TWI665766B - 陶瓷電路基板 - Google Patents

陶瓷電路基板 Download PDF

Info

Publication number
TWI665766B
TWI665766B TW104105845A TW104105845A TWI665766B TW I665766 B TWI665766 B TW I665766B TW 104105845 A TW104105845 A TW 104105845A TW 104105845 A TW104105845 A TW 104105845A TW I665766 B TWI665766 B TW I665766B
Authority
TW
Taiwan
Prior art keywords
mass
parts
copper
silver
substrate
Prior art date
Application number
TW104105845A
Other languages
English (en)
Other versions
TW201541571A (zh
Inventor
青野良太
和田光祐
築地原雅夫
宮川健志
Original Assignee
日商電化股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商電化股份有限公司 filed Critical 日商電化股份有限公司
Publication of TW201541571A publication Critical patent/TW201541571A/zh
Application granted granted Critical
Publication of TWI665766B publication Critical patent/TWI665766B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0233—Sheets, foils
    • B23K35/0238—Sheets, foils layered
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/3006—Ag as the principal constituent
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49877—Carbon, e.g. fullerenes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/388—Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/124—Metallic interlayers based on copper
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/125—Metallic interlayers based on noble metals, e.g. silver
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/126—Metallic interlayers wherein the active component for bonding is not the largest fraction of the interlayer
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/126—Metallic interlayers wherein the active component for bonding is not the largest fraction of the interlayer
    • C04B2237/127—The active component for bonding being a refractory metal
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/368—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/407—Copper
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/60—Forming at the joining interface or in the joining layer specific reaction phases or zones, e.g. diffusion of reactive species from the interlayer to the substrate or from a substrate to the joining interface, carbide forming at the joining interface
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/74—Forming laminates or joined articles comprising at least two different interlayers separated by a substrate
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C49/00—Alloys containing metallic or non-metallic fibres or filaments
    • C22C49/02—Alloys containing metallic or non-metallic fibres or filaments characterised by the matrix material
    • C22C49/12—Intermetallic matrix material
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C49/00—Alloys containing metallic or non-metallic fibres or filaments
    • C22C49/14—Alloys containing metallic or non-metallic fibres or filaments characterised by the fibres or filaments
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • C22C5/08—Alloys based on silver with copper as the next major constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Products (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

本發明之課題係獲得一種陶瓷電路基板，其具有高的接合強度與優越的耐熱循環性，使得作為電子機器之動作可靠性提高的同時，散熱性也為優越。
本發明之解決手段係一種陶瓷電路基板，其係陶瓷基板之兩主面與金屬板為隔著銀-銅系焊料層而予以接合的陶瓷電路基板，其特徵為銀-銅系焊料層係由相對於銀粉末75至98質量份與銅粉末2至25質量份之合計100質量份而言，含有碳纖維(carbon fiber)0.3至7.5質量份與選自鈦、鋯、鉿、鈮、鉭、釩、錫之至少一種活性金屬1.0至9.0質量份的銀-銅系焊料所構成，上述碳纖維係平均長度15至400μm、平均直徑5至25μm、平均縱橫比3至28。

Description

陶瓷電路基板
本發明係關於一種陶瓷電路基板，其兼具高的接合強度及優越的耐熱循環特性。
作為功率模組等所利用的電路用基板，從導熱係數或成本、安全性等之觀點而言，有人利用氧化鋁、氧化鈹、氮化矽、氮化鋁等之陶瓷基板。該等陶瓷基板係接合銅或鋁等之金屬電路板或散熱板而作為電路基板使用。由於該等係對於樹脂基板或將樹脂層作為絕緣材之金屬基板具有優越的絕緣性及散熱性等，因此作為用以搭載高散熱性電子零件之基板使用。
於電梯、車輛、油電混合車等之類的功率模組用途中，使用一種陶瓷電路基板，其係利用焊料而將金屬電路板接合於陶瓷基板之表面，進一步將半導體元件搭載於金屬電路板之既定位置。近年來，對於隨著半導體元件之高積體化、高頻化、高輸出功率化等之源自半導體元件的散熱量增加，使用具有高導熱係數之氮化鋁燒結物或氮化矽燒結物的陶瓷基板。尤其，由於氮化鋁基板係導熱係數較氮化矽基板為高，因此適合作為用以搭載高散熱性電子元件之陶瓷電路基板。
但是，由於氮化鋁基板具有高導熱係數，相反地，機械強度或韌性等則低，因此有在裝配步驟之固定將會發生裂痕，或於附加熱循環時容易發生裂痕等之缺點。尤其，使用於汽車或電車、機床或機器人等之嚴酷載重、熱條件下所適用的功率模組之情形下，該缺點逐漸變得顯著。
因此，作為電子零件搭載用之陶瓷基板，尋求提高機械可靠性，雖然導熱係數較氮化鋁基板為差，但具優越的機械強度或韌性之氮化矽基板正受到矚目。
使用氮化矽基板之陶瓷電路基板係藉由例如以下所示之活性金屬法所製作。
活性金屬法係使含有如4A族元素或5A族元素的活性金屬之焊料層介於中間而將金屬板接合於陶瓷基板上之方法，一般而言，將銀-銅-鈦系焊料網版印刷於氮化矽基板之兩主面，在該印刷面上配置金屬電路板及金屬散熱板，藉由在適當溫度下加熱處理而接合陶瓷基板與金屬板。
進行如此方式所得之陶瓷電路基板，由於共價鍵結活性金屬之Ti與氮化物系陶瓷基板之N而成為TiN(氮化鈦)，並藉由該TiN而形成接合層，因此能獲得某種程度之高的接合強度。
另一方面，於車載用半導體模組等之中，進行高功率輸出化、高積體化，重複施加於陶瓷電路基板之熱應力有更增大之傾向。若變得無法承受該熱應力時，則會在陶瓷基板中發生微小裂痕。維持發生該微小 裂痕之狀態下，持續施加熱負載循環之情形，金屬板將會從陶瓷基板剝離而招致接合強度不良或熱阻抗不良。其結果，有作為電子機器之動作可靠性將會降低等之問題。基於如此之問題，關於承受得起熱應力的陶瓷電路基板之焊料構成，已有人進行如下之提案。
於專利文獻1中，揭示以提高陶瓷電路基板之耐熱循環特性作為目的，使接合陶瓷基板與金屬板之焊料中含有碳粉末是為有效。
先前技術文獻 專利文獻
專利文獻1 日本特開平9-283656號公報
然而，於近年來之車載用半導體模組等之中，急速發展進一步的高功率輸出化、高積體化，而對陶瓷電路基板尋求由以提高散熱性為目的之厚的金屬板、與以減低熱阻抗為目的之薄的陶瓷基板所構成之構成。金屬板為厚之情形，由於起因於陶瓷基板與金屬板之接合界面所發生之熱膨脹係數差的熱應力變得更為嚴重，因此於附加熱循環時，在陶瓷基板中容易發生微小裂痕。
再者，評估熱循環特性之熱循環評估一般為-40℃至125℃之溫度範圍，然而於已搭載今後期待作為下世代功率元件的SiC或GaN之類的寬能隙半導體的元件，由於動作溫度變高，熱應力將會變得越來越高。
如此之問題即使在將陶瓷基板作成氮化矽基板之情形，或使專利文獻1所揭示的焊料層中含有碳粉末之陶瓷電路基板中亦稱不上滿意之狀態。
再者，由於焊料中所含之非纖維狀碳粉末係即使在同為由碳原子所構成的碳成分間之石墨(graphite)粉末或鑽石粉末等之中也具有低的導熱係數，因此有阻礙陶瓷電路基板散熱性之可能性，故不佳。
本發明係有鑒於上述問題，而以獲得一種陶瓷電路基板為目的，其具有高的接合強度與優越的耐熱循環特性而使得作為電子機器之動作可靠性提高，同時散熱性也為優越。
本發明人等為了達成上述目的而鑽研之結果，獲得如下之見解：藉由使接合陶瓷基板與金屬板之焊料熱膨脹係數接近陶瓷基板而能提高電路基板之熱循環特性。再者，也獲得如下之見解而完成本發明：藉由將焊料中所含之碳成分作成碳纖維(carbon fiber)而能獲得散熱性優越的陶瓷電路基板。
亦即，本發明係一種陶瓷電路基板，其係陶瓷基板之兩主面與金屬板為隔著銀-銅系焊料層而予以接合的陶瓷電路基板，其特徵為銀-銅系焊料層係由相對於銀粉末75至98質量份及銅粉末2至25質量份之合計100質量份而言，含有碳纖維(carbon fiber)0.3至7.5質量份與選自鈦、鋯、鉿、鈮、鉭、釩及錫之至少一種活性金屬1.0至9.0質量份的銀-銅系焊料所構成，該碳纖 維係平均長度15至400μm、平均直徑5至25μm、平均縱橫比3至28。
所謂「陶瓷基板之兩主面與金屬板為隔著銀-銅系焊料層而予以接合」係意指在陶瓷基板之兩主面，金屬板分別隔著銀-銅系焊料層而予以接合。
若根據本發明，能製造一種氮化矽電路基板，其具有高的接合性，進一步在-40℃至150℃之熱循環試驗2000循環下，裂痕率低於1%。
[實施發明之形態]
作為本發明之陶瓷電路基板所用之陶瓷基板，並非被特別限定者，能以氮化矽、氮化鋁等之氮化物系陶瓷；氧化鋁、氧化鋯等之氧化物系陶瓷；碳化矽等之碳化物系陶瓷；硼化鑭等之硼化物系陶瓷等而使用。但是，為了以活性金屬法將金屬板接合於陶瓷基板，適合為氮化鋁、氮化矽等之非氧化物系陶瓷；再者，從優越的機械強度、破壞韌性之觀點，較佳為氮化矽基板。
雖然本發明之陶瓷基板的厚度並未被特別限定，但一般約為0.1至3.0mm者，尤其，若考量減低電路基板整體之熱電阻率時，較佳為1.0mm以下，更佳為0.4mm以下。
只要使用於本發明之金屬板的金屬為銅、鋁、鐵、鎳、鉻、銀、鉬、鈷之單體或其合金等之適用 活性金屬法的金屬，則無特別限定，而從導電性、散熱性之觀點，特佳為銅板。
本發明之銅板的純度較佳為90%以上，純度較90%為低之情形，於接合陶瓷基板與銅板時，有銅板與焊料之反應變得不足、或銅板變硬而降低電路基板的可靠性之情形。
本發明之銅板的厚度並未被特別限定，而一般為0.1至1.5mm者，尤其從散熱性之觀點，較佳為0.3mm以上，更佳為0.5mm以上。
本發明之焊料層係由含有碳纖維(carbon fiber)與選自鈦、鋯、鉿、鈮、鉭、釩、錫之至少一種活性金屬的銀-銅系焊料所構成。銀-銅系焊料之組成比較佳設定為容易生成共晶組成之組成比，特佳為考量來自電路銅板及散熱銅板之銅的熔入之組成。於銀粉末與銅粉末之合計100質量份中，銀粉末適合為75至98質量份，銅粉末適合為2至25質量份。銀粉末的量為75至98質量份以外之情形，由於焊料之熔融溫度將會上升，因此源自接合時之熱膨脹係數差的熱應力將會增加，耐熱循環性容易降低。
相對於銀粉末75至98質量份及銅粉末2至25質量份之合計100質量份而言，於構成本發明之焊料層的焊料中所含之碳纖維的量較佳為0.3至7.5質量份，更佳為0.5至3.5質量份。碳纖維的摻合量低於0.3質量份之情形，焊料之熱膨脹係數的降低為小，對改善電路基板之熱循環特性的助益為小。另一方面，較7.5質量 份為大之情形，陶瓷基板與金屬板之接合強度將會降低，故不佳。
碳纖維(carbon fiber)較佳為15至400μm之平均長度、且5至25μm之平均直徑、且3至28之平均縱橫比。更佳為22至160μm之平均長度、且7.5至10μm之平均直徑、4至10之平均縱橫比。平均長度較400μm為大之情形，且平均直徑較25μm為大之情形，且平均縱橫比較28為大之情形，將會變得難以使其均勻分散於焊料糊中。又，平均長度較15μm為小之情形，且平均直徑較5μm為小之情形，且平均縱橫比較4為小之情形，陶瓷基板與金屬板之接合強度將會降低，故不佳。
於本發明中，所謂「平均長度」係意指利用掃描型電子顯微鏡來觀測20條以上之碳纖維，利用影像解析來量測各纖維的長度所得之值的平均值。所謂「平均直徑」係意指利用掃描型電子顯微鏡來觀測20條以上之碳纖維，利用影像解析來量測各纖維的直徑所得之值的平均值。所謂「平均縱橫比」係意指利用上述「平均直徑」除上述「平均長度」之值。
碳纖維(carbon fiber)之種類只要為瀝青系碳纖維或聚丙烯腈系碳纖維即可。又，即使在碳纖維(carbon fiber)、有機黏結劑或有機溶劑中所含之碳成分、碳粉末、鑽石等同為由碳原子所構成的碳成分間，其物理化學特性或機械性質完全不同係周知之事實。但是，例如非纖維狀碳粉末由於導熱係數低，有阻礙陶瓷電路基板散熱性之可能性，故不佳。再者，有耐熱循環 特性降低之情形，故不佳。又，在鑽石粉末中，雖然導熱係數優越，但成本變高，故不佳。
相對於銀粉末72質量份以上及銅粉末28質量份以下之合計100質量份而言，構成焊料層之焊料中所含之活性金屬的量較佳為1.0至9.0質量份，更佳為3.0至5.5質量份。活性金屬之摻合量低於1.0質量份之情形，陶瓷基板與焊料之潤濕性並非良好，容易發生接合不良。另一方面，若活性金屬之摻合量超過9質量份時，則在接合界面所形成的脆弱之活性金屬氮化物層變得過剩，耐熱循環性將會降低。再者，活性金屬能選自鈦、鋯、鉿、鈮、鉭、釩及錫等之金屬，該等之中，適合為鈦。
乾燥基準下，用以構成焊料層所塗布的焊料之厚度較佳為5至40μm。若焊料之厚度低於5μm則有發生未反應部分之情形；另一方面，若超過40μm時，則有去除接合層之時間變長而降低生產性之情形。塗布方法並未被特別限定，能採用可均勻塗布於基板表面之網版印刷法、輥塗布法等之習知塗布方法。
陶瓷基板與金屬板之接合較佳在真空中、780℃至875℃之溫度且10至60分鐘之時間下接合。接合溫度較780℃為低之情形、或者接合時間較10分鐘為短之情形，陶瓷基板與焊料之接合性將會降低。另一方面，接合溫度較875℃為高之情形、或者接合時間較60分鐘為長之情形，源自接合時之熱膨脹係數差的熱應力將會增加，耐熱循環性容易降低。
為了在電路基板形成電路圖案，將蝕刻光阻塗布於金屬板而蝕刻。關於蝕刻光阻並無特別限制，例如，能使用一般所用之紫外線硬化型或熱硬化型者。關於蝕刻光阻之塗布方法並無特別限制，能採用例如網版印刷法等之習知塗布方法。
為了形成電路圖案而進行銅板之蝕刻處理。關於蝕刻液也無特別限制，可使用一般所用之氯化鐵溶液或氯化銅溶液、硫酸、過氧化氫水等；而作為較佳者，可舉出氯化鐵溶液或氯化銅溶液。在藉由蝕刻而去除不要之金屬部分的氮化物陶瓷電路基板中，殘留所塗布的焊料、其合金層、氮化物層等，一般使用鹵化銨水溶液、硫酸、硝酸等之無機酸、含有過氧化氫水之溶液而去除該等。於電路形成後進行蝕刻光阻之剝離，而剝離方法並未被特別限定，一般為使其浸漬於鹼水溶液中之方法等。
[實施例]
[實施例1]
在厚度0.25mm之氮化矽基板之兩主面，相對於銀粉末(福田金屬箔粉工業(股)製：AgC-BO)90質量份及銅粉末(福田金屬箔粉工業(股)製：SRC-Cu-20)10質量份之合計100質量份而言，塗布1.5質量份之平均長度120μm、平均直徑15μm、平均縱橫比8之碳纖維(日本Graphite Fiber(股)製：XN-100-15M)、與3.5質量份之鈦((股)大阪Titanium Technologies製：TSH-350)的活性金屬焊料，在真空條件下，以830℃且20分鐘之條件而將 厚度1.0mm之無氧銅板接合於電路面、且將1.0mm之無氧銅板接合於背面。
利用含有氯化銅之蝕刻液蝕刻所接合的電路基板而形成電路。進一步利用氟化銨/過氧化氫蝕刻液蝕刻焊料層而製作氮化矽電路基板。
銅板與氮化矽基板之接合性及電路基板之耐熱循環評估係利用下列之方法評估。
<銅板與氮化矽基板之接合性>
銅板與氮化矽基板之接合性係藉由剝離強度測定而評估。測定法係如下所示。用鉗子撕離氮化矽基板所接合的銅電路圖案之一部分之寬5mm圖案邊緣，將該接合基板固定於拉伸試驗機之台上，將該圖案邊緣裝配於拉伸試驗機之夾頭。此時，使氮化矽基板之表面與被撕離的該銅電路圖案之角度成為90°(鉛直方向)的方式來設置。之後，使拉伸試驗機動作，憑藉夾頭來使被撕離的該圖案沿上方拉伸而移動，測定此時之最大撕離載重。用寬度(0.5cm)除該最大撕離載重而算出接合強度。將結果顯示於表3。
<耐熱循環性之評估>
對於所製作的氮化矽電路基板，利用將在-40℃下30分鐘、在25℃下10分鐘、在150℃下30分鐘、在25℃下10分鐘設為1循環之耐熱循環試驗，進行2000循環反覆試驗。之後，使用氯化銅液、及氟化銨/過氧化氫蝕刻液而從氮化矽電路基板剝離銅板及焊料層，利用影像解析軟體GIMP2(臨界值140)，使氮化矽基板表面之水平 裂痕面積予以二值化而算出後，從水平裂痕面積/電路圖案面積(亦即，水平裂痕面積相對於電路圖案面積之比例)而算出裂痕率(%)。將結果顯示於表3。
如表3所示，於將銅板接合於氮化矽板時，如實施例1，相對於銀粉末90質量份及銅粉末10質量份之合計100質量份而言，藉由以摻合含有1.5質量份之碳纖維之平均長度120μm、平均直徑15μm以下、平均縱橫比8之碳纖維(carbon fiber)、與3.5質量份之鈦，以780℃至875℃之溫度且10至60分鐘之時間下接合而可獲得不會使接合性降低且耐熱循環之評估為裂痕率0.01%之電路基板，證實可獲得裂痕率1%以之電路基板。
[實施例2至24、比較例1至13]
除了改變顯示於表1、2之條件以外，與實施例1同樣地進行。再者，於比較例13中，使用非纖維狀碳粒子取代碳纖維。與實施例1同樣地進行銅板與氮化矽基板之接合性、及耐熱循環之評估。將結果顯示於表3、4。
從表3、4，於將銅板接合於氮化矽板時，相對於銀粉末75至98質量份及銅粉末2至25質量份之合計100質量份而言，藉由以含有0.3至7.5質量份之碳纖維之平均長度15至400μm、平均直徑5至25μm、平均縱橫比3至28之碳纖維(carbon fiber)、與1.0至9.0質量份之選自鈦、鋯、鉿、鈮、鉭、釩及錫之至少一種活性金屬之摻合比，以780℃至875℃之溫度且10至60分鐘之時間下接合，而可獲得不會使接合性降低、耐熱循環之評估的裂痕率1%以下之電路基板。

Claims (1)

  1. 一種陶瓷電路基板，其係陶瓷基板之兩主面與金屬板為隔著銀-銅系焊料層而予以接合的陶瓷電路基板，其特徵為該銀-銅系焊料層係由相對於銀粉末75至98質量份與銅粉末2至25質量份之合計100質量份而言，含有碳纖維(carbon fiber)0.3至7.5質量份與選自鈦、鋯、鉿、鈮、鉭、釩及錫之至少一種活性金屬1.0至9.0質量份的銀-銅系焊料所構成，該碳纖維係平均長度15至400μm、平均直徑5至25μm、平均縱橫比3至28。
TW104105845A 2014-02-21 2015-02-24 陶瓷電路基板 TWI665766B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-031262 2014-02-21
JP2014031262 2014-02-21

Publications (2)

Publication Number Publication Date
TW201541571A TW201541571A (zh) 2015-11-01
TWI665766B true TWI665766B (zh) 2019-07-11

Family

ID=53878405

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104105845A TWI665766B (zh) 2014-02-21 2015-02-24 陶瓷電路基板

Country Status (7)

Country Link
US (1) US10424529B2 (zh)
EP (1) EP3109222B1 (zh)
JP (1) JP6487901B2 (zh)
KR (1) KR102339805B1 (zh)
CN (1) CN106061923B (zh)
TW (1) TWI665766B (zh)
WO (1) WO2015125907A1 (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017065935A (ja) * 2015-09-28 2017-04-06 デンカ株式会社 セラミックス回路基板
JP6508182B2 (ja) * 2016-12-16 2019-05-08 株式会社豊田中央研究所 半導体モジュールとその製造方法
KR102479866B1 (ko) * 2017-05-30 2022-12-20 덴카 주식회사 세라믹스 회로 기판 및 그 제조 방법
CN110709369A (zh) * 2017-05-30 2020-01-17 电化株式会社 陶瓷电路基板和使用其的模块
KR102139194B1 (ko) 2018-08-17 2020-07-30 (주) 존인피니티 질화물 세라믹스 활성금속 브레이징 기판의 제조방법
KR102574378B1 (ko) * 2018-10-04 2023-09-04 현대자동차주식회사 파워모듈
WO2021044854A1 (ja) 2019-09-02 2021-03-11 株式会社 東芝 接合体、回路基板、及び半導体装置
KR102606192B1 (ko) 2021-12-30 2023-11-29 주식회사 큐프럼 머티리얼즈 구리 접합 질화물 기판용 구리 접합층 니켈 합금 조성물

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5127969A (en) * 1990-03-22 1992-07-07 University Of Cincinnati Reinforced solder, brazing and welding compositions and methods for preparation thereof
US6613450B2 (en) * 2001-09-28 2003-09-02 Dowa Mining Co., Ltd. Metal/ceramic bonding article
US20090101392A1 (en) * 2005-08-29 2009-04-23 Hitachi Metals, Ltd. Circuit board and semiconductor module using this, production method for circuit board

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5495979A (en) * 1994-06-01 1996-03-05 Surmet Corporation Metal-bonded, carbon fiber-reinforced composites
JP4077888B2 (ja) * 1995-07-21 2008-04-23 株式会社東芝 セラミックス回路基板
JP3834351B2 (ja) 1996-04-09 2006-10-18 株式会社東芝 セラミックス回路基板
MY134159A (en) * 2000-11-16 2007-11-30 Quantum Chemical Tech Singapore Pte Ltd Improvements in or relating to solders
JP2003204021A (ja) * 2002-01-10 2003-07-18 Sumitomo Metal Electronics Devices Inc 半導体モジュール用基板
CN100471668C (zh) * 2002-11-20 2009-03-25 同和控股（集团）有限公司 金属/陶瓷粘合制品
JP4394477B2 (ja) * 2003-03-27 2010-01-06 Ｄｏｗａホールディングス株式会社 金属−セラミックス接合基板の製造方法
ITMI20031524A1 (it) * 2003-07-24 2005-01-25 Ansaldo Ricerche S R L Societa Pe R Lo Sviluppo Proceddimento per ottenere giunti brasati ad alta resistenza di materiali compositi a piu'strati di tipo ceramico-ceramico e metallo-ceramico, e materiali compositi a piu'strati ottenuti mediante il medesino procedimento
US8518554B2 (en) * 2006-07-04 2013-08-27 Kabushiki Kaisha Toshiba Ceramic metal composite and semiconductor device using the same
DE102009041574A1 (de) * 2008-10-29 2010-05-12 Electrovac Ag Verbundmaterial, Verfahren zum Herstellen eines Verbundmaterials sowie Kleber oder Bondmaterial
JP2010192656A (ja) * 2009-02-18 2010-09-02 Sumitomo Electric Ind Ltd 接合体及びこれを利用した放熱構造体とその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5127969A (en) * 1990-03-22 1992-07-07 University Of Cincinnati Reinforced solder, brazing and welding compositions and methods for preparation thereof
US6613450B2 (en) * 2001-09-28 2003-09-02 Dowa Mining Co., Ltd. Metal/ceramic bonding article
US20090101392A1 (en) * 2005-08-29 2009-04-23 Hitachi Metals, Ltd. Circuit board and semiconductor module using this, production method for circuit board

Also Published As

Publication number Publication date
EP3109222A4 (en) 2017-08-30
EP3109222A1 (en) 2016-12-28
KR102339805B1 (ko) 2021-12-15
CN106061923B (zh) 2019-07-26
TW201541571A (zh) 2015-11-01
US10424529B2 (en) 2019-09-24
JP6487901B2 (ja) 2019-03-20
WO2015125907A1 (ja) 2015-08-27
EP3109222B1 (en) 2018-09-26
US20160358840A1 (en) 2016-12-08
KR20160124118A (ko) 2016-10-26
CN106061923A (zh) 2016-10-26
JPWO2015125907A1 (ja) 2017-03-30

Similar Documents

Publication Publication Date Title
TWI665766B (zh) 陶瓷電路基板
KR102504621B1 (ko) 세라믹스 회로 기판 및 그것을 사용한 모듈
KR102516917B1 (ko) 세라믹스 회로 기판 및 그 제조 방법과 그것을 사용한 모듈
JP6742073B2 (ja) セラミックス回路基板
KR102521140B1 (ko) 세라믹스 회로 기판 및 그 제조 방법
JP2014118310A (ja) セラミックス回路基板
TWI713746B (zh) 功率模組用基板
CN106537580B (zh) 陶瓷电路基板及其制造方法
JP2022161988A (ja) セラミックス回路基板及びその製造方法
JP2016051778A (ja) 金属−セラミックス接合基板
JP6797018B2 (ja) ろう材及びこれを用いたセラミック基板
JP2017065935A (ja) セラミックス回路基板
JP6307386B2 (ja) セラミックス回路基板
JP6621353B2 (ja) 耐熱性セラミックス回路基板
KR102606192B1 (ko) 구리 접합 질화물 기판용 구리 접합층 니켈 합금 조성물
JP2017041567A (ja) セラミックス回路基板の製造方法