WO2019044314A1 - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

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Publication number
WO2019044314A1
WO2019044314A1 PCT/JP2018/028337 JP2018028337W WO2019044314A1 WO 2019044314 A1 WO2019044314 A1 WO 2019044314A1 JP 2018028337 W JP2018028337 W JP 2018028337W WO 2019044314 A1 WO2019044314 A1 WO 2019044314A1
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WO
WIPO (PCT)
Prior art keywords
substrate
speed
period
coating liquid
rate
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PCT/JP2018/028337
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French (fr)
Japanese (ja)
Inventor
雄大 和食
栄寿 佐川
Original Assignee
株式会社Ｓｃｒｅｅｎホールディングス
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Application filed by 株式会社Ｓｃｒｅｅｎホールディングス filed Critical 株式会社Ｓｃｒｅｅｎホールディングス
Priority to KR1020197030074A priority Critical patent/KR102296706B1/en
Priority to CN201880025759.1A priority patent/CN110537245B/en
Publication of WO2019044314A1 publication Critical patent/WO2019044314A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/02—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface
    • B05C11/08—Spreading liquid or other fluent material by manipulating the work, e.g. tilting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/10—Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/40—Distributing applied liquids or other fluent materials by members moving relatively to surface
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

Definitions

  • the present invention relates to a substrate processing apparatus and a substrate processing method for forming a film of a coating liquid on a substrate.
  • a coating solution such as a resist solution is applied to a substrate by a substrate processing apparatus in order to form a pattern on the substrate by exposure processing.
  • the film processing unit described in Patent Document 1 includes a spin chuck, a solvent discharge nozzle, and a resist solution discharge nozzle. After the substrate is held horizontally by the spin chuck and the solvent is discharged onto the substrate from the solvent discharge nozzle, the rotation of the substrate is started and the resist solution is discharged onto the substrate from the resist solution discharge nozzle. Next, in a state where the substrate is rotated, the discharge speed of the resist solution is reduced to a second discharge speed lower than the first discharge speed. Thereafter, the discharge of the resist solution and the rotation of the substrate are stopped. JP, 2001-297964, A
  • An object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of enhancing the uniformity of the thickness of a film of a coating liquid formed on a substrate while suppressing the consumption of the coating liquid.
  • a substrate processing apparatus includes: a rotary holding unit that holds and rotates a substrate in a horizontal posture; and a coating liquid discharge that discharges a coating liquid to a central portion of one surface of the substrate rotated by the rotary holding unit.
  • the rate of discharge of the coating liquid from the coating liquid discharge system is set so that the coating liquid discharged from the coating liquid discharge system to the central portion of the one surface of the substrate spreads over the one surface of the substrate during the first period.
  • a second discharge rate adjustment unit configured to adjust the discharge rate of the coating liquid to a second rate higher than the first rate.
  • the discharge rate of the coating liquid is adjusted to the first rate so that the coating liquid discharged to the central portion of the one surface of the rotating substrate spreads over the one surface of the substrate during the first period.
  • Ru The second rate at which the discharge rate of the coating liquid is higher than the first rate so that the thickness of the coating liquid spread over the entire surface of the rotating substrate is increased in the second period after the first period.
  • the coating liquid since the coating liquid is discharged at a relatively low first rate in the first period, the coating liquid can be spread over one surface of the substrate while suppressing the consumption of the coating liquid.
  • the coating liquid since the coating liquid is discharged at a relatively high second rate during the second period, even when the viscosity of the coating liquid is high, the fluidity of the coating liquid on one surface of the substrate is secured. Thereby, the coating liquid is prevented from being accumulated in a partial region of one surface of the substrate. Therefore, the uniformity of the thickness of the coating liquid on one surface of the substrate is enhanced. Therefore, the uniformity of the thickness of the film of the coating liquid formed on the substrate can be enhanced while suppressing the consumption of the coating liquid.
  • the substrate processing apparatus includes a first rotation speed adjustment unit that adjusts the rotation speed of the substrate by the rotation holding unit to the first speed during the first period, and a substrate by the rotation holding unit during the second period. And a second rotation speed adjustment unit which adjusts the rotation speed of the second rotation speed to a second speed higher than the first speed.
  • the coating solution can be stably spread on one surface of the substrate. Thereby, the consumption of the coating liquid is further suppressed.
  • the substrate rotates at a relatively high second speed during the second period, the centrifugal force acting on the coating solution is increased.
  • the coating liquid can be appropriately spread to the outer edge of one surface of the substrate, and the uniformity of the thickness of the coating liquid can be further enhanced.
  • a substrate processing apparatus includes a rotation holding unit that holds and rotates a substrate in a horizontal posture, and a coating liquid that discharges a coating liquid to a central portion of one surface of the substrate rotated by the rotation holding unit.
  • a discharge system a first discharge rate adjustment unit that adjusts a discharge rate of the application liquid from the coating liquid discharge system to a first rate in a first period, and a second period after the first period
  • a second discharge rate adjustment unit that adjusts the discharge rate of the coating liquid from the coating liquid discharge system to a second rate higher than the first rate, and the rotational speed of the substrate by the rotation holding unit during the first period.
  • a second rotation adjusting the rotation speed of the substrate by the rotation holding unit to a second speed higher than the first speed during a second period.
  • a speed adjustment unit adjusting the rotation speed of the substrate by the rotation holding unit to a second speed higher than the first speed during a second period.
  • the coating liquid is discharged at a first rate to the central portion of one surface of the substrate while the substrate rotates at a first speed in a first period.
  • the substrate is rotated at a second speed higher than the first speed and applied to the center of one surface of the substrate at a second rate higher than the first rate The liquid is discharged.
  • the coating liquid it is possible to stably spread the coating liquid on one surface of the substrate while suppressing the consumption of the coating liquid in the first period.
  • the second period even when the viscosity of the coating liquid is high, the fluidity of the coating liquid on one surface of the substrate is secured. Thereby, the coating liquid is prevented from being accumulated in a partial region of one surface of the substrate. Therefore, the uniformity of the thickness of the coating liquid on one surface of the substrate is enhanced. Therefore, the uniformity of the thickness of the film of the coating liquid formed on the substrate can be enhanced while suppressing the consumption of the coating liquid.
  • the substrate processing apparatus sets the rotation speed of the substrate by the rotation holding unit to a third speed higher than the first speed and lower than the second speed. It may further include a third rotation speed adjustment unit to be adjusted, and a discharge stop unit to stop the discharge of the application liquid in the third period.
  • the droplets of the coating liquid are one side of the substrate when the discharge of the coating liquid is stopped. Even when dropped onto the surface of the upper coating solution, the coating solution is stably held on one surface of the substrate. Thereby, the uniformity of the film thickness of the coating solution can be further improved.
  • the substrate processing apparatus sets the rotational speed of the substrate by the rotation holding unit to a fourth speed higher than the third speed and lower than the second speed. You may further provide the 4th rotational speed adjustment part to adjust.
  • the thickness of the film of the coating liquid on one surface of the substrate can be appropriately adjusted in the fourth period.
  • the coating liquid discharge system rotates the substrate by the rotation holding unit so that the coating liquid spreads on one surface of the substrate during the first period. Ejecting the coating solution at a first rate to the center of one surface and the thickness of the coating solution spread over the entire surface of the substrate during the second period after the first period, Discharging the coating liquid at a second rate higher than the first rate to the central portion of one surface of the substrate while rotating the substrate by the rotation holding unit.
  • the coating liquid is discharged at a first rate to the central portion of the one surface of the rotating substrate so that the coating liquid spreads on the one surface of the substrate.
  • the discharge rate of the coating solution is the first at the center of the one surface of the rotating substrate so that the thickness of the coating solution spread over the entire surface of the substrate increases. Ejected at a higher second rate.
  • the coating liquid since the coating liquid is discharged at a relatively low first rate in the first period, the coating liquid can be spread over one surface of the substrate while suppressing the consumption of the coating liquid.
  • the coating liquid since the coating liquid is discharged at a relatively high second rate during the second period, even when the viscosity of the coating liquid is high, the fluidity of the coating liquid on one surface of the substrate is secured. Thereby, the coating liquid is prevented from being accumulated in a partial region of one surface of the substrate. Therefore, the uniformity of the thickness of the coating liquid on one surface of the substrate is enhanced. Therefore, the uniformity of the thickness of the film of the coating liquid formed on the substrate can be enhanced while suppressing the consumption of the coating liquid.
  • the rotational speed of the substrate by the rotational holding unit is adjusted to the first speed in the first period, and the rotational speed of the substrate by the rotational holding unit is the first in the second period. Adjusting to a second speed higher than the speed of.
  • the substrate processing method In the substrate processing method according to still another aspect of the present invention, during the first period, while the substrate is rotated at the first speed by the rotation holding unit, the central portion of one surface of the substrate is And a second period after the first period, the substrate is rotated at a second speed higher than the first speed by the rotation holding unit, and the coating liquid discharge system is performed. And E. dispensing the coating solution at a second rate higher than the first rate on a central portion of one surface of the substrate.
  • the coating liquid is discharged at a first rate to the central portion of one surface of the substrate while the substrate rotates at a first speed in a first period.
  • the substrate is rotated at a second speed higher than the first speed and applied to the center of one surface of the substrate at a second rate higher than the first rate The liquid is discharged.
  • the coating liquid it is possible to stably spread the coating liquid on one surface of the substrate while suppressing the consumption of the coating liquid in the first period.
  • the second period even when the viscosity of the coating liquid is high, the fluidity of the coating liquid on one surface of the substrate is secured. Thereby, the coating liquid is prevented from being accumulated in a partial region of one surface of the substrate. Therefore, the uniformity of the thickness of the coating liquid on one surface of the substrate is enhanced. Therefore, the uniformity of the thickness of the film of the coating liquid formed on the substrate can be enhanced while suppressing the consumption of the coating liquid.
  • the rotational speed of the substrate by the rotation holding unit is set to a third speed higher than the first speed and lower than the second speed.
  • the method may further include the steps of adjusting and stopping the discharge of the application liquid in a third period.
  • the rotational speed of the substrate by the rotation holding unit is set to a fourth speed higher than the third speed and lower than the second speed. It may further include the step of adjusting.
  • the present invention it is possible to enhance the uniformity of the thickness of the film of the coating liquid formed on the substrate while suppressing the consumption of the coating liquid.
  • FIG. 1 is a schematic cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention.
  • FIG. 2 is a view showing the change in the rotational speed of the substrate in the substrate processing apparatus and the change in the discharge rate of the solvent and the resist solution.
  • FIG. 3 is a view showing a change in the state of the resist solution on the substrate in the film forming step.
  • FIG. 4 is a diagram for explaining the change in the rotational speed of the substrate and the change in the discharge rate of the resist solution in the comparative example.
  • FIG. 5 is a diagram showing changes in the state of the resist solution on the substrate in the comparative example.
  • FIG. 6 is a block diagram showing a functional configuration of the substrate processing apparatus.
  • FIG. 7 is a flowchart showing the operation of the substrate processing apparatus.
  • a resist solution is used as a coating solution.
  • FIG. 1 is a schematic cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention.
  • a substrate processing apparatus 100 is a rotary substrate processing apparatus, and includes a rotation holding unit 10, a shatterproof cup 20, a nozzle unit 30, and a control unit 40.
  • the rotation holding unit 10 is attached to the tip of the rotation shaft 12 of the motor 11, and is rotationally driven around the vertical axis in a state where the substrate W is held in the horizontal posture.
  • the diameter of the substrate W is, for example, 300 mm.
  • the cup 20 is provided to surround the periphery of the substrate W held by the rotary holding unit 10.
  • An opening 21 is formed on the upper surface side of the cup 20, and a waste liquid port 22 and a plurality of exhaust ports 23 are formed in the lower part of the cup 20.
  • the exhaust port 23 is connected to an exhaust system in the factory.
  • a straightening vane 24 is disposed below the rotation holding unit 10.
  • the baffle plate 24 has an inclined surface that inclines obliquely downward toward the outer peripheral portion.
  • the nozzle unit 30 includes a resist nozzle 31, a solvent nozzle 32, an edge rinse nozzle 33 and a back rinse nozzle 34.
  • the resist nozzle 31, the solvent nozzle 32 and the edge rinse nozzle 33 are vertically movable and movable between the upper position of the substrate W and the standby position outside the cup 20.
  • the back rinse nozzle 34 is provided below the substrate W.
  • the nozzle unit 30 includes two back rinse nozzles 34.
  • the resist nozzle 31 and the solvent nozzle 32 are located above the substantially central portion of the processing surface of the substrate W.
  • the edge rinse nozzle 33 is located above the peripheral edge of the processing surface of the substrate W.
  • the resist nozzle 31 is connected to a resist solution supply source P1 via a resist solution supply pipe T1.
  • the resist solution is stored in the resist solution supply source P1.
  • the viscosity of the resist solution is, for example, 20 cP or more and less than 500 cP, and preferably 100 cP or more and less than 200 cP.
  • a valve V1 and a pump 45 are interposed in the resist solution supply pipe T1.
  • the resist nozzle 31, the resist solution supply pipe T1, the valve V1, and the pump 45 constitute a resist solution discharge system 31A.
  • the resist solution is supplied from the resist solution supply source P1 to the resist nozzle 31 through the resist solution supply pipe T1.
  • the resist solution is discharged from the resist nozzle 31 to the surface to be processed of the substrate W.
  • the discharge rate of the resist solution from the resist nozzle 31 is adjusted by the pump 45.
  • the discharge rate represents the discharge amount per unit time.
  • the solvent nozzle 32 is connected to a solvent supply source P2 via a solvent supply pipe T2.
  • a solvent is stored in the solvent supply source P2.
  • the solvent includes, for example, PGMEA (propylene glycol monomethyl ether acetate: propylene glycol monomethyl ether acetate), PGME (propylene glycol monomethyl ether: propylene glycol monomethyl ether) or cyclohexanone.
  • a valve V2 is inserted in the solvent supply pipe T2. By opening the valve V2, the solvent is supplied from the solvent supply source P2 to the solvent nozzle 32 through the solvent supply pipe T2. Thus, the solvent is discharged from the solvent nozzle 32 to the surface to be processed of the substrate W.
  • the edge rinse nozzle 33 is connected to an edge rinse solution supply source P3 via an edge rinse solution supply pipe T3.
  • the edge rinse liquid supply source P3 stores a rinse liquid (hereinafter referred to as an edge rinse liquid) composed of the same solvent as the solvent stored in the solvent supply source P2.
  • a valve V3 is interposed in the edge rinse liquid supply pipe T3. By opening the valve V3, the edge rinse liquid is supplied from the edge rinse liquid supply source P3 to the edge rinse nozzle 33 through the edge rinse liquid supply pipe T3. Thereby, an edge rinse liquid for removing the film of the resist liquid is discharged from the edge rinse nozzle 33 to the peripheral portion of the processing surface of the substrate W.
  • the back rinse nozzle 34 is connected to a back rinse solution supply source P4 via a back rinse solution supply pipe T4.
  • the back rinse liquid supply source P4 stores a rinse liquid (hereinafter referred to as a back rinse liquid) composed of the same solvent as the solvent stored in the solvent supply source P2.
  • a valve V4 is inserted in the back rinse liquid supply pipe T4. By opening the valve V4, the back rinse liquid is supplied from the back rinse liquid supply source P4 to the back rinse nozzle 34 through the back rinse liquid supply pipe T4. Thereby, the back rinse liquid for washing the back surface (surface opposite to a processed surface) of the substrate W is discharged from the back rinse nozzle 34.
  • the resist nozzle 31 is provided upright with the discharge port of the resist solution facing downward, and the solvent nozzle 32 is provided upright with the discharge port of solvent facing downward.
  • the edge rinse nozzle 33 is provided in an inclined state such that the discharge port of the edge rinse liquid is directed obliquely downward and outward.
  • the back rinse nozzle 34 is provided in an upright state so that the discharge port of the back rinse liquid is directed upward.
  • the control unit 40 includes a CPU (central processing unit), a ROM (read only memory), a RAM (random access memory), a storage device, and the like.
  • the control unit 40 controls the rotation speed of the substrate W held by the rotation holding unit 10 by controlling the rotation speed of the motor 11. Further, the control unit 40 controls discharge timings of the resist solution, the solvent, the edge rinse solution, and the back rinse solution by controlling the valves V1 to V4. Further, the control unit 40 controls the discharge rate of the resist solution by controlling the pump 45.
  • FIG. 2 is a view showing the change in the rotational speed of the substrate W in the substrate processing apparatus 100 and the change in the discharge rate of the solvent and the resist solution.
  • the horizontal axis represents time
  • the vertical axis represents the rotation speed of the substrate W, and the discharge rate of the solvent and the resist solution.
  • the processing step of the substrate W includes a pre-wet step, a film forming step, a cleaning step and a drying step.
  • the pre-wet process the surface to be processed of the substrate W is wetted with a solvent.
  • a resist solution is applied onto the processing target surface of the substrate W.
  • the cleaning step the peripheral portion and the back surface of the surface to be processed of the substrate W are cleaned.
  • the drying step the substrate W is dried.
  • the substrate W is held by the rotation holding unit 10 in a state in which the processing surface is directed upward (see FIG. 1). In the initial state, the rotation of the substrate W is stopped, and the discharge of the resist solution, the solvent, the edge rinse solution, and the back rinse solution is stopped.
  • the pre-wet process is performed in the period from time t1 to time t2.
  • discharge of the solvent from the solvent nozzle 32 is started at time t1.
  • the solvent is discharged to the central portion of the processing surface of the substrate W.
  • the solvent is discharged at a constant discharge rate r0.
  • the discharge of the solvent is stopped at time t2.
  • the film forming step includes a first step, a second step, a third step and a fourth step.
  • the first step is performed in the period from time t3 to time t4
  • the second step is performed in the period from time t4 to time t5
  • the first step is performed in the period from time t5 to time t6.
  • the third process is performed
  • the fourth process is performed in the period from time t6 to time t7.
  • a period from time t3 to time t4 is an example of a first period
  • a period from time t4 to time t5 is an example of a second period
  • a period from time t5 to time t6 is a third period. This is an example
  • the period from time t6 to time t7 is an example of the fourth period.
  • the rotation of the substrate W is started and discharge of the resist solution from the resist nozzle 31 is started at time t3.
  • the resist solution is discharged to the central portion of the processing surface of the substrate W.
  • the rotational speed of the substrate W is adjusted to a first speed A1 so that the resist solution discharged to the central portion of the processed surface of the substrate W spreads on one surface of the substrate W, and the resist solution The discharge rate is adjusted to the first rate r1.
  • the first speed A1 is, for example, greater than 0 rpm and less than 500 rpm, and the first rate r1 is, for example, not less than 0.2 ml / s and less than 2 ml / s.
  • the resist solution may be discharged onto the surface to be processed of the substrate W while the rotation of the substrate W is stopped.
  • the rotational speed of the substrate W is adjusted to the second speed A2 so that the thickness of the resist solution spread over the entire processing surface of the substrate W is increased, and the discharge rate of the resist solution is the second Is adjusted to rate r2.
  • the rotational speed of the substrate W is increased from the first speed A1 to the intermediate speed A1 'at a first change rate in the period from time t3a to time t4
  • the rotational speed of the substrate W is timed from time t4. From the intermediate speed 1 'to the second speed A at a second rate of change.
  • the second rate of change is higher than the first rate of change.
  • the intermediate speed A1 ' is higher than the first speed A1 and lower than the second speed A2.
  • Intermediate speed A1 ' is 100 rpm or more and less than 1000 rpm, for example.
  • the second speed A2 is higher than the first speed A1, for example, 500 rpm or more and less than 4000 rpm.
  • the second rate r2 is higher than the first rate r1, for example, not less than 0.3 ml / s and less than 3 ml / s.
  • the rotational speed of the substrate W is decreased at time t5, and the discharge of the resist solution is stopped at time t6a.
  • the rotational speed of the substrate W is adjusted to a third speed A3.
  • the third speed A3 is, for example, higher than the first speed A1 and lower than the second speed A2.
  • the third speed A3 is, for example, greater than 0 rpm and less than 1000 rpm.
  • the rotation of the substrate W may be stopped.
  • the rotational speed of the substrate W is increased.
  • the rotational speed of the substrate W is adjusted to a fourth speed A4.
  • the fourth speed A4 is, for example, higher than the third speed A3 and lower than the second speed A2.
  • the fourth speed A4 is, for example, not less than 1000 rpm and less than 2000 rpm.
  • a film of a resist solution is formed on the surface to be processed of the substrate W. Details of the film formation process will be described later.
  • the cleaning process is performed in the period from time t7 to time t8.
  • the edge rinse nozzle 33 of FIG. 1 moves to the upper side of the peripheral portion of the substrate W
  • discharge of the edge rinse solution from the edge rinse nozzle 33 is started, and the back rinse solution of FIG. Dispensing is started.
  • the edge rinse liquid is discharged to the peripheral portion of the processing surface of the substrate W, and the back rinse liquid is discharged to the back surface of the substrate W.
  • the peripheral edge portion of the surface to be processed of the substrate W is cleaned by the edge rinse solution, and the back surface of the substrate W is cleaned by the back rinse solution.
  • the rotational speed of the substrate W in the cleaning step is set equal to the rotational speed (fourth speed A4) of the substrate W in the fourth step of the film forming step, but the rotational speed of the substrate W in the cleaning step However, it may be different from the rotation speed of the substrate W in the fourth step of the film formation step.
  • the drying step is performed in the period from time t8 to time t9.
  • the discharge of the edge rinse liquid and the back rinse liquid is stopped at time t8, and the rotational speed of the substrate W is increased.
  • the rotational speed of the substrate W is adjusted to the fifth speed A5.
  • the fifth speed A5 is, for example, 2000 rpm.
  • the edge rinse liquid and the back rinse liquid adhering to the substrate W are shaken off and removed from the substrate W. Thereafter, the rotation of the substrate W is stopped at time t9. Thus, a series of processing in the substrate processing apparatus 100 is completed.
  • the edge rinse liquid and the back rinse liquid are simultaneously started to be discharged at time t7, but the present invention is not limited thereto. Discharging of either the edge rinse solution or the back rinse solution may be started first. Further, in the example of FIG. 2, the discharge of the edge rinse liquid and the back rinse liquid is simultaneously stopped at time t8, but the present invention is not limited to this. The discharge of either the edge rinse solution or the back rinse solution may be stopped first.
  • FIG. 3 is a diagram showing changes in the state of the resist solution on the substrate W in the film forming step of FIG.
  • the substrate W is rotated at a relatively low first speed A1, and the resist solution is discharged at a relatively low first rate r1.
  • the resist solution discharged from the resist nozzle 31 onto the central portion of the processing surface of the substrate W is gradually spread outward in the radial direction of the processing surface of the substrate W.
  • the rotational speed of the substrate W is increased from the first speed A1 to the second speed A2.
  • a large centrifugal force acts on the resist solution on the substrate W, and the resist solution spreads over the entire treated surface of the substrate W so as to cover the entire treated surface of the substrate W.
  • the film L1 of the resist solution is formed on the processing target surface of the substrate W.
  • the intermediate speed A1 ′ to the second at the second change rate. It is increased to the speed A2.
  • the rotational speed of the substrate W is increased from the first speed A1 to the second speed A2 at a constant rate of change (for example, the second rate of change).
  • the resist solution spreads stably. Specifically, in plan view, the resist solution stably spreads radially outward while maintaining a substantially circular shape. Therefore, unnecessary consumption of the resist solution can be suppressed.
  • the substrate W is rotated at a relatively high second speed A2, and the resist solution is discharged at a relatively high second rate r2.
  • the thickness of the film L1 is generally increased.
  • the discharge rate of the resist solution is high, the fluidity of the resist solution on the processing target surface of the substrate W is secured.
  • the resist solution is prevented from being accumulated on a partial region of the processing surface of the substrate W, and the uniformity of the thickness of the film L1 is enhanced.
  • the discharge of the resist solution is stopped.
  • the centrifugal force acting on the resist solution on the substrate W is reduced, and the resist solution is slightly accumulated near the central portion and the outer edge of the surface to be processed of the substrate W.
  • the outer edge portion and the central portion of the film L1 are slightly raised upward.
  • the thickness of the outer edge portion of the film L1 is preferably smaller than the thickness of the central portion of the film L1.
  • the substrate W is rotated at a relatively high fourth speed A4.
  • the overall thickness of the film L1 on the substrate W is finely adjusted in accordance with the fourth velocity A4. Specifically, the higher the fourth speed A4, the smaller the overall thickness of the film L1, and the lower the fourth speed A4, the greater the overall thickness of the film L1.
  • the cross-sectional shape of the film L1 does not change significantly, and is substantially maintained in the state of FIG. 3 (d).
  • the film L1 is solidified.
  • FIG. 4 is a diagram for explaining the change in the rotational speed of the substrate W and the change in the discharge rate of the resist solution in the comparative example of the film formation step.
  • the film forming step of FIG. 4 is different from the film forming step of FIG. 2 in that the discharge rate of the resist solution is adjusted to the second rate r2 in the first step, and the discharge rate of the resist solution in the second step. Is adjusted to the first rate r1.
  • the third and fourth steps are the same as in the example of FIG.
  • FIG. 5 is a diagram showing changes in the state of the resist solution on the substrate W in the comparative example.
  • the substrate W is rotated at a relatively low first speed A1, and the resist solution is discharged at a relatively high second rate r2.
  • a relatively large amount of resist solution is supplied to the central portion of the processing surface of the substrate W, while the centrifugal force acting on the resist solution on the substrate W is relatively small. Therefore, when the viscosity of the resist solution is high, as shown in FIG. 5A, the resist solution tends to be accumulated on the central portion of the surface to be processed of the substrate W.
  • the substrate W is rotated at a relatively high second speed A2, and the resist solution is discharged at a relatively low first rate r1.
  • the discharge rate of the resist solution is low, the flowability of the resist solution discharged onto the central portion of the processing target surface of the substrate W is low. Therefore, the resist solution hardly reaches the outer edge of the processed surface of the substrate W, and is accumulated on the peripheral portion of the processed surface of the substrate W. Therefore, as shown in FIG. 5C, the peripheral portion of the film L1 bulges upward. Also in the subsequent third and fourth steps, the state in which the central portion and the peripheral portion of the film L1 are largely raised upward is maintained.
  • the thickness of the central portion and the peripheral portion of the film L1 largely bulges upward. Therefore, the uniformity of the thickness of the film L1 is reduced.
  • the discharge rate of the resist solution is adjusted to be relatively low in the first step, the consumption of the resist solution is suppressed while the resist solution consumption is suppressed even when the viscosity of the resist solution is high
  • the resist solution can be appropriately spread radially outward on the surface to be treated.
  • the discharge rate of the resist solution is adjusted to be relatively high in the second step, the flowability of the resist solution on the surface to be processed of the substrate W is secured even when the viscosity of the resist solution is high. Thereby, the resist solution can be prevented from being accumulated on the peripheral portion of the surface to be processed of the substrate W, and the uniformity of the thickness of the film L1 can be enhanced.
  • FIG. 6 is a block diagram showing a functional configuration of the substrate processing apparatus 100.
  • the substrate processing apparatus 100 includes a holding control unit 51, a discharge control unit 53, a first discharge rate adjustment unit 54, a second discharge rate adjustment unit 55, a first rotation speed adjustment unit 56, A second rotation speed adjustment unit 57, a third rotation speed adjustment unit 58, a fourth rotation speed adjustment unit 59, a fifth rotation speed adjustment unit 60, and a time control unit 61 are included.
  • the functions of these components (51 to 61) are realized by the CPU of the control unit 40 executing a computer program stored in a storage medium such as a ROM or a storage device.
  • the holding control unit 51 controls the holding of the substrate W by the rotation holding unit 10.
  • the discharge control unit 53 controls the timing of the start and end of discharge of the resist solution from the resist nozzle 31 (FIG. 1) by controlling the opening and closing of the valve V1.
  • the first discharge rate adjustment unit 54 controls the pump 45 to adjust the discharge rate of the resist solution from the resist nozzle 31 to a first rate r1.
  • the second discharge rate adjustment unit 55 controls the pump 45 to adjust the discharge rate of the resist solution from the resist nozzle 31 to a second rate r2.
  • the first rotational speed adjustment unit 56 controls the motor 11 to adjust the rotational speed of the substrate W to a first speed A1.
  • the second rotation speed adjustment unit 57 controls the motor 11 to adjust the rotation speed of the substrate W to a second speed A2.
  • the third rotation speed adjustment unit 58 controls the motor 11 to adjust the rotation speed of the substrate W to a third speed A3.
  • the fourth rotational speed adjustment unit 59 adjusts the rotational speed of the substrate W to a fourth speed A4 by controlling the motor 11.
  • the fifth rotation speed adjustment unit 60 controls the motor 11 to adjust the rotation speed of the substrate W to a fifth speed A5.
  • the time control unit 61 includes a holding control unit 51, a discharge control unit 53, a first discharge rate adjustment unit 54, a second discharge rate adjustment unit 55, a first rotation speed adjustment unit 56, and a second rotation speed adjustment unit. 57.
  • the timing of the start and end of the operation of the third rotation speed adjustment unit 58, the fourth rotation speed adjustment unit 59, and the fifth rotation speed adjustment unit 60 is controlled.
  • FIG. 7 is a flowchart showing the operation of the substrate processing apparatus 100.
  • the times of the pre-wetting step, the washing step and the drying step of FIG. 2 are predetermined as the pre-wetting time, the washing time and the drying time.
  • the times of the first step, the second step, the third step and the fourth step of the film forming step of FIG. 2 are as low rate processing time, high rate processing time, low speed rotation time and high speed rotation time. It is determined in advance.
  • valves V1 to V4 of FIG. 1 are closed.
  • the holding control unit 51 controls the rotation holding unit 10, and the rotation holding unit 10 holds the substrate W (step S1).
  • the discharge control unit 53 opens the valve V2 to start the discharge of the solvent from the solvent nozzle 32 (step S2).
  • the discharge control unit 53 closes the valve V2.
  • the first rotation speed adjustment unit 56 controls the rotation holding unit 10 to start the rotation of the substrate W (step S3).
  • the first rotational speed adjustment unit 56 adjusts the rotational speed of the substrate W to the first speed A1.
  • the discharge control unit 53 starts discharging the resist solution from the resist nozzle 31 by opening the valve V1 (step S4).
  • the first discharge rate adjustment unit 54 selects the discharge rate of the resist solution Adjust to a rate r1 of 1.
  • the second rotation speed adjustment unit 57 increases the rotation speed of the substrate W to the second speed A2 (step S5), and The discharge rate adjustment unit 55 raises the discharge rate of the resist solution to the second rate r2 (step S6).
  • the third rotation speed adjustment unit 58 reduces the rotation speed of the substrate W to the third speed A3 (step S7).
  • the discharge control unit 53 stops the discharge of the resist solution from the resist nozzle 31 by closing the valve V2 (step S8).
  • the fourth rotation speed adjustment unit 59 increases the rotation speed of the substrate W to the fourth speed A4 (step S9).
  • the discharge control unit 53 opens the valves V3 and V4 to discharge the edge rinse liquid from the edge rinse nozzle 33 and back from the back rinse nozzle 34. Discharge of the rinse liquid is started (step S10).
  • the discharge control unit 53 stops the discharge of the edge rinse liquid and the discharge of the back rinse liquid by closing the valves V3 and V4.
  • the fifth rotation speed adjustment unit 60 increases the rotation speed of the substrate W to the speed A5 (step S11). Thereby, the edge rinse liquid and the back rinse liquid are shaken off from the substrate W.
  • the fifth rotation speed adjustment unit 60 stops the rotation of the substrate W (step S12).
  • the holding control unit 51 releases the holding of the substrate W by the rotation holding unit 10 (step S13). Thereafter, the substrate W is received from above the rotation holding unit 10, and the series of operations of the substrate processing apparatus 100 are completed.
  • the resist solution discharged to the central portion of one surface (surface to be processed) of the rotating substrate W is the substrate W
  • the discharge rate of the resist solution is adjusted to the first rate r1 so as to spread on one side.
  • a second discharge rate of the resist solution is higher than the first rate r1 so that the thickness of the resist solution spread over the entire surface of the rotating substrate W is increased. It is adjusted to rate r2.
  • the resist solution since the resist solution is discharged at a relatively low first rate r1 in the first step, the resist solution can be spread on one surface of the substrate W while suppressing the consumption of the resist solution.
  • the resist solution since the resist solution is discharged at a relatively high second rate r2 in the second step, the fluidity of the resist solution on one surface of the substrate W is secured even when the viscosity of the resist solution is high. Ru.
  • the resist solution is prevented from being accumulated in a partial region of one surface of the substrate W. Therefore, the uniformity of the thickness of the resist solution on one surface of the substrate W is enhanced. Therefore, the uniformity of the thickness of the film of the resist solution formed on the substrate W can be enhanced while suppressing the consumption of the resist solution.
  • the rotational speed of the substrate W is adjusted to the first speed A1 in the first step, and the rotational speed of the substrate W is higher than the first speed A1 in the second step. It is adjusted to speed A2.
  • the substrate W rotates at a relatively low speed in the first step, the resist solution can be stably spread on one surface of the substrate W.
  • the consumption of the resist solution can be further suppressed.
  • the centrifugal force acting on the resist solution is increased.
  • the resist solution can be appropriately spread to the outer edge of one surface of the substrate W, and the uniformity of the thickness of the resist solution can be further enhanced.
  • the discharge of the resist solution is stopped after the rotational speed of the substrate W is lowered to the third speed A3.
  • the formation of a drop mark is prevented and the resist solution on the substrate W is stable.
  • the rotational speed of the substrate W is adjusted to the fourth speed A4 higher than the third speed A3.
  • the thickness of the film of the resist solution on one surface of the substrate W can be appropriately adjusted in the fourth step.
  • the discharge rate of the resist solution is adjusted to the first rate r1 in the first step, and the discharge rate of the resist solution is the first in the second step.
  • the discharge rate of the resist solution may be adjusted in a plurality of steps including the first rate r1.
  • the discharge rate of the resist solution is adjusted to the second rate r2. It may be adjusted to multiple stages including the rate r2 of.
  • the discharge rate of the resist solution may be adjusted to be changed continuously.
  • the rotational speed of the substrate W is adjusted to the first speed A1 in the first step, and the rotational speed of the substrate W is adjusted to the second speed A2 in the second step.
  • the rotational speed of the substrate W may be adjusted in multiple steps including the first speed A1
  • the rotational speed of the substrate W is in multiple steps including the second speed A2. It may be adjusted.
  • the rotational speed of the substrate W may be adjusted so as to change continuously.
  • the timing at which the rotational speed of the substrate W is adjusted to the first speed A1 and the timing at which the discharge rate of the resist solution is adjusted to the first rate r1 are the same. These timings may be offset from each other.
  • the timing at which the rotational speed of the substrate W is adjusted to the second speed A2 and the timing at which the discharge rate of the resist solution is adjusted to the second rate r2 are the same. These timings may be offset from each other.
  • the discharge of the resist solution is stopped after the rotational speed of the substrate W is lowered from the second speed A2 to the third speed A3, but the substrate W has a second speed A2
  • the discharge of the resist solution may be stopped in the state of being rotated by the
  • a resist solution is used as the coating solution, but instead of the resist solution, another coating solution such as a lower layer film coating solution or an interlayer insulating film coating solution may be used.

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Abstract

A substrate processing apparatus includes a rotating and holding unit, a coating liquid discharge system, a first discharge rate adjustment unit, and a second discharge rate adjustment unit. The rotating and holding unit holds and rotates a substrate in a horizontal orientation. The coating liquid discharge system discharges a coating liquid to the central portion of one surface of the substrate that is rotated by the rotating and holding unit. The first discharge rate adjustment unit adjusts the discharge rate of the coating liquid from the coating liquid discharge system to the first rate, so that the coating liquid discharged from the coating liquid discharge system to the central portion of the one surface of the substrate spreads on the one surface of the substrate within the first period. The second discharge rate adjustment unit adjusts the discharge rate of the coating liquid from the coating liquid discharge system to the second rate, which is higher than the first rate, so that the thickness of the coating liquid which has spread over the entire one surface of the substrate increases during the second period after the first period.

Description

基板処理装置および基板処理方法Substrate processing apparatus and substrate processing method
　本発明は、基板上に塗布液の膜を形成する基板処理装置および基板処理方法に関する。 The present invention relates to a substrate processing apparatus and a substrate processing method for forming a film of a coating liquid on a substrate.
　半導体製造におけるリソグラフィー工程においては、露光処理により基板上にパターンを形成するために、基板処理装置によりレジスト液等の塗布液が基板に塗布される。 In a lithography process in semiconductor manufacturing, a coating solution such as a resist solution is applied to a substrate by a substrate processing apparatus in order to form a pattern on the substrate by exposure processing.
　特許文献１に記載された膜処理ユニットは、スピンチャック、溶剤吐出ノズルおよびレジスト液吐出ノズルを含む。スピンチャックにより基板が水平に保持され、溶剤吐出ノズルから基板上に溶剤が吐出された後、基板の回転が開始されるとともにレジスト液吐出ノズルから基板上にレジスト液が吐出される。次いで、基板が回転された状態で、レジスト液の吐出速度が第１の吐出速度よりも低い第２の吐出速度に低下される。その後、レジスト液の吐出および基板の回転が停止される。
特開２００１－２９７９６４号公報 The film processing unit described in Patent Document 1 includes a spin chuck, a solvent discharge nozzle, and a resist solution discharge nozzle. After the substrate is held horizontally by the spin chuck and the solvent is discharged onto the substrate from the solvent discharge nozzle, the rotation of the substrate is started and the resist solution is discharged onto the substrate from the resist solution discharge nozzle. Next, in a state where the substrate is rotated, the discharge speed of the resist solution is reduced to a second discharge speed lower than the first discharge speed. Thereafter, the discharge of the resist solution and the rotation of the substrate are stopped.
JP, 2001-297964, A
　近年、半導体回路の高集積化により、３次元構造を有するデバイスが開発されている。このようなデバイスを製造するために、従来よりも大きい膜厚の塗布膜が形成されるように高粘度の塗布液が基板に塗布される。塗布液の粘度が高い場合には、基板が回転されても、基板上で塗布液が拡がりにくい。そのため、基板上における塗布膜の均一性が低くなりやすい。多量の塗布液を用いた場合には、基板上における塗布膜の厚みの均一性を高めることが可能である。しかしながら、その場合には、基板処理のコストが高くなる。 In recent years, with the high integration of semiconductor circuits, devices having a three-dimensional structure have been developed. In order to produce such a device, a high viscosity coating solution is applied to the substrate so that a coating film having a larger thickness than the conventional one is formed. When the viscosity of the coating solution is high, the coating solution does not easily spread on the substrate even if the substrate is rotated. Therefore, the uniformity of the coating film on the substrate tends to be low. When a large amount of coating solution is used, it is possible to improve the uniformity of the thickness of the coating film on the substrate. However, in that case, the cost of substrate processing is high.
　本発明の目的は、塗布液の消費量を抑制しつつ基板上に形成される塗布液の膜の厚みの均一性を高めることが可能な基板処理装置および基板処理方法を提供することである。 An object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of enhancing the uniformity of the thickness of a film of a coating liquid formed on a substrate while suppressing the consumption of the coating liquid.
　（１）本発明の一局面に従う基板処理装置は、基板を水平姿勢で保持して回転させる回転保持部と、回転保持部により回転する基板の一面の中心部に塗布液を吐出する塗布液吐出系と、第１の期間に、塗布液吐出系から基板の一面の中心部に吐出された塗布液が基板の一面上で拡がるように、塗布液吐出系からの塗布液の吐出レートを第１のレートに調整する第１の吐出レート調整部と、第１の期間の後の第２の期間に、基板の一面の全体に拡がった塗布液の厚みが増加するように、塗布液吐出系からの塗布液の吐出レートを第１のレートよりも高い第２のレートに調整する第２の吐出レート調整部とを備える。 (1) A substrate processing apparatus according to one aspect of the present invention includes: a rotary holding unit that holds and rotates a substrate in a horizontal posture; and a coating liquid discharge that discharges a coating liquid to a central portion of one surface of the substrate rotated by the rotary holding unit. The rate of discharge of the coating liquid from the coating liquid discharge system is set so that the coating liquid discharged from the coating liquid discharge system to the central portion of the one surface of the substrate spreads over the one surface of the substrate during the first period. From the coating liquid discharge system so that the thickness of the coating liquid spread over the entire surface of the substrate during the second period after the first period and the first discharge rate adjusting unit that adjusts to the And a second discharge rate adjustment unit configured to adjust the discharge rate of the coating liquid to a second rate higher than the first rate.
　この基板処理装置においては、第１の期間に、回転する基板の一面の中心部に吐出された塗布液が基板の一面上で拡がるように、塗布液の吐出レートが第１のレートに調整される。第１の期間の後の第２の期間に、回転する基板の一面の全体に拡がった塗布液の厚みが増加するように、塗布液の吐出レートが第１のレートよりも高い第２のレートに調整される。 In this substrate processing apparatus, the discharge rate of the coating liquid is adjusted to the first rate so that the coating liquid discharged to the central portion of the one surface of the rotating substrate spreads over the one surface of the substrate during the first period. Ru. The second rate at which the discharge rate of the coating liquid is higher than the first rate so that the thickness of the coating liquid spread over the entire surface of the rotating substrate is increased in the second period after the first period. Adjusted to
　この場合、第１の期間に比較的低い第１のレートで塗布液が吐出されるため、塗布液の消費量を抑制しつつ基板の一面上で塗布液を拡げることができる。また、第２の期間に比較的高い第２のレートで塗布液が吐出されるため、塗布液の粘度が高い場合であっても、基板の一面上における塗布液の流動性が確保される。それにより、基板の一面の一部の領域に塗布液が蓄積されることが防止される。そのため、基板の一面上における塗布液の厚みの均一性が高まる。したがって、塗布液の消費量を抑制しつつ基板上に形成される塗布液の膜の厚みの均一性を高めることができる。 In this case, since the coating liquid is discharged at a relatively low first rate in the first period, the coating liquid can be spread over one surface of the substrate while suppressing the consumption of the coating liquid. In addition, since the coating liquid is discharged at a relatively high second rate during the second period, even when the viscosity of the coating liquid is high, the fluidity of the coating liquid on one surface of the substrate is secured. Thereby, the coating liquid is prevented from being accumulated in a partial region of one surface of the substrate. Therefore, the uniformity of the thickness of the coating liquid on one surface of the substrate is enhanced. Therefore, the uniformity of the thickness of the film of the coating liquid formed on the substrate can be enhanced while suppressing the consumption of the coating liquid.
　（２）基板処理装置は、第１の期間に、回転保持部による基板の回転速度を第１の速度に調整する第１の回転速度調整部と、第２の期間に、回転保持部による基板の回転速度を第１の速度よりも高い第２の速度に調整する第２の回転速度調整部とをさらに備えてもよい。 (2) The substrate processing apparatus includes a first rotation speed adjustment unit that adjusts the rotation speed of the substrate by the rotation holding unit to the first speed during the first period, and a substrate by the rotation holding unit during the second period. And a second rotation speed adjustment unit which adjusts the rotation speed of the second rotation speed to a second speed higher than the first speed.
　この場合、第１の期間に基板が比較的低い第１の速度で回転するため、基板の一面上で塗布液を安定的に拡げることができる。それにより、塗布液の消費量がさらに抑制される。また、第２の期間に基板が比較的高い第２の速度で回転するため、塗布液に働く遠心力が大きくなる。それにより、基板の一面の外縁まで塗布液を適切に拡げることができ、塗布液の厚みの均一性をより高めることができる。 In this case, since the substrate rotates at a relatively low first speed in the first period, the coating solution can be stably spread on one surface of the substrate. Thereby, the consumption of the coating liquid is further suppressed. In addition, since the substrate rotates at a relatively high second speed during the second period, the centrifugal force acting on the coating solution is increased. Thus, the coating liquid can be appropriately spread to the outer edge of one surface of the substrate, and the uniformity of the thickness of the coating liquid can be further enhanced.
　（３）本発明の他の局面に従う基板処理装置は、基板を水平姿勢で保持して回転させる回転保持部と、回転保持部により回転する基板の一面の中心部に塗布液を吐出する塗布液吐出系と、第１の期間に、塗布液吐出系からの塗布液の吐出レートを第１のレートに調整する第１の吐出レート調整部と、第１の期間の後の第２の期間に、塗布液吐出系からの塗布液の吐出レートを第１のレートよりも高い第２のレートに調整する第２の吐出レート調整部と、第１の期間に、回転保持部による基板の回転速度を第１の速度に調整する第１の回転速度調整部と、第２の期間に、回転保持部による基板の回転速度を第１の速度よりも高い第２の速度に調整する第２の回転速度調整部とを備える。 (3) A substrate processing apparatus according to another aspect of the present invention includes a rotation holding unit that holds and rotates a substrate in a horizontal posture, and a coating liquid that discharges a coating liquid to a central portion of one surface of the substrate rotated by the rotation holding unit. A discharge system, a first discharge rate adjustment unit that adjusts a discharge rate of the application liquid from the coating liquid discharge system to a first rate in a first period, and a second period after the first period And a second discharge rate adjustment unit that adjusts the discharge rate of the coating liquid from the coating liquid discharge system to a second rate higher than the first rate, and the rotational speed of the substrate by the rotation holding unit during the first period. And a second rotation adjusting the rotation speed of the substrate by the rotation holding unit to a second speed higher than the first speed during a second period. And a speed adjustment unit.
　この基板処理装置においては、第１の期間に、基板が第１の速度で回転しつつ基板の一面の中心部に第１のレートで塗布液が吐出される。第１の期間の後の第２の期間に、基板が第１の速度よりも高い第２の速度で回転しつつ基板の一面の中心部に第１のレートよりも高い第２のレートで塗布液が吐出される。 In this substrate processing apparatus, the coating liquid is discharged at a first rate to the central portion of one surface of the substrate while the substrate rotates at a first speed in a first period. During the second period after the first period, the substrate is rotated at a second speed higher than the first speed and applied to the center of one surface of the substrate at a second rate higher than the first rate The liquid is discharged.
　この場合、第１の期間に塗布液の消費量を抑制しつつ基板の一面上で塗布液を安定的に拡げることができる。第２の期間には、塗布液の粘度が高い場合であっても、基板の一面上における塗布液の流動性が確保される。それにより、基板の一面の一部の領域に塗布液が蓄積されることが防止される。そのため、基板の一面上における塗布液の厚みの均一性が高まる。したがって、塗布液の消費量を抑制しつつ基板上に形成される塗布液の膜の厚みの均一性を高めることができる。 In this case, it is possible to stably spread the coating liquid on one surface of the substrate while suppressing the consumption of the coating liquid in the first period. In the second period, even when the viscosity of the coating liquid is high, the fluidity of the coating liquid on one surface of the substrate is secured. Thereby, the coating liquid is prevented from being accumulated in a partial region of one surface of the substrate. Therefore, the uniformity of the thickness of the coating liquid on one surface of the substrate is enhanced. Therefore, the uniformity of the thickness of the film of the coating liquid formed on the substrate can be enhanced while suppressing the consumption of the coating liquid.
　（４）基板処理装置は、第２の期間の後の第３の期間に、回転保持部による基板の回転速度を第１の速度よりも高くかつ第２の速度よりも低い第３の速度に調整する第３の回転速度調整部と、第３の期間に塗布液の吐出を停止させる吐出停止部とをさらに備えてもよい。 (4) In the third period after the second period, the substrate processing apparatus sets the rotation speed of the substrate by the rotation holding unit to a third speed higher than the first speed and lower than the second speed. It may further include a third rotation speed adjustment unit to be adjusted, and a discharge stop unit to stop the discharge of the application liquid in the third period.
　この場合、基板の回転速度が第２の速度から第３の速度に下降された後に塗布液の吐出が停止されるので、塗布液の吐出が停止される際に塗布液の滴が基板の一面上の塗布液の表面に落下しても、基板の一面上で塗布液が安定的に保持される。それにより、塗布液の膜の厚みの均一性をより高めることができる。 In this case, since the discharge of the coating liquid is stopped after the rotational speed of the substrate is lowered from the second speed to the third speed, the droplets of the coating liquid are one side of the substrate when the discharge of the coating liquid is stopped. Even when dropped onto the surface of the upper coating solution, the coating solution is stably held on one surface of the substrate. Thereby, the uniformity of the film thickness of the coating solution can be further improved.
　（５）基板処理装置は、第３の期間の後の第４の期間に、回転保持部による基板の回転速度を第３の速度よりも高くかつ第２の速度よりも低い第４の速度に調整する第４の回転速度調整部をさらに備えてもよい。 (5) In the fourth period after the third period, the substrate processing apparatus sets the rotational speed of the substrate by the rotation holding unit to a fourth speed higher than the third speed and lower than the second speed. You may further provide the 4th rotational speed adjustment part to adjust.
　この場合、第４の期間に基板の一面上の塗布液の膜の厚みを適切に調整することができる。 In this case, the thickness of the film of the coating liquid on one surface of the substrate can be appropriately adjusted in the fourth period.
　（６）本発明のさらに他の局面に従う基板処理方法は、第１の期間に、基板の一面上で塗布液が拡がるように、回転保持部により基板を回転させつつ塗布液吐出系により基板の一面の中心部に第１のレートで塗布液を吐出するステップと、第１の期間の後の第２の期間に、基板の一面の全体に広がった塗布液の厚みが増加されるように、回転保持部により基板を回転させつつ塗布液吐出系により基板の一面の中心部に第１のレートよりも高い第２のレートで塗布液を吐出するステップとを含む。 (6) In the substrate processing method according to the further aspect of the present invention, the coating liquid discharge system rotates the substrate by the rotation holding unit so that the coating liquid spreads on one surface of the substrate during the first period. Ejecting the coating solution at a first rate to the center of one surface and the thickness of the coating solution spread over the entire surface of the substrate during the second period after the first period, Discharging the coating liquid at a second rate higher than the first rate to the central portion of one surface of the substrate while rotating the substrate by the rotation holding unit.
　この基板処理方法によれば、第１の期間に、塗布液が基板の一面上で拡がるように、回転する基板の一面の中心部に塗布液が第１のレートで吐出される。第１の期間の後の第２の期間に、基板の一面の全体に拡がった塗布液の厚みが増加するように、回転する基板の一面の中心部に塗布液が吐出レートが第１のレートよりも高い第２のレートで吐出される。 According to this substrate processing method, during the first period, the coating liquid is discharged at a first rate to the central portion of the one surface of the rotating substrate so that the coating liquid spreads on the one surface of the substrate. In the second period after the first period, the discharge rate of the coating solution is the first at the center of the one surface of the rotating substrate so that the thickness of the coating solution spread over the entire surface of the substrate increases. Ejected at a higher second rate.
　この場合、第１の期間に比較的低い第１のレートで塗布液が吐出されるため、塗布液の消費量を抑制しつつ基板の一面上で塗布液を拡げることができる。また、第２の期間に比較的高い第２のレートで塗布液が吐出されるため、塗布液の粘度が高い場合であっても、基板の一面上における塗布液の流動性が確保される。それにより、基板の一面の一部の領域に塗布液が蓄積されることが防止される。そのため、基板の一面上における塗布液の厚みの均一性が高まる。したがって、塗布液の消費量を抑制しつつ基板上に形成される塗布液の膜の厚みの均一性を高めることができる。 In this case, since the coating liquid is discharged at a relatively low first rate in the first period, the coating liquid can be spread over one surface of the substrate while suppressing the consumption of the coating liquid. In addition, since the coating liquid is discharged at a relatively high second rate during the second period, even when the viscosity of the coating liquid is high, the fluidity of the coating liquid on one surface of the substrate is secured. Thereby, the coating liquid is prevented from being accumulated in a partial region of one surface of the substrate. Therefore, the uniformity of the thickness of the coating liquid on one surface of the substrate is enhanced. Therefore, the uniformity of the thickness of the film of the coating liquid formed on the substrate can be enhanced while suppressing the consumption of the coating liquid.
　（７）基板処理方法は、第１の期間に、回転保持部による基板の回転速度を第１の速度に調整するステップと、第２の期間に、回転保持部による基板の回転速度を第１の速度よりも高い第２の速度に調整するステップとをさらに含んでもよい。 (7) In the substrate processing method, the rotational speed of the substrate by the rotational holding unit is adjusted to the first speed in the first period, and the rotational speed of the substrate by the rotational holding unit is the first in the second period. Adjusting to a second speed higher than the speed of.
　（８）本発明のさらに他の局面に従う基板処理方法は、第１の期間に、回転保持部により基板を第１の速度で回転させつつ塗布液吐出系により基板の一面の中心部に第１のレートで塗布液を吐出するステップと、第１の期間の後の第２の期間に、回転保持部により基板を第１の速度よりも高い第２の速度で回転させつつ塗布液吐出系により基板の一面の中心部に第１のレートよりも高い第２のレートで塗布液を吐出するステップとを含んでもよい。 (8) In the substrate processing method according to still another aspect of the present invention, during the first period, while the substrate is rotated at the first speed by the rotation holding unit, the central portion of one surface of the substrate is And a second period after the first period, the substrate is rotated at a second speed higher than the first speed by the rotation holding unit, and the coating liquid discharge system is performed. And E. dispensing the coating solution at a second rate higher than the first rate on a central portion of one surface of the substrate.
　この基板処理装置においては、第１の期間に、基板が第１の速度で回転しつつ基板の一面の中心部に第１のレートで塗布液が吐出される。第１の期間の後の第２の期間に、基板が第１の速度よりも高い第２の速度で回転しつつ基板の一面の中心部に第１のレートよりも高い第２のレートで塗布液が吐出される。 In this substrate processing apparatus, the coating liquid is discharged at a first rate to the central portion of one surface of the substrate while the substrate rotates at a first speed in a first period. During the second period after the first period, the substrate is rotated at a second speed higher than the first speed and applied to the center of one surface of the substrate at a second rate higher than the first rate The liquid is discharged.
　この場合、第１の期間に塗布液の消費量を抑制しつつ基板の一面上で塗布液を安定的に拡げることができる。第２の期間には、塗布液の粘度が高い場合であっても、基板の一面上における塗布液の流動性が確保される。それにより、基板の一面の一部の領域に塗布液が蓄積されることが防止される。そのため、基板の一面上における塗布液の厚みの均一性が高まる。したがって、塗布液の消費量を抑制しつつ基板上に形成される塗布液の膜の厚みの均一性を高めることができる。 In this case, it is possible to stably spread the coating liquid on one surface of the substrate while suppressing the consumption of the coating liquid in the first period. In the second period, even when the viscosity of the coating liquid is high, the fluidity of the coating liquid on one surface of the substrate is secured. Thereby, the coating liquid is prevented from being accumulated in a partial region of one surface of the substrate. Therefore, the uniformity of the thickness of the coating liquid on one surface of the substrate is enhanced. Therefore, the uniformity of the thickness of the film of the coating liquid formed on the substrate can be enhanced while suppressing the consumption of the coating liquid.
　（９）基板処理方法は、第２の期間の後の第３の期間に、回転保持部による基板の回転速度を第１の速度よりも高くかつ第２の速度よりも低い第３の速度に調整するステップと、第３の期間に塗布液の吐出を停止させるステップとをさらに含んでもよい。 (9) In the substrate processing method, in the third period after the second period, the rotational speed of the substrate by the rotation holding unit is set to a third speed higher than the first speed and lower than the second speed. The method may further include the steps of adjusting and stopping the discharge of the application liquid in a third period.
　（１０）基板処理方法は、第３の期間の後の第４の期間に、回転保持部による基板の回転速度を第３の速度よりも高くかつ第２の速度よりも低い第４の速度に調整するステップをさらに含んでもよい。 (10) In the substrate processing method, in the fourth period after the third period, the rotational speed of the substrate by the rotation holding unit is set to a fourth speed higher than the third speed and lower than the second speed. It may further include the step of adjusting.
　本発明によれば、塗布液の消費量を抑制しつつ基板上に形成される塗布液の膜の厚みの均一性を高めることができる。 According to the present invention, it is possible to enhance the uniformity of the thickness of the film of the coating liquid formed on the substrate while suppressing the consumption of the coating liquid.
図１は本発明の一実施の形態に係る基板処理装置の概略断面図である。FIG. 1 is a schematic cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention. 図２は基板処理装置における基板の回転速度の変化、ならびに溶剤およびレジスト液の吐出レートの変化を示す図である。FIG. 2 is a view showing the change in the rotational speed of the substrate in the substrate processing apparatus and the change in the discharge rate of the solvent and the resist solution. 図３は膜形成工程における基板上のレジスト液の状態の変化を示す図である。FIG. 3 is a view showing a change in the state of the resist solution on the substrate in the film forming step. 図４は比較例における基板の回転速度の変化およびレジスト液の吐出レートの変化について説明するための図である。FIG. 4 is a diagram for explaining the change in the rotational speed of the substrate and the change in the discharge rate of the resist solution in the comparative example. 図５は比較例における基板上のレジスト液の状態の変化を示す図である。FIG. 5 is a diagram showing changes in the state of the resist solution on the substrate in the comparative example. 図６は基板処理装置の機能的な構成を示すブロック図である。FIG. 6 is a block diagram showing a functional configuration of the substrate processing apparatus. 図７は基板処理装置の動作を示すフローチャートである。FIG. 7 is a flowchart showing the operation of the substrate processing apparatus.
　以下、本発明の一実施の形態に係る基板処理装置および基板処理方法について、図面を参照しながら説明する。なお、本実施の形態においては、塗布液としてレジスト液が用いられる。 Hereinafter, a substrate processing apparatus and a substrate processing method according to an embodiment of the present invention will be described with reference to the drawings. In the present embodiment, a resist solution is used as a coating solution.
　［１］基板処理装置
　図１は、本発明の一実施の形態に係る基板処理装置の概略断面図である。図１において、基板処理装置１００は回転式基板処理装置であり、回転保持部１０、飛散防止用のカップ２０、ノズルユニット３０および制御部４０を備える。回転保持部１０は、モータ１１の回転軸１２の先端に取り付けられ、基板Ｗを水平姿勢で保持した状態で鉛直軸の周りで回転駆動される。なお、本実施の形態においては、基板Ｗの直径は例えば３００ｍｍである。 [1] Substrate Processing Apparatus FIG. 1 is a schematic cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention. In FIG. 1, a substrate processing apparatus 100 is a rotary substrate processing apparatus, and includes a rotation holding unit 10, a shatterproof cup 20, a nozzle unit 30, and a control unit 40. The rotation holding unit 10 is attached to the tip of the rotation shaft 12 of the motor 11, and is rotationally driven around the vertical axis in a state where the substrate W is held in the horizontal posture. In the present embodiment, the diameter of the substrate W is, for example, 300 mm.
　カップ２０は、回転保持部１０に保持された基板Ｗの周囲を取り囲むように設けられる。カップ２０の上面側には開口部２１が形成され、カップ２０の下部には廃液口２２および複数の排気口２３が形成される。排気口２３は、工場内の排気設備に接続される。回転保持部１０の下方には、整流板２４が配置される。この整流板２４は、外周部に向かって斜め下方に傾斜する傾斜面を有する。 The cup 20 is provided to surround the periphery of the substrate W held by the rotary holding unit 10. An opening 21 is formed on the upper surface side of the cup 20, and a waste liquid port 22 and a plurality of exhaust ports 23 are formed in the lower part of the cup 20. The exhaust port 23 is connected to an exhaust system in the factory. Below the rotation holding unit 10, a straightening vane 24 is disposed. The baffle plate 24 has an inclined surface that inclines obliquely downward toward the outer peripheral portion.
　ノズルユニット３０は、レジストノズル３１、溶剤ノズル３２、エッジリンスノズル３３およびバックリンスノズル３４を含む。レジストノズル３１、溶剤ノズル３２およびエッジリンスノズル３３は、上下動可能かつ基板Ｗの上方位置とカップ２０外の待機位置との間で移動可能に設けられる。バックリンスノズル３４は、基板Ｗの下方に設けられる。図１の例では、ノズルユニット３０は２個のバックリンスノズル３４を含む。 The nozzle unit 30 includes a resist nozzle 31, a solvent nozzle 32, an edge rinse nozzle 33 and a back rinse nozzle 34. The resist nozzle 31, the solvent nozzle 32 and the edge rinse nozzle 33 are vertically movable and movable between the upper position of the substrate W and the standby position outside the cup 20. The back rinse nozzle 34 is provided below the substrate W. In the example of FIG. 1, the nozzle unit 30 includes two back rinse nozzles 34.
　基板処理時には、レジストノズル３１および溶剤ノズル３２は、基板Ｗの被処理面における略中心部の上方に位置する。エッジリンスノズル３３は、基板Ｗの被処理面における周縁部の上方に位置する。 At the time of substrate processing, the resist nozzle 31 and the solvent nozzle 32 are located above the substantially central portion of the processing surface of the substrate W. The edge rinse nozzle 33 is located above the peripheral edge of the processing surface of the substrate W.
　レジストノズル３１は、レジスト液供給管Ｔ１を介してレジスト液供給源Ｐ１と接続される。レジスト液供給源Ｐ１には、レジスト液が貯留される。本実施の形態において、レジスト液の粘度は、例えば２０ｃＰ以上５００ｃＰ未満であり、１００ｃＰ以上２００ｃＰ未満であることが好ましい。レジスト液供給管Ｔ１には、バルブＶ１およびポンプ４５が介挿される。レジストノズル３１、レジスト液供給管Ｔ１、バルブＶ１およびポンプ４５によりレジスト液吐出系３１Ａが構成される。バルブＶ１が開放されることにより、レジスト液供給源Ｐ１からレジスト液供給管Ｔ１を通してレジストノズル３１にレジスト液が供給される。これにより、レジストノズル３１から基板Ｗの被処理面にレジスト液が吐出される。また、ポンプ４５により、レジストノズル３１からのレジスト液の吐出レートが調整される。吐出レートとは単位時間当たりの吐出量を表す。 The resist nozzle 31 is connected to a resist solution supply source P1 via a resist solution supply pipe T1. The resist solution is stored in the resist solution supply source P1. In the present embodiment, the viscosity of the resist solution is, for example, 20 cP or more and less than 500 cP, and preferably 100 cP or more and less than 200 cP. A valve V1 and a pump 45 are interposed in the resist solution supply pipe T1. The resist nozzle 31, the resist solution supply pipe T1, the valve V1, and the pump 45 constitute a resist solution discharge system 31A. By opening the valve V1, the resist solution is supplied from the resist solution supply source P1 to the resist nozzle 31 through the resist solution supply pipe T1. Thereby, the resist solution is discharged from the resist nozzle 31 to the surface to be processed of the substrate W. Further, the discharge rate of the resist solution from the resist nozzle 31 is adjusted by the pump 45. The discharge rate represents the discharge amount per unit time.
　溶剤ノズル３２は、溶剤供給管Ｔ２を介して溶剤供給源Ｐ２と接続される。溶剤供給源Ｐ２には、溶剤が貯留される。溶剤は、例えばＰＧＭＥＡ（propyleneglycol monomethylether acetate：プロピレングリコールモノメチルエーテルアセテート）、ＰＧＭＥ（propyleneglycol monomethyl ether：プロピレングリコールモノメチルエーテル）またはシクロヘキサノン（cyclohexanone）を含む。溶剤供給管Ｔ２には、バルブＶ２が介挿される。バルブＶ２が開放されることにより、溶剤供給源Ｐ２から溶剤供給管Ｔ２を通して溶剤ノズル３２に溶剤が供給される。これにより、溶剤ノズル３２から基板Ｗの被処理面に溶剤が吐出される。 The solvent nozzle 32 is connected to a solvent supply source P2 via a solvent supply pipe T2. A solvent is stored in the solvent supply source P2. The solvent includes, for example, PGMEA (propylene glycol monomethyl ether acetate: propylene glycol monomethyl ether acetate), PGME (propylene glycol monomethyl ether: propylene glycol monomethyl ether) or cyclohexanone. A valve V2 is inserted in the solvent supply pipe T2. By opening the valve V2, the solvent is supplied from the solvent supply source P2 to the solvent nozzle 32 through the solvent supply pipe T2. Thus, the solvent is discharged from the solvent nozzle 32 to the surface to be processed of the substrate W.
　エッジリンスノズル３３は、エッジリンス液供給管Ｔ３を介してエッジリンス液供給源Ｐ３と接続される。エッジリンス液供給源Ｐ３には、溶剤供給源Ｐ２に貯留された溶剤と同様の溶剤からなるリンス液（以下、エッジリンス液と呼ぶ。）が貯留される。エッジリンス液供給管Ｔ３には、バルブＶ３が介挿される。バルブＶ３が開放されることにより、エッジリンス液供給源Ｐ３からエッジリンス液供給管Ｔ３を通してエッジリンスノズル３３にエッジリンス液が供給される。これにより、エッジリンスノズル３３から基板Ｗの被処理面の周縁部にレジスト液の膜を除去するためのエッジリンス液が吐出される。 The edge rinse nozzle 33 is connected to an edge rinse solution supply source P3 via an edge rinse solution supply pipe T3. The edge rinse liquid supply source P3 stores a rinse liquid (hereinafter referred to as an edge rinse liquid) composed of the same solvent as the solvent stored in the solvent supply source P2. A valve V3 is interposed in the edge rinse liquid supply pipe T3. By opening the valve V3, the edge rinse liquid is supplied from the edge rinse liquid supply source P3 to the edge rinse nozzle 33 through the edge rinse liquid supply pipe T3. Thereby, an edge rinse liquid for removing the film of the resist liquid is discharged from the edge rinse nozzle 33 to the peripheral portion of the processing surface of the substrate W.
　バックリンスノズル３４は、バックリンス液供給管Ｔ４を介してバックリンス液供給源Ｐ４と接続されている。バックリンス液供給源Ｐ４には、溶剤供給源Ｐ２に貯留された溶剤と同様の溶剤からなるリンス液（以下、バックリンス液と呼ぶ。）が貯留される。バックリンス液供給管Ｔ４にはバルブＶ４が介挿される。バルブＶ４が開放されることにより、バックリンス液供給源Ｐ４からバックリンス液供給管Ｔ４を通してバックリンスノズル３４にバックリンス液が供給される。これにより、バックリンスノズル３４から基板Ｗの裏面（被処理面と反対側の面）を洗浄するためのバックリンス液が吐出される。 The back rinse nozzle 34 is connected to a back rinse solution supply source P4 via a back rinse solution supply pipe T4. The back rinse liquid supply source P4 stores a rinse liquid (hereinafter referred to as a back rinse liquid) composed of the same solvent as the solvent stored in the solvent supply source P2. A valve V4 is inserted in the back rinse liquid supply pipe T4. By opening the valve V4, the back rinse liquid is supplied from the back rinse liquid supply source P4 to the back rinse nozzle 34 through the back rinse liquid supply pipe T4. Thereby, the back rinse liquid for washing the back surface (surface opposite to a processed surface) of the substrate W is discharged from the back rinse nozzle 34.
　レジストノズル３１はレジスト液の吐出口が下方を向くように直立した状態で設けられ、溶剤ノズル３２は溶剤の吐出口が下方を向くように直立した状態で設けられる。エッジリンスノズル３３はエッジリンス液の吐出口が斜め下外方を向くように傾斜した状態で設けられる。バックリンスノズル３４はバックリンス液の吐出口が上方を向くように直立した状態で設けられる。 The resist nozzle 31 is provided upright with the discharge port of the resist solution facing downward, and the solvent nozzle 32 is provided upright with the discharge port of solvent facing downward. The edge rinse nozzle 33 is provided in an inclined state such that the discharge port of the edge rinse liquid is directed obliquely downward and outward. The back rinse nozzle 34 is provided in an upright state so that the discharge port of the back rinse liquid is directed upward.
　制御部４０は、ＣＰＵ（中央演算処理装置）、ＲＯＭ（リードオンリメモリ）、ＲＡＭ（ランダムアクセスメモリ）および記憶装置等を含む。制御部４０は、モータ１１の回転速度を制御することにより、回転保持部１０により保持された基板Ｗの回転速度を制御する。また、制御部４０は、バルブＶ１～Ｖ４を制御することにより、レジスト液、溶剤、エッジリンス液およびバックリンス液の吐出タイミングを制御する。また、制御部４０は、ポンプ４５を制御することにより、レジスト液の吐出レートを制御する。 The control unit 40 includes a CPU (central processing unit), a ROM (read only memory), a RAM (random access memory), a storage device, and the like. The control unit 40 controls the rotation speed of the substrate W held by the rotation holding unit 10 by controlling the rotation speed of the motor 11. Further, the control unit 40 controls discharge timings of the resist solution, the solvent, the edge rinse solution, and the back rinse solution by controlling the valves V1 to V4. Further, the control unit 40 controls the discharge rate of the resist solution by controlling the pump 45.
　［２］基板処理
　図１の基板処理装置１００における基板Ｗの処理工程について説明する。図２は、基板処理装置１００における基板Ｗの回転速度の変化、ならびに溶剤およびレジスト液の吐出レートの変化を示す図である。図２において、横軸は時間を表し、縦軸は、基板Ｗの回転速度、ならびに溶剤およびレジスト液の吐出レートを表す。 [2] Substrate Processing The processing steps of the substrate W in the substrate processing apparatus 100 of FIG. 1 will be described. FIG. 2 is a view showing the change in the rotational speed of the substrate W in the substrate processing apparatus 100 and the change in the discharge rate of the solvent and the resist solution. In FIG. 2, the horizontal axis represents time, and the vertical axis represents the rotation speed of the substrate W, and the discharge rate of the solvent and the resist solution.
　図２に示すように、基板Ｗの処理工程は、プリウエット工程、膜形成工程、洗浄工程および乾燥工程を含む。プリウエット工程においては、基板Ｗの被処理面が溶剤で湿潤される。膜形成工程においては、基板Ｗの被処理面上にレジスト液が塗布される。洗浄工程においては、基板Ｗの被処理面の周縁部および裏面の洗浄が行われる。乾燥工程においては、基板Ｗの乾燥が行われる。 As shown in FIG. 2, the processing step of the substrate W includes a pre-wet step, a film forming step, a cleaning step and a drying step. In the pre-wet process, the surface to be processed of the substrate W is wetted with a solvent. In the film formation step, a resist solution is applied onto the processing target surface of the substrate W. In the cleaning step, the peripheral portion and the back surface of the surface to be processed of the substrate W are cleaned. In the drying step, the substrate W is dried.
　基板Ｗは、被処理面が上方に向けられた状態で回転保持部１０により保持される（図１参照）。初期状態では、基板Ｗの回転が停止されるとともに、レジスト液、溶剤、エッジリンス液およびバックリンス液の吐出が停止される。 The substrate W is held by the rotation holding unit 10 in a state in which the processing surface is directed upward (see FIG. 1). In the initial state, the rotation of the substrate W is stopped, and the discharge of the resist solution, the solvent, the edge rinse solution, and the back rinse solution is stopped.
　プリウエット工程は、時点ｔ１から時点ｔ２までの期間に行われる。図１の溶剤ノズル３２が基板Ｗの中心部上方に移動された後、時点ｔ１で溶剤ノズル３２からの溶剤の吐出が開始される。溶剤は、基板Ｗの被処理面の中心部に吐出される。本例では、溶剤が一定の吐出レートｒ０で吐出される。時点ｔ２で溶剤の吐出が停止される。基板Ｗの被処理面上に溶剤が供給されることにより、後の膜形成工程において、レジスト液が基板Ｗの被処理面上で拡がりやすくなる。 The pre-wet process is performed in the period from time t1 to time t2. After the solvent nozzle 32 of FIG. 1 is moved to above the center of the substrate W, discharge of the solvent from the solvent nozzle 32 is started at time t1. The solvent is discharged to the central portion of the processing surface of the substrate W. In this example, the solvent is discharged at a constant discharge rate r0. The discharge of the solvent is stopped at time t2. By supplying the solvent onto the surface to be processed of the substrate W, the resist solution is likely to spread on the surface to be processed of the substrate W in the subsequent film forming step.
　膜形成工程は、第１の工程、第２の工程、第３の工程および第４の工程を含む。図２の例では、時点ｔ３から時点ｔ４までの期間に第１の工程が行われ、時点ｔ４から時点ｔ５までの期間に第２の工程が行われ、時点ｔ５から時点ｔ６までの期間に第３の工程が行われ、時点ｔ６から時点ｔ７までの期間に第４の工程が行われる。時点ｔ３から時点ｔ４までの期間が第１の期間の例であり、時点ｔ４から時点ｔ５までの期間が第２の期間の例であり、時点ｔ５から時点ｔ６までの期間が第３の期間の例であり、時点ｔ６から時点ｔ７までの期間が第４の期間の例である。 The film forming step includes a first step, a second step, a third step and a fourth step. In the example of FIG. 2, the first step is performed in the period from time t3 to time t4, the second step is performed in the period from time t4 to time t5, and the first step is performed in the period from time t5 to time t6. The third process is performed, and the fourth process is performed in the period from time t6 to time t7. A period from time t3 to time t4 is an example of a first period, a period from time t4 to time t5 is an example of a second period, and a period from time t5 to time t6 is a third period. This is an example, and the period from time t6 to time t7 is an example of the fourth period.
　図１のレジストノズル３１が基板Ｗの中心部上方に移動された後、時点ｔ３において、基板Ｗの回転が開始されるとともにレジストノズル３１からのレジスト液の吐出が開始される。レジスト液は、基板Ｗの被処理面の中心部に吐出される。第１の工程では、基板Ｗの被処理面の中心部に吐出されたレジスト液が基板Ｗの一面上で拡がるように、基板Ｗの回転速度が第１の速度Ａ１に調整され、レジスト液の吐出レートが第１のレートｒ１に調整される。第１の速度Ａ１は、例えば０ｒｐｍより大きく５００ｒｐｍ未満であり、第１のレートｒ１は、例えば０．２ｍｌ／ｓ以上２ｍｌ／ｓ未満である。なお、第１の工程において、基板Ｗの回転が停止された状態で基板Ｗの被処理面にレジスト液が吐出されてもよい。 After the resist nozzle 31 of FIG. 1 is moved to above the center of the substrate W, the rotation of the substrate W is started and discharge of the resist solution from the resist nozzle 31 is started at time t3. The resist solution is discharged to the central portion of the processing surface of the substrate W. In the first step, the rotational speed of the substrate W is adjusted to a first speed A1 so that the resist solution discharged to the central portion of the processed surface of the substrate W spreads on one surface of the substrate W, and the resist solution The discharge rate is adjusted to the first rate r1. The first speed A1 is, for example, greater than 0 rpm and less than 500 rpm, and the first rate r1 is, for example, not less than 0.2 ml / s and less than 2 ml / s. In the first step, the resist solution may be discharged onto the surface to be processed of the substrate W while the rotation of the substrate W is stopped.
　第２の工程では、基板Ｗの被処理面の全体に拡がったレジスト液の厚みが増加するように、基板Ｗの回転速度が第２の速度Ａ２に調整され、レジスト液の吐出レートが第２のレートｒ２に調整される。本例では、時点ｔ３ａから時点ｔ４までの期間に基板Ｗの回転速度が第１の変化率で第１の速度Ａ１から中間速度Ａ１’まで上昇された後、時点ｔ４から基板Ｗの回転速度が第２の変化率で中間速度１’から第２の速度Ａまで上昇される。第２の変化率は第１の変化率よりも高い。 In the second step, the rotational speed of the substrate W is adjusted to the second speed A2 so that the thickness of the resist solution spread over the entire processing surface of the substrate W is increased, and the discharge rate of the resist solution is the second Is adjusted to rate r2. In this example, after the rotational speed of the substrate W is increased from the first speed A1 to the intermediate speed A1 'at a first change rate in the period from time t3a to time t4, the rotational speed of the substrate W is timed from time t4. From the intermediate speed 1 'to the second speed A at a second rate of change. The second rate of change is higher than the first rate of change.
　中間速度Ａ１’は、第１の速度Ａ１よりも高く、第２の速度Ａ２よりも低い。中間速度Ａ１’は、例えば１００ｒｐｍ以上１０００ｒｐｍ未満である。第２の速度Ａ２は、第１の速度Ａ１よりも高く、例えば５００ｒｐｍ以上４０００ｒｐｍ未満である。第２のレートｒ２は、第１のレートｒ１よりも高く、例えば０．３ｍｌ／ｓ以上３ｍｌ／ｓ未満である。 The intermediate speed A1 'is higher than the first speed A1 and lower than the second speed A2. Intermediate speed A1 'is 100 rpm or more and less than 1000 rpm, for example. The second speed A2 is higher than the first speed A1, for example, 500 rpm or more and less than 4000 rpm. The second rate r2 is higher than the first rate r1, for example, not less than 0.3 ml / s and less than 3 ml / s.
　時点ｔ５で基板Ｗの回転速度が下降され、時点ｔ６ａでレジスト液の吐出が停止される。第３の工程では、基板Ｗの回転速度が第３の速度Ａ３に調整される。第３の速度Ａ３は、例えば、第１の速度Ａ１よりも高くかつ第２の速度Ａ２よりも低い。第３の速度Ａ３は、例えば０ｒｐｍより大きく１０００ｒｐｍ未満である。なお、第３の工程において、基板Ｗの回転が停止されてもよい。 The rotational speed of the substrate W is decreased at time t5, and the discharge of the resist solution is stopped at time t6a. In the third step, the rotational speed of the substrate W is adjusted to a third speed A3. The third speed A3 is, for example, higher than the first speed A1 and lower than the second speed A2. The third speed A3 is, for example, greater than 0 rpm and less than 1000 rpm. In the third step, the rotation of the substrate W may be stopped.
　時点ｔ６において、基板Ｗの回転速度が上昇される。第４の工程では、基板Ｗの回転速度が第４の速度Ａ４に調整される。第４の速度Ａ４は、例えば第３の速度Ａ３よりも高くかつ第２の速度Ａ２よりも低い。第４の速度Ａ４は、例えば１０００ｒｐｍ以上２０００ｒｐｍ未満である。 At time t6, the rotational speed of the substrate W is increased. In the fourth step, the rotational speed of the substrate W is adjusted to a fourth speed A4. The fourth speed A4 is, for example, higher than the third speed A3 and lower than the second speed A2. The fourth speed A4 is, for example, not less than 1000 rpm and less than 2000 rpm.
　第１の工程、第２の工程、第３の工程および第４の工程において、基板Ｗの被処理面上にレジスト液の膜が形成される。膜形成工程の詳細については後述する。 In the first step, the second step, the third step, and the fourth step, a film of a resist solution is formed on the surface to be processed of the substrate W. Details of the film formation process will be described later.
　洗浄工程は、時点ｔ７から時点ｔ８の期間に行われる。図１のエッジリンスノズル３３が基板Ｗの周縁部の上方に移動した後、エッジリンスノズル３３からのエッジリンス液の吐出が開始されるとともに、図１のバックリンスノズル３４からのバックリンス液の吐出が開始される。エッジリンス液は、基板Ｗの被処理面の周縁部に吐出され、バックリンス液は、基板Ｗの裏面に吐出される。これにより、基板Ｗの被処理面の周縁部がエッジリンス液により洗浄されるとともに、基板Ｗの裏面がバックリンス液により洗浄される。 The cleaning process is performed in the period from time t7 to time t8. After the edge rinse nozzle 33 of FIG. 1 moves to the upper side of the peripheral portion of the substrate W, discharge of the edge rinse solution from the edge rinse nozzle 33 is started, and the back rinse solution of FIG. Dispensing is started. The edge rinse liquid is discharged to the peripheral portion of the processing surface of the substrate W, and the back rinse liquid is discharged to the back surface of the substrate W. Thus, the peripheral edge portion of the surface to be processed of the substrate W is cleaned by the edge rinse solution, and the back surface of the substrate W is cleaned by the back rinse solution.
　本例では、洗浄工程における基板Ｗの回転速度が、膜形成工程の第４の工程における基板Ｗの回転速度（第４の速度Ａ４）と等しく設定されるが、洗浄工程における基板Ｗの回転速度が、膜形成工程の第４の工程における基板Ｗの回転速度と異なっていてもよい。 In this example, the rotational speed of the substrate W in the cleaning step is set equal to the rotational speed (fourth speed A4) of the substrate W in the fourth step of the film forming step, but the rotational speed of the substrate W in the cleaning step However, it may be different from the rotation speed of the substrate W in the fourth step of the film formation step.
　乾燥工程は、時点ｔ８から時点ｔ９の期間に行われる。この場合、時点ｔ８において、エッジリンス液およびバックリンス液の吐出が停止されるとともに、基板Ｗの回転速度が上昇される。乾燥工程では、基板Ｗの回転速度が第５の速度Ａ５に調整される。第５の速度Ａ５は、例えば２０００ｒｐｍである。乾燥工程においては、基板Ｗに付着しているエッジリンス液およびバックリンス液が振り切られ、基板Ｗから除去される。その後、時点ｔ９で基板Ｗの回転が停止される。これにより、基板処理装置１００における一連の処理が終了する。 The drying step is performed in the period from time t8 to time t9. In this case, the discharge of the edge rinse liquid and the back rinse liquid is stopped at time t8, and the rotational speed of the substrate W is increased. In the drying step, the rotational speed of the substrate W is adjusted to the fifth speed A5. The fifth speed A5 is, for example, 2000 rpm. In the drying step, the edge rinse liquid and the back rinse liquid adhering to the substrate W are shaken off and removed from the substrate W. Thereafter, the rotation of the substrate W is stopped at time t9. Thus, a series of processing in the substrate processing apparatus 100 is completed.
　図２の例では、時点ｔ７でエッジリンス液およびバックリンス液が同時に吐出開始されるが、本発明はこれに限定されない。エッジリンス液およびバックリンス液のいずれかの吐出が先に開始されてもよい。また、図２の例では、時点ｔ８でエッジリンス液およびバックリンス液の吐出が同時に停止されるが、本発明はこれに限定されない。エッジリンス液およびバックリンス液のいずれかの吐出が先に停止されてもよい。 In the example of FIG. 2, the edge rinse liquid and the back rinse liquid are simultaneously started to be discharged at time t7, but the present invention is not limited thereto. Discharging of either the edge rinse solution or the back rinse solution may be started first. Further, in the example of FIG. 2, the discharge of the edge rinse liquid and the back rinse liquid is simultaneously stopped at time t8, but the present invention is not limited to this. The discharge of either the edge rinse solution or the back rinse solution may be stopped first.
　［３］膜形成工程
　膜形成工程の詳細について説明する。図３は、図２の膜形成工程における基板Ｗ上のレジスト液の状態の変化を示す図である。 [3] Film Forming Step Details of the film forming step will be described. FIG. 3 is a diagram showing changes in the state of the resist solution on the substrate W in the film forming step of FIG.
　上記のように、第１の工程では、基板Ｗが比較的低い第１の速度Ａ１で回転され、レジスト液が比較的低い第１のレートｒ１で吐出される。この場合、図３（ａ）に示すように、レジストノズル３１から基板Ｗの被処理面の中心部上に吐出されたレジスト液が、基板Ｗの被処理面の径方向外方に徐々に拡げられる。 As described above, in the first step, the substrate W is rotated at a relatively low first speed A1, and the resist solution is discharged at a relatively low first rate r1. In this case, as shown in FIG. 3A, the resist solution discharged from the resist nozzle 31 onto the central portion of the processing surface of the substrate W is gradually spread outward in the radial direction of the processing surface of the substrate W. Be
　第２の工程において、基板Ｗの回転速度が第１の速度Ａ１から第２の速度Ａ２に上昇される。基板Ｗの回転速度の上昇時に、基板Ｗ上のレジスト液に大きな遠心力が働き、基板Ｗの被処理面の全体を覆うようにレジスト液が基板Ｗの被処理面上の全体に拡がる。それにより、図３（ｂ）に示すように、基板Ｗの被処理面上に、レジスト液の膜Ｌ１が形成される。 In the second step, the rotational speed of the substrate W is increased from the first speed A1 to the second speed A2. When the rotational speed of the substrate W is increased, a large centrifugal force acts on the resist solution on the substrate W, and the resist solution spreads over the entire treated surface of the substrate W so as to cover the entire treated surface of the substrate W. Thereby, as shown in FIG. 3B, the film L1 of the resist solution is formed on the processing target surface of the substrate W.
　また、図２の例では、基板Ｗの回転速度が第１の変化率で第１の速度Ａ１から中間速度Ａ１’まで上昇された後に、第２の変化率で中間速度Ａ１’から第２の速度Ａ２まで上昇される。この場合、基板Ｗの回転速度が第１の速度Ａ１から第２の速度Ａ２まで一定の変化率（例えば第２の変化率）で上昇される場合に比べて、基板Ｗの被処理面上でレジスト液が安定的に拡がる。具体的には、平面視においてレジスト液が略円形を維持しながら径方向外方に安定的に拡がる。そのため、無駄なレジスト液の消費を抑制することができる。 Also, in the example of FIG. 2, after the rotational speed of the substrate W is increased from the first speed A1 to the intermediate speed A1 ′ at the first change rate, the intermediate speed A1 ′ to the second at the second change rate. It is increased to the speed A2. In this case, as compared with the case where the rotational speed of the substrate W is increased from the first speed A1 to the second speed A2 at a constant rate of change (for example, the second rate of change), The resist solution spreads stably. Specifically, in plan view, the resist solution stably spreads radially outward while maintaining a substantially circular shape. Therefore, unnecessary consumption of the resist solution can be suppressed.
　その後、基板Ｗが比較的高い第２の速度Ａ２で回転されるとともに、レジスト液が比較的高い第２のレートｒ２で吐出される。それにより、図３（ｃ）に示すように、膜Ｌ１の厚みが全体的に増加する。この場合、レジスト液の吐出レートが高いため、基板Ｗの被処理面上におけるレジスト液の流動性が確保される。それにより、基板Ｗの被処理面上の一部の領域上にレジスト液が蓄積されることが防止され、膜Ｌ１の厚みの均一性が高まる。 Thereafter, the substrate W is rotated at a relatively high second speed A2, and the resist solution is discharged at a relatively high second rate r2. As a result, as shown in FIG. 3C, the thickness of the film L1 is generally increased. In this case, since the discharge rate of the resist solution is high, the fluidity of the resist solution on the processing target surface of the substrate W is secured. As a result, the resist solution is prevented from being accumulated on a partial region of the processing surface of the substrate W, and the uniformity of the thickness of the film L1 is enhanced.
　第３の工程では、基板Ｗの回転速度が第３の速度Ａ３に下降された後、レジスト液の吐出が停止される。この場合、基板Ｗ上のレジスト液に働く遠心力が小さくなり、基板Ｗの被処理面の中心部付近および外縁付近に僅かにレジスト液が蓄積される。これにより、図３（ｄ）に示すように、膜Ｌ１の外縁部および中心部が僅かに上方に隆起した状態になる。膜Ｌ１の外縁部の厚みは、膜Ｌ１の中心部の厚みよりも小さいことが好ましい。 In the third step, after the rotational speed of the substrate W is lowered to the third speed A3, the discharge of the resist solution is stopped. In this case, the centrifugal force acting on the resist solution on the substrate W is reduced, and the resist solution is slightly accumulated near the central portion and the outer edge of the surface to be processed of the substrate W. As a result, as shown in FIG. 3D, the outer edge portion and the central portion of the film L1 are slightly raised upward. The thickness of the outer edge portion of the film L1 is preferably smaller than the thickness of the central portion of the film L1.
　レジスト液の吐出が停止される際には、レジストノズル３１からレジスト液の滴が落下しやすい。仮に、基板Ｗが高速で回転される状態でレジスト液の滴が基板Ｗ上の膜Ｌ１に落下すると、膜Ｌ１の表面にレジスト液の落下跡が形成されたり、膜Ｌ１の状態が不安定になったりする。本例では、基板Ｗの回転速度が第２の速度Ａ２から第３の速度Ａ３に下降された後にレジスト液の吐出が停止される。それにより、レジスト液の滴が基板Ｗ上の膜Ｌ１に落下しても、落下跡の形成が防止されるとともに、膜Ｌ１が安定に保持される。 When discharge of the resist solution is stopped, droplets of the resist solution are likely to drop from the resist nozzle 31. If a drop of the resist solution falls onto the film L1 on the substrate W while the substrate W is rotated at high speed, a drop of the resist solution is formed on the surface of the film L1, or the state of the film L1 becomes unstable. To become In this example, the discharge of the resist solution is stopped after the rotational speed of the substrate W is lowered from the second speed A2 to the third speed A3. Thereby, even if a drop of the resist solution falls onto the film L1 on the substrate W, the formation of a drop mark is prevented and the film L1 is stably held.
　その後の第４の工程では、基板Ｗが比較的高い第４の速度Ａ４で回転される。この場合、基板Ｗ上の膜Ｌ１の全体的な厚みが第４の速度Ａ４に応じて微調整される。具体的には、第４の速度Ａ４が高いほど、膜Ｌ１の全体的な厚みが小さくなり、第４の速度Ａ４が低いほど、膜Ｌ１の全体的な厚みが大きくなる。第４の工程において、膜Ｌ１の断面形状は大きく変化せず、図３（ｄ）の状態にほぼ維持される。第４の工程の終了時点で、膜Ｌ１が固化している。 In the subsequent fourth step, the substrate W is rotated at a relatively high fourth speed A4. In this case, the overall thickness of the film L1 on the substrate W is finely adjusted in accordance with the fourth velocity A4. Specifically, the higher the fourth speed A4, the smaller the overall thickness of the film L1, and the lower the fourth speed A4, the greater the overall thickness of the film L1. In the fourth step, the cross-sectional shape of the film L1 does not change significantly, and is substantially maintained in the state of FIG. 3 (d). At the end of the fourth step, the film L1 is solidified.
　通常のフォトリソグラフィー工程では、基板Ｗの外縁から一定幅の範囲内にあるレジスト膜（レジスト液から形成された膜）の部分には、露光パターンが形成されない。したがって、図３（ｄ）の例のような膜Ｌ１の外縁部の隆起は、露光パターンの形成にほとんど影響しない。 In a normal photolithography process, an exposure pattern is not formed on the portion of the resist film (film formed of a resist solution) within a certain width from the outer edge of the substrate W. Therefore, the bumps on the outer edge of the film L1 as in the example of FIG. 3D hardly affect the formation of the exposure pattern.
　次に、膜形成工程の比較例について説明する。図４は、膜形成工程の比較例における基板Ｗの回転速度の変化およびレジスト液の吐出レートの変化について説明するための図である。図４の膜形成工程が図２の膜形成工程と異なる点は、第１の工程において、レジスト液の吐出レートが第２のレートｒ２に調整され、第２の工程において、レジスト液の吐出レートが第１のレートｒ１に調整される点である。第３および第４の工程については、図２の例と同じである。 Next, a comparative example of the film formation step will be described. FIG. 4 is a diagram for explaining the change in the rotational speed of the substrate W and the change in the discharge rate of the resist solution in the comparative example of the film formation step. The film forming step of FIG. 4 is different from the film forming step of FIG. 2 in that the discharge rate of the resist solution is adjusted to the second rate r2 in the first step, and the discharge rate of the resist solution in the second step. Is adjusted to the first rate r1. The third and fourth steps are the same as in the example of FIG.
　図５は、比較例における基板Ｗ上のレジスト液の状態の変化を示す図である。第１の工程においては、基板Ｗが比較的低い第１の速度Ａ１で回転され、レジスト液が比較的高い第２のレートｒ２で吐出される。この場合、基板Ｗの被処理面の中心部に比較的多くのレジスト液が供給される一方で、基板Ｗ上のレジスト液に働く遠心力が比較的小さい。そのため、レジスト液の粘度が高い場合には、図５（ａ）に示すように、基板Ｗの被処理面の中心部上にレジスト液が蓄積されやすい。 FIG. 5 is a diagram showing changes in the state of the resist solution on the substrate W in the comparative example. In the first step, the substrate W is rotated at a relatively low first speed A1, and the resist solution is discharged at a relatively high second rate r2. In this case, a relatively large amount of resist solution is supplied to the central portion of the processing surface of the substrate W, while the centrifugal force acting on the resist solution on the substrate W is relatively small. Therefore, when the viscosity of the resist solution is high, as shown in FIG. 5A, the resist solution tends to be accumulated on the central portion of the surface to be processed of the substrate W.
　この場合、第２の工程で基板Ｗの回転速度が第２の速度Ａ２に上昇されても、基板Ｗの被処理面の中心部上に蓄積されたレジスト液が径方向に十分に拡がらない。そのため、図５（ｂ）に示すように、基板Ｗの被処理面上に形成される膜Ｌ１の中心部が上方に大きく隆起した状態になる。 In this case, even if the rotational speed of the substrate W is increased to the second speed A2 in the second step, the resist solution accumulated on the central portion of the processed surface of the substrate W does not spread sufficiently in the radial direction. . Therefore, as shown in FIG. 5B, the central portion of the film L1 formed on the processing target surface of the substrate W is in a state of being greatly protruded upward.
　その後、基板Ｗが比較的高い第２の速度Ａ２で回転され、レジスト液が比較的低い第１のレートｒ１で吐出される。この場合、レジスト液の吐出レートが低いため、基板Ｗの被処理面の中心部上に吐出されるレジスト液の流動性が低い。そのため、レジスト液が、基板Ｗの被処理面の外縁まで到達しにくく、基板Ｗの被処理面の周縁部上に蓄積される。そのため、図５（ｃ）に示すように、膜Ｌ１の周縁部が上方に隆起する。その後の第３の工程および第４の工程においても、膜Ｌ１の中心部および周縁部が上方に大きく隆起した状態が維持される。 Thereafter, the substrate W is rotated at a relatively high second speed A2, and the resist solution is discharged at a relatively low first rate r1. In this case, since the discharge rate of the resist solution is low, the flowability of the resist solution discharged onto the central portion of the processing target surface of the substrate W is low. Therefore, the resist solution hardly reaches the outer edge of the processed surface of the substrate W, and is accumulated on the peripheral portion of the processed surface of the substrate W. Therefore, as shown in FIG. 5C, the peripheral portion of the film L1 bulges upward. Also in the subsequent third and fourth steps, the state in which the central portion and the peripheral portion of the film L1 are largely raised upward is maintained.
　このように、比較例においては、レジスト液の粘度が高い場合に、膜Ｌ１の中心部および周縁部の厚みが上方に大きく隆起する。したがって、膜Ｌ１の厚みの均一性が低くなる。 As described above, in the comparative example, when the viscosity of the resist solution is high, the thickness of the central portion and the peripheral portion of the film L1 largely bulges upward. Therefore, the uniformity of the thickness of the film L1 is reduced.
　それに対して、本実施の形態では、第１の工程でレジスト液の吐出レートが比較的低く調整されるため、レジスト液の粘度が高い場合でも、レジスト液の消費量を抑制しつつ基板Ｗの被処理面上でレジスト液を径方向外方に適切に拡げることができる。また、第２の工程でレジスト液の吐出レートが比較的高く調整されるため、レジスト液の粘度が高い場合でも、基板Ｗの被処理面上におけるレジスト液の流動性が確保される。それにより、基板Ｗの被処理面の周縁部上にレジスト液が蓄積されることを防止することができ、膜Ｌ１の厚みの均一性を高めることができる。 On the other hand, in the present embodiment, since the discharge rate of the resist solution is adjusted to be relatively low in the first step, the consumption of the resist solution is suppressed while the resist solution consumption is suppressed even when the viscosity of the resist solution is high The resist solution can be appropriately spread radially outward on the surface to be treated. In addition, since the discharge rate of the resist solution is adjusted to be relatively high in the second step, the flowability of the resist solution on the surface to be processed of the substrate W is secured even when the viscosity of the resist solution is high. Thereby, the resist solution can be prevented from being accumulated on the peripheral portion of the surface to be processed of the substrate W, and the uniformity of the thickness of the film L1 can be enhanced.
　［４］動作
　図６は、基板処理装置１００の機能的な構成を示すブロック図である。図６に示すように、基板処理装置１００は、保持制御部５１、吐出制御部５３、第１の吐出レート調整部５４、第２の吐出レート調整部５５、第１の回転速度調整部５６、第２の回転速度調整部５７、第３の回転速度調整部５８、第４の回転速度調整部５９、第５の回転速度調整部６０および時間制御部６１を含む。これらの構成要素（５１～６１）の機能は、制御部４０のＣＰＵがＲＯＭまたは記憶装置等の記憶媒体に記憶されたコンピュータプログラムを実行することにより実現される。 [4] Operation FIG. 6 is a block diagram showing a functional configuration of the substrate processing apparatus 100. As shown in FIG. 6, the substrate processing apparatus 100 includes a holding control unit 51, a discharge control unit 53, a first discharge rate adjustment unit 54, a second discharge rate adjustment unit 55, a first rotation speed adjustment unit 56, A second rotation speed adjustment unit 57, a third rotation speed adjustment unit 58, a fourth rotation speed adjustment unit 59, a fifth rotation speed adjustment unit 60, and a time control unit 61 are included. The functions of these components (51 to 61) are realized by the CPU of the control unit 40 executing a computer program stored in a storage medium such as a ROM or a storage device.
　保持制御部５１は、回転保持部１０による基板Ｗの保持を制御する。吐出制御部５３は、バルブＶ１の開閉を制御することにより、レジストノズル３１（図１）からのレジスト液の吐出の開始および終了のタイミングを制御する。第１の吐出レート調整部５４は、ポンプ４５を制御することにより、レジストノズル３１からのレジスト液の吐出レートを第１のレートｒ１に調整する。第２の吐出レート調整部５５は、ポンプ４５を制御することにより、レジストノズル３１からのレジスト液の吐出レートを第２のレートｒ２に調整する。 The holding control unit 51 controls the holding of the substrate W by the rotation holding unit 10. The discharge control unit 53 controls the timing of the start and end of discharge of the resist solution from the resist nozzle 31 (FIG. 1) by controlling the opening and closing of the valve V1. The first discharge rate adjustment unit 54 controls the pump 45 to adjust the discharge rate of the resist solution from the resist nozzle 31 to a first rate r1. The second discharge rate adjustment unit 55 controls the pump 45 to adjust the discharge rate of the resist solution from the resist nozzle 31 to a second rate r2.
　第１の回転速度調整部５６は、モータ１１を制御することにより、基板Ｗの回転速度を第１の速度Ａ１に調整する。第２の回転速度調整部５７は、モータ１１を制御することにより、基板Ｗの回転速度を第２の速度Ａ２に調整する。第３の回転速度調整部５８は、モータ１１を制御することにより、基板Ｗの回転速度を第３の速度Ａ３に調整する。第４の回転速度調整部５９は、モータ１１を制御することにより、基板Ｗの回転速度を第４の速度Ａ４に調整する。第５の回転速度調整部６０は、モータ１１を制御することにより、基板Ｗの回転速度を第５の速度Ａ５に調整する。 The first rotational speed adjustment unit 56 controls the motor 11 to adjust the rotational speed of the substrate W to a first speed A1. The second rotation speed adjustment unit 57 controls the motor 11 to adjust the rotation speed of the substrate W to a second speed A2. The third rotation speed adjustment unit 58 controls the motor 11 to adjust the rotation speed of the substrate W to a third speed A3. The fourth rotational speed adjustment unit 59 adjusts the rotational speed of the substrate W to a fourth speed A4 by controlling the motor 11. The fifth rotation speed adjustment unit 60 controls the motor 11 to adjust the rotation speed of the substrate W to a fifth speed A5.
　時間制御部６１は、保持制御部５１、吐出制御部５３、第１の吐出レート調整部５４、第２の吐出レート調整部５５、第１の回転速度調整部５６、第２の回転速度調整部５７、第３の回転速度調整部５８、第４の回転速度調整部５９および第５の回転速度調整部６０の動作の開始および終了のタイミングを制御する。 The time control unit 61 includes a holding control unit 51, a discharge control unit 53, a first discharge rate adjustment unit 54, a second discharge rate adjustment unit 55, a first rotation speed adjustment unit 56, and a second rotation speed adjustment unit. 57. The timing of the start and end of the operation of the third rotation speed adjustment unit 58, the fourth rotation speed adjustment unit 59, and the fifth rotation speed adjustment unit 60 is controlled.
　図７は、基板処理装置１００の動作を示すフローチャートである。本例では、図２のプリウエット工程、洗浄工程および乾燥工程の時間が、プリウエット時間、洗浄時間および乾燥時間として予め定められる。また、図２の膜形成工程の第１の工程、第２の工程、第３の工程および第４の工程の時間が、低レート処理時間、高レート処理時間、低速回転時間および高速回転時間として予め定められる。 FIG. 7 is a flowchart showing the operation of the substrate processing apparatus 100. In this example, the times of the pre-wetting step, the washing step and the drying step of FIG. 2 are predetermined as the pre-wetting time, the washing time and the drying time. In addition, the times of the first step, the second step, the third step and the fourth step of the film forming step of FIG. 2 are as low rate processing time, high rate processing time, low speed rotation time and high speed rotation time. It is determined in advance.
　初期状態では、図１のバルブＶ１～Ｖ４は閉じられている。回転保持部１０上に基板Ｗが載置されると、保持制御部５１が回転保持部１０を制御し、回転保持部１０が基板Ｗを保持する（ステップＳ１）。次に、吐出制御部５３がバルブＶ２を開くことにより、溶剤ノズル３２からの溶剤の吐出を開始する（ステップＳ２）。ステップＳ２の処理から予め定められたプリウエット時間が経過すると、吐出制御部５３は、バルブＶ２を閉じる。 In the initial state, the valves V1 to V4 of FIG. 1 are closed. When the substrate W is placed on the rotation holding unit 10, the holding control unit 51 controls the rotation holding unit 10, and the rotation holding unit 10 holds the substrate W (step S1). Next, the discharge control unit 53 opens the valve V2 to start the discharge of the solvent from the solvent nozzle 32 (step S2). When a predetermined pre-wet time has elapsed from the process of step S2, the discharge control unit 53 closes the valve V2.
　次に、第１の回転速度調整部５６が回転保持部１０を制御して、基板Ｗの回転を開始する（ステップＳ３）。この場合、第１の回転速度調整部５６は、基板Ｗの回転速度を第１の速度Ａ１に調整する。また、吐出制御部５３がバルブＶ１を開くことにより、レジストノズル３１からのレジスト液の吐出を開始する（ステップＳ４）この場合、第１の吐出レート調整部５４が、レジスト液の吐出レートを第１のレートｒ１に調整する。 Next, the first rotation speed adjustment unit 56 controls the rotation holding unit 10 to start the rotation of the substrate W (step S3). In this case, the first rotational speed adjustment unit 56 adjusts the rotational speed of the substrate W to the first speed A1. Further, the discharge control unit 53 starts discharging the resist solution from the resist nozzle 31 by opening the valve V1 (step S4). In this case, the first discharge rate adjustment unit 54 selects the discharge rate of the resist solution Adjust to a rate r1 of 1.
　ステップＳ３，Ｓ４の処理から予め定められた低レート処理時間が経過すると、第２の回転速度調整部５７が基板Ｗの回転速度を第２の速度Ａ２に上昇させるとともに（ステップＳ５）、第２の吐出レート調整部５５がレジスト液の吐出レートを第２のレートｒ２に上昇させる（ステップＳ６）。ステップＳ５，Ｓ６の処理から予め定められた高レート処理時間が経過すると、第３の回転速度調整部５８が、基板Ｗの回転速度を第３の速度Ａ３に下降させる（ステップＳ７）。次に、吐出制御部５３が、バルブＶ２を閉じることによりレジストノズル３１からのレジスト液の吐出を停止する（ステップＳ８）。 When a predetermined low rate processing time has elapsed from the processing in steps S3 and S4, the second rotation speed adjustment unit 57 increases the rotation speed of the substrate W to the second speed A2 (step S5), and The discharge rate adjustment unit 55 raises the discharge rate of the resist solution to the second rate r2 (step S6). When the predetermined high-rate processing time has elapsed from the processing in steps S5 and S6, the third rotation speed adjustment unit 58 reduces the rotation speed of the substrate W to the third speed A3 (step S7). Next, the discharge control unit 53 stops the discharge of the resist solution from the resist nozzle 31 by closing the valve V2 (step S8).
　ステップＳ７の処理から予め定められた低速回転時間が経過すると、第４の回転速度調整部５９が、基板Ｗの回転速度を第４の速度Ａ４に上昇させる（ステップＳ９）。ステップＳ９の処理から予め定められた高速回転時間が経過すると、吐出制御部５３が、バルブＶ３，Ｖ４を開くことにより、エッジリンスノズル３３からのエッジリンス液の吐出およびバックリンスノズル３４からのバックリンス液の吐出を開始する（ステップＳ１０）。ステップＳ１０の処理から予め定められた洗浄時間が経過すると、吐出制御部５３は、バルブＶ３，Ｖ４を閉じることによりエッジリンス液の吐出およびバックリンス液の吐出を停止する。 When a predetermined low speed rotation time has elapsed from the process of step S7, the fourth rotation speed adjustment unit 59 increases the rotation speed of the substrate W to the fourth speed A4 (step S9). When a predetermined high-speed rotation time has elapsed from the process of step S9, the discharge control unit 53 opens the valves V3 and V4 to discharge the edge rinse liquid from the edge rinse nozzle 33 and back from the back rinse nozzle 34. Discharge of the rinse liquid is started (step S10). When a predetermined cleaning time has elapsed from the process of step S10, the discharge control unit 53 stops the discharge of the edge rinse liquid and the discharge of the back rinse liquid by closing the valves V3 and V4.
　次に、第５の回転速度調整部６０が、基板Ｗの回転速度を速度Ａ５に上昇させる（ステップＳ１１）。これにより、基板Ｗからエッジリンス液およびバックリンス液が振り切られる。ステップＳ１１の処理から予め定められた乾燥時間が経過すると、第５の回転速度調整部６０が、基板Ｗの回転を停止する（ステップＳ１２）。また、保持制御部５１が、回転保持部１０による基板Ｗの保持を解除する（ステップＳ１３）。その後、回転保持部１０上から基板Ｗが受け取られ、基板処理装置１００の一連の動作が終了する。 Next, the fifth rotation speed adjustment unit 60 increases the rotation speed of the substrate W to the speed A5 (step S11). Thereby, the edge rinse liquid and the back rinse liquid are shaken off from the substrate W. When a predetermined drying time has elapsed from the process of step S11, the fifth rotation speed adjustment unit 60 stops the rotation of the substrate W (step S12). Further, the holding control unit 51 releases the holding of the substrate W by the rotation holding unit 10 (step S13). Thereafter, the substrate W is received from above the rotation holding unit 10, and the series of operations of the substrate processing apparatus 100 are completed.
　［５］効果
　本実施の形態に係る基板処理装置１００においては、膜形成工程の第１の工程において、回転する基板Ｗの一面（被処理面）の中心部に吐出されたレジスト液が基板Ｗの一面上で拡がるように、レジスト液の吐出レートが第１のレートｒ１に調整される。また、膜形成工程の第２の工程において、回転する基板Ｗの一面の全体に拡がったレジスト液の厚みが増加するように、レジスト液の吐出レートが第１のレートｒ１よりも高い第２のレートｒ２に調整される。 [5] Effects In the substrate processing apparatus 100 according to the present embodiment, in the first step of the film forming step, the resist solution discharged to the central portion of one surface (surface to be processed) of the rotating substrate W is the substrate W The discharge rate of the resist solution is adjusted to the first rate r1 so as to spread on one side. Further, in the second step of the film forming step, a second discharge rate of the resist solution is higher than the first rate r1 so that the thickness of the resist solution spread over the entire surface of the rotating substrate W is increased. It is adjusted to rate r2.
　この場合、第１の工程で比較的低い第１のレートｒ１でレジスト液が吐出されるため、レジスト液の消費量を抑制しつつ基板Ｗの一面上でレジスト液を拡げることができる。また、第２の工程で比較的高い第２のレートｒ２でレジスト液が吐出されるため、レジスト液の粘度が高い場合であっても、基板Ｗの一面上におけるレジスト液の流動性が確保される。それにより、基板Ｗの一面の一部の領域にレジスト液が蓄積されることが防止される。そのため、基板Ｗの一面上におけるレジスト液の厚みの均一性が高まる。したがって、レジスト液の消費量を抑制しつつ基板Ｗ上に形成されるレジスト液の膜の厚みの均一性を高めることができる。 In this case, since the resist solution is discharged at a relatively low first rate r1 in the first step, the resist solution can be spread on one surface of the substrate W while suppressing the consumption of the resist solution. In addition, since the resist solution is discharged at a relatively high second rate r2 in the second step, the fluidity of the resist solution on one surface of the substrate W is secured even when the viscosity of the resist solution is high. Ru. Thereby, the resist solution is prevented from being accumulated in a partial region of one surface of the substrate W. Therefore, the uniformity of the thickness of the resist solution on one surface of the substrate W is enhanced. Therefore, the uniformity of the thickness of the film of the resist solution formed on the substrate W can be enhanced while suppressing the consumption of the resist solution.
　また、本実施の形態では、第１の工程で基板Ｗの回転速度が第１の速度Ａ１に調整され、第２の工程で基板Ｗの回転速度が第１の速度Ａ１よりも高い第２の速度Ａ２に調整される。この場合、第１の工程で基板Ｗが比較的低い速度で回転するため、基板Ｗの一面上でレジスト液を安定的に拡げることができる。それにより、レジスト液の消費量をさらに抑制することができる。また、第２の工程で基板Ｗが比較的高い速度で回転するため、レジスト液に働く遠心力が大きくなる。それにより、基板Ｗの一面の外縁までレジスト液を適切に拡げることができ、レジスト液の厚みの均一性をより高めることができる。 In the present embodiment, the rotational speed of the substrate W is adjusted to the first speed A1 in the first step, and the rotational speed of the substrate W is higher than the first speed A1 in the second step. It is adjusted to speed A2. In this case, since the substrate W rotates at a relatively low speed in the first step, the resist solution can be stably spread on one surface of the substrate W. Thus, the consumption of the resist solution can be further suppressed. In addition, since the substrate W rotates at a relatively high speed in the second step, the centrifugal force acting on the resist solution is increased. As a result, the resist solution can be appropriately spread to the outer edge of one surface of the substrate W, and the uniformity of the thickness of the resist solution can be further enhanced.
　また、本実施の形態では、膜形成工程の第３の工程で、基板Ｗの回転速度が第３の速度Ａ３に下降された後にレジスト液の吐出が停止される。これにより、レジスト液の吐出が停止される際にレジスト液の滴が基板Ｗ上のレジスト液の表面に落下しても、落下跡の形成が防止されるとともに、基板Ｗ上のレジスト液が安定に保持される。 Further, in the present embodiment, in the third step of the film formation step, the discharge of the resist solution is stopped after the rotational speed of the substrate W is lowered to the third speed A3. Thus, even if a drop of the resist solution falls onto the surface of the resist solution on the substrate W when the discharge of the resist solution is stopped, the formation of a drop mark is prevented and the resist solution on the substrate W is stable. Will be held by
　また、本実施の形態では、膜形成工程の第４の工程で、基板Ｗの回転速度が第３の速度Ａ３よりも高い第４の速度Ａ４に調整される。これにより、第４の工程で基板Ｗの一面上のレジスト液の膜の厚みを適切に調整することができる。 Further, in the present embodiment, in the fourth step of the film forming step, the rotational speed of the substrate W is adjusted to the fourth speed A4 higher than the third speed A3. Thereby, the thickness of the film of the resist solution on one surface of the substrate W can be appropriately adjusted in the fourth step.
　［６］他の実施の形態
　（ａ）上記実施の形態においては、第１の工程でレジスト液の吐出レートが第１のレートｒ１に調整され、第２の工程でレジスト液の吐出レートが第２のレートｒ２に調整されるが、第１の工程でレジスト液の吐出レートが第１のレートｒ１を含む複数段階に調整されてもよく、第２の工程でレジスト液の吐出レートが第２のレートｒ２を含む複数段階に調整されてもよい。また、第１の工程および第２の工程の少なくとも一方において、レジスト液の吐出レートが連続的に変化するように調整されてもよい。 [6] Other Embodiments (a) In the above embodiment, the discharge rate of the resist solution is adjusted to the first rate r1 in the first step, and the discharge rate of the resist solution is the first in the second step. In the first step, the discharge rate of the resist solution may be adjusted in a plurality of steps including the first rate r1. In the second step, the discharge rate of the resist solution is adjusted to the second rate r2. It may be adjusted to multiple stages including the rate r2 of. In addition, in at least one of the first step and the second step, the discharge rate of the resist solution may be adjusted to be changed continuously.
　（ｂ）上記実施の形態においては、第１の工程で基板Ｗの回転速度が第１の速度Ａ１に調整され、第２の工程で基板Ｗの回転速度が第２の速度Ａ２に調整されるが、第１の工程で基板Ｗの回転速度が第１の速度Ａ１を含む複数段階に調整されてもよく、第２の工程で基板Ｗの回転速度が第２の速度Ａ２を含む複数段階に調整されてもよい。また、第１の工程および第２の工程の少なくとも一方において、基板Ｗの回転速度が連続的に変化するように調整されてもよい。 (B) In the above embodiment, the rotational speed of the substrate W is adjusted to the first speed A1 in the first step, and the rotational speed of the substrate W is adjusted to the second speed A2 in the second step. However, in the first step, the rotational speed of the substrate W may be adjusted in multiple steps including the first speed A1, and in the second step, the rotational speed of the substrate W is in multiple steps including the second speed A2. It may be adjusted. In addition, in at least one of the first step and the second step, the rotational speed of the substrate W may be adjusted so as to change continuously.
　（ｃ）上記実施の形態においては、基板Ｗの回転速度が第１の速度Ａ１に調整されるタイミングとレジスト液の吐出レートが第１のレートｒ１に調整されるタイミングとが同じであるが、これらのタイミングが互いにずれていてもよい。同様に、上記実施の形態においては、基板Ｗの回転速度が第２の速度Ａ２に調整されるタイミングとレジスト液の吐出レートが第２のレートｒ２に調整されるタイミングとが同じであるが、これらのタイミングが互いにずれていてもよい。 (C) In the above embodiment, the timing at which the rotational speed of the substrate W is adjusted to the first speed A1 and the timing at which the discharge rate of the resist solution is adjusted to the first rate r1 are the same. These timings may be offset from each other. Similarly, in the above embodiment, the timing at which the rotational speed of the substrate W is adjusted to the second speed A2 and the timing at which the discharge rate of the resist solution is adjusted to the second rate r2 are the same. These timings may be offset from each other.
　（ｄ）上記実施の形態においては、基板Ｗの回転速度が第２の速度Ａ２から第３の速度Ａ３に下降された後にレジスト液の吐出が停止されるが、基板Ｗが第２の速度Ａ２で回転されている状態でレジスト液の吐出が停止されてもよい。 (D) In the above embodiment, the discharge of the resist solution is stopped after the rotational speed of the substrate W is lowered from the second speed A2 to the third speed A3, but the substrate W has a second speed A2 The discharge of the resist solution may be stopped in the state of being rotated by the
　（ｅ）上記実施の形態においては、基板Ｗの回転速度が第２の速度Ａ２から第３の速度Ａ３に下降された後に基板Ｗの回転速度が第３の速度Ａ３から第４の速度Ａ４に上昇されるが、基板Ｗの回転速度が第２の速度Ａ２から第４の速度Ａ４に直接的に変化されてもよい。 (E) In the above embodiment, after the rotational speed of the substrate W is decreased from the second speed A2 to the third speed A3, the rotational speed of the substrate W is changed from the third speed A3 to the fourth speed A4. Although raised, the rotational speed of the substrate W may be directly changed from the second speed A2 to the fourth speed A4.
　（ｆ）上記実施の形態では、塗布液としてレジスト液が用いられるが、レジスト液に代えて、下層膜用塗布液または層間絶縁膜用塗布液等の他の塗布液が用いられてもよい。 (F) In the above embodiment, a resist solution is used as the coating solution, but instead of the resist solution, another coating solution such as a lower layer film coating solution or an interlayer insulating film coating solution may be used.

Claims (10)

  1. 基板を水平姿勢で保持して回転させる回転保持部と、
    　前記回転保持部により回転する基板の一面の中心部に塗布液を吐出する塗布液吐出系と、
    　第１の期間に、前記塗布液吐出系から基板の前記一面の中心部に吐出された塗布液が基板の前記一面上で拡がるように、前記塗布液吐出系からの塗布液の吐出レートを第１のレートに調整する第１の吐出レート調整部と、
    　前記第１の期間の後の第２の期間に、基板の前記一面の全体に拡がった塗布液の厚みが増加するように、前記塗布液吐出系からの塗布液の吐出レートを前記第１のレートよりも高い第２のレートに調整する第２の吐出レート調整部とを備える、基板処理装置。     A rotary holder that holds and rotates the substrate in a horizontal posture;
    A coating liquid discharge system that discharges a coating liquid to a central portion of one surface of the substrate rotated by the rotation holding unit;
    The rate of discharge of the coating liquid from the coating liquid discharge system is set so that the coating liquid discharged from the coating liquid discharge system to the central portion of the one surface of the substrate during the first period spreads over the one surface of the substrate. A first discharge rate adjustment unit for adjusting to a rate of 1;
    In the second period after the first period, the discharge rate of the coating solution from the coating solution discharge system is adjusted to the first rate so that the thickness of the coating solution spread over the entire surface of the substrate is increased. And a second discharge rate adjustment unit configured to adjust the second rate higher than the rate.
  2. 前記第１の期間に、前記回転保持部による基板の回転速度を第１の速度に調整する第１の回転速度調整部と、
    　前記第２の期間に、前記回転保持部による基板の回転速度を前記第１の速度よりも高い第２の速度に調整する第２の回転速度調整部とをさらに備える、請求項１記載の基板処理装置。     A first rotation speed adjustment unit that adjusts the rotation speed of the substrate by the rotation holding unit to a first speed during the first period;
    The substrate according to claim 1, further comprising: a second rotation speed adjusting unit adjusting the rotation speed of the substrate by the rotation holding unit to a second speed higher than the first speed during the second period. Processing unit.
  3. 基板を水平姿勢で保持して回転させる回転保持部と、
    　前記回転保持部により回転する基板の一面の中心部に塗布液を吐出する塗布液吐出系と、
    　第１の期間に、前記塗布液吐出系からの塗布液の吐出レートを第１のレートに調整する第１の吐出レート調整部と、
    　前記第１の期間の後の第２の期間に、前記塗布液吐出系からの塗布液の吐出レートを前記第１のレートよりも高い第２のレートに調整する第２の吐出レート調整部と、
    　前記第１の期間に、前記回転保持部による基板の回転速度を第１の速度に調整する第１の回転速度調整部と、
    　前記第２の期間に、前記回転保持部による基板の回転速度を前記第１の速度よりも高い第２の速度に調整する第２の回転速度調整部とを備える、基板処理装置。     A rotary holder that holds and rotates the substrate in a horizontal posture;
    A coating liquid discharge system that discharges a coating liquid to a central portion of one surface of the substrate rotated by the rotation holding unit;
    A first discharge rate adjustment unit configured to adjust a discharge rate of the coating liquid from the coating liquid discharge system to a first rate in a first period;
    A second discharge rate adjusting unit that adjusts a discharge rate of the coating liquid from the coating liquid discharge system to a second rate higher than the first rate in a second period after the first period; ,
    A first rotation speed adjustment unit that adjusts the rotation speed of the substrate by the rotation holding unit to a first speed during the first period;
    A substrate processing apparatus, comprising: a second rotation speed adjustment unit configured to adjust the rotation speed of the substrate by the rotation holding unit to a second speed higher than the first speed during the second period.
  4. 前記第２の期間の後の第３の期間に、前記回転保持部による基板の回転速度を前記第１の速度よりも高くかつ前記第２の速度よりも低い第３の速度に調整する第３の回転速度調整部と、
    　前記第３の期間に塗布液の吐出を停止させる吐出停止部とをさらに備える、請求項２または３記載の基板処理装置。     Adjusting a rotational speed of the substrate by the rotary holding unit to a third speed higher than the first speed and lower than the second speed in a third period after the second period; Rotation speed adjustment unit,
    The substrate processing apparatus according to claim 2, further comprising: a discharge stop unit that stops the discharge of the coating liquid in the third period.
  5. 前記第３の期間の後の第４の期間に、前記回転保持部による基板の回転速度を前記第３の速度よりも高くかつ前記第２の速度よりも低い第４の速度に調整する第４の回転速度調整部をさらに備える、請求項４記載の基板処理装置。 Adjusting a rotational speed of the substrate by the rotation holding unit to a fourth speed higher than the third speed and lower than the second speed in a fourth period after the third period; The substrate processing apparatus according to claim 4, further comprising a rotational speed adjustment unit of
  6. 第１の期間に、基板の一面上で塗布液が拡がるように、回転保持部により基板を回転させつつ塗布液吐出系により基板の前記一面の中心部に第１のレートで塗布液を吐出するステップと、
    　前記第１の期間の後の第２の期間に、基板の前記一面の全体に広がった塗布液の厚みが増加されるように、前記回転保持部により基板を回転させつつ前記塗布液吐出系により基板の前記一面の中心部に前記第１のレートよりも高い第２のレートで塗布液を吐出するステップとを含む、基板処理方法。     The coating liquid is discharged at a first rate to the center of the one surface of the substrate by the coating liquid discharging system while rotating the substrate by the rotation holding unit so that the coating liquid is spread on the one surface of the substrate during the first period. Step and
    In the second period after the first period, the coating liquid discharge system rotates the substrate by the rotation holding unit so that the thickness of the coating liquid spread over the entire surface of the substrate is increased. Discharging the coating liquid at a second rate higher than the first rate to the central portion of the one surface of the substrate.
  7. 前記第１の期間に、前記回転保持部による基板の回転速度を第１の速度に調整するステップと、
    　前記第２の期間に、前記回転保持部による基板の回転速度を前記第１の速度よりも高い第２の速度に調整するステップとをさらに含む、請求項６記載の基板処理方法。     Adjusting the rotation speed of the substrate by the rotation holding unit to a first speed during the first period;
    7. The substrate processing method according to claim 6, further comprising the step of adjusting the rotational speed of the substrate by the rotational holding unit to a second speed higher than the first speed during the second period.
  8. 第１の期間に、回転保持部により基板を第１の速度で回転させつつ塗布液吐出系により基板の一面の中心部に第１のレートで塗布液を吐出するステップと、
    　前記第１の期間の後の第２の期間に、前記回転保持部により基板を前記第１の速度よりも高い第２の速度で回転させつつ前記塗布液吐出系により基板の前記一面の中心部に前記第１のレートよりも高い第２のレートで塗布液を吐出するステップとを含む、基板処理方法。     Discharging the coating liquid at a first rate to a central portion of one surface of the substrate by the coating liquid discharge system while rotating the substrate at a first speed by the rotation holding unit during the first period;
    In the second period after the first period, the central portion of the one surface of the substrate is rotated by the coating liquid discharge system while rotating the substrate at a second speed higher than the first speed by the rotation holding unit. Discharging the coating liquid at a second rate higher than the first rate.
  9. 前記第２の期間の後の第３の期間に、前記回転保持部による基板の回転速度を前記第１の速度よりも高くかつ前記第２の速度よりも低い第３の速度に調整するステップと、
    　前記第３の期間に塗布液の吐出を停止させるステップとをさらに含む、請求項７または８記載の基板処理方法。     Adjusting the rotation speed of the substrate by the rotation holding unit to a third speed higher than the first speed and lower than the second speed in a third period after the second period; ,
    9. The substrate processing method according to claim 7, further comprising the step of stopping the discharge of the coating liquid in the third period.
  10. 前記第３の期間の後の第４の期間に、前記回転保持部による基板の回転速度を前記第３の速度よりも高くかつ前記第２の速度よりも低い第４の速度に調整するステップをさらに含む、請求項９記載の基板処理方法。 Adjusting a rotation speed of the substrate by the rotation holding unit to a fourth speed higher than the third speed and lower than the second speed in a fourth period after the third period The substrate processing method according to claim 9, further comprising:
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