WO2018192277A1 - 无机封装膜及其制作方法、oled封装膜的制作方法及相应的显示面板和显示装置 - Google Patents

无机封装膜及其制作方法、oled封装膜的制作方法及相应的显示面板和显示装置 Download PDF

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Publication number
WO2018192277A1
WO2018192277A1 PCT/CN2018/071529 CN2018071529W WO2018192277A1 WO 2018192277 A1 WO2018192277 A1 WO 2018192277A1 CN 2018071529 W CN2018071529 W CN 2018071529W WO 2018192277 A1 WO2018192277 A1 WO 2018192277A1
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film
inorganic
inorganic encapsulating
encapsulating film
deposition process
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English (en)
French (fr)
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崔富毅
孙泉钦
陈旭
肖昂
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BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
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BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
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Priority to US16/080,053 priority Critical patent/US20210202897A1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers

Definitions

  • the present disclosure relates to the field of packaging technologies, and in particular, to an inorganic package film and a method for fabricating the same, a method for fabricating the OLED package film, and a corresponding display panel and display device.
  • OLED Organic Light-Emitting Diode
  • OLED devices are particularly sensitive to moisture and oxygen in the air, so OLED devices need to be packaged to ensure device performance and lifetime.
  • thin film packaging technology has been proposed, which on the one hand requires the package structure to have the ability to block water oxygen, and on the other hand requires the package structure to have flexible and bendable characteristics, which makes the traditional rigid package The structure cannot meet the demand, and a new package form represented by a thin film package structure is thus revealed.
  • the thin film encapsulation structures are structures in which an organic film layer and an inorganic film layer are alternately arranged, and the inorganic film layer usually includes an inorganic film layer such as SiN x ⁇ SiO 2 prepared by a chemical vapor deposition process.
  • the existing OLED display panel requires only a low temperature process, and the chemical vapor deposition process only has a high density when forming a film at a high temperature, and is limited by other indexes such as stress, the method is prepared by the method.
  • the density of the inorganic film layer is deviated, and even fine pores may appear, so that the insulating property of the inorganic film layer and the ability to block water oxygen are inferior.
  • An aspect of the present disclosure provides a method of fabricating an inorganic encapsulation film, comprising: forming a first inorganic encapsulation film on a device to be packaged by a chemical vapor deposition process; and using an atomic layer deposition process in the first inorganic package A second inorganic encapsulating film is formed on the film.
  • the second inorganic encapsulating film completely covers the first inorganic encapsulating film.
  • a material forming the first inorganic encapsulation film is different from a material forming the second inorganic encapsulation film.
  • the material of the second inorganic encapsulating film is one or a combination of the following materials: alumina AL 2 O 3 , titanium oxide TiO or silicon dioxide SiO 2 .
  • the temperature of the atomic layer deposition process and the chemical vapor deposition process is from 70 °C to 100 °C.
  • the second inorganic encapsulating film has a thickness of 0.03 micrometers to 0.1 micrometers.
  • the inorganic encapsulating film has a thickness of no greater than 0.5 microns.
  • Another aspect of the present disclosure provides a method of fabricating an OLED package film, comprising: forming an organic package film and an inorganic package film which are alternately disposed, respectively.
  • the inorganic encapsulating film is fabricated by the above method provided by the embodiments of the present disclosure.
  • an inorganic encapsulation film comprising: a first inorganic encapsulation film formed by a chemical vapor deposition process, and a second formed on the first inorganic encapsulation film and formed by an atomic layer deposition process Inorganic encapsulation film.
  • the second inorganic encapsulation film completely covers the first inorganic encapsulation film.
  • the second inorganic encapsulating film has a thickness of 0.03 micrometers to 0.1 micrometers.
  • the inorganic encapsulating film has a thickness of no greater than 0.5 microns.
  • an OLED display panel including: a light emitting device located in a display region, and an encapsulation film disposed on the light emitting device and configured to package the light emitting device.
  • the encapsulation film includes an organic encapsulation film that is alternately disposed and any of the above-described inorganic encapsulation films provided by the embodiments of the present disclosure.
  • a further aspect of the present disclosure further provides a display device including any of the above OLED display panels provided by the embodiments of the present disclosure.
  • the present disclosure separately forms a two-layer inorganic encapsulating film by a chemical vapor deposition process and an atomic layer deposition process. Therefore, compared with the inorganic encapsulation film fabricated by only the chemical vapor deposition process, the atomic layer deposition process has a small film formation unit, and the formed inorganic encapsulation film layer has higher density, so that the inorganic substance prepared by the chemical vapor deposition process can be filled.
  • the fine pore defects appearing in the encapsulating film can further improve the insulating property of the inorganic film layer and the ability to block water oxygen, thereby improving the packaging effect.
  • FIG. 1 is a flow chart of a method for fabricating an inorganic encapsulating film according to an embodiment of the present disclosure
  • FIG. 2 is a cross-sectional view of an inorganic encapsulating film provided by an embodiment of the present disclosure
  • 3a is a cross-sectional view of an OLED package film according to an embodiment of the present disclosure.
  • FIG. 3b is a cross-sectional view of another OLED package film according to an embodiment of the present disclosure.
  • the inorganic encapsulating film is not formed by the chemical vapor deposition process, but the two inorganic encapsulating films are separately formed by the chemical vapor deposition process and the atomic layer deposition process. Due to the small film formation unit of the atomic layer deposition process, the denseness of the film layer is higher, so that the micropore defects occurring in the inorganic encapsulation film prepared by the chemical vapor deposition process can be filled, thereby improving the insulation of the inorganic film layer and blocking water. The ability to oxygen, thereby improving the effectiveness of the package.
  • FIG. 1 is a flow chart showing the steps of a method for fabricating an inorganic encapsulating film according to an embodiment of the present disclosure.
  • the fabrication method includes, in step 101, forming a first inorganic encapsulation film on a device to be packaged by a chemical vapor deposition process.
  • the fabrication method further includes, in step 102, forming a second inorganic encapsulation film on the first inorganic encapsulation film by an atomic layer deposition process.
  • FIG. 2 schematically illustrates a cross-sectional view of an inorganic encapsulation film provided by an embodiment of the present disclosure.
  • the inorganic encapsulation film includes an inorganic encapsulation film 202 formed on a device 201 to be packaged, wherein the inorganic encapsulation film 202 includes a first inorganic encapsulation film 2021 and a second inorganic encapsulation film 2022.
  • the first inorganic encapsulating film 2021 is fabricated by a chemical vapor deposition process.
  • the first inorganic encapsulating film 2021 is formed by a chemical vapor deposition process, the density deviation of the obtained first inorganic encapsulating film 2021 may even appear as fine pores 2023, resulting in insulation of the first inorganic encapsulating film 2021 and blocking water. The ability to oxygen is poor. Therefore, on the first inorganic encapsulation film 2021, the second inorganic encapsulation film 2022 is formed using an atomic layer deposition process. Since the atomization layer deposition process has a small film formation unit, the formed film layer has higher density, so that the fine pores 2023 appearing in the first inorganic encapsulation film 2021 prepared by the chemical vapor deposition process can be filled, thereby improving the inorganic encapsulation film. The insulation of 202 and the ability to block water oxygen, thereby improving the packaging effect.
  • the second inorganic encapsulation film 2022 may completely cover the first inorganic encapsulation film 2021, thereby making the second inorganic encapsulation film 2022 better.
  • the fine hole defects in the first inorganic encapsulating film 2021 are filled, and at the same time, the encapsulation effect is not affected by the formation of the step.
  • the films formed by different inorganic materials Due to the compactness, insulation and ability to block water oxygen, the films formed by different inorganic materials have different requirements for the materials to be produced. Therefore, the first inorganic encapsulating film and the second inorganic encapsulating film in the inorganic encapsulating film can be selected according to actual production requirements. For example, in an exemplary embodiment, the material forming the first inorganic encapsulation film is different from the material forming the second inorganic encapsulation film.
  • the material of the second inorganic encapsulating film may be one or a combination of the following materials: alumina Al 2 O 3 , titanium oxide TiO or silicon dioxide SiO 2 .
  • the material of the first inorganic encapsulating film can be arbitrarily selected from inorganic materials which can be produced by a chemical vapor deposition process and can block water and oxygen, which is not limited herein.
  • the temperature of the atomic layer deposition process and the chemical vapor deposition process is 70 ° C - 100 ° C. Since chemical vapor deposition has a good film compaction at high temperatures, when the film is formed at a low temperature, the denseness of the formed inorganic film layer is deviated, and fine pores are likely to occur, so that the second inorganic encapsulating film is prepared by the atomic layer deposition process.
  • the inorganic encapsulation film may also be fabricated using only an atomic layer deposition process.
  • the deposition rate of the atomic layer deposition process is slow, it is difficult to meet the mass production requirement, and thus the combination process of the above chemical vapor deposition process and the atomic layer deposition process according to the embodiment of the present disclosure is formed on the one hand by a chemical vapor deposition process at a high speed.
  • the advantages of the film, and on the other hand the formation of nano-scale atomic film formation by atomic layer deposition process, filling the film formation defects of low-temperature chemical vapor deposition, thereby obtaining an excellent composite film, thereby achieving the packaging requirements of the flexible package.
  • an embodiment of the present disclosure further provides a method for fabricating an OLED package film, comprising separately forming an organic package film and an inorganic package film which are alternately disposed.
  • the inorganic encapsulating film is produced by using any of the above-described inorganic encapsulating films provided by the embodiments of the present disclosure.
  • the method for fabricating the OLED package film reference may be made to the embodiment of the method for fabricating the above inorganic encapsulation film, and the repeated description is omitted.
  • FIG. 3a schematically illustrates a cross-sectional view of an OLED package film provided by an embodiment of the present disclosure.
  • the OLED package film includes an organic package film 203 and an inorganic package film 202 which are alternately disposed.
  • the OLED package film as shown in FIG. 3a exemplarily includes only two inorganic encapsulation films 202 and an organic encapsulation film 203 disposed between the two inorganic encapsulation films 202
  • the OLED encapsulation film may include Any number of alternately disposed organic encapsulation films 203 and inorganic encapsulation films 202.
  • each layer of the inorganic encapsulation film 202 is fabricated by a combination of the above chemical vapor deposition process + atomic layer deposition process.
  • the combination of the above chemical vapor deposition process + atomic layer deposition process may be applied to only one or more of the inorganic encapsulation films as needed.
  • the method is made, while other inorganic encapsulating films can be fabricated by a chemical vapor deposition process with a faster film formation rate.
  • FIG. 3b schematically illustrates a cross-sectional view of another OLED package film provided by an embodiment of the present disclosure.
  • the outermost inorganic encapsulation film 202 in the OLED encapsulation film is fabricated by a combination of the above chemical vapor deposition process + atomic layer deposition process, and the other inorganic encapsulation film 202 is only subjected to a chemical vapor deposition process. Production.
  • the embodiment of the present disclosure further provides an inorganic encapsulation film, as shown in FIG. 2, comprising: a first inorganic encapsulation film 2021 formed by a chemical vapor deposition process, and disposed on the first inorganic encapsulation film 2021 and using an atomic layer A second inorganic encapsulation film 2022 formed by a deposition process.
  • an inorganic encapsulation film as shown in FIG. 2, comprising: a first inorganic encapsulation film 2021 formed by a chemical vapor deposition process, and disposed on the first inorganic encapsulation film 2021 and using an atomic layer A second inorganic encapsulation film 2022 formed by a deposition process.
  • the inorganic encapsulating film refer to the embodiment of the method for fabricating the above inorganic encapsulating film, and the repeated description is omitted.
  • an embodiment of the present disclosure further provides an OLED display panel, including: a light emitting device disposed in a display area, and an encapsulation film disposed on the light emitting device and configured to package the light emitting device.
  • the encapsulation film includes an organic encapsulation film that is alternately disposed and the above-described inorganic encapsulation film provided by the embodiments of the present disclosure.
  • the thickness of the inorganic encapsulating film can be appropriately reduced.
  • the thickness of the inorganic encapsulating film is not more than 0.5 ⁇ m. Therefore, the thickness of the OLED display panel can be further reduced to meet the needs of the ultra-thin display screen.
  • the thickness of the second inorganic encapsulation film can be made thin in order to meet the demand for mass production, as long as the second inorganic layer is formed.
  • the encapsulating film can meet the requirements of insulation and water and oxygen barrier.
  • the second inorganic encapsulating film has a thickness of 0.03 micrometers to 0.1 micrometers.
  • the embodiment of the present disclosure further provides a display device, including the above OLED display panel provided by the embodiment of the present disclosure.
  • a display device including the above OLED display panel provided by the embodiment of the present disclosure.
  • the display device reference may be made to the embodiment of the above OLED display panel, and the repeated description is omitted.
  • the present disclosure separately forms a two-layer inorganic encapsulating film by a chemical vapor deposition process and an atomic layer deposition process. Therefore, compared with the inorganic encapsulation film fabricated by only the chemical vapor deposition process, the atomic layer deposition process has a small film formation unit, and the formed inorganic encapsulation film layer has higher density, so that the inorganic substance prepared by the chemical vapor deposition process can be filled.
  • the fine pore defects appearing in the encapsulating film can further improve the insulating property of the inorganic film layer and the ability to block water oxygen, thereby improving the packaging effect.

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Abstract

一种无机封装膜（202）及其制作方法、OLED封装膜的制作方法及相应的显示面板和显示装置。所述制作方法包括：采用化学气相沉积工艺，在待封装器件（201）上形成第一无机封装膜（2021）；以及采用原子层沉积工艺，在第一无机封装膜（2021）上形成第二无机封装膜（2022）。

Description

无机封装膜及其制作方法、OLED封装膜的制作方法及相应的显示面板和显示装置
相关申请的交叉引用
本申请要求享有2017年4月18日提交的中国专利申请No.201710253084.3的优先权，其全部公开内容通过引用并入本文。
技术领域
本公开涉及封装技术领域，尤其涉及一种无机封装膜及其制作方法、OLED封装膜的制作方法及相应的显示面板和显示装置。
背景技术
电子器件、尤其是OLED(Organic Light-Emitting Diode，有机发光二极管)器件对空气中的水汽和氧气特别敏感，因此需要对OLED器件进行封装以保证器件的性能和使用寿命。随着柔性OLED显示面板的出现，相应地提出了薄膜封装技术，其一方面要求封装结构具有阻隔水氧的能力，另一方面还要求封装结构具有柔性可弯曲的特性，这使得传统的刚性封装结构无法满足需求，而以薄膜封装结构为代表的新的封装形式由此显现出来。
目前，多数的薄膜封装结构都是有机膜层和无机膜层交替排列的结构，其中无机膜层通常包括采用化学气相沉积工艺制备的SiN x\SiO 2等无机膜层。但是，因为现有的OLED显示面板要求只能进行低温工艺，而化学气相沉积工艺只有在高温成膜时致密性才比较好，再加上应力等其他指标的限制，因此通过该方法制备出的无机膜层致密性偏差，甚至会有细微孔洞出现，使得无机膜层的绝缘性和阻隔水氧的能力较差。
鉴于以上，在本领域中存在对于进一步改进的无机封装膜的需要。
发明内容
本公开的目的是提供一种改进的无机封装膜、OLED封装膜的制作方法及相应装置，其能够至少部分地缓解或消除以上提到的问题中的一个或多个。
本公开的一方面提供了一种无机封装膜的制作方法，包括：采用化学气相沉积工艺，在待封装器件上形成第一无机封装膜；以及采用原子层沉积工艺，在所述第一无机封装膜上形成第二无机封装膜。
根据一些实施例，所述第二无机封装膜完全覆盖第一无机封装膜。
根据一些实施例，形成所述第一无机封装膜的材料和形成所述第二无机封装膜的材料不同。
根据一些实施例，所述第二无机封装膜的材料为下列材料之一或组合：氧化铝AL 2O 3、氧化钛TiO或二氧化硅SiO 2。
根据一些实施例，所述原子层沉积工艺和所述化学气相沉积工艺的温度为70℃-100℃。
根据一些实施例，所述第二无机封装膜的厚度为0.03微米-0.1微米。
根据一些实施例，所述无机封装膜的厚度不大于0.5微米。
本公开的另一方面提供了一种OLED封装膜的制作方法，包括：分别形成交替设置的有机封装膜和无机封装膜。所述无机封装膜采用本公开实施例提供的上述方法制作。
本公开的另一方面提供了一种无机封装膜，包括：采用化学气相沉积工艺形成的第一无机封装膜，以及位于所述第一无机封装膜上、且采用原子层沉积工艺形成的第二无机封装膜。
根据一些实施例，所述第二无机封装膜完全覆盖所述第一无机封装膜。
根据一些实施例，所述第二无机封装膜的厚度为0.03微米-0.1微米。
根据一些实施例，所述无机封装膜的厚度不大于0.5微米。
本公开的另一方面提供了一种OLED显示面板，包括：位于显示区域的发光器件，以及位于所述发光器件上、且配置成封装所述发光器件的封装膜。所述封装膜包括交替设置的有机封装膜和本公开实施例提供的上述任一种无机封装膜。
本公开另外的方面还提供了一种显示装置，包括本公开实施例提供的上述任一种OLED显示面板。
本公开在制作无机封装膜时，采用化学气相沉积工艺和原子层沉积工艺分别制作两层无机封装膜。因此，相比于仅采用化学气相沉积 工艺制作的无机封装膜，原子层沉积工艺成膜单位微小，所形成的无机封装膜层的致密性更高，因而可以填补采用化学气相沉积工艺制备的无机封装膜中出现的细微孔洞缺陷，进而可以提高无机膜层的绝缘性和阻隔水氧的能力，改善封装的效果。
附图说明
图1为本公开实施例提供的无机封装膜的制作方法的流程图；
图2为本公开实施例提供的无机封装膜的截面视图；
图3a为本公开实施例提供的一种OLED封装膜的截面视图；
图3b为本公开实施例提供的另一种OLED封装膜的截面视图。
具体实施方式
下面将结合本公开实施例中的附图，对本公开实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本公开一部分实施例，并不是全部的实施例。基于本公开中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本公开保护的范围。
附图中各个膜层的厚度和形状不反映其真实比例，目的只是示意说明本公开的内容。
在本公开实施例提供的无机封装膜的制作方法中，不再仅采用化学气相沉积工艺制作无机封装膜，而是采用化学气相沉积工艺和原子层沉积工艺分别制作两层无机封装膜。由于原子层沉积工艺成膜单位微小，膜层的致密性更高，因而可以填补采用化学气相沉积工艺制备的无机封装膜中出现的细微孔洞缺陷，进而可以提高无机膜层的绝缘性和阻隔水氧的能力，从而改善封装的效果。
下面对本公开实施例提供的无机封装膜的制作方法进行详细的说明。
图1为本公开实施例提供的无机封装膜的制作方法的步骤流程图。
如图1所示，所述制作方法包括在步骤101中，采用化学气相沉积工艺，在待封装器件上形成第一无机封装膜。
所述制作方法还包括在步骤102中，采用原子层沉积工艺，在第一无机封装膜上形成第二无机封装膜。
图2示意性地图示了本公开实施例提供的无机封装膜的截面视图。如图2所示，无机封装膜包括形成在待封装器件201上的无机封装膜202，其中该无机封装膜202包括第一无机封装膜2021和第二无机封装膜2022。第一无机封装膜2021采用化学气相沉积工艺制作。
由于第一无机封装膜2021采用化学气相沉积工艺制作，因此所得到的第一无机封装膜2021的致密性偏差，甚至会有细微孔洞2023出现，导致第一无机封装膜2021的绝缘性和阻隔水氧的能力较差。因此，在第一无机封装膜2021上，采用原子层沉积工艺形成第二无机封装膜2022。由于原子层沉积工艺成膜单位微小，所形成的膜层的致密性更高，因而可以填补采用化学气相沉积工艺制备的第一无机封装膜2021中出现的细微孔洞2023，进而可以提高无机封装膜202的绝缘性和阻隔水氧的能力，从而改善封装的效果。
可选地，为了使无机封装膜202的封装效果更佳，在示例实施例中，可以使第二无机封装膜2022完全覆盖第一无机封装膜2021，从而使第二无机封装膜2022能够更好的填补第一无机封装膜2021中的细微孔洞缺陷，同时，也不会因为形成段差而影响封装效果。
由于不同无机材料所形成的膜的致密性、绝缘性以及阻隔水氧的能力不同，而且不同的制作工艺对制作材料的要求也不相同。因此，上述无机封装膜中的第一无机封装膜和第二无机封装膜可以根据实际制作要求选取制作材料。例如，在示例实施例中，形成第一无机封装膜的材料和形成第二无机封装膜的材料不同。
考虑到原子层沉积工艺的要求，特别地，第二无机封装膜的材料可以为下列材料之一或组合：氧化铝Al 2O 3、氧化钛TiO或二氧化硅SiO 2。第一无机封装膜的材料则可以任意选取可以通过化学气相沉积工艺制作、且能够阻隔水氧的无机材料，在此不做限定。
在具体实施时，由于OLED器件要求只能进行低温工艺，因此，在示例实施例中，原子层沉积工艺和化学气相沉积工艺的温度为70℃-100℃。由于化学气相沉积在高温下成膜致密性比较好，而在低温成膜时，所形成的无机膜层致密性偏差，容易有细微孔洞出现，因而配合原子层沉积工艺制作的第二无机封装膜，可以填补采用化学气相沉积工艺制备的无机封装膜中出现的细微孔洞缺陷，进而可以提高整个无机封装膜的绝缘性和阻隔水氧的能力，从而改善无机封装膜的封装效 果。
实际上，在示例实施例中，也可以仅采用原子层沉积工艺来制作无机封装膜。但是，由于原子层沉积工艺成膜速率较慢，很难满足量产需求，因而根据本公开的实施例的上述化学气相沉积工艺与原子层沉积工艺的组合工艺一方面利用化学气相沉积工艺高速成膜的优点，并且另一方面利用原子层沉积工艺形成纳米级原子成膜，填补低温化学气相沉积的成膜缺陷，从而得到优良的复合膜，进而达到柔性封装的封装要求。
相应地，本公开实施例还提供了一种OLED封装膜的制作方法，包括分别形成交替设置的有机封装膜和无机封装膜。无机封装膜采用本公开实施例提供的上述任一种无机封装膜的制作方法制作。该OLED封装膜的制作方法的实施，可以参见上述无机封装膜的制作方法的实施例，重复之处不再赘述。
图3a示意性地图示了本公开实施例提供的一种OLED封装膜的截面视图。如图3a所示，OLED封装膜包括交替设置的有机封装膜203和无机封装膜202。需要指出的是，尽管如图3a所示的OLED封装膜仅示例性地包括两层无机封装膜202和设置在两层无机封装膜202之间的有机封装膜203，但是该OLED封装膜可以包括任何数目的交替设置的有机封装膜203和无机封装膜202。在这样的OLED封装膜中，各层无机封装膜202均采用上述化学气相沉积工艺+原子层沉积工艺的组合方式制作。
替换地，当OLED封装膜包括多层无机封装膜时，为了提高成膜速率，可以根据需要而只对其中的一层或多层无机封装膜采用上述化学气相沉积工艺+原子层沉积工艺的组合方式制作，而其它的无机封装膜则可以仅采用成膜速率较快的化学气相沉积工艺制作。
图3b示意性地图示了本公开实施例提供的另一种OLED封装膜的截面视图。如图3b所示，该OLED封装膜中最外侧的一层无机封装膜202采用上述化学气相沉积工艺+原子层沉积工艺的组合方式制作，而其它的无机封装膜202则仅采用化学气相沉积工艺制作。
本公开实施例还提供了一种无机封装膜，如图2所示，包括：采用化学气相沉积工艺形成的第一无机封装膜2021，以及设置在第一无机封装膜2021上、且采用原子层沉积工艺形成的第二无机封装膜2022。 该无机封装膜的实施可以参见上述无机封装膜的制作方法的实施例，重复之处不再赘述。
进一步地，本公开实施例还提供了一种OLED显示面板，包括：设置在显示区域的发光器件，以及设置在发光器件上、配置成封装发光器件的封装膜。封装膜包括交替设置的有机封装膜和本公开实施例提供的上述无机封装膜。该OLED显示面板的实施可以参见上述无机封装膜的实施例，重复之处不再赘述。
在仅采用化学气相沉积工艺制备无机封装膜的常规技术中，为了使无机封装膜的绝缘性和阻隔水氧的能力达到一定要求，通常使其达到一定的厚度，一般至少0.8微米左右。相比之下，在本公开的实施例中，由于采用原子层沉积工艺制作的第二无机封装膜的致密性较好，因此可以适当降低无机封装膜的厚度。例如，无机封装膜的厚度不大于0.5微米。因此，可以进一步降低OLED显示面板的厚度，适应现在超薄显示屏的需求。
在示例实施例中，考虑到原子层沉积工艺在低温环境下成膜速率较慢，因而为了满足量产的需求，第二无机封装膜的厚度可以制作得很薄，只要所形成的第二无机封装膜能满足绝缘性和阻隔水氧的要求即可。例如，在一些示例实施例中，第二无机封装膜的厚度为0.03微米-0.1微米。
本公开实施例还提供了一种显示装置，包括本公开实施例提供的上述OLED显示面板。该显示装置的实施可以参见上述OLED显示面板的实施例，重复之处不再赘述。
综上所述，本公开在制作无机封装膜时，采用化学气相沉积工艺和原子层沉积工艺分别制作两层无机封装膜。因此，相比于仅采用化学气相沉积工艺制作的无机封装膜，原子层沉积工艺成膜单位微小，所形成的无机封装膜层的致密性更高，因而可以填补采用化学气相沉积工艺制备的无机封装膜中出现的细微孔洞缺陷，进而可以提高无机膜层的绝缘性和阻隔水氧的能力，改善封装的效果。
显然，本领域的技术人员可以对本公开进行各种改动和变型而不脱离本公开的精神和范围。这样，倘若本公开的这些修改和变型属于本公开权利要求及其等同技术的范围之内，则本公开也意图包含这些改动和变型在内。

Claims (14)

  1. 一种无机封装膜的制作方法，包括：
    采用化学气相沉积工艺，在待封装器件上形成第一无机封装膜；
    采用原子层沉积工艺，在所述第一无机封装膜上形成第二无机封装膜。
  2. 如权利要求1所述的方法，其中，所述第二无机封装膜完全覆盖第一无机封装膜。
  3. 如权利要求1或2所述的方法，其中，形成所述第一无机封装膜的材料和形成所述第二无机封装膜的材料不同。
  4. 如权利要求3所述的方法，其中，所述第二无机封装膜的材料为下列材料之一或组合：
    氧化铝Al 2O 3、氧化钛TiO或二氧化硅SiO 2。
  5. 如权利要求1所述的方法，其中，所述化学气相沉积工艺和所述原子层沉积工艺的温度为70℃-100℃。
  6. 如权利要求1所述的方法，其中，所述第二无机封装膜的厚度为0.03微米-0.1微米。
  7. 如权利要求1所述的方法，其中，所述无机封装膜的厚度不大于0.5微米。
  8. 一种OLED封装膜的制作方法，包括：
    分别形成交替设置的有机封装膜和无机封装膜，
    其中，所述无机封装膜采用如权利要求1-7任一项所述的方法制作。
  9. 一种无机封装膜，包括：
    采用化学气相沉积工艺形成的第一无机封装膜；以及
    位于所述第一无机封装膜上、且采用原子层沉积工艺形成的第二无机封装膜。
  10. 如权利要求9所述的无机封装膜，其中，所述第二无机封装膜完全覆盖所述第一无机封装膜。
  11. 如权利要求9所述的无机封装膜，其中，所述第二无机封装膜的厚度为0.03微米-0.1微米。
  12. 如权利要求9-11任一项所述的无机封装膜，其中，所述无机封装膜的厚度不大于0.5微米。
  13. 一种OLED显示面板，包括：
    位于显示区域的发光器件；以及
    位于所述发光器件上、且配置成封装所述发光器件的封装膜，
    其中，所述封装膜包括交替设置的有机封装膜和如权利要求9或12所述的无机封装膜。
  14. 一种显示装置，包括如权利要求13所述的OLED显示面板。
PCT/CN2018/071529 2017-04-18 2018-01-05 无机封装膜及其制作方法、oled封装膜的制作方法及相应的显示面板和显示装置 Ceased WO2018192277A1 (zh)

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