CN110998349B - Magnetic sensor - Google Patents

Magnetic sensor Download PDF

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Publication number
CN110998349B
CN110998349B CN201880052227.7A CN201880052227A CN110998349B CN 110998349 B CN110998349 B CN 110998349B CN 201880052227 A CN201880052227 A CN 201880052227A CN 110998349 B CN110998349 B CN 110998349B
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magnetoresistive element
magnetic
pattern
insulating layer
region
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CN110998349A (en
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伊藤吉博
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Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Abstract

The first magnetoresistive element (120a, 120b) includes: a first pattern section located inside a region (T) sandwiched between adjacently arranged magnetic members (40) of the at least two magnetic members (40) when viewed from a direction orthogonal to the insulating layer; and a second pattern part located outside the region (T). The first pattern portion and the second pattern portion each have a different pattern shape from each other, so that the detection sensitivity in the first magnetoresistive elements (120a, 120b) is equalized as compared with a case where the first pattern portion and the second pattern portion each have the same pattern shape as each other.

Description

Magnetic sensor
Technical Field
The present invention relates to a magnetic sensor, and more particularly to a magnetic sensor including a magnetoresistive element.
Background
As prior documents disclosing the structure of a magnetic sensor, there are japanese patent laid-open nos. 2013-44641 (patent document 1) and 2016/013345 (patent document 2).
The magnetic sensor described in patent document 1 includes a sensor circuit unit. The sensor circuit unit includes a first series circuit and a second series circuit. In the first series circuit, the first magnetoresistive element and the third magnetoresistive element are connected in series. In the second series circuit, the second magnetoresistive element and the fourth magnetoresistive element are connected in series. The sensor circuit unit is constituted by a bridge circuit in which a first series circuit and a second series circuit are connected in parallel.
Surfaces of the first magnetoresistive element, the second magnetoresistive element, the third magnetoresistive element, and the fourth magnetoresistive element are covered with an insulating layer. A magnetic layer made of a magnetic material is formed on each of the surfaces of the third magnetoresistive element and the fourth magnetoresistive element with an insulating layer interposed therebetween.
The magnetic sensor described in patent document 2 includes a first magnetoresistive element and a second magnetoresistive element having a smaller resistance change rate than the first magnetoresistive element. The first magnetoresistive element, which is a so-called magnetic sensor element, includes patterns arranged in concentric circles.
Prior art documents
Patent document
Patent document 1: japanese patent laid-open publication No. 2013-44641
Patent document 2: international publication No. 2016/013345
Disclosure of Invention
Problems to be solved by the invention
In the magnetic sensor described in patent document 1, the magnetic field to be measured is concentrated by the magnetic material member and the magnetic field distribution becomes uneven, and therefore there is room for suppressing variation in the detection sensitivity of the magnetic sensor according to the direction of the magnetic field to be measured.
In the magnetic sensor described in patent document 2, the isotropy of the magnetic field detection is improved by the pattern shape of the magnetoresistive element, but the case where the magnetic layer is provided is not considered.
The present invention has been made in view of the above problems, and an object thereof is to provide a magnetic sensor in which variation in detection sensitivity according to the direction of a magnetic field to be measured, which is generated by a magnetic material member that collects the magnetic field to be measured, is suppressed.
Means for solving the problems
A magnetic sensor according to a first aspect of the present invention includes a first magnetoresistive element, a second magnetoresistive element, an insulating layer, and at least a first magnetic member of a first magnetic member and a second magnetic member different from the first magnetic member. The second magnetoresistive element is electrically connected to the first magnetoresistive element to form a bridge circuit. The insulating layer covers the first magnetoresistive element and the second magnetoresistive element. The first magnetic member and the second magnetic member are located on the insulating layer. The first magnetoresistive element has at least one of an outer periphery and an inner periphery. The first magnetic member is located in a region located inward of the outer peripheral edge of the first magnetoresistive element when viewed in a direction orthogonal to the insulating layer. The second magnetoresistive element is covered with the first magnetic member in a region located inward of the inner peripheral edge of the first magnetoresistive element when viewed in a direction orthogonal to the insulating layer, or is covered with the second magnetic member in a region located outward of the outer peripheral edge of the first magnetoresistive element. The number of the first magnetic members or the total number of the first magnetic members and the second magnetic members is two or more. The first magnetoresistive element includes: a first pattern section located inside a region sandwiched between adjacently arranged magnetic members of the first magnetic member and the second magnetic member, when viewed in a direction orthogonal to the insulating layer; and a second pattern part located outside the region. The first pattern portion and the second pattern portion each have a different pattern shape from each other, so that the detection sensitivity in the first magnetoresistive element is equalized as compared with a case where the first pattern portion and the second pattern portion each have the same pattern shape as each other.
A magnetic sensor according to a second aspect of the present invention includes a first magnetoresistive element, a second magnetoresistive element, an insulating layer, and two or more first magnetic members. The second magnetoresistive element is electrically connected to the first magnetoresistive element to form a bridge circuit. The insulating layer covers the first magnetoresistive element and the second magnetoresistive element. The first magnetic member is located on the insulating layer. The first magnetoresistive element has an outer periphery and an inner periphery. The first magnetic member is located in a region located inward of the outer peripheral edge of the first magnetoresistive element when viewed in a direction orthogonal to the insulating layer. The second magnetoresistive element is located in a region inside the inner peripheral edge of the first magnetoresistive element when viewed in a direction orthogonal to the insulating layer and is covered with the first magnetic member. The first magnetoresistive element includes: a first pattern section located inside a region sandwiched between first magnetic members arranged adjacent to each other when viewed from a direction orthogonal to the insulating layer; and a second pattern part located outside the region. The first pattern portion and the second pattern portion have different pattern shapes.
A magnetic sensor according to a third aspect of the present invention includes a first magnetoresistive element, a second magnetoresistive element, an insulating layer, and at least one first magnetic member and at least one second magnetic member. The second magnetoresistive element is electrically connected to the first magnetoresistive element to form a bridge circuit. The insulating layer covers the first magnetoresistive element and the second magnetoresistive element. The first magnetic member and the second magnetic member are located on the insulating layer. The first magnetoresistive element has an outer periphery. The first magnetic member is located in a region located inward of the outer peripheral edge of the first magnetoresistive element when viewed in a direction orthogonal to the insulating layer. The second magnetoresistive element is located outside the outer periphery of the first magnetoresistive element and is covered with the second magnetic member. The first magnetoresistive element includes: a first pattern section located inside a region sandwiched between adjacently arranged magnetic members of the first magnetic member and the second magnetic member, when viewed in a direction orthogonal to the insulating layer; and a second pattern part located outside the region. The first pattern portion and the second pattern portion have different pattern shapes.
A magnetic sensor according to a fourth aspect of the present invention includes a first magnetoresistive element, a second magnetoresistive element, an insulating layer, and at least two magnetic material members. The second magnetoresistive element is electrically connected to the first magnetoresistive element to form a bridge circuit. The insulating layer covers the first magnetoresistive element and the second magnetoresistive element. At least two magnetic members are located on the insulating layer. The second magnetoresistive element is covered with at least a part of the at least two magnetic body members when viewed from a direction orthogonal to the insulating layer. The first magnetoresistive element includes: a first pattern section located inside a region sandwiched between magnetic members arranged adjacent to each other, of the at least two magnetic members, when viewed in a direction orthogonal to the insulating layer; and a second pattern part located outside the region. The first pattern portion and the second pattern portion each have a different pattern shape from each other, so that the detection sensitivity in the first magnetoresistive element is equalized as compared with a case where the first pattern portion and the second pattern portion each have the same pattern shape as each other.
In one embodiment of the present invention, the line widths of the patterns of the first pattern portion and the second pattern portion are different from each other.
In one embodiment of the present invention, the number of patterns of the first pattern portion and the second pattern portion is different from each other.
Effects of the invention
According to the present invention, it is possible to suppress a variation in detection sensitivity of the magnetic sensor according to the direction of the magnetic field to be measured, which is generated by the magnetic material member that collects the magnetic field to be measured.
Drawings
Fig. 1 is a perspective view showing the structure of a magnetic sensor according to embodiment 1 of the present invention.
Fig. 2 is a plan view of the magnetic sensor of fig. 1 as viewed from the direction of arrow II.
Fig. 3 is an equivalent circuit diagram of the magnetic sensor according to embodiment 1 of the present invention.
Fig. 4 is a cross-sectional view showing a laminated structure of a connection portion between a magnetoresistive element and a wiring in a circuit board of a magnetic sensor according to embodiment 1 of the present invention.
Fig. 5 is a plan view showing a pattern of the first magnetoresistive element of the magnetic sensor according to embodiment 1 of the present invention.
Fig. 6 is a plan view showing a pattern of the second magnetoresistive element of the magnetic sensor according to embodiment 1 of the present invention.
Fig. 7 is a contour diagram showing the result of a simulation analysis of the magnetic flux density distribution when a horizontal magnetic field in the Y-axis direction is applied to the magnetic sensor according to embodiment 1 of the present invention.
Fig. 8 is a plan view showing the structure of a magnetic sensor according to embodiment 2 of the present invention.
Fig. 9 is a plan view showing a pattern of the first magnetoresistive element of the magnetic sensor according to embodiment 2 of the present invention.
Fig. 10 is a perspective view showing the structure of a magnetic sensor according to embodiment 3 of the present invention.
Fig. 11 is a plan view of the magnetic sensor of fig. 10 as viewed from the direction of arrow XI.
Fig. 12 is a plan view showing a pattern of the first magnetoresistive element of the magnetic sensor according to embodiment 3 of the present invention.
Fig. 13 is a plan view showing the structure of a magnetic sensor according to embodiment 4 of the present invention.
Fig. 14 is a plan view showing the structure of a magnetic sensor according to embodiment 5 of the present invention.
Detailed Description
Hereinafter, a magnetic sensor according to each embodiment of the present invention will be described with reference to the drawings. In the following description of the embodiments, the same or corresponding portions in the drawings are denoted by the same reference numerals, and the description thereof will not be repeated.
(embodiment mode 1)
Fig. 1 is a perspective view showing the structure of a magnetic sensor according to embodiment 1 of the present invention. Fig. 2 is a plan view of the magnetic sensor of fig. 1 as viewed from the direction of arrow II. Fig. 3 is an equivalent circuit diagram of the magnetic sensor according to embodiment 1 of the present invention. In fig. 2, the outer edge of the first magnetic member 40 described later is indicated by a dotted line. In fig. 1, a width direction of the circuit board 100 described later is shown as an X-axis direction, a length direction of the circuit board 100 is shown as a Y-axis direction, and a thickness direction of the circuit board 100 is shown as a Z-axis direction. In fig. 2, a differential amplifier, a temperature compensation circuit, and the like, which will be described later, are not shown.
As shown in fig. 1 and 2, a magnetic sensor 1 according to embodiment 1 of the present invention includes a circuit board 100 and two first magnetic members 40 provided on the circuit board 100. The circuit substrate 100 includes a semiconductor substrate 110.
As shown in fig. 2 and 3, four magnetoresistive elements that constitute a wheatstone bridge type bridge circuit are electrically connected to each other by wiring on a circuit substrate 100 of a magnetic sensor 1 according to embodiment 1 of the present invention. The four magnetoresistive elements are constituted by two sets of a first magnetoresistive element and a second magnetoresistive element. Specifically, the magnetic sensor 1 includes a first magnetoresistive element 120a and a second magnetoresistive element 130a and a first magnetoresistive element 120b and a second magnetoresistive element 130 b. The first magnetoresistive element 120a and the second magnetoresistive element 130a constitute one group. The first magnetoresistive element 120b and the second magnetoresistive element 130b constitute one group.
In the present embodiment, the magnetic sensor 1 includes two sets of the first magnetoresistive element and the second magnetoresistive element, but is not limited thereto as long as it includes at least one set of the first magnetoresistive element and the second magnetoresistive element. When the magnetic sensor 1 includes only one set of the first magnetoresistive element and the second magnetoresistive element, the circuit board 100 forms a half-bridge circuit.
The first magnetoresistive elements 120a, 120b and the second magnetoresistive elements 130a, 130b are each an AMR (Anisotropic magnetoresistive) element. Instead of the AMR element, each of the first magnetoresistive elements 120a and 120b and the second magnetoresistive elements 130a and 130b may be a magnetoresistive element such as a GMR (Giant magnetoresistive) element, a TMR (Tunnel magnetoresistive) element, a BMR (Ballistic magnetoresistive) element, or a CMR (Colossal magnetoresistive) element.
The second magnetoresistive element 130a is magnetically shielded by the first magnetic member 40 as described later, and thus becomes a so-called fixed resistance in which a magnetic field in the Z-axis direction (vertical magnetic field) and magnetic fields in the X-axis direction and the Y-axis direction (horizontal magnetic field) are hardly detected. The first magnetoresistive element 120a is a so-called magnetosensitive resistor whose resistance value changes by application of an external magnetic field.
Similarly, the second magnetoresistive element 130b is magnetically shielded by the first magnetic member 40 as described later, and therefore, a so-called fixed resistance in which a magnetic field in the Z-axis direction (vertical magnetic field) and magnetic fields in the X-axis direction and the Y-axis direction (horizontal magnetic field) are hardly detected is obtained. The first magnetoresistive element 120b is a so-called magnetosensitive resistor whose resistance value changes by application of an external magnetic field.
The first magnetoresistive elements 120a and 120b and the second magnetoresistive elements 130a and 130b are electrically connected to each other through wiring provided on the semiconductor substrate 110. Specifically, the first magnetoresistive element 120a and the second magnetoresistive element 130a are connected in series by a wiring 146. The first magnetoresistive element 120b and the second magnetoresistive element 130b are connected in series by a wiring 150.
The semiconductor substrate 110 of the circuit substrate 100 is further provided with a midpoint 140, a midpoint 141, a power supply terminal (Vcc)142, a ground terminal (Gnd)143, and an output terminal (Out) 144.
The first magnetoresistive element 120a and the second magnetoresistive element 130b are each connected to the midpoint 140. Specifically, the first magnetoresistive element 120a and the midpoint 140 are connected by a wiring 145, and the second magnetoresistive element 130b and the midpoint 140 are connected by a wiring 152.
The first magnetoresistive element 120b and the second magnetoresistive element 130a are each connected to the midpoint 141. Specifically, the first magnetoresistive element 120b and the midpoint 141 are connected by a wiring 149, and the second magnetoresistive element 130a and the midpoint 141 are connected by a wiring 148.
The wiring 146 is connected to a power supply terminal (Vcc)142 to which a current is input. The wiring 150 is connected to the ground terminal (Gnd) 143.
As shown in fig. 3, the magnetic sensor 1 further includes a differential amplifier 160, a temperature compensation circuit 161, a latch and switch circuit 162, and a CMOS (Complementary Metal Oxide Semiconductor) driver 163. The differential amplifier 160, the temperature compensation circuit 161, the latch and switch circuit 162, and the CMOS driver 163 are provided on the semiconductor substrate 110.
The differential amplifier 160 has an input terminal connected to the midpoint 140 and the midpoint 141, respectively, and an output terminal connected to the temperature compensation circuit 161. The differential amplifier 160 is connected to the power supply terminal (Vcc)142 and the ground terminal (Gnd)143, respectively.
The output terminal of the temperature compensation circuit 161 is connected to the latch and switch circuit 162. The temperature compensation circuit 161 is connected to the power supply terminal (Vcc)142 and the ground terminal (Gnd)143, respectively.
The output of the latch and switch circuit 162 is connected to the CMOS driver 163. The latch and switch circuit 162 is connected to the power supply terminal (Vcc)142 and the ground terminal (Gnd)143, respectively.
An output terminal of the CMOS driver 163 is connected to an output terminal (Out) 144. The CMOS driver 163 is connected to the power supply terminal (Vcc)142 and the ground terminal (Gnd)143, respectively.
The magnetic sensor 1 has the above-described circuit configuration, and thereby generates a potential difference between the midpoint 140 and the midpoint 141 depending on the intensity of the external magnetic field. When the potential difference exceeds a predetermined detection level, a signal is output from an output terminal (Out) 144.
Fig. 4 is a cross-sectional view showing a laminated structure of a connection portion between a magnetoresistive element and a wiring in a circuit board of a magnetic sensor according to embodiment 1 of the present invention. Fig. 4 shows only a connection portion between a region R functioning as a magnetoresistive element and a region L functioning as a wiring.
As shown in FIG. 4, the first magnetoresistive elements 120a, 120b and the second magnetoresistive elements 130a, 130b are provided with SiO on the surface2Layer or Si3N4A layer or the like on the semiconductor substrate 110 made of Si or the like. The first magnetoresistive elements 120a and 120b and the second magnetoresistive elements 130a and 130b are formed by patterning the magnetic layer 10 made of an alloy containing Ni and Fe provided on the semiconductor substrate 110 by an ion milling (ion milling) method. The thickness of the magnetic layer 10 is, for example, 0.04 μm.
The wirings 145, 146, 148, 149, 150, and 152 are formed by patterning a conductive layer 20 made of Au, Al, or the like provided on the semiconductor substrate 110 by wet etching. The conductive layer 20 is located directly above the magnetic layer 10 in the region L functioning as a wiring, and is not provided in the region R functioning as a magnetoresistive element. Therefore, as shown in fig. 4, the end of the conductive layer 20 is located directly above the magnetic layer 10 at the connection between the region R functioning as a magnetoresistive element and the region L functioning as a wiring.
The midpoint 140, the midpoint 141, the power supply terminal (Vcc)142, the ground terminal (Gnd)143, and the output terminal (Out)144 are each constituted by the conductive layer 20 located directly above the semiconductor substrate 110. That is, the midpoint 140, the midpoint 141, the power supply terminal (Vcc)142, the ground terminal (Gnd)143, and the output terminal (Out)144 are each constituted by a pad provided on the semiconductor substrate 110.
A Ti layer, not shown, is provided directly above the conductive layer 20. Is provided with a layer of SiO2And an insulating layer 30 formed so as to cover the magnetic layer 10 and the conductive layer 20. That is, the insulating layer 30 covers the first magnetoresistive elements 120a and 120b and the second magnetoresistive elements 130a and 130 b.
Fig. 5 is a plan view showing a pattern of the first magnetoresistive element of the magnetic sensor according to embodiment 1 of the present invention. As shown in fig. 2 and 5, the pattern 120 of the first magnetoresistive elements 120a and 120b includes an imaginary circle C arranged along the imaginary circle C when viewed from the direction orthogonal to the insulating layer 301In an imaginary circleC1And four first unit patterns arranged in a radial direction and connected to each other. The direction orthogonal to the insulating layer 30 is the Z-axis direction, and is parallel to the direction orthogonal to the upper surface of the semiconductor substrate 110.
Four first unit patterns each on the imaginary circle C1Is located along an imaginary C-shape C of which the portion where the wirings 146, 148, 150, 152 are located is open11The position of (a). The four first unit patterns are each a C-shaped pattern 121, and the C-shaped patterns 121 are arranged concentrically so as to follow an imaginary C-shape C11In the imaginary circle C1Are arranged in the radial direction.
Four C-shaped patterns 121 are drawn from the imaginary circle C1Are alternately connected to each other at one end and the other end in order from the center side. The C-shaped patterns 121, one end of which is connected to each other, are connected to each other by a semi-circular arc pattern 122. The C-shaped patterns 121, the other ends of which are connected to each other, are connected to each other by a semi-circular arc pattern 123.
The pattern 120 of the first magneto- resistive elements 120a, 120b includes two semi-arc patterns 122 and one semi-arc pattern 123. Thereby, the four C-shaped patterns 121 are connected in series. The semicircular arc patterns 122 and 123 do not include linear extending portions, but are constituted only by bent portions.
Slave imaginary circle C of four C-shaped patterns 1211The end of the C-shaped pattern located at the outermost side from the center thereof, which is not connected to the semi-arc pattern 122, is connected to the wiring 145 or the wiring 149 formed of the conductive layer 20. Likewise, the slave imaginary circle C in the four C-shaped patterns 1211The end of the C-shaped pattern located at the innermost side from the center thereof, which is not connected to the semi-arc pattern 122, is connected to the wiring 146 or 150 formed of the conductive layer 20.
Slave imaginary circle C of four C-shaped patterns 1211The outer peripheral edge of the C-shaped pattern 121 positioned at the outermost side from the center thereof is the outer peripheral edge of the first magnetoresistive elements 120a and 120 b. Slave imaginary circle C of four C-shaped patterns 1211The inner peripheral edge of the C-shaped pattern 121 located at the innermost side from the center thereof becomes the inner peripheral edge of the first magnetoresistive elements 120a, 120 b.
As shown in figure 2 of the drawings, in which,the first magnetoresistive element 120a and the first magnetoresistive element 120b have different circumferential directions such that the imaginary C-shape C is11Are different from each other. That is, the circumferential directions of the patterns 120 of the first magnetoresistive element 120a and the first magnetoresistive element 120b are different, so that the directions of the C-shaped patterns 121 are different from each other.
In the present embodiment, the orientations of the patterns 120 of the first magnetoresistive element 120a and the first magnetoresistive element 120b in the circumferential direction are different by 90 °, so that the orientations of the C-shaped patterns 121 are different by 90 ° from each other.
Fig. 6 is a plan view showing a pattern of the second magnetoresistive element of the magnetic sensor according to embodiment 1 of the present invention. As shown in fig. 2 and 6, the second magnetoresistive element 130a is located on an imaginary circle C when viewed from a direction orthogonal to the insulating layer 301Is surrounded by the first magnetoresistive element 120a, and the second magnetoresistive element 130b is located on an imaginary circle C when viewed from a direction orthogonal to the insulating layer 301And is surrounded by the first magnetoresistive element 120 b. That is, the second magnetoresistive element 130a is located inward of the inner peripheral edge of the first magnetoresistive element 120a when viewed from the direction orthogonal to the insulating layer 30, and the second magnetoresistive element 130b is located inward of the inner peripheral edge of the first magnetoresistive element 120b when viewed from the direction orthogonal to the insulating layer 30.
The second magneto-resistive element 130a and the imaginary circle C1Is set up to the imaginary circle C from the center side1The wirings 146 and 148 formed of the conductive layer 20 on the outer side of (b) are connected. Second magnetoresistive element 130b and the slave imaginary circle C1Is set up to the imaginary circle C from the center side1The wirings 150 and 152 formed of the conductive layer 20 on the outer side of (b) are connected.
The second magnetoresistive elements 130a, 130b have a double spiral pattern 130 as viewed from a direction orthogonal to the insulating layer 30. The double-spiral pattern 130 includes one spiral pattern 131 as one of the two second unit patterns, the other spiral pattern 132 as the other of the two second unit patterns, and an inverse S-shaped pattern 133 connecting the one spiral pattern 131 and the other spiral pattern 132 at a central portion of the double-spiral pattern 130. The reverse S-shaped pattern 133 does not include a linear extending portion, and is constituted only by a bent portion.
As shown in fig. 2, the directions of the dual spiral patterns 130 of the second magnetoresistive element 130a and the second magnetoresistive element 130b in the circumferential direction are different, so that the directions of the inverse S-shaped patterns 133 are different from each other.
In the present embodiment, the orientations of the double spiral patterns 130 of the second magnetoresistive element 130a and the second magnetoresistive element 130b in the circumferential direction are different by 90 °, so that the orientations of the reverse S-shaped patterns 133 are different by 90 ° from each other.
In the magnetic sensor 1 according to the present embodiment, the first magnetoresistive elements 120a and 120b have a C-shaped pattern 121. The C-shaped pattern 121 is formed of circular arcs. The C-shaped patterns 121 adjacent to each other are connected to each other by a semi-circular arc pattern 122 or a semi-circular arc pattern 123. In this way, since the first magnetoresistive elements 120a and 120b do not include the linear extension portions, anisotropy in magnetic field detection can be reduced.
Further, in the magnetic sensor 1 according to the present embodiment, the circumferential directions of the patterns 120 are different from each other so that the directions of the C-shaped patterns 121 of the first magnetoresistive elements 120a and the directions of the C-shaped patterns 121 of the first magnetoresistive elements 120b are different from each other, and thereby the isotropy of the magnetic field detection is increased.
In the magnetic sensor 1 according to the present embodiment, the second magnetoresistive elements 130a and 130b are disposed inside the first magnetoresistive elements 120a and 120b, and therefore the magnetic sensor 1 can be made compact. In the magnetic sensor 1, since there is no need to spatially route the wiring connecting the first magnetoresistive elements 120a and 120b and the second magnetoresistive elements 130a and 130b, the circuit board 100 can be manufactured by a simple manufacturing process.
In the magnetic sensor 1 according to the present embodiment, two first magnetic members 40 are provided on the insulating layer 30, and the two first magnetic members 40 are arranged in the Y axis direction. The thickness of the first magnetic member 40 is, for example, 10 μm or more, preferably 20 μm or more and 150 μm or less. When the thickness of the first magnetic member 40 is 10 μm or more, the vertical magnetic field biased in the substantially horizontal direction by the first magnetic member 40 can be detected by the first magnetoresistive elements 120a and 120 b. When the thickness of the first magnetic member 40 is 20 μm or more, the vertical magnetic field can be more effectively deflected in the substantially horizontal direction by the first magnetic member 40, and therefore a weaker vertical magnetic field can be detected by the first magnetoresistive elements 120a and 120 b. When the thickness of the first magnetic member 40 is 150 μm or less, the formation time of the first magnetic member 40 can be suppressed from increasing, and the mass productivity of the magnetic sensor 1 can be maintained.
As shown in fig. 2, the first magnetic member 40 has a circular outer shape when viewed from the direction orthogonal to the insulating layer 30, and is located in a region inside the outer peripheral edges of the first magnetoresistive elements 120a and 120 b. The region inside the outer peripheral edge of the first magnetoresistive element 120a or 120b is a region surrounded when both ends of the outer peripheral edge of the first magnetoresistive element 120a or 120b are connected by an imaginary straight line as viewed from the direction orthogonal to the insulating layer 30. Preferably, the region inside the outer peripheral edges of the first magnetoresistive elements 120a and 120b overlaps at least half of the first magnetic member 40, and more preferably overlaps at least 2/3 of the first magnetic member 40, when viewed in the direction orthogonal to the insulating layer 30.
In the present embodiment, the first magnetic member 40 is located in a region inside the inner circumferential edges of the first magnetoresistive elements 120a and 120b when viewed from the direction orthogonal to the insulating layer 30. The region inside the inner circumferential edges of the first magnetoresistive elements 120a and 120b is a region surrounded when both ends of the inner circumferential edges of the first magnetoresistive elements 120a and 120b are connected by an imaginary straight line as viewed from the direction orthogonal to the insulating layer 30. The first magnetic member 40 may be located on the inner circumferential edges of the first magnetoresistive elements 120a and 120b and in a region including a region inside the inner circumferential edges, as viewed in a direction orthogonal to the insulating layer 30. Preferably, a region inside the inner circumferential edges of the first magnetoresistive elements 120a and 120b overlaps with at least half of the first magnetic member 40, and more preferably overlaps with at least 2/3 of the first magnetic member 40, when viewed in a direction orthogonal to the insulating layer 30.
In the present embodiment, the first magnetic member 40 is located concentrically with the outer peripheral edges of the first magnetoresistive elements 120a and 120b when viewed from the direction orthogonal to the insulating layer 30.
In the present embodiment, the first magnetic member 40 covers only the second magnetoresistive elements 130a and 130b of the first magnetoresistive elements 120a and 120b and the second magnetoresistive elements 130a and 130b, as viewed from the direction orthogonal to the insulating layer 30. Therefore, the first magnetic member 40 is surrounded by the first magnetoresistive elements 120a and 120b when viewed from the direction orthogonal to the insulating layer 30.
The first magnetic member 40 is made of a magnetic material having a high magnetic permeability and a high saturation magnetic flux density, such as electromagnetic steel, soft iron steel, silicon steel, permalloy, super permalloy, nickel alloy, iron alloy, or ferrite. These magnetic materials preferably have a low coercive force.
When a magnetic material having a high magnetic permeability at a high temperature and a low magnetic permeability at a low temperature, for example, an Fe-78Ni alloy or the like is used as the magnetic material constituting the first magnetic member 40, the temperature dependence of the resistance change rate of the first magnetoresistive elements 120a and 120b can be reduced.
The first magnetic member 40 is formed by plating, for example. Further, another thin layer may be provided between the insulating layer 30 and the first magnetic member 40. When the first magnetic member 40 is formed by plating, at least one of an adhesion layer containing Ti (titanium) and an electrode reaction layer containing Au (gold), for example, may be formed between the insulating layer 30 and the first magnetic member 40.
Here, a description will be given of a result of a simulation analysis of a magnetic flux density distribution in a case where a horizontal magnetic field in the Y-axis direction is applied to magnetic sensors in which two first magnetic members 40 are arranged in a row in the Y-axis direction as shown in fig. 1.
As a condition for the simulation analysis, the first magnetic member 40 was formed in a cylindrical shape having a diameter of 140 μm and a thickness of 100 μm. The interval between the first magnetic members 40, specifically, the interval between the centers of the first magnetic members 40 as viewed from the direction orthogonal to the insulating layer 30 was set to 250 μm. The first magnetic member 40 is made of permalloy. The strength of the applied horizontal magnetic field was set to 2.0 mT.
Fig. 7 is a contour diagram showing the result of a simulation analysis of the magnetic flux density distribution when a horizontal magnetic field in the Y-axis direction is applied to the magnetic sensor according to embodiment 1 of the present invention. Fig. 7 is a plan view similar to fig. 2.
In FIG. 7, using E1Shows a line with a magnetic flux density of 0.4mT, with E2Shows a line with a magnetic flux density of 0.8mT, with E3Shows a line with a magnetic flux density of 1.2mT, with E4Shows a line with a magnetic flux density of 1.6mT, with E5The line with a magnetic flux density of 2.0mT is shown, the line with a magnetic flux density of 2.4mT is shown with E6, with E7Shows a line with a magnetic flux density of 2.8mT, with E8Shows a line with a magnetic flux density of 3.2mT, with E9A line with a magnetic flux density of 3.6mT is shown.
As shown in fig. 7, in the region sandwiched by the first magnetic members 40, the magnetic flux density is maintained high even if the magnetic flux density is away from the first magnetic members 40 as compared with other regions located around the first magnetic members 40. In this way, in the magnetic sensor including the magnetic member, the magnetic field distribution is not uniform due to the influence of the magnetic member, and therefore the detection sensitivity of the magnetic sensor tends to vary depending on the direction of the magnetic field to be measured.
The number and arrangement of the magnetic members are not limited to those described above. In the simulation analysis result described above, although the magnetic flux density tends to be maintained high in the region sandwiched between the first magnetic members 40, depending on the relationship between the arrangement of the plurality of magnetic members and the direction of the magnetic field to be measured, the magnetic flux density of the region sandwiched between the adjacent magnetic members is not necessarily maintained high, and conversely, the magnetic flux density of the region sandwiched between the adjacent magnetic members may be lower than that of the other region located around the magnetic members.
Therefore, in the magnetic sensor 1 according to the present embodiment, as shown in fig. 2 and 5, the pattern 120 of the first magnetoresistive elements 120a and 120b includes: a first pattern portion 120T located inside a region T sandwiched by the first magnetic members 40 arranged adjacent to each other in the Y-axis direction when viewed from a direction orthogonal to the insulating layer 30; and a second pattern part 120S located outside the region T. The first pattern portion 120T and the second pattern portion 120S each have a different pattern shape from each other, so that the detection sensitivity in the first magnetoresistive elements 120a, 120b is equalized as compared with the case where the first pattern portion 120T and the second pattern portion 120S each have the same pattern shape as each other.
In the present embodiment, the line widths of the patterns of the first pattern portion 120T and the second pattern portion 120S are different from each other. Specifically, the line width of the first pattern part 120T is wider than that of the second pattern part 120S. As a result, the detection sensitivity of the first pattern portion 120T to the horizontal magnetic field in the Y-axis direction is lowered, and therefore the detection sensitivity of the first magnetoresistive elements 120a and 120b is equalized.
When a horizontal magnetic field in the Y-axis direction is applied, the line width of the first pattern portion 120T is made narrower than the line width of the second pattern portion 120S when the magnetic flux density of the region T sandwiched between the adjacent first magnetic members 40 becomes lower than that of the other region located around the first magnetic member 40. This increases the detection sensitivity of the first pattern portion 120T to the horizontal magnetic field in the Y-axis direction, and thus the detection sensitivity of the first magnetoresistive elements 120a and 120b is equalized.
As described above, the magnetic sensor 1 according to the present embodiment can suppress the variation in the detection sensitivity of the magnetic sensor 1 according to the direction of the magnetic field to be measured, which is generated by the first magnetic material member 40 that collects the magnetic field to be measured.
In the present embodiment, the line width of the first pattern portion 120T is changed uniformly, but the present invention is not limited to this embodiment, and for example, the line width of the first pattern portion 120T may be changed intermittently, or the line width of the first pattern portion 120T may be changed gradually.
(embodiment mode 2)
The magnetic sensor according to embodiment 2 of the present invention will be described below with reference to the drawings. In addition, the magnetic sensor according to embodiment 2 of the present invention is mainly different from the magnetic sensor 1 according to embodiment 1 of the present invention in the pattern that the first magnetoresistive element has, and therefore, description thereof will not be repeated with respect to the same configuration as the magnetic sensor 1 according to embodiment 1 of the present invention.
Fig. 8 is a plan view showing the structure of a magnetic sensor according to embodiment 2 of the present invention. Fig. 9 is a plan view showing a pattern of the first magnetoresistive element of the magnetic sensor according to embodiment 2 of the present invention. As shown in fig. 8, the magnetic sensor 2 according to embodiment 2 of the present invention includes a circuit board 200 and two first magnetic members 40 provided on the circuit board 200.
As shown in fig. 8 and 9, the pattern 220 of the first magnetoresistive elements 220a and 220b of the magnetic sensor 2 according to embodiment 2 of the present invention includes: a first pattern portion 220T located inside a region T sandwiched by the first magnetic members 40 arranged adjacent to each other in the Y-axis direction when viewed from a direction orthogonal to the insulating layer 30; and a second pattern portion 220S located outside the region T. The first pattern portion 220T and the second pattern portion 220S each have a different pattern shape from each other, so that the detection sensitivity in the first magnetoresistive elements 220a, 220b is equalized as compared with the case where the first pattern portion 220T and the second pattern portion 220S each have the same pattern shape as each other.
In the present embodiment, the number of patterns of the first pattern portion 220T and the second pattern portion 220S are different from each other. Specifically, the number of patterns of the first pattern part 220T is smaller than that of the second pattern part 220S. As a result, the first pattern portion 220T has a lower detection sensitivity to the horizontal magnetic field in the Y-axis direction, and therefore the detection sensitivity of the first magnetoresistive elements 220a and 220b is equalized.
When a horizontal magnetic field in the Y-axis direction is applied, if the magnetic flux density in the region T sandwiched between the adjacent first magnetic members 40 becomes lower than that in other regions located around the first magnetic members 40, the number of patterns of the first pattern portions 220T is made larger than the number of patterns of the second pattern portions 220S. As a result, the first pattern portion 220T has a higher detection sensitivity to the horizontal magnetic field in the Y-axis direction, and therefore the detection sensitivity of the first magnetoresistive elements 220a and 220b is equalized.
As described above, the magnetic sensor 2 according to the present embodiment can suppress the variation in the detection sensitivity of the magnetic sensor 2 according to the direction of the magnetic field to be measured, which is generated by the first magnetic material member 40 that collects the magnetic field to be measured.
(embodiment mode 3)
Hereinafter, a magnetic sensor according to embodiment 3 of the present invention will be described with reference to the drawings. The magnetic sensor according to embodiment 3 of the present invention is different from the magnetic sensor 1 according to embodiment 1 of the present invention mainly in the pattern of each of the first magnetoresistive elements and the second magnetoresistive elements, the arrangement of the second magnetoresistive elements, and the provision of the second magnetic member, and therefore, the same configuration as the magnetic sensor 1 according to embodiment 1 of the present invention will not be described again.
Fig. 10 is a perspective view showing the structure of a magnetic sensor according to embodiment 3 of the present invention. Fig. 11 is a plan view of the magnetic sensor of fig. 10 as viewed from the direction of arrow XI. As shown in fig. 10 and 11, the magnetic sensor 3 according to embodiment 3 of the present invention includes a circuit board 300, and two first magnetic members 40 and two second magnetic members 50 provided on the circuit board 300.
The circuit board 300 of the magnetic sensor 3 according to embodiment 3 of the present invention is provided with four magnetoresistive elements electrically connected to each other by wiring to form a wheatstone bridge type bridge circuit. The four magnetoresistive elements are constituted by two sets of a first magnetoresistive element and a second magnetoresistive element. Specifically, the magnetic sensor 3 includes a first magnetoresistive element 320a and a second magnetoresistive element 330a and a first magnetoresistive element 320b and a second magnetoresistive element 330 b. The first magnetoresistive element 320a and the second magnetoresistive element 330a constitute one group. The first magnetoresistive element 320b and the second magnetoresistive element 330b constitute one group.
Fig. 12 is a plan view showing a pattern of the first magnetoresistive element of the magnetic sensor according to embodiment 3 of the present invention. As shown in fig. 11 and 12, the first magnetoresistive elements 320a and 320b have a double spiral pattern 320 when viewed from a direction perpendicular to the insulating layer 30. The double spiral pattern 320 includes two first unit patterns that are arranged concentrically and connected to each other so as to be aligned in a radial direction of the imaginary circle along a circumference of the imaginary circle, as viewed from a direction orthogonal to the insulating layer 30.
The double spiral pattern 320 includes one spiral pattern 321 as a first unit pattern, the other spiral pattern 322 as a first unit pattern, and an S-shaped pattern 323 connecting the one spiral pattern 321 and the other spiral pattern 322 at a central portion of the double spiral pattern 320. The S-shaped pattern 323 does not include a linear extending portion, and is constituted only by a bent portion.
The double spiral pattern 320 has redundant length-adjusting portions 324 and 325 of the double spiral pattern 320 at the ends of one spiral pattern 321 and the other spiral pattern 322, respectively. The length adjustment redundant portions 324 and 325 are configured by bending and folding back the end portions of the one spiral pattern 321 and the other spiral pattern 322. The length adjustment redundant portion 324 provided in one of the spiral patterns 321 and the length adjustment redundant portion 325 provided in the other of the spiral patterns 322 are located on opposite sides of each other in the radial direction of the double spiral pattern 320. The length adjustment redundant portions 324 and 325 each include no linear extending portion and are constituted only by a bent portion.
The double spiral pattern 320 is connected to the conductive layer 20 constituting the wiring at the redundant length adjustment portions 324 and 325. By changing the connection position between the redundant length adjustment portions 324 and 325 and the conductive layer 20, the resistance values of the first magnetoresistive elements 320a and 320b can be adjusted.
As shown in fig. 11, the double spiral patterns 320 of the first magnetoresistive element 320a and the first magnetoresistive element 320b have different circumferential directions, so that the S-shaped patterns 323 have different directions from each other.
In the present embodiment, the orientations of the double spiral patterns 320 of the first magnetoresistive element 320a and the first magnetoresistive element 320b in the circumferential direction are different by 90 °, so that the orientations of the S-shaped patterns 323 are different by 90 °.
In addition, the double spiral pattern 320 may be wound in the opposite direction, and in this case, the center portion of the double spiral pattern 320 is formed of an inverted S-shaped pattern formed only by a bent portion. That is, one spiral pattern 321 and the other spiral pattern 322 are connected by an inverted S-shaped pattern.
As shown in fig. 11, when viewed from a direction orthogonal to the insulating layer 30, the second magnetoresistive elements 330a and 330b are located outside the outer peripheries of the first magnetoresistive elements 320a and 320 b. The second magnetoresistive elements 330a and 330b have a pattern shape having a plurality of curved portions and folded back.
In the magnetic sensor 3 according to the present embodiment, two first magnetic members 40 and two second magnetic members 50 are disposed on the insulating layer 30. The thickness of each of the first magnetic member 40 and the second magnetic member 50 is, for example, 10 μm or more, preferably 20 μm or more and 150 μm or less. Although the thicknesses may be different from each other, when the thicknesses are the same, the two first magnetic members 40 and the two second magnetic members 50 can be formed in the same step, and the two first magnetic members 40 and the two second magnetic members 50 can be easily formed.
As shown in fig. 11, the first magnetic member 40 has a circular outer shape when viewed in a direction orthogonal to the insulating layer 30, and is located in a region inside the outer peripheral edges of the first magnetoresistive elements 320a and 320 b. In the present embodiment, the first magnetic member 40 is located concentrically with the outer peripheries of the first magnetoresistive elements 320a and 320b when viewed from the direction orthogonal to the insulating layer 30.
In the present embodiment, the first magnetic member 40 covers only the central portions of the first magnetoresistive elements 320a and 320b and the second magnetoresistive elements 330a and 330b, as viewed from the direction orthogonal to the insulating layer 30. Therefore, the first magnetic member 40 is surrounded by the outer peripheries of the first magnetoresistive elements 320a and 320b when viewed from the direction orthogonal to the insulating layer 30.
The second magnetic member 50 covers only the second magnetoresistive elements 330a, 330b of the first magnetoresistive elements 320a, 320b and the second magnetoresistive elements 330a, 330b, as viewed from the direction orthogonal to the insulating layer 30. Preferably, the second magnetoresistive elements 330a and 330b are located in a region from the center of the second magnetic member 50 to a position spaced inward by 7 μm from the outer peripheral edge of the second magnetic member 50, as viewed in the direction orthogonal to the insulating layer 30.
The second magnetic member 50 is made of a magnetic material having a high magnetic permeability and a high saturation magnetic flux density, such as electromagnetic steel, soft iron steel, silicon steel, permalloy, super permalloy, nickel alloy, iron alloy, or ferrite. These magnetic materials preferably have a low coercive force.
In the magnetic sensor 3 according to the present embodiment, as shown in fig. 11 and 12, the double spiral pattern 320 of the first magnetoresistive elements 320a and 320b includes: the first pattern part 320T is located in a region T sandwiched between the first magnetic members 40 arranged adjacent to each other in the Y-axis direction when viewed from the direction orthogonal to the insulating layer 301And a region T sandwiched between the first magnetic member 40 and the second magnetic member 50 arranged adjacently in the X-axis direction2And a region T sandwiched by the first magnetic member 40 and the second magnetic member 50 adjacently arranged in the substantially Y-axis direction3The respective interiors; and a second pattern part 320S located in the region T1～T3Of the outer part of (1). In the above-mentioned region T1～T3In the magnetic circuit, the magnetic flux density can be maintained high even if the first magnetic member 40 and the second magnetic member 50 are separated from each other, as compared with other regions not sandwiched between the magnetic members.
The first pattern portion 320T and the second pattern portion 320S each have a different pattern shape from each other, so that the detection sensitivity in the first magnetoresistive elements 320a, 320b is equalized as compared with the case where the first pattern portion 320T and the second pattern portion 320S each have the same pattern shape as each other.
In the present embodiment, the line widths of the patterns of the first pattern part 320T and the second pattern part 320S are different from each other. Specifically, the line width of the first pattern part 320T is wider than that of the second pattern part 320S. As a result, the first pattern portion 320T has a low detection sensitivity to the horizontal magnetic field in the X-axis direction and the Y-axis direction, and therefore the detection sensitivity of the first magnetoresistive elements 320a and 320b is equalized.
Although in the present embodiment, in the above-described region T1～T3Although the line width of the first pattern portion 320T is similarly changed, the present invention is not limited to this embodiment, and the region T may be formed1～T3The line widths of the first pattern portions 320T are made different from each other.
When a horizontal magnetic field in the Y-axis direction is applied, the magnetic field is present in a region T sandwiched between adjacent first magnetic members 401Is located in the region T when the magnetic flux density of (A) is lower than that of the other region not sandwiched between the magnetic members1The line width of the first pattern portion 320T is narrower than the line width of the second pattern portion 320S.
When a horizontal magnetic field in the X-axis direction is applied, the magnetic field is in a region T sandwiched between the adjacent first and second magnetic members 40 and 502Is located in the region T when the magnetic flux density of (A) is lower than that of the other region not sandwiched between the magnetic members2The line width of the first pattern portion 320T is narrower than the line width of the second pattern portion 320S.
When a horizontal magnetic field in the Y-axis direction is applied, the magnetic field is in a region T sandwiched between the adjacent first and second magnetic members 40 and 503Is located in the region T when the magnetic flux density of (A) is lower than that of the other region not sandwiched between the magnetic members3The line width of the first pattern portion 320T is narrower than the line width of the second pattern portion 320S.
According to at least one of the three aspects described above, since the first pattern portion 320T has a high detection sensitivity to the horizontal magnetic field in the X-axis direction or the Y-axis direction, the detection sensitivity of the first magnetoresistive elements 320a and 320b is equalized.
As described above, the magnetic sensor 3 according to the present embodiment can suppress the variation in the detection sensitivity of the magnetic sensor 3 according to the direction of the magnetic field to be measured, which is generated by the first magnetic member 40 and the second magnetic member 50 that gather the magnetic field to be measured.
In the present embodiment, the line width of the first pattern portion 320T is changed in a uniform manner, but the present invention is not limited to this, and for example, the line width of the first pattern portion 320T may be changed intermittently, or the line width of the first pattern portion 320T may be changed gradually.
(embodiment mode 4)
Hereinafter, a magnetic sensor according to embodiment 4 of the present invention will be described with reference to the drawings. The magnetic sensor according to embodiment 4 of the present invention is different from the magnetic sensor 1 according to embodiment 1 of the present invention mainly in the pattern included in the first magnetoresistive element and the second magnetoresistive element and in that the first magnetic member is not included, and therefore, the same configuration as that of the magnetic sensor 1 according to embodiment 1 of the present invention will not be described again.
Fig. 13 is a plan view showing the structure of a magnetic sensor according to embodiment 4 of the present invention. As shown in fig. 13, the magnetic sensor 4 according to embodiment 4 of the present invention includes a circuit board 400 and two second magnetic members 50 provided on the circuit board 400.
The magnetic sensor 4 includes a first magnetoresistive element 420a and a second magnetoresistive element 430a and a first magnetoresistive element 420b and a second magnetoresistive element 430 b. The first magnetoresistive elements 420a and 420b and the second magnetoresistive elements 430a and 430b are each formed in a zigzag shape in which a long rectangular pattern and a short rectangular pattern are alternately connected. The shape of the magnetoresistive element is not limited to a meander shape.
In each of the first magnetoresistive elements 420a and 420b, a long rectangular pattern extends along the X direction. Each of the first magnetoresistive elements 420a and 420b has a minimum resistance value when a magnetic field in the Y direction is applied.
In each of the second magnetoresistive elements 430a and 430b, a long rectangular pattern extends along the Y direction. Each of the second magnetoresistive elements 430a and 430b has a minimum resistance value when a magnetic field in the X direction is applied thereto.
As shown in fig. 13, the first magnetoresistive element 420a is located at the lower left of the semiconductor substrate 110, the first magnetoresistive element 420b is located at the upper right of the semiconductor substrate 110, the second magnetoresistive element 430a is located at the upper left of the semiconductor substrate 110, and the second magnetoresistive element 430b is located at the lower right of the semiconductor substrate 110.
In the magnetic sensor 4 according to the present embodiment, two second magnetic members 50 are arranged on the insulating layer 30 in a direction inclined by 45 ° in each of the X-axis direction and the Y-axis direction. The second magnetic member 50 is formed to cover the entirety of each of the second magnetoresistive elements 430a and 430 b. The second magnetic member 50 covering a portion of the second magnetoresistive element 430a is rectangular when viewed from a direction orthogonal to the insulating layer 30. The second magnetic member 50 covering a portion of the second magnetoresistive element 430b is rectangular when viewed from a direction orthogonal to the insulating layer 30.
The position of forming the second magnetic member 50 is not limited to the above position, and at least a part of the second magnetoresistive elements 430a and 430b may be covered when viewed from the direction perpendicular to the insulating layer 30. The second magnetoresistive elements 430a and 430b may be covered with at least a part of at least two second magnetic members 50 when viewed from a direction orthogonal to the insulating layer 30.
In the magnetic sensor 4 according to the present embodiment, as shown in fig. 13, the pattern of the first magnetoresistive elements 420a and 420b includes: a first pattern part 420T located inside a region T sandwiched between the second magnetic members 50 arranged adjacent to each other when viewed from a direction orthogonal to the insulating layer 30; and a second pattern part 420S located outside the region T.
In the present embodiment, the region T between the second magnetic members 50 disposed adjacent to each other is a region sandwiched between two imaginary straight lines when the corners on two sides adjacent to each other of the two rectangular second magnetic members 50 are connected to each other by the imaginary straight lines.
The first pattern part 420T and the second pattern part 420S each have a different pattern shape from each other, so that the detection sensitivity in the first magnetoresistive elements 420a, 420b is equalized as compared with the case where the first pattern part 420T and the second pattern part 420S each have the same pattern shape as each other.
In the present embodiment, in the rectangular pattern extending in the X direction in the respective patterns of the first magnetoresistive elements 420a and 420b, the line width of the pattern gradually increases as it goes from the second pattern portion 420S side to the first pattern portion 420T side. As a result, the detection sensitivity of the first pattern part 420T to the horizontal magnetic field in the directions inclined by 45 ° in each of the X-axis direction and the Y-axis direction is lowered, and therefore the detection sensitivity of the first magnetoresistive elements 420a and 420b is equalized.
When a horizontal magnetic field is applied in a direction inclined by 45 ° in each of the X-axis direction and the Y-axis direction, if the magnetic flux density in the region T sandwiched between the adjacent second magnetic members 50 is lower than that in the other regions located around the second magnetic members 50, the line width of the pattern of the first magnetoresistive elements 420a and 420b is gradually narrowed as the pattern proceeds from the second pattern portion 420S side to the first pattern portion 420T side in the rectangular pattern extending in the X direction. As a result, the detection sensitivity of the first pattern part 420T to the horizontal magnetic field in the direction inclined by 45 ° in each of the X-axis direction and the Y-axis direction increases, and therefore the detection sensitivity of the first magnetoresistive elements 420a and 420b is equalized.
As described above, the magnetic sensor 4 according to the present embodiment can suppress the variation in the detection sensitivity of the magnetic sensor 4 according to the direction of the magnetic field to be measured, which is generated by the second magnetic material member 50 that collects the magnetic field to be measured.
(embodiment 5)
The magnetic sensor according to embodiment 5 of the present invention will be described below with reference to the drawings. In addition, the magnetic sensor according to embodiment 5 of the present invention is mainly different from the magnetic sensor 4 according to embodiment 4 of the present invention in the pattern that the first magnetoresistive element has, and therefore, description thereof will not be repeated with respect to the same configuration as the magnetic sensor 4 according to embodiment 4 of the present invention.
Fig. 14 is a plan view showing the structure of a magnetic sensor according to embodiment 5 of the present invention. As shown in fig. 14, the magnetic sensor 5 according to embodiment 5 of the present invention includes a circuit board 500 and two second magnetic members 50 provided on the circuit board 500.
The magnetic sensor 5 includes a first magnetoresistive element 520a and a second magnetoresistive element 430a and a first magnetoresistive element 520b and a second magnetoresistive element 430 b. The first magnetoresistive elements 520a and 520b and the second magnetoresistive elements 430a and 430b are each formed in a zigzag shape in which a long rectangular pattern and a short rectangular pattern are alternately connected. The shape of the magnetoresistive element is not limited to a meander shape.
In each of the first magnetoresistive elements 520a and 520b, a long rectangular pattern extends along the X direction. Each of the first magnetoresistive elements 520a and 520b has a minimum resistance value when a magnetic field in the Y direction is applied thereto.
As shown in fig. 14, the first magnetoresistive element 520a is located at the lower left of the semiconductor substrate 110, the first magnetoresistive element 520b is located at the upper right of the semiconductor substrate 110, the second magnetoresistive element 430a is located at the upper left of the semiconductor substrate 110, and the second magnetoresistive element 430b is located at the lower right of the semiconductor substrate 110.
In the magnetic sensor 5 according to the present embodiment, as shown in fig. 14, the pattern of the first magnetoresistive elements 520a and 520b includes: a first pattern portion 520T located inside a region T sandwiched between the second magnetic members 50 arranged adjacent to each other when viewed from a direction orthogonal to the insulating layer 30; and a second pattern part 520S located outside the region T.
The first pattern part 520T and the second pattern part 520S each have a different pattern shape from each other, so that the detection sensitivity in the first magnetoresistive elements 520a, 520b is equalized as compared with the case where the first pattern part 520T and the second pattern part 520S each have the same pattern shape as each other.
In the present embodiment, the line widths of the patterns of the first pattern portion 520T and the second pattern portion 520S are different from each other in the rectangular pattern extending in the X direction in the respective patterns of the first magnetoresistive elements 520a and 520 b. Specifically, in the rectangular pattern extending along the X direction, the line width of the first pattern portion 520T is wider than the line width of the second pattern portion 520S. In addition, the line width of the first pattern portion 520T in the rectangular pattern extending in the X direction becomes wider as it goes away from the second pattern portion 520S side.
Accordingly, the detection sensitivity of the first pattern portion 520T to the horizontal magnetic field in the directions inclined by 45 ° in each of the X-axis direction and the Y-axis direction is lowered, and therefore the detection sensitivity of the first magnetoresistive elements 520a and 520b is equalized.
When a horizontal magnetic field in a direction inclined by 45 ° in each of the X-axis direction and the Y-axis direction is applied, if the magnetic flux density in the region T sandwiched between the adjacent second magnetic members 50 is lower than that in the other regions located around the second magnetic members 50, the line width of the first pattern portion 520T is made narrower than the line width of the second pattern portion 520S in the rectangular pattern extending in the X direction in the pattern of each of the first magnetoresistive elements 520a and 520 b.
As a result, the detection sensitivity of the first pattern portion 520T to the horizontal magnetic field in the direction inclined by 45 ° in each of the X-axis direction and the Y-axis direction increases, and therefore the detection sensitivity of the first magnetoresistive elements 520a and 520b is equalized.
As described above, the magnetic sensor 5 according to the present embodiment can suppress the variation in the detection sensitivity of the magnetic sensor 5 according to the direction of the magnetic field to be measured, which is generated by the second magnetic material member 50 that collects the magnetic field to be measured.
In the present embodiment, the line width of the first pattern portion 520T is gradually changed in the rectangular pattern extending in the X direction, but the present invention is not limited to this embodiment, and for example, the line width of the first pattern portion 520T may be changed intermittently, or the line width of the first pattern portion 520T may be changed uniformly.
In the above description of the embodiments, combinable configurations may be combined with each other. In the above-described embodiment, the number of the first magnetic members or the total of the number of the first magnetic members and the number of the second magnetic members may be two or more.
The embodiments disclosed herein are to be considered in all respects as illustrative and not restrictive. The scope of the present invention is defined by the claims, not by the above description, and is intended to include all modifications within the meaning and scope equivalent to the claims.
Description of the reference numerals
1.2, 3, 4, 5: magnetic sensor, 10: magnetic bodyLayer, 20: conductive layer, 30: insulating layer, 40: first magnetic body member, 50: second magnetic member, 100, 200, 300, 400, 500: circuit board, 110: semiconductor substrate, 120, 220: pattern, 120S, 220S, 320S, 420S, 520S: second pattern portion, 120T, 220T, 320T, 420T, 520T: first pattern portions 120a, 120b, 220a, 220b, 320a, 320b, 420a, 420b, 520a, 520 b: first magnetoresistive element, 121, 133, 323: c-shaped pattern, 122, 123: semi-arc pattern, 130, 320: double vortex pattern, 130a, 130b, 330a, 330b, 430a, 430 b: second magnetoresistive element, 131, 132, 321, 322: swirl pattern, 140, 141: midpoint, 145, 146, 148, 149, 150, 152: wiring, 160: differential amplifier, 161: temperature compensation circuit, 162: switching circuit, 163: driver, 324, 325: redundant length section for length adjustment, C1: imaginary circle, C11: a C-shaped.

Claims (6)

1. A magnetic sensor is provided with:
a first magnetoresistive element;
a second magnetoresistive element electrically connected to the first magnetoresistive element to form a bridge circuit;
an insulating layer covering the first magnetoresistive element and the second magnetoresistive element; and
at least the first magnetic member of a first magnetic member and a second magnetic member different from the first magnetic member is located on the insulating layer,
the first magnetoresistive element has at least the outer one of an outer periphery and an inner periphery,
the first magnetic member is located in a region located more inward than the outer peripheral edge of the first magnetoresistive element when viewed from a direction orthogonal to the insulating layer,
the second magnetoresistive element is covered with the first magnetic member in a region located inward of the inner peripheral edge of the first magnetoresistive element or covered with the second magnetic member in a region located outward of the outer peripheral edge of the first magnetoresistive element when viewed from a direction orthogonal to the insulating layer,
the number of the first magnetic members or the total number of the first magnetic members and the second magnetic members is two or more,
the first magnetoresistive element includes: a first pattern section located inside a region sandwiched between the magnetic members disposed adjacent to each other, of the first magnetic member and the second magnetic member, when viewed from a direction orthogonal to the insulating layer; and a second pattern part located outside the region,
the first pattern portion and the second pattern portion each have a pattern shape different from each other, so that detection sensitivity in the first magnetoresistive element is equalized as compared with a case where the first pattern portion and the second pattern portion each have a pattern shape identical to each other.
2. A magnetic sensor is provided with:
a first magnetoresistive element;
a second magnetoresistive element electrically connected to the first magnetoresistive element to form a bridge circuit;
an insulating layer covering the first magnetoresistive element and the second magnetoresistive element; and
two or more first magnetic members on the insulating layer,
the first magnetoresistive element has an outer periphery and an inner periphery,
the first magnetic member is located in a region located more inward than the outer peripheral edge of the first magnetoresistive element when viewed from a direction orthogonal to the insulating layer,
the second magnetoresistive element is located in a region inside the inner peripheral edge of the first magnetoresistive element when viewed from a direction orthogonal to the insulating layer and is covered with the first magnetic member,
the first magnetoresistive element includes: a first pattern section located inside a region sandwiched between the first magnetic members disposed adjacent to each other, when viewed from a direction orthogonal to the insulating layer; and a second pattern part located outside the region,
the first pattern portion and the second pattern portion have different pattern shapes.
3. A magnetic sensor is provided with:
a first magnetoresistive element;
a second magnetoresistive element electrically connected to the first magnetoresistive element to form a bridge circuit;
an insulating layer covering the first magnetoresistive element and the second magnetoresistive element; and
at least one first magnetic member and at least one second magnetic member on the insulating layer,
the first magneto-resistive element has an outer periphery,
the first magnetic member is located in a region located more inward than the outer peripheral edge of the first magnetoresistive element when viewed from a direction orthogonal to the insulating layer,
the second magnetoresistive element is located in a region outside the outer peripheral edge of the first magnetoresistive element and is covered with the second magnetic member,
the first magnetoresistive element includes: a first pattern section located inside a region sandwiched between the magnetic members disposed adjacent to each other, of the first magnetic member and the second magnetic member, when viewed from a direction orthogonal to the insulating layer; and a second pattern part located outside the region,
the first pattern portion and the second pattern portion have different pattern shapes.
4. A magnetic sensor is provided with:
a first magnetoresistive element;
a second magnetoresistive element electrically connected to the first magnetoresistive element to form a bridge circuit;
an insulating layer covering the first magnetoresistive element and the second magnetoresistive element; and
at least two magnetic members on the insulating layer,
the second magnetoresistive element is covered with at least a part of the at least two magnetic body members when viewed from a direction orthogonal to the insulating layer,
the first magnetoresistive element includes: a first pattern section located inside a region sandwiched between magnetic members arranged adjacent to each other among the at least two magnetic members, when viewed from a direction orthogonal to the insulating layer; and a second pattern part located outside the region,
the first pattern portion and the second pattern portion each have a pattern shape different from each other, so that detection sensitivity in the first magnetoresistive element is equalized as compared with a case where the first pattern portion and the second pattern portion each have a pattern shape identical to each other.
5. A magnetic sensor according to any one of claim 1 to claim 4,
the line widths of the patterns of the first pattern part and the second pattern part are different from each other.
6. A magnetic sensor according to any one of claim 1 to claim 4,
the first pattern part and the second pattern part have different numbers of patterns.
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