JP2019040113A - 表示装置 - Google Patents
表示装置 Download PDFInfo
- Publication number
- JP2019040113A JP2019040113A JP2017163113A JP2017163113A JP2019040113A JP 2019040113 A JP2019040113 A JP 2019040113A JP 2017163113 A JP2017163113 A JP 2017163113A JP 2017163113 A JP2017163113 A JP 2017163113A JP 2019040113 A JP2019040113 A JP 2019040113A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- pixel
- pixel electrode
- display device
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011159 matrix material Substances 0.000 claims abstract description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 25
- 239000004332 silver Substances 0.000 claims description 24
- 229910052709 silver Inorganic materials 0.000 claims description 23
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 7
- 239000007769 metal material Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 abstract description 58
- 230000015572 biosynthetic process Effects 0.000 abstract description 9
- 230000007257 malfunction Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 165
- 238000005401 electroluminescence Methods 0.000 description 67
- 239000010410 layer Substances 0.000 description 53
- 239000000758 substrate Substances 0.000 description 43
- 239000010409 thin film Substances 0.000 description 42
- 239000000243 solution Substances 0.000 description 39
- 238000007789 sealing Methods 0.000 description 30
- 238000000034 method Methods 0.000 description 27
- 239000003990 capacitor Substances 0.000 description 25
- 239000000463 material Substances 0.000 description 24
- 238000003860 storage Methods 0.000 description 22
- 230000008569 process Effects 0.000 description 15
- 238000011144 upstream manufacturing Methods 0.000 description 13
- 239000011347 resin Substances 0.000 description 11
- 229920005989 resin Polymers 0.000 description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- 238000001039 wet etching Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000004925 Acrylic resin Substances 0.000 description 6
- 229920000178 Acrylic resin Polymers 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 230000000717 retained effect Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 229910052783 alkali metal Inorganic materials 0.000 description 5
- 150000001340 alkali metals Chemical class 0.000 description 5
- 239000002253 acid Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/813—Anodes characterised by their shape
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
- H05B33/28—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80515—Anodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/341—Short-circuit prevention
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
【解決手段】表示装置は、複数の画素電極がマトリクス状に配置された画素領域20を有する表示装置であって、複数の画素電極は、画素領域のいずれか一辺に沿って位置する複数の第1画素電極132Aと、第1画素電極よりも前記領域の中央側に位置する複数の第2画素電極132Bとを含み、平面視において、第1画素電極と第2画素電極とは輪郭が異なり、平面視において、第1画素電極の輪郭は、ジグザグ状の辺31を有する。
【選択図】図4A
Description
光学部材(例えば、偏光部材、バックライト、タッチパネル等)を装着した構造体を指す場合もある。ここで、「電気光学層」には、技術的な矛盾を生じない限り、液晶層、エレクトロルミネセンス(EL)層、エレクトロクロミック(EC)層、電気泳動層が含まれ得る。したがって、後述する実施形態について、表示装置として、有機EL層を含む有機EL表示装置を例示して説明するが、上述した他の電気光学層を含む表示装置への適用を排除するものではない。
<表示装置の構成>
本実施形態では、表示装置として有機EL表示装置を例に挙げて説明する。有機EL表示装置は、電気光学素子として有機EL素子を用いた表示装置である。
前述のとおり、本実施形態では、一部の画素電極132の輪郭を、他の画素電極132の輪郭と異ならせている。その点について以下に説明する。
次に、本実施形態の有機EL表示装置100の製造方法について説明する。図6、図7、図9及び図10は、第1実施形態の有機EL表示装置100の製造工程を示す断面図である。図8は、第1実施形態における画素電極132の形成工程を示す図である。
本実施形態では、画素領域20における第1画素電極132Aの配置を第1実施形態とは異ならせた例について説明する。なお、本実施形態では、第1実施形態の有機EL表示装置100と共通する部分には、同一の符号を付して説明を省略することがある。
本実施形態では、平面視における第1画素電極の形状(輪郭)を第1実施形態とは異ならせた例について説明する。なお、本実施形態では、第1実施形態の有機EL表示装置100と共通する部分には、同一の符号を付して説明を省略することがある。
本実施形態では、平面視における第1画素電極の形状(輪郭)を第1実施形態及び第3実施形態とは異ならせた例について説明する。なお、本実施形態では、第1実施形態の有機EL表示装置100と共通する部分には、同一の符号を付して説明を省略することがある。
Claims (12)
- 複数の電極がマトリクス状に配置された領域を有する表示装置であって、
前記複数の電極は、前記領域のいずれか一辺に沿って位置する複数の第1電極と、前記複数の第1電極よりも前記領域の中央側に位置する複数の第2電極とを含み、
平面視において、前記第1電極と前記第2電極とは輪郭が異なり、
平面視において、前記複数の第1電極の輪郭は、ジグザグ状の辺又は凹凸を有する辺を含む、
表示装置。 - 前記複数の第1電極の内の隣り合う2つの第1電極の間隙は、第1の間隙と、前記第1の間隙よりも狭い第2の間隙とを有する、
請求項1に記載の表示装置。 - 前記複数の第1電極の内の隣り合う2つの第1電極の間隙は、前記複数の第2電極の内の隣り合う2つの第2電極の間隙よりも狭い部分を有する、
請求項1に記載の表示装置。 - 前記複数の第1電極の内の隣り合う2つの第1電極の間隙と、前記複数の第2電極の内の隣り合う2つの第2電極の間隙とが一直線上に位置する、
請求項1に記載の表示装置。 - 前記複数の第1電極は、前記領域の最外周に位置する、
請求項1に記載の表示装置。 - 前記領域は、画素領域であり、
前記複数の電極は、複数の画素電極であり、
前記複数の第1電極及び前記複数の第2電極は、それぞれ複数の第1画素電極及び複数の第2画素電極である、
請求項1に記載の表示装置。 - 前記複数の画素電極の端部を覆うと共に、前記複数の画素電極の各々の上面を露出させる開口を有するバンクをさらに有し、
平面視において、前記開口の輪郭は、前記ジグザグ状の辺又は前記凹凸を有する辺とは重ならない、
請求項6に記載の表示装置。 - 前記複数の画素電極の端部を覆うと共に、前記複数の画素電極の各々の上面を露出させる開口を有するバンクをさらに有し、
前記第1画素電極の上に形成される前記開口と、前記第2画素電極の上に形成される前記開口の形状が等しい、請求項6に記載の表示装置。 - 前記複数の画素電極は、それぞれ副画素を構成する画素電極であり、
1つの主画素は、複数の前記副画素により構成され、
複数の前記主画素の内のいずれかは、前記第1画素電極及び前記第2画素電極を含む、請求項6に記載の表示装置。 - 前記複数の電極は、銀又は銀合金を含む金属材料で構成される、
請求項1に記載の表示装置。 - 前記複数の第1電極の輪郭のうち第1方向に沿った辺は、前記ジグザグ状の辺又は前記凹凸を有する辺であり、
前記複数の第1電極の輪郭のうち前記第1方向と交差する第2方向に沿った辺は、直線状の辺である、
請求項1に記載の表示装置。 - 前記ジグザグ状の辺又は前記凹凸を有する辺は、前記一辺に向かって突出する突出部を含む、請求項1に記載の表示装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017163113A JP6905421B2 (ja) | 2017-08-28 | 2017-08-28 | 表示装置 |
PCT/JP2018/022550 WO2019044114A1 (ja) | 2017-08-28 | 2018-06-13 | 表示装置 |
US16/747,045 US11450830B2 (en) | 2017-08-28 | 2020-01-20 | Semiconductor device and display device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017163113A JP6905421B2 (ja) | 2017-08-28 | 2017-08-28 | 表示装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2019040113A true JP2019040113A (ja) | 2019-03-14 |
JP2019040113A5 JP2019040113A5 (ja) | 2020-09-24 |
JP6905421B2 JP6905421B2 (ja) | 2021-07-21 |
Family
ID=65527309
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017163113A Active JP6905421B2 (ja) | 2017-08-28 | 2017-08-28 | 表示装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US11450830B2 (ja) |
JP (1) | JP6905421B2 (ja) |
WO (1) | WO2019044114A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2024052950A1 (ja) * | 2022-09-05 | 2024-03-14 | シャープディスプレイテクノロジー株式会社 | 表示装置 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210018588A (ko) * | 2019-08-05 | 2021-02-18 | 삼성디스플레이 주식회사 | 표시 장치 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005077526A (ja) * | 2003-08-28 | 2005-03-24 | Sony Corp | 銀及び/又は銀合金を含む基板のフォトレジスト剥離液組成物、それを用いたパターンの製造方法ならびにそれを含む表示装置 |
JP2005215586A (ja) * | 2004-02-02 | 2005-08-11 | Fujitsu Display Technologies Corp | 液晶表示装置及びその製造方法 |
JP2011077512A (ja) * | 2009-09-04 | 2011-04-14 | Semiconductor Energy Lab Co Ltd | 発光装置及び発光装置の作製方法 |
JP2015138612A (ja) * | 2014-01-21 | 2015-07-30 | 株式会社ジャパンディスプレイ | 有機エレクトロルミネセンス表示装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6838819B2 (en) * | 2000-06-19 | 2005-01-04 | Lg Electronics Inc. | Full color organic EL display panel, manufacturing method thereof and driving circuit thereof |
US7652291B2 (en) * | 2005-05-28 | 2010-01-26 | Samsung Mobile Display Co., Ltd. | Flat panel display |
KR102387632B1 (ko) * | 2015-09-24 | 2022-04-15 | 엘지디스플레이 주식회사 | 표시패널 및 이를 이용한 표시장치 |
CN106855767A (zh) * | 2017-01-09 | 2017-06-16 | 京东方科技集团股份有限公司 | 一种触摸基板及触控显示装置 |
JP6938323B2 (ja) * | 2017-10-13 | 2021-09-22 | 株式会社ジャパンディスプレイ | 表示装置 |
-
2017
- 2017-08-28 JP JP2017163113A patent/JP6905421B2/ja active Active
-
2018
- 2018-06-13 WO PCT/JP2018/022550 patent/WO2019044114A1/ja active Application Filing
-
2020
- 2020-01-20 US US16/747,045 patent/US11450830B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005077526A (ja) * | 2003-08-28 | 2005-03-24 | Sony Corp | 銀及び/又は銀合金を含む基板のフォトレジスト剥離液組成物、それを用いたパターンの製造方法ならびにそれを含む表示装置 |
JP2005215586A (ja) * | 2004-02-02 | 2005-08-11 | Fujitsu Display Technologies Corp | 液晶表示装置及びその製造方法 |
JP2011077512A (ja) * | 2009-09-04 | 2011-04-14 | Semiconductor Energy Lab Co Ltd | 発光装置及び発光装置の作製方法 |
JP2015138612A (ja) * | 2014-01-21 | 2015-07-30 | 株式会社ジャパンディスプレイ | 有機エレクトロルミネセンス表示装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2024052950A1 (ja) * | 2022-09-05 | 2024-03-14 | シャープディスプレイテクノロジー株式会社 | 表示装置 |
Also Published As
Publication number | Publication date |
---|---|
JP6905421B2 (ja) | 2021-07-21 |
US20200152905A1 (en) | 2020-05-14 |
US11450830B2 (en) | 2022-09-20 |
WO2019044114A1 (ja) | 2019-03-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101288427B1 (ko) | 표시 기판 및 그 제조방법 | |
JP6211873B2 (ja) | 有機el表示装置及び有機el表示装置の製造方法 | |
US8410484B2 (en) | Flat display device with a dummy pixel integrally formed in a peripheral region | |
JP4139346B2 (ja) | 平板表示装置及びその製造方法 | |
US7439539B2 (en) | Flat panel display device and fabricating method thereof | |
US9515129B2 (en) | Organic light emitting display apparatus and manufacturing method thereof | |
US9012271B2 (en) | Thin film transistor array substrate and method of manufacturing the same | |
US9244313B2 (en) | Display device | |
CN210467844U (zh) | 显示面板和显示装置 | |
WO2021016945A1 (zh) | 显示基板和显示装置 | |
KR20150125207A (ko) | 유기 발광 표시 장치 및 이의 제조 방법 | |
JP6223070B2 (ja) | 有機el表示装置及び有機el表示装置の製造方法 | |
US11276740B2 (en) | Semiconductor device and display device | |
US11450830B2 (en) | Semiconductor device and display device | |
JP5241966B2 (ja) | 半導体装置、tft基板、ならびに半導体装置およびtft基板の製造方法 | |
US20230422561A1 (en) | Flexible Display Device and Method of Manufacturing the Same | |
KR102122401B1 (ko) | 유기전계 발광소자 및 이의 제조 방법 | |
JP2018116769A (ja) | 表示装置 | |
KR20140052450A (ko) | 산화물 반도체를 포함하는 박막 트랜지스터 기판 및 그 제조 방법 | |
JP2001142097A (ja) | 液晶表示装置とその製造方法 | |
CN111788865A (zh) | 有机el显示装置 | |
US20240090272A1 (en) | Method of manufacturing display device and mother substrate | |
EP4207969A1 (en) | Display device | |
JP2018113138A (ja) | 表示装置 | |
KR102544941B1 (ko) | 유기발광표시장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200804 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200804 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210608 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210625 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6905421 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |