JPH0414813A - Apparatus and method for resist coating - Google Patents
Apparatus and method for resist coatingInfo
- Publication number
- JPH0414813A JPH0414813A JP11909090A JP11909090A JPH0414813A JP H0414813 A JPH0414813 A JP H0414813A JP 11909090 A JP11909090 A JP 11909090A JP 11909090 A JP11909090 A JP 11909090A JP H0414813 A JPH0414813 A JP H0414813A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- resist
- cleaning nozzle
- nozzle
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000576 coating method Methods 0.000 title claims abstract description 25
- 239000011248 coating agent Substances 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 title claims abstract description 7
- 238000004140 cleaning Methods 0.000 claims abstract description 32
- 239000007788 liquid Substances 0.000 claims abstract description 26
- 239000007921 spray Substances 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 4
- 239000002699 waste material Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Application Of Or Painting With Fluid Materials (AREA)
- Coating Apparatus (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はフォトプロセスに用いられるレジスト塗布装置
（スピンコーター）とレジスト塗布方法の改善に関する
。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to improvements in a resist coating device (spin coater) and a resist coating method used in photoprocessing.
半導体デバイスを製造する際、ウェハープロセスにおい
てはりソグラフィ技術が汎用されており、その際、ウェ
ハーにレジスト膜パターンを形成するためのレジスト膜
塗布がおこなわれるが、その塗布装置および塗布工程に
関している。When manufacturing semiconductor devices, beam lithography technology is widely used in the wafer process, and at that time, a resist film is applied to form a resist film pattern on the wafer, and the present invention relates to a coating apparatus and a coating process.
第２図は従来のレジスト塗布装置の要部概要図を示して
おり、記号１はウェハー（被塗布基板）。FIG. 2 shows a schematic diagram of the main parts of a conventional resist coating apparatus, and symbol 1 indicates a wafer (substrate to be coated).
２はスピンチャック（回転保持台）、３は外囲器（カッ
プ）、４は滴下ノズル、５は廃液排出口である。2 is a spin chuck (rotating holding table), 3 is an envelope (cup), 4 is a dripping nozzle, and 5 is a waste liquid outlet.
ウェハーにレジスト膜を被覆するためのレジスト膜塗布
には、第２図のような回転式塗布装置（スピンコーター
； ５ｐｉｎ ｃｏａｔｅｒ）が用いられており、その
ような回転式塗布方法はレジスト膜をウェハー面に均一
に塗布し易いからである。A rotary coating device (spin coater; 5-pin coater) as shown in Figure 2 is used to coat a resist film on a wafer. Such a rotary coating method coats a resist film onto a wafer. This is because it is easy to apply uniformly to the surface.
その操作はウェハー１を真空チャック方式でスピンチャ
ック２に吸着保持させた後、スピンチャック２をゆっく
り回転させながら所要量のレジスト液を滴下ノズル４か
らウェハー１面に滴下する。In this operation, the wafer 1 is suctioned and held on the spin chuck 2 using a vacuum chuck method, and then a required amount of resist liquid is dropped onto the surface of the wafer 1 from the dropping nozzle 4 while slowly rotating the spin chuck 2.
次いで、回転速度を高めてレジスト液をウェハーｌ全面
に均一な厚さに拡散させる。その最高回転速度は数千ｒ
ｐ＋ｎに達し、回転所要時間は１０秒程度になる。Next, the rotation speed is increased to spread the resist solution over the entire surface of the wafer l to a uniform thickness. Its maximum rotation speed is several thousand r
p+n is reached, and the required rotation time is about 10 seconds.
ところが、レジスト液を滴下して高速回転させると、余
分のレジスト液がウェハーｌより側方に振り飛ばされ、
それが廃液排出口５より排出されるが、その際、振り飛
ばされたレジスト液が外囲器３に当たって跳ね返り、ウ
ェハー裏面に付着するという問題が生じる。However, when the resist solution is dropped and rotated at high speed, the excess resist solution is thrown off to the side of the wafer l.
The resist liquid is discharged from the waste liquid discharge port 5, but at this time, a problem arises in that the thrown-off resist liquid hits the envelope 3 and rebounds, adhering to the back surface of the wafer.
しかし、そのようにして、ウェハー裏面にレジスト液が
付着すると、次工程において露光装置（ステッパーやア
ライナ−など）のウェハーステージ（ウェハー載置台）
にウェハーを載置した時、ウェハーが平行にならずにや
や傾斜して、そのため、露光時に焦点ボケなどを起こし
、高精度にパターンニングできなくなる。これは半導体
デバイスの品質を低下させる重要な問題点である。However, if the resist solution adheres to the back surface of the wafer in this way, the wafer stage (wafer mounting table) of the exposure equipment (stepper, aligner, etc.)
When a wafer is placed on the wafer, the wafer is not parallel but slightly tilted, which causes out-of-focus during exposure, making it impossible to pattern with high precision. This is an important problem that degrades the quality of semiconductor devices.
また、ウェハー裏面に付着したレジスト液が固化する前
に、ウェハーカセットや加熱処理装置などに再付着して
、それがやがてはウェハー表面を汚染する欠点がある。Another disadvantage is that the resist solution adhering to the back surface of the wafer re-adheres to the wafer cassette, heat treatment equipment, etc. before it solidifies, and eventually contaminates the wafer surface.
そのため、最近、レジスト塗布装置においては洗浄ノズ
ルによってウェハー裏面を洗浄する方法が採られている
が、従来の洗浄ノズルは固定式であるために、その固定
式ではウェハー裏面のレジスト液を完全に払拭すること
はできない。Therefore, recently, resist coating equipment has adopted a method of cleaning the back side of the wafer using a cleaning nozzle, but since the conventional cleaning nozzle is a fixed type, the fixed type completely wipes off the resist liquid on the back side of the wafer. I can't.
本発明はそのような問題点を解消させ、ウェハー裏面か
らレジスト液を完全に払拭することを目的としたレジス
ト塗布装置を提案するものである。The present invention solves such problems and proposes a resist coating device for the purpose of completely wiping off the resist liquid from the back surface of a wafer.
その課題は、第１図に示すように、ウニバーの表面にレ
ジスト溶液を滴下する滴下ノズル４と、該ウェハーの裏
面で該ウェハーを保持して回転するスピンチャック２と
、線状に移動して該ウェハーの裏面に洗浄液を噴き付け
る洗浄ノズル１１とを備えているレジスト塗布装置によ
って解決される。As shown in Fig. 1, the problem is that the drip nozzle 4 that drips the resist solution onto the surface of the unibar, the spin chuck 2 that rotates while holding the wafer on the back side of the wafer, and the spin chuck 2 that moves linearly. This problem is solved by a resist coating device equipped with a cleaning nozzle 11 that sprays cleaning liquid onto the back surface of the wafer.
また、そのレジスト塗布装置は、ウェハー表面を回転さ
せる工程と、該ウェハー表面にレジスト溶液を滴下する
工程と、該ウェハー裏面に向がって洗浄液を洗浄ノズル
より噴射させて、回転する該ウェハー裏面を洗浄する工
程が含まれていることを特徴とする。In addition, the resist coating apparatus includes a step of rotating the wafer surface, a step of dropping a resist solution onto the wafer surface, and a step of spraying a cleaning liquid from a cleaning nozzle toward the wafer back surface. It is characterized by including a step of washing.
Ｃ作 用〕
即ち、本発明は、レジスト塗布装置に可動式洗浄ノズル
を設け、ウェハーへのレジスト液塗布がほぼ完了した後
に、その可動する洗浄ノズルより洗浄液を噴出させてウ
ェハー裏面を洗浄する。C Effect] That is, in the present invention, a movable cleaning nozzle is provided in the resist coating device, and after the application of the resist solution to the wafer is almost completed, the cleaning solution is ejected from the movable cleaning nozzle to clean the back surface of the wafer.
そうすれば、ウェハー裏面よりレジスト液を完全に除去
できて、フォトプロセスにおいて高精度なレジスト膜パ
ターンが形成できる。In this way, the resist solution can be completely removed from the back surface of the wafer, and a highly accurate resist film pattern can be formed in the photo process.
［実 施 例］
以下、図面を参照しながら実施例によって詳細に説明す
る。[Examples] Hereinafter, examples will be described in detail with reference to the drawings.
第１図は本発明にかかるレジスト塗布装置の要部概要図
を示しており、記号１はウェハー、２はスピンチャック
３は外囲器、４は滴下ノズル。FIG. 1 shows a schematic diagram of the main parts of the resist coating apparatus according to the present invention, in which symbol 1 is a wafer, 2 is a spin chuck, 3 is an envelope, and 4 is a dropping nozzle.
５は廃液排出口、１１は駆動ステージ１０に取付けた洗
浄ノズルである。スピンチャック２はウェハーを吸着（
チャッキング）して、その回転数はゆっくりした回転か
ら約４０００ｒｐｍ程度の高速回転まで調整できる。5 is a waste liquid discharge port, and 11 is a cleaning nozzle attached to the drive stage 10. Spin chuck 2 attracts the wafer (
The rotation speed can be adjusted from slow rotation to high speed rotation of about 4000 rpm.
また、駆動ステージ１０は外囲器３の外側部に位置して
電動機（図示せず）で可動するステージであり、外囲器
３に対して近づいたり離れたりしてリニアに動作する。Further, the driving stage 10 is a stage located outside the envelope 3 and movable by an electric motor (not shown), and moves linearly toward and away from the envelope 3.
その駆動ステージ１０に洗浄ノズル１１が取付けられて
おり、上向きのノズル先端Ｔがスピンチャック２の側部
上方に位置しているために、駆動ステージ１０が動作す
ると、リニアにスピンチャックに近づいたり離れたりし
て移動する。そして、ウェハー１を回転させておくと、
ウェハー裏面の全面を洗浄ノズル１１から噴出させる洗
浄液で洗浄することができる。A cleaning nozzle 11 is attached to the drive stage 10, and the upward nozzle tip T is located above the side of the spin chuck 2, so when the drive stage 10 operates, it linearly approaches and moves away from the spin chuck. or move around. Then, when wafer 1 is rotated,
The entire back surface of the wafer can be cleaned with the cleaning liquid jetted from the cleaning nozzle 11.
このような構造にして、例えば口径８インチφのウェハ
ー１をスピンチャック２にチャッキングさせる。そうす
ると、直径１０ＩＩＩＩＩｌφのチャツキング面をもっ
たスピンチャック２からはウェハー裏面の周囲幅５０ｍ
ｍ程度が露出する。また、口径６インチφのウェハー裏
面からは周囲幅２５ｍｍ程度が露出する。従って、スピ
ンチャック２によってウェハーを回転させて、ウェハー
裏面に洗浄ノズル１１から洗浄液を吹き付けると、ウェ
ハー裏面に付着したレジスト液は完全に除去される。With such a structure, a wafer 1 having a diameter of, for example, 8 inches φ is chucked by the spin chuck 2. Then, from the spin chuck 2, which has a chucking surface with a diameter of 10III1φ, the circumferential width of the back surface of the wafer is 50 m.
About m is exposed. Further, from the back side of the wafer having a diameter of 6 inches φ, a peripheral width of about 25 mm is exposed. Therefore, when the wafer is rotated by the spin chuck 2 and the cleaning liquid is sprayed from the cleaning nozzle 11 onto the backside of the wafer, the resist liquid adhering to the backside of the wafer is completely removed.
次に、本発明にかかるレジスト塗布方法を説明する。Next, a resist coating method according to the present invention will be explained.
■チャッキング；ウェハー１をスピンチャック２に真空
吸着させる。■Chucking: Vacuum suction of wafer 1 to spin chuck 2.
■初期回転；レジスト液を滴下することなく、スピンチ
ャック２を高速に回転させ、次に、ゆっくりした低速回
転に移る。この高速回転は外囲器３内の空気を回転させ
て、レジスト液の滴下時に空気抵抗を減少させるためで
ある。(2) Initial rotation: The spin chuck 2 is rotated at high speed without dropping the resist solution, and then the spin chuck 2 is rotated at a slow speed. The purpose of this high-speed rotation is to rotate the air within the envelope 3 and reduce air resistance when the resist liquid is dropped.
■レジスト液滴下；次に、低速回転中にレジスト液を滴
下して、次第に高速回転に移る。(2) Dropping of resist liquid: Next, drop the resist liquid while rotating at low speed, and gradually move to high speed rotation.
■ウェハー裏面洗浄；次に、高速回転から低速になると
、駆動ステージ１０を動作させて、洗浄ノズル１１をリ
ニアに移動しながら洗浄ノズル１１の先端Ｔから洗浄液
を噴出させてウェハー裏面を洗浄する。この洗浄液はレ
ジストの溶剤が適当であって、例えば、酢酸ブチルやエ
チルセルソルブアセテートなどを用いる。(2) Cleaning the back side of the wafer; Next, when the rotation speed changes from high speed to low speed, the drive stage 10 is operated to move the cleaning nozzle 11 linearly and eject cleaning liquid from the tip T of the cleaning nozzle 11 to clean the back side of the wafer. This cleaning solution is suitably a resist solvent, such as butyl acetate or ethyl cellosolve acetate.
上記のような本発明にかかるレジスト塗布装置を用いて
、本発明にかかるレジスト塗布方法を実施すればウェハ
ー裏面へのレジスト液付着は解消できる。By implementing the resist coating method according to the present invention using the resist coating apparatus according to the present invention as described above, adhesion of the resist liquid to the back surface of the wafer can be eliminated.
なお、上記例は１個の滴下ノズルをウェハーの中央上部
にのみ位置させたレジスト塗布装置の例で説明したが、
数個の液滴下ノズルをウェハー上部の数点に配置する装
置も知られており、そのような数個の滴下ノズルを設け
たレジスト塗布装置にも本発明を適用できることはいう
までもない。Note that the above example was explained as an example of a resist coating apparatus in which one dropping nozzle was located only at the upper center of the wafer.
An apparatus in which several droplet nozzles are arranged at several points on the top of a wafer is also known, and it goes without saying that the present invention can also be applied to a resist coating apparatus provided with such several droplet nozzles.
以上の説明から明らかなように本発明によればウェハー
裏面の露出全面を洗浄できるために、レジスト液の付着
を解消させることができ、その結果、高精度パターンを
形成できて、ＩＣ，ＬＳＩなど半導体デバイスの品質の
向上に大きく寄与するものである。As is clear from the above explanation, according to the present invention, since the entire exposed surface of the back surface of the wafer can be cleaned, the adhesion of resist liquid can be eliminated, and as a result, highly accurate patterns can be formed, and ICs, LSIs, etc. This greatly contributes to improving the quality of semiconductor devices.
第１図は本発明にかかるレジスト塗布装置の要部概要図
、
第２図は従来のレジスト塗布装置の要部概要図である。
図において、
１はウェハー ２はスピンチャック、３は外囲
器、 ４は滴下ノズル、５は廃液排出口、
１０は駆動ステージ、１１は洗浄ノズル、 Ｔ
はノズル先端を示している。FIG. 1 is a schematic diagram of main parts of a resist coating apparatus according to the present invention, and FIG. 2 is a schematic diagram of main parts of a conventional resist coating apparatus. In the figure, 1 is a wafer, 2 is a spin chuck, 3 is an envelope, 4 is a dripping nozzle, 5 is a waste liquid outlet,
10 is a drive stage, 11 is a cleaning nozzle, T
indicates the nozzle tip.
Claims (2)
ズルと、 該ウェハーの裏面で該ウェハーを保持して回転するスピ
ンチャックと、 線状に移動して該ウェハーの裏面に洗浄液を噴き付ける
洗浄ノズルとを備えてなることを特徴とするレジスト塗
布装置。(1) A dripping nozzle that drips resist solution onto the surface of the wafer, a spin chuck that rotates while holding the wafer on the backside of the wafer, and a cleaning nozzle that moves linearly and sprays cleaning liquid onto the backside of the wafer. A resist coating device comprising:
ェハー裏面に向かって洗浄液を洗浄ノズルより噴射させ
て、回転する該ウェハー裏面を洗浄する工程が含まれて
なることを特徴とするレジスト塗布方法。(2) The process includes a step of rotating the wafer surface, a step of dropping a resist solution onto the wafer surface, and a step of spraying a cleaning liquid toward the wafer back surface from a cleaning nozzle to clean the rotating wafer back surface. A resist coating method characterized by the following characteristics:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11909090A JPH0414813A (en) | 1990-05-08 | 1990-05-08 | Apparatus and method for resist coating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11909090A JPH0414813A (en) | 1990-05-08 | 1990-05-08 | Apparatus and method for resist coating |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0414813A true JPH0414813A (en) | 1992-01-20 |
Family
ID=14752649
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11909090A Pending JPH0414813A (en) | 1990-05-08 | 1990-05-08 | Apparatus and method for resist coating |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0414813A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6395086B1 (en) * | 1993-04-08 | 2002-05-28 | Chartered Semiconductor Manufacturing Pte Ltd | Shield for wafer station |
| JP2017098295A (en) * | 2015-11-18 | 2017-06-01 | トヨタ自動車株式会社 | Manufacturing apparatus and manufacturing method of semiconductor device |
-
1990
- 1990-05-08 JP JP11909090A patent/JPH0414813A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6395086B1 (en) * | 1993-04-08 | 2002-05-28 | Chartered Semiconductor Manufacturing Pte Ltd | Shield for wafer station |
| JP2017098295A (en) * | 2015-11-18 | 2017-06-01 | トヨタ自動車株式会社 | Manufacturing apparatus and manufacturing method of semiconductor device |
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