WO2018105831A1 - 웨이퍼 캐리어 두께 측정장치 - Google Patents

웨이퍼 캐리어 두께 측정장치 Download PDF

Info

Publication number
WO2018105831A1
WO2018105831A1 PCT/KR2017/005870 KR2017005870W WO2018105831A1 WO 2018105831 A1 WO2018105831 A1 WO 2018105831A1 KR 2017005870 W KR2017005870 W KR 2017005870W WO 2018105831 A1 WO2018105831 A1 WO 2018105831A1
Authority
WO
WIPO (PCT)
Prior art keywords
wafer carrier
wafer
thickness
sensor
thickness measuring
Prior art date
Application number
PCT/KR2017/005870
Other languages
English (en)
French (fr)
Korean (ko)
Inventor
정석진
Original Assignee
에스케이실트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에스케이실트론 주식회사 filed Critical 에스케이실트론 주식회사
Priority to JP2018527080A priority Critical patent/JP6578442B2/ja
Priority to US15/780,605 priority patent/US11371829B2/en
Priority to DE112017004821.4T priority patent/DE112017004821T5/de
Priority to CN201780004152.0A priority patent/CN108700405B/zh
Publication of WO2018105831A1 publication Critical patent/WO2018105831A1/ko

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/026—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness by measuring distance between sensor and object
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
    • G01B11/0633—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection using one or more discrete wavelengths
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/14—Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/02041—Interferometers characterised by particular imaging or detection techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/02041—Interferometers characterised by particular imaging or detection techniques
    • G01B9/02042—Confocal imaging
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/50—Using chromatic effects to achieve wavelength-dependent depth resolution

Definitions

  • the present invention relates to a wafer carrier thickness measuring apparatus capable of accurately measuring the inner and outer circumferential thickness of the wafer carrier in a non-contact manner.
  • a polishing process for mirroring the surface of the silicon wafer is performed.
  • Such a polishing process is performed by bending a micro surface by performing a mechanical and chemical reaction in order to improve the flatness of the wafer. control of nanotopography and roughness.
  • a double side polishing process (DSP: Double Side Polishing) is superior to the flatness of the wafer as compared to the single side polishing process, and this double side polishing process generally uses a double side polishing apparatus. To polish both sides of the wafer.
  • the two-side polishing device is a 4-way type in which four parts of an upper plate, a lower plate, a sun gear and an internal gear rotate, and polish both sides of a wafer mounted on a carrier. ) Is used a lot.
  • the carrier on which the wafer is mounted is subjected to a process of measuring its thickness several times before and after being put into the polishing process.
  • the thickness of the carrier may be measured, and then prepared as a carrier of the wafer to be actually processed.
  • the surface of the carrier is also polished along with the surface of the wafer. Since the carrier is used in the polishing process every 1 to 7 days, the thickness of the carrier is measured several times during the polishing process.
  • the thickness measurement of the carrier is more than 5um above the average level, it is determined that the carrier does not function, it is necessary to discard the existing carrier, and then insert a new carrier.
  • FIG. 1 is a view showing a typical wafer carrier
  • Figure 2 is a view showing a thickness measurement apparatus of a wafer carrier according to the prior art
  • Figure 3 is a graph showing the thickness measurement results of the wafer carrier according to the prior art.
  • a typical wafer carrier C is made of epoxy glass, as shown in FIG. 1, in which glass fiber (F) components are arranged in a lattice pattern on the surface to ensure strength.
  • the thickness measuring sensor 2 is installed on the surface plate 1 so as to be able to lift up and down.
  • a tip 2a which is a kind of contact sensor, is provided.
  • the tip 2a is similarly mounted on the surface plate ( At the point of contact with 1), the falling length of the sensor 2 is sensed as the measurement length L 1 .
  • the thickness t of the carrier C may be calculated by calculating the reference length L 0 and the measurement length L 1 measured as described above.
  • the thickness t of the wafer carrier is different for each position.
  • the thickness t of the carrier is measured at the point where the glass fibers are present, while the thickness of the carrier is measured at the point where the glass fibers are not present. (t) is measured thinly.
  • the thickness measuring apparatus of the wafer carrier may damage the surface of the wafer carrier because the tip comes down and comes into direct contact with the surface plate or the wafer carrier.
  • an object of the present invention is to provide a wafer carrier thickness measuring apparatus capable of accurately measuring the inner and outer circumferential thickness of the wafer carrier.
  • the present invention provides a rotatable and elevating device, comprising: a first table capable of supporting a central portion of a wafer carrier; A second table positioned outside the first table and rotatably installed to support an outer circumferential portion of the wafer carrier; An upper / lower sensor that calculates a thickness of the wafer carrier by measuring the distance to the upper and lower surfaces of the wafer carrier supported by one of the first and second tables in a non-contact manner; And a sensor driving means positioned on one side of the second table and moving the upper and lower sensors to the upper and lower sides of the wafer carrier supported by one of the first and second tables. do.
  • the sensor drive means the rotating shaft located in the vertical direction on one side of the second table, extending from the upper portion of the rotating shaft in the horizontal direction, the upper fixed end to which the upper sensor is fixed, And a lower fixed end extending in a horizontal direction from the lower side to which the lower sensor is fixed, and a rotating motor for rotating the rotary shaft.
  • the wafer may further include an alignment sensor provided with at least one alignment indicator, and configured to sense an alignment indicator of a wafer placed on one of the first and second tables.
  • the wafer carrier thickness measuring apparatus of the present invention selectively supports the inner and outer parts of the wafer carrier by the first and second tables, and simultaneously measures the distance to the upper and lower surfaces of the wafer carrier by the first and second sensors in a non-contact manner.
  • the thickness of the wafer carrier can be calculated.
  • the thickness of the wafer carrier can be accurately measured by directly measuring the distance to the upper and lower surfaces of the wafer carrier, thereby accurately measuring the thickness of the wafer carrier, and thus measuring accuracy ( accuracy).
  • the wafer carrier thickness measuring apparatus of the present invention detects an alignment mark provided on a wafer by an alignment sensor even when the wafer is loaded on one of the first and second tables, and measures the thickness of each wafer based on the alignment mark of the wafer. It can be measured.
  • the wafer carrier can be loaded at the same position every time, and thus the thickness can be measured at the same position for each wafer carrier, thereby improving measurement reproducibility.
  • FIG. 1 illustrates a typical wafer carrier.
  • Figure 2 is a view showing a thickness measuring device of the wafer carrier according to the prior art.
  • Figure 3 is a graph showing the result of measuring the thickness of the wafer carrier according to the prior art.
  • Figure 4 is a perspective view of the wafer carrier thickness measuring apparatus of the present invention.
  • FIG. 5 illustrates in detail the first table applied to FIG. 4.
  • FIG. 6 is a detail view of a second table applied to FIG. 4; FIG.
  • FIG. 7 is a view showing in detail the upper and lower sensors and sensor driving means applied to FIG.
  • FIG. 8 is a schematic diagram illustrating a principle of measuring the thickness of a wafer carrier according to the present invention.
  • 9A to 9I illustrate a thickness measurement process of a wafer carrier according to the present invention.
  • 4 to 7 is a view showing a wafer carrier thickness measuring apparatus of the present invention.
  • the wafer carrier thickness measuring apparatus of the present invention includes first and second tables 110 and 120 capable of selectively supporting the inner and outer portions of the wafer carrier, as shown in FIGS. 4 to 7, and up and down the wafer carrier.
  • the upper and lower sensors 131 and 132 capable of measuring the distance by non-contact measurement and calculating the thickness thereof, and the upper and lower sensors 131 and 132 to the upper and lower sides of the wafer carrier supported by the first and second tables 110 and 120. It is configured to include a sensor driving means 140 for moving, a monitor (M) and a control unit (not shown) for monitoring the sensor measurement process of the wafer carrier.
  • the first table 110 is configured to support the inner circumferential portion of the wafer carrier as shown in FIG. 5, and has a disc shape having a diameter smaller than that of the wafer carrier.
  • the first table 110 is rotatably installed and installed at the same time.
  • the rotary shaft 111 is provided at the center of the lower surface of the first table 110, and the first table 110 is rotated as the rotary shaft 111 is rotated by a separate rotary motor (not shown). Can be rotated.
  • the guide rail 112 is provided in one side of the first table 110 in the vertical direction, and the guide 113 is provided in one side of the frame provided below the first table 110.
  • the first table 110 may be elevated, but is not limited thereto.
  • the second table 120 is provided at an outer circumference of the first table 110 to support an outer circumferential portion of the wafer carrier. It consists of the ring-shaped slider 121 larger than diameter.
  • the second table 120 is rotatably installed, but is located on a reference plane and does not move up and down separately.
  • a gear value is formed at an outer circumferential end of the slider 121, and a driving motor (not shown) is provided at one side of the lower side of the slider 121, and the gear value of the slider 121 and the driving motor (not shown).
  • the second table 120 may be rotated as it is engaged with the gear tooth rotated by c), but is not limited thereto.
  • the slider 121 may be provided with a pad 122 to increase frictional force at the portion in contact with the wafer carrier.
  • the slider 121 is provided with a ring plate-shaped groove (not shown) as the inner circumferential portion is formed stepped, and the pad 122 is made of urethane and adhered to the groove of the slider 121.
  • the bolt plate may be configured in a ring plate shape, but is not limited thereto.
  • a positioning pin that may fix the position of the wafer carrier. 123 may be further provided.
  • three positioning pins 123 are provided on the circumference smaller than the diameter of the wafer carrier of the second table 120 at a predetermined interval, and the positioning pins 123 are the sliders. It is provided on a separate bracket provided between the 121 and the pad 122 can be installed to be movable in a radial direction to be engaged with some of the grooves (h) formed at a predetermined interval on the outer circumference of the wafer carrier (C).
  • h the grooves formed at a predetermined interval on the outer circumference of the wafer carrier (C).
  • the bracket is elastically supported by a spring 124 provided in the center direction of the second table 120, and the outer circumference of the bracket is provided by an LM guide provided on the lower side and a cylinder 125 provided on the outer circumferential side. It may be installed to be movable in the direction, but is not limited.
  • the upper and lower sensors 131 and 132 are positioned on the upper and lower sides of the first and second tables 110 and 120 by the sensor driving unit 140 as shown in FIG. 7, and the upper sensor 131 is a wafer.
  • the distance to the upper surface of the carrier is measured in a non-contact manner, and the lower sensor 132 measures the distance to the lower surface of the wafer carrier in a non-contact manner.
  • the upper and lower sensors 131 and 132 are constituted by a chromatic confocal sensor, which is a kind of non-contact displacement sensor.
  • the confocal sensor disperses the light source into colors and disposes the arrangement according to the wavelength of the color. In this case, the distance can be accurately measured even if the wafer carrier is made of an opaque or translucent material.
  • the sensor driving unit 140 is configured to mount the upper and lower sensors 131 and 132 and to move the upper and lower sides of the first and second tables 110 and 120, and the upper and lower parts on the rotating shaft 141.
  • the fixed ends 142 and 143 are integrally provided, and a rotation motor 144 for rotating the rotation shaft 141 is included.
  • the rotation shaft 141 is positioned in one side of the second table 120 in an up and down direction, and the upper and lower fixing ends 142 and 143 extend in the horizontal direction in the upper and lower portions of the rotation shaft 141. It is integrally formed in a shape, and the upper and lower sensors 131 and 132 are fixed to the ends of the upper and lower fixed ends 142 and 143.
  • the upper and lower fixed ends 142 and 143 may be positioned on the upper and lower sides of the first and second tables 110 and 120, and the upper and lower fixed ends 142 and 143.
  • the first and second tables 110 and 120 do not interfere with each other in structure.
  • the sensor driving means 140 may be installed to be elevated so that the upper and lower fixed ends 142 and 143 may be positioned above and below the first table 110 even when the first table 110 is elevated. do.
  • the guide rail 145 is provided in one side of the rotary shaft 141 in the vertical direction, the guide 146 which is movable along the guide rail 145 is connected to the rotary shaft 141, A lifting motor (not shown) for elevating the guide 146 along the guide rail 145 may be further provided, but is not limited thereto.
  • the guide 146 rotatably supports the rotation shaft 141, and as the guide 146 is elevated, the upper and lower fixed ends 142 and 143 and the upper and lower sensors 131 and 132 are also elevated. .
  • the wafer carrier is provided with the largest mounting hole in which the wafer is mounted in an eccentric position, and a plurality of holes are provided around the mounting hole so that the slurry supplied during the polishing process can be accommodated.
  • the thickness should be measured at the same position.
  • the wafer carrier is loaded on the first and second tables 110 and 120, the wafer carrier must be aligned.
  • the wafer carrier is provided with a separate alignment indicator (not shown) at a specific position.
  • the alignment indicator may be variously configured with holes, grooves, markings, etc., which are provided in a specific outer peripheral portion of the wafer carrier. It is not limited.
  • an alignment sensor 133 for detecting the position of the alignment indicator on the wafer carrier is provided at the upper fixed end 142, wherein the alignment sensor 133 is a CCD camera or the like that detects the alignment indicator as an image. It may be configured in the form, but is not limited thereto.
  • the wafer carrier is rotated, and when the alignment sensor 133 detects the alignment indicator of the wafer carrier, the rotation of the wafer carrier is stopped.
  • the distance to the upper and lower surfaces of the wafer carrier can be measured at each point where the wafer carrier is rotated at an angle.
  • the present invention can load the wafer carrier at the same position each time, thereby measuring the thickness at the same position for each wafer carrier, thereby improving measurement reproducibility.
  • FIG. 8 is a schematic diagram illustrating a principle of measuring the thickness of a wafer carrier according to the present invention.
  • the standard specimen K having a known thickness k is loaded in advance, and the upper and lower sensors 131 and 132 are provided to the upper and lower surfaces of the standard specimen K.
  • the distance (c, d) to the top / bottom of the wafer carrier (C) by the upper / lower sensors (131, 132) do.
  • a calculation unit built in the upper and lower sensors 131 and 132 calculates a thickness t of the wafer carrier according to Equation 1 below.
  • a portion of the wafer carrier C is supported by one of the first and second tables as described above, and thickness measurements are made at other points of the wafer carrier C that are not supported by the first and second tables. .
  • 9A to 9I illustrate a thickness measurement process of a wafer carrier according to the present invention.
  • the first and second tables 110 and 120 are located on the same reference plane and the upper and lower sensors 131 and 132 are located on one side thereof. .
  • the second table 120 rotates at a set angle, and the upper / lower sensors 131 and 132 measure the thickness of each inner circumferential portion of the wafer carrier C each time the second table 120 is rotated. .
  • the first table 110 rotates at a set angle, and each time the upper / lower sensors 131 and 132 measure the thickness of the outer circumferential portion of the wafer carrier C. .
  • the present invention is capable of preventing damage to the wafer carrier and accurately measuring the thickness of the wafer carrier because the thickness measurement is made in a non-contact manner at the same time supporting the part of the carrier while the wafer carrier is not supported. This improves measurement accuracy.
  • the wafer carrier thickness measuring apparatus of the present invention can accurately measure the inner / outer thickness of the wafer carrier in a non-contact manner.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
PCT/KR2017/005870 2016-12-06 2017-06-05 웨이퍼 캐리어 두께 측정장치 WO2018105831A1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2018527080A JP6578442B2 (ja) 2016-12-06 2017-06-05 ウェーハキャリアの厚さ測定装置
US15/780,605 US11371829B2 (en) 2016-12-06 2017-06-05 Wafer carrier thickness measuring device
DE112017004821.4T DE112017004821T5 (de) 2016-12-06 2017-06-05 Vorrichtung zum Messen der Dicke eines Waferträgers
CN201780004152.0A CN108700405B (zh) 2016-12-06 2017-06-05 晶圆载体厚度测量装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2016-0165367 2016-12-06
KR1020160165367A KR101856875B1 (ko) 2016-12-06 2016-12-06 웨이퍼 캐리어 두께 측정장치

Publications (1)

Publication Number Publication Date
WO2018105831A1 true WO2018105831A1 (ko) 2018-06-14

Family

ID=62184714

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2017/005870 WO2018105831A1 (ko) 2016-12-06 2017-06-05 웨이퍼 캐리어 두께 측정장치

Country Status (6)

Country Link
US (1) US11371829B2 (de)
JP (1) JP6578442B2 (de)
KR (1) KR101856875B1 (de)
CN (1) CN108700405B (de)
DE (1) DE112017004821T5 (de)
WO (1) WO2018105831A1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109817539B (zh) * 2019-01-25 2020-12-25 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） 晶圆测厚装置及晶圆测厚系统
CN110108716A (zh) * 2019-05-06 2019-08-09 华侨大学 一种自动化衬底晶片缺陷及厚度检测系统
CN110926397B (zh) * 2019-12-25 2021-06-04 中国计量科学研究院 一种共焦测厚中双传感器位姿的透明圆孔标定方法
CN112880597B (zh) * 2019-12-26 2022-12-27 南京力安半导体有限公司 晶圆平整度的测量方法
CN110962022A (zh) * 2019-12-31 2020-04-07 浙江芯晖装备技术有限公司 一种抛光设备
KR102428891B1 (ko) * 2020-01-23 2022-08-03 주식회사 그란테크 디스크 검사장치
CN113739737A (zh) * 2020-05-28 2021-12-03 深圳市索恩达电子有限公司 双头测厚装置
CN111805410A (zh) * 2020-06-01 2020-10-23 长江存储科技有限责任公司 研磨系统
CN111750786B (zh) * 2020-07-06 2022-03-01 上海新昇半导体科技有限公司 厚度量测设备、抛光系统及抛光物料管理方法
JP7425411B2 (ja) * 2020-10-12 2024-01-31 株式会社Sumco キャリア測定装置、キャリア測定方法、及びキャリア管理方法
CN112539706B (zh) * 2020-12-09 2022-09-30 深圳友讯达科技股份有限公司 一种晶圆薄片切割质量检测设备
KR20220112463A (ko) * 2021-02-04 2022-08-11 주식회사 엘지에너지솔루션 라미네이션 장치 및 라미네이션 장치의 불량 전극 셀 조립체 배출방법
CN114459363A (zh) * 2022-01-14 2022-05-10 江苏汇成光电有限公司 一种晶圆厚薄双向量测方法
KR102558478B1 (ko) * 2022-12-05 2023-07-21 (주)에스와이이엔지 반도체 웨이퍼의 두께 측정시스템

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0649958U (ja) * 1992-10-01 1994-07-08 京セラ株式会社 半導体ウェハ厚さ測定機
JPH10125753A (ja) * 1996-09-02 1998-05-15 Murata Mfg Co Ltd 半導体のキャリア濃度測定方法、半導体デバイス製造方法及び半導体ウエハ
KR100872755B1 (ko) * 2000-05-25 2008-12-08 가부시키가이샤 니콘 캐리어 형상 측정기
KR101322591B1 (ko) * 2009-10-06 2013-10-28 가부시키가이샤 코베루코 카겐 반도체 캐리어 수명 측정 장치 및 그 방법
KR101361382B1 (ko) * 2006-12-14 2014-02-10 아이에스 테크놀로지 재팬 가부시키가이샤 원판 보유 지지 장치 및 결함 이물질 검출 장치

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0649958A (ja) 1992-07-28 1994-02-22 Ig Tech Res Inc 新生瓦屋根の谷部改修構造
JP4675451B2 (ja) * 2000-04-14 2011-04-20 株式会社ディスコ 切削装置
JP2002323289A (ja) 2001-04-25 2002-11-08 Ono Sokki Co Ltd 遠心式乾燥装置
JP4959318B2 (ja) 2006-12-20 2012-06-20 株式会社ディスコ ウエーハの計測装置およびレーザー加工機
JP2008235650A (ja) * 2007-03-22 2008-10-02 Disco Abrasive Syst Ltd デバイスの製造方法
CN101216686B (zh) * 2008-01-10 2010-08-25 上海微电子装备有限公司 一种晶片预对准平台及使用该平台的晶片预对准方法
CN201166564Y (zh) 2008-01-17 2008-12-17 上海星纳电子科技有限公司 太阳能晶片无接触式测试系统
JP5165450B2 (ja) 2008-04-22 2013-03-21 株式会社ディスコ 研削装置及び板状物の厚み算出方法
JP5324232B2 (ja) 2009-01-08 2013-10-23 日東電工株式会社 半導体ウエハのアライメント装置
CN201562672U (zh) 2009-11-17 2010-08-25 中芯国际集成电路制造(上海)有限公司 晶圆承放台
JP6040757B2 (ja) * 2012-10-15 2016-12-07 東京エレクトロン株式会社 搬送機構の位置決め方法、被処理体の位置ずれ量算出方法及び搬送機構のティーチングデータの修正方法
CN105185722A (zh) 2014-05-30 2015-12-23 盛美半导体设备（上海）有限公司 晶圆固持装置
CN105289923A (zh) 2014-05-30 2016-02-03 盛美半导体设备（上海）有限公司 一种晶圆涂胶机和涂胶方法
US9396983B2 (en) 2014-06-02 2016-07-19 Epistar Corporation Susceptor
KR101655074B1 (ko) 2014-11-04 2016-09-07 주식회사 케이씨텍 화학 기계적 연마 장치 및 와전류 센서를 이용한 웨이퍼 도전층 두께 측정 방법
CN105990174B (zh) 2015-02-15 2020-02-07 盛美半导体设备（上海）有限公司 半导体晶圆的测量装置及方法
JP6492736B2 (ja) 2015-02-17 2019-04-03 東京エレクトロン株式会社 基板処理装置及び基板処理方法並びに記憶媒体
JP6441737B2 (ja) 2015-04-28 2018-12-19 株式会社ディスコ 切削装置
CN105161438B (zh) 2015-07-16 2017-11-24 北京工业大学 一种大尺寸磨削晶圆厚度测量夹具
JP6634154B2 (ja) * 2016-05-24 2020-01-22 三益半導体工業株式会社 回転テーブル用ウェーハ保持機構及び方法並びにウェーハ回転保持装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0649958U (ja) * 1992-10-01 1994-07-08 京セラ株式会社 半導体ウェハ厚さ測定機
JPH10125753A (ja) * 1996-09-02 1998-05-15 Murata Mfg Co Ltd 半導体のキャリア濃度測定方法、半導体デバイス製造方法及び半導体ウエハ
KR100872755B1 (ko) * 2000-05-25 2008-12-08 가부시키가이샤 니콘 캐리어 형상 측정기
KR101361382B1 (ko) * 2006-12-14 2014-02-10 아이에스 테크놀로지 재팬 가부시키가이샤 원판 보유 지지 장치 및 결함 이물질 검출 장치
KR101322591B1 (ko) * 2009-10-06 2013-10-28 가부시키가이샤 코베루코 카겐 반도체 캐리어 수명 측정 장치 및 그 방법

Also Published As

Publication number Publication date
US11371829B2 (en) 2022-06-28
CN108700405A (zh) 2018-10-23
JP2019509465A (ja) 2019-04-04
CN108700405B (zh) 2020-12-25
DE112017004821T5 (de) 2019-06-13
JP6578442B2 (ja) 2019-09-18
KR101856875B1 (ko) 2018-05-10
US20210164769A1 (en) 2021-06-03

Similar Documents

Publication Publication Date Title
WO2018105831A1 (ko) 웨이퍼 캐리어 두께 측정장치
WO2016080629A1 (ko) 웨이퍼 연마장비의 웨이퍼 로딩장치 및 웨이퍼 로딩위치 조정 방법
US4491787A (en) Flatness measuring device
WO2012077881A1 (ko) 엘이디 칩 검사장치
WO2016204508A1 (ko) 단차 측정 자동화장치
WO2018146659A1 (ko) 검사 장치
JP4836684B2 (ja) 検査ステージ及び検査装置
WO2014081074A1 (ko) 강판의 스케일 두께 측정장치
CN112729418B (zh) 一种高精密检测设备
CN109000537B (zh) 一种离合器片组厚度测量系统及厚度自动测量方法
WO2019143091A1 (ko) 웨이퍼 프로버
WO2016018049A1 (ko) 웨이퍼의 결함 측정장치
CN215644395U (zh) 一种晶圆测试仪
CN217484429U (zh) 一种具有隔绝功能的电子元件检测装置
CN210154951U (zh) 一种玻璃及玻璃组件用弯曲强度试验装置
CN212301756U (zh) 半导体测试装置
KR20230127552A (ko) 검사장치, 이를 포함하는 검사설비 및 검사 방법
CN210638813U (zh) 红外焦平面阵列探测器参数性能自动化测试设备
CN211601856U (zh) 一种非接触式孔位检测设备
CN207457055U (zh) 瓷砖色差检测设备
WO2024117283A1 (ko) Zt 스테이지
CN218270624U (zh) 一种超快速影像测量仪
CN218847178U (zh) 一种步进电机磁环同心度检测装置
CN112924764B (zh) 一种防静电性能测试的装置
CN217465776U (zh) 电池外壳尺寸检测设备

Legal Events

Date Code Title Description
ENP Entry into the national phase

Ref document number: 2018527080

Country of ref document: JP

Kind code of ref document: A

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17879535

Country of ref document: EP

Kind code of ref document: A1

122 Ep: pct application non-entry in european phase

Ref document number: 17879535

Country of ref document: EP

Kind code of ref document: A1