WO2018135221A1 - Dispositif à semiconducteur de puissance et son procédé de fabrication - Google Patents

Dispositif à semiconducteur de puissance et son procédé de fabrication Download PDF

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Publication number
WO2018135221A1
WO2018135221A1 PCT/JP2017/045675 JP2017045675W WO2018135221A1 WO 2018135221 A1 WO2018135221 A1 WO 2018135221A1 JP 2017045675 W JP2017045675 W JP 2017045675W WO 2018135221 A1 WO2018135221 A1 WO 2018135221A1
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WO
WIPO (PCT)
Prior art keywords
insulating sheet
power semiconductor
circuit body
semiconductor device
cooling body
Prior art date
Application number
PCT/JP2017/045675
Other languages
English (en)
Japanese (ja)
Inventor
順平 楠川
円丈 露野
健 徳山
晃 松下
佐藤　俊也
Original Assignee
日立オートモティブシステムズ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日立オートモティブシステムズ株式会社 filed Critical 日立オートモティブシステムズ株式会社
Publication of WO2018135221A1 publication Critical patent/WO2018135221A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present invention relates to a power semiconductor device and a manufacturing method thereof, and more particularly, to a power semiconductor device used in an in-vehicle power conversion device and a manufacturing method thereof.
  • EV electric vehicle
  • HEV hybrid car
  • a pseudo AC voltage is created by switching the DC voltage of the battery and the power semiconductor element, and the motor can be driven with high efficiency.
  • this power semiconductor element Since this power semiconductor element generates heat when energized, high heat dissipation is required.
  • a metal cooling body having fins is used for heat radiation, and grounded to ground (GND) for the purpose of stabilizing the potential and preventing electric shock.
  • GND ground
  • an insulating member is required between the power semiconductor element and the cooling body, and the insulating member is required to have excellent thermal conductivity and high insulation reliability.
  • an insulating layer is disposed between a circuit body incorporating a semiconductor element and the heat radiating body, and heat generated by the semiconductor element is radiated through the insulating layer.
  • the power semiconductor device described in Patent Document 1 has an insulating sheet disposed between a circuit body incorporating a power semiconductor element and a cooling body, thereby providing thermal conductivity and insulation between the power semiconductor element and the cooling body. Have. Moreover, the separation of the cooling body and the circuit body is suppressed by devising the structure of the metal case member including the cooling body.
  • an object of the present invention is to improve the adhesion and adhesion between the insulating sheet and the covering material, suppress the separation between the insulating sheet and the covering material, and improve the insulation reliability.
  • a circuit body having a power semiconductor element, a cooling body facing the circuit body, and a space between the circuit body and the cooling body are arranged.
  • the insulation reliability of the power semiconductor device can be improved.
  • FIG. 3 is an enlarged cross-sectional view showing a state where an insulating sheet 110A is peeled off from a cooling body 108A and a state where an insulating sheet 108B is peeled off from a circuit body 150 in FIG.
  • FIG. 3 is an internal plan view focusing on portions of an insulating sheet 110A and an insulating sheet 110B of the power semiconductor device 100.
  • FIG. 5 is an enlarged cross-sectional view of a portion B of the power semiconductor device 100 of the present example of FIG. 4.
  • 2 is a cross-sectional structure diagram of a circuit body 150 of a power semiconductor device 100.
  • FIG. It is a figure which shows the result of having implemented the temperature cycle test with respect to the Example and the comparative example, and measuring the partial discharge start voltage of the power semiconductor device for every predetermined cycle.
  • FIG. 1 is a cross-sectional structure diagram of a power semiconductor device 100 as a comparative example.
  • FIG. 2 is an enlarged cross-sectional view of a dotted-line square portion in FIG. 3 is an enlarged cross-sectional view illustrating a state where the insulating sheet 110A is peeled from the cooling body 108A and a state where the insulating sheet 110B is peeled from the circuit body 150 in FIG.
  • the insulating sheet 110A and the insulating sheet 110B are disposed between the circuit body 150, the cooling body 108A, and the cooling body 108B.
  • the insulating sheet 110A and the circuit body 150 are substantially equal, or the insulating sheet 110A has a side formed larger than the circuit body 150. It was.
  • a coating material (for example, potting resin) is formed on the outer surface of the insulating sheet 110A that is perpendicular to the contact surface of the insulating sheet 110A with the circuit body 150 and the contact surface of the insulating sheet 110A with the cooling body 108A.
  • the outer shape of the insulating sheet 110A is cut from an insulating sheet having a size larger than that required for the power semiconductor device 100 to an insulating sheet having a size necessary for the power semiconductor device, the outer shape of the insulating sheet is In general, it has a straight shape with no irregularities.
  • the separation is caused by the insulation sheets 110A and 110B and the circuit body 150, and the insulating sheets 110A and 110B and the cooling bodies 108A and 108B. There is a possibility of spreading to the separation (121 and 122 in FIG. 3).
  • the insulating sheets 110A and 110B are formed to be thin in order to improve heat dissipation. However, the insulating sheets 110A and 110B play a role of insulation between the circuit body 150 and the cooling bodies 108A and 108B, and the insulation sheets 110A and 110B and the circuit body 150 are insulated. When the sheets 110A and 110B are separated from the cooling bodies 108A and 108B, partial discharge may be generated in the separated spaces.
  • the insulating sheets 110A and 110B when viewed from the direction perpendicular to the contact surface between the circuit body 150 and the insulating sheets 110A and 110B, the insulating sheets 110A and 110B have sides formed smaller than the circuit body 150 and the cooling bodies 108A and 108B. And the sides of the insulating sheets 110 ⁇ / b> A and 110 ⁇ / b> B are formed in a concavo-convex shape so that the covering material 111 is bitten.
  • FIG. 4 is a cross-sectional structure diagram of the power semiconductor device 100 of the present embodiment.
  • FIG. 5 is an internal plan view focusing on the insulating sheet 110 ⁇ / b> A and the insulating sheet 110 ⁇ / b> B of the power semiconductor device 100.
  • FIG. 6 is a diagram for explaining a mechanism for forming a concavo-convex shape on the outer shape of the insulating sheet 110A and the insulating sheet 110B, and shows a state before the insulating sheet 110A and the insulating sheet 110B are pressed.
  • FIG. 5 is an internal plan view focusing on the insulating sheet 110 ⁇ / b> A and the insulating sheet 110 ⁇ / b> B of the power semiconductor device 100.
  • FIG. 6 is a diagram for explaining a mechanism for forming a concavo-convex shape on the outer shape of the insulating sheet 110A and the insulating sheet 110B, and shows a state before the insulating sheet 110A and the
  • FIG. 7 is a diagram for explaining a mechanism for forming a concavo-convex pattern on the outer shape of the insulating sheet 110A and the insulating sheet 110B, and shows a state after the insulating sheet 110A and the insulating sheet 110B are pressed.
  • FIG. 8 is an enlarged cross-sectional view of part B of the power semiconductor device 100 of this embodiment shown in FIG.
  • FIG. 9 is a cross-sectional structure diagram of the circuit body 150 of the power semiconductor device 100.
  • the power semiconductor element 101 is fixed to the conductor plate 102A and the conductor plate 102B via the bonding material 103A and the bonding material 103B.
  • the conductor plate 102A and the conductor plate 102B are made of, for example, copper, copper alloy, aluminum, aluminum alloy, or the like.
  • Solder is mainly used for the bonding material 103A and the bonding material 103B, but a conductive paste in which metal powder such as silver is dispersed in resin is also used.
  • IGBTs and diodes as the power semiconductor element 101, and Si devices are mainly used at present, but devices such as SiC can be used.
  • the power semiconductor element 101, the conductor plate 102A, and the conductor plate 102B are sealed by a technique such as transfer molding using the sealing resin 106, and the circuit body 150 is completed.
  • the sealing resin 106 a resin mainly composed of an epoxy resin is usually used.
  • fillers such as silica and alumina are dispersed in the resin to adjust the thermal expansion coefficient. Is used.
  • a part of the input / output terminal 104 protrudes from the sealing resin 106.
  • the case 109 includes a cooling body 108 ⁇ / b> A and a cooling body 108 ⁇ / b> B in which heat dissipating fins 107 are formed on the outer periphery, a side wall portion, and a seal portion that forms an insertion port for inserting the circuit body 150.
  • the circuit body 150 is inserted in a state where the insulating sheet 110A and the insulating sheet 110B are disposed on both surfaces of the surface of the circuit body 150 where the conductor plate 102A and the conductor plate 102B are exposed.
  • the arrangement relationship between the cooling body 108A, the cooling body 108B, the insulating sheet 110A, the insulating sheet 110B, and the circuit body 150 will be described.
  • the insulating sheet 110A and the insulating sheet 110B are more than the circuit body 150, the cooling body 108A, and the cooling body 108B. Try to have small sides.
  • the outermost broken lines 108A 'and 108B' indicate the outer peripheral shapes of the cooling bodies 108A and 108B.
  • a solid line 150A indicates the outer peripheral shape of the contact surface of the circuit body 150 with the insulating sheet 110A or the insulating sheet 110B.
  • the inner peripheral broken lines 110A 'and 110B' indicate the outer peripheral shape of the insulating sheet 110A or the insulating sheet 110B before being pressed by the press. Further, the dotted line on the innermost peripheral side shows a state in which the conductor plates 102A and 102B are exposed from the sealing resin 106.
  • the outer shapes 110A 'and 110B' of the insulating sheet are formed to be smaller than the contact surface 150A between the inner wall surface shapes 108A 'and 108B' of the cooling body and the insulating sheet of the circuit body 150.
  • outer peripheral shape 110A ′ of the insulating sheet 110A before being pressed by the press and the outer peripheral shape 110B ′ of the insulating sheet 110B before being pressed by the press are formed to be larger than the outer shapes of the conductor plates 102A and 102B.
  • the circuit body 150, the insulating sheet 110A, and the insulating sheet 110B are arranged at the predetermined positions in the case 109, they are set in a vacuum press machine, and the radiating fin 107 side of the cooling bodies 108A and 108B is pressed at a high temperature. To do.
  • the cooling body 108A and the insulating sheet 110A between the insulating sheet 110A and the circuit body 150, between the cooling body 108B and the insulating sheet 110B, and between the insulating sheet 110B and the circuit body 150.
  • the concavo-convex shapes 110A ′′ and 110B ′′ as shown in FIG. 5 are formed on the outer shape of the insulating sheet 110A or the insulating sheet 110B.
  • FIG. 6 and 7 are schematic views of the surface of the insulating sheet 110 (insulating sheet 110A or 110B) viewed from the pressing direction of the cooling body 108A or the cooling body 108B.
  • FIG. 6 shows a state before pressing
  • FIG. 7 shows a state after pressing.
  • the lower side of the drawing shows the outer peripheral shape of the insulating sheet 110.
  • the insulating sheet 110 is composed of a resin 132 in which inorganic fillers 131 having different particle sizes are dispersedly contained.
  • the inorganic filler 131 is preferably one having good thermal conductivity in order to dissipate the heat generated by the power semiconductor element 101 to the cooling bodies 108A and 108B.
  • boron nitride (BN), aluminum nitride (AlN), aluminum oxide (Al 2 O 3 ) or the like can be used.
  • the outer peripheral shapes 110A ′ and 110B ′ of the insulating sheet 110 are formed smaller than the contact surface between the inner wall surface of the cooling body 108A or the cooling body 108B and the insulating sheet 110 of the circuit body 150, the outer peripheral shape 110A of the insulating sheet 110.
  • a force (this force is referred to as a scavenging force) is applied to the resin 132 in a state where the pressure is also applied to “and 110B” and the viscosity is lowered, in order to flow in the outer direction of the insulating sheet 110.
  • This scavenging force can be controlled by the viscosity of the resin 132 of the insulating sheet 110 and the pressing pressure. The lower the viscosity and the higher the pressure, the larger the scavenging force.
  • the resistance force acts on the inorganic filler 131 dispersed in the resin 132 against the scavenging force, and this resistance force is proportional to the particle size and weight of the filler 131, and the resistance force increases as the inorganic filler 131 increases.
  • the force obtained by subtracting the resistance force from the scavenging force becomes the force through which the resin 132 flows in the outer direction of the insulating sheet 110.
  • FIG. 7 shows the state of the insulating sheet 110 after being pressed.
  • the portion where the resin 132 and the small inorganic filler 131 are distributed is pushed out in the outer direction, and the portion where the large inorganic filler 131 is distributed is not pushed out.
  • an uneven shape is formed in the outer shape of the insulating sheet 110. Can be made.
  • the insulating sheet 110 preferably contains a filler having a particle size of 10 ⁇ m or more.
  • the integrated circuit body 150, the insulating sheet 110, and the case 109 are taken out from the press machine, and the opening portion on the terminal side of the case 109 is taken out. Then, a covering material 111 (potting resin) is poured into the interior space of the case 109 to fill and form the covering material 111.
  • potting resin potting resin
  • FIG. 9 is a cross-sectional view of part B of the power semiconductor device of this embodiment shown in FIG. As shown in FIG. 8, the covering material 111 is formed so as to be bitten into the outer shape of the insulating sheet 110 pressed with the resin 132 or the small inorganic filler 131.
  • the power semiconductor device 100 is completed by placing it in a high-temperature bath and curing the covering material 111 under predetermined conditions.
  • the separation between the outer shape of the insulating sheet 110 and the covering material 111 advances to the separation between the insulating sheet 110 and the cooling body 108A or 108B, or the separation between the insulating sheet 110 and the circuit body 150, and a high voltage is applied to the separation portion. Then, a phenomenon called partial discharge occurs.
  • FIG. 10 shows an example and a comparative example.
  • the temperature cycle test is implemented, and the result of measuring the partial discharge start voltage of the power semiconductor device every predetermined cycle is shown.
  • the horizontal axis represents the number of temperature cycles
  • the vertical axis represents the partial discharge start voltage at each temperature cycle.
  • the partial discharge start voltage decreased to 2.3 kVrms after 2000 temperature cycles.
  • the partial discharge start voltage decreased with the progress of the test cycle.
  • the decrease in the partial discharge start voltage is caused by the interface between the outer portion of the insulating sheet 110 and the covering material 111 being separated from each other, and starting from that portion, the cooling body 108A or 108B and the insulating sheet 110 are separated from each other. This is because the electric field is concentrated and partial discharge occurs.
  • the outer shape portion of the insulating sheet 110 was a linear shape, and the adhesion (adhesion) strength of the covering material was weak, and therefore separation occurred.
  • DESCRIPTION OF SYMBOLS 100 Power semiconductor device, 101 ... Power semiconductor element, 102A ... Conductor plate, 102B ... Conductor plate, 103A ... Bonding material, 103B ... Bonding material, 104 ... Input / output terminal, 104A ... AC output terminal, 104B ... DC input terminal, 104C ... Control terminal, 105 ... Metal thin wire, 106 ... Sealing resin, 107 ... Heat radiating fin, 108A ... Cooling body, 108A '... Outer peripheral shape of cooling body 108A, 108B' ... Outer peripheral shape of cooling body 108B, 108B ...

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

La présente invention aborde le problème d'amélioration de la force de collage ou de la force d'adhérence entre une feuille isolante et un matériau de revêtement, empêchant la séparation de la feuille isolante et du matériau de revêtement, et améliorant la fiabilité d'isolation. Un dispositif à semiconducteur de puissance de la présente invention comprend : un corps de circuit ayant un élément semiconducteur de puissance; un corps de refroidissement opposé au corps de circuit; une feuille isolante qui est disposée dans un espace entre le corps de circuit et le corps de refroidissement et qui contient une charge inorganique; et un matériau de revêtement en contact avec le corps de circuit, le corps de refroidissement et la feuille isolante. Vu depuis une direction perpendiculaire à une surface de contact entre le corps de circuit et la feuille isolante, la feuille isolante a un côté formé plus petit que le corps de circuit et le corps de refroidissement, le côté de la feuille isolante étant formé sous une forme irrégulière de telle sorte que le matériau de revêtement peut être incorporé à l'intérieur de celui-ci.
PCT/JP2017/045675 2017-01-19 2017-12-20 Dispositif à semiconducteur de puissance et son procédé de fabrication WO2018135221A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017007163A JP6815207B2 (ja) 2017-01-19 2017-01-19 パワー半導体装置及びその製造方法
JP2017-007163 2017-01-19

Publications (1)

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WO2018135221A1 true WO2018135221A1 (fr) 2018-07-26

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014123644A (ja) * 2012-12-21 2014-07-03 Mitsubishi Electric Corp 電力用半導体装置
WO2017110614A1 (fr) * 2015-12-25 2017-06-29 三菱電機株式会社 Dispositif à semi-conducteur et son procédé de fabrication
JP2017135310A (ja) * 2016-01-29 2017-08-03 サンケン電気株式会社 半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4904104B2 (ja) * 2006-07-19 2012-03-28 三菱電機株式会社 半導体装置
JP5953152B2 (ja) * 2012-07-20 2016-07-20 日立オートモティブシステムズ株式会社 パワー半導体モジュール及びそれを用いた電力変換装置
JP6286320B2 (ja) * 2014-08-07 2018-02-28 日立オートモティブシステムズ株式会社 パワーモジュール

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014123644A (ja) * 2012-12-21 2014-07-03 Mitsubishi Electric Corp 電力用半導体装置
WO2017110614A1 (fr) * 2015-12-25 2017-06-29 三菱電機株式会社 Dispositif à semi-conducteur et son procédé de fabrication
JP2017135310A (ja) * 2016-01-29 2017-08-03 サンケン電気株式会社 半導体装置

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JP2018117055A (ja) 2018-07-26

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