WO2019087517A1 - Procédé de fabrication de galette de soi ayant une couche de soi à film mince - Google Patents

Procédé de fabrication de galette de soi ayant une couche de soi à film mince Download PDF

Info

Publication number
WO2019087517A1
WO2019087517A1 PCT/JP2018/030247 JP2018030247W WO2019087517A1 WO 2019087517 A1 WO2019087517 A1 WO 2019087517A1 JP 2018030247 W JP2018030247 W JP 2018030247W WO 2019087517 A1 WO2019087517 A1 WO 2019087517A1
Authority
WO
WIPO (PCT)
Prior art keywords
soi layer
film
soi
oxide film
thickness
Prior art date
Application number
PCT/JP2018/030247
Other languages
English (en)
Japanese (ja)
Inventor
阿賀　浩司
横川　功
Original Assignee
信越半導体株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 信越半導体株式会社 filed Critical 信越半導体株式会社
Publication of WO2019087517A1 publication Critical patent/WO2019087517A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body

Definitions

  • the present invention relates to a method of manufacturing an SOI wafer, and in particular, it is called FDSOI (Fully Depleted Silicon-On-Insulator), and requires extremely thin SOI layer film thickness and high SOI layer film thickness uniformity.
  • FDSOI Fluly Depleted Silicon-On-Insulator
  • SOI wafer As one of wafers for semiconductor devices, there is an SOI wafer in which a silicon layer (hereinafter, also referred to as an SOI layer or an SOI film) is formed on a buried oxide film which is an insulating film.
  • the SOI layer in the surface layer portion to be a device manufacturing region is electrically separated from the inside of the substrate by the buried insulating layer (buried oxide film layer (BOX layer)), so parasitic capacitance is small and radiation resistance It has features such as high ability. Therefore, effects such as high speed / low power consumption operation and soft error prevention are expected, and it is regarded as promising as a substrate for high performance semiconductor devices.
  • BOX layer buried oxide film layer
  • Patent Document 1 describes film thinning by etching using a mixed solution of HF and ozone in final film thickness adjustment of the SOI layer.
  • Patent Document 2 after adjusting the final film thickness of the SOI layer, after forming an oxide film on the surface of the SOI layer with ozone water, the oxide film is removed to thin the film thickness of the SOI layer.
  • Patent Document 3 describes thinning of the thickness of the SOI layer by ozone water + HF in adjusting the final thickness of the SOI layer.
  • JP 2007-266059 A Japanese Patent Laid-Open No. 2004-343013 Japanese Patent Application Laid-Open No. 2004-349493
  • the thickness of the natural oxide film is about 1 to 2 nm
  • the thickness at which the SOI layer becomes thinner by the growth is about 0.5 to 1 nm at the most. Therefore, even if the elapsed time after completion of the manufacture of the SOI wafer is long and the natural oxide film on the surface of the SOI layer is grown to the extent of saturation before being introduced into the device process, the SOI layer is thick to some extent In the case of a wafer, the difference from the thickness of the SOI layer at the time of product shipment is an error level, so no particular problem occurs.
  • the present invention has been made in view of the above problems, and even if it is an SOI wafer having a thin film SOI layer with a film thickness of 20 nm or less, the film thickness is almost constant regardless of the length of elapsed time after the completion of manufacturing. It is an object of the present invention to provide a method of manufacturing an SOI wafer having a thin film SOI layer having
  • the present invention is a method of manufacturing an SOI wafer having a thin film SOI layer, After an SOI layer having a film thickness of 20 nm or less is formed as the thin film SOI layer to produce an SOI wafer, As a final chemical solution cleaning step, cleaning is performed using a cleaning chemical solution capable of forming an oxide film on the surface of the thin film SOI layer to form an oxide film of 1 nm or more on the surface of the thin film SOI layer, After that, drying is performed without removing the oxide film formed by the cleaning to obtain a product.
  • a method of manufacturing an SOI wafer having a thin film SOI layer is provided.
  • the SOI wafer which has a thin film SOI layer (hereinafter referred to simply as an SOI layer) of 20 nm or less according to the present invention, even if the elapsed time after the final chemical solution cleaning step becomes extremely long, It is possible to suppress the growth of the natural oxide film. Therefore, to reduce the difference between the film thickness of the SOI layer after the final chemical solution cleaning step and the film thickness of the SOI layer after a long time (when the device process is introduced) (hereinafter, also referred to as a film thickness difference of the SOI layer due to the time). Can.
  • the film thickness of the SOI layer can be managed almost uniformly, and the occurrence of a problem (such as an adverse effect on the device process) caused by the above-mentioned difference can be prevented.
  • a problem such as an adverse effect on the device process
  • the formation of the oxide film for that purpose is performed in the final chemical solution cleaning step, it is not necessary to separately add a process such as heat treatment for forming the oxide film, and cost increase can be avoided.
  • the cleaning liquid capable of forming the oxide film can be used as ozone water.
  • the cleaning chemical solution is ozone water, a relatively dense oxide film can be formed, so that there is an advantage that the effect of suppressing the subsequent natural oxide film growth is higher.
  • the film thickness of the thin film SOI layer to be formed can be 15 nm or less.
  • the difference between the film thickness of the SOI layer after the final chemical solution cleaning step and the film thickness after a long time can be reduced.
  • An adverse effect can be prevented from occurring.
  • FIG. 4 shows the relationship between the film thickness of the surface oxide film (natural oxide film) and the elapsed time (days).
  • FIG. 5 shows the relationship between the thickness of the SOI layer and the elapsed time.
  • the oxide film thickness immediately after the final cleaning was about 0.9 nm and did not reach 1 nm.
  • FIG. 4 it can be seen that as the number of days elapsed after cleaning increases, the thickness of the natural oxide film gradually increases.
  • FIG. 5 it can be seen that the film thickness of the SOI layer gradually decreases.
  • the present inventors form an oxide film of 1 nm or more with the cleaning chemical, and pass through the drying step without removing the oxide film to obtain a product, thereby naturally oxidizing the conventional product as described above.
  • the inventors have found that it is possible to prevent an increase in the film thickness of the film (a decrease in the film thickness of the SOI layer) and complete the present invention.
  • an SOI wafer having an SOI layer formed on an insulating layer is manufactured.
  • the SOI wafer prepared here may be a wafer having an SOI structure in which an SOI layer having a thickness of 20 nm or less is formed at least on an insulating layer.
  • a wafer having a structure in which an insulating layer is formed on a supporting layer of single crystal silicon or the like (embedded insulating layer: BOX layer) and an SOI layer is formed on the embedded insulating layer can be mentioned.
  • the manufacturing method of the SOI wafer is not particularly limited. For example, a step of bonding a bond wafer having a microbubble layer formed by ion implantation and a base wafer to be a supporting substrate through an insulating film, and the microbubble layer And forming a thin film on the base wafer by separating the bond wafer at the boundary of the base wafer and forming a thin film on the base wafer.
  • the above-mentioned ion implantation peeling method (so-called Smart Cut (registered trademark) method), rT-CCP method (also called room temperature mechanical peeling method, SiGen method), or SIMOX method (Separation by Implanted Oxygen method) , Etc. regardless of the manufacturing method of the SOI wafer.
  • the SOI layer when forming the SOI layer of 20 nm or less, the SOI layer can be thinned by appropriately performing, for example, surface polishing, sacrificial oxidation treatment, or the like, as necessary, to obtain a target film thickness. Since the cleaning to form an oxide film is performed as a final chemical solution cleaning step described later, the stage of manufacturing this SOI wafer (that is, the SOI wafer is formed) in consideration of the thickness of the SOI layer to be reduced by the oxide film formed by the cleaning. It is necessary to adjust the film thickness of the SOI layer immediately before the final chemical solution cleaning step.
  • the present invention capable of suppressing a change in the thickness of the SOI layer is more effective.
  • the lower limit of the thickness of the SOI layer is not particularly limited, and may be larger than 0 nm. The thinner the film thickness, the higher the effectiveness of the invention.
  • the natural oxide film already formed on the surface of the SOI layer may be removed after forming the SOI layer having a predetermined film thickness by immersing in an aqueous solution containing HF. By this, the contaminant adhering to the surface of the natural oxide film can be removed together with the natural oxide film.
  • an oxide film can be formed on the surface of the SOI layer for the SOI wafer manufactured as described above. Perform cleaning using a cleaning solution. Then, an oxide film of 1 nm or more is formed by this cleaning.
  • a cleaning chemical solution used in this final chemical solution cleaning process for example, ozone water, SC1 (mixed aqueous solution of NH 4 OH and H 2 O 2 ), SC 2 (mixed aqueous solution of HCl and H 2 O 2 ), etc.
  • FIG. 2 shows the relationship between the cleaning time with ozone water and the oxide film thickness (the surface oxide film thickness on the SOI layer) formed by the cleaning. Cleaning was performed in advance with dilute hydrofluoric acid, and then cleaning was performed using ozone water while changing the cleaning time. Three minute patterns of 1 minute, 2 minutes and 3 minutes were set as the cleaning time. It can be seen from FIG. 2 that the results described above are obtained.
  • FIG. 3 shows the relationship between the amount of change in film thickness of the surface oxide film and the SOI layer ( ⁇ film thickness) and elapsed time when the cleaning time is 3 minutes.
  • ⁇ film thickness the film thickness of the surface oxide film increases only by about 0.03 nm after about 70 days
  • the change in the thickness of the SOI layer is remarkably suppressed.
  • An oxide film of 1 nm or more is formed in this final chemical solution cleaning step, and the product is left as it is without removing this oxide film as will be described later, thereby making the product more natural than the SOI wafer manufactured by the conventional manufacturing method.
  • An increase in the thickness of the oxide film can be suppressed, and a difference in the thickness of the SOI layer due to the passage of time can be remarkably suppressed.
  • the value of the film thickness difference of the SOI layer over time can be reduced to half or less than that of the conventional one.
  • the thickness of the oxide film to be formed may be 1 nm or more, preferably 1.1 nm or more, and more preferably 1.2 nm or more. By forming a film having such a film thickness, it is possible to more reliably suppress the decrease in the film thickness of the SOI layer.
  • the upper limit of the thickness of the oxide film to be formed is not particularly limited as long as it can be formed in the final chemical solution cleaning step, but in general, about 2.0 nm is sufficient.
  • the drying step for example, rinsing with pure water can be performed as required without removing the formed oxide film.
  • the drying method itself is not particularly limited, and any method such as air drying or spin drying may be used as long as the formed oxide film can be dried without being removed.
  • the product SOI wafer is packaged in a shipping box and shipped to the client.
  • the difference in film thickness of the SOI layer due to the elapsed time can be remarkably reduced.
  • the decrease in the thickness of the SOI layer due to the increase in the thickness of the native oxide film can be suppressed, and the device process caused by the change in film thickness It is possible to prevent the occurrence of the adverse effect of
  • the oxide film can be formed by the cleaning chemical during the final chemical cleaning process, it is not necessary to separately provide a process for forming the oxide film such as a heat treatment process. It is possible to save labor, time, and costs as compared to the case of providing those processes. Therefore, it is possible to provide the client with the SOI wafer in which the SOI film thickness is managed more accurately and accurately, without cost.
  • ozone water ozone concentration: 12 ppm, 3 minutes
  • the oxide film on the surface of the SOI layer was left without being removed with the above film thickness.
  • ozone water ozone concentration 12 ppm, 1 minute
  • Table 1 summarizes the various conditions and measurement results of the above-described Examples 1 and 2 and Comparative Examples 1 and 2.
  • Example 1 As shown in Table 1, comparing Example 1 and Comparative Example 1 in which the thickness of the SOI layer immediately after the final chemical solution cleaning step is 12.04 nm, the thickness reduction of the SOI layer in Example 1 is 0. In contrast to 03 nm, in Comparative Example 1, it was 0.08 nm. Also, comparing Example 2 and Comparative Example 2 in which both the SOI layer film thickness immediately after the final chemical solution cleaning step is 19.98 nm, the thickness reduction amount of the SOI layer film thickness in Example 2 is 0.04 nm. In contrast, in Comparative Example 2, it was 0.09 nm.
  • the present invention since the growth of the natural oxide film on the surface of the SOI layer formed after a long period of time immediately after the final chemical solution cleaning step can be suppressed, Compared to the conventional case (when the film thickness of the natural oxide film immediately after the final step is thinner than 1 nm), it can be reduced to half or less.
  • ozone water was used in the final chemical solution cleaning step, but in the case where an oxide film of 1 nm or more is separately formed using SC1 and SC2 separately, similarly to the first and second embodiments, The thickness reduction of the SOI layer after a long period of time could be significantly suppressed.
  • the present invention is not limited to the above embodiment.
  • the above embodiment is an exemplification, and it has substantially the same configuration as the technical idea described in the claims of the present invention, and any one having the same function and effect can be used. It is included in the technical scope of the invention.

Abstract

La présente invention concerne un procédé de fabrication d'une galette de SOI qui comprend une couche SOI à film mince, le procédé comprenant : la formation, en tant que couche de SOI à film mince, d'une couche de SOI ayant une épaisseur de film inférieure ou égale à 20 nm pour préparer une galette de SOI ; puis, en tant qu'étape finale de nettoyage par solution chimique, la réalisation d'un nettoyage à l'aide d'une solution chimique de nettoyage capable de former un film d'oxyde sur la surface de la couche de SOI à couche mince ; la formation d'un film d'oxyde ayant une épaisseur égale ou supérieure à 1 nm sur la surface de la couche de SOI à film mince ; et ensuite le séchage sans retirer le film d'oxyde formé par le nettoyage, ce qui permet d'obtenir un produit d'une galette de SOI qui possède la couche de SOI à film mince. La présente invention concerne ainsi un procédé de fabrication d'une galette de SOI comprenant une couche de SOI à film mince ayant une épaisseur de film sensiblement constante indépendamment de la durée écoulée depuis l'achèvement de la fabrication, même si la galette de SOI comporte une couche de SOI à film mince ayant une épaisseur de film inférieure ou égale à 20 nm.
PCT/JP2018/030247 2017-11-06 2018-08-13 Procédé de fabrication de galette de soi ayant une couche de soi à film mince WO2019087517A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017214118A JP6760245B2 (ja) 2017-11-06 2017-11-06 薄膜ｓｏｉ層を有するｓｏｉウェーハの製造方法
JP2017-214118 2017-11-06

Publications (1)

Publication Number Publication Date
WO2019087517A1 true WO2019087517A1 (fr) 2019-05-09

Family

ID=66331763

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2018/030247 WO2019087517A1 (fr) 2017-11-06 2018-08-13 Procédé de fabrication de galette de soi ayant une couche de soi à film mince

Country Status (3)

Country Link
JP (1) JP6760245B2 (fr)
TW (1) TW201919096A (fr)
WO (1) WO2019087517A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7251419B2 (ja) * 2019-09-11 2023-04-04 信越半導体株式会社 貼り合わせｓｏｉウェーハの製造方法
CN115516608A (zh) 2020-05-26 2022-12-23 信越半导体株式会社 Soi晶圆的制造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04144131A (ja) * 1990-10-05 1992-05-18 Toshiba Corp 半導体ウェーハの処理方法
JP2006013102A (ja) * 2004-06-25 2006-01-12 Shin Etsu Handotai Co Ltd Ｓｏｉウエーハの評価方法
JP2010040550A (ja) * 2008-07-31 2010-02-18 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコンウエハ及び／又はシリコン系部材の洗浄方法
JP2015170796A (ja) * 2014-03-10 2015-09-28 信越半導体株式会社 貼り合わせｓｏｉウェーハの製造方法
JP2015177150A (ja) * 2014-03-18 2015-10-05 信越半導体株式会社 貼り合わせウェーハの製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001257139A (ja) * 2000-01-07 2001-09-21 Canon Inc 半導体基板とその作製方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04144131A (ja) * 1990-10-05 1992-05-18 Toshiba Corp 半導体ウェーハの処理方法
JP2006013102A (ja) * 2004-06-25 2006-01-12 Shin Etsu Handotai Co Ltd Ｓｏｉウエーハの評価方法
JP2010040550A (ja) * 2008-07-31 2010-02-18 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコンウエハ及び／又はシリコン系部材の洗浄方法
JP2015170796A (ja) * 2014-03-10 2015-09-28 信越半導体株式会社 貼り合わせｓｏｉウェーハの製造方法
JP2015177150A (ja) * 2014-03-18 2015-10-05 信越半導体株式会社 貼り合わせウェーハの製造方法

Also Published As

Publication number Publication date
TW201919096A (zh) 2019-05-16
JP6760245B2 (ja) 2020-09-23
JP2019087617A (ja) 2019-06-06

Similar Documents

Publication Publication Date Title
JP5315596B2 (ja) 貼合せｓｏｉウェーハの製造方法
JP2009176860A (ja) 貼り合わせウェーハの製造方法
WO2019087517A1 (fr) Procédé de fabrication de galette de soi ayant une couche de soi à film mince
TWI601185B (zh) A semiconductor wafer cleaning tank and a method of manufacturing a bonded wafer
US8076219B2 (en) Reduction of watermarks in HF treatments of semiconducting substrates
JP2010092909A (ja) Ｓｏｉウェーハの製造方法
JP2012182201A (ja) 半導体ウェーハの製造方法
CN117136428A (zh) 硅晶圆的清洗方法及带自然氧化膜的硅晶圆的制造方法
JP5630527B2 (ja) 貼合せｓｏｉウェーハの製造方法
TWI611568B (zh) 絕緣體上矽晶圓的製造方法
US9865497B2 (en) Method for manufacturing bonded wafer
JP7251419B2 (ja) 貼り合わせｓｏｉウェーハの製造方法
US20230011691A1 (en) Method for etching substrates comprising a thin surface layer, for improving the uniformity of thickness of said layer
CN108666259A (zh) 贴合晶圆的制造方法以及贴合晶圆
JP2004343013A (ja) シリコン材料のエッチング方法
JP6864145B1 (ja) ウェーハの表面形状調整方法
JP2004031430A (ja) Ｓｏｉウエーハおよびその製造方法
JP2006303088A (ja) シリコン基板の洗浄方法
CN110600363A (zh) 去除氧化硅的方法及半导体器件的制造方法
JP2014225699A (ja) 貼合せｓｏｉウェーハの製造方法
JPH08316444A (ja) 半導体多層材料及びその製造方法
JP2015103661A (ja) 貼り合わせウェーハの製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18872489

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18872489

Country of ref document: EP

Kind code of ref document: A1