WO2018190089A1 - 洗浄水供給装置 - Google Patents
洗浄水供給装置 Download PDFInfo
- Publication number
- WO2018190089A1 WO2018190089A1 PCT/JP2018/011100 JP2018011100W WO2018190089A1 WO 2018190089 A1 WO2018190089 A1 WO 2018190089A1 JP 2018011100 W JP2018011100 W JP 2018011100W WO 2018190089 A1 WO2018190089 A1 WO 2018190089A1
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- WO
- WIPO (PCT)
- Prior art keywords
- water
- cleaning water
- cleaning
- washing
- ultrapure
- Prior art date
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 title claims abstract description 101
- 238000004140 cleaning Methods 0.000 title claims abstract description 63
- 229910021642 ultra pure water Inorganic materials 0.000 claims abstract description 43
- 239000012498 ultrapure water Substances 0.000 claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 claims abstract description 27
- 238000005406 washing Methods 0.000 claims description 40
- 239000003002 pH adjusting agent Substances 0.000 claims description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 7
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- 238000005342 ion exchange Methods 0.000 claims description 4
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 claims description 3
- 239000003456 ion exchange resin Substances 0.000 claims description 3
- 229920003303 ion-exchange polymer Polymers 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 230000008929 regeneration Effects 0.000 claims 1
- 238000011069 regeneration method Methods 0.000 claims 1
- 238000011084 recovery Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 25
- 239000000126 substance Substances 0.000 description 24
- 239000000243 solution Substances 0.000 description 12
- 238000002347 injection Methods 0.000 description 11
- 239000007924 injection Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- 239000012528 membrane Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 239000007788 liquid Substances 0.000 description 8
- 239000003814 drug Substances 0.000 description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 6
- 229940079593 drug Drugs 0.000 description 6
- 238000004090 dissolution Methods 0.000 description 5
- 239000007800 oxidant agent Substances 0.000 description 5
- 239000003513 alkali Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 239000003638 chemical reducing agent Substances 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 230000033116 oxidation-reduction process Effects 0.000 description 2
- 230000001172 regenerating effect Effects 0.000 description 2
- 239000008237 rinsing water Substances 0.000 description 2
- 230000009897 systematic effect Effects 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- ATRRKUHOCOJYRX-UHFFFAOYSA-N Ammonium bicarbonate Chemical compound [NH4+].OC([O-])=O ATRRKUHOCOJYRX-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000003113 alkalizing effect Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000001099 ammonium carbonate Substances 0.000 description 1
- 235000012501 ammonium carbonate Nutrition 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000008155 medical solution Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005949 ozonolysis reaction Methods 0.000 description 1
- 230000001603 reducing effect Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F9/00—Multistage treatment of water, waste water or sewage
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/68—Treatment of water, waste water, or sewage by addition of specified substances, e.g. trace elements, for ameliorating potable water
- C02F1/685—Devices for dosing the additives
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/46—Treatment of water, waste water, or sewage by electrochemical methods
- C02F1/469—Treatment of water, waste water, or sewage by electrochemical methods by electrochemical separation, e.g. by electro-osmosis, electrodialysis, electrophoresis
- C02F1/4693—Treatment of water, waste water, or sewage by electrochemical methods by electrochemical separation, e.g. by electro-osmosis, electrodialysis, electrophoresis electrodialysis
- C02F1/4695—Treatment of water, waste water, or sewage by electrochemical methods by electrochemical separation, e.g. by electro-osmosis, electrodialysis, electrophoresis electrodialysis electrodeionisation
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/50—Treatment of water, waste water, or sewage by addition or application of a germicide or by oligodynamic treatment
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/58—Treatment of water, waste water, or sewage by removing specified dissolved compounds
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/70—Treatment of water, waste water, or sewage by reduction
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/72—Treatment of water, waste water, or sewage by oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/20—Treatment of water, waste water, or sewage by degassing, i.e. liberation of dissolved gases
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/42—Treatment of water, waste water, or sewage by ion-exchange
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/66—Treatment of water, waste water, or sewage by neutralisation; pH adjustment
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/72—Treatment of water, waste water, or sewage by oxidation
- C02F1/722—Oxidation by peroxides
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F2103/00—Nature of the water, waste water, sewage or sludge to be treated
- C02F2103/02—Non-contaminated water, e.g. for industrial water supply
- C02F2103/04—Non-contaminated water, e.g. for industrial water supply for obtaining ultra-pure water
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F2103/00—Nature of the water, waste water, sewage or sludge to be treated
- C02F2103/34—Nature of the water, waste water, sewage or sludge to be treated from industrial activities not provided for in groups C02F2103/12 - C02F2103/32
- C02F2103/346—Nature of the water, waste water, sewage or sludge to be treated from industrial activities not provided for in groups C02F2103/12 - C02F2103/32 from semiconductor processing, e.g. waste water from polishing of wafers
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F2209/00—Controlling or monitoring parameters in water treatment
- C02F2209/04—Oxidation reduction potential [ORP]
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F2209/00—Controlling or monitoring parameters in water treatment
- C02F2209/06—Controlling or monitoring parameters in water treatment pH
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F2303/00—Specific treatment goals
- C02F2303/18—Removal of treatment agents after treatment
Definitions
- the present invention relates to an apparatus for producing and supplying cleaning water such as a semiconductor wafer by adding a pH adjusting agent, a redox potential adjusting agent, etc. to ultrapure water, and in particular, a pH adjusting agent, a redox potential.
- the present invention relates to an apparatus suitable for manufacturing and supplying wafer cleaning water containing a solute such as a regulator at a very low concentration.
- an acid or alkali pH adjuster, or an oxidation-reduction potential adjuster such as an oxidizing agent or a reducing agent is used for the purpose of suppressing wafer charging, metal corrosion / dissolution, and particulate adhesion.
- water quality adjustment water dissolved in ultrapure water at a minimum necessary concentration is used as washing water (including rinse water) (for example, Patent Document 1).
- a method for producing the washing water there is a method of dissolving a reducing, oxidizing, acidic or alkaline gas such as H 2 , O 3 , CO 2 or NH 3 in ultrapure water, but the operation is simple.
- a method of injecting a chemical solution in which a pH adjusting agent and / or a redox potential adjusting agent is dissolved in water is often employed.
- a method for injecting a chemical solution there are a method using a pump and a method using pressurization with an airtight container and an inert gas such as N 2 , both of which have been put into practical use.
- the present invention provides a cleaning water supply device capable of stably supplying cleaning water containing a very low concentration of solute such as alkali and oxidizing agent, which is suitable for supplying to a cleaning / rinsing process of a semiconductor wafer or the like. For the purpose.
- the cleaning water supply apparatus of the present invention is a cleaning device for producing cleaning water having a constant concentration by adding a pH adjusting agent and / or a redox potential adjusting agent to ultra pure water from the ultra pure water line and ultra pure water from the ultra pure water line.
- a cleaning water supply apparatus having a water manufacturing unit includes a cleaning water line that is supplied from the cleaning water manufacturing unit to a cleaning machine, and a removal unit that removes solute from excess cleaning water from the cleaning water line. .
- the cleaning water production unit includes means for quantitatively supplying ultrapure water to the ultrapure water line and means for quantitatively supplying a solute to the ultrapure water.
- a plurality of washing machines are connected to the washing water line, and the washing water production unit can produce a larger quantity of washing water than the total of the maximum usage of all washing machines.
- the removing unit includes an ion exchange resin, an electric regenerative ion exchange device, or a platinum nanocolloid support resin.
- washing water having a constant concentration with high accuracy is produced by quantitatively adding a solute to ultrapure water flowing at a constant flow rate in the washing water production section.
- This constant concentration of cleaning water is supplied to the wafer cleaning machine, and excess cleaning water is removed by the solute removal unit, and ultrapure water is recovered. Since the solute and concentration in the excess wash water are known and the types of solute components are small, the solute can be easily and sufficiently removed from the excess wash water.
- the present invention in a multi-chamber single wafer cleaning machine in which a large number of valves are opened and closed irregularly, it is possible to realize a supply that keeps a very important liquid quality accurately and stably at a desired value in a cleaning and rinsing process, and surplus Eliminates waste water and prevents waste of ultrapure water.
- FIG. 1 is a system diagram showing an example of an embodiment of a cleaning water supply apparatus of the present invention.
- This washing water supply device is for adding a pH adjusting agent and / or a redox potential adjusting agent to ultrapure water to produce water quality adjusting water and supplying it to the washing machine.
- the production unit 2 for adding a solute to the ultrapure water line to produce washing water
- the washing water line 3 for flowing washing water
- the washing water line 3 for flowing washing water
- the 1st to n-th n cleaning machines 5A, 5B,..., 5N to which cleaning water is supplied, the solute removing unit 4 into which excess cleaning water is introduced from the cleaning water line 3, and the solute are removed.
- a recovery line 6 for returning the recovered water to a tank or the like.
- Washing water is supplied to the washing machines 5A, 5B to 5N from the washing water line 3 through the branch pipe 7, the valve 8, the pump 9, and the pipe 10, respectively.
- a filter may be provided in the pipe 10.
- a return pipe 11 is branched from the pipe 10, and the end side of the return pipe 11 is connected to the washing water line 3.
- a valve 12 is provided in the return pipe 11.
- ultrapure water is flowing at a constant flow rate by a quantitative supply device including a metering pump, a constant flow valve, a flow control device and the like.
- the solute is added to the ultrapure water at a constant supply amount, so that the cleaning water having a target concentration with high accuracy is supplied to the cleaning machines 5A to 5N via the cleaning water line 3. Is done.
- FIGS. 1 An example of the configuration of the washing water production unit 2 is shown in FIGS.
- the cleaning water production unit is composed of a chemical liquid tank 15, a chemical injection pump 16, and a chemical injection pipe 17.
- a chemical solution in which one or more types such as a pH adjusting agent and an oxidation-reduction potential adjusting agent are dissolved at a predetermined concentration is accommodated.
- the medicine pump 16 a metering pump or a pump with a flow rate control device is used.
- Two or more chemical injection units each including the chemical liquid tank 15, the chemical injection pump 16, and the chemical injection pipe 17 may be installed.
- the cleaning water production unit includes a degassing device 20 for removing a gas component such as oxygen and a membrane gas dissolving device 21.
- the deaeration device 20 is a membrane type deaeration device having a membrane 20a, and is configured to decompress the gas phase chamber separated by the membrane 20a by a decompression means such as a vacuum pump 22.
- the deaerator may be other than the membrane deaerator.
- the gas dissolving device 21 is a membrane dissolving device.
- a gas to be dissolved in ultrapure water is quantitatively supplied through a pipe 23 into a gas phase chamber separated by the gas permeable membrane 21a.
- the gas supplied from the pipe 23 to the gas dissolving device 21 contains one or more kinds of dissolving target component gases.
- the gas supplied to the gas dissolving device 21 may be composed of only one or two or more target component gases, or may be a mixed gas having a quantitative ratio of the target component gas and the inert gas. .
- a direct gas-liquid contact type gas dissolving device such as an ejector other than the membrane type gas dissolving device may be used.
- the cleaning water production unit in FIG. 5 is the one in which the hydrogen peroxide removing device 25 is provided in the ultrapure water line 1 in FIG. 2, and the other configurations are the same as those in FIG.
- the hydrogen peroxide removing device 25 By installing the hydrogen peroxide removing device 25, the amount of the oxidizing agent in the cleaning water can be controlled with high accuracy.
- the chemical solution in the chemical solution tank 15 is injected into the ultrapure water line 1 by the chemical injection pump 16, but inactive such as nitrogen gas in the chemical solution tank 15 as shown in FIG. 6.
- FIG. 6 relates to FIG. 2, FIGS. 4 and 5 can be similarly configured.
- the amount of cleaning water supplied from the production unit 2 to the cleaning water line 3 is larger than the total amount of the maximum amount of cleaning water supplied to each of the cleaning machines 5A to 5N, preferably 120% or more of the total amount. .
- the drug solution to be poured into ultrapure water is a drug solution prepared by dissolving a pH adjuster and / or a redox potential adjuster in ultrapure water.
- the pH adjuster include hydrochloric acid, acetic acid, Nitric acid, phosphoric acid, sulfuric acid, hydrofluoric acid, ammonia, sodium hydroxide, potassium hydroxide, tetramethylammonium hydroxide, ammonium carbonate, or the like can be used.
- hydrogen peroxide or nitric acid can be used as the redox potential regulator.
- the drug solution used in the present invention usually contains these drugs at a concentration of about 20 to 48% by weight.
- the drug solution is usually poured into ultrapure water, and the drug concentration is usually 0.1 to 100 mg. Wash water of about / L is produced.
- Examples of the gas dissolved in ultrapure water include H 2 , O 3 , CO 2 , and NH 3 . These concentrations are also usually diluted on the order of ppm, for example, 50 ppm or less, particularly 20 ppm or less.
- the conventional chemical injection mechanism or gas dissolution mechanism can be applied as it is for the dissolution of the acid, alkali, oxidizing agent, reducing agent, etc. in the production unit 2.
- it is pumped by an inert gas such as a pump or N 2
- gas dissolution it is dissolved by a gas-liquid contact operation by a gas permeable membrane module or an ejector so that a desired solute concentration is obtained.
- the treatment of surplus water in the removal unit 4 can be handled only with an ion exchange resin or a platinum group catalyst. That is, ppm order acid / alkali can be easily removed by an ion exchange device. An electric regenerative ion exchanger (so-called EDI) can also be applied. A catalyst such as a platinum nanocolloid-supported resin is effective for removing the oxidizing agent / reducing agent. When there is surplus water containing a large amount of ozone, it is desirable to add a catalyst suitable for ozonolysis.
- the solute concentration in the excess wash water from the wash water line 3 is very low, on the order of ppm, and since the types of solutes are limited, it is easy to remove the solute sufficiently, and a simple ion exchange device It returns to the purity close to ultrapure water by the combination of catalytic devices. Therefore, the recovered water from which the solute has been removed by the removing unit 4 can be led to a return pipe or an ultrapure water tank of excess ultrapure water, and can be reused without waste.
- the above embodiment is an example of the present invention, and the present invention may be other than the above.
- a plurality (N) of washer 5A to 5N are installed, but only one washer may be installed as shown in FIG.
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Abstract
洗浄水供給装置は、超純水が定量にて流れる超純水ライン1と、該超純水ラインに溶質を定量添加して洗浄水を製造する製造部2と、洗浄水を流すための洗浄水ライン3と、該洗浄水ライン3から洗浄水が供給される洗浄機5A~5Nと、余剰の洗浄水が洗浄水ライン3から導入される溶質除去部4と、溶質が除去された回収水をタンク等へ戻すための回収ライン6を有する。
Description
本発明は、超純水にpH調整剤、酸化還元電位調整剤などを添加して、半導体ウェハ等の洗浄水を製造し、供給する装置に関するものであって、特にpH調整剤、酸化還元電位調整剤等の溶質をごく低濃度にて含むウェハ洗浄水を製造し供給するのに好適な装置に関する。
半導体ウェハの洗浄・リンス水工程では、ウェハの帯電、金属腐食・溶解、微粒子付着を抑制する目的で、酸又はアルカリのpH調整剤や、酸化剤又は還元剤のような酸化還元電位調整剤を、必要最低限のごく低濃度で超純水に溶解させた水質調整水が洗浄水(リンス水を含む)として使用される場合がある(例えば特許文献1)。この洗浄水の製造方法としては、H2、O3、CO2、NH3といった還元性、酸化性、酸性、又はアルカリ性のガスを超純水に溶解させる方法もあるが、操作が簡便であることから、pH調整剤及び/又は酸化還元電位調整剤を水に溶解させた薬液を薬注する方法が採用される場合が多い。薬液の薬注方法としては、ポンプを用いる方法、密閉容器とN2などの不活性ガスによる加圧を用いる方法があり、いずれも実用化されている。
超純水の流量が一定であれば、所望の濃度となるように溶質を添加することは容易であるが、実際に希薄洗浄水が用いられる洗浄機においては、ウェハに注がれる水の供給・停止が複数のバルブの開閉で制御されており、流量が不規則に変動する。
超純水流動が変動しても、希薄洗浄水の溶質濃度が所望範囲に収まるように、超純水流量に対する比例制御、濃度モニターの信号を受けてのPID制御など、様々な手法による溶質添加制御が行われている。しかし、特に複数の洗浄チャンバーを有する枚葉式洗浄機においては、不規則な流量変動に十分追随できる溶質添加制御は実現できておらず、結果としてウェハに注がれる洗浄水・リンス水の液質が目的値から大きく乖離することがあった。
液質安定化を優先し、希薄洗浄水を一定の条件で製造し供給し続ける単純な方法もあるが、この場合、余剰水をそのまま流出させることになる。最近の多チャンバー枚葉洗浄機では、瞬間的に必要になる最大流量と最低流量の差が大きく、最大流量以上の洗浄水を連続供給すると、相当量の余剰水を排出することになり、用排水設備への負担、薬液の過剰使用・排出という面で問題となる。
本発明は、半導体用ウェハ等の洗浄・リンス工程に供給するのに好適な、アルカリ・酸化剤等のごく低濃度の溶質を含む洗浄水を安定供給することができる洗浄水供給装置を提供することを目的とする。
本発明の洗浄水供給装置は、超純水ラインと、該超純水ラインからの超純水にpH調整剤及び/又は酸化還元電位調整剤を添加して一定濃度の洗浄水を製造する洗浄水製造部を有する洗浄水供給装置において、洗浄水製造部から洗浄機に供給する洗浄水ラインと、該洗浄水ラインからの余剰洗浄水から溶質を除去する除去部とを備えることを特徴とする。
本発明の一態様では、前記洗浄水製造部は、前記超純水ラインに超純水を定量供給する手段と、超純水に対し溶質を定量供給する手段とを有する。
本発明の一態様では、前記洗浄水ラインに複数の洗浄機が接続されており、前記洗浄水製造部は、すべての洗浄機の最大使用量の合計よりも多量の洗浄水を製造可能である。
本発明の一態様では、前記除去部は、イオン交換樹脂、電気再生式イオン交換装置、又は白金ナノコロイド担持樹脂を備える。
本発明では、洗浄水製造部で、一定流量にて流れる超純水に対し溶質を定量添加することにより、高精度にて一定濃度となった洗浄水が製造される。この一定濃度の洗浄水がウェハ洗浄機に供給され、余剰の洗浄水は溶質除去部にて除去され、超純水が回収される。余剰の洗浄水中の溶質及び濃度は既知であり、かつ溶質成分の種類も少ないから、余剰洗浄水から溶質を容易に且つ十分に除去することができる。
本発明によると、多数のバルブが不規則に開閉する多チャンバー枚葉式洗浄機において、洗浄・リンス工程で極めて重要な液質を所望の値に精度良く安定に保つ供給が実現でき、かつ余剰水の排出をなくし超純水の無駄遣いを防止できる。
以下に図面を参照して本発明を詳細に説明する。
図1は本発明の洗浄水供給装置の実施の形態の一例を示す系統図である。
この洗浄水供給装置は、超純水にpH調整剤及び/又は酸化還元電位調整剤等を添加して水質調整水を製造し、洗浄機に供給するためのものであり、超純水が定量にて流れる超純水ライン1と、該超純水ラインに溶質を定量添加して洗浄水を製造する製造部2と、洗浄水を流すための洗浄水ライン3と、該洗浄水ライン3から洗浄水が供給される第1ないし第nのn個の洗浄機5A,5B,………5Nと、余剰の洗浄水が洗浄水ライン3から導入される溶質除去部4と、溶質が除去された回収水をタンク等へ戻すための回収ライン6等を有する。
洗浄機5A,5Bないし5Nへは、それぞれ、洗浄水ライン3から分岐配管7、バルブ8、ポンプ9、配管10を介して洗浄水が供給される。配管10にフィルターが設けられてもよい。配管10からはリターン配管11が分岐しており、該リターン配管11の末端側は洗浄水ライン3に接続されている。リターン配管11にバルブ12が設けられている。
超純水ライン1には、定量ポンプ、定流量弁、流量制御装置等を備えた定量供給装置によって超純水が一定流量にて流れている。製造部2では溶質が一定供給量にて超純水に添加され、これにより、高精度にて目的濃度となった洗浄水が洗浄水ライン3を介して各洗浄機5A~5Nに向けて供給される。
洗浄水製造部2の構成の一例を図2~6に示す。
図2では、洗浄水製造部は、薬液タンク15と、薬注ポンプ16と、薬注配管17とで構成されている。薬液タンク15内には、pH調整剤、酸化還元電位調整剤等の1種以上が所定濃度にて溶解した薬液が収容されている。薬注ポンプ16としては定量ポンプ又は流量制御装置付きポンプが用いられる。薬液タンク15と、薬注ポンプ16と、薬注配管17とからなる薬注ユニットが2以上設置されてもよい。
図3では、洗浄水製造部は、酸素等のガス成分を除去するための脱気装置20と、膜式ガス溶解装置21とを備えている。脱気装置20は、この実施の形態では、膜20aを有した膜式脱気装置であり、膜20aで隔てられた気相室内を真空ポンプ22等の減圧手段によって減圧するよう構成されている。ただし、脱気装置は膜脱気装置以外であってもよい。
ガス溶解装置21は、この実施の形態では膜式溶解装置である。ガス透過膜21aで隔てられた気相室内に、超純水中に溶解させるためのガスが配管23を介して定量供給される。
この配管23からガス溶解装置21に供給されるガスは1又は2種以上の溶解目的成分ガスを含む。ガス溶解装置21に供給されるガスは、1種又は2種以上の目的成分ガスのみからなるものであってもよく、目的成分ガスと不活性ガスとの定量比の混合ガスであってもよい。
なお、膜式ガス溶解装置以外の、エジェクター等の直接気液接触式ガス溶解装置を用いてもよい。
図4の洗浄水製造部は、図2の薬液タンク15、薬注ポンプ16、薬注配管17と、図3の脱気装置20及びガス溶解装置12との双方を備えている。
図5の洗浄水製造部は、図2において、超純水ライン1に過酸化水素除去装置25を設けたものであり、その他の構成は図2と同一である。過酸化水素除去装置25を設置することにより、洗浄水中の酸化剤の量を精度よく制御することができる。
図2,4,5では、薬液タンク15内の薬液を薬注ポンプ16によって超純水ライン1に薬注するようにしているが、図6のように薬液タンク15に窒素ガス等の不活性ガスを定量供給して薬液を超純水ライン1に定量添加するよう構成してもよい。図6は図2に関連するものであるが、図4,5も同様に構成することができる。
製造部2から洗浄水ライン3へ供給される洗浄水量は、各洗浄機5A~5Nに供給される洗浄水量の最大量の合計量よりも多く、好ましくは該合計量の120%以上とされる。
本発明において、超純水に薬注する薬液は、pH調整剤及び/又は酸化還元電位調整剤を超純水に溶解させて調製した薬液であり、そのpH調整剤としては、塩酸、酢酸、硝酸、リン酸、硫酸、フッ酸、アンモニア、水酸化ナトリウム、水酸化カリウム、テトラメチルアンモニウムヒドロキシド、又は炭酸アンモニウム等を用いることができる。
また、酸化還元電位調整剤としては過酸化水素や硝酸を用いることができる。
本発明で用いる薬液は、通常、これらの薬剤を20~48重量%程度の濃度で含むものであり、このような薬液を超純水に薬注して、通常、薬剤濃度0.1~100mg/L程度の洗浄水が製造される。
超純水に溶解させるガスとしては、H2,O3,CO2,NH3などが例示される。これらの濃度も、通常はppmオーダー例えば50ppm以下特に20ppm以下の希薄濃度とされる。
上記の通り、本発明では、製造部2における酸、アルカリ、酸化剤、還元剤等の溶解は、従来の薬注機構あるいはガス溶解機構をそのまま適用できる。即ち、薬注であれば、ポンプやN2等の不活性ガスによる圧送で、ガス溶解であれば、気体透過膜モジュールやエジェクターなどによる気液接触操作で、所望の溶質濃度となるように溶解させる。
除去部4における余剰水の処理は、イオン交換樹脂又は白金族触媒のみで対応可能である。即ち、ppmオーダーの酸・アルカリはイオン交換装置で容易に除去できる。電気再生式イオン交換装置(いわゆるEDI)を適用することもできる。酸化剤・還元剤の除去には白金ナノコロイド担持樹脂などの触媒が有効である。オゾンを多く含む余剰水がある場合には、オゾン分解に適した触媒を追加することが望ましい。
洗浄水ライン3からの余剰洗浄水中の溶質濃度がppmオーダーと非常に低く、また、溶質の種類が限られているため、溶質を十分に除去することは容易であり、簡単なイオン交換装置と触媒装置の組み合わせで超純水に近い純度に戻る。従って、除去部4で溶質が除去された回収水は、余剰超純水のリターン配管や超純水タンクに導くことができ、無駄のない再利用が可能である。
上記実施の形態は本発明の一例であり、本発明は上記以外の形態とされてもよい。上記実施の形態では複数(N個)の洗浄機5A~5Nが設置されているが、図7のように洗浄機は1機だけ設置されてもよい。
本発明を特定の態様を用いて詳細に説明したが、本発明の意図と範囲を離れることなく様々な変更が可能であることは当業者に明らかである。
本出願は、2017年4月14日付で出願された日本特許出願2017-080626に基づいており、その全体が引用により援用される。
本出願は、2017年4月14日付で出願された日本特許出願2017-080626に基づいており、その全体が引用により援用される。
1 超純水ライン
2 洗浄水製造部
3 洗浄水ライン
4 除去部
5,5A~5N 洗浄機
15 薬液タンク
16 薬注ポンプ
20 脱気装置
21 ガス溶解装置
2 洗浄水製造部
3 洗浄水ライン
4 除去部
5,5A~5N 洗浄機
15 薬液タンク
16 薬注ポンプ
20 脱気装置
21 ガス溶解装置
Claims (4)
- 超純水ラインと、該超純水ラインからの超純水にpH調整剤及び/又は酸化還元電位調整剤を添加して一定濃度の洗浄水を製造する洗浄水製造部を有する洗浄水供給装置において、
洗浄水製造部から洗浄機に供給する洗浄水ラインと、
該洗浄水ラインからの余剰洗浄水から溶質を除去する除去部とを備えることを特徴とする洗浄水供給装置。 - 請求項1において、前記洗浄水製造部は、前記超純水ラインに超純水を定量供給する手段と、超純水に対し溶質を定量供給する手段とを有することを特徴とする洗浄水供給装置。
- 請求項1又は2において、前記洗浄水ラインに複数の洗浄機が接続されており、前記洗浄水製造部は、すべての洗浄機の最大使用量の合計よりも多量の洗浄水を製造可能であることを特徴とする洗浄水供給装置。
- 請求項1ないし3のいずれか1項において、前記除去部は、イオン交換樹脂、電気再生式イオン交換装置、又は白金ナノコロイド担持樹脂を備えることを特徴とする洗浄水供給装置。
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JP6531406B2 (ja) | 2015-01-29 | 2019-06-19 | 栗田工業株式会社 | 半導体装置の製造方法 |
JP6477771B2 (ja) | 2017-04-14 | 2019-03-06 | 栗田工業株式会社 | 洗浄水供給装置 |
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JP2000037695A (ja) * | 1998-07-24 | 2000-02-08 | Kurita Water Ind Ltd | オゾン水供給装置 |
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US11319226B2 (en) | 2022-05-03 |
TW201908242A (zh) | 2019-03-01 |
JP6477771B2 (ja) | 2019-03-06 |
CN110494960A (zh) | 2019-11-22 |
KR20190138776A (ko) | 2019-12-16 |
US20200039854A1 (en) | 2020-02-06 |
JP2018182098A (ja) | 2018-11-15 |
CN110494960B (zh) | 2023-10-10 |
TWI742266B (zh) | 2021-10-11 |
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