WO2018075682A1 - Elastic wave device with sub-wavelength thick piezoelectric layer - Google Patents

Elastic wave device with sub-wavelength thick piezoelectric layer Download PDF

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Publication number
WO2018075682A1
WO2018075682A1 PCT/US2017/057256 US2017057256W WO2018075682A1 WO 2018075682 A1 WO2018075682 A1 WO 2018075682A1 US 2017057256 W US2017057256 W US 2017057256W WO 2018075682 A1 WO2018075682 A1 WO 2018075682A1
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WO
WIPO (PCT)
Prior art keywords
layer
elastic wave
thickness
wave device
cut angle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2017/057256
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English (en)
French (fr)
Inventor
Rei Goto
Jie ZOE
Hiroyuki Nakamura
Chun Sing LAM
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Skyworks Solutions Inc
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Skyworks Solutions Inc
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Filing date
Publication date
Application filed by Skyworks Solutions Inc filed Critical Skyworks Solutions Inc
Priority to KR1020197014259A priority Critical patent/KR20190058680A/ko
Priority to SG11201903365SA priority patent/SG11201903365SA/en
Priority to GB1905101.0A priority patent/GB2569082A/en
Priority to CN201780064907.6A priority patent/CN109891612A/zh
Priority to DE112017005316.1T priority patent/DE112017005316B4/de
Publication of WO2018075682A1 publication Critical patent/WO2018075682A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/40—Piezoelectric or electrostrictive devices with electrical input and electrical output, e.g. functioning as transformers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6423—Means for obtaining a particular transfer characteristic
    • H03H9/6433—Coupled resonator filters
    • H03H9/6483—Ladder SAW filters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6489—Compensation of undesirable effects
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H9/72—Networks using surface acoustic waves
    • H03H9/725—Duplexers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/877—Conductive materials

Definitions

  • the interdigital transducer electrode can include aluminum.
  • an elastic wave device that includes a piezoelectric layer, an interdigital transducer electrode on the piezoelectric layer, a silicon layer configured to inhibit the elastic wave from leaking from the piezoelectric layer at anti-resonance, and a temperature compensating layer having a positive temperature coefficient of frequency.
  • the piezoelectric layer has a cut angle in a cut angle range from -10° to 60°.
  • the interdigital transducer electrode is configured to generate an elastic wave having a wavelength of ⁇ .
  • the piezoelectric layer has a thickness in a thickness range from 0.25 ⁇ to 0.8 ⁇ .
  • the piezoelectric layer is disposed between the silicon layer and the interdigital transducer electrode.
  • the interdigital transducer electrode is disposed between the temperature compensating layer and the piezoelectric layer.
  • Figures 42A to 42D are graphs of simulations of an elastic wave device of Figure 40 that includes silicon dioxide over a LN piezoelectric layer on a silicon substrate.
  • Figure 42A corresponds to LN having a cut angle of 0°.
  • Figure 42B corresponds to LN having a cut angle of 10°.
  • Figure 42C corresponds to LN having a cut angle of 20°.
  • Figure 42D corresponds to LN having a cut angle of 30°.
  • Figure 54 A is a schematic diagram of a duplexer that includes an elastic wave device according to one or more embodiments.
  • Figure 58 is a schematic block diagram of a wireless communication device that includes a filter with an elastic wave device in accordance with one or more embodiments.
  • Figures 3A to 3E are graphs of simulations of an elastic wave device 10 with a lithium tantalate piezoelectric layer having a cut angle of 42° and a thickness Hi of 0.25 ⁇ (where ⁇ is the wavelength of the elastic wave), a high velocity layer that is a silicon substrate, and an IDT electrode having a pitch Li of 2.0 um.
  • the thickness h of the IDT electrode was swept in this elastic wave device.
  • Figure 3A in a graph that shows the frequency responses for thickness h of an IDT electrode that are 0.08 ⁇ and 0.16 ⁇ and for a corresponding device without the silicon substrate bonded with the lithium tantalate layer.
  • Figure 3B shows that k for the device can start to decrease when h is less than about 0.08 ⁇ .
  • Figure 3C illustrates that Qs and Qp can increase with greater IDT electrode thickness h.
  • Figure 3D illustrates that FOM can increase with greater IDT electrode thickness h.
  • Figure 3E illustrates that Vs sensitivity can increase with a thinner IDT electrode.
  • the temperature compensating layer 22 can have a lower acoustic impedance than the piezoelectric layer 12.
  • the temperature compensating layer 22 can have a lower acoustic impedance than the high velocity layer 16.
  • the illustrated temperature compensating layer 22 has a thickness H 2 .
  • Figures 22A to 28B are graphs of simulations of an elastic wave device 20 having a lithium tantalate piezoelectric layer with a 42° cut angle (42LT), a high velocity layer that is a silicon substrate, and a temperature compensating layer that is a silicon dioxide layer. 2
  • Figure 23A illustrates a relationship between Qs and 42LT thicknesses for various silicon dioxide layer thicknesses.
  • a maximum Qs of about 1865 in this graph corresponds to a 42LT thickness of about 0.7 ⁇ and a silicon dioxide thickness of about 0.5 ⁇ .
  • Figure 23B illustrates a relationship between Qp and 42LT thicknesses for various silicon dioxide layer thicknesses.
  • a maximum Qp of about 2015 in this graph corresponds to a 42LT thickness of about 0.65 ⁇ and a silicon dioxide thickness of about 0.25 ⁇ .
  • the dots in Figures 23A and 23B indicate that a similar elastic wave device without the silicon substrate and the silicon dioxide layer has Qs of 1846 and Qp of 1406, respectively. Accordingly, the silicon substrate and the silicon dioxide layer can improve Qs and Qp. As indicated by these graphs, Qp can be improved more than Qs by the silicon substrate and the silicon dioxide layer.
  • Figure 30A is a graph of k as a function of 5LN thickness for various thicknesses of the silicon dioxide layer.
  • a maximum k of about 29.5% in this graph corresponds to a 5LN thickness of about 0.5 ⁇ and a silicon dioxide thickness of 0.05 ⁇ .
  • Figure 37A is a graph of Vo. This graph indicates that low-velocity silicon dioxide is least involved in wave propagation.
  • Figure 37B is a graph of k .
  • Figure 37B indicates that k is particularly low when a silicon dioxide layer is disposed between an IDT electrode and a 5LN layer.
  • Figure 37C is a graph of Qp.
  • Figure 37D is a graph of Qp.
  • Figure 37D indicates that the Al/5LN/Si0 2 /Si elastic wave has the best Qp. This can be due to the largest reflection on the Si0 2 /Si interface to prevent leakage into the silicon substrate.
  • Figure 37E is a graph of Qavg.
  • Figure 37F is a graph of FOM.
  • Figures 43A to 45B are graphs of simulations of an elastic wave device 30 having a lithium niobate piezoelectric layer with a 5° cut angle (5LN), a high velocity layer that is a silicon substrate, and a temperature compensating layer that is a silicon dioxide layer.
  • Figures 43 A and 43B illustrate relationships between (1) TCF and thickness of the silicon dioxide layer and (2) k and thickness of the silicon dioxide layer.
  • Figure 43A corresponds to a 5LN piezoelectric layer with a thickness of 0.25 ⁇ .
  • An average TCF of 0 is indicated at a silicon dioxide thickness of about 0.3 ⁇ in Figure 43A.
  • Figure 43B corresponds to a 5LN piezoelectric layer with a thickness of 0.5 ⁇ .
  • An average TCF of 0 is indicated at a silicon dioxide thickness of about 0.3 ⁇ in Figure 43B.
  • a packaged module can include any of the elastic wave devices discussed herein. Some such packaged modules can also include a radio frequency switch and/or a power amplifier.
  • the elastic wave devices discussed herein can be implemented in a variety of packaged modules. Some example packaged modules will now be discussed in which any suitable principles and advantages of the elastic wave devices discussed herein can be implemented.
  • Figures 55, 56, and 57 are schematic block diagrams of illustrative packaged modules according to certain embodiments. Any suitable features discussed with reference to any of these packaged modules can be implemented in combination with each other.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Power Engineering (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Piezo-Electric Transducers For Audible Bands (AREA)
PCT/US2017/057256 2016-10-20 2017-10-18 Elastic wave device with sub-wavelength thick piezoelectric layer Ceased WO2018075682A1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020197014259A KR20190058680A (ko) 2016-10-20 2017-10-18 서브-파장 두께의 압전층을 갖는 탄성파 디바이스
SG11201903365SA SG11201903365SA (en) 2016-10-20 2017-10-18 Elastic wave device with sub-wavelength thick piezoelectric layer
GB1905101.0A GB2569082A (en) 2016-10-20 2017-10-18 Elastic wave device with sub-wavelength thick piezoelectric layer
CN201780064907.6A CN109891612A (zh) 2016-10-20 2017-10-18 具有亚波长厚度的压电层的弹性波器件
DE112017005316.1T DE112017005316B4 (de) 2016-10-20 2017-10-18 Elastikwellenvorrichtung mit einer piezoelektrischen Schicht mit Subwellenlängendicke

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201662410804P 2016-10-20 2016-10-20
US62/410,804 2016-10-20
US201662423705P 2016-11-17 2016-11-17
US62/423,705 2016-11-17

Publications (1)

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WO2018075682A1 true WO2018075682A1 (en) 2018-04-26

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US (4) US10778181B2 (enExample)
JP (1) JP2018074575A (enExample)
KR (1) KR20190058680A (enExample)
CN (1) CN109891612A (enExample)
DE (1) DE112017005316B4 (enExample)
GB (2) GB2600838A (enExample)
SG (1) SG11201903365SA (enExample)
TW (1) TWI752102B (enExample)
WO (1) WO2018075682A1 (enExample)

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CN110113025A (zh) * 2019-04-28 2019-08-09 清华大学 一种便于射频前端集成的温度补偿声表面波器件及其制备方法与应用
GB2576084A (en) * 2018-06-11 2020-02-05 Skyworks Solutions Inc Acoustic wave device with spinel layer
CN111988013A (zh) * 2020-08-31 2020-11-24 诺思(天津)微系统有限责任公司 温补滤波器优化方法和温补滤波器、多工器、通信设备
WO2022043054A1 (en) * 2020-08-27 2022-03-03 RF360 Europe GmbH Thin-film surface-acoustic-wave filter using lithium niobate
CN114665006A (zh) * 2022-03-21 2022-06-24 中北大学 一种d15模式铁电单晶薄膜压电振动传感器及其制备方法

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DE112016001482B4 (de) * 2015-04-01 2025-05-22 Murata Manufacturing Co., Ltd. Duplexer
GB2600838A (en) 2016-10-20 2022-05-11 Skyworks Solutions Inc Elastic wave device with sub-wavelength thick piezoelectric layer
WO2018116602A1 (ja) * 2016-12-20 2018-06-28 株式会社村田製作所 弾性波装置、高周波フロントエンド回路及び通信装置
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JP7042796B2 (ja) * 2017-03-09 2022-03-28 株式会社村田製作所 弾性波装置、弾性波装置パッケージ及びマルチプレクサ
WO2018198952A1 (ja) * 2017-04-24 2018-11-01 株式会社村田製作所 フィルタ装置およびその製造方法
US11070193B2 (en) * 2017-11-24 2021-07-20 Murata Manufacturing Co., Ltd. Elastic wave device, radio-frequency front-end circuit, and communication device
JP7068835B2 (ja) 2018-01-26 2022-05-17 太陽誘電株式会社 弾性波デバイス、フィルタおよびマルチプレクサ
WO2019172032A1 (ja) * 2018-03-08 2019-09-12 株式会社村田製作所 マルチプレクサ、高周波フロントエンド回路および通信装置
CN108418566A (zh) * 2018-03-16 2018-08-17 无锡市好达电子有限公司 一种声表面波滤波器
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CN110138356B (zh) * 2019-06-28 2020-11-06 中国科学院上海微系统与信息技术研究所 一种高频声表面波谐振器及其制备方法
DE102019119239A1 (de) 2019-07-16 2021-01-21 RF360 Europe GmbH Multiplexer
KR102892998B1 (ko) * 2019-09-27 2025-11-28 가부시키가이샤 무라타 세이사쿠쇼 탄성파 장치
WO2021060523A1 (ja) * 2019-09-27 2021-04-01 株式会社村田製作所 弾性波装置及びフィルタ装置
CN114467255A (zh) * 2019-09-27 2022-05-10 株式会社村田制作所 弹性波装置
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CN110708035B (zh) * 2019-10-21 2022-04-01 中国电子科技集团公司第二十六研究所 温度补偿型声表面波器件的温补层上表层表面波抑制方法
JP7433873B2 (ja) 2019-12-06 2024-02-20 太陽誘電株式会社 弾性波共振器、フィルタ、及びマルチプレクサ
CN115349225A (zh) * 2020-03-30 2022-11-15 株式会社村田制作所 弹性波装置
CN112054777B (zh) * 2020-05-09 2024-11-15 诺思(天津)微系统有限责任公司 体声波谐振器组件及制造方法、滤波器及电子设备
WO2022019170A1 (ja) * 2020-07-22 2022-01-27 株式会社村田製作所 弾性波装置
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CN112217490B (zh) * 2020-10-22 2021-09-14 展讯通信（上海）有限公司 层状温补型声表面波谐振器与封装方法
CN112287584A (zh) * 2020-10-30 2021-01-29 西北工业大学 一种超薄平板波导设备及其设计方法
CN112600529A (zh) * 2020-12-18 2021-04-02 广东广纳芯科技有限公司 一种具有poi结构的兰姆波谐振器
US12255633B2 (en) * 2021-04-16 2025-03-18 Murata Manufacturing Co., Ltd. Filter using transversely-excited film bulk acoustic resonators
CN113114159B (zh) * 2021-05-27 2021-12-10 北京超材信息科技有限公司 声表面波装置
US12341487B2 (en) 2021-06-15 2025-06-24 Skyworks Solutions, Inc. Multilayer piezoelectric substrate for acoustic wave device
US20230099440A1 (en) 2021-09-28 2023-03-30 Skyworks Global Pte. Ltd. Piezoelectric mems device with thermal compensation from different material properties
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US20230179171A1 (en) 2021-12-06 2023-06-08 Skyworks Solutions, Inc. Multi-band surface acoustic wave filters
CN114531129A (zh) * 2022-02-22 2022-05-24 重庆邮电大学 一种双模声耦合表面波滤波器
WO2023248636A1 (ja) * 2022-06-24 2023-12-28 株式会社村田製作所 弾性波装置
CN116094481B (zh) * 2023-04-12 2023-07-28 常州承芯半导体有限公司 弹性波装置、滤波装置和多工装置
CN116633307B (zh) * 2023-05-23 2024-09-10 无锡市好达电子股份有限公司 弹性波装置
CN117013984B (zh) * 2023-08-21 2024-05-28 天通瑞宏科技有限公司 一种键合晶圆及薄膜声表面波器件
WO2025211191A1 (ja) * 2024-04-05 2025-10-09 株式会社村田製作所 弾性波装置および弾性波フィルタ
CN119298870B (zh) * 2024-12-09 2025-05-06 中国科学技术大学 一种声波谐振器及滤波器

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US10778181B2 (en) 2020-09-15
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