WO2019015317A1 - 构图方法和阵列基板的制备方法 - Google Patents

构图方法和阵列基板的制备方法 Download PDF

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Publication number
WO2019015317A1
WO2019015317A1 PCT/CN2018/076373 CN2018076373W WO2019015317A1 WO 2019015317 A1 WO2019015317 A1 WO 2019015317A1 CN 2018076373 W CN2018076373 W CN 2018076373W WO 2019015317 A1 WO2019015317 A1 WO 2019015317A1
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Prior art keywords
layer
pattern
auxiliary layer
patterned
positive photoresist
Prior art date
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Ceased
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PCT/CN2018/076373
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English (en)
French (fr)
Inventor
李伟
周斌
刘军
刘宁
张扬
胡迎宾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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Priority to US16/086,990 priority Critical patent/US11347148B2/en
Publication of WO2019015317A1 publication Critical patent/WO2019015317A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/167—Coating processes; Apparatus therefor from the gas phase, by plasma deposition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Definitions

  • At least one embodiment of the present disclosure is directed to a patterning method and a method of fabricating an array substrate.
  • components such as a black matrix, a pixel electrode, and a light emitting layer are generally prepared by a patterning process.
  • the patterning process includes steps of applying photoresist, exposure, development, and etching.
  • the developing process is mainly used to remove the photoresist remaining on the exposed substrate, and the desired mask pattern is formed in advance for the next etching process.
  • At least one embodiment of the present disclosure provides a patterning method including: sequentially forming a photolithographic auxiliary layer and a positive photoresist layer on a substrate formed with a layer to be patterned; The auxiliary layer film layer and the positive photoresist layer film layer are subjected to a photolithography process to form a photolithographic auxiliary layer pattern and a positive photoresist pattern; through the photolithography auxiliary layer pattern and the positive photoresist pattern Patterning the layer to be patterned; performing ultraviolet illumination on the lithographic auxiliary layer pattern and the positive photoresist pattern, and then removing the lithographic auxiliary layer pattern and the positive photoresist pattern.
  • the lithographic auxiliary layer pattern and the positive photoresist pattern are conformal.
  • the layer to be patterned is an insulating layer
  • the insulating layer is an inorganic insulating layer, an organic insulating layer or a composite insulating layer, and the composite insulating layer includes the lining.
  • the inorganic substrate and the organic insulating layer are sequentially formed on the base substrate.
  • the photolithography process includes exposing and developing the lithographic auxiliary layer film layer and the positive photoresist layer film layer to remove the exposed portion.
  • the lithographic auxiliary layer film layer and the positive photoresist layer film layer are exposed and developing the lithographic auxiliary layer film layer and the positive photoresist layer film layer.
  • the material of the lithographic auxiliary layer pattern includes:
  • Bipyridine compound At least one of them,
  • R1 and R3 are a propyl group, a butyl group, a pentyl group, a hexyl group, a phenyl group or an ether chain; and R2 and R4 are a carboxyl group or a hydroxyl group.
  • the spiropyran compound reacts under the action of ultraviolet light to reduce the between the lithographic auxiliary layer pattern and the layer to be patterned.
  • the spirooxazine compound reacts under the action of ultraviolet light to reduce the adhesion between the lithographic auxiliary layer pattern and the layer to be patterned:
  • the aziridine compound reacts under the action of ultraviolet light to reduce the adhesion between the lithographic auxiliary layer pattern and the layer to be patterned:
  • the bipyridine compound reacts under the action of ultraviolet light to reduce the adhesion between the lithographic auxiliary layer pattern and the layer to be patterned:
  • the material of the lithographic auxiliary layer pattern includes: N-butyl-6-hydroxy spiropyran Or N-butyl-5'-carboxy-5,7-dimethoxyspirobenzoxazine
  • the lithographic auxiliary layer film layer is formed by an evaporation process.
  • patterning the layer to be patterned includes forming a via structure in the layer to be patterned by a plasma dry etching process.
  • the gas forming the plasma includes the following combinations of carbon tetrafluoride and oxygen, carbon tetrafluoride and nitrogen, sulfur hexafluoride and oxygen, and hexafluoride.
  • the material of the organic insulating layer is an acrylic resin having a mass percentage of 10% to 20%, and the mass percentage is 1% to 5% of an unsaturated single.
  • the light intensity of ultraviolet light illumination of the lithographic auxiliary layer pattern and the positive photoresist pattern is 1 to 10 mW/cm 2 .
  • the lithographic auxiliary layer pattern and the positive photoresist pattern are removed by using a stripping solution comprising a mass percentage of 10% to 30%.
  • a stripping solution comprising a mass percentage of 10% to 30%.
  • MEA 2-hydroxyethylamine
  • DMSO dimethyl sulfoxide
  • the material of the positive photoresist pattern is a phenolic resin having a mass percentage of 5% to 30%, and the mass percentage is 2% to 5%.
  • At least one embodiment of the present disclosure further provides a method for fabricating an array substrate, the method comprising: sequentially forming a photolithographic auxiliary layer and a positive photoresist layer on a substrate formed with a layer to be patterned. Performing a photolithography process on the lithographic auxiliary layer film layer and the positive photoresist layer film layer to form a lithographic auxiliary layer pattern and a positive photoresist pattern; through the lithographic auxiliary layer pattern and the Forming the layer to be patterned by a positive photoresist pattern; performing ultraviolet illumination on the lithographic auxiliary layer pattern and the positive photoresist pattern, and then removing the lithographic auxiliary layer pattern and the positive Photoresist pattern.
  • a material of the lithographic auxiliary layer pattern includes:
  • Bipyridine compound At least one of them,
  • R1 and R3 are a propyl group, a butyl group, a pentyl group, a hexyl group, a phenyl group or an ether chain; and R2 and R4 are a carboxyl group or a hydroxyl group.
  • a preparation method wherein the spiropyran compound reacts under the action of ultraviolet light to reduce the lithographic auxiliary layer pattern and the layer to be patterned. Adhesion between:
  • the spirooxazine compound reacts under the action of ultraviolet light to reduce the adhesion between the lithographic auxiliary layer pattern and the layer to be patterned:
  • the aziridine compound reacts under the action of ultraviolet light to reduce the adhesion between the lithographic auxiliary layer pattern and the layer to be patterned:
  • the bipyridine compound reacts under the action of ultraviolet light to reduce the adhesion between the lithographic auxiliary layer pattern and the layer to be patterned:
  • the material of the lithographic auxiliary layer pattern includes: N-butyl-6-hydroxy spiropyran Or N-butyl-5'-carboxy-5,7-dimethoxyspirobenzoxazine
  • patterning the layer to be patterned includes forming a via structure in the layer to be patterned by a plasma dry etching process.
  • At least one embodiment of the present disclosure further provides a method of fabricating, further comprising: forming a first electrode on the layer to be patterned on which the lithographic auxiliary layer pattern and the positive photoresist pattern are removed.
  • the method before forming the layer to be patterned on the substrate, the method further includes forming a thin film transistor on the substrate, the thin film transistor A first source-drain electrode is included, and the first electrode is electrically connected to the first source-drain electrode through the via structure.
  • FIG. 1 is a flowchart of a composition method according to an embodiment of the present disclosure
  • FIG. 2 is a flowchart of a method for preparing an array substrate according to an embodiment of the present disclosure
  • FIG. 3 is a schematic cross-sectional view of an array substrate according to an embodiment of the present disclosure.
  • FIG. 4 is a schematic cross-sectional view of another array substrate according to an embodiment of the present disclosure.
  • 5a-5i are process diagrams of a method of fabricating an array substrate according to an embodiment of the present disclosure.
  • the photolithography process is an indispensable process, and the photolithography process functions as a transfer pattern.
  • the film to be patterned formed on the substrate is cleaned, and then the photoresist is coated on the film, and the photoresist is pre-baked, exposed, developed, and post-baked to form a mask pattern.
  • the film to be patterned is etched using the photoresist as a mask, and the process of stripping the photoresist to form a target pattern.
  • the main component of the photoresist is a polymer containing a photosensitive group. Under ultraviolet light irradiation, the structure of the photosensitive group receiving ultraviolet light changes, resulting in the photosensitive portion and the non-photosensitive portion of the photoresist being The solubility in the developer is different to achieve the transfer of the pattern after development.
  • an inorganic passivation layer (PVX) is usually coated with an organic film layer to protect and planarize, and an electrode is formed on the organic film layer to electrically connect with the source or drain of the thin film transistor.
  • PVX inorganic passivation layer
  • a large adhesion is formed between the photoresist and the organic film layer, so that after the etching process is completed, the photoresist at the via structure is not easily removed, that is, the photoresist remains. phenomenon. Residual photoresist may reduce the yield of the substrate and the display quality of the display device based on the substrate.
  • At least one embodiment of the present disclosure provides a patterning method and a method for fabricating an array substrate, the patterning method and the method for fabricating the array substrate, comprising: forming a photolithographic auxiliary layer and a positive layer sequentially on a substrate formed with a layer to be patterned.
  • a photoresist layer a photolithography auxiliary layer and a positive photoresist layer to perform a photolithography process to form a photolithographic auxiliary layer pattern and a positive photoresist pattern; through the photolithographic auxiliary layer pattern and positive photolithography
  • the glue pattern is patterned by the patterned layer; the lithographic auxiliary layer pattern and the positive photoresist pattern are subjected to ultraviolet light, and then the lithographic auxiliary layer pattern and the positive photoresist pattern are removed.
  • the patterning method and the method for preparing the array substrate prevent the photoresist from remaining by designing the lithographic auxiliary layer pattern, that is, coating a layer of the lithographic auxiliary layer before applying the photoresist, and performing light using the stripping solution.
  • the ultraviolet light unit is added before the peeling of the glue to change the adhesion between the lithographic auxiliary layer pattern and the layer to be patterned, so that the lithographic auxiliary layer pattern is easily peeled off, thereby driving the stripping of the positive photoresist, and further
  • the yield of the array substrate is improved, and the display quality of the display device such as a liquid crystal display (LCD), a light emitting diode (LED), and an organic light emitting diode (OLED) based on the array substrate is also improved.
  • LCD liquid crystal display
  • LED light emitting diode
  • OLED organic light emitting diode
  • FIG. 1 is a flowchart of a composition method according to an embodiment of the present disclosure.
  • the composition method includes the following operation steps S1 to S5:
  • Step S1 providing a base substrate.
  • the base substrate may be a glass substrate, a quartz substrate, a plastic substrate, or the like, that is, the substrate may be a flexible substrate or a rigid substrate.
  • the flexible substrate can be P1, PET, PEN, PES, PU, PMMA, PC, ultra-thin glass, metal foil or a composite flexible substrate containing such materials.
  • the rigid substrate may be a glass, a metal plate, a thick plastic plate or a FRP composite plate.
  • Step S2 sequentially forming a layer to be patterned, a lithographic auxiliary layer, and a positive photoresist layer on the base substrate.
  • the layer to be patterned is an insulating layer, which is an inorganic insulating layer, an organic insulating layer or a composite insulating layer, and the composite insulating layer includes an inorganic insulating layer and an organic insulating layer which are sequentially formed from the base substrate.
  • the layer to be patterned may also be other film layer structures, for example, a passivation layer, a pixel defining layer, etc., all of which can achieve the effect that the positive photoresist is easily removed from the layer to be patterned.
  • the material of the organic insulating layer including the inorganic insulating layer includes silicon nitride (SiN x ), silicon oxide (SiO x ), and silicon oxynitride (SiNO x ).
  • the material of the organic insulating layer is an acrylic resin having a mass percentage of 10% to 20%, an unsaturated monomer molecule having a mass percentage of 1% to 5%, and a mass percentage of 0.1% to 1%.
  • the organic insulating layer has the properties of a negative photoresist.
  • the material of the organic insulating layer is 15% by mass of acrylic resin, 4% by mass of unsaturated monomer molecules, 0.5% by mass of photoinitiator, and mass percentage.
  • the resin material in the organic insulating layer may be replaced by an acrylic resin, a phenol resin, a polyimide resin or a polyvinyl chloride resin, which is not limited herein.
  • the material of the lithographic auxiliary layer corresponding to the organic insulating layer and the inorganic insulating layer may be different, so that the material of the corresponding lithographic auxiliary layer may be selected according to the polarity of the organic insulating layer and the inorganic insulating layer.
  • the insulating layer in contact with the lithographic auxiliary layer will be described as an organic insulating layer as an example.
  • the process of forming the lithographic auxiliary layer film layer includes an evaporation process, and may further include a plasma deposition process or the like.
  • a method of forming the positive photoresist layer film layer includes spin coating, planar shift coating, and the like.
  • Step S3 performing a photolithography process on the lithographic auxiliary layer film layer and the positive photoresist layer film layer to form a lithographic auxiliary layer pattern and a positive photoresist pattern.
  • the material of the lithographic auxiliary layer pattern includes:
  • Aziridine And bipyridine compounds At least one of them,
  • R1 and R3 are a propyl group, a butyl group, a pentyl group, a hexyl group, a phenyl group or an ether chain; and R2 and R4 are a carboxyl group or a hydroxyl group.
  • the material of the lithographic auxiliary layer pattern is: N-butyl-6-hydroxy spiropyran Or N-butyl-5'-carboxy-5,7-dimethoxyspirobenzoxazine Wait.
  • the materials of the various lithographic auxiliary layer patterns described above all have a ring structure, and a ring-opening reaction may occur under ultraviolet light conditions to change the polarity of the materials of the various lithographic auxiliary layer patterns described above, thereby being The degree of bonding between the lithographic auxiliary layer pattern and the layer to be patterned (for example, the insulating layer) to facilitate the peeling of the photoresist.
  • the material of the positive photoresist pattern is a phenolic resin having a mass percentage of 5% to 30%, a diazonaphthoquinone photosensitizer having a mass percentage of 2% to 5%, and a mass percentage of A mixture of 0.1% to 1% of an additive and an organic solvent having a mass percentage of 65% to 80%.
  • the positive photoresist is a phenolic resin having a mass percentage of 25%, a diazonaphthoquinone photosensitizer having a mass percentage of 3.5%, an additive having a mass percentage of 0.5%, and a mass percentage.
  • the photolithography process includes exposing and developing the lithographic auxiliary layer and the positive photoresist layer to remove the exposed portion of the lithographic auxiliary layer and the positive photoresist layer for subsequent processing
  • the layer is patterned to provide a mask pattern.
  • Step S4 patterning the patterned layer.
  • patterning the patterned layer includes forming a via structure in the layer to be patterned using a plasma dry etching process to form a pattern of the layer to be patterned.
  • a gas that forms a plasma when patterned with a patterned layer may include carbon tetrafluoride and oxygen, carbon tetrafluoride and nitrogen, sulfur hexafluoride and oxygen, sulfur hexafluoride, and nitrogen. Any combination of one or more.
  • Step S5 ultraviolet illuminating the lithographic auxiliary layer pattern and the positive photoresist pattern, and then removing the lithographic auxiliary layer pattern and the positive photoresist pattern.
  • the spiropyran compound reacts under ultraviolet light to effect ring opening, thereby changing the lithographic auxiliary layer pattern to reduce the adhesion between the lithographic auxiliary layer pattern and the layer to be patterned:
  • the polarity of the lithographic auxiliary layer pattern can be changed.
  • the spirooxazine compound undergoes the following reaction under ultraviolet light to effect ring opening, thereby changing the lithographic auxiliary layer pattern to reduce the adhesion between the lithographic auxiliary layer pattern and the layer to be patterned:
  • the aziridine compound reacts under the action of ultraviolet light to reduce the adhesion between the lithographic auxiliary layer pattern and the layer to be patterned:
  • the bipyridine compound reacts under the action of ultraviolet light to reduce the adhesion between the lithographic auxiliary layer pattern and the layer to be patterned:
  • the valence of carbon ions which can change the polarity of the lithographic auxiliary layer pattern.
  • the principle of changing the adhesion between the lithographic auxiliary layer pattern and the layer to be patterned by ultraviolet light is as follows.
  • the lithographic auxiliary layer pattern is composed of a photo-isomerized compound, and the photo-isomerized compound undergoes a structural change under ultraviolet light conditions accompanied by a change in polarity.
  • the compound undergoes a ring-opening reaction under ultraviolet light to form a polar trans-ionic structure, thereby causing a decrease in adhesion between the organic film and the photoresist, thereby preventing the occurrence of photoresist residue.
  • the polar trans-ionic structure refers to a structure in which two large groups are respectively located on both sides of the double bond, having a certain polarity and having both a positive valence ion and a negative valence ion.
  • the light intensity of ultraviolet light illumination of the lithographic auxiliary layer pattern and the positive photoresist pattern may be 1 to 10 mW/cm 2 .
  • the light intensity may be 2mW / cm 2, 4mW / cm 2, 6mW / cm 2, 8mW / cm 2 or 10mW / cm 2 and the like.
  • the lithographic auxiliary layer pattern and the positive photoresist pattern are removed using a stripping solution.
  • the stripping solution comprises 10% to 30% by mass of MEA (2-hydroxyethylamine), 40% to 70% by mass of diethylene glycol monobutyl ether, and the mass percentage is 10% to 40% DMSO (dimethyl sulfoxide).
  • MEA 2-hydroxyethylamine
  • DMSO dimethyl sulfoxide
  • the stripping solution comprises 20% by mass of MEA (2-hydroxyethylamine), 60% by mass of diethylene glycol monobutyl ether, and 20% by mass of DMSO ( Dimethyl sulfoxide).
  • MEA 2-hydroxyethylamine
  • DMSO Dimethyl sulfoxide
  • FIG. 2 is a flowchart of a method for fabricating an array substrate according to an embodiment of the present disclosure.
  • the preparation method includes the following operation steps S11 to S15:
  • Step S11 providing a substrate substrate
  • Step S12 sequentially forming a layer to be patterned, a lithographic auxiliary layer, and a positive photoresist layer on the substrate;
  • Step S13 performing a photolithography process on the lithography auxiliary layer and the positive photoresist layer to form a lithographic auxiliary layer pattern and a positive photoresist pattern;
  • Step S14 patterning the patterned layer
  • Step S15 ultraviolet illuminating the lithographic auxiliary layer pattern and the positive photoresist pattern, and then removing the lithographic auxiliary layer pattern and the positive photoresist pattern.
  • a pixel circuit may be formed on the substrate, and the pixel circuit, for example, including a thin film transistor, may further include, for example, a gate line, a data line, or the like.
  • a first electrode may also be formed on the layer to be patterned (eg, an insulating layer).
  • the first electrode is electrically connected to the first source/drain electrode of the thin film transistor through a via structure formed in the insulating layer.
  • a passivation layer may also be formed and a second electrode formed on the passivation layer.
  • the array substrate obtained may be of various types, and the corresponding thin film transistor may be of various types such as a bottom gate thin film transistor, a top gate thin film transistor, or a double gate thin film transistor.
  • the first source/drain electrode is a source or a drain of the thin film transistor, and the structure of the array substrate formed by the above-described preparation method will be described below by taking a thin film transistor as a bottom gate type thin film transistor as an example.
  • FIG. 3 is a schematic structural diagram of a bottom gate type thin film transistor array substrate according to an embodiment of the present disclosure.
  • the thin film transistor array substrate 100 includes: a gate electrode 110 disposed on the base substrate 101, a gate insulating layer 111, an active layer 112, a first source/drain electrode 113, a second source/drain electrode 114, and an insulating layer (including inorganic insulation)
  • the first electrode 107 disposed on the organic insulating layer 103
  • the passivation layer 108 disposed on the first electrode 107 and the second electrode 109 formed on the passivation layer 108.
  • the first electrode 107 is electrically connected to the first source/drain electrode 113 through a via structure formed in the insulating layer (including the inorganic insulating layer 102 and the organic insulating layer 103).
  • the first electrode 107 is a pixel electrode
  • the second electrode 109 is a common electrode, thereby realizing an ADS (Advanced Super-Dimensional Field Conversion) type array substrate.
  • ADS Advanced Super-Dimensional Field Conversion
  • the pixel electrode is formed under the passivation layer and the common electrode is formed over the passivation layer
  • the common electrode may be formed under the passivation layer, and the pixel electrode is formed in the passivation layer. The positional relationship between the two, that is, the two can be changed, and will not be described here.
  • the pixel electrode and the common electrode may also be formed together on the organic film layer and covered by the passivation layer. That is, the first electrode includes both the pixel electrode and the common electrode, and the two electrodes are alternately arranged with each other, and at this time, the second electrode may not be formed on the passivation layer. That is, the pixel electrode and the common electrode are collectively formed on the organic film layer and covered by the passivation layer, thereby realizing an IPS (In-Plane Switching) type array substrate.
  • IPS In-Plane Switching
  • the thin film transistor in the thin film transistor array substrate may also be a top gate type structure.
  • FIG. 4 is a schematic structural diagram of a top gate thin film transistor array substrate according to an embodiment of the present disclosure.
  • the thin film transistor array substrate 100 includes an active layer 112 disposed on the base substrate 101, a first source/drain electrode 113, a second source/drain electrode 114, a gate insulating layer 111, a gate electrode 110, and an insulating layer (including inorganic insulation).
  • the first electrode 107 is electrically connected to the first source/drain electrode 113 through a via structure formed in the insulating layer (including the inorganic insulating layer 102 and the organic insulating layer 103). 4 and FIG. 3 differ in that the gate 110 is above the active layer 112 in FIG.
  • the first electrode may be a common electrode, and the second electrode is a pixel electrode, which will not be described herein.
  • the first electrode may include both the pixel electrode and the common electrode, and the two electrodes are alternately arranged with each other.
  • the second electrode may not be formed on the passivation layer, and no longer Narration.
  • a double-gate thin film transistor array substrate differs from a bottom gate type thin film transistor array substrate in that a further gate is provided on the source/drain electrode layer, and other structures and a bottom gate type thin film transistor are provided.
  • the array substrate is similar and will not be described here.
  • the array substrate formed by the above method can reduce or eliminate the phenomenon of residual photoresist, which can improve the display effect of the display device based on the array substrate.
  • FIGS. 5a-5i are schematic diagrams of processes for fabricating an array substrate according to an embodiment of the present disclosure.
  • a bottom gate thin film transistor is formed on an array substrate as an example.
  • an active layer 112 As shown in FIG. 5a, an active layer 112, a first source/drain electrode 113, a second source/drain electrode 114, a gate insulating layer 111, a gate electrode 110, and an insulating layer (including an inorganic insulating layer 102) are formed on the base substrate 101. And an organic insulating layer 103), and a first opening is formed on the organic insulating layer 103.
  • the material forming the gate electrode may be aluminum (Al), copper (Cu), molybdenum (Mo), chromium (Cr), or the like, or aluminum-copper alloy (AlCu), copper-molybdenum alloy (CuMo), molybdenum aluminum alloy (MoAl). ), aluminum chromium alloy (AlCr), copper chromium alloy (CuCr), molybdenum chromium alloy (MoCr), copper molybdenum aluminum alloy (CuMoAl) and the like.
  • the material of the gate insulating layer may be silicon oxide (SiO x ), silicon oxynitride (SiNO x ), silicon nitride (SiN x ), or the like.
  • the active layer of the thin film transistor is an oxide semiconductor layer, an amorphous silicon semiconductor layer, a polysilicon semiconductor layer, or an organic semiconductor layer.
  • an etch stop layer may be formed between the active layer and the source/drain electrode layer, and the material of the etch stop layer may be silicon oxide (SiO x ), silicon oxynitride (SiNO x ), silicon nitride (SiN). x ) and so on.
  • a lithographic auxiliary layer film layer 1051 is formed on the organic insulating layer 103.
  • the lithographic auxiliary layer film layer 1051 has a thickness of 10 to 100 nm, and further, for example, the lithographic auxiliary layer film layer 1051 The thickness is 20 nm, 40 nm, 60 nm, 80 nm or 100 nm or the like.
  • the lithographic auxiliary layer film layer 1051 is applied by heating steam and vaporizing it by nitrogen.
  • a positive photoresist layer film layer 1061 is coated on the lithographic auxiliary layer film layer 1051. It should be noted that if a negative photoresist is used, the pattern of the photoresist formed after the light is cured, and finally, when the stripping solution is peeled off, the stripping liquid cannot reach the auxiliary peeling layer, and thus the peeling is difficult. If a positive photoresist is used and a pattern of a photoresist is formed by a patterning process, the auxiliary lift-off layer at a position where an opening is required to be formed later is reacted with the developer to be removed, and is not affected elsewhere.
  • the lithographic auxiliary layer film layer 1051 and the positive photoresist film layer 1061 are exposed and developed to remove the lithographic auxiliary layer film layer and the positive photoresist film layer of the exposed and developed portions to form The pattern of the lithographic auxiliary layer 105 and the positive photoresist 106.
  • the pattern includes a second opening formed in the lithographic auxiliary layer 105 and the positive photoresist 106.
  • the inorganic insulating layer 102 is patterned by using the lithography auxiliary layer 105 and the positive photoresist 106 as a mask to form a via structure 115.
  • the via structure 115 and the second opening form a via.
  • the via structure formed in the organic insulating layer or the via structure formed in the composite insulating layer may not be limited herein.
  • the lithographic auxiliary layer and the positive photoresist are subjected to ultraviolet light, and then the lithographic auxiliary layer and the positive photoresist are removed. Since the polarity of the lithographic auxiliary layer is changed, the adhesion between the lithographic auxiliary layer and the insulating layer (for example, the organic insulating layer 103) is weakened, which is advantageous for driving the positive light on the lithographic auxiliary layer. Peeling of the glue.
  • a pattern of the first electrode 107 is formed on the insulating layer from which the lithographic auxiliary layer and the positive photoresist are stripped, and the first electrode 107 passes through the via structure 115 and the first source/drain electrode 113 of the thin film transistor ( The source or drain) is electrically connected.
  • the material of the first electrode may be a transparent conductive layer, for example, ITO (indium tin oxide), IZO (indium zinc oxide), IGZO (indium gallium zinc oxide), conductive resin, graphene film, carbon nanotube film Any one.
  • a passivation layer 108 is formed on the first electrode.
  • the material of the passivation layer 108 may be silicon oxide (SiO x ), silicon oxynitride (SiNO x ) or silicon nitride (SiN x ) or the like.
  • a second electrode 109 is formed on the passivation layer 108.
  • the second electrode 109 may be a transparent conductive layer.
  • the material of the second electrode 109 may be ITO (indium tin oxide), IZO (indium zinc oxide), IGZO (indium gallium zinc oxide), conductive resin, graphene film. Any one of carbon nanotube films.
  • the array substrate formed by the method can be applied to various display devices.
  • the display device can be: a liquid crystal panel, an electronic paper, an OLED panel, a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame. , navigation, etc. Any product or component that has a display function.
  • a lithographic auxiliary layer pattern to prevent photoresist residue, that is, coating a lithographic auxiliary layer film layer before coating the photoresist
  • the ultraviolet light unit is added before the stripping of the photoresist by using the stripping solution to change the adhesion between the lithographic auxiliary layer pattern and the layer to be patterned, so that the lithographic auxiliary layer is easily peeled off, thereby driving the positive photoresist. Peeling to ensure that the photoresist on the layer to be patterned is completely removed;
  • the method for preparing an array substrate improves the yield of the array substrate and the display of the liquid crystal display (LCD), the light emitting diode (LED), and the organic light emitting diode (OLED) based on the array substrate The display quality of the device.
  • LCD liquid crystal display
  • LED light emitting diode
  • OLED organic light emitting diode

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Abstract

一种构图方法和阵列基板的制备方法，该构图方法包括：在形成有待图案化层(102、103)的衬底基板(101)上依次形成光刻辅助层膜层(1051)和正性光刻胶层膜层(1061)；对所述光刻辅助层膜层(1051)和所述正性光刻胶层膜层(1061)进行光刻工艺以形成光刻辅助层图案(105)和正性光刻胶图案(106)；对所述待图案化层(102、103)进行构图；对所述光刻辅助层图案(105)和所述正性光刻胶图案(106)进行紫外光照，然后去除所述光刻辅助层图案(105)和所述正性光刻胶图案(106)。该方法通过光刻辅助层图案(105)以防止光刻胶残留现象的发生，这样提高了阵列基板的良率与基于该阵列基板的液晶显示器(LCD)、发光二极管(LED)以及有机发光二极管(OLED)等显示器件的显示质量。

Description

构图方法和阵列基板的制备方法
本申请要求于2017年7月17日递交的中国专利申请第201710581717.3号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。
技术领域
本公开至少一实施例涉及一种构图方法和阵列基板的制备方法。
背景技术
在制备液晶显示器(LCD)、发光二极管(LED)、有机发光二极管(OLED)等器件的过程中，例如，其包含的黑矩阵、像素电极以及发光层等部件一般会采用构图工艺制备。该构图工艺包括涂覆光刻胶、曝光、显影和刻蚀等步骤。显影工艺主要用于去除曝光后衬底基板上残留的光刻胶，预先形成所需的掩膜图案以便进行下一步的刻蚀工艺。
发明内容
本公开至少一实施例提供一种构图方法，该构图方法包括：在形成有待图案化层的衬底基板上依次形成光刻辅助层膜层和正性光刻胶层膜层；对所述光刻辅助层膜层和所述正性光刻胶层膜层进行光刻工艺以形成光刻辅助层图案和正性光刻胶图案；通过所述光刻辅助层图案和所述正性光刻胶图案对所述待图案化层进行构图；对所述光刻辅助层图案和所述正性光刻胶图案进行紫外光照，然后去除所述光刻辅助层图案和所述正性光刻胶图案。
例如，在本公开至少一实施例提供的构图方法中，所述光刻辅助层图案和所述正性光刻胶图案是共形的。
例如，在本公开至少一实施例提供的构图方法中，待图案化层为绝缘层，所述绝缘层为无机绝缘层、有机绝缘层或者复合绝缘层，所述复合绝缘层包括从所述衬底基板依次形成的无机绝缘层和有机绝缘层。
例如，在本公开至少一实施例提供的构图方法中，所述光刻工艺包括 对所述光刻辅助层膜层和所述正性光刻胶层膜层进行曝光、显影，以去除曝光部分的所述光刻辅助层膜层和所述正性光刻胶层膜层。
例如，在本公开至少一实施例提供的构图方法中，所述光刻辅助层图案的材料包括：
螺吡喃类化合物
Figure PCTCN2018076373-appb-000001
螺噁嗪类化合物
Figure PCTCN2018076373-appb-000002
氮丙啶类化合物
Figure PCTCN2018076373-appb-000003
以及
联吡啶类化合物
Figure PCTCN2018076373-appb-000004
中至少之一，
其中R1、R3为丙基、丁基、戊基、己基、苯基或者醚链；R2、R4为羧基或者羟基。
例如，在本公开至少一实施例提供的构图方法中，所述螺吡喃类化合物在紫外光的作用下进行如下反应以减小所述光刻辅助层图案与所述待图案化层之间的粘附力：
Figure PCTCN2018076373-appb-000005
所述螺噁嗪类化合物在紫外光的作用下进行如下反应以减小所述光刻辅助层图案与所述待图案化层之间的粘附力：
Figure PCTCN2018076373-appb-000006
所述氮丙啶类化合物在紫外光的作用下进行如下反应以减小所述光刻辅助层图案与所述待图案化层之间的粘附力：
Figure PCTCN2018076373-appb-000007
所述联吡啶类化合物在紫外光的作用下进行如下反应以减小所述光刻辅助层图案与所述待图案化层之间的粘附力：
Figure PCTCN2018076373-appb-000008
例如，在本公开至少一实施例提供的构图方法中，所述光刻辅助层图案的材料包括：N-丁基-6-羟基螺吡喃
Figure PCTCN2018076373-appb-000009
或者N-丁基-5’-羧基-5,7-二甲氧基螺苯并噁嗪
Figure PCTCN2018076373-appb-000010
例如，在本公开至少一实施例提供的构图方法中，采用蒸镀工艺形成所述光刻辅助层膜层。
例如，在本公开至少一实施例提供的构图方法中，对所述待图案化层进行构图包括采用等离子体干刻工艺在所述待图案化层中形成过孔结构。
例如，在本公开至少一实施例提供的构图方法中，形成所述等离子体的气体包括下述组合气体四氟化碳和氧气、四氟化碳和氮气、六氟化硫和氧气、六氟化硫和氮气中的任意一种或多种的组合。
例如，在本公开至少一实施例提供的构图方法中，所述有机绝缘层的材料为质量百分含量为10％～20％的亚克力树脂、质量百分含量为1％～5％不饱和单体分子、质量百分含量为0.1％～1％的光引发剂、质量百分含量为0.1％～1％的添加剂以及质量百分含量为75％～90％的有机溶剂形成的混合物。
例如，在本公开至少一实施例提供的构图方法中，对所述光刻辅助层图案和所述正性光刻胶图案进行紫外光照的光强度为1～10mW/cm 2。
例如，在本公开至少一实施例提供的构图方法中，采用剥离液去除所述光刻辅助层图案和所述正性光刻胶图案，所述剥离液包括质量百分含量为10％～30％的2-羟基乙胺(MEA)、质量百分含量为40％～70％的二乙二醇单丁醚以及质量百分含量为10％～40％的二甲亚砜(DMSO)。
例如，在本公开至少一实施例提供的构图方法中，所述正性光刻胶图案的材料为质量百分含量为5％～30％的酚醛树脂、质量百分含量为2％～5％的重氮萘醌类光敏剂、质量百分含量为0.1％～1％的添加剂以及质量百分含量为65％～80％的有机溶剂形成的混合物。
例如，本公开至少一实施例还提供一种阵列基板的制备方法，该制备方法包括：在形成有待图案化层的衬底基板上依次形成光刻辅助层膜层和正性光刻胶层膜层；对所述光刻辅助层膜层和所述正性光刻胶层膜层进行光刻工艺以形成光刻辅助层图案和正性光刻胶图案；通过所述光刻辅助层图案和所述正性光刻胶图案对所述待图案化层进行构图；对所述光刻辅助层图案和所述正性光刻胶图案进行紫外光照，然后去除所述光刻辅助层图案和所述正性光刻胶图案。
例如，在本公开至少一实施例还提供一种制备方法中，所述光刻辅助层图案的材料包括：
螺吡喃类化合物
Figure PCTCN2018076373-appb-000011
螺噁嗪类化合物
Figure PCTCN2018076373-appb-000012
氮丙啶类化合物
Figure PCTCN2018076373-appb-000013
以及
联吡啶类化合物
Figure PCTCN2018076373-appb-000014
中至少之一，
其中R1、R3为丙基、丁基、戊基、己基、苯基或者醚链；R2、R4为羧基或者羟基。
例如，在本公开至少一实施例还提供一种制备方法中，所述螺吡喃类化合物在紫外光的作用下进行如下反应以减小所述光刻辅助层图案与所述待图案化层之间的粘附力：
Figure PCTCN2018076373-appb-000015
所述螺噁嗪类化合物在紫外光的作用下进行如下反应以减小所述光刻辅助层图案与所述待图案化层之间的粘附力：
Figure PCTCN2018076373-appb-000016
所述氮丙啶类化合物在紫外光的作用下进行如下反应以减小所述光刻辅助层图案与所述待图案化层之间的粘附力：
Figure PCTCN2018076373-appb-000017
所述联吡啶类化合物在紫外光的作用下进行如下反应以减小所述光刻辅助层图案与所述待图案化层之间的粘附力：
Figure PCTCN2018076373-appb-000018
例如，在本公开至少一实施例还提供一种制备方法中，所述光刻辅助层图案的材料包括：N-丁基-6-羟基螺吡喃
Figure PCTCN2018076373-appb-000019
或者N-丁基-5’-羧基-5,7-二甲氧基螺苯并噁嗪
Figure PCTCN2018076373-appb-000020
例如，在本公开至少一实施例还提供一种制备方法中，对所述待图案化层进行构图包括采用等离子体干刻工艺在所述待图案化层中形成过孔结构。
例如，本公开至少一实施例还提供一种制备方法还包括：在去除所述光刻辅助层图案和所述正性光刻胶图案的所述待图案化层上形成第一电极。
例如，在本公开至少一实施例还提供一种制备方法中，在所述衬底基板上形成所述待图案化层之前，还包括在所述衬底基板上形成薄膜晶体管，所述薄膜晶体管包括第一源漏电极，所述第一电极通过所述过孔结构与所述第一源漏电极电连接。
附图说明
为了更清楚地说明本公开实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本公开的一些实施例，而非对本公开的限制。
图1为本公开一实施例提供的一种构图方法的流程图；
图2为本公开一实施例提供的一种阵列基板的制备方法的流程图；
图3为本公开一实施例提供的一种阵列基板的截面结构示意图；
图4为本公开一实施例提供的另一种阵列基板的截面结构示意图；以及
图5a-5i为本公开一实施例提供的一种阵列基板的制备方法的过程图。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。基于所描述的本公开的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本公开保护的范围。
除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的术语“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
在阵列基板的制备过程中，光刻工艺是不可或缺的工艺制程，通过光刻工艺起到转移图案的作用。通常，需要对形成在衬底基板上的待构图的薄膜进行清洗，然后在薄膜上涂覆光刻胶，对光刻胶进行前烘、曝光、显影以及后烘等工序以形成掩膜图案，以光刻胶为掩膜对待构图的薄膜进行 刻蚀，和剥离光刻胶的工序以形成目标图案。光刻胶的主要成分是含有光敏性基团的聚合物，在紫外光照射的条件下，接受紫外光照的光敏基团的结构会发生变化，从而导致光刻胶的感光部分和未感光部分在显影液中的溶解性产生差异，以在显影后实现图案的转移。
例如，通常在无机钝化层(PVX)上会涂覆一层有机膜层以起到保护和平坦化的作用，在有机膜层上会形成电极以与薄膜晶体管的源极或者漏极电连接。这样，就需要在有机膜层内形成过孔结构，在形成有过孔结构的有机膜层上会直接涂覆光刻胶，光刻胶直接涂敷在极性与其相似的有机膜层上，会在光刻胶和有机膜层之间形成较大的附着力，从而，在刻蚀工艺完成后，易发生过孔结构处光刻胶不易全部被去除的问题，即出现光刻胶残留的现象。残留的光刻胶可能会降低基板的良率以及基于该基板的显示器件的显示质量。
本公开至少一实施例提供一种构图方法和阵列基板的制备方法，该构图方法和阵列基板的制备方法包括：在形成有待图案化层的衬底基板上依次形成光刻辅助层膜层和正性光刻胶层膜层；对光刻辅助层膜层和正性光刻胶层膜层进行光刻工艺以形成光刻辅助层图案和正性光刻胶图案；通过光刻辅助层图案和正性光刻胶图案对待图案化层进行构图；对光刻辅助层图案和正性光刻胶图案进行紫外光照，然后去除光刻辅助层图案和正性光刻胶图案。该构图方法和阵列基板的制备方法通过设计光刻辅助层图案以防止光刻胶的残留，即在涂覆光刻胶之前先涂布一层光刻辅助层膜层，在采用剥离液进行光刻胶剥离前增加紫外光照单元，以改变光刻辅助层图案和待图案化层之间的粘附力，这样使得光刻辅助层图案易剥离，从而带动了正性光刻胶的剥离，进而提高了阵列基板的良率，同时还提高了基于该阵列基板的液晶显示器(LCD)、发光二极管(LED)以及有机发光二极管(OLED)等显示器件的显示质量。
本公开至少一实施例提供一种构图方法，例如，图1为本公开一实施例提供的一种构图方法的流程图。该构图方法包括以下操作步骤S1～S5：
步骤S1：提供衬底基板。
例如，该衬底基板可以为玻璃基板、石英基板以及塑料基板等，即该衬底基板可以为柔性基板，也可以为刚性基板。例如，柔性基板可以为P1、PET、PEN、PES、PU、PMMA、PC、超薄玻璃、金属箔或者含此类材料 的复合柔性基板。刚性基板可以为玻璃、金属板、厚塑料板或玻璃钢类复合材料板。
步骤S2：在衬底基板上依次形成待图案化层、光刻辅助层膜层和正性光刻胶层膜层。
例如，该待图案化层为绝缘层，该绝缘层为无机绝缘层、有机绝缘层或者复合绝缘层，该复合绝缘层包括从衬底基板上依次形成的无机绝缘层和有机绝缘层。
需要说明的是，该待图案化层还可以是其他的膜层结构，例如，钝化层、像素界定层等，均可以实现正性光刻胶易从待图案化层上移除的效果。
例如，该有机绝缘层的材料包括无机绝缘层的材料包括氮化硅(SiN x)、氧化硅(SiO x)以及氮氧化硅(SiNO x)。
例如，该有机绝缘层的材料为质量百分含量为10％～20％的亚克力树脂、质量百分含量为1％～5％的不饱和单体分子、质量百分含量为0.1％～1％的光引发剂、质量百分含量为0.1％～1％的添加剂以及质量百分含量为75％～90％的有机溶剂形成的混合物。该有机绝缘层具有负性光刻胶的性质。
又例如，该有机绝缘层的材料为质量百分含量为15％的亚克力树脂、质量百分含量为4％不饱和单体分子、质量百分含量为0.5％的光引发剂、质量百分含量为0.5％的添加剂以及质量百分含量为80％的有机溶剂形成的混合物。
例如，该有机绝缘层中的树脂材料还可以替换为丙烯酸类树脂、酚醛树脂、聚酰亚胺树脂或者聚氯乙烯树脂，在此不作限定。
需要说明的是，有机绝缘层和无机绝缘层所对应的光刻辅助层的材料可以不同，所以可以根据有机绝缘层和无机绝缘层的极性来选择相应的光刻辅助层的材料。例如，下述以与光刻辅助层接触的绝缘层为有机绝缘层为例加以说明。
例如，形成该光刻辅助层膜层的工艺包括蒸镀工艺，还可以包括等离子体沉积工艺等。
例如，形成该正性光刻胶层膜层的方法包括旋涂、平面移动涂敷等方式。
步骤S3：对光刻辅助层膜层和正性光刻胶层膜层进行光刻工艺以形成 光刻辅助层图案和正性光刻胶图案。
例如，在本公开的实施例提供的构图方法中，该光刻辅助层图案的材料包括：
螺吡喃类化合物
Figure PCTCN2018076373-appb-000021
螺噁嗪类化合物
Figure PCTCN2018076373-appb-000022
氮丙啶类化合物
Figure PCTCN2018076373-appb-000023
以及联吡啶类化合物
Figure PCTCN2018076373-appb-000024
中的至少之一，
其中R1、R3为丙基、丁基、戊基、己基、苯基或者醚链；R2、R4为羧基或者羟基。
例如，在本公开的实施例提供的构图方法中，该光刻辅助层图案的材料为：N-丁基-6-羟基螺吡喃
Figure PCTCN2018076373-appb-000025
或者N-丁基-5’-羧基-5,7-二甲氧基螺苯并噁嗪
Figure PCTCN2018076373-appb-000026
等。
例如，上述各种光刻辅助层图案的材料都具有环状结构，在紫外光照的条件下均可以发生开环反应，以改变上述各种光刻辅助层图案的材料的极性，从而可以改变光刻辅助层图案与待图案化层(例如，绝缘层)之间的粘结程度，以方便于光刻胶的剥离。
例如，该正性光刻胶图案的材料为质量百分含量为5％～30％的酚醛树脂、质量百分含量为2％～5％的重氮萘醌类光敏剂、质量百分含量为0.1％～1％的添加剂以及质量百分含量为65％～80％的有机溶剂形成的混合物。
例如，该正性光刻胶为质量百分含量为25％的酚醛树脂、质量百分含量为3.5％的重氮萘醌类光敏剂、质量百分含量为0.5％的添加剂以及质量百分含量为71％的有机溶剂形成的混合物。
例如，光刻工艺包括对光刻辅助层膜层和正性光刻胶层膜层进行曝 光、显影，以去除曝光部分的光刻辅助层膜层和正性光刻胶层膜层，以为后续对待图案化层进行构图提供掩膜图案。
步骤S4：对待图案化层进行构图。
例如，对待图案化层进行构图包括采用等离子体干刻工艺在待图案化层中形成过孔结构，以形成待图案化层的图案。
例如，对待图案化层(例如，绝缘层)进行构图时形成等离子体的气体可以包括四氟化碳和氧气、四氟化碳和氮气、六氟化硫和氧气、六氟化硫和氮气的任意一种或多种的组合。
步骤S5：对光刻辅助层图案和正性光刻胶图案进行紫外光照，然后去除光刻辅助层图案和正性光刻胶图案。
例如，螺吡喃类化合物在紫外光的作用下进行如下反应以实现开环，从而改变光刻辅助层图案，以减小光刻辅助层图案与待图案化层之间的粘附力：
Figure PCTCN2018076373-appb-000027
上述反应的机理为：在紫外光照射的条件下，碳氧环上的C-O键断裂，在相邻的C-N环上形成C＝N双键，同时形成正价的氮离子和负价的氧离子，这样就可以改变光刻辅助层图案的极性。
例如，螺噁嗪类化合物在紫外光的作用下进行如下反应实现开环，从而改变光刻辅助层图案，以减小光刻辅助层图案与待图案化层之间的粘附力：
Figure PCTCN2018076373-appb-000028
上述反应的机理为：在紫外光照射的条件下，碳氧氮环上的C-O键断裂，在相邻的C-N环上形成C＝N双键，同时形成正价的氮离子和负价的氧离子，这样就可以改变光刻辅助层图案的极性。
例如，氮丙啶类化合物在紫外光的作用下进行如下反应以减小光刻辅助层图案与待图案化层之间的粘附力：
Figure PCTCN2018076373-appb-000029
上述反应的机理为：在紫外光照射的条件下，碳氮环上的C-C键断裂，形成C＝N双键，同时形成正价的氮离子和负价的碳离子，这样就可以改变光刻辅助层图案的极性。
例如，联吡啶类化合物在紫外光的作用下进行如下反应以减小光刻辅助层图案与待图案化层之间的粘附力：
Figure PCTCN2018076373-appb-000030
上述反应的机理为：在紫外光照射的条件下，左右两侧的碳氮环上的C-C键断裂，在相邻的C-N环上形成C＝N双键，同时形成正价的氮离子和负价的碳离子，这样就可以改变光刻辅助层图案的极性。
例如，经过紫外光照改变光刻辅助层图案和待图案化层之间的粘附力的原理如下。该光刻辅助层图案由光致异构化合物组成，在紫外光照条件下该光致异构化合物会发生结构式的变化，同时伴随着极性的变化。该类化合物在紫外光照条件下发生开环反应，形成极性反式离子结构，从而导致有机膜和光刻胶间的附着力降低，进而防止光刻胶残留现象的发生。
需要说明的是，极性反式离子结构是指两个大的基团分别位于双键的两侧，具有一定的极性且同时带有正价离子和负价离子的结构。
例如，对光刻辅助层图案和正性光刻胶图案进行紫外光照的光强度可以为1～10mW/cm 2。例如，更具体地，该光强度可以为2mW/cm 2、4mW/cm 2、6mW/cm 2、8mW/cm 2或者10mW/cm 2等。
例如，在对光刻辅助层图案和正性光刻胶图案进行紫外光照之后，采用剥离液去除光刻辅助层图案和正性光刻胶图案。
例如，该剥离液包括质量百分含量为10％～30％的MEA(2-羟基乙胺)、质量百分含量为40％～70％的二乙二醇单丁醚以及质量百分含量为10％～40％的DMSO(二甲亚砜)。
又例如，该剥离液包括质量百分含量为20％的MEA(2-羟基乙胺)、质 量百分含量为60％的二乙二醇单丁醚以及质量百分含量为20％的DMSO(二甲亚砜)。
例如，图2为本公开一实施例提供的一种阵列基板的制备方法的流程图。该制备方法包括以下操作步骤S11～S15：
步骤S11：提供衬底基板；
步骤S12：在衬底基板上依次形成待图案化层、光刻辅助层膜层和正性光刻胶层膜层；
步骤S13：对光刻辅助层膜层和正性光刻胶层膜层进行光刻工艺以形成光刻辅助层图案和正性光刻胶图案；
步骤S14：对待图案化层进行构图；
步骤S15：对光刻辅助层图案和正性光刻胶图案进行紫外光照，然后去除光刻辅助层图案和正性光刻胶图案。
该阵列基板的制备方法的详细的制备过程和各个步骤中所用到的材料可以参见上述中的相关描述，在此不再赘述。
例如，在该阵列基板的制备方法中，在形成待图案化层之前，还可以在衬底基板上形成像素电路，该像素电路，例如，包括薄膜晶体管，还可以包括例如栅线、数据线等；在去除光刻辅助层图案和正性光刻胶图案后，还可以在待图案化层(例如，绝缘层)上形成第一电极。例如，第一电极通过形成在绝缘层中的过孔结构与薄膜晶体管的第一源漏电极电连接。
例如，在形成第一电极之后，还可以形成钝化层以及在钝化层上形成第二电极。
例如，所得到的阵列基板可以为各种类型，相应的薄膜晶体管也可以为底栅型薄膜晶体管、顶栅型薄膜晶体管或者双栅型薄膜晶体管等各种类型。该第一源漏电极为薄膜晶体管的源极或者漏极，下面以薄膜晶体管为底栅型薄膜晶体管为例对按照上述制备方法形成的阵列基板的结构加以说明。
例如，图3为本公开的实施例提供的一种底栅型薄膜晶体管阵列基板的结构示意图。该薄膜晶体管阵列基板100包括：设置在衬底基板101上的栅极110、栅绝缘层111、有源层112、第一源漏电极113、第二源漏电极114、绝缘层(包括无机绝缘层102和有机绝缘层103)、设置在有机绝缘层103上的第一电极107和设置在第一电极107上的钝化层108以及形 成在钝化层108上的第二电极109。第一电极107通过形成在绝缘层(包括无机绝缘层102和有机绝缘层103)中的过孔结构与第一源漏电极113电连接。
例如，在图3中，该第一电极107为像素电极，第二电极109为公共电极，由此以实现ADS(高级超维场转换)型阵列基板。
虽然在上述示例中，像素电极形成在钝化层之下，而公共电极形成在钝化层之上，然而也可以将公共电极形成在钝化层之下，而像素电极形成在钝化层之上，也即二者的位置关系可以变换，在此不再赘述。
例如，在另一种实施方式中，像素电极和公共电极还可以共同形成在有机膜层上并被钝化层覆盖。即第一电极同时包括像素电极和公共电极，二者彼此交错设置，此时在钝化层上则可无需再形成第二电极。即像素电极和公共电极共同形成在有机膜层上并被钝化层覆盖，由此以实现IPS(面内切换)型阵列基板。
例如，该薄膜晶体管阵列基板中的薄膜晶体管也可以为顶栅型结构。例如，图4为本公开一实施例提供的一种顶栅型薄膜晶体管阵列基板的结构示意图。该薄膜晶体管阵列基板100包括：设置在衬底基板101上的有源层112、第一源漏电极113、第二源漏电极114、栅绝缘层111、栅极110、绝缘层(包括无机绝缘层102和有机绝缘层103)、设置在有机绝缘层103上的第一电极107和设置在第一电极107上的钝化层108以及形成在钝化层108上的第二电极109。第一电极107通过形成在绝缘层(包括无机绝缘层102和有机绝缘层103)中的过孔结构与第一源漏电极113电连接。图4和图3的不同之处在于在图4中栅极110位于有源层112之上。
例如，与底栅型薄膜晶体管阵列基板类似，第一电极可以为公共电极，第二电极为像素电极，在此不再赘述。
例如，与底栅型薄膜晶体管阵列基板类似，第一电极可以同时包括像素电极和公共电极，二者彼此交错设置，此时则在钝化层上可无需再形成第二电极，在此不再赘述。
例如，对于双栅型薄膜晶体管阵列基板，其与底栅型的薄膜晶体管阵列基板的不同之处在于，在源漏电极层上设置有又一栅极，其他的构造与底栅型的薄膜晶体管阵列基板类似，在此不再赘述。
采用上述方法形成的阵列基板可以减少或者消除光刻胶残留的现象， 这样可以改善基于该阵列基板的显示装置的显示效果。
例如，图5a-5i为本公开的实施例提供的一种阵列基板的制备方法的过程示意图，这里以在阵列基板上形成底栅型薄膜晶体管为例加以说明。
如图5a所示，在衬底基板101上形成有有源层112、第一源漏电极113、第二源漏电极114、栅绝缘层111、栅极110和绝缘层(包括无机绝缘层102和有机绝缘层103)，且在有机绝缘层103上形成有第一开口。
例如，形成栅极的材料可以为铝(Al)、铜(Cu)、钼(Mo)、铬(Cr)等，或铝铜合金(AlCu)、铜钼合金(CuMo)、钼铝合金(MoAl)、铝铬合金(AlCr)、铜铬合金(CuCr)、钼铬合金(MoCr)、铜钼铝合金(CuMoAl)等。
例如，栅绝缘层的材料可以是氧化硅(SiO x)、氮氧化硅(SiNO x)、氮化硅(SiN x)等。
例如，该薄膜晶体管的有源层为氧化物半导体层、非晶硅半导体层、多晶硅半导体层或有机物半导体层。
例如，在有源层和源漏电极层之间还可以形成刻蚀阻挡层，该刻蚀阻挡层的材料可以是氧化硅(SiO x)，氮氧化硅(SiNO x)，氮化硅(SiN x)等。
如图5b所示，在有机绝缘层103上形成光刻辅助层膜层1051，例如，光刻辅助层膜层1051的厚度为10～100nm，进一步地，例如，光刻辅助层膜层1051的厚度为20nm、40nm、60nm、80nm或者100nm等。例如，通过加热蒸汽并通氮气气化的方式涂布光刻辅助层膜层1051。
如图5c所示，在光刻辅助层膜层1051上涂覆正性光刻胶层膜层1061。需要说明的是，如果采用负性光刻胶，光照后形成的光刻胶的图案会固化，最后采用剥离液剥离时，剥离液不能到达辅助剥离层，这样剥离会有难度。如果采用正性光刻胶，采用构图工艺形成光刻胶的图案时，只在后续需要形成开口的位置的辅助剥离层与显影液反应以被去除，其他地方不受影响。
如图5d所示，对光刻辅助层膜层1051和正性光刻胶膜层1061进行曝光、显影，以去除曝光、显影部分的光刻辅助层膜层和正性光刻胶膜层，以形成光刻辅助层105和正性光刻胶106的图案。例如，该图案包括在光刻辅助层105和正性光刻胶106中形成的第二开口。
如图5e所示，以光刻辅助层105和正性光刻胶106为掩膜，对无机绝缘层102进行构图，以形成过孔结构115。该过孔结构115和第二开口形 成通孔。
需要说明的是，在该步骤中也可以是在有机绝缘层中形成的过孔结构，或者在复合绝缘层中形成的过孔结构，在此不作限定。如图5f所示，对光刻辅助层和正性光刻胶进行紫外光照，然后去除光刻辅助层和正性光刻胶。由于光刻辅助层的极性发生了变化，光刻辅助层与绝缘层(例如，有机绝缘层103)之间的粘附力减弱了，这样有利于带动位于光刻辅助层上的正性光刻胶的剥离。
如图5g所示，在剥离掉光刻辅助层和正性光刻胶的绝缘层上形成第一电极107的图案，第一电极107通过过孔结构115与薄膜晶体管的第一源漏电极113(源极或者漏极)电连接。例如，第一电极的材料可以是透明导电层，例如，ITO(氧化铟锡)、IZO(氧化铟锌)、IGZO(氧化铟镓锌)、导电树脂、石墨烯薄膜、碳纳米管薄膜中的任意一种。
如图5h所示，在第一电极上形成钝化层108。例如，钝化层108的材料可以为氧化硅(SiO x)，氮氧化硅(SiNO x)或者氮化硅(SiN x)等。
如图5i所示，在钝化层108上形成有第二电极109。例如，第二电极109可以为透明导电层，例如，第二电极109的材料可以为ITO(氧化铟锡)、IZO(氧化铟锌)、IGZO(氧化铟镓锌)、导电树脂、石墨烯薄膜、碳纳米管薄膜中的任意一种。
例如，通过该方法形成的阵列基板可以应用于各种显示装置中，例如，该显示装置可以为：液晶面板、电子纸、OLED面板、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
本公开至少一实施例提供的一种构图方法和阵列基板的制备方法具有以下至少一项有益效果：
(1)在本公开至少一实施例提供的构图方法中，通过设计光刻辅助层图案以防止光刻胶残留，即在涂覆光刻胶之前涂布一层光刻辅助层膜层，在采用剥离液进行光刻胶剥离前增加紫外光照单元，以改变光刻辅助层图案和待图案化层之间的粘附力，这样使得光刻辅助层易剥离，从而带动正性光刻胶的剥离，以确保待图案化层上的光刻胶被完全去除；
(2)本公开至少一实施例提供的阵列基板的制备方法，提高了阵列基板的良率与基于该阵列基板的液晶显示器(LCD)、发光二极管(LED)以 及有机发光二极管(OLED)等显示器件的显示质量。
有以下几点需要说明：
(1)本公开实施例附图只涉及到与本公开实施例涉及到的结构，其他结构可参考通常设计。
(2)为了清晰起见，在用于描述本公开的实施例的附图中，层或区域的厚度被放大或缩小，即这些附图并非按照实际的比例绘制。可以理解，当诸如层、膜、区域或基板之类的元件被称作位于另一元件“上”或“下”时，该元件可以“直接”位于另一元件“上”或“下”，或者可以存在中间元件。
(3)在不冲突的情况下，本公开的实施例及实施例中的特征可以相互组合以得到新的实施例。
以上所述，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，本公开的保护范围应以所述权利要求的保护范围为准。

Claims (20)

  1. 一种构图方法，包括：
    在形成有待图案化层的衬底基板上依次形成光刻辅助层膜层和正性光刻胶层膜层；
    对所述光刻辅助层膜层和所述正性光刻胶层膜层进行光刻工艺以形成光刻辅助层图案和正性光刻胶图案；
    通过所述光刻辅助层图案和所述正性光刻胶图案对所述待图案化层进行构图；
    对所述光刻辅助层图案和所述正性光刻胶图案进行紫外光照，然后去除所述光刻辅助层图案和所述正性光刻胶图案。
  2. 根据权利要求1所述的构图方法，其中，所述光刻辅助层图案和所述正性光刻胶图案是共形的。
  3. 根据权利要求1或2所述的构图方法，其中，所述待图案化层为绝缘层，所述绝缘层为无机绝缘层、有机绝缘层或者复合绝缘层，所述复合绝缘层包括从所述衬底基板依次形成的无机绝缘层和有机绝缘层。
  4. 根据权利要求1～3中任一项所述的构图方法，其中，所述光刻工艺包括对所述光刻辅助层膜层和所述正性光刻胶层膜层进行曝光、显影，以去除曝光部分的所述光刻辅助层膜层和所述正性光刻胶层膜层。
  5. 根据权利要求1～4中任一项所述的构图方法，其中，所述光刻辅助层图案的材料包括：
    螺吡喃类化合物
    Figure PCTCN2018076373-appb-100001
    螺噁嗪类化合物
    Figure PCTCN2018076373-appb-100002
    氮丙啶类化合物
    Figure PCTCN2018076373-appb-100003
    以及
    联吡啶类化合物
    Figure PCTCN2018076373-appb-100004
    中至少之一，
    其中R1、R3为丙基、丁基、戊基、己基、苯基或者醚链；R2、R4为羧基或者羟基。
  6. 根据权利要求5所述的构图方法，其中，
    所述螺吡喃类化合物在紫外光的作用下进行如下反应以减小所述光刻辅助层图案与所述待图案化层之间的粘附力：
    Figure PCTCN2018076373-appb-100005
    所述螺噁嗪类化合物在紫外光的作用下进行如下反应以减小所述光刻辅助层图案与所述待图案化层之间的粘附力：
    Figure PCTCN2018076373-appb-100006
    所述氮丙啶类化合物在紫外光的作用下进行如下反应以减小所述光刻辅助层图案与所述待图案化层之间的粘附力：
    Figure PCTCN2018076373-appb-100007
    所述联吡啶类化合物在紫外光的作用下进行如下反应以减小所述光刻辅助层图案与所述待图案化层之间的粘附力：
    Figure PCTCN2018076373-appb-100008
  7. 根据权利要求5所述的构图方法，其中，所述光刻辅助层图案的材料包括：N-丁基-6-羟基螺吡喃
    Figure PCTCN2018076373-appb-100009
    或者N-丁基-5’-羧基-5,7- 二甲氧基螺苯并噁嗪
    Figure PCTCN2018076373-appb-100010
  8. 根据权利要求1～7中任一项所述的构图方法，其中，采用蒸镀工艺形成所述光刻辅助层膜层。
  9. 根据权利要求2～7中任一项所述的构图方法，其中，对所述待图案化层进行构图包括采用等离子体干刻工艺在所述待图案化层中形成过孔结构。
  10. 根据权利要求2所述的构图方法，其中，所述有机绝缘层的材料为质量百分含量为10％～20％的亚克力树脂、质量百分含量为1％～5％不饱和单体分子、质量百分含量为0.1％～1％的光引发剂、质量百分含量为0.1％～1％的添加剂以及质量百分含量为75％～90％的有机溶剂形成的混合物。
  11. 根据权利要求1～10中任一项所述的构图方法，其中，对所述光刻辅助层图案和所述正性光刻胶图案进行紫外光照的光强度为1～10mW/cm 2。
  12. 根据权利要求1～11中任一项所述的构图方法，其中，采用剥离液去除所述光刻辅助层图案和所述正性光刻胶图案，所述剥离液包括质量百分含量为10％～30％的2-羟基乙胺(MEA)、质量百分含量为40％～70％的二乙二醇单丁醚以及质量百分含量为10％～40％的二甲亚砜(DMSO)。
  13. 根据权利要求1～12中任一项所述的构图方法，其中，所述正性光刻胶图案的材料为质量百分含量为5％～30％的酚醛树脂、质量百分含量为2％～5％的重氮萘醌类光敏剂、质量百分含量为0.1％～1％的添加剂以及质量百分含量为65％～80％的有机溶剂形成的混合物。
  14. 一种阵列基板的制备方法，包括：
    在形成有待图案化层的衬底基板上依次形成光刻辅助层膜层和正性光刻胶层膜层；
    对所述光刻辅助层膜层和所述正性光刻胶层膜层进行光刻工艺以形成光刻辅助层图案和正性光刻胶图案；
    通过所述光刻辅助层图案和所述正性光刻胶图案对所述待图案化层进行构图；
    对所述光刻辅助层图案和所述正性光刻胶图案进行紫外光照，然后去除所述光刻辅助层图案和所述正性光刻胶图案。
  15. 根据权利要求14所述的制备方法，其中，所述光刻辅助层图案的材料包括：
    螺吡喃类化合物
    Figure PCTCN2018076373-appb-100011
    螺噁嗪类化合物
    Figure PCTCN2018076373-appb-100012
    氮丙啶类化合物
    Figure PCTCN2018076373-appb-100013
    以及
    联吡啶类化合物
    Figure PCTCN2018076373-appb-100014
    中至少之一，
    其中R1、R3为丙基、丁基、戊基、己基、苯基或者醚链；R2、R4为羧基或者羟基。
  16. 根据权利要求15所述的制备方法，其中，
    所述螺吡喃类化合物在紫外光的作用下进行如下反应以减小所述光刻辅助层图案与所述待图案化层之间的粘附力：
    Figure PCTCN2018076373-appb-100015
    所述螺噁嗪类化合物在紫外光的作用下进行如下反应以减小所述光刻辅助层图案与所述待图案化层之间的粘附力：
    Figure PCTCN2018076373-appb-100016
    所述氮丙啶类化合物在紫外光的作用下进行如下反应以减小所述光 刻辅助层图案与所述待图案化层之间的粘附力：
    Figure PCTCN2018076373-appb-100017
    所述联吡啶类化合物在紫外光的作用下进行如下反应以减小所述光刻辅助层图案与所述待图案化层之间的粘附力：
    Figure PCTCN2018076373-appb-100018
  17. 根据权利要求16所述的制备方法，其中，所述光刻辅助层图案的材料包括：N-丁基-6-羟基螺吡喃
    Figure PCTCN2018076373-appb-100019
    或者N-丁基-5’-羧基-5,7-二甲氧基螺苯并噁嗪
    Figure PCTCN2018076373-appb-100020
  18. 根据权利要求14～17中任一项所述的制备方法，其中，对所述待图案化层进行构图包括采用等离子体干刻工艺在所述待图案化层中形成过孔结构。
  19. 根据权利要求18所述的制备方法，还包括：在去除所述光刻辅助层图案和所述正性光刻胶图案的所述待图案化层上形成第一电极。
  20. 根据权利要求19所述的制备方法，其中，在所述衬底基板上形成所述待图案化层之前，还包括在所述衬底基板上形成薄膜晶体管，所述薄膜晶体管包括第一源漏电极，所述第一电极通过所述过孔结构与所述第一源漏电极电连接。
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