WO2019044114A1 - 表示装置 - Google Patents

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Publication number
WO2019044114A1
WO2019044114A1 PCT/JP2018/022550 JP2018022550W WO2019044114A1 WO 2019044114 A1 WO2019044114 A1 WO 2019044114A1 JP 2018022550 W JP2018022550 W JP 2018022550W WO 2019044114 A1 WO2019044114 A1 WO 2019044114A1
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Prior art keywords
electrodes
pixel
pixel electrode
display device
electrode
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Ceased
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PCT/JP2018/022550
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English (en)
French (fr)
Japanese (ja)
Inventor
浩平 倉田
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Japan Display Inc
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Japan Display Inc
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Publication of WO2019044114A1 publication Critical patent/WO2019044114A1/ja
Priority to US16/747,045 priority Critical patent/US11450830B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H05B33/28—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/813—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80515—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/341—Short-circuit prevention
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition

Definitions

  • the present invention relates to a display device.
  • the present invention relates to an organic EL display device having an organic EL (electroluminescent) element as a light emitting element.
  • organic EL display devices have attracted attention as displays used for display screens of portable terminals and the like.
  • the organic EL display device has the advantage that it has better contrast characteristics and viewing angle characteristics than liquid crystal display devices. Therefore, development of an organic EL display device is urgently required as a display replacing the liquid crystal display device.
  • An organic EL element included in an organic EL display device has a structure in which an organic EL material is provided as a light emitting material between an anode (anode) and a cathode (cathode).
  • An organic EL element emits light by applying a voltage to an organic EL material using an anode and a cathode.
  • organic EL elements having a structure for extracting light from the cathode side have become mainstream.
  • a highly reflective metal material is used for the anode.
  • organic EL display devices using silver and silver alloys as reflective electrodes have been developed (for example, Patent Document 1).
  • Silver and silver alloys have the advantage of high reflectivity, but have the disadvantage that etching control is difficult. For example, since the ionization tendency of silver is small, a wet etching process using an etching solution having strong oxidizing power is used for etching of silver. Therefore, when the silver thin film on the substrate is etched by wet etching, it is necessary to consider the influence on other materials. Under such circumstances, when etching a silver thin film, in order to improve the controllability of the etching process, a method is used in which an etching solution is allowed to flow over the substrate with the substrate being inclined.
  • residues may occur after etching of silver.
  • a silver thin film is subjected to a wet etching process to form an anode electrode
  • the adjacent anode electrodes may be short-circuited.
  • One of the problems of the present invention is to prevent the malfunction of the display device due to the residue after etching at the time of electrode formation.
  • the display device in one embodiment of the present invention is a display device having a region in which a plurality of electrodes are arranged in a matrix.
  • the plurality of electrodes are a plurality of first electrodes positioned along any one side of the region, and a plurality of second electrodes positioned more to the center of the region than the plurality of first electrodes.
  • the first electrode and the second electrode have different contours, and the contours of the plurality of first electrodes include zigzag sides or sides having asperities.
  • upper and “lower” in the cross-sectional view of the display device refer to the surface of the substrate on which the electro-optical element is formed (hereinafter simply referred to as "surface”). It indicates the relative positional relationship based on.
  • surface the surface of the substrate on which the electro-optical element is formed
  • the direction from the surface of the substrate to the electro-optical element is referred to as “upper”
  • the opposite direction is referred to as “lower”.
  • “upper” and “lower” in a plan view of the pixel area indicate “upper” and “lower” when the drawing is viewed from the front.
  • Display refers to a structure that displays an image using an electro-optic layer.
  • the term display may refer to a display cell that includes an electro-optical layer, or refers to a structure in which another optical member (for example, a polarization member, a backlight, a touch panel, etc.) is attached to the display cell.
  • the “electro-optical layer” may include a liquid crystal layer, an electroluminescent (EL) layer, an electrochromic (EC) layer, and an electrophoretic layer unless technical contradiction arises. Therefore, although an organic EL display device including an organic EL layer is illustrated as a display device in the embodiment described later, the application to a display device including the above-described other electro-optical layers is not excluded.
  • an organic EL display device will be described as an example of the display device.
  • the organic EL display device is a display device using an organic EL element as an electro-optical element.
  • FIG. 1 is a plan view showing the configuration of the organic EL display device 100 according to the first embodiment.
  • the array substrate 101 is a substrate on which a plurality of pixels including organic EL elements are formed on the surface side of a support substrate (not shown).
  • the array substrate 101 may be referred to as an active matrix substrate.
  • the array substrate 101 includes a pixel area 20 and a peripheral area 22.
  • a plurality of pixels 20a including organic EL elements are arranged.
  • the pixels 20a are arranged in a matrix as a whole, arranged in the D1 direction (row direction) and the D2 direction (column direction) shown in FIG.
  • a circuit for example, a shift register circuit or the like
  • transmits a signal to the pixel 20 a is disposed.
  • there is no particular limitation on what kind of circuit is arranged in the peripheral region 22.
  • the pixel area 20 not only pixels that actually contribute to image display but also dummy pixels that do not contribute to image display may be provided. In this case, an area provided with pixels contributing to image display may be referred to as a display area.
  • Array substrate 101 includes terminal area 24 as a part of peripheral area 22.
  • a plurality of wires are integrated in the terminal area 24, and the flexible printed circuit board 26 is electrically connected to the wires.
  • a signal (for example, a video signal) transmitted from an external device (not shown) via the flexible printed circuit board 26 is transmitted to the pixel 20 a via a plurality of wires (not shown) extending from the terminal area 24.
  • a drive circuit 28 formed of an IC chip or the like is mounted on the flexible printed circuit board 26.
  • the drive circuit 28 has a role of sending a control signal such as a start pulse to a shift register circuit (not shown) or the like arranged in the peripheral region 22 or performing predetermined signal processing on a video signal.
  • the drive circuit 28 is not an essential component and can be omitted.
  • the pixel 20a shown in FIG. 1 is actually composed of three sub-pixels (sub-pixels) corresponding to three colors of RGB. However, for convenience of explanation, only one sub-pixel will be described here.
  • FIG. 2 is a cross-sectional view showing the configuration of the pixel 20a in the first embodiment.
  • a thin film transistor 50 is provided on a supporting substrate 201 with a base film 202 interposed therebetween.
  • a glass substrate is used as the support substrate 201, but a substrate made of a resin material such as acryl or polyimide may be used.
  • an inorganic insulating film such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film is used.
  • the thin film transistor 50 is a so-called top gate thin film transistor. However, not limited to this, any type of thin film transistor may be provided.
  • the thin film transistor 50 shown in FIG. 2 functions as a drive transistor for supplying a current to the organic EL element 60. Further, in the present embodiment, an N-channel transistor is used as the thin film transistor 50.
  • the structure of the thin film transistor 50 is a well-known structure, detailed description here is abbreviate
  • the storage capacitor 55 is connected to the thin film transistor 50.
  • the storage capacitor 55 can be configured using the two conductive films that constitute the thin film transistor 50 and the insulating film provided therebetween.
  • the storage capacitor 55 of the present embodiment can be formed using a semiconductor layer that constitutes an active layer of the thin film transistor 50, a gate insulating film, and a capacitor electrode (an electrode formed simultaneously with the gate electrode).
  • the structure of the storage capacitor 55 is not limited to this.
  • the thin film transistor 50 is covered with the organic insulating film 120.
  • the organic insulating film 120 functions as a planarizing film that planarizes unevenness due to the shape of the thin film transistor 50.
  • an insulating film containing a resin material such as an acrylic resin or a polyimide resin is used as the organic insulating film 120.
  • the organic insulating film 120 is provided with an opening 122.
  • the opening 122 is covered with the oxide conductive film 124.
  • the oxide conductive film 124 a patterned thin film made of a metal oxide material such as ITO (Indium Tin Oixde) or IZO (Indium Zinc Oixde) is used. However, not only this but another oxide conductive film may be used.
  • the oxide conductive film 124 is connected to part of the thin film transistor 50 exposed by the opening 122 (specifically, the source electrode).
  • the lower electrode 126 of the storage capacitor 57 is formed on the top surface of the organic insulating film 120 using another oxide conductive film formed simultaneously with the oxide conductive film 124.
  • the lower electrode 126 is provided below the organic EL element 60.
  • the organic EL element 60 of the present embodiment is configured to emit light upward, it is possible to form the storage capacitance 57 using the space below the organic EL element 60. It is possible.
  • the oxide conductive film used to form the oxide conductive film 124 and the lower electrode 126 of the storage capacitor 57 can also be used as another application (for example, wiring).
  • wiring resistance can also be reduced by overlappingly arranging a metal film on an oxide conductive film used as a wiring. Since a conductive oxide film composed of a metal oxide has higher resistance than a metal film, it is preferable to overlap the metal film to reduce the overall resistance when using as a wiring.
  • the above-described oxide conductive film 124 also functions as a protective film that protects the source electrode of the thin film transistor 50 from the etching gas.
  • An inorganic insulating film 128 is provided on the oxide conductive film 124 and the lower electrode 126.
  • a silicon nitride film is used as the inorganic insulating film 128 in the present embodiment, the present invention is not limited to this, and other inorganic insulating films such as a silicon oxide film and a silicon oxynitride film can also be used.
  • the inorganic insulating film 128 is provided with an opening 130 a for exposing the organic insulating film 120.
  • the opening 130 a functions as a drainage area 65.
  • the water draining region 65 plays a role of releasing moisture and the like generated from the organic insulating film 120 in the heating process after forming the organic insulating film 120 to the outside.
  • the pixel electrode 132 is provided on the inorganic insulating film 128.
  • the pixel electrode 132 is connected to the oxide conductive film 124 through the opening 130 b provided in the inorganic insulating film 128. That is, the pixel electrode 132 is connected to the thin film transistor 50 through the oxide conductive film 124.
  • the pixel electrode 132 also functions as the upper electrode of the storage capacitor 57 and also functions as the anode (anode electrode) of the organic EL element 60.
  • a plurality of pixel electrodes 132 are also arranged in a matrix in the pixel region 20.
  • the contours of some of the pixel electrodes 132 are made different from the contours of the other pixel electrodes 132, but the details of this will be described later.
  • the pixel electrode 132 a conductive film having a stacked structure in which a layer containing silver is sandwiched between oxide conductive films is used as the pixel electrode 132.
  • the pixel electrode 132 is composed of an IZO layer 132a, a silver layer 132b, and an IZO layer 132c.
  • the pixel electrode 132 preferably includes a conductive film having reflectivity. Therefore, in the present embodiment, a layer made of a metal material containing silver or a silver alloy with high reflectance is used as a part of the pixel electrode 132.
  • the dielectric of the storage capacitor 57 is a silicon nitride film having a dielectric constant higher than that of other insulating films, there is an advantage that a large capacity can be easily secured. Furthermore, since the space under the organic EL element 60 can be disposed effectively, there is an advantage that the occupied area of the storage capacitor 57 can be easily secured large.
  • a portion of the pixel electrode 132 is covered by a bank 134 made of an organic material.
  • the bank 134 has an opening 136 that covers an end of the pixel electrode 132 and exposes a part of the top surface of the pixel electrode 132.
  • a part of the upper surface of the pixel electrode 132 exposed in this manner becomes a substantial light emitting region of the pixel 20a. That is, the bank 134 has a role of defining the light emitting area of the pixel 20a.
  • resin materials such as an acrylic resin or a polyimide resin, can be used, it is not restricted to this.
  • An organic EL layer 138 is provided in a region of the upper surface of the pixel electrode 132 which does not overlap the bank 134 (ie, a region inside the opening 136).
  • the organic EL layer 138 is formed by depositing an organic EL material by vapor deposition.
  • the organic EL layer 138 includes at least a light emitting layer (not shown), and additionally includes an electron injection layer, an electron transport layer, an electron blocking layer, a hole injection layer, a hole transport layer and / or a hole blocking layer. be able to.
  • the organic EL layer 138 can use, for example, an organic EL material that emits red, blue, or green light.
  • a white light emitting organic EL layer can be provided over a plurality of pixels.
  • white light is separated into each color of RGB by a color filter provided in each pixel.
  • functional layers such as an electron injection layer, an electron transport layer, an electron blocking layer, a hole injection layer, a hole transport layer, and a hole blocking layer may be provided over a plurality of pixels.
  • a common electrode 140 formed of a conductive film containing an alkali metal or an alkaline earth metal is provided on the organic EL layer 138.
  • an alkali metal or alkaline earth metal for example, magnesium (Mg), lithium (Li) or the like can be used.
  • an MgAg film, which is an alloy of magnesium and silver, is used as the conductive film containing an alkaline earth metal.
  • the common electrode 140 functions as a cathode (cathode electrode) of the organic EL element 60.
  • the common electrode 140 is provided over a plurality of pixels.
  • the common electrode 140 In the case of a top emission type display device in which light emitted from the organic EL layer 138 is extracted on the upper surface side, that is, the common electrode 140 side, the common electrode 140 is required to be transparent to light. In the case of using the above-described conductive film containing an alkali metal or an alkaline earth metal as the common electrode 140, the film thickness of the common electrode 140 is reduced to a degree that the emitted light passes in order to impart light transmittance. Specifically, by setting the film thickness of the common electrode 140 to 10 nm or more and 30 nm or less, it is possible to impart light transparency.
  • An organic EL element 60 is configured by the pixel electrode 132, the organic EL layer 138, and the common electrode 140 described above.
  • a sealing film 142 is provided on the common electrode 140 (that is, on the organic EL element 60).
  • the sealing film 142 of this embodiment includes, in order from the lower side, a first sealing film 142 a made of an inorganic material, a second sealing film 142 b made of an organic material, and a third seal made of an inorganic material. It comprises three layers of film 142c. These sealing films prevent the entry of moisture and the like from the outside and play a role of preventing the deterioration of the organic EL layer 138 and the common electrode 140.
  • a silicon nitride film is used as the first sealing film 142 a and the third sealing film 142 c.
  • the present invention is not limited to this, and a silicon oxide film or a silicon oxynitride film may be used instead of the silicon nitride film. That is, an inorganic insulating film can be used as the first sealing film 142a.
  • an insulating film containing silicon nitride is preferably used as the inorganic insulating film.
  • an organic insulating film made of a resin material is used as the second sealing film 142b.
  • the unevenness formed by the bank 134 can be flattened.
  • the first sealing film 142 a is formed along the inclined surface of the bank 134 because the film thickness is about 1 ⁇ m.
  • the second sealing film 142 b is formed to have a film thickness of about 10 ⁇ m, it is possible to sufficiently fill in the steps of the opening 136 and the like provided in the bank 134. Therefore, by using the organic insulating film as the second sealing film 142b, the unevenness generated on the upper surface of the second sealing film 142b can be smaller than the unevenness generated on the upper surface of the first sealing film 142a. .
  • FIG. 4A is a plan view showing the configuration of the pixel region 20 in the first embodiment. Specifically, it corresponds to an enlarged view of the vicinity of the side 21a among the sides 21a to 21d constituting the pixel region 20 of FIG.
  • the pixel area 20 of the organic EL display device 100 two types of pixel electrodes having different outlines in plan view are disposed.
  • the plurality of pixel electrodes are pixel regions more than the plurality of first pixel electrodes 132A and the plurality of first pixel electrodes 132A positioned along any one of the sides 21a to 21d constituting the pixel region 20.
  • 20 includes a plurality of second pixel electrodes 132B positioned on the center side (the lower side in the D1 direction in FIG. 4A).
  • the first pixel electrode 132A has a zigzag side 31 in a part of the outline in a plan view.
  • the zigzag side 31 is provided along the D1 direction.
  • the first pixel electrode 132A has a configuration in which the sides 31 processed in a zigzag shape face each other in the D2 direction.
  • the side 32 along the second direction intersecting the first direction is a straight side.
  • the side 32 does not have to be straight, and may have any shape.
  • the second pixel electrodes 132 ⁇ / b> B each have a straight side in outline in plan view. Specifically, both of the side 33 along the D1 direction and the side 34 along the D2 direction are linear sides. However, the side 33 and the side 34 do not have to be linear, and may have any shape.
  • the first pixel electrode 132 ⁇ / b> A shown in FIG. 4A is located at the outermost periphery of the pixel region 20. That is, one of the sides 32 of the plurality of first pixel electrodes 132A constitutes the side 21a among the sides 21a to 21d of the pixel region 20 shown in FIG.
  • the first pixel electrode 132A is disposed only along the side 21a of the pixel region 20, and is not disposed along the sides 21b to 21d.
  • the first pixel electrode 132A may be disposed on at least one side of the pixel region 20, and the first pixel electrode 132A may be disposed along another side (for example, the sides 21b to 21d).
  • the first pixel electrode 132A when forming the pixel electrode 132, the first pixel electrode 132A is located on the most upstream side where the etching solution flows. This point will be described later.
  • Each of the plurality of pixel electrodes 132 in the present embodiment constitutes a sub-pixel.
  • the sub-pixels 35a to 35d function as pixels corresponding to four colors of red, green, blue, and white, respectively.
  • the sub-pixels 35a to 35d combine to function as a main pixel (main pixel) 35.
  • the outermost peripheral sub-pixel of the pixel area 20 is the first pixel electrode 132A, the first pixel electrode 132A and the second pixel electrode 132B are mixed in one main pixel 35.
  • the present invention is not limited to this, and the first pixel electrode 132A may have the shape of the first pixel electrode 132A from the outermost periphery to the second row of the pixel region 20, and pixel electrodes with different outlines may be arranged for each main pixel. Further, the type of sub-pixel constituting the pixel is not limited to the above.
  • FIG. 4B is a plan view for explaining the shape of the pixel electrode 132 in the first embodiment.
  • the first pixel electrodes 132A have zigzag-shaped sides 31 which face each other. Therefore, the gap between two adjacent first pixel electrodes 132A has a first gap W1 and a second relation W2 narrower than the first gap W1.
  • the zigzag-shaped side 31 includes the protruding portion 36 that protrudes toward one side of the pixel region 20 (the side on which the first pixel electrode 132A is disposed).
  • Such a configuration is a device for reducing the residue when forming the pixel electrode by wet etching.
  • the etching liquid is allowed to flow to the substrate surface from a predetermined direction in a state where the substrate to be processed is inclined. Taking the case of FIG. 4B as an example, the etchant flows downward from above along the D1 direction.
  • the side 31 of the first pixel electrode 132A of the present embodiment has a zigzag shape in order to keep the etching solution flowing at this time as long as possible in the gap between two adjacent first pixel electrodes 132A.
  • the side 31 of the zigzag shape includes the projecting portion 36 that protrudes so as to face in the flowing direction of the etching solution, a pocket for retaining the etching solution is formed in the gap between the two adjacent first pixel electrodes 132A. be able to.
  • the gap W3 between two adjacent second pixel electrodes 132B is constant.
  • the gaps W1 and W3 are designed to be equal. That is, the gap W2 is narrower than the gap W3.
  • the gap between the two adjacent first pixel electrodes 132A has a portion narrower than the gap between the two adjacent second pixel electrodes 132B.
  • the gap between two adjacent first pixel electrodes 132A and the gap between two adjacent second pixel electrodes 132B are in a straight line in the D1 direction. Located in That is, the etching solution at the time of forming the pixel electrode flows linearly from the upstream side to the downstream side along the direction D1 in FIGS. 4A and 4B while etching the layer containing silver or a silver alloy.
  • FIG. 5 is a plan view showing the positional relationship between the pixel electrode 132 and the bank 134 in the first embodiment.
  • the bank 134 is provided to cover the edge of the pixel electrode 132 so as to expose a part of the top surface of the pixel electrode 132. Therefore, portions of the first pixel electrode 132A and the second pixel electrode 132B which are not covered by the bank 134 (that is, the first opening 136A and the second opening 136B) function as an effective anode.
  • the first opening 136A and the second opening 136B both have the same shape (i.e., contour) in plan view.
  • the edges of the first pixel electrode 132A and the second pixel electrode 132B correspond to the first opening 136A and the second opening 136B. It is designed not to overlap the contour. That is, the outline of the first opening 136A does not overlap with the zigzag side 31 of the first pixel electrode 132A. Therefore, the contours of the first opening 136A and the second opening 136B can be the same contour without depending on the shapes of the first pixel electrode 132A and the second pixel electrode 132B. Of course, this is merely an example, and the contours of the first opening 136A and the second opening 136B may have different shapes.
  • the present invention is not limited to this.
  • the side is not uneven but uneven, the above-described effect of retaining the etching solution can be obtained.
  • the area is different between the first pixel electrode 132A and the second pixel electrode 132B. Focusing on electrical control, the difference in area causes a difference in capacitance value possessed by the pixel electrode itself, so that the time constant at the time of charge or discharge may be slightly different.
  • the shape of the side 31 is determined so that the difference in the area of the first pixel electrode 132A is ⁇ 5% or less, more preferably ⁇ 3% or less with respect to the second pixel electrode 132B. Is preferred.
  • FIG. 6 is a view showing a forming process of the pixel electrode 132 in the first embodiment.
  • the thin film transistor 50 and the storage capacitor 55 are formed on the support substrate 201.
  • the method for forming the thin film transistor 50 and the storage capacitor 55 is not particularly limited, and can be formed by a known method. Although a glass substrate is used as the support substrate 201 in this embodiment, another insulating substrate may be used.
  • the support substrate 201 When a flexible substrate made of a resin material is used as the support substrate 201, a resin film such as polyimide is formed on a support substrate such as a glass substrate, and the thin film transistor 50 and the storage capacitor 55 are formed on the resin film. Form. Then, after the first sealing film 142a, the second sealing film 142b, and the third sealing film 142c shown in FIG. 2 are finally formed, the resin film may be peeled off from the supporting substrate.
  • a resin film such as polyimide
  • the base film 202 is provided on the support substrate 201, and the semiconductor film 50a is formed thereon.
  • a gate insulating film 50b covering the semiconductor film 50a is formed.
  • the gate electrode 50c is formed on the gate insulating film 50b in a region overlapping with the semiconductor film 50a. Further, simultaneously with the formation of the gate electrode 50c, a capacitance electrode 50d which constitutes a part of the storage capacitance 55 is formed.
  • an insulating film 50e covering the gate electrode 50c and the capacitor electrode 50d is formed, and thereafter, a source electrode 50f and a drain are connected to the semiconductor film 50a via a contact hole (not shown) formed in the insulating film 50e.
  • An electrode 50g is formed.
  • the source electrode 50 f is formed to overlap with the capacitance electrode 50 d in plan view.
  • the thin film transistor 50 and the storage capacitor 55 are formed on the support substrate 201.
  • the organic insulating film 120 is formed.
  • an acrylic resin material having positive photosensitivity is used as the material forming the organic insulating film 120. More specifically, after an acrylic resin material forming the organic insulating film 120 is applied, a region in which the opening 122 is to be formed is selectively exposed by photolithography and patterning is performed to remove unnecessary acrylic resin material. Thus, the organic insulating film 120 having the opening 122 can be formed without performing the etching process. As shown in FIG. 7, the opening 122 is formed to expose a part of the thin film transistor 50 (specifically, the source electrode 50 f).
  • the oxide conductive film 124 made of a metal oxide material such as ITO and the lower electrode 126 of the storage capacitor 57 are formed to cover the opening 122.
  • the oxide conductive film 124 and the lower electrode 126 are formed by patterning an oxide conductive film such as ITO formed so as to cover the organic insulating film 120 by photolithography.
  • the oxide conductive film 124 is electrically connected to the source electrode 50 f of the thin film transistor 50.
  • the lower electrode 126 is provided in a region where the organic EL element 60 is formed later.
  • the inorganic insulating film 128 is formed.
  • a silicon nitride film is formed as the inorganic insulating film 128.
  • an opening 130a for exposing a portion of the organic insulating film 120 and an opening 130b for exposing a portion of the oxide conductive film 124 are formed.
  • the inorganic insulating film 128 functions as a protective film that prevents the moisture generated from the organic insulating film 120 from affecting the organic EL element 60, and also functions as a dielectric constituting the storage capacitor 57.
  • the conductive film 41 is formed on the inorganic insulating film 128.
  • the conductive film 41 has a laminated structure including the IZO thin film 132a, the silver thin film 132b, and the IZO thin film 132c shown in FIG. That is, the conductive film 41 configures the pixel electrode 132 by the etching process described later.
  • a resist mask 42 is provided on the conductive film 41.
  • the conductive film 41 is wet-etched to form a pixel electrode 132. Since the conductive film 41 has a thin film containing silver with a low ionization tendency, a solution having strong oxidizing power is used as an etchant used for the wet etching process.
  • the conductive film 41 is etched using a mixed acid.
  • the mixed acid as used herein refers to a liquid in which concentrated sulfuric acid and concentrated nitric acid are mixed at a volume ratio of 3: 1.
  • mixed acid was illustrated in this embodiment, you may use the liquid which mixed oxalic acid with mixed acid, and may use another etching liquid.
  • the wet etching process of the conductive film 41 is performed in a state where the support substrate 201 is inclined.
  • the support substrate 201 on which the conductive film 41 is formed is held obliquely so as to form an angle ⁇ with respect to the horizontal surface 44.
  • a method is employed in which the etching solution is allowed to flow downward from above the support substrate 201 along the direction D1.
  • the etching solution flows from the upper side to the lower side along the arrow 45 indicated by a two-dot chain line.
  • it may be expressed as "upstream” or "downstream" of the etching solution.
  • a plurality of display devices are simultaneously formed using a large support substrate.
  • a plurality of device formation regions 46 are provided on the support substrate 201, and the conductive film 41 and the resist mask 42 shown in FIG. 7 are formed on each of them. Therefore, according to the configuration of FIG. 8, the conductive films 41 formed in all the device formation regions 46 on the support substrate 201 can be collectively subjected to the wet etching process.
  • the etching solution flowing from the upstream side first etches the conductive film 41 formed in each device formation region 46 from the upstream side. Since it is not necessary to form the pixel electrode 132 in the area other than the pixel area 20, the resist mask 42 is not disposed. Therefore, the conductive film 41 disappears in the area other than the pixel area 20.
  • the conductive film 41 is etched along the shape of the resist mask 42, whereby the pixel electrode 132 having a predetermined shape is formed.
  • the etching solution passes quickly downward, so that the residue of the silver thin film remains when the pixel electrode is formed. It was easy. Therefore, in the present embodiment, the first pixel having the side 31 in the zigzag shape shown in FIGS. 4A and 4B along the side located on the upstream side through which the etching solution flows among the sides forming the pixel region 20.
  • An electrode 132A is formed.
  • the side 31 of the first pixel electrode 132A has a zigzag shape
  • the etchant is likely to stay in the gap between two adjacent first pixel electrodes 132A.
  • the side 31 in the zigzag shape includes the protruding portion 36 that protrudes in the direction in which the etching solution flows.
  • a pocket for retaining the etching solution is formed in the gap between the two adjacent first pixel electrodes 132A, and the etching solution can be retained more efficiently.
  • the etching solution can be retained between the facing sides 31.
  • the generation of the residue of the silver thin film 132b can be suppressed.
  • the first pixel electrode 132A may be formed over a plurality of lines.
  • the electrode (electrode corresponding to the pixel electrode) included in the dummy pixel may play the role of the first pixel electrode 132A.
  • the etching solution flows further downward, and the etching process proceeds.
  • the conductive film 41 is gradually etched from the upstream side, and the second pixel electrode 132B is formed sequentially.
  • the etching solution tends to pass downward rapidly.
  • the progress of the etching solution is delayed, and thus the problem does not occur even if it does not have the zigzag shaped side 31 like the first pixel electrode 132A. .
  • the pixel electrode 132 is formed.
  • the pixel electrode 132 is electrically connected to the oxide conductive film 124 inside the opening 130 b.
  • the pixel electrode 132 is electrically connected to the thin film transistor 50 through the oxide conductive film 124.
  • the area where the organic insulating film 120 is exposed inside the opening 130 a functions as the water draining area 65 shown in FIG. 2. That is, when heat treatment is performed after the formation of the opening 130 a, the water evaporated inside the organic insulating film 120 is released to the outside through the water draining region 65.
  • a storage capacitor 57 formed of the lower electrode 126, the inorganic insulating film 128, and the pixel electrode 132 is formed.
  • the storage capacitor 57 is disposed between the gate electrode 50 c and the source electrode 50 f of the thin film transistor 50 formed of an N-channel transistor. That is, the lower electrode 126, which is one of the electrodes of the storage capacitor 57, is connected to the gate electrode 50c.
  • the pixel electrode 132 which is the other electrode of the storage capacitor 57 is connected to the source electrode 50 f.
  • a bank 134 made of a resin material is formed.
  • a photosensitive acrylic resin material is used as the material forming the bank 134.
  • the bank 134 is patterned to cover the outer edge of the pixel electrode 132 and to expose the upper surface of the pixel electrode 132.
  • the opening 136 formed by this patterning defines a region (light emitting region) functioning as the organic EL element 60 on the top surface of the pixel electrode 132.
  • the organic EL layer 138 and the common electrode 140 are formed.
  • the organic EL layer 138 and the common electrode 140 are formed separately for each pixel using a vapor deposition method, but the present invention is not limited to this.
  • a functional layer such as an electron transport layer or a hole transport layer other than the light emitting layer may be commonly provided to a plurality of pixels.
  • the organic electroluminescent layer 138 which can be used in this embodiment, It is possible to use a well-known material.
  • a conductive film (MgAg film) made of an alloy containing magnesium and silver is used as the common electrode 140.
  • a conductive film containing such an alkali metal or alkaline earth metal is weak to moisture and the like as the organic EL layer 138. Therefore, it is desirable that the deposition of the organic EL layer 138 and the deposition of the common electrode 140 be performed without opening to the air. In this case, it is preferable to perform the vapor deposition process continuously while maintaining the vacuum, but it is also effective to perform the vapor deposition process continuously while maintaining an inert atmosphere such as a nitrogen atmosphere.
  • the organic EL element 60 configured of the pixel electrode 132, the organic EL layer 138, and the common electrode 140 is formed inside the opening 136 provided in the bank 134.
  • a first sealing film 142a composed of a silicon nitride film
  • a second sealing film 142b composed of a resin material
  • a third sealing film 142c composed of a silicon nitride film
  • the third sealing formed on the second sealing film 142b because the second sealing film 142b can flatten the unevenness. It is possible to reduce the possibility that the film 142c may be peeled off or coverage may be deteriorated due to the influence of foreign matter.
  • Second Embodiment In the present embodiment, an example will be described in which the arrangement of the first pixel electrodes 132A in the pixel region 20 is different from that of the first embodiment.
  • symbol may be attached
  • the first pixel electrodes 132A are arranged for one row along the side located on the upstream side through which the etching solution flows among the sides of the pixel region 20 . That is, in the first embodiment, as shown in FIG. 4A, the first pixel electrode 132A is located at the outermost periphery of the pixel region 20. On the other hand, in the present embodiment, an example in which the first pixel electrode 132A is disposed not only on the outermost periphery of the pixel region 20 but also on the center side of the pixel region 20 is shown.
  • FIG. 11A is a plan view showing the configuration of the pixel region 20 in the second embodiment.
  • a plurality of rows from the outermost periphery of the pixel region 20 are configured by the first pixel electrodes 132A.
  • the present invention is not limited to this.
  • the etching solution when forming the pixel electrode 132, the etching solution is stagnated by the plurality of rows of first pixel electrodes 132A. That is, it is possible to retain the etching solution in the vicinity of one side located on the upstream side of the etching solution among the sides of the pixel region 20 for a longer time than the configuration of the first embodiment. Therefore, it is possible to further reduce the etching residue of the silver thin film 132 b constituting the pixel electrode 132.
  • the first pixel electrode 132A is configured with the first pixel electrode 132A from the outermost periphery to the third row of the pixel region 20.
  • the present invention is not limited to this. It can consist of 132A.
  • FIG. 11B is a plan view showing the configuration of the pixel region 20 in the second embodiment.
  • the outermost periphery to the second row of the pixel region 20 is configured by the first pixel electrode 132A
  • the third to subsequent rows from the outermost periphery are configured by the second pixel electrode 132B. That is, the contours of the pixel electrodes 132 are made different with the main pixel 35 as a unit. Therefore, according to the example of FIG. 11B, it is possible to configure the first pixel electrode 132A from the outermost periphery to the fourth row of the pixel region 20 and configure the second pixel electrode 132B to the fifth row from the outermost periphery. It is.
  • 12A to 12D are diagrams for explaining the shape (outline) of the pixel electrode in the third embodiment. 12A to 12D, only four sub-pixels will be described for convenience of description, but the pixel region 20 has more sub-pixels. In addition, although an example in which only the pixel electrode located at the outermost periphery of the pixel region 20 is used as the first pixel electrode is shown, as in the second embodiment, the pixel electrode at any position may be used as the first pixel electrode.
  • the first pixel electrode 132A-1 has a side 31a in a zigzag shape.
  • the side 31a has a projecting portion 36a that forms an acute angle with the direction D1 as compared to the side 31 illustrated in FIGS. 4A and 4B. Therefore, the etching solution flowing from the upper side of FIG. 12A can be retained longer in the vicinity of the side 31a.
  • the first pixel electrode 132A-2 has a side 31b in a zigzag shape.
  • the side 31 b has a projecting portion 36 b which makes an obtuse angle with the direction D 1 as compared to the side 31 shown in FIGS. 4A and 4B. Even with such a shape, gaps of different widths are formed in the gaps between adjacent first pixel electrodes 132A-2, so that the etchant can be retained.
  • the first pixel electrode 132A-3 has a wave-shaped side 31c. Even with such a shape, a gap having a different width is formed in the gap between adjacent first pixel electrodes 132A-3, so that it is possible to retain the etching solution.
  • the first pixel electrode 132A-4 has a rectangular side 31d. Even with such a shape, gaps of different widths are formed in the gaps between adjacent first pixel electrodes 132A-4, so that the etchant can be retained. In addition, since the portion 36d corresponding to the rectangular recess functions as a pocket in which the etching solution is collected, the etching solution can be retained longer in the vicinity of the side 31d.
  • FIG. 13 is a view for explaining the shape (contour) of the pixel electrode in the fourth embodiment. Although only four sub-pixels are described in FIG. 13 for convenience of explanation, the pixel region 20 has more sub-pixels. In addition, although an example in which only the pixel electrode located at the outermost periphery of the pixel region 20 is used as the first pixel electrode is shown, as in the second embodiment, the pixel electrode at any position may be used as the first pixel electrode.
  • the first pixel electrode 132A-5 has a curved side 31e. Specifically, the side 31 e forms a recess in the direction in which the etchant flows. Therefore, the etching solution which has flowed from above in the D1 direction is collected near the side 31e. Therefore, the etching residue of the silver thin film 132b in the vicinity of the side 31e can be prevented.
  • the shape of the pixel electrode is described as an example of the embodiment of the present invention.
  • the present invention has a feature that residues after etching are easily left
  • the present invention is applicable to display devices provided with electrodes in general. That is, the present invention can be applied to a display device having a region in which a plurality of electrodes are arranged in a matrix.

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