CN109270796B - 阵列基板的制备方法 - Google Patents
阵列基板的制备方法 Download PDFInfo
- Publication number
- CN109270796B CN109270796B CN201710581717.3A CN201710581717A CN109270796B CN 109270796 B CN109270796 B CN 109270796B CN 201710581717 A CN201710581717 A CN 201710581717A CN 109270796 B CN109270796 B CN 109270796B
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract
一种阵列基板的制备方法包括:提供衬底基板;在所述衬底基板上依次形成绝缘层、光刻辅助层膜层和正性光刻胶层膜层;对所述光刻辅助层膜层和所述正性光刻胶层膜层进行光刻工艺以形成光刻辅助层和正性光刻胶;对所述绝缘层进行构图;对所述光刻辅助层和所述正性光刻胶进行紫外光照,然后去除所述光刻辅助层和所述正性光刻胶。该方法通过光刻辅助层以防止光刻胶残留,这样提高了阵列基板的良率与基于该阵列基板的LCD及OLED等显示器件的显示质量。
Description
技术领域
本公开的实施例涉及一种阵列基板的制备方法。
背景技术
在液晶显示器(LCD)、发光二极管(LED)、有机发光二极管(OLED)等器件的制作过程中,例如黑矩阵、像素电极以及发光层等部件一般会采用构图工艺制备。该构图工艺包括涂胶、曝光、显影和刻蚀等步骤。显影工艺主要用于去除曝光后的基板上的光刻胶,预先形成所需图形以便进行下一步的刻蚀工艺。
发明内容
本公开至少一实施例提供一种阵列基板的制备方法,该制备方法包括:提供衬底基板;在所述衬底基板上依次形成绝缘层、光刻辅助层膜层和正性光刻胶层膜层;对所述光刻辅助层膜层和所述正性光刻胶层膜层进行光刻工艺以形成光刻辅助层和正性光刻胶;对所述绝缘层进行构图;对所述光刻辅助层和所述正性光刻胶进行紫外光照,然后去除所述光刻辅助层和所述正性光刻胶。
例如,在本公开的实施例提供的制备方法中,所述绝缘层为:无机绝缘层、有机绝缘层或者复合绝缘层,所述复合绝缘层包括从所述衬底基板依次形成的无机绝缘层和有机绝缘层。
例如,在本公开的实施例提供的制备方法中,所述光刻工艺包括对所述光刻辅助层膜层和所述正性光刻胶膜层进行曝光、显影,以去除曝光、显影部分的所述光刻辅助层膜层和所述正性光刻胶膜层。
例如,在本公开的实施例提供的制备方法中,所述光刻辅助层的材料包括:
其中R1、R3为丙基、丁基、戊基、己基、苯基或者醚链;R2、R4为羧基或者羟基。
例如,在本公开的实施例提供的制备方法中,所述螺吡喃类化合物在紫外光的作用下进行如下反应以减小所述光刻辅助层与所述绝缘层之间的粘附力:
所述螺噁嗪类化合物在紫外光的作用下进行如下反应以减小所述光刻辅助层与所述绝缘层之间的粘附力:
所述氮丙啶类化合物在紫外光的作用下进行如下反应以减小所述光刻辅助层与所述绝缘层之间的粘附力:
所述联吡啶类化合物在紫外光的作用下进行如下反应以减小所述光刻辅助层与所述绝缘层之间的粘附力:
例如,在本公开的实施例提供的制备方法中,采用蒸镀工艺形成所述光刻辅助层。
例如,在本公开的实施例提供的制备方法中,对所述绝缘层进行构图包括采用等离子体干刻工艺在所述绝缘层中形成过孔结构。
例如,在本公开的实施例提供的制备方法中,形成所述等离子体的气体包括下述组合气体四氟化碳和氧气、四氟化碳和氮气、六氟化硫和氧气、六氟化硫和氮气中的任意一种或多种的组合。
例如,在本公开的实施例提供的制备方法中,所述有机绝缘层的材料为亚克力树脂,它通过一种负性光刻胶组合物经光刻形成,该光刻胶组合物主要包括质量百分含量为10%~20%的亚克力树脂、1%~5%不饱和单体分子、0.1%~1%的光引发剂、0.1%~1%的添加剂以及75%~90%的有机溶剂形成的混合物。
例如,在本公开的实施例提供的制备方法中,对所述光刻辅助层和所述正性光刻胶进行紫外光照的光强度为1~10mW/cm2。
例如,在本公开的实施例提供的制备方法中,采用剥离液去除所述光刻辅助层和所述正性光刻胶,所述剥离液包括质量百分含量为10%~30%的2-羟基乙胺(MEA)、40%~70%的二乙二醇单丁醚以及10%~40%的二甲亚砜(DMSO)。
例如,在本公开的实施例提供的制备方法中,所述正性光刻胶为质量百分含量为5%~30%的酚醛树脂、2%~5%的重氮萘醌类光敏剂、0.1%~1%的添加剂以及65%~80%的有机溶剂形成的混合物。
例如,本公开的实施例提供的制备方法还可以包括:在去除所述光刻辅助层和所述正性光刻胶的所述绝缘层上形成第一电极。
例如,在本公开的实施例提供的制备方法,在所述衬底基板上形成绝缘层之前,还可以包括在所述衬底基板上形成薄膜晶体管,所述第一电极通过所述过孔结构与所述薄膜晶体管的第一源漏电极电连接。
附图说明
为了更清楚地说明本公开实施例的技术方案,下面将对实施例的附图作简单地介绍,显而易见地,下面描述中的附图仅仅涉及本公开的一些实施例,而非对本公开的限制。
图1为本公开一实施例提供的一种阵列基板的制备方法的流程图;
图2为本公开一实施例提供的一种阵列基板的截面结构示意图;
图3为本公开一实施例提供的另一种阵列基板的截面结构示意图;以及
图4a-4i为本公开一实施例提供的一种阵列基板的制备方法的过程图。
附图标记:
100-阵列基板;101-衬底基板;102-无机绝缘层;103-有机绝缘层;1051-光刻辅助层膜层;1061-正性光刻胶膜层;105-光刻辅助层;106-正性光刻胶;107-第一电极;108-钝化层;109-第二电极;110-栅极;111-栅绝缘层;112-有源层;113-第一源漏电极;114-第二源漏电极;115-过孔结构。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚,下面将结合本公开实施例的附图,对本公开实施例的技术方案进行清楚、完整地描述。显然,所描述的实施例是本公开的一部分实施例,而不是全部的实施例。基于所描述的本公开的实施例,本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例,都属于本公开保护的范围。
除非另外定义,本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性,而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同,而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接,而是可以包括电性的连接,不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系,当被描述对象的绝对位置改变后,则该相对位置关系也可能相应地改变。
在阵列基板的制备过程中,光刻工艺是不可或缺的工艺制程,起到图案转移的作用。通常,需要对形成在基板上的薄膜进行清洗、光刻胶涂覆、前烘、曝光、显影以及后烘等工序以将设计好的掩膜版图案转移到薄膜上,然后经过刻蚀和光刻胶剥离工序形成目标图案。光刻胶的主要成分是含有光敏性基团的聚合物,在紫外光照射的条件下,接受紫外光照的光敏基团的结构会发生变化,从而导致光刻胶感光部分和未感光部分在显影液中的溶解性产生差异,以在显影后实现图案转移。
例如,通常在无机钝化层(PVX)上会涂覆一层有机膜层以起到保护和平坦化的作用,在有机膜层上会形成电极以与薄膜晶体管的源极或者漏极电连接。这样,就需要在有机膜层内形成过孔结构,在形成有过孔结构的平坦层上会直接涂覆光刻胶,光刻胶直接涂敷在极性与其相似的有机膜上,会在光刻胶和有机膜之间形成较大的附着力,从而易发生刻蚀后过孔结构处光刻胶不易剥离干净的问题,即出现光刻胶残留。光刻胶残留可能降低基板的良率以及基于该基板的显示器件的显示质量。
本公开的实施例提供一种阵列基板的制备方法,该制备方法包括:提供衬底基板;在衬底基板上依次形成绝缘层、光刻辅助层和正性光刻胶层;采用光刻辅助层和正性光刻胶层进行光刻工艺以对绝缘层进行构图;在光刻工艺之后,对光刻辅助层和正性光刻胶进行紫外光照,然后去除光刻辅助层和正性光刻胶。该方法通过光刻辅助层以防止光刻胶残留,即在涂覆光刻胶之前涂布一层光刻辅助层,在进入剥离液前增加紫外光照单元,改变光刻辅助层和绝缘层之间的粘附力,这样使得光刻辅助层易剥离,从而带动正性光刻胶的剥离,这样提高了阵列基板的良率与基于该阵列基板的LCD及OLED等显示器件的显示质量。
本公开的实施例提供一种阵列基板的制备方法,例如,图1为本公开一实施例提供的一种阵列基板的制备方法的流程图。该制备方法包括以下操作S1~S5:
S1:提供衬底基板。
例如,该衬底基板可以为玻璃基板、石英基板以及塑料基板等,即该衬底基板可以为柔性基板,也可以为刚性基板。例如,柔性基板可以为P1、PET、PEN、PES、PU、PMMA、PC、超薄玻璃、金属箔或者含此类材料的复合柔性基板。刚性基板可以为玻璃、金属板、厚塑料板或玻璃钢类复合材料板。
S2:在衬底基板上依次形成绝缘层、光刻辅助层膜层和正性光刻胶层膜层。
例如,该绝缘层为无机绝缘层、有机绝缘层以及复合绝缘层,该复合绝缘层包括从衬底基板上依次形成的无机绝缘层和有机绝缘层。
例如,该有机绝缘层的材料包括无机绝缘层的材料包括氮化硅(SiNx)、氧化硅(SiOx)以及氮氧化硅(SiNOx)。
例如,该有机绝缘层的材料为质量百分含量为10%~20%的亚克力树脂、1%~5%不饱和单体分子、0.1%~1%的光引发剂、0.1%~1%的添加剂以及75%~90%的有机溶剂形成的混合物。该有机绝缘层具有负性光刻胶的性质。
又例如,该有机绝缘层的材料为质量百分含量为15%的亚克力树脂、4%不饱和单体分子、0.5%的光引发剂、0.5%的添加剂以及80%的有机溶剂形成的混合物。
例如,该有机绝缘层中的树脂材料还可以替换为丙烯酸类树脂、酚醛树脂、聚酰亚胺树脂或者聚氯乙烯树脂,在此不作限定。
需要说明的是,有机绝缘层和无机绝缘层所对应的光刻辅助层的材料可以不同,所以可以根据有机绝缘层和无机绝缘层的极性来选择相应的光刻辅助层的材料。例如,下述以与光刻辅助层接触的绝缘层为有机绝缘层为例加以说明。
例如,形成光刻辅助层膜层的工艺包括蒸镀工艺,还可以包括等离子体沉积工艺等。
例如,形成正性光刻胶膜层的方法包括旋涂、平面移动涂敷等方式。
S3:对光刻辅助层膜层和正性光刻胶层膜层进行光刻工艺以形成光刻辅助层和正性光刻胶。
例如,在本公开的实施例提供的制备方法中,该光刻辅助层的材料包括:
其中R1、R3为丙基、丁基、戊基、己基、苯基或者醚链;R2、R4为羧基或者羟基。
例如,上述各种光刻辅助层的材料都具有环状结构,在紫外光照的条件下均可以发生开环反应,以改变上述各种光刻辅助层的材料的极性,从而可以改变光刻辅助层与绝缘层之间的粘结程度,以方便于光刻胶的剥离。
例如,该正性光刻胶为质量百分含量为5%~30%的酚醛树脂、2%~5%的重氮萘醌类光敏剂、0.1%~1%的添加剂以及65%~80%的有机溶剂形成的混合物。
例如,该正性光刻胶为质量百分含量为25%的酚醛树脂、3.5%的重氮萘醌类光敏剂、0.5%的添加剂以及71%的有机溶剂形成的混合物。
例如,光刻工艺包括对光刻辅助层和正性光刻胶进行曝光、显影,以去除曝光、显影部分的光刻辅助层和正性光刻胶,以为后续在绝缘层中形成过孔结构提供掩膜图案。
例如,对绝缘层进行构图包括采用等离子体干刻工艺在绝缘层中形成过孔结构,以形成绝缘层的图案。
S4:对绝缘层进行构图。
例如,对绝缘层进行构图时形成等离子体的气体可以包括四氟化碳和氧气、四氟化碳和氮气、六氟化硫和氧气、六氟化硫和氮气的任意一种或多种的组合。
S5:对光刻辅助层和正性光刻胶进行紫外光照,然后去除光刻辅助层和正性光刻胶。
例如,螺吡喃类化合物在紫外光的作用下进行如下反应以实现开环,从而改变光刻辅助层,以减小光刻辅助层与绝缘层之间的粘附力:
上述反应的机理为:在紫外光照射的条件下,碳氧环上的C-O键断裂,在相邻的C-N环上形成C=N双键,同时形成正价的氮离子和负价的氧离子,这样就可以改变光刻辅助层的极性。
例如,螺噁嗪类化合物在紫外光的作用下进行如下反应实现开环,从而改变光刻辅助层,以减小光刻辅助层与绝缘层之间的粘附力:
上述反应的机理为:在紫外光照射的条件下,碳氧氮环上的C-O键断裂,在相邻的C-N环上形成C=N双键,同时形成正价的氮离子和负价的氧离子,这样就可以改变光刻辅助层的极性。
例如,氮丙啶类化合物在紫外光的作用下进行如下反应以减小光刻辅助层与绝缘层之间的粘附力:
上述反应的机理为:在紫外光照射的条件下,碳氮环上的C-C键断裂,形成C=N双键,同时形成正价的氮离子和负价的碳离子,这样就可以改变光刻辅助层的极性。
例如,联吡啶类化合物在紫外光的作用下进行如下反应以减小光刻辅助层与绝缘层之间的粘附力:
上述反应的机理为:在紫外光照射的条件下,左右两侧的碳氮环上的C-C键断裂,在相邻的C-N环上形成C=N双键,同时形成正价的氮离子和负价的碳离子,这样就可以改变光刻辅助层的极性。
例如,经过紫外光照改变光刻辅助层和绝缘层之间的粘附力的原理如下。该光刻辅助层由光致异构化合物组成,在紫外光照条件下该光致异构化合物会发生结构式的变化,同时伴随着极性的变化。该类化合物在紫外光照条件下发生开环反应,形成极性反式离子结构,从而导致有机膜和光刻胶间的附着力降低,进而防止光刻胶残留的发生。
需要说明的是,极性反式离子结构是指两个大的基团分别位于双键的两侧,具有一定的极性且同时带有正价离子和负价离子的结构。
例如,对光刻辅助层和正性光刻胶进行紫外光照的光强度可以为1~10mW/cm2。例如,更具体地,该光强度可以为2mW/cm2、4mW/cm2、6mW/cm2、8mW/cm2或者10mW/cm2等。
例如,在对光刻辅助层和正性光刻胶进行紫外光照之后,采用剥离液去除光刻辅助层和正性光刻胶。
例如,该剥离液包括质量百分含量为10%~30%的MEA(2-羟基乙胺)、40%~70%的二乙二醇单丁醚以及10%~40%的DMSO(二甲亚砜)。
又例如,该剥离液包括质量百分含量为20%的MEA(2-羟基乙胺)、60%的二乙二醇单丁醚以及20%的DMSO(二甲亚砜)。
例如,在形成绝缘层之前,还可以在衬底基板上形成像素电路,该像素电路例如包括薄膜晶体管,还可以包括例如栅线、数据线等;在去除光刻辅助层和正性光刻胶后,还可以在绝缘层上形成第一电极。例如,第一电极通过形成在绝缘层中的上述过孔结构与薄膜晶体管的第一源漏电极电连接。
例如,在形成第一电极之后,还可以形成钝化层以及在钝化层上形成第二电极。
例如,所得到的阵列基板可以为各种类型,相应的薄膜晶体管也可以为底栅型薄膜晶体管、顶栅型薄膜晶体管或者双栅型薄膜晶体管等各种类型。该第一源漏电极为薄膜晶体管的源极或者漏极,下面以薄膜晶体管为底栅型薄膜晶体管为例对按照上述制备方法形成的阵列基板的结构加以说明。
例如,图2为本公开的实施例提供的一种底栅型薄膜晶体管阵列基板的结构示意图。该薄膜晶体管阵列基板100包括:设置在衬底基板101上的栅极110、栅绝缘层111、有源层112、第一源漏电极113、第二源漏电极114、绝缘层(包括无机绝缘层102和有机绝缘层103)、设置在有机绝缘层103上的第一电极107和设置在第一电极107上的钝化层108以及形成在钝化层108上的第二电极109。第一电极107通过形成在绝缘层(包括无机绝缘层102和有机绝缘层103)中的过孔结构与第一源漏电极113电连接。
例如,在图2中,该第一电极107为像素电极,第二电极109为公共电极,由此以实现ADS(高级超维场转换)型阵列基板。
虽然在上述示例中,像素电极形成在钝化层之下,而公共电极形成在钝化层之上,然而也可以将公共电极形成在钝化层之下,而像素电极形成在钝化层之上,也即二者的位置关系可变换,在此不再赘述。
例如,在另一种实施方式中,像素电极和公共电极还可以共同形成在有机膜层上并被钝化层覆盖。即第一电极同时包括像素电极和公共电极,二者彼此交错设置,此时则在钝化层上可无需再形成第二电极。即像素电极和公共电极共同形成在有机膜层上并被钝化层覆盖,由此以实现IPS(面内切换)型阵列基板。
例如,该薄膜晶体管阵列基板中的薄膜晶体管也可以为顶栅型结构。例如,图3为本发明一实施例提供的一种顶栅型薄膜晶体管阵列基板的结构示意图。该薄膜晶体管阵列基板100包括:设置在衬底基板101上的有源层112、第一源漏电极113、第二源漏电极114、栅绝缘层111、栅极110、绝缘层(包括无机绝缘层102和有机绝缘层103)、设置在有机绝缘层103上的第一电极107和设置在第一电极107上的钝化层108以及形成在钝化层108上的第二电极109。第一电极107通过形成在绝缘层(包括无机绝缘层102和有机绝缘层103)中的过孔结构与第一源漏电极113电连接。图3和图2的不同之处在于在图3中栅极110位于有源层112之上。
例如,与底栅型薄膜晶体管阵列基板类似,第一电极可以为公共电极,第二电极为像素电极,在此不再赘述。
例如,与底栅型薄膜晶体管阵列基板类似,第一电极可以同时包括像素电极和公共电极,二者彼此交错设置,此时则在钝化层上可无需再形成第二电极,在此不再赘述。
例如,对于双栅型薄膜晶体管阵列基板,其与底栅型的薄膜晶体管阵列基板的不同之处在于,在源漏电极层上设置有又一栅极,其他的构造与底栅型的薄膜晶体管阵列基板类似,在此不再赘述。
采用上述方法形成的阵列基板可以减少或者消除光刻胶的残留,这样可以改善基于该阵列基板的显示装置的显示效果。
例如,图4a-4h为本公开的实施例提供的一种阵列基板的制备方法的过程示意图,这里以在阵列基板上形成底栅型薄膜晶体管为例加以说明。
如图4a所示,在衬底基板101上形成有有源层112、第一源漏电极113、第二源漏电极114、栅绝缘层111、栅极110和绝缘层(包括无机绝缘层102和有机绝缘层103),有机绝缘层103上形成有第一开口。
例如,形成栅极的材料可以为铝(Al)、铜(Cu)、钼(Mo)、铬(Cr)等,或铝铜合金(AlCu)、铜钼合金(CuMo)、钼铝合金(MoAl)、铝铬合金(AlCr)、铜铬合金(CuCr)、钼铬合金(MoCr)、铜钼铝合金(CuMoAl)等。
例如,栅绝缘层的材料可以是氧化硅(SiOx)、氮氧化硅(SiNOx)、氮化硅(SiNx)等。
例如,该薄膜晶体管的有源层为氧化物半导体层、非晶硅半导体层、多晶硅半导体层或有机物半导体层。
例如,在有源层和源漏电极层之间还可以形成刻蚀阻挡层,该刻蚀阻挡层的材料可以是氧化硅(SiOx),氮氧化硅(SiNOx),氮化硅(SiNx)等。
如图4b所示,在有机绝缘层103上形成光刻辅助层膜层1051,例如,光刻辅助层膜层1051的厚度105为10~100nm,进一步例如,20nm、40nm、60nm、80nm或者100nm等。例如,通过加热蒸汽并通氮气气化的方式涂布光刻辅助层105。
如图4c所示,在光刻辅助层膜层1051上涂覆正性光刻胶膜层1061。需要说明的是,如果采用负性光刻胶,光照后形成的光刻胶的图案会固化,最后采用剥离液剥离时,剥离液不能到达辅助剥离层,这样剥离会有难度。如果采用正性光刻胶,采用构图工艺形成光刻胶的图案时,只在后续需要形成开口的位置的辅助剥离层与显影液反应以被去除,其他地方不受影响。
如图4d所示,对光刻辅助层膜层1051和正性光刻胶膜层1061进行曝光、显影,以去除曝光、显影部分的光刻辅助层膜层和正性光刻胶膜层,以形成光刻辅助层105和正性光刻胶106的图案。例如,该图案包括在光刻辅助层和光刻胶中形成的第二开口。
如图4e所示,以光刻辅助层105和正性光刻胶106为掩膜,对无机绝缘层102进行构图,以形成过孔结构115。过孔结构115和第二开口形成通孔。
需要说明的是,在该步骤中也可以是在有机绝缘层中形成过孔结构,或者在复合绝缘层中形成的过孔结构,在此不作限定。如图4f所示,对光刻辅助层和正性光刻胶进行紫外光照,然后去除光刻辅助层和正性光刻胶。由于光刻辅助层的极性发生了变化,光刻辅助层与绝缘层(例如,有机绝缘层103)之间的粘附力减弱了,这样有利于带动位于光刻辅助层上的正性光刻胶的剥离。
如图4g所示,在剥离掉光刻辅助层和正性光刻胶的绝缘层上形成第一电极107的图案,第一电极107通过过孔结构115与薄膜晶体管的第一源漏电极113(源极或者漏极)电连接。例如,第一电极的材料可以是透明导电层,例如,ITO(氧化铟锡)、IZO(氧化铟锌)、IGZO(氧化铟镓锌)、导电树脂、石墨烯薄膜、碳纳米管薄膜中的任意一种。
如图4h所示,在第一电极上形成钝化层108。例如,钝化层108的材料可以为氧化硅(SiOx),氮氧化硅(SiNOx),氮化硅(SiNx)等。
如图4i所示,在钝化层108上形成有第二电极109。例如,第二电极109可以为透明导电层,例如,ITO(氧化铟锡)、IZO(氧化铟锌)、IGZO(氧化铟镓锌)、导电树脂、石墨烯薄膜、碳纳米管薄膜中的任意一种。
例如,通过该方法形成的阵列基板可以应用于各种显示装置中,例如,该显示装置可以为:液晶面板、电子纸、OLED面板、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
本公开至少一实施例提供的一种阵列基板的制备方法具有以下至少一项有益效果:该方法通过光刻辅助层以防止光刻胶残留,即在涂覆光刻胶之前涂布一层光刻辅助层,在进入剥离液前增加紫外光照单元,改变光刻辅助层和绝缘层之间的粘附力,这样使得光刻辅助层易剥离,从而带动正性光刻胶的剥离。这样提高了阵列基板的良率与基于该阵列基板的LCD及OLED等显示器件的显示质量。
有以下几点需要说明:
(1)本公开实施例附图只涉及到与本公开实施例涉及到的结构,其他结构可参考通常设计。
(2)为了清晰起见,在用于描述本公开的实施例的附图中,层或区域的厚度被放大或缩小,即这些附图并非按照实际的比例绘制。可以理解,当诸如层、膜、区域或基板之类的元件被称作位于另一元件“上”或“下”时,该元件可以“直接”位于另一元件“上”或“下”,或者可以存在中间元件。
(3)在不冲突的情况下,本公开的实施例及实施例中的特征可以相互组合以得到新的实施例。
以上所述,仅为本公开的具体实施方式,但本公开的保护范围并不局限于此,本公开的保护范围应以所述权利要求的保护范围为准。
Claims (15)
1.一种阵列基板的制备方法,包括:
提供衬底基板;
在所述衬底基板上依次形成绝缘层、光刻辅助层膜层和正性光刻胶层膜层;
对所述光刻辅助层膜层和所述正性光刻胶层膜层进行光刻工艺以形成光刻辅助层和正性光刻胶;
对所述绝缘层进行构图;
对所述光刻辅助层和所述正性光刻胶进行紫外光照,然后去除所述光刻辅助层和所述正性光刻胶,其中,所述紫外光照用于改变所述光刻辅助层和所述绝缘层之间的粘附力。
2.根据权利要求1所述的制备方法,其中,所述绝缘层为:无机绝缘层、有机绝缘层或者复合绝缘层,所述复合绝缘层包括从所述衬底基板依次形成的无机绝缘层和有机绝缘层。
3.根据权利要求1所述的制备方法,其中,所述光刻工艺包括对所述光刻辅助层膜层和所述正性光刻胶膜层进行曝光、显影,以去除曝光、显影部分的所述光刻辅助层膜层和所述正性光刻胶膜层。
7.根据权利要求4所述的制备方法,其中,采用蒸镀工艺形成所述光刻辅助层。
8.根据权利要求2所述的制备方法,其中,对所述绝缘层进行构图包括采用等离子体干刻工艺在所述绝缘层中形成过孔结构。
9.根据权利要求8所述的制备方法,其中,形成所述等离子体的气体包括下述组合气体四氟化碳和氧气、四氟化碳和氮气、六氟化硫和氧气以及六氟化硫和氮气中的任意一种或多种的组合。
10.根据权利要求2所述的制备方法,其中,所述有机绝缘层的材料为质量百分含量为10%~20%的亚克力树脂、1%~5%不饱和单体分子、0.1%~1%的光引发剂、0.1%~1%的添加剂以及75%~90%的有机溶剂形成的混合物。
11.根据权利要求1所述的制备方法,其中,对所述光刻辅助层和所述正性光刻胶进行紫外光照的光强度为1~10mW/cm2。
12.根据权利要求1所述的制备方法,其中,采用剥离液去除所述光刻辅助层和所述正性光刻胶,所述剥离液包括质量百分含量为10%~30%的2-羟基乙胺(MEA)、40%~70%的二乙二醇单丁醚以及10%~40%的二甲亚砜(DMSO)。
13.根据权利要求12所述的制备方法,其中,所述正性光刻胶为质量百分含量为5%~30%的酚醛树脂、2%~5%的重氮萘醌类光敏剂、0.1%~1%的添加剂以及65%~80%的有机溶剂形成的混合物。
14.根据权利要求5-13中任一项所述的制备方法,还包括:在去除所述光刻辅助层和所述正性光刻胶的所述绝缘层上形成第一电极。
15.根据权利要求14所述的制备方法,其中,在所述衬底基板上形成绝缘层之前,还包括在所述衬底基板上形成薄膜晶体管,所述第一电极通过对所述绝缘层进行构图形成的在所述绝缘层中的过孔结构与所述薄膜晶体管的第一源漏电极电连接。
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KR100498716B1 (ko) * | 2002-12-13 | 2005-07-01 | 주식회사 하이닉스반도체 | 미세 패턴 형성방법 |
JPWO2004085524A1 (ja) * | 2003-03-25 | 2006-06-29 | 帝人デュポンフィルム株式会社 | 帯電防止性積層ポリエステルフィルム |
CN104216230B (zh) | 2013-06-05 | 2018-06-05 | 中芯国际集成电路制造(上海)有限公司 | 圆筒形掩模板的涂布装置和涂布方法 |
CN104987471B (zh) * | 2013-10-11 | 2017-09-19 | 天津大学 | 高强度光敏感水凝胶的制备方法 |
JP2015135481A (ja) * | 2013-12-20 | 2015-07-27 | 日立化成株式会社 | 感光性樹脂組成物、これを用いた感光性エレメント、レジストパターンの形成方法及びタッチパネルの製造方法 |
CN103969966B (zh) * | 2014-05-15 | 2015-04-15 | 京东方科技集团股份有限公司 | 一种光刻胶的去除方法 |
CN103995441B (zh) * | 2014-06-11 | 2019-05-31 | 深圳市华星光电技术有限公司 | 光阻剥离方法及光阻剥离装置 |
CN104166311B (zh) * | 2014-08-06 | 2019-02-26 | 京东方科技集团股份有限公司 | 一种基板制作方法、平台和基板 |
WO2016052255A1 (ja) * | 2014-09-30 | 2016-04-07 | 富士フイルム株式会社 | Tft基板の製造方法、有機el表示装置及びその製造方法、並びに、液晶表示装置、及びその製造方法 |
JP6404757B2 (ja) * | 2015-03-27 | 2018-10-17 | 信越化学工業株式会社 | レジスト下層膜材料用重合体、レジスト下層膜材料、及びパターン形成方法 |
CN105097840B (zh) | 2015-07-27 | 2018-12-11 | 合肥鑫晟光电科技有限公司 | 一种阵列基板、其制作方法、液晶显示面板及显示装置 |
CN105824202B (zh) * | 2016-05-11 | 2019-10-25 | 上海华虹宏力半导体制造有限公司 | 光刻胶去除方法及半导体器件制作方法 |
CN107422605B (zh) * | 2017-08-02 | 2020-05-05 | 京东方科技集团股份有限公司 | 正性光刻胶组合物、过孔的形成方法、显示基板及显示装置 |
-
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2018
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6495312B1 (en) * | 2001-02-01 | 2002-12-17 | Lsi Logic Corporation | Method and apparatus for removing photoresist edge beads from thin film substrates |
CN103399468A (zh) * | 2013-08-08 | 2013-11-20 | 深圳市华星光电技术有限公司 | 光阻层剥离方法及装置 |
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