JP2018117055A - パワー半導体装置及びその製造方法 - Google Patents
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/4805—Shape
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- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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Abstract
Description
実施例と図1に示した比較例のパワー半導体装置とを比較することにより本実施形態の効果を検証した。具体的には、パワー半導体装置100の温度サイクル試験(ΔT=165度)を実施し、所定サイクル毎の部分放電試験を実施することで評価した。
Claims (4)
- パワー半導体素子を有する回路体と、
前記回路体と対向する冷却体と、
前記回路体と前記冷却体の間の空間に配置されかつ無機フィラーを含有する絶縁シートと、
前記回路体と前記冷却体と前記絶縁シートに接する被覆材と、を備え、
前記回路体と前記絶縁シートとの接触面の直角方向から見た場合、前記絶縁シートは前記回路体と前記冷却体よりも小さく形成された辺を有し、
前記絶縁シートの前記辺は、前記被覆材が噛み込まれるような凹凸型に形成されるパワー半導体装置。 - 請求項1に記載のパワー半導体装置において、
前記回路体と前記絶縁シートとの接触面の直角方向から見た場合、前記絶縁シートは前記回路体の導体板よりも大きく形成された辺を有しているパワー半導体装置。 - 請求項1または2に記載のパワー半導体装置において、
前記絶縁シートは、樹脂中に無機フィラーを分散含有させたものであり、少なくとも粒径が10μmよりも大きいフィラーを含有するパワー半導体装置。 - パワー半導体素子を有する回路体と冷却体により絶縁シートを挟む第1工程と、
未硬化状態の前記絶縁シートに熱を加えて当該絶縁シートを構成する樹脂の粘度を低下させた状態で、前記回路体又は前記冷却体を加圧することで、当該樹脂を流し出すことで前記絶縁シートの辺に凹凸型を形成する第2工程と、
前記前記絶縁シートの前記凹凸型に被覆材を充填する第3工程と、を備えるパワー半導体装置の製造方法。
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JP2017007163A JP6815207B2 (ja) | 2017-01-19 | 2017-01-19 | パワー半導体装置及びその製造方法 |
PCT/JP2017/045675 WO2018135221A1 (ja) | 2017-01-19 | 2017-12-20 | パワー半導体装置及びその製造方法 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008028006A (ja) * | 2006-07-19 | 2008-02-07 | Mitsubishi Electric Corp | 半導体装置 |
JP2014023327A (ja) * | 2012-07-20 | 2014-02-03 | Hitachi Automotive Systems Ltd | パワー半導体モジュール及びそれを用いた電力変換装置 |
JP2014123644A (ja) * | 2012-12-21 | 2014-07-03 | Mitsubishi Electric Corp | 電力用半導体装置 |
JP2016039224A (ja) * | 2014-08-07 | 2016-03-22 | 日立オートモティブシステムズ株式会社 | パワーモジュール |
Family Cites Families (2)
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JP6279162B2 (ja) * | 2015-12-25 | 2018-02-14 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP2017135310A (ja) * | 2016-01-29 | 2017-08-03 | サンケン電気株式会社 | 半導体装置 |
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- 2017-12-20 WO PCT/JP2017/045675 patent/WO2018135221A1/ja active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2008028006A (ja) * | 2006-07-19 | 2008-02-07 | Mitsubishi Electric Corp | 半導体装置 |
JP2014023327A (ja) * | 2012-07-20 | 2014-02-03 | Hitachi Automotive Systems Ltd | パワー半導体モジュール及びそれを用いた電力変換装置 |
JP2014123644A (ja) * | 2012-12-21 | 2014-07-03 | Mitsubishi Electric Corp | 電力用半導体装置 |
JP2016039224A (ja) * | 2014-08-07 | 2016-03-22 | 日立オートモティブシステムズ株式会社 | パワーモジュール |
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WO2018135221A1 (ja) | 2018-07-26 |
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