WO2019098363A1 - 被覆切削工具 - Google Patents
被覆切削工具 Download PDFInfo
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- WO2019098363A1 WO2019098363A1 PCT/JP2018/042653 JP2018042653W WO2019098363A1 WO 2019098363 A1 WO2019098363 A1 WO 2019098363A1 JP 2018042653 W JP2018042653 W JP 2018042653W WO 2019098363 A1 WO2019098363 A1 WO 2019098363A1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/40—Coatings including alternating layers following a pattern, a periodic or defined repetition
- C23C28/42—Coatings including alternating layers following a pattern, a periodic or defined repetition characterized by the composition of the alternating layers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23B—TURNING; BORING
- B23B27/00—Tools for turning or boring machines; Tools of a similar kind in general; Accessories therefor
- B23B27/14—Cutting tools of which the bits or tips or cutting inserts are of special material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23B—TURNING; BORING
- B23B27/00—Tools for turning or boring machines; Tools of a similar kind in general; Accessories therefor
- B23B27/14—Cutting tools of which the bits or tips or cutting inserts are of special material
- B23B27/148—Composition of the cutting inserts
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23C—MILLING
- B23C5/00—Milling-cutters
- B23C5/16—Milling-cutters characterised by physical features other than shape
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0664—Carbonitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
- C23C28/042—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
- C23C28/044—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material coatings specially adapted for cutting tools or wear applications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
- C23C30/005—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process on hard metal substrates
Definitions
- the present invention relates to a coated cutting tool.
- Priority is claimed on Japanese Patent Application No. 2017-223099, filed Nov. 20, 2017, the content of which is incorporated herein by reference.
- Patent Document 1 proposes a coated cutting tool coated with TiSiN in which Si 3 N 4 and Si exist as independent phases in a compound phase.
- Patent Document 2 proposes a coated cutting tool coated with TiSiN in which fine crystals and an amorphous part are mixed in a microstructure.
- Patent Documents 3 and 4 disclose a coated cutting tool provided with a laminated film alternately laminated with a film thickness of nano level between a substrate and TiSiN.
- the coated cutting tool provided with a hard coating having a high hardness in the upper layer of the laminated coating which has been conventionally proposed, has a large load of tools such as high efficiency machining of high hardness steel of HRC 50 or more. Under severe operating conditions, tool damage may be significant, and it has been confirmed that there is room for improvement in durability.
- One aspect of the present invention is A substrate, and a hard film formed on the substrate;
- the hard film is a nitride or carbonitride b layer disposed on the substrate;
- the content ratio of aluminum (Al) is 55 atomic% or more to the total amount of metal (including metalloid) elements, and the content ratio of chromium (Cr) is larger than the total amount of metal (including metalloid) elements, and at least silicon (Si)
- the c layer has a face-centered cubic lattice structure of Al
- the c1 layer contains 55 atomic% or more of aluminum (Al), 20 atomic% or more of chromium (Cr), and 1 atomic% or more of silicon (Si) based on the total amount of metal (including metalloid) elements.
- the c2 layer contains 55 atomic% or more of aluminum (Al) and 20 atomic% of titanium (Ti) with respect to the total amount of metal (including metalloid) elements. It is preferable that it is the nitride or carbonitride which contains the above.
- the said c layer satisfy
- fills the relationship of Ihx100 / Is 0.
- the c layer is preferably the thickest film relative to the total film thickness of the hard film.
- the c layer is preferably composed of columnar particles, and the average width of the columnar particles is preferably 90 nm or less.
- the d layer is a nitride or carbonitride containing 70 atomic% or more of titanium (Ti) and 5 atomic% or more of silicon (Si) based on the total amount of metal (including metalloid) elements. Is preferred.
- the c2 layer may contain an element of group 4a, 5a or 6a of the periodic table, and one or more elements selected from Si, B and Y.
- the nanobeam diffraction pattern may be indexed to the crystal structure of WC and have an a layer with a thickness of 1 nm or more and 10 nm or less between the base material and the b layer.
- a coated cutting tool excellent in durability can be provided.
- FIG. 1 is a view showing a cross-sectional structure of a coated cutting tool according to an embodiment.
- FIG. 2 is an example of a cross-sectional TEM image ( ⁇ 300,000 ⁇ ) in the laminated film of the first embodiment.
- FIG. 3 is an example of a cross-sectional dark-field STEM image ( ⁇ 1,800,000 ⁇ ) in the multilayer film of the first embodiment.
- FIG. 4 is an example of the limited field diffraction pattern in the laminated film of the first embodiment.
- FIG. 5 is an example of the intensity profile obtained from the limited field diffraction pattern of FIG.
- FIG. 6 is an example of the limited field diffraction pattern in the laminated film of Comparative Example 1.
- FIG. 7 is an example of the intensity profile obtained from the limited field diffraction pattern of FIG.
- the present inventor examined a method for improving the tool life of a coated cutting tool in which a hard coating such as TiSiN is provided on the upper layer of the laminated coating.
- the inventors of the present invention have found that hcp contained in the microstructure of a laminated film in which Al-rich AlCrN nitrides or carbonitrides and Al-rich AlTiN nitrides or carbonitrides are alternately laminated at the nano level.
- AlN Al-rich AlCrN nitrides or carbonitrides and Al-rich AlTiN nitrides or carbonitrides are alternately laminated at the nano level.
- the coated cutting tool of the present embodiment has, for example, a cross-sectional structure shown in FIG.
- the coated cutting tool of the present embodiment has a substrate and a hard film formed on the substrate.
- the hard coating is a hard coating having higher hardness than the a layer, the b layer of nitride or carbonitride, the c layer of a laminated coating, and other layers, provided in order from the substrate side, as necessary. And d). Each layer will be described in detail below.
- the substrate is not particularly limited, but it is preferable to use a WC—Co-based cemented carbide excellent in strength and toughness as the substrate.
- the b layer according to the present embodiment is a nitride or carbonitride disposed on the substrate.
- the b layer is an underlayer that enhances the adhesion between the substrate and the c layer which is a laminated film.
- the coated cutting tool with excellent adhesion between the substrate and the hard film can be obtained.
- the b layer preferably contains Al in an amount of 55 atomic% or more based on the total amount of metals (including semimetals, hereinafter the same).
- Al of the b layer is preferably 60 atomic% or more.
- the composition difference with the c-layer comprising an Al-rich laminated film described later is reduced, and the adhesion is improved. Further, by making the b layer Al-rich, the heat resistance is enhanced in the entire hard coating. Furthermore, it is preferable that b layer is the nitride which is excellent in heat resistance and abrasion resistance. However, when the content ratio of Al in the b layer becomes too large, the number of fragile hcp structured AlN increases. Therefore, the Al content of the b layer is preferably 75 atomic% or less.
- the b layer preferably contains a metal element contained in the c1 layer or the c2 layer described later.
- the b layer has the maximum peak intensity attributable to the fcc structure.
- the film thickness of the b layer is preferably 0.1 ⁇ m or more and 5.0 ⁇ m or less. Furthermore, as for the film thickness of b layer, 0.2 micrometer or more is preferable. Furthermore, as for the film thickness of b layer, 3.0 micrometers or less are preferable. The upper limit value and the lower limit value of the film thickness of the b layer can be appropriately combined.
- the c layer according to the present embodiment is an Al-rich laminated film provided between the b layer which is the above-described underlayer and the high-hardness d layer described later.
- the c layer has a high content ratio of aluminum (Al) 55 atomic% or more to the total amount of metal (including metalloid) elements, and then chromium (Cr), and further, at least silicon (Si) ) Containing at least 55 atomic% of aluminum (Al) and then titanium (Ti) with respect to the total amount of metal (including metalloid) elements and the c1 layer of nitride or carbonitride containing
- it is a laminated film in which a c2 layer of carbonitride is alternately laminated with a film thickness of 50 nm or less.
- the c layer is a nitride containing 55 atomic% or more of aluminum (Al), 20 atomic% or more of chromium (Cr), and 1 atomic% or more of silicon (Si) based on the total amount of metal elements.
- the average composition of the c layer is preferably such that the content ratio of Al is 55 atomic% or more and 75 atomic% or less. Furthermore, as for the average composition of the c layer, the content ratio of Al is preferably 60 atomic% or more and 70 atomic% or less.
- the average composition of the c layer is preferably such that the total content of Cr and Ti is 20 atomic% or more and 40 atomic% or less.
- the average composition of the c layer is preferably such that the content ratio of Si is 0.5 atomic% or more and 5 atomic% or less.
- the content ratio of Si is preferably 1 atomic% or more and 3 atomic% or less.
- the average composition of the c layer may be calculated by measuring a range of 500 nm ⁇ 500 nm or more.
- the c layer is required to have a small amount of hcp structured AlN contained in the microstructure.
- the microstructure may contain AlN of fragile hcp structure. Then, the inventors confirmed that the durability of the coated cutting tool is improved by reducing the fragile hcp structure AlN contained in the microstructure of the c layer.
- the limiting field diffraction pattern is obtained using a transmission electron microscope for the processed cross section of the hard coating, and it can be obtained from the limiting field diffraction pattern Use an intensity profile. Specifically, in the intensity profile of the limited field diffraction pattern of the transmission electron microscope, the relationship of Ih ⁇ 100 / Is is evaluated. Ih and Is are defined as follows.
- Ih Peak intensity attributable to (010) plane of AlN of hcp structure.
- Is fcc structure, AlN (111), TiN (111), CrN (111), AlN (200), TiN (200), CrN (200), AlN Peak strength due to (220) plane, (220) plane of TiN, and (220) plane of CrN, and (010) plane of AlN, (011) plane of AlN, and (110) of AlN with hcp structure The sum of the peak intensity attributable to the surface.
- Ih and Is By evaluating the relationship between Ih and Is, it is possible to quantitatively evaluate AlN of hcp structure included in the microstructure in a hard film in which the peak intensity due to AlN of hcp structure is not confirmed by X-ray diffraction .
- a smaller value of Ih ⁇ 100 / Is means that less fragile hcp structured AlN is present in the microstructure of the c layer.
- the inventors of the present invention have confirmed that when the value of Ih ⁇ 100 / Is in the c layer is larger than 15, the durability of the coated cutting tool is likely to be reduced in a severe use environment.
- the coated cutting tool having good durability is realized by the configuration in which the c layer satisfies Ih ⁇ 100 / Is ⁇ 15. Furthermore, in the coated cutting tool of the present embodiment, the c layer preferably satisfies Ih ⁇ 100 / Is ⁇ 10. Furthermore, in the coated cutting tool according to the present embodiment, the c layer preferably satisfies Ih ⁇ 100 / Is ⁇ 5. Furthermore, it is preferable that the coated cutting tool of the present embodiment has a configuration in which the peak strength attributable to the (010) plane of the hcp structured AlN is not confirmed in the c layer.
- the microstructure of the c layer is composed of fine columnar particles.
- Columnar particles constituting the c layer extend along the film thickness direction (lamination direction) of the laminated film.
- the hardness and toughness of the hard coating tend to be increased by forming the c layer from fine columnar particles.
- the average width of the columnar particles in the c layer is preferably 90 nm or less.
- the average width of the columnar particles in the c layer is preferably 30 nm or more.
- the width of the columnar particles can be confirmed by a cross-sectional observation image using a transmission electron microscope.
- the average width of the columnar particles is calculated as an average value of the widths of ten or more columnar particles confirmed by the cross-sectional observation image.
- the c1 layer is a nitride containing at least 55 atomic% of aluminum (Al), then chromium (Cr) and further containing at least silicon (Si) with respect to the total amount of metal (including metalloid) elements. Or carbonitrides. Furthermore, the c1 layer is a nitride containing 55 atomic% or more of aluminum (Al), 20 atomic% or more of chromium (Cr), and 1 atomic% or more of silicon (Si) based on the total amount of metal elements. Or it is preferable that it is carbonitride. A nitride or carbonitride based on Al and Cr is a film type excellent in heat resistance.
- the c1 layer is preferably a nitride excellent in heat resistance and abrasion resistance.
- the c1 layer contains 55 atomic% or more of Al.
- the Al content of the c1 layer is preferably 60 atomic% or more.
- the Al content of the c1 layer is preferably 75 at% or less, more preferably 70 at% or less.
- the nitrides or carbonitrides based on Al and Cr have lower wear resistance if the content ratio of Cr is too small.
- the c1 layer preferably contains Cr at 20 atomic% or more.
- the c1 layer contains a large amount of Cr next to Al in order to form an AlCr-based nitride or carbonitride.
- the Cr content of the c1 layer is preferably 40 at% or less, more preferably 35 at% or less.
- the c1 layer preferably has a total content ratio of Al and Cr of 85 atomic% or more in order to further improve the heat resistance and the wear resistance of the laminated film.
- the film structure becomes fine and the wear resistance and the heat resistance are further improved. Therefore, when the c1 layer contains Si, the entire abrasion resistance and heat resistance of the laminated film are improved. In addition, since the hardness of the laminated film forming the c layer is improved, the difference in hardness with the highly hard d layer provided on the laminated film is reduced, and the adhesion is enhanced. In order to exhibit these effects, the c1 layer preferably contains Si at 1 atomic% or more. However, when the content ratio of Si becomes too large, the AlN and the amorphous phase of the hcp structure contained in the microstructure increase, and the durability decreases. Therefore, the Si content of the c1 layer is preferably 5 atomic% or less, more preferably 3 atomic% or less.
- the c1 layer and the c2 layer are alternately stacked at the nano level, their compositions mix with each other at the time of coating. Also, their compositions may diffuse. Therefore, the c1 layer may contain Ti which is essential to the c2 layer. However, in order to laminate an Al-rich AlCrN hard film and an Al-rich AlTiN hard film different in composition system, the content ratio of Ti in the c1 layer is made smaller than the content ratio of Ti in the c2 layer.
- the c1 layer can contain metal elements other than Al, Cr and Si.
- the c1 layer is, for example, one or more elements selected from Group 4a, Group 5a, Group 6a elements and B, Y for the purpose of improving the abrasion resistance, heat resistance, lubricity, etc. of the hard coating. It can contain two or more elements. These elements are elements generally added to AlTiN-based and AlCrN-based hard coatings to improve the properties of hard coatings, and if the content ratio is not excessive, the durability of the coated cutting tool is Does not significantly reduce However, if the c1 layer contains a large amount of metal elements other than Al, Cr and Si, the basic properties of the AlCrN hard coating are impaired, and the durability of the coated cutting tool is lowered. Therefore, in the c1 layer, the total of Al, Cr, and metal elements other than Si is preferably 25 atomic% or less, more preferably 20 atomic% or less, and further preferably 15 atomic% or less.
- the c2 layer is a nitride or carbonitride containing 55 atomic% or more of aluminum (Al) and then titanium (Ti) with respect to the total amount of metal (including metalloid) elements. Furthermore, the c2 layer is preferably a nitride or carbonitride containing 55 atomic% or more of aluminum (Al) and 20 atomic% or more of titanium (Ti) based on the total amount of metal elements.
- Nitride or carbonitride mainly composed of Al and Ti is a film type excellent in wear resistance and heat resistance. In particular, when the content ratio of Al increases, the heat resistance of the hard film tends to be improved, and the durability of the coated cutting tool is improved.
- the c2 layer contains Al at 55 atomic% or more. Furthermore, Al of the c2 layer is preferably 60 atomic% or more. However, if the content ratio of Al becomes too large, the amount of AlN in the hcp structure increases, so the durability of the hard film decreases. Therefore, the content ratio of Al in the c2 layer is preferably 75 atomic% or less, more preferably 70 atomic% or less.
- the c2 layer preferably contains Ti at 20 atomic% or more.
- the c2 layer contains a large amount of Ti next to Al in order to form an AlTi-based nitride or carbonitride.
- the content ratio of Ti in the c2 layer is preferably 40 at% or less, more preferably 35 at% or less.
- the c2 layer preferably has a total content ratio of Al and Ti of 80 atomic% or more in order to further improve the heat resistance and the wear resistance of the laminated film.
- the c1 layer and the c2 layer are alternately stacked at the nano level, their compositions mix with each other at the time of coating. Also, their compositions may diffuse. Therefore, the c2 layer can contain Cr and Si which are essential and contained in the c1 layer. However, in order to laminate an Al-rich AlCrN hard film and an Al-rich AlTiN hard film different in composition system, the Cr content of the c2 layer is made smaller than the Cr content of the c2 layer. In addition, Si with a small content ratio in the c1 layer may not be contained in the c2 layer.
- the c2 layer can contain metal elements other than Al and Ti.
- the c2 layer is selected from, for example, elements of group 4a, 5a, and 6a of the periodic table and Si, B, and Y for the purpose of improving the abrasion resistance, heat resistance, lubricity and the like of the hard coating. It can contain a species or two or more elements. These elements are elements generally added to AlTiN-based and AlCrN-based hard coatings to improve the properties of hard coatings, and if the content ratio is not excessive, the durability of the coated cutting tool is Does not significantly reduce In particular, when the hard film of AlTiN series contains the element of W (tungsten), the durability tends to be excellent in a more severe use environment, which is preferable.
- W tungsten
- the total of Al and metal elements other than Ti is preferably 25 atomic% or less, more preferably 20 atomic% or less, and further preferably 15 atomic% or less.
- the hard layer of the same composition as that of the layer b is thicker at the portion on the side b of the c layer.
- the c1 layer is preferably thicker than the c2 layer in the portion on the b layer side of the c layer.
- the c2 layer is preferably thicker than the c1 layer in the portion on the b layer side of the c layer.
- the c layer is preferably the thickest film relative to the total film thickness of the hard film. Since the c layer is the main layer of the hard coating, the adhesion and the wear resistance are both achieved at a high level, and the durability of the coated cutting tool is improved.
- the optimum film thickness of each layer varies depending on the type of tool, tool diameter, material to be cut, etc., and it is easy to realize excellent durability because the c layer is the thickest film.
- the film thickness ratio of the c layer is preferably 50% or more, more preferably 60% or more, and further preferably 70% or more.
- the film thickness ratio of the c layer is preferably 90% or less, and more preferably 85% or less.
- the thickness ratio of the b layer is preferably 5% or more.
- the thickness ratio of the d layer is preferably 10% or more.
- the film thickness of each of the c1 layer and the c2 layer is preferably 20 nm or less.
- the film thickness of each of the c1 layer and the c2 layer is preferably 2 nm or more.
- the film thickness of each of the c1 layer and the c2 layer is preferably 5 nm or more. The upper limit value and the lower limit value of the film thickness of the c1 layer and the c2 layer can be combined appropriately.
- the d layer according to the present embodiment is a high hardness layer provided on the upper layer of the c layer which is a laminated film and harder than the c layer.
- the hardness of the c layer is not particularly limited, but the nanoindentation hardness of the c layer is in the range of about 35 to 40 GPa.
- the film composition of the d layer is not particularly limited. In the present embodiment, setting the nanoindentation hardness of the d layer to 40 GPa or more is preferable because the durability of the coated cutting tool is further improved.
- a laminated film of d and c layers may be provided between the d and c layers.
- the d layer is preferably a nitride or carbonitride containing 70 atomic% or more of Ti and 5 atomic% or more of silicon (Si) in the content ratio of the metal element. Since the d layer is a hard film made of a TiSiN-based nitride, the nanoindentation hardness tends to be higher than 40 GPa. Furthermore, as for the nano indentation hardness of d layer, 42 GPa or more is preferable. Moreover, while the structure of a hard film becomes fine and a hard film becomes high hardness, the hard film of TiSiN type
- the durability of the coated cutting tool can be remarkably improved under a high load operating environment.
- the content ratio of Ti becomes too large, the content ratio of Si relatively decreases and the film structure becomes coarse, and a sufficient residual compressive stress can not be imparted to the hard film. Therefore, the content ratio of Ti in the d layer is preferably 95 atomic% or less.
- the content ratio of Si in the d layer is preferably 30 atomic% or less.
- the d layer preferably has a total content ratio of Ti and Si of 90 atomic% or more.
- the d layer is preferably a nitride excellent in heat resistance and wear resistance.
- another layer having a hardness lower than that of the d layer may be provided in the upper layer of the d layer.
- the film thickness of the d layer is preferably 0.1 ⁇ m or more and 5.0 ⁇ m or less. Furthermore, as for the film thickness of d layer, 0.2 micrometer or more is preferable. Furthermore, the film thickness of the d layer is preferably 3.0 ⁇ m or less. The upper limit value and the lower limit value of the film thickness of the d layer can be appropriately combined.
- b layer, c layer, and d layer of the hard film which concerns on a present Example are the nitrides which are excellent in heat resistance and abrasion resistance.
- the durability of the coated cutting tool is further improved.
- even a nitride contains minute oxygen and carbon. That is, the metal nitride has a peak intensity in which a metal element is bonded to oxygen or carbon in microanalysis.
- the hard coating according to the present embodiment may partially contain carbonitride or oxynitride as long as the nitride is the main component.
- the durability of the coated cutting tool is not significantly reduced.
- the content ratio of nitrogen be larger than that of carbon in order to further improve the heat resistance and the wear resistance of the hard film.
- the content ratio of carbon is preferably 20 atomic% or less, more preferably 10 atomic% or less with respect to the content ratio of nitrogen.
- the nanobeam diffraction pattern may have an a layer indexed to the crystal structure of WC between the base material and the underlayer b layer.
- the a layer is formed on the surface of the substrate by metal ion bombardment. Since the a layer is a layer formed by diffusion of the metal element used for metal ion bombardment, when using WC-Co based cemented carbide as a base material, the total amount of metal elements contains most W (tungsten) And then contain the metal element used for the metal ion bombardment. By having such an a layer, the adhesion between the substrate and the underlayer provided thereon tends to be significantly improved.
- the edge may be melted away by metal ion bombardment in a square end mill or a radius end mill in which the blade edge tends to have an acute angle, and the edge of the blade edge is easily broken. Therefore, it is preferable to provide the a layer on a ball end mill in which a sharp edge is not formed and in which a cutting edge is not easily broken by metal ion bombardment. If the thickness of the a layer is too thin or too thick, the effect of improving the adhesion can not be obtained. Therefore, the film thickness of the a layer is preferably 1 nm or more and 10 nm or less.
- the a layer is mainly composed of carbides because the nanobeam diffraction pattern is a layer indexed to the crystal structure of WC.
- the a layer may partially contain nitrogen or oxygen, as long as the layer has a nanobeam diffraction pattern indexed to the crystal structure of WC.
- a layer may contain a metal layer in part.
- metal ion bombardment processing using an alloy target mainly composed of metal Ti or Ti has a large improvement effect on adhesion. Therefore, it is preferable that the a layer contains a large amount of Ti next to W in the content ratio of the metal element. However, if the content ratio of Ti contained in the a layer is too large or too small, it is difficult to obtain the effect of improving the adhesion.
- the a layer preferably contains Ti at 10 atomic% or more and 30 atomic% or less.
- the hard coating according to the present embodiment is preferably coated by arc ion plating in which the ionization rate of the target is high. Moreover, you may coat
- the cathode voltage When the cathode voltage is too low, the amount of AlN in the hcp structure of the laminated film increases and the durability decreases. In addition, when the cathode voltage becomes too high, the film structure of the laminated film becomes too coarse, and the durability tends to be reduced. In a cathode for forming an AlTi-based hard film, it is preferable to form a film in a cathode voltage range of 20 V or more and 30 V or less. If the cathode voltage becomes too low, the amount of AlN in the hcp structure increases and the durability decreases. In addition, when the cathode voltage becomes too high, the film structure of the laminated film becomes too coarse, and the durability tends to be reduced.
- the cathode current is preferably 120A or more and 200A or less.
- the absolute value of the negative bias voltage applied to the substrate is increased. Is preferred. According to this manufacturing method, the formation of AlN with a microstructure of hcp structure is suppressed, and the value of Ih ⁇ 100 / Is can be made smaller than 15.
- the negative bias voltage applied to the substrate is preferably -200 V or more and less than -100 V. Furthermore, -120 V or less is preferable.
- the coating temperature is preferably 400 ° C. or more and 600 ° C. or less.
- nitrogen gas is introduced into the furnace for coating.
- the nitrogen gas pressure at the time of coating is preferably 2.0 Pa or more and 8.0 Pa or less.
- part of nitrogen gas may be replaced with methane gas.
- the film forming apparatus includes a plurality of cathodes (arc evaporation sources), a vacuum vessel, and a substrate rotating mechanism.
- a cathode one cathode (hereinafter referred to as "C1") having a coil magnet disposed on the outer periphery of the target and a permanent magnet disposed on the back and outer periphery of the target, the magnetic flux density in the vertical direction on the target surface
- C2, C3, C4" Three cathodes having a magnetic flux density of 14 mT in the vicinity of the center of the target are mounted.
- C1 to C4 are disposed at intervals of about 90 ° around the region where the base material is disposed, and C1 and C4 and C2 and C3 are provided to face each other.
- the inside of the vacuum vessel is evacuated by a vacuum pump so that the gas is introduced from the supply port.
- a bias power supply is connected to each substrate installed in the vacuum vessel, and a negative DC bias voltage can be independently applied to each substrate.
- the substrate rotating mechanism includes a planetary, a plate-like jig disposed on the planetary, and a pipe-like jig disposed on the plate-like jig, and the planetary is at a speed of 3 revolutions per minute.
- the plate-like jig and the pipe-like jig respectively rotate and revolve.
- Example 1 the following square end mill was used for the substrate.
- Example 1 a metallic titanium target was placed at C1, an AlTi based alloy target at C2, an AlCrSi based alloy target at C3, and a TiSi based alloy target at C4.
- Each base material was fixed to the pipe-like jig in a vacuum vessel, respectively, and the following process was implemented before film-forming.
- the inside of the vacuum vessel was evacuated to 5 ⁇ 10 ⁇ 2 Pa or less.
- the substrate was heated to a temperature of 500 ° C. by a heater installed in a vacuum vessel, and evacuation was performed.
- the set temperature of the substrate was set to 500 ° C.
- the pressure in the vacuum vessel was set to 5 ⁇ 10 ⁇ 2 Pa or less.
- ⁇ Ar bombardment> Thereafter, 50 sccm of argon (Ar) gas was introduced into the vacuum vessel by flow control. The pressure in the vacuum vessel at that time was about 0.5 Pa. Next, while the substrate and C1 were cut off, while applying a current of 200 A to C1 to discharge Ti, a bias voltage of ⁇ 200 V was applied to the substrate, and Ar bombardment was performed for 30 minutes. The Ar bombardment process reduced oxygen in the furnace more.
- Ar argon
- the set temperature of the base material was set to 480 ° C.
- nitrogen gas was introduced into the vacuum vessel, and the pressure in the furnace was set to 3.2 Pa.
- the negative bias voltage applied to the substrate was ⁇ 120 V and the current applied to C 2 was 200 A for all the samples.
- the negative bias voltage applied to the substrate was ⁇ 40 V and the current applied to C 4 was 200 A for all the samples.
- the sample changed the negative bias voltage applied to the substrate.
- the power input to C2 is constant, and the power input to C3 is gradually increased, and the c2 layer (AlTiN based) is more than the c1 layer (AlCrN based) in the portion on the b layer side of the c layer. It was coated to be a thick film. At the time of coating, the cathode voltage of C2 was 20 V or more and 30 V or less, and the cathode voltage of C3 was 20 V or more and 35 V or less.
- Table 1 shows the target compositions used.
- Table 2 shows the film formation conditions.
- Table 3 shows the film thickness of the sample.
- the cutting test was done on the cutting conditions shown below. In addition, in the market, it evaluated also about the commercially available solid end mill widely used for cutting of high hardness material.
- Commercial product 1 is provided with about 2 ⁇ m of Al 60 Cr 25 Ti 15 N (the numerical value is the atomic ratio, the same applies hereinafter) on the surface of the substrate, and about 2 ⁇ m of Ti 80 Si 20 N on it.
- Al 60 Cr 25 Ti 15 N was provided to about 0.5 ⁇ m to form a film structure.
- the commercially available product 2 had a film structure in which Al 50 Ti 35 Cr 15 N was provided about 3 ⁇ m on the surface of a substrate, and Cr 55 Al 35 Si 10 N was provided about 1 ⁇ m thereon. Table 4 shows the cutting test results.
- the maximum wear width was small under any of the processing conditions, and a stable wear form was exhibited, and it was possible to continue cutting.
- the present examples 1 and 2 are compared, in the present example 1 in which W is contained in the c2 layer, the maximum wear width tends to be further suppressed under the processing condition of high cutting.
- the present examples 1 and 3 are compared, in the present example 1 in which the absolute value of the negative bias voltage applied to the substrate is large, the maximum wear width tends to be further suppressed under the processing conditions of high cutting. there were.
- the comparative examples 1 to 3 have the same film composition as the present example 1, and under the low incision processing conditions, the maximum wear width was small as in the present example and showed a stable wear form.
- Comparative Example 4 has a composition in which the content ratio of Al in the laminated film is smaller than that in Examples 1 to 4, and no chipping occurred under the processing conditions of low incisions, but it is more than in Examples 1 to 4.
- the maximum wear width has increased.
- the coated cutting tool of the comparative example 4 generate
- large chipping occurred under any of the processing conditions.
- produce the commercial item 2 the largest wear width became large compared with the coated cutting tool of a present Example also in any process conditions.
- microanalysis of the laminated film was carried out in order to clarify the factor of excellent durability under high load processing conditions.
- the composition analysis was carried out by attached wavelength dispersive electron probe microanalysis (WDS-EPMA) using electron probe microanalyzer device (model number: JXA-8500F) made by JEOL Ltd. It was confirmed that the nitride was substantially the same as the alloy composition of the target.
- the film hardness of the hard film was measured using a nanoindentation tester (ENT-2100 manufactured by Elionix Co., Ltd.). As a result of the measurement, it was confirmed that the hardness of the c layer was about 38 GPa, the hardness of the d layer was about 45 GPa, and the d layer was higher in hardness than the c layer.
- FIG. 2 shows a cross-sectional TEM image ( ⁇ 300,000 times) in the c layer (laminated film) of the first embodiment. It is confirmed from FIG. 2 that the c layer which is a laminated film is formed of fine columnar particles having an average width of 50 to 70 nm.
- FIG. 3 is an example of a cross-sectional dark field STEM image ( ⁇ 1, 800, 000) of the c layer in the first embodiment. It is confirmed from FIG. 3 that the relatively bright portion and the relatively dark portion of the c layer are stacked.
- TEM transmission electron microscope
- the relatively bright portions of arrows 3 to 5 are the Al-rich AlTiN nitride (c2 layer), and the relatively dark arrows 6 are the Al-rich AlCrN nitride (c1 layer). is there.
- the results of arrows (analytical points) 3 to 6 in FIG. 3 and the composition analysis of the entire laminated film are shown in Table 5.
- the compositions of the c1 layer and the c2 layer were determined by analyzing the central portion of each layer using an energy dispersive X-ray spectrometer (EDS) with an analysis region of ⁇ 1 nm. Values after the decimal point were calculated by rounding off.
- EDS energy dispersive X-ray spectrometer
- the c layer of Example 1 was Al-rich throughout the laminated film, and contained at least Si, Ti, and Cr.
- the compositions of the c1 layer and the c2 layer were mixed with each other, and the c1 layer contained the total of Ti and W at 10 atomic% or less.
- the c2 layer of Example 1 contained Cr at 10 atomic% or less.
- the limited field diffraction pattern of the laminated film was determined under the conditions of an acceleration voltage of 120 kV, a limited field of view of 750 nm, a camera length of 100 cm, and an incident electron amount of 5.0 pA / cm 2 (on the fluorescent plate).
- the intensity of the determined limited field diffraction pattern was converted to obtain an intensity profile.
- the analysis point was at the middle part in the film thickness direction.
- FIG. 4 shows an example of the limited field diffraction pattern of the c layer in the first embodiment.
- FIG. 6 shows an example of the limited field diffraction pattern of the c layer in Comparative Example 1 in which the coating conditions of the laminated film are different.
- 5 and 7 show an example of the intensity profile of the limited field diffraction pattern obtained by converting the luminance of the limited field diffraction pattern of the laminated film of FIGS. 4 and 6, respectively.
- the horizontal axis indicates the distance (radius r) from the center of the (000) plane spot, and the vertical axis indicates the integrated intensity (arbitrary unit) for one circle at each radius r.
- arrow 1 is a peak due to the (111) plane of AlN of fcc structure, the (111) plane of TiN, and the (111) plane of CrN.
- Arrow 2 is a peak due to the (200) plane of the fcc structure, the (111) plane of TiN, and the (200) plane of CrN.
- Arrow 3 is a peak due to the (220) plane of AlN of fcc structure, the (111) plane of TiN, and the (220) plane of CrN.
- the peak intensity due to AlN of the hcp structure is not confirmed.
- Example 1 In Examples 1, 2 and 4 in which the negative bias voltage applied to the substrate was -120 V, no peak attributed to AlN (010) was confirmed in the limited field diffraction pattern. On the other hand, in Example 3 in which the negative bias voltage applied to the substrate was -100 V, a peak due to AlN (010) was observed in a small amount in the limited field diffraction pattern, but the amount was As it was, the value of Ih ⁇ 100 / Is was 0. In Examples 1 to 4 and Comparative Examples 1 to 4, no peak intensity attributable to AlN in the hcp structure was confirmed by X-ray diffraction, but in the limited field diffraction pattern, a peak attributable to AlN in the hcp structure There was a difference in strength.
- Examples 1 to 4 it is presumed that the durability was remarkably improved under high load processing conditions because the amount of AlN of the hcp structure contained in the microstructure is small.
- Examples 1, 2 and 4 in which the peak attributed to AlN (010) of the hcp structure was not confirmed in the limited field diffraction pattern, the damaged state of the tool tended to be stabilized.
- Example 2 the film thickness of the laminated film was evaluated.
- the present examples 20 and 21 have the same composition as the present example 1 of the example 1, and the coating time was adjusted to change only the film thickness.
- the cutting test was done on the cutting conditions shown below. Table 6 shows the cutting test results. Details of the cutting conditions are as follows.
- Example 21 Ih ⁇ 100 / Is of the laminated film was 0, the maximum wear width was small, and a stable wear form was exhibited. In particular, in Example 21, the maximum wear width was further suppressed, and it was confirmed that when the film thickness of the c layer was made the thickest film, more excellent durability was exhibited.
- Example 3 the following ball end mill was used for the substrate.
- Example 3 a metallic titanium target was placed at C1, an AlTi based alloy target or a TiSi based alloy target at C2, an AlCrSi based alloy target at C3, and a TiSi based alloy target at C4.
- Table 7 shows the target compositions used.
- the process up to Ar bombardment was the same as in Examples 1 and 2. Thereafter, 50 sccm of argon (Ar) gas was introduced into the vacuum vessel by flow control. The pressure in the vacuum vessel at that time was about 0.2 Pa. The negative bias voltage applied to the substrate was ⁇ 800 V and Ti bombardment was performed for about 15 minutes to provide an a layer on the surface of the substrate.
- Ar argon
- Example 30 to 33 the maximum wear width was small and a stable wear form was exhibited, and the cutting was possible continuously.
- Example 32 since the absolute value of the negative bias voltage applied to the base material was increased, the adjustment of the film thickness became difficult, and the film thickness of the c layer became thinner than in Examples 30, 31, and 33. Therefore, the maximum wear width was larger than those of Examples 30, 31, and 33.
- the maximum wear width tends to be further suppressed in the example 30 in which W is contained in the c2 layer.
- Comparative Examples 30 to 32 showed a stable wear form, but the maximum wear width was larger than that of Examples 30 to 33.
- a micro end analysis was performed by processing a ball end mill for evaluation of physical properties.
- the nanobeam diffraction pattern was indexed to the crystal structure of WC, and in the metal element, there was a 1-10 nm a layer containing a large amount of Ti next to W.
- the a layer contained Ti at 10 atomic% or more and 30 atomic% or less.
- the a layer contained a small amount of base components other than oxygen, nitrogen, and W as unavoidable impurities.
- b layer and d layer it was confirmed similarly to Example 1, 2 that it is a nitride substantially the same as the alloy composition of a target.
- the laminated films of Examples 30, 31, 32, and 33 are Al-rich AlTi nitride (c2 layer) and Al-rich AlCrSi nitride (c1 layer). And were stacked, and Ih ⁇ 100 / Is was 0. That is, also in Examples 30 to 33, the amount of AlN in the hcp structure was reduced. Thereby, it is estimated that the ball end mill also exhibited excellent durability.
- Ih ⁇ 100 / Is was about 20, and it was estimated that the durability was lowered as compared with the present example because the fragile hcp structure AlN increased in the microstructure. Be done.
- the comparative example 32 differs in the composition of laminated film from a present Example, and the largest wear width became large compared with a present Example. From the comparison of Comparative Examples 30 to 32 and Example 32, it was confirmed that the maximum wear width becomes larger as the hcp structured AlN increases even if the film thickness of the c layer is the thickest. Even if the film thickness of the c layer was not the thickest film, the maximum wear width could be suppressed by reducing the hcp structured AlN in the microstructure. By making the film thickness of the c layer the thickest and reducing the hcp structure AlN in the microstructure, it is confirmed that the effect of suppressing the maximum wear width is increased, and particularly excellent durability is exhibited. It was done.
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Abstract
Description
本願は、2017年11月20日に、日本に出願された特願2017-223099号に基づき優先権を主張し、その内容をここに援用する。
例えば、特許文献1には、Si3N4およびSiが独立した相として化合物相中に存在するTiSiNを被覆した被覆切削工具が提案されている。また、特許文献2には、ミクロ組織に微細結晶及び非晶質部が混在したTiSiNを被覆した被覆切削工具が提案されている。
基材と、前記基材上に形成される硬質皮膜とを備え、
前記硬質皮膜は、前記基材の上に配置される、窒化物または炭窒化物からなるb層と、
前記b層の上に配置され、金属(半金属を含む)元素の総量に対して、アルミニウム(Al)を55原子%以上、次いでクロム(Cr)の含有比率が多く、更に、少なくともシリコン(Si)を含有する窒化物または炭窒化物のc1層と、
金属(半金属を含む)元素の総量に対して、アルミニウム(Al)を55原子%以上、次いでチタン(Ti)を多く含有する窒化物または炭窒化物のc2層と、がそれぞれ50nm以下の膜厚で交互に積層した積層皮膜であるc層と、
前記c層の上に配置され、前記c層よりも高硬度なd層と、を有し、
前記c層は、透過型電子顕微鏡の制限視野回折パターンから求められる強度プロファイルにおいて、六方最密充填構造のAlNの(010)面に起因するピーク強度をIhとし、面心立方格子構造の、AlNの(111)面、TiNの(111)面、CrNの(111)面、AlNの(200)面、TiNの(200)面、CrNの(200)面、AlNの(220)面、TiNの(220)面、およびCrNの(220)面に起因するピーク強度と、六方最密充填構造の、AlNの(010)面、AlNの(011)面、およびAlNの(110)面に起因するピーク強度と、の合計をIsとした場合、Ih×100/Is≦15の関係を満たす被覆切削工具である。
また、前記c層は、Ih×100/Is=0の関係を満たすことが好ましい。
また、前記硬質皮膜の総膜厚に対して、前記c層が最も厚い膜であることが好ましい。
また、前記c層は、柱状粒子から構成されており、前記柱状粒子の平均幅は90nm以下であることが好ましい。
また、前記d層は、金属(半金属を含む)元素の総量に対して、チタン(Ti)を70原子%以上、シリコン(Si)を5原子%以上、を含有する窒化物または炭窒化物であることが好ましい。
また、前記c2層は、周期律表の4a族、5a族、6a族の元素およびSi、B、Yから選択される1種または2種以上の元素を含有してもよい。
また、前記基材と前記b層との間に、ナノビーム回折パターンがWCの結晶構造に指数付けされ、膜厚が1nm以上10nm以下のa層を有してもよい。
本実施形態の被覆切削工具においては、基材は特段限定されないが、強度と靭性に優れるWC-Co基超硬合金を基材とすることが好ましい。
本実施形態に係るb層は、基材の上に配置される窒化物または炭窒化物である。b層は、基材と積層皮膜であるc層との密着性を高める下地層である。基材の上に配置されるb層が窒化物または炭窒化物であることで、基材と硬質皮膜の密着性が優れる被覆切削工具となる。b層は、金属(半金属を含む。以下、同様。)元素の総量に対して、Alを55原子%以上で含有することが好ましい。更には、b層のAlは60原子%以上が好ましい。b層をAlリッチとすることで、後述するAlリッチの積層皮膜からなるc層との組成差が小さくなり密着性が向上する。また、b層をAlリッチとすることで、硬質皮膜の全体で耐熱性が高まる。更には、b層は、耐熱性と耐摩耗性に優れる窒化物であることが好ましい。但し、b層のAlの含有比率が大きくなり過ぎると脆弱なhcp構造のAlNが多くなる。そのため、b層のAlは75原子%以下が好ましい。また、積層皮膜であるc層との密着性をより高めるため、b層は後述するc1層またはc2層が含有する金属元素を含有することが好ましい。また、b層は、X線回折または透過型電子顕微鏡の制限視野回折パターンから求められる強度プロファイルにおいて、fcc構造に起因するピーク強度が最大を示すことが好ましい。これにより、b層の上に設けられるAlリッチの積層皮膜であるc層において、c層のミクロ組織に含有されるhcp構造のAlNが低減される。脆弱なhcp構造のAlNが低減されることにより、被覆切削工具の耐久性が向上する。b層は窒化物または炭窒化物であれば、組成が異なる複数の層から構成されてもよい。
本実施形態に係るc層は、上述した下地層であるb層と、後述する高硬度なd層との間に設けられるAlリッチな積層皮膜である。
具体的には、c層は、金属(半金属を含む)元素の総量に対して、アルミニウム(Al)を55原子%以上、次いでクロム(Cr)の含有比率が多く、更に、少なくともシリコン(Si)を含有する窒化物または炭窒化物のc1層と、金属(半金属を含む)元素の総量に対して、アルミニウム(Al)を55原子%以上、次いでチタン(Ti)を多く含有する窒化物または炭窒化物のc2層と、がそれぞれ50nm以下の膜厚で交互に積層した積層皮膜である。
更には、c層は、金属元素の総量に対して、アルミニウム(Al)を55原子%以上、クロム(Cr)を20原子%以上、シリコン(Si)を1原子%以上、を含有する窒化物または炭窒化物のc1層と、金属部分の総量に対して、アルミニウム(Al)を55原子%以上、チタン(Ti)を20原子%以上、を含有する窒化物または炭窒化物のc2層とが50nm以下の膜厚で交互に積層した積層皮膜であることが好ましい。
組成系が互いに異なるAlリッチなAlCrN系の硬質皮膜とAlリッチなAlTiN系の硬質皮膜とがナノレベルで交互に積層されることで、皮膜破壊の進展が抑制され易くなる。また、c層中にhcp構造のAlNを含有し難くなり、硬質皮膜の全体で耐熱性が高まり被覆切削工具の耐久性が向上する。
c層の平均組成は、Alの含有比率が55原子%以上75原子%以下であることが好ましい。更には、c層の平均組成は、Alの含有比率が60原子%以上70原子%以下であることが好ましい。また、c層の平均組成は、CrとTiの合計の含有率が20原子%以上40原子%以下であることが好ましい。また、c層の平均組成は、Siの含有比率が0.5原子%以上5原子%以下であることが好ましい。更には、c層の平均組成は、Siの含有比率が1原子%以上3原子%以下であることが好ましい。なお、c層の平均組成は、500nm×500nm以上の範囲を測定して算出すればよい。
更には、c層はミクロ組織に含有されるhcp構造のAlNが少ないことが必要である。本発明者は、c層の評価においてX線回折ではhcp構造のAlNのピーク強度が確認されない場合でも、ミクロ組織には脆弱なhcp構造のAlNを含有する場合があることを知見した。そして、本発明者は、c層のミクロ組織に含まれる脆弱なhcp構造のAlNを低減することで、被覆切削工具の耐久性が向上することを確認した。
Is:fcc構造の、AlNの(111)面、TiNの(111)面、CrNの(111)面、AlNの(200)面、TiNの(200)面、CrNの(200)面、AlNの(220)面、TiNの(220)面、およびCrNの(220)面に起因するピーク強度と、hcp構造の、AlNの(010)面、AlNの(011)面、およびAlNの(110)面に起因するピーク強度と、の合計。
更には、本実施形態の被覆切削工具は、c層においてhcp構造のAlNの(010)面に起因するピーク強度が確認されない構成であることが好ましい。すなわち、本実施形態の被覆切削工具は、c層がIh×100/Is=0を満たす構成であることが好ましい。なお、制限視野回折パターンにおいて、hcp構造のAlNの回折パターンが確認される場合でも、その量が微量であれば、強度プロファイルにはピークが現れずIh×100/Isの値は0になる場合がある。c層の制限視野回折パターンにおいて、hcp構造のAlNが確認されないことが、被覆切削工具の耐久性をより高めるために好ましい。
c1層は、金属(半金属を含む)元素の総量に対して、アルミニウム(Al)を55原子%以上、次いでクロム(Cr)の含有比率が多く、更に、少なくともシリコン(Si)を含有する窒化物または炭窒化物である。更には、c1層は、金属元素の総量に対して、アルミニウム(Al)を55原子%以上、クロム(Cr)を20原子%以上、シリコン(Si)を1原子%以上、を含有する窒化物または炭窒化物であることが好ましい。
AlとCrをベースとする窒化物または炭窒化物は、耐熱性に優れる膜種である。特にAlの含有比率が大きくなると硬質皮膜の耐熱性が向上する傾向にあり、被覆切削工具の耐久性が向上する。更には、c1層は、耐熱性と耐摩耗性に優れる窒化物であることが好ましい。硬質皮膜に高い耐熱性を付与するために、c1層はAlを55原子%以上で含有する。更にはc1層のAl含有比率は60原子%以上が好ましい。但し、Alの含有比率が大きくなり過ぎると、ミクロ組織に含有される脆弱なhcp構造のAlNが多くなるため、硬質皮膜の耐久性が低下する。そのため、c1層のAl含有比率は75原子%以下、更には70原子%以下が好ましい。
但し、c1層がAlとCrとSi以外の金属元素を多く含有するとAlCrN系の硬質皮膜としての基礎特性が損なわれ被覆切削工具の耐久性が低下する。そのため、c1層はAlとCrとSi以外の金属元素の合計が25原子%以下、更には20原子%以下、更には15原子%以下であることが好ましい。
c2層は、金属(半金属を含む)元素の総量に対して、アルミニウム(Al)を55原子%以上、次いでチタン(Ti)を多く含有する窒化物または炭窒化物である。更には、c2層は、金属元素の総量に対して、アルミニウム(Al)を55原子%以上、チタン(Ti)を20原子%以上、で含有する窒化物または炭窒化物であることが好ましい。AlとTiを主体とする窒化物または炭窒化物は、耐摩耗性および耐熱性に優れる膜種である。特に、Alの含有比率が大きくなると硬質皮膜の耐熱性が向上する傾向にあり、被覆切削工具の耐久性が向上する。更には、耐熱性と耐摩耗性に優れる窒化物であることが好ましい。硬質皮膜に高い耐熱性を付与するために、c2層はAlを55原子%以上で含有する。更にはc2層のAlは60原子%以上が好ましい。但し、Alの含有比率が大きくなり過ぎると、hcp構造のAlNが多くなるため、硬質皮膜の耐久性が低下する。そのため、c2層のAlの含有比率は75原子%以下、更には70原子%以下が好ましい。
但し、c2層がAlとTi以外の金属元素を多く含有すると、AlTiN系の硬質皮膜としての基礎特性が損なわれ被覆切削工具の耐久性が低下する。そのため、c2層はAlとTi以外の金属元素の合計が25原子%以下、更には20原子%以下、更には15原子%以下であることが好ましい。
各層の最適な膜厚は、工具の種類、工具径および被削材等により異なるが、何れもc層が最も厚い膜となることで優れた耐久性を実現し易い。そして、b層、c層、d層の合計の膜厚を100%とした場合、c層の膜厚比が50%以上、更には60%以上、更には70%以上が好ましい。但し、c層の膜厚比が大きくなり過ぎると、b層とd層の膜厚が小さくなるため、密着性や耐摩耗性が低下する。そのため、c層の膜厚比は90%以下、更には85%以下が好ましい。
b層の膜厚比は5%以上が好ましい。d層の膜厚比は10%以上が好ましい。
本実施形態に係るd層は、積層皮膜であるc層の上層に設けられ、c層よりも硬質の高硬度層である。本実施形態においてc層の硬度は特に限定されるものではないが、c層のナノインデンテーション硬度は概ね35~40GPaの範囲となる。c層の上層に高硬度のd層を設けることで、主層であるc層の摩耗が抑制されて、被覆切削工具の耐久性がより向上する。d層はc層よりも高硬度であれば、c層の保護皮膜としての一定の効果を奏することができる。本実施形態においてd層の皮膜組成は特段限定されない。本実施形態においてd層のナノインデンテーション硬度を40GPa以上とすることで被覆切削工具の耐久性がより向上するので好ましい。d層とc層の間には、d層とc層の積層皮膜を設けても良い。
本実施形態では、必要に応じて、基材と下地層b層との間に、ナノビーム回折パターンがWCの結晶構造に指数付けされるa層を有してもよい。a層は金属イオンボンバードにより基材の表面に形成される。a層は金属イオンボンバードに用いた金属元素が拡散して形成される層であるため、WC-Co基超硬合金を基材とする場合、金属元素の総量でW(タングステン)を最も多く含有しており、次いで金属イオンボンバードに用いた金属元素を含有する。このようなa層を有することで、基材とその上に設ける下地層との密着性が著しく改善する傾向にある。
但し、工具径が小さくなると、刃先が鋭角になり易いスクエアエンドミルやラジアスエンドミルにおいては、金属イオンボンバードにより、刃先が溶損する場合があり、刃先稜線が破壊され易くなる。そのため、a層は、金属イオンボンバードにより刃先稜線が破壊され難い、鋭角な刃先が形成されないボールエンドミルに設けることが好ましい。a層の膜厚が薄すぎる場合や、厚すぎる場合には密着性の改善効果が得られない。そのため、a層の膜厚は1nm以上10nm以下が好ましい。
a層はナノビーム回折パターンがWCの結晶構造に指数付けされる層であるため、主に炭化物から構成される。a層はナノビーム回折パターンがWCの結晶構造に指数付けされる層であれば、一部に、窒素や酸素を含有してもよい。また、a層は、一部に金属層を含有する場合もある。特に、金属TiやTiを主体とする合金ターゲットを用いた金属イオンボンバード処理は密着性の改善効果が大きい。そのため、a層は金属元素の含有比率で、WについでTiを多く含有することが好ましい。但し、a層に含有されるTiの含有比率が多くなり過ぎたり、少なくなり過ぎると密着性の向上効果が得られ難い。a層はTiを10原子%以上30原子%以下で含有することが好ましい。
本実施形態に係る硬質皮膜は、ターゲットのイオン化率が高いアークイオンプレーティング法で被覆することが好ましい。また、ターゲットのイオン化率が高い高出力スパッタリング法で被覆してもよい。そして、Alリッチの積層皮膜について、結晶性を高めてミクロ組織に含有されるhcp構造のAlNを低減するために、ターゲット中心付近の垂直方向における磁束密度が10mT以上のカソードを用いることが好ましい。
また、AlCr系の硬質皮膜を形成するためのカソードでは、カソード電圧が20V以上35V以下の範囲で成膜することが好ましい。カソード電圧が低すぎると、積層皮膜のhcp構造のAlNが多くなり耐久性が低下する。また、カソード電圧が高くなり過ぎると、積層皮膜の皮膜組織が粗大になり過ぎて耐久性が低下し易くなる。AlTi系の硬質皮膜を形成するためのカソードでは、カソード電圧が20V以上30V以下の範囲で成膜することが好ましい。カソード電圧が低くなり過ぎると、hcp構造のAlNが多くなり耐久性が低下する。また、カソード電圧が高くなり過ぎると、積層皮膜の皮膜組織が粗大になり過ぎて耐久性が低下し易くなる。カソード電流はそれぞれ120A以上200A以下が好ましい。
本実施形態の製造方法では、ターゲット中心付近の垂直方向における磁束密度とカソード電圧を上述した範囲になる成膜装置を選定した上で、基材に印加する負のバイアス電圧の絶対値を大きくすることが好ましい。この製造方法によれば、ミクロ組織のhcp構造のAlNの生成が抑制され、Ih×100/Isの値を15よりも小さくすることができる。
基材に印加する負のバイアス電圧は-200V以上-100V未満が好ましい。更には、-120V以下が好ましい。バイアス電圧の絶対値が大きくなり過ぎると、成膜が安定し難く膜厚を調整することが困難となる。また、バイアス電圧の絶対値が小さくなり過ぎると、hcp構造のAlNが多くなり耐久性が低下する。被覆温度は400℃以上600℃以下が好ましい。窒化物を被覆する場合、炉内に窒素ガスを導入して被覆する。また、被覆時の窒素ガス圧力は2.0Pa以上8.0Pa以下が好ましい。炭窒化物を被覆する場合には、窒素ガスの一部をメタンガスに置換すればよい。
成膜には、アークイオンプレーティング法を利用した成膜装置を用いた。この成膜装置は、複数のカソード(アーク蒸発源)、真空容器、および基材回転機構を備えている。カソードとしては、ターゲットの外周にコイル磁石が配備されたカソードを1基(以下、「C1」という。)と、ターゲットの背面および外周に永久磁石が配備され、ターゲット表面に垂直方向の磁束密度を有し、ターゲット中央付近における垂直方向の磁束密度が14mTであるカソードを3基(以下、「C2、C3、C4」という。)と、が搭載されている。
C1~C4は基材が配置される領域の周囲に約90°間隔に配置されており、C1とC4、C2とC3とが対向するように設けられている。
組成:WC(bal.)-Co(8質量%)-Cr(0.5質量%)-V(0.3質量%)
硬度:94.0HRA
刃径:6mm、刃数:6枚
その後、真空容器内に流量制御でアルゴン(Ar)ガスを50sccm導入した。その際の真空容器内の圧力は約0.5Paであった。次いで、基材とC1との間を遮断した状態でC1に200Aの電流を供給してTiを放電させながら、基材に-200Vのバイアス電圧を印加して、Arボンバードを30分間実施した。このArボンバード処理により、炉内の酸素をより低減させた。
その後、基材の設定温度を480℃として、真空容器内に窒素ガスを導入して、炉内圧力を3.2Paとした。
b層の被覆では、何れの試料も基材に印加する負のバイアス電圧を-120V、C2に印加する電流を200Aとした。また、d層の被覆では、何れの試料も基材に印加する負のバイアス電圧を-40V、C4に印加する電流を200Aとした。
c層の被覆では、試料により基材に印加する負のバイアス電圧を変化させた。また、C2に投入する電力は一定として、C3に投入する電力を徐々に増加させていき、c層のb層側の部分ではc2層(AlTiN系)の方がc1層(AlCrN系)よりも厚い膜になるよう被覆した。なお、被覆時の、C2のカソード電圧は20V以上30V以下、C3のカソード電圧は20V以上35V以下であった。
表1に使用したターゲット組成を示す。表2に成膜条件を示す。表3に試料の膜厚を示す。
なお、市場において、高硬度材の切削加工に広く使用されている市販のソリッドエンドミルについても評価した。市販品1は、基材の表面にAl60Cr25Ti15N(数値は原子比率である。以下、同様。)を約2μm設け、その上にTi80Si20Nを約2μm設、最表層にAl60Cr25Ti15Nを約0.5μm設けた皮膜構造であった。市販品2は、基材の表面にAl50Ti35Cr15Nを約3μm設け、その上にCr55Al35Si10Nを約1μm設けた皮膜構造であった。
表4に切削試験結果を示す。切削条件の詳細は、以下の通りである。
<加工条件A>
・切削方法:側面切削
・被削材:STAVAX(52HRC)
・使用工具:6枚刃スクエアエンドミル(工具径6mm)
・切り込み:軸方向、6.0mm、径方向、0.1mm
・切削速度: 70m/min
・一刃送り量:0.026mm/刃
・クーラント:ドライ加工(エアーブロー)
・切削距離:40m
<加工条件B>
・切削方法:側面切削
・被削材:STAVAX(52HRC)
・使用工具:6枚刃スクエアエンドミル(工具径6mm)
・切り込み:軸方向、6.0mm、径方向、0.3mm
・切削速度: 70m/min
・一刃送り量:0.026mm/刃
・クーラント:ドライ加工(エアーブロー)
・切削距離:40m
比較例1~3は、本実施例1と同様の皮膜組成であり、低切込みの加工条件においては、本実施例と同様に最大摩耗幅が小さく、安定した摩耗形態を示した。しかし、高切込みの加工条件においては、比較例1~3では、欠けが発生して、継続して切削加工できなかった。
比較例4は、本実施例1~4よりも積層皮膜のAlの含有比率が少ない組成であり、低切込みの加工条件においては、欠けは発生しなかったが、本実施例1~4よりも最大摩耗幅が大きくなった。また、高切込みの加工条件においては、比較例4の被覆切削工具は、欠けが発生して継続して切削加工できなかった。
市販品1は、いずれの加工条件でも大きな欠けが発生した。また、市販品2は、欠けは発生しなかったが、いずれの加工条件でも本実施例の被覆切削工具に比べて最大摩耗幅が大きくなった。
なお、b層とd層については、株式会社日本電子製の電子プローブマイクロアナライザー装置(型番:JXA-8500F)を用いて、付属の波長分散型電子プローブ微小分析(WDS-EPMA)で組成分析を行い、ターゲットの合金組成とほぼ同一の窒化物であることが確認された。また、硬質皮膜の皮膜硬さを、ナノインデンテーションテスター(エリオニクス(株)製ENT-2100)を用いて測定した。測定の結果、c層の硬度は約38GPa、d層の硬度は約45GPaであり、d層がc層よりも高硬度であることが確認された。
図3中の矢印(分析点)3~6および積層皮膜の全体の組成分析の結果を表5に示す。c1層とc2層の組成は、エネルギー分散型X線分光器(EDS)を用いて、分析領域をφ1nmとして、各層の中心部分を分析することで求めた。小数点以下の値は四捨五入して求めた。
本実施例1のc層は、積層皮膜の全体でAlリッチであり、少なくともSiとTiとCrを含有していた。本実施例1では、c1層とc2層の組成は相互に混ざっており、c1層はTiとWの合計を10原子%以下で含有していた。また、本実施例1のc2層はCrを10原子%以下で含有していた。
図5に示すように本発明例1はhcp構造のAlN(010)に起因するピークは確認されず、Ih×100/Isは0である。一方、比較例1は、Ih×100/Isは19となった。
本実施例1~4は何れも、積層皮膜のIh×100/Isは0であった。また、比較例2~4のIh×100/Isは比較例1とほぼ同じであった。基材に印加する負のバイアス電圧を-120Vとした本実施例1、2、4については制限視野回折パターンでAlN(010)に起因するピークが確認されなかった。一方、基材に印加する負のバイアス電圧を-100Vとした本実施例3については、制限視野回折パターンにはAlN(010)に起因するピークが微量に確認されたが、その量が微量であったので、Ih×100/Isの値は0となった。
本実施例1~4および比較例1~4について、X線回折では、hcp構造のAlNに起因するピーク強度は確認されなかったが、制限視野回折パターンにおいては、hcp構造のAlNに起因するピーク強度に差異が生じた。本実施例1~4は、ミクロ組織に含有されるhcp構造のAlNが少ないために、高負荷な加工条件において、耐久性が著しく改善されたと推定される。特に、制限視野回折パターンでhcp構造のAlN(010)に起因するピークが確認されなかった実施例1、2、4は、工具の損傷状態が安定する傾向にあった。
作製した被覆切削工具について、以下に示す切削条件にて切削試験を行った。表6に切削試験結果を示す。切削条件の詳細は、以下の通りである。
<加工条件C>
・切削方法:底面切削
・被削材:STAVAX(52HRC)
・使用工具:4枚刃スクエアエンドミル(工具径6mm)・切り込み:軸方向、6.0mm、径方向、0.1mm
・切削速度: 70m/min
・一刃送り量:0.04mm/刃
・クーラント:ドライ加工(エアーブロー)
・切削距離:40m
組成:WC(bal.)-Co(8質量%)-Cr(0.8質量%)-Ta(0.2質量%)
硬度:93.2HRA
刃径:1.0mm
その後、基材の設定温度を480℃として、真空容器内に窒素ガスを導入して、炉内圧力を5.0Paとした。
b層の被覆では、何れの試料も基材に印加する負のバイアス電圧を-100V、C2に印加する電流を200Aとした。また、d層の被覆では、何れの試料も基材に印加する負のバイアス電圧を-50V、C4に印加する電流を200Aとした。c層の被覆では、試料により基材に印加する負のバイアス電圧を変化させた。表8に成膜条件を示す。表9に試料の膜厚を示す。
<加工条件D>
・切削方法:底面切削
・被削材:STAVAX(52HRC)
・使用工具:2枚刃ボールエンドミル(工具径1mm首下長6mm)・切り込み:軸方向、0.04mm、径方向、0.04mm・切削速度: 75m/min
・一刃送り量:0.018mm/刃
・クーラント:ドライ加工
・切削距離:90m
一方、比較例30~32は安定した摩耗形態を示したが、本実施例30~33と比較して最大摩耗幅が大きくなった。
なお、b層とd層については、実施例1、2と同様にターゲットの合金組成と略同一の窒化物であることが確認された。
比較例30~32と本実施例32の比較から、c層の膜厚を最も厚い膜にしても、hcp構造のAlNが増加すると、最大摩耗幅が大きくなることが確認された。c層の膜厚を最も厚い膜にしなくても、ミクロ組織におけるhcp構造のAlNを低減することで、最大摩耗幅を抑制することができた。c層の膜厚を最も厚い膜にして、かつ、ミクロ組織におけるhcp構造のAlNを低減することで、最大摩耗幅が抑制される効果が大きくなり、特に優れた耐久性を発揮することが確認された。
Claims (8)
- 基材と、前記基材上に形成される硬質皮膜とを備え、
前記硬質皮膜は、
前記基材の上に配置される、窒化物または炭窒化物からなるb層と、
前記b層の上に配置され、金属(半金属を含む)元素の総量に対して、アルミニウム(Al)を55原子%以上、次いでクロム(Cr)の含有比率が多く、更に、少なくともシリコン(Si)を含有する窒化物または炭窒化物のc1層と、
金属(半金属を含む)元素の総量に対して、アルミニウム(Al)を55原子%以上、次いでチタン(Ti)を多く含有する窒化物または炭窒化物のc2層と、がそれぞれ50nm以下の膜厚で交互に積層した積層皮膜であるc層と、
前記c層の上に配置され、前記c層よりも高硬度なd層と、
を有し、
前記c層は、透過型電子顕微鏡の制限視野回折パターンから求められる強度プロファイルにおいて、六方最密充填構造のAlNの(010)面に起因するピーク強度をIhとし、面心立方格子構造の、AlNの(111)面、TiNの(111)面、CrNの(111)面、AlNの(200)面、TiNの(200)面、CrNの(200)面、AlNの(220)面、TiNの(220)面、およびCrNの(220)面に起因するピーク強度と、六方最密充填構造の、AlNの(010)面、AlNの(011)面、およびAlNの(110)面に起因するピーク強度と、の合計をIsとした場合、Ih×100/Is≦15の関係を満たすことを特徴とする被覆切削工具。 - 前記c1層は、金属(半金属を含む)元素の総量に対して、アルミニウム(Al)を55原子%以上、クロム(Cr)を20原子%以上、シリコン(Si)を1原子%以上、を含有する窒化物または炭窒化物であり、
前記c2層は、金属(半金属を含む)元素の総量に対して、アルミニウム(Al)を55原子%以上、チタン(Ti)を20原子%以上、を含有する窒化物または炭窒化物であることを特徴とする請求項1に記載の被覆切削工具。 - 前記c層は、Ih×100/Is=0の関係を満たすことを特徴とする請求項1または2に記載の被覆切削工具。
- 前記硬質皮膜の総膜厚に対して、前記c層が最も厚い膜であることを特徴とする請求項1ないし3の何れか1項に記載の被覆切削工具。
- 前記c層は、柱状粒子から構成されており、前記柱状粒子の平均幅は90nm以下であることを特徴とする請求項1ないし4の何れか1項に記載の被覆切削工具。
- 前記d層は、金属(半金属を含む)元素の総量に対して、チタン(Ti)を70原子%以上、シリコン(Si)を5原子%以上、を含有する窒化物または炭窒化物であることを特徴とする請求項1ないし5の何れか1項に記載の被覆切削工具。
- 前記c2層は、周期律表の4a族、5a族、6a族の元素およびSi、B、Yから選択される1種または2種以上の元素を含有することを特徴とする請求項1ないし6の何れか1項に記載の被覆切削工具。
- 前記基材と前記b層との間に、ナノビーム回折パターンがWCの結晶構造に指数付けされ、膜厚が1nm以上10nm以下のa層を有することを特徴とする請求項1ないし7の何れか1項に記載の被覆切削工具。
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EP3967430A4 (en) * | 2019-05-09 | 2022-08-31 | MOLDINO Tool Engineering, Ltd. | COATED CUTTING TOOL |
JP7410383B2 (ja) | 2019-12-27 | 2024-01-10 | 株式会社Moldino | 被覆切削工具 |
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WO2020213259A1 (ja) * | 2019-04-17 | 2020-10-22 | 住友電工ハードメタル株式会社 | 切削工具 |
CN114829044A (zh) * | 2019-12-24 | 2022-07-29 | 株式会社Moldino | 包覆切削工具 |
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