WO2018225809A1 - セラミックス回路基板 - Google Patents
セラミックス回路基板 Download PDFInfo
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- WO2018225809A1 WO2018225809A1 PCT/JP2018/021810 JP2018021810W WO2018225809A1 WO 2018225809 A1 WO2018225809 A1 WO 2018225809A1 JP 2018021810 W JP2018021810 W JP 2018021810W WO 2018225809 A1 WO2018225809 A1 WO 2018225809A1
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- silver
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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Abstract
Description
即ち、本発明は、窒化アルミニウムまたは窒化珪素を用いてなるセラミックス基板の両主面に、銅板がろう材を介して接合され、少なくとも一方の主面の銅板上に銀めっきが施されたセラミックス回路基板であって、銅板側面は銀めっきが施されておらず、銀めっきの厚みが0.1μmから1.5μmであり、銀めっき後の回路基板の表面粗さの算術平均粗さRaが0.1μmから1.5μmであることを特徴とするセラミックス回路基板である。
本発明は、窒化アルミニウムまたは窒化珪素を用いてなるセラミックス基板の両主面に、銅板がろう材を介して接合され、少なくとも一方の主面の銅板上に銀めっきが施されたセラミックス回路基板であって、銅板側面は銀めっきが施されておらず、銀めっきの厚みが0.1μmから1.5μmであり、銀めっき後の回路基板の表面粗さの算術平均粗さRaが0.1μmから1.5μmであることを特徴とするセラミックス回路基板である。
本発明のセラミックス回路基板に使用されるセラミックス基板としては、特に限定されるものではなく、窒化ケイ素、窒化アルミニウムなどの窒化物系セラミックス、酸化アルミニウム、酸化ジルコニウムなどの酸化物系セラミックス、炭化ケイ素等の炭化物系セラミックス、ほう化ランタン等のほう化物系セラミックス等で使用できる。但し、金属板を活性金属法でセラミックス基板に接合するため、窒化アルミニウム、窒化ケイ素等の非酸化物系セラミックスが好適であり、更に、優れた機械強度、破壊靱性の観点より、窒化ケイ素基板が好ましい。
また、本発明の一実施形態のセラミックス回路基板の、パターン間距離0.5mmから成るくし型電極付き基板を使用し、恒温恒湿槽にて85℃、93%RHの雰囲気下でDC1kVを500Hr印加した後のパターン間の絶縁抵抗値は、1×106Ω以下が好ましい。
さらに、本発明の一実施形態のセラミックス回路基板の、2枚の回路基板の間にEMC樹脂を挟みこみ硬化させた後の引張り試験器でせん断応力を測定した値は、20kg/cm2以上であることが好ましい。
本発明のセラミックス回路基板の製造方法は、無電解の銀めっきを行うことを含む、製造方法である。
銀めっきは薄膜成形が可能であるが、さらに表面内の膜厚ばらつきを低減できる無電解めっきであることが好ましい。
[実施例]
厚み0.32mm、外形サイズ50mm×50mmの窒化珪素基板の両主面に銀と銅を主成分とする接合材を塗布後、無酸素銅C1020の板で挟み積層した。この積層体を加圧しながら、真空中で加熱し、銅-セラミックス接合体を製造した。
実施例の無電解銀めっきの処理時間を短くすることにより、薄膜銀めっきを作製し、処理時間を長くすることにより厚膜銀めっきの回路基板を作製した。
銀めっき厚みは、5000倍から10000倍の倍率での断面SEM観察により長さ50μmの範囲で厚みを複数枚測定し、その平均値とした。
表面粗さの算術平均粗さは、装置SJ-301(株式会社ミツトヨ製)を使用し、基準長さ0.8mmで銀めっき表面について複数箇所測定し、その平均値とした。
銀めっき密着性は鋭利な刃物でめっき面に2mmの正方形ができるように素地まで達する切込みを入れて、粘着力のあるテープを貼り付け、これを急速に、且つ、強く引き剥がすことによって剥離の有無を調べた。
マイグレーション評価はパターン間距離0.5mmから成るくし型電極付き基板を使用し、恒温恒湿槽にて85℃、93%RHの雰囲気下でDC1kVを500Hr印加した。その後、パターン間の絶縁抵抗値を測定し、以下の2つにランク分けした。
○:≧1×106Ω、×:<1×106Ω
EMC樹脂との密着性評価は、2枚の回路基板の間にEMC樹脂を挟みこみ硬化させた後、引張り試験器でせん断応力を測定し、以下の2つにランク分けした。
○:≧20kg/cm2、×:<20kg/cm2
2 銅板
3 銀めっき
Claims (3)
- 窒化アルミニウムまたは窒化珪素を用いてなるセラミックス基板の両主面に、銅板がろう材を介して接合され、少なくとも一方の主面の銅板上に銀めっきが施されたセラミックス回路基板であって、銅板側面は銀めっきが施されておらず、銀めっきの厚みが0.1μmから1.5μmであり、銀めっき後の回路基板の表面粗さの算術平均粗さRaが0.1μmから1.5μmであることを特徴とするセラミックス回路基板。
- 無電解の銀めっきを行うことを含む、請求項1に記載のセラミックス回路基板の製造方法。
- 請求項1に記載のセラミックス回路基板の銀めっき上に銀ナノ粒子を用いて半導体素子が接合されたパワーモジュール。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201880037182.6A CN110731129B (zh) | 2017-06-09 | 2018-06-07 | 陶瓷电路基板 |
US16/619,414 US11430727B2 (en) | 2017-06-09 | 2018-06-07 | Ceramic circuit substrate |
KR1020237015540A KR20230066662A (ko) | 2017-06-09 | 2018-06-07 | 세라믹스 회로 기판 |
KR1020197035815A KR20200015519A (ko) | 2017-06-09 | 2018-06-07 | 세라믹스 회로 기판 |
JP2019523959A JP7420555B2 (ja) | 2017-06-09 | 2018-06-07 | セラミックス回路基板 |
EP18814130.3A EP3637964A4 (en) | 2017-06-09 | 2018-06-07 | CERAMIC CIRCUIT SUBSTRATE |
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JP2017113946 | 2017-06-09 | ||
JP2017-113946 | 2017-06-09 |
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WO2018225809A1 true WO2018225809A1 (ja) | 2018-12-13 |
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PCT/JP2018/021810 WO2018225809A1 (ja) | 2017-06-09 | 2018-06-07 | セラミックス回路基板 |
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US (1) | US11430727B2 (ja) |
EP (1) | EP3637964A4 (ja) |
JP (1) | JP7420555B2 (ja) |
KR (2) | KR20230066662A (ja) |
CN (1) | CN110731129B (ja) |
WO (1) | WO2018225809A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020218193A1 (ja) * | 2019-04-26 | 2020-10-29 | デンカ株式会社 | セラミックス回路基板および電子部品モジュール |
WO2022138750A1 (ja) | 2020-12-24 | 2022-06-30 | 株式会社 東芝 | 絶縁性回路基板およびそれを用いた半導体装置 |
WO2024005150A1 (ja) * | 2022-06-29 | 2024-01-04 | 株式会社 東芝 | セラミックス銅回路基板およびそれを用いた半導体装置 |
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Also Published As
Publication number | Publication date |
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CN110731129A (zh) | 2020-01-24 |
EP3637964A4 (en) | 2020-06-24 |
KR20230066662A (ko) | 2023-05-16 |
KR20200015519A (ko) | 2020-02-12 |
CN110731129B (zh) | 2024-01-09 |
US11430727B2 (en) | 2022-08-30 |
JPWO2018225809A1 (ja) | 2020-04-09 |
JP7420555B2 (ja) | 2024-01-23 |
EP3637964A1 (en) | 2020-04-15 |
US20200185320A1 (en) | 2020-06-11 |
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