WO2017057428A1 - Feuille de liaison thermique, et feuille de liaison thermique avec ruban de découpage en dés - Google Patents

Feuille de liaison thermique, et feuille de liaison thermique avec ruban de découpage en dés Download PDF

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Publication number
WO2017057428A1
WO2017057428A1 PCT/JP2016/078568 JP2016078568W WO2017057428A1 WO 2017057428 A1 WO2017057428 A1 WO 2017057428A1 JP 2016078568 W JP2016078568 W JP 2016078568W WO 2017057428 A1 WO2017057428 A1 WO 2017057428A1
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WIPO (PCT)
Prior art keywords
layer
heat bonding
bonding sheet
dicing tape
heating
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PCT/JP2016/078568
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English (en)
Japanese (ja)
Inventor
悠樹 菅生
菜穂 鎌倉
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日東電工株式会社
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Priority claimed from JP2016184493A external-priority patent/JP6870943B2/ja
Application filed by 日東電工株式会社 filed Critical 日東電工株式会社
Priority to EP16851599.7A priority Critical patent/EP3358607A4/fr
Priority to CN201680058289.XA priority patent/CN108174618B/zh
Priority to US15/762,066 priority patent/US10685933B2/en
Publication of WO2017057428A1 publication Critical patent/WO2017057428A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J1/00—Adhesives based on inorganic constituents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8384—Sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present invention relates to a heat bonding sheet and a heat bonding sheet with a dicing tape.
  • the method of bonding a semiconductor element to an adherend such as a metal lead frame has started from the conventional gold-silicon eutectic, and has changed to a method using solder and resin paste. At present, a conductive resin paste is sometimes used.
  • the conductive adhesive used for the power semiconductor device has high heat dissipation and low electrical resistivity.
  • Si Insulated Gate Bipolar Transistors
  • MOSFETs Metal-Oxide-Semiconductor Field-Effect Transistors
  • a semiconductor using SiC or GaN has features such as a large band gap and a high dielectric breakdown electric field, and can operate at low loss, high speed, and high temperature.
  • High-temperature operation is advantageous in automobiles and small power conversion devices that have severe thermal environments.
  • Semiconductor devices used in severe thermal environments are expected to operate at a high temperature of around 250 ° C., and solder and conductive adhesives, which are conventional bonding / adhesive materials, have problems in thermal characteristics and reliability.
  • a paste material containing sintered metal particles has been proposed (see, for example, Patent Document 1).
  • the sintered metal particle-containing paste material contains nano- and micro-sized metal particles, and these metal particles melt at a temperature lower than the normal melting point due to the nano-size effect, and sintering between the particles proceeds.
  • the paste material containing sintered metal particles since the paste material containing sintered metal particles is in a paste state, the paste material may protrude or crawl up to the chip surface when the semiconductor chip is die-attached. Therefore, an inclination occurs, which may cause a decrease in yield of semiconductor device manufacture and a variation in performance. In particular, when a high voltage is applied, if the chip is tilted, the bonding distance becomes non-uniform and the device characteristics deteriorate.
  • a sintered layer obtained by heating a material containing metal particles and an organic component has a porous structure containing a large number of pores, but the present inventors have suitable pores in the sintered layer. Otherwise, it has been found that there is a problem that high reliability cannot be obtained, for example, peeling occurs due to long-term use.
  • the present invention has been made in view of the above-mentioned problems, and the object thereof is to suppress the protrusion at the time of sticking and the creeping up to the surface of the sticking object, and to obtain a strong sintered layer after sintering.
  • An object of the present invention is to provide a heat-bonding sheet and a heat-bonding sheet with a dicing tape having the heat-bonding sheet.
  • the inventors of the present application examined a heat bonding sheet and a heat bonding sheet with a dicing tape having the heat bonding sheet. As a result, by adopting the following configuration, it was found that the protrusion at the time of sticking and the creeping up to the surface of the sticking object are suppressed, and a strong sintered layer can be obtained after sintering.
  • the invention has been completed.
  • the heat bonding sheet according to the present invention is: It has a layer that becomes a sintered layer by heating, The layer is characterized in that an average area of pore portions in a cross section after being heated under the following heating condition A is in a range of 0.005 ⁇ m 2 to 0.5 ⁇ m 2 .
  • Heating condition A The layer is heated from 80 ° C. to 300 ° C. at a heating rate of 1.5 ° C./second under a pressure of 10 MPa, and then held at 300 ° C. for 2.5 minutes.
  • the said structure since it is not a paste but a sheet form, the protrusion at the time of sticking and the creeping to the surface of a sticking target object can be suppressed. Further, it has a layer that becomes a sintered layer by heating, and the layer has an average area of pore portions in a cross section after being heated by the heating condition A within a range of 0.005 ⁇ m 2 to 0.5 ⁇ m 2. is there.
  • the heating condition A is a heating condition defined assuming that the layer becomes a sintered layer by heating. Since the average area is 0.5 ⁇ m 2 or less, the sintered layer obtained by heating the layer is strong.
  • the ratio of the pores in the cross section after the layer is heated under the heating condition A is in the range of 0.1% to 20%.
  • the sintered layer obtained by heating the layer becomes stronger.
  • the distribution width ⁇ of the area of the pore portion in the cross section after the layer is heated under the heating condition A is 2 or less.
  • the distribution width ⁇ is 2 or less, it can be said that there is little variation in the size of each pore in the sintered layer obtained by heating the layer. Therefore, the presence of large pores can prevent the portion from becoming brittle.
  • the layer after heating by the heating condition A it is preferable that the maximum area of the pore portion in the cross section in the range of 0.005 ⁇ m 2 ⁇ 100 ⁇ m 2.
  • the layer preferably contains a thermally decomposable binder that is solid at 23 ° C.
  • the layer contains a solid thermally decomposable binder at 23 ° C., it is easy to maintain the sheet shape before the heat bonding step. Moreover, it is easy to thermally decompose at the time of a heat joining process.
  • the layer includes fine metal particles, and the fine metal particles are at least one selected from the group consisting of silver, copper, silver oxide, and copper oxide.
  • the metal fine particles are contained, and the metal fine particles are at least one selected from the group consisting of silver, copper, silver oxide, and copper oxide, heat bonding can be more suitably performed.
  • the sheet for heat bonding with a dicing tape according to the present invention Dicing tape, And the heat bonding sheet laminated on the dicing tape.
  • the step of bonding to the dicing tape can be omitted.
  • seat for heat joining is provided, the protrusion at the time of affixing and the creeping to the surface of a sticking target object are suppressed.
  • the sintered layer obtained by heating the said layer becomes a strong thing.
  • FIG. 1 is a schematic cross-sectional view showing a heat bonding sheet with a dicing tape according to an embodiment of the present invention.
  • FIG. 2 is a schematic cross-sectional view showing another heat bonding sheet with dicing tape according to another embodiment of the present invention.
  • a heat bonding sheet 10 with a dicing tape has a configuration in which a heat bonding sheet 3 is laminated on a dicing tape 11.
  • the dicing tape 11 is configured by laminating the pressure-sensitive adhesive layer 2 on the substrate 1, and the heat bonding sheet 3 is provided on the pressure-sensitive adhesive layer 2.
  • seat for heat joining with a dicing tape of this invention may be the structure which formed sheet
  • the heat bonding sheets 3 and 3 ′ have a sheet shape. Since it is not a paste but a sheet, it is possible to suppress the protrusion at the time of pasting and the creeping up to the surface of the pasting object.
  • seats 3 and 3 'which concern on this embodiment consist of the layer 31 used as a sintered layer by heating.
  • the layer that becomes a sintered layer by heating may have a structure in which a plurality of layers that become sintered layers by heating are stacked.
  • this embodiment demonstrates the case where the sheet
  • stacked the layer which becomes a sintered layer by heating, and the other layer (layer which does not become a sintered layer by heating) may be sufficient. That is, the heat-bonding sheet in the present invention is not particularly limited as long as it has a layer that becomes a sintered layer by heating.
  • a layer 31 of a sintered layer by heating (hereinafter also referred to as "layer 31") is, after heating by the following heating condition A, the average area of the pore portion in the cross section, of 0.005 ⁇ m 2 ⁇ 0.5 ⁇ m 2 Within range.
  • the average area is preferably in the range of 0.007 ⁇ m 2 to 0.4 ⁇ m 2 , and more preferably in the range of 0.01 ⁇ m 2 to 0.3 ⁇ m 2 .
  • the following heating condition A is a heating condition specified assuming the condition that the layer becomes a sintered layer by heating. Details of how to determine the average area are based on the method described in the examples.
  • ⁇ Heating condition A> The layer 31 is heated from 80 ° C. to 300 ° C. at a heating rate of 1.5 ° C./second under a pressure of 10 MPa, and then held at 300 ° C. for 2.5 minutes.
  • the average area is 0.5 ⁇ m 2 or less, the sintered layer obtained by heating the layer 31 is strong.
  • the average area is the type of metal fine particles, content, average particle size, type of pyrolyzable binder, content, type of low-boiling binder, content, heating conditions when forming the sintered layer by heating (for example, , Temperature, time, heating rate, etc.) and the atmosphere (air atmosphere, nitrogen atmosphere, reducing gas atmosphere, etc.) in forming the sintered layer can be controlled.
  • the layer 31 preferably has a ratio of pores in a cross section within the range of 0.1% to 20% after being heated under the heating condition A.
  • the ratio is more preferably in the range of 0.2% to 19%, and still more preferably in the range of 0.3% to 18%. Details of how to determine the ratio are based on the method described in the examples.
  • the ratio is 20% or less, the sintered layer obtained by heating the layer becomes stronger.
  • the ratio is the type of metal fine particles, content, average particle size, type of thermally decomposable binder, content, type of low boiling point binder, content, heating conditions when forming a sintered layer by heating (for example, Temperature, time, rate of temperature increase, etc.) and the atmosphere (air atmosphere, nitrogen atmosphere, reducing gas atmosphere, etc.) in forming the sintered layer can be controlled.
  • the distribution width ⁇ of the area of the pore portion in the cross section after the layer 31 is heated under the heating condition A is 2 or less.
  • the distribution width ⁇ is more preferably 1.5 or less, and further preferably 1 or less.
  • the distribution width ⁇ is preferably as small as possible, but is, for example, 0.001 or more. Details of how to determine the distribution width ⁇ are based on the method described in the examples.
  • the distribution width ⁇ is the type of metal fine particles, content, average particle size, type of thermally decomposable binder, content, type of low boiling point binder, content, heating conditions when forming the sintered layer by heating ( For example, temperature, time, temperature increase rate, etc.) and the atmosphere (air atmosphere, nitrogen atmosphere, reducing gas atmosphere, etc.) in forming the sintered layer can be controlled.
  • the maximum area of the pore portion in the cross section in the range of 0.005 ⁇ m 2 ⁇ 100 ⁇ m 2.
  • the maximum area is more preferably in the range of 0.01 ⁇ m 2 to 80 ⁇ m 2 , and still more preferably in the range of 0.05 ⁇ m 2 to 70 ⁇ m 2 . Details of how to obtain the maximum area are according to the method described in the examples.
  • the maximum area is 100 ⁇ m 2 or less, there are no large pores in the sintered layer obtained by heating the layer 31. Therefore, it is possible to reduce the number of places where no current flows in the sintered layer.
  • the maximum area is the type of metal fine particles, content, average particle size, type of pyrolyzable binder, content, type of low-boiling binder, content, heating conditions when forming a sintered layer by heating (for example, , Temperature, time, heating rate, etc.) and the atmosphere (air atmosphere, nitrogen atmosphere, reducing gas atmosphere, etc.) in forming the sintered layer can be controlled.
  • the layer 31 has a tensile modulus obtained by the following tensile test method of preferably 10 MPa to 3000 MPa, more preferably 12 MPa to 2900 MPa, and further preferably 15 MPa to 2500 MPa.
  • Tensile test method (1) As a test sample, a heat bonding sheet (heat bonding sheet for tensile test) having a thickness of 200 ⁇ m, a width of 10 mm, and a length of 40 mm is prepared. (2) A tensile test was performed under the conditions of a distance between chucks of 10 mm, a tensile speed of 50 mm / min, and 23 ° C. (3) The slope of the straight line portion of the obtained stress-strain diagram is the tensile modulus.
  • the tensile elastic modulus of the layer 31 is 10 MPa or more, it is possible to further suppress the constituent material of the heat bonding sheet from protruding or creeping up to the chip surface during die attachment. Further, when the tensile elastic modulus is 3000 MPa or less, for example, the semiconductor wafer can be fixed during dicing.
  • the layer 31 has a carbon concentration of 15% by weight or less obtained by energy dispersive X-ray analysis after heating from 23 ° C. to 400 ° C. under a temperature rising rate of 10 ° C./min in an air atmosphere. It is preferably 12% by weight or less, more preferably 10% by weight or less. When the carbon concentration is 15% by weight or less, the layer 31 has almost no organic matter after the temperature is raised to 400 ° C. As a result, after the heat bonding step, the heat resistance is excellent, and high reliability and thermal characteristics are obtained even in a high temperature environment.
  • the layer 31 preferably has a peak at 150 to 350 ° C. when a differential thermal analysis is performed from 23 ° C. to 500 ° C. under the condition of a temperature increase rate of 10 ° C./min in an air atmosphere. More preferably, it is present at 180 to 310 ° C. If the peak is present at 150 to 350 ° C., it can be said that the organic substance (for example, the resin component constituting the layer 31) is thermally decomposed in this temperature region. As a result, the heat resistance after the heat bonding process is more excellent.
  • the layer 31 preferably contains metal fine particles in the range of 60 to 98 wt% with respect to the entire layer 31.
  • the content of the metal fine particles is more preferably in the range of 65 to 97% by weight, and further preferably in the range of 70 to 95% by weight.
  • the metal fine particles can be sintered or melted to join two objects (for example, a semiconductor chip and a lead frame).
  • Examples of the metal fine particles include sinterable metal particles.
  • metal fine particles or aggregates of metal fine particles can be suitably used.
  • the metal fine particles include fine particles made of metal.
  • the metal include gold, silver, copper, silver oxide, and copper oxide.
  • the metal fine particles are at least one selected from the group consisting of silver, copper, silver oxide, and copper oxide, heat bonding can be more suitably performed.
  • the average particle diameter of the sinterable metal particles is preferably 0.0005 ⁇ m or more, more preferably 0.001 ⁇ m or more.
  • Examples of the lower limit of the average particle diameter include 0.01 ⁇ m, 0.05 ⁇ m, and 0.1 ⁇ m.
  • the average particle size of the sinterable metal particles is preferably 30 ⁇ m or less, more preferably 25 ⁇ m or less.
  • Examples of the upper limit of the average particle diameter include 20 ⁇ m, 15 ⁇ m, 10 ⁇ m, and 5 ⁇ m.
  • the average diameter of the crystallites of the sinterable metal particles is preferably 0.01 nm or more and 60 nm or less, more preferably 0.1 nm or more and 50 nm or less, and further preferably 0.5 nm or more and 45 nm or less.
  • the average particle size of the sinterable metal particles is measured by the following method. That is, the sinterable metal particles are observed with an SEM (scanning electron microscope), and the average particle diameter is measured.
  • the SEM observation is, for example, observing at a magnification of 5000 when the sinterable metal particles are in a micro size, observing at a magnification of 50000 in the case of a submicron size, and observing at a magnification of 300000 in the case of a nano size. preferable.
  • the shape of the sinterable metal particles is not particularly limited, and may be, for example, a spherical shape, a rod shape, a scale shape, or an indefinite shape.
  • the layer 31 preferably contains a low boiling point binder.
  • the low boiling point binder is used to facilitate handling of the metal fine particles.
  • the said low boiling point binder is used also in order to adjust arbitrary mechanical physical properties. Specifically, it can be used as a metal fine particle-containing paste in which the metal fine particles are dispersed in the low boiling point binder.
  • the low boiling point binder is liquid at 23 ° C.
  • “liquid” includes semi-liquid. Specifically, it means that the viscosity at 23 ° C. by viscosity measurement with a dynamic viscoelasticity measuring device (rheometer) is 100,000 Pa ⁇ s or less.
  • the conditions for measuring the viscosity are as follows.
  • Rheometer MER III manufactured by Thermo SCIENTFIC Jig: Parallel plate 20mm ⁇ , gap 100 ⁇ m, shear rate 1 / second)
  • the low boiling point binder include, for example, pentanol, hexanol, heptanol, octanol, 1-decanol, ethylene glycol, diethylene glycol, propylene glycol, butylene glycol, ⁇ -terpineol, 1,6-hexanediol, isobornyl.
  • Monovalent and polyhydric alcohols such as cyclohexanol (MTPH), ethylene glycol butyl ether, ethylene glycol phenyl ether, diethylene glycol methyl ether, diethylene glycol ethyl ether, diethylene glycol butyl ether, diethylene glycol isobutyl ether, diethylene glycol hexyl ether, triethylene glycol methyl ether, diethylene glycol Dimethyl ether, diethylene glycol Diethyl ether, diethylene glycol dibutyl ether, diethylene glycol butyl methyl ether, diethylene glycol isopropyl methyl ether, triethylene glycol dimethyl ether, triethylene glycol butyl methyl ether, propylene glycol propyl ether, dipropylene glycol methyl ether, dipropylene glycol ethyl ether, dipropylene glycol propyl Ethers, ethers such as dipropylene glycol butyl ether, dipropy
  • the layer 31 preferably contains a thermally decomposable binder that is solid at 23 ° C.
  • a thermally decomposable binder that is solid at 23 ° C.
  • solid specifically means that the viscosity at 23 ° C. measured by the rheometer is greater than 100,000 Pa ⁇ s.
  • the “thermally decomposable binder” refers to a binder that can be thermally decomposed in the heat bonding step. It is preferable that the thermally decomposable binder hardly remains in the sintered layer (heated layer 31) after the heat bonding step.
  • the thermally decomposable binder for example, even if it is contained in the layer 31, it is an energy dispersive type after being heated from 23 ° C. to 400 ° C. under a temperature rising rate of 10 ° C./min. Examples thereof include materials whose carbon concentration obtained by X-ray analysis is 15% by weight or less. For example, if a material that is more easily thermally decomposed is used as the thermally decomposable binder, even if the content is relatively increased, the sintered layer (heated layer 31) is hardly left after the heat bonding step. can do.
  • thermally decomposable binder examples include polycarbonate, acrylic resin, ethyl cellulose, and polyvinyl alcohol. These materials can be used alone or in admixture of two or more. Of these, polycarbonate is preferable from the viewpoint of high thermal decomposability.
  • the polycarbonate is not particularly limited as long as it can be thermally decomposed in the heat bonding step, but an aromatic compound (for example, benzene) is interposed between the carbonate ester groups (—O—CO—O—) of the main chain.
  • aliphatic polycarbonate is preferable.
  • the aliphatic polycarbonate include polyethylene carbonate and polypropylene carbonate. Among these, polypropylene carbonate is preferable from the viewpoint of solubility in an organic solvent in producing a varnish for forming a sheet.
  • aromatic polycarbonate examples include those containing a bisphenol A structure in the main chain.
  • the polycarbonate preferably has a weight average molecular weight in the range of 10,000 to 1,000,000.
  • the weight average molecular weight is a value measured by GPC (gel permeation chromatography) and calculated in terms of polystyrene.
  • the acrylic resin is an ester of acrylic acid or methacrylic acid ester having a linear or branched alkyl group having 30 or less carbon atoms, particularly 4 to 18 carbon atoms, as long as it can be thermally decomposed in the heat bonding step.
  • Polymers (acrylic copolymers) containing seeds or two or more kinds as components are listed.
  • alkyl group examples include a methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, t-butyl group, isobutyl group, amyl group, isoamyl group, hexyl group, heptyl group, cyclohexyl group, 2- Examples include ethylhexyl group, octyl group, isooctyl group, nonyl group, isononyl group, decyl group, isodecyl group, undecyl group, lauryl group, tridecyl group, tetradecyl group, stearyl group, octadecyl group, and dodecyl group.
  • the other monomer forming the polymer is not particularly limited, and for example, acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid Or a carboxyl group-containing monomer such as crotonic acid, an acid anhydride monomer such as maleic anhydride or itaconic anhydride, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, (meth ) 4-hydroxybutyl acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate or (4 -Hydroxymethyl cycle Hexyl) -hydroxyl group-containing monomers such as methyl acrylate, styrene sulfonic
  • acrylic resins those having a weight average molecular weight of 10,000 to 1,000,000 are more preferable, and those having a weight average molecular weight of 30,000 to 700,000 are more preferable. It is because it is excellent in the adhesiveness before a heat joining process and the thermal decomposability in the heat joining process as it is in the said numerical range.
  • the weight average molecular weight is a value measured by GPC (gel permeation chromatography) and calculated in terms of polystyrene.
  • acrylic resins acrylic resins that thermally decompose at 200 ° C. to 400 ° C. are preferable.
  • the layer 31 may appropriately contain, for example, a plasticizer in addition to the above components.
  • the solvent used in the varnish is not particularly limited, but an organic solvent or an alcohol solvent that can uniformly dissolve, knead, or disperse the above components is preferable.
  • the organic solvent include ketone solvents such as dimethylformamide, dimethylacetamide, N-methylpyrrolidone, acetone, methyl ethyl ketone, and cyclohexanone, toluene, and xylene.
  • alcohol solvent examples include ethylene glycol, diethylene glycol, 1,2-propanediol, 1,3-propanediol, 1,2-butanediol, 1,3-butanediol, 1,4-butanediol, 2- Examples include butene-1,4-diol, 1,2,6-hexanetriol, glycerin, octanediol, 2-methyl-2,4-pentanediol, and terpineol.
  • the application method is not particularly limited.
  • the solvent coating method include a die coater, a gravure coater, a roll coater, a reverse coater, a comma coater, a pipe doctor coater, and screen printing.
  • a die coater is preferable in terms of high uniformity of coating thickness.
  • the drying conditions for the coating film are not particularly limited, and for example, the drying can be performed at a drying temperature of 70 to 160 ° C. and a drying time of 1 to 5 minutes. Even after the coating film is dried, depending on the type of solvent, the entire solvent may remain in the coating film without being vaporized.
  • the layer 31 contains the low boiling point binder
  • a part of the low boiling point binder may volatilize depending on the drying conditions. Therefore, the ratio of each component constituting the layer 31 changes according to the drying conditions. For example, even in the layer 31 formed from the same varnish, the higher the drying temperature and the longer the drying time, the more the metal fine particle content and the pyrolyzable binder content in the entire layer 31. Become. Therefore, it is preferable to set the drying conditions so that the content of the metal fine particles and the thermally decomposable binder in the layer 31 is a desired amount.
  • polyethylene terephthalate (PET) polyethylene
  • polypropylene polypropylene
  • a release agent such as a fluorine-type release agent or a long-chain alkyl acrylate release agent
  • the thickness of the heat-bonding sheets 3 and 3 'at 23 ° C. before heating is preferably 5 to 100 ⁇ m, and more preferably 10 to 80 ⁇ m.
  • the thickness at 23 ° C. is 5 ⁇ m or more, the protrusion can be further suppressed.
  • it is 100 ⁇ m or less, it is possible to further suppress the occurrence of inclination during heat bonding.
  • the dicing tape 11 is configured by laminating an adhesive layer 2 on a substrate 1.
  • the base material 1 is a strength base of the heat bonding sheets 10 and 12 with a dicing tape, and preferably has ultraviolet transparency.
  • the substrate 1 include low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolyprolene, polybutene, polymethylpentene, and the like.
  • Polyolefin ethylene-vinyl acetate copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, ethylene -Hexene copolymer, Polyester such as polyurethane, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyetheretherketone, polyetherimide, polyamide, wholly aromatic polyamide, polyphenyls Fuido, aramid (paper), glass, glass cloth, fluorine resin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, silicone resin, metal (foil), paper, and the like.
  • Polyester such as polyurethane, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyetheretherketone, polyetherimide, polyamide, wholly aromatic polyamide,
  • examples of the material of the substrate 1 include polymers such as a crosslinked body of the resin.
  • the plastic film may be used unstretched or may be uniaxially or biaxially stretched as necessary.
  • the adhesive area between the pressure-sensitive adhesive layer 2 and the heat bonding sheets 3 and 3 ′ is reduced by thermally shrinking the base material 1 after dicing, The collection of the semiconductor chip can be facilitated.
  • the surface of the substrate 1 is chemically treated by conventional surface treatments such as chromic acid treatment, ozone exposure, flame exposure, high piezoelectric impact exposure, ionizing radiation treatment, etc. in order to improve adhesion and retention with adjacent layers.
  • a physical treatment or a coating treatment with a primer for example, an adhesive substance described later can be performed.
  • the thickness of the substrate 1 is not particularly limited and can be appropriately determined, but is generally about 5 to 200 ⁇ m.
  • the pressure-sensitive adhesive used for forming the pressure-sensitive adhesive layer 2 is not particularly limited, and for example, a general pressure-sensitive adhesive such as an acrylic pressure-sensitive adhesive or a rubber-based pressure-sensitive adhesive can be used.
  • a general pressure-sensitive adhesive such as an acrylic pressure-sensitive adhesive or a rubber-based pressure-sensitive adhesive
  • an acrylic pressure-sensitive adhesive having an acrylic polymer as a base polymer from the viewpoint of cleanability with an organic solvent such as ultrapure water or alcohol of an electronic component that is difficult to contaminate a semiconductor wafer or glass Is preferred.
  • acrylic polymer examples include (meth) acrylic acid alkyl esters (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, Isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, hexadecyl ester , Octadecyl esters, eicosyl esters, etc., alkyl groups having 1 to 30 carbon atoms, especially 4 to 18 carbon atoms, such as
  • the acrylic polymer contains units corresponding to other monomer components copolymerizable with the (meth) acrylic acid alkyl ester or cycloalkyl ester, if necessary, for the purpose of modifying cohesive force, heat resistance and the like. You may go out.
  • Such monomer components include, for example, carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid; maleic anhydride Acid anhydride monomers such as itaconic anhydride; 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate Hydroxyl group-containing monomers such as 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, (4-hydroxymethylcyclohexyl) methyl (meth) acrylate; Styrene Contains sulfonic acid groups such as phonic acid, allyl sulf
  • a polyfunctional monomer or the like can be included as a monomer component for copolymerization as necessary.
  • examples of such polyfunctional monomers include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, Pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, urethane (meth) An acrylate etc. are mentioned. These polyfunctional monomers can also be used alone or in combination of two or more. The amount of the polyfunctional monomer used is preferably
  • the acrylic polymer can be obtained by subjecting a single monomer or a mixture of two or more monomers to polymerization.
  • the polymerization can be performed by any method such as solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization and the like.
  • the content of the low molecular weight substance is preferably small.
  • the number average molecular weight of the acrylic polymer is preferably 100,000 or more, more preferably about 200,000 to 3,000,000, and particularly preferably about 300,000 to 1,000,000.
  • an external cross-linking agent can be appropriately employed for the pressure-sensitive adhesive in order to increase the number average molecular weight of an acrylic polymer as a base polymer.
  • the external crosslinking method include a method of adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, a melamine crosslinking agent, and reacting them.
  • a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, a melamine crosslinking agent, and reacting them.
  • the amount used is appropriately determined depending on the balance with the base polymer to be cross-linked, and further depending on the intended use as an adhesive. In general, it is preferable to add about 5 parts by weight or less, and further 0.1 to 5 parts by weight with respect to 100 parts by weight of the base polymer.
  • additives such as conventionally well-known various tackifiers and anti-aging agent, other than the said component as needed to an adhesive.
  • the pressure-sensitive adhesive layer 2 can be formed of a radiation curable pressure-sensitive adhesive.
  • the radiation curable pressure-sensitive adhesive can increase the degree of cross-linking by irradiation with radiation such as ultraviolet rays, and can easily reduce its adhesive strength, and a portion 2a corresponding to the work pasting portion of the pressure-sensitive adhesive layer 2 shown in FIG.
  • the difference in adhesive strength with the other part 2b can be provided by irradiating only with radiation.
  • the portion 2 a having a significantly reduced adhesive force can be easily formed. Since the heat bonding sheet 3 ′ is attached to the portion 2 a that has been cured and has reduced adhesive strength, the interface between the portion 2 a of the pressure-sensitive adhesive layer 2 and the heat bonding sheet 3 ′ is easily peeled off during pick-up. Have. On the other hand, the portion not irradiated with radiation has a sufficient adhesive force, and forms the portion 2b. In addition, you may perform irradiation of the radiation to an adhesive layer after dicing and before pick-up.
  • the portion 2b formed of the uncured radiation-curing pressure-sensitive adhesive adheres to the heat bonding sheet 3, and dicing is performed. It is possible to secure a holding force when performing. In this way, the radiation curable pressure-sensitive adhesive can support the heat bonding sheet 3 for fixing a chip-like work (semiconductor chip or the like) to an adherend such as a substrate with a good balance of adhesion and peeling.
  • the portion 2b can fix the wafer ring.
  • the radiation curable pressure-sensitive adhesive those having a radiation curable functional group such as a carbon-carbon double bond and exhibiting adhesiveness can be used without particular limitation.
  • the radiation curable pressure sensitive adhesive for example, an addition type radiation curable pressure sensitive adhesive in which a radiation curable monomer component or an oligomer component is blended with a general pressure sensitive pressure sensitive adhesive such as an acrylic pressure sensitive adhesive or a rubber pressure sensitive adhesive. An agent can be illustrated.
  • Examples of the radiation curable monomer component to be blended include urethane oligomer, urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, and pentaerythritol.
  • Examples include stall tetra (meth) acrylate, dipentaerystol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, and 1,4-butanediol di (meth) acrylate.
  • the radiation curable oligomer component examples include urethane, polyether, polyester, polycarbonate, and polybutadiene oligomers, and those having a molecular weight in the range of about 100 to 30000 are suitable.
  • the compounding amount of the radiation-curable monomer component or oligomer component can be appropriately determined in accordance with the type of the pressure-sensitive adhesive layer, and the amount capable of reducing the adhesive strength of the pressure-sensitive adhesive layer. In general, the amount is, for example, about 5 to 500 parts by weight, preferably about 40 to 150 parts by weight with respect to 100 parts by weight of the base polymer such as an acrylic polymer constituting the pressure-sensitive adhesive.
  • the radiation-curable pressure-sensitive adhesive has a carbon-carbon double bond in the polymer side chain, main chain, or main chain terminal as a base polymer.
  • Intrinsic radiation curable pressure sensitive adhesives using Intrinsic radiation curable pressure-sensitive adhesive does not need to contain an oligomer component, which is a low-molecular component, or does not contain much, so that the oligomer component or the like does not move in the pressure-sensitive adhesive over time and is stable. Since the adhesive layer of a layer structure can be formed, it is preferable.
  • the base polymer having a carbon-carbon double bond those having a carbon-carbon double bond and having adhesiveness can be used without particular limitation.
  • those having an acrylic polymer as a basic skeleton are preferable.
  • the basic skeleton of the acrylic polymer include the acrylic polymers exemplified above.
  • the method for introducing the carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be adopted. However, it is easy in terms of molecular design to introduce the carbon-carbon double bond into the polymer side chain. It is. For example, after a monomer having a functional group is copolymerized in advance with an acrylic polymer, a compound having a functional group capable of reacting with the functional group and a carbon-carbon double bond is converted into a radiation-curable carbon-carbon double bond. A method of performing condensation or addition reaction while maintaining the above.
  • combinations of these functional groups include carboxylic acid groups and epoxy groups, carboxylic acid groups and aziridyl groups, hydroxyl groups and isocyanate groups, and the like.
  • a combination of a hydroxyl group and an isocyanate group is preferable because of easy tracking of the reaction.
  • the functional group may be on either side of the acrylic polymer and the compound as long as the combination of these functional groups generates an acrylic polymer having the carbon-carbon double bond.
  • it is preferable that the acrylic polymer has a hydroxyl group and the compound has an isocyanate group.
  • examples of the isocyanate compound having a carbon-carbon double bond include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl- ⁇ , ⁇ -dimethylbenzyl isocyanate, and the like.
  • the acrylic polymer a copolymer obtained by copolymerizing the above-mentioned exemplified hydroxy group-containing monomers, ether compounds of 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl ether, or the like is used.
  • the base polymer (particularly acrylic polymer) having the carbon-carbon double bond can be used alone, but the radiation curable monomer does not deteriorate the characteristics.
  • Components and oligomer components can also be blended.
  • the radiation-curable oligomer component or the like is usually in the range of 30 parts by weight, preferably in the range of 0 to 10 parts by weight, based on 100 parts by weight of the base polymer.
  • the radiation curable pressure-sensitive adhesive contains a photopolymerization initiator when cured by ultraviolet rays or the like.
  • the photopolymerization initiator include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, ⁇ -hydroxy- ⁇ , ⁇ '-dimethylacetophenone, 2-methyl-2-hydroxypropio ⁇ -ketol compounds such as phenone and 1-hydroxycyclohexyl phenyl ketone; methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- ( Acetophenone compounds such as methylthio) -phenyl] -2-morpholinopropane-1; benzoin ether compounds such as benzoin ethyl ether, benzoin isopropyl ether and anisoin methyl ether; ketal compounds such as benzyldimethyl ketal; 2-naphthalene
  • the radiation curable pressure-sensitive adhesive examples include photopolymerizable compounds such as an addition polymerizable compound having two or more unsaturated bonds and an alkoxysilane having an epoxy group disclosed in JP-A-60-196956. And a rubber-based pressure-sensitive adhesive and an acrylic pressure-sensitive adhesive containing a photopolymerization initiator such as a carbonyl compound, an organic sulfur compound, a peroxide, an amine, and an onium salt-based compound.
  • photopolymerizable compounds such as an addition polymerizable compound having two or more unsaturated bonds and an alkoxysilane having an epoxy group disclosed in JP-A-60-196956.
  • a rubber-based pressure-sensitive adhesive and an acrylic pressure-sensitive adhesive containing a photopolymerization initiator such as a carbonyl compound, an organic sulfur compound, a peroxide, an amine, and an onium salt-based compound.
  • a compound that is colored by irradiation with radiation may be contained as necessary.
  • a compound to be colored in the pressure-sensitive adhesive layer 2 by irradiation with radiation only the irradiated portion can be colored. That is, the portion 2a corresponding to the workpiece pasting portion 3a shown in FIG. 1 can be colored. Accordingly, whether or not the pressure-sensitive adhesive layer 2 has been irradiated with radiation can be immediately determined by visual observation, the workpiece pasting portion 3a can be easily recognized, and workpieces can be easily pasted together.
  • the detection accuracy is increased, and no malfunction occurs when the semiconductor chip is picked up.
  • the compound that is colored by irradiation with radiation is a colorless or light color compound before irradiation with radiation, but becomes a color by irradiation with radiation, and examples thereof include leuco dyes.
  • the use ratio of the compound colored by radiation irradiation can be set as appropriate.
  • the thickness of the pressure-sensitive adhesive layer 2 is not particularly limited, but is preferably about 1 to 50 ⁇ m from the viewpoint of preventing chipping of the chip cut surface and compatibility of fixing and holding the heat bonding sheets 3 and 3 ′. .
  • the thickness is preferably 2 to 30 ⁇ m, more preferably 5 to 25 ⁇ m.
  • the dicing tape 11 is manufactured as follows, for example.
  • the base material 1 can be formed by a conventionally known film forming method.
  • the film forming method include a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry lamination method.
  • the coating film is dried under predetermined conditions (heat-crosslinked as necessary), and the pressure-sensitive adhesive layer 2 is formed.
  • a coating method For example, roll coating, screen coating, gravure coating, etc. are mentioned.
  • drying conditions for example, a drying temperature of 80 to 150 ° C. and a drying time of 0.5 to 5 minutes are performed.
  • the coating film may be dried on the said drying conditions, and the adhesive layer 2 may be formed. Then, the adhesive layer 2 is bonded together with the separator on the base material 1. Thereby, the dicing tape 11 is produced.
  • the heat bonding sheets 10 and 12 with a dicing tape can be manufactured by a usual method.
  • seat 10 for heat joining with a dicing tape can be manufactured by bonding the adhesive layer 2 of the dicing tape 11 and the sheet
  • the heat bonding sheet 10 with dicing tape the heat bonding sheet 3 is preferably covered with a separator.
  • the base separator laminated on the heat bonding sheet 3 is peeled off, and the front base separator is peeled off, followed by heat joining with the dicing tape.
  • the method of sticking a separator on the exposed surface of the heat bonding sheet 3 of the sheet 10 for use is mentioned. That is, it is preferable that the dicing tape 11, the heat bonding sheet 3, and the separator are stacked in this order.
  • the heat bonding sheet with dicing tape in which the dicing tape and the heat bonding sheet are laminated has been described.
  • the heat bonding sheet of the present invention may be provided in a state where it is not bonded to a dicing tape.
  • the heat bonding sheet is preferably a heat bonding sheet with a double-sided separator sandwiched between two separators. That is, it is preferable to use a heat bonding sheet with a double-sided separator in which the first separator, the heat bonding sheet, and the second separator are laminated in this order.
  • FIG. 3 is a schematic cross-sectional view showing an embodiment of a heat-bonding sheet with a double-sided separator.
  • the heat bonding sheet 30 with a double-sided separator shown in FIG. 3 has a configuration in which a first separator 32, a heat bonding sheet 3, and a second separator 34 are laminated in this order.
  • the 1st separator 32 and the 2nd separator 34 the same thing as the above-mentioned substrate separator can be used.
  • seat for heat joining may be the form on which the separator was laminated
  • the method of manufacturing a semiconductor device includes the step of preparing the heat bonding sheet; A heat bonding step of heat bonding the semiconductor chip onto the adherend via the heat bonding sheet (hereinafter also referred to as the first embodiment).
  • the method for manufacturing a semiconductor device includes the step of preparing the heat bonding sheet with dicing tape described above, A bonding step of bonding the heat bonding sheet of the heat bonding sheet with the dicing tape and the back surface of the semiconductor wafer; A dicing step of dicing the semiconductor wafer together with the heat bonding sheet to form a chip-like semiconductor chip; Picking up the semiconductor chip together with the heat bonding sheet from the heat bonding sheet with the dicing tape; A heat bonding step of heat bonding the semiconductor chip onto the adherend via the heat bonding sheet (hereinafter also referred to as a second embodiment).
  • the semiconductor device manufacturing method according to the first embodiment is different from the semiconductor device manufacturing method according to the second embodiment in that the semiconductor device according to the first embodiment uses a heat bonding sheet with dicing tape.
  • the manufacturing method of the apparatus is different in that the heat bonding sheet is used alone, and is common in other points.
  • the step of bonding the sheet to the dicing tape is performed.
  • the manufacturing method of the semiconductor device according to the second embodiment is performed. And can be similar. Therefore, hereinafter, a method for manufacturing a semiconductor device according to the second embodiment will be described.
  • the heat bonding sheets with dicing tape 10 and 12 are prepared (preparing step).
  • the dicing tape-attached heat bonding sheets 10 and 12 are used in the following manner by appropriately separating the separator arbitrarily provided on the heat bonding sheets 3 and 3 ′.
  • a case where the heat bonding sheet with dicing tape 10 is used will be described as an example with reference to FIG.
  • the semiconductor wafer 4 is pressure-bonded onto the semiconductor wafer bonding portion 3a of the heat bonding sheet 3 in the heat bonding sheet 10 with dicing tape, and this is bonded and held (fixing step). This step is performed while pressing with a pressing means such as a pressure roll.
  • the attaching temperature at the time of mounting is not particularly limited and is preferably in the range of 23 to 90 ° C., for example.
  • the semiconductor wafer 4 is preferably one in which an electrode pad is formed on one surface and a silver thin film is formed on the outermost surface of the other surface (hereinafter also referred to as the back surface).
  • Examples of the thickness of the silver thin film include 10 nm to 1000 nm.
  • a titanium thin film may be further formed between the semiconductor wafer 4 and the silver thin film.
  • Examples of the thickness of the titanium thin film include 10 nm to 1000 nm. If the said silver thin film is formed, the semiconductor chip 5 and the sheet
  • the silver thin film and the titanium thin film can be formed by vapor deposition, for example.
  • the semiconductor wafer 4 is diced (dicing process). Thereby, the semiconductor wafer 4 is cut into a predetermined size and separated into individual pieces, and the semiconductor chip 5 is manufactured.
  • the method of dicing is not particularly limited, for example, the dicing is performed from the circuit surface side of the semiconductor wafer 4 according to a conventional method. Further, in this step, for example, a cutting method called full cut in which cutting is performed up to the heat bonding sheet with dicing tape 10 can be adopted. It does not specifically limit as a dicing apparatus used at this process, A conventionally well-known thing can be used. Further, since the semiconductor wafer 4 is bonded and fixed by the heat bonding sheet 10 with a dicing tape, chip chipping and chip jumping can be suppressed, and damage to the semiconductor wafer 4 can also be suppressed.
  • the semiconductor chip 5 is picked up in order to peel the semiconductor chip 5 adhered and fixed to the heat bonding sheet 10 with dicing tape (pickup process).
  • the pickup method is not particularly limited, and various conventionally known methods can be employed. For example, there is a method in which each semiconductor chip 5 is pushed up by a needle from the heating bonding sheet 10 with dicing tape, and the pushed-up semiconductor chip 5 is picked up by a pickup device.
  • the needle push-up speed is preferably 5 to 100 mm / sec, more preferably 5 to 10 mm / sec from the viewpoint of preventing chipping.
  • the pickup is performed after the pressure-sensitive adhesive layer 2 is irradiated with ultraviolet rays.
  • seat 3 for heat bonding of the adhesive layer 2 falls, and peeling of the semiconductor chip 5 becomes easy.
  • the pickup can be performed without damaging the semiconductor chip 5.
  • Conditions such as irradiation intensity and irradiation time at the time of ultraviolet irradiation are not particularly limited, and may be set as necessary.
  • a well-known thing can be used as a light source used for ultraviolet irradiation.
  • the adhesive layer is preliminarily irradiated with ultraviolet rays and cured, and the cured adhesive layer and the heat bonding sheet are bonded together, the ultraviolet irradiation here is not necessary.
  • the picked-up semiconductor chip 5 is die-attached (heat bonded) to the adherend 6 via the heat bonding sheet 3 (heat bonding process).
  • the adherend 6 include a lead frame, a TAB film, a substrate, and a separately manufactured semiconductor chip.
  • the adherend 6 may be, for example, a deformable adherend that can be easily deformed or a non-deformable adherend (such as a semiconductor wafer) that is difficult to deform.
  • the lead frame examples include metal lead frames such as a Cu lead frame and a 42 Alloy lead frame.
  • a conventionally well-known thing can be used as said board
  • examples thereof include organic substrates made of glass epoxy, BT (bismaleimide-triazine), polyimide, and the like.
  • BT bismaleimide-triazine
  • polyimide polyimide
  • the substrate may be an insulating circuit substrate in which a copper circuit substrate is laminated on an insulating substrate such as a ceramic plate. If an insulated circuit board is used, for example, a power semiconductor device that controls and supplies power can be manufactured.
  • the metal fine particles are sintered by heating, and the thermally decomposable binder is thermally decomposed as necessary. Further, the residual low boiling point binder that has not been volatilized by the drying step is volatilized.
  • the heating temperature is preferably 180 to 400 ° C, more preferably 190 to 370 ° C, and further preferably 200 to 350 ° C.
  • the heating time is preferably 0.3 to 300 minutes, more preferably 0.5 to 240 minutes, and still more preferably 1 to 180 minutes.
  • the pressurizing condition is preferably in the range of 1 to 500 kg / cm 2 , more preferably in the range of 5 to 400 kg / cm 2 .
  • the heat bonding under pressure can be performed with an apparatus capable of simultaneously performing heating and pressure, such as a flip chip bonder. Moreover, a parallel plate press may be used.
  • the tip of the terminal portion (inner lead) of the adherend 6 and an electrode pad (not shown) on the semiconductor chip 5 are electrically connected by a bonding wire 7.
  • a bonding wire 7 for example, a gold wire, an aluminum wire, a copper wire or the like is used.
  • the temperature for wire bonding is 23 to 300 ° C., preferably 23 to 250 ° C.
  • the heating time is several seconds to several minutes.
  • the connection is performed by a combination of vibration energy by ultrasonic waves and crimping energy by applying pressure while being heated so as to be within the temperature range.
  • the semiconductor chip 5 is sealed with a sealing resin 8 as shown in FIG. 4 (sealing step).
  • This step is performed to protect the semiconductor chip 5 and the bonding wire 7 mounted on the adherend 6.
  • This step can be performed by molding a sealing resin with a mold.
  • the sealing resin 8 for example, an epoxy resin is used.
  • the heating temperature at the time of resin sealing is usually 175 ° C. for 60 to 90 seconds, but the present invention is not limited to this. For example, it can be cured at 165 to 185 ° C. for several minutes. Thereby, the sealing resin 8 is cured.
  • a method of embedding the semiconductor chip 5 in a sheet-like sealing sheet (for example, see JP2013-7028A) can also be employed.
  • a gel sealing type in which silicone gel is poured into a case type container may be used.
  • heating is performed as necessary to completely cure the insufficiently cured sealing resin 8 in the sealing process (post-curing process).
  • the heating temperature in this step varies depending on the type of the sealing resin, but is in the range of 165 to 185 ° C., for example, and the heating time is about 0.5 to 8 hours.
  • seat for heat joining with a dicing tape can be used suitably also when laminating
  • the heat bonding sheet and the spacer may be stacked between the semiconductor chips, or only the heat bonding sheet may be stacked between the semiconductor chips without stacking the spacer. It can be changed as appropriate.
  • the heat bonding sheet and the heat bonding sheet with dicing tape of the present invention are not limited to the applications exemplified above, and can be used for heat bonding two things.
  • Copper fine particle A manufactured by Mitsui Mining & Mining Co., Ltd. Copper fine particle having an average particle size of 200 nm and an average diameter of crystallite of 31 nm.
  • Metal fine particle-containing paste A ANP-1 manufactured by Applied Nanoparticles Laboratory The amount of the low boiling point binder contained in the prepared paste) is appropriately adjusted.
  • Thermal decomposable binder A polypropylene carbonate resin
  • QPAC 40 manufactured by Empower, solid at 23 ° C.
  • Thermal decomposable binder B (acrylic resin): MM-2002-1, manufactured by Fujikura Kasei Co., Ltd., solid at 23 ° C.
  • Low boiling point binder A (Isobornylcyclohexanol): manufactured by Nippon Terpene Chemical Co., Ltd. Tersolve MTPH, liquid at 23 ° C.
  • Organic solvent A methyl ethyl ketone (MEK)
  • a silicon chip (silicon chip thickness 350 ⁇ m, length 5 mm, width 5 mm) having a Ti layer (thickness 50 nm) and an Ag layer (thickness 100 nm) formed in this order on the back surface was prepared.
  • the heat bonding sheets of Examples and Comparative Examples were bonded to the Ag layer surface of the prepared silicon chip.
  • the bonding conditions were a temperature of 70 ° C., a pressure of 0.3 MPa, and a speed of 10 mm / second.
  • a copper plate (copper plate thickness 3 mm) covered entirely with an Ag layer (thickness 5 ⁇ m) was prepared.
  • a heat bonding sheet with a silicon chip was bonded under the following conditions. Thereby, a sample for evaluation was obtained.
  • a sintering apparatus HTM-3000, manufactured by Hakutosha was used.
  • the cross section on the diagonal line of the silicon chip was exposed by a mechanical polishing method.
  • mechanical polishing rough polishing was performed and then precision polishing was performed.
  • a rough polishing apparatus RotoPol-31 manufactured by Struers was used.
  • a precision polishing apparatus MultiPrep manufactured by ALLIED was used as a polishing apparatus for precision polishing. The rough polishing conditions and the precise polishing conditions were as follows.
  • the apparatus used was a cross section polisher SM-09010 manufactured by JEOL, and the conditions for ion polishing were as follows. ⁇ Ion polishing conditions> Acceleration voltage 5-6kV Processing time 8-10 hours Projection amount from shielding plate 25-50 ⁇ m
  • the SEM image (image by a scanning electron microscope) of the cross section after ion polishing was imaged using a field emission scanning electron microscope (SU8020 manufactured by Hitachi High-Technologies Corporation).
  • the imaging conditions were an acceleration voltage of 5 kV and a magnification of 2000 times.
  • FIG. 5 is a cross-sectional SEM image of the sintered layer of Example 1 before binarization
  • FIG. 6 is a cross-sectional SEM image of the sintered layer of Example 1 after binarization.
  • the black portions in the sintered layer are pore portions
  • the gray portions are metal portions.
  • the black portion is a pore portion and the white portion is a metal portion.
  • One black dot corresponds to one pore.
  • the average area of the pores was determined by using the binarized image and dividing the total area of the pores (total area of the black part in FIG. 6) by the number of pores (number of black parts). .
  • Table 1 The results are shown in Table 1.
  • the ratio of the pore portion was determined by dividing the total area of the pore portion by the area of the entire sintered layer portion using the binarized image. The case where the ratio of the pore portion was 0.1% to 20% was evaluated as ⁇ , and the case where it was smaller than 0.1% or larger than 20% was evaluated as x. The results are shown in Table 1.
  • the distribution width ⁇ of the area of the pore portion was determined as a standard deviation value of the area of each pore portion using the binarized image. The case where the distribution width ⁇ of the area of the pore portion was 2 or less was evaluated as ⁇ , and the case where it was larger than 2 was evaluated as ⁇ . The results are shown in Table 1.
  • the sample for evaluation was put into a thermal shock tester (TSE-103ES manufactured by Espec Corp.) and subjected to 100 thermal shocks of ⁇ 40 ° C. to 200 ° C. At this time, the temperature was kept at ⁇ 40 ° C. and 200 ° C. for 15 minutes, respectively.
  • TSE-103ES manufactured by Espec Corp.
  • the area (remaining area) of the portion where bonding remains in the obtained image was obtained, and the ratio of the remaining area to the entire area (remaining bonding area ratio) was calculated.
  • the case where the residual bonding area ratio was 50% or more was evaluated as ⁇ , and the case where the residual bonding area ratio was lower than 50% was evaluated as ⁇ .
  • Table 1 In the image obtained by the ultrasonic imaging apparatus, the part where the silicon chip and the substrate are separated appears white, and the part where the bonding remains appears gray.
  • Comparative Example 1 an acrylic resin having lower thermal decomposability than polycarbonate is used as the thermally decomposable binder. Further, the content of the thermally decomposable binder is larger than in the examples. Furthermore, the drying conditions at the time of sheet formation are milder than those in Examples 2 and 3. Therefore, more low boiling point binder remains than in Example 2 and Example 3. For the above reasons, in Comparative Example 1, it is considered that a larger amount of a thermally decomposable binder and a low boiling point binder remain in the sheet even after sintering as compared with the Example. As a result, the sintered layer of Comparative Example 1 is considered to be brittle.

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  • Dicing (AREA)

Abstract

L'invention concerne une feuille de liaison thermique pourvue d'une couche dans laquelle, après chauffage de la couche de 80 °C à 300 °C à une vitesse d'augmentation de température de 1,5 °C/seconde sous une mise sous pression de 10 MPa puis maintien à 300 °C pendant 2,5 minutes, la surface moyenne des sections de pore dans la section transversale de la couche est dans la plage de 0,005 µm2 à 0,5 μm2.
PCT/JP2016/078568 2015-09-30 2016-09-28 Feuille de liaison thermique, et feuille de liaison thermique avec ruban de découpage en dés WO2017057428A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP16851599.7A EP3358607A4 (fr) 2015-09-30 2016-09-28 Feuille de liaison thermique, et feuille de liaison thermique avec ruban de découpage en dés
CN201680058289.XA CN108174618B (zh) 2015-09-30 2016-09-28 加热接合用片材及带有切割带的加热接合用片材
US15/762,066 US10685933B2 (en) 2015-09-30 2016-09-28 Thermal bonding sheet and thermal bonding sheet with dicing tape

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2015194189 2015-09-30
JP2015-194189 2015-09-30
JP2016-184493 2016-09-21
JP2016184493A JP6870943B2 (ja) 2015-09-30 2016-09-21 加熱接合用シート、及び、ダイシングテープ付き加熱接合用シート

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3543306A4 (fr) * 2016-11-18 2021-01-13 Furukawa Electric Co., Ltd. Film de liaison, bande pour traitement de tranche, procédé de production d'objet lié, et objet lié

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Publication number Priority date Publication date Assignee Title
JP2010254763A (ja) * 2009-04-22 2010-11-11 Hitachi Chem Co Ltd 接着剤組成物、その製造方法、これを用いた接着シート、一体型シート、その製造方法、半導体装置及びその製造方法
WO2011114751A1 (fr) * 2010-03-19 2011-09-22 古河電気工業株式会社 Élément de connexion conducteur et son procédé de fabrication
JP2015079650A (ja) * 2013-10-17 2015-04-23 Ｄｏｗａエレクトロニクス株式会社 接合用銀シートおよびその製造方法並びに電子部品接合方法
WO2015060346A1 (fr) * 2013-10-23 2015-04-30 日立化成株式会社 Feuille de fixation de puce et procédé de fabrication de dispositif à semi-conducteurs

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010254763A (ja) * 2009-04-22 2010-11-11 Hitachi Chem Co Ltd 接着剤組成物、その製造方法、これを用いた接着シート、一体型シート、その製造方法、半導体装置及びその製造方法
WO2011114751A1 (fr) * 2010-03-19 2011-09-22 古河電気工業株式会社 Élément de connexion conducteur et son procédé de fabrication
JP2015079650A (ja) * 2013-10-17 2015-04-23 Ｄｏｗａエレクトロニクス株式会社 接合用銀シートおよびその製造方法並びに電子部品接合方法
WO2015060346A1 (fr) * 2013-10-23 2015-04-30 日立化成株式会社 Feuille de fixation de puce et procédé de fabrication de dispositif à semi-conducteurs

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3543306A4 (fr) * 2016-11-18 2021-01-13 Furukawa Electric Co., Ltd. Film de liaison, bande pour traitement de tranche, procédé de production d'objet lié, et objet lié

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