WO2019041836A1 - 像素界定层及制造方法、显示面板及制造方法、显示装置 - Google Patents

像素界定层及制造方法、显示面板及制造方法、显示装置 Download PDF

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Publication number
WO2019041836A1
WO2019041836A1 PCT/CN2018/084051 CN2018084051W WO2019041836A1 WO 2019041836 A1 WO2019041836 A1 WO 2019041836A1 CN 2018084051 W CN2018084051 W CN 2018084051W WO 2019041836 A1 WO2019041836 A1 WO 2019041836A1
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sub
pattern
light
pixel defining
region
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PCT/CN2018/084051
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English (en)
French (fr)
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张玉欣
程鸿飞
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京东方科技集团股份有限公司
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Priority to US16/329,401 priority Critical patent/US10886343B2/en
Publication of WO2019041836A1 publication Critical patent/WO2019041836A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour

Definitions

  • Embodiments of the present disclosure relate to the field of display technologies, and in particular, to a pixel defining layer and a manufacturing method thereof, a display panel, a manufacturing method, and a display device.
  • the self-luminous display panel usually includes an anode, a light-emitting layer, a cathode, and the like.
  • the self-luminous display panel may include a Quantum Dot Light Emitting Diodes (QLED) display panel and an organic light-emitting diode (Organic Light-Emitting Diode).
  • QLED Quantum Dot Light Emitting Diodes
  • OLED Organic Light-Emitting Diode
  • the light-emitting layer generally comprises a hole injection layer, a hole transport layer, a light-emitting material layer, an electron transport layer, an electron injection layer, etc.
  • the light-emitting layer can be generally prepared by a solution method, for example, inkjet printing (Ink-Jet Printing; :IJP) Technology to manufacture luminescent layers.
  • the process of preparing the light-emitting layer it is generally required to form a pixel defining layer on the substrate, and then spray the ink of the material in which the light-emitting layer is dissolved into a region surrounded by the pixel defining layer, and then form an ink solvent to evaporate.
  • Light-emitting layer In the process of preparing the light-emitting layer, it is generally required to form a pixel defining layer on the substrate, and then spray the ink of the material in which the light-emitting layer is dissolved into a region surrounded by the pixel defining layer, and then form an ink solvent to evaporate. Light-emitting layer.
  • a pixel defining layer comprising a plurality of pixel defining patterns arranged in a matrix, wherein each of the pixel defining patterns comprises a first sub-defining pattern and a second sub-defining pattern, the second sub- a defining pattern nesting is disposed within the first sub-defining pattern, and an outer edge of the second sub-defining pattern is coupled to an inner edge of the first sub-defining pattern,
  • the thickness of the first sub-definition pattern is greater than the thickness of the second sub-definition pattern, and the area enclosed by the second sub-definition pattern is a light-emitting area of the illuminating layer.
  • the second sub-definition pattern is an annular pattern.
  • the first sub-definition pattern and the second sub-definition pattern form a unitary structure.
  • the pixel defining pattern further includes a convex structure disposed on the second sub-defining pattern, a sum of a thickness of the convex structure and a thickness of the second sub-defining pattern is smaller than the first The sub defines the thickness of the pattern.
  • the convex structure of each pixel defining pattern is a unitary structure, or the convex structure of each pixel defining pattern includes a plurality of strip structures arranged along an extending direction of the second sub-defining pattern.
  • the protruding structure forms a unitary structure with the second sub-defining pattern, or the protruding structure, the first sub-defining pattern and the second sub-defining pattern form a unitary structure.
  • the plurality of pixel defining patterns are insulated from each other.
  • a method of fabricating a pixel defining layer including:
  • each of the pixel defining patterns includes a first sub-defining pattern and a second sub-defining pattern, the second sub-defining pattern is nested within the first sub-defining pattern, and the second sub-defining pattern
  • An outer edge is connected to an inner edge of the first sub-definition pattern, a thickness of the first sub-definition pattern is greater than a thickness of the second sub-definition pattern, and a region surrounded by the second sub-definition pattern is a light-emitting layer Illuminated area.
  • the pixel defining pattern is made of a photosensitive resin material
  • the plurality of pixel defining patterns forming the matrix arrangement include:
  • the developed film defining film layer is baked to obtain the pixel defining pattern.
  • the halftone mask includes a first light transmissive region, a second light transmissive region, and a light shielding region, wherein the second light transmissive region is an annular region, and the first light transmissive region is the a region surrounded by the two light-transmitting regions, wherein the light transmittance of the first light-transmitting region is greater than the light transmittance of the second light-transmitting region, and the light-shielding region is a region peripheral to the second light-transmitting region.
  • the exposing the thin film layer defining the pixel by using a halftone mask comprises:
  • the thickness of the first exposed region after development is 0, and the thickness of the second exposed region after development is x, x>0.
  • the halftone mask includes a first light transmissive region, a second light transmissive region, a third light transmissive region, and a light shielding region.
  • the second light transmissive area and the third light transmissive area form an annular area
  • the first light transmissive area is an area surrounded by the annular area
  • the second light transmissive area surrounds the a light transmissive portion of the first light transmitting region is greater than a light transmittance of the second light transmitting region
  • a light transmittance of the second light transmitting region is greater than that of the third light transmitting region
  • the luminosity, the light-shielding region is a region around the periphery of the annular region
  • the exposing the film defining the film layer by using a halftone mask comprises:
  • the thickness of the first exposed region after development is 0, the thickness of the second exposed region after development is x, and the thickness of the third exposed region after development is y, y>x>0.
  • a display panel comprising: a substrate substrate; and a pixel defining layer according to any of the first aspects disposed on the substrate.
  • the display panel further includes: a first electrode disposed between the substrate substrate and the pixel defining layer, and a light emitting layer disposed on a side of the first electrode away from the substrate substrate Layer and second electrode,
  • the thickness of the light emitting layer is smaller than the thickness of the first sub-definition pattern, and the thickness of the light emitting layer is greater than the thickness of the second sub-definition pattern.
  • the light emitting layer is an organic light emitting layer or an inorganic light emitting layer.
  • a method of manufacturing a display panel including:
  • the pixel defining layer includes a plurality of pixel defining patterns arranged in a matrix, each of the pixel defining patterns including a first sub Defining a pattern and a second sub-definition pattern, the second sub-definition pattern is nested within the first sub-definition pattern, and an outer edge of the second sub-definition pattern and an inner portion of the first sub-definition pattern An edge connection, a thickness of the first sub-definition pattern being greater than a thickness of the second sub-definition pattern;
  • a second electrode is formed on the base substrate on which the light emitting layer is formed.
  • a display device comprising: the display panel of any of the third aspects.
  • the display device further includes a thin film transistor, and the thin film transistor is a top gate structure or a bottom gate structure.
  • the display device is a top emission type structure, a bottom emission type structure or an inverted type structure.
  • FIG. 1 is a schematic structural view of a self-luminous display device in the related art
  • 2-1 is a schematic structural diagram of a pixel defining layer according to an embodiment of the present disclosure
  • FIG. 2-2 is a cross-sectional view of a pixel defining pattern in the pixel defining layer illustrated in FIG. 2-1;
  • 2-3 is a cross-sectional view of another pixel defining pattern provided by an embodiment of the present disclosure.
  • FIGS. 2-3 are top views of the pixel defining patterns illustrated in FIGS. 2-3;
  • FIGS. 2-3 are another top view of the pixel defining pattern shown in FIGS. 2-3;
  • FIG. 3 is a schematic structural diagram of a display panel according to an embodiment of the present disclosure.
  • FIG. 4 is a schematic structural diagram of a display device according to an embodiment of the present disclosure.
  • 5-1 is a flowchart of a method for forming a pixel defining pattern according to an embodiment of the present disclosure
  • 5-3 is a schematic diagram of exposing a pixel-defining film layer using a halftone mask according to an embodiment of the present disclosure
  • 5-4 is a schematic diagram of exposing a pixel-defining film layer using a halftone mask according to another embodiment of the present disclosure
  • FIG. 6 is a flowchart of a method of manufacturing a display panel according to an embodiment of the present disclosure.
  • Self-illuminating displays (such as QLED displays and OLED displays) have the advantages of self-luminescence, fast response, wide viewing angle, high brightness, color and lightness compared with liquid crystal displays.
  • the method for manufacturing the film layer in the electroluminescent device mainly has vacuum. Evaporation and solution processes are two. Vacuum evaporation is suitable for film formation of organic small molecular materials, and has the advantages of good film formation uniformity and relatively mature technology.
  • the solution process includes spin coating, inkjet printing, and nozzle coating methods. Among them, inkjet printing technology is considered to be a large-size QLED and OLED mass production method due to its high material utilization rate and large size. .
  • the inkjet printing technique requires that a pixel defining layer be formed in advance on the substrate on which the first electrode is formed to define that the solution of the inkjet printing can accurately flow into the designated R/G/B sub-pixel region.
  • it is generally required to form a pixel defining layer on the substrate, and then spray the ink of the material in which the light-emitting layer is dissolved into a region surrounded by the pixel defining layer, and then form an ink solvent to evaporate.
  • Light-emitting layer In the process of preparing the light-emitting layer.
  • the thickness of the edge region (near the pixel defining layer) in the light emitting region defined by the pixel defining layer is greater than the thickness of the intermediate region, and may appear after the ink solvent evaporates to form the light emitting layer.
  • the phenomenon of the coffee ring causes the thickness of the light-emitting area of the light-emitting layer to be non-uniform, which may result in poor uniformity of display brightness of the display panel.
  • a schematic structural view of the self-illuminating display device may be as shown in FIG. 1.
  • the cross section of the pixel defining layer 11 is a "positive" trapezoid, and there is a surface energy difference due to the contact between the inkjet printing solution and the pixel defining layer 11.
  • the side surface of the pixel defining layer 11 has a certain inclination angle, and the solution has a certain degree of climbing on the pixel defining layer 11, which causes the luminescent layer 12 formed after the solvent to dry to have a thin and thin edge at the edge, that is, coffee.
  • the ring effect causes the thickness of the light-emitting layer to be non-uniform, resulting in poor uniformity of display brightness of the display panel.
  • Embodiments of the present disclosure provide a pixel defining layer and a manufacturing method thereof, a display panel, a manufacturing method, and a display device, which can solve the problem that the thickness of the light emitting region of the light emitting layer is not uniform, resulting in poor uniformity of display brightness of the display panel. The problem.
  • the pixel defining layer 20 includes:
  • the sleeve is disposed within the first sub-definition pattern 211, and the outer edge of the second sub-definition pattern 212 is coupled to the inner edge of the first sub-definition pattern 211.
  • the pixel defining pattern may be a ring structure, and then the first sub-defining pattern and the second sub-defining pattern are both annular structures.
  • the pixel defining pattern 21 may be a square ring structure.
  • the pixel defining pattern may also be a circular or elliptical ring structure, and the embodiment of the present disclosure does not do this. limited.
  • FIG. 2-2 is a cross-sectional view of a pixel defining pattern in the pixel defining layer shown in FIG. 2-1. As shown in FIG. 2-2, the thickness z of the first sub-defining pattern 211 is greater than that of the second sub-defining pattern 212. Thickness x.
  • the thickness of the light emitting layer is greater than the thickness x of the second sub-definition pattern, and the thickness of the light emitting layer is smaller than the first
  • the sub-defining pattern has a thickness z, that is, the illuminating layer is higher than the highest point of the second sub-defining pattern and lower than the highest point of the first sub-defining pattern, wherein the region surrounded by the second sub-defining pattern is the illuminating layer Light emitting area.
  • the pixel defining layer provided by the embodiment of the present disclosure includes a plurality of pixel defining patterns, each pixel defining pattern includes a first sub-defining pattern and a second sub-defining pattern, and the second sub-defining pattern has a thickness smaller than
  • the first sub-defining the thickness of the pattern when performing inkjet printing, can control the ink to pass the highest point of the second sub-definition pattern and lower than the highest point of the first sub-definition pattern, so that the climbing or climbing phenomenon occurs in the first A sub-defined sidewall of the pattern, at which time the liquid level of the intermediate region surrounded by the second sub-pixel defining pattern is relatively flush, since the light-emitting region of the finally formed luminescent layer is the middle surrounded by the second sub-definition pattern
  • the uniformity of the thickness of the region and the intermediate region is high. Therefore, the uniformity of the thickness of the light-emitting region of the light-emitting layer is high, so that the uniformity of the display brightness of the display panel can be ensured
  • the second sub-definition pattern 212 is an annular substrate, and the annular substrate is nested in the first sub-definition pattern 211, and the outer edge of the annular substrate Connected to the inner edge of the first sub-definition pattern 211.
  • the sum of the widths of the first sub-definition pattern and the second sub-definition pattern may be the same as the width of the pixel defining layer in the related art (for example, the width of the pixel defining layer in the related art may be 40 to 60 ⁇ m). That is, the light-emitting area of the light-emitting layer surrounded by the second sub-definition pattern is the same as the area of the area where the light-emitting layer is located in the related art, and thus the other layers of the display panel (for example, the first electrode and Under the premise of the structure of the second electrode or the like, the problem that the uniformity of display brightness of the display panel in the related art is poor is solved.
  • the pixel defining pattern 21 may further include a protruding structure 213 disposed on the second sub-defining pattern 212, the thickness of the protruding structure 213 and the thickness of the second sub-defining pattern x And y is smaller than the thickness z of the first sub-definition pattern.
  • FIG. 2-4 and FIG. 2-5 are top views of the pixel defining patterns shown in FIG. 2-3, respectively.
  • the protruding structure 213 may be a unitary structure, such as a protrusion.
  • the structure may be a closed annular structure that is concentric with the second sub-definition pattern 212; or, as shown in FIGS. 2-5, the raised structure 213 may include a plurality of rows arranged along the extending direction of the second sub-definition pattern 212.
  • the strip structure a which may constitute a non-closed loop structure.
  • the convex structure can be used to identify the depth of the ink sprayed during inkjet printing in the process of forming the light-emitting layer, for example, the sum of the thickness of the convex structure and the thickness of the second sub-definition pattern can be set to be light
  • the thickness of the layer can stop spraying the ink when the ink does not pass through the raised structure.
  • the pixel defining pattern may be made of a photosensitive resin material.
  • the pixel defining layer provided by the embodiment of the present disclosure includes a plurality of pixel defining patterns, each pixel defining pattern includes a first sub-defining pattern and a second sub-defining pattern, and the second sub-defining pattern has a thickness smaller than
  • the first sub-defining the thickness of the pattern when performing inkjet printing, may control the ink not to pass the second sub-definition pattern and lower than the first sub-definition pattern, such that the finally-formed light-emitting region has a second sub-definition pattern
  • the intermediate portion since the thickness uniformity of the intermediate portion is high, the uniformity of the thickness of the light-emitting region of the light-emitting layer is high, so that the uniformity of the display brightness of the display panel can be ensured.
  • An embodiment of the present disclosure provides a display panel, which may include: a substrate substrate and a pixel defining layer disposed on the substrate substrate, and the pixel defining layer may be as shown in FIG. 2-1 to FIG. A pixel is defined as a layer.
  • the display panel includes a base substrate 30 and a pixel defining layer as shown in FIG. 2-2 disposed on the base substrate 30.
  • the display panel may further include: a first electrode 40 disposed between the base substrate 30 and the pixel defining layer 20, and a light emitting layer 50 disposed on a side of the first electrode 40 away from the substrate 30
  • the second electrode 60 wherein, as shown in FIG. 3, the thickness of the light emitting layer 50 is smaller than the thickness of the first sub-definition pattern 211, and the thickness of the light emitting layer 50 is greater than the thickness of the second sub-defining pattern 212, and the light emitting area of the light emitting layer 50 is The second sub-defines the area enclosed by the pattern 212.
  • the polarity of the first electrode and the second electrode are different.
  • the second electrode is a cathode; when the first electrode is a cathode, the second electrode is an anode.
  • the first electrode may include a plurality of sub-electrodes arranged in an array
  • the second electrode may be a unitary structure, or the first electrode may be a unitary structure, and the second electrode includes a plurality of sub-electrodes arranged in an array.
  • the first electrode and the second electrode each include a plurality of sub-electrodes arranged in an array, which are not limited by the embodiment of the present disclosure.
  • the light emitting layer may be an organic light emitting layer or an inorganic light emitting layer.
  • the light-emitting layer (that is, an electroluminescence (EL) layer) may include a hole injection layer, a hole transport layer, a light-emitting material layer, an electron transport layer, and an electron injection layer.
  • the light emitting material layer is an organic light emitting material layer; when the light emitting layer is an inorganic light emitting layer, the light emitting material layer is an inorganic light emitting material layer.
  • the phosphor layer may be a film doped with a quantum dot (QD) material.
  • the QD material may be scatter-emitting under the excitation of incident light, and the display brightness of the display panel may be made. More uniform; on the other hand, QD materials can emit different colors of fluorescence, no need to attach color filters, simplifying the manufacturing process.
  • the display panel provided by the embodiment of the present disclosure may be an OLED display panel or a QLED display panel.
  • the display panel provided by the embodiment of the present disclosure includes a pixel defining layer composed of a plurality of pixel defining patterns, each pixel defining pattern including a first sub-defining pattern and a second sub-defining pattern, and the second sub- Defining the thickness of the pattern is smaller than the thickness of the first sub-definition pattern.
  • the ink When performing inkjet printing, the ink does not pass the highest point of the second sub-definition pattern and is lower than the highest point of the first sub-definition pattern, so that climbing or climbing Appearing on the sidewall of the first sub-definition pattern, at this time, the liquid level of the intermediate region surrounded by the second sub-pixel defining pattern is relatively flush, since the light-emitting region of the finally formed luminescent layer is the second sub-definition pattern
  • the intermediate portion is formed, and the thickness uniformity of the intermediate portion is high. Therefore, the uniformity of the thickness of the light-emitting region of the light-emitting layer is high, so that the uniformity of the display brightness of the display panel can be ensured.
  • Embodiments of the present disclosure provide a display device that can include a display panel as shown in FIG.
  • the display device may further include a thin film transistor (TFT) 70, which is a top gate structure.
  • TFT thin film transistor
  • the TFT may also be a bottom gate structure. The embodiments of the present disclosure do not limit this. Wherein the TFT is used to apply a voltage to the first electrode.
  • the display device provided by the embodiment of the present disclosure may be a top emission type structure, a bottom emission type structure, or an inverted type structure.
  • the display device can be any product or component having a display function such as a liquid crystal panel, an electronic paper, a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, and the like.
  • the display panel can be an OLED display device or a QLED display device.
  • the display device provided by the embodiment of the present disclosure includes a pixel defining layer composed of a plurality of pixel defining patterns, each pixel defining pattern including a first sub-defining pattern and a second sub-defining pattern, and the second sub- Defining the thickness of the pattern is smaller than the thickness of the first sub-definition pattern.
  • the ink When performing inkjet printing, the ink does not pass the highest point of the second sub-definition pattern and is lower than the highest point of the first sub-definition pattern, so that climbing or climbing Appearing on the sidewall of the first sub-definition pattern, at this time, the liquid level of the intermediate region surrounded by the second sub-pixel defining pattern is relatively flush, since the light-emitting region of the finally formed luminescent layer is the second sub-definition pattern
  • the intermediate portion is formed, and the thickness uniformity of the intermediate portion is high. Therefore, the uniformity of the thickness of the light-emitting region of the light-emitting layer is high, so that the uniformity of the display brightness of the display panel can be ensured.
  • Embodiments of the present disclosure provide a method of fabricating a pixel defining layer, which may include:
  • each of the pixel defining patterns includes a first sub-defining pattern and a second sub-defining pattern, and the second sub-defining pattern Nesting is disposed within the first sub-definition pattern, and an outer edge of the second sub-definition pattern is coupled to an inner edge of the first sub-definition pattern, the thickness of the first sub-definition pattern being greater than the thickness of the second sub-definition pattern, the second sub- The area enclosed by the defined pattern is the light-emitting area of the light-emitting layer.
  • the pixel defining pattern may be made of a photosensitive resin material, and the photosensitive resin material may, on the one hand, make the formed pixel defining pattern to function as an insulating layer, and on the other hand, only need to expose and develop in the manufacturing process of the pixel defining pattern. , simplifies the manufacturing process.
  • a specific process of forming a plurality of insulated pixel defining patterns in a matrix on the substrate substrate, as shown in FIG. 5-1, may include:
  • Step 501 forming a pixel defining film layer on the base substrate.
  • a photosensitive resin material having a certain thickness may be coated on the base substrate to obtain a pixel-defining film layer.
  • FIG. 5-2 the structure after forming the pixel defining film layer A on the base substrate 30 is shown.
  • the first electrode 40 is formed on the base substrate 30 before the pixel defining pattern is formed.
  • Step 502 The pixel defining film layer is exposed by using a halftone mask from a side of the pixel defining the film layer away from the substrate.
  • the pixel defining pattern may have multiple structures.
  • the embodiment of the present disclosure is described by taking the pixel defining pattern as shown in FIG. 2-2 and FIG. 2-3 as an example, and correspondingly, as shown in FIG. 2-2.
  • the structure of the halftone mask used in the illustrated pixel defining pattern is different from the structure of the halftone mask used to form the pixel defining pattern as shown in FIGS. 2-3.
  • the photosensitive resin material forming the pixel defining film layer is a positive photoresist as an example.
  • a schematic diagram of exposing a pixel defining thin film layer using a halftone mask (corresponding to the pixel defining pattern shown in FIG. 2-2) may be as shown in FIG. 5-3, and the halftone mask Y1 may include the first a light-transmitting region R1, a second light-transmitting region R2, and a light-shielding region R0, wherein the second light-transmitting region R2 is an annular region, and the first light-transmitting region R1 is a region surrounded by the second light-transmitting region R2, wherein
  • the shade of the tone mask gradation indicates the degree of transparency, and the darker the gradation indicates the greater the transmittance, that is, the shade of the halftone mask corresponds to its orthographic projection on the pixel-defining film layer.
  • the covered pixels define the degree of weakness of the film layer portion to be exposed, and the darker the gray level indicates that the portion of the film layer that needs to be exposed is more exposed, see FIG. 5-3, the transmittance of the first light-transmitting region.
  • the transmittance is greater than the transmittance of the second light-transmitting region, and the light-shielding region is a region around the second light-transmitting region.
  • the process of exposing the pixel defining film layer by using the halftone mask may include:
  • the thickness of the first exposure region (corresponding to the region for forming the light-emitting region of the light-emitting layer) is 0 after development, and the thickness of the second exposure region (corresponding to the second sub-definition pattern) after development is x, x >0.
  • the light shielding area corresponds to the first sub-definition pattern.
  • a schematic diagram of exposing a pixel defining thin film layer using a halftone mask (corresponding to the pixel defining pattern shown in FIG. 2-3) may be as shown in FIG. 5-4, and the halftone mask Y2 includes the first a light-transmitting region R1, a second light-transmitting region R2, a third light-transmitting region R3, and a light-shielding region R0.
  • the second light-transmitting region R2 and the third light-transmitting region R3 form an annular region
  • the first light-transmitting region R1 is a region surrounded by an annular region, wherein the shade of the halftone mask gradation indicates the degree of transmittance, and the darker the gradation indicates the greater the transmittance, that is, the halftone mask gradation
  • the depth corresponding to the pixel covered by the orthographic projection on the pixel-defining film layer defines the intensity of the film layer portion to be exposed, and the darker the gray level indicates that the portion of the film layer that needs to be exposed is more exposed, see Figure 5 - 4, the transmittance of the first transparent region is greater than the transmittance of the second transparent region, the transmittance of the second transparent region is greater than the transmittance of the third transparent region, and the light shielding region is peripheral of the annular region region.
  • the process of exposing the pixel defining film layer by using the halftone mask may include:
  • the thickness of the first exposure region (corresponding to the region for forming the light-emitting region of the light-emitting layer) is 0 after development
  • the thickness of the second exposure region (corresponding to the second sub-definition pattern) after development is x, x>0
  • the thickness of the third exposure region (corresponding to the convex structure) after development is y, y>x>0
  • the light shielding region corresponds to the first sub-definition pattern.
  • Step 503 defining a thin film layer for the exposed pixels to develop.
  • a pixel defining pattern having a predetermined shape can be obtained, for example, a pixel defining thin film layer exposed by a halftone mask Y1 can be subjected to development processing to obtain the image of FIG. 2-2.
  • the pixel defining pattern is shown, and the pixel defining film layer exposed by the halftone mask Y2 can be subjected to development processing to obtain the pixel defining pattern shown in FIG. 2-3.
  • Step 504 Perform a baking process on the developed pixel defining film layer to obtain a pixel defining pattern.
  • the embodiment of the present disclosure provides a method for fabricating a pixel defining layer, the pixel defining layer being fabricated includes a plurality of pixel defining patterns, each pixel defining pattern including a first sub-defining pattern and a second sub-defining pattern, and The thickness of the second sub-definition pattern is smaller than the thickness of the first sub-definition pattern, and when performing inkjet printing, the ink may be controlled not to pass the highest point of the second sub-definition pattern and lower than the highest point of the first sub-definition pattern, so that the The climbing or climbing phenomenon occurs on the sidewall of the first sub-definition pattern.
  • the liquid level of the intermediate region surrounded by the second sub-pixel defining pattern is relatively flush, because the illuminating region of the finally formed luminescent layer is the first
  • the two sub-areas define an intermediate region surrounded by the pattern, and the thickness uniformity of the intermediate portion is high. Therefore, the uniformity of the thickness of the light-emitting region of the light-emitting layer is high, so that the uniformity of the display brightness of the display panel can be ensured.
  • An embodiment of the present disclosure provides a method of manufacturing a display panel. As shown in FIG. 6, the method may include:
  • Step 601 providing a substrate.
  • the substrate may be substantially a transparent substrate, and may be a substrate made of a light-guiding material having a certain hardness such as glass, quartz or a transparent resin and made of a non-metal material.
  • Step 602 forming a first electrode on the base substrate.
  • Step 603 forming a pixel defining layer on the base substrate on which the first electrode is formed.
  • the pixel defining layer comprises a plurality of insulated pixel defining patterns arranged in a matrix, each pixel defining pattern comprises a first sub-defining pattern and a second sub-defining pattern, and the second sub-defining pattern is nested in the first sub-pattern
  • the outer edge of the first sub-definition pattern is connected to the inner edge of the first sub-definition pattern, and the thickness of the first sub-definition pattern is greater than the thickness of the second sub-definition pattern.
  • Step 604 spraying ink immersed in the luminescent material on the substrate substrate on which the pixel defining layer is formed, so that the ink does not pass through the second sub-defining pattern and is lower than the first sub-defining pattern to form the luminescent layer.
  • the light emitting area of the light emitting layer is an area surrounded by the second sub defining pattern.
  • Step 605 forming a second electrode on the base substrate on which the light emitting layer is formed.
  • the polarity of the first electrode and the second electrode are different.
  • the first electrode is an anode
  • the second electrode is a cathode
  • the first electrode is a cathode
  • the second electrode is an anode.
  • the first electrode may include a plurality of sub-electrodes arranged in an array
  • the second electrode may be a unitary structure, or the first electrode may be a unitary structure, and the second electrode includes a plurality of sub-electrodes arranged in an array.
  • the first electrode and the second electrode each include a plurality of sub-electrodes arranged in an array, which are not limited by the embodiment of the present disclosure.
  • the structure of the display panel manufactured by the manufacturing method of the display panel can be as shown in FIG. 3.
  • the embodiment of the present disclosure provides a method for manufacturing a display panel, the display panel including a pixel defining layer composed of a plurality of pixel defining patterns, each pixel defining pattern including a first sub-defining pattern and a second sub-defining a pattern, and the thickness of the second sub-definition pattern is smaller than the thickness of the first sub-definition pattern, the ink does not pass the highest point of the second sub-definition pattern and is lower than the highest point of the first sub-definition pattern when performing inkjet printing, such that The climbing or climbing phenomenon occurs on the sidewall of the first sub-definition pattern.
  • the liquid level of the intermediate region surrounded by the second sub-pixel defining pattern is relatively flush, since the illuminating region of the finally formed luminescent layer is The second sub-division defines an intermediate region surrounded by the pattern, and the thickness uniformity of the intermediate portion is relatively high. Therefore, the uniformity of the thickness of the light-emitting region of the luminescent layer is high, so that uniformity of display brightness of the display panel can be ensured.

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Abstract

提供一种像素界定层及制造方法、显示面板及制造方法、显示装置。像素界定层包括矩阵状排布的多个像素界定图案，其中每个像素界定图案包括第一子界定图案和第二子界定图案，第二子界定图案嵌套设置在第一子界定图案内，且第二子界定图案的外边缘与第一子界定图案的内边缘连接，其中，第一子界定图案的厚度大于第二子界定图案的厚度，第二子界定图案围成的区域为发光层的发光区域。

Description

像素界定层及制造方法、显示面板及制造方法、显示装置
相关申请的交叉引用
本申请要求于2017年8月30日递交的中国专利申请CN201710761649.9的权益，其全部内容通过参考并入本文中。
技术领域
本公开的实施例涉及显示技术领域，特别涉及一种像素界定层及制造方法、显示面板及制造方法、显示装置。
背景技术
自发光的显示面板通常包括阳极、发光层和阴极等，例如自发光的显示面板可以包括量子点发光二极管(Quantum Dot Light Emitting Diodes；简称：QLED)显示面板和有机发光二极管(Organic Light-Emitting Diode；简称：OLED)显示面板等。其中，发光层通常包括空穴注入层、空穴传输层、发光材料层、电子传输层和电子注入层等，发光层通常可以采用溶液法制备，例如采用喷墨打印(Ink-Jet Printing；简称：IJP)技术制造发光层。
在制备发光层的过程中，通常需要先在衬底基板上形成像素界定层，然后将溶解有发光层的材料的墨水喷淋到像素界定层所围成的区域内，待墨水溶剂蒸发后形成发光层。
公开内容
第一方面，提供了一种像素界定层，包括矩阵状排布的多个像素界定图案，其中每个所述像素界定图案包括第一子界定图案和第二子界定图案，所述第二子界定图案嵌套设置在所述第一子界定图案内，且所述第二子界定图案的外边缘与所述第一子界定图案的内边缘连接，
其中，所述第一子界定图案的厚度大于所述第二子界定图案的厚度，所述第二子界定图案围成的区域为发光层的发光区域。
可选的，所述第二子界定图案为环状图案。
可选的，所述第一子界定图案和所述第二子界定图案形成一体结构。
可选的，所述像素界定图案还包括设置在所述第二子界定图案上的凸起结构，所述凸起结构的厚度与所述第二子界定图案的厚度之和小于所述第一子界定图案的厚度。
可选的，每个像素界定图案的凸起结构为一体结构，或者，每个像素界定图案的凸起结构包括沿所述第二子界定图案的延伸方向排布的多个条形结构。
可选的，所述凸起结构与所述第二子界定图案形成一体结构，或者，所述凸起结构、所述第一子界定图案与所述第二子界定图案形成一体结构。
可选的，多个像素界定图案彼此绝缘。
第二方面，提供了一种像素界定层的制造方法，包括：
形成矩阵状排布的多个像素界定图案；
其中，每个所述像素界定图案包括第一子界定图案和第二子界定图案，所述第二子界定图案嵌套设置在所述第一子界定图案内，且所述第二子界定图案的外边缘与所述第一子界定图案的内边缘连接，所述第一子界定图案的厚度大于所述第二子界定图案的厚度，所述第二子界定图案围成的区域为发光层的发光区域。
可选的，所述像素界定图案由感光树脂材料制成，所述形成矩阵状排布的多个像素界定图案包括：
形成像素界定薄膜层；
采用半色调掩膜版对所述像素界定薄膜层进行曝光；
对曝光后的所述像素界定薄膜层进行显影；
对显影后的所述像素界定薄膜层进行烘烤处理，以得到所述像素界定图案。
可选的，所述半色调掩膜版包括第一透光区域、第二透光区域和遮光区域，所述第二透光区域为环状区域，所述第一透光区域为所述第二透光区域围成的区域，且所述第一透光区域的透光度大于所述第二透光区域的透光度，所述遮光区域为所述第二透光区域外围的区域，所述采用半色调掩膜版对所述像素界定薄膜层进行曝光包括：
通过所述半色调掩膜版的第一透光区域和第二透光区域对所述像素界定薄膜层进行曝光，使曝光后的像素界定薄膜层形成与所述第一透光区域对应的第一曝光区域，以及与所述第二透光区域对应的第二曝光区域；
其中，所述第一曝光区域在显影后的厚度为0，所述第二曝光区域在显影后的厚度为x，x＞0。
可选的，所述半色调掩膜版包括第一透光区域、第二透光区域、第三透光区域和遮光区域，
所述第二透光区域和所述第三透光区域组成一环状区域，所述第一透光区域为所述环状区域围成的区域，所述第二透光区域围绕所述第三透光区域，所述第一透光区域的透光度大于所述第二透光区域的透光度，所述第二透光区域的透光度大于所述第三透光区域的透光度，所述遮光区域为所述环状区域外围的区域，所述采用半色调掩膜版对所述像素界定薄膜层进行曝光包括：
通过所述半色调掩膜版的第一透光区域、第二透光区域和第三透光区域对所述像素界定薄膜层进行曝光，使曝光后的像素界定薄膜层形成与所述第一透光区域对应的第一曝光区域、与所述第二透光区域对应的第二曝光区域以及与所述第三透光区域对应的第三曝光区域；
其中，所述第一曝光区域在显影后的厚度为0，所述第二曝光区域在显影后的厚度为x，所述第三曝光区域在显影后的厚度为y，y＞x＞0。
第三方面，提供了一种显示面板，包括：衬底基板以及设置在所述衬底基板上的如第一方面任一所述的像素界定层。
可选的，所述显示面板还包括：设置在所述衬底基板和所述像素界定层之间的第一电极，以及层叠设置在所述第一电极远离所述衬底基板一侧的发光层和第二电极，
其中，所述发光层的厚度小于所述第一子界定图案的厚度，且所述发光层的厚度大于所述第二子界定图案的厚度。
可选的，所述发光层为有机发光层或无机发光层。
第四方面，提供了一种显示面板的制造方法，包括：
提供一衬底基板；
在所述衬底基板上形成第一电极；
在形成有所述第一电极的所述衬底基板上形成像素界定层，其中，所述像素界定层包括矩阵状排布的多个像素界定图案，每个所述像素界定图案包括第一子界定图案和第二子界定图案，所述第二子界定图案嵌套设置在所述第一子界定图案内，且所述第二子界定图案的外边缘与所述第一子界定图案的内边缘 连接，所述第一子界定图案的厚度大于所述第二子界定图案的厚度；
在形成有所述像素界定层的衬底基板上喷淋溶解有发光材料的墨水，使所述墨水没过所述第二子界定图案，且低于所述第一子界定图案，以形成发光层，所述发光层的发光区域为所述第二子界定图案所围成的区域；以及
在形成有所述发光层的所述衬底基板上形成第二电极。
第五方面，提供了一种显示装置，包括：第三方面任一所述的显示面板。
可选的，所述显示装置还包括薄膜晶体管，所述薄膜晶体管为顶栅结构或底栅结构。
可选的，所述显示装置为顶发射型结构、底发射型结构或倒置型结构。
附图说明
图1是相关技术中的一种自发光的显示装置的结构示意图；
图2-1是本公开的实施例提供的一种像素界定层的结构示意图；
图2-2是图2-1所示的像素界定层中的一个像素界定图案的截面图；
图2-3是本公开的实施例提供的另一种像素界定图案的截面图；
图2-4是图2-3所示的像素界定图案的一种俯视图；
图2-5是图2-3所示的像素界定图案的另一种俯视图；
图3是本公开的实施例提供的一种显示面板的结构示意图；
图4是本公开的实施例提供的一种显示装置的结构示意图；
图5-1是本公开的实施例提供的一种形成像素界定图案的方法流程图；
图5-2示出在衬底基板上形成像素界定薄膜层后的结构；
图5-3是本公开的实施例的采用半色调掩膜版对像素界定薄膜层进行曝光的示意图；
图5-4是本公开的另一个实施例的采用半色调掩膜版对像素界定薄膜层进行曝光的示意图；
图6是本公开的实施例提供的一种显示面板的制造方法的流程图。
具体实施方式
为使本公开的实施例的目的、技术方案和优点更加清楚，下面将结合附图对本公开的实施方式作进一步地详细描述。
自发光的显示器(例如QLED显示器和OLED显示器)相对于液晶显示器具有自发光、反应快、视角广、亮度高、色彩艳和轻薄等优点，制造电致发光器件中的膜层的方法主要有真空蒸镀和溶液制程两种。真空蒸镀适用于有机小分子材料的成膜，具有成膜均匀性好和技术相对成熟的优点。溶液制程包括旋涂、喷墨打印和喷嘴涂覆法等方法，其中，喷墨打印技术由于其材料利用率较高、可以实现大尺寸化，被认为是大尺寸QLED和OLED实现量产的方式。喷墨打印技术需要预先在形成有第一电极的衬底基板上形成像素界定层，以限定喷墨打印的溶液能够精确地流入指定的R/G/B亚像素区。在制备发光层的过程中，通常需要先在衬底基板上形成像素界定层，然后将溶解有发光层的材料的墨水喷淋到像素界定层所围成的区域内，待墨水溶剂蒸发后形成发光层。
但是，由于墨水会在像素界定层上攀爬，使得像素界定层限定的发光区域中的边缘区域(靠近像素界定层)的厚度大于中间区域的厚度，待墨水溶剂蒸发形成发光层后，会出现咖啡环(coffee ring)现象，导致发光层的发光区域厚度不均一，从而会导致显示面板的显示亮度的均一性较差。
具体地，自发光的显示装置的结构示意图可以如图1所示，像素界定层11的截面呈“正置”的梯形，由于喷墨打印的溶液与像素界定层11的接触处存在表面能差异、以及像素界定层11的侧面具有一定的倾斜角度，溶液在像素界定层11上会有一定程度的攀爬，导致溶剂干燥后形成的发光层12出现边缘厚中间薄的现象，也即是咖啡环效应，导致发光层的厚度不均一，从而导致显示面板的显示亮度的均一性较差。
本公开的实施例提供了一种像素界定层及制造方法、显示面板及制造方法、显示装置，可以解决相关技术中发光层的发光区域厚度不均一，导致显示面板的显示亮度的均一性较差的问题。
如图2-1所示，该像素界定层20包括：
设置在衬底基板上的矩阵状排布的多个绝缘的像素界定图案21，每个像素界定图案21包括第一子界定图案211和第二子界定图案212，该第二子界定图案212嵌套设置在第一子界定图案211内，且第二子界定图案212的外边缘与第一子界定图案211的内边缘连接。
可选的，像素界定图案可以为环状结构，则第一子界定图案和第二子界定图案均为环状结构。示例的，如图2-1所示，像素界定图案21可以为方形环状 结构，实际应用中，像素界定图案也可以为圆形或椭圆形环状结构，本公开的实施例对此不做限定。
图2-2为图2-1所示的像素界定层中的一个像素界定图案的截面图，如图2-2所示，第一子界定图案211的厚度z大于第二子界定图案212的厚度x。
需要说明的是，在形成有如图2-1所示的像素界定层的衬底基板上形成发光层时，发光层的厚度大于第二子界定图案的厚度x，且发光层的厚度小于第一子界定图案的厚度z，也即是，发光层高于第二子界定图案的最高点且低于第一子界定图案的最高点，其中，第二子界定图案围成的区域为发光层的发光区域。
综上所述，本公开的实施例提供的像素界定层，包括多个像素界定图案，每个像素界定图案包括第一子界定图案和第二子界定图案，且第二子界定图案的厚度小于第一子界定图案的厚度，在进行喷墨打印时，可以控制墨水没过第二子界定图案的最高点且低于第一子界定图案的最高点，使得攀爬或爬坡现象出现在第一子界定图案的侧壁上，此时第二子像素界定图案围成的中间区域的液面会相对保持齐平，由于最终形成的发光层的发光区域为第二子界定图案围成的中间区域，且中间区域的厚度均一性较高，因此，发光层的发光区域的厚度的均一性较高，从而可以保证显示面板的显示亮度的均一性。
可选的，如图2-1所示，该第二子界定图案212为环状衬底，该环状衬底嵌套设置在第一子界定图案211内，且环状衬底的外边缘与第一子界定图案211的内边缘连接。
在本公开的实施例中，第一子界定图案与第二子界定图案的宽度之和可以与相关技术中像素界定层的宽度相同(例如相关技术中像素界定层的宽度可以为40～60微米)，也即是，由第二子界定图案围成的发光层的发光区域与相关技术中发光层所在的区域的面积相同，因此能够在尽量不改变显示面板其他膜层(例如第一电极和第二电极等)的结构的前提下，解决相关技术中显示面板的显示亮度的均一性较差的问题。
进一步的，如图2-3所示，像素界定图案21还可以包括设置在第二子界定图案上212的凸起结构213，该凸起结构213的厚度与第二子界定图案的厚度x之和y小于第一子界定图案的厚度z。
可选的，图2-4和图2-5分别为如图2-3所示的像素界定图案的俯视图，如图2-4所示，该凸起结构213可以为一体结构，例如凸起结构可以为与第二子界 定图案212共中心的封闭环状结构；或者，如图2-5所示，该凸起结构213可以包括沿第二子界定图案212的延伸方向排布的多个条形结构a，该多个条形结构a可以组成非封闭的环状结构。
其中，该凸起结构可以用于在形成发光层的过程中，标识喷墨打印时所喷淋的墨水的深度，例如可以设置凸起结构的厚度与第二子界定图案的厚度之和为发光层的厚度，则当墨水没过该凸起结构时，可以停止喷淋墨水。
可选的，像素界定图案可以由感光树脂材料制成。
综上所述，本公开的实施例提供的像素界定层，包括多个像素界定图案，每个像素界定图案包括第一子界定图案和第二子界定图案，且第二子界定图案的厚度小于第一子界定图案的厚度，在进行喷墨打印时，可以控制墨水没过第二子界定图案且低于第一子界定图案，使得最终形成的发光层的发光区域为第二子界定图案围成的中间区域，由于中间区域的厚度均一性较高，因此，发光层的发光区域的厚度的均一性较高，从而可以保证显示面板的显示亮度的均一性。
本公开的实施例提供了一种显示面板，该显示面板可以包括：衬底基板和设置在衬底基板上的像素界定层，该像素界定层可以为如图2-1至图2-5任一所示的像素界定层。
示例的，如图3所示，显示面板包括衬底基板30和设置在衬底基板30上的如图2-2所示的像素界定层。
进一步的，该显示面板还可以包括：设置在衬底基板30和像素界定层20之间的第一电极40，以及层叠设置在第一电极40远离衬底基板30一侧的发光层50和第二电极60，其中，如图3所示，发光层50的厚度小于第一子界定图案211的厚度，且发光层50的厚度大于第二子界定图案212的厚度，发光层50的发光区域为第二子界定图案212围成的区域。
需要说明的是，第一电极与第二电极的极性不同，当第一电极为阳极时，第二电极为阴极；当第一电极为阴极时，第二电极为阳极。
可选的，第一电极可以包括多个阵列间隔排布的子电极，第二电极可以为一体结构，或者，第一电极可以为一体结构，第二电极包括多个阵列间隔排布的子电极，或者，第一电极和第二电极均包括多个阵列间隔排布的子电极，本 公开的实施例对此不做限定。
可选的，发光层可以为有机发光层或无机发光层。发光层(也即是电致发光(Electroluminescence；简称：EL)层)可以包括空穴注入层、空穴传输层、发光材料层、电子传输层和电子注入层。当该发光层为有机发光层时，发光材料层为有机发光材料层；当该发光层为无机发光层时，发光材料层为无机发光材料层。例如，该无机发光材料层可以为掺杂有量子点(Quantum Dot；简称：QD)材料的膜层，一方面，QD材料在入射光的激发下可以散射式发光，可以使显示面板的显示亮度较为均匀；另一方面，QD材料可以发射不同颜色的荧光，无需贴附彩色滤光片，简化了制造工艺。
示例的，本公开的实施例提供的显示面板可以为OLED显示面板或QLED显示面板。
综上所述，本公开的实施例提供的显示面板，包括由多个像素界定图案组成的像素界定层，每个像素界定图案包括第一子界定图案和第二子界定图案，且第二子界定图案的厚度小于第一子界定图案的厚度，在进行喷墨打印时，墨水没过第二子界定图案的最高点且低于第一子界定图案的最高点，使得攀爬或爬坡现象出现在第一子界定图案的侧壁上，此时第二子像素界定图案围成的中间区域的液面会相对保持齐平，由于最终形成的发光层的发光区域为第二子界定图案围成的中间区域，且中间区域的厚度均一性较高，因此，发光层的发光区域的厚度的均一性较高，从而可以保证显示面板的显示亮度的均一性。
本公开的实施例提供了一种显示装置，该显示装置可以包括如图3所示的显示面板。
进一步的，如图4所示，该显示装置还可以包括薄膜晶体管(Thin Film Transistor；简称：TFT)70，该TFT70为顶栅结构，在本公开的实施例中TFT也可以为底栅结构，本公开的实施例对此不做限定。其中，TFT用于为第一电极加载电压。
可选的，本公开的实施例提供的显示装置可以为顶发射型结构、底发射型结构或倒置型结构。该显示装置可以为液晶面板、电子纸、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。示例地，该显示面板可以为OLED显示装置或QLED显示装置。
综上所述，本公开的实施例提供的显示装置，包括由多个像素界定图案组成的像素界定层，每个像素界定图案包括第一子界定图案和第二子界定图案，且第二子界定图案的厚度小于第一子界定图案的厚度，在进行喷墨打印时，墨水没过第二子界定图案的最高点且低于第一子界定图案的最高点，使得攀爬或爬坡现象出现在第一子界定图案的侧壁上，此时第二子像素界定图案围成的中间区域的液面会相对保持齐平，由于最终形成的发光层的发光区域为第二子界定图案围成的中间区域，且中间区域的厚度均一性较高，因此，发光层的发光区域的厚度的均一性较高，从而可以保证显示面板的显示亮度的均一性。
本公开的实施例提供了一种像素界定层的制造方法，该方法可以包括：
提供一衬底基板；在衬底基板上形成矩阵状排布的多个绝缘的像素界定图案；其中，每个像素界定图案包括第一子界定图案和第二子界定图案，第二子界定图案嵌套设置在第一子界定图案内，且第二子界定图案的外边缘与第一子界定图案的内边缘连接，第一子界定图案的厚度大于第二子界定图案的厚度，第二子界定图案围成的区域为发光层的发光区域。
可选的，像素界定图案可以由感光树脂材料制成，采用感光树脂材料一方面使制成的像素界定图案可以起到绝缘的作用，另一方面在像素界定图案的制造过程中只需曝光显影，简化了制造工艺。
相应的，在衬底基板上形成矩阵状排布的多个绝缘的像素界定图案的具体过程，如图5-1所示，可以包括：
步骤501、在衬底基板上形成像素界定薄膜层。
可选的，可以在衬底基板上涂覆一层具有一定厚度的感光树脂材料，得到像素界定薄膜层。
示例的，参见图5-2，其示出了在衬底基板30上形成像素界定薄膜层A后的结构。
需要说明的是，参见图5-2至图5-4，在形成像素界定图案之前，衬底基板30上形成有第一电极40。
步骤502、从像素界定薄膜层远离衬底基板的一侧，采用半色调掩膜版对像素界定薄膜层进行曝光。
可选的，像素界定图案可以有多种结构，本公开的实施例以如图2-2和图 2-3所示的像素界定图案为例进行说明，相应的，形成如图2-2所示的像素界定图案所采用的半色调掩膜版的结构和形成如图2-3所示的像素界定图案所采用的半色调掩膜版的结构不同。
示例的，在本公开的实施例中，以形成像素界定薄膜层的感光树脂材料为正性光刻胶为例进行说明。
一方面，采用半色调掩膜版对像素界定薄膜层进行曝光的示意图(对应如图2-2所示的像素界定图案)可以如图5-3所示，半色调掩膜版Y1可以包括第一透光区域R1、第二透光区域R2和遮光区域R0，该第二透光区域R2为环状区域，第一透光区域R1为第二透光区域R2围成的区域，其中，半色调掩膜版灰度的深浅表示透光度的大小，且灰度越深表明透光度越大，也即是，半色调掩膜版灰度的深浅对应其在像素界定薄膜层上正投影所覆盖的像素界定薄膜层部分需要被曝光的强弱程度，其灰度越深表明子界定薄膜层部分需要被曝光的程度越强，参见图5-3，第一透光区域的透光度大于第二透光区域的透光度，遮光区域为第二透光区域外围的区域。
相应的，采用半色调掩膜版对像素界定薄膜层进行曝光的过程可以包括：
通过半色调掩膜版的透光区域对像素界定薄膜层进行曝光，使曝光后的像素界定薄膜层形成与第一透光区域对应的第一曝光区域，以及与第二透光区域对应的第二曝光区域。其中，所述第一曝光区域(对应用于形成发光层的发光区域的区域)在显影后的厚度为0，第二曝光区域(对应第二子界定图案)在显影后的厚度为x，x＞0，另外，遮光区域对应第一子界定图案。
另一方面，采用半色调掩膜版对像素界定薄膜层进行曝光的示意图(对应如图2-3所示的像素界定图案)可以如图5-4所示，半色调掩膜版Y2包括第一透光区域R1、第二透光区域R2、第三透光区域R3和遮光区域R0，第二透光区域R2和第三透光区域R3组成一环状区域，第一透光区域R1为环状区域围成的区域，其中，半色调掩膜版灰度的深浅表示透光度的大小，且灰度越深表明透光度越大，也即是，半色调掩膜版灰度的深浅对应其在像素界定薄膜层上正投影所覆盖的像素界定薄膜层部分需要被曝光的强弱程度，其灰度越深表明子界定薄膜层部分需要被曝光的程度越强，参见图5-4，第一透光区域的透光度大于第二透光区域的透光度，第二透光区域的透光度大于第三透光区域的透光度，遮光区域为环状区域外围的区域。
相应的，采用半色调掩膜版对像素界定薄膜层进行曝光的过程可以包括：
通过半色调掩膜版的透光区域对像素界定薄膜层进行曝光，使曝光后的像素界定薄膜层形成与第一透光区域对应的第一曝光区域、与第二透光区域对应的第二曝光区域以及与第三透光区域对应的第三曝光区域。其中，第一曝光区域(对应用于形成发光层的发光区域的区域)在显影后的厚度为0，第二曝光区域(对应第二子界定图案)在显影后的厚度为x，x＞0，第三曝光区域(对应凸起结构)在显影后的厚度为y，y＞x＞0，另外，遮光区域对应第一子界定图案。
步骤503、对曝光后的像素界定薄膜层进行显影。
对包括有多个不同曝光程度的区域的像素界定薄膜层进行显影，能够去除第一曝光区域的感光树脂材料，保留部分曝光区域(第二曝光区域，或，第二曝光区域和第三曝光区域)和遮光区域的感光树脂材料，经过显影处理后能够得到具有预设形状的像素界定图案，例如采用半色调掩膜版Y1曝光后的像素界定薄膜层经过显影处理后能够得到图2-2所示的像素界定图案，采用半色调掩膜版Y2曝光后的像素界定薄膜层经过显影处理后能够得到图2-3所示的像素界定图案。
步骤504、对显影后的像素界定薄膜层进行烘烤处理，以得到像素界定图案。
需要说明的是，本公开的实施例提供的像素界定层的制造方法步骤的先后顺序可以进行适当调整，步骤也可以根据情况进行相应增减，任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，可轻易想到的变化的方法，都应涵盖在本公开的保护范围之内，因此不再赘述。
综上所述，本公开的实施例提供的像素界定层的制造方法，制造的像素界定层包括多个像素界定图案，每个像素界定图案包括第一子界定图案和第二子界定图案，且第二子界定图案的厚度小于第一子界定图案的厚度，在进行喷墨打印时，可以控制墨水没过第二子界定图案的最高点且低于第一子界定图案的最高点，使得攀爬或爬坡现象出现在第一子界定图案的侧壁上，此时第二子像素界定图案围成的中间区域的液面会相对保持齐平，由于最终形成的发光层的发光区域为第二子界定图案围成的中间区域，且中间区域的厚度均一性较高，因此，发光层的发光区域的厚度的均一性较高，从而可以保证显示面板的显示亮度的均一性。
本公开的实施例提供了一种显示面板的制造方法，如图6所示，该方法可以包括：
步骤601、提供一衬底基板。
衬底基本可以为透明基板，其具体可以是采用玻璃、石英、透明树脂等具有一定硬度的导光且非金属材料制成的基板。
步骤602、在衬底基板上形成第一电极。
步骤603、在形成有第一电极的衬底基板上形成像素界定层。
其中，该像素界定层包括矩阵状排布的多个绝缘的像素界定图案，每个像素界定图案包括第一子界定图案和第二子界定图案，第二子界定图案嵌套设置在第一子界定图案内，且第二子界定图案的外边缘与第一子界定图案的内边缘连接，第一子界定图案的厚度大于第二子界定图案的厚度。
步骤604、在形成有像素界定层的衬底基板上喷淋溶解有发光材料的墨水，使墨水没过第二子界定图案，且低于第一子界定图案，以形成发光层。
其中，发光层的发光区域为第二子界定图案所围成的区域。
步骤605、在形成有发光层的衬底基板上形成第二电极。
第一电极与第二电极的极性不同，当第一电极为阳极时，第二电极为阴极；当第一电极为阴极时，第二电极为阳极。
可选的，第一电极可以包括多个阵列间隔排布的子电极，第二电极可以为一体结构，或者，第一电极可以为一体结构，第二电极包括多个阵列间隔排布的子电极，或者，第一电极和第二电极均包括多个阵列间隔排布的子电极，本公开的实施例对此不做限定。
示例的，采用该显示面板的制造方法制造的显示面板的结构可以如图3所示。
综上所述，本公开的实施例提供的显示面板的制造方法，该显示面板包括由多个像素界定图案组成的像素界定层，每个像素界定图案包括第一子界定图案和第二子界定图案，且第二子界定图案的厚度小于第一子界定图案的厚度，在进行喷墨打印时，墨水没过第二子界定图案的最高点且低于第一子界定图案的最高点，使得攀爬或爬坡现象出现在第一子界定图案的侧壁上，此时第二子像素界定图案围成的中间区域的液面会相对保持齐平，由于最终形成的发光层的发光区域为第二子界定图案围成的中间区域，且中间区域的厚度均一性较高， 因此，发光层的发光区域的厚度的均一性较高，从而可以保证显示面板的显示亮度的均一性。
所属领域的技术人员可以清楚地了解到，为描述的方便和简洁，上述方法实施例的具体工作过程可以参考前述装置实施例中各个结构的具体工作过程，在此不再赘述。
以上所述仅为本公开的可选实施例，并不用以限制本公开，凡在本公开的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本公开的保护范围之内。

Claims (18)

  1. 一种像素界定层，包括矩阵状排布的多个像素界定图案，其中每个所述像素界定图案包括第一子界定图案和第二子界定图案，所述第二子界定图案嵌套设置在所述第一子界定图案内，且所述第二子界定图案的外边缘与所述第一子界定图案的内边缘连接，
    其中，所述第一子界定图案的厚度大于所述第二子界定图案的厚度，所述第二子界定图案围成的区域为发光层的发光区域。
  2. 根据权利要求1所述的像素界定层，其中，所述第二子界定图案为环状图案。
  3. 根据权利要求1所述的像素界定层，其中，所述第一子界定图案和所述第二子界定图案形成一体结构。
  4. 根据权利要求1所述的像素界定层，其中，所述像素界定图案还包括设置在所述第二子界定图案上的凸起结构，所述凸起结构的厚度与所述第二子界定图案的厚度之和小于所述第一子界定图案的厚度。
  5. 根据权利要求4所述的像素界定层，其中，
    每个像素界定图案的凸起结构为一体结构，或者，每个像素界定图案的凸起结构包括沿所述第二子界定图案的延伸方向排布的多个条形结构。
  6. 根据权利要求4所述的像素界定层，其中，
    所述凸起结构与所述第二子界定图案形成一体结构，或者，所述凸起结构、所述第一子界定图案与所述第二子界定图案形成一体结构。
  7. 根据权利要求1所述的像素界定层，其中，多个像素界定图案彼此绝缘。
  8. 一种像素界定层的制造方法，包括：
    形成矩阵状排布的多个像素界定图案；
    其中，每个所述像素界定图案包括第一子界定图案和第二子界定图案，所述第二子界定图案嵌套设置在所述第一子界定图案内，且所述第二子界定图案的外边缘与所述第一子界定图案的内边缘连接，所述第一子界定图案的厚度大于所述第二子界定图案的厚度，所述第二子界定图案围成的区域为发光层的发光区域。
  9. 根据权利要求8所述的方法，其中，所述像素界定图案由感光树脂材料制成，所述形成矩阵状排布的多个像素界定图案包括：
    形成像素界定薄膜层；
    采用半色调掩膜版对所述像素界定薄膜层进行曝光；
    对曝光后的所述像素界定薄膜层进行显影；
    对显影后的所述像素界定薄膜层进行烘烤处理，以得到所述像素界定图案。
  10. 根据权利要求9所述的方法，其中，所述半色调掩膜版包括第一透光区域、第二透光区域和遮光区域，所述第二透光区域为环状区域，所述第一透光区域为所述第二透光区域围成的区域，且所述第一透光区域的透光度大于所述第二透光区域的透光度，所述遮光区域为所述第二透光区域外围的区域，所述采用半色调掩膜版对所述像素界定薄膜层进行曝光包括：
    通过所述半色调掩膜版的第一透光区域和第二透光区域对所述像素界定薄膜层进行曝光，使曝光后的像素界定薄膜层形成与所述第一透光区域对应的第一曝光区域，以及与所述第二透光区域对应的第二曝光区域；
    其中，所述第一曝光区域在显影后的厚度为0，所述第二曝光区域在显影后的厚度为x，x＞0。
  11. 根据权利要求9所述的方法，其中，所述半色调掩膜版包括第一透光区域、第二透光区域、第三透光区域和遮光区域，
    所述第二透光区域和所述第三透光区域组成一环状区域，所述第一透光区域为所述环状区域围成的区域，所述第二透光区域围绕所述第三透光区域，所述第一透光区域的透光度大于所述第二透光区域的透光度，所述第二透光区域的透光度大于所述第三透光区域的透光度，所述遮光区域为所述环状区域外围 的区域，所述采用半色调掩膜版对所述像素界定薄膜层进行曝光包括：
    通过所述半色调掩膜版的第一透光区域、第二透光区域和第三透光区域对所述像素界定薄膜层进行曝光，使曝光后的像素界定薄膜层形成与所述第一透光区域对应的第一曝光区域、与所述第二透光区域对应的第二曝光区域以及与所述第三透光区域对应的第三曝光区域；
    其中，所述第一曝光区域在显影后的厚度为0，所述第二曝光区域在显影后的厚度为x，所述第三曝光区域在显影后的厚度为y，y＞x＞0。
  12. 一种显示面板，包括：衬底基板以及设置在所述衬底基板上的如权利要求1至7任一所述的像素界定层。
  13. 根据权利要求12所述的显示面板，其中，所述显示面板还包括：设置在所述衬底基板和所述像素界定层之间的第一电极，以及层叠设置在所述第一电极远离所述衬底基板一侧的发光层和第二电极，
    其中，所述发光层的厚度小于所述第一子界定图案的厚度，且所述发光层的厚度大于所述第二子界定图案的厚度。
  14. 根据权利要求13所述的显示面板，其中，
    所述发光层为有机发光层或无机发光层。
  15. 一种显示面板的制造方法，包括：
    提供一衬底基板；
    在所述衬底基板上形成第一电极；
    在形成有所述第一电极的所述衬底基板上形成像素界定层，其中，所述像素界定层包括矩阵状排布的多个像素界定图案，每个所述像素界定图案包括第一子界定图案和第二子界定图案，所述第二子界定图案嵌套设置在所述第一子界定图案内，且所述第二子界定图案的外边缘与所述第一子界定图案的内边缘连接，所述第一子界定图案的厚度大于所述第二子界定图案的厚度；
    在形成有所述像素界定层的衬底基板上喷淋溶解有发光材料的墨水，使所述墨水没过所述第二子界定图案，且低于所述第一子界定图案，以形成发光层， 所述发光层的发光区域为所述第二子界定图案所围成的区域；以及
    在形成有所述发光层的所述衬底基板上形成第二电极。
  16. 一种显示装置，包括：权利要求12至14任一所述的显示面板。
  17. 根据权利要求16所述的显示装置，其中，所述显示装置还包括薄膜晶体管，所述薄膜晶体管为顶栅结构或底栅结构。
  18. 根据权利要求16所述的显示装置，其中，所述显示装置为顶发射型结构、底发射型结构或倒置型结构。
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