according to claim 20, wherein the second magnetic member covers only the second magnetic resistance element of the first magnetic resistance element and the second magnetic resistance element, as viewed in a direction perpendicular to the insulating layer. Magnetic sensor described in.
  22. 　前記第２磁気抵抗素子は、前記絶縁層に直交する方向から見て、前記第２磁性体部材の中心から、前記第２磁性体部材の前記外周縁から内側に７μｍ離れた位置までの、領域に位置している、請求項２１に記載の磁気センサ。 The second magnetoresistive element is a region from the center of the second magnetic member to a position 7 μm inward from the outer peripheral edge of the second magnetic member as viewed in the direction orthogonal to the insulating layer. 22. A magnetic sensor according to claim 21, wherein the magnetic sensor is located at.
  23. 　前記第１磁気抵抗素子は、前記絶縁層に直交する方向から見て、同心状に配置されて互いに接続された複数の第１単位パターンを含む、請求項１から請求項２２のいずれか１項に記載の磁気センサ。 The first magnetoresistive element according to any one of claims 1 to 22, wherein the first magnetoresistive element includes a plurality of first unit patterns concentrically arranged and connected to each other when viewed in a direction orthogonal to the insulating layer. Magnetic sensor described in.
  24. 　感磁素子と、
    　前記感磁素子を覆う絶縁層と、
    　前記絶縁層上に位置する第１導電体部と、
    　前記第１導電体部上に位置し、前記絶縁層に直交する方向から見て、前記第１導電体部を覆う第１磁性体部材とを備え、
    　前記第１導電体部には、前記絶縁層に直交する方向に貫通した、貫通溝または貫通孔が設けられており、
    　前記第１磁性体部材は、前記絶縁層に直交する方向から見て、前記貫通溝または前記貫通孔に沿って位置している、磁気センサ。     A magnetosensitive element,
    An insulating layer covering the magnetosensitive element;
    A first conductor portion located on the insulating layer;
    A first magnetic member positioned on the first conductor portion and covering the first conductor portion when viewed from a direction perpendicular to the insulating layer;
    The first conductor portion is provided with a through groove or a through hole penetrating in a direction orthogonal to the insulating layer,
    The magnetic sensor, wherein the first magnetic member is located along the through groove or the through hole when viewed in a direction perpendicular to the insulating layer.
  25. 　前記感磁素子は、外周縁を有し、
    　前記第１磁性体部材は、前記絶縁層に直交する方向から見て、前記感磁素子の前記外周縁より内側の領域に位置している、請求項２４に記載の磁気センサ。     The magnetosensitive element has an outer peripheral edge,
    25. The magnetic sensor according to claim 24, wherein the first magnetic member is located in an area inside the outer peripheral edge of the magnetic sensing element as viewed in the direction orthogonal to the insulating layer.
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