WO2019044314A1 - 基板処理装置および基板処理方法 - Google Patents

基板処理装置および基板処理方法 Download PDF

Info

Publication number
WO2019044314A1
WO2019044314A1 PCT/JP2018/028337 JP2018028337W WO2019044314A1 WO 2019044314 A1 WO2019044314 A1 WO 2019044314A1 JP 2018028337 W JP2018028337 W JP 2018028337W WO 2019044314 A1 WO2019044314 A1 WO 2019044314A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
speed
period
coating liquid
rate
Prior art date
Application number
PCT/JP2018/028337
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
雄大 和食
栄寿 佐川
Original Assignee
株式会社Ｓｃｒｅｅｎホールディングス
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社Ｓｃｒｅｅｎホールディングス filed Critical 株式会社Ｓｃｒｅｅｎホールディングス
Priority to KR1020197030074A priority Critical patent/KR102296706B1/ko
Priority to CN201880025759.1A priority patent/CN110537245B/zh
Publication of WO2019044314A1 publication Critical patent/WO2019044314A1/ja

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/02—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface
    • B05C11/08—Spreading liquid or other fluent material by manipulating the work, e.g. tilting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/10—Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/40—Distributing applied liquids or other fluent materials by members moving relatively to surface
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

Definitions

  • the present invention relates to a substrate processing apparatus and a substrate processing method for forming a film of a coating liquid on a substrate.
  • a coating solution such as a resist solution is applied to a substrate by a substrate processing apparatus in order to form a pattern on the substrate by exposure processing.
  • the film processing unit described in Patent Document 1 includes a spin chuck, a solvent discharge nozzle, and a resist solution discharge nozzle. After the substrate is held horizontally by the spin chuck and the solvent is discharged onto the substrate from the solvent discharge nozzle, the rotation of the substrate is started and the resist solution is discharged onto the substrate from the resist solution discharge nozzle. Next, in a state where the substrate is rotated, the discharge speed of the resist solution is reduced to a second discharge speed lower than the first discharge speed. Thereafter, the discharge of the resist solution and the rotation of the substrate are stopped. JP, 2001-297964, A
  • An object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of enhancing the uniformity of the thickness of a film of a coating liquid formed on a substrate while suppressing the consumption of the coating liquid.
  • a substrate processing apparatus includes: a rotary holding unit that holds and rotates a substrate in a horizontal posture; and a coating liquid discharge that discharges a coating liquid to a central portion of one surface of the substrate rotated by the rotary holding unit.
  • the rate of discharge of the coating liquid from the coating liquid discharge system is set so that the coating liquid discharged from the coating liquid discharge system to the central portion of the one surface of the substrate spreads over the one surface of the substrate during the first period.
  • a second discharge rate adjustment unit configured to adjust the discharge rate of the coating liquid to a second rate higher than the first rate.
  • the discharge rate of the coating liquid is adjusted to the first rate so that the coating liquid discharged to the central portion of the one surface of the rotating substrate spreads over the one surface of the substrate during the first period.
  • Ru The second rate at which the discharge rate of the coating liquid is higher than the first rate so that the thickness of the coating liquid spread over the entire surface of the rotating substrate is increased in the second period after the first period.
  • the coating liquid since the coating liquid is discharged at a relatively low first rate in the first period, the coating liquid can be spread over one surface of the substrate while suppressing the consumption of the coating liquid.
  • the coating liquid since the coating liquid is discharged at a relatively high second rate during the second period, even when the viscosity of the coating liquid is high, the fluidity of the coating liquid on one surface of the substrate is secured. Thereby, the coating liquid is prevented from being accumulated in a partial region of one surface of the substrate. Therefore, the uniformity of the thickness of the coating liquid on one surface of the substrate is enhanced. Therefore, the uniformity of the thickness of the film of the coating liquid formed on the substrate can be enhanced while suppressing the consumption of the coating liquid.
  • the substrate processing apparatus includes a first rotation speed adjustment unit that adjusts the rotation speed of the substrate by the rotation holding unit to the first speed during the first period, and a substrate by the rotation holding unit during the second period. And a second rotation speed adjustment unit which adjusts the rotation speed of the second rotation speed to a second speed higher than the first speed.
  • the coating solution can be stably spread on one surface of the substrate. Thereby, the consumption of the coating liquid is further suppressed.
  • the substrate rotates at a relatively high second speed during the second period, the centrifugal force acting on the coating solution is increased.
  • the coating liquid can be appropriately spread to the outer edge of one surface of the substrate, and the uniformity of the thickness of the coating liquid can be further enhanced.
  • a substrate processing apparatus includes a rotation holding unit that holds and rotates a substrate in a horizontal posture, and a coating liquid that discharges a coating liquid to a central portion of one surface of the substrate rotated by the rotation holding unit.
  • a discharge system a first discharge rate adjustment unit that adjusts a discharge rate of the application liquid from the coating liquid discharge system to a first rate in a first period, and a second period after the first period
  • a second discharge rate adjustment unit that adjusts the discharge rate of the coating liquid from the coating liquid discharge system to a second rate higher than the first rate, and the rotational speed of the substrate by the rotation holding unit during the first period.
  • a second rotation adjusting the rotation speed of the substrate by the rotation holding unit to a second speed higher than the first speed during a second period.
  • a speed adjustment unit adjusting the rotation speed of the substrate by the rotation holding unit to a second speed higher than the first speed during a second period.
  • the coating liquid is discharged at a first rate to the central portion of one surface of the substrate while the substrate rotates at a first speed in a first period.
  • the substrate is rotated at a second speed higher than the first speed and applied to the center of one surface of the substrate at a second rate higher than the first rate The liquid is discharged.
  • the coating liquid it is possible to stably spread the coating liquid on one surface of the substrate while suppressing the consumption of the coating liquid in the first period.
  • the second period even when the viscosity of the coating liquid is high, the fluidity of the coating liquid on one surface of the substrate is secured. Thereby, the coating liquid is prevented from being accumulated in a partial region of one surface of the substrate. Therefore, the uniformity of the thickness of the coating liquid on one surface of the substrate is enhanced. Therefore, the uniformity of the thickness of the film of the coating liquid formed on the substrate can be enhanced while suppressing the consumption of the coating liquid.
  • the substrate processing apparatus sets the rotation speed of the substrate by the rotation holding unit to a third speed higher than the first speed and lower than the second speed. It may further include a third rotation speed adjustment unit to be adjusted, and a discharge stop unit to stop the discharge of the application liquid in the third period.
  • the droplets of the coating liquid are one side of the substrate when the discharge of the coating liquid is stopped. Even when dropped onto the surface of the upper coating solution, the coating solution is stably held on one surface of the substrate. Thereby, the uniformity of the film thickness of the coating solution can be further improved.
  • the substrate processing apparatus sets the rotational speed of the substrate by the rotation holding unit to a fourth speed higher than the third speed and lower than the second speed. You may further provide the 4th rotational speed adjustment part to adjust.
  • the thickness of the film of the coating liquid on one surface of the substrate can be appropriately adjusted in the fourth period.
  • the coating liquid discharge system rotates the substrate by the rotation holding unit so that the coating liquid spreads on one surface of the substrate during the first period. Ejecting the coating solution at a first rate to the center of one surface and the thickness of the coating solution spread over the entire surface of the substrate during the second period after the first period, Discharging the coating liquid at a second rate higher than the first rate to the central portion of one surface of the substrate while rotating the substrate by the rotation holding unit.
  • the coating liquid is discharged at a first rate to the central portion of the one surface of the rotating substrate so that the coating liquid spreads on the one surface of the substrate.
  • the discharge rate of the coating solution is the first at the center of the one surface of the rotating substrate so that the thickness of the coating solution spread over the entire surface of the substrate increases. Ejected at a higher second rate.
  • the coating liquid since the coating liquid is discharged at a relatively low first rate in the first period, the coating liquid can be spread over one surface of the substrate while suppressing the consumption of the coating liquid.
  • the coating liquid since the coating liquid is discharged at a relatively high second rate during the second period, even when the viscosity of the coating liquid is high, the fluidity of the coating liquid on one surface of the substrate is secured. Thereby, the coating liquid is prevented from being accumulated in a partial region of one surface of the substrate. Therefore, the uniformity of the thickness of the coating liquid on one surface of the substrate is enhanced. Therefore, the uniformity of the thickness of the film of the coating liquid formed on the substrate can be enhanced while suppressing the consumption of the coating liquid.
  • the rotational speed of the substrate by the rotational holding unit is adjusted to the first speed in the first period, and the rotational speed of the substrate by the rotational holding unit is the first in the second period. Adjusting to a second speed higher than the speed of.
  • the substrate processing method In the substrate processing method according to still another aspect of the present invention, during the first period, while the substrate is rotated at the first speed by the rotation holding unit, the central portion of one surface of the substrate is And a second period after the first period, the substrate is rotated at a second speed higher than the first speed by the rotation holding unit, and the coating liquid discharge system is performed. And E. dispensing the coating solution at a second rate higher than the first rate on a central portion of one surface of the substrate.
  • the coating liquid is discharged at a first rate to the central portion of one surface of the substrate while the substrate rotates at a first speed in a first period.
  • the substrate is rotated at a second speed higher than the first speed and applied to the center of one surface of the substrate at a second rate higher than the first rate The liquid is discharged.
  • the coating liquid it is possible to stably spread the coating liquid on one surface of the substrate while suppressing the consumption of the coating liquid in the first period.
  • the second period even when the viscosity of the coating liquid is high, the fluidity of the coating liquid on one surface of the substrate is secured. Thereby, the coating liquid is prevented from being accumulated in a partial region of one surface of the substrate. Therefore, the uniformity of the thickness of the coating liquid on one surface of the substrate is enhanced. Therefore, the uniformity of the thickness of the film of the coating liquid formed on the substrate can be enhanced while suppressing the consumption of the coating liquid.
  • the rotational speed of the substrate by the rotation holding unit is set to a third speed higher than the first speed and lower than the second speed.
  • the method may further include the steps of adjusting and stopping the discharge of the application liquid in a third period.
  • the rotational speed of the substrate by the rotation holding unit is set to a fourth speed higher than the third speed and lower than the second speed. It may further include the step of adjusting.
  • the present invention it is possible to enhance the uniformity of the thickness of the film of the coating liquid formed on the substrate while suppressing the consumption of the coating liquid.
  • FIG. 1 is a schematic cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention.
  • FIG. 2 is a view showing the change in the rotational speed of the substrate in the substrate processing apparatus and the change in the discharge rate of the solvent and the resist solution.
  • FIG. 3 is a view showing a change in the state of the resist solution on the substrate in the film forming step.
  • FIG. 4 is a diagram for explaining the change in the rotational speed of the substrate and the change in the discharge rate of the resist solution in the comparative example.
  • FIG. 5 is a diagram showing changes in the state of the resist solution on the substrate in the comparative example.
  • FIG. 6 is a block diagram showing a functional configuration of the substrate processing apparatus.
  • FIG. 7 is a flowchart showing the operation of the substrate processing apparatus.
  • a resist solution is used as a coating solution.
  • FIG. 1 is a schematic cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention.
  • a substrate processing apparatus 100 is a rotary substrate processing apparatus, and includes a rotation holding unit 10, a shatterproof cup 20, a nozzle unit 30, and a control unit 40.
  • the rotation holding unit 10 is attached to the tip of the rotation shaft 12 of the motor 11, and is rotationally driven around the vertical axis in a state where the substrate W is held in the horizontal posture.
  • the diameter of the substrate W is, for example, 300 mm.
  • the cup 20 is provided to surround the periphery of the substrate W held by the rotary holding unit 10.
  • An opening 21 is formed on the upper surface side of the cup 20, and a waste liquid port 22 and a plurality of exhaust ports 23 are formed in the lower part of the cup 20.
  • the exhaust port 23 is connected to an exhaust system in the factory.
  • a straightening vane 24 is disposed below the rotation holding unit 10.
  • the baffle plate 24 has an inclined surface that inclines obliquely downward toward the outer peripheral portion.
  • the nozzle unit 30 includes a resist nozzle 31, a solvent nozzle 32, an edge rinse nozzle 33 and a back rinse nozzle 34.
  • the resist nozzle 31, the solvent nozzle 32 and the edge rinse nozzle 33 are vertically movable and movable between the upper position of the substrate W and the standby position outside the cup 20.
  • the back rinse nozzle 34 is provided below the substrate W.
  • the nozzle unit 30 includes two back rinse nozzles 34.
  • the resist nozzle 31 and the solvent nozzle 32 are located above the substantially central portion of the processing surface of the substrate W.
  • the edge rinse nozzle 33 is located above the peripheral edge of the processing surface of the substrate W.
  • the resist nozzle 31 is connected to a resist solution supply source P1 via a resist solution supply pipe T1.
  • the resist solution is stored in the resist solution supply source P1.
  • the viscosity of the resist solution is, for example, 20 cP or more and less than 500 cP, and preferably 100 cP or more and less than 200 cP.
  • a valve V1 and a pump 45 are interposed in the resist solution supply pipe T1.
  • the resist nozzle 31, the resist solution supply pipe T1, the valve V1, and the pump 45 constitute a resist solution discharge system 31A.
  • the resist solution is supplied from the resist solution supply source P1 to the resist nozzle 31 through the resist solution supply pipe T1.
  • the resist solution is discharged from the resist nozzle 31 to the surface to be processed of the substrate W.
  • the discharge rate of the resist solution from the resist nozzle 31 is adjusted by the pump 45.
  • the discharge rate represents the discharge amount per unit time.
  • the solvent nozzle 32 is connected to a solvent supply source P2 via a solvent supply pipe T2.
  • a solvent is stored in the solvent supply source P2.
  • the solvent includes, for example, PGMEA (propylene glycol monomethyl ether acetate: propylene glycol monomethyl ether acetate), PGME (propylene glycol monomethyl ether: propylene glycol monomethyl ether) or cyclohexanone.
  • a valve V2 is inserted in the solvent supply pipe T2. By opening the valve V2, the solvent is supplied from the solvent supply source P2 to the solvent nozzle 32 through the solvent supply pipe T2. Thus, the solvent is discharged from the solvent nozzle 32 to the surface to be processed of the substrate W.
  • the edge rinse nozzle 33 is connected to an edge rinse solution supply source P3 via an edge rinse solution supply pipe T3.
  • the edge rinse liquid supply source P3 stores a rinse liquid (hereinafter referred to as an edge rinse liquid) composed of the same solvent as the solvent stored in the solvent supply source P2.
  • a valve V3 is interposed in the edge rinse liquid supply pipe T3. By opening the valve V3, the edge rinse liquid is supplied from the edge rinse liquid supply source P3 to the edge rinse nozzle 33 through the edge rinse liquid supply pipe T3. Thereby, an edge rinse liquid for removing the film of the resist liquid is discharged from the edge rinse nozzle 33 to the peripheral portion of the processing surface of the substrate W.
  • the back rinse nozzle 34 is connected to a back rinse solution supply source P4 via a back rinse solution supply pipe T4.
  • the back rinse liquid supply source P4 stores a rinse liquid (hereinafter referred to as a back rinse liquid) composed of the same solvent as the solvent stored in the solvent supply source P2.
  • a valve V4 is inserted in the back rinse liquid supply pipe T4. By opening the valve V4, the back rinse liquid is supplied from the back rinse liquid supply source P4 to the back rinse nozzle 34 through the back rinse liquid supply pipe T4. Thereby, the back rinse liquid for washing the back surface (surface opposite to a processed surface) of the substrate W is discharged from the back rinse nozzle 34.
  • the resist nozzle 31 is provided upright with the discharge port of the resist solution facing downward, and the solvent nozzle 32 is provided upright with the discharge port of solvent facing downward.
  • the edge rinse nozzle 33 is provided in an inclined state such that the discharge port of the edge rinse liquid is directed obliquely downward and outward.
  • the back rinse nozzle 34 is provided in an upright state so that the discharge port of the back rinse liquid is directed upward.
  • the control unit 40 includes a CPU (central processing unit), a ROM (read only memory), a RAM (random access memory), a storage device, and the like.
  • the control unit 40 controls the rotation speed of the substrate W held by the rotation holding unit 10 by controlling the rotation speed of the motor 11. Further, the control unit 40 controls discharge timings of the resist solution, the solvent, the edge rinse solution, and the back rinse solution by controlling the valves V1 to V4. Further, the control unit 40 controls the discharge rate of the resist solution by controlling the pump 45.
  • FIG. 2 is a view showing the change in the rotational speed of the substrate W in the substrate processing apparatus 100 and the change in the discharge rate of the solvent and the resist solution.
  • the horizontal axis represents time
  • the vertical axis represents the rotation speed of the substrate W, and the discharge rate of the solvent and the resist solution.
  • the processing step of the substrate W includes a pre-wet step, a film forming step, a cleaning step and a drying step.
  • the pre-wet process the surface to be processed of the substrate W is wetted with a solvent.
  • a resist solution is applied onto the processing target surface of the substrate W.
  • the cleaning step the peripheral portion and the back surface of the surface to be processed of the substrate W are cleaned.
  • the drying step the substrate W is dried.
  • the substrate W is held by the rotation holding unit 10 in a state in which the processing surface is directed upward (see FIG. 1). In the initial state, the rotation of the substrate W is stopped, and the discharge of the resist solution, the solvent, the edge rinse solution, and the back rinse solution is stopped.
  • the pre-wet process is performed in the period from time t1 to time t2.
  • discharge of the solvent from the solvent nozzle 32 is started at time t1.
  • the solvent is discharged to the central portion of the processing surface of the substrate W.
  • the solvent is discharged at a constant discharge rate r0.
  • the discharge of the solvent is stopped at time t2.
  • the film forming step includes a first step, a second step, a third step and a fourth step.
  • the first step is performed in the period from time t3 to time t4
  • the second step is performed in the period from time t4 to time t5
  • the first step is performed in the period from time t5 to time t6.
  • the third process is performed
  • the fourth process is performed in the period from time t6 to time t7.
  • a period from time t3 to time t4 is an example of a first period
  • a period from time t4 to time t5 is an example of a second period
  • a period from time t5 to time t6 is a third period. This is an example
  • the period from time t6 to time t7 is an example of the fourth period.
  • the rotation of the substrate W is started and discharge of the resist solution from the resist nozzle 31 is started at time t3.
  • the resist solution is discharged to the central portion of the processing surface of the substrate W.
  • the rotational speed of the substrate W is adjusted to a first speed A1 so that the resist solution discharged to the central portion of the processed surface of the substrate W spreads on one surface of the substrate W, and the resist solution The discharge rate is adjusted to the first rate r1.
  • the first speed A1 is, for example, greater than 0 rpm and less than 500 rpm, and the first rate r1 is, for example, not less than 0.2 ml / s and less than 2 ml / s.
  • the resist solution may be discharged onto the surface to be processed of the substrate W while the rotation of the substrate W is stopped.
  • the rotational speed of the substrate W is adjusted to the second speed A2 so that the thickness of the resist solution spread over the entire processing surface of the substrate W is increased, and the discharge rate of the resist solution is the second Is adjusted to rate r2.
  • the rotational speed of the substrate W is increased from the first speed A1 to the intermediate speed A1 'at a first change rate in the period from time t3a to time t4
  • the rotational speed of the substrate W is timed from time t4. From the intermediate speed 1 'to the second speed A at a second rate of change.
  • the second rate of change is higher than the first rate of change.
  • the intermediate speed A1 ' is higher than the first speed A1 and lower than the second speed A2.
  • Intermediate speed A1 ' is 100 rpm or more and less than 1000 rpm, for example.
  • the second speed A2 is higher than the first speed A1, for example, 500 rpm or more and less than 4000 rpm.
  • the second rate r2 is higher than the first rate r1, for example, not less than 0.3 ml / s and less than 3 ml / s.
  • the rotational speed of the substrate W is decreased at time t5, and the discharge of the resist solution is stopped at time t6a.
  • the rotational speed of the substrate W is adjusted to a third speed A3.
  • the third speed A3 is, for example, higher than the first speed A1 and lower than the second speed A2.
  • the third speed A3 is, for example, greater than 0 rpm and less than 1000 rpm.
  • the rotation of the substrate W may be stopped.
  • the rotational speed of the substrate W is increased.
  • the rotational speed of the substrate W is adjusted to a fourth speed A4.
  • the fourth speed A4 is, for example, higher than the third speed A3 and lower than the second speed A2.
  • the fourth speed A4 is, for example, not less than 1000 rpm and less than 2000 rpm.
  • a film of a resist solution is formed on the surface to be processed of the substrate W. Details of the film formation process will be described later.
  • the cleaning process is performed in the period from time t7 to time t8.
  • the edge rinse nozzle 33 of FIG. 1 moves to the upper side of the peripheral portion of the substrate W
  • discharge of the edge rinse solution from the edge rinse nozzle 33 is started, and the back rinse solution of FIG. Dispensing is started.
  • the edge rinse liquid is discharged to the peripheral portion of the processing surface of the substrate W, and the back rinse liquid is discharged to the back surface of the substrate W.
  • the peripheral edge portion of the surface to be processed of the substrate W is cleaned by the edge rinse solution, and the back surface of the substrate W is cleaned by the back rinse solution.
  • the rotational speed of the substrate W in the cleaning step is set equal to the rotational speed (fourth speed A4) of the substrate W in the fourth step of the film forming step, but the rotational speed of the substrate W in the cleaning step However, it may be different from the rotation speed of the substrate W in the fourth step of the film formation step.
  • the drying step is performed in the period from time t8 to time t9.
  • the discharge of the edge rinse liquid and the back rinse liquid is stopped at time t8, and the rotational speed of the substrate W is increased.
  • the rotational speed of the substrate W is adjusted to the fifth speed A5.
  • the fifth speed A5 is, for example, 2000 rpm.
  • the edge rinse liquid and the back rinse liquid adhering to the substrate W are shaken off and removed from the substrate W. Thereafter, the rotation of the substrate W is stopped at time t9. Thus, a series of processing in the substrate processing apparatus 100 is completed.
  • the edge rinse liquid and the back rinse liquid are simultaneously started to be discharged at time t7, but the present invention is not limited thereto. Discharging of either the edge rinse solution or the back rinse solution may be started first. Further, in the example of FIG. 2, the discharge of the edge rinse liquid and the back rinse liquid is simultaneously stopped at time t8, but the present invention is not limited to this. The discharge of either the edge rinse solution or the back rinse solution may be stopped first.
  • FIG. 3 is a diagram showing changes in the state of the resist solution on the substrate W in the film forming step of FIG.
  • the substrate W is rotated at a relatively low first speed A1, and the resist solution is discharged at a relatively low first rate r1.
  • the resist solution discharged from the resist nozzle 31 onto the central portion of the processing surface of the substrate W is gradually spread outward in the radial direction of the processing surface of the substrate W.
  • the rotational speed of the substrate W is increased from the first speed A1 to the second speed A2.
  • a large centrifugal force acts on the resist solution on the substrate W, and the resist solution spreads over the entire treated surface of the substrate W so as to cover the entire treated surface of the substrate W.
  • the film L1 of the resist solution is formed on the processing target surface of the substrate W.
  • the intermediate speed A1 ′ to the second at the second change rate. It is increased to the speed A2.
  • the rotational speed of the substrate W is increased from the first speed A1 to the second speed A2 at a constant rate of change (for example, the second rate of change).
  • the resist solution spreads stably. Specifically, in plan view, the resist solution stably spreads radially outward while maintaining a substantially circular shape. Therefore, unnecessary consumption of the resist solution can be suppressed.
  • the substrate W is rotated at a relatively high second speed A2, and the resist solution is discharged at a relatively high second rate r2.
  • the thickness of the film L1 is generally increased.
  • the discharge rate of the resist solution is high, the fluidity of the resist solution on the processing target surface of the substrate W is secured.
  • the resist solution is prevented from being accumulated on a partial region of the processing surface of the substrate W, and the uniformity of the thickness of the film L1 is enhanced.
  • the discharge of the resist solution is stopped.
  • the centrifugal force acting on the resist solution on the substrate W is reduced, and the resist solution is slightly accumulated near the central portion and the outer edge of the surface to be processed of the substrate W.
  • the outer edge portion and the central portion of the film L1 are slightly raised upward.
  • the thickness of the outer edge portion of the film L1 is preferably smaller than the thickness of the central portion of the film L1.
  • the substrate W is rotated at a relatively high fourth speed A4.
  • the overall thickness of the film L1 on the substrate W is finely adjusted in accordance with the fourth velocity A4. Specifically, the higher the fourth speed A4, the smaller the overall thickness of the film L1, and the lower the fourth speed A4, the greater the overall thickness of the film L1.
  • the cross-sectional shape of the film L1 does not change significantly, and is substantially maintained in the state of FIG. 3 (d).
  • the film L1 is solidified.
  • FIG. 4 is a diagram for explaining the change in the rotational speed of the substrate W and the change in the discharge rate of the resist solution in the comparative example of the film formation step.
  • the film forming step of FIG. 4 is different from the film forming step of FIG. 2 in that the discharge rate of the resist solution is adjusted to the second rate r2 in the first step, and the discharge rate of the resist solution in the second step. Is adjusted to the first rate r1.
  • the third and fourth steps are the same as in the example of FIG.
  • FIG. 5 is a diagram showing changes in the state of the resist solution on the substrate W in the comparative example.
  • the substrate W is rotated at a relatively low first speed A1, and the resist solution is discharged at a relatively high second rate r2.
  • a relatively large amount of resist solution is supplied to the central portion of the processing surface of the substrate W, while the centrifugal force acting on the resist solution on the substrate W is relatively small. Therefore, when the viscosity of the resist solution is high, as shown in FIG. 5A, the resist solution tends to be accumulated on the central portion of the surface to be processed of the substrate W.
  • the substrate W is rotated at a relatively high second speed A2, and the resist solution is discharged at a relatively low first rate r1.
  • the discharge rate of the resist solution is low, the flowability of the resist solution discharged onto the central portion of the processing target surface of the substrate W is low. Therefore, the resist solution hardly reaches the outer edge of the processed surface of the substrate W, and is accumulated on the peripheral portion of the processed surface of the substrate W. Therefore, as shown in FIG. 5C, the peripheral portion of the film L1 bulges upward. Also in the subsequent third and fourth steps, the state in which the central portion and the peripheral portion of the film L1 are largely raised upward is maintained.
  • the thickness of the central portion and the peripheral portion of the film L1 largely bulges upward. Therefore, the uniformity of the thickness of the film L1 is reduced.
  • the discharge rate of the resist solution is adjusted to be relatively low in the first step, the consumption of the resist solution is suppressed while the resist solution consumption is suppressed even when the viscosity of the resist solution is high
  • the resist solution can be appropriately spread radially outward on the surface to be treated.
  • the discharge rate of the resist solution is adjusted to be relatively high in the second step, the flowability of the resist solution on the surface to be processed of the substrate W is secured even when the viscosity of the resist solution is high. Thereby, the resist solution can be prevented from being accumulated on the peripheral portion of the surface to be processed of the substrate W, and the uniformity of the thickness of the film L1 can be enhanced.
  • FIG. 6 is a block diagram showing a functional configuration of the substrate processing apparatus 100.
  • the substrate processing apparatus 100 includes a holding control unit 51, a discharge control unit 53, a first discharge rate adjustment unit 54, a second discharge rate adjustment unit 55, a first rotation speed adjustment unit 56, A second rotation speed adjustment unit 57, a third rotation speed adjustment unit 58, a fourth rotation speed adjustment unit 59, a fifth rotation speed adjustment unit 60, and a time control unit 61 are included.
  • the functions of these components (51 to 61) are realized by the CPU of the control unit 40 executing a computer program stored in a storage medium such as a ROM or a storage device.
  • the holding control unit 51 controls the holding of the substrate W by the rotation holding unit 10.
  • the discharge control unit 53 controls the timing of the start and end of discharge of the resist solution from the resist nozzle 31 (FIG. 1) by controlling the opening and closing of the valve V1.
  • the first discharge rate adjustment unit 54 controls the pump 45 to adjust the discharge rate of the resist solution from the resist nozzle 31 to a first rate r1.
  • the second discharge rate adjustment unit 55 controls the pump 45 to adjust the discharge rate of the resist solution from the resist nozzle 31 to a second rate r2.
  • the first rotational speed adjustment unit 56 controls the motor 11 to adjust the rotational speed of the substrate W to a first speed A1.
  • the second rotation speed adjustment unit 57 controls the motor 11 to adjust the rotation speed of the substrate W to a second speed A2.
  • the third rotation speed adjustment unit 58 controls the motor 11 to adjust the rotation speed of the substrate W to a third speed A3.
  • the fourth rotational speed adjustment unit 59 adjusts the rotational speed of the substrate W to a fourth speed A4 by controlling the motor 11.
  • the fifth rotation speed adjustment unit 60 controls the motor 11 to adjust the rotation speed of the substrate W to a fifth speed A5.
  • the time control unit 61 includes a holding control unit 51, a discharge control unit 53, a first discharge rate adjustment unit 54, a second discharge rate adjustment unit 55, a first rotation speed adjustment unit 56, and a second rotation speed adjustment unit. 57.
  • the timing of the start and end of the operation of the third rotation speed adjustment unit 58, the fourth rotation speed adjustment unit 59, and the fifth rotation speed adjustment unit 60 is controlled.
  • FIG. 7 is a flowchart showing the operation of the substrate processing apparatus 100.
  • the times of the pre-wetting step, the washing step and the drying step of FIG. 2 are predetermined as the pre-wetting time, the washing time and the drying time.
  • the times of the first step, the second step, the third step and the fourth step of the film forming step of FIG. 2 are as low rate processing time, high rate processing time, low speed rotation time and high speed rotation time. It is determined in advance.
  • valves V1 to V4 of FIG. 1 are closed.
  • the holding control unit 51 controls the rotation holding unit 10, and the rotation holding unit 10 holds the substrate W (step S1).
  • the discharge control unit 53 opens the valve V2 to start the discharge of the solvent from the solvent nozzle 32 (step S2).
  • the discharge control unit 53 closes the valve V2.
  • the first rotation speed adjustment unit 56 controls the rotation holding unit 10 to start the rotation of the substrate W (step S3).
  • the first rotational speed adjustment unit 56 adjusts the rotational speed of the substrate W to the first speed A1.
  • the discharge control unit 53 starts discharging the resist solution from the resist nozzle 31 by opening the valve V1 (step S4).
  • the first discharge rate adjustment unit 54 selects the discharge rate of the resist solution Adjust to a rate r1 of 1.
  • the second rotation speed adjustment unit 57 increases the rotation speed of the substrate W to the second speed A2 (step S5), and The discharge rate adjustment unit 55 raises the discharge rate of the resist solution to the second rate r2 (step S6).
  • the third rotation speed adjustment unit 58 reduces the rotation speed of the substrate W to the third speed A3 (step S7).
  • the discharge control unit 53 stops the discharge of the resist solution from the resist nozzle 31 by closing the valve V2 (step S8).
  • the fourth rotation speed adjustment unit 59 increases the rotation speed of the substrate W to the fourth speed A4 (step S9).
  • the discharge control unit 53 opens the valves V3 and V4 to discharge the edge rinse liquid from the edge rinse nozzle 33 and back from the back rinse nozzle 34. Discharge of the rinse liquid is started (step S10).
  • the discharge control unit 53 stops the discharge of the edge rinse liquid and the discharge of the back rinse liquid by closing the valves V3 and V4.
  • the fifth rotation speed adjustment unit 60 increases the rotation speed of the substrate W to the speed A5 (step S11). Thereby, the edge rinse liquid and the back rinse liquid are shaken off from the substrate W.
  • the fifth rotation speed adjustment unit 60 stops the rotation of the substrate W (step S12).
  • the holding control unit 51 releases the holding of the substrate W by the rotation holding unit 10 (step S13). Thereafter, the substrate W is received from above the rotation holding unit 10, and the series of operations of the substrate processing apparatus 100 are completed.
  • the resist solution discharged to the central portion of one surface (surface to be processed) of the rotating substrate W is the substrate W
  • the discharge rate of the resist solution is adjusted to the first rate r1 so as to spread on one side.
  • a second discharge rate of the resist solution is higher than the first rate r1 so that the thickness of the resist solution spread over the entire surface of the rotating substrate W is increased. It is adjusted to rate r2.
  • the resist solution since the resist solution is discharged at a relatively low first rate r1 in the first step, the resist solution can be spread on one surface of the substrate W while suppressing the consumption of the resist solution.
  • the resist solution since the resist solution is discharged at a relatively high second rate r2 in the second step, the fluidity of the resist solution on one surface of the substrate W is secured even when the viscosity of the resist solution is high. Ru.
  • the resist solution is prevented from being accumulated in a partial region of one surface of the substrate W. Therefore, the uniformity of the thickness of the resist solution on one surface of the substrate W is enhanced. Therefore, the uniformity of the thickness of the film of the resist solution formed on the substrate W can be enhanced while suppressing the consumption of the resist solution.
  • the rotational speed of the substrate W is adjusted to the first speed A1 in the first step, and the rotational speed of the substrate W is higher than the first speed A1 in the second step. It is adjusted to speed A2.
  • the substrate W rotates at a relatively low speed in the first step, the resist solution can be stably spread on one surface of the substrate W.
  • the consumption of the resist solution can be further suppressed.
  • the centrifugal force acting on the resist solution is increased.
  • the resist solution can be appropriately spread to the outer edge of one surface of the substrate W, and the uniformity of the thickness of the resist solution can be further enhanced.
  • the discharge of the resist solution is stopped after the rotational speed of the substrate W is lowered to the third speed A3.
  • the formation of a drop mark is prevented and the resist solution on the substrate W is stable.
  • the rotational speed of the substrate W is adjusted to the fourth speed A4 higher than the third speed A3.
  • the thickness of the film of the resist solution on one surface of the substrate W can be appropriately adjusted in the fourth step.
  • the discharge rate of the resist solution is adjusted to the first rate r1 in the first step, and the discharge rate of the resist solution is the first in the second step.
  • the discharge rate of the resist solution may be adjusted in a plurality of steps including the first rate r1.
  • the discharge rate of the resist solution is adjusted to the second rate r2. It may be adjusted to multiple stages including the rate r2 of.
  • the discharge rate of the resist solution may be adjusted to be changed continuously.
  • the rotational speed of the substrate W is adjusted to the first speed A1 in the first step, and the rotational speed of the substrate W is adjusted to the second speed A2 in the second step.
  • the rotational speed of the substrate W may be adjusted in multiple steps including the first speed A1
  • the rotational speed of the substrate W is in multiple steps including the second speed A2. It may be adjusted.
  • the rotational speed of the substrate W may be adjusted so as to change continuously.
  • the timing at which the rotational speed of the substrate W is adjusted to the first speed A1 and the timing at which the discharge rate of the resist solution is adjusted to the first rate r1 are the same. These timings may be offset from each other.
  • the timing at which the rotational speed of the substrate W is adjusted to the second speed A2 and the timing at which the discharge rate of the resist solution is adjusted to the second rate r2 are the same. These timings may be offset from each other.
  • the discharge of the resist solution is stopped after the rotational speed of the substrate W is lowered from the second speed A2 to the third speed A3, but the substrate W has a second speed A2
  • the discharge of the resist solution may be stopped in the state of being rotated by the
  • a resist solution is used as the coating solution, but instead of the resist solution, another coating solution such as a lower layer film coating solution or an interlayer insulating film coating solution may be used.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Coating Apparatus (AREA)
PCT/JP2018/028337 2017-08-30 2018-07-27 基板処理装置および基板処理方法 WO2019044314A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020197030074A KR102296706B1 (ko) 2017-08-30 2018-07-27 기판 처리 장치 및 기판 처리 방법
CN201880025759.1A CN110537245B (zh) 2017-08-30 2018-07-27 衬底处理装置及衬底处理方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-165379 2017-08-30
JP2017165379A JP6873011B2 (ja) 2017-08-30 2017-08-30 基板処理装置および基板処理方法

Publications (1)

Publication Number Publication Date
WO2019044314A1 true WO2019044314A1 (ja) 2019-03-07

Family

ID=65526446

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2018/028337 WO2019044314A1 (ja) 2017-08-30 2018-07-27 基板処理装置および基板処理方法

Country Status (5)

Country Link
JP (1) JP6873011B2 (enrdf_load_stackoverflow)
KR (1) KR102296706B1 (enrdf_load_stackoverflow)
CN (1) CN110537245B (enrdf_load_stackoverflow)
TW (1) TWI669751B (enrdf_load_stackoverflow)
WO (1) WO2019044314A1 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115365084A (zh) * 2021-05-20 2022-11-22 株式会社斯库林集团 涂布处理方法及涂布处理装置

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12216406B2 (en) 2019-07-04 2025-02-04 Tokyo Electron Limited Coating method and coating apparatus
JP7339150B2 (ja) * 2019-12-20 2023-09-05 ラピスセミコンダクタ株式会社 基板処理装置、基板処理方法
KR102682854B1 (ko) 2020-06-02 2024-07-10 세메스 주식회사 기판 처리 방법 및 기판 처리 장치
JP7520665B2 (ja) * 2020-09-25 2024-07-23 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
JP7598821B2 (ja) 2021-05-20 2024-12-12 株式会社Ｓｃｒｅｅｎホールディングス 塗布処理方法および塗布処理装置
KR102600411B1 (ko) * 2021-08-12 2023-11-09 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP2023102138A (ja) * 2022-01-11 2023-07-24 東京エレクトロン株式会社 塗布膜形成方法、塗布膜形成装置及びプログラム
KR102488391B1 (ko) 2022-01-11 2023-01-13 (주)예성글로벌 도어클로저 기능을 갖는 패닉바
JP2024127644A (ja) 2023-03-09 2024-09-20 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009207997A (ja) * 2008-03-04 2009-09-17 Toshiba Corp 回転塗布方法、および回転塗布装置
JP2009207984A (ja) * 2008-03-04 2009-09-17 Tokyo Electron Ltd 塗布処理方法、プログラム、コンピュータ記憶媒体及び塗布処理装置
JP2016096345A (ja) * 2015-12-04 2016-05-26 株式会社東芝 回転塗布装置および回転塗布方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100284556B1 (ko) * 1993-03-25 2001-04-02 다카시마 히로시 도포막 형성방법 및 그를 위한 장치
JP3471168B2 (ja) * 1996-04-25 2003-11-25 大日本スクリーン製造株式会社 基板処理方法およびその装置
JP3527459B2 (ja) 2000-04-12 2004-05-17 東京エレクトロン株式会社 塗布膜形成方法および塗布処理装置
JP5065071B2 (ja) * 2007-03-15 2012-10-31 東京エレクトロン株式会社 塗布処理方法、塗布処理装置及びコンピュータ読み取り可能な記憶媒体
KR101447759B1 (ko) * 2008-12-16 2014-10-06 도쿄엘렉트론가부시키가이샤 도포 처리 방법 및 도포 처리 장치
JP5485672B2 (ja) * 2009-12-07 2014-05-07 株式会社Ｓｏｋｕｄｏ 基板処理装置および基板処理方法
JP5337180B2 (ja) * 2010-04-08 2013-11-06 東京エレクトロン株式会社 塗布処理方法、プログラム、コンピュータ記憶媒体及び塗布処理装置
JP2014050803A (ja) * 2012-09-07 2014-03-20 Toshiba Corp 回転塗布装置および回転塗布方法
TWI666684B (zh) * 2015-11-16 2019-07-21 日商東京威力科創股份有限公司 塗佈膜形成方法、塗佈膜形成裝置及記憶媒體

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009207997A (ja) * 2008-03-04 2009-09-17 Toshiba Corp 回転塗布方法、および回転塗布装置
JP2009207984A (ja) * 2008-03-04 2009-09-17 Tokyo Electron Ltd 塗布処理方法、プログラム、コンピュータ記憶媒体及び塗布処理装置
JP2016096345A (ja) * 2015-12-04 2016-05-26 株式会社東芝 回転塗布装置および回転塗布方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115365084A (zh) * 2021-05-20 2022-11-22 株式会社斯库林集团 涂布处理方法及涂布处理装置

Also Published As

Publication number Publication date
KR102296706B1 (ko) 2021-09-01
TW201913728A (zh) 2019-04-01
CN110537245B (zh) 2023-05-02
KR20190125469A (ko) 2019-11-06
TWI669751B (zh) 2019-08-21
CN110537245A (zh) 2019-12-03
JP2019046850A (ja) 2019-03-22
JP6873011B2 (ja) 2021-05-19

Similar Documents

Publication Publication Date Title
WO2019044314A1 (ja) 基板処理装置および基板処理方法
CN101615568B (zh) 基板清洗方法以及显影装置
EP1975979B1 (en) Coating apparatus and coating method
TWI614066B (zh) 塗佈方法
US10144033B2 (en) Substrate processing apparatus and substrate processing method
US8580340B2 (en) Substrate processing apparatus and substrate processing method
JP6712482B2 (ja) 基板処理方法および基板処理装置
JP7235594B2 (ja) 基板処理方法および基板処理装置
JPWO2018079494A1 (ja) 液処理方法及び液処理装置
JP2009004597A (ja) 基板現像方法および現像装置
JP3558471B2 (ja) 基板塗布装置の薬液供給ノズル待機方法およびその装置
JPH11168041A (ja) レジスト膜の形成方法
JP3451158B2 (ja) 基板の回転式現像処理方法及び装置
JP2000077293A (ja) 基板処理方法およびその装置
CN109219865A (zh) 基板处理方法及基板处理装置
JP7136543B2 (ja) 基板処理方法および基板処理装置
KR100359249B1 (ko) 반사방지막의 기포 제거 방법
JP2002343704A (ja) 塗付膜形成方法およびその装置
JPH10144589A (ja) 半導体装置の現像処理方法
JPH0414813A (ja) レジスト塗布装置およびレジスト塗布方法
JP2018176077A (ja) 液体吐出ヘッドの製造方法
JP2003229421A (ja) Ｓｏｇ塗布装置及びｓｏｇ塗布方法
JP2580082C (enrdf_load_stackoverflow)
JP2000100712A (ja) レジスト塗布装置及びレジスト塗布方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18850535

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 20197030074

Country of ref document: KR

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18850535

Country of ref document: EP

Kind code of ref document: A1