JP7420555B2 - セラミックス回路基板 - Google Patents
セラミックス回路基板 Download PDFInfo
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- JP7420555B2 JP7420555B2 JP2019523959A JP2019523959A JP7420555B2 JP 7420555 B2 JP7420555 B2 JP 7420555B2 JP 2019523959 A JP2019523959 A JP 2019523959A JP 2019523959 A JP2019523959 A JP 2019523959A JP 7420555 B2 JP7420555 B2 JP 7420555B2
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- circuit board
- silver
- silver plating
- ceramic
- ceramic circuit
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- 239000000919 ceramic Substances 0.000 title claims description 41
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 54
- 229910052709 silver Inorganic materials 0.000 claims description 54
- 239000004332 silver Substances 0.000 claims description 54
- 238000007747 plating Methods 0.000 claims description 43
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 34
- 239000010949 copper Substances 0.000 claims description 32
- 229910052802 copper Inorganic materials 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 7
- 230000003746 surface roughness Effects 0.000 claims description 6
- 238000005219 brazing Methods 0.000 claims description 5
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000011347 resin Substances 0.000 description 13
- 229920005989 resin Polymers 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 239000004020 conductor Substances 0.000 description 7
- 238000013508 migration Methods 0.000 description 7
- 230000005012 migration Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 229910052575 non-oxide ceramic Inorganic materials 0.000 description 1
- 239000011225 non-oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/244—Finish plating of conductors, especially of copper conductors, e.g. for pads or lands
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
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- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
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- H05K2203/03—Metal processing
- H05K2203/0307—Providing micro- or nanometer scale roughness on a metal surface, e.g. by plating of nodules or dendrites
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- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
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- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
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Description
即ち、本発明は、窒化アルミニウムまたは窒化珪素を用いてなるセラミックス基板の両主面に、銅板がろう材を介して接合され、少なくとも一方の主面の銅板上に銀めっきが施されたセラミックス回路基板であって、銅板側面は銀めっきが施されておらず、銀めっきの厚みが0.1μmから1.5μmであり、銀めっき後の回路基板の表面粗さの算術平均粗さRaが0.1μmから1.5μmであることを特徴とするセラミックス回路基板である。
本発明は、窒化アルミニウムまたは窒化珪素を用いてなるセラミックス基板の両主面に、銅板がろう材を介して接合され、少なくとも一方の主面の銅板上に銀めっきが施されたセラミックス回路基板であって、銅板側面は銀めっきが施されておらず、銀めっきの厚みが0.1μmから1.5μmであり、銀めっき後の回路基板の表面粗さの算術平均粗さRaが0.1μmから1.5μmであることを特徴とするセラミックス回路基板である。
本発明のセラミックス回路基板に使用されるセラミックス基板としては、特に限定されるものではなく、窒化ケイ素、窒化アルミニウムなどの窒化物系セラミックス、酸化アルミニウム、酸化ジルコニウムなどの酸化物系セラミックス、炭化ケイ素等の炭化物系セラミックス、ほう化ランタン等のほう化物系セラミックス等で使用できる。但し、金属板を活性金属法でセラミックス基板に接合するため、窒化アルミニウム、窒化ケイ素等の非酸化物系セラミックスが好適であり、更に、優れた機械強度、破壊靱性の観点より、窒化ケイ素基板が好ましい。
また、本発明の一実施形態のセラミックス回路基板の、パターン間距離0.5mmから成るくし型電極付き基板を使用し、恒温恒湿槽にて85℃、93%RHの雰囲気下でDC1kVを500Hr印加した後のパターン間の絶縁抵抗値は、1×106Ω以下が好ましい。
さらに、本発明の一実施形態のセラミックス回路基板の、2枚の回路基板の間にEMC樹脂を挟みこみ硬化させた後の引張り試験器でせん断応力を測定した値は、20kg/cm2以上であることが好ましい。
本発明のセラミックス回路基板の製造方法は、無電解の銀めっきを行うことを含む、製造方法である。
銀めっきは薄膜成形が可能であるが、さらに表面内の膜厚ばらつきを低減できる無電解めっきであることが好ましい。
[実施例]
厚み0.32mm、外形サイズ50mm×50mmの窒化珪素基板の両主面に銀と銅を主成分とする接合材を塗布後、無酸素銅C1020の板で挟み積層した。この積層体を加圧しながら、真空中で加熱し、銅-セラミックス接合体を製造した。
実施例の無電解銀めっきの処理時間を短くすることにより、薄膜銀めっきを作製し、処理時間を長くすることにより厚膜銀めっきの回路基板を作製した。
銀めっき厚みは、5000倍から10000倍の倍率での断面SEM観察により長さ50μmの範囲で厚みを複数枚測定し、その平均値とした。
表面粗さの算術平均粗さは、装置SJ-301(株式会社ミツトヨ製)を使用し、基準長さ0.8mmで銀めっき表面について複数箇所測定し、その平均値とした。
銀めっき密着性は鋭利な刃物でめっき面に2mmの正方形ができるように素地まで達する切込みを入れて、粘着力のあるテープを貼り付け、これを急速に、且つ、強く引き剥がすことによって剥離の有無を調べた。
マイグレーション評価はパターン間距離0.5mmから成るくし型電極付き基板を使用し、恒温恒湿槽にて85℃、93%RHの雰囲気下でDC1kVを500Hr印加した。その後、パターン間の絶縁抵抗値を測定し、以下の2つにランク分けした。
○:≧1×106Ω、×:<1×106Ω
EMC樹脂との密着性評価は、2枚の回路基板の間にEMC樹脂を挟みこみ硬化させた後、引張り試験器でせん断応力を測定し、以下の2つにランク分けした。
○:≧20kg/cm2、×:<20kg/cm2
2 銅板
3 銀めっき
Claims (3)
- 窒化アルミニウムまたは窒化珪素を用いてなるセラミックス基板の両主面に、銅板がろう材を介して接合され、少なくとも一方の主面の銅板上に銀めっきが施されたセラミックス回路基板であって、銅板側面は銀めっきが施されておらず、銀めっきの厚みが0.1μmから1.5μmであり、銀めっき後の回路基板の表面粗さの算術平均粗さRaが0.1μmから1.5μmであり、銅板の厚みが0.8mm以上であることを特徴とするセラミックス回路基板。
- 無電解の銀めっきを行うことを含む、請求項1に記載のセラミックス回路基板の製造方法。
- 請求項1に記載のセラミックス回路基板の銀めっき上に銀ナノ粒子を用いて半導体素子が接合されたパワーモジュール。
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EP4270468A1 (en) | 2020-12-24 | 2023-11-01 | Kabushiki Kaisha Toshiba | Insulation circuit board and semiconductor device using same |
WO2024005150A1 (ja) * | 2022-06-29 | 2024-01-04 | 株式会社 東芝 | セラミックス銅回路基板およびそれを用いた半導体装置 |
CN115551213A (zh) * | 2022-11-28 | 2022-12-30 | 江苏富乐华半导体科技股份有限公司 | 一种覆铜陶瓷基板图形侧壁无镀银层的方法 |
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KR20230066662A (ko) | 2023-05-16 |
CN110731129B (zh) | 2024-01-09 |
EP3637964A4 (en) | 2020-06-24 |
KR20200015519A (ko) | 2020-02-12 |
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EP3637964A1 (en) | 2020-04-15 |
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