JP2003142752A - Manufacturing method of magnetic sensor - Google Patents
Manufacturing method of magnetic sensorInfo
- Publication number
- JP2003142752A JP2003142752A JP2001336681A JP2001336681A JP2003142752A JP 2003142752 A JP2003142752 A JP 2003142752A JP 2001336681 A JP2001336681 A JP 2001336681A JP 2001336681 A JP2001336681 A JP 2001336681A JP 2003142752 A JP2003142752 A JP 2003142752A
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- JP
- Japan
- Prior art keywords
- magnetic flux
- magnetic
- manufacturing
- hall element
- magnetic sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、磁気センサの製造
方法に関する。TECHNICAL FIELD The present invention relates to a method for manufacturing a magnetic sensor.
【０００２】さらに詳述すると、本発明は、磁束を収束
する磁気収束板を備え、その磁気収束板の端部より漏れ
る磁束を半導体ホール素子により検出する磁気センサの
製造方法に関する。More specifically, the present invention relates to a method of manufacturing a magnetic sensor having a magnetic flux concentrating plate for converging magnetic flux and detecting a magnetic flux leaking from the end of the magnetic flux concentrating plate by a semiconductor Hall element.
【０００３】[0003]
【従来の技術】従来より、磁束を収束する磁気収束板を
備え、前記磁気収束板の端部より漏れる磁束をホール素
子により検出する磁気センサがある。このような磁気セ
ンサとしては電流導体を流れる電流により生じる磁束を
磁気センサにより検知し電流値を測定する電流センサと
して米国特許第５，９４２，８９５号に記載のものが知
られている。2. Description of the Related Art Conventionally, there is a magnetic sensor having a magnetic flux converging plate for converging magnetic flux and detecting a magnetic flux leaking from an end of the magnetic flux concentrating plate by a Hall element. As such a magnetic sensor, a magnetic sensor disclosed in US Pat. No. 5,942,895 is known as a current sensor that detects a magnetic flux generated by a current flowing through a current conductor and measures the current value.
【０００４】この電流センサは、図８に示すように、測
定用の電流を流すことによりその周囲に磁束を発生させ
る測定用導体１と、この測定用導体１の下方に配置さ
れ、その磁束を検出する磁気センサ２とを備えている。
この磁気センサ２は、その上面側に、測定用導体１の発
生する磁束を検出するホール素子３，４が配置されてい
る。また、磁気センサ２の上には、測定用導体１によっ
て発生する磁束を水平方向に収束させるとともに、その
磁束をホール素子３，４に導く磁気収束板５，６が設け
られ、これらは所定の空隙（ギャップ）７を設けて配置
されている。As shown in FIG. 8, this current sensor is arranged below the measuring conductor 1 and a measuring conductor 1 for generating a magnetic flux around the measuring current by flowing a measuring current. And a magnetic sensor 2 for detecting.
The magnetic sensor 2 has Hall elements 3 and 4 arranged on the upper surface thereof for detecting the magnetic flux generated by the measuring conductor 1. Further, on the magnetic sensor 2, magnetic flux concentrator plates 5 and 6 for converging the magnetic flux generated by the measuring conductor 1 in the horizontal direction and guiding the magnetic flux to the Hall elements 3 and 4 are provided. A gap 7 is provided and arranged.
【０００５】磁気センサ２は、リードフレーム８に固定
された状態でパッケージ９内に収容されている。また、
磁気収束板５，６は適宜手段でパッケージ９内に固定さ
れている。さらに、パッケージ９には、外部と電気的に
接続する端子１０が固定されている。そして、測定用導
体１の外周のうち、磁気収束板５，６が配置される部分
を除く他の部分には、発生する磁束を収束する磁気収束
部材１１が設けられている。The magnetic sensor 2 is housed in a package 9 while being fixed to the lead frame 8. Also,
The magnetic flux concentrator plates 5 and 6 are fixed in the package 9 by appropriate means. Further, a terminal 10 that is electrically connected to the outside is fixed to the package 9. A magnetic flux concentrating member 11 that converges the generated magnetic flux is provided on the outer periphery of the measurement conductor 1 except for the portions where the magnetic flux concentrator plates 5 and 6 are arranged.
【０００６】[0006]
【発明が解決しようとする課題】上述した従来の磁気セ
ンサにおいて、外部から要求される情報を適切な電気信
号の形態で出力するには磁電変換素子，磁気収束板、お
よび信号処理回路は必須の構成要素である。一方、磁気
センサを電子機器内に内蔵するためには、小型でかつ低
コストで製造できる磁気センサの出現が望まれている。In the above-described conventional magnetic sensor, the magnetoelectric conversion element, the magnetic converging plate, and the signal processing circuit are indispensable for outputting information requested from the outside in the form of an appropriate electric signal. It is a component. On the other hand, in order to embed a magnetic sensor in an electronic device, the appearance of a magnetic sensor that is small and can be manufactured at low cost is desired.
【０００７】また、従来よりＬＳＩの製造工程に代表さ
れるように、シリコンウエーハ上に薄膜形成および加工
を繰り返し、同時に多数のＬＳＩチップが製造されてい
る。そこで、磁電変換素子，磁気収束板、および信号処
理回路を有する磁気センサを小型かつ低コストで製造す
るためには、ＬＳＩの製造工程に準拠した製造方法が望
まれる。Further, as typified by an LSI manufacturing process, thin film formation and processing are repeated on a silicon wafer, and a large number of LSI chips are manufactured at the same time. Therefore, in order to manufacture a magnetic sensor having a magnetoelectric conversion element, a magnetic flux concentrator, and a signal processing circuit in a small size and at low cost, a manufacturing method based on the LSI manufacturing process is desired.
【０００８】よって本発明の目的は、上述の点に鑑み、
小型でかつ低コストな磁気センサの製造方法を提供する
ことにある。Therefore, in view of the above points, an object of the present invention is to
An object of the present invention is to provide a small-sized and low-cost method of manufacturing a magnetic sensor.
【０００９】[0009]
【課題を解決するための手段】上記の目的を達成するた
めに、請求項１に係る本発明は、磁束を収束する磁気収
束板を備え、前記磁気収束板の端部より漏れる磁束を半
導体ホール素子により検出する磁気センサの製造方法で
あって、前記半導体ホール素子を形成した後、電解鍍金
により軟磁性薄膜を堆積して前記磁気収束板を形成する
ものである。In order to achieve the above-mentioned object, the present invention according to claim 1 is provided with a magnetic flux concentrating plate for concentrating magnetic flux, and the magnetic flux leaking from the end of the magnetic concentrating plate is a semiconductor hole. A method of manufacturing a magnetic sensor for detecting by a device, which comprises forming the semiconductor Hall device and then depositing a soft magnetic thin film by electrolytic plating to form the magnetic flux concentrator plate.
【００１０】請求項２に係る本発明は、磁束を収束する
磁気収束板を備え、前記磁気収束板の端部より漏れる磁
束を半導体ホール素子により検出する磁気センサの製造
方法であって、前記半導体ホール素子を形成した後、ス
パッタリングにより軟磁性薄膜を堆積して前記磁気収束
板を形成するものである。The present invention according to claim 2 is a method of manufacturing a magnetic sensor, comprising a magnetic flux converging plate for converging magnetic flux, and detecting a magnetic flux leaking from an end of the magnetic flux concentrating plate by a semiconductor Hall element. After forming the Hall element, a soft magnetic thin film is deposited by sputtering to form the magnetic flux concentrator.
【００１１】請求項３に係る本発明は、磁束を収束する
磁気収束板を備え、前記磁気収束板の端部より漏れる磁
束を半導体ホール素子により検出する磁気センサの製造
方法であって、前記半導体ホール素子の感受面上に窪み
を形成し、軟磁性薄膜を堆積して前記磁気収束板を形成
するものである。The present invention according to claim 3 is a method of manufacturing a magnetic sensor, comprising a magnetic flux converging plate for converging magnetic flux, and detecting magnetic flux leaking from an end of the magnetic flux concentrating plate by a semiconductor Hall element. A recess is formed on the sensitive surface of the Hall element, and a soft magnetic thin film is deposited to form the magnetic flux concentrator.
【００１２】請求項４に係る本発明は、磁束を収束する
磁気収束板を備え、前記磁気収束板の端部より漏れる磁
束を半導体ホール素子により検出する磁気センサの製造
方法であって、前記半導体ホール素子の感受面上に窪み
を形成し、軟磁性薄膜を堆積して前記磁気収束板を形成
する際に、前記半導体ホール素子を形成した半導体基板
上に信号処理回路を同時に形成するものである。According to a fourth aspect of the present invention, there is provided a method for manufacturing a magnetic sensor, comprising a magnetic flux converging plate for converging magnetic flux, and detecting a magnetic flux leaking from an end of the magnetic flux concentrating plate by a semiconductor Hall element. A signal processing circuit is simultaneously formed on a semiconductor substrate on which the semiconductor Hall element is formed when a recess is formed on the sensitive surface of the Hall element and a soft magnetic thin film is deposited to form the magnetic flux concentrator. .
【００１３】請求項５に係る本発明は、電解鍍金により
軟磁性薄膜を堆積し磁束を収束する磁気収束板を形成し
た磁気センサの製造方法であって、半導体ホール素子お
よび信号処理回路を形成した半導体基板に電気的に接続
されたシード層を設けるものである。The present invention according to claim 5 is a method of manufacturing a magnetic sensor in which a soft magnetic thin film is deposited by electrolytic plating to form a magnetic flux concentrating plate that converges magnetic flux, and a semiconductor Hall element and a signal processing circuit are formed. A seed layer electrically connected to the semiconductor substrate is provided.
【００１４】請求項６に係る本発明は、電解鍍金により
軟磁性薄膜を堆積し磁束を収束する磁気収束板を形成し
た磁気センサの製造方法であって、半導体ホール素子お
よび信号処理回路を形成した半導体基板に電気的に接続
されたシード層を設けるにあたり、前記半導体基板とし
てＰ型シリコン基板を用い、該Ｐ型シリコン基板上に前
記半導体ホール素子を形成する際に、ホールプレートが
ｎ型拡散層であり、該ｎ型拡散層の上に前記Ｐ型シリコ
ン基板と電気的に接続されたＰ型拡散層を備え、さらに
該Ｐ型拡散層の上に前記シード層を設けるものである。The present invention according to claim 6 is a method of manufacturing a magnetic sensor in which a soft magnetic thin film is deposited by electrolytic plating to form a magnetic converging plate for converging magnetic flux, and a semiconductor Hall element and a signal processing circuit are formed. In providing the seed layer electrically connected to the semiconductor substrate, a P-type silicon substrate is used as the semiconductor substrate, and when forming the semiconductor Hall element on the P-type silicon substrate, the hole plate is an n-type diffusion layer. A P-type diffusion layer electrically connected to the P-type silicon substrate is provided on the n-type diffusion layer, and the seed layer is further provided on the P-type diffusion layer.
【００１５】請求項７に係る本発明は、請求項１〜６の
いずれかに係る磁気センサの製造方法おいて、前記磁気
収束板は、鉄，コバルト，ニッケルの内、少なくとも２
つを含む。The present invention according to claim 7 is the method for manufacturing a magnetic sensor according to any one of claims 1 to 6, wherein the magnetic flux concentrator is at least 2 of iron, cobalt and nickel.
Including one.
【００１６】[0016]
【発明の実施の形態】以下、図面を参照して本発明の実
施形態を詳細に説明する。DETAILED DESCRIPTION OF THE INVENTION Embodiments of the present invention will be described in detail below with reference to the drawings.
【００１７】（第１の実施形態）図１を用いて、本発明
の第１の実施形態における磁気センサの製造プロセスフ
ローを説明する。(First Embodiment) A manufacturing process flow of a magnetic sensor according to a first embodiment of the present invention will be described with reference to FIG.
【００１８】図１において、基板５１はシリコン基板で
あり、ＬＳＩ製造プロセスとして周知の技術により、信
号処理回路を形成する。この時、同時にホール素子部５
４，５５が形成される。最上層は窒化シリコンあるいは
酸化シリコンからなる絶縁物で形成される。この時の断
面図が図１の（Ａ）である。なお、この図では信号処理
回路等は省略してある。In FIG. 1, a substrate 51 is a silicon substrate, and a signal processing circuit is formed by a technique known as an LSI manufacturing process. At this time, at the same time, the Hall element part 5
4, 55 are formed. The uppermost layer is formed of an insulator made of silicon nitride or silicon oxide. A sectional view at this time is shown in FIG. Note that the signal processing circuit and the like are omitted in this figure.
【００１９】次に、スパッタリングによりＴｉ薄膜を５
０ｎｍ堆積させた後、Ｎｉ−Ｆｅ合金薄膜５７を７０ｎ
ｍ堆積する。Ｔｉ薄膜は下地絶縁層とＮｉ−Ｆｅ合金薄
膜５７の密着性を上げるためのものである。次に、厚さ
３０μｍのドライフィルムレジストにより磁気収束板に
相当するパターン５８を開口した状態で形成する。この
時の断面図が図１の（Ｂ）である。Next, a Ti thin film is sputtered by sputtering.
After depositing 0 nm, the Ni-Fe alloy thin film 57 is
m. The Ti thin film is for improving the adhesion between the base insulating layer and the Ni—Fe alloy thin film 57. Next, a pattern 58 corresponding to a magnetic flux concentrator is formed in an open state with a dry film resist having a thickness of 30 μm. A sectional view at this time is shown in FIG.
【００２０】次に、電解鍍金によりＮｉ−Ｆｅ合金薄膜
を１５μｍ堆積する。この時の断面図が図１の（Ｃ）で
ある。図３は、この時の鍍金槽の模式図を示す。Ｎｉ−
Ｆｅ合金薄膜５７は電解鍍金のシード層であり、基板の
周辺部で陰電極８２と接している。シリコン基板５１は
表側のみ鍍金液に曝されており、その他の部分は基板ホ
ルダー８１で覆われている。鍍金液には硫酸ニッケル，
塩化ニッケル，硫酸鉄，ラウリル硫酸ナトリウム，ホウ
酸，サッカリンの混合液を用いる。Next, a Ni--Fe alloy thin film is deposited to a thickness of 15 μm by electrolytic plating. A cross-sectional view at this time is shown in FIG. FIG. 3 shows a schematic view of the plating tank at this time. Ni-
The Fe alloy thin film 57 is a seed layer of electrolytic plating and is in contact with the negative electrode 82 in the peripheral portion of the substrate. The silicon substrate 51 is exposed to the plating solution only on the front side, and the other portions are covered with the substrate holder 81. Nickel sulfate is used as the plating liquid,
Use a mixture of nickel chloride, iron sulfate, sodium lauryl sulfate, boric acid, and saccharin.
【００２１】次に、ドライフィルムレジスト５８および
これに覆われていたＮｉ−Ｆｅ合金薄膜５７およびＴｉ
薄膜を除去し、磁気収束板５２，５３を形成する。この
時の断面図が図１の（Ｄ）であり、その平面図は図２に
示す通りである。Next, the dry film resist 58 and the Ni--Fe alloy thin film 57 and Ti covered by the dry film resist 58 are formed.
The thin film is removed to form the magnetic flux concentrator plates 52 and 53. A sectional view at this time is shown in FIG. 1D, and its plan view is as shown in FIG.
【００２２】この磁気センサでは横方向の磁束は磁気収
束板５２，５３により収束されるが、ギャップ５６では
磁束が上下に広がり、これをホール素子５４，５５で検
出することができる。In this magnetic sensor, the lateral magnetic flux is converged by the magnetic flux concentrator plates 52 and 53, but the magnetic flux spreads vertically in the gap 56, which can be detected by the Hall elements 54 and 55.
【００２３】（第２の実施形態）次に、本発明の第２の
実施形態における磁気センサの製造プロセスフローを説
明する。基本構成は第１の実施形態と同じである。(Second Embodiment) Next, a manufacturing process flow of a magnetic sensor according to a second embodiment of the present invention will be described. The basic configuration is the same as that of the first embodiment.
【００２４】図４は、磁気収束板が形成される領域の一
部の断面を取り出して、この部分でのプロセスフローを
示すものである。FIG. 4 shows a cross section of a part of a region where the magnetic flux concentrator plate is formed, and shows a process flow in this part.
【００２５】信号処理回路およびホール素子を形成する
ＬＳＩ製造プロセスにおいて、図４の（Ａ）に示すよう
に、Ｐ＋領域６６およびこれに接続するスルーホール６
５，金属配線層６２を形成する。なお、金属配線層は複
数存在するが、本図では最上層のみ示してある。基板５
１は、Ｐ型シリコン基板である。In the LSI manufacturing process for forming the signal processing circuit and the Hall element, as shown in FIG. 4A, the P + region 66 and the through hole 6 connected thereto are formed.
5, the metal wiring layer 62 is formed. Although there are a plurality of metal wiring layers, only the uppermost layer is shown in this figure. Board 5
1 is a P-type silicon substrate.
【００２６】次に、絶縁層６１に磁気収束板を配置する
領域に、開口部６７を開ける。この時の図が図４の
（Ｂ）である。開口部６７では前面金属配線層６２の上
部が露出している。次に、電解鍍金により金属配線層６
２の開口部６７をシード層としてＮｉ−Ｆｅ合金薄膜６
５を１５μｍ堆積する。この時の図が図４の（Ｃ）であ
る。この時の鍍金槽を模式的に示す図が図７である。こ
の電解鍍金では、陰電極８２とシリコン基板５１はシリ
コン基板裏面全体で接触をとり、シリコン基板５１は表
側のみ鍍金液に曝されており、その他の部分は基板ホル
ダー８１で覆われている。鍍金時は金属配線層６２，ス
ルーホール６５，Ｐ＋領域６６，シリコン基板５１を電
流が流れ、Ｎｉ−Ｆｅ合金薄膜６５は開口部６７上のみ
に成長する。Next, an opening 67 is formed in the insulating layer 61 in the region where the magnetic flux concentrator is arranged. The diagram at this time is shown in FIG. The upper portion of the front metal wiring layer 62 is exposed at the opening 67. Next, the metal wiring layer 6 is formed by electrolytic plating.
Ni-Fe alloy thin film 6 using the second opening 67 as a seed layer
5 is deposited to a thickness of 15 μm. The diagram at this time is shown in FIG. FIG. 7 is a diagram schematically showing the plating tank at this time. In this electrolytic plating, the negative electrode 82 and the silicon substrate 51 contact each other on the entire back surface of the silicon substrate, the silicon substrate 51 is exposed to the plating solution only on the front side, and the other portion is covered with the substrate holder 81. During plating, a current flows through the metal wiring layer 62, the through hole 65, the P + region 66, and the silicon substrate 51, and the Ni—Fe alloy thin film 65 grows only on the opening 67.
【００２７】次に、図５を参照して、ホール素子領域の
断面構造を説明する。ホールプレート７５はｎ型拡散層
により形成される。なお、本図では、ホールプレート７
５に接続される配線は省略してある。ホールプレート７
５の上部は、電気的にＰ型基板に接続されたＰ型拡散層
７６により覆われている。Ｐ型拡散層は金属配線層７２
に接続されており、さらにＮｉ−Ｆｅ合金薄膜７５がこ
れらの上に形成される。Next, the sectional structure of the Hall element region will be described with reference to FIG. The hole plate 75 is formed of an n-type diffusion layer. In this figure, the hole plate 7
The wiring connected to 5 is omitted. Hall plate 7
The upper portion of 5 is covered with a P type diffusion layer 76 electrically connected to the P type substrate. The P-type diffusion layer is the metal wiring layer 72.
, And a Ni—Fe alloy thin film 75 is further formed thereon.
【００２８】図６は、第２の実施形態における磁気セン
サの平面図を示す。本図に示すように、磁気収束板６４
は複数のスルーホール６５およびホール素子部７８で基
板に接続されている。FIG. 6 is a plan view of the magnetic sensor according to the second embodiment. As shown in this figure, the magnetic flux concentrator 64
Are connected to the substrate through a plurality of through holes 65 and Hall element portions 78.
【００２９】[0029]
【発明の効果】以上述べた通り、請求項１〜請求項７に
係る本発明によれば、半導体ホール素子および軟磁性材
料による磁気収束板を有する磁気センサが、ＬＳＩの製
造工程に準拠した製造方法により小型かつ容易に製造で
きる。さらに、請求項３に係る本発明によれば、半導体
ホール素子に磁気収束板を近づけることができ、磁気セ
ンサの高感度化が実現できる。As described above, according to the present invention according to claims 1 to 7, a magnetic sensor having a semiconductor Hall element and a magnetic flux concentrator made of a soft magnetic material is manufactured according to the manufacturing process of an LSI. The method is small and easy to manufacture. Furthermore, according to the present invention of claim 3, the magnetic flux concentrator can be brought close to the semiconductor Hall element, and high sensitivity of the magnetic sensor can be realized.
【図１】第１の実施形態におけるプロセスフローを説明
する断面図である。FIG. 1 is a sectional view illustrating a process flow according to a first embodiment.
【図２】第１の実施形態における磁気センサの構成例を
示す平面図である。FIG. 2 is a plan view showing a configuration example of a magnetic sensor according to the first embodiment.
【図３】第１の実施形態におけるメッキ槽を示す模式図
である。FIG. 3 is a schematic diagram showing a plating tank according to the first embodiment.
【図４】第２の実施形態におけるプロセスフローを説明
する断面図である。FIG. 4 is a sectional view illustrating a process flow according to a second embodiment.
【図５】第２の実施形態におけるシリコンホール素子部
の構成例を示す断面図である。FIG. 5 is a cross-sectional view showing a configuration example of a silicon Hall element unit according to the second embodiment.
【図６】第２の実施形態における磁気センサの構成例を
示す平面図である。FIG. 6 is a plan view showing a configuration example of a magnetic sensor according to a second embodiment.
【図７】第２の実施形態におけるメッキ槽の模式図であ
る。FIG. 7 is a schematic view of a plating tank according to the second embodiment.
【図８】従来から知られている磁気センサの構成例を示
す断面図である。FIG. 8 is a cross-sectional view showing a configuration example of a conventionally known magnetic sensor.
５１ シリコン基板 ５２，５３ 磁気収束板 ５４，５５ ホール素子部 ５７ シード層 ６２ 金属配線層 ７８ ホール素子部 ８２ 陰電極 ８３ 陽電極 ８４ 電源 51 Silicon substrate 52, 53 Magnetic flux concentrator 54,55 Hall element part 57 seed layer 62 metal wiring layer 78 Hall element section 82 Cathode 83 Positive electrode 84 power supply
Claims (7)
磁気収束板の端部より漏れる磁束を半導体ホール素子に
より検出する磁気センサの製造方法であって、 前記半導体ホール素子を形成した後、電解鍍金により軟
磁性薄膜を堆積して前記磁気収束板を形成することを特
徴とする磁気センサの製造方法。1. A method of manufacturing a magnetic sensor, comprising a magnetic flux converging plate for converging magnetic flux, wherein magnetic flux leaking from an end of the magnetic flux concentrating plate is detected by a semiconductor Hall element, the method comprising: forming the semiconductor Hall element; A method of manufacturing a magnetic sensor, characterized in that a soft magnetic thin film is deposited by electrolytic plating to form the magnetic flux concentrator.
磁気収束板の端部より漏れる磁束を半導体ホール素子に
より検出する磁気センサの製造方法であって、 前記半導体ホール素子を形成した後、スパッタリングに
より軟磁性薄膜を堆積して前記磁気収束板を形成するこ
とを特徴とする磁気センサの製造方法。2. A method of manufacturing a magnetic sensor, comprising a magnetic flux converging plate for converging magnetic flux, wherein magnetic flux leaking from an end of the magnetic flux concentrating plate is detected by a semiconductor Hall element, the method comprising: forming the semiconductor Hall element; A method of manufacturing a magnetic sensor, comprising depositing a soft magnetic thin film by sputtering to form the magnetic flux concentrator.
磁気収束板の端部より漏れる磁束を半導体ホール素子に
より検出する磁気センサの製造方法であって、 前記半導体ホール素子の感受面上に窪みを形成し、軟磁
性薄膜を堆積して前記磁気収束板を形成することを特徴
とする磁気センサの製造方法。3. A method of manufacturing a magnetic sensor, comprising a magnetic flux converging plate for concentrating magnetic flux, wherein magnetic flux leaking from an end of the magnetic flux concentrating plate is detected by a semiconductor Hall element, the method being provided on a sensing surface of the semiconductor Hall element. A method of manufacturing a magnetic sensor, comprising forming a depression and depositing a soft magnetic thin film to form the magnetic flux concentrator.
磁気収束板の端部より漏れる磁束を半導体ホール素子に
より検出する磁気センサの製造方法であって、 前記半導体ホール素子の感受面上に窪みを形成し、軟磁
性薄膜を堆積して前記磁気収束板を形成する際に、前記
半導体ホール素子を形成した半導体基板上に信号処理回
路を同時に形成することを特徴とする磁気センサの製造
方法。4. A method of manufacturing a magnetic sensor comprising a magnetic flux converging plate for concentrating magnetic flux, wherein magnetic flux leaking from an end of the magnetic flux concentrating plate is detected by a semiconductor Hall element, the method being provided on a sensing surface of the semiconductor Hall element. A method of manufacturing a magnetic sensor, wherein a signal processing circuit is simultaneously formed on a semiconductor substrate on which the semiconductor Hall element is formed when forming a recess and depositing a soft magnetic thin film to form the magnetic flux concentrator. .
を収束する磁気収束板を形成した磁気センサの製造方法
であって、 半導体ホール素子および信号処理回路を形成した半導体
基板に電気的に接続されたシード層を設けることを特徴
とする磁気センサの製造方法。5. A method of manufacturing a magnetic sensor in which a soft magnetic thin film is deposited by electrolytic plating to form a magnetic flux concentrating plate for converging magnetic flux, which is electrically connected to a semiconductor substrate on which a semiconductor Hall element and a signal processing circuit are formed. A method of manufacturing a magnetic sensor, comprising providing a seed layer formed on the magnetic sensor.
を収束する磁気収束板を形成した磁気センサの製造方法
であって、 半導体ホール素子および信号処理回路を形成した半導体
基板に電気的に接続されたシード層を設けるにあたり、
前記半導体基板としてＰ型シリコン基板を用い、該Ｐ型
シリコン基板上に前記半導体ホール素子を形成する際
に、 ホールプレートがｎ型拡散層であり、該ｎ型拡散層の上
に前記Ｐ型シリコン基板と電気的に接続されたＰ型拡散
層を備え、さらに該Ｐ型拡散層の上に前記シード層を設
けることを特徴とする磁気センサの製造方法。6. A method of manufacturing a magnetic sensor in which a soft magnetic thin film is deposited by electrolytic plating to form a magnetic flux concentrating plate for converging magnetic flux, which is electrically connected to a semiconductor substrate on which a semiconductor Hall element and a signal processing circuit are formed. In providing the seed layer,
A P-type silicon substrate is used as the semiconductor substrate, and when forming the semiconductor Hall element on the P-type silicon substrate, the hole plate is an n-type diffusion layer, and the P-type silicon is provided on the n-type diffusion layer. A method for manufacturing a magnetic sensor, comprising a P-type diffusion layer electrically connected to a substrate, and further providing the seed layer on the P-type diffusion layer.
磁気収束板は、鉄，コバルト，ニッケルの内、少なくと
も２つを含むことを特徴とする磁気センサの製造方法。7. The method of manufacturing a magnetic sensor according to claim 1, wherein the magnetic flux concentrator includes at least two of iron, cobalt, and nickel.
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| JP2001336681A JP2003142752A (en) | 2001-11-01 | 2001-11-01 | Manufacturing method of magnetic sensor |
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