WO2018193664A1 - Dispositif filmogène et son procédé de nettoyage - Google Patents

Dispositif filmogène et son procédé de nettoyage Download PDF

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Publication number
WO2018193664A1
WO2018193664A1 PCT/JP2017/045681 JP2017045681W WO2018193664A1 WO 2018193664 A1 WO2018193664 A1 WO 2018193664A1 JP 2017045681 W JP2017045681 W JP 2017045681W WO 2018193664 A1 WO2018193664 A1 WO 2018193664A1
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Prior art keywords
substrate
gas
film
processing container
substrate holding
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PCT/JP2017/045681
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English (en)
Japanese (ja)
Inventor
正幸 原島
志生 佐野
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東京エレクトロン株式会社
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Application filed by 東京エレクトロン株式会社 filed Critical 東京エレクトロン株式会社
Priority to EP17906757.4A priority Critical patent/EP3614419B1/fr
Priority to KR1020197033099A priority patent/KR102270548B1/ko
Priority to JP2019513222A priority patent/JP6868686B2/ja
Priority to US16/604,391 priority patent/US11390944B2/en
Publication of WO2018193664A1 publication Critical patent/WO2018193664A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0064—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes
    • B08B7/0071—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes by heating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Definitions

  • the present invention relates to a film forming apparatus and a cleaning method thereof.
  • SiC silicon carbide
  • a SiC film is formed on a SiC substrate by epitaxial growth in which a film having the same orientation as the substrate crystal is grown on a single crystal substrate.
  • An apparatus for forming a SiC film by epitaxial growth includes a substrate holding unit that holds and heats a substrate to be processed, and a processing container that houses the substrate holding unit.
  • a heat insulating material is provided between the substrate holding part and the processing container, and an exhaust device is connected to the processing container via an exhaust pipe such as an exhaust manifold. Is reduced to a reduced pressure atmosphere by an exhaust device during film formation.
  • unnecessary reaction products adhere to portions other than the substrate to be processed, such as the substrate holding portion, the exhaust pipe, and the heat insulating material. If attached in this way, stress may be generated in the substrate holding portion.
  • unnecessary reaction products may grow in the form of a tree in the vicinity of the opening serving as the substrate loading / unloading port and the gas introduction port, and may come into contact with the substrate to be processed during automatic transfer of the substrate to be processed. Therefore, in order to remove unnecessary attached reaction products, that is, for cleaning the film forming apparatus, conventionally, there are a method of periodically wiping and polishing, and a method of supplying hydrogen while heating the substrate holding part. It was taken.
  • Patent Document 1 relates to a cleaning method of a film forming apparatus, and after forming a thin film of a metal substance such as amorphous SiC by a CVD (Chemical Vapor Deposition) method, cleaning of the CVD furnace is performed by chlorine trifluoride (ClF 3 ). And the like, and the removal of substances remaining in the furnace after the cleaning by flowing hydrogen (H 2 ) gas.
  • CVD Chemical Vapor Deposition
  • Unnecessary reaction products adhering at the time of film formation in the SiC film formation apparatus include unstable and easily burned deposits such as silane (SiH X ), and therefore, as described above, wiping and polishing periodically.
  • SiH X silane
  • the work time including the cooling of the processing container becomes long, so that the apparatus downtime becomes long.
  • hydrogen is supplied while heating the substrate holding part as described above, unnecessary silicon and 3C—SiC cannot be sufficiently removed.
  • the present invention has been made in view of the above circumstances, can be effectively cleaned in a short time, and has a film forming apparatus with few impurities and defects in the film formed after cleaning, and a cleaning method therefor The purpose is to provide.
  • One embodiment of the present invention for solving the above problems is to supply a raw material gas to a processing container in which a substrate holding portion for holding a substrate to be processed is provided and the inside of which is decompressed, and to heat the substrate to be processed.
  • a reaction product removal step that is removed by supplying a fluorine-based cleaning gas, and a substance that remains in the reaction product removal step and that causes unnecessary impurities and defects during the next film formation are placed in the processing vessel.
  • a residue removing step for removing the residue by supplying air.
  • Another aspect of the present invention is to supply a raw material gas to a processing container provided with a substrate holding unit for holding a substrate to be processed and connected to an exhaust line, and heat the substrate to be processed.
  • a film forming apparatus for forming a film on the substrate to be processed, a fluorine-based cleaning gas supply line for supplying a fluorine-based cleaning gas into the processing container, and an air introduction line for introducing the atmosphere into the processing container; And controlling the exhaust line to remove reaction products generated during film formation and adhering to portions other than the substrate to be processed by supplying a fluorine-based cleaning gas into the processing container after film formation.
  • a control unit is provided that removes impurities that remain and cause unnecessary impurities and defects in the next film formation by supplying air into the processing container.
  • cleaning can be performed effectively in a short time, and impurities and defects in the film formed after cleaning can be reduced.
  • ClF is a diagram showing an impurity concentration distribution in the depth direction of the SiC epitaxial film formed before and after cleaning for removing only using 3 gas.
  • ClF is a diagram illustrating a defect map of the surface of the SiC epitaxial film formed before and after cleaning for removing only using 3 gas. It is the figure which showed typically the outline of the structure of the film-forming apparatus of the cleaning target of the cleaning method which concerns on embodiment of this invention. It is the figure which showed typically the outline of the structure of the processing container of the film-forming apparatus of FIG. It is a figure which shows the flowchart for demonstrating the board
  • FIG. 1 It is a figure which shows the flowchart for demonstrating the board
  • FIG. It is a figure which shows the result of having imaged the surface of an Example and the comparative example 2 using the optical microscope. It is a figure which shows distribution of the defect in an Example and the comparative example 2.
  • FIG. It is a figure which shows the defect map of the surface in an Example and the comparative example 2.
  • the present inventor When removing unnecessary reaction products adhering at the time of film formation in an SiC film deposition apparatus by epitaxial growth, the present inventor performs conventional regular wiping and polishing or heating the substrate holder. In the method of supplying hydrogen gas or the like, there are problems as described above. Therefore, in the SiC film deposition apparatus, it was examined to remove unnecessary reaction products by supplying ClF 3 gas after deposition. As a result of the examination, when removing the reaction product using ClF 3 gas, the temperature of the substrate holding part (see reference numeral 15 in FIG. 4) is set to a temperature higher than room temperature (for example, 500 ° C.). 3C-SiC formed on the substrate, SiH X deposit formed on the inner wall of the exhaust pipe (see reference numeral 12a in FIG. 3), and silicon (Si) deposit formed on the gas inlet into the substrate holder are removed. It was confirmed.
  • FIG. 1 is a diagram showing the impurity concentration distribution in the depth direction between an SiC film formed by epitaxial growth before cleaning using ClF 3 gas and an SiC film formed after cleaning, and the impurity concentration of boron (B) Show the distribution.
  • the horizontal axis represents the depth from the substrate surface, and the vertical axis represents the concentration.
  • the thickness of the formed SiC film is 7 ⁇ m.
  • the boron concentration in the formed SiC film becomes about 10 times that before cleaning. Boron serves as a P-type dopant in the SiC epitaxial growth film.
  • FIG. 2 is a diagram showing a defect map on the surface of the SiC film formed by epitaxial growth
  • FIG. 2A is a defect map on the surface of the SiC film formed before cleaning using ClF 3 gas
  • (B) is a SiC film formed after cleaning.
  • the defect map is a black mark at a position where a defect exists on the substrate. As shown in the figure, a very large number of defects exist on the surface of the SiC film formed after cleaning.
  • the present inventors have studied to perform hydrogen annealing as cleaning after removing unnecessary reaction products using ClF 3 gas.
  • the carrier concentration of the SiC film can be set to a desired value by performing hydrogen annealing in which the temperature of the susceptor is raised and maintained for a predetermined time while flowing hydrogen gas into the processing chamber. The concentration of unnecessary impurities could be reduced.
  • the above-mentioned defects occur even when hydrogen annealing is performed for a long time, and also when dummy runs are performed a plurality of times instead of hydrogen annealing.
  • the dummy run is a film forming process that is performed preliminarily before film formation as a product.
  • FIG. 3 is a diagram schematically showing a schematic configuration of a film forming apparatus to be cleaned by the cleaning method according to the embodiment of the present invention.
  • FIG. 4 is a diagram schematically showing an outline of the structure of the processing container of the film forming apparatus of FIG.
  • the film forming apparatus 1 in FIG. 3 includes a processing container 11 on a substantially rectangular parallelepiped.
  • An exhaust line 12 is connected to the processing container 11, and the processing container 11 can be adjusted to a predetermined reduced pressure state (pressure) by the exhaust line 12.
  • the exhaust line 12 has an exhaust pipe 12 a with one end connected to the processing container 11.
  • the exhaust pipe 12a is composed of an exhaust manifold or the like, and a vacuum pump 12b composed of a mechanical booster pump or the like is connected to the side opposite to the processing container side.
  • a pressure adjusting unit 12c that adjusts the pressure in the processing vessel 11 is provided, which includes an APC (automatic pressure control) valve, a proportional control valve, and the like.
  • the processing vessel 11 is provided with a pressure gauge 13, and the pressure in the processing vessel 11 is adjusted by the pressure adjustment unit 12 c based on the measurement result of the pressure gauge 13.
  • the processing container 11 includes a hollow square columnar processing container main body 11a having openings at both ends, and a side wall 11b connected to the opening.
  • a coil 14 connected to a high-frequency power source 14a is provided outside the processing container main body 11a.
  • the coil 14 induction-heats the substrate to be processed in the processing container 11 and a substrate holding unit described later.
  • a substrate holding unit 15 that holds and heats the SiC substrate W as a substrate to be processed is provided inside the processing container 11. Note that the surface orientation of the surface of the SiC substrate W is, for example, (0001).
  • the substrate holding unit 15 includes a mounting table 15a on which a SiC substrate W (hereinafter referred to as a substrate W) is mounted, and a housing structure 15b that houses the mounting table 15a.
  • the substrate holder 15 is induction-heated by the coil 14.
  • the substrate W is heated by radiation and heat conduction from the substrate holder 15 that is induction-heated in addition to induction heating from the coil 14 of the substrate W itself. With such a configuration, the substrate W can be efficiently heated with good temperature uniformity.
  • the processing container body 11a is made of a material (for example, quartz) that can withstand temperature rise and has a small dielectric loss.
  • the mounting table 15a and the housing structure 15b of the substrate holding unit 15 are made of a conductive material that has high heat resistance and can be easily heated by induction heating.
  • the surface is coated with a SiC film as a protective film. It is comprised from the member made from graphite.
  • the housing structure 15b of the substrate holding unit 15 is formed in a rectangular parallelepiped shape having openings on two surfaces facing each other, and a film forming source gas is supplied from the opening on one surface, and the other surface The material gas is discharged from the opening.
  • the source gas supplied onto the substrate W is supplied and discharged along a direction parallel to the substrate W.
  • the substrate holding part 15 is formed using, for example, a carbon material that is so dense as to be called a so-called bulk material, and the heat insulating material 16 is made of, for example, a fibrous carbon material that has a significantly higher porosity than the bulk material. Formed using.
  • maintaining this heat insulating material 16 in the state which spaced apart the heat insulating material 16 from the process container 11 is provided in the outer side of the heat insulating material 16. As shown in FIG.
  • the processing container 11 is configured to be supplied with a raw material gas or the like as a raw material for film formation through a gas supply line 17.
  • the gas supply line 17 includes a gas supply pipe 17a connected to the processing container 11, and gas supply pipes 17b 1 to 17b 5 connected to the gas supply pipe 17a.
  • the gas supply pipes 17b 1 to 17b 5 are provided with mass flow controllers (MFC) 17c 1 to 17c 5 and valves 17d 1 to 17d 5 , respectively.
  • the gas supply pipe 17b 1 is connected to a gas supply source 17e 1, SiH 4 gas is supplied from the wherein the source 17e 1.
  • gas supply sources 17e 2 to 17e 5 are connected to the gas lines 17b 2 to 17b 5 , respectively. From the gas supply sources 17e 2 to 17e 5 , C 3 H 8 gas, H 2 gas, ClF 3 gas, Ar Gas is supplied.
  • SiH 4 gas, C 3 H 8 gas, and H 2 gas are supplied from the gas supply pipes 17b 1 to 17b 3 as source gases for film formation. It is supplied to the processing container 11. Further, when the processing container 11 is cleaned, one of ClF 3 gas, H 2 gas, and Ar gas, or two or more of these gases are supplied from the gas supply pipes 17b 3 to 17b 5. It is mixed and supplied to the processing container 11.
  • an atmosphere introduction line 18 is connected upstream of the pressure adjustment unit 12 c in the exhaust pipe 12 a in order to introduce the atmosphere into the treatment container 11 when cleaning the treatment container 11.
  • the air introduction line 18 has a pipe 18a having one end connected to the exhaust pipe 12a and the other end formed with an air introduction port 18b.
  • the pipe 18a is provided with a mass flow controller (MFC) 18c and a valve 18d in order from the exhaust pipe 12a side.
  • MFC mass flow controller
  • the air introduction line 18 is not limited to the exhaust pipe 12a as long as the inside of the processing vessel 11 can be in an air atmosphere.
  • the pipe 18a is preferably provided with a filter (not shown) in order to remove dust and dirt from the atmosphere.
  • the film forming apparatus 1 includes a control unit 100.
  • the control unit 100 is, for example, a computer and has a program storage unit (not shown).
  • the program storage unit also stores a program for controlling each device such as a valve, an MFC, a high frequency power supply, and a pressure adjustment unit to perform a film forming process and a cleaning process for the film forming apparatus 1.
  • the above program is recorded on a computer-readable storage medium such as a computer-readable hard disk (HD), flexible disk (FD), compact disk (CD), magnetic optical desk (MO), or memory card. May have been installed in the control unit 100 from the storage medium.
  • a computer-readable storage medium such as a computer-readable hard disk (HD), flexible disk (FD), compact disk (CD), magnetic optical desk (MO), or memory card. May have been installed in the control unit 100 from the storage medium.
  • FIG. 5 is a flowchart for explaining an example of the substrate processing according to the first embodiment.
  • the substrate W is loaded into the processing container 11 through a gate valve (not shown) using a transfer means (not shown) and placed on the mounting table 15a (step S1).
  • the source gas is supplied into the processing container 11 and the substrate W is induction-heated to form a SiC film on the substrate W by epitaxial growth (step S2). Specifically, the valves 17d 1 to 17d 3 are opened, the flow rates are adjusted by the MFCs 17c 1 to 17c 3 , and SiH 4 gas, C 3 H 8 gas, and H 2 gas are supplied into the processing vessel 11. Further, the substrate W is heated by applying high frequency power to the coil 14 from the high frequency power source 14a.
  • the pressure in the processing chamber 11 is, for example, 10 Torr to 600 Torr, and the flow rates of SiH 4 gas, C 3 H 8 gas, and H 2 gas are, for example, 10 to 600 sccm, 10 to 600 sccm, and 10 to 200 slm, respectively.
  • the temperature of the substrate W is, for example, 1500 ° C. to 1700 ° C.
  • N 2 gas may be added to the source gas, and when it is made p-type, TMA (trimethylaluminum) may be added to the source gas.
  • step S3 the valves 17d 1 to 17d 3 are closed, the supply of the source gas is stopped, and then the substrate W is unloaded from the processing container 11 through a gate valve (not shown) (step S3). While the supply of the high frequency power to the coil 14 may be interrupted while the substrate W is being carried out, the high frequency power is supplied to the coil 14 while controlling the temperature of the substrate holding unit 15 to be optimal in the next process. Is preferred.
  • ClF 3 gas is supplied into the processing container 11 to remove unnecessary reaction products attached to portions other than the substrate W during film formation (step S4). Specifically, the valves 17d 4 and 17d 5 are opened, the flow rate is adjusted by the MFCs 17c 4 and 17c 5 , and the ClF 3 gas and the Ar gas for dilution are supplied into the processing container 11.
  • the pressure in the processing container 11 is, for example, 10 Torr to 100 Torr
  • the flow rate of the ClF 3 gas is, for example, 100 to 2000 sccm
  • the temperature of the substrate holder 15 is, for example, 400 ° C. to 600 ° C. ° C.
  • the temperature of the substrate holding part 15 is preferably 400 ° C. or higher in order to increase the etching rate of the reaction product (SiC) adhering to the substrate holding part 15.
  • SiC reaction product adhering to the substrate holding part 15.
  • the temperature of surrounding members such as the processing container 11 also rises, and the surrounding members may be etched by the ClF 3 gas, so the temperature of the substrate holding part 15 is 600. C. or lower is preferable.
  • the ClF 3 gas is discharged from the processing container 11 (step S5). Specifically, the left valve 17d 4 and the valve 117d 5 to the open state to the closed state, and adjust the flow rate in MFC17c 5, by supplying the Ar gas into the processing vessel 11, ClF in the processing vessel 11 3 gas is discharged.
  • the atmosphere is introduced into the processing container 11, and thereby, a predetermined substance remaining after cleaning using the ClF 3 gas, that is, an unnecessary impurity and a factor of defects in the next film formation
  • the material to be removed is removed (step S6).
  • the pressure in the processing container 11 is controlled to be, for example, 10 kPa to 65 kPa, and the introduction of the atmosphere is performed for 0.5 to 2.0 hours.
  • the introduction of air is performed for 0.5 to 2.0 hours from the time when the temperature is 350 ° C. or lower.
  • hydrogen annealing is performed by supplying H 2 gas into the processing vessel 11 (step S7). Specifically, the valve 18 d is closed and the valve 17 d 3 is opened, the flow rate is adjusted by the MFC 17 c 3 , and H 2 gas is supplied into the processing container 11.
  • high frequency power is applied to the coil 14 from the high frequency power source 14 a to heat the substrate holding unit 15.
  • the flow rate of H 2 gas is, for example, 10 to 200 slm
  • the temperature of the substrate holder 15 is, for example, 1500 ° C. or higher.
  • step S1 After the hydrogen annealing, the process is returned to step S1, another SiC substrate is carried into the processing container 11, and the processes of steps S1 to S7 are repeated.
  • the series of cleaning processes in steps S4 to S7 may be performed every time a film is formed on a plurality of SiC substrates.
  • ClF 3 gas is supplied to the processing container 11 after the film formation, and therefore a variety of unnecessary reaction products in the film formation apparatus 1 are removed. be able to.
  • this reaction product only the substrate holding part 15 is selectively heated by induction heating, so that the hard 3C—SiC polycrystal grown on the mounting table 15a of the substrate holding part 15 is removed at a high temperature, Depots that react easily with ClF 3 gas such as Si and Si-rich dendritic products adhering to the vicinity of the gas inlet of the housing structure 15b of the substrate holding unit 15 and SiH X adhering to the exhaust pipe 12a are removed at a low temperature.
  • SiC, Si, and SiH X are considered to be removed by reacting with ClF 3 gas according to the following reaction formula.
  • air is introduced into the processing container 11 after the reaction product removal step using ClF 3 gas, thereby remaining after the reaction product removal step.
  • This material can be removed.
  • the predetermined substance reacts with moisture in the atmosphere and is discharged from the processing container 11. Since the predetermined substance can be removed in this manner, the amount of unnecessary impurities and defects in the SiC film formed after a series of cleaning processes can be greatly reduced.
  • the hydrogen annealing process is performed after the residual substance removing process by introducing air into the atmosphere, but it may be performed before the residual substance removing process.
  • it is possible to remove substances that are generated in the reaction product removal process using ClF 3 gas and cannot be removed in the remaining substance removal process by introducing air.
  • the surface of 3C—SiC on the mounting table 15a may be altered by ClF 3 gas, and the surface may become a carbon-rich layer.
  • the existence of particles in the deposition atmosphere and the growth under high C / Si conditions are known as the cause of triangular defects, and carbon powder from the carbon-rich layer can become particles that cause triangular defects.
  • the cleaning method of this embodiment includes a step of supplying Ar gas into the processing container 11 and discharging the atmosphere in the processing container 11 after removing the residual substances after the reaction product removing process by introducing the atmosphere. Also good. Thereby, it is possible to prevent moisture and oxygen in the atmosphere from reacting with hydrogen gas in the hydrogen annealing step, and it is possible to prevent nitrogen in the atmosphere from being taken in as a dopant during subsequent film formation.
  • the gas used in the step of exhausting air may be other than Ar gas as long as it does not contain moisture or oxygen and is not taken in as a dopant during the subsequent film formation.
  • the cleaning method of this embodiment may include a step of supplying Ar gas into the processing vessel 11 and discharging the hydrogen gas in the processing vessel 11 after the hydrogen annealing step.
  • FIG. 6 is a flowchart for explaining an example of the substrate processing according to the second embodiment.
  • step S7 after the hydrogen annealing in step S7, the process is returned to step S1.
  • a SiC film as a protective film is formed on the surface of the substrate holding unit 15, in other words, the surface of the substrate holding unit 15 is made of SiC.
  • Coating with a film step S11). Specifically, after completion of the hydrogen annealing process in S7 (for example, after a predetermined time has elapsed since the start of the supply of hydrogen gas during the hydrogen annealing process), the valves 17d 1 and 17d 2 are maintained while the valve 17d 3 is kept open.
  • the flow rate is adjusted by the MFCs 17c 1 and 17c 2 , and SiH 4 gas and C 3 H 8 gas are supplied into the processing vessel 11. Thereby, a SiC film of about 10 ⁇ m, for example, is formed on the surface of the substrate holding part 15 on the substrate W side after the processing of step S1 to step S7 is performed.
  • step S1 After the coating of the SiC film, the process returns to step S1, another SiC substrate is carried into the processing container 11, and the processes of steps S1 to S7 and step S11 are repeated.
  • the hydrogen annealing step and the SiC film coating step are performed after the residual material removing step by introducing air, but may be performed before the residual material removing step.
  • the substrate holding part 15 is composed of a graphite member whose surface is coated with a SiC film.
  • the SiC film on the surface of the substrate holding part 15 is removed in the removal step using ClF 3 gas in step S5. Removed and exposed graphite.
  • the surface of the substrate holding part 15 is coated with a SiC film in Step S11 after the removal process using ClF 3 gas in Step S5, graphite is formed in the substrate holding part 15 during film formation after cleaning. There is no exposure. Therefore, it is possible to prevent a defect caused by graphite particles constituting the substrate holding part 15 or an abnormality in impurity concentration caused by scattering of carbon atoms during film formation after cleaning.
  • the lifetime of the substrate holding part 15 can be extended by coating the substrate holding part 15 with a SiC film of about 10 ⁇ m for each cleaning as in this embodiment.
  • the pressure in the processing vessel 11 is, for example, 10 Torr to 600 Torr, and the flow rates of SiH 4 gas, C 3 H 8 gas, and H 2 gas are, for example, 10 to 600 sccm, 10 to 600 sccm, and 100, respectively.
  • the temperature of the substrate holding unit 15 is, for example, 1600 to 1700 ° C. More specifically, the flow rates of the SiH 4 gas and the C 3 H 8 gas are adjusted such that, for example, the C / Si ratio is 0.5 for the first few minutes, and then the C / Si ratio is changed.
  • the flow rate of the C 3 H 8 gas is increased so that becomes 0.8.
  • C 3 H 8 after increase of the flow rate of the gas it is possible to form a desired film thickness of the SiC film on the surface of the substrate holder 15 by holding the SiH 4 gas and C 3 H 8 gas, for example 30 minutes.
  • the C / Si ratio at the start of the SiC film formation is lowered to 0.5 or the like, whereby the graphite of the substrate holding portion 15 and the SiC formed in the coating process. Adhesion with the film can be improved.
  • the SiC film may be formed on the SiC film as the protective film of the substrate holding unit 15 under the same conditions as in the film formation.
  • the C / Si ratio is 1.2.
  • the propane flow rate is increased to about 1.4 and a predetermined flow rate of dopant gas is allowed to flow, and this state is maintained for a predetermined time (for example, 30 minutes).
  • the substrate W is directly mounted on the mounting table 15a.
  • the substrate W is carried in and out in units of flat plate holders capable of holding a plurality of substrates W.
  • a holder may be mounted on the mounting table 15a.
  • a holder that is maintained by polishing and does not hold the substrate W may be placed on the mounting table 15a.
  • the accommodation structure and the holder of the substrate holding part 15 can be simultaneously coated with the SiC film.
  • ClF 3 gas is used to remove unnecessary reaction products attached during film formation, but other fluorine-based cleaning gases such as ClF gas and ClF 5 gas may be used. Good.
  • the source gas supplied onto the substrate W is supplied and discharged along the direction parallel to the substrate W.
  • the source gas is supplied from the direction perpendicular to the substrate W.
  • the cleaning method of this embodiment can also be applied to a film forming apparatus.
  • An example is an SiC substrate W on which an SiC film is formed after the cleaning method of the first embodiment is performed on the film forming apparatus 1 of FIG.
  • the cleaning method according to the embodiment after the reaction product removal step using ClF 3 gas, the step of removing the residual material by introducing air into the atmosphere is performed with an air flow rate of 7 slm, a pressure in the processing container 11 of 70 kPa, and the substrate holding unit 15. Was performed under the condition of room temperature.
  • the SiC film is formed after the film forming apparatus 1 in FIG. 4 is subjected to the cleaning method including all the steps included in the cleaning method of the present embodiment except the residual substance removing step by introducing air.
  • Comparative Example 2 is a SiC substrate W on which a SiC film is formed after performing a cleaning method including the following Ar gas introduction process on the film forming apparatus 1 of FIG.
  • the cleaning method according to the comparative example includes a step of introducing Ar gas into the processing container 11 in place of the residual substance removing step by introducing the air in the cleaning method according to the first embodiment. Is the same as that of the cleaning method according to the first embodiment.
  • the Ar gas introduction step is performed after the reaction product removal step using ClF 3 gas, the atmospheric flow rate is 7 slm, the pressure in the processing container 11 is 70 kPa, and the temperature of the substrate holding unit 15 is 550. It was performed under the condition of ° C.
  • the thickness of the SiC film on the SiC substrate W of Example and Comparative Examples 1 and 2 is 7 ⁇ m.
  • the reaction product removing process using the ClF 3 gas is performed using the Ar gas flow rate of 13 slm, the processing chamber 11 pressure of 5 kPa, and the substrate holding unit 15. The temperature was 550 ° C.
  • FIG. 7 is a diagram showing the impurity concentration distribution in the depth direction of the example and the comparative example 1, and shows the boron concentration. As shown in FIG. 7, the example has a very low boron concentration as compared with Comparative Example 1, and satisfies a reference level (0.01 ppm or less) that can be used as a device.
  • FIG. 8 is a diagram showing the results of imaging the surface of Example and Comparative Example 2 using an optical microscope
  • FIG. 9 is a diagram showing the distribution of defects in Example and Comparative Example 2.
  • FIGS. 8A and 9A in Comparative Example 2, triangular defects were observed over the entire SiC substrate W.
  • FIGS. 8B and 9B almost no triangular defects were observed.
  • FTIR Fast Fourier Transform Infrared Spectroscopy
  • FTIR analysis was performed on the gas exhausted from the vacuum pump 12b when Ar gas was introduced into the processing vessel 11 after removal of the reaction product using ClF 3 gas.
  • Ar gas was supplied into the processing container 11 while controlling the flow rate of Ar gas to 7 slm, the pressure in the processing container 11 to 72 kPa, and the temperature of the containing structure 15b to 550 ° C.
  • the SiF 4 gas when an atmosphere, that is, a gas containing moisture is introduced into the processing container 11, the SiF 4 gas rapidly increases immediately after the introduction, and when the pressure in the processing container 11 rises, appear. During the introduction of the atmosphere, the amount of these SiF 4 gas and HF gas gradually decreases. Further, when Ar gas is supplied into the processing container 11 after the introduction of the atmosphere, the SiF 4 gas increases immediately after the start of supply, but the amount of HF gas decreases regardless of whether or not Ar gas is supplied. Further, according to the FTIR analysis for comparison of the latter, when Ar gas, that is, a gas containing no moisture is introduced instead of the atmosphere immediately after cleaning using ClF 3 gas, the SiF 4 gas rapidly increases immediately after the introduction. However, HF gas is not generated even if the pressure in the processing container 11 increases.
  • the above-described hydrogen annealing step may be performed without performing the residual material removal step by introducing atmospheric gas.
  • the present invention is useful for a technique for forming a SiC film by epitaxial growth.

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Abstract

L'invention concerne un procédé de nettoyage d'un dispositif filmogène destiné à introduire un gaz brut dans un récipient de traitement qui comporte une unité de maintien de substrat servant à maintenir un substrat de SiC placé à l'intérieur et dont la pression intérieure est réduite, à chauffer le substrat de SiC, et à former un film sur le substrat de SiC, le procédé comprenant : une étape d'élimination de produit de réaction consistant à éliminer un produit de réaction qui a été produit pendant la formation de film et collé à des parties autres que le substrat de SiC, le produit de réaction étant éliminé par introduction d'un gaz ClF3 dans le récipient de traitement après formation du film ; et une étape d'élimination de résidus consistant à éliminer des substances résiduelles après l'étape d'élimination de produit de réaction, qui pourraient devenir un facteur de défaut ou qui sont des impuretés non nécessaires à la formation du prochain film, les substances étant éliminées par introduction d'air dans le récipient de traitement.
PCT/JP2017/045681 2017-04-18 2017-12-20 Dispositif filmogène et son procédé de nettoyage WO2018193664A1 (fr)

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EP17906757.4A EP3614419B1 (fr) 2017-04-18 2017-12-20 Dispositif filmogène et son procédé de nettoyage
KR1020197033099A KR102270548B1 (ko) 2017-04-18 2017-12-20 성막 장치 및 그 클리닝 방법
JP2019513222A JP6868686B2 (ja) 2017-04-18 2017-12-20 成膜装置及びそのクリーニング方法
US16/604,391 US11390944B2 (en) 2017-04-18 2017-12-20 Film-forming device and method for cleaning same

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113795909A (zh) * 2019-05-08 2021-12-14 纽富来科技股份有限公司 气相生长方法及气相生长装置
EP3919657A4 (fr) * 2019-02-01 2022-10-05 Tokyo Electron Limited Procédé de formation de film et appareil de formation de film
US11795577B2 (en) 2021-08-04 2023-10-24 Resonac Corporation SiC epitaxial wafer and method of manufacturing SiC epitaxial wafer

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113745131B (zh) * 2021-08-31 2024-01-16 顾赢速科技(合肥)有限公司 多层外延工艺及其线性平台设备
CN117802582A (zh) * 2024-03-01 2024-04-02 浙江求是半导体设备有限公司 外延炉清洗方法和N型SiC的制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0348268U (fr) 1989-09-16 1991-05-08
JP2007243014A (ja) * 2006-03-10 2007-09-20 Hitachi Kokusai Electric Inc 半導体装置の製造方法及び基板処理装置
US20130192648A1 (en) * 2012-02-01 2013-08-01 Samsung Electronics Co., Ltd. Substrate treating apparatuses and methods of removing reaction gas using the same
JP2013251487A (ja) * 2012-06-04 2013-12-12 Taiyo Nippon Sanso Corp 炭化珪素除去方法及び炭化珪素成膜装置
JP2015040153A (ja) * 2013-08-22 2015-03-02 大陽日酸株式会社 サセプタ、及びサセプタのクリーニング方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01152274A (ja) 1987-12-09 1989-06-14 Iwatani Internatl Corp 膜形成操作系におけるフッ化塩素クリーニング後の汚染除去方法
JPH0348268A (ja) 1989-07-17 1991-03-01 Mita Ind Co Ltd 画像形成装置のトナー濃度検知装置
JP2783485B2 (ja) * 1992-06-01 1998-08-06 セントラル硝子株式会社 三フッ化塩素ガスの除去方法
JP2003077839A (ja) * 2001-08-30 2003-03-14 Toshiba Corp 半導体製造装置のパージ方法及び半導体装置の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0348268U (fr) 1989-09-16 1991-05-08
JP2007243014A (ja) * 2006-03-10 2007-09-20 Hitachi Kokusai Electric Inc 半導体装置の製造方法及び基板処理装置
US20130192648A1 (en) * 2012-02-01 2013-08-01 Samsung Electronics Co., Ltd. Substrate treating apparatuses and methods of removing reaction gas using the same
JP2013251487A (ja) * 2012-06-04 2013-12-12 Taiyo Nippon Sanso Corp 炭化珪素除去方法及び炭化珪素成膜装置
JP2015040153A (ja) * 2013-08-22 2015-03-02 大陽日酸株式会社 サセプタ、及びサセプタのクリーニング方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP3614419A4

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3919657A4 (fr) * 2019-02-01 2022-10-05 Tokyo Electron Limited Procédé de formation de film et appareil de formation de film
CN113795909A (zh) * 2019-05-08 2021-12-14 纽富来科技股份有限公司 气相生长方法及气相生长装置
EP3968360A4 (fr) * 2019-05-08 2023-06-28 NuFlare Technology, Inc. Dispositif et procédé de croissance en phase vapeur
US11795577B2 (en) 2021-08-04 2023-10-24 Resonac Corporation SiC epitaxial wafer and method of manufacturing SiC epitaxial wafer

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EP3614419B1 (fr) 2024-05-01
JPWO2018193664A1 (ja) 2020-02-20
US11390944B2 (en) 2022-07-19
KR20190137867A (ko) 2019-12-11
US20200157677A1 (en) 2020-05-21
TWI768025B (zh) 2022-06-21
EP3614419A4 (fr) 2020-12-30
KR102270548B1 (ko) 2021-06-28
JP6868686B2 (ja) 2021-05-12
EP3614419A1 (fr) 2020-02-26

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