WO2019085687A1 - 含有4,6-二苯砜二苯并呋喃的双极性材料的器件 - Google Patents
含有4,6-二苯砜二苯并呋喃的双极性材料的器件 Download PDFInfo
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- WO2019085687A1 WO2019085687A1 PCT/CN2018/107237 CN2018107237W WO2019085687A1 WO 2019085687 A1 WO2019085687 A1 WO 2019085687A1 CN 2018107237 W CN2018107237 W CN 2018107237W WO 2019085687 A1 WO2019085687 A1 WO 2019085687A1
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- diphenylamine
- alkyl
- layer
- organic layer
- phenoxazinyl
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- FUFLQGLZQDKOPV-UHFFFAOYSA-N Brc(cccc1)c1Sc1cccc2c1[o]c1c2cccc1Sc1ccccc1Br Chemical compound Brc(cccc1)c1Sc1cccc2c1[o]c1c2cccc1Sc1ccccc1Br FUFLQGLZQDKOPV-UHFFFAOYSA-N 0.000 description 2
- JLEFKRHUPHIQKH-UHFFFAOYSA-N Ic1c2[o]c(c(I)ccc3)c3c2ccc1 Chemical compound Ic1c2[o]c(c(I)ccc3)c3c2ccc1 JLEFKRHUPHIQKH-UHFFFAOYSA-N 0.000 description 1
- OSXWVYUOOYESGH-UHFFFAOYSA-N O=S(c1cc(Br)ccc1)(c1c2[o]c(c(S(c3cc(Br)ccc3)(=O)=O)ccc3)c3c2ccc1)=O Chemical compound O=S(c1cc(Br)ccc1)(c1c2[o]c(c(S(c3cc(Br)ccc3)(=O)=O)ccc3)c3c2ccc1)=O OSXWVYUOOYESGH-UHFFFAOYSA-N 0.000 description 1
- MHVWEQFPGKLKOI-UHFFFAOYSA-N O=S(c1cccc(-[n]2c3ccccc3c3c2cccc3)c1)(c1c2[o]c(c(S(c3cccc(-[n]4c5ccccc5c5c4cccc5)c3)(=O)=O)ccc3)c3c2ccc1)=O Chemical compound O=S(c1cccc(-[n]2c3ccccc3c3c2cccc3)c1)(c1c2[o]c(c(S(c3cccc(-[n]4c5ccccc5c5c4cccc5)c3)(=O)=O)ccc3)c3c2ccc1)=O MHVWEQFPGKLKOI-UHFFFAOYSA-N 0.000 description 1
- MEUJZADSIYBGIC-UHFFFAOYSA-N O=S(c1cccc(c2ccc3)c1[o]c2c3S(c(cccc1)c1Br)(=O)=O)(c(cccc1)c1Br)=O Chemical compound O=S(c1cccc(c2ccc3)c1[o]c2c3S(c(cccc1)c1Br)(=O)=O)(c(cccc1)c1Br)=O MEUJZADSIYBGIC-UHFFFAOYSA-N 0.000 description 1
- YUQUNWNSQDULTI-UHFFFAOYSA-N Sc(cccc1)c1Br Chemical compound Sc(cccc1)c1Br YUQUNWNSQDULTI-UHFFFAOYSA-N 0.000 description 1
- UJOBWOGCFQCDNV-UHFFFAOYSA-N c1ccc2[nH]c(cccc3)c3c2c1 Chemical compound c1ccc2[nH]c(cccc3)c3c2c1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D307/00—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
- C07D307/77—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom ortho- or peri-condensed with carbocyclic rings or ring systems
- C07D307/91—Dibenzofurans; Hydrogenated dibenzofurans
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D405/00—Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom
- C07D405/14—Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom containing three or more hetero rings
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D413/00—Heterocyclic compounds containing two or more hetero rings, at least one ring having nitrogen and oxygen atoms as the only ring hetero atoms
- C07D413/14—Heterocyclic compounds containing two or more hetero rings, at least one ring having nitrogen and oxygen atoms as the only ring hetero atoms containing three or more hetero rings
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D417/00—Heterocyclic compounds containing two or more hetero rings, at least one ring having nitrogen and sulfur atoms as the only ring hetero atoms, not provided for by group C07D415/00
- C07D417/14—Heterocyclic compounds containing two or more hetero rings, at least one ring having nitrogen and sulfur atoms as the only ring hetero atoms, not provided for by group C07D415/00 containing three or more hetero rings
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/656—Aromatic compounds comprising a hetero atom comprising two or more different heteroatoms per ring
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6574—Polycyclic condensed heteroaromatic hydrocarbons comprising only oxygen in the heteroaromatic polycondensed ring system, e.g. cumarine dyes
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
- C09K2211/10—Non-macromolecular compounds
- C09K2211/1018—Heterocyclic compounds
- C09K2211/1025—Heterocyclic compounds characterised by ligands
- C09K2211/1029—Heterocyclic compounds characterised by ligands containing one nitrogen atom as the heteroatom
Definitions
- the present invention relates to an organic light emitting diode, and more particularly to a device comprising a bipolar material containing 4,6-diphenylsulfone dibenzofuran, and belongs to the technical field of organic light emitting materials.
- OLEDs organic light-emitting diodes
- OLED devices have the characteristics of active illumination, fast response, low energy consumption, high brightness, wide viewing angle, and flexibility, and have great application prospects in the field of flat panel display. It is highly regarded by academia and industry and is considered one of the most promising products of the 21st century. At present, OLED devices have been scaled up and widely used in electronic products such as mobile phones, tablet computers, automobile meters, and wearable devices. Electroluminescence and electrophosphorescence are referred to as first generation and second generation OLEDs, respectively. Fluorescent-based OLEDs have high stability, but are limited by the law of quantum statistics.
- the ratio of singlet excitons to triplet excitons is 1:3, so the fluorescent material is electro-induced.
- the quantum efficiency of luminescence is only 25% at most.
- the phosphorescent material has a spin-orbit coupling effect of heavy atoms, which can comprehensively utilize singlet excitons and triplet excitons, and the theoretical internal quantum efficiency can reach 100%.
- phosphorescent-based OLEDs have a significant efficiency roll-off effect in applications, which is a hindrance in high-brightness applications.
- Phosphorescent materials can utilize singlet excitons and triplet excitons in combination to achieve 100% internal quantum efficiency. Studies have shown that due to the relatively long excitonic lifetime of transition metal complexes, triplet excitons accumulate at high current densities, resulting in triplet-triplet quenching (TTA) and triplet-pole quenching (TPA). ), resulting in the phenomenon of efficiency roll-off. In order to overcome this problem, researchers often dope the phosphorescent material into the organic host material, such as doping in the bipolar host material, which can better balance the carrier injection. Recently, materials with thermally active delayed fluorescence properties have also been applied to the bulk of phosphorescent devices.
- thermally active delayed fluorescent material has a small singlet-triplet energy level difference
- triplet excitons can pass through the intersystem Singlet, pass again Resonance energy transfer (FRET) is transferred to the guest material, thereby reducing the triplet exciton concentration and improving device performance. Therefore, for high-efficiency organic light-emitting diodes, it is important to develop high-performance host materials.
- FRET Resonance energy transfer
- CBP 4,4'-bis(9-carbazolyl)biphenyl
- T g glass transition temperature
- CBP is a P-type material
- the hole mobility is much higher than the electron mobility, which is not conducive to carrier injection and transmission balance, and the luminous efficiency is low.
- the invention provides a device containing a bipolar material of 4,6-diphenyl sulfone dibenzofuran, wherein the bipolar material has 4,6-diphenyl sulfone dibenzofuran as the electron center core,
- the electron-donating diphenylamines, carbazoles, acridines and the like are used as a linking group to form a DALAD-type bipolar material having a higher glass transition temperature, and the host material has good thermal stability, and thus the present invention contains
- the organic electroluminescent device prepared from the bipolar host material has high stability.
- a device comprising a bipolar material of 4,6-diphenylsulfone dibenzofuran, comprising a cathode, an anode and an organic layer, the organic layer being a hole transport layer, a hole blocking layer, an electron transport layer, and a light-emitting layer
- the organic layer comprising a bipolar host material based on 4,6-diphenylsulfone dibenzofuran, the bipolar host material having the structure of formula (I),
- R 1 -R 6 are represented by an alkyl-substituted or unsubstituted acridinyl group, a phenothiazine group, a phenoxazinyl group, a carbazole, an indolocarbazole, a diphenylamine or other aromatic diphenylamine derivative, hydrogen , halogen, C1-C4 alkyl, and at least one of R 1 -R 6 is alkyl substituted or unsubstituted acridinyl, phenothiazine, phenoxazinyl, oxazole, indolocarbazole, diphenylamine Or other aromatic diphenylamine derivatives.
- R 1 , R 2 and R 3 are hydrogen, halogen or C1-C4 alkyl, and the other is a C1-C8 alkyl-substituted or unsubstituted acridinyl group, a phenothiazine group, a phenoxazinyl group.
- R 4 , R 5 , and R 6 are hydrogen, halogen or C1-C4 alkyl, and the other is a C1-C8 alkyl group.
- R 1 and R 4 are the same, R 2 and R 5 are the same, and R 3 and R 6 are the same.
- R 2 , R 3 , R 5 , R 6 are hydrogen, halogen or C1-C4 alkyl
- R 1 , R 4 are C1-C4 alkyl-substituted or unsubstituted acridinyl, phenothiazine , phenoxazinyl, carbazole, indolocarbazole, diphenylamine or other aromatic diphenylamine derivatives.
- R 2 , R 3 , R 5 and R 6 are hydrogen
- R 1 and R 4 are C1-C4 alkyl-substituted or unsubstituted acridinyl, carbazole and indolocarbazole.
- the compound of formula (I) is one of the following structures:
- An organic electroluminescent device comprising a cathode, an anode and an organic layer, the organic layer being one or more of a hole transport layer, a hole blocking layer, an electron transport layer, and a light-emitting layer. It is particularly noted that the above organic layers may be present in each of the layers as needed.
- the compound of the formula (I) is a material of the light-emitting layer.
- the organic layer of the electronic device of the present invention has a total thickness of from 1 to 1000 nm, preferably from 1 to 500 nm, more preferably from 5 to 300 nm.
- the organic layer may be formed into a film by steaming or spin coating.
- the preparation method of the above bipolar host material comprises the following preparation steps:
- dibenzofuran (a) is formed into a lithium salt under n-butyllithium conditions, and then iodine is obtained to obtain 4,6-diiododibenzofuran (b), followed by halogenated thiophenol (fluorine, bromine
- the thioether intermediate (c) is obtained by a Ullmann reaction; the halogenated thioether intermediate is oxidized to obtain a halogenated sulfone compound (d); and finally the halogenated sulfone compound (d) is substituted with or substituted acridine or hydrazine.
- the bipolar host material is obtained by a palladium-catalyzed Buchwald reaction or a nucleophilic substitution reaction of azole, diphenylamine (e) or the like.
- the compounds of the present invention have a higher glass transition temperature than the conventional host material CBP, and the present invention significantly improves the thermal stability of the host material.
- the organic electroluminescent device prepared by using the bipolar host material of the invention has high stability, high current efficiency and external quantum efficiency, and the material is more in line with the requirements of the organic light emitting diode for the host material.
- Figure 1 is a DSC curve of Compound 2
- FIG. 2 is a structural view of the device of the present invention, wherein 10 represents a glass substrate, 20 represents an anode, 30 represents a hole injection layer, 40 represents a hole transport layer, 50 represents a light-emitting layer, and 60 represents electron transport, 70 Representative is the electron injection layer and 80 is the cathode.
- the synthetic route is as follows:
- Dibenzofuran (8.41 g, 50 mmol) was weighed into a three-necked flask, protected with nitrogen, added to dry diethyl ether (150 mL), and the flask was placed in a -78 ° C low temperature reactor, and n-butyllithium was slowly added dropwise (2.2 M, 68 mL, 150 mmol). After the dropwise addition was completed, the reaction mixture was slowly warmed to room temperature and stirring was continued for 10 h.
- the synthetic route is as follows:
- the synthetic route is as follows:
- the synthetic route is as follows:
- the product identification data is as follows:
- the synthetic route is as follows:
- the product identification data is as follows:
- the synthetic route is as follows:
- the synthetic route is as follows:
- the synthetic route is as follows:
- the product identification data is as follows:
- the synthetic route is as follows:
- the synthetic route is as follows:
- the synthetic route is as follows:
- the product identification data is as follows:
- the glass transition temperature of Compound 2 was tested by differential scanning calorimetry (DSC) at a heating and cooling rate of 20 ° C/min under nitrogen atmosphere.
- the glass transition temperature T g of Compound 2 was measured to be 180 ° C (Fig. 1).
- the glass transition temperature of CBP reported in the literature is only 62 °C.
- the compound of the present invention has a higher glass transition temperature than the conventional host material CBP, and the present invention remarkably improves the thermal stability of the host material.
- the device structure is ITO/HATCN (5 nm) / TAPC (50 nm) / Compound 2: Ir (ppy): (4 wt%, 20 nm) / TmPyPb (50 nm) / LiF (1 nm) / AL (100 nm)
- the transparent conductive ITO glass substrate (including 10 and 20) was treated as follows: previously washed with a detergent solution, deionized water, ethanol, acetone, deionized water, and then subjected to oxygen plasma treatment for 30 seconds.
- TmPyPb 50 nm thick TmPyPb was vaporized on the light-emitting layer as the electron transport layer 60.
- the device structure is ITO/HATCN (5 nm) / TAPC (50 nm) / CBP: Ir (ppy): (4 wt%, 20 nm) / TmPyPb (50 nm) / LiF (1 nm) / AL (100 nm)
- Example 6 The method was the same as in Example 6, except that a commonly used commercially available compound CBP was used as a host material to prepare a comparative electroluminescent organic semiconductor diode device.
- an electroluminescent device prepared using the bipolar host material of the present invention has a voltage of 6.99 V, a brightness of 7082 cd/m 2 , a current efficiency of 35.41 cd/A, and a power efficiency of 15.91 lm at a current density of 20 mA/cm 2 . /W, the external quantum efficiency EQE is 9.98%; and the electroluminescent device prepared using the commercially available main body CBP has a voltage of 7.71V, a luminance of 5,845 cd/m 2 , a current efficiency of 29.23 cd/A, and a power efficiency of 11.91 at the same current density. Lm/W, the external quantum efficiency EQE is 8.5%.
- bipolar host material of the present invention a current efficiency of 21% higher than that of the device prepared by CBP and an external quantum efficiency of 17.4% can be obtained, higher device stability can be obtained, and a better application prospect is obtained. Meet the requirements of organic light-emitting diodes for the main material.
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- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (10)
- 根据权利要求1所述的器件,其中R 1、R 2、R 3中两个为氢、卤素或C1-C4烷基,另一个为C1-C8烷基取代或未取代的吖啶基、吩噻嗪基、吩噁嗪基、咔唑、茚并咔唑、二苯胺或其它芳香性二苯胺衍生物;R 4、R 5、R 6中两个为氢、卤素或C1-C4烷基,另一个为C1-C8烷基取代或未取代的吖啶基、吩噻嗪基、吩噁嗪基、咔唑、茚并咔唑、二苯胺或其它芳香性二苯胺衍生物。
- 根据权利要求2所述的器件,其中R 1、R 4相同,R 2、R 5相同,R 3、R 6相同。
- 根据权利要求3所述的器件,其中R 2、R 3、R 5、R 6为氢、卤素或C1-C4烷基,R 1、R 4为C1-C4烷基取代或者未取代的吖啶基、吩噻嗪基、吩噁嗪基、咔唑、茚并咔唑、二苯胺或其它芳香性二苯胺衍生物。
- 根据权利要求4所述的器件,其中R 2、R 3、R 5、R 6为氢,R 1、R 3为C1-C4烷基取代或者未取代的吖啶基、咔唑、茚并咔唑。
- 根据权利要求1所述的器件,所述基于4,6-二苯砜二苯并呋喃的双极性主体材料为发光层的材料。
- 根据权利要求1所述的器件,所述有机层的总厚度为1-1000nm。
- 根据权利要求1所述的器件,所述有机层通过蒸渡或旋涂形成薄膜。
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JP2020523322A JP6836018B2 (ja) | 2017-11-02 | 2018-09-25 | 4、6−ジフェニルスルホンジベンゾフランベースの双極性ホスト材料を含むデバイス |
KR1020207011733A KR102339410B1 (ko) | 2017-11-02 | 2018-09-25 | 4,6-디페닐 설폰 디벤조퓨란의 양극성 물질을 함유하는 소자 |
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CN113788820B (zh) * | 2021-08-25 | 2023-08-22 | 常州大学 | 基于二苯并杂环共轭π桥的蓝色热活性延迟荧光材料及应用 |
WO2023163533A1 (ko) * | 2022-02-23 | 2023-08-31 | 삼성디스플레이주식회사 | 광전자 소자용 유기 분자 |
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CN101184822A (zh) * | 2005-05-30 | 2008-05-21 | 西巴特殊化学品控股有限公司 | 电致发光器件 |
US20110309343A1 (en) * | 2010-06-18 | 2011-12-22 | Basf Se | Organic electronic devices comprising a layer of a dibenzofurane compound and a 8-hydroxypquinolinolato earth alkaline metal, or alkali metal complex |
CN103183683A (zh) * | 2013-01-25 | 2013-07-03 | 深圳市华星光电技术有限公司 | 含砜基的化合物、采用含砜基的化合物的有机电致发光器件及其制备方法 |
WO2014088347A1 (en) * | 2012-12-06 | 2014-06-12 | Rohm And Haas Electronic Materials Korea Ltd. | Organic electroluminescent compounds and organic electroluminescent device comprising the same |
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US20140209867A1 (en) * | 2013-01-25 | 2014-07-31 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Sulfonyl Group-Contained Compound and Organic Electroluminescent Device Using Sulfonyl Group-Contained Compound and Preparation Method Thereof |
US20180212158A1 (en) * | 2015-07-13 | 2018-07-26 | President And Fellows Of Harvard College | Organic light-emitting diode materials |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101184822A (zh) * | 2005-05-30 | 2008-05-21 | 西巴特殊化学品控股有限公司 | 电致发光器件 |
US20110309343A1 (en) * | 2010-06-18 | 2011-12-22 | Basf Se | Organic electronic devices comprising a layer of a dibenzofurane compound and a 8-hydroxypquinolinolato earth alkaline metal, or alkali metal complex |
WO2014088347A1 (en) * | 2012-12-06 | 2014-06-12 | Rohm And Haas Electronic Materials Korea Ltd. | Organic electroluminescent compounds and organic electroluminescent device comprising the same |
CN103183683A (zh) * | 2013-01-25 | 2013-07-03 | 深圳市华星光电技术有限公司 | 含砜基的化合物、采用含砜基的化合物的有机电致发光器件及其制备方法 |
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KR20200057755A (ko) | 2020-05-26 |
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JP6836018B2 (ja) | 2021-02-24 |
KR102339410B1 (ko) | 2021-12-14 |
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TWI675030B (zh) | 2019-10-21 |
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