WO2018182167A1 - 자석 구조체, 자석 유닛 및 이를 포함하는 마그네트론 스퍼터링 장치 - Google Patents

자석 구조체, 자석 유닛 및 이를 포함하는 마그네트론 스퍼터링 장치 Download PDF

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Publication number
WO2018182167A1
WO2018182167A1 PCT/KR2018/001672 KR2018001672W WO2018182167A1 WO 2018182167 A1 WO2018182167 A1 WO 2018182167A1 KR 2018001672 W KR2018001672 W KR 2018001672W WO 2018182167 A1 WO2018182167 A1 WO 2018182167A1
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WO
WIPO (PCT)
Prior art keywords
magnet
magnetron sputtering
sputtering device
wire
magnetic
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PCT/KR2018/001672
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English (en)
French (fr)
Korean (ko)
Inventor
김정건
소병호
김선영
우창원
조성기
Original Assignee
한국알박(주)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 한국알박(주) filed Critical 한국알박(주)
Priority to JP2019536079A priority Critical patent/JP7084932B2/ja
Priority to CN201880005034.6A priority patent/CN110073464B/zh
Publication of WO2018182167A1 publication Critical patent/WO2018182167A1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F7/00—Magnets
    • H01F7/02—Permanent magnets [PM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F7/00—Magnets
    • H01F7/02—Permanent magnets [PM]
    • H01F7/0205—Magnetic circuits with PM in general
    • H01F7/021—Construction of PM
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F7/00—Magnets
    • H01F7/06—Electromagnets; Actuators including electromagnets
    • H01F7/08—Electromagnets; Actuators including electromagnets with armatures
    • H01F7/121—Guiding or setting position of armatures, e.g. retaining armatures in their end position
    • H01F7/122—Guiding or setting position of armatures, e.g. retaining armatures in their end position by permanent magnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3452—Magnet distribution

Definitions

  • the present invention relates to a magnet structure that can be used in a magnetron sputtering apparatus, and more particularly, to a magnet structure, a magnet unit and a magnetron sputtering apparatus having the same, which can improve the uniformity during the sputtering process.
  • Sputtering apparatus is a device for depositing a thin film on a substrate in the manufacture of semiconductors, FPD (LCD, OLED, etc.) or solar cells.
  • the sputtering apparatus may also be used in a roll to roll apparatus.
  • One of the sputtering apparatuses, the magnetron sputtering apparatus injects gas into a vacuum chamber to generate a plasma, collides with the target material to be deposited, and then collides with the target material to be deposited.
  • the magnet unit is disposed on the rear surface of the target so as to form a magnetic force line on the target. That is, the substrate is provided on the front surface of the target, and a magnet unit is formed on the rear of the target.
  • Such magnetron sputtering apparatuses are widely used because they can produce thin films at relatively low temperatures, and have the advantage that ions accelerated by an electric field are densely deposited on a substrate and have a high deposition rate.
  • inline or cluster systems are used to deposit thin films on large area substrates.
  • In-line and cluster systems are provided with a plurality of processing chambers between the load chamber and the unload chamber so that the substrate loaded into the load chamber passes through the plurality of processing chambers and proceeds in a continuous process.
  • the sputtering apparatus is provided in at least one processing chamber, and magnet units are installed at regular intervals.
  • the erosion of the target surface is determined by the plasma density by the electric field and the magnetic field.
  • the magnet unit since the magnet unit has a ground potential concentrated at an edge, that is, at least one end in the longitudinal direction, the plasma density of the edge of the substrate is larger than that of other regions, and thus the sputtering speed of the target is faster than that of other regions. Therefore, the thickness distribution of the thin film deposited on the substrate is not uniform, causing a problem of deterioration of the film quality distribution, and a problem of reducing the target use efficiency due to excessive erosion of a specific portion of the target due to the plasma density difference.
  • Another way to solve the problem is to adjust the strength of the magnetic field on the target surface using a shunt or the like, adjust the distance using a liner at the edge of the magnet, or use a Z-axis motor at the edge of the magnet. How to add it.
  • all of these methods increase manufacturing costs, require manual adjustment of the strength of the magnetic field, and require several repetitive operations because the adjustment of the magnetic field strength is not performed locally. There is.
  • An object of the present invention is to adjust the magnetic field strength without opening the chamber while maintaining the degree of vacuum of the magnetron sputtering apparatus.
  • An object of the present invention is to provide a magnet structure capable of largely changing a magnetic field and easily controlling the change, and a magnetron sputtering apparatus having the same.
  • Magnet structure of the magnetron sputtering apparatus of the present invention the permanent magnet; And a wire provided to surround the permanent magnet.
  • the magnet structure of the magnetron sputtering apparatus it is possible to control the strength of the magnetic field of the magnet structure by adjusting one or more of the voltage and current applied to the wire.
  • the permanent magnet may include: a first portion extending in a vertical direction to which the wire is wound; And a second portion extending in a horizontal direction from at least one of an upper end and a lower end of the first part, and wherein the wire is not wound.
  • the horizontal length of the second portion may be greater than the sum of the horizontal length of the first partial cross section and the total thickness of the wire cross section.
  • the second portion may include one or more branch portions extending in the vertical direction.
  • the permanent magnet may be any one selected from the group consisting of a T-shaped structure, an I-shaped structure, an E-shaped structure, and an F-shaped structure.
  • the magnet unit of the magnetron sputtering apparatus of this invention is a yoke; And a plurality of magnet structures according to an embodiment of the present invention provided on the yoke, wherein the plurality of magnet structures may be connected to each other in a structure including a series structure, a parallel structure, or both. .
  • the magnet unit of the magnetron sputtering apparatus by adjusting one or more of the voltage and current applied to the wire of each of the magnet structure to at least one region of the magnetic unit is different in intensity from the other region It may be controllable to have.
  • the plurality of magnet structures may include: a first magnet group having a magnetic pole selected from N pole and S pole; And a second magnet group having a magnetic pole different from that of the first magnet group among the N pole or the S pole.
  • the second magnet group may be disposed outside the first magnet group.
  • Magnetron sputtering apparatus of the present invention the substrate mounting portion on which the substrate is mounted; At least one magnet part facing the substrate seating part and spaced apart from each other by a predetermined distance; And at least one target unit installed between the substrate seating unit and the magnet unit, wherein the magnet unit may include at least one magnet unit according to an embodiment of the present invention.
  • the distance between the upper surface of the permanent magnet of the magnet unit and the upper surface of the target portion may be from 30 mm to 90 mm.
  • the magnet part may further include cooling means provided on at least one side of the magnet structure.
  • the magnet part may further include a molding part for modularizing the yoke, the magnet structure, and the cooling means.
  • the magnetron sputtering apparatus generates a uniform magnetic field, and there is an effect that the local magnetic field can be controlled without additional process or manual labor.
  • the strength of the magnetic field may be adjusted by using a voltage and a current applied to the wound wire.
  • the intensity of the magnetic field of the partial region of the magnet or the intensity of the magnetic field of the entire region of the magnet may be adjusted through an external control device. That is, while maintaining the vacuum inside the sputtering device has the effect of controlling the strength of the magnetic field formed by a simple method outside the device.
  • 1A to 1C, 2 and 3 are cross-sectional views schematically showing the structure of each magnet structure according to an embodiment of the present invention.
  • 4 and 5 are plan views schematically showing the structure of a magnet unit according to an embodiment of the present invention.
  • 6 to 8 are cross-sectional views schematically illustrating a part of a structure of each magnet unit viewed in the x-axis direction according to an embodiment of the present invention.
  • FIG. 9 is a schematic cross-sectional view showing the structure of a magnetron sputtering apparatus according to an embodiment of the present invention.
  • FIG. 10 is a cross-sectional view schematically illustrating a structure of the magnet unit included in the magnetron sputtering apparatus according to the exemplary embodiment as viewed in the y-axis direction.
  • Magnet structure of the magnetron sputtering apparatus of the present invention the permanent magnet; And a wire provided to surround the permanent magnet.
  • the magnet structure may include a permanent magnet and a wire wound around the permanent magnet.
  • the magnetic field may be determined by the number of windings of the wire wound on the permanent magnet, the material (ie, resistance) of the wire, and the voltage, current, or the like applied to the wire.
  • the permanent magnet can be formed of, for example, anisotropic or isotropic sintered magnets, samarium cobalt magnets, ferritic materials mainly composed of neodium, iron and boron.
  • a portion of the surface of the permanent magnet may be coated with an anti-corrosion material or an insulating material, the whole may be coated with an insulating material.
  • a method of winding a wire directly on a permanent magnet is used.
  • one comparative example can be suggested.
  • the method of forming the magnet structure according to the present invention has an advantage in that the distance between the permanent magnet and the target is closer than that of the comparative example.
  • the strength of the formed magnetic field can be enhanced compared to the method of Comparative Example.
  • the height of the winding part which can wind a wire becomes long, and there exists an effect which can improve the change rate of a magnetic field.
  • the magnet structure of the magnetron sputtering apparatus it is possible to control the strength of the magnetic field of the magnet structure by adjusting one or more of the voltage and current applied to the wire.
  • the number of windings of the wire and the material of the wire are variables that are fixedly determined in the design of the magnet unit of the first magnetron sputtering device, and the applied voltage and current are parameters that can be flexibly adjusted in the process of driving the magnetron sputtering device. Therefore, the magnetic structure provided by the present invention may enable the strength control of the magnetic field in the vacuum chamber as intended by adjusting the voltage and current applied to the wire in an external power supply.
  • the magnetic structure of the present invention by winding the wire directly to the permanent magnet, such as an electromagnet, it is possible to control the strength of the magnetic field when using only the existing permanent magnet and can generate a stronger magnetic field.
  • the permanent magnet such as an electromagnet
  • a uniform magnetic field as a whole can be generated.
  • the strength of the magnetic field is not uniform and the erosion near the edge of the target is increased.
  • the local magnetic field strength can be controlled. Phosphorus erosion can be prevented.
  • FIGS. 1A to 1C, 2 and 3 are cross-sectional views schematically showing the structure of each magnet structure according to an embodiment of the present invention.
  • the structure and function of each magnet structure shown in each drawing will be described in detail with reference to FIGS. 1A to 1C, 2 and 3.
  • the permanent magnet 100 may include: a first portion 110 extending in a vertical direction so that the wire 200 is wound; And a second portion 120 extending in a horizontal direction from at least one of an upper end and a lower end of the first part, and wherein the wire is not wound.
  • the permanent magnet of this invention is divided into the part to which a wire is wound, and the part to which a wire is not wound.
  • a region including a portion around which the wire is wound is referred to as a second portion among the permanent magnets.
  • the first portion may be formed in a pillar-like structure extending in the vertical direction.
  • the wire is in contact with and wound around the first portion.
  • the wire may wind the pillar at least once. In other words, the wire may contact the vertical columnar structure and be wound around the column. Therefore, the height of the wound wire can be determined according to the vertical length of the first portion.
  • the flat cross section of the pillar may be a circle, square, pentagonal or hexagonal structure, if the shape of the pillar to which the wire can be wound is not particularly limited in shape in the present invention.
  • the wire is wound around at least a portion of the first portion extending in this vertical direction.
  • the second portion may extend in the horizontal direction from the top, bottom or both of the first portion.
  • the second portion extends in the horizontal direction, and in the process of manufacturing the magnet unit in which the plurality of magnet structures are connected to each other, the second part may function as an insulator for preventing a short in relation to an adjacent magnet structure. Since the adjacent magnetic structure will also be provided with a current flowing wire, the second portion is formed to extend in the horizontal direction, it is possible to prevent the problem caused by the direct contact between the wire and the wire.
  • the second portion may be formed extending in both the horizontal direction of the first portion.
  • the second portions extending from both the top, bottom or both of the first portion may be the same length.
  • the first part may be located at the center of the second part.
  • the lengths of the second portions extending to both sides may be different from each other. In this case, the first portion may not be located at the center of the second portion.
  • the horizontal length (I in FIG. 1A) of the second portion is a horizontal length of the first partial cross section.
  • the total thickness of the wire cross section It may be greater than the sum of.
  • the horizontal length of the second portion is greater than the sum of the horizontal length of the first partial cross section and the total thickness of the wire cross section, such that the wires 200 of the magnetic structure are adjacent when the plurality of magnetic structures are arranged. And may not be in contact with the wires of the structure. As a result, there is an effect of preventing the risk that short-circuiting occurs due to the wires in which current flows and the wires contact each other.
  • the horizontal length of the second portion is formed to be larger than the sum of the horizontal length of the first partial cross section and the total thickness of the wire cross section, so that even when a plurality of magnetic structures of the present invention are connected and used, insulation between the plurality of magnetic structures is achieved. This can be done.
  • the longer the vertical length of the first portion the longer the horizontal length of the second portion may increase the number of turns of the wire. This is because the longer the vertical direction of the first part, the wider the area of the first part in which the wire can be wound. In addition, this is because the longer the horizontal length of the second portion is, the thicker the total thickness of the wire cross section formed by winding the wire can be formed.
  • the second portion 120 may include one or more branches 122 extending in the vertical direction.
  • the second portion may have one or more branch portions extending in the vertical direction as shown in FIGS. 2 and 3. Branches may be connected to each other as shown in FIG. 2 at both ends of the second portion extending in the horizontal direction. When the branch is extended at both ends of the second portion, it may form a structure such as an E shape lying 90 degrees.
  • branch portion may be connected and formed as shown in FIG. 3 only at one end of the second portion extending in the horizontal direction. If the branch portion is extended at one end of the second portion, it may form a structure such as an F shape laid down 90 degrees.
  • the branch portion is sufficient to extend from a portion of the second portion and is not necessarily formed at the end of the second portion.
  • the vertical length of the branch portion may be formed to be the same as the vertical length of the first portion 110, as shown in FIGS.
  • the vertical length of the branch portion may be formed to be longer or shorter than the vertical length of the first portion by various modifications according to design convenience.
  • the permanent magnet may be any one selected from the group consisting of a T-shaped structure, an I-shaped structure, an E-shaped structure, and an F-shaped structure.
  • the second portion may have a structure extending from an upper end of the first portion as shown in FIG. 1A.
  • the permanent magnet may form a shape structure such as T.
  • the second part may have a structure extending from both the upper end and the lower end of the first part as shown in FIG. 1B according to design needs, in which case the permanent magnet may form a shape structure such as I.
  • the upper and lower structures of the second portion 120 may have the same length and width.
  • the upper and lower structures 120 of FIG. 1B may be provided with one length longer or shorter, wider or narrower than the other one.
  • the second portion may be a structure extending only from the lower end of the first portion, as shown in Figure 1c according to the design needs.
  • the permanent magnet may form an inverted T-shaped structure, that is, a structure having a shape such as ⁇ .
  • the wire of the present invention may be made of a conductive material.
  • the wire 200 may be made of a conductive material such as aluminum or copper having a predetermined thickness.
  • the wire may be coated with an insulating material on the surface. For example, enamel, polymer, or the like can be coated on the surface of the conductive wire.
  • the wire may be wound a predetermined number of times to wind the first portion of the permanent magnet. The number of windings, the thickness and the material (that is, the resistance) of the wire, the material and the shape of the permanent magnet, and the like are the primary factors for determining the magnetic field strength formed by the magnet structure of the present invention.
  • the strength of the magnetic field of the magnet structure may be controlled by adjusting the voltage and current applied to the wire after winding, which is a secondary factor in determining the magnetic field strength of the magnet structure of the present invention. Therefore, the magnetic field of the desired intensity can be realized by comprehensively controlling the primary and secondary factors.
  • the wire may be made of a single layer to wind the permanent magnet, and at least two layers may be formed to wind the permanent magnet.
  • 1A to 1C illustrate a structure in which a wire 200 is wound three times around the first portion 110 of the permanent magnet. That is, a wire is wound in three layers by the said 1st part.
  • the following describes a magnet unit formed to include a plurality of the above-described magnet structures on the yoke.
  • the following magnet unit is a kind of magnet unit, and the formed magnet units may be used as the magnet part of the magnetron sputtering device individually, but a plurality of magnet units may be provided to form the magnet part of the magnetron sputtering device in various arrangements.
  • FIGS. 4 and 5 are plan views schematically showing the structure of a magnet unit according to an embodiment of the present invention.
  • first magnet group and the second magnet group formed on the magnet unit and the yoke of the magnet unit will be described with reference to FIGS. 4 and 5.
  • the first magnet group and the second magnet group below are formed by connecting a plurality of magnet structures.
  • Yoke 310 may have a flat or cylindrical shape.
  • the yoke 310 may use, for example, ferritic stainless steel.
  • the first magnet group 20 and the second magnet group 30 may be installed on one surface or the surface of the yoke 310 to form a magnet unit. That is, the first magnet group and the second magnet group may be installed on one surface of the flat yoke 310 or the first magnet group and the second magnet group may be installed on the surface of the cylindrical yoke.
  • the formed magnet unit may include a first magnet group and a second magnet group, and may be disposed as one of the shapes of the magnet unit illustrated in FIGS. 4 and 5.
  • two or more of the forms of the magnet unit illustrated in FIGS. 4 and 5 may be arranged to be connected in plurality. Meanwhile, the magnet unit may be arranged in a form different from those of the magnet unit illustrated in FIGS. 4 and 5.
  • the arrangement of the first magnet group and the second magnet group will be described in detail.
  • the first magnet group 20 is fixed to the center of the yoke 310, and the second magnet group 30 is spaced apart from the first magnet group. It may be fixed around the outer side of the first magnet group.
  • the height and width of the first magnet group and the second magnet group may be the same. However, the width and height may vary depending on design needs such that the width of the first magnet group may be wider or narrower than the second magnet group, and the height of the first magnet group may be higher or lower than the height of the second magnet group. It can be modified.
  • the first magnet group is formed at a predetermined height from one surface of the yoke and may be provided in a straight form or a closed loop shape. That is, the first magnet group may be provided in a straight form having a predetermined length and width as shown in FIG. 4, or may be provided in a closed loop form as shown in FIG. 5.
  • the straight form that is, the shape may be provided in a substantially bar shape having a predetermined width in the x-axis direction and a predetermined length in the y-axis direction perpendicular to the x-axis direction.
  • the x-axis direction may be the same as the moving direction of the substrate in the magnetron sputtering device. As shown in FIG.
  • the first magnet group 20 in the closed loop form is spaced apart from each other by a predetermined distance and has the same length of the first and second long sides 22a and 22b and the first and second long sides.
  • a first short side portion and a second short side portion 24a and 24b formed to connect between the first long side portion and the second long side portion may be included at an edge of the portion.
  • the first short side portion and the second short side portion may be provided in a straight line to connect edges of the first long side portion and the second long side portion.
  • the first magnet group 20 may be provided such that the long side portion and the short side portion have a rectangular shape.
  • the first magnet group may be provided in various shapes having not only a rectangular shape but also a circular or closed loop shape.
  • the corner portion where the long side portion and the short side portion meet may be formed round.
  • the long side portion of the first magnet group may be provided spaced apart from the central portion of the yoke by a predetermined interval.
  • the second magnet group 30 may be spaced apart from the first magnet group 20 by a predetermined interval, and may be provided outside the first magnet group 20. In one example of the present invention, the second magnet group 30 may be provided outside the first magnet group 20 forming a linear shape or a closed loop shape. The second magnet group may be provided in a shape different from or similar to the first magnet group. The second magnet group may be provided in a closed loop shape. As shown in FIG. 5, the closed loop-shaped second magnet group is spaced apart from the first long side portion and the second long side portions 22a and 22b of the first magnet group by a predetermined distance and longer than the third long side portion and the fourth long side.
  • the portions 32a and 32b may be provided, and the third short side portion and the fourth short side portion 34a and 34b may be connected to each other at the edges of the third long side portion and the fourth long side portion.
  • the second magnet group 30 may be provided to surround the first magnet group 20 while the long sides 32a and 32b and the short sides 34a and 34b have a rectangular shape.
  • the second magnet group 30 may be provided in various shapes having a closed loop shape as well as a rectangular shape. For example, the corner portion where the long side portion and the short side portion meet may be formed round.
  • the magnet structures forming the first magnet group and the second magnet group may be formed to have different polarities, respectively. That is, if the permanent magnets forming the first magnet group have the N pole, the permanent magnets forming the second magnet group have the S pole, and if the permanent magnets of the first magnet group have the S pole, The permanent magnet may have an N pole.
  • the permanent magnet of the magnet unit may have an array of S-N-S or an array of N-S-N.
  • the permanent magnet of the magnet unit may have an array of S-N-N-S or an array of N-S-S-N.
  • the present invention may include not only a case in which a plurality of magnet units including two magnets having different polarities are provided, but also a case in which a plurality of magnets are arranged in different polarities, so that magnets may be arranged in NS -...- SN. .
  • the magnet unit of the magnetron sputtering apparatus of this invention is a yoke; And a plurality of magnet structures according to an embodiment of the present invention provided on the yoke, wherein the plurality of magnet structures may be connected to each other in a structure including a series structure, a parallel structure, or both. .
  • the magnet structure provided in an embodiment of the present invention may be provided in plural as described above to form a magnet unit.
  • the magnet structure may be provided on the yoke, and the plurality of magnet structures may form a structure connected in series or in parallel with each other.
  • a magnet unit having an arrangement of a magnet structure as shown in any one of FIGS. 1A to 1C, 2 and 3 may be formed.
  • the number of magnet structures included in the magnet unit may be determined according to the size of the sputtering apparatus. If a large area substrate is required for sputtering, a magnet unit containing more magnet structures may be required.
  • 6 to 8 are cross-sectional views schematically illustrating a structure of each magnet unit according to an embodiment of the present invention as viewed in the x-axis direction.
  • FIG. 6 a structure in which the magnetic structure including the T-shaped permanent magnet shown in FIG. 1A is repeatedly arranged so as to be adjacent to each other is illustrated.
  • a structure in which the magnet structure is fixed to the adhesive layer 320 on the yoke 310 may be confirmed.
  • an adhesive layer may be formed between the magnet structure and the yoke by using an adhesive to secure the fixed structure.
  • the fixed structure may be secured by fixing between the magnet structure and the yoke using a bolt.
  • the method for fixing the magnet structure on the yoke may use a variety of additional means in addition to using an adhesive or using a bolt.
  • FIG. 7 a structure in which the magnet structure including the T-shaped permanent magnet shown in FIG. 1A and the magnet structure including the E-shaped permanent magnet shown in FIG. 2 are repeatedly arranged to cross each other is illustrated.
  • FIG. 8 a structure in which the magnetic structure including the E-shaped permanent magnet shown in FIG. 2 is repeatedly arranged so as to be adjacent to each other is illustrated.
  • each of the magnet structures formed on the yoke may be connected to each other in a structure including a series structure, a parallel structure, or both.
  • the magnet unit of the magnetron sputtering apparatus by adjusting one or more of the voltage and current applied to the wire of each of the magnet structure to at least one region of the magnetic unit is different in intensity from the other region It may be controllable to have.
  • the strength of the magnetic field is different from one region and the other region of the magnet unit Can be controlled to have.
  • the connection of the circuit is controlled by installing a switch or a relay that can block a current flowing in a wire installed in the magnet structures located in one region and the magnet structures located in another region.
  • one region and the other region of the magnet unit may be controlled to have different strengths of the magnetic field.
  • the plurality of magnet structures may include: a first magnet group having a magnetic pole selected from N pole and S pole; And a second magnet group having a magnetic pole different from that of the first magnet group among the N pole or the S pole.
  • the second magnet group may be disposed outside the first magnet group.
  • the magnetron sputtering apparatus described in the present invention includes at least one magnet portion, and the magnet portion is provided with at least one magnet unit.
  • each part which comprises a magnetron sputtering apparatus and a magnetron sputtering apparatus is demonstrated.
  • FIG. 9 is a schematic cross-sectional view showing the structure of a magnetron sputtering apparatus according to an embodiment of the present invention.
  • the sputtering apparatus provided in the present invention includes a magnet unit 630, a backing plate 650, a target 640, and a substrate seating portion 620. ) May be included. On the substrate seating portion, a substrate 610 is provided on which a sputtered layer is formed.
  • the magnet unit 630 may include a yoke 310, a first magnet group in the center, and a second magnet group outside the first magnet group. Each magnet group may be composed of a permanent magnet 100 and a wire 200 winding the permanent magnet.
  • the substrate mounting portion 620 and the magnet unit 630 may be provided to face each other, that is to face each other.
  • the substrate seating portion may be provided in the upper side, the lower side or the side in the device, the magnet unit may be provided to face this.
  • the magnet unit may be provided on the upper side
  • the magnet unit may be provided on the lower side.
  • the magnet unit may be provided on the other side facing it.
  • the magnet unit 630 illustrated in FIG. 9 is provided to face the substrate and includes a yoke 310, a first magnet group in the center formed on the yoke, and a second magnet group provided on the left and right sides of the first magnet group. can do.
  • the first magnet group and the second magnet group include a structure in which a plurality of magnet structures are connected.
  • one magnet unit is illustrated in FIG. 9 by way of example, two or more magnet units may be provided, and the magnet unit may have an x-axis direction, an y-axis direction and an x-axis direction orthogonal to the x-axis direction. It is also possible to reciprocate in one or more of the z-axis directions orthogonal to all of the y-axis directions.
  • two or more magnet units 630 may be provided.
  • the at least two magnet units may be provided in the same size and the same structure and spaced apart at the same interval.
  • the backing plate 650 is provided between the magnet unit 630 and the substrate seating part 620.
  • the target 640 is fixed to one surface of the backing plate. That is, the target is fixed to one surface of the backing plate facing the substrate 610.
  • the target 640 is fixed to the backing plate 650 and is made of a material to be deposited on the substrate 610.
  • the target 640 may be a metal material or an alloy including the metal material.
  • the target 640 may also be a metal oxide, metal nitride, or dielectric.
  • the target may be an element selected from Mg, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Pd, Pt, Cu, Ag, Au, Zn, Al, In, C, Si, Sn, and the like.
  • the main ingredient may be used.
  • the backing plate 650 and the target 640 may have a total thickness of about 5 mm to about 50 mm.
  • the substrate seating part 620 secures the substrate so that the deposition material may be uniformly deposited on the substrate 610.
  • the substrate When the substrate is mounted, the substrate may be fixed to the edge of the substrate by using fixing means, or the substrate may be fixed to the rear surface of the substrate.
  • the substrate seating part may be provided in a substantially rectangular or circular shape having a shape of a substrate to support and fix all of the rear surfaces of the substrate.
  • the substrate seating portion may be provided with four bars having a predetermined length spaced apart from each other at predetermined intervals to fix the edge portion of the substrate, and the edges of the bars contact each other to provide a hollow rectangular frame shape.
  • the substrate mounting portion may move in one direction while the substrate is mounted.
  • the thin film may be deposited on the substrate while progressing in one direction. Therefore, a moving means (not shown) for moving the substrate seating part may be provided on a surface on which the substrate seating part is not seated.
  • the moving means may include a roller for moving in contact with the substrate seating portion, and a magnetic conveying means for moving with magnetic force spaced apart from the substrate seating portion.
  • part of the substrate seating portion may function as a moving means.
  • the substrate seating part 620 may be provided with a lift pin for lifting the substrate 610.
  • the substrate may be a substrate for manufacturing a semiconductor, an FPD (LCD, OLED, etc.), a solar cell, or the like, and may be a silicon wafer, glass, or the like.
  • the substrate may be a film substrate applied to a roll-to-roll. In this embodiment, a large area substrate such as glass is used.
  • Magnetron sputtering apparatus of the present invention the substrate mounting portion on which the substrate is mounted; At least one magnet part facing the substrate seating part and spaced apart from each other by a predetermined distance; And at least one target unit installed between the substrate seating unit and the magnet unit, wherein the magnet unit may include at least one magnet unit according to an embodiment of the present invention.
  • the magnet portion may be provided within 30% of the longitudinal direction from the edge of the target portion.
  • the magnet part may be disposed in an area within 30% of the portion where the erosion of the target is greatest (ie, the longitudinal direction from the edge of the target). That is, the erosion of the target occurs a lot in the edge portion, it is possible to control the strength of the magnetic field by providing a magnetic structure at a position opposite to the portion and by adjusting the voltage, current, etc. applied to the wire. As a result, by controlling the intensity of the magnetic field in the portion where the erosion of the target is excessively formed, it is possible to form an overall degree of erosion and to prevent local excessive erosion.
  • the distance between the upper surface of the permanent magnet of the magnet unit and the upper surface of the target portion may be 30 mm to 90 mm.
  • the distance between the upper surface of the permanent magnet and the upper surface of the target portion is a value in consideration of the thickness of the target portion, the thickness of the backing plate, the distance between the backing plate and the magnet unit, and when the distance is too close to less than 30 mm, plasma may not be stably formed.
  • the problem may occur that the magnetic field efficiency is lowered, and when the distance is too far exceeding 90 mm, the magnetic field may be weakly formed around the target portion.
  • the distance between the upper surface of the permanent magnet and the upper surface of the target portion may be further narrowed by the thickness of the backing plate.
  • the distance can be shortened up to approximately 10 mm.
  • FIG. 10 is a cross-sectional view schematically illustrating a structure of the magnet unit included in the magnetron sputtering apparatus according to the exemplary embodiment as viewed in the y-axis direction.
  • FIG. 10 corresponds to a structure in which a cross section of a magnet unit in which a plurality of magnet structures including a T-shaped permanent magnet as shown in FIG. 1A is formed is viewed from the y-axis direction.
  • the magnet part may further include a cooling means 410 provided on at least one side of the magnet structure.
  • the magnet structure included in the magnet portion of the magnetron sputtering apparatus may be gradually heated when a predetermined current or voltage is applied to the wire. Therefore, cooling means for cooling the magnet structure may be provided on at least one side of the magnet structure.
  • a plurality of magnet structures may be coupled to each other so that at least two or more magnet structures may be provided, and the cooling means 410 may be provided between the permanent magnets arranged in the horizontal direction.
  • the cooling means may comprise a refrigerant supply unit (not shown) for supplying water, air or other refrigerant, and a refrigerant circulation path through which they can be circulated.
  • the cooling means 410 shown in the embodiment of FIG. 10 is a refrigerant circulation path.
  • the magnet part may further include a molding part 510 for modularizing the yoke, the magnet structure, and the cooling means.
  • the magnet structure including the cooling means may be provided with a molding to cover the yoke, the magnet structure, and the cooling means.
  • the magnet structure may be manufactured in one module unit by using the molding part.
  • the magnet part may be controllable such that at least one area of the magnet part has a strength of a magnetic field different from other areas by adjusting at least one of voltage and current applied to each of the magnet units.
  • the magnet unit included in the magnetron sputtering apparatus may adjust one or more of the voltage and the current in units of magnet units, as may be adjusted to the voltage and current applied to each wire of the magnet structure in the magnet unit.
  • a method of supplying a current flowing through a wire installed in a magnet unit positioned in one region and a magnet unit positioned in another region may be used from a separate power source.
  • the adjustment of the voltage and current may be performed using various means, including a switch or relay, or configuring a series or parallel circuit. As a result, different magnetic fields may be formed in the magnet part between the one region and the other region.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
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  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
PCT/KR2018/001672 2017-03-31 2018-02-08 자석 구조체, 자석 유닛 및 이를 포함하는 마그네트론 스퍼터링 장치 WO2018182167A1 (ko)

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JP2019536079A JP7084932B2 (ja) 2017-03-31 2018-02-08 磁石構造体、磁石ユニット及びこれを含むマグネトロンスパッタリング装置
CN201880005034.6A CN110073464B (zh) 2017-03-31 2018-02-08 磁铁结构体、磁铁单元及包括此的磁控管溅射装置

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KR1020170042238A KR101924143B1 (ko) 2017-03-31 2017-03-31 자석 구조체, 자석 유닛 및 이를 포함하는 마그네트론 스퍼터링 장치
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CN113056573B (zh) 2019-05-28 2023-07-21 株式会社爱发科 溅射装置、薄膜制造方法

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JPH07233473A (ja) * 1994-02-22 1995-09-05 Hitachi Ltd マグネトロンスパッタ装置
KR20090117038A (ko) * 2008-05-08 2009-11-12 이흥규 마사지기
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JP3847866B2 (ja) * 1996-11-21 2006-11-22 株式会社アルバック スパッタリング装置
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TWI456082B (zh) * 2010-03-26 2014-10-11 Univ Nat Sun Yat Sen 磁控式電漿濺鍍機
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US4810346A (en) * 1987-08-21 1989-03-07 Leybold Aktiengesellschaft Magnetron type sputtering cathode
JPH07233473A (ja) * 1994-02-22 1995-09-05 Hitachi Ltd マグネトロンスパッタ装置
KR20090117038A (ko) * 2008-05-08 2009-11-12 이흥규 마사지기
KR20110115794A (ko) * 2010-04-16 2011-10-24 김창수 마그네트론 스퍼터링장치
KR20140014780A (ko) * 2012-07-26 2014-02-06 주식회사 아비즈알 마그네트론 냉각부를 구비한 마그네트론 스퍼터링 장치

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KR101924143B1 (ko) 2018-11-30
JP7084932B2 (ja) 2022-06-15
TWI741165B (zh) 2021-10-01
JP2020512480A (ja) 2020-04-23
CN110073464B (zh) 2022-04-19
CN110073464A (zh) 2019-07-30
KR20180111366A (ko) 2018-10-11
TW201837223A (zh) 2018-10-16

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