WO2019092960A1 - Composition pour liaison par frittage, feuille pour liaison par frittage et bande de découpage en dés pourvue d'une feuille pour liaison par frittage - Google Patents

Composition pour liaison par frittage, feuille pour liaison par frittage et bande de découpage en dés pourvue d'une feuille pour liaison par frittage Download PDF

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Publication number
WO2019092960A1
WO2019092960A1 PCT/JP2018/032290 JP2018032290W WO2019092960A1 WO 2019092960 A1 WO2019092960 A1 WO 2019092960A1 JP 2018032290 W JP2018032290 W JP 2018032290W WO 2019092960 A1 WO2019092960 A1 WO 2019092960A1
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Prior art keywords
bonding
sheet
sinter
sinter bonding
composition
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PCT/JP2018/032290
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English (en)
Japanese (ja)
Inventor
市川智昭
菅生悠樹
下田麻由
三田亮太
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日東電工株式会社
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Application filed by 日東電工株式会社 filed Critical 日東電工株式会社
Priority to US16/763,298 priority Critical patent/US11352527B2/en
Priority to EP18876142.3A priority patent/EP3711879A4/fr
Priority to JP2019551897A priority patent/JP7503383B2/ja
Priority to CN201880073024.6A priority patent/CN111328302B/zh
Publication of WO2019092960A1 publication Critical patent/WO2019092960A1/fr
Priority to JP2022190681A priority patent/JP7440598B2/ja

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    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/35—Heat-activated
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    • B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
    • B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
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    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present invention relates to a sinter bonding composition, a sinter bonding sheet, and a dicing tape with a sinter bonding sheet that can be used for manufacturing a semiconductor device or the like.
  • Au— as a method for die bonding a semiconductor chip to a support substrate such as a lead frame or an insulating circuit substrate while electrically connecting the semiconductor chip to the support substrate side.
  • a support substrate such as a lead frame or an insulating circuit substrate
  • solder or a conductive particle-containing resin as a bonding material.
  • the semiconductor chip is subjected to the sinter bonding composition at a predetermined temperature with respect to the chip bonding planned portion of the support substrate. Placed under load conditions. Thereafter, predetermined temperature and pressure conditions are applied so that evaporation of the solvent in the composition for sintering and bonding occurs between the support substrate and the semiconductor chip thereon and sintering progresses between the sinterable particles. A heating process is performed. As a result, a sintered layer is formed between the support substrate and the semiconductor chip, and the semiconductor chip is mechanically connected to the support substrate while being electrically connected.
  • Patent Documents 1 and 2 Such techniques are described, for example, in the following Patent Documents 1 and 2.
  • the sinter layer formed between the support substrate and the semiconductor chip is caused by the large porosity thereof. In some cases, sufficient bonding reliability can not be secured.
  • the porosity of the sintered layer to be formed tends to be smaller as the load condition such as the pressure condition in the high temperature heating process for sintering becomes higher, the equipment and equipment for carrying out the sintering process are required Performance is increased. From the viewpoint of production efficiency of the product to be produced, it is preferable that the performance required for the apparatus and equipment for the sintering process is not high.
  • the present invention was conceived under the circumstances as described above, and the object thereof is a sinter bonding suitable for realizing sinter bonding with a high density sinter layer under a low load condition. It is an object of the present invention to provide a composition for sintering, a sheet for sintering bonding, and a dicing tape with a sheet for sintering bonding.
  • a composition for sinter bonding contains sinterable particles containing a conductive metal.
  • the average particle size of the sinterable particles in the present composition is 2 ⁇ m or less.
  • the proportion of particles having a particle size of 100 nm or less in the sinterable particles is 80% by mass or more. That is, in the sinterable particles, the proportion of particles having a particle size exceeding 100 nm is 20% by mass or less.
  • the composition of this configuration can be used for sinter bonding between objects to be bonded.
  • the present composition can be used to sinter and bond a semiconductor chip to a support substrate while making an electrical connection with the support substrate in the manufacture of a semiconductor device.
  • the objects to be bonded are pressure-bonded and temporarily fixed under predetermined conditions, Then, a high temperature heating process under a predetermined temperature and pressure condition is performed, and a sintered layer for joining objects to be joined is formed from the composition.
  • the above particle size distribution configuration of the conductive metal-containing sinterable particles to be blended in the composition for sinter bonding used in such sinter bonding process that is, the average particle diameter is 2 ⁇ m or less
  • the present inventors have found that a configuration in which the proportion of particles with a diameter of 100 nm or less is 80% by mass or more is suitable for forming a high-density sintered layer from the composition by sintering under low load conditions. It has gained. For example, they are as shown by the following examples and comparative examples.
  • the particles in the composition when the content ratio of the sinterable particles in the composition for sinter bonding is as large as, for example, 85 mass%, the particles in the composition It is considered that particles having a diameter of 100 nm or less and particles having a particle diameter of more than 100 nm are in a close packing state and the total contact area between particles tends to be large.
  • the present inventors also found that the higher the density of the sintered layer formed from the composition containing the conductive metal-containing sinterable particles, the higher the bonding reliability tends to be obtained in the sintered layer. Is getting. For example, they are as shown by the following examples and comparative examples. Particularly in sinter bonding for mechanically bonding a semiconductor chip to a support substrate while taking an electrical connection with the support substrate side, a high degree of reliability is secured for bonding between objects to be joined by a sintered layer. It is required to be done.
  • the present composition suitable for achieving sinter bonding with high density sinter layer under low load condition is suitable for achieving high bonding reliability with high density sinter layer in low load condition sintering process .
  • the composition for sinter bonding according to the first aspect of the present invention is suitable for achieving sinter bonding with a high density sinter layer under a low load condition, and thus a high density sinter layer It is suitable to realize high bonding reliability by the sintering process under low load conditions.
  • Such a composition for sinter bonding is preferable from the viewpoint of improving the production efficiency of the product to be produced.
  • low load conditions in the sintering process include pressureless conditions.
  • the content ratio of the sinterable particles in the present composition for sinter bonding is preferably 90 to 98% by mass, more preferably 92 to 98% by mass, and more preferably 94 to 98% by mass. Such a configuration is suitable for achieving high density of the formed sintered layer.
  • the porosity of the present sintering bonding composition is preferably 10% or less, more preferably 8% or less, more preferably 6% or less, more preferably 4% or less. Such a configuration is suitable for achieving high density of the formed sintered layer.
  • the present sinter bonding composition preferably comprises a thermally degradable polymer binder together with the above-mentioned sinterable particles containing a conductive metal.
  • the thermally degradable polymer binder refers to a binder component that can be thermally decomposed in a high temperature heating process for sintering and bonding. According to such a configuration, the cohesive force of the main sintering bonding composition using the viscoelasticity of the thermally degradable polymer binder at the temperature at the above-mentioned temporary fixation, for example, at a temperature range of 70 ° C. and its vicinity It is easy to ensure the adhesion of the composition.
  • the weight average molecular weight of the thermally degradable polymer binder in the present sintering bonding composition is preferably 10,000 or more. Such a configuration is suitable for securing the cohesion and adhesion of the present sintering bonding composition by utilizing the viscoelasticity of the thermally degradable polymer binder.
  • the thermally degradable polymer binder in the present sintering bonding composition is preferably a polycarbonate resin and / or an acrylic resin.
  • high temperature heating for sinter bonding is performed after the objects to be bonded are temporarily fixed with the composition. .
  • the high temperature heating for sinter bonding is performed, for example, in a temperature range including 300 ° C. and the vicinity thereof, and the polycarbonate resin and the acrylic resin can be easily prepared as a polymer binder which decomposes and volatilizes at a temperature of about 300 ° C.
  • the present configuration is suitable for reducing organic residues in a sintered layer formed between bonding objects sintered and bonded using the present sintering bonding composition.
  • the sinterable particles in the present sinter bonding composition preferably include at least one selected from the group consisting of silver, copper, silver oxide, and copper oxide. Such a configuration is suitable for forming a strong sintered layer between bonding objects to be sintered and bonded using the present sintering bonding composition.
  • a sheet for sinter bonding includes an adhesive layer formed by the above-described sinter bonding composition according to the first aspect of the present invention.
  • Such a configuration is suitable for supplying a sinter bonding composition with a uniform thickness between objects to be joined and for sinter bonding between objects to be joined with a sinter layer of uniform thickness.
  • Sinter bonding by a sintered layer of uniform thickness is suitable for achieving high bonding reliability of, for example, a semiconductor chip to a supporting substrate.
  • the present sintering bonding sheet is used to sinter and bond the objects to be joined while suppressing the protrusion of the sintered metal from between the objects to be joined and the creeping up of the sintered metal on the side surface of the objects to be joined. Suitable. Since the present sintering bonding sheet is to supply the sintering bonding material in the form of a hard-to-fluidize sheet, it is suitable for suppressing such protrusion and creeping up. Such suppression of protrusion and creeping is preferable in order to improve the yield of a product to be manufactured such as a semiconductor device accompanied by sintering and bonding.
  • a sheet-attached dicing tape for sinter bonding includes the dicing tape and the above-described sinter bonding sheet according to the second aspect of the present invention.
  • the dicing tape has a laminated structure including a substrate and an adhesive layer, and the sinter bonding sheet is disposed on the adhesive layer of the dicing tape.
  • the dicing tape having such a configuration can be used to obtain a semiconductor chip with a chip-sized sintered bonding sheet in the process of manufacturing a semiconductor device.
  • the same effects as those described above for the composition for sinter bonding according to the first aspect of the present invention can be obtained.
  • An effect similar to that described above with respect to the second side sintered bonding sheet is obtained.
  • FIG. 7 illustrates a part of steps in a method of manufacturing a semiconductor device, which is performed using the sinter bonding sheet illustrated in FIG. 1.
  • FIG. 7 illustrates a part of steps in a method of manufacturing a semiconductor device, which is performed using the sinter bonding sheet illustrated in FIG. 1.
  • FIG. 7 illustrates a part of steps in a method of manufacturing a semiconductor device, which is performed using the sinter bonding sheet illustrated in FIG. 1.
  • FIG. 7 illustrates a part of steps in a method of manufacturing a semiconductor device, which is performed using a dicing tape with a sintering bonding sheet shown in FIG. 5.
  • FIG. 1 is a schematic partial cross-sectional view of a sinter bonding sheet 10 according to an embodiment of the present invention.
  • the sinter bonding sheet 10 is for use in sinter bonding between objects to be bonded, and includes an adhesive layer 11 formed by the sinter bonding composition of the present invention.
  • the adhesive layer 11 or the composition for sinter bonding forming the adhesive layer 11 at least includes conductive metal-containing sinterable particles, a thermally decomposable polymer binder, and a low boiling point binder.
  • Such a sintering bonding sheet 10 can be used, for example, to sinter and bond a semiconductor chip to a supporting substrate while making an electrical connection with the supporting substrate in the process of manufacturing a semiconductor device. .
  • the sinterable particles contained in the sinter bonding sheet 10 or the adhesive layer 11 thereof are sinterable particles containing a conductive metal element.
  • a conductive metal element for example, gold, silver, copper, palladium, tin and nickel can be mentioned.
  • the constituent material of such sinterable particles include gold, silver, copper, palladium, tin, nickel, and an alloy of two or more metals selected from these groups.
  • the constituent material of the sinterable particles also include silver oxides and metal oxides such as copper oxide, palladium oxide and tin oxide.
  • the sinterable particles may be particles having a core-shell structure.
  • the sinterable particles may be particles of a core-shell structure having a core containing copper as a main component and a shell containing gold, silver or the like as a main component and covering the core.
  • the sinterable particles preferably include at least one selected from the group consisting of silver particles, copper particles, silver oxide particles, and copper oxide particles.
  • Silver particles and copper particles are preferable as sinterable particles from the viewpoint of achieving high conductivity and high thermal conductivity in the formed sintered layer.
  • silver particles are preferable because they are easy to handle.
  • the average particle diameter of the sinterable particles contained in the sinter bonding sheet 10 or the adhesive layer 11 thereof is 2 ⁇ m or less.
  • the average particle diameter of the sinterable particles is preferably 1.5 ⁇ m or less, more preferably 1 from the viewpoint of securing a good sinterability by realizing a low sintering temperature for the sinterable particles, etc. .2 ⁇ m or less, more preferably 1 ⁇ m or less, more preferably 700 nm or less, more preferably 500 nm or less.
  • the average particle diameter of the sinterable particles is preferably 70 nm or more, more preferably 100 nm, from the viewpoint of securing good dispersibility of the sinterable particles in the adhesive layer 11 or the composition for forming the same. It is above.
  • the average particle size of the sinterable particles can be determined based on the observations made using a scanning electron microscope (SEM).
  • the average particle diameter of the sinterable particles when the adhesive layer contains sinterable particles can be specifically determined by the following method. First, the adhesive layer containing the sinterable particles is subjected to ion polishing in a cooling environment to expose the cross section of the adhesive layer. Next, the exposed cross section is imaged using a field emission scanning electron microscope SU8020 (manufactured by Hitachi High-Technologies Corporation) to obtain a backscattered electron image as image data. As for the imaging condition, the acceleration voltage is 5 kV and the magnification is 50000 times. Next, automatic binarization processing is performed on the obtained image data using image analysis software ImageJ, and then the average particle diameter of the particles is calculated from the image data.
  • SEM scanning electron microscope
  • the content ratio of the sinterable particles in the adhesive layer 11 is, for example, 85% by mass or more, preferably 90 to 98% by mass, more preferably 92 to 98% by mass, and more preferably 94 to 98% by mass.
  • the ratio of particles having a particle diameter of 100 nm or less in the sinterable particles in the adhesive layer 11 is 80% by mass or more, preferably 85% by mass or more, and more preferably 90% by mass or more. That is, the ratio of particles having a particle diameter of more than 100 nm in the sinterable particles in the adhesive layer 11 is 20% by mass or less, preferably 15% by mass or less, more preferably 10% by mass or less.
  • the thermally decomposable polymer binder contained in the sheet 10 for sinter bonding or the adhesive layer 11 thereof is a binder component that can be pyrolyzed in the high temperature heating process for sinter bonding, and the sinter bonding is performed before the heating process. It is an element which contributes to holding of the sheet shape of the sheet 10 or the adhesive layer 11 thereof.
  • the thermally degradable polymer binder is a solid material at normal temperature (23 ° C.).
  • polycarbonate resin and an acrylic resin can be mentioned, for example.
  • a polycarbonate resin as a thermally decomposable polymer binder for example, an aliphatic polycarbonate comprising an aliphatic chain without containing an aromatic compound such as a benzene ring between carbonic acid ester groups (-O-CO-O-) in the main chain And aromatic polycarbonates containing an aromatic compound between carbonate groups (—O—CO—O—) in the main chain.
  • Aliphatic polycarbonates include, for example, polyethylene carbonate and polypropylene carbonate.
  • Aromatic polycarbonates include polycarbonates having a bisphenol A structure in the main chain.
  • acrylic resin as the thermally degradable polymer binder examples include polymers of acrylic acid ester and / or methacrylic acid ester having a linear or branched alkyl group having 4 to 18 carbon atoms.
  • (meth) acrylic represents “acrylic” and / or “methacrylic”.
  • alkyl group of (meth) acrylic acid ester for forming an acrylic resin as a thermally degradable polymer binder for example, methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, t-butyl group, Isobutyl group, amyl group, isoamyl group, hexyl group, heptyl group, cyclohexyl group, 2-ethylhexyl group, octyl group, isooctyl group, nonyl group, isononyl group, decyl group, isodecyl group, undecyl group, lauryl group, tridecyl group Tetradecyl group, stearyl group, and octadecyl group.
  • the acrylic resin as the thermally degradable polymer binder may be a polymer containing a monomer unit derived from a monomer other than the (meth) acrylic acid ester.
  • Such other monomers include, for example, carboxy group-containing monomers, acid anhydride monomers, hydroxy group-containing monomers, sulfonic acid group-containing monomers, and phosphoric acid group-containing monomers.
  • carboxy group-containing monomer for example, acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid can be mentioned.
  • Examples of the acid anhydride monomer include maleic anhydride and itaconic anhydride.
  • Examples of the hydroxy group-containing monomer include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, Examples thereof include 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, and 4- (hydroxymethyl) cyclohexylmethyl (meth) acrylate.
  • sulfonic acid group-containing monomers examples include styrenesulfonic acid, allylsulfonic acid, 2- (meth) acrylamido-2-methylpropanesulfonic acid, (meth) acrylamidopropanesulfonic acid, sulfopropyl (meth) acrylate, and (meth And acryloyloxy naphthalene sulfonic acid.
  • the phosphoric acid group-containing monomer include 2-hydroxyethyl acryloyl phosphate.
  • the weight average molecular weight of the thermally degradable polymer binder is preferably 10000 or more.
  • the weight average molecular weight of the thermally degradable polymer binder is a value calculated by polystyrene conversion as measured by gel permeation chromatography (GPC).
  • the content ratio of the thermally degradable polymer binder in the adhesive layer 11 is preferably 0.5 to 10% by mass, and more preferably 0.8 to 8%, from the viewpoint of appropriately exerting the above-mentioned sheet shape holding function. %, More preferably 1 to 6% by mass.
  • the low boiling point binder contained in the sheet 10 for sinter bonding or the adhesive layer 11 thereof is measured at 23 ° C. using a dynamic viscoelasticity measuring apparatus (trade name “HAAKE MARS III”, manufactured by Thermo Fisher Scientific). Is a liquid or semi-liquid which exhibits a viscosity of 1 ⁇ 10 5 Pa ⁇ s or less. In this viscosity measurement, a parallel plate of 20 mm ⁇ is used as a jig, the gap between the plates is 100 ⁇ m, and the shear rate in rotational shear is 1 s ⁇ 1 .
  • Examples of the low boiling point binder contained in the adhesive layer 11 include terpene alcohols, alcohols excluding terpene alcohols, alkylene glycol alkyl ethers, and ethers excluding alkylene glycol alkyl ethers.
  • Terpene alcohols include, for example, isobornyl cyclohexanol, citronellol, geraniol, nerol, carveol, and ⁇ -terpineol.
  • alcohols other than terpene alcohols include, for example, pentanol, hexanol, heptanol, octanol, 1-decanol, ethylene glycol, diethylene glycol, propylene glycol, butylene glycol, and 2,4-diethyl-1,5 pentanediol.
  • alkylene glycol alkyl ethers include ethylene glycol butyl ether, diethylene glycol methyl ether, diethylene glycol ethyl ether, diethylene glycol butyl ether, diethylene glycol isobutyl ether, diethylene glycol hexyl ether, triethylene glycol methyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol dibutyl ether Diethylene glycol butyl methyl ether, diethylene glycol isopropyl methyl ether, triethylene glycol dimethyl ether, triethylene glycol butyl methyl ether, propylene glycol propyl ether, dipropylene glycol methyl Ether, dipropylene glycol ethyl ether, dipropylene glycol propyl ether, dipropylene glycol butyl ether, dipropylene glycol dimethyl ether, tripropylene glycol methyl ether and tripropylene glycol methyl
  • Ethers other than alkylene glycol alkyl ethers include, for example, ethylene glycol ethyl ether acetate, ethylene glycol butyl ether acetate, diethylene glycol ethyl ether acetate, diethylene glycol butyl ether acetate, dipropylene glycol methyl ether acetate, and ethylene glycol phenyl ether.
  • the low boiling point binder contained in the adhesive layer 11 one type of low boiling point binder may be used, or two or more types of low boiling point binder may be used. From the viewpoint of stability at normal temperature, terpene alcohols are preferable as the low boiling point binder contained in the adhesive layer 11, and isobornyl cyclohexanol is more preferable.
  • the sinter bonding sheet 10 or the adhesive layer 11 thereof may contain, for example, a plasticizer and the like in addition to the above components.
  • the thickness of the adhesive layer 11 at 23 ° C. is preferably 5 ⁇ m or more, more preferably 10 ⁇ m or more, and preferably 100 ⁇ m or less, more preferably 80 ⁇ m or less.
  • the viscosity at 70 ° C. of the adhesive layer 11 and the composition for sintering and joining that make up the adhesive layer 11 is, for example, 5 ⁇ 10 3 to 1 ⁇ 10 7 Pa ⁇ s, preferably 1 ⁇ 10 4 to 1 ⁇ 10 6 It is Pa ⁇ s.
  • the porosity of the pressure-sensitive adhesive layer 11 and the composition for sintering and bonding forming the adhesive layer 11 is preferably 10% or less, more preferably 8% or less, more preferably 6% or less, more preferably 4% or less.
  • the adhesive layer 11 or the composition for sinter bonding forming the same has a porosity after sintering including a heating step at 300 ° C. for 2.5 minutes under an applied pressure of 10 MPa (ie, the sintering
  • the porosity of the sintered layer formed from the adhesive layer 11 is preferably 10% or less, more preferably 8% or less, more preferably 6% or less, more preferably 4% or less.
  • the sheet 10 for sintering bonding mixes the above-mentioned each component in a solvent, for example, prepares a varnish, applies the said varnish on the separator as a base material, forms a coating film, and its coating film Can be made by drying.
  • An organic solvent or alcohol solvent can be used as a solvent for varnish preparation.
  • Organic solvents include, for example, dimethylformamide, dimethylacetamide, N-methylpyrrolidone, acetone, methyl ethyl ketone, cyclohexanone, toluene, and xylene.
  • alcohol solvent for example, ethylene glycol, diethylene glycol, 1,2-propanediol, 1,3-propanediol, 1,2-butanediol, 1,3-butanediol, 1,4-butanediol, 2-butene
  • examples include -1,4-diol, 1,2,6-hexanetriol, glycerin, octanediol, 2-methyl-2,4-pentanediol, and terpineol.
  • polyethylene terephthalate (PET) film As a substrate or separator, polyethylene terephthalate (PET) film, polyethylene film, polypropylene film, and various plastic films surface-coated with a release agent (for example, a fluorine-based release agent or a long chain alkyl acrylate release agent) Paper etc. can be used.
  • a release agent for example, a fluorine-based release agent or a long chain alkyl acrylate release agent
  • Paper etc. can be used for application of the varnish onto the substrate.
  • a die coater, a gravure coater, a roll coater, a reverse coater, a comma coater, or a pipe doctor coater can be used.
  • the drying temperature of the coating is, for example, 70 to 160 ° C.
  • the drying time of the coating is, for example, 1 to 5 minutes.
  • FIGS. 2 to 4 show a part of the steps of the semiconductor device manufacturing method which is performed using the sinter bonding sheet 10.
  • a sheet 10 for sintering and bonding and a plurality of semiconductor chips C are prepared.
  • the sinter bonding sheet 10 has the adhesive layer 11 of the above-described configuration made of the sinter bonding composition of the present invention, and a release liner L is provided on one side thereof.
  • Each of the plurality of semiconductor chips C is one in which a predetermined semiconductor element is already formed, and is fixed on the adhesive surface T1a of the chip fixing tape T1.
  • a planar electrode (not shown) is already formed as an external electrode on the surface (upper surface in FIG. 2) on the side to which the sinter bonding sheet 10 is bonded.
  • the thickness of the flat electrode is, for example, 10 to 1000 nm.
  • This flat electrode is made of, for example, silver.
  • the flat electrode may be laminated on a titanium thin film formed on the surface of the semiconductor chip.
  • the thickness of the titanium thin film is, for example, 10 to 1000 nm.
  • the planar electrode and the titanium thin film can be formed, for example, by vapor deposition. Further, on the other surface (lower surface in FIG. 2) of each semiconductor chip C, other electrode pads and the like (not shown) are formed as necessary.
  • the sintering bonding sheet 10 is bonded to the plurality of semiconductor chips C.
  • the sintering bonding sheet 10 to the adhesive layer 11 are bonded to a plurality of semiconductor chips C while the sintering bonding sheet 10 is pressed from the release liner L side to the semiconductor chip C side.
  • a press means, a pressure bonding roll is mentioned, for example.
  • the lamination temperature is, for example, 50 to 90 ° C.
  • the load for lamination is, for example, 0.01 to 5 MPa.
  • the semiconductor chip C is temporarily fixed to the support substrate S (temporary fixing step). Specifically, for example, using a chip mounter, the semiconductor chip C with a sheet for sintering bonding is pressed against the supporting substrate S via the sheet for sintering bonding 10 and temporarily fixed.
  • the support substrate S for example, an insulating circuit board with a surface such as a copper wiring, and a lead frame can be mentioned.
  • the chip mounting location on the support substrate S may be a base surface such as a copper wiring or a lead frame, or may be the surface of a plating film formed on the base surface.
  • the temperature condition for temporary fixation is, for example, 50 to 90 ° C., which is a temperature range including 70 ° C. and its vicinity
  • the load condition for pressing is, for example, 0.01 to 5 MPa
  • the bonding time is, for example 0.01 to 5 seconds.
  • the semiconductor chip C is bonded to the support substrate S through a high temperature heating process (sinter bonding step).
  • the low boiling point binder in the adhesive layer 11 is volatilized between the support substrate S and the semiconductor chip C by undergoing a predetermined high temperature heating process, and the thermally decomposable polymer binder is thermally decomposed. Volatilize and sinter the conductive metal of the sinterable particles.
  • the sintered layer 12 is formed between the support substrate S and each semiconductor chip C, and the semiconductor chip C is joined to the support substrate S while the electrical connection with the support substrate S side is taken. It will be.
  • the temperature conditions of the sinter bonding are, for example, 200 to 400 ° C.
  • the pressure condition of the sinter bonding is, for example, 40 MPa or less, preferably 20 MPa or less, more preferably 15 MPa or less, more preferably 12 MPa or less, more preferably 10 MPa or less.
  • the bonding time of the sinter bonding is, for example, 0.3 to 300 minutes, preferably 0.5 to 240 minutes. For example, within the range of these conditions, a temperature profile and a pressure profile for carrying out the sinter bonding process are appropriately set.
  • the above-mentioned sinter bonding process can be performed using the apparatus which can perform heating and pressurization simultaneously. Such devices include, for example, flip chip bonders and parallel plate presses. Further, from the viewpoint of preventing oxidation of the metal involved in the sinter bonding, it is preferable that the present step be performed under a nitrogen atmosphere, under a reduced pressure, or under a reducing gas atmosphere.
  • the electrode pads (not shown) of the semiconductor chip C and the terminal portions (not shown) of the support substrate S are bonded if necessary. It electrically connects via the wire W (wire bonding process).
  • the wire connection between the electrode pad of the semiconductor chip C and the terminal portion of the support substrate S and the bonding wire W is realized by, for example, ultrasonic welding accompanied by heating.
  • As the bonding wire W for example, a gold wire, an aluminum wire, or a copper wire can be used.
  • the wire heating temperature in wire bonding is, for example, 80 to 250 ° C., preferably 80 to 220 ° C.
  • the heating time is a few seconds to a few minutes.
  • a sealing resin R for protecting the semiconductor chip C and the bonding wires W on the support substrate S is formed (sealing process).
  • the sealing resin R is formed by a transfer molding technique performed using a mold.
  • an epoxy resin can be used, for example.
  • the heating temperature for forming the sealing resin R is, for example, 165 to 185 ° C., and the heating time is, for example, 60 seconds to several minutes.
  • a post-curing step for completely curing the sealing resin R is performed after the main step.
  • the semiconductor device can be manufactured through the process of using the sinter bonding sheet 10.
  • FIG. 5 is a schematic cross-sectional view of a sheet with dicing tape X for sintering bonding according to an embodiment of the present invention.
  • the sheet-bonded dicing tape X for sintering bonding has a laminated structure including the above-described sheet 10 for sintering bonding and the dicing tape 20 according to an embodiment of the present invention, and the chip size is baked in the manufacture of a semiconductor device. It can be used to obtain a semiconductor chip with a bonding sheet.
  • the sheet-attached dicing tape X for sintering bonding has, for example, a disk shape having a size corresponding to the semiconductor wafer to be processed in the manufacturing process of the semiconductor device.
  • the dicing tape 20 has a laminated structure including the base 21 and the pressure-sensitive adhesive layer 22.
  • the base 21 of the dicing tape 20 is an element that functions as a support in the dicing tape 20 or the dicing tape X with a sheet for sintering bonding.
  • a plastic substrate such as a plastic film can be used as the substrate 21.
  • the constituent material of the plastic base include polyvinyl chloride, polyvinylidene chloride, polyolefin, polyester, polyurethane, polycarbonate, polyetheretherketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamide, polyphenyl sulfide, Aramid, fluororesin, cellulose resin, and silicone resin are mentioned.
  • polyolefin examples include low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolypropylene, polybutene, polymethylpentene, ethylene-
  • examples include vinyl acetate copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester copolymer, ethylene-butene copolymer, and ethylene-hexene copolymer.
  • Polyesters include, for example, polyethylene terephthalate (PET), polyethylene naphthalate, and polybutylene terephthalate (PBT).
  • the substrate 21 may be made of one type of material or may be made of two or more types of materials.
  • the base 21 may have a single layer structure or a multilayer structure.
  • the substrate 21 preferably has UV transparency.
  • the substrate 21 is a plastic film, it may be a non-oriented film, a uniaxially stretched film, or a biaxially stretched film.
  • the surface of the substrate 21 on the pressure-sensitive adhesive layer 22 side may be subjected to a treatment for enhancing the adhesion to the pressure-sensitive adhesive layer 22.
  • a treatment for enhancing the adhesion to the pressure-sensitive adhesive layer 22 include, for example, physical treatments such as corona discharge treatment, plasma treatment, sand mat treatment treatment, ozone exposure treatment, flame exposure treatment, high piezoelectric bombardment treatment, and ionizing radiation treatment, and chemistry such as chromic acid treatment. Treatment, as well as primer treatment.
  • the thickness of the substrate 21 is preferably 40 ⁇ m or more, more preferably from the viewpoint of securing the strength for the substrate 21 to function as a support in the dicing tape 20 or the dicing tape X with a sheet for sintering bonding. It is 50 ⁇ m or more, more preferably 55 ⁇ m or more, and more preferably 60 ⁇ m or more. Further, from the viewpoint of achieving appropriate flexibility in the dicing tape 20 to the sheet-attached dicing tape X for sintering bonding, the thickness of the base 21 is preferably 200 ⁇ m or less, more preferably 180 ⁇ m or less, and more preferably Is 150 ⁇ m or less.
  • the adhesive layer 22 of the dicing tape 20 contains an adhesive.
  • the pressure-sensitive adhesive for example, an acrylic pressure-sensitive adhesive or a rubber-based pressure-sensitive adhesive containing an acrylic polymer as a base polymer can be used.
  • the pressure-sensitive adhesive may be a pressure-sensitive adhesive (pressure-sensitive adhesive with reduced adhesive strength) capable of intentionally reducing the adhesive strength by an external action such as heating or radiation irradiation, or the external action In some cases, it may be a pressure-sensitive adhesive (pressure-sensitive adhesive non-reducing pressure-sensitive adhesive) with little or no decrease in adhesion.
  • mold adhesive a radiation-curable adhesive (pressure-curable adhesive) and a heat-foaming type adhesive are mentioned, for example.
  • the non-adhesive force reducing type pressure sensitive adhesive include a pressure sensitive type pressure sensitive adhesive.
  • the acrylic polymer as a base polymer of the acrylic pressure-sensitive adhesive preferably has a mass of monomer units derived from an acrylic acid alkyl ester and / or a methacrylic acid alkyl ester. Contain as the largest monomer unit in proportion.
  • Examples of (meth) acrylic acid alkyl esters for forming monomer units of acrylic polymers include (meth) acrylic acid alkyl esters having a linear or branched alkyl group, and (meth) acrylic acid cycloalkyl esters Can be mentioned.
  • Examples of (meth) acrylic acid alkyl esters include methyl ester of (meth) acrylic acid, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, iso Pentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, hexadecyl ester, It includes octadecyl ester or eicosyl ester.
  • Examples of (meth) acrylic acid cycloalkyl ester include cyclopentyl ester or cyclohexyl ester of (meth) acrylic acid.
  • the (meth) acrylic acid alkyl ester for the acrylic polymer one kind of (meth) acrylic acid alkyl ester may be used, or two or more kinds of (meth) acrylic acid alkyl ester may be used.
  • the proportion of the (meth) acrylic acid alkyl ester in all the monomer components for forming the acrylic polymer allows the pressure-sensitive adhesive layer 22 to properly express basic properties such as adhesiveness by the (meth) acrylic acid alkyl ester. Is, for example, 50% by mass or more.
  • the acrylic polymer may contain a monomer unit derived from another monomer copolymerizable with the (meth) acrylic acid alkyl ester, in order to modify its cohesion and heat resistance.
  • monomers include, for example, carboxy group-containing monomers, acid anhydride monomers, hydroxy group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamide, and acrylonitrile.
  • Examples of carboxy group-containing monomers include acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid and crotonic acid.
  • Anhydride monomers include, for example, maleic anhydride and itaconic anhydride.
  • Examples of the hydroxy group-containing monomer include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, Mention may be made of 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, and 4- (hydroxymethyl) cyclohexylmethyl (meth) acrylate.
  • sulfonic acid group-containing monomers examples include styrenesulfonic acid, allylsulfonic acid, 2- (meth) acrylamido-2-methylpropanesulfonic acid, (meth) acrylamidopropanesulfonic acid, sulfopropyl (meth) acrylate, and (meth And acryloyloxy naphthalene sulfonic acid.
  • phosphoric acid group-containing monomers include 2-hydroxyethyl acryloyl phosphate.
  • the other monomer for the acrylic polymer one kind of monomer may be used, or two or more kinds of monomers may be used.
  • the proportions of monomers other than (meth) acrylic acid alkyl ester in all monomer components for forming an acrylic polymer are suitable for the adhesive layer 22 with the basic characteristics such as adhesiveness due to the (meth) acrylic acid alkyl ester.
  • For expression for example, 50% by mass or less.
  • the acrylic polymer may contain a monomer unit derived from a polyfunctional monomer copolymerizable with the (meth) acrylic acid alkyl ester to form a crosslinked structure in the polymer backbone.
  • polyfunctional monomers for example, hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, Pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate, glycidyl (meth) acrylate, polyester (meth) And acrylates and urethane (meth) acrylates.
  • polyfunctional monomer for acrylic polymers one kind of polyfunctional monomer may be used, or two or more kinds of polyfunctional monomers may be used.
  • the ratio of the polyfunctional monomer in all the monomer components for forming the acrylic polymer is, for example, the case where the adhesive layer 22 properly exhibits basic characteristics such as adhesiveness by the (meth) acrylic acid alkyl ester, for example It is 40 mass% or less.
  • An acrylic polymer can be obtained by polymerizing a raw material monomer for forming it.
  • polymerization techniques include solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization.
  • the dicing tape 20 to the adhesive layer 22 in the sheet-attached dicing tape X for sintering bonding is used, the dicing tape 20 to the adhesive layer 22 in the sheet-attached dicing tape X for sintering bonding
  • the low molecular weight component of is preferably smaller, and the number average molecular weight of the acrylic polymer is, for example, 100,000 or more.
  • the pressure-sensitive adhesive layer 22 or a pressure-sensitive adhesive for making the same may contain, for example, an external crosslinking agent in order to increase the number average molecular weight of a base polymer such as an acrylic polymer.
  • an external crosslinking agent for reacting with a base polymer such as an acrylic polymer to form a crosslinked structure polyisocyanate compounds, epoxy compounds, aziridine compounds, and melamine based crosslinking agents can be mentioned.
  • the content of the external crosslinking agent in the pressure-sensitive adhesive layer 22 or the pressure-sensitive adhesive for making the same is, for example, 5 parts by mass or less with respect to 100 parts by mass of the base polymer.
  • the pressure-sensitive adhesive layer 22 may be a radiation-curable pressure-sensitive adhesive layer in which the degree of crosslinking of the irradiated portion is increased by receiving the irradiation of radiation such as ultraviolet light and the adhesion is lowered.
  • the radiation-curable pressure-sensitive adhesive for forming such a pressure-sensitive adhesive layer includes, for example, a radiation-polymerizable material having a base polymer such as the above-mentioned acrylic polymer and a functional group such as a radiation-polymerizable carbon-carbon double bond. And an additive-type radiation-curable pressure-sensitive adhesive containing a monomer component or an oligomer component of
  • urethane (meth) acrylate for example, urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxy penta (Meth) acrylate, dipentaerythritol hexa (meth) acrylate, and 1,4-butanediol di (meth) acrylate.
  • urethane (meth) acrylate for example, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxy penta (Meth) acrylate, dipentaerythritol hexa (meth)
  • the radiation polymerizable oligomer component examples include various oligomers such as urethane type, polyether type, polyester type, polycarbonate type and polybutadiene type, and those having a molecular weight of about 100 to 30000 are suitable.
  • the content of the radiation polymerizable monomer component or oligomer component in the pressure-sensitive adhesive layer 22 or the radiation-curable pressure-sensitive adhesive for making the same is determined within a range which can appropriately reduce the adhesion of the formed pressure-sensitive adhesive layer 22. And, for example, 40 to 150 parts by mass with respect to 100 parts by mass of the base polymer such as an acrylic polymer.
  • the addition type radiation-curable pressure-sensitive adhesive for example, the one disclosed in JP-A-60-196956 may be used.
  • the radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 22 includes, for example, a base having a functional group such as a radiation-polymerizable carbon-carbon double bond at the polymer side chain, in the polymer main chain, at the polymer main chain terminal Mention may also be made of intrinsic radiation-curable adhesives containing polymers. Such an integral type radiation-curable pressure-sensitive adhesive is suitable for suppressing unintended changes in adhesion properties caused by the movement of low molecular weight components in the pressure-sensitive adhesive layer 22 to be formed.
  • a base polymer contained in the intrinsic type radiation-curable pressure-sensitive adhesive one having an acrylic polymer as a basic skeleton is preferable.
  • the acrylic polymer forming such a basic skeleton the above-mentioned acrylic polymer can be adopted.
  • a method for introducing a radiation-polymerizable carbon-carbon double bond into an acrylic polymer for example, a raw material monomer containing a monomer having a predetermined functional group (first functional group) is copolymerized to obtain an acrylic polymer.
  • a compound having a predetermined functional group (second functional group) capable of causing a reaction with the first functional group (second functional group) and a radiation-polymerizable carbon-carbon double bond is carbon-carbon
  • a method of subjecting an acrylic polymer to a condensation reaction or an addition reaction while maintaining the radiation polymerizable property of a double bond can be mentioned.
  • Examples of combinations of the first functional group and the second functional group include a carboxy group and an epoxy group, an epoxy group and a carboxy group, a carboxy group and an aziridyl group, an aziridyl group and a carboxy group, a hydroxy group and an isocyanate group, and an isocyanate group. And hydroxy groups are mentioned. Among these combinations, a combination of a hydroxy group and an isocyanate group and a combination of an isocyanate group and a hydroxy group are preferable from the viewpoint of the ease of reaction tracking. In addition, although it is technically difficult to produce a polymer having a highly reactive isocyanate group, the first functional group on the acrylic polymer side is preferable from the viewpoint of preparation or availability of the acrylic polymer.
  • the group is a hydroxy group and the second functional group is an isocyanate group.
  • the isocyanate compound having both the radiation polymerizable carbon-carbon double bond and the isocyanate group which is the second functional group for example, methacryloyl isocyanate, 2-methacryloyl oxyethyl isocyanate, and m-isopropenyl- ⁇ , ⁇ -dimethylbenzyl isocyanate.
  • an acrylic polymer with a 1st functional group what contains the monomer unit derived from said hydroxy-group containing monomer is suitable, and 2-hydroxyethyl vinyl ether, 4-hydroxy butyl vinyl ether, diethylene glycol is preferable. Those containing monomer units derived from ether compounds such as monovinyl ether are also suitable.
  • the radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 22 preferably contains a photopolymerization initiator.
  • the photopolymerization initiator include ⁇ -ketol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds, and camphors. These include quinones, halogenated ketones, acyl phosphinoxides, and acyl phosphonates.
  • Examples of ⁇ -ketol compounds include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, ⁇ -hydroxy- ⁇ , ⁇ ′-dimethylacetophenone, 2-methyl-2-hydroxypro Piophenone and 1-hydroxycyclohexyl phenyl ketone can be mentioned.
  • Examples of acetophenone compounds include methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, and 2-methyl-1- [4- (methylthio) -phenyl] -2-morpholino. Propane-1 is mentioned.
  • benzoin ether compounds include benzoin ethyl ether, benzoin isopropyl ether, and anisoin methyl ether.
  • ketal compounds include benzyl dimethyl ketal.
  • aromatic sulfonyl chloride compounds include 2-naphthalene sulfonyl chloride.
  • photoactive oxime compounds include 1-phenone-1,2-propanedione-2- (O-ethoxycarbonyl) oxime.
  • benzophenone compounds include benzophenone, benzoylbenzoic acid, and 3,3'-dimethyl-4-methoxybenzophenone.
  • Thioxanthone compounds include, for example, thioxanthone, 2-chlorothioxanthone, 2-methyl thioxanthone, 2,4-dimethyl thioxanthone, isopropyl thioxanthone, 2,4-dichloro thioxanthone, 2,4-diethyl thioxanthone, and 2,4-diisopropyl.
  • Thioxanthone is mentioned.
  • the content of the photopolymerization initiator in the radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 22 is, for example, 0.05 to 20 parts by weight with respect to 100 parts by weight of the base polymer such as an acrylic polymer.
  • the pressure-sensitive adhesive layer 22 or the pressure-sensitive adhesive for producing the same may contain, in addition to the above components, an additive such as a crosslinking accelerator, a tackifier, an antiaging agent, or a colorant.
  • the colorant may be a compound that is colored upon exposure to radiation. Such compounds include, for example, leuco dyes.
  • the thickness of the pressure-sensitive adhesive layer 22 is, for example, 1 to 50 ⁇ m from the viewpoint of the balance of adhesion to the sinter bonding sheet 10 before and after radiation curing of the pressure-sensitive adhesive layer 22.
  • the sheet-with-sintered bonding dicing tape X having the above-described configuration can be manufactured, for example, as follows.
  • the resin base material 21 is manufactured by a film forming method such as a calendar film forming method, a casting method in an organic solvent, a closed system inflation extrusion method, a T-die extrusion method, a coextrusion method, and the like. be able to.
  • the pressure-sensitive adhesive layer 22 is prepared by applying a pressure-sensitive adhesive composition on a substrate 21 or a predetermined separator (that is, a release liner) after preparing the pressure-sensitive adhesive composition for forming the pressure-sensitive adhesive layer 22.
  • It can be formed by forming a layer and, if necessary, drying the pressure-sensitive adhesive composition layer (at this time, heat crosslinking as necessary).
  • Examples of the method for applying the pressure-sensitive adhesive composition include roll coating, screen coating, and gravure coating.
  • the temperature for drying the pressure-sensitive adhesive composition layer is, for example, 80 to 150 ° C., and the time is, for example, 0.5 to 5 minutes.
  • a varnish for forming the sheet for sintering and joining 10 is prepared, and the varnish is applied onto the separator as a substrate Can be applied to form a coating, and the coating can be dried.
  • the sheet 10 for sintering bonding is attached by pressure bonding to the adhesive layer 22 side of the dicing tape 20, for example.
  • the bonding temperature is, for example, 30 to 50.degree.
  • the bonding pressure linear pressure
  • the pressure-sensitive adhesive layer 22 is a radiation-curable pressure-sensitive adhesive layer as described above, for example, the pressure-sensitive adhesive layer 22 may be irradiated with radiation such as ultraviolet light from the side of the base 21, for example.
  • the irradiation dose is, for example, 50 to 500 mJ / cm 2 , preferably 100 to 300 mJ / cm 2 .
  • the area (irradiated area D) where irradiation as the adhesive force reduction measure of the pressure-sensitive adhesive layer 22 is performed in the sheet-attached dicing tape X for sintering and bonding is, for example, within the sheet bonding area for sintering bonding in the pressure-sensitive adhesive layer 22. It is an area excluding the peripheral portion.
  • the dicing tape X with a sheet for sintering bonding shown in FIG. 5 can be manufactured.
  • a separator (not shown) may be provided on the dicing tape X with a sheet for sintering bonding so as to cover the pressure-sensitive adhesive layer 22 with the sheet 10 for sintering bonding.
  • This separator is an element for protecting the pressure-sensitive adhesive layer 22 and the sinter bonding sheet 10 from being exposed, and is separated from the film before using the sinter bonding sheet-attached dicing tape X.
  • PET polyethylene terephthalate
  • a release agent for example, a fluorine-based release agent or a long chain alkyl acrylate release agent
  • FIG. 6 shows a partial process of a semiconductor device manufacturing method performed by using a dicing tape X with a sheet for sintering bonding.
  • the semiconductor wafer 30 is bonded onto the sinter bonding sheet 10 of the sinter bonding sheet-attached dicing tape X. Specifically, the semiconductor wafer 30 is pressed to the sintering bonding sheet 10 side of the sintering bonding sheet-attached dicing tape X by a pressure bonding roll or the like, and the sintering bonding sheet-attached dicing tape X or for sintering bonding It is stuck to the sheet 10.
  • the semiconductor wafer 30 is one in which a plurality of semiconductor elements are already formed, and the surface (the lower surface in FIG.
  • a flat electrode (not shown) as an external electrode. Is formed.
  • the thickness of the flat electrode is, for example, 10 to 1000 nm.
  • the flat electrode is made of, for example, silver.
  • the flat electrode may be laminated on a titanium thin film formed on the surface of the semiconductor wafer.
  • the thickness of the titanium thin film is, for example, 10 to 1000 nm.
  • the planar electrode and the titanium thin film can be formed, for example, by vapor deposition. Further, on the other surface (upper surface in FIG. 6) of the semiconductor wafer 30, other electrode pads and the like (not shown) are formed as needed for each semiconductor element.
  • the bonding temperature is, for example, 50 to 90 ° C.
  • the load for bonding is, for example, 0.01 to 10 MPa.
  • the pressure-sensitive adhesive layer 22 in the sheet-attached dicing tape X for sintering bonding is a radiation-curable pressure-sensitive adhesive layer
  • baking is performed instead of the above-described radiation irradiation in the manufacturing process of the sheet-attached dicing tape X for sintering bonding.
  • the adhesive layer 22 may be irradiated with radiation such as ultraviolet light from the side of the base 21.
  • the irradiation dose is, for example, 50 to 500 mJ / cm 2 , preferably 100 to 300 mJ / cm 2 .
  • the region (shown as the irradiation region D in FIG. 5) where radiation irradiation is performed as the adhesive force reduction measure of the pressure-sensitive adhesive layer 22 in the sheet-attached dicing tape X for sintering bonding is, for example, for sintering bonding in the pressure-sensitive adhesive layer 22. It is an area
  • dicing is performed on the semiconductor wafer 30. Specifically, in a state in which the semiconductor wafer 30 is held by the dicing tape X with a sheet for sintering bonding, the semiconductor wafer 30 is diced using a rotating blade such as a dicing apparatus and separated into semiconductor chip units. (In the figure, the cut portion is schematically represented by a thick line). As a result, the semiconductor chip C with the chip-sized sintered bonding sheet 10 is formed.
  • the semiconductor chip with a sheet for sintering bonding is then carried out Pick up C from the dicing tape 20 (pickup process). For example, with regard to the semiconductor chip C with a sheet for sintering and bonding to be picked up, after raising the pin member (not shown) of the pickup mechanism at the lower side of the dicing tape 20 in the figure, pushing up through the dicing tape 20 It adsorbs and holds with a tool (not shown).
  • FIG. 3A the semiconductor chip C is temporarily fixed to the support substrate S (temporary fixing step), and as shown in FIG. 3B, the high temperature for sintering bonding
  • the semiconductor chip C is bonded to the support substrate S through the heating process (sinter bonding step).
  • FIGS. 3A and 3 relate to the temporary fixing step and the sintering bonding step in the semiconductor device manufacturing method performed using the sheet for sintering bonding 10. Same as described above with reference to (b).
  • FIG. 4A the electrode pads (not shown) of the semiconductor chip C and the terminal portions (not shown) of the support substrate S are electrically connected through the bonding wires W as necessary. Connect to (wire bonding process).
  • FIG. 4B a sealing resin R for protecting the semiconductor chip C and the bonding wires W on the support substrate S is formed (sealing process).
  • FIG. 4A and FIG. 4 (with respect to the wire bonding step and the sealing step in the semiconductor device manufacturing method performed by using the sintering bonding sheet 10. as described above with reference to b).
  • the semiconductor device can be manufactured through the process using the dicing tape X with a sheet for sintering bonding.
  • the adhesive layer 11 of the sinter-bonding sheet 10 or the composition for sinter-bonding comprising the same has an average particle diameter of 2 ⁇ m or less as described above for the conductive metal-containing sinter particles contained therein. It has a particle size distribution configuration in which the proportion of particles having a particle size of 100 nm or less is 80% by mass or more. The same proportion is, as described above, preferably 85% by mass or more, more preferably 90% by mass or more. Such a particle size distribution configuration of the sinterable particles is suitable for forming a high density sintered layer 12 by sintering under low load conditions from the sinter bonding composition that constitutes the adhesive layer 11.
  • the composition when the content ratio of the sinterable particles in the composition for sinter bonding forming the adhesive layer 11 is as large as, for example, 85 mass%, the composition It is considered that particles having a particle size of 100 nm or less and particles having a particle size of more than 100 nm in a substance have a dense packing state and the total contact area between particles tends to be large. The larger the total contact area between the sinterable particles, the lower the load conditions such as pressure conditions for appropriately integrating the sinterable particles by sintering.
  • the adhesive layer 11 suitable for realizing the sinter bonding by the high density sinter layer under the low load condition or the composition for sinter bonding comprising the same has low high joint reliability due to the high density sinter layer 12 Suitable for realization in sintering process under load conditions.
  • seat 10 for sintering joining and the composition for sintering joining which comprise this are suitable for implement
  • Such a sintering bonding sheet 10 is preferable from the viewpoint of improving the production efficiency of the product to be manufactured.
  • the content ratio of the sinterable particles in the adhesive layer 11 of the sinter bonding sheet 10 or the composition for sinter bonding forming the same is preferably 90 to 98 mass%, more preferably 92 to 98 mass as described above. %, More preferably 94 to 98% by mass. Such a configuration is suitable for achieving high density of the sintered layer 12 to be formed.
  • the porosity of the pressure-sensitive adhesive layer 11 of the sinter bonding sheet 10 or the composition for sinter bonding forming the same is preferably 10% or less, more preferably 8% or less, more preferably 6% or less, as described above. More preferably, it is 4% or less.
  • the adhesive layer 11 of the sinter bonding sheet 10 or the composition for sinter bonding, which constitutes the void has undergone sintering under the conditions of 300 ° C., 10 MPa, and 2.5 minutes.
  • the rate is preferably 10% or less, more preferably 8% or less, more preferably 6% or less, more preferably 4% or less.
  • the adhesive layer 11 of the sinter bonding sheet 10 or the composition for sinter bonding comprising the same preferably comprises a pyrolyzable polymer binder together with the above-mentioned sinterable particles containing a conductive metal, as described above,
  • the weight average molecular weight of the thermally degradable polymer binder is preferably 10000 or more. According to these configurations, for example, the viscoelasticity of the thermally degradable polymer binder is used at the temporary fixing temperature in the above temporary fixing step, that is, at 50 to 90 ° C. which is a temperature range including 70 ° C. and the vicinity thereof. It is easy to ensure the cohesion of the adhesive layer 11, and hence to ensure the adhesive force of the adhesive layer 11.
  • the thermally decomposable polymer binder contained in the adhesive layer 11 of the sinter bonding sheet 10 or the composition for sinter bonding forming the same is preferably a polycarbonate resin and / or an acrylic resin.
  • a polycarbonate resin and an acrylic resin can be easily prepared as a polymer binder that decomposes and volatilizes at a temperature of about 300 ° C. Therefore, the configuration relates to the supporting substrate S and the semiconductor to be sintered and bonded using the sintering bonding sheet 10 It is suitable for reducing the organic residue in the sintered layer 12 formed between the chips C. As the organic residue in the sintered layer 12 is smaller, the sintered layer 12 tends to be strong, and thus, it is easy to obtain excellent bonding reliability in the sintered layer 12.
  • the sinter bonding sheet 10 supplies the sinter bonding material in the form of a sheet which can be easily produced with a uniform thickness, according to the sinter bonding sheet 10, the supporting substrate S and the semiconductor chip C Can be joined by the sintered layer 12 of uniform thickness.
  • the sinter bonding by the sinter layer 12 with a uniform thickness is suitable for realizing high bonding reliability of the semiconductor chip C with respect to the support substrate S.
  • the sinter bonding sheet 10 supplies the sinter bonding material in the form of a sheet that is hard to fluidize, sintering from between the supporting substrate S and the semiconductor chip C, which are objects to be bonded, is performed. It is suitable for sintering and joining the semiconductor chip C to the supporting substrate S while suppressing the protrusion of the metal and the creeping of the sintered metal to the side surface of the semiconductor chip C. Such suppression of protrusion and creeping is preferable in order to improve the yield in a semiconductor device involving sintering and bonding.
  • Example 1 53.78 parts by mass of first silver particles (average particle diameter 60 nm, particle size distribution 5 to 100 nm, manufactured by Dowa Electronics Co., Ltd.) as sinterable particles, and second silver particles (average particle diameter as sinterable particles) Particle size: 1100 nm, particle size distribution: 400 to 5000 nm, 5.97 parts by mass of Mitsui Metal Mining Co., Ltd., polycarbonate resin as a thermally degradable polymer binder (trade name "QPAC40", weight average molecular weight is 150000, normal temperature Solid, 0.87 parts by mass of Empower Materials, and 3.47 parts by mass of isobornyl cyclohexanol (trade name "Telsorb MTPH", liquid at normal temperature, manufactured by Nippon Terpene Chemical Industry Co., Ltd.) as a low boiling point binder , 35.91 parts by mass of methyl ethyl ketone as a solvent, a hybrid mixer (trade name "HM-500", Key Co.,
  • the Nsu Ltd. were mixed using its stirring mode, to prepare a varnish.
  • the stirring time was 3 minutes.
  • the obtained varnish is applied to a release-treated film (trade name "MRA 50", manufactured by Mitsubishi Resins Co., Ltd.) and then dried to form a 40 ⁇ m thick adhesive layer for sinter bonding, ie, sinter bonding
  • a sheet of 40 ⁇ m in thickness was formed.
  • the drying temperature was 110 ° C., and the drying time was 3 minutes.
  • a sinter-bonding sheet of Example 1 having a pressure-sensitive adhesive layer containing sinterable particles, a thermally-degradable polymer binder, and a low boiling point binder was produced.
  • the content ratio of the sinterable particles in the sheet for sinter bonding (composition for sinter bonding) of Example 1 is 93.2 mass%, and the ratio of particles having a particle diameter of 100 nm or less in the sinterable particles is 90. It is mass%.
  • the compositions relating to the sintered bonding sheet of Example 1 are listed in Table 1 (the same applies to Examples and Comparative Examples described later. In Table 1, units of numerical values representing the compositions are relative to each other. “Parts by mass”).
  • Example 2 61.29 parts by mass of first silver particles (average particle diameter 60 nm, particle size distribution 5 to 100 nm, manufactured by Dowa Electronics Co., Ltd.) as sinterable particles, and second silver particles (average particle diameter as sinterable particles) 6.81 parts by mass of particle diameter 1100 nm, particle diameter distribution 400-5000 nm, Mitsui Metal Mining Co., Ltd., polycarbonate resin as a thermally degradable polymer binder (trade name "QPAC40", weight average molecular weight 150000, at normal temperature Solid, Empower Materials Co., Ltd.
  • QPAC40 thermally degradable polymer binder
  • the obtained varnish is applied to a release-treated film (trade name "MRA 50", manufactured by Mitsubishi Resins Co., Ltd.) and then dried to form a 40 ⁇ m thick adhesive layer for sinter bonding, ie, sinter bonding
  • a sheet of 40 ⁇ m in thickness was formed.
  • the drying temperature was 110 ° C., and the drying time was 3 minutes.
  • a sinter bonding sheet of Example 2 having a pressure-sensitive adhesive layer containing sinterable particles, a thermally degradable polymer binder, and a low boiling point binder was produced.
  • the content ratio of the sinterable particles in the sheet for sinter bonding (composition for sinter bonding) of Example 2 is 95% by mass, and the ratio of particles having a particle diameter of 100 nm or less in the sinterable particles is 90% by mass It is.
  • Example 3 Third silver particles (average particle size 300 nm, particle size distribution 145-1700 nm) instead of 6.81 parts by mass of second silver particles (average particle size 1100 nm, particle size distribution 400-5000 nm, manufactured by Mitsui Mining & Smelting Co., Ltd.)
  • a sheet for sintering and bonding of Example 3 was produced in the same manner as the sheet for sintering and bonding of Example 2 except that 6.81 parts by mass of Dowa Electronics Co., Ltd. was used.
  • the content ratio of the sinterable particles in the sinter bonding sheet (composition for sinter bonding) of Example 3 is 95 mass%, and the ratio of particles having a particle diameter of 100 nm or less in the sinterable particles is 90 mass%. It is.
  • Example 4 Changing the blending amount of the first silver particles (average particle diameter 60 nm, particle diameter distribution 5 to 100 nm, manufactured by Dowa Electronics Co., Ltd.) to 61.29 parts by mass to 68.1 parts by mass, and A sheet for sintering and bonding of Example 4 was produced in the same manner as the sheet for sintering and bonding of Example 2 except that silver particles were not used.
  • the content ratio of the sinterable particles in the sheet for sinter bonding (composition for sinter bonding) of Example 4 is 95 mass%, and the ratio of particles having a particle diameter of 100 nm or less in the sinterable particles is 100 mass%. It is.
  • Example 5 Fourth silver particle (average particle size 20 nm, particle size distribution 1 to 50 nm, manufactured by Dowa Electronics Corporation) 61 instead of 61.29 parts by mass of the first silver particle and 6.81 parts by mass of the second silver particle
  • a sinter bonding sheet of Example 5 was produced.
  • the content ratio of sinterable particles in the sheet for sinter bonding (composition for sinter bonding) of Example 5 is 95 mass%, and the ratio of particles having a particle diameter of 100 nm or less in the sinterable particles is 90 mass%. It is.
  • Example 6 Changing the blending amount of the first silver particles (average particle diameter 60 nm, particle size distribution 5 to 100 nm, manufactured by Dowa Electronics Co., Ltd.) to 53.78 parts by mass to 35.86 parts by mass, and Sintering of Example 1 except that in addition to the second silver particles, 17.93 parts by mass of fourth silver particles (average particle diameter 20 nm, particle diameter distribution 1 to 50 nm, manufactured by Dowa Electronics Co., Ltd.) were used In the same manner as the bonding sheet, a sinter bonding sheet of Example 6 was produced.
  • the content ratio of sinterable particles in the sheet for sinter bonding (composition for sinter bonding) of Example 6 is 93.2 mass%, and the ratio of particles having a particle diameter of 100 nm or less in the sinterable particles is 90. It is mass%.
  • Comparative Example 1 Changing the blending amount of the first silver particles (average particle diameter 60 nm, particle diameter distribution 5 to 100 nm, manufactured by Dowa Electronics Co., Ltd.) to 53.78 parts by mass to 35.86 parts by mass; The amount of the silver particles (average particle diameter: 1100 nm, particle diameter distribution: 400 to 5000 nm, manufactured by Mitsui Kinzoku Mining Co., Ltd.) was changed to 5.3.9 parts by mass to 23.9 parts by mass, except that A sheet for sintering and bonding of Comparative Example 1 was produced in the same manner as the sheet for sintering and bonding.
  • the content ratio of the sinterable particles in the sinter bonding sheet of Comparative Example 1 is 93.2% by mass, and the ratio of particles having a particle diameter of 100 nm or less in the sinterable particles is 60% by mass.
  • Comparative Example 2 First silver particles (average particle diameter 60 nm, particle size distribution 5 to 100 nm, manufactured by Dowa Electronics Co., Ltd.) as sinterable particles and 34.05 parts by mass, and third silver particles (average particle diameter as sinterable particles) Particle size 300 nm, particle size distribution 145-1700 nm, Dowa Electronics Co., Ltd.
  • polycarbonate resin as a thermally degradable polymer binder
  • QPAC40 weight average molecular weight 150000, solid at normal temperature , Empower Materials Co., Ltd.
  • isobornyl cyclohexanol trade name “Telsorb MTPH”, liquid at normal temperature, manufactured by Nippon Terpene Chemical Co., Ltd.
  • HM-500 stock The company Keyence
  • the obtained varnish is applied to a release-treated film (trade name "MRA 50", manufactured by Mitsubishi Resins Co., Ltd.) and then dried to form a 40 ⁇ m thick adhesive layer for sinter bonding, ie, sinter bonding A sheet of 40 ⁇ m in thickness was formed.
  • the drying temperature was 110 ° C., and the drying time was 3 minutes.
  • a sinter bonding sheet of Comparative Example 2 having a pressure-sensitive adhesive layer containing sinterable particles, a thermally-degradable polymer binder, and a low boiling point binder was produced.
  • the content ratio of the sinterable particles in the sinter bonding sheet of Comparative Example 2 is 95% by mass, and the ratio of particles having a particle diameter of 100 nm or less in the sinterable particles is 50% by mass.
  • a silicon chip (5 mm square, 350 ⁇ m thick) having a flat electrode (5 mm square) on one side was prepared.
  • the flat electrode has a laminated structure of a Ti layer (50 nm thick) on the surface of the silicon chip and an Au layer (100 nm thick) thereon.
  • a sheet for sinter bonding was bonded to the flat electrode of the silicon chip using a laminator equipped with a pressure roll.
  • the bonding temperature is 70 ° C.
  • the bonding load (pressure by the pressure roll) is 0.3 MPa
  • the speed of the pressure roll is 10 mm / sec.
  • the obtained silicon chip with a sintering bonding sheet was sintered and bonded to a copper plate (3 mm in thickness) entirely covered with an Ag film (5 ⁇ m in thickness).
  • a sintering process is performed using a sintering apparatus (trade name "HTM-3000", manufactured by Shoto Co., Ltd.) Did.
  • the pressure applied to the object to be sintered in the thickness direction is 10 MPa
  • the heating temperature for sintering is 300 ° C.
  • the heating time is 2.5 minutes.
  • an SEM image image by a scanning electron microscope
  • a field emission scanning electron microscope SU8020 manufactured by Hitachi High-Technologies Corporation
  • a backscattered electron image Were obtained as image data.
  • the imaging conditions were such that the acceleration voltage was 5 kV and the magnification was 2000 times.
  • the obtained image data was subjected to an automatic binarization process of binarizing a solid part and a void part or a pore part using image analysis software ImageJ.
  • the porosity of the sintered layer in the sinter bonded sample was examined as follows for each of the sinter bonded sheets of Examples 1 to 6 and Comparative Examples 1 and 2. Specifically, first, a cross section along a silicon chip diagonal was exposed in the sintered joint sample by mechanical polishing. Next, ion polishing was performed on the exposed cross section using an ion polishing apparatus (trade name “Cross Section Polisher SM-09010”, manufactured by Nippon Denshi Co., Ltd.).
  • an SEM image image by a scanning electron microscope
  • a field emission scanning electron microscope SU8020 manufactured by Hitachi High-Technologies Corporation
  • the imaging conditions were such that the acceleration voltage was 5 kV and the magnification was 2000 times.
  • the image analysis software ImageJ the obtained image data was subjected to an automatic binarizing process of binarizing the metal portion and the void portion or the pore portion.
  • the bonding reliability of the sintered layer in the sintered bonded sample was examined as follows for each of the sintered bonding sheets of Examples 1 to 6 and Comparative Examples 1 and 2. Specifically, first, using a thermal shock tester (trade name "TSE-103ES", manufactured by Espec Corp.), 500 cycles of thermal shock at a temperature range of -40 ° C to 200 ° C on the sample Gave. One cycle of the temperature profile includes a 15 minute hold period at -40.degree. C. and a 15 minute hold period at 200.degree.
  • the sinter bonding sheets of Examples 1 to 6 are the sinter bonding sheets of Comparative Examples 1 and 2 and the identification degree.
  • the sintered layer of the sinter bonded sample according to the sinter bonded sheets of Examples 1 to 6 and the sintered layer of the sinter bonded sample according to the sinter bonded sheets of Comparative Examples 1 and 2 The pressure is 10 MPa and is formed under the same load condition of low load.
  • the void ratio is significantly lower and the density is higher than in the case of the sheets for sinter bonding of Comparative Examples 1 and 2.
  • a certain sintered layer can be formed, and a sinter bonding with a significantly high bonding rate after the above thermal shock test can be realized.
  • a composition for sinter bonding comprising: a conductive metal-containing sinterable particle having an average particle diameter of 2 ⁇ m or less and a ratio of particles having a particle diameter of 100 nm or less of 80% by mass or more.
  • a conductive metal-containing sinterable particle having an average particle diameter of 2 ⁇ m or less and a ratio of particles having a particle diameter of 100 nm or less of 80% by mass or more.
  • composition for sinter bonding according to Supplementary Note 1 or 2 wherein the average particle size of the sinterable particles is 70 nm or more or 100 nm or more.
  • composition for sinter bonding according to any one of Appendices 1 to 3 wherein the proportion of particles having a particle diameter of 100 nm or less in the sinterable particles is 85% by mass or more or 90% by mass or more.
  • content ratio of the sinterable particles is 90 to 98% by mass, 92 to 98% by mass, or 94 to 98% by mass.
  • composition for sinter bonding according to Appendix 8 wherein the weight average molecular weight of the thermally degradable polymer binder is 10000 or more.
  • thermally degradable polymer binder is a polycarbonate resin and / or an acrylic resin.
  • sinterable particles comprise at least one selected from the group consisting of silver, copper, silver oxide, and copper oxide.

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Abstract

La composition pour liaison par frittage selon l'invention comprend des particules frittées qui contiennent un métal électriquement conducteur. La taille de grain moyenne des particules frittées est inférieure ou égale à 2 µm, et le rapport entre les particules dont la taille de grain est inférieure ou égale à 100 nm et les particules frittées est supérieur ou égal à 80 %. Cette feuille (10) pour liaison par frittage est pourvue d'une couche adhésive formée à partir d'une telle composition pour liaison par frittage. La bande de découpage en dés (X) comportant une feuille pour liaison par frittage est pourvue d'une telle feuille (10) pour liaison par frittage et d'une bande de découpage en dés (20). La bande de découpage en dés (20) présente une structure stratifiée comprenant un substrat (21) et une couche d'agent adhésif (22), et la feuille (10) pour liaison par frittage est positionnée sur la couche d'agent adhésif (22) de la bande de découpage en dés (20). Cette composition pour liaison par frittage, la feuille pour liaison par frittage et la bande de découpage en dés pourvue d'une feuille pour liaison par frittage sont appropriées pour réaliser une liaison par frittage à l'aide de couches frittées haute densité dans des conditions de faible charge.
PCT/JP2018/032290 2017-11-13 2018-08-31 Composition pour liaison par frittage, feuille pour liaison par frittage et bande de découpage en dés pourvue d'une feuille pour liaison par frittage WO2019092960A1 (fr)

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US16/763,298 US11352527B2 (en) 2017-11-13 2018-08-31 Sinter-bonding composition, sinter-bonding sheet and dicing tape with sinter-bonding sheet
EP18876142.3A EP3711879A4 (fr) 2017-11-13 2018-08-31 Composition pour liaison par frittage, feuille pour liaison par frittage et bande de découpage en dés pourvue d'une feuille pour liaison par frittage
JP2019551897A JP7503383B2 (ja) 2017-11-13 2018-08-31 焼結接合用組成物、焼結接合用シート、および焼結接合用シート付きダイシングテープ
CN201880073024.6A CN111328302B (zh) 2017-11-13 2018-08-31 烧结接合用组合物、烧结接合用片、及带烧结接合用片的切割带
JP2022190681A JP7440598B2 (ja) 2017-11-13 2022-11-29 焼結接合用組成物、焼結接合用シート、および焼結接合用シート付きダイシングテープ

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