WO2019010937A1 - 防噪信号调变电路、调变方法、显示面板及显示装置 - Google Patents

防噪信号调变电路、调变方法、显示面板及显示装置 Download PDF

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Publication number
WO2019010937A1
WO2019010937A1 PCT/CN2018/072567 CN2018072567W WO2019010937A1 WO 2019010937 A1 WO2019010937 A1 WO 2019010937A1 CN 2018072567 W CN2018072567 W CN 2018072567W WO 2019010937 A1 WO2019010937 A1 WO 2019010937A1
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Prior art keywords
signal
thin film
film transistor
frequency
circuit
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PCT/CN2018/072567
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English (en)
French (fr)
Inventor
郑智仁
丁小梁
王鹏鹏
刘伟
韩艳玲
曹学友
张平
Original Assignee
京东方科技集团股份有限公司
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Priority to US16/084,703 priority Critical patent/US11373563B2/en
Publication of WO2019010937A1 publication Critical patent/WO2019010937A1/zh

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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0421—Structural details of the set of electrodes
    • G09G2300/0426—Layout of electrodes and connections
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264—Details of driving circuits
    • G09G2310/0291—Details of output amplifiers or buffers arranged for use in a driving circuit
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/08—Details of timing specific for flat panels, other than clock recovery
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
    • G09G2330/04—Display protection
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
    • G09G2330/06—Handling electromagnetic interferences [EMI], covering emitted as well as received electromagnetic radiation
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
    • G09G2330/08—Fault-tolerant or redundant circuits, or circuits in which repair of defects is prepared
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2360/00—Aspects of the architecture of display systems
    • G09G2360/14—Detecting light within display terminals, e.g. using a single or a plurality of photosensors

Definitions

  • Embodiments of the present disclosure relate to an anti-noise signal modulation circuit, a modulation method, a display panel, and a display device.
  • Signal detection is of great significance in many devices, which not only enables the user to know the true state of the device-related information in time, but also facilitates further processing based on the relevant state.
  • it is generally required to use a characteristic that detects a change in a sensor with an environment, convert the change into a current or a voltage, and input it to a signal processing circuit for correlation signal detection.
  • the integrated detection sensor on the display may be placed at any position on the display; when the detection sensor is far away from the signal processing circuit that processes the detection signal, the detection sensor may be detected using the trace. The signal is transmitted to the signal processing circuit.
  • the inventors have found that the correlation signals acquired in existing devices are difficult to effectively eliminate interference caused by noise signals in the device or in the external environment.
  • An anti-noise signal modulation circuit provided by an embodiment of the present disclosure includes a frequency modulation control sub-circuit.
  • An input end of the frequency modulation control sub-circuit is configured to receive an initial signal, an output end of the frequency modulation control sub-circuit is coupled to a preset signal processing circuit; the frequency modulation control sub-circuit is configured to pass the initial signal
  • the switching signal of the preset period hopping is frequency-modulated, and the modulation result is output to the signal processing circuit; the frequency noise frequencies corresponding to the switching signals do not overlap.
  • the FM control sub-circuit includes a preset periodic signal controlled gate circuit, the gate loop configured to input the initial signal to the signal during a first time period of the preset periodic signal
  • the non-inverting input terminal of the processing circuit inputs the initial signal to the inverting input end of the signal processing circuit during a second period of the preset period signal; the preset reference signal is connected to the first time period
  • the inverting input of the signal processing circuit is coupled to the non-inverting input of the signal processing circuit during a second time period; the reference signal is used as a reference for the initial signal in the signal processing circuit.
  • the frequency modulation control sub-circuit includes a first thin film transistor, a second thin film transistor, a third thin film transistor, and a fourth thin film transistor.
  • the initial signal is coupled to the first pole of the first thin film transistor and the first pole of the second thin film transistor
  • the predetermined reference signal is coupled to the first pole of the third thin film transistor and the first pole of the fourth thin film transistor.
  • the connection between the thin film transistor and the signal processing circuit has at least two connection manners.
  • the first connection manner is: the second pole of the first thin film transistor and the second pole of the third thin film transistor are both connected to the signal processing circuit.
  • the non-inverting input terminal, the second electrode of the second thin film transistor and the second electrode of the fourth thin film transistor are respectively connected to the inverting input terminal of the signal processing circuit.
  • the second connection mode is that the second pole of the first thin film transistor and the second pole of the third thin film transistor are both connected to the inverting input end of the signal processing circuit, the second pole of the second thin film transistor and the fourth thin film transistor The second pole is correspondingly connected to the non-inverting input of the signal processing circuit.
  • the gates of the first thin film transistor and the gate of the fourth thin film transistor are both connected to the first control signal, and the gates of the second thin film transistor and the gate of the third thin film transistor are both connected to the second control signal.
  • the first control signal and the second control signal output a modulated pulse signal having a potential opposite to the first control signal and the second control signal.
  • the first control signal and the second control signal are timing signals having opposite potentials and a period T, wherein the signal frequency 1/T corresponding to the timing signal is different from the noise frequency.
  • the frequency modulation control sub-circuit adopts at least two sets of thin film transistors to form a mirror structure, configured to control the high and low levels in the control signal, so that the initial signal is formed based on the mirror structure to form a current flow in different directions.
  • the frequency modulation control sub-circuit realizes modulation of the initial signal frequency by current flow in different directions.
  • the frequency modulation control sub-circuit includes a fifth thin film transistor, a sixth thin film transistor, a seventh thin film transistor, and an eighth thin film transistor.
  • the first poles of the fifth and sixth thin film transistors of the fifth thin film transistor are both connected to the initial signal, the second pole of the fifth thin film transistor and the first pole of the seventh thin film transistor, the gate of the seventh thin film transistor, and the first The gate of the eight thin film transistor is connected, and the second pole of the seventh thin film transistor is connected to the second pole of the eighth thin film transistor.
  • the first pole of the eighth thin film transistor and the second pole of the sixth thin film transistor are connected to the non-inverting input end of the signal processing circuit, and the preset reference signal is correspondingly connected to the inverting input end of the signal processing circuit; or the eighth thin film transistor
  • the second poles of the first pole and the sixth thin film transistor are connected to the inverting input terminal of the signal processing circuit, and the preset reference signal is correspondingly connected to the non-inverting input terminal of the signal processing circuit.
  • the frequency modulation control signal is directly connected to the gate of the fifth thin film transistor and is connected to the gate of the sixth thin film transistor through an inverter, the switching signal including the frequency modulation control signal.
  • the preset reference signal is a common mode voltage signal that is used to provide a DC voltage level for the circuit op amp.
  • the initial signal is an output signal of the detecting sensor
  • the preset reference signal is an output signal of the same shielding sensor as the detecting sensor
  • the shielding sensor is a sensor in a non-detecting state, configured to eliminate non-detecting in the detecting sensor Signal interference caused by the signal.
  • the signal processing circuit includes an operational amplifier, a first feedback capacitor, a second feedback capacitor, a first reset switch, and a second reset switch; one end of the first feedback capacitor is connected to the non-inverting input of the operational amplifier, The other end of the first feedback capacitor is connected to the non-inverting output of the operational amplifier; one end of the second feedback capacitor is connected to an inverting input of the operational amplifier, and the other end of the second feedback capacitor is connected And an inverting output of the operational amplifier; the first reset switch is connected in parallel with the first feedback capacitor, and the second reset switch is connected in parallel with the second feedback capacitor.
  • the first reset switch and the second reset switch are the same reset switch.
  • the first reset switch and the second reset switch perform a reset after each frequency change or switching of the frequency modulation control signal.
  • the embodiment of the present disclosure further provides an anti-noise signal modulation method, which is applied to the FM control sub-circuit described in any of the above, and includes:
  • the embodiment of the present disclosure further provides a display panel, including a detection sensor, a detection circuit, and a frequency modulation control sub-circuit according to any of the above embodiments.
  • the detecting sensor is connected to an input end of the frequency modulation control sub-circuit, and the detecting circuit is connected to an output end of the frequency modulation control sub-circuit.
  • the frequency modulation control subcircuit is disposed at a position close to the detection sensor.
  • the embodiment of the present disclosure further provides a display device comprising the display panel according to any of the above embodiments.
  • FIG. 1 is a schematic diagram of a connection between a detection sensor and a signal processing circuit on a display according to an embodiment of the present disclosure
  • FIG. 2 is a schematic diagram of signal interference when a detection signal and a noise are at a similar frequency according to an embodiment of the present disclosure
  • FIG. 3 is a schematic diagram of a principle of performing frequency shift processing on a detection signal according to an embodiment of the present disclosure
  • FIG. 4 is a schematic diagram of a first structure of a noise suppression signal modulation circuit according to an embodiment of the present disclosure
  • FIG. 5 is a second schematic structural diagram of a noise suppression signal modulation circuit according to an embodiment of the present disclosure.
  • FIG. 6 is a schematic diagram of an embodiment of a corresponding control signal and a reset signal in FIG. 5;
  • FIG. 7 is a schematic diagram of a third structure of a noise suppression signal modulation circuit according to an embodiment of the present disclosure.
  • FIG. 8 is a schematic diagram of a fourth structure of a noise suppression signal modulation circuit according to an embodiment of the present disclosure.
  • the initial signal since the acquired initial signal needs to be transmitted over a certain distance, the initial signal is interfered by the noise frequency during the transmission process, and the current technology is difficult to effectively eliminate the interference of the noise signal of the similar frequency.
  • both the detection sensor and the signal processing circuit are provided in the device (especially when the detection sensor needs to be connected to the signal processing circuit through a long trace), it may be in various signal transmission processes of the device itself. It causes certain noise interference to the detection signal in the trace. Especially when the noise frequency in the device is close to or the same as the frequency of the detection signal, the noise effect is more serious. Taking the signal detection in the display as an example, referring to FIG.
  • FIG. 1 a schematic diagram of a connection between a detection sensor and a signal processing circuit on a display according to an embodiment of the present disclosure.
  • the detection sensor is an in-plane sensor
  • the signal processing circuit for example, the signal processing circuit is a detection circuit (Detection) Circuit)
  • the signal processing circuit is a detection circuit (Detection) Circuit
  • the embodiment of the present disclosure provides an anti-noise signal modulation circuit, a modulation method, a display panel, and a display device, which can improve the anti-noise ability of the initial signal, increase the signal-to-noise ratio, and enable the subsequent filtering process to effectively eliminate the interference of the noise signal. , to improve the accuracy of the initial signal.
  • FIG. 2 a schematic diagram of signal interference when a detection signal and a noise are at a similar frequency according to an embodiment of the present disclosure.
  • the signal in the figure is the detection signal
  • the filter response shown is the response in the filter band. Since the filtered frequency band and the frequency of the noise overlap, it is difficult to eliminate the noise signal in the detection signal.
  • the embodiment of the present disclosure modulates the detection signal by using a frequency shifting method, so that the detection signal can change the frequency by modulation before the interference, avoiding the noise frequency band in the device, thereby improving the signal to noise ratio.
  • FIG. 3 it is a schematic diagram of a principle of frequency shift processing on a detection signal according to an embodiment of the present disclosure.
  • the frequency of the detection signal is changed by frequency shifting. Therefore, when the detection signal and the noise signal are fused, there is no frequency intersection between the detection signal and the noise signal. In this case, even if the interference signal still exists in the detection signal, based on the frequency difference between the detection signal and the noise signal, the noise can be quickly and effectively filtered by the filtering technique.
  • the noise prevention signal modulation circuit includes a frequency modulation control sub-circuit 102.
  • the input end of the FM control sub-circuit 102 is configured to receive an initial signal 101, and an output end of the FM control sub-circuit is connected to a preset signal processing circuit 103; the FM control sub-circuit 102 is hopped by a preset period
  • the switching signal after frequency-modulating the initial signal 101, outputs the modulation result to the signal processing circuit 103.
  • the frequency corresponding to the switching signal avoids the noise frequency.
  • the initial signal 101 may be either a detection signal obtained by a detection sensor or a detection signal or a non-detection signal obtained in other forms.
  • a detection sensor is disposed in the device for detecting device related information, and an initial signal output by the detection sensor needs to be transmitted to a corresponding signal processing circuit for signal processing.
  • the signal processing circuit is configured to process an initial signal (eg, a detection signal output by the detection sensor) and output it to a corresponding subsequent unit.
  • the noise is signal interference caused by the device related operation or the external related signal during the transmission of the initial signal.
  • a frequency shifting operation of the initial signal is implemented between the initial signal 101 and the signal processing circuit 103 by the frequency modulation control sub-circuit 102 controlled by the switching signal, so that the initial signal outputted from the detecting sensor and the noise signal are at different frequencies. . Therefore, the frequency modulation sub-circuit is generally disposed on one side of the detecting sensor, that is, on the side of the initial signal, and then connected to the signal processing circuit through a trace.
  • the anti-noise signal modulation circuit sets a frequency modulation sub-circuit capable of signal frequency modulation between the initial signal and the signal processing circuit, so that the initial signal is frequency-shifted to the noise frequency by frequency modulation.
  • the correlated noise signal can be quickly and accurately filtered out in subsequent filtering processes.
  • the embodiment of the present disclosure realizes the modulation of the detection signal frequency by switching signals according to the preset period, and only needs to control the period of the switching signal according to the frequency response of the device, that is, the frequency.
  • the frequency shift processing of the initial signal is implemented. In this way, not only the FM control structure is extremely simple, but also the frequency conversion control is more rapid and reliable.
  • the anti-noise signal modulation circuit can improve the anti-noise ability of the detection signal and increase the signal-to-noise ratio, so that the subsequent filtering process can effectively eliminate the interference of the noise signal, thereby improving the accuracy and reliability of the initial signal for subsequent filtering and processing.
  • the FM control subcircuit includes a preset periodic signal controlled gating loop.
  • the gating circuit is configured to: input the initial signal to the non-inverting input end of the signal processing circuit during a first time period of the preset periodic signal; and enable the second time period of the preset periodic signal
  • the initial signal is input to an inverting input of the signal processing circuit.
  • the preset reference signal is connected to the inverting input of the signal processing circuit during the first time period and to the non-inverting input of the signal processing circuit during the second time period.
  • the reference signal is used as a reference for the initial signal in the signal processing circuit.
  • the preset reference signal in the embodiment of the present disclosure is a reference signal set for the initial signal.
  • the gating circuit used in this embodiment is not only easy to implement, but also simple in control, and has good timeliness and stability.
  • the control of the target frequency makes the control of the target frequency easier to adjust. Therefore, in this embodiment, the gating circuit is controlled by the preset periodic signal, so that the initial signal is frequency-shifted to the frequency corresponding to the preset periodic signal, so that the initial signal can avoid the noise frequency and improve the anti-noise capability of the signal detection.
  • control period of the preset periodic signal may include only the first time period and the second time period, or may include multiple time segments or a combination of different time segments as needed. In this way, the periodic signal can be made to achieve more complex control requirements.
  • a specific frequency modulation control subcircuit structure is provided.
  • FIG. 5 it is a schematic diagram of a specific circuit structure of a noise suppression signal modulation circuit according to an embodiment of the present disclosure.
  • the frequency modulation control sub-circuit includes a first thin film transistor T1, a second thin film transistor T2, a third thin film transistor T3, and a fourth thin film transistor T4.
  • the detecting electrodes are respectively connected to the first pole of the first thin film transistor T1 and the first pole of the second thin film transistor T2.
  • a preset reference signal (eg, Vcom) is coupled to the first pole of the third thin film transistor T3 and the first pole of the fourth thin film transistor T4.
  • the second pole of the first thin film transistor T1 and the second pole of the third thin film transistor T3 are both connected to the non-inverting input terminal of the signal processing circuit (input "+”); the second and fourth thin films of the second thin film transistor T2 The second pole of transistor T4 is correspondingly coupled to the inverting input of the signal processing circuit (input "-").
  • the second pole of the first thin film transistor T1 and the second pole of the third thin film transistor T3 are both connected to the inverting input terminal of the signal processing circuit; the second pole of the second thin film transistor T2 and the fourth thin film transistor T4
  • the two poles are each connected to the non-inverting input of the signal processing circuit.
  • the initial signal is the detection signal output by the detection sensor.
  • a gate of the first thin film transistor and a gate of the fourth thin film transistor are both connected to a first control signal (eg, V CK1 ), and a gate of the second thin film transistor and a gate of the third thin film transistor are both A second control signal (eg, V CK2 ) is coupled, the first control signal and the second control signal outputting a modulated clock signal having a potential opposite.
  • the first source or drain is the second, and the second drain or source corresponding to the first pole; and the source and drain of the four thin film transistors are arranged without interfering with each other.
  • the first thin film transistor, the second thin film transistor, the third thin film transistor, and the fourth thin film transistor are sequentially arranged from top to bottom in the virtual frame.
  • the preset reference signal is a common mode voltage V COM , and the common mode voltage is a bias value given according to a circuit operation requirement, and is generally half of a supply voltage for providing a circuit operational amplifier (OPA). ) DC voltage level.
  • the first control signal corresponds to V CK1 in the figure
  • the second control signal corresponds to V CK2 in the figure.
  • An in-panel trace is disposed between the FM control sub-circuit and the signal processing circuit on the right side.
  • the display related circuit is exemplified based on FIG. 5, so that the detecting sensor and the frequency modulation sub-circuit are disposed on the panel side, on the left side of the broken line, and the signal processing circuit is disposed on the right side of the broken line.
  • the detection signal output by the detection sensor is connected to the non-inverting input terminal of the signal processing circuit, and the signal processing circuit is inverted.
  • the terminal is connected to a preset reference signal (V COM ).
  • V COM preset reference signal
  • the clock period corresponding to the FM control signal is T, so the detection signal can be frequency shifted to a frequency band of 1/T to avoid noise on the panel.
  • the on and off of the thin film transistor can control the switching of the detection sensor and the reference signal input to the signal processing circuit in a positive inversion, thereby making the detection signal
  • the frequency shift is the control frequency of the first control signal and the second control signal. Therefore, as long as the control frequency is avoided from the noise frequency, the detection signal can be modulated to avoid the noise frequency, improve the noise resistance of the sensor signal, and facilitate the later noise filtering.
  • the first control signal (V CK1 ) and the second control signal (V CK2 ) are timing signals having a potential opposite and a period T, wherein the timing signal corresponds to a signal frequency 1/T and The noise frequency is different.
  • the switching signal in the operation of "frequency-modulating the initial signal by a switching signal that is hopped by a preset period" includes the first control signal (V CK1 ) and the The second control signal (V CK2 ), that is, includes a timing signal having an opposite potential and a period of T.
  • FIG. 6 is a schematic diagram of an embodiment of a corresponding control signal and reset signal (ckrst) in FIG. 5 according to an embodiment of the present disclosure. It is only necessary to adjust the period (Period T) of the first control signal (V CK1 ) and the second control signal (V CK2 ) to jump, and the target frequency shift frequency can be quickly set. Especially when it is necessary to pass the test to avoid the noise frequency of the device, the adjustment of the modulation target frequency can be quickly and stably realized by the control of the switching signal.
  • the frequency modulation control sub-circuit uses at least two sets of thin film transistors to form a mirror structure for controlling the high and low levels in the control signal such that the initial signals are formed in different directions based on the mirror structure.
  • the current flow is input back to the signal processing circuit; wherein the frequency modulation control sub-circuit realizes modulation of the initial signal frequency by current flow in different directions.
  • CMOS when the detection sensor outputs a current detection signal, the embodiment of the present disclosure achieves modulation of the signal frequency by designing a mirror-symmetrical TFT switch so that the output detection signals have different current flows.
  • FIG. 8 is a schematic diagram showing another specific circuit structure of a noise suppression signal modulation circuit according to an embodiment of the present disclosure.
  • the frequency modulation control sub-circuit includes a fifth thin film transistor T5, a sixth thin film transistor T6, a seventh thin film transistor T7, and an eighth thin film transistor T8.
  • the first pole of the fifth thin film transistor T5 and the first pole of the sixth thin film transistor T6 are both connected to an output terminal of the detecting sensor (the detecting sensor is labeled as TFT S in FIG. 8), that is, an initial signal.
  • the second pole of the fifth thin film transistor T5 is connected to the first pole of the seventh thin film transistor T7, the gate of the seventh thin film transistor T7, and the gate of the eighth thin film transistor T8;
  • the second pole of the seventh thin film transistor T7 is The second pole of the eighth thin film transistor T8 is connected;
  • the first pole of the eighth thin film transistor T8 and the second pole of the sixth thin film transistor T6 are connected to the non-inverting input terminal of the signal processing circuit;
  • the preset reference signal is correspondingly connected to the signal processing circuit Inverting input.
  • the first pole of the eighth thin film transistor T8 and the second pole of the sixth thin film transistor T6 are connected to the inverting input terminal of the signal processing circuit; the preset reference signal is correspondingly connected to the signal processing circuit.
  • Non-inverting input The frequency modulation control signal (pulse signal shown in FIG. 8) is directly connected to the gate of the fifth thin film transistor T5, and the frequency modulation control signal is connected to the gate of the sixth thin film transistor T6 through an inverter.
  • the first source or drain, and the second drain or source corresponding to the first pole.
  • the upper end of the figure is the seventh thin film transistor T7 and the eighth thin film transistor T8 from left to right, and the lower end is the fifth thin film transistor T5 and the sixth thin film transistor T6 from left to right.
  • the left input of the figure corresponds to the input FM control signal.
  • the frequency modulation control signal is at a high level
  • the fifth thin film transistor T5 is turned on and the sixth thin film transistor T6 is turned off, so that the initial signal outputted from the detecting sensor is input to the seventh thin film transistor T7 and the eighth through the opened fifth thin film transistor T5.
  • the mirror structure formed by the thin film transistor T8 is then input to the signal detecting circuit through the first electrode of the eighth thin film transistor T8.
  • the frequency modulation control signal when the frequency modulation control signal is at a low level, the fifth thin film transistor T5 is turned off and the sixth thin film transistor T6 is turned on, so that the detection signal is input from the turned-on sixth thin film transistor T6 into the signal processing circuit.
  • the frequency of the detection signal is modulated to the frequency corresponding to the FM control signal. That is, a frequency modulation operation in which the detection signal is stable and reliable is realized.
  • the switching signal in the operation of "frequency-modulating the initial signal by a switching signal that is hopped by a preset period" includes the frequency-modulated control signal.
  • the corresponding embodiment in FIG. 8 causes the detection signal to be input to the inverting input terminal of the signal processing circuit, and the preset reference signal is input to the non-inverting input terminal, but the detection signal can also be input to the signal processing circuit according to actual needs.
  • the non-inverting input, and the preset reference signal is input to the inverting input.
  • FIG. 7 is a schematic diagram showing still another specific circuit structure of a noise suppression signal modulation circuit according to an embodiment of the present disclosure.
  • the initial signal is an output signal of the detecting sensor;
  • the preset reference signal is an output signal of a same shielding sensor (wi LS) as the detecting sensor.
  • the shielding sensor is a non-detecting state sensor for eliminating signal interference caused by non-detection signals in the detecting sensor. Taking the detection using the light sensor as an example, since the light sensor itself is likely to have interference factors such as dark current, the same light sensor and then the shading setting can eliminate the dark current and voltage drift in the photo sensor. The impact of factors.
  • the corresponding reference signal can be correspondingly set to the corresponding output signal of the detection sensor which is identical but in the non-detection state, and the interference caused by the detection sensor itself can be eliminated.
  • the signal processing circuit includes an operational amplifier, a first feedback capacitor CF1, a second feedback capacitor CF2, a first reset switch ccrst1, and a second reset switch ccrst2.
  • One end of the first feedback capacitor CF1 is connected to the non-inverting input of the operational amplifier, and the other end of the first feedback capacitor CF1 is connected to the non-inverting output of the operational amplifier.
  • One end of the second feedback capacitor CF2 is connected to an inverting input terminal of the operational amplifier, and the other end of the second feedback capacitor CF2 is connected to an inverting output end of the operational amplifier.
  • the first reset switch ccrst1 is connected in parallel with the first feedback capacitor CF1
  • the second reset switch ccrst2 is connected in parallel with the second feedback capacitor CF2.
  • a reset switch is used to reset the initial signal input to the signal processing circuit at the beginning of each cycle.
  • the first reset switch and the second reset switch are the same reset switch. In this way, the charge left in the two feedback capacitors can be released at the same time, that is, the reset of the detection signal input in each cycle is realized by the reset switch, so that the signal in the previous cycle does not signal to the next cycle. Make an impact.
  • the first reset switch and the second reset switch are reset by the control of the reset signal ccrst after each frequency change or switching of the frequency modulation control signal. That is, as long as the FM control voltage jumps during a frequency modulation control period, it is reset once to prevent the detection signal before the transition from affecting the detection signal after the transition. In this way, the accuracy and stability of the detection signal input to the signal processing circuit can be further improved.
  • an anti-noise signal modulation method is also provided.
  • the FM control sub-circuit described in any one of the above embodiments is required to be provided between the initial signal and the signal processing circuit.
  • the anti-noise signal modulation method includes:
  • the frequency of the acquired initial signal can be modulated to the frequency corresponding to the FM control signal, so that the initial signal frequency avoids the noise frequency, and the subsequent filtering can quickly and effectively filter the noise frequency.
  • the present disclosure also provides a display panel.
  • the display panel is provided with a detection sensor, a signal processing (for example, a detection circuit), and a frequency modulation control sub-circuit as described in any of the above embodiments.
  • the detection sensor is coupled to an input of a frequency modulation control subcircuit
  • the signal processing circuit is coupled to an output of the frequency modulation control subcircuit.
  • the detecting sensor is configured to acquire relevant information in the display panel by signal detection, thereby obtaining an initial signal
  • the signal processing circuit is configured to perform correlated signal processing on the initial signal output by the detecting sensor. In this way, the initial signal detected in the display panel can be made to avoid the noise frequency and ensure the accuracy of the signal.
  • the frequency modulation control subcircuit is disposed at a position close to the detection sensor. In this way, the noise signal is not subjected to frequency modulation processing, and the accuracy and reliability of the initial signal for frequency shift processing are improved.
  • a display device comprising the noise prevention signal modulation circuit/display panel of any of the above embodiments.
  • DRAM dynamic RAM

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Abstract

一种防噪信号调变电路、调变方法及显示面板、显示装置。防噪信号调变电路包括调频控制子电路(102)，调频控制子电路(102)的输入端被配置为接收初始信号（101），调频控制子电路(102)的输出端与预设的信号处理电路(103)连接；调频控制子电路(102)被配置为将初始信号（101）通过按预设周期跳变的开关信号进行频率调制并将调制结果输出至信号处理电路(103)，开关信号对应的频率和噪声频率不重叠。

Description

防噪信号调变电路、调变方法、显示面板及显示装置 技术领域
本公开实施例涉及一种防噪信号调变电路、调变方法、显示面板及显示装置。
背景技术
信号检测在许多器件中均具有重要意义，其不仅能够使得用户及时获知器件相关信息的真实状态，而且有利于基于相关状态做出进一步处理。例如：在显示器相关技术领域内，通常需要利用检测传感器随环境变化的特性，将该变化转换成电流或电压并输入到信号处理电路以进行相关信号检测。而基于检测需求的不同，使得显示器上集成的检测传感器可能设置在显示屏上的任意位置；当检测传感器与处理检测信号的信号处理电路距离较远时，可以使用走线将检测传感器检测到的信号传输到信号处理电路中。与此同时，基于设备中存在较多的噪声信号，使得检测信号通过走线传输的过程中，很有可能会因为显示或触控的电压耦合，对检测信号造成额外且严重的噪声信号。而一般在信号处理上，若噪声的频率落在检测信号的频带内，要实现较好的滤除效果是很困难的。
发明人发现现有设备中获取的相关信号难以有效消除设备中或外界环境中的噪声信号带来的干扰。
发明内容
本公开实施例提供的一种防噪信号调变电路，包括调频控制子电路。所述调频控制子电路的输入端被配置为接收初始信号，所述调频控制子电路的输出端与预设的信号处理电路连接；所述调频控制子电路被配置为将所述初始信号通过按预设周期跳变的开关信号进行频率调制，并将调制结果输出至信号处理电路；所述开关信号对应的频率噪声频率不重叠。
例如，所述调频控制子电路包括预设的周期信号控制的选通回路，所述选通回路被配置为在预设周期信号的第一时间段内，使所述初始信号输入到 所述信号处理电路的同相输入端，在预设周期信号的第二时间段内，使所述初始信号输入到所述信号处理电路的反相输入端；预设的参考信号在第一时间段内连接到信号处理电路的反相输入端，在第二时间段内连接到信号处理电路的同相输入端；所述参考信号用于在信号处理电路中作为初始信号的参考基准。
例如，所述调频控制子电路包括第一薄膜晶体管、第二薄膜晶体管、第三薄膜晶体管、第四薄膜晶体管。所述初始信号与第一薄膜晶体管的第一极和第二薄膜晶体管的第一极连接，预设的参考信号与第三薄膜晶体管的第一极和第四薄膜晶体管的第一极连接。所述薄膜晶体管与所述信号处理电路的连接至少有两种连接方式，第一种连接方式为：第一薄膜晶体管的第二极和第三薄膜晶体管的第二极均连接到信号处理电路的同相输入端，第二薄膜晶体管的第二极和第四薄膜晶体管的第二极均相应的连接到信号处理电路的反相输入端。第二种连接方式为：第一薄膜晶体管的第二极和第三薄膜晶体管的第二极均连接到信号处理电路的反相输入端，第二薄膜晶体管的第二极和第四薄膜晶体管的第二极均相应的连接到信号处理电路的同相输入端。所述第一薄膜晶体管的栅极和第四薄膜晶体管的栅极均与第一控制信号连接，所述第二薄膜晶体管的栅极和第三薄膜晶体管的栅极均与第二控制信号连接，所述第一控制信号与第二控制信号输出电位相反的调制脉冲信号，所述开关信号包括所述第一控制信号与所述第二控制信号。
例如，所述第一控制信号与第二控制信号为电位相反且周期为T的时序信号，其中，时序信号对应的信号频率1/T与噪声频率不同。
例如，所述调频控制子电路采用至少两组薄膜晶体管形成镜射结构，被配置为通过控制信号中高低电平的控制，使得初始信号基于所述镜射结构形成不同方向的电流流向后输入到信号处理电路中；其中，所述调频控制子电路通过不同方向的电流流向实现所述初始信号频率的调制。
例如，所述调频控制子电路包括第五薄膜晶体管、第六薄膜晶体管、第七薄膜晶体管、第八薄膜晶体管。第五薄膜晶体管的第一极与第六薄膜晶体管的第一极均与初始信号连接，第五薄膜晶体管的第二极与第七薄膜晶体管的第一极、第七薄膜晶体管的栅极、第八薄膜晶体管的栅极连接，第七薄膜晶体管的第二极与第八薄膜晶体管的第二极连接。第八薄膜晶体管的第一极 和第六薄膜晶体管的第二极连接到信号处理电路的同相输入端，预设的参考信号对应连接到信号处理电路的反相输入端；或者，第八薄膜晶体管的第一极和第六薄膜晶体管的第二极连接到信号处理电路的反相输入端，预设的参考信号对应连接到信号处理电路的同相输入端。调频控制信号直接连接到第五薄膜晶体管的栅极且通过反相器连接到第六薄膜晶体管的栅极，所述开关信号包括所述调频控制信号。
例如，预设的参考信号为共模电压信号，用于提供电路运放的直流电压位准。
例如，所述初始信号为检测传感器的输出信号；预设的参考信号为与检测传感器相同的屏蔽传感器的输出信号，所述屏蔽传感器为非检测状态的传感器，被配置为消除检测传感器中非检测信号带来的信号干扰。
例如，所述信号处理电路包括运算放大器、第一反馈电容、第二反馈电容、第一复位开关和第二复位开关；所述第一反馈电容的一端连接到所述运算放大器的同相输入端，所述第一反馈电容的另一端连接到所述运算放大器的同相输出端；所述第二反馈电容的一端连接到所述运算放大器的反相输入端，所述第二反馈电容的另一端连接到所述运算放大器的反相输出端；所述第一复位开关与第一反馈电容并联连接，所述第二复位开关与第二反馈电容并联连接。
例如，所述第一复位开关和所述第二复位开关为同一复位开关。
例如，所述第一复位开关和所述第二复位开关在调频控制信号每次跳变或者切换后进行一次复位。
本公开实施例还提供了一种防噪信号调变方法，应用于上述任意一项中所述的调频控制子电路，包括：
输入预设的正向调频控制信号，使得初始信号输入到信号处理电路的同相输入端，预设的参考信号输入到信号处理电路的反相输入端；
将调频控制信号的电位切换，得到反向调频控制信号，使得初始信号输入到信号处理电路的反相输入端，预设的参考信号输入到信号处理电路的同相输入端；
控制正向调频控制信号与反向调频控制信号按照预设的控制周期输入，使得初始信号的频率移频为预设的控制周期对应的频率；其中，所述预设的 控制周期对应的频率与噪声频率不同。
本公开实施例还提供了一种显示面板，包括检测传感器、检测电路以及如上述任意一项实施例所述的调频控制子电路。所述检测传感器与调频控制子电路的输入端连接，所述检测电路与调频控制子电路的输出端连接。
例如，所述调频控制子电路设置于靠近所述检测传感器的位置。
本公开实施例还提供了一种显示装置，包括如上述任意一项实施例所述的显示面板。
附图说明
为了更清楚地说明本公开实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本公开的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。
图1为本公开实施例提供的检测传感器与信号处理电路在显示器上的连接示意图；
图2为本公开实施例提供的检测信号与噪声处于相近频率时的信号干扰示意图；
图3为本公开实施例提供的一种对检测信号进行移频处理的原理示意图；
图4为本公开实施例提供的防噪信号调变电路的第一结构示意图；
图5为本公开实施例提供的防噪信号调变电路的第二结构示意图；
图6为图5中对应控制信号及复位信号的一个实施例的示意图；
图7为本公开实施例提供的防噪信号调变电路的第三结构示意图；以及
图8为本公开实施例提供的防噪信号调变电路的第四结构示意图。
具体实施方式
为使本公开的目的、技术方案和优点更加清楚明白，以下结合具体实施例，并参照附图，对本公开进一步详细说明。显然，所描述的实施例仅仅是本公开一部分实施例，而不是全部的实施例。基于本公开中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都 属于本公开保护的范围。
需要说明的是，本公开实施例中所有使用“第一”和“第二”的表述均是为了区分两个相同名称非相同的实体或者非相同的参量，可见“第一”“第二”仅为了表述的方便，不应理解为对本公开实施例的限定，后续实施例对此不再一一说明。
在当前的需要进行相关信号处理的过程中，由于获取的初始信号需要经过一定距离的传输，导致初始信号在传输过程中受到噪声频率的干扰，而当前技术难以有效消除相近频率的噪声信号的干扰。例如：在设备中同时设置有检测传感器和信号处理电路的情况下(尤其是当检测传感器需要通过较长的走线连接到信号处理电路时)，在设备自身的各种信号传递过程中可能会对走线中的检测信号造成一定的噪声干扰。特别是当设备中的噪声频率与检测信号频率将近或者相同时，噪声影响更为严重。以显示器中的信号检测为例，参照图1所示，为本公开实施例提供的检测传感器与信号处理电路在显示器上的连接示意图。图中，基于检测需求，需要在显示区(AA区)的上方和下方均设置检测传感器(例如，检测传感器为in-plane Sensor)，而信号处理电路(例如，信号处理电路为检测电路(Detection Circuit))设置在显示区的下方。因此，对于上方的检测传感器来说，需要通过较长的走线(例如，走线为平面内走线(in-panel trace))连接到信号处理电路，而显示器在操作过程中相关信号会对走线中的检测信号造成干扰。最终导致信号检测结果不准确。
本公开的实施例提出一种防噪信号调变电路、调变方法及显示面板、显示装置，能够提高初始信号的抗噪能力，增加信噪比，使得后续滤波过程能够有效消除噪声信号的干扰，提高初始信号的准确性。参照图2所示，为本公开实施例提供的检测信号与噪声处于相近频率时的信号干扰示意图。图中所述讯号即为检测信号，所示滤波器响应为滤波频段内的响应。由于滤波的频段和噪声的频率重叠，导致检测信号中的噪声信号难以消除。由图可知，当噪声信号与检测信号频率相近时，存在频率交叉部分，而现有技术对于这样的频率干扰难以进行有效的滤除。因此，本公开实施例采用移频方式对检测信号进行调制，使得检测信号在受到干扰之前就能够通过调制改变频率，避开设备中的噪声频带，进而提高信噪比。
参照图3所示，为本公开实施例提供的一种对检测信号进行移频处理的原理示意图。由图可知，通过移频使得检测信号的频率发生改变，所以当检测信号与噪声信号发生融合干扰时，检测信号与噪声信号不存在频率交叉部分。在这种情况下，即使检测信号中依旧存在干扰信号，但是基于检测信号与噪声信号的频率差距，可以通过滤波技术快速有效的将噪声滤除。
在本公开一些实施例中，参照图4所示，所述防噪信号调变电路包括调频控制子电路102。所述调频控制子电路102的输入端用于接收初始信号101，所述调频控制子电路的输出端与预设的信号处理电路103连接；所述调频控制子电路102通过按预设周期跳变的开关信号，对所述初始信号101进行频率调制后，将调制结果输出至信号处理电路103。所述开关信号对应的频率避开噪声频率。例如，初始信号101既可以是通过检测传感器获得的检测信号，也可以是其他形式获得的检测信号或非检测信号。常见的，采用检测传感器设置于设备中用于检测设备相关信息，所述检测传感器输出的初始信号需要传输到相应的信号处理电路中进行信号处理。所述信号处理电路用于对初始信号(例如，检测传感器输出的检测信号)进行处理后输出到相应的后续单元中。所述噪声为初始信号在传输过程中由于设备相关操作或者外界相关信号引起的信号干扰。本公开实施例在初始信号101与信号处理电路103之间增加一个通过开关信号控制的调频控制子电路102实现初始信号的移频操作，使得检测传感器中输出的初始信号与噪声信号处于不同的频率。因此，所述调频控制子电路一般设置于所述检测传感器一侧，即初始信号一侧，然后通过走线连接到信号处理电路中。
由上述实施例可知，所述防噪信号调变电路，通过在初始信号与信号处理电路之间设置一个能够进行信号频率调制的调频控制子电路，使得初始信号通过频率调制移频到与噪声频率不同的频率上，进而在后续的滤波过程中能够快速准确的将相关噪声信号滤除。同时，基于信号处理效率和时效性考虑，本公开实施例通过按照预设周期跳变的开关信号实现检测信号频率的调制，只需要根据设备频率响应的控制开关信号的周期，也即频率即可实现初始信号的移频处理。这样，不仅使得调频控制结构极为简便，而且对频率的变换控制更为迅速可靠。所述防噪信号调变电路能够提高检测信号的抗噪能力，增加信噪比，使得后续滤波过程能够有效消除噪声信号的干扰，从而提 高初始信号进行后续滤波和处理的准确性和可靠性。
在本公开一些实施例中，所述调频控制子电路包括预设的周期信号控制的选通回路。所述选通回路用于：在预设周期信号的第一时间段内，使所述初始信号输入到所述信号处理电路的同相输入端；在预设周期信号的第二时间段内，使所述初始信号输入到所述信号处理电路的反相输入端。预设的参考信号在第一时间段内连接到信号处理电路的反相输入端，在第二时间段内连接到信号处理电路的同相输入端。所述参考信号用于在信号处理电路中作为初始信号的参考基准。例如，在进行初始信号处理的过程中，通常需要设置一个参考信号，使得检测信号与参考信号形成一定的电位差再输入到相应的信号处理电路中。而本公开实施例中所述预设的参考信号即为对初始信号设置的一个参考信号。本实施例所采用的选通回路不仅容易实现，控制简单，而且具有较好的时效性和稳定性。此外，通过选通回路的控制使得目标频率的控制也更容易调整。因此，本实施例通过预设的周期信号控制选通回路，使得初始信号移频到预设的周期信号对应的频率上，使初始信号能够避开噪声频率，提高信号检测的抗噪能力。
例如，所述预设的周期信号的一个控制周期内既可以只包括第一时间段和第二时间段，也可以根据需要包括多个时间段或者不同时间段的组合变型。这样，可以使得周期信号实现更为复杂的控制需求。
在本公开一些实施例中，提供了一种具体的调频控制子电路结构。参照图5所示，为本公开实施例提供的防噪信号调变电路的具体电路结构示意图。所述调频控制子电路包括第一薄膜晶体管T1、第二薄膜晶体管T2、第三薄膜晶体管T3、第四薄膜晶体管T4。检测传感器分别与第一薄膜晶体管T1的第一极和第二薄膜晶体管T2的第一极连接。预设的参考信号(例如，Vcom)与第三薄膜晶体管T3的第一极和第四薄膜晶体管T4的第一极连接。第一薄膜晶体管T1的第二极和第三薄膜晶体管T3的第二极均连接到信号处理电路的同相输入端(输入端“+”)；第二薄膜晶体管T2的第二极和第四薄膜晶体管T4的第二极均相应的连接到信号处理电路的反相输入端(输入端“-”)。或者，第一薄膜晶体管T1的第二极和第三薄膜晶体管T3的第二极均连接到信号处理电路的反相输入端；第二薄膜晶体管T2的第二极和第四薄膜晶体管T4的第二极均相应的连接到信号处理电路的同相输入端。在本实施例中， 初始信号即为检测传感器输出的检测信号。
所述第一薄膜晶体管的栅极和第四薄膜晶体管的栅极均与第一控制信号(例如，V CK1)连接，所述第二薄膜晶体管的栅极和第三薄膜晶体管的栅极均与第二控制信号(例如，V CK2)连接，所述第一控制信号与第二控制信号输出电位相反的调制时脉信号。
例如，第一极为源极或漏极，而第二极为与第一极对应的漏极或源极；并且四个薄膜晶体管的源漏极的设置方式互不干涉。为了进一步明确具体的连接关系，图中虚框内由上到下设置的依次为第一薄膜晶体管、第二薄膜晶体管、第三薄膜晶体管、第四薄膜晶体管。所述预设的参考信号为共模电压V COM，所述共模电压为依据电路操作需要给定的一个偏值，一般为电源电压(supply voltage)的一半，用于提供电路运放(OPA)的直流电压位准。第一控制信号对应图中V CK1，第二控制信号对应图中V CK2。调频控制子电路与右侧的信号处理电路之间设置有传输线(in-panel trace)。此外，基于附图5采用显示器相关电路为例说明，因此使得检测传感器和调频控制子电路设置于面板侧(panel side)，位于虚线左侧，而信号处理电路设置于虚线右侧。
当第一控制信号(V CK1)为高电平，第二控制信号(V CK2)为低电平时，检测传感器输出的检测信号接到信号处理电路的同相输入端，而信号处理电路反相输入端与预设的参考信号(V COM)连接。而当第一控制信号(V CK1)为低电平，第二控制信号(V CK2)为高电平时，则检测信号接到信号处理电路的反相输入端，预设的参考信号(V COM)接到信号处理电路的同相输入端。调频控制信号对应的时钟周期为T，因此可以将检测信号移频到频率为1/T的频带，以避开面板上的噪声。这样，通过控制第一控制信号与第二控制信号的输出电压信号，使得薄膜晶体管的导通和关断可以控制检测传感器与参考信号输入到信号处理电路正反相的切换，从而使得检测信号的频率移频为第一控制信号与第二控制信号的控制频率。所以只要使得控制频率避开噪声频率，就能够使得检测信号经过调制后可以避开噪声频率，提高传感器讯号的抗噪能力，有利于后期的噪声滤除。
在本公开一些实施例中，所述第一控制信号(V CK1)与第二控制信号(V CK2)为电位相反且周期为T的时序信号，其中，时序信号对应的信号频率1/T与噪声频率不同。例如，在本实施例中，在操作“将所述初始信号通 过按预设周期跳变的开关信号进行频率调制”中的所述开关信号包括所述第一控制信号(V CK1)和所述第二控制信号(V CK2)，即包括电位相反且周期为T的时序信号。
参照图6所示，为本公开实施例提供的图5中对应的控制信号及复位信号(ckrst)的一个实施例的示意图。只需要相应的调节第一控制信号(V CK1)与第二控制信号(V CK2)跳变的周期(Period T)，就能够快速实现目标移频频率的设置。尤其是当需要通过测试来避开设备噪声频率时，通过开关信号的控制，能够快速稳定实现调制目标频率的调整。
在本公开一些实施例中，所述调频控制子电路采用至少两组薄膜晶体管形成镜射结构，用于通过控制信号中高低电平的控制，使得初始信号基于所述镜射结构形成不同方向的电流流向后输入到信号处理电路中；其中，所述调频控制子电路通过不同方向的电流流向实现所述初始信号频率的调制。在CMOS中，当所述检测传感器输出的为电流检测信号时，本公开实施例通过设计一种镜像对称的TFT开关使得输出的检测信号具有不同的电流流向，进而实现信号频率的调制。
在本公开一些实施例中，提供了一种具体的调频控制子电路。参照图8所示，为本公开实施例提供的防噪信号调变电路的另一具体电路结构示意图。所述调频控制子电路包括第五薄膜晶体管T5、第六薄膜晶体管T6、第七薄膜晶体管T7、第八薄膜晶体管T8。第五薄膜晶体管T5的第一极与第六薄膜晶体管T6的第一极均连接到检测传感器(检测传感器在图8中标注为TFT S)的输出端，即初始信号。第五薄膜晶体管T5的第二极与第七薄膜晶体管T7的第一极、第七薄膜晶体管T7的栅极、第八薄膜晶体管T8的栅极连接；第七薄膜晶体管T7的第二极与第八薄膜晶体管T8的第二极连接；第八薄膜晶体管T8的第一极和第六薄膜晶体管T6的第二极连接到信号处理电路的同相输入端；预设的参考信号对应连接到信号处理电路的反相输入端。或者，如图8所示，第八薄膜晶体管T8的第一极和第六薄膜晶体管T6的第二极连接到信号处理电路的反相输入端；预设的参考信号对应连接到信号处理电路的同相输入端。调频控制信号(图8中示出的脉冲信号)直接连接到第五薄膜晶体管T5的栅极，且调频控制信号通过反相器连接到第六薄膜晶体管T6的栅极。例如，第一极为源极或漏极，第二极为与第一极对应的漏极或源极。 图中上端从左到右分别为第七薄膜晶体管T7和第八薄膜晶体管T8，下端从左到右分别为第五薄膜晶体管T5和第六薄膜晶体管T6。图中左侧输入端对应输入调频控制信号。当调频控制信号为高电平时，第五薄膜晶体管T5打开而第六薄膜晶体管T6关闭，这样，检测传感器中输出的初始信号通过打开的第五薄膜晶体管T5输入到第七薄膜晶体管T7和第八薄膜晶体管T8形成的镜像结构中，然后通过第八薄膜晶体管T8的第一极输入到信号检测电路中。相反地，当调频控制信号为低电平时，第五薄膜晶体管T5关闭而第六薄膜晶体管T6开启，使得检测信号从打开的第六薄膜晶体管T6输入到信号处理电路中。这样，通过对检测传感器输出的检测信号形成相反电流流向的控制，使得检测信号的频率调制为调频控制信号对应的频率。也即，实现了检测信号稳定可靠的频率调制操作。例如，在本实施例中，在操作“将所述初始信号通过按预设周期跳变的开关信号进行频率调制”中的所述开关信号包括所述调频控制信号。
例如，图8中对应的实施例使得检测信号输入到信号处理电路的反相输入端，而预设的参考信号输入到同相输入端，但根据实际需要，也可以使得检测信号输入到信号处理电路的同相输入端，而预设的参考信号输入到反相输入端。
参照图7所示，为本公开实施例提供的防噪信号调变电路的又一具体电路结构示意图。所述初始信号为检测传感器的输出信号；预设的参考信号为与检测传感器相同的屏蔽传感器(wi LS)的输出信号。所述屏蔽传感器为非检测状态的传感器，用于消除检测传感器中非检测信号带来的信号干扰。以使用光传感器进行检测为例，由于光传感器本身很可能具有暗电流等干扰因素，所以利用完全一样的光传感器，然后采用遮光设置，就可以消除光传感器中自带的暗电流以及电压漂移等因素的影响。当然，基于不同检测传感器的检测原理，可以相应的设置预设的参考信号为完全相同但处于非检测状态的检测传感器相应的输出信号，可以消除检测传感器自身带来的干扰。
在本公开一些实施例中，参照图5所示，所述信号处理电路包括运算放大器、第一反馈电容CF1、第二反馈电容CF2、第一复位开关ckrst1和第二复位开关ckrst2。所述第一反馈电容CF1的一端连接到所述运算放大器的同相输入端，所述第一反馈电容CF1的另一端连接到所述运算放大器的同相输 出端。所述第二反馈电容CF2的一端连接到所述运算放大器的反相输入端，所述第二反馈电容CF2的另一端连接到所述运算放大器的反相输出端。所述第一复位开关ckrst1与第一反馈电容CF1并联连接，所述第二复位开关ckrst2与第二反馈电容CF2并联连接。例如，复位开关用于对输入到信号处理电路中的初始信号在每个周期的起始时刻进行复位。例如，所述第一复位开关和所述第二复位开关为同一复位开关。这样，能够在同一时刻将两个反馈电容中遗留的电荷释放掉，也即通过复位开关实现每个周期中输入的检测信号的复位，使得前一个周期中的信号不会对后一个周期的信号造成影响。
例如，参照图6所示，所述第一复位开关和所述第二复位开关通过复位信号ckrst的控制，在调频控制信号每次跳变或者切换后进行一次复位。也即在一个调频控制周期内只要调频控制电压发生跳变，则复位一次，防止跳变之前的检测信号对跳变之后的检测信号产生影响。这样，能够进一步提高输入到信号处理电路中的检测信号的准确性和稳定性。
在本公开一些实施例中，还提供了一种防噪信号调变方法。首先需要在初始信号与信号处理电路之间设置上述任意一项实施例中所述调频控制子电路。所述防噪信号调变方法包括：
输入预设的正向调频控制信号，使得初始信号输入到信号处理电路的同相输入端，预设的参考信号连接到信号处理电路的反相输入端；
将调频控制信号的电位切换，得到反向调频控制信号，使得初始信号输入到信号处理电路的反相输入端，预设的参考信号连接到信号处理电路的同相输入端；
控制正向调频控制信号与反向调频控制信号按照预设的控制周期输入，使得初始信号的频率移频为预设的控制周期对应的频率；其中，所述预设的控制周期对应的频率与噪声频率不同。
这样，通过对调频控制信号的控制，能够使得获取的初始信号的频率调制为调频控制信号对应的频率，进而使得初始信号频率避开噪声频率，进而后续通过滤波能够将噪声频率快速有效滤除。
在一些实施例中，本公开还提供了一种显示面板。所述显示面板中设置有检测传感器、信号处理(例如，检测电路)以及如上述任意一项实施例所述的调频控制子电路。所述检测传感器与调频控制子电路的输入端连接，所 述信号处理电路与调频控制子电路的输出端连接。例如，所述检测传感器用于通过信号检测获取显示面板中相关的信息，进而得到初始信号；所述信号处理电路用于对检测传感器输出的初始信号进行相关信号处理。这样，能够使得显示面板中的检测得到的初始信号能够避开噪声频率，保证信号的准确性。
例如，所述调频控制子电路设置于靠近所述检测传感器的位置。这样，使得不会将噪声信号也进行调频处理，提高初始信号进行移频处理的准确性和可靠性。
在本公开一些实施例中，还提供了一种显示装置，所述显示装置包括上述任意一项实施例所述的防噪信号调变电路/显示面板。
所属领域的普通技术人员应当理解：以上任何实施例的讨论仅为示例性的，并非旨在暗示本公开的范围(包括权利要求)被限于这些例子；在本公开的思路下，以上实施例或者不同实施例中的技术特征之间也可以进行组合，步骤可以以任意顺序实现，并存在如上所述的本公开的不同方面的许多其它变化，为了简明它们没有在细节中提供。
另外，为简化说明和讨论，并且为了不会使本公开难以理解，在所提供的附图中可以示出或可以不示出与集成电路(IC)芯片和其它部件的公知的电源/接地连接。此外，可以以框图的形式示出装置，以便避免使本公开难以理解，并且这也考虑了以下事实，即关于这些框图装置的实施方式的细节是高度取决于将要实施本公开的平台的(即，这些细节应当完全处于本领域技术人员的理解范围内)。在阐述了具体细节(例如，电路)以描述本公开的示例性实施例的情况下，对本领域技术人员来说显而易见的是，可以在没有这些具体细节的情况下或者这些具体细节有变化的情况下实施本公开。因此，这些描述应被认为是说明性的而不是限制性的。
尽管已经结合了本公开的具体实施例对本公开进行了描述，但是根据前面的描述，这些实施例的很多替换、修改和变型对本领域普通技术人员来说将是显而易见的。例如，其它存储器架构(例如，动态RAM(DRAM))可以使用所讨论的实施例。
本公开的实施例旨在涵盖落入所附权利要求的宽泛范围之内的所有这样的替换、修改和变型。因此，凡在本公开的精神和原则之内，所做的任何省 略、修改、等同替换、改进等，均应包含在本公开的保护范围之内。
本公开要求于2017年7月10日递交的中国专利申请第201710556766.1号的优先权，在此全文引用上述中国专利申请公开的内容以作为本公开的一部分。

Claims (15)

  1. 一种防噪信号调变电路，包括：
    调频控制子电路，其中，
    所述调频控制子电路的输入端被配置为接收初始信号，所述调频控制子电路的输出端与预设的信号处理电路连接；
    所述调频控制子电路被配置为将所述初始信号通过按预设周期跳变的开关信号进行频率调制，并将调制结果输出至所述信号处理电路；以及
    所述开关信号对应的频率和噪声频率不重叠。
  2. 根据权利要求1所述的防噪信号调变电路，其中，所述调频控制子电路包括通过预设周期信号控制的选通回路；
    所述选通回路被配置为：在预设周期信号的第一时间段内，使所述初始信号输入到所述信号处理电路的同相输入端；在预设周期信号的第二时间段内，使所述初始信号输入到所述信号处理电路的反相输入端；
    预设的参考信号在所述第一时间段内连接到所述信号处理电路的反相输入端，在所述第二时间段内连接到所述信号处理电路的同相输入端；以及
    所述参考信号用于在所述信号处理电路中作为所述初始信号的参考基准。
  3. 根据权利要求2所述的防噪信号调变电路，其中，所述调频控制子电路包括第一薄膜晶体管、第二薄膜晶体管、第三薄膜晶体管、第四薄膜晶体管；
    所述初始信号与所述第一薄膜晶体管的第一极和所述第二薄膜晶体管的第一极连接，所述参考信号与所述第三薄膜晶体管的第一极和所述第四薄膜晶体管的第一极连接；
    所述薄膜晶体管与所述信号处理电路的连接至少有两种连接方式，第一种连接方式为：所述第一薄膜晶体管的第二极和所述第三薄膜晶体管的第二极均连接到所述信号处理电路的同相输入端；所述第二薄膜晶体管的第二极和所述第四薄膜晶体管的第二极均相应的连接到所述信号处理电路的反相输入端；
    第二种连接方式为：所述第一薄膜晶体管的第二极和所述第三薄膜晶体 管的第二极均连接到所述信号处理电路的反相输入端；所述第二薄膜晶体管的第二极和所述第四薄膜晶体管的第二极均相应的连接到所述信号处理电路的同相输入端；
    所述第一薄膜晶体管的栅极和所述第四薄膜晶体管的栅极均与第一控制信号连接，所述第二薄膜晶体管的栅极和所述第三薄膜晶体管的栅极均与第二控制信号连接，所述第一控制信号与所述第二控制信号为电位相反的调制脉冲信号，所述开关信号包括所述第一控制信号与所述第二控制信号。
  4. 根据权利要求3所述的防噪信号调变电路，其中，所述第一控制信号与第二控制信号为电位相反且周期为T的时序信号，其中，时序信号对应的信号频率1/T与噪声频率不同。
  5. 根据权利要求1所述的防噪信号调变电路，其中，所述调频控制子电路采用至少两组薄膜晶体管形成镜射结构，被配置为通过控制信号中高低电平的控制，使得初始信号基于所述镜射结构形成不同方向的电流流向后输入到信号处理电路中；所述调频控制子电路通过不同方向的电流流向实现所述初始信号频率的调制。
  6. 根据权利要求5所述的防噪信号调变电路，其中，所述调频控制子电路包括第五薄膜晶体管、第六薄膜晶体管、第七薄膜晶体管、第八薄膜晶体管；
    所述第五薄膜晶体管的第一极与所述第六薄膜晶体管的第一极均与所述初始信号连接；所述第五薄膜晶体管的第二极与所述第七薄膜晶体管的第一极、所述第七薄膜晶体管的栅极、所述第八薄膜晶体管的栅极连接；所述第七薄膜晶体管的第二极与所述第八薄膜晶体管的第二极连接；
    所述第八薄膜晶体管的第一极和所述第六薄膜晶体管的第二极连接到所述信号处理电路的同相输入端，预设的参考信号对应连接到所述信号处理电路的反相输入端；或者，所述第八薄膜晶体管的第一极和所述第六薄膜晶体管的第二极连接到所述信号处理电路的反相输入端，所述预设的参考信号对应连接到所述信号处理电路的同相输入端；以及
    调频控制信号直接连接到所述第五薄膜晶体管的栅极且通过反相器连接到所述第六薄膜晶体管的栅极，所述开关信号包括所述调频控制信号。
  7. 根据权利要求1-6所述的防噪信号调变电路，其中，预设的参考信号 为共模电压信号，用于提供电路运放的直流电压位准。
  8. 根据权利要求1-6所述的防噪信号调变电路，其中，所述初始信号为检测传感器的输出信号；预设的参考信号为与所述检测传感器相同的屏蔽传感器的输出信号，所述屏蔽传感器为非检测状态的传感器，被配置为消除所述检测传感器中非检测信号带来的信号干扰。
  9. 根据权利要求1-6所述的防噪信号调变电路，其中，所述信号处理电路包括运算放大器、第一反馈电容、第二反馈电容、第一复位开关和第二复位开关；
    所述第一反馈电容的一端连接到所述运算放大器的同相输入端，所述第一反馈电容的另一端连接到所述运算放大器的同相输出端；
    所述第二反馈电容的一端连接到所述运算放大器的反相输入端，所述第二反馈电容的另一端连接到所述运算放大器的反相输出端；以及
    所述第一复位开关与第一反馈电容并联连接，所述第二复位开关与第二反馈电容并联连接。
  10. 根据权利要求9所述的防噪信号调变电路，其中，所述第一复位开关和所述第二复位开关为同一复位开关。
  11. 根据权利要求9所述的防噪信号调变电路，其中，所述第一复位开关和所述第二复位开关在调频控制信号每次跳变或者切换后进行一次复位。
  12. 一种防噪信号调变方法，应用于如权利要求1-11任意一项中所述的防噪信号调变电路，包括：
    输入预设的正向调频控制信号，使得初始信号输入到信号处理电路的同相输入端，预设的参考信号输入到所述信号处理电路的反相输入端；
    将调频控制信号的电位切换，得到反向调频控制信号，使得所述初始信号输入到所述信号处理电路的反相输入端，所述预设的参考信号输入到所述信号处理电路的同相输入端；以及
    控制所述正向调频控制信号与所述反向调频控制信号按照预设的控制周期输入，使得所述初始信号的频率移频为预设的控制周期对应的频率，其中，所述预设的控制周期对应的频率与噪声频率不同。
  13. 一种显示面板，包括：
    检测传感器、检测电路以及如权利要求1-11任意一项所述的防噪信号调 变电路，其中，所述检测传感器与所述调频控制子电路的输入端连接，所述检测电路与所述调频控制子电路的输出端连接。
  14. 根据权利要求13所述的显示面板，其中，所述调频控制子电路设置于靠近所述检测传感器的位置。
  15. 一种显示装置，包括如权利要求13-14任意一项所述的显示面板。
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