WO2019056504A1 - 有机薄膜结构及其制备方法 - Google Patents

有机薄膜结构及其制备方法 Download PDF

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Publication number
WO2019056504A1
WO2019056504A1 PCT/CN2017/108864 CN2017108864W WO2019056504A1 WO 2019056504 A1 WO2019056504 A1 WO 2019056504A1 CN 2017108864 W CN2017108864 W CN 2017108864W WO 2019056504 A1 WO2019056504 A1 WO 2019056504A1
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Prior art keywords
resist layer
color resist
color
layer
angle
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PCT/CN2017/108864
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French (fr)
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曹武
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US15/572,512 priority Critical patent/US10677971B2/en
Publication of WO2019056504A1 publication Critical patent/WO2019056504A1/zh
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an organic thin film structure and a method for preparing the same.
  • BPS/BCS technology refers to the formation of BM (black matrix) and PS with the same organic shading material. (Interlayer spacer) structure, integrating two process processes. A variety of different structures and processes are derived depending on the design of the reticle transmittance used; wherein BPS 1Tone technology refers to the use of conventional only 0 And a 100% transmittance mask, the organic photosensitive resin containing black dye is patterned, and a pad having a certain height formed by other materials forms a different height step difference PS and BM at one time; 1Tone technology is more promising due to the low manufacturing cost of the mask and the low performance of BPS materials (especially sensitivity).
  • the BM overlaps with the scan lines or data in the array substrate; however, because the 1Tone mask does not have HTM ( Half-through zone in half-tone mask (transmission rate between 0 and 100), BPS film height is high, thickness is 3um And above, resulting in the final formation of the BM retaining wall, affecting the PI (alignment liquid) and liquid crystal flow properties of the liquid crystal forming process.
  • HTM Half-through zone in half-tone mask (transmission rate between 0 and 100)
  • BPS film height is high
  • thickness is 3um And above, resulting in the final formation of the BM retaining wall, affecting the PI (alignment liquid) and liquid crystal flow properties of the liquid crystal forming process.
  • the invention provides a color film substrate, which forms a valley between adjacent color block blocks of the color film substrate, and reduces the bottom side inclination angle of the color block, thereby obtaining a flat color resistance/BM overlapping boundary, and even Lower BM Film thickness; to solve the thicker BPS coating film, resulting in the final formation of BM retaining wall, affecting the technical problems of PI (orientation liquid) and liquid crystal flow performance in the liquid crystal forming process.
  • PI orientation liquid
  • the present invention provides an organic thin film structure comprising an organic thin film layer prepared on a surface of a glass substrate; the organic thin film layer is patterned to form at least two color resisting blocks; and a valley is formed between the two color resisting blocks ;
  • the color block includes:
  • a color resist layer on the surface of the lower color resist layer; the lower color resist layer and the material used in the color resist layer have different photosensitivity values;
  • the cross-sectional pattern of the lower color resist layer and the cross-sectional pattern of the color resist layer are both polygonal; the boundary between the color resist layer and the lower color resist layer is at an angle to the surface of the glass substrate Forming a total tilt angle of the color block;
  • the total inclination angle of the color block is 10 ° to 60 °.
  • the total tilt angle of the color block is 30 °.
  • the length of the lower bottom side of the color resist layer is smaller than the length of the upper bottom side of the lower color resist layer
  • the length of the upper bottom side of the color resist layer is smaller than the length of the lower bottom side of the color resist layer
  • An angle formed by the lower bottom edge of the color resist layer and the oblique side of the color resist layer is equal to a clip formed by the lower bottom edge of the lower color resist layer and the oblique side of the lower color resist layer Angle angle.
  • the length of the lower base of the color resist layer is equal to the length of the upper base of the lower resist layer
  • the length of the upper bottom side of the color resist layer is smaller than the length of the lower bottom side of the color resist layer
  • An angle formed by a lower bottom edge of the color resist layer and a bevel of the color resist layer is smaller than an angle formed by a lower bottom edge of the lower resist layer and a hypotenuse of the lower resist layer angle.
  • the angle between the lower bottom edge of the color resist layer and the oblique side of the color resist layer, the lower bottom edge of the lower color resist layer and the lower color resist form an angle of 30 °.
  • a surface of the organic thin film layer is provided with a light shielding layer, and the light shielding layer is patterned to form a light shielding line, and the light shielding line is located in a valley between the two color blocking blocks, and the covering layer is covered. Part of the surface of the color block.
  • the present invention also provides an organic thin film structure comprising an organic thin film layer prepared on a surface of a glass substrate; the organic thin film layer is patterned to form at least two color resist blocks; and the two color resist blocks are formed with a concave Valley;
  • the color block includes:
  • the cross-sectional pattern of the lower color resist layer and the cross-sectional pattern of the color resist layer are both polygonal; the boundary between the color resist layer and the lower color resist layer is at an angle to the surface of the glass substrate Forming a total tilt angle of the color block;
  • the total inclination angle of the color block is 10 ° to 60 °.
  • the total tilt angle of the color block is 30 °.
  • the length of the lower bottom side of the color resist layer is smaller than the length of the upper bottom side of the lower color resist layer
  • the length of the upper bottom side of the color resist layer is smaller than the length of the lower bottom side of the color resist layer
  • An angle formed by the lower bottom edge of the color resist layer and the oblique side of the color resist layer is equal to a clip formed by the lower bottom edge of the lower color resist layer and the oblique side of the lower color resist layer Angle angle.
  • the length of the lower base of the color resist layer is equal to the length of the upper base of the lower resist layer
  • the length of the upper bottom side of the color resist layer is smaller than the length of the lower bottom side of the color resist layer
  • An angle formed by a lower bottom edge of the color resist layer and a bevel of the color resist layer is smaller than an angle formed by a lower bottom edge of the lower resist layer and a hypotenuse of the lower resist layer angle.
  • the angle between the lower bottom edge of the color resist layer and the oblique side of the color resist layer, the lower bottom edge of the lower color resist layer and the lower color resist form an angle of 30 °.
  • a surface of the organic thin film layer is provided with a light shielding layer, and the light shielding layer is patterned to form a light shielding line, and the light shielding line is located in a valley between the two color blocking blocks, and the covering layer is covered. Part of the surface of the color block.
  • Step S10 providing a glass substrate
  • Step S20 Preparing an organic thin film layer on the surface of the glass substrate, and then patterning the organic thin film layer to form at least two color resist blocks;
  • the step S20 specifically includes:
  • Step S201 preparing a first organic thin film layer on the surface of the glass substrate
  • Step S202 preparing a second organic thin film on the surface of the first organic thin film layer
  • the material has a difference in photosensitivity values
  • Step S203 the first organic thin film layer and the second organic thin film are made
  • the layer is subjected to a single pass exposure process to form a lower color resist layer of the color block and color
  • Step S30 a boundary line connecting the color resist layer and the lower color resist layer, forming an angle of inclination with the surface of the glass substrate to form a total tilt angle of the color block, and controlling a total tilt angle of the color block 10 ° ⁇ 60 °.
  • step S203 in the step S203,
  • the length of the lower bottom side of the color resist layer is smaller than the length of the upper bottom side of the lower color resist layer
  • the length of the upper bottom side of the color resist layer is smaller than the length of the lower bottom side of the color resist layer
  • An angle formed by the lower bottom edge of the color resist layer and the oblique side of the color resist layer is equal to a clip formed by the lower bottom edge of the lower color resist layer and the oblique side of the lower color resist layer Angle angle.
  • step S203 in the step S203,
  • the length of the lower bottom side of the color resist layer is equal to the length of the upper bottom side of the lower color resist layer
  • the length of the upper bottom side of the color resist layer is smaller than the length of the lower bottom side of the color resist layer
  • An angle formed by a lower bottom edge of the color resist layer and a bevel of the color resist layer is smaller than an angle formed by a lower bottom edge of the lower resist layer and a hypotenuse of the lower resist layer angle.
  • the organic thin film provided by the present invention passes Forming a valley between adjacent color block blocks formed by the organic film, and reducing a bottom side angle of the color block, The outer opening of the valley is enlarged, the topography of the valley is improved, the flatness of the surface of the light shielding layer covering the color block is increased, and the film thickness of the light shielding layer is even reduced, thereby obtaining a light shielding layer having a thin thickness and a smooth surface;
  • Substrate The thicker BPS coating results in the formation of a BM retaining wall, which affects the technical problems of PI (orientation liquid) and liquid crystal flow properties in the liquid crystal forming process.
  • Fig. 1 is a schematic view showing the structure of an organic film of the present invention.
  • Embodiment 1 of an organic thin film of the present invention is a schematic structural view of Embodiment 1 of an organic thin film of the present invention.
  • Embodiment 4 is a schematic structural view of Embodiment 2 of an organic thin film of the present invention.
  • FIG. 5 is a flow chart of a method for preparing an organic thin film of the present invention.
  • the invention is directed to the thicker BPS coating film of the existing existing color film substrate, resulting in the formation of a BM retaining wall, which affects the liquid crystal forming process.
  • Technical problems of PI (alignment liquid) and liquid crystal flow properties; this embodiment can solve the drawback.
  • the organic thin film structure provided by the present invention is prepared on a glass substrate 101. a surface; the organic thin film layer is patterned to form at least two color resist blocks 102; and between the two color resist blocks 102, a valley 103 is formed; for example, the glass substrate 101
  • the color resist block 102 is prepared on the surface of the substrate of the color filter substrate; for example, the color resist block 102 is prepared on the surface of the array substrate of the liquid crystal display panel.
  • a surface of the organic thin film layer is prepared with a light shielding layer, and the light shielding layer is patterned to form a light shielding line 104, and the light shielding line 104 And a portion of the surface of the color block 102 is disposed in the valley 103 between the two color blocking blocks 102; the light shielding layer is coated on the surface of the organic film layer, and the material of the light shielding layer is filled in the Valley The surface of the valley 103 is overflowed, and the light-shielding line 104 formed after patterning is formed on the surface of the color block 102 to form a horn-shaped protrusion 105.
  • the height of the protrusion 105 is too high to affect the PI and liquid crystal flow properties in the liquid crystal forming process; in order to effectively reduce the protrusion
  • the height of 105 changes the structure of the color block 102;
  • the color block 102 includes a lower color resist layer on the glass substrate 101. a surface; and a color resist layer on the surface of the lower resist layer; the cross-sectional pattern of the lower resist layer and the cross-sectional pattern of the color resist layer are both polygonal; the color resist layer and the lower layer a boundary line of the color resist layer, and the glass substrate
  • the angle of the surface of the 101 forms the total inclination of the color block 102; wherein the color block 102 has a total tilt angle of 10 ° to 60 °.
  • the present invention provides a schematic structural view of an organic thin film, wherein the organic thin film is prepared on a glass substrate 201. a surface; the organic film is a single layer of color block.
  • the cross-sectional shape of the color resist block 202 is an isosceles trapezoid; the color resist block 202
  • the cross-sectional pattern of the film layer includes an upper bottom edge, a lower bottom edge, and a beveled edge connecting the end of the upper bottom edge and the lower bottom edge; a lower bottom corner of the color block 202, that is, the beveled edge
  • the angle formed between the bottom edges is controlled at 10 ° ⁇ 60 °.
  • the organic thin film structure provided by the present invention is prepared on the surface of the glass substrate 301;
  • the organic film is patterned to form a color block.
  • the color block is a composite film layer, and the composite film layer includes a lower color resist layer 302 prepared on a surface of the glass substrate 301. And a color resist layer 303 prepared on the surface of the lower color resist layer 302, the lower color resist layer 302 and the color resist layer 303
  • the photosensitive material used has slightly different photosensitive properties, such that after the single-pass exposure process, there is a difference in the roll angle between the color resist layer and the lower resist layer; to reduce the color block The total tilt angle; further, the flatness of the shading line covering the surface of the color resist layer is increased, and the bump height is lowered.
  • the length of the lower base of the cross-sectional pattern of the color resist layer 303 is smaller than the lower resist layer 302.
  • the length of the upper base of the cross-sectional pattern; the length of the upper base of the cross-sectional pattern of the color resist layer 303 is smaller than the length of the lower base of the cross-sectional pattern of the color resist layer 303;
  • Layer 303 The angle formed between the lower base and the oblique side of the cross-sectional pattern is the same as the angle formed between the lower base and the oblique side of the cross-sectional pattern of the lower color resist layer 302.
  • the angle between the lower bottom edge and the oblique side of the lower color resist layer 302 is 60 °, then the color resist layer 303 The angle between the lower hem and the bevel is 60 °.
  • the lower color resist layer 302 is located on the surface of the color resist layer 303, and the lower color resist layer 302 and the color resist layer 303
  • the combined cross-sectional pattern is a step pattern such that the opening of the valley is gradually opened, the material can be buffered when deposited, and the material flow rate is relatively slow, so as to avoid the material being stacked when the bottom of the valley is deposited.
  • the lower base angle of the color block is selected to be 10 °
  • the minimum angle of the photo-blocking block occupied by the light-shielding layer increases the area of the pixel opening.
  • the adjacent color block 202 can be shortened.
  • the spacing of the valleys is such that the cross-sectional pattern of the valleys is close to an inverted triangle, thereby increasing the light transmission area of the color block 202.
  • the lower bottom corner of the color block is selected to be 60 °
  • the light-shielding layer formed by the light-shielding layer has a smaller area, but the surface flatness of the light-shielding layer is generally performed.
  • the lower base angle of the color block is 30°; the color block area occupied by the light shielding layer can be well controlled. And surface flatness of the light shielding layer.
  • the organic thin film structure provided by the present invention is prepared on the surface of the glass substrate 401;
  • the organic film is patterned to form a color block.
  • the color block is a composite film layer, and the composite film layer includes a lower color resist layer 402 prepared on a surface of the glass substrate 401. And a color resist layer 403 prepared on the surface of the lower color resist layer 402, wherein the cross-color pattern of the lower color resist layer 402 and the color resist layer 403 are both isosceles trapezoids.
  • the difference between this embodiment and the second embodiment is that the length of the lower bottom side of the cross-sectional pattern of the color resist layer 403 is equal to the lower color resist layer 402.
  • the length of the upper base of the cross-sectional pattern; the length of the upper base of the cross-sectional pattern of the color resist layer 403 is smaller than the length of the lower base of the cross-sectional pattern of the color resist layer 403;
  • Layer 403 The angle formed between the lower base and the oblique side of the cross-sectional pattern is smaller than the angle formed between the lower base and the oblique side of the cross-sectional pattern of the lower resist layer 402.
  • Both the embodiment and the first embodiment can better control the surface flatness of the light shielding layer; and further reduce the protrusion height of the surface of the light shielding layer.
  • a method for preparing a color film substrate includes:
  • Step S10 providing a glass substrate.
  • Step S20 An organic thin film layer is prepared on the surface of the glass substrate, and then the organic thin film layer is patterned to form at least two color resist blocks.
  • the step S20 specifically includes:
  • Step S201 preparing a first organic thin film layer on the surface of the glass substrate.
  • Step S202 preparing a second organic thin film on the surface of the first organic thin film layer
  • the material has a difference in photosensitivity values.
  • Step S203 the first organic thin film layer and the second organic thin film are made
  • the layer is subjected to a single pass exposure process to form a lower color resist layer of the color block and color
  • Step S30 a boundary line connecting the color resist layer and the lower color resist layer, forming an angle of inclination with the surface of the glass substrate to form a total tilt angle of the color block, and controlling a total tilt angle of the color block 10 ° ⁇ 60 °.
  • the organic thin film provided by the present invention passes Forming a valley between adjacent color block blocks formed by the organic film, and reducing a bottom side angle of the color block, The outer opening of the valley is enlarged, the topography of the valley is improved, the flatness of the surface of the light shielding layer covering the color block is increased, and the film thickness of the light shielding layer is even reduced, thereby obtaining a light shielding layer having a thin thickness and a smooth surface;
  • Substrate The thicker BPS coating results in the formation of a BM retaining wall, which affects the technical problems of PI (orientation liquid) and liquid crystal flow properties in the liquid crystal forming process.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
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Abstract

一种有机薄膜结构，有机薄膜制备于玻璃基板（101，201，301，401）表面，有机薄膜经图形化处理形成至少两色阻块（102，202），相邻两色阻块（102，202）之间形成一凹谷（103）；色阻块（102，202）包括下色阻层（302，402），以及位于下色阻层（302，402）表面的上色阻层（303，403），上色阻层（303，403）与下色阻层（302，402）的边界连接，与玻璃基板（101，201，301，401）表面的夹角角度为10°～60°。

Description

有机薄膜结构及其制备方法 技术领域
本发明涉及显示技术领域，尤其涉及一种有机薄膜结构及其制备方法。
背景技术
BPS/BCS 技术是指用同一种有机遮光材料形成 BM （黑色矩阵）和 PS （层间间隔件）结构，整合两道工艺制程。根据所使用用的掩模板透过率设计的不同，衍生出多种不同的结构和工艺；其中 BPS 1Tone 技术是指利用常规的仅含有 0 和 100% 透过率的掩模板，对含黑色染料的有机感光树脂图形化，通过其他材料所形成的具有一定高度的衬垫，一次性形成具有不同高度段差 PS 以及 BM ； 1Tone 技术由于掩模板制造费用低，对 BPS 材料性能 ( 尤其是感光敏感度 ) 要求不高，因而更具有应用前景。
在像素结构中， BM 会与阵列基板中的扫描线或数据交叠；但因为 1Tone 掩膜板没有 HTM （ Half Tone Mask ，半色调掩膜板）中的半穿透区 ( 透过率处于 0 至 100 间 ) ， BPS 成膜高度较高，厚度在 3um 及以上，导致最终形成 BM 挡墙，影响液晶成盒制程出现 PI （配向液）和液晶流动性能。
 技术问题
本发明提供一种彩膜基板，将彩膜基板相邻色阻块之间形成凹谷，并将色阻块的底部侧倾角角度减小，进而得到平坦的色阻 /BM 交叠边界，甚至降低 BM 薄膜厚度；以解决 BPS 涂膜较厚，导致最终形成 BM 挡墙，影响液晶成盒制程出现 PI （配向液）和液晶流动性能的技术问题。
技术解决方案
为解决上述问题，本发明提供的技术方案如下：
本发明提供一种有机薄膜结构，包括制备于玻璃基板表面的有机薄膜层；所述有机薄膜层经图形化处理形成至少两个色阻块；两个所述色阻块之间形成有凹谷；
所述色阻块包括：
下色阻层，位于所述玻璃基板表面；以及
上色阻层，位于所述下色阻层表面；所述下色阻层与所述上色阻层所采用的材料具有不同的光敏性值；
所述下色阻层的截面图形与所述上色阻层的截面图形均为多边形；所述上色阻层和所述下色阻层的边界连线，与所述玻璃基板表面的夹角形成所述色阻块的总倾角；
其中，所述色阻块的总倾角角度为 10 ° ～ 60 °。
根据本发明一优选实施例，所述色阻块的总倾角角度为 30 ° 。
根据本发明一优选实施例，所述上色阻层的下底边的长度，小于所述下色阻层的上底边的长度；
所述上色阻层的上底边的长度，小于所述上色阻层的下底边的长度；
所述上色阻层的下底边与所述上色阻层的斜边形成的夹角角度，等于所述下色阻层的下底边与所述下色阻层的斜边形成的夹角角度。
根据本发明一优选实施例，所述上色阻层的下底边的长度，等于所述下色阻层的上底边的长度；
所述上色阻层的上底边的长度，小于所述上色阻层的下底边的长度；
所述上色阻层的下底边与所述上色阻层斜边形成的夹角角度，小于所述下色阻层的下底边与所述下色阻层的斜边形成的夹角角度。
根据本发明一优选实施例，所述上色阻层的下底边与所述上色阻层的斜边形成的夹角角度、所述下色阻层的下底边与所述下色阻层的斜边形成的夹角角度均为 30 °。
根据本发明一优选实施例，所述有机薄膜层表面制备有遮光层，所述遮光层经图形化处理形成遮光线，所述遮光线位于两所述色阻块间的凹谷内，且覆盖所述色阻块的部分表面。
本发明还提供一种有机薄膜结构，包括制备于玻璃基板表面的有机薄膜层；所述有机薄膜层经图形化处理形成至少两个色阻块；两个所述色阻块之间形成有凹谷；
所述色阻块包括：
下色阻层，位于所述玻璃基板表面；以及
上色阻层，位于所述下色阻层表面；
所述下色阻层的截面图形与所述上色阻层的截面图形均为多边形；所述上色阻层和所述下色阻层的边界连线，与所述玻璃基板表面的夹角形成所述色阻块的总倾角；
其中，所述色阻块的总倾角角度为 10 ° ～ 60 °。
根据本发明一优选实施例，所述色阻块的总倾角角度为 30 ° 。
根据本发明一优选实施例，所述上色阻层的下底边的长度，小于所述下色阻层的上底边的长度；
所述上色阻层的上底边的长度，小于所述上色阻层的下底边的长度；
所述上色阻层的下底边与所述上色阻层的斜边形成的夹角角度，等于所述下色阻层的下底边与所述下色阻层的斜边形成的夹角角度。
根据本发明一优选实施例，所述上色阻层的下底边的长度，等于所述下色阻层的上底边的长度；
所述上色阻层的上底边的长度，小于所述上色阻层的下底边的长度；
所述上色阻层的下底边与所述上色阻层斜边形成的夹角角度，小于所述下色阻层的下底边与所述下色阻层的斜边形成的夹角角度。
根据本发明一优选实施例，所述上色阻层的下底边与所述上色阻层的斜边形成的夹角角度、所述下色阻层的下底边与所述下色阻层的斜边形成的夹角角度均为 30 °。
根据本发明一优选实施例，所述有机薄膜层表面制备有遮光层，所述遮光层经图形化处理形成遮光线，所述遮光线位于两所述色阻块间的凹谷内，且覆盖所述色阻块的部分表面。
依据本发明的上述目的，提出一种有机薄膜制备方法，所述方法包括：
步骤 S10 ，提供玻璃基板；
步骤 S20 ，在所述玻璃基板表面制备有机薄膜层，然后将所述有机薄膜层图形化处理形成至少两个色阻块；
所述步骤 S20 ，具体包括：
步骤 S201 ，在所述玻璃基板表面制备第一有机薄膜层；
步骤 S202 ，在所述第一有机薄膜层表面制备第二有机薄
膜层；所述第一有机薄膜层与所述第二有机薄膜层所采用的
材质具有光敏性值差异；
步骤 S203 ，使所述第一有机薄膜层和所述第二有机薄膜
层经过单道次曝光工艺，形成所述色阻块的下色阻层和上色
阻层；
步骤 S30 ，所述上色阻层和所述下色阻层的边界连线，与所述玻璃基板表面的夹角形成所述色阻块的总倾角，将所述色阻块的总倾角角度控制在 10 ° ～ 60 °。
根据本发明一优选实施例，在所述步骤 S203 中，
所述上色阻层的下底边的长度，小于所述下色阻层的上底边的长度；
所述上色阻层的上底边的长度，小于所述上色阻层的下底边的长度；
所述上色阻层的下底边与所述上色阻层的斜边形成的夹角角度，等于所述下色阻层的下底边与所述下色阻层的斜边形成的夹角角度。
根据本发明一优选实施例，在所述步骤 S203 中，
所述上色阻层的下底边的长度，等于所述下色阻层的上底边的长度；
所述上色阻层的上底边的长度，小于所述上色阻层的下底边的长度；
所述上色阻层的下底边与所述上色阻层斜边形成的夹角角度，小于所述下色阻层的下底边与所述下色阻层的斜边形成的夹角角度。
 有益效果
本发明的有益效果为： 相较于现有技术的有机薄膜结构，本发明所提供的有机薄膜，通过 将有机薄膜形成的相邻色阻块之间形成凹谷，并将色阻块的底部侧倾角角度减小， 使得凹谷外侧开口扩大，改善凹谷地形，以提高覆盖色阻块的遮光层表面的平坦度，甚至降低遮光层的膜厚， 进而得到厚度较薄且表面平整的 遮光层 ；以解决彩膜基板的 BPS 涂膜较厚，导致最终形成 BM 挡墙，影响液晶成盒制程出现 PI （配向液）和液晶流动性能的技术问题。
附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图 1 为本发明的有机薄膜一结构示意图。
图 2 为本发明有机薄膜另一结构示意图；
图 3 为本发明有机薄膜的实施例一结构示意图；
图 4 为本发明有机薄膜的实施例二结构示意图。
图 5 为本发明有机薄膜制备方法流程图。
 本发明的最佳实施方式
以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如 [ 上 ] 、 [ 下 ] 、 [ 前 ] 、 [ 后 ] 、 [ 左 ] 、 [ 右 ] 、 [ 内 ] 、 [ 外 ] 、 [ 侧面 ] 等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。
本发明针对现有 现有彩膜基板的 BPS 涂膜较厚，导致最终形成 BM 挡墙，影响液晶成盒制程出现 PI （配向液）和液晶流动性能的技术问题； 本实施例能够解决该缺陷 。
如图 1 所示，本发明提供的有机薄膜结构，制备于玻璃基板 101 表面；所述有机薄膜层经图形化处理后形成至少两个色阻块 102 ；且两个所述色阻块 102 之间形成有凹谷 103 ；例如，所述玻璃基板 101 为液晶显示面板的彩膜基板的基底，所述色阻块 102 制备于所述彩膜基板的基底表面；又如，所述色阻块 102 制备于液晶显示面板的阵列基板表面。
所述有机薄膜层表面制备有遮光层，所述遮光层经图形化处理形成遮光线 104 ，所述遮光线 104 位于两所述色阻块 102 间的凹谷 103 内，且覆盖所述色阻块 102 的部分表面；所述遮光层涂布于所述有机薄膜层表面，所述遮光层的材料填充于所述凹谷 103 内且溢出所述凹谷 103 表面，图案化后形成的所述遮光线 104 ，覆盖在所述色阻块 102 表面的部分形成牛角状的凸起 105 。
所述凸起 105 的高度过高会影响液晶成盒制程中出现 PI 和液晶流动性能；为了有效降低所述凸起 105 的高度，改变所述色阻块 102 的结构；所述色阻块 102 包括：下色阻层，位于所述玻璃基板 101 表面；以及上色阻层，位于所述下色阻层表面；所述下色阻层的截面图形与所述上色阻层的截面图形均为多边形；所述上色阻层和所述下色阻层的边界连线，与所述玻璃基板 101 表面的夹角形成所述色阻块 102 的总倾角；其中，所述色阻块 102 的总倾角角度为 10 ° ～ 60 °。
如图 2 所示，本发明提供一种有机薄膜结构示意图，其中，所述有机薄膜制备于玻璃基板 201 表面；所述有机薄膜为单层色阻块。
所述色阻块 202 的膜层截面形状为等腰梯形；所述色阻块 202 的膜层截面图形包括上底边、下底边以及连接所述上底边端部与下底边端部的斜边；所述色阻块 202 的下底角，即所述斜边与所述下底边之间形成的夹角控制在 10 ° ～ 60 °。
实施例一
如图 3 所示，本发明提供的有机薄膜结构，有机薄膜制备于玻璃基板 301 表面； 所述有机薄膜图案化形成色阻块。
所述色阻块为复合膜层，所述复合膜层包括制备于所述玻璃基板 301 表面的下色阻层 302 、以及制备于所述下色阻层 302 表面的上色阻层 303 ，所述下色阻层 302 与所述上色阻层 303 所采用的感光材料，在光敏性质稍有不同，使得在经单道次曝光工艺后，所述上色阻层与所述下色阻层的侧倾角存在差异；以降低所述色阻块的总倾角角度；进一步，提高覆盖在所述色阻层表面的遮光线的平坦度，降低凸起高度。
所述上色阻层 303 的截面图形的下底边的长度，小于所述下色阻层 302 的截面图形的上底边的长度；所述上色阻层 303 的截面图形的上底边的长度，小于所述上色阻层 303 的截面图形的下底边的长度；所述上色阻层 303 的截面图形的下底边与斜边之间形成的夹角，与所述下色阻层 302 的截面图形的下底边与斜边之间形成的夹角角度相同。
例如，所述下色阻层 302 的下底边与斜边之间的夹角为 60 °，那么所述上色阻层 303 的下底边与斜边之间的夹角同为 60 °。
所述下色阻层 302 位于所述上色阻层 303 表面，所述下色阻层 302 与所述上色阻层 303 的组合截面图形为台阶图形，使得所述凹谷的开口逐渐张开，材料沉积时可起到缓冲作用，材料流速相对缓慢，可避免材料沉积所述凹谷底部时被架空。
所述色阻块的总倾角角度越小，所述凹谷的外侧开口面积越大，形成的所述遮光层的表面平坦度越高。
例如，所述 色阻块的下底角选择 10 ° 的极小角度，会增加所述遮光层占用的所述色阻块面积，导致像素开口面积缩小，为解决该问题，可缩短相邻所述色阻块 202 的间距，使得所述凹谷的截面图形接近倒三角形，进而可增大所述色阻块 202 的透光面积。
再如，所述 色阻块的下底角选择 60 ° 的较大角度，形成的所述遮光层占用的色阻块面积较小，但遮光层的表面平坦度表现一般。
又如，所述 色阻块的下底角角度为 30 °；能够较好的控制所述遮光层占用的色阻块面积 以及所述遮光层的表面平坦度。
实施例二
如图 4 所示，本发明提供的有机薄膜结构，有机薄膜制备于玻璃基板 401 表面； 所述有机薄膜图案化形成色阻块。
所述色阻块为复合膜层，所述复合膜层包括制备于所述玻璃基板 401 表面的下色阻层 402 、以及制备于所述下色阻层 402 表面的上色阻层 403 ，所述下色阻层 402 与所述上色阻层 403 的截面图形均为等腰梯形。
本实施例与实施例二的区别在于，所述上色阻层 403 的截面图形的下底边的长度，等于所述下色阻层 402 的截面图形的上底边的长度；所述上色阻层 403 的截面图形的上底边的长度，小于所述上色阻层 403 的截面图形的下底边的长度；所述上色阻层 403 的截面图形的下底边与斜边之间形成的夹角角度，小于所述下色阻层 402 的截面图形的下底边与斜边之间形成的夹角角度。
本实施例与实施例一均能够较好的控制所述遮光层表面平坦度；进而降低所述遮光层表面的凸起高度。
如图 5 所示，依据本发明上述实施例，提出一种彩膜基板制备方法，所述方法包括：
步骤 S10 ，提供玻璃基板。
步骤 S20 ，在所述玻璃基板表面制备有机薄膜层，然后将所述有机薄膜层图形化处理形成至少两个色阻块。
所述步骤 S20 ，具体包括：
步骤 S201 ，在所述玻璃基板表面制备第一有机薄膜层。
步骤 S202 ，在所述第一有机薄膜层表面制备第二有机薄
膜层；所述第一有机薄膜层与所述第二有机薄膜层所采用的
材质具有光敏性值差异。
步骤 S203 ，使所述第一有机薄膜层和所述第二有机薄膜
层经过单道次曝光工艺，形成所述色阻块的下色阻层和上色
阻层。
步骤 S30 ，所述上色阻层和所述下色阻层的边界连线，与所述玻璃基板表面的夹角形成所述色阻块的总倾角，将所述色阻块的总倾角角度控制在 10 ° ～ 60 °。
本发明的有益效果为： 相较于现有技术的有机薄膜结构，本发明所提供的有机薄膜，通过 将有机薄膜形成的相邻色阻块之间形成凹谷，并将色阻块的底部侧倾角角度减小， 使得凹谷外侧开口扩大，改善凹谷地形，以提高覆盖色阻块的遮光层表面的平坦度，甚至降低遮光层的膜厚， 进而得到厚度较薄且表面平整的 遮光层 ；以解决彩膜基板的 BPS 涂膜较厚，导致最终形成 BM 挡墙，影响液晶成盒制程出现 PI （配向液）和液晶流动性能的技术问题。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (15)

  1. 一种有机薄膜结构，包括制备于玻璃基板表面的有机薄膜层；其中，所述有机薄膜层经图形化处理形成至少两个色阻块；两个所述色阻块之间形成有凹谷；
    所述色阻块包括：
    下色阻层，位于所述玻璃基板表面；以及
    上色阻层，位于所述下色阻层表面；所述下色阻层与所述上色阻层所采用的材料具有不同的光敏性值；
    所述下色阻层的截面图形与所述上色阻层的截面图形均为多边形；所述上色阻层和所述下色阻层的边界连线，与所述玻璃基板表面的夹角形成所述色阻块的总倾角；
    其中，所述色阻块的总倾角角度为 10 ° ～ 60 °。
  2. 根据权利要求 1 所述的有机薄膜结构，其中，所述色阻块的总倾角角度为 30 ° 。
  3. 根据权利要求 1 所述的有机薄膜结构，其中，所述上色阻层的下底边的长度，小于所述下色阻层的上底边的长度；
    所述上色阻层的上底边的长度，小于所述上色阻层的下底边的长度；
    所述上色阻层的下底边与所述上色阻层的斜边形成的夹角角度，等于所述下色阻层的下底边与所述下色阻层的斜边形成的夹角角度。
  4. 根据权利要求 1 所述的有机薄膜结构，其中，所述上色阻层的下底边的长度，等于所述下色阻层的上底边的长度；
    所述上色阻层的上底边的长度，小于所述上色阻层的下底边的长度；
    所述上色阻层的下底边与所述上色阻层斜边形成的夹角角度，小于所述下色阻层的下底边与所述下色阻层的斜边形成的夹角角度。
  5. 根据权利要求 3 所述的有机薄膜结构，其中，所述上色阻层的下底边与所述上色阻层的斜边形成的夹角角度、所述下色阻层的下底边与所述下色阻层的斜边形成的夹角角度均为 30 °。
  6. 根据权利要求 1 所述的有机薄膜结构，其中，所述有机薄膜层表面制备有遮光层，所述遮光层经图形化处理形成遮光线，所述遮光线位于两所述色阻块间的凹谷内，且覆盖所述色阻块的部分表面。
  7. 一种有机薄膜结构，包括制备于玻璃基板表面的有机薄膜层；其中，所述有机薄膜层经图形化处理形成至少两个色阻块；两个所述色阻块之间形成有凹谷；
    所述色阻块包括：
    下色阻层，位于所述玻璃基板表面；以及
    上色阻层，位于所述下色阻层表面；
    所述下色阻层的截面图形与所述上色阻层的截面图形均为多边形；所述上色阻层和所述下色阻层的边界连线，与所述玻璃基板表面的夹角形成所述色阻块的总倾角；
    其中，所述色阻块的总倾角角度为 10 ° ～ 60 °。
  8. 根据权利要求 7 所述的有机薄膜结构，其中，所述色阻块的总倾角角度为 30 ° 。
  9. 根据权利要求 7 所述的有机薄膜结构，其中，所述上色阻层的下底边的长度，小于所述下色阻层的上底边的长度；
    所述上色阻层的上底边的长度，小于所述上色阻层的下底边的长度；
    所述上色阻层的下底边与所述上色阻层的斜边形成的夹角角度，等于所述下色阻层的下底边与所述下色阻层的斜边形成的夹角角度。
  10. 根据权利要求 7 所述的有机薄膜结构，其中，所述上色阻层的下底边的长度，等于所述下色阻层的上底边的长度；
    所述上色阻层的上底边的长度，小于所述上色阻层的下底边的长度；
    所述上色阻层的下底边与所述上色阻层斜边形成的夹角角度，小于所述下色阻层的下底边与所述下色阻层的斜边形成的夹角角度。
  11. 根据权利要求 9 所述的有机薄膜结构，其中，所述上色阻层的下底边与所述上色阻层的斜边形成的夹角角度、所述下色阻层的下底边与所述下色阻层的斜边形成的夹角角度均为 30 °。
  12. 根据权利要求 7 所述的有机薄膜结构，其中，所述有机薄膜层表面制备有遮光层，所述遮光层经图形化处理形成遮光线，所述遮光线位于两所述色阻块间的凹谷内，且覆盖所述色阻块的部分表面。
  13. 一种有机薄膜制备方法，其中，所述方法包括：
    步骤 S10 ，提供玻璃基板；
    步骤 S20 ，在所述玻璃基板表面制备有机薄膜层，然后将所述有机薄膜层图形化处理形成至少两个色阻块；
    所述步骤 S20 ，具体包括：
    步骤 S201 ，在所述玻璃基板表面制备第一有机薄膜层；
    步骤 S202 ，在所述第一有机薄膜层表面制备第二有机薄
    膜层；所述第一有机薄膜层与所述第二有机薄膜层所采用的
    材质具有光敏性值差异；
    步骤 S203 ，使所述第一有机薄膜层和所述第二有机薄膜
    层经过单道次曝光工艺，形成所述色阻块的下色阻层和上色
    阻层；
    步骤 S30 ，所述上色阻层和所述下色阻层的边界连线，与所述玻璃基板表面的夹角形成所述色阻块的总倾角，将所述色阻块的总倾角角度控制在 10 ° ～ 60 °。
  14. 根据权利要求 13 所述的有机薄膜制备方法，在所述步骤 S203 中，
    所述上色阻层的下底边的长度，小于所述下色阻层的上底边的长度；
    所述上色阻层的上底边的长度，小于所述上色阻层的下底边的长度；
    所述上色阻层的下底边与所述上色阻层的斜边形成的夹角角度，等于所述下色阻层的下底边与所述下色阻层的斜边形成的夹角角度。
  15. 根据权利要求 13 所述的有机薄膜制备方法，在所述步骤 S203 中，
    所述上色阻层的下底边的长度，等于所述下色阻层的上底边的长度；
    所述上色阻层的上底边的长度，小于所述上色阻层的下底边的长度；
    所述上色阻层的下底边与所述上色阻层斜边形成的夹角角度，小于所述下色阻层的下底边与所述下色阻层的斜边形成的夹角角度。
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CN115394204B (zh) * 2020-10-14 2023-10-24 厦门天马微电子有限公司 一种显示面板及显示装置
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