WO2018116779A1 - ガラス基板の製造装置及び製造方法 - Google Patents

ガラス基板の製造装置及び製造方法 Download PDF

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Publication number
WO2018116779A1
WO2018116779A1 PCT/JP2017/043024 JP2017043024W WO2018116779A1 WO 2018116779 A1 WO2018116779 A1 WO 2018116779A1 JP 2017043024 W JP2017043024 W JP 2017043024W WO 2018116779 A1 WO2018116779 A1 WO 2018116779A1
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WIPO (PCT)
Prior art keywords
gas
path
processing gas
air supply
glass substrate
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PCT/JP2017/043024
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English (en)
French (fr)
Japanese (ja)
Inventor
好晴 山本
弘樹 中塚
大野　和宏
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日本電気硝子株式会社
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Application filed by 日本電気硝子株式会社 filed Critical 日本電気硝子株式会社
Priority to CN201780079164.XA priority Critical patent/CN110088055B/zh
Priority to KR1020197019872A priority patent/KR102414501B1/ko
Publication of WO2018116779A1 publication Critical patent/WO2018116779A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources

Definitions

  • the present invention relates to a glass substrate manufacturing apparatus and manufacturing method, and more particularly to a technique for performing a surface treatment with a processing gas on the surface of a glass sheet serving as a glass substrate.
  • liquid crystal displays LCD
  • plasma displays PDP
  • field emission displays FED
  • organic EL displays OLED
  • disconnects the plate-shaped glass (band-shaped plate glass) shape
  • the glass as an insulator has a property of being easily charged, and in the glass substrate manufacturing process, for example, when a glass substrate is placed on a mounting table and subjected to predetermined processing, the glass substrate and the mounting table
  • the glass substrate may be charged by contact peeling (this may be referred to as peeling charging).
  • peeling charging When a conductive object approaches the charged glass substrate, a discharge occurs, and this discharge causes damage to various elements formed on the main surface of the glass substrate and the electrode wires constituting the electronic circuit, or to the glass substrate itself.
  • the charged glass substrate is likely to stick to the mounting table, and there is a possibility that the glass substrate may be damaged by forcibly peeling it off. Since these naturally cause display defects, they should be avoided as much as possible.
  • a roughening method is conceivable.
  • the back surface of the glass substrate is roughened and, for example, the surface roughness of the back surface is mounted.
  • the glass substrate can be made difficult to stick to the mounting surface. Thereby, it is expected that the glass substrate can be prevented from being damaged during peeling.
  • a conveying means that conveys a glass substrate in a predetermined direction and a processing gas containing hydrogen fluoride gas are provided.
  • a surface treatment apparatus that includes an injector that supplies the processing gas supplied toward the back surface of the glass substrate on the conveyance path and discharges the supplied processing gas to an exhaust system.
  • the injector is provided with a first slit connected to the hydrogen fluoride gas source at a predetermined position in the transport direction of the glass substrate, and a second slit connected to the carrier gas source is the first slit. It is provided at a predetermined position on both sides in the transport direction.
  • a third slit connected to the exhaust system is provided at a predetermined position on both sides of the second slit in the transport direction.
  • Patent Document 1 when a structure in which the hydrogen fluoride gas source and the first slit are connected via a predetermined air supply system is employed, even if the hydrogen fluoride gas source is a hydrogen fluoride gas source Even if the production and supply of the gas are stopped, hydrogen fluoride gas remains in the air supply system. Therefore, a long time is required until the hydrogen fluoride gas remaining in the air supply system is completely discharged, and the waiting time for maintenance increases. This may cause a significant decrease in productivity.
  • this manufacturing apparatus is provided with a surface treatment apparatus for supplying a treatment gas to one main surface of a sheet glass serving as a glass substrate and performing a predetermined surface treatment.
  • a processing gas generating device for generating a processing gas, an air supply passage for supplying the processing gas to one main surface, a detoxifying device for performing a detoxifying process on the processing gas, and a processing gas supplied to the one main surface
  • an exhaust passage for introducing a harmless gas into the detoxifying device, and a harmless gas introduction passage that enables the introduction of harmless gas into the supply passage is characterized by joining the supply passage.
  • Non-hazardous gas as used herein is a gas that is generally recognized to be harmful to the human body (gas containing harmful substances regulated by the Air Pollution Law, harmful gases). It is a gas excluding the gas, which is recognized as being substantially harmless even if it is in contact with the human body or inhaled directly or mixed with the atmosphere.
  • the harmless gas introduction path that introduces the harmless gas into the supply path is joined to the supply path, so that the downstream of the supply path from the merging position of the harmless gas introduction path and the supply path.
  • either harmless gas or processing gas can be introduced.
  • the harmless gas can be introduced into the air supply path without passing through the processing gas generation device.
  • the flow rate of the harmless gas may be limited.
  • the introduction condition ( The flow rate, pressure, temperature, etc. of the harmless gas can be set relatively freely. Therefore, for example, by setting a larger flow rate, it is possible to replace the processing gas with a harmless gas in a short time.
  • the glass substrate manufacturing apparatus includes a first on-off valve capable of opening and closing a harmless gas introduction path, and a second on-off valve capable of opening and closing the air supply path upstream of the merging position. May be further provided. Alternatively, it is provided at the merging position and can switch between the flow of processing gas from the upstream side of the merging position to the downstream side of the air supply path and the flow of harmless gas from the harmless gas introduction path to the downstream side of the merging position. It may further include a three-way valve.
  • first on-off valve and the second on-off valve are provided in this way, it is possible to easily introduce either harmless gas or processing gas to the downstream side of the air supply path from the merging position. If the three-way valve is provided at the joining position, harmless gas or processing gas can be introduced more easily on the downstream side of the air supply path than the joining position.
  • the glass substrate manufacturing apparatus may further include a processing gas branch path that branches off upstream of the air supply path from the merging position and introduces the processing gas into the exhaust path.
  • a processing gas branch path that branches off upstream of the air supply path from the merging position and introduces the processing gas into the exhaust path.
  • a third opening / closing valve for opening / closing the processing gas branch passage may be further provided.
  • a processing gas branch path is provided so that the processing gas can be introduced into the processing gas branch path (when the second on-off valve is provided, the above-described third on-off valve is further provided). While replacing the gas with a harmless gas, the processing gas generated by the processing gas generation device can continue to be sent to the exhaust path through the processing gas branch. Therefore, during the replacement process, it is possible to safely perform the replacement work by avoiding the occurrence of problems due to the process gas being confined between the process gas generation apparatus and the merging position in the process gas generation apparatus or in the supply path. Can be performed.
  • the glass substrate manufacturing apparatus When the third on-off valve is provided, the glass substrate manufacturing apparatus according to the present invention is disposed on the upstream side of the exhaust path from the position where the processing gas branch path joins the exhaust path, and opens and closes the exhaust path.
  • a fourth open / close valve may be further provided.
  • the on-off valve (fourth on-off valve) on the upstream side of the exhaust passage from the position where the processing gas branch passage joins the exhaust passage, the region on the downstream side of the second on-off valve in the supply passage And the glass processing space (the space exposed to the processing gas) are completely separated from the processing gas flow path (the processing gas branching path and the exhaust path downstream of the fourth on-off valve) Can be.
  • the processing gas is replaced with a harmless gas, and when the above-described supply path and the processing space of the sheet glass are completely filled with the harmless gas,
  • the fourth on-off valve By closing the fourth on-off valve, it is possible to safely disassemble the surface treatment device and perform maintenance without stopping the treatment gas generation device, except for a part of the treatment gas branching passage and the exhaust passage downstream.
  • the harmless gas may be clean dry air.
  • any gas can be used as long as it is substantially harmless to the human body, but clean dry air is preferable when comprehensively considering the influence on the sheet glass, cost, etc. is there.
  • the solution of the above-mentioned problem is also achieved by the glass substrate manufacturing method according to the present invention. That is, in this manufacturing method, a processing gas is supplied to the surface of a sheet glass to be a glass substrate to perform a predetermined surface treatment, and the surface treatment is performed while the surface treatment step is stopped. And a maintenance process for performing maintenance of the apparatus for supplying the processing gas generated by the processing gas generation device to the surface through the air supply path and being supplied to the surface in the surface treatment process. The treated gas is introduced into the abatement device through the exhaust passage to remove the treatment gas, and in the maintenance process, the supply passage is closed and the supply passage is closed from the position where the supply passage is closed. By introducing harmless gas into the air supply path on the downstream side, the processing gas passing through the air supply path is replaced with harmless gas.
  • the air supply path is closed, and a harmless gas is introduced into the air supply path downstream of the position where the air supply path is closed.
  • a harmless gas is introduced into the air supply path downstream of the position where the air supply path is closed.
  • the processing gas passing through the air supply path is replaced with a harmless gas
  • only the harmless gas can be introduced into the air supply path as in the glass substrate manufacturing apparatus according to the present invention.
  • at least the processing gas remaining in the air supply path can be replaced with a harmless gas, so that the operator can safely disassemble the surface treatment apparatus.
  • the conditions for introducing harmless gas into the air supply path (hazardous gas flow rate, pressure, temperature, etc.) can be set relatively freely. For example, by setting a larger flow rate, Replacement can be performed in a short time.
  • the glass substrate manufacturing method according to the present invention allows the processing gas to be introduced into the exhaust passage by branching from the supply passage upstream of the supply passage in the maintenance process, upstream of the supply passage. It may be a thing.
  • the processing gas can be introduced into the exhaust passage by branching from the supply passage on the upstream side of the supply passage from the position where the supply passage is closed. While the processing gas is replaced with a harmless gas, the processing gas generated by the processing gas generation device can be continuously sent to the exhaust path. Therefore, during the replacement process, avoid the occurrence of problems due to the process gas being trapped inside the process gas generator or between the supply gas path and the position where the process gas generator and the supply path are closed. It becomes possible to perform the replacement work safely.
  • the glass substrate manufacturing method according to the present invention replaces the processing gas passing through the air supply path with a harmless gas in the maintenance process, and then stops the introduction of the harmless gas into the air supply path.
  • the exhaust passage may be closed on the upstream side of the exhaust passage from the position where the processing gas is branched from the air passage and introduced into the exhaust passage.
  • each flow path by performing the opening / closing operation of each flow path, an area on the downstream side of the air supply path from the position where the air supply path is closed and a processing space of plate glass (a space exposed to the processing gas) are formed.
  • the processing gas flow path (a region downstream of the position where the exhaust path is closed among the branch path and the exhaust path of the processing gas from the air supply path) can be completely separated.
  • the exhaust gas is opened, the processing gas is replaced with a harmless gas, and when the above-described air supply channel and the processing space of the glass sheet are completely filled with the harmless gas, the exhaust gas is discharged.
  • the glass substrate manufacturing method according to the present invention opens the air supply path to introduce the processing gas into the air supply path, closes the flow path branched from the air supply path, and opens the exhaust path.
  • it may be further provided with a surface treatment resumption preparation step of replacing the harmless gas with the treatment gas.
  • the air supply passage is opened with the introduction of the harmless gas stopped as described above, the treatment gas branching passage is closed, and the exhaust passage is opened to remove the harmless gas.
  • the air supply path and the exhaust path can be filled with the processing gas again in a short time. Therefore, it is possible to omit the time until the process gas generation state is stabilized after the process gas generation is restarted, and to resume the surface treatment immediately after the maintenance.
  • the method for manufacturing a glass substrate according to the present invention stops the generation of the processing gas by the processing gas generation device in the maintenance process, and also stops the supply of the gas as the raw material of the processing gas to the processing gas generation device, The supply of the carrier gas contained in the processing gas to the processing gas generation device may be continued.
  • a processing gas generation device capable of generating a plasma reaction may be used as an apparatus for generating the hydrogen fluoride gas.
  • the processing gas generation apparatus generally includes a gas (raw material gas) such as carbon tetrafluoride gas that is a raw material of hydrogen fluoride gas, and a carrier gas such as water and nitrogen gas contained in the hydrogen fluoride gas. Is supplied. Therefore, in the maintenance process, the supply of the acidic gas is stopped and the carrier gas is continuously supplied to the processing gas generation device, so that not only the air supply path but also the processing gas inside the processing gas generation device is harmless ( Carrier gas).
  • a gas raw material gas
  • carrier gas such as water and nitrogen gas contained in the hydrogen fluoride gas
  • the treatment gas generation apparatus can be used for a long period of time. Further, by replacing the processing gas inside the processing gas generation apparatus with the carrier gas, the processing gas can be completely excluded from the inside of the processing gas generation apparatus. Thereby, even if it is a case where replacement
  • First embodiment of the present invention A first embodiment of the present invention will be described below with reference to FIGS. In the present embodiment, a case will be described as an example in which surface treatment is performed on the back surface of a glass substrate cut out to a predetermined size from a formed strip-shaped plate glass as the plate-shaped glass.
  • FIG. 1 shows a glass substrate manufacturing apparatus 10 according to the first embodiment of the present invention.
  • the manufacturing apparatus 10 includes a surface treatment apparatus 11 that performs a predetermined surface treatment on one main surface Pa (lower surface in FIG. 1) of the glass substrate P, and a treatment tank 12 that houses the surface treatment apparatus 11.
  • the surface treatment apparatus 11 is for supplying a treatment gas Ga to one main surface Pa of the glass substrate P to perform a predetermined surface treatment, and an insertion path through which the glass substrate P to be treated is inserted.
  • an air supply opening 14 that opens to the insertion passage 13
  • an exhaust opening 15 that opens to the insertion passage 13 at a position different from the air supply opening 14
  • a processing gas generation device 16 that generates processing gas Ga
  • a processing gas An air supply path 17 that connects the generating device 16 and the air supply port 14
  • a detoxification device 18 that performs a detoxification process on the processing gas Ga
  • an exhaust path 19 that connects the exhaust port 15 and the detoxification device 18, and a harmless gas
  • a harmless gas introduction path 20 for introducing Gb into the air supply path 17.
  • the surface treatment apparatus 11 further includes a processing gas branch path 21 that branches from the air supply path 17 and introduces the processing gas Ga into the exhaust path 19 in addition to the elements described above. Further, a harmless gas introduction device 22 such as a compressor is disposed on the upstream side of the harmless gas introduction path 20 so that the supply and stop of the harmless gas Gb can be operated.
  • a processing gas branch path 21 that branches from the air supply path 17 and introduces the processing gas Ga into the exhaust path 19 in addition to the elements described above.
  • a harmless gas introduction device 22 such as a compressor is disposed on the upstream side of the harmless gas introduction path 20 so that the supply and stop of the harmless gas Gb can be operated.
  • the harmless gas introduction path 20 is provided with a first on-off valve 23 that opens and closes the harmless gas introduction path 20. As a result, the introduction and stop of the harmless gas Gb into the air supply path 17 can be switched.
  • a second opening / closing valve 24 that opens and closes the air supply path 17 is disposed upstream of the merging position P1 of the harmless gas introduction path 20 in the air supply path 17. Thereby, the introduction of the processing gas Ga into the air supply path 17 and the stop thereof can be switched.
  • processing gas branch passage 21 branches from the air supply passage 17 upstream of the position where the second opening / closing valve 24 of the air supply passage 17 is disposed, and is connected to the exhaust passage 19.
  • the processing gas Ga generated by the processing gas generation device 16 can be bypassed and introduced into the exhaust passage 19 and the abatement device 18 located downstream thereof without passing through the second on-off valve 24. Yes.
  • the processing gas branch path 21 is provided with a third on-off valve 25 that opens and closes the processing gas branch path 21. Thereby, introduction and stop of the processing gas Ga into the exhaust path 19 can be switched.
  • the type and composition of the processing gas Ga is arbitrary as long as a predetermined surface treatment (for example, roughening due to corrosion) can be performed on the glass substrate P.
  • a gas containing an acidic gas such as hydrogen fluoride gas is used.
  • the processing gas generation device 16 includes a carbon tetrafluoride gas as a gas (raw material gas) Fa that is a raw material of the processing gas Ga, water as a fluid Fc that is also a raw material, and nitrogen as a carrier gas Fb. Gas is introduced (see FIG. 1). Then, by generating a plasma reaction inside the processing gas generation device 16, it is possible to generate the processing gas Ga including the hydrogen fluoride gas and the carrier gas Fb.
  • the kind and composition of the harmless gas Gb are arbitrary as long as they are substantially harmless to the human body.
  • clean dry air is preferably used from the viewpoint of cleanliness, cost, and the like.
  • air that has been treated other than clean dry air including inert gases such as nitrogen gas and argon gas (dry air) can be used, and untreated air (outside air) Can be used as they are.
  • the glass substrate manufacturing method includes a surface treatment step S1 and a maintenance step S2, as shown in FIG.
  • the surface treatment step S1 the processing gas Ga is supplied to the glass substrate P as a sheet glass to perform a predetermined surface treatment on the glass substrate P, and the supplied processing gas Ga is detoxified and exhausted.
  • a gas flow is formed, and in the maintenance step S2, the supply passage 17 (see FIG. 1) is closed, and the supply passage 17 is closed (in FIG. 1, the second on-off valve 24 is provided).
  • the harmless gas Gb By introducing the harmless gas Gb into the air supply path 17 on the downstream side of the position), a gas flow for replacing the processing gas Ga with the harmless gas Gb is formed.
  • step S1 Surface Treatment Step
  • the first on-off valve 23 is closed, the second on-off valve 24 is opened, and the third on-off valve 25 is closed.
  • the processing gas Ga generated by the processing gas generation device 16 is introduced into the air supply path 17 and is discharged from the air supply port 14 located at the downstream end of the air supply path 17.
  • the processing gas Ga released from the air supply port 14 is one main surface of the glass substrate P. It is supplied to Pa (the lower surface facing the air supply port 14), and a predetermined surface treatment is performed on one main surface Pa.
  • the processing gas Ga supplied to the glass substrate is drawn into the exhaust passage 19 through the exhaust ports 15 (two in this embodiment) facing the insertion passage 13 at positions different from the air supply port 14. It is introduced into the abatement apparatus 18 located on the downstream side.
  • the introduced processing gas Ga is detoxified by the detoxifying device 18 and is discharged out of the detoxifying device 18 in a state where harmful substances are removed.
  • the processing gas branch path 21 is closed by the third on-off valve 25, in the state shown in FIG. 3, the flow rate of the processing gas Ga to be originally introduced into the air supply path 17 decreases, and the surface treatment is performed. There is no risk of impact.
  • the processing gas Ga flowing in the air supply path 17, the insertion path 13, and the exhaust path 19 is discharged to the detoxifying device 18 in a form that is pushed out by the harmless gas Gb.
  • the processing gas Ga in the surface treatment apparatus 11 is replaced by the harmless gas Gb. Therefore, the operator can disassemble the surface treatment apparatus 11 safely and perform maintenance such as state confirmation and maintenance.
  • the harmless gas introduction path 20 as described above, the harmless gas Gb can be introduced into the air supply path 17 without passing through the processing gas generation device 16, so that the conditions for introducing the harmless gas Gb (flow rate, Pressure, temperature, etc.) can be set relatively freely. Therefore, for example, by setting a larger flow rate, it is possible to replace the processing gas Ga with the harmless gas Gb in a short time.
  • the processing gas Ga can be supplied to the processing gas branch path 21 branched from the upstream side of the second opening / closing valve 24 of the air supply path 17. Therefore, for example, when the generation and supply of the processing gas Ga by the processing gas generation device 16 are continued, the processing gas Ga passes through the processing gas branch passage 21 and the exhaust passage 19 as shown in FIG. Introduced into Therefore, during the above-described replacement process, problems occur due to the processing gas Ga being confined between the processing gas generation device 16 and the second on-off valve 24 in the processing gas generation device 16 or the supply passage 17. This makes it possible to perform the replacement work safely.
  • FIG. 5 is a flow path configuration diagram of the manufacturing apparatus 30 according to the second embodiment
  • FIG. 6 is a flowchart showing a procedure of a manufacturing method (surface treatment and maintenance) using the manufacturing apparatus 30.
  • the manufacturing apparatus 30 includes a surface treatment apparatus 31 having a flow path configuration different from that of the first embodiment, and specifically, a merge of the process gas branch path 21 in the exhaust path 19.
  • a fourth on-off valve 26 that opens and closes the exhaust passage 19 is disposed upstream of the position P2.
  • the structure of those other than this is the same as the manufacturing apparatus 10 (surface treatment apparatus 11) which concerns on 1st embodiment, detailed description is abbreviate
  • omitted since the structure of those other than this is the same as the manufacturing apparatus 10 (surface treatment apparatus 11) which concerns on 1st embodiment, detailed description is abbreviate
  • the manufacturing method of the glass substrate which concerns on this embodiment has surface treatment process S1 and maintenance process S2, as shown in FIG.
  • the details of the maintenance step S2 are different from the manufacturing method according to the first embodiment. That is, in the maintenance step S2 according to the present embodiment, the harmless gas Gb is introduced into the air supply path 17 on the downstream side of the second opening / closing valve 24 with the air supply path 17 closed and the exhaust path 19 opened.
  • the non-hazardous gas introduction step S21 for replacing the process gas Ga with the non-hazardous gas Gb, and the supply of the non-hazardous gas Gb are stopped, and then the exhaust path 19 is closed on the upstream side of the joining position P2 of the process gas branch path 21.
  • a flow path dividing step S22 for completely dividing the flow path of the processing gas Ga and the flow path of the harmless gas Gb. The details of each step will be described below.
  • (S1) Surface treatment step In this step, as shown in FIG. 7, the first on-off valve 23 is closed, the second on-off valve 24 is opened, the third on-off valve 25 is closed, and the fourth on-off valve 26 is opened. State. Thus, the processing gas Ga generated by the processing gas generation device 16 is introduced into the air supply path 17 and is discharged from the air supply port 14 located at the downstream end of the air supply path 17.
  • the processing gas Ga released from the air supply port 14 is one main surface of the glass substrate P. It is supplied to Pa (the lower surface facing the air supply port 14), and a predetermined surface treatment is performed on one main surface Pa.
  • the processing gas Ga supplied to the glass substrate P is exhausted facing the insertion passage 13 at a position different from the air supply port 14. It is drawn into the exhaust passage 19 through the mouth 15 (two in this embodiment) and introduced into the abatement device 18 located on the downstream side of the exhaust passage 19.
  • the introduced processing gas Ga is detoxified by the detoxifying device 18 and is discharged out of the detoxifying device 18 in a state where harmful substances are removed.
  • processing gas branch passage 21 is closed by the third on-off valve 25, in the state shown in FIG. 7, the flow rate of the processing gas Ga to be originally introduced into the air supply passage 17 is reduced and surface treatment is performed. There is no risk of impact.
  • (S2) Maintenance step (S21) Harmless gas introduction step In the present embodiment, when it is necessary to stop the surface treatment for some reason and perform maintenance of the surface treatment apparatus 31, the following treatment (operation) )I do. That is, in the step of replacing the processing gas Ga with the harmless gas Gb, as shown in FIG. 8, first, the second on-off valve 24 is closed and the third on-off valve 25 is opened. Then, the first on-off valve 23 is opened. The fourth on-off valve 26 is kept open. As a result, the supply of the processing gas Ga toward the downstream side of at least the second opening / closing valve 24 in the air supply path 17 is stopped, and the harmless gas Gb is newly introduced downstream of the joining position P1. .
  • the processing gas Ga flowing in the air supply path 17, the insertion path 13, and the exhaust path 19 is discharged to the detoxifying device 18 in a form that is pushed out by the harmless gas Gb.
  • the processing gas Ga in the surface treatment apparatus 11 is replaced by the harmless gas Gb. Therefore, the operator can safely disassemble the surface treatment apparatus 11 and perform maintenance.
  • the processing gas Ga can be supplied to the processing gas branch path 21 branched from the upstream side of the second opening / closing valve 24 of the air supply path 17. Therefore, for example, when the generation and supply of the processing gas Ga by the processing gas generation device 16 is continued, the processing gas Ga passes through the processing gas branch passage 21 and the exhaust passage 19 and further the abatement device 18 as shown in FIG. Introduced into Therefore, the above-described replacement operation can be performed without stopping the generation and supply of the processing gas Ga by the processing gas generation device 16.
  • step S21 the harmless gas Gb is introduced into the air supply path 17, and this step is performed after the air supply path 17, the insertion path 13, and the exhaust path 19 are replaced with the harmless gas Gb.
  • the first on-off valve 23 is closed to stop the supply of the harmless gas Gb to the air supply path 17, and the fourth on-off valve 26 is closed to dispose the processing gas branch path in the exhaust path 19.
  • the flow of the exhaust passage 19 is blocked upstream of the merging position P ⁇ b> 2 of 21.
  • the second on-off valve 24 remains closed, and the third on-off valve 25 remains open.
  • the processing gas branch path 21 and the exhaust path 19 are completely separated from the region downstream of the fourth on-off valve 26.
  • the flow path of the surface treatment apparatus 31 is divided into a space where only the harmless gas Gb exists and a space where only the processing gas Ga exists.
  • the flow rate or fluid pressure of the harmless gas Gb is set to be significantly larger than the flow rate or fluid pressure of the processing gas Ga, the processing gas Ga is converted into the processing gas branch 21.
  • the processing gas Ga can flow into the supply passage 17 even if the amount is small as long as it is not completely shut off. It is difficult to completely eliminate sex.
  • the manufacturing apparatus 30 according to the present embodiment when the air supply path 17 and the glass substrate processing space (insertion path 13) described above are completely filled with the harmless gas Gb. By closing the fourth on-off valve 26, even when replacing the harmless gas Gb while continuing the generation and supply of the processing gas Ga, the possibility of the operator touching the processing gas Ga is completely eliminated. As a result, the surface treatment apparatus 31 can be safely disassembled for confirmation work and maintenance.
  • the glass substrate manufacturing method includes a surface treatment step S1, a maintenance step S2, and a surface treatment restart preparation step S3, as shown in FIG. Since the surface treatment step S1 and the maintenance step S2 are the same as those in the second embodiment, the details of the surface treatment restart preparation step S3 will be described below.
  • step S3 Surface treatment resumption preparation step
  • the second on-off valve 24 and the fourth on-off valve 26 are first opened from the state at the time of the immediately preceding maintenance step S2 (the state shown in FIG. 9).
  • the three on-off valve 25 is closed.
  • the first on-off valve 23 is kept closed.
  • the generation and supply of the processing gas Ga by the processing gas generation device 16 continues without stopping (both refer to FIG. 7).
  • the processing gas Ga is immediately introduced into the air supply path 17 as shown in FIG. 7, and the harmless gas Gb flowing through the air supply path 17 is replaced with the processing gas Ga.
  • the supply passage 17 and the exhaust passage 19 can be filled again with the processing gas Ga.
  • the waiting time until the process gas Ga generation state is stabilized after the process gas Ga generation is restarted which may occur when the process gas generation device 16 is restarted from a stopped state, is omitted.
  • the surface treatment can be resumed immediately.
  • the glass substrate manufacturing method according to the present embodiment includes a surface treatment step S1 and a maintenance step S2, as shown in FIG.
  • the details of the maintenance step S2 are different from the manufacturing methods according to the first to third embodiments. That is, in the maintenance step S2 according to the present embodiment, the generation of the processing gas Ga by the processing gas generation device 16 is stopped, and the processing gas generation of the gas that is the raw material of the processing gas Ga (the raw material gas Fa shown in FIG. 1 and the like) There is a carrier gas introduction step S23 in which the supply to the apparatus 16 is stopped and the supply of the carrier gas Fb contained in the process gas Ga to the process gas generation apparatus 16 is continued. Since the surface treatment step S1 is the same as in the second and third embodiments, the details of the maintenance step S2 including the carrier gas introduction step S23 will be described below with reference to FIG.
  • the generation of the processing gas Ga by the processing gas generation device 16 is stopped, and the raw material gas Fa such as carbon tetrafluoride gas used as the raw material of the processing gas Ga (see FIG. 1). ) And the supply of the carrier gas Fb contained in the processing gas Ga to the processing gas generation device 16 is continued. Thereby, the carrier gas Fb is introduced into the exhaust passage 19 through the inside of the processing gas generation device 16, the region upstream of the second opening / closing valve 24 in the air supply passage 17, and the processing gas branch passage 21. Is done. Therefore, the processing gas Ga existing in the processing gas generator 16 until just before is replaced with the carrier gas Fb.
  • the raw material gas Fa such as carbon tetrafluoride gas used as the raw material of the processing gas Ga
  • the carrier gas Fb is usually an inert gas such as nitrogen gas, and is a gas that is substantially harmless to the human body at least when mixed with air. Therefore, when the operation of the surface treatment apparatus 31 is stopped (in the maintenance step S2), deterioration due to continuous exposure of the inside of the processing gas generation device 16 to the processing gas Ga is prevented, and the processing gas generation device 16 is kept for a long period of time. Can be used. Further, by replacing the processing gas Ga inside the processing gas generation device 16 with the carrier gas Fb, the processing gas Ga can be completely excluded from the processing gas generation device 16. As described above, since the carrier gas Fb is much safer than the processing gas Ga, the processing gas generation device 16 can be supplied safely even when the processing gas generation device 16 needs to be replaced. It can be removed from the air passage 17.
  • the first on-off valve 23 is disposed on the harmless gas introduction path 20 and the second on-off valve 24 is disposed on the air supply path 17 separately from the first on-off valve 23.
  • it is not particularly limited to this form. As long as it is possible to introduce either the harmless gas Gb or the processing gas Ga to the downstream side of the air supply path 17 from the joining position P1 of the harmless gas introduction path 20 and the air supply path 17, other forms are adopted. It is also possible.
  • FIG. 13 shows a glass substrate manufacturing apparatus 40 according to an example (fifth embodiment of the present invention).
  • This manufacturing apparatus 40 is a three-way valve that switches the flow path to the merging position P1 between the harmless gas introduction path 20 and the air supply path 17 instead of the first on-off valve 23 and the second on-off valve 24 shown in FIG. 41 is arranged.
  • the three-way valve 41 includes a flow of processing gas Ga introduced from the upstream side of the merging position P1 in the air supply path 17 toward the downstream side of the air supply path 17 through the merging position P1, and a harmless gas introduction path.
  • the harmless gas Gb introduced from 20 can be switched selectively to a flow that passes through the merge position P ⁇ b> 1 and goes to the downstream side of the air supply path 17. Therefore, even when both the processing gas Ga and the harmless gas Gb are supplied, only one of the processing gas Ga and the harmless gas Gb is always on the downstream side of the joining position P1 of the air supply path 17. The introduction of the other is prevented.
  • the second on-off valve 24 is disposed on the air supply path 17, and the third on-off valve 25 is disposed on the processing gas branch path 21 separately from the second on-off valve 24.
  • the processing gas Ga can be introduced to either the processing gas branch path 21 and the downstream side of the position where the processing gas branch path 21 of the supply air path 17 branches, other forms may be taken. Is possible.
  • FIG. 14 shows a glass substrate manufacturing apparatus 50 according to an example (sixth embodiment of the present invention).
  • This manufacturing apparatus 50 is a three-way valve that switches the flow path to the branch position P3 of the process gas branch path 21 from the air supply path 17 instead of the second on-off valve 24 and the third on-off valve 25 shown in FIG. 51 is arranged.
  • the three-way valve 51 is configured such that the processing gas Ga introduced from the upstream side of the branch position P3 in the air supply path 17 passes through the branch position P3 and goes directly downstream of the air supply path 17 and the processing gas. Ga can alternatively be switched to the flow toward the process gas branch path 21 via the branch position P3.
  • the processing gas Ga is supplied from the processing gas generation device 16, the processing gas Ga is always introduced into only one of the downstream side of the branch position P3 of the air supply path 17 and the processing gas branch path 21, and the other side. Introduction to is prevented.
  • the processing gas Ga is continuously generated and supplied (in the case of the first to third embodiments)
  • the processing gas Ga is always supplied to only one of the supply air passage 17 and the processing gas branch passage 21. This is because introduction is sufficient. Therefore, the three-way valve 51 is provided at the branch position P3, and the three-way valve 51 is operated so that the supply passage 17 side is opened during the surface treatment step S1 and the treatment gas branch passage 21 side is opened during the maintenance step S2. Therefore, it is possible to perform maintenance safely while suppressing the equipment cost.
  • the present invention is applied to any one main surface of the band-shaped plate glass. It is also possible to apply. That is, although not shown in the drawings, the structure described above is also applied to the case where surface treatment is performed only on one surface of the front and back surfaces of a glass film which has been formed into a strip shape and cut in the width direction and wound up at one or both ends in the longitudinal direction. It is possible to suitably perform the surface treatment according to the above. Further, when the surface treatment is performed not only on one main surface Pa but also on the other main surface (upper main surface Pb in FIG. 1), the present invention is applied to the various plate glasses described above. It is also possible to apply.

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PCT/JP2017/043024 2016-12-21 2017-11-30 ガラス基板の製造装置及び製造方法 WO2018116779A1 (ja)

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Citations (2)

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JPS6437718A (en) * 1987-08-04 1989-02-08 Asahi Glass Co Ltd Production of substrate for magnetic disk
JP2014125414A (ja) * 2012-12-27 2014-07-07 Nippon Electric Glass Co Ltd 板状ガラスの表面処理装置及び表面処理方法

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JP2002359229A (ja) * 2001-06-01 2002-12-13 Mitsubishi Electric Corp 半導体装置の製造方法および半導体装置の製造装置
JP3891848B2 (ja) * 2002-01-17 2007-03-14 東京エレクトロン株式会社 処理装置および処理方法
JP4579522B2 (ja) * 2003-09-29 2010-11-10 株式会社イー・スクエア プラズマ表面処理装置
CN100397569C (zh) * 2005-02-08 2008-06-25 东京毅力科创株式会社 基板处理装置、基板处理装置的控制方法
US20110020187A1 (en) * 2008-03-06 2011-01-27 Toyo Tanso Co., Ltd. Surface treatment apparatus
JP5277784B2 (ja) * 2008-08-07 2013-08-28 東京エレクトロン株式会社 原料回収方法、トラップ機構、排気系及びこれを用いた成膜装置
JP5887201B2 (ja) * 2012-05-14 2016-03-16 東京エレクトロン株式会社 基板処理方法、基板処理装置、基板処理プログラム、及び記憶媒体
JP2014080331A (ja) 2012-10-17 2014-05-08 Asahi Glass Co Ltd 反射防止性ガラスの製造方法

Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
JPS6437718A (en) * 1987-08-04 1989-02-08 Asahi Glass Co Ltd Production of substrate for magnetic disk
JP2014125414A (ja) * 2012-12-27 2014-07-07 Nippon Electric Glass Co Ltd 板状ガラスの表面処理装置及び表面処理方法

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