JPH08168715A - Rotary coating device and method thereof - Google Patents

Abstract

PURPOSE: To keep the discharge of a treating liquid to an irreducible minimum to average the liquid quantity on a substrate. CONSTITUTION: A circular wafer 11 is attracted to a low speed rotation chuck 12 over the whole surface and is made flat, and while a treating liquid is discharged onto the surface of the wafer from a slit nozzle 14 whose length is almost equal to the diameter of the wafer 11, the wafer 11 is rotated at a low speed. After that, the wafer 11 is conveyed to a high speed rotation chuck 16 to rotate it at high speed to shake off excess treating liquid by centrifugal force, permitting a desired film thickness to be obtained. Therefore, with the slit nozzle 14 being brought close to the wafer 11 to the utmost, the treating liquid is fed to reduce the quantity of the treating liquid to be used.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION This invention relates to, for example, ICs and LSs.
In the step of forming a fine pattern in the manufacturing process of electronic parts such as liquid crystal display devices, a photoresist solution or the like is supplied to a semiconductor substrate typified by a silicon wafer or a substrate such as a dielectric, metal, or insulator. The present invention relates to a rotary coating device such as a spin coater and a rotary coating method for coating by rotating.

[0002]

[Prior art]

{First Conventional Example} In the first conventional rotary coating apparatus, as shown in FIG. 6, the wafer 1 is stationary or rotated at a low speed as shown in FIG. 7 at the center of the horizontally supported wafer 1. In this state, the resist liquid 3 (photoresist) is discharged from the nozzle 2,
After that, the wafer 1 is rotated at a high speed as shown in FIG. 8 to apply the resist solution 3 onto the substrate surface.
Reference numeral 4 in FIGS. 6, 7 and 8 denotes a rotation support portion that rotates by fixing the central portion of the wafer 1 by suction, and reference numeral 5 in FIG. 6 denotes a chamber.

{Second Conventional Example} As a second conventional rotary coating apparatus, there is, for example, a resist coating apparatus disclosed in Japanese Patent Application Laid-Open No. 58-170565. Figure 9
[Fig. 3] is a view for explaining the structure of this device. In the second conventional rotary coating apparatus, a circular wafer 1 is horizontally placed on a support base and the central portion thereof is suction-fixed, and the wafer 1 is centered on a central axis (vertical axis) together with the support base. The slit-shaped discharge port 6a is formed on the surface of the wafer 1 while rotating at low speed.
The resist solution 3 (photoresist) is dripped in a band shape from the nozzle 6 in which the mark is formed. Next, after the dropping of the resist solution 3 is completed, the wafer 1 is rotated at high speed around the central axis (vertical axis) together with the support table, and the resist solution 3 is spread on the surface of the wafer 1 by centrifugal force to form a thin film. Form.

[0004]

[Problems to be Solved by the Invention]

{Problem of First Conventional Example} In the first conventional example, the wafer 1 is rotated at a relatively low speed to spread the resist solution 3 discharged onto the central portion of the wafer 1 on the entire surface thereof, and then the wafer 1 Is rotated at a relatively high speed to shake off excess resist solution 3 to form a thin film of resist solution 3 having a desired thickness.
According to this apparatus, the applied thin film has relatively good film thickness uniformity. However, in this apparatus, a relatively large amount of resist solution 3 must be supplied in order to spread the resist solution 3 on the entire surface of the wafer 1 by rotation, and the resist solution 3 that is wasted at the stage of spreading is produced. Since the surplus resist liquid 3 is shaken off from there, the ratio of the resist liquid 3 that is effectively used becomes very small. In this case, several tens of times as much resist liquid 3 (resist amount remaining on the wafer 1 after high-speed rotation) as necessary to apply the resist liquid 3 to a predetermined thickness (for example, several μm) is discharged from the nozzle. Need to supply.
That is, 90% of the resist liquid 3 supplied from the nozzle
As described above, since the material is scattered around the wafer 1 by the high speed rotation, the material corresponding to that is wasted.

{Problem of Second Conventional Example} In the second conventional example, the resist liquid 3 supplied to the surface of the wafer 1 is
Since it is already spread over almost the entire surface,
The waste of the resist solution 3 at the stage of spreading the resist solution 3 on the entire surface of the wafer 1 can be made relatively small. Then, in this conventional example, in order to further reduce the amount of the resist solution 3 used, at the stage of supplying the resist solution 3 to the wafer 1, the thickness as close to the final desired film thickness as possible (for example, several tens of μm) It is desirable to supply the resist solution 3 in step (4). For that purpose, it is necessary to bring the wafer 1 and the slit-shaped discharge port 6a of the nozzle 6 as close as possible (for example, several tens of μm). In this case, in order to keep the distance between the wafer 1 and the slit-shaped discharge port 6a of the nozzle 6 substantially constant, it is necessary to ensure the flatness of the wafer 1. However, in the conventional spin coating apparatus, since the wafer 1 is adsorbed and fixed on the support base only at the central portion, the wafer 1 may warp or bend due to its own weight due to the heat treatment performed up to that time. In that case, it was difficult to secure the flatness of the wafer 1. Specifically, since the warp and the warp of the wafer 1 reach several hundreds μm at the maximum (for example, the warp of a wafer having a diameter of 8 inches is 150 μm), it is difficult to bring the nozzle 6 close to several tens of μm. Become. In such a situation, in order to uniformly discharge the resist liquid 3 onto the wafer 1, it is necessary to set the discharge amount of the resist liquid 3 to be considerably larger than the necessary minimum amount, which causes an increase in material cost. .

In view of the above problems, the present invention provides a rotary coating apparatus and a rotary coating method capable of further reducing the amount of processing liquid required and having good uniformity of film thickness on a substrate. With the goal.

[0007]

According to a first aspect of the present invention, there is provided a rotary coating apparatus for coating a surface of a substantially circular substrate by supplying a treatment liquid and rotating the substrate to coat the substrate. A first substrate supporting means for adsorbing and supporting substantially the entire back surface of the substrate, and a length substantially equal to or slightly shorter than the diameter of the front surface of the substrate supported by the first substrate supporting means. A processing liquid supply unit that linearly discharges the processing liquid; a first rotation unit that rotates at least one of the first substrate support unit and the processing liquid supply unit at a predetermined low speed with respect to the other; Second substrate supporting means for adsorbing and supporting only the central portion of the back surface of the substrate, and rotating the second substrate supporting means at a predetermined high speed so as to smooth the processing liquid on the substrate by centrifugal force. Second rotating means and the processing liquid supply means Comprises from the following of the treatment liquid ejection first substrate supporting means and the conveying means for conveying the substrate to the second substrate support means.

The problem solving means according to claim 2 of the present invention is
In a rotary coating method for supplying a treatment liquid to the surface of a substantially circular substrate and rotating the substrate to apply the treatment liquid, the treatment liquid supply means is provided with the back surface of the substrate substantially adsorbed to the first substrate supporting means. A process liquid discharge step of discharging at least one of the substrate and the process liquid supply unit at a predetermined low speed with respect to the other while discharging the process liquid linearly along the diameter of the substrate to the surface of the substrate by A transport step of transporting the substrate from the first substrate supporting means to the second substrate supporting means after the completion of discharge of the processing liquid from the processing liquid supply means, and a substrate by the second substrate supporting means. A high-speed rotation step of rotating the second substrate supporting means at a predetermined high speed so that the processing liquid on the substrate is smoothed by centrifugal force with only the central portion of the back surface of the substrate being adsorbed and supported. Prepare

[0009]

In the rotary coating apparatus according to claim 1 of the present invention and the rotary coating method according to claim 2, the back surface of the substrate is substantially entirely sucked by the first substrate supporting means to support the substrate flatly and to rotate at a low speed. The substrate is rotated, and in this state, the treatment liquid is discharged linearly from the treatment liquid supply means onto the surface of the substrate along the diameter thereof, and the treatment liquid is supplied to almost the entire surface of the substrate. Even if the substrate warps or bends, the back surface of the substrate is almost entirely adsorbed, so that the influence of the warp or bending can be reduced, and the treatment liquid supply unit can be brought as close to the substrate as possible. Therefore, the treatment liquid is supplied to the substrate surface in a relatively thin and uniform state, and the discharge amount of the treatment liquid is reduced.

After the processing liquid is supplied to the substrate, the substrate is conveyed to the second substrate supporting means, and when the processing liquid is shaken off, only the central portion of the back surface of the substrate is adsorbed and supported to rotate at a high speed. The treatment liquid is less likely to be contaminated by the treatment liquid entering between the substrate support means and the substrate by a capillary phenomenon, or the mist (fog) of the treatment liquid adhering to the substrate support means.

[0011]

【Example】

{First Embodiment} <Structure> FIG. 1 is a schematic view showing a rotary coating apparatus according to a first embodiment of the present invention, and FIG. 2 is a plan view showing the rotary coating apparatus according to the present embodiment. As shown in FIGS. 1 and 2, the rotary coating apparatus includes a rotating semiconductor circular wafer 11 (substrate).
Photoresist (treatment liquid) is supplied and applied on the surface of
A thin film of photoresist is formed on the surface of the circular wafer 11.

In FIG. 1 and FIG. 2, reference numeral 12 denotes a first spin chuck (first substrate supporting means: whole surface adsorption stage) which adsorbs and supports the back surface of the circular wafer 11 with its front surface facing upward. , 13 are the first spin chuck 12
Is a first motor (first rotating means) for rotating at about a vertical axis at a predetermined low speed, and 14 is a photoresist which is supported by the first spin chuck 12 and is directed toward the surface of the circular wafer 11 rotating at a low speed. Slit nozzle 14 for supplying
(Processing liquid supply means), 15 is a slit-shaped processing liquid discharge port (hereinafter, simply referred to as a slit) formed on the lower surface of the slit nozzle 14, and 16 is the first spin chuck 12.
A second spin chuck (second substrate supporting means: spin processing section) which is arranged side by side and adsorbs and supports only the central portion of the circular wafer 11, and 17 denotes the second spin chuck 16. The second motors 17 (second rotating means), which rotate at a predetermined high speed around the vertical axis, are the first spin chuck 12 to the second spin chuck 18 after the processing liquid is discharged from the slit nozzle 14. 16 is a transfer arm of a transfer robot 19 (transfer means) for transferring the circular wafer 11 to 16.

The first spin chuck 12 has a full-surface vacuum suction system formed to have a diameter larger than that of the circular wafer 11 in order to prevent warping and bending of the supporting circular wafer 11 and ensure its flatness with high accuracy. The thing of is adopted. Here, in the case of such a full surface vacuum suction type chuck, almost the entire back surface of the circular wafer 11 is the first spin chuck 12
Therefore, if the first spin chuck 12 is also used for high-speed rotation, the mist (fog) of the processing liquid will be generated when the processing liquid is shaken off by the high-speed rotation. There is a possibility that the spin chuck itself may be contaminated due to capillary action or the like between the chuck upper surface and the wafer back surface, or the mist may adhere to the entire back surface of the circular wafer 11 and contaminate it. Such a situation is extremely undesirable in terms of product management. Therefore, the first spin chuck 12 is used only when the processing liquid is discharged by the slit nozzle 14 (during low speed rotation).

When the circular wafer 11 is transferred,
It is necessary to rotate the transfer arm 18 onto the back surface of the circular wafer 11 and transfer the transfer arm 18 while supporting it. However, since the first spin chuck 12 closely adheres to and covers the entire back surface of the circular wafer 11, it remains as it is. Then, the transfer arm 18 cannot be placed on the back surface of the circular wafer 11.
That is, in order to rotate the transfer arm 18 to the rear surface of the circular wafer 11, the circular wafer 11 is floated upward and the rear surface of the circular wafer 11 is moved to the first spin chuck 12.
Need to be separated from. Therefore, as shown in FIG. 1, a wafer lifting device 22 for lifting the circular wafer 11 from the upper surface of the first spin chuck 12 is provided. That is, the wafer supporting area of the first spin chuck 12 is set at several positions (3
Through holes 20 are formed in more than one place), and the support rod 21 of the wafer raising device 22 is inserted into each through hole 20 (see the dotted line portion in FIG. 1) to support the circular wafer 11, The circular wafer 11 is raised. The wafer raising device 22 includes, for example, a motor, a pinion, a rack, etc. (not shown), and is drive-controlled in conjunction with the operation of the transfer arm 18.

As shown in FIG. 1, the first motor 13 causes the first spin chuck 12 to move at a low speed with respect to the slit nozzle 14 about the vertical axis when the processing liquid is discharged by the slit nozzle 14. It is rotated, and the rotation speed is about 10 to 50 rpm, preferably 20 to 30 rp
It is about m.

The slit nozzle 14 is supported by a predetermined support (not shown) in a horizontal position and in a vertically movable manner. The length of the slit 15 of the slit nozzle 14 (hereinafter abbreviated as nozzle length) is set to be substantially equal to the diameter of the circular wafer 11 to be processed, as shown in FIG. The slit nozzle 14 is arranged such that the center of the slit 15 is located above the center of rotation of the circular wafer 11 supported by the first spin chuck 12, and the first motor 13 drives the slit nozzle 14. The photoresist is linearly ejected onto the region corresponding to the diameter of the circular wafer 11 while rotating at a low speed, thereby ejecting the photoresist onto the almost entire region of the circular wafer 11. However, in practice, it is desirable that the nozzle length is set to be slightly shorter than the diameter of the circular wafer 11. Thus, the reason why the nozzle length is made slightly shorter than the diameter is that it is not necessary to apply the resist to the peripheral edge portion of the circular wafer 11, so that the conveying means of the circular wafer 11 is prevented from being contaminated with the resist. It can be prevented. Then, as shown in FIG. 1, the slit nozzle 14 is lowered and is arranged at a predetermined height position with respect to the first spin chuck 12, so that the slit 15 of the slit nozzle 14 and the surface of the circular wafer 11 are formed. The separation distance (δ) between and is set to, for example, about 30 to 100 μm. Thus, the supply of the photoresist to the circular wafer 11 by the slit nozzle 14 is performed with the target thickness of the photoresist after the supply being approximately the same as the separation distance (δ) (about 30 to 100 μm). The required supply of photoresist for that purpose is 8 diameters.
In the case of an inch circular wafer 11, it is about 1 to 3 ml.

The rotation of the above-mentioned first spin chuck 12 is for scanning the slit 15 of the slit nozzle 14 over substantially the entire surface of the circular wafer 11 and spreading and supplying the photoresist over almost the entire surface of the circular wafer 11. The rotation speed is set to a low speed such that the supplied photoresist does not flow outward from the edge of the circular wafer 11 due to centrifugal force.

The second spin chuck 16 is rotated at a high speed for the purpose of shaking off, and when the processing liquid is shaken off, a mist (fog) of the processing liquid is generated between the upper surface of the chuck and the back surface of the wafer due to a capillary phenomenon or the like. The contact area with the circular wafer 11 is set to be as small as possible in order to reduce the situation of going around as much as possible. That is, the second spin chuck 16
As shown in FIG. 1 and FIG.
1 is adsorbed and supported. The second spin chuck 16 is housed in a drain chamber 25 for discharging drainage when the processing liquid is shaken off.

As shown in FIG. 1, the second motor 17 rotates at a high speed around a vertical axis, and the processing liquid discharged onto the surface of the circular wafer 11 is spun off by a centrifugal force and leveled. The film thickness of the treatment liquid is smoothed or leveled to a desired dimension (target dimension is, for example, about 1 μm).
The rotation speed is, for example, about 2,000 to 6,000 rpm,
Desirably, it is set to about 3,000 to 5,000 rpm.

Although not shown, the first spin chuck 12 and the second spin chuck 16 are provided with an intake passage for sucking and supporting the circular wafer 11.

As shown in FIG. 4, the transfer robot 19 has a base 19a to which a transfer arm 18 is attached. The base part 19a has a drive mechanism for moving the transfer arm 18 forward and backward, and the transfer arm 18 has a base part 19a.
It is attached so that it can move back and forth in the horizontal (Y) direction. Further, the base portion 19a has a moving mechanism capable of moving in the (X) direction orthogonal to the (Y) direction in the horizontal plane, and as shown in FIG. 2, the first spin chuck 12 and the second spin chuck 12 are connected to each other. It is provided so as to move along with the spin chuck 16. As a result, the transfer arm 18 horizontally connects (X) the transfer position P1 adjacent to the first spin chuck 12 and the transfer position P2 adjacent to the second spin chuck 16, as shown in the plan view of FIG. It is movable in the horizontal direction (Y) connecting the transport position P1 and the delivery position P3, and the transport position P2 and the delivery position P4. Due to such movement, the transfer robot 19 causes a heat treatment unit such as a hot plate or a cool plate (not shown), a wafer supply unit (indexer) or another processing unit, the first spin chuck 12, the second spin chuck 16, and the like. The circular wafer 11 is transported and supplied between
Carry out the operation. In addition, reference numeral 26 in FIG. 2 denotes a support claw for mounting and supporting the circular wafer 11 on the transfer arm 18.

<Operation> The operation of the rotary coating apparatus having the above-described structure and the method of the present invention using the apparatus will be described with reference to FIG. First, the transfer robot 19 supplies the circular wafer 11 to the first spin chuck 12 (entire surface adsorption stage) from a pretreatment unit (not shown) such as heat treatment (step S).
1). Then, the back surface of the circular wafer 11 is vacuum-sucked on the entire surface of the first spin chuck 12 to correct the warp and bending of the circular wafer 11 (step S2), and the diameter of the circular wafer 11 is almost covered on the surface of the circular wafer 11. The slit nozzles 14 are arranged close to each other (step S3). At this time, as shown in FIG. 1, the separation distance (δ) between the circular wafer 11 and the nozzle is set to a small value of about 30 to 100 μm.

Next, the circular wafer 11 is rotated at a low speed (step S4), and the photoresist is linearly ejected from the slit nozzle 14 along the diameter of the circular wafer 11 (treatment liquid ejection step: step S5) to form a circle. A photoresist is applied to almost the entire surface of the wafer 11. The rotation speed at this time is about 10 to 50 rpm, preferably 20 to 3
It is about 0 rpm. At this time, as shown in FIG. 1, the separation distance (δ) between the circular wafer 11 and the nozzle is 30 to 100 μm.
The processing liquid is 30 to 100 because it is set to a small value.
It can be applied as thin as about μm and the unevenness of the application can be significantly reduced. Since the nozzle length of the slit nozzle 14 is set to be slightly shorter than the diameter, it is possible to prevent the situation where the resist is applied to the peripheral portion of the circular wafer 11 and the circular wafer 1
It is possible to prevent the transfer arm 18 of the first transfer robot 19 from being contaminated with the resist. Here, since the photoresist is discharged linearly along the diameter of the circular wafer 11, the resist can be applied to the entire surface of the circular wafer 11 by rotating the circular wafer 11 half a while discharging the photoresist (step S6). . When the circular wafer 11 makes a half rotation, the rotation and the discharge of the photoresist are stopped. In addition,
At this stage, the thickness uniformity of the applied photoresist is not very necessary.

In this way, the circular wafer 11 is adsorbed and supported on the entire surface by the first spin chuck 12 to ensure the flatness of the circular wafer 11, so that the circular wafer 11 and the slit of the nozzle are as close to each other as possible. (A few tens of μm), and therefore, the amount of liquid ejected onto the wafer can be leveled to a thickness of several μm while reducing the amount of photoresist discharged as much as possible.

After that, the slit nozzle 14 is lifted up and retracted, and the circular wafer 11 is transferred by the transfer robot 19 to the second spin chuck 16 (spin processing unit) provided in parallel with the first spin chuck 12. (Conveying process: Step S
7) A high-speed rotation is performed to obtain a resist film having a desired thickness and a uniform film thickness (high-speed rotation step: step S8). The rotation speed is about 2,000 to 6,000 rpm, preferably about 3,000 to 5,000 rpm. here,
By rotating at a high speed, a resist film having a thickness uniformity of about several μm is formed. After that, the circular wafer 11 after processing is carried out by the transfer robot 19 toward the processing section of the subsequent process.

As described above, since the circular wafer 11 is supported extremely flat by the whole surface suction at the time of low speed rotation, the slit nozzle 14 can be as close to the surface of the circular wafer 11 as possible. Therefore, even if the discharge amount of the processing liquid from the slit nozzle 14 is set to the minimum, the processing liquid can be uniformly applied to the entire surface of the circular wafer 11.

Further, since the first spin chuck 12 for adsorbing the whole surface is used only at low speed rotation, and at the time of high speed rotation, the second spin chuck 16 adsorbs only at the central portion, so that the processing liquid is shaken off. Further, by making the contact area between the chuck and the wafer small, it is possible to reduce the situation in which the mist (fog) of the processing liquid wraps around between the upper surface of the chuck and the back surface of the circular wafer 11 due to a capillary phenomenon or the like.

As the slit nozzle, it is possible to use a slit nozzle that discharges the treatment liquid in a linear shape having a length substantially equal to or slightly shorter than the radius of the substrate. In that case, FIG. 3 (b)
The slit nozzle is arranged so as to discharge the processing liquid from the center of the substrate along its radius as shown in FIG. 3, and after discharging the processing liquid, the substrate is conveyed to the second substrate supporting means and rotated at high speed. The operation of shaking off the excess processing liquid is performed. Even with such a configuration, the amount of the processing liquid used can be reduced, and contamination of the substrate and the substrate supporting means can be prevented. But in this case,
In order to supply the processing liquid from the slit nozzles to the entire surface of the substrate, the substrate and the slit nozzles have to be relatively rotated once, and it takes a relatively long time to supply the processing liquid, and the processing that is initially ejected. It is conceivable that there is a difference between the liquid and the treatment liquid discharged in the latter period due to the volatilization state of the solvent component of the treatment liquid and the like, so that the film thickness after the excess treatment liquid is shaken off due to the high speed rotation may not be uniform. On the other hand, in the case of FIG. 3A, in which the supply of the processing liquid only requires a half rotation, the supply of the processing liquid is completed in a relatively short time, so that such inconvenience does not occur.

{Modification} (1) In the above embodiments, the case where a circular wafer is used as a substrate has been described, but the present invention is not limited to this, and for example, a semiconductor having an orientation flat or a notch is formed. It may be a substantially circular substrate such as a wafer. For example, in the case of a semiconductor wafer on which an orientation flat is formed, the slit 15 of the slit nozzle 14 has a slit 15 so that the discharged photoresist does not fall on the orientation flat.
It is desirable to reduce the size of the. This is to prevent the photoresist from adhering to the first spin chuck 12 and the like. Further, the processing liquid supply means is not limited to the one using the slits as in the above-mentioned embodiment, and for example, a large number of small processing liquid discharge ports are arranged in a straight line so that the processing liquid is supplied substantially linearly along the diameter of the substrate. A resist may be discharged.

(2) In the above embodiment, the slit nozzle 14 is fixed and only the first spin chuck 12 is rotated. However, the first spin chuck 12 is fixed and only the slit nozzle 14 is rotated. Well, first,
Both the spin chuck 12 and the slit nozzle 14 may be rotated in opposite directions.

[0031]

According to the first and second aspects of the present invention, the substrate is flatly supported by the whole surface adsorption at the low speed rotation, and the processing liquid is discharged from the processing liquid supply means in such a state. Even when the substrate is warped or bent, the processing liquid supply means can be brought as close as possible to the surface of the substrate after the substrate is flattened by the whole surface adsorption. Therefore, the liquid can be discharged without waste, the discharge amount of the processing liquid from the processing liquid supply means can be reduced, and
The treatment liquid can be evenly applied to the entire surface of the substrate.

Further, since the first substrate supporting means for adsorbing the entire surface is used only when rotating at a low speed and the second substrate supporting means adsorbs only at the central portion when rotating at a high speed, the treatment liquid is used. When the substrate is shaken off, the contact area between the substrate supporting means and the substrate is reduced to reduce the situation that the mist (fog) of the processing liquid wraps around between the upper surface of the substrate supporting means and the rear surface of the substrate due to a capillary phenomenon, etc. It is possible to prevent contamination of the substrate and the substrate.

[Brief description of drawings]

FIG. 1 is a schematic view showing an outline of a rotary coating apparatus according to a first embodiment of the present invention.

FIG. 2 is a plan view showing the rotary coating apparatus according to the first embodiment of the present invention.

FIG. 3 is a perspective view showing a circular wafer and a slit nozzle in the rotary coating apparatus.

FIG. 4 is a diagram showing a transfer robot in the rotary coating apparatus according to the first embodiment of the present invention.

FIG. 5 is a flowchart showing the operation of the rotary coating apparatus according to the first embodiment of the present invention.

FIG. 6 is a cross-sectional view showing an outline of a rotary coating apparatus of a first conventional example.

FIG. 7 is a diagram showing a processing liquid discharging operation of the first conventional rotation type coating apparatus.

FIG. 8 is a diagram showing a treatment liquid scattering operation of the rotary coating apparatus according to the first conventional example.

FIG. 9 is a diagram showing an outline of a rotary coating device of a second conventional example.

[Explanation of symbols]

 11 circular wafer 12 first spin chuck 13 first motor 14 slit nozzle 15 slit 16 second spin chuck 17 second motor 18 transfer arm 19 transfer robot

Claims (2)

[Claims] 1. A rotary coating apparatus for coating a surface of a substantially circular substrate by supplying a treatment liquid and rotating the substrate, wherein a first substrate supporting means for sucking and supporting substantially the entire back surface of the substrate. A processing liquid supply unit configured to discharge the processing liquid into a linear shape having a length substantially equal to or slightly shorter than the diameter of the surface of the substrate supported by the first substrate supporting unit; Rotating means for rotating at least one of the substrate supporting means and the processing liquid supply means at a predetermined low speed with respect to the other, and a second substrate for adsorbing and supporting only the central portion of the back surface of the substrate. Supporting means, second rotating means for rotating the second substrate supporting means at a predetermined high speed so as to smooth the processing solution on the substrate by centrifugal force, and processing solution discharge by the processing solution supply means. Later the first
And a transfer means for transferring the substrate from the substrate support means to the second substrate support means. 2. A rotary coating method in which a treatment liquid is supplied to the surface of a substantially circular substrate to rotate the substrate, and the back surface of the substrate is adsorbed by the first substrate supporting means. Rotating at least one of the substrate and the processing liquid supply unit at a predetermined low speed with respect to the other while discharging the processing liquid linearly along the diameter of the substrate onto the surface of the substrate by the processing liquid supply unit. And a treatment liquid discharging step for allowing the treatment liquid to be discharged from the treatment liquid supply means.
A carrying step of carrying the substrate from the first substrate supporting means to the second substrate supporting means, and a state in which only the central portion of the back surface of the substrate is adsorbed and supported by the second substrate supporting means, A high-speed rotation step of rotating the second substrate supporting means at a predetermined high speed so as to smooth the above processing liquid by centrifugal force.