WO2014132308A1 - スパッタリング装置 - Google Patents
スパッタリング装置 Download PDFInfo
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- WO2014132308A1 WO2014132308A1 PCT/JP2013/006789 JP2013006789W WO2014132308A1 WO 2014132308 A1 WO2014132308 A1 WO 2014132308A1 JP 2013006789 W JP2013006789 W JP 2013006789W WO 2014132308 A1 WO2014132308 A1 WO 2014132308A1
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- backing plate
- target
- shield
- magnet
- facing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3441—Dark space shields
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3417—Arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3461—Means for shaping the magnetic field, e.g. magnetic shunts
Definitions
- the present invention relates to a sputtering apparatus.
- Sputtering In the manufacture of integrated circuits, display panels, disks, and the like, sputtering (hereinafter also referred to as sputtering) is widely used to form a film on a substrate such as a semiconductor wafer, glass panel, or resin disk.
- Sputtering is a film forming technique for forming a film by causing ions to collide with the surface of a target and thereby depositing particles emitted from the surface on a substrate.
- the target is fixed to the backing plate.
- the backing plate is cooled by the cooling means, thereby cooling the target.
- the backing plate also functions as an electrode that applies a voltage to the target.
- Patent Document 1 In order to perform sputtering with high efficiency, magnetron sputtering in which a magnet is arranged on the back surface of a target is widely used. In this magnetron sputtering, sputtering is efficiently performed by applying a voltage to the target and confining the plasma formed in the vicinity of the target in the vicinity of the target by a magnetic field. At this time, a configuration has been proposed in which a voltage is applied and a shield surrounding the outer periphery of the target is grounded (hereinafter also referred to as an earth shield) with respect to the target and the backing plate that function as a cathode to form an anode (Patent Document 1). . Furthermore, Patent Document 1 describes that the plasma is confined in the vicinity of the target by forming the shield with a magnetic material.
- FIG. 5 is a drawing created by the inventors of the present application in order to explain the problems of the present invention.
- FIG. 5 schematically shows a peripheral portion of the target 5 in the sputtering apparatus.
- the sputtering apparatus includes a backing plate 7, a fixing portion 13 that fixes the target 5 to the backing plate 7, and a shield 14 that surrounds the periphery of the target 5.
- the fixing portion 13 can be fixed to the backing plate 7 with a screw or the like so as to press the target 5 against the backing plate 7.
- the shield 14 can be disposed around the target 5 so as to cover the fixed portion 13.
- a magnetron unit 8 serving as a magnetic field generating unit is provided on the back side of the backing plate 7 (the side opposite to the side where the target 5 is disposed).
- the magnetron unit 8 includes an annular outer magnet 8a and an inner magnet 8b provided on the inner side, and the outer magnet 8a and the inner magnet 8b can be provided on the yoke 8c.
- the surface of the outer magnet 8a on the backing plate 7 side is magnetized to the north pole
- the surface of the inner magnet 8b on the backing plate 7 side is magnetized to the south pole.
- the backing plate 7 is connected to a power source, and a voltage is applied to the backing plate 7 and the target 5 by the power source, so that plasma is formed in the vicinity of the target 5.
- the shield 14 is made of a magnetic material, a part of the lines of magnetic force ML from the outer magnet 8a flows into the magnetic shield 14.
- the plasma is more confined in the vicinity of the target 5, and the target 5 can be efficiently sputtered.
- the present invention has been made with the above-described problem as a trigger, and in a high-efficiency magnetron sputtering apparatus in which an earth shield made of a magnetic material is arranged on the outer periphery of a target, sputtering capable of reducing unintended discharge between the cathode and the earth shield.
- the purpose is to provide a device.
- a first aspect of the present invention is a sputtering apparatus, a substrate holding unit for holding a substrate, a backing plate having a target mounting surface for holding a target, a power source connected to the backing plate, , A magnet disposed on the opposite side of the backing plate from the target mounting surface, a magnetic material shield surrounding the target mounting surface and grounded, and the backing on the outer periphery of the target mounting surface A magnetic member positioned between the plate and the shield and provided at a position not facing the magnet in a direction perpendicular to the target mounting surface.
- the sputtering apparatus 100 of one embodiment of the present invention includes a backing plate 7, a fixing portion 13 as a magnetic member that fixes the target 5 to the backing plate 7, and a shield 14 that surrounds the periphery of the target 5.
- the fixing portion 13 is fixed to the backing plate 7 by a fastening component 312 such as a screw so as to press the target 5 against the backing plate 7.
- the backing plate 7 can have a conductive sheet or the like from the viewpoint of thermal conductivity. Since the target 5 is exposed to the plasma generated by the discharge, its temperature rises and can expand. Therefore, it is desirable that the fixing unit 13 fixes the target 5 so as to allow the target 5 to expand.
- the shield 14 is disposed around the target 5 so as to cover the fixed portion 13. Thereby, the temperature rise of the fixing
- the backing plate 7 is fixed to the chamber wall 1 via an insulating member 10.
- the backing plate 7 forms a processing container together with the chamber wall 1.
- the backing plate 7 is connected to a discharge power source (not shown) and configured to be applied with a voltage necessary for sputtering. Either a DC power source or a high-frequency power source can be applied as the discharging power source. A voltage is applied to the fixing portion 13 together with the backing plate 7.
- the shield 14 is electrically grounded and functions as an anode when plasma is formed in the vicinity of the target 5.
- the sputtering apparatus 100 is configured to form a film on the substrate S by sputtering in the processing space 12 separated from the external space by the chamber wall 1. Specifically, ions generated by a discharge caused by a voltage applied between the substrate holding unit 4 that holds the substrate S and the backing plate 7 collide with the target 5, whereby particles are released from the target 5. . The particles are deposited on the substrate S, whereby a film is formed on the substrate S. Particles from the target 5 can be deposited on the shield 14 in addition to the substrate S to form a deposit.
- the processing space 12 is exhausted and decompressed by an exhaust device 2 such as a turbo molecular pump through an exhaust port 3 provided in the chamber wall 1.
- Sputtering gas for example, argon
- a gas supply unit not shown.
- the sputtering apparatus 100 includes a magnetron unit 8 that provides a magnetic field around the target 5 and is configured as a magnetron sputtering apparatus.
- the magnetron unit 8 is arranged so that the backing plate 7 is sandwiched between the magnetron unit 8 and the target 5.
- the target 5 may be entirely made of a target material.
- the target material is bonded to a plate member (for example, a plate member made of oxygen-free copper) in contact with the backing plate 7 with solder or the like. You may have the structure which carried out.
- a magnetron unit 8 serving as a magnetic field generating unit is provided on the back side of the backing plate 7 (the side opposite to the side where the target 5 is disposed).
- the magnetron unit 8 includes an outer magnet 8a that is an annular permanent magnet and an inner magnet 8b that is a permanent magnet provided inside the magnet.
- the outer magnet 8a and the inner magnet 8b are provided on a yoke 8c. Further, the outer magnet 8 a and the inner magnet 8 b are magnetized in the direction perpendicular to the target mounting surface of the backing plate 7. In FIG.
- the magnetron unit 8 is configured to be rotatable in the in-plane direction of the target 5.
- the magnetron unit 8 for example, the one disclosed in JP-A-2-107766 is preferably used.
- the outer periphery of the outer magnet 8a and the outer periphery of the surface to be sputtered of the target 5 are substantially on the same plane in the magnetization direction of the outer magnet 8a.
- the magnetron unit 8 When the magnetron unit 8 is configured as a non-target with respect to the rotation axis (the outer magnet 8a and the inner magnet 8b are disposed asymmetrically with respect to the rotation axis), the outermost circumference in the rotation path of the outer magnet 8a, the target What is necessary is just to form so that the outer periphery of 5 to-be-sputtered surface may become the same surface.
- FIG. 3 schematically shows a magnetic field when the shield 14 and the fixed portion 13 are made of a magnetic material.
- the magnetic field lines ML emitted from the outer magnet 8 a the magnetic field lines ML directed toward the outer periphery of the target 5 flow into the shield 14 or the fixed part 13, and almost no magnetic field lines ML flow through the gap SP between the fixed part 13 and the shield 14. For this reason, ions flowing from the plasma formed in the vicinity of the target 5 into the gap SP along the magnetic field lines ML can be reduced, and unintended discharge generated in the gap SP can be suppressed.
- the shield 14 has an opening OP.
- the target 5 has a main body MB disposed inside the opening OP of the shield 14 and a flange FL surrounding the main body MB.
- the flange portion FL includes a first surface 51 that is a surface on the backing plate 7 side and a second surface 52 that is a surface on the opposite side of the first surface 51.
- the fixing portion 13 is configured to be able to fix the target 5 to the backing plate 7 by pressing the flange portion FL that is the peripheral portion of the target 5 against the backing plate 7.
- the shield 14 has a facing portion 141 that faces the backing plate 7 without the fixing portion 13 interposed therebetween, and an outer portion 142 that is outside the facing portion 141. That is, the facing portion 141 is provided so that the fixing portion 13 is not positioned between the facing portion 141 and the backing plate 7.
- the outer side part 142 is arrange
- the distance G1 between the facing portion 141 facing the backing plate 7 without the fixing portion 13 and the backing plate 7 is preferably smaller than the distance G2 between the outer portion 142 and the backing plate 7.
- the inner surface S1 of the shield 14 facing the processing space 12, that is, the inner surface S1 on the substrate holding portion 4 side, is such that the distance D1 between the inner surface S1 and the backing plate 7 decreases from the outer portion 142 toward the facing portion 141.
- a first inclined portion may be a linearly inclined portion or a portion inclined so as to form a curve. This is because the particles sputtered from the target 5 can be prevented from being deposited on the surface S1 by inclining the surface S1.
- the surface FS of the fixing portion 13 on the processing space 12 side is such that the distance D3 between the surface FS and the backing plate 7 is inside the opening OP of the shield 14 (that is, from the outer peripheral portion of the fixing portion 13 to the central portion). It is preferable to include a portion (hereinafter referred to as a second inclined portion) that is inclined so as to become smaller as it goes. Further, the surface S2 opposite to the inner surface S1 of the shield 14, that is, the surface S2 on the fixing portion 13 side, is such that the distance D2 between the surface S2 and the backing plate 7 decreases from the outer portion 142 toward the facing portion 141. It is preferable to include a portion that is inclined (hereinafter, referred to as a third inclined portion).
- the second inclined portion is provided on the fixed portion 13 and the third inclined portion is provided on the surface S2 of the shield 14 facing the fixed portion 13, so that the facing portion 141 of the shield 14 can be made more like the backing plate 7 or the flange portion FL of the target 5. Can be approached.
- the facing portion 141 can be made closer to the outer magnet 8a, and the magnetic lines of force from the outer magnet 8a can easily flow into the shield 14.
- the surface S ⁇ b> 2 can be arranged along the magnetic field formed by the magnetron unit 8. For this reason, it is possible to suppress the magnetic lines once entering the shield 14 from leaking into the gap SP.
- the facing portion 141 that is the tip of the shield 14 is positioned in the center direction of the target 5 with respect to the fixed portion 13. This is because magnetic lines of force that do not flow into the inner magnet 8b out of the magnetic lines that flow out of the outer magnet 8a efficiently flow into the shield 14. As a result, it is possible to further reduce the lines of magnetic force entering the gap SP.
- the fixed portion 13 by configuring the fixed portion 13 from a magnetic material, magnetic lines of force that do not flow into the inner magnet 8b out of the magnetic lines flowing out of the outer magnet 8a flow to the shield 14 and the fixed portion 13. As a result, the spread of the magnetic field in the vicinity of the target can be suppressed, the magnetic lines of force can be concentrated in the upper direction of the target, and the plasma density in the vicinity of the target can be improved.
- the fixed portion 13 and the facing portion 141 of the shield 14 are provided so as not to face the magnetron unit 8 in a direction perpendicular to the target mounting surface of the backing plate 7. According to such a structure, while maintaining the shape of the magnetic tunnel formed by the outer magnet 8a and the inner magnet 8b in a good manner, the magnetic force lines that do not flow into the inner magnet 8b out of the magnetic force lines that flow out of the outer magnet 8a are efficiently generated. The lines of magnetic force that flow into the shield 14 and the fixed portion 13 and enter the gap SP can be reduced.
- the shield 14 and the fixing portion 13 are made of a magnetic material.
- the present invention is not limited to this, and the shield 14 and the fixing portion 13 are made of a combination of a nonmagnetic member and a magnetic member. May be.
- the side facing the processing space of the shield 14, that is, the side facing the substrate holding portion 4 is made of a nonmagnetic member
- the side facing the fixing portion 13 is made of a magnetic member, and these members are combined.
- the shield 14 may be formed.
- the side of the shield 14 facing the processing space that is, the side facing the substrate holding portion 4 and the side facing the fixing portion 13 are made of a nonmagnetic member, and a magnetic member is provided between them to shield the shield. 14 may be formed.
- the fixing portion 13 the side facing the shield 14 may be made of a nonmagnetic member
- the side facing the backing plate 7 may be made of a magnetic member.
- the shield 14 is preferably formed by coating a magnetic base material with a nonmagnetic metal film. It is desirable to coat at least a region facing the processing space of the shield 14, that is, a region facing the substrate holding unit 4.
- the coating of the metal film can be formed by spraying Al or the like. According to such a configuration, when the shield 14 is cleaned, the deposited film attached to the shield 14 is peeled off together with the coating film, thereby easily cleaning the substrate while preventing damage to the base material. .
- the fixing portion 13 may be formed by coating a magnetic base material with a metal film.
- the gist of the present invention is that the magnetron unit 8, the shield 14 including a magnetic material, and the fixed portion 13 including the magnetic material are magnetically coupled, and the shield is compared to the case where the fixed portion 13 is nonmagnetic.
- the purpose of this is to reduce the lines of magnetic force passing through the gap SP between the fixed portion 13 and the fixed portion 13.
- the problem of discharge in the gap SP due to the lines of magnetic force passing through the gap SP becomes prominent in high-density ionization sputtering using a high frequency. Therefore, the present invention is particularly effective for magnetron sputtering using a high frequency.
- the target 5 may be bonded to the backing plate 7 without using the fixing portion 13, and a magnetic member may be provided around the target 5 instead. Also in this case, similarly to the fixed portion 13 that is a magnetic member, it is possible to reduce the lines of magnetic force passing through the gap SP.
- the target 5 for example, a pure metal (for example, titanium), or a target material such as an alloy (for example, an alloy of aluminum and copper), a magnetic body (for example, Co), or a dielectric (for example, SiO 2) can be used.
- the target 5 is fixed to the backing plate 7 by the fixing portion 13 so that the contact surface thereof contacts the contact surface of the backing plate 7.
- the backing plate 7 can be made of a material having good thermal conductivity such as oxygen-free copper.
- the outer diameter of the flange portion FL is 180 mm
- the thickness of the flange portion FL is 3 mm
- the outer diameter of the main body portion (sputtered portion) MB is 160 mm
- the thickness of the main body portion MB is 14 mm. sell.
- the fixing unit 13 is made of, for example, SUS440C.
- the second inclined portion and the contact surface of the backing plate 7 on the surface FS of the fixing portion 13 on the processing space 12 side (typically, the contact surface of the target 5 and the first surface 51 of the flange portion FL of the target 5).
- the angle A (see FIG. 4) between the plane parallel to the second plane 52 and the plane parallel to the second plane 52 is preferably, for example, an angle of 20 degrees to 60 degrees, and may be, for example, 30 degrees.
- the shield 14 is made of, for example, SUS440C.
- the first inclined portion in the inner surface S1 that is configured by the shield 14 and faces the processing space 12 of the fixed portion 13 and the third inclined portion in the opposite surface S2 are, for example, surfaces on the processing space 12 side of the fixed portion 13. It may be parallel to the second inclined portion in the FS. For example, an interval of 1 mm to 2 mm may be provided between the fixed portion 13 and the shield 14 so as to prevent arc discharge and prevent generation of plasma.
- the thickness of the facing portion 141 and the outer portion 142 of the shield 14 is preferably 6 mm or more, for example.
- the gap between the surface of the facing portion 141 closest to the flange portion FL and the flange portion FL can be, for example, 1 mm to 2 mm.
- the gap between the inner portion of the facing portion 141 of the shield 14 and the side surface of the main body MB of the target 5 can be, for example, 1 mm to 2 mm.
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Abstract
Description
スパッタを高効率に行うために、ターゲットの裏面に磁石を配置したマグネトロンスパッタが広く用いられている。このマグネトロンスパッタでは、ターゲットに電圧を印加し、ターゲット近傍に形成したプラズマを磁場によりターゲット近傍に閉じ込めることで効率的にスパッタを行う。このとき電圧が印加され、カソードとして機能するターゲットおよびバッキングプレートに対して、ターゲットの外周を囲むシールドを接地し(以下アースシールドともいう)、アノードとする構成が提案されている(特許文献1)。さらに、特許文献1では該シールドを磁性体で構成することにより、プラズマをよりターゲット近傍に閉じ込めることが記載されている。
このような問題は、プラズマ中のイオン密度が高い高周波スパッタにおいて特に顕著となる。
ターゲット5としては、例えば、純金属(例えばチタン)、又は、合金(例えばアルミニウムと銅との合金)、磁性体(例えばCo)、誘電体(例えばSiO2)などのターゲット材を使用することができる。ターゲット5は、そのコンタクト面がバッキングプレート7のコンタクト面に接触するように固定部13によってバッキングプレート7に固定される。バッキングプレート7は、例えば、無酸素銅などの熱伝導性が良い材料で構成されうる。ターゲット5は、例えば、鍔部FLの外径が180mm、鍔部FLの厚さが3mmであり、本体部(被スパッタ部)MBの外径が160mm、本体部MBの厚さが14mmでありうる。
Claims (5)
- 基板を保持するための基板保持部と、
ターゲットを保持するためのターゲット取り付け面を有するバッキングプレートと、
前記バッキングプレートに接続された電源と、
前記バッキングプレートの前記ターゲット取り付け面とは反対側に配置された磁石と、
前記ターゲット取り付け面の周囲を囲んでおり、接地されている、磁性材を含むシールドと、
前記ターゲット取り付け面の外周において前記バッキングプレートと前記シールドの間に位置しており、且つ前記ターゲット取り付け面に垂直な方向において前記磁石と対向しない位置に設けられている磁性部材と、
を備えることを特徴とするスパッタリング装置。 - 前記磁性部材は、前記ターゲットを前記バッキングプレートに固定可能に構成され、
前記シールドは、前記磁性部材を介することなく前記バッキングプレートに対面する対面部と、前記対面部の外側の外側部とを有し、
前記対面部と前記バッキングプレートとの間隔は、前記外側部と前記バッキングプレートとの間隔より小さく、
前記シールドの前記基板保持部の側の内面は、前記内面と前記バッキングプレートとの間の距離が前記外側部から前記対面部に向かうに従って小さくなるように傾斜した第1傾斜部を含む、
ことを特徴とする請求項1に記載のスパッタリング装置。 - 前記磁性部材の前記基板保持部の側の面は、当該面と前記バッキングプレートとの距離が前記磁性部材の外周部から中心部に向かうに従って小さくなるように傾斜した第2傾斜部を含み、
前記シールドの前記内面とは反対側の面は、当該面と前記バッキングプレートとの距離が前記外側部から前記対面部に向かうに従って小さくなるように傾斜した第3傾斜部を含む、
ことを特徴とする請求項2に記載のスパッタリング装置。 - 前記電源は高周波電源であることを特徴とする請求項1乃至3のいずれか1項に記載のスパッタリング装置。
- 前記磁石はヨーク上に設けられ、
前記磁石は、前記ターゲット取り付け面に対して垂直方向に磁化した環状の外側磁石と、前記外側磁石の内側に位置しており、前記外側磁石とは反対方向に磁化した内側磁石と、を有することを特徴とする請求項1乃至4のいずれか1項に記載のスパッタリング装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015502583A JP5934427B2 (ja) | 2013-02-28 | 2013-11-19 | スパッタリング装置 |
GB1510085.2A GB2522600B (en) | 2013-02-28 | 2013-11-19 | Sputtering Apparatus |
CN201380071644.3A CN104968829B (zh) | 2013-02-28 | 2013-11-19 | 溅射设备 |
DE112013006746.3T DE112013006746B4 (de) | 2013-02-28 | 2013-11-19 | Sputtergerät |
US14/751,595 US9368331B2 (en) | 2013-02-28 | 2015-06-26 | Sputtering apparatus |
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Application Number | Priority Date | Filing Date | Title |
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JP2013039310 | 2013-02-28 | ||
JP2013-039310 | 2013-02-28 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US14/751,595 Continuation US9368331B2 (en) | 2013-02-28 | 2015-06-26 | Sputtering apparatus |
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WO2014132308A1 true WO2014132308A1 (ja) | 2014-09-04 |
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Application Number | Title | Priority Date | Filing Date |
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PCT/JP2013/006789 WO2014132308A1 (ja) | 2013-02-28 | 2013-11-19 | スパッタリング装置 |
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US (1) | US9368331B2 (ja) |
JP (1) | JP5934427B2 (ja) |
CN (1) | CN104968829B (ja) |
DE (1) | DE112013006746B4 (ja) |
GB (1) | GB2522600B (ja) |
TW (1) | TWI509097B (ja) |
WO (1) | WO2014132308A1 (ja) |
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TWI741165B (zh) * | 2017-03-31 | 2021-10-01 | 南韓商Ulvac 韓國股份有限公司 | 磁鐵結構體、磁鐵單元及包括此的磁控管濺射裝置 |
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TWI579880B (zh) * | 2015-05-29 | 2017-04-21 | 國立臺灣科技大學 | 陽極層離子源與陽極層離子源離子束濺鍍模組 |
US11043364B2 (en) | 2017-06-05 | 2021-06-22 | Applied Materials, Inc. | Process kit for multi-cathode processing chamber |
Citations (4)
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Also Published As
Publication number | Publication date |
---|---|
GB2522600A (en) | 2015-07-29 |
DE112013006746B4 (de) | 2019-03-21 |
TW201447005A (zh) | 2014-12-16 |
US9368331B2 (en) | 2016-06-14 |
GB2522600B (en) | 2018-07-11 |
CN104968829B (zh) | 2017-05-10 |
US20150303042A1 (en) | 2015-10-22 |
JP5934427B2 (ja) | 2016-06-15 |
TWI509097B (zh) | 2015-11-21 |
CN104968829A (zh) | 2015-10-07 |
JPWO2014132308A1 (ja) | 2017-02-02 |
DE112013006746T5 (de) | 2015-11-12 |
GB201510085D0 (en) | 2015-07-22 |
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